WO2013032304A2

WO2013032304A2 - Organic electronic device and method for manufacturing same

Info

Publication number: WO2013032304A2
Application number: PCT/KR2012/007030
Authority: WO
Inventors: 권오관; 정준호; 최정옥; 이상희; 김형선
Original assignee: 주식회사 엘엠에스
Priority date: 2011-09-02
Filing date: 2012-09-01
Publication date: 2013-03-07
Also published as: KR101320449B1; KR20130025799A; WO2013032304A3; KR101290185B1; KR20130025854A

Abstract

The present invention relates to an organic electronic device, and to a method for manufacturing same, the device comprising: a first electrode; a second electrode; one or more organic layers which are formed between the first electrode and the second electrode, and which include a light-emitting layer; a doping layer including a hole transporting compound and a p-type dopant; and a non-doping layer including the hole transporting compound, wherein the doping layer and the non-doping layer are repeatedly formed between the first electrode and the light-emitting layer. Injection of holes into the device is easy, enabling improved luminous efficacy.

Description

Organic electronic device and its manufacturing method

The present invention relates to an organic electronic device and a method of manufacturing the organic electronic device, the organic electronic device includes a novel laminated structure formed between the first electrode and the light emitting layer.

The organic electronic device refers to a self-luminous device using an electroluminescence phenomenon that emits light when a current flows through a light emitting organic compound. The organic electronic device has an advantage of excellent thermal stability and low driving voltage, and may be utilized in various industrial fields.

However, since the organic electronic device has an unstable interface between the electrode and the organic layer, heat applied to the device or heat generated from the inside may adversely affect the device performance. In addition, in the process of supplying holes from the electrode to the light emitting layer, the driving voltage of the device may increase due to an energy barrier present at the interface of each laminate. Therefore, it is important not only to stabilize the interface of each layer of the laminate, but also to easily inject holes by minimizing the energy barrier in the process of injecting holes from the electrode to the light emitting layer.

An object of the present invention is to provide an organic electronic device comprising a novel structure capable of improving the injection and transport of holes in the device and a method of manufacturing the same.

An organic electronic device according to an embodiment of the present invention, the first electrode; Second electrode; And at least one organic layer formed between the first electrode and the second electrode and including an emission layer, wherein the doping layer comprises a hole transporting compound and a P-type dopant between the first electrode and the emission layer; And it provides a structure in which the undoped layer comprising the hole transport compound is repeated.

In still another embodiment of the present invention, there is provided a method for forming a doping layer including a hole transporting compound and a P-type dopant on a first electrode; And forming a non-doped layer including the hole transporting compound on the formed doped layer.

The organic electronic device according to the present invention improves the injection and transport of holes in the device structure, proposes a novel laminated structure capable of improving power efficiency and device life, and can be effectively applied to various kinds of devices.

1 to 7 are schematic diagrams each showing a laminated structure of an organic electronic device according to an embodiment of the present invention;

8 is a schematic diagram showing a manufacturing process of an organic electronic device according to an embodiment of the present invention.

An organic electronic device according to an embodiment of the present invention,

A first electrode; Second electrode; And at least one organic layer formed between the first electrode and the second electrode and including a light emitting layer, between the first electrode and the light emitting layer,

A doping layer comprising a hole transporting compound and a P-type dopant; And

It may include a structure in which an undoped layer including the hole transport compound is formed.

The first electrode and the second electrode may mean an anode and a cathode, respectively, and vice versa. In the following description, the first electrode is an anode and the second electrode is a cathode.

In the present invention, the organic layer is a laminated structure including an organic material formed between the first electrode and the second electrode, and in some cases, may further include an inorganic material. In addition, the organic layer may include a plurality of layers injecting or transporting electrons and / or holes and a light emitting layer emitting light therethrough, and include all of the various stacking structures known in the art.

In the organic electronic device according to the exemplary embodiment of the present invention, holes injected from the first electrode are supplied to the light emitting layer through the doped layer and the undoped layer.

In the present invention, the hole-transporting compound is a generic name for a material that serves to inject and / or transport holes from the first electrode to the light emitting layer, and various materials applicable to the hole injection layer and / or hole transport layer known in the art may be used. Can be.

The doping layer may include a hole transport compound that induces hole transport as a host material, and may have a structure in which a P-type dopant is doped in the host material.

The organic electronic device according to an embodiment of the present invention may have a structure in which at least one doped layer is adjacent to the first electrode. The doped layer is characterized by a relatively higher hole concentration than the non-doped layer through the doping of the P-type dopant. As a result, hole mobility from the doped layer to the adjacent undoped layer can be improved. The improvement of hole mobility has the effect of lowering the driving voltage of the device and increasing the luminous efficiency.

The holes reaching the light emitting layer meet electrons injected from the second electrode, that is, the cathode, and reach the light emitting layer to form excitons, and light of a specific wavelength region is generated in the process of the excitons transitioning to the ground state.

As an example, the doped layer and the undoped layer according to the present invention may have the same composition except for the P-type dopant. Specifically, the doping layer and the non-doped layer may include the same hole transport compound, the doping layer may have a structure further comprising a P-type dopant. The organic electronic device according to the present invention proposes a structure including the P-type dopant only in the doped layer while the same components of the hole transporting compound constituting the doped layer and the undoped layer, and the structure is a doped layer and an undoped layer The mobility of holes can be improved by lowering an energy barrier that inhibits hole movement at an interface of. In addition, the organic electronic device according to the present invention can easily control the difference between the HOMO (High Occupied Molecular Orbital) level and the LUMO (Lowest Unoccupied Molecular Orbital) level of the doped layer and the undoped layer. In another aspect, by making the same components of the hole transport material included in the doped layer and the undoped layer, it is possible to reduce the physicochemical defects that may occur at the interface between different materials to facilitate hole injection into the light emitting layer. have.

As such, when the same hole-transporting compound is used, the doping layer and the non-doping layer can be continuously formed in one chamber, thereby simplifying the manufacturing process and reducing the manufacturing time. Furthermore, since physical properties such as glass transition temperatures of adjacent doped layers and undoped layers become similar, there is an advantage of increasing durability of the device.

As another example, the intermediate layer may be formed between the first electrode and the doping layer, and may be made of a compound for a P-type dopant. The intermediate layer means a structure in which one layer is formed using a compound for a P-type dopant without a separate hole transport compound. For example, the intermediate layer is the same P-type dopant compound as the P-type dopant included in the doping layer. It can be formed using. The intermediate layer serves to increase hole mobility between the first electrode and the doped layer. The compound for the P-type dopant includes various kinds of compounds that can be used as the P-type dopant injected into the doping layer, and is used as a main compound constituting the intermediate layer of the present invention. It demonstrates with reference.

The thickness of the intermediate layer is not particularly limited, and for example, 5 to 70 Pa, 6 to 60 Pa, 8 to 40 Pa, 10 to 30 Pa, 8 to 32 Pa, 8 to 12 Pa, 15 kV to 35 kV or 10 kV to 20 kV.

As one example, the HOMO level (E1) of the hole-transporting compound and the LUMO level (E2) of the P-type dopant may satisfy the relationship of Equation 1 below.

[Equation 1]

| E2 | -| E1 | ≥ -0.2 (eV)

The value of Equation 1 may be -0.2 or more, -0.1 or more, 0 or more, 0.01 or more, 0.05 or more, or 0.1 or more. The value of Equation 1 may be, for example, 2 or less, 1 or less, or 0.8 or less. This minimizes the energy level difference between the doped layer and the undoped layer, and facilitates the hole movement to the light emitting layer.

As an example, the HOMO level of the hole transporting compound may range from -6 to -4.5 eV, or -6 to -5.2 eV, or -5.8 to -5 eV, or -5.8 to -5.2 eV. The LUMO level of the hole transporting compound may range from -3 to -1.5 eV, or -3 to -2 eV, or -2.5 to -1.5 eV, or -3 to -2.5 eV, or -2.5 to -2 eV. As another example, the HOMO level of the P-type dopant is -10 to -7.5 eV, or -8.2 to -7.5 eV, or -10 to -8.2 eV, or -9.2 to -8.2 eV, or -9 to- May be 8.5eV. In addition, the LUMO level of the P-type dopant may range from -6.5 to -5 eV, or -5.4 to -5 eV, or -6.5 to -5.4 eV, or -6.2 to -5.4 eV.

Through this, hole mobility between the first electrode and the light emitting layer may be improved.

The HOMO level or LUMO level means an energy difference from a vacuum level, and is expressed as a negative value.

In one embodiment according to the present invention, the hole transporting compound may satisfy the structure of Formula 1 below.

[Formula 1]

In Chemical Formula 1,

L is

Indicates,

L ₁ , L ₂ , L ₃ and L ₄ are each independently an arylene group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, an alkenylene group having 2 to 60 carbon atoms, an alkynylene group having 2 to 60 carbon atoms, or A cycloalkylene group having 3 to 60 carbon atoms is represented,

p, q, r and s each independently represent an integer of 0 to 2, and the sum of p, q, r and s is an integer of 1 to 8,

R ₁ is hydrogen, an alkyl group having 1 to 60 carbon atoms, an alkenyl group having 2 to 60 carbon atoms, a cycloalkyl group having 3 to 60 carbon atoms, an alkoxy group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a hetero group having 2 to 60 carbon atoms A cyclic group, an aryloxy group having 6 to 60 carbon atoms, an arylthio group having 6 to 60 carbon atoms, an alkoxycarbonyl group having 1 to 60 carbon atoms, a halogen group, a cyano group, a nitro group, a hydroxyl group, or a carboxy group,

R ₂ is hydrogen, an alkyl group having 1 to 60 carbon atoms or an aryl group having 6 to 60 carbon atoms,

R ₃ and R ₄ are each independently represented by * -A ₁ -A ₂ -A ₃ -A ₄ ,

A ₁ , A ₂ and A ₃ are each independently a single bond, -O-, -S-, a linear or branched alkylene group having 1 to 60 carbon atoms (-(CH ₂ ) _j- , where j is 1 To an integer of 60 to 60), an arylene group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, a cycloalkylene group having 3 to 60 carbon atoms, an adamantylene group, a bicycloalkylene group having 7 to 60 carbon atoms, and a carbon atoms having 2 to 60 carbon atoms. 60 alkenylene group or C2-C60 alkynylene group is shown,

A ₄ is hydrogen, an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, a cycloalkyl group having 3 to 60 carbon atoms, an adamantyl group, a bicycloalkyl group having 7 to 60 carbon atoms, An alkenyl group having 2 to 60 carbon atoms, an alkynyl group having 2 to 60 carbon atoms, or * -NR ₅ R ₆ ;

R ₅ and R ₆ each independently represent hydrogen, an alkyl group having 1 to 60 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an arylamine group having 6 to 60 carbon atoms, or an aryl group having 6 to 60 carbon atoms,

In Formula 1, at least one of hydrogens of L, R ₁ , R ₂ , R _3, and R ₄ is each independently an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, and an arylamine having 6 to 60 carbon atoms. It may be substituted or unsubstituted with a group or heterocyclic group having 6 to 60 carbon atoms.

As one example, the hole transport compound having the structure of Formula 1 may be represented by the following formula (2).

[Formula 2]

L is

Indicates,

L ₁ , L ₂ , L ₃ and L ₄ each independently represent an arylene group having 6 to 60 carbon atoms or a heterocyclic group having 2 to 60 carbon atoms,

A ₁ , A ₂ and A ₃ each independently represent a single bond, an arylene group having 6 to 60 carbon atoms or a heterocyclic group having 2 to 60 carbon atoms,

A ₄ represents hydrogen, an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, or * -NR ₅ R ₆ ,

R ₅ and R ₆ each independently represent hydrogen, an alkyl group having 1 to 60 carbon atoms, an arylamine group having 6 to 60 carbon atoms, or an aryl group having 6 to 60 carbon atoms,

R ₇ represents hydrogen, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a heterocyclic group having 2 to 40 carbon atoms,

In Formula 2, at least one of hydrogen of L, R ₃ , R _4, and R ₇ is each independently an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, an arylamine group having 6 to 60 carbon atoms, or carbon atoms It may be substituted or unsubstituted with 6 to 60 heterocyclic groups.

In the present invention, "heterocyclic group" is meant to include all cases where heteroatoms other than carbon atoms are included in the ring structure. Specifically, the heterocyclic group includes a heterocycloalkyl group, heteroaryl group, heterocycloalkylene group or heteroarylene group, and the like, and may refer to, for example, a carbazole, dibenzofuran, or dibenzothiophene structure.

In the present invention, "aryl group" means a monovalent substituent derived from an aromatic hydrocarbon. Examples of the aryl group include a phenyl group, indenyl group, 1-naphthyl group, 2-naphthyl group, azulenyl group, heptalenyl group, biphenyl group, indasenyl group, acenaphthyl group, fluorenyl group, penalenyl group and phenanthre Monocyclic, bicyclic, or tricyclic aromatic hydrocarbon rings, such as a silyl group, anthracenyl group, a dihydropyrenyl group, a cyclopentacyclo octenyl group, and a benzocyclooctenyl group, etc. are mentioned.

Specifically, in Formula 2, R ₇ is hydrogen or a phenyl group, L may be selected from the structure of Table 1 below.

Table 1

No.	Substituent structure
One
2
3
4
5
6
7
8
9
10
11
12
13

For example, in each case of the substituents of Table 1, adjacent benzene rings may be connected to have a straight line as a whole by being connected to a para position. On the contrary, the plurality of benzene rings may be connected to each other so that the benzene rings are not limited only to the para position, so that L of Formula 1 may have a bent shape as a whole.

In addition, R ₃ and R ₄ of Chemical Formula 2 may be independently selected from the structures of Table 2 below.

TABLE 2

No.	Substituent structure	No.	Substituent structure
One		7
2		8
3		9
4		10
5		11
6		12

For example, the hole transport compound represented by Formula 1 according to the present invention may be selected from the hole transport compounds shown in Table 3 below.

TABLE 3

No.	Compound structure
One
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63

The organic electronic device may include 0.3 to 20 parts by weight, 0.5 to 15 parts by weight, 0.5 to 5 parts by weight, 1 to 10 parts by weight, 1 to 5 parts by weight, or 1.5 to 100 parts by weight of the hole transporting compound. To 6 parts by weight, or 2 to 5 parts by weight. In the above range, excessive leakage current can be prevented without damaging the physical properties of the hole transporting compound, and the energy barrier with the undoped layer can be effectively lowered.

The type of the P-type dopant is not particularly limited as long as it does not prevent hole movement in the device.

For example, the P-type dopant,

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinomidimethane;

Dicyanomethylenebis (4-oxo- [3,5-di-t-butyl] -2,5-cyclohexadienylidene) cyclopropane;

1,3-bis (dicyanomethylene) indane-2-ylidene-bis (4-oxo- [3,5-di-t-butyl] -2,5-cyclohexadienylidene) cyclopropane;

(N, N ', N ", N'"-cyclobutane-1,2,3,4-tetralidene) tetraaniline;

(2E, 2'E, 2''E, 2 '' 'E) -2,2', 2 '', 2 '' '-(cyclobutane-1,2,3-tethylidene) N, N ', N', N ''-cyclobutane-1,2,3,4-tetralidene (tetrakis (2-pentafluorophenyl) acetonitrile);

2- (6-dicyanomethylene-1,3,4,5,7,8-hexafluoro-6H-naphthalene-2-ylidene) malononitrile;

1,3,4,5,7,8-hexafluoronaphtho-2,6-quinonetetracyanomethane;

(2E, 2'E, 2''E) -2,2 ', 2' '-(cyclopropane-1,2,3-triylidene) tris (2- [2', 3 ', 5', 6'-tetrafluoropyrid-4'-yl] acetonitrile); And

2,2 '-(2- (3-((1r, 3s) -adamantan-1-yl) propyl) -3,5,6-trifluorocyclohexa-2,5-diene-1,4 -Diylidene) dimalononitriledipyrazino [2,3-f: 2 ', 3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile It may include.

As another example, the P-type dopant may have a structure of Formula 3.

[Formula 3]

In Formula 3,

R represents a cyano group, a sulfonamide group, a nitro group or a trifluoromethyl group, or

The sulfone group, sulfoxide group, and sulfonate group unsubstituted or substituted by the alkyl group having 1 to 60 carbon atoms, the aryl group having 6 to 60 carbon atoms, or the heteroaryl group having 2 to 60 carbon atoms.

As an example of the present invention, a doping layer including the hole transport compound and a P-type dopant; And the undoped layer comprising the hole-transporting compound may have a structure repeated 2 to 4 times, or a structure repeated 2 or 3 times. For example, the doped layer and the undoped layer may have a structure that is repeated twice. Through various experiments, the inventors have found that the power efficiency and lifespan of the device are remarkably improved when the doped layer and the undoped layer are repeated once on the first electrode, when repeated two to four times. It was.

In addition, the total thickness of the structure in which the doped layer and the undoped layer formed between the first electrode and the light emitting layer is repeated may range from 500 to 3000 m 3. As an example, the total thickness of the structure in which the doped and undoped layers are repeated is 700 to 2000 mm 3, 1000 to 1600 mm 3, 1000 to 1300 mm 3, 1400 to 2100 mm 1300 to 2000 mm 1300-1600 mm or 1350 mm. To 1500 ms. By adjusting the thicknesses of the doped layer and the undoped layer in the above range, it is possible to implement excellent luminous efficiency while preventing the organic electronic device from becoming too thick.

The thickness of the above-mentioned doped layer and the undoped layer is not particularly limited. For example, the thickness of the doped layer including the hole transporting compound and the P-type dopant may be 50 kPa to 400 kPa, 60 kPa to 300 kPa, 150 kPa. To 350 kPa or 80 kPa to 120 kPa. By adjusting the thickness of the doping layer in the above range, it is possible to sufficiently realize the doping effect, and at the same time prevent the occurrence of excessive leakage current. The thickness of the undoped layer may range from 200 kPa to 2000 kPa, 300 kPa to 600 kPa, 450 kPa to 550 kPa, 600 kPa to 1800 kPa or 700 kPa to 1500 kPa. In the structure in which the doped layer and the undoped layer are stacked, the thickness of the undoped layer may be formed relatively thicker than the thickness of the doped layer, and various experiments may be performed to improve the power efficiency and lifespan of the device. It was confirmed through.

As one example, between the first electrode and the light emitting layer, a doping layer comprising a hole transport compound and a P-type dopant; And a non-doped layer including the hole transporting compound is repeated twice. In this case, between the first electrode and the light emitting layer, a first doped layer having a thickness of 50 kPa to 200 kPa; A first undoped layer having a thickness of 300 kPa to 650 kPa; A second doped layer having a thickness of 50 kV to 200 kV; And a structure in which a second undoped layer having a thickness of 300 kV to 1500 kV is sequentially stacked. In the structure in which the doped layer and the undoped layer are repeatedly stacked twice, the thicknesses of the first and second doped layers are preferably adjusted to the same to similar ranges. The thickness of the first and second undoped layers may be thicker than that of the doped layer. In addition, the thickness of the second undoped layer may be relatively thicker than that of the first undoped layer.

As one example, the light emitting layer has a light emitting peak in the range of 400 nm to 500 nm, and between the first electrode and the light emitting layer, a first doped layer having a thickness of 80 kPa to 120 kPa; A first undoped layer having a thickness of 450 kPa to 550 kPa; A second doped layer having a thickness of 80 kV to 120 kV; And a second undoped layer having a thickness of 600 kPa to 800 kPa.

As another example, the light emitting layer has a light emitting peak in the range of 500 nm to 600 nm, and between the first electrode and the light emitting layer, a first doped layer having a thickness of 80 kPa to 120 kPa; A first undoped layer having a thickness of 450 kPa to 550 kPa; A second doped layer having a thickness of 80 kV to 120 kV; And a second undoped layer having a thickness of 850 kV to 1200 kV.

As another example, the light emitting layer has a light emitting peak in the range of 600 nm to 700 nm, and between the first electrode and the light emitting layer, a first doped layer having a thickness of 80 kPa to 120 kPa; A first undoped layer having a thickness of 450 kPa to 550 kPa; A second doped layer having a thickness of 80 kV to 120 kV; And a second undoped layer having a thickness of 1300 kPa to 1600 kPa.

As another example, the organic electronic device according to the present invention may further include an electron blocking layer formed between the light emitting layer and the repeating structure of the doped and undoped layers. As the material for forming the electron blocking layer, various materials commercially available in the art may be used without limitation. The electron blocking layer may serve to prevent electrons introduced from the second electrode from being injected into the hole transporting compound through the light emitting layer. In addition, by adjusting the thickness of the electron blocking layer to match the resonance length of the light emitting layer, the light emission efficiency may be further increased. Furthermore, the thickness of the electron blocking layer can be adjusted so that the excitons can be formed in the central portion of the light emitting layer.

The device including the organic electronic device according to the present invention is not particularly limited and includes, for example, a lighting device, a display device, an organic solar cell or an organic thin film transistor.

1 to 6 illustrate the stacked structure of devices according to one embodiment of the present invention, respectively.

Referring to FIG. 1, a doping layer 20 including a hole transporting compound and a P-type dopant was laminated on the ITO electrode 10 to a thickness of 100 GPa. The doping layer 20 is prepared by doping a P-type dopant to a hole transporting compound. The content of the P-type dopant may be variously adjusted in a range of 0.3 to 20 parts by weight based on 100 parts by weight of the doping layer 20. The undoped layer 30 having a thickness of 500 Å was laminated on the doped layer 20 using the hole transporting compound. Thereafter, the light emitting layer 40, the electron transport layer 50, the electron injection layer 60, and the aluminum electrode 70 may be sequentially stacked to form a device.

In FIG. 2, a doping layer 20 including a hole transporting compound and a P-type dopant is laminated on the ITO electrode 10 to a thickness of 100 GPa, and the undoped layer 30 including the hole transporting compound is 500. It laminated | stacked in the thickness of Å. Then, the doped layer 21 and the undoped layer 31 were laminated once more with the same composition. The light emitting layer 40, the electron transporting layer 50, the electron injection layer 60, and the aluminum electrode 70 were sequentially stacked on the repeating

structures

20, 21, 30, and 31 of the doped and undoped layers.

3 illustrates a structure in which the doped layers 20, 21, 22 and the

undoped layers

30, 31, and 32 each containing the hole transporting compound and the P-type dopant are repeatedly stacked three times on the ITO electrode 10. Shown. Then, the light emitting layer 40, the electron transporting layer 50, the electron injection layer 60 and the aluminum electrode 70 on the repeating

structures

20, 21, 22, 30, 31, and 32 of the doped and undoped layers. Were sequentially stacked.

In FIG. 4, the intermediate | middle layer 80 was laminated | stacked on the ITO electrode 10 in thickness of 10 microseconds. The doped layer 20 including the hole transporting compound and the P-type dopant was laminated on the stacked intermediate layer 80 to a thickness of 100 GPa. The content of the P-type dopant was adjusted in the range of 0.3 to 20 parts by weight based on 100 parts by weight of the doping layer 20. The undoped layer 30 having a thickness of 500 Å was laminated on the doped layer 20 using the hole transporting compound. Then, the light emitting layer 40, the electron transport layer 50, the electron injection layer 60 and the aluminum electrode 70 were sequentially stacked. 5 and 6 are structures in which the intermediate layer 80 mentioned in FIG. 4 is additionally formed in the laminated structure of FIGS. 2 and 3, respectively.

In FIG. 7, a first doped layer 30 including a hole transporting compound and a P-type dopant is laminated on the ITO electrode 10 to a thickness of 100 GPa, and the first undoped layer 30 including the hole transporting compound. ) Was laminated to a thickness of 500 mm 3. Then, the second doped layer 21 was laminated to a thickness of 100 kPa. The second undoped layer 31 may have various thicknesses in the range of about 700 kW to 1400 kW, in order to adjust the resonance distances of the

light emitting layers

41, 42, and 43. For example, the thickness of the second undoped layer 31 may be 700 Å in the blue light emitting area 41, and the green light emitting area 42 may be 1,000 Å or 1,400 두께 in the red light emitting area 43, respectively. Can be. Then, the electron transporting layer 50, the electron injection layer 60 and the aluminum electrode 70 were sequentially stacked on the

light emitting layers

41, 42, 43.

In addition, the present invention provides a method for manufacturing the organic electronic device described above.

In one embodiment, the manufacturing method,

Forming a doping layer comprising a hole transporting compound and a P-type dopant on the first electrode; And

The method may include forming an undoped layer including a hole transporting compound on the formed doped layer.

As one example, at least one of forming the doped layer and forming the undoped layer may be performed through a deposition process. In the present invention, the deposition process may use, for example, a vacuum vapor deposition process. The deposition process can be applied without particular limitation, and includes all of the various deposition processes known in the art. In addition, the present invention does not exclude the use of various coating or film lamination methods other than vapor deposition.

In addition, the forming of the doped layer and the forming of the undoped layer may be repeatedly performed in the same chamber through a deposition process. For example, the forming of the doping layer may be performed through simultaneous deposition of the hole transporting compound and the P-type dopant. In addition, the undoped layer may be performed by depositing a hole transporting compound, and the process of forming the doped layer and the undoped layer may be performed in one chamber.

As one example, forming the doped layer may include depositing a hole transport compound at a rate of 1 to 5 kW / sec, and simultaneously depositing a P-type dopant at a rate of 0.005 to 0.3 kW / sec. have. For example, the step of forming the doping layer, the hole transport compound is deposited at a rate of 1.5 kW / sec to 2.5 kW / sec, while the P-type dopant is deposited at a rate of 0.01 kW / sec to 0.1 kW / sec Process may be included. In addition, the step of forming the undoped layer is not particularly limited, and for example, the hole transporting compound may be deposited at a rate of 1 Å / sec to 5 sec / sec, or 1.5 Å / sec to 2.5 Å / Can be deposited at a rate of sec.

As an example of the manufacturing method according to the present invention, before forming the doping layer, the method may further include forming an intermediate layer with a compound for a P-type dopant substantially the same as the P-type dopant included in the doping layer. . In contrast, the compound for the P-type dopant may be a compound having a different structure from the P-type dopant.

8 is a schematic view of a manufacturing method according to an embodiment of the present invention. Each component is evaporated from the hole transporting compound evaporation source 200 and the P-type dopant material evaporation source 300 on one surface of the substrate 100 including the ITO layer and deposited on the substrate 100. For example, the hole transporting compound may be deposited at a rate of 1 kW / sec, and the P-type dopant material may be deposited at a rate of 0.05 kW / sec to form a doped layer. Then, in the same chamber, the P-type dopant material evaporation source 300 may be blocked and the undoped layer may be deposited using the hole transporting compound evaporation source 200. In the present invention, the above-described process of forming the doped layer and the undoped layer can be repeatedly performed in the same chamber.

Hereinafter, the present invention will be described in more detail with reference to examples. Embodiments of the present invention, etc. are for the purpose of detailed description of the invention, thereby not intended to limit the scope of the right.

Example 1 Synthesis of Hole Transporting Compound

Step 1) Synthesis of Intermediate A

Under a nitrogen atmosphere, 30 g (0.0753 mol) of 3- (4-bromophenyl) -9-phenyl-9H-carbazole in a 1 L three-necked round bottom flask ), 4-chlorophenylboronic acid (4-chlorophenylboronic acid) 12.9g (0.0828mol), tetrahydrofuran (THF, Tetrahydrofuran) 300ml and 150ml ethanol (EtOH, Ethanol) was added and stirred for 30 minutes. In addition, 41.84 g (0.3012 mol) of potassium carbonate (K ₂ CO ₃ ) was dissolved in 150 mL of water (H ₂ O), and then added to the 1 L three neck round bottom flask. Subsequently, 3.48 g (0.0030 mol) of tetrakis (triphenylphosphine) palladium (Pd (PPh ₃ ) ₄ , tetrakis (triphenylphosphine) palladium) were added to the 1 L three-necked round bottom flask, and the light was blocked for 3 hours. Reflux and then cooled to room temperature. The precipitate produced in the reaction mixture was filtered, washed sequentially with 900 ml of ethyl acetate (EA, ethyl acetate), 300 ml of methanol (MeOH, methanol), and 200 ml of distilled water, and then dried to obtain a white solid. 27.7g of intermediate A was obtained.

Yield: 85.5%

MALDI-TOF: m / z = 429.0116 (C ₃₀ H ₂₀ ClN = 429.10)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.67 to 8.66 (s, 1H), 8.39 to 8.37 (d, 1H), 7.92 to 7.91 (d, 2H), 7.83 to 7.78 (m, 5H) , 7.73 ~ 7.66 (m, 4H), 7.58 ~ 7.54 (m, 3H), 7.47 ~ 7.45 (m, 2H), 7.41 ~ 7.39 (d, 1H), 7.34 ~ 7.31 (t, 1H)

Step 2) Synthesis of Intermediate B

In a nitrogen atmosphere, in a 1 L three necked round bottom flask, 100 g (0.4289 mol) of 4-bromobiphenyl, 72.6 g (0.4289 mol) of 4-aminobiphenyl, sodium tert-butoxide ( 41.2 g (0.4289 mol) of NaOt-Bu, sodium tert-butoxide), 3.9 g (0.0042 mol) of tris (dibenzylideneaceton) dipalladium and 500 ml of toluene were added and stirred for 30 minutes. , 20.7 mL (0.0857 mol) of tri-tert-butylphosphine (dissolved in hexane at 10% by weight) was added to the 1 L three-necked round bottom flask, and reflux for 2 hours. The precipitate produced in the reaction mixture was filtered, washed with 1 L of methanol and dried to obtain 99.27 g of intermediate B as an ivory solid.

Yield: 97.3%

MALDI-TOF: m / z = 321.0799 (C ₂₄ H ₁₉ N = 312.20)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.47 (s, 1H), 7.63 to 7.57 (d, 8H), 7.44 to 7.41 (t, 4H), 7.30 to 7.27 (t, 2H), 7.22 ~ 7.20 (d, 4H)

Step 3) Synthesis of Compound 1

Under a nitrogen atmosphere, 6 g (0.0134 mol) of the intermediate A, 4.9 g (0.0153 mol) of the intermediate B, 1.6 g (0.0Ot-Bu, sodium tert-butoxide) in a 250 ml three-necked round bottom flask mol), palladium acetate (Pd (OAc) ₂ , palladium acetate) 0.06g (0.0002mol) and 30 ml of o-xylene were added and stirred for 10 minutes. Subsequently, 0.65 ml (0.0026 mol) of tri-tert-butylphosphine (dissolved at 10 parts by weight in xylene) was added, refluxed for 3 hours, and then cooled to room temperature. Thereafter, 90 ml of THF was added to the reaction mixture, which was stirred for 20 minutes. The reaction mixture was poured into 500 ml of methanol, precipitated, washed with methanol, filtered, and dried to obtain 8.7 g of a white solid compound 1.

Yield: 87%

MALDI-TOF: m / z = 714.13 (C ₅₄ H ₃₈ N ₂ = 714.30)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.66 (s, 1H), 8.39 to 8.38 (d, 1H), 7.91 to 7.89 (d, 2H), 7.83 to 7.57 (m, 19H), 7.58 ~ 7.19 (m, 16H)

Example 2 Synthesis of Hole Transporting Compound

Under a nitrogen atmosphere, 12 g (0.0279 mol) of the intermediate A, 9.07 g (0.0307 mol) of the intermediate C, and 3.21 g of sodium tert-butoxide (NaOt-Bu, sodium tert-butoxide) in a 250 ml three-necked round bottom flask mol), palladium acetate (Pd (OAc) ₂ , palladium acetate) 0.12g (0.0005mol) and 60ml of o-xylene were added and stirred for 10 minutes. Subsequently, 1.35 ml (0.0055 mol) of tri-tert-butylphosphine (dissolved at 10 parts by weight in xylene) was added, refluxed for 3 hours, and then cooled to room temperature. 180 ml of THF was added to the reaction mixture, which was stirred for 20 minutes. The reaction mixture was poured into 500 ml of methanol, precipitated, washed with methanol, filtered, and dried to yield 18.2 g of a brown solid compound 2.

Yield: 95%

MALDI-TOF: m / z = 688.24 (C ₅₂ H ₃₆ N ₂ = 688.29)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.63 (s, 1H), 8.37 to 8.36 (d, 1H), 8.05 to 8.04 (d, 1H), 7.97 to 7.82 (m, 2H), 7.86 ~ 7.84 (d, 2H), 7.80-7.79 (d, 1H), 7.68-7.72 (m, 4H), 7.65-7.52 (m, 11H), 7.50-7.38 (m, 7H), 7.34-7.28 (m, 2H), 7.10-7.04 (m, 4H)

Example 3 Synthesis of Hole Transporting Compound

Under a nitrogen atmosphere, 10 g (0.0232 mol) of the intermediate A, 9.25 g (0.0255 mol) of the intermediate D, and 2.68 g (0.0279 mol) of sodium tert-butoxide (NaOt-Bu) in a 250 ml three-necked round bottom flask ), Palladium acetate (Pd (OAc) ₂ , palladium acetate) 0.1g (0.0004mol) and 50ml of o-xylene (o-xylene) was added and stirred for 10 minutes. Subsequently, 1.12 ml (0.0046 mol) of tri-tert-butylphosphine (dissolved in 10 parts by weight of xylene) was added, refluxed for 3 hours, and then cooled to room temperature. 150 ml of THF was added to the reaction mixture, which was then stirred for 20 minutes. The reaction mixture was poured into 800 ml of methanol, precipitated, washed with methanol, filtered, and dried to obtain 17.2 g of a gray solid compound 3.

Yield: 98%

MALDI-TOF: m / z = 754.03 (C ₅₇ H ₄₂ N ₂ = 754.33)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.62 (s, 1H), 8.36-8.34 (d, 1H), 7.83-7.81 (d, 2H), 7.74-7.71 (m, 5H), 7.68 ~ 7.59 (m, 10H), 7.54 ~ 7.48 (m, 2H), 7.44 ~ 7.36 (m, 5H), 7.34 ~ 7.24 (m, 5H), 7.15 ~ 7.10 (d, 4H), 7.04 ~ 7.0 (d, 1H), 1.36 (s, 6H)

Example 4 Synthesis of Hole Transporting Compound

In a nitrogen atmosphere, a 250 ml three necked round bottom flask was placed in a 250 ml three necked round bottom flask with 9 g (0.0209 mol) of Intermediate A, 5.64 g (0.0230 mol) of Intermediate E, and 2.41 g (0.0251 g of sodium tert-butoxide). mol), palladium acetate (Pd (OAc) ₂ , palladium acetate) 0.09g (0.0004mol) and o-xylene (45ml) were added and stirred for 10 minutes. Subsequently, 1.01 ml (0.0041 mol) of tri-tert-butylphosphine (dissolved at 10 parts by weight in xylene) was added, refluxed for 3 hours, and then cooled to room temperature. 135 ml of THF was added to the reaction mixture, which was then stirred for 20 minutes. The reaction mixture was poured into 500 ml of methanol, precipitated, washed with methanol, filtered, and dried to obtain 12.6 g of a gray solid compound 4.

Yield: 94%

MALDI-TOF: m / z = 638.24 (C ₄₈ H ₃₄ N ₂ = 638.27)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.65 (s, 1H), 8.38 to 8.37 (d, 1H), 7.89 to 7.87 (d, 2H), 7.82 to 7.77 (m, 3H), 7.72 ~ 7.69 (m, 4H), 7.67 ~ 7.62 (m, 6H), 7.57 ~ 7.55 (t, 1H), 7.47 ~ 7.31 (m, 9H), 7.14 ~ 7.13 (m, 7H)

Example 5 Synthesis of Hole Transporting Compound

Under a nitrogen atmosphere, 10 g (0.0232 mol) of the intermediate A, 8.83 g (0.0255 mol) of the intermediate F, and 2.68 g of sodium tert-butoxide (NaOt-Bu, sodium tert-butoxide) in a 250 ml three-necked round bottom flask mol), palladium acetate (Pd (OAc) ₂ , palladium acetate) 0.1g (0.0004mol) and 30ml of o-xylene were added and stirred for 10 minutes. Subsequently, 1.12 ml (0.0046 mol) of tri-tert-butylphosphine (dissolved in xylene at 10% by weight) was added, refluxed for 3 hours, and then cooled to room temperature. 100 ml of THF was added to the reaction mixture, which was stirred for 20 minutes. The reaction mixture was poured into 500 ml of methanol, precipitated, washed with methanol, filtered and dried to obtain 16.7 g of a brown solid compound 5.

Yield: 97%

MALDI-TOF: m / z = 738.35 (C ₅₆ H ₃₈ N ₂ = 738.3)

¹ H-NMR (DMSO-d ₆ , 500 MHz) δ: 8.96 to 8.94 (d, 1H), 8.90 to 8.88 (d, 1H), 8.62 (s, 1H), 8.36 to 8.35 (d, 1H), 7.98 ~ 7.97 (d, 1H), 7.86-7.84 (d, 1H), 7.82-7.77 (m, 3H), 7.75-7.54 (m, 18H), 7.45-7.37 (m, 5H), 7.32-7.29 (m, 2H), 7.18 ~ 7.15 (m, 4H)

Purification was carried out to increase the purity of the compounds of Examples 1 to 5 synthesized above. The reason for such purification is that if impurities are mixed as the greatest factor affecting the light emitting characteristics of the device, the purity of the organic material included in the organic electronic device may cause quenching or deterioration of the device. Because it can be. High purity sublimation purification was performed to remove impurities contained in the compounds of Examples 1 to 5, thereby obtaining a high purity organic material of 99.95% or more.

실험예 1: 유기전자소자의 제작 및 전력효율 측정Experimental Example 1: Fabrication of organic electronic devices and measurement of power efficiency

The material prepared in Example 1, a hole transport material, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, were deposited on the ITO electrode. Specifically, the hole transporting compound (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 2 to 3 kW / sec, and at the same time, a P-type dopant having a structure of Formula 4 was 0.002 to 0.20 kW / sec. It was deposited at a rate of to form a doped layer of 10 to 500 kPa thick. On the formed doped layer, the material prepared in Example 1 was deposited to a thickness of 500 Å to form an undoped layer. Next, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed at a thickness of 300 kHz. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

[Formula 4]

[Formula 5]

[Formula 6]

[Formula 7]

[Formula 8]

The power efficiency of the organic electronic device manufactured in Experimental Example 1 was measured. Specifically, in the process of forming the doping layer, based on 100 parts by weight of the hole-transporting compound, the content of the P-type dopant was adjusted in the range of 0.1 to 20 parts by weight, and the thickness of the doping layer was changed to 10 to 500 kPa. . The power efficiency value when the luminance is 500 cd / m ² is shown in Table 4 below, and the unit is lm / W.

Table 4

	Thickness of doping layer
P-type dopant content	10Å	50Å	100Å	200Å	400 yen	500Å
0.1 parts by weight	1.4	2.1	3.3	4.1	2.7	2.1
0.3 parts by weight	2.9	4.8	5.7	6.5	4.2	2.8
0.5 parts by weight	3.4	5.2	6.1	7.2	4.9	3.5
1 part by weight	3.8	5.6	6.8	8.2	5.4	4.8
3 parts by weight	4.2	7.2	10.4	9.6	7.6	6.3
5 parts by weight	4.6	8.2	12.2	10.4	6.6	5.2
10 parts by weight	4.0	7.0	9.6	8.2	6.4	5.8
20 parts by weight	3.4	5.0	6.2	5.6	3.8	3.2

From the results in Table 4, it can be seen that the power efficiency is the best when the thickness of the doping layer is 100 kPa and the content of the P-type dopant is 5 parts by weight.

실험예 2: 유기전자소자의 제작 및 전력효율 측정Experimental Example 2: Fabrication of organic electronic devices and measurement of power efficiency

On the ITO electrode, a hole transport compound (host) prepared in Example 3, which is a hole transport compound, and F4-TCNQ having a structure of Formula 4, which is a P-type dopant material, were deposited together. Specifically, the material prepared in Example 3 is deposited on the ITO electrode at a rate of 2 to 3 kW / sec, and at the same time, a P-type dopant having a structure of Formula 4 is deposited at a rate of 0.002 to 0.20 kW / sec. A doped layer of 10 to 500 mm 3 thickness was formed. The material prepared in Example 3 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. Next, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed at a thickness of 300 kHz. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

The power efficiency of the organic electronic device manufactured in Experimental Example 2 was measured. Specifically, in the process of forming the doping layer, based on 100 parts by weight of the hole-transporting compound, the content of the P-type dopant was adjusted in the range of 0.1 to 20 parts by weight, and the thickness of the doping layer was changed to 10 to 500 kPa. . Power efficiency values when the luminance is 500 cd / m ² are shown in Table 5 below, and the unit is lm / W.

Table 5

	Thickness of doping layer
P-type dopant content	10Å	50Å	100Å	200Å	400 yen	500Å
0.1 parts by weight	1.8	2.0	3.8	3.2	1.2	0.9
0.3 parts by weight	3.1	3.3	5.1	4.7	2.4	2.2
0.5 parts by weight	3.5	3.9	5.8	5.1	3.0	2.9
1 part by weight	4.0	4.4	6.4	5.8	3.8	3.2
3 parts by weight	4.6	9.2	11.2	9.4	5.8	5.3
5 parts by weight	4.8	11.6	10.8	10.0	7.0	6.5
10 parts by weight	3.8	6.8	9.0	7.6	5.4	4.8
20 parts by weight	3.6	4.6	6.0	5.0	3.4	2.9

From the results in Table 5, the thickness of the doping layer was 50 kPa, the content of the P-type dopant was found to be the best power efficiency when 5 parts by weight.

실험예 3: 전력효율의 비교측정Experimental Example 3: Comparative Measurement of Power Efficiency

(1) A doping layer was formed by depositing together the material prepared in Example 1, which is a hole transporting compound, and F4-TCNQ having a structure of Formula 4, which is a P-type dopant material, on the ITO electrode. Specifically, the material prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was deposited at a rate of 0.05 Å / sec. A doped layer of thickness 형성 was formed. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. Next, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed at a thickness of 300 kHz.

BPhen having a structure of Formula 7 was formed to have a thickness of 200 kHz on the formed light emitting layer, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 kHz. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

(2) A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 kW / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was deposited at a speed of 0.05 kW / sec. To form a 300 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 300 kPa on the formed doped layer to form an undoped layer. Then, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz.

(3) A 300 TO thick layer was formed on the ITO electrode using the material prepared in Example 1 as a hole transporting compound. Then, the material prepared in Example 1 and F4-TCNQ having a structure of Formula 4 which is a P-type dopant material was deposited together. Specifically, the material (host) prepared in Example 1 was deposited on the formed laminated structure at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was 0.05 Å / sec. Was deposited to form a 300 mm thick layer. Then, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz.

The power efficiency of the organic electronic device manufactured in Experimental Example 2 was measured. The power efficiency values when the luminance is 500 cd / m ² are shown in Table 6 below, and the unit is lm / W.

Table 6

	Power Efficiency [lm / W]
One	12.2
2	8.6
3	6.2

In Table 6, the device structures 1 and 2 are structures in which a dopant-free layer (undoped layer) is formed on a dopant-containing layer (doped layer) on an ITO substrate. In comparison, the device structure of 3 is a structure in which a dopant free layer is directly stacked on an ITO substrate. It can be seen that 1 and 2 show a significantly better power efficiency than the structure of 3. In particular, the structure of 1 shows twice the power efficiency as the structure of 3.

실험예 4: 전력효율 및 소자수명 비교측정Experimental Example 4: Comparative Measurement of Power Efficiency and Device Life

A dopant layer was formed by depositing a hole transporting compound and F4-TCNQ, which is a dopant having the structure of Formula 4, together on the ITO electrode. Specifically, a hole transporting compound is deposited on the ITO electrode at a rate of 1 kW / sec, and at the same time, a P-type dopant F4-TCNQ having a structure of Chemical Formula 4 is deposited at a rate of 0.05 kW / sec, thereby doping 100 kW thick. A layer was formed. A hole transporting compound was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. Then, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz.

The kind of the hole transport compound used in each organic electronic device is as shown in Table 7. For each organic electronic device manufactured, power efficiency and device life were measured, and the results are shown in Table 7.

In the present invention, the life measurement of the organic electronic device was measured through the following process. The fabricated organic electronic device was dispensed with a UV curing sealant at the edge of the cover glass in a glove box in a nitrogen atmosphere, and then the organic electronic device and the cover glass were laminated and cured by irradiating UV light. Then, the lifetime of the device was measured in an oven at 85 ° C. T ₇₅ means the time taken for the luminance of the device to be 75% of the initial luminance.

TABLE 7

No.	Dopant Concentration: 5 parts by weight Doping Layer Thickness: 100 kPa	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
One	Undoped Layer [Example 1] Doped Layer [Example 1: Formula 4]	12.2	200
2	Undoped Layer [Example 3] Doped Layer [Example 3: Formula 4]	11.3	176
3	Undoped Layer [Example 3] Doped Layer [Example 1: Formula 4]	9.8	112
4	Undoped Layer [Example 9] Doped Layer [Example 9: Formula 4]	6.4	62
5	Undoped Layer [Example 10] Doped Layer [Example 10: Formula 4]	5.6	65
6	Undoped Layer [Example 11] Doped Layer [Example 11: Formula 4]	4.6	55
7	Undoped Layer [Example 9] Doped Layer [Example 10: Formula 4]	5.0	60

* Device life is based on initial luminance of 1000 cd / m ² .

In Table 6, Examples 1 and 3 respectively refer to materials synthesized in the examples, and the structure of Chemical Formula 9-11 is as follows.

[Formula 9]

[Formula 10]

[Formula 11]

Referring to the results of Table 7, it can be seen that when the structures synthesized in Examples 1 and 3 are used as the hole transporting compound, the power efficiency is about 2 times higher and the device life is 2 to 4 times higher than the other cases. have.

실험예 5: 전력효율 및 소자수명 비교측정Experimental Example 5: Comparative Measurement of Power Efficiency and Device Life

A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The processes of forming the doped and undoped layers were repeated 1 to 5 times, respectively.

Subsequently, a light emitting layer doped with 2 parts by weight of C545T having a structure of Formula 6 to tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 8 below.

Table 8

Repeated number of doped and undoped layers [times]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
One	12.2	200
2	14.4	275
3	11.6	289
4	10.7	302
5	8.5	213

From the results in Table 8, it can be seen that the repetition frequency of the doped layer and the undoped layer is the best power efficiency when two times. In addition, in terms of device life, it can be seen that the number of repetitions is the best.

실험예 6: 전력효율 및 소자수명 비교측정Experimental Example 6: Comparative Measurement of Power Efficiency and Device Life

The doped layer was formed by depositing together the material prepared in Example 3, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 3 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 3 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The processes of forming the doped and undoped layers were repeated 1 to 5 times, respectively.

Then, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 9 below.

Table 9

Repeated number of doped and undoped layers [times]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
One	10.8	120
2	11.8	152
3	9.6	160
4	8.3	175
5	6.8	131

From the results in Table 9, it can be seen that the repetitive frequency of the doped layer and the undoped layer is the best power efficiency when two times. In addition, in terms of device life, it can be seen that the number of repetitions is the best.

실험예 7: 전력효율 및 소자수명 비교측정Experimental Example 7: Comparative Measurement of Power Efficiency and Device Life

A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated one more time, but the thickness of the second undoped layer was varied in the range of 100 to 2000 mm 3.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 10 below.

Table 10

Second undoped layer thickness [Å]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
100	9.0	189
200	12.5	233
300	13.8	257
500	14.4	275
1000	15.8	310
1500	11.2	322
2000	8.6	252

From the results in Table 10, based on the case where the number of repetitions of the doped layer and the undoped layer is two times, the power efficiency is the best when the thickness of the second undoped layer is 1000 mW, and the second ratio in terms of device life. It can be seen that it is the best when the thickness of the doped layer is 1500 kPa. In consideration of power efficiency and device life, it is preferable that the thickness of the second undoped layer is 1000 GPa.

실험예 8: 전력효율 및 소자수명 비교측정Experimental Example 8: Comparative Measurement of Power Efficiency and Device Life

The doped layer was formed by depositing together the material prepared in Example 3, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 3 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 3 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated one more time, but the thickness of the second undoped layer was varied in the range of 100 to 2000 mm 3.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 11 below.

Table 11

Second undoped layer thickness [Å]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
100	5.6	101
200	8.9	125
300	10.1	130
500	11.8	152
1000	12.8	165
1500	9.8	178
2000	8.2	152

Based on the results of Table 11, the repetition frequency of the doped layer and the undoped layer is the highest when the thickness of the second undoped layer is 1000 mW, and the second ratio is the second in terms of device life. It can be seen that the case where the thickness of the doping layer is 1500 kPa is the best. In consideration of power efficiency and device life, it is preferable that the thickness of the second undoped layer is 1000 GPa.

실험예 9: 전력효율 및 소자수명 비교측정Experimental Example 9: Comparative Measurement of Power Efficiency and Device Life

(1) A doping layer was formed by depositing together the material prepared in Example 1, which is a hole transporting compound, and F4-TCNQ having a structure of Formula 4, which is a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated one more time, but the thickness of the second undoped layer was varied in the range of 500 to 1800 mm 3.

Then, 50 parts by weight of Ruburen having the structure of Formula 12 and 2.5 parts by weight of DCJTB having the structure of Formula 13 were doped into Tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 One light emitting layer (Red) was formed to a thickness of 300 kHz. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

[Formula 12]

[Formula 13]

(2) A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated one more time, but the thickness of the second undoped layer was varied in the range of 500 to 1800 mm 3.

Thereafter, a light emitting layer (Blue) doped with 2 parts by weight of DSBP having a structure of Formula 15 to DPVBi having a structure of Formula 14 was formed to a thickness of 300 kHz. BPhen having a structure of Formula 7 was formed to have a thickness of 200 kHz on the formed light emitting layer, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 kHz. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

[Formula 14]

[Formula 15]

Power efficiency was measured for each organic electronic device manufactured in this experimental example. The measurement results are shown in Table 12 below.

Table 12

Second undoped layer thickness [Å]	Power Efficiency [lm / W]
Second undoped layer thickness [Å]	Red	Blue
500	8.8	13.1
700	10.9	14.2
1000	12.5	12.8
1400	13.9	11.2
1800	12.3	9.8

From the results in Table 12, based on the case where the number of repetitions of the doped layer and the undoped layer is two times, when the red light emitting layer is applied, the thickness of the second undoped layer is 1400 Å, which is the best power efficiency. In addition, when the blue light emitting layer is applied, it can be seen that the power efficiency is the best when the thickness of the second undoped layer is 700 GPa.

The organic electronic device according to the present invention can realize the optimum device efficiency by varying the thickness of the laminated structure according to the light emitting region or type of the light emitting layer.

실험예 10: 전력효율 및 소자수명 비교측정Experimental Example 10: Comparative Measurement of Power Efficiency and Device Life

A P-type dopant material having a structure of Formula 16 alone was used on the ITO electrode to form an intermediate layer having a thickness of 5 to 70 mm 3. The doped layer was formed by depositing the material prepared in Example 1, which is a hole transporting compound, and the P-type dopant material having the structure of Formula 16 together on the formed intermediate layer. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, a P-type dopant having a structure of Formula 16 was deposited at a rate of 0.05 Å / sec. A doped layer of thickness 형성 was formed. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more.

Then, a light emitting layer doped with 3 parts by weight of C545T having a structure of Formula 6 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having a structure of Formula 5 was formed to a thickness of 300 kHz. BPhen having a structure of Formula 7 was formed to have a thickness of 200 kHz on the formed light emitting layer, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 kHz. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

[Formula 16]

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 13 below.

Table 13

From the results in Table 13, it can be seen that by forming a separate intermediate layer on the ITO substrate, the power efficiency and life of the device is improved. In particular, the thickness of the intermediate layer is the most excellent power efficiency in the case of 10 kHz, it can be seen that the device characteristics are similar when more than 20 kHz.

실험예 11: 전력효율 및 소자수명 비교측정Experimental Example 11: Comparative Measurement of Power Efficiency and Device Life

A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more, but the thickness of the second undoped layer was formed to be 700 kPa.

Then, pixel portions of the blue, red, and green light emitting regions were formed. The blue light emitting region was formed to a thickness of 300 kV by doping 2 parts by weight of DSBP having the structure of Formula 15 to DPVBi having the structure of Formula 14. The red light emitting region is doped with 50 parts by weight of Ruburen having the structure of Formula 12 and 2.5 parts by weight of DCJTB having the structure of Formula 13 to tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 To form a thickness of 300 mm. The green light emitting region was formed to a thickness of 300 kHz by doping C545T having the structure of Formula 6 to 2 parts by weight of tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5.

BPhen having a structure of Formula 7 was formed to have a thickness of 200 위에 on each of the formed light emitting layers, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 14 below.

Table 14

	Second undoped layer thickness [Å]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
Blue	700	14.2	313
Green	700	14.8	290
Red	700	10.9	262

From the results of Table 14, if the thickness of the second doped layer is formed to be the same regardless of the type of the light emitting layer applied to the pixel portion, the power efficiency and lifespan are different for each pixel. In particular, the lifespan of each pixel may adversely affect the device.

실험예 12: 전력효율 및 소자수명 비교측정Experimental Example 12: Comparative Measurement of Power Efficiency and Device Life

A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more, but the thickness of the second undoped layer was formed in the range of 700 to 1400 kPa.

For each organic electronic device manufactured, power efficiency and device life were measured, respectively. The measurement results are shown in Table 15 below.

Table 15

	Second undoped layer thickness [Å]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
Blue	700	14.2	313
Green	1000	15.8	310
Red	1400	13.9	308

From the results of Table 14, when the blue, green, and red light emitting layers are applied to the pixel portion of the device, if the thickness of the second undoped layer is formed to be the same, the difference in lifespan may occur. In contrast, it can be seen from the results in Table 15 that when the second undoped layer having a thickness optimized for the blue, green, and red light emitting layers is formed, the lifespan of each light emitting layer is similar.

실험예 13: 전력효율 및 소자수명 비교측정Experimental Example 13: Comparative Measurement of Power Efficiency and Device Life

(1) A doping layer was formed by depositing together the material prepared in Example 1, which is a hole transporting compound, and F4-TCNQ having a structure of Formula 4, which is a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 370 kPa over the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated two more times.

Thereafter, DPVBi having the structure of Formula 14 was doped with 2 parts by weight of DSBP having the structure of Formula 15 to form a light emitting layer (Blue) having a thickness of 300 kHz. BPhen having a structure of Formula 7 was formed to have a thickness of 200 위에 on each of the formed light emitting layers, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

(2) A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. On the doped layer formed, the material prepared in Example 1 was deposited to a thickness of 470 kPa to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated two more times.

Tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 was doped with 2 parts by weight of C545T having the structure of Formula 6 to form a light emitting layer (Green) having a thickness of 300 kHz. BPhen having a structure of Formula 7 was formed to have a thickness of 200 위에 on each of the formed light emitting layers, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

(3) A doping layer was formed by depositing together the material prepared in Example 1, which is a hole transporting compound, and F4-TCNQ having the structure of Formula 4, which is a P-type dopant, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 600 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated two more times.

300 Å thick by doping 50 parts by weight of Ruburen having the structure of Formula 12 and 2.5 parts by weight of DCJTB having the structure of Formula 13 to tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 The light emitting layer Red was formed. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

For each organic electronic device manufactured above, power efficiency and device life were measured. The measured results are shown in Table 16.

Table 16

Device structure	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
One	16.5	292
2	17.1	287
3	15.3	253

Compared with the results of Experimental Example 14, by applying a structure in which the doped layer and the undoped layer are repeated three times at an optimized thickness corresponding to the blue, green, and red light emitting layers, the power efficiency of the device is improved and the device life of the comparable level is improved. Can be implemented.

실험예 14: 전력효율 및 소자수명 비교측정Experimental Example 14: Comparative Measurement of Power Efficiency and Device Life

A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more, but the thickness of the second undoped layer was formed to be 1000 kPa.

The electron blocking layer was formed in the range of 50 to 150 kV using the material having the structure of Formula 17 on the formed laminate structure.

[Formula 17]

Then, tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 was doped with 2 parts by weight of C545T having the structure of Formula 6 to form a light emitting layer (Green) having a thickness of 300 kHz. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

Power efficiency and device life were measured according to the thickness of the electronic blocking layer of each organic electronic device manufactured above. The measured results are shown in Table 17.

Table 17

Electronic blocking layer thickness [Å]	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
50	16.2	325
100	17.8	350
150	14.8	316

From the results in Table 17, it can be seen that when the electron blocking layer is formed to a thickness of 100 kW, the power efficiency and the device life are excellent.

실험예 15: 전력효율 및 소자수명 비교측정Experimental Example 15: Comparative Measurement of Power Efficiency and Device Life

(1) A doping layer was formed by depositing together the material prepared in Example 1, which is a hole transporting compound, and F4-TCNQ having a structure of Formula 4, which is a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more, but the second undoped layer was formed to a thickness of 700 Å.

An electron blocking layer was formed to a thickness of 100 kHz on the formed laminated structure using a material having a structure of Formula 17. On the formed electron blocking layer, DPVBi having a structure of Formula 14 was doped with 2 parts by weight of DSBP having a structure of Formula 15 to form a light emitting layer (Blue) having a thickness of 300 kHz. BPhen having a structure of Formula 7 was formed to have a thickness of 200 위에 on each of the formed light emitting layers, and a material Liq having a structure of Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

(2) A doping layer was formed by depositing together the material prepared in Example 1, a hole transporting compound, and F4-TCNQ having a structure of Formula 4, a P-type dopant material, on the ITO electrode. Specifically, the material (host) prepared in Example 1 was deposited on the ITO electrode at a rate of 1 Å / sec, and at the same time, the P-type dopant F4-TCNQ having the structure of Formula 4 was carried out at a rate of 0.05 Å / sec. It was deposited to form a 100 Å thick doped layer. The material prepared in Example 1 was deposited to a thickness of 500 kPa on the formed doped layer to form an undoped layer. The process of forming the doped layer and the undoped layer was repeated once more, but the second undoped layer was formed to a thickness of 1400 kPa.

An electron blocking layer was formed to a thickness of 100 kHz on the formed laminated structure using a material having a structure of Formula 17. 50 parts by weight of Ruburen having the structure of Formula 12 and 2.5 parts of DCJTB having the structure of Formula 13 in tris (8-hydroxyquinoline) aluminum (Alq ₃ ) having the structure of Formula 5 on the formed electron blocking layer Doped portions to form a light emitting layer (Red) with a thickness of 300 kHz. BPhen having a structure of Chemical Formula 7 was formed to have a thickness of 200 위에 on the formed light emitting layer, and a material Liq having a structure of Chemical Formula 8 was formed to have a thickness of 10 Å. Thereafter, aluminum electrodes were laminated to a thickness of 1000 mm 3.

For each organic electronic device manufactured above, power efficiency and device life were measured. The measured results are shown in Table 18.

Table 18

	Power Efficiency [lm / W]	Life Span * T ₇₅ @ 85 ℃ [hr]
Blue	15.8	336
Red	15.1	320

From the results in Table 18, it can be seen that the electron blocking layer is formed to a thickness of 100 kHz, which is excellent in power efficiency and device life even when the blue and red light emitting layers are applied.

10: ITO electrode

20, 21, 22: doping layer

30, 31, 32: undoped layer

40, 41, 42, 43: light emitting layer

50: electron transport layer

60: electron injection layer

70: aluminum electrode

80: middle layer

100: substrate

200: hole transport compound evaporation source

300: P-type dopant material evaporation source

Claims

A first electrode; Second electrode; And at least one organic layer formed between the first electrode and the second electrode and including a light emitting layer,

A doping layer comprising a hole transporting compound and a P-type dopant between the first electrode and the light emitting layer; And a structure in which an undoped layer including the hole transport compound is formed.
The method of claim 1,

An organic electronic device formed between the first electrode and the doped layer, further comprising an intermediate layer made of a compound for a P-type dopant.
The method of claim 2,

An organic electronic device, wherein the P-type dopant of the doping layer and the compound for P-type dopant of the intermediate layer are the same compound.
The method of claim 1,

The HOMO level (E1) of the hole-transporting compound and the LUMO level (E2) of the P-type dopant satisfy the relationship of Equation 1 below:

[Equation 1]

| E2 | -| E1 | ≥ -0.2 (eV).
The method of claim 1,

The hole transport compound is an organic electronic device, characterized in that it has a structure of Formula 1:

[Formula 1]

In Chemical Formula 1,

L is
Indicates,

L 1 , L 2 , L 3 and L 4 are each independently an arylene group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, an alkenylene group having 2 to 60 carbon atoms, an alkynylene group having 2 to 60 carbon atoms, or A cycloalkylene group having 3 to 60 carbon atoms is represented,

p, q, r and s each independently represent an integer of 0 to 2, and the sum of p, q, r and s is an integer of 1 to 8,

R 1 is hydrogen, an alkyl group having 1 to 60 carbon atoms, an alkenyl group having 2 to 60 carbon atoms, a cycloalkyl group having 3 to 60 carbon atoms, an alkoxy group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a hetero group having 2 to 60 carbon atoms A cyclic group, an aryloxy group having 6 to 60 carbon atoms, an arylthio group having 6 to 60 carbon atoms, an alkoxycarbonyl group having 1 to 60 carbon atoms, a halogen group, a cyano group, a nitro group, a hydroxyl group, or a carboxy group,

R 2 is hydrogen, an alkyl group having 1 to 60 carbon atoms or an aryl group having 6 to 60 carbon atoms,

R 3 and R 4 are each independently represented by * -A 1 -A 2 -A 3 -A 4 ,

A 1 , A 2 and A 3 are each independently a single bond, -O-, -S-, a linear or branched alkylene group having 1 to 60 carbon atoms (-(CH 2 ) j- , where j is 1 To an integer of 60 to 60), an arylene group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, a cycloalkylene group having 3 to 60 carbon atoms, an adamantylene group, a bicycloalkylene group having 7 to 60 carbon atoms, and a carbon atoms having 2 to 60 carbon atoms. 60 alkenylene group or C2-C60 alkynylene group is shown,

A 4 is hydrogen, an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, a cycloalkyl group having 3 to 60 carbon atoms, an adamantyl group, a bicycloalkyl group having 7 to 60 carbon atoms, An alkenyl group having 2 to 60 carbon atoms, an alkynyl group having 2 to 60 carbon atoms, or * -NR 5 R 6 ;

R 5 and R 6 each independently represent hydrogen, an alkyl group having 1 to 60 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an arylamine group having 6 to 60 carbon atoms, or an aryl group having 6 to 60 carbon atoms,

In Formula 1, at least one of hydrogens of L, R 1 , R 2 , R 3, and R 4 is each independently an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, and an arylamine having 6 to 60 carbon atoms. It is unsubstituted or substituted by a group or a heterocyclic group having 6 to 60 carbon atoms.
The method of claim 5,

The hole-transporting compound having the structure of Chemical Formula 1 is represented by Chemical Formula 2 below:

[Formula 2]

In Chemical Formula 2,

L is
Indicates,

L 1 , L 2 , L 3 and L 4 each independently represent an arylene group having 6 to 60 carbon atoms or a heterocyclic group having 2 to 60 carbon atoms,

p, q, r and s each independently represent an integer of 0 to 2, and the sum of p, q, r and s is an integer of 1 to 8,

R 3 and R 4 are each independently represented by * -A 1 -A 2 -A 3 -A 4 ,

A 1 , A 2 and A 3 each independently represent a single bond, an arylene group having 6 to 60 carbon atoms or a heterocyclic group having 2 to 60 carbon atoms,

A 4 represents hydrogen, an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, a heterocyclic group having 2 to 60 carbon atoms, or * -NR 5 R 6 ,

R 5 and R 6 each independently represent hydrogen, an alkyl group having 1 to 60 carbon atoms, an arylamine group having 6 to 60 carbon atoms, or an aryl group having 6 to 60 carbon atoms,

R 7 represents hydrogen, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a heterocyclic group having 2 to 40 carbon atoms,

In Formula 2, at least one of hydrogen of L, R 3 , R 4 and R 7 is each independently an alkyl group having 1 to 60 carbon atoms, an aryl group having 6 to 60 carbon atoms, an arylamine group having 6 to 60 carbon atoms or carbon atoms Or substituted or unsubstituted with 6 to 60 heterocyclic groups.
The method of claim 6, wherein in Formula 2,

L is selected from the following substituents 1 to 13;

<Substituent 1>

<Substituent 2>

<Substituent 3>

<Substituent 4>

<Substituent 5>

<Substituent 6>

<Substituent 7>

<Substituent 8>

<Substituent 9>

<Substituent 10>

<Translator 11>

<Substituent 12>

<13 substituent>

R 3 and R 4 of Formula 2 are each independently selected from the structures of substituents 14 to 25,

<Exchanger 14>

<Substituent 15>

<Substituent 16>

<Substituent 17>

<Substituent 18>

<Substitution 19>

<Substituent 20>

<Translator 21>

<Substituent 22>

<Substituent 23>

<Substituent 24>

<Substituent 25>

R 7 in Chemical Formula 2 is hydrogen or a phenyl group.
The method of claim 5,

The hole transport compound having the structure of Formula 1 is selected from the following structures 1 to 63 organic electronic device.

<Structure 1>

<Structure 2>

<Structure 3>

<Structure 4>

<Structure 5>

<Structure 6>

<Structure 7>

<Structure 8>

<Structure 9>

<Structure 10>

<Structure 11>

<Structure 12

>

<Structure 13>

<Structure 14>

<Structure 15>

<Structure 16>

<Structure 17>

<Structure 18>

<Structure 19>

<Structure 20>

<Structure 21>

<Structure 22>

<Structure 23>

<Structure 24>

<Structure 25>

<Structure 26>

<Structure 27>

<Structure 28>

<Structure 29>

<Structure 30>

<Structure 31>

<Structure 32>

<Structure 33>

<Structure 34>

Structure 35

<Structure 36>

<Structure 37>

<Structure 38>

<Structure 39>

<Structure 40>

<Structure 41>

<Structure 42>

<Structure 43>

Structure 44

<Structure 45>

<Structure 46>

<Structure 47>

<Structure 48>

<Structure 49>

<Structure 50>

Structure 51

Structure 52

Structure 53

<Structure 54>

<Structure 55>

<Structure 56>

<Structure 57>

<Structure 58>

<Structure 59>

<Structure 60>

Structure 61

<Structure 62>

<Structure 63>
The method of claim 1, wherein the doped layer

Per 100 parts by weight of the hole-transporting compound,

An organic electronic device comprising 0.3 to 20 parts by weight of a P-type dopant.
The method of claim 1,

P-type dopant,

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinomidimethane;

Dicyanomethylenebis (4-oxo- [3,5-di-t-butyl] -2,5-cyclohexadienylidene) cyclopropane;

1,3-bis (dicyanomethylene) indane-2-ylidene-bis (4-oxo- [3,5-di-t-butyl] -2,5-cyclohexadienylidene) cyclopropane;

(N, N ', N ", N'"-cyclobutane-1,2,3,4-tetralidene) tetraaniline;

(2E, 2'E, 2''E, 2 '' 'E) -2,2', 2 '', 2 '' '-(cyclobutane-1,2,3-tethylidene) N, N ', N', N ''-cyclobutane-1,2,3,4-tetralidene (tetrakis (2-pentafluorophenyl) acetonitrile);

2- (6-dicyanomethylene-1,3,4,5,7,8-hexafluoro-6H-naphthalene-2-ylidene) malononitrile;

1,3,4,5,7,8-hexafluoronaphtho-2,6-quinonetetracyanomethane;

(2E, 2'E, 2''E) -2,2 ', 2' '-(cyclopropane-1,2,3-triylidene) tris (2- [2', 3 ', 5', 6'-tetrafluoropyrid-4'-yl] acetonitrile); And

2,2 '-(2- (3-((1r, 3s) -adamantan-1-yl) propyl) -3,5,6-trifluorocyclohexa-2,5-diene-1,4 -Diylidene) dimalononitriledipyrazino [2,3-f: 2 ', 3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile Organic electronic device comprising.
The method of claim 1,

An organic electronic device, characterized in that the p-type dopant has a structure of Formula 3 below:

[Formula 3]

In Chemical Formula 3,

R represents a cyano group, a sulfonamide group, a nitro group or a trifluoromethyl group, or

The sulfone group, sulfoxide group, and sulfonate group unsubstituted or substituted by the alkyl group having 1 to 60 carbon atoms, the aryl group having 6 to 60 carbon atoms, or the heteroaryl group having 2 to 60 carbon atoms.
The method of claim 1,

An organic electronic device comprising a structure in which the doped layer and the undoped layer are repeated two to four times in basic repeating units.
The method according to claim 1 or 12,

An organic electronic device having a total thickness of a structure in which a doped layer and an undoped layer formed between the first electrode and the light emitting layer are repeated is in a range of 500 kV to 3000 kV.
The method of claim 1 or 12,

The thickness of the doping layer is 50 kPa to 400 kPa,

The thickness of the undoped layer is 200 kPa to 2000 kPa organic electronic device.
The method of claim 1,

An organic electronic device comprising a structure in which a doped layer and an undoped layer are repeated twice in basic repeating units between the first electrode and the light emitting layer.
The method of claim 15,

Between the first electrode and the light emitting layer,

A first doped layer having a thickness of 50 kV to 200 kV;

A first undoped layer having a thickness of 300 kPa to 650 kPa;

A second doped layer having a thickness of 50 kV to 200 kV; And

An organic electronic device comprising a second undoped layer having a thickness of 300 GPa to 1500 GPa.
The method of claim 15,

The light emitting layer has a light emitting peak in the range of 400 nm to 500 nm,

Between the first electrode and the light emitting layer,

A first doped layer having a thickness of 80 kPa to 120 kPa;

A first undoped layer having a thickness of 450 kPa to 550 kPa;

A second doped layer having a thickness of 80 kV to 120 kV; And

An organic electronic device comprising a second undoped layer having a thickness of 600 kPa to 800 kPa.
The method of claim 15,

The light emitting layer has a light emitting peak in the range of 500 nm to 600 nm,

Between the first electrode and the light emitting layer,

A first doped layer having a thickness of 80 kV to 120 kV;

A first undoped layer having a thickness of 450 kPa to 550 kPa;

A second doped layer having a thickness of 80 kV to 120 kV; And

An organic electronic device comprising a second undoped layer of 850 1200 to 1200 Å thickness.
The method of claim 15,

The light emitting layer has a light emitting peak in the range of 600 nm to 700 nm,

Between the first electrode and the light emitting layer,

A first doped layer having a thickness of 80 kV to 120 kV;

A first undoped layer having a thickness of 450 kPa to 550 kPa;

A second doped layer having a thickness of 80 kPa to 120 kPa; And

An organic electronic device comprising a second undoped layer having a thickness of 1300 kPa to 1600 kPa.
The method of claim 1,

An organic electronic device further comprising an electron blocking layer formed between the repeating structure of the doped layer and the undoped layer and the light emitting layer.
The method of claim 20,

The electron blocking layer is formed to be adjacent to the light emitting layer.
Forming a doping layer comprising a hole transporting compound and a P-type dopant on the first electrode; And

A method of manufacturing an organic electronic device comprising forming a non-doped layer including the hole transport compound on the formed doped layer.
The method of claim 22,

Forming a doped layer; And forming the undoped layer twice or four times.
The method of claim 22,

At least one of the steps of forming the doped layer and the step of forming the undoped layer, manufacturing method of an organic electronic device, characterized in that performed through the deposition process.
The method of claim 24,

Forming the doped layer and the step of forming the undoped layer, a method of manufacturing an organic electronic device, characterized in that performed in the same chamber through a deposition process.
The method of claim 22,

Forming the doping layer is a method of manufacturing an organic electronic device, characterized in that carried out through the simultaneous deposition of a hole-transporting compound and a P-type dopant.
The method of claim 26,

Forming the doping layer,

The hole transport compound is deposited at a rate of 1 kW / sec to 5 kW / sec, and at the same time, the P-type dopant is deposited at a rate of 0.005 kW / sec to 0.3 kW / sec. Manufacturing method.
The method of claim 22,

Prior to forming the doped layer,

The method of manufacturing an organic electronic device, further comprising the step of forming an intermediate layer using the same compound as the P-type dopant included in the doping layer.