WO2013038304A1 - Revêtement réflecteur destiné à un support de dispositif électroluminescent - Google Patents

Revêtement réflecteur destiné à un support de dispositif électroluminescent Download PDF

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Publication number
WO2013038304A1
WO2013038304A1 PCT/IB2012/054598 IB2012054598W WO2013038304A1 WO 2013038304 A1 WO2013038304 A1 WO 2013038304A1 IB 2012054598 W IB2012054598 W IB 2012054598W WO 2013038304 A1 WO2013038304 A1 WO 2013038304A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
mount
emitting device
lens
disposed
Prior art date
Application number
PCT/IB2012/054598
Other languages
English (en)
Inventor
Frederic Stephane Diana
Brendan Jude Moran
Jeffrey Dellert Kmetec
Stefan Eberle
Mira Misra
Kuochou Tai
Werner Karl Goetz
Mikhail FOUKSMAN
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2013038304A1 publication Critical patent/WO2013038304A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention relates to a reflective coating for a mount on which a light emitting device is mounted.
  • LEDs light emitting diodes
  • RCLEDs resonant cavity light emitting diodes
  • VCSELs surface- emitting lasers
  • edge emitting lasers are among the most efficient light sources currently available.
  • Materials systems currently of interest in the manufacture of high-brightness light emitting devices capable of operation across the visible spectrum include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, also referred to as Ill-nitride materials.
  • Ill-nitride light emitting devices are fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a sapphire, silicon carbide, Ill-nitride, or other suitable substrate by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial techniques.
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the stack often includes one or more n-type layers doped with, for example, Si, formed over the substrate, one or more light emitting layers in an active region formed over the n-type layer or layers, and one or more p-type layers doped with, for example, Mg, formed over the active region. Electrical contacts are formed on the n- and p- type regions.
  • Fig. 1 illustrates three LEDs mounted on a submount, described in more detail in US 2011/0012149.
  • conventional LEDs 10A, 10B, and IOC are formed on a growth substrate, then singulated and mounted on a submount wafer 22.
  • a reflective underfill material is prepared. For example, particles of Ti0 2 (appearing white under white light), or other reflective particles such as Zr0 2 , are added to a silicone molding compound that is suitable for underfilling.
  • An underfill and reflective layer 54 for each LED is then formed, for example by injection molding. The mold is cooled to solidify the underfill material.
  • the mold is then removed from the wafer 22, leaving hardened underfill material 54 encapsulating each LED and on the wafer 22 surface between each LED. Excess underfill material 54 over the growth substrate of each LED is removed, for example by blasting the entire surface of the wafer 22 with high-velocity microbeads, then the growth substrate for each LED is removed. Phosphor layers 62A, 62B, and 62C may be molded over each LED, resulting in the structures illustrated in Fig. 1. The submount wafer 22 is then singulated to form individual LEDs/submounts.
  • a structure according to embodiments of the invention includes a light emitting device attached to a secondary mount.
  • the light emitting device includes a Ill-nitride light emitting diode disposed on a primary mount.
  • a reflective material is disposed on the secondary mount in an area adjacent to the light emitting device.
  • Embodiments of the invention may improve the light output from a light emitting device disposed on a primary and secondary mount, by reducing the amount of light lost to low reflectivity surfaces on the secondary mount.
  • Fig. 1 illustrates three LEDs mounted on a prior art submount wafer with a reflective layer disposed between the LEDs.
  • Fig. 2 illustrates a structure including a semiconductor LED disposed on a primary mount.
  • Fig. 3 illustrates three devices, each including a semiconductor LED disposed on a primary mount, disposed on a secondary mount.
  • Fig. 4 illustrates the structure of Fig. 3 after forming a reflective coating.
  • Fig. 5 illustrates the structure of Fig. 4 after removing excess reflective material from the tops of the light emitting devices and the sides of the secondary mount.
  • Fig. 6 illustrates the structure of Fig. 5 after forming lenses over each light emitting device.
  • Fig. 7 illustrates a secondary mount with three light emitting devices and a single lens.
  • Fig. 8 illustrates a light emitting device disposed to a secondary mount with a frame.
  • areas between light emitting devices on a secondary mount are made reflective to reduce light loss.
  • the semiconductor light emitting devices are Ill-nitride LEDs that emit blue or UV light
  • semiconductor light emitting devices besides LEDs such as laser diodes and semiconductor light emitting devices made from other materials systems such as other III-V materials, Ill-phosphide, Ill-arsenide, II- VI materials, ZnO, or Si-based materials may be used.
  • FIG. 2 illustrates a device 15 including semiconductor light emitting device 10 such as an LED disposed on a primary mount 12.
  • semiconductor light emitting device 10 such as an LED disposed on a primary mount 12.
  • the semiconductor structure is grown on a growth substrate.
  • the growth substrate may be any suitable substrate such as, for example, sapphire, SiC, Si, GaN, or composite substrates.
  • the semiconductor structure includes a light emitting or active region sandwiched between n- and p- type regions.
  • An n-type region may be grown first and may include multiple layers of different compositions and dopant concentration including, for example, preparation layers such as buffer layers or nucleation layers, and/or layers designed to facilitate removal of the growth substrate, which may be n-type or not intentionally doped, and n- or even p-type device layers designed for particular optical, material, or electrical properties desirable for the light emitting region to efficiently emit light.
  • a light emitting or active region is grown over the n-type region.
  • suitable light emitting regions include a single thick or thin light emitting layer, or a multiple quantum well light emitting region including multiple thin or thick light emitting layers separated by barrier layers.
  • a p-type region may then be grown over the light emitting region.
  • the p-type region may include multiple layers of different composition, thickness, and dopant concentration, including layers that are not intentionally doped, or n-type layers.
  • the total thickness of all the semiconductor material in the device is less than 10 ⁇ in some embodiments and less than 6 ⁇ in some embodiments.
  • the semiconductor material may optionally be annealed at between 200 °C and 800 °C after growth.
  • a flip chip device may be formed by patterning the semiconductor structure by standard photolithographic operations and etching to remove a portion of the entire thickness of the p-type region and the entire thickness of the light emitting region, to reveal a surface of the n-type region on which a metal n-contact is formed.
  • the p- and n-contacts may be redistributed by a stack of insulating layers and metals.
  • Metal bonding layers may be formed on the n- and p-contacts.
  • the LED 10 is then attached to primary mount 12, for example by soldering, thermosonic bonding with, for example, gold interconnects, or any other suitable bonding technique.
  • the bonding layers or an additional underfill layer may support the semiconductor structure during removal of all or part of the growth substrate, or the growth substrate may remain part of the final device.
  • Additional layers such as wavelength converting layers, filter layers, dichroic layers, or optics may be formed over LED 10, after attaching LED 10 to primary mount 12, or over multiple LEDs after multiple devices are disposed on a secondary mount, as described below.
  • LED 10 may be attached to primary mount 12 when primary mount 12 is still attached to a wafer of primary mounts.
  • the surface 19 of primary mount 12 between neighboring LEDs may be made reflective, for example as described above in reference to Fig. 1.
  • Primary mount 12 may be a material with high thermal conductivity, such as ceramic or copper. Such materials may be expensive, compared to other submount materials such as, for example, silicon. With expensive materials, primary mount 12 may be made as small as possible.
  • Multiple devices 15 may be packaged on a single secondary mount, for example in a linear or two-dimensional array.
  • device 15 or “light emitting device 15” refers to the structure illustrated in Fig. 2.
  • Fig. 3 illustrates three of the devices 15 illustrated in Fig. 2 attached to a secondary mount 14.
  • Devices 15 may be attached to secondary mount 14 by, for example, soldering.
  • Secondary mount 14 may be, for example, a printed circuit board or a silicon mount.
  • Secondary mount 14 provides mechanical support, heat dissipation, and electrical connection to devices 15. Particularly in cases where the area of primary mount 12 of Fig. 2 is limited, as described above, the regions 16 on secondary mount 14 between devices 15 may be a significant source of light loss.
  • Figs. 4-6 illustrate forming a reflective surface on secondary mount 14, according to embodiments of the invention.
  • a material 18 that is highly reflective, over a range of angles of incidence and/or over a range of wavelengths is disposed over devices 15 and secondary mount 14 such that material 18 fills the spaces 16 between devices 15.
  • Reflective material 18 may be, for example, a Ti0 2 - or V0 2 -based white coating, or white pigments disposed in silicone. Other materials may be added to the mixture to optimize the thermo- mechanical properties of the material.
  • the coating of reflective material 18 is an electrical insulator.
  • the coating of reflective material 18 protects secondary mount 14 from environmental corrosion, heat from devices 15, and blue or UV light from devices 15.
  • the coating may be formed as a barrier to corrosion of metal layers on secondary mount 14.
  • a coating of reflective material 18 may be formed by any suitable technique including jetting, screen-printing, spray-coating, or a photolithography process with evaporation steps.
  • the coating of reflective material 18 is formed thick enough to cover the low reflectivity surfaces of secondary mount 14 between devices 15.
  • excess reflective material is removed, exposing the tops 22 of devices 15, to allow light to escape from devices 15, leaving reflective material 18 between devices 15. Excess reflective material may also be removed from the edges 20 of secondary mount 14, for example to allow electrical connectivity to this surface.
  • the coating of reflective material is a preformed sheet of appropriate size with openings as necessary, or is deposited such that removal of excess reflective material from the tops of devices 15 is not necessary.
  • Fig. 6 illustrates the structure of Fig. 5 after dome lenses 24 are formed over each light emitting device 15.
  • Lenses 24 may be formed and disposed over devices 15 by any suitable technique.
  • lenses 24 are pre-formed lenses that are glued or adhered to devices 15 and/or secondary mount 14, or otherwise disposed over devices 15.
  • lenses 24 may be formed in a low pressure overmolding process, as follows: A mold with indentations corresponding to the positions of the devices 15 on the secondary mount 14 is provided.
  • the indentations are filled with a liquid, optically transparent material, such as silicone, which when cured forms a hardened lens material.
  • the shape of the indentations will be the shape of the lens.
  • lenses 24 may be formed by high pressure injection molding, where the liquid material is injected at high pressure after an empty mold is encased around the object to be encapsulated.
  • a single lens is formed over each light emitting device 15 but multiple lenses over a single device are contemplated and are within the scope of the invention.
  • Fig. 7 illustrates a single lens 26 formed over multiple light emitting devices 15.
  • Lens 26 may be formed with the same techniques described above for lenses 24 of Fig. 6.
  • Devices 15 may be more closely spaced in Fig. 7 as compared to Fig. 6, though they need not be.
  • Both lenses 24 of Fig. 6 and lens 26 of Fig. 7 may be an optical component with a high index of refraction, for example greater than 1.5 in some embodiments and greater than 2 in some embodiments.
  • lenses 24 of Fig. 6 or lens 26 of Fig. 7 may be any suitable shape, such as dome lenses as illustrated, half-dome lenses, or Fresnel lenses.
  • wavelength converting material such as phosphor, scattering structures or materials, or other materials may be disposed within lenses 24 of Fig. 6 or lens 26 of Fig. 7.
  • Wavelength converting materials, optical coatings such as filters, or other materials may be disposed over devices before the application of lenses, or over lenses 24 of Fig. 6 or lens 26 of Fig. 7.
  • no lenses are formed over light emitting devices 15.
  • FIGs. 3, 4, 5, 6, and 7 illustrate multiple devices 15 on a secondary mount 14
  • embodiments of the invention may be applicable to a single device 15, as illustrated in Fig. 8.
  • a single device 15 is disposed on a secondary mount 14.
  • An optional frame 30 may be disposed on secondary mount 14 around device 15, or alternatively an optional reflector cup may be formed in secondary mount 14.
  • the side walls of frame 30 or a reflector cup may be reflective, in some embodiments.
  • a coating of reflective material 18 is disposed around device 15, as described above.
  • a lens 28 may be disposed over device 15, by any of the techniques described above in reference to Fig. 6.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

Un procédé selon des modes de réalisation de la présente invention inclut une étape consistant à disposer, sur un support secondaire (14), une pluralité de dispositifs électroluminescents (15). Chaque dispositif électroluminescent inclut une diode électroluminescente (10) qui est disposée sur un support primaire (12). Un matériau réfléchissant (18) est disposé sur une surface (16) du support secondaire entre les dispositifs électroluminescents. Après le dépôt de la pluralité de dispositifs électroluminescents sur le support secondaire, une lentille (26) est disposée au-dessus d'au moins un des dispositifs électroluminescents (15).
PCT/IB2012/054598 2011-09-14 2012-09-06 Revêtement réflecteur destiné à un support de dispositif électroluminescent WO2013038304A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161534450P 2011-09-14 2011-09-14
US61/534,450 2011-09-14

Publications (1)

Publication Number Publication Date
WO2013038304A1 true WO2013038304A1 (fr) 2013-03-21

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Country Status (2)

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TW (1) TW201323766A (fr)
WO (1) WO2013038304A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014072871A1 (fr) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Dispositif électroluminescent comprenant un filtre et une couche de protection
JP2015220392A (ja) * 2014-05-20 2015-12-07 日亜化学工業株式会社 発光装置の製造方法
JP2016518033A (ja) * 2013-05-15 2016-06-20 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 光学エレメントとリフレクタを用いた発光デバイス
JP2016174148A (ja) * 2015-03-16 2016-09-29 日東電工株式会社 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245946C1 (de) * 2002-09-30 2003-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Lichtquellenmoduls
US20060163601A1 (en) * 2003-02-28 2006-07-27 Volker Harle Lighting module and method the production thereof
US20060232969A1 (en) * 2002-09-30 2006-10-19 Georg Bogner Illumination device for backlighting an image reproduction device
US20070189007A1 (en) * 2004-03-26 2007-08-16 Keiji Nishimoto Led mounting module, led module, manufacturing method of led mounting module, and manufacturing method of led module
EP2160082A1 (fr) * 2007-05-18 2010-03-03 Denki Kagaku Kogyo Kabushiki Kaisha Carte de circuit imprimé à base métallique
US20100315818A1 (en) * 2009-10-07 2010-12-16 Alexander Shaikevitch Reflective surface sub-assembly for a light-emitting device
EP2312659A2 (fr) * 2009-10-15 2011-04-20 LG Innotek Co., Ltd. Appareil électroluminescent

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245946C1 (de) * 2002-09-30 2003-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Lichtquellenmoduls
US20060232969A1 (en) * 2002-09-30 2006-10-19 Georg Bogner Illumination device for backlighting an image reproduction device
US20060163601A1 (en) * 2003-02-28 2006-07-27 Volker Harle Lighting module and method the production thereof
US20070189007A1 (en) * 2004-03-26 2007-08-16 Keiji Nishimoto Led mounting module, led module, manufacturing method of led mounting module, and manufacturing method of led module
EP2160082A1 (fr) * 2007-05-18 2010-03-03 Denki Kagaku Kogyo Kabushiki Kaisha Carte de circuit imprimé à base métallique
US20100315818A1 (en) * 2009-10-07 2010-12-16 Alexander Shaikevitch Reflective surface sub-assembly for a light-emitting device
EP2312659A2 (fr) * 2009-10-15 2011-04-20 LG Innotek Co., Ltd. Appareil électroluminescent

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014072871A1 (fr) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Dispositif électroluminescent comprenant un filtre et une couche de protection
JP2015535144A (ja) * 2012-11-07 2015-12-07 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． フィルタ及び保護層を含む発光デバイス
US9543478B2 (en) 2012-11-07 2017-01-10 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
US9935244B2 (en) 2012-11-07 2018-04-03 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
JP2016518033A (ja) * 2013-05-15 2016-06-20 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 光学エレメントとリフレクタを用いた発光デバイス
JP2015220392A (ja) * 2014-05-20 2015-12-07 日亜化学工業株式会社 発光装置の製造方法
JP2016174148A (ja) * 2015-03-16 2016-09-29 日東電工株式会社 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法

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