WO2013021884A1

WO2013021884A1 - Method for producing liquid crystal panel, and liquid crystal panel

Info

Publication number: WO2013021884A1
Application number: PCT/JP2012/069552
Authority: WO
Inventors: 達朗黒田
Original assignee: シャープ株式会社
Priority date: 2011-08-09
Filing date: 2012-08-01
Publication date: 2013-02-14

Abstract

To provide a liquid crystal panel by simple processes, in said liquid crystal panel occurrence of color mixing caused by light leakage able to be reduced. A method for producing a liquid crystal panel, which carries out the following steps. After forming a color insulating layer (15) on an array substrate (10) that is provided with a thin film transistor (30), a transparent electrode layer (12) is formed on the color insulating layer (15). Then, after depositing a photosensitive black resin material (24) on the transparent electrode layer (12), an opening through which the transparent electrode layer (12) is exposed is formed in the black resin material (24) by means of photolithography, and a portion of the black resin material (24) corresponding to the pixel region is subjected to half-tone exposure, while leaving a portion of the black resin material (24) corresponding to the light-shielding portion intact. Next, after removing the transparent electrode layer (12) exposed from the opening, the portion of the black resin material (24) having been subjected to the half-tone exposure is removed by subjecting the black resin material (24) to half ashing, thereby forming a black matrix (24) from the black resin material (24).

Description

Liquid crystal panel manufacturing method and liquid crystal panel

The present invention relates to a method for manufacturing a liquid crystal panel and a liquid crystal panel.
This application claims priority based on Japanese Patent Application No. 2011-173883 filed on Aug. 9, 2011, the entire contents of which are incorporated herein by reference. .

The liquid crystal display device includes a liquid crystal panel in which liquid crystal is sealed between a pair of translucent substrates, and a backlight device arranged on the back side of the panel. In the liquid crystal display device, the light emitted from the light source of the backlight device is irradiated from the back side of the liquid crystal panel, whereby the image displayed on the liquid crystal panel becomes visible.

The liquid crystal panel is composed of a pair of translucent substrates, that is, an array substrate on which thin film transistors (TFTs) are formed, and a color filter substrate including a color filter layer. The array substrate and the color filter substrate are respectively formed on separate substrates, and are bonded to each other after the liquid crystal material is dropped. In this way, the liquid crystal panel is manufactured.

However, in the conventional liquid crystal panel, when the bonding accuracy is poor, there is a problem that a part of the wiring of the pixel portion protrudes and the initial light transmittance cannot be achieved. In order to solve such a problem, a structure in which an interlayer insulating film in an array substrate is colored and used as a color filter layer has been proposed (for example, Patent Document 1).

FIG. 11 shows a configuration of a conventional liquid crystal panel 1000 having a structure in which an interlayer insulating film on an array substrate is colored and used as a color filter layer. FIG. 11 is a cross-sectional view schematically showing a configuration of a conventional liquid crystal panel 1000.

As shown in FIG. 11, a conventional liquid crystal panel 1000 includes an array substrate 110 on which a thin film transistor (TFT) 300 is formed, and a counter substrate 200 facing the array substrate 110. A liquid crystal layer 400 made of a liquid crystal material including liquid crystal molecules 420 is disposed between the array substrate 110 and the counter substrate 200.

In the array substrate 110, a TFT 300 is formed for each pixel. Specifically, the gate wiring 320 is formed on the array substrate 110, and the gate insulating film 330 is formed on the array substrate 110 so as to cover the gate wiring 320. A semiconductor layer 360 is formed on the gate wiring (gate electrode) 320 with a gate insulating film 330 interposed therebetween. A source wiring 340 s and a drain wiring 340 d are connected to the semiconductor layer 360. In this example, an insulating film 350 is formed on the array substrate 110 so as to cover the source wiring 340s and the drain wiring 340d.

A colored insulating layer 150 is formed on the array substrate 110. Specifically, a red insulating layer 150R, a blue insulating layer 150B, and a green insulating layer 150G (not shown) are formed on the insulating layer 350. A pixel electrode (transparent electrode) 120 is formed on the colored insulating layer 150 (for example, 150R, 150B). A part of the pixel electrode 120 is connected to the drain wiring 340 d of the TFT 300.

A pixel electrode (transparent electrode) 220 is formed on the liquid crystal layer 400 side of the counter substrate 200. A light shielding layer (black matrix) 240 is formed on the liquid crystal layer 400 side of the pixel electrode 220. Thus, the light shielding layer 240 provided on the counter substrate 200 separates adjacent pixels.

FIG. 12 shows a configuration of another conventional liquid crystal panel 2000 having a structure in which an interlayer insulating film in an array substrate is colored and used as a color filter layer. FIG. 12 is a cross-sectional view schematically showing a configuration of a conventional liquid crystal panel 2000. As shown in FIG.

As shown in FIG. 12, a conventional liquid crystal panel 2000 includes an array substrate 500 on which a thin film transistor (TFT) is formed, and a counter substrate (not shown) facing the array substrate 500. A liquid crystal layer (not shown) composed of a liquid crystal material containing liquid crystal molecules is disposed between the array substrate 500 and the counter substrate.

As shown in FIG. 12, TFTs are formed on the array substrate 500 for each pixel. Specifically, a gate wiring 510 is formed on the array substrate 500, and a gate insulating film 520 is formed on the array substrate 500 so as to cover the gate wiring 510. A semiconductor layer 530 is formed on the gate wiring (gate electrode) 510 with a gate insulating film 520 interposed therebetween. A source wiring 540 and a drain wiring 550 are connected to the semiconductor layer 530. A passivation film 580 is formed on the array substrate 500 so as to cover the source wiring 540 and the drain wiring 550.

On the passivation film 580, an insulating layer 630 in which the interlayer insulating film is colored red, blue or green is formed. A light shielding layer (black matrix) 650 is formed on the passivation film 580. The light shielding layer 650 is made of a black matrix material in which a pigment (black) is mixed in an interlayer insulating film.

An overcoat layer 640 is formed on the array substrate 500 so as to cover the insulating layer 630 and the light shielding layer 650. A pixel electrode (transparent electrode) 660 is formed on the overcoat layer 640. A part of the pixel electrode 660 is connected to the drain wiring 550 of the TFT. Thus, the light shielding layer 650 provided on the array substrate 500 separates adjacent pixels.

The conventional

liquid crystal panels

1000 and 2000 shown in FIGS. 11 and 12 described above have a structure in which an interlayer insulating film on the array substrate is colored and used as a color filter layer. For this reason, it is possible to avoid the above-mentioned problems that occur when the array substrate and the color filter substrate are formed on separate substrates and the liquid crystal material is dropped and then bonded together to manufacture a liquid crystal panel.

JP 2010-156960 A

However, in the conventional liquid crystal panel 1000 shown in FIG. 11, the light shielding layer 240 is formed on the counter substrate 200 side. For this reason, a gap exists between the light shielding layer 240 provided on the counter substrate 200 side and the colored insulating layer 150 as the color filter layer on the array substrate 110. Accordingly, color mixture occurs when light leaks from the side of the light shielding layer 240. On the other hand, it is possible to take measures such as arranging the light shielding layer 240 having a certain margin as a width, but in that case, there are restrictions such as difficulty in increasing the aperture ratio.

On the other hand, in the conventional liquid crystal panel 2000 shown in FIG. 12, a light shielding layer 650 is provided on the array substrate 500 side. For this reason, in the conventional liquid crystal panel 1000 shown in FIG. However, in the conventional liquid crystal panel 2000 shown in FIG. 12, after forming the light shielding layer 650, the overcoat layer 640 is formed, and the pixel electrode 660 is formed. As described above, the number of photolithography processes is increased, and therefore, the manufacturing cost of the liquid crystal panel 2000 is increased.

The present invention has been made in view of such a point, and its main object is to simply provide a liquid crystal panel capable of reducing the occurrence of color mixing due to light leakage.

In order to achieve the above object, the present invention provides a method for manufacturing a liquid crystal panel including the following steps. That is, the method for manufacturing a liquid crystal panel according to the present invention includes a step (a) of preparing an array substrate on which a thin film transistor is formed, a red insulating layer made of a red coloring material on the array substrate, and a blue coloring. A step (b) of forming a colored insulating layer having photosensitivity including a blue insulating layer made of a material and a green insulating layer made of a green coloring material, and a transparent electrode on the colored insulating layer; Forming a layer (c), depositing a photosensitive black resin material on the transparent electrode layer (d), and an opening for exposing the transparent electrode layer using a photolithography process Is formed on the black resin material, and halftone exposure is performed on a portion corresponding to the pixel region in the black resin material, and a portion corresponding to the light shielding portion in the black resin material is left. A step (e), a step (f) of removing the transparent electrode layer exposed in the opening, and a portion of the black resin material subjected to the halftone exposure by half ashing the black resin material And thereby forming a black matrix from the black resin material (g).

In a preferred aspect of the manufacturing method disclosed herein, the step (f) is performed by wet etching using the black resin material as a mask.

In a preferred aspect of the manufacturing method disclosed herein, the array substrate is formed with a wiring layer including gate wirings and auxiliary capacitance wirings extending in the row direction, and source wirings extending in the column direction. In the step (e), a metal layer made of a metal material constituting the wiring layer is disposed below the opening where the transparent electrode layer is exposed.

In a preferred aspect of the manufacturing method disclosed herein, in the step (e), the photolithography is performed so that a convex portion defining a rib is formed in a portion corresponding to the pixel region in the black resin material. In the step (g), a rib made of the black resin material is formed on the transparent electrode layer by the half ashing.

The liquid crystal panel according to the present invention includes an array substrate on which a thin film transistor is formed, a red insulating layer formed on the array substrate and made of a red coloring material, a blue insulating layer made of a blue coloring material, A colored insulating layer including a green insulating layer made of a green coloring material, a pixel electrode formed on the colored insulating layer, and a black matrix formed on the pixel electrode so as to cover the thin film transistor The pixel electrode is separated at a position that divides the pixel region on the array substrate, and a part of the colored insulating layer exposed in the part where the pixel electrode is separated is removed, The array substrate is formed with a wiring layer including gate wirings and auxiliary capacitance wirings extending in the row direction and source wirings extending in the column direction. Below the part of the edge layer has been removed region, the metal layer made of a metal material constituting the wiring layer is disposed.

Another liquid crystal panel according to the present invention includes an array substrate on which a thin film transistor is formed, a red insulating layer formed on the array substrate and made of a red coloring material, and a blue insulating layer made of a blue coloring material. A colored insulating layer including a green insulating layer made of a green coloring material, a pixel electrode formed on the colored insulating layer, and a thin film transistor formed on the pixel electrode so as to cover the thin film transistor A rib made of the same material as that of the black matrix is formed on the surface of the portion corresponding to the pixel region in the pixel electrode.

According to the present invention, after forming a transparent electrode layer on the colored insulating layer, a black resin material having photosensitivity is deposited on the transparent electrode layer, and then the transparent electrode is formed using a photolithography process. An opening exposing the layer is formed in the black resin material. Further, in the photolithography process, halftone exposure is performed on a portion corresponding to the pixel region in the black resin material, and a portion corresponding to the light shielding portion in the black resin material is left. Next, after removing the transparent electrode layer exposed in the opening, by removing the portion of the black resin material that has been subjected to the halftone exposure by half ashing, thereby, A black matrix is formed from the black resin material. Therefore, it is possible to simply provide a liquid crystal panel that can reduce the occurrence of color mixing due to light leakage.

(A) And (b) has shown typically the structure of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a cross-sectional view schematically showing a configuration of a channel portion in the liquid crystal panel 100 according to the embodiment of the present invention. (B) is sectional drawing which shows typically the structure of the auxiliary capacity | capacitance (Cs) part in the liquid crystal panel 100 which concerns on embodiment of this invention. (C) is a top view which shows typically the structure of the liquid crystal panel 100 which concerns on embodiment of this invention. (A) And (b) has shown typically the cross-sectional structure for demonstrating the effect of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a cross-sectional view schematically showing a configuration of a liquid crystal panel 1100 of a comparative example in which a light shielding layer 240 is formed on the counter substrate 200 side. (B) is sectional drawing which shows typically the structure of the liquid crystal panel 100 which concerns on embodiment of this invention by which the black matrix 24 was formed on the color filter (coloring insulating layer 15). (A)-(c) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the auxiliary | assistant capacity | capacitance (Cs) part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. FIG. 6C is a process plan view for explaining the method for manufacturing the liquid crystal panel 100. (A) And (b) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the auxiliary | assistant capacity | capacitance (Cs) part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. (A) And (b) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the auxiliary | assistant capacity | capacitance (Cs) part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. (A)-(c) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the auxiliary | assistant capacity | capacitance (Cs) part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. FIG. 6C is a process plan view for explaining the method for manufacturing the liquid crystal panel 100. (A) And (b) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the auxiliary | assistant capacity | capacitance (Cs) part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. (A)-(c) is process drawing for demonstrating the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. Specifically, (a) is a process cross-sectional view of a channel portion for explaining a method for manufacturing the liquid crystal panel 100. (B) is process sectional drawing of the capacitor part for demonstrating the manufacturing method of the liquid crystal panel 100. FIG. FIG. 6C is a process plan view for explaining the method for manufacturing the liquid crystal panel 100. (A) is sectional drawing of the channel part which shows the structure of the liquid crystal panel 100 which concerns on the 2nd Embodiment of this invention. (B) is a top view which shows the structure of the liquid crystal panel 100 which concerns on the 2nd Embodiment of this invention. (A) And (b) is process sectional drawing of the channel part which shows the 1st modification of the manufacturing method of the liquid crystal panel 100 which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of the conventional liquid crystal panel 1000 typically. It is sectional drawing which shows the structure of the conventional liquid crystal panel 2000 typically.

Several preferred embodiments of the present invention will be described with reference to the drawings. Note that matters other than those specifically mentioned in the present specification and necessary for the implementation of the present invention (for example, the configuration and construction method of the liquid crystal panel) are designed by those skilled in the art based on the prior art in the field. It can be grasped as a matter. The present invention can be carried out based on the contents disclosed in the present specification and common general technical knowledge in the field.

Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS. FIG. 1 schematically shows a configuration of a liquid crystal panel 100 according to an embodiment of the present invention.

Specifically, FIG. 1A is a cross-sectional view schematically showing a configuration of a channel portion in a thin film transistor (TFT) 30 of a liquid crystal panel 100 according to an embodiment of the present invention. FIG. 1B is a cross-sectional view schematically showing the configuration of the auxiliary capacitance (Cs) portion in the liquid crystal panel 100 of the present embodiment. FIG. 1C is a plan view schematically showing the configuration of the pixel region in the liquid crystal panel 100 of the present embodiment. 1A and 1B are cross-sectional views showing the thin film transistor (TFT) 30 and the auxiliary capacitor (Cs) for easy understanding, and the plan view shown in FIG. 1C. And does not necessarily correspond. Specifically, FIGS. 1A and 1B are schematic cross-sectional views in which cross sections of different color pixel regions adjacent to each other appear, and are cross-sectional views along the row direction or the column direction. It does not represent.

In addition, in the following drawings, the same code | symbol is attached | subjected to the member and site | part which show the same effect | action, and the overlapping description may be abbreviate | omitted or simplified. In addition, the dimensional relationship (length, width, thickness, etc.) in each drawing does not necessarily accurately reflect the actual dimensional relationship. In addition, hatching in the drawing is given mainly for the purpose of easy understanding of the constituent elements, and does not necessarily represent the elements of the material. Furthermore, in the following description, “front” or “front side” refers to the side facing the viewer (viewer) in the liquid crystal panel 100, and “back” or “back side” refers to the viewer in the liquid crystal panel 100. The side that does not face is said.

As shown in FIG. 1A and the like, the liquid crystal panel 100 of the present embodiment has a structure in which an interlayer insulating film in the array substrate 10 is colored and used as a color filter layer. Specifically, the liquid crystal panel 100 of this embodiment includes an array substrate 10 on which a thin film transistor (TFT) 30 is formed, and a counter substrate (not shown) facing the array substrate 10. A liquid crystal layer (not shown) is disposed between the counter substrate. The liquid crystal panel of the present embodiment is a so-called active matrix type (TFT type) liquid crystal panel.

Note that a sealing material (not shown) for sealing the liquid crystal layer is formed on the periphery of the array substrate 10 and the counter substrate. The liquid crystal layer is made of a liquid crystal material containing liquid crystal molecules, and the liquid crystal material changes its optical characteristics by manipulating the alignment of the liquid crystal molecules in accordance with the application of an electric field between the array substrate 10 and the counter substrate. .

As shown in FIGS. 1A and 1B, the array substrate 10 is composed of a translucent substrate (glass substrate). Further, as shown in FIGS. 1A and 1C, the array substrate 10 is provided with a TFT 30 for each pixel. In addition, as shown in FIG. 1C, the array substrate 10 is formed with gate wiring 32 extending in the row direction and auxiliary capacitance wiring (Cs wiring) extending in parallel therewith. A source wiring 34 extending in the column direction is formed on the array substrate 10. Since the row direction and the column direction are for convenience, the relationship may be reversed in addition to the case where the row direction means the horizontal direction and the column direction means the vertical direction.

More specifically, a gate wiring 32 is formed on the array substrate 10, and a gate insulating film 33 is formed on the array substrate 10 so as to cover the gate wiring 32. A semiconductor layer 36 is formed on the gate wiring (gate electrode) 32 via a gate insulating film 33. The semiconductor layer 36 includes a wiring 34 s extending from the source wiring 34 arranged in the row direction to the source electrode (for convenience, the wiring 34 s is also referred to as a source wiring), and a drain electrode extending from the drain electrode facing the source electrode. The wiring 34d is connected. The TFT 30 is constructed by the gate wiring (gate electrode) 32, the gate insulating film 33, the semiconductor layer 36, the source wirings 34 and 34s, and the drain wiring 34d. In this example, an insulating film (for example, a passivation film or a protective film) 35 is formed on the array substrate 10 (more precisely, on the gate insulating film 33) so as to cover the source wiring 34s and the drain wiring 34d. .

Further, as shown in FIGS. 1B and 1C, in the configuration of the present embodiment, the auxiliary capacitance (Cs) is formed on the array substrate 10. Here, the auxiliary capacitance (Cs) is formed by the Cs electrode, the insulating film 33, and the pixel electrode 12 that are located in a part of the auxiliary capacitance wiring (Cs wiring) 31. The insulating film (dielectric layer) constituting the auxiliary capacitance (Cs) is located between the Cs electrode (31) and the pixel electrode 12, and the auxiliary capacitance (Cs) is the Cs wiring 31 and the pixel electrode. 12 is formed at the intersection with 12. Further, the auxiliary capacitor (Cs) has a role of supplying charges to the liquid crystal layer and maintaining the luminance of the pixel in a period in which the gate signal is OFF. In the auxiliary capacitance (Cs) portion of the liquid crystal panel 100 of the present embodiment, an insulating film 33 is formed on the array substrate 10 so as to cover the Cs wiring 31, and the source is formed so as to get over the Cs wiring 31. The wiring 34 extends.

In the configuration of this embodiment, a colored insulating layer 15 is formed on the array substrate 10. Specifically, on the array substrate 10, a first colored insulating layer 15 (for example, a red insulating layer 15R) made of a first colored material (for example, a red colored material) and a second colored material (for example, a red colored material) , A blue colored material), a second colored insulating layer 15 (for example, a blue colored insulating layer 15B), and a third colored insulating layer 15 (for example, a green colored material) (for example, green colored material). 1, the colored insulating layer 15 of each color is formed on the insulating film 35. In the example shown in FIG.

The colored insulating layer 15 (15R, 15B, 15G) of each color functions as a color filter layer. Specifically, the colored insulating layers 15 (15R, 15B, 15G) for each color are made of a light-transmitting resin containing a pigment for each color. For example, a photoresist material such as a photosensitive acrylic resin ( For example, the product name is JSR (trade name JAS). In the configuration of the present embodiment, the color insulating layer (15R, 15B, 15G) that functions as a color filter layer is formed on the array substrate 10, and therefore the color filter layer is not disposed on the counter substrate side. . Note that polarizing plates (not shown) are attached to the outer surfaces of the array substrate and the counter substrate, respectively.

In the configuration of the present embodiment, a pixel electrode (transparent electrode) 12 is formed on the colored insulating layer 15 (for example, 15R, 15B). The pixel electrode 12 is made of, for example, ITO (Indium Tim Oxide) and has a vertically long rectangular shape. A part of the pixel electrode 12 is connected to the drain wiring 34d of the TFT 30, as shown in FIG. In addition, an opening 25 a that defines the outline of the pixel electrode 12 is formed in the transparent electrode layer (ITO layer) constituting the pixel electrode 12. Further, as shown in FIG. 1B, an opening 25 b for connecting the pixel electrode 12 and the source wiring 34 is formed on the Cs wiring 31. An alignment film (not shown) that determines the alignment direction of the liquid crystal molecules in the liquid crystal layer is formed on the pixel electrode 12.

In the configuration of the present embodiment, a black matrix (light shielding layer or light shielding portion) 24 for separating adjacent pixels is formed on the pixel electrode 12. The black matrix 24 is made of a black resin material in which a pigment is mixed into a resin. In the example shown in FIG. 1A, the black matrix 24 is formed so as to distinguish the blue pixel (B) and the red pixel (R). In the example shown in FIG. 1C, the black matrix 24 is formed in the opening 25b formed on the Cs wiring 31.

Note that the colored insulating layer 15 of this embodiment has a role as an interlayer insulating film located between the pixel electrode 12 and the source wiring 34 (or 34s). More specifically, when only a relatively thin insulating film (passivation film) 35 exists between the pixel electrode 12 and the source wiring 34s, the pixel electrode is affected by the electric field generated around the source wiring 34. The voltage of 12 rises, and this may cause a problem that the alignment state of the liquid crystal molecules changes at an unintended timing. As in the configuration of the present embodiment, by providing a colored insulating layer (interlayer insulating film) 15 thicker than the insulating film 35 between the pixel electrode 12 and the source wiring 34, the source wiring 34 is surrounded. The influence of the generated electric field can be reduced. As a result, it is possible to prevent a problem that the alignment state of the liquid crystal molecules changes at an unintended timing.

The thickness of the transparent substrate (glass substrate) constituting the main body of the array substrate 10 and the counter substrate of the present embodiment is, for example, 0.5 to 1 mm. In the manufacturing stage, the array substrate 10 and the counter substrate may be in the form of a mother glass (large substrate) capable of obtaining multiple liquid crystal panels, or may be a substrate having the size of one liquid crystal panel. The semiconductor layer 36 constituting the TFT 30 is a silicon layer made of silicon (for example, amorphous silicon), but a semiconductor layer made of another semiconductor material can be used. For example, the semiconductor layer 36 may be an oxide semiconductor layer made of an oxide semiconductor material.

Further, the wiring layers such as the gate wiring 32, the source wiring 34, and the drain wiring 34d are composed of a conductive layer such as a metal layer. For example, the gate wiring 32 is composed of a metal layer such as aluminum or copper, but a multilayer film may be used. Each of the gate wiring 32, the source wiring 34, and the drain wiring 34d may be formed of the same conductive layer, or may be made of different conductive layers. The gate insulating film 33 is made of, for example, silicon nitride. The insulating film (passivation film) 35 is made of, for example, nitride (silicon nitride or the like). The thicknesses and materials of the various layers are appropriately selected according to the manufacturing apparatus and manufacturing process, and are not particularly limited.

In the configuration of the liquid crystal panel 100 of the present embodiment, a black matrix (light shielding layer) 24 is formed on the colored insulating layer (interlayer insulating film) 15 on the array substrate 10. That is, the liquid crystal panel 100 according to the present embodiment can prevent color mixing of adjacent different colors on the colored insulating layer 15 functioning as a color filter, thereby enabling color development without bleeding. Therefore, in the configuration of the liquid crystal panel 100 of the present embodiment, the black matrix 24 formed on the colored insulating layer 15 in the array substrate 10 can be effectively shielded from light, and as a result, the color reproducibility is improved. be able to.

Specifically, FIG. 2 schematically shows a cross-sectional configuration for explaining the effect of the liquid crystal panel 100 according to an embodiment of the present invention. FIG. 2A is a cross-sectional view schematically showing a configuration of a liquid crystal panel 1100 of a comparative example in which a black matrix 240 is formed on the counter substrate 200 side. FIG. 2B is a cross-sectional view schematically showing the configuration of the liquid crystal panel 100 of the present embodiment in which the black matrix 24 is formed on the color filter (colored insulating layer 15).

As shown in FIG. 2A, according to the configuration of the liquid crystal panel 1100 of the comparative example, for example, the light 60A that has passed through the green insulating layer 150G facing the line of sight 65 on the viewer side is provided on the counter substrate 200 side. The black matrix 240 is shielded from light. Thus, since there is a gap between the black matrix 240 and the color filter (colored insulating layer 150), for example, part of the light 60A that has passed through the green insulating layer 150G leaks from the side of the black matrix 240. (See arrow 62).

On the other hand, as shown in FIG. 2B, according to the configuration of the liquid crystal panel 100 according to the present embodiment, for example, the light 60B that has passed through the green insulating layer 15G facing the line of sight 65 on the viewer side is a color filter. The light is shielded by the black matrix 24 on the (colored insulating layer 15). As described above, since the black matrix 24 can effectively prevent color mixing, color development without blurring is possible, and color reproducibility can be improved.

Next, a method for manufacturing the array substrate 10 or the liquid crystal panel 100 including the black matrix 24 in the present embodiment will be described. In the configuration of the present embodiment, the black matrix 24 is formed on the colored insulating layer 15 (15R, 15B, 15G) in the array substrate 10.

The formation of the black matrix 24 on the colored insulating layer 15 in the array substrate 10 is performed as shown in FIGS. 3 to 8 are process diagrams for explaining a method of manufacturing the liquid crystal panel 100 according to an embodiment of the present invention. Specifically, FIG. 3A to FIG. 8A are process cross-sectional views of a channel portion for explaining a method of manufacturing the liquid crystal panel 100 of the present embodiment. FIGS. 3B to 8B are process cross-sectional views of the auxiliary capacitor (Cs) portion for explaining the method for manufacturing the liquid crystal panel 100 of the present embodiment. FIGS. 3, 6, and 8 (c) are process plan views for explaining a method for manufacturing the liquid crystal panel 100 according to the present embodiment.

First, as shown in FIGS. 3A to 3C, an array substrate 10 on which a colored insulating layer 15 (a red insulating layer 15R, a blue insulating layer 15B, and a green insulating layer 15G) is formed is prepared. As the array substrate (glass substrate) 10 prepared here, a substrate on which the TFT 30 having the above-described configuration is formed is used. The red insulating layer 15R, the blue insulating layer 15B, and the green insulating layer 15G are each formed by a known photolithography process, and specifically, formed by repeating a coating process, an exposure process, a development process, and the like.

In the configuration of the present embodiment, as shown in FIG. 3A, an opening 23a that separates the insulating layers of the respective colors in the colored insulating layer 15 is formed. The opening 23a is formed so as to expose a part of the drain wiring 34d. Further, as shown in FIG. 3B, an opening 23b exposing the source electrode 34 is formed in the auxiliary capacitance portion of the present embodiment.

Next, as shown in FIGS. 4A and 4B, an ITO (Indium Time Oxide) layer 12 is deposited as a transparent electrode material on the entire surface of the array substrate 10 by sputtering, for example. Thereby, the ITO layer 12 and the source electrode 34 are electrically connected.

Next, as shown in FIGS. 5A and 5B, on the ITO layer 12, a photoresist material such as a resin containing a black pigment, such as a photosensitive acrylic resin (for example, The product name JAS manufactured by JSR) is applied. The black resin layer 24 has a thickness of about 1 μm to 3 μm, for example.

Next, as shown in FIGS. 6A to 6C, the black resin layer (photoresist material) 24 is exposed using a photomask that opens a predetermined region to be a part to be separated from the pixel electrode. At this time, halftone exposure is performed on the black resin layer 24 in the pixel region so that the thickness of the black resin layer 24 in the pixel region after development is about half of the thickness of the black resin layer 24 in the light shielding region. Apply. Then, by developing the exposed black resin layer 24, openings 24h1 and 24h2 exposing the ITO layer 12 are formed at predetermined positions, and the thickness of the black resin layer 24 in the pixel region is about half. become. Here, an example has been described in which the thickness of the black resin layer 24 in the pixel region is about half, but the present invention is not limited thereto, and the processing may be performed so that the thickness of the black resin layer 24 in the pixel region remains. The thickness of the photoresist material 24 in the light shielding region is the same as the thickness before development.

Note that halftone exposure is exposure using a halftone mask (or gray tone mask). The halftone mask is a mask having a semi-transmissive portion in which the exposure amount is partially controlled in the photomask of the photolithography process, and a layer having an intermediate film thickness is formed using the halftone mask. It becomes possible. The semi-transmissive portion of the halftone mask can be constructed by a film having an arbitrary transmittance, a slit, or the like.

Next, as shown in FIGS. 7A and 7B, wet etching is performed using the remaining black resin layer 24 as a mask. Thereby, the ITO layer 12 exposed to the openings 24h1 and 24h2 is removed, and the opening 24p1 exposing the colored insulating layer 15 and the opening 24p2 exposing the source wiring 34 and the gate insulating film 33 are formed. In this way, a separation portion of the pixel electrode 12 is formed.

Next, as shown in FIGS. 8A to 8C, the pixel electrode 12 in the pixel region is exposed by performing half ashing (dry etching). Thereby, a black matrix (light shielding layer) 24 is formed in a predetermined region. In the ashing of this embodiment, etching is performed by ashing a layer (resin layer) made of a resin material, for example, by plasma treatment or the like. Typically, the photoresist material is removed by plasma treatment or the like. A process. Alternatively, half ashing means ashing at a predetermined thickness (for example, half the thickness before etching) without etching the entire resin layer. I do not care.

According to the manufacturing method of the present embodiment, as described above, it is possible to manufacture the liquid crystal panel 100 capable of coloring without bleeding and having high color reproducibility. Further, as explained in the steps of FIGS. 6 and 7, the ITO layer 12 can be patterned by the wet etching process using the photoresist material (black matrix) 24 as a mask, so that the process can be simplified and the cost can be reduced. It becomes. In particular, in the conventional liquid crystal panel 2000 shown in FIG. 12, the number of photolithography processes increases, leading to an increase in manufacturing cost. However, according to the configuration of the present embodiment, the photolithography process is compared with that. Since the number of times can be reduced, a reduction in manufacturing cost (simplification of process and cost reduction) can be realized.

In the above-described embodiment, the first colored insulating layer 15 is the red insulating layer 15R, the second colored insulating layer 15 is the blue insulating layer 15B, and the third colored insulating layer 15 is the green insulating layer 15G. It is not limited to that. For example, the first colored insulating layer 15 may be the green insulating layer 15G or the blue insulating layer 15B. Further, the third colored insulating layer 15 may be the red insulating layer 15R or the blue insulating layer 15B instead of the green insulating layer 15G. Similarly, the second colored insulating layer 15 may be replaced with the red insulating layer 15R or the green insulating layer 15G instead of the blue insulating layer 15B. These changes / modifications are the same for the embodiments described later.

<Second Embodiment>
Next, a second embodiment of the present invention will be described with reference to FIGS. 9 (a) and 9 (b). FIG. 9A is a cross-sectional view of the channel portion showing the configuration of the liquid crystal panel 100 according to the second embodiment. FIG. 9B is a plan view showing the configuration of the liquid crystal panel 100 according to the second embodiment.

As shown in FIGS. 9A and 9B, in the liquid crystal panel 100 according to the present embodiment, below the opening (separation part) 24r that defines the shape of the transparent electrode (ITO layer) 12 is located. A metal layer (34st) made of a metal material constituting the wiring layer (34, 32 or 31) is disposed. In the illustrated example, a metal layer (source metal layer) 34 st constituted by the source wiring 34 is provided below the opening 24 r.

As shown in FIG. 9A, the opening 24r is formed in a form in which a part of the colored insulating layer 15 is removed by the etching process (half ashing process) shown in FIG. 8A. There is. In such a case, a color change occurs in the colored insulating layer 15 by removing a part of the colored insulating layer 15, but in this embodiment, the metal layer 34st is positioned below the opening 24r. By doing so, the portion can be shielded from light. Therefore, it is possible to obtain an effect that a color change region does not enter the eyes of the viewer.

In the illustrated example, the light shielding metal layer 34st is formed from the electrode material constituting the source wiring 34. However, the gate wiring 32 (or Cs wiring 31) corresponds to the position of the opening 24r and the process conditions. A light shielding metal layer may be provided below the opening 24r from the electrode material that constitutes the above.

<Third Embodiment>
Next, a third embodiment of the present invention will be described with reference to FIGS. 10 (a) and (b). 10A and 10B are process cross-sectional views of a channel portion illustrating a method for manufacturing the liquid crystal panel 100 according to the third embodiment.

The configuration of this embodiment is characterized in that ribs (24B) made of the same material as that of the black matrix 24 are formed on the surface of the portion corresponding to the pixel region in the pixel electrode 12. The rib 24B in this example has a pattern of vertical alignment ribs that defines the vertical alignment of liquid crystal molecules (see “420” in FIG. 11).

The process shown in FIG. 10A corresponds to the process shown in FIG. Here, in the process shown in FIG. 10A, the photolithography process is performed so that the convex portions 24A that define the ribs are formed in the portions of the black resin material 24 corresponding to the pixel regions. The convex portion 24A has a substantially hemispherical pattern in the pixel region so that the rib 24B remains as a result of performing the half ashing in FIG.

Then, as shown in FIG. 10 (b), by performing half ashing as in the above-described process, the pixel electrode 12 in the pixel region is exposed and the hemispherical rib 24B is left. According to the manufacturing method in the present embodiment, in the step of forming the black matrix 24, the ribs 24B can be formed on the transparent electrode 12 simultaneously with the formation of the black matrix 24. This simplifies the process and reduces costs.

As mentioned above, although the specific example of this invention was demonstrated referring drawings, these are only illustrations and do not limit a claim. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. For example, in the above embodiment, the color filter layer (color filter layer on the array substrate 10) composed of the three primary colors of the red insulating layer (15R), the blue insulating layer (15B), and the green insulating layer (15G) is shown. It is also possible to apply the technique of the present embodiment to a color filter layer composed of four primary colors with a yellow insulating layer (15Y) added thereto.

In the configuration shown in FIG. 10, the rib 24 is formed. However, in the case of a liquid crystal panel having an alignment film (photo-alignment film) using a photo-alignment method, excellent viewing characteristics are obtained without the rib. It is possible to achieve. Note that in the case of the method of defining the pretilt direction of the liquid crystal molecules using the photo-alignment method, the light irradiation step for defining the alignment direction is performed by light irradiation, so that it is a non-contact process, unlike the rubbing method. This has the advantage that the occurrence of the above does not occur.

According to the present invention, it is possible to simply provide a liquid crystal panel that can reduce the occurrence of color mixing due to light leakage.

10 Array substrate 12 Pixel electrode (ITO)
15 Colored insulating layer 15B Blue insulating layer 15G Green insulating layer 15R Red insulating layer 24 Black matrix (black resin layer)
24A Projection 24B Rib 31 Cs wiring 32 Gate wiring 33

Gate insulating film

34, 34s Source wiring 34d Drain wiring 34st Metal layer 35 Insulating film 36 Semiconductor layer 100 Liquid crystal panel

Claims

A method of manufacturing a liquid crystal panel,
Preparing an array substrate on which a thin film transistor is formed (a);
A photosensitive coloring including a red insulating layer made of a red coloring material, a blue insulating layer made of a blue coloring material, and a green insulating layer made of a green coloring material on the array substrate. A step (b) of forming an insulating layer;
A step (c) of forming a transparent electrode layer on the colored insulating layer;
Depositing a photosensitive black resin material on the transparent electrode layer (d);
An opening for exposing the transparent electrode layer is formed in the black resin material using a photolithography process, and halftone exposure is performed on a portion corresponding to a pixel region in the black resin material, and the black A step (e) of leaving a portion corresponding to the light-shielding portion in the resin material;
Removing the transparent electrode layer exposed in the opening (f);
A step (g) of removing a portion of the black resin material that has been subjected to the halftone exposure by half ashing the black resin material, thereby forming a black matrix from the black resin material. Manufacturing method.
The method of manufacturing a liquid crystal panel according to claim 1, wherein the step (f) is performed by wet etching using the black resin material as a mask.
In the array substrate,
Gate wiring and auxiliary capacitance wiring extending in the row direction;
A wiring layer including a source wiring extending in the column direction is formed,
3. The liquid crystal according to claim 1, wherein in the step (e), a metal layer made of a metal material constituting the wiring layer is disposed below the opening where the transparent electrode layer is exposed. Panel manufacturing method.
In the step (e), the photolithography step is performed so that convex portions defining ribs are formed in portions corresponding to the pixel regions in the black resin material,
The manufacturing method of the liquid crystal panel as described in any one of Claim 1 to 3 which forms the rib which consists of the said black resin material on the said transparent electrode layer by the said half ashing in the said process (g).
An array substrate on which a thin film transistor is formed;
A colored insulating layer formed on the array substrate and including a red insulating layer made of a red colored material, a blue insulating layer made of a blue colored material, and a green insulating layer made of a green colored material; ,
A pixel electrode formed on the colored insulating layer;
A black matrix formed on the pixel electrode so as to cover the thin film transistor;
The pixel electrode is separated at a position that divides a pixel region in the array substrate,
A part of the colored insulating layer exposed in the portion where the pixel electrode is separated is removed,
In the array substrate,
Gate wiring and auxiliary capacitance wiring extending in the row direction;
A wiring layer including a source wiring extending in the column direction is formed,
A liquid crystal panel, wherein a metal layer made of a metal material constituting the wiring layer is disposed below a region where a part of the colored insulating layer is removed.
An array substrate on which a thin film transistor is formed;
A colored insulating layer formed on the array substrate and including a red insulating layer made of a red colored material, a blue insulating layer made of a blue colored material, and a green insulating layer made of a green colored material; ,
A pixel electrode formed on the colored insulating layer;
A black matrix formed on the pixel electrode so as to cover the thin film transistor;
A liquid crystal panel, wherein a rib made of the same material as that of the black matrix is formed on a surface of a portion corresponding to a pixel region in the pixel electrode.