WO2014191257A1 - Élément optique inorganique et procédé de fabrication d'un élément optique inorganique - Google Patents

Élément optique inorganique et procédé de fabrication d'un élément optique inorganique Download PDF

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Publication number
WO2014191257A1
WO2014191257A1 PCT/EP2014/060340 EP2014060340W WO2014191257A1 WO 2014191257 A1 WO2014191257 A1 WO 2014191257A1 EP 2014060340 W EP2014060340 W EP 2014060340W WO 2014191257 A1 WO2014191257 A1 WO 2014191257A1
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WIPO (PCT)
Prior art keywords
optical element
layer
conversion layer
phosphor
substrate
Prior art date
Application number
PCT/EP2014/060340
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German (de)
English (en)
Inventor
Mikael Ahlstedt
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014191257A1 publication Critical patent/WO2014191257A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • An inorganic optical element is described for example in the publication DE 10 2011 010 118.
  • Object of the present invention is to provide an improved inorganic optical element with
  • An inorganic optical element comprises a substrate.
  • the substrate is designed to be wavelength-converting.
  • wavelength-converting in the present case means, in particular, that irradiated
  • Wavelength range is converted into electromagnetic radiation of another, preferably longer wavelength, wavelength range. Usually one absorbs
  • Radiation of a radiated wavelength range this converts by electronic processes at the atomic and / or molecular level in electromagnetic radiation of another wavelength range and transmits the converted electromagnetic radiation again.
  • wavelength conversion will pure absorption or pure scattering is not referred to herein as wavelength conversion.
  • the radiation of the other, preferably longer wavelength, wavelength range can be
  • the other wavelength range may lie in the green and / or red region of the electromagnetic spectrum, while the
  • Wavelength range of the irradiated radiation in the blue region of the electromagnetic spectrum can be.
  • the substrate may also be designed to be translucent.
  • translucent is meant in particular that the substrate has a particularly high
  • a translucent substrate has a transmission coefficient greater than or equal to 0.9
  • Transmission coefficient of the translucent substrate greater than or equal to 0.95. This is particularly preferred
  • the substrate may have a main plane of extension in which it extends in lateral directions. Perpendicular to the main plane of extension, in the vertical direction, the substrate may have a thickness. The thickness of the substrate may be small against the maximum extent of the substrate in a lateral direction.
  • the inorganic optical element comprises a conversion layer which is arranged on the substrate and has a lateral structure. The conversion layer is also formed wavelength converting.
  • the lateral structure may preferably have a greater extent than natural unevennesses occurring in the material of the conversion layer. Naturally occurring bumps can be characterized in particular by their irregularity. in the
  • the lateral structure may be a regular, for example, periodically repeating structure. Accordingly, structural elements of the lateral structures can be repeated periodically and / or a regular shape
  • the inorganic optical element may include a reflection layer
  • the conversion layer and / or the reflection layer are preferably of inorganic design.
  • the reflection layer also has a lateral structure.
  • Reflection layer is reflective.
  • the reflective layer can have a
  • Reflection coefficients of at least 0.9, preferably of at least 0.95 are particularly preferred.
  • the conversion layer is reflective in addition to its wavelength-converting properties, for example by having an additional reflective material.
  • the substrate is formed from an inorganic material. The substrate may be
  • the substrate wavelength converting formed it may be, for example, a YAG: Ce ceramic in the substrate.
  • the substrate has a first major surface and a second major surface opposite the first major surface.
  • both main surfaces are planar and parallel to each other.
  • at least one of the main surfaces of the substrate is curved.
  • the lateral structure has at least one line or at least one lens as a structural element.
  • the line can in this case be designed, for example, as a ring, as a spiral or as a straight line.
  • the lateral structure is formed of a plurality of concentrically arranged rings. The rings are particularly preferred here
  • the rings are oval or elliptical.
  • the numerical eccentricity of the ellipse may be at least 0.9.
  • the spiral is
  • the lateral structure can also have a plurality of straight lines as structural elements.
  • the lateral structure may consist of a plurality of straight lines as structural elements.
  • the straight lines can be arranged, for example, as a grid. The grid has this rule
  • the stitches can be enclosed by the straight line.
  • the mesh size is preferably between 1 ymym and 200 ymym inclusive.
  • a lateral distance of the straight line may be at least 1 ym and at most 200 ym.
  • the straight lines are arranged parallel to one another at a distance.
  • the distance between the straight lines may be the lateral distance in the present case.
  • the lateral structure can be made, for example
  • Structure elements exist, which are formed as a straight line and are arranged parallel to each other at a distance.
  • the distance between the straight lines is preferably between 1 ⁇ m and 200 ⁇ m inclusive.
  • the distance between the straight lines may in each case be the same or vary over the substrate.
  • the lateral structure as structural elements can have a multiplicity of lenses, preferably microlenses.
  • the plurality of microlenses is particularly preferably arranged in the form of a matrix, that is to say in columns and rows.
  • the lateral structure has a lens as a single structural element which extends over the entire substrate.
  • Microlenses may be present in particular
  • the lens In the case of a single lens, it is possible for the lens to have a
  • Focal length whose amount is at least 3 m, preferably at least 0.5 m.
  • the lateral structure is particularly preferred
  • Structural elements are covered are preferably free
  • the lateral structure is the Conversion layer or the reflection layer such
  • parts of the substrate are free of the conversion layer or the reflective layer. Said parts may also be free of the conversion layer and the reflection layer.
  • the parts of the substrate that are free of the conversion layer and / or the reflection layer can be freely accessible.
  • the optical element is suitable for incident electromagnetic radiation of a first wavelength range at least partially in
  • the optical element is preferably provided for converting the incident radiation only partially, so that mixed-color radiation is generated with the aid of the optical element, which radiation is composed of unconverted radiation of the first
  • Wavelength range and composed of converted radiation of the second wavelength range
  • the color location of the mixed-color radiation can now be adapted to a desired value by varying the structuring of the conversion layer.
  • Conversion for example, formed as a grid, it can be changed by varying the mesh size of the grid, the color location. If the conversion layer is formed by parallel straight lines, then by variation of the Distance of the straight line of the color space can be changed specifically. Also by varying the thickness of the conversion layer of the color of the obtained mixed-colored radiation can be adjusted.
  • Conversion layer or reflection layer has a
  • the width of a feature is between 1 ym and 200 ym inclusive. If the structural element is a line, for example, the width of the line has a value from the above-mentioned range. The width of the
  • Structural element may also extend over the entire width of the optical element.
  • the thickness of the conversion layer or the reflection layer particularly preferably has a value of between 1 ⁇ m and 100 ⁇ m inclusive.
  • a structural element such as a
  • the width of the structural element may be the extent of the structural element along at least one lateral direction.
  • Structural element can in this case the extension of the
  • the conversion layer is a layer stack with different
  • At least one of the individual layers of the layer stack is formed wavelength-converting. Particularly preferably, a first single layer of the
  • the first phosphor and the second phosphor are
  • the first phosphor is capable of converting incident blue light to yellow-green light
  • the second phosphor is capable of converting incident blue light to red light.
  • the conversion layer can have a multiplicity of different individual layers with different wavelength-converting properties. Furthermore, it is also possible for the conversion layer to be different from one another laterally arranged regions
  • the conversion layer may comprise first regions and second regions, wherein the first regions comprise the first phosphor and the second regions comprise the second phosphor. Preference is given here to the first
  • a conversion layer with different wavelength-converting regions which are arranged laterally side by side, advantageously has an increased efficiency compared to stacked individual layers with different as a rule
  • the conversion layer comprises a mixture of a first phosphor and a second phosphor, wherein the first phosphor is different from the second phosphor.
  • Phosphors are not different from each other
  • the conversion layer has a third or a fourth
  • rare earth doped garnets rare earth doped alkaline earth sulfides, rare earth doped thiogallates, rare earth doped aluminates, rare earth doped silicates, rare earth doped orthosilicates, rare earth doped chlorosilicates rare earth doped nitrides, rare earth doped alkaline earth silicon nitrides, rare earth minerals
  • doped oxynitrides doped with rare earths
  • the first phosphor is a
  • nitride phosphor such as rare earth-doped nitride, rare-earth-doped alkaline-earth silicon nitride, rare-earth-doped oxynitride, rare earth-doped one
  • the second phosphor in this embodiment is preferably an oxidic phosphor, such as a rare earth-doped garnet, a rare-earth doped garnet
  • the substrate has a wavelength-converting design and has a first oxidic phosphor, such as YAG: Ce.
  • a nitridic conversion layer is arranged on this substrate.
  • the conversion layer or the reflection layer are formed as ceramics. It is also possible that the conversion layer and the
  • Reflection layer are formed as a ceramic.
  • the conversion layer has a glass matrix into which particles of at least one phosphor are introduced.
  • Reflection layer have a glass matrix, in the
  • the glass matrix has the advantage of being the one introduced
  • the glass matrix is a low-melting glass.
  • low-melting glass advantageously comparatively low temperatures can be used, which in particular a
  • Damage to the introduced materials, such as reflective or wavelength-converting particles avoids.
  • Reflective layer to confer reflective properties titanium oxide, alumina, silica, zinc oxide,
  • the inorganic optical element is formed of inorganic materials and free of organic materials.
  • An inorganic optical element particularly advantageously has improved heat dissipation during operation.
  • the inorganic optical element described here is particularly suitable in an optoelectronic
  • Component to be used as a light emitting diode Component to be used as a light emitting diode.
  • an optical element with a first optical element For example, an optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with a first optical element with
  • wavelength-converting properties are introduced into the beam path of a radiation-emitting semiconductor body and at least partially convert its radiation into radiation of a different wavelength during operation of the semiconductor body.
  • An inorganic optical element described herein may be preferred be prepared with a method described here. That is, all features disclosed for the methods are also disclosed for the inorganic optical element and vice versa.
  • Both methods provide a translucent or a wavelength-converting substrate.
  • the conversion layer or the reflection layer on the substrate then with a
  • the conversion layer or the
  • Reflection layer in this case with a lateral structure, as described above, deposited.
  • Structural elements for example, with dimensions up to 50 ym, are generated by these methods.
  • a layer deposited with a laser-assisted method can be distinguished, in particular, by the fact that the layer has fewer impurities due to foreign atoms and / or molecules than an otherwise identical layer which is not deposited and / or produced by means of a laser-assisted method. Furthermore, one with a
  • Powder mixture provided which contains the starting materials of the applied layer as a particle.
  • Powder mixture is usually formed from inorganic particles.
  • the powder mixture is introduced into a laser beam which is directed onto the surface to be coated.
  • the fact that the powder mixture is introduced into the laser beam can here and below mean that a
  • Powder jet which provides the powder mixture, at least on a region to be coated to
  • the coating surface overlaps with the laser beam.
  • the laser beam heats up the particles of the powder mixture, which generally melts the particles completely or partially and
  • a full-ceramic layer can be formed using a micro-laser cladding method.
  • a fully ceramic layer may in this case be a layer which is at least 90%, preferably at least 95% and particularly preferably at least 99%, formed with a ceramic material or consists of such.
  • Starting materials of the applied layer as particles contains applied to the surface to be coated.
  • the powder mixture is usually formed in turn from inorganic particles.
  • the application of the powder mixture to the surface to be coated is usually carried out
  • the entire surface The areas of the surface to be coated which are to be provided with the layer are then treated with a laser.
  • the particles usually melt again in whole or in part, resulting in an inorganic layer of the powder mixture on the
  • the inorganic layer can turn
  • micro-laser sintering method or a micro-laser cladding method it is also possible in a micro-laser sintering method or a micro-laser cladding method to use a powder mixture, in addition to the
  • Phosphorus particles and / or the reflective particles also contains glass particles.
  • the glass particles preferably melt and form from the
  • Powder mixture a conversion layer or a
  • Reflection layer in that the glass particles melt and form a glass matrix in which the phosphor particles and / or the reflective particles are embedded.
  • Reflection layer heated. In this way, thermal gradients between the layer to be deposited and the substrate during deposition can be reduced. This improves the adhesion between the layer to be applied and the substrate and reduces cracking in the applied layer.
  • the powder mixture contains particles of the phosphor, which is the
  • the powder mixture contains the reflective particles, which gives the reflective layer, the reflective properties.
  • a powder mixture can be used with particles of at least one phosphor, which are coated with a glass.
  • a micro-laser cladding method or a micro-laser sintering method the
  • Glass coating of the particles then at least partially melted and the particles together to form a continuous layer connected.
  • layers produced in this way can have pores.
  • the glass is a low one
  • the glass may for example comprise one of the following materials or consist of one of the following materials: PbO-ZnO-B203-SiO 2, PbO-ZnO-B 2 O 3
  • Glass transition temperature usually between 575 ° C and 730 ° C, depending on the lead content
  • Na20-PbO-B203-SiO2 glass transition temperature usually between
  • inorganic optical element is in turn a
  • the green sheet is applied to the substrate.
  • the green sheet may be flexible and have a thickness of at least 50 ym and at most 1 mm, preferably at most 500 ym.
  • the green sheet contains either reflective particles and / or particles of at least one phosphor. Furthermore, the green sheet may also contain glass particles, which later form a glass matrix for the phosphor particles and / or the reflective particles. This green sheet serves as a starting material for a conversion layer or a
  • the green film serves as the starting material for a conversion layer, then it contains particles of the phosphor which contain the conversion layer
  • the green film serves as a starting material for a reflection layer, it contains reflective particles which are the basis of the
  • the green sheet is patterned after application to the substrate with a laser beam, wherein structural elements of the green sheet are sintered into a ceramic. In general, the parts of the green sheet, which are not patterned with the laser beam and sintered, then from the
  • Element can also be used in conjunction with one of the methods and vice versa.
  • FIGS. 13 to 17 show schematic representations
  • inorganic optical elements according to one embodiment.
  • an inorganic substrate 1 is provided in a first step (FIG. 1).
  • the substrate 1 may, for example, be a transparent substrate 1, such as a glass substrate, or a wavelength-converting substrate 1, such as a YAG: Ce ceramic
  • the laser-assisted method in the present case is a micro-laser cladding method.
  • a powder mixture 3 is provided, which is introduced into a laser beam 4 (FIG. 2).
  • the powder mixture 3 has particles of a first phosphor.
  • a structural element 5 of a structured single layer is formed on the substrate 1, which consists of the
  • Particles of the powder mixture 3 is formed.
  • the first single layer 21 of the conversion layer 2 comprises the first phosphor, which in the present case is suitable for converting incident blue light into yellow-green light.
  • the first phosphor is, for example, an oxidic phosphor, such as YAG: Ce.
  • a second powder mixture 3 ' is used as the starting material for a further single layer 22 of the conversion layer 2.
  • the second powder mixture comprises particles of a second phosphor which is different from the first phosphor.
  • the second phosphor is, for example, nitridic and suitable for at least partially converting incident blue light into red light. For example, it is the second Phosphorus around (Sr, Ca) 2Si5Ng: Eu.
  • the second powder mixture 3 'is in turn introduced into the laser beam 4 and a further single layer 22 is deposited on the first single layer 21 by means of the micro laser cladding method (FIG. 4).
  • FIG. 5 schematically shows the finished inorganic optical element.
  • Substrates 1 a conversion layer 2 is applied, consisting of two different wavelength-converting
  • Wavelength-converting single layer 21 is suitable here for partially converting incident blue light into yellow light.
  • a second wavelength-converting single layer 22 is applied, which has a second phosphor which is nitridic
  • the nitridic phosphor is to
  • Such an optical element is
  • the conversion layer 2 of the optical element has a lateral structure with a structural element 5, which is formed as a line. Depending on the size of the line can be achieved with the optical element color of the
  • a substrate 1 is again provided (not shown).
  • a powder mixture 3 is applied over its entire surface as the starting material.
  • Powder mixture has reflective particles 6, which are coated with a glass coating 7 ( Figure 6).
  • a structured reflection layer 8 is produced on the substrate 1 using a micro-laser sintering method.
  • the powder mixture 3 in a predetermined range with a laser beam 4th
  • the glass coating 7 of the reflective particles 6 at least partially melts due to the irradiation with the laser beam 4 and connects the individual reflective particles 6 to a continuous one
  • the green sheet 9 has, for example, particles of a phosphor which imparts wavelength-converting character to the green sheet 9 and the ceramic layer to be formed therefrom. Furthermore, it is possible that the green sheet 9 additionally or alternatively to the phosphor particles comprises reflective particles 6, which gives the green sheet 9 and the ceramic layer to be formed from it reflective properties.
  • the green sheet 9 is processed with a laser beam 4, so that the processed areas are sintered into a ceramic ( Figure 11).
  • the non-irradiated with the laser beam 4 areas of the green sheet 9 are removed again from the substrate 1 and there is a structured layer, for example, as
  • Conversion layer 2 or as a reflection layer 8 is formed on a main surface of the substrate 1 ( Figure 12).
  • Figure 13 shows a schematic plan view of a
  • the inorganic optical element according to FIG. 13 has a substrate 1 onto which a
  • Conversion layer 2 is applied with a lateral structure.
  • the lateral structure is linear
  • Structural element 5 is formed here as a straight line.
  • the straight lines are arranged parallel to each other at equal intervals on the substrate 1.
  • the regions of the substrate 1 between the line-shaped structural elements 5 are freely accessible.
  • Figure 14 shows a schematic perspective view of an optical element according to another
  • the conversion layer 2 has a lateral structure in the form of a grid on the substrate 1.
  • FIG. 15 also shows a schematic perspective view of an optical element according to FIG. 15
  • the optical element has a conversion layer 2 with a lateral structure whose structural elements 5 are designed as microlenses.
  • the microlenses 5 are arranged on the substrate 1 in the form of a matrix, that is to say along rows and columns.
  • FIG. 16 shows a schematic plan view of an optical element according to a further exemplary embodiment.
  • the optical element has a conversion layer 2 or a reflection layer 8, the lateral structure of which consists of concentrically arranged, circular rings
  • Structural elements 5 is formed.
  • the conversion element according to the exemplary embodiment of FIG. 17 has a conversion layer 2 with first regions 10 and second regions 11 which are different in terms of their wavelength-converting properties.
  • the first regions 10 comprise a phosphor capable of converting incident blue light to red light.
  • the first phosphor is a nitride phosphor.
  • the second regions 11 comprise a second phosphor capable of converting incident blue light to yellow light.
  • the second phosphor is particularly preferably an oxidic phosphor.
  • the first regions 10 are present rectangular, more preferably square.
  • the second regions 11 are presently rectangular and particularly preferably square.
  • the first regions 10 and the second regions 11 are arranged in rows and columns. In one line, the first regions 10 and the second regions 11 are each arranged laterally alternately next to one another. Also in a column, the first regions 10 and the second regions 11 are each arranged laterally alternately side by side. In other words, the first regions 10 and the second regions 11 of the conversion layer 2 are according to FIG. 17

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Abstract

Élément optique inorganique comportant un substrat (1) transparent ou de conversion de longueurs d'onde, sur lequel se trouve une couche de conversion (2) ou une couche de réflexion (8), la couche de conversion (2) ou la couche de réflexion (8) présentant une structure latérale. L'invention concerne également deux procédés permettant de fabriquer un élément de ce type.
PCT/EP2014/060340 2013-05-29 2014-05-20 Élément optique inorganique et procédé de fabrication d'un élément optique inorganique WO2014191257A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013105533.8A DE102013105533A1 (de) 2013-05-29 2013-05-29 Anorganisches optisches Element und Verfahren zur Herstellung eines anorganischen optischen Elements
DE102013105533.8 2013-05-29

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WO2014191257A1 true WO2014191257A1 (fr) 2014-12-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019174227A1 (fr) * 2018-03-12 2019-09-19 深圳光峰科技股份有限公司 Dispositif de conversion de longueur d'onde pixelisé, élément de conversion de longueur d'onde pixelisé et son procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016212078A1 (de) * 2016-07-04 2018-01-04 Osram Gmbh Beleuchtungseinrichtung
US20230043329A1 (en) * 2020-01-14 2023-02-09 Lg Electronics Inc. Lighting apparatus and method for manufacturing same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296062A (en) * 1986-10-17 1994-03-22 The Board Of Regents, The University Of Texas System Multiple material systems for selective beam sintering
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US20040178417A1 (en) * 2003-03-10 2004-09-16 Andrews Peter S. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
JP2005038681A (ja) * 2003-07-18 2005-02-10 Toyota Industries Corp ボトムエミッション型発光素子形成用の透明基板及び当該透明基板を用いた発光デバイス
DE102009051748A1 (de) * 2009-11-03 2011-05-05 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Herstellung eines strahlungsemittierenden Halbleiterbauelements und strahlungsemittierendes Halbleiterbauelement
EP2361751A1 (fr) * 2010-02-23 2011-08-31 EOS GmbH Electro Optical Systems Procédé et dispositif de fabrication d'un objet tridimensionnel, notamment approprié à l'utilisation dans la microtechnique
DE102011010118A1 (de) 2011-02-02 2012-08-02 Osram Opto Semiconductors Gmbh Keramisches Konversionselement, Halbleiterchip mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497747B (zh) * 2008-06-02 2015-08-21 Panasonic Corp 半導體發光裝置及使用該發光裝置之光源裝置
US20120138874A1 (en) * 2010-12-02 2012-06-07 Intematix Corporation Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296062A (en) * 1986-10-17 1994-03-22 The Board Of Regents, The University Of Texas System Multiple material systems for selective beam sintering
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US20040178417A1 (en) * 2003-03-10 2004-09-16 Andrews Peter S. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
JP2005038681A (ja) * 2003-07-18 2005-02-10 Toyota Industries Corp ボトムエミッション型発光素子形成用の透明基板及び当該透明基板を用いた発光デバイス
DE102009051748A1 (de) * 2009-11-03 2011-05-05 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Herstellung eines strahlungsemittierenden Halbleiterbauelements und strahlungsemittierendes Halbleiterbauelement
EP2361751A1 (fr) * 2010-02-23 2011-08-31 EOS GmbH Electro Optical Systems Procédé et dispositif de fabrication d'un objet tridimensionnel, notamment approprié à l'utilisation dans la microtechnique
DE102011010118A1 (de) 2011-02-02 2012-08-02 Osram Opto Semiconductors Gmbh Keramisches Konversionselement, Halbleiterchip mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
X. ZENG ET AL: "Direct Fabrication of Electric Components on Insulated Boards by Laser Microcladding Electronic Pastes", IEEE TRANSACTIONS ON ADVANCED PACKAGING, vol. 29, no. 2, 1 May 2006 (2006-05-01), pages 291 - 294, XP055140361, ISSN: 1521-3323, DOI: 10.1109/TADVP.2005.853546 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019174227A1 (fr) * 2018-03-12 2019-09-19 深圳光峰科技股份有限公司 Dispositif de conversion de longueur d'onde pixelisé, élément de conversion de longueur d'onde pixelisé et son procédé de fabrication

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