WO2013019029A1 - Cellule solaire et procédé de fabrication de cette dernière - Google Patents

Cellule solaire et procédé de fabrication de cette dernière Download PDF

Info

Publication number
WO2013019029A1
WO2013019029A1 PCT/KR2012/005992 KR2012005992W WO2013019029A1 WO 2013019029 A1 WO2013019029 A1 WO 2013019029A1 KR 2012005992 W KR2012005992 W KR 2012005992W WO 2013019029 A1 WO2013019029 A1 WO 2013019029A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
solar cell
optical path
path converting
protrusion pattern
Prior art date
Application number
PCT/KR2012/005992
Other languages
English (en)
Inventor
Se Han Kwon
Chul Hwan Choi
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Priority to EP12820573.9A priority Critical patent/EP2737549A4/fr
Priority to CN201280047399.8A priority patent/CN103843156A/zh
Publication of WO2013019029A1 publication Critical patent/WO2013019029A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the embodiment relates to a solar cell and a method of fabricating the same.
  • a CIGS-based solar cell which is a PN hetero junction apparatus having a substrate structure including a glass substrate, a metallic back electrode layer, a P type CIGS-based light absorbing layer, a high resistance buffer layer, and an N type window layer, has been extensively used.
  • the embodiment provides a solar cell which may be easily fabricated and have improved photoelectric conversion efficiency.
  • a solar cell including a back electrode layer on a support substrate; an optical path converting layer on the back electrode layer, the optical path converting layer including a protrusion pattern; a light absorbing layer on the optical path converting layer; and a front electrode layer on the light absorbing layer.
  • a method for fabricating a solar cell includes the steps of: forming a back electrode layer on a support substrate; forming an optical path converting layer on the back electrode layer and forming a protrusion pattern by etching the optical path converting layer; forming a light absorbing layer including the protrusion pattern on the optical path converting layer; and forming a front electrode layer on the light absorbing layer.
  • the solar cell according to the embodiment includes an optical path converting layer which includes a protrusion pattern and is disposed on the back electrode layer.
  • the optical path converting layer including the protrusion pattern reflects a light, which is transmitted without being absorbed in the light absorbing layer, toward the light absorbing layer, so that a light absorption rate of the light absorbing layer may be increased.
  • the solar cell according to the embodiment may have improved efficiency.
  • the light absorption rate of the light absorbing layer may be increased.
  • the efficiency of the solar cell can be improved even if the light absorbing layer has a thin thickness.
  • the solar cell according to the embodiment can be fabricated by using the light absorbing layer having the thin thickness, so that a thin film solar cell having a thickness in the range of several nm to several hundreds of nm may be provided.
  • the thickness of the light absorbing layer may be reduced due to the protrusion pattern, so that the raw material cost may be reduce and the productivity may be improved.
  • the solar cell may have good physical and chemical interfacial characteristics between the optical path converting layer and the light absorbing layer.
  • the optical path converting layer may include a group V element.
  • the interfacial characteristic of the optical path converting layer with respect to the light absorbing layer may be more improved.
  • FIG. 1 is a sectional view showing a solar cell according to the embodiment
  • FIG. 2 is a transparent perspective view showing the solar cell according to the embodiment
  • FIG. 3 is a sectional view of a protrusion included in an optical path converting layer according to the embodiment
  • FIG. 4 is a sectional view showing a solar cell according to another embodiment
  • FIG. 5 is a sectional view illustrating a process of converting an optical path of an incident light by the optical path converting layer according to the embodiment.
  • FIGS. 6 to 12 are views illustrating a process of fabricating a solar cell according to the embodiment.
  • FIGS. 1 and 4 are sectional views showing a solar cell according to the embodiment.
  • FIG. 2 is a transparent perspective view showing the solar cell of FIG. 1.
  • FIG. 3 is a sectional view of a protrusion included in an optical path converting layer according to the embodiment.
  • FIG. 5 is a sectional view illustrating a process of converting an optical path of an incident light by the optical path converting layer according to the embodiment.
  • the solar cell according to the embodiment includes a back electrode layer 200 which is formed on a support substrate 100, an optical path converting layer 300 which includes a protrusion pattern and is disposed on the back electrode layer 200, a light absorbing layer 400 which is disposed on the optical path converting layer 300, a buffer layer 500 on the light absorbing layer 400, a high-resistance buffer layer 600 on the buffer layer 500, and a front electrode layer 700 on the high-resistance buffer layer 600.
  • the support substrate 100 has a plate shape and supports the back electrode layer 200, the optical path converting layer 300, the light absorbing layer 400, the buffer layer 500, the high-resistance buffer layer 600 and the front electrode layer 700.
  • the support substrate 100 may be an insulator.
  • the support substrate 100 may be a glass substrate, a plastic substrate or a metal substrate.
  • the support substrate 100 may be a soda lime glass substrate.
  • the support substrate 100 may be transparent. Further, the support substrate 100 may be rigid or flexible.
  • the back electrode layer 200 is disposed on the support substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • a material used for the back electrode layer 200 is metal such as molybdenum (Mo).
  • the back electrode layer 200 may include two layers or more.
  • the layers may be formed of the same material or different materials, respectively.
  • the optical path converting layer 300 is disposed on the back electrode layer 200.
  • the optical path converting layer 300 includes the protrusion pattern 320.
  • the optical path converting layer 300 includes a compound selected from the group consisting of zinc oxide, indium tin oxide (ITO), tin oxide and a combination thereof.
  • the optical path converting layer 300 may be zinc oxide.
  • optical path converting layer 300 may be transparent.
  • the optical path converting layer 300 may have a thickness in the range of 10 nm to 100 nm.
  • the optical path converting layer 300 may include a material selected from the group consisting of a group V element, a transition metal element, alkali metal and a combination thereof.
  • the optical path converting layer 300 may be doped with a dopant selected from the group consisting of a group V element, a transition metal element, alkali metal and a combination thereof.
  • the optical path converting layer 300 may be doped with a compound consisting of a group V element, a transition metal element, alkali metal and a combination thereof. That is, the optical path converting layer 300 may be doped with at least two doping materials.
  • the dopant concentration is in a range of 1.0 ⁇ 1016 atoms/cm3 to 1.0 ⁇ 1019 atoms/cm3, but the embodiment is not limited thereto.
  • the group V element may include one selected from the group consisting of nitrogen, phosphor, arsenic and a combination thereof, but the embodiment is not limited thereto.
  • the transition metal element includes one selected from the group consisting of vanadium (V), chrome (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu) and a combination thereof, but the embodiment is not limited thereto.
  • the alkali metal may include one selected from the group consisting of lithium (Li), potassium (K), rubidium (Rb), cesium (Cs), francium (Fr) and a combination thereof, but the embodiment is not limited thereto.
  • the protrusion pattern 320 may have various shapes to the extent that the protrusion pattern 320 has a shape including an inclined surface inclined with respect to the support substrate 100. Further, as shown in FIG, 1, although the protrusion pattern 320 has a regular interval, the shape of the protrusion pattern 320 is not limited thereto, and the protrusion pattern 320 may include protrusions which have various sizes and are spaced apart from each other at irregular intervals.
  • the protrusion pattern 320 may have a pyramid shape, a hemisphere shape, or a triangular prism shape.
  • the protrusion pattern 320 may have a pyramid shape.
  • the protrusion pattern 320 may include the first and second inclined surfaces 321 and 322 which are opposite to each other.
  • the first inclined surfaces 321 are directed in the first direction.
  • the first inclined surfaces 321 may extend in the same direction.
  • the first inclined surfaces 321 are inclined with respect to an upper surface of the back electrode layer 200.
  • the second inclined surfaces 322 may extend in the same direction.
  • the second inclined surfaces 322 may be opposite to the first inclined surfaces 321.
  • the second inclined surfaces 322 may be symmetrical to the first inclined surfaces 321.
  • Gradients ( ⁇ 1, ⁇ 2) of the first and second inclined surfaces about the back electrode layer 200 may be in the range of about 10 degrees to about 90 degrees.
  • the gradients ( ⁇ 1, ⁇ 2) of the first and second inclined surfaces may be in the range of about 30 degrees to about 55 degrees.
  • the gradient of the first inclined surface may be equal to or different from the gradient of the second inclined surface.
  • the optical path converting layer 300 may include a base layer 310 disposed on the back electrode layer 100 and the protrusion pattern 320 on the base layer 310. That is, as shown in FIGS. 1 and 2, the optical path converting layer 300 may be formed only with the protrusion pattern 320, or, as shown in FIGS. 3 and 4, may have the base layer 310 and the protrusion pattern 320 on the base layer 310.
  • the base layer 310 is prepared as a thin film.
  • the protrusion pattern 320 on the base layer 310 may have a height in the range of 30 nm to 100 nm.
  • the surface area of the optical path converting layer 300 may be expanded due to the protrusion pattern 320 and may scatter an incident light.
  • the protrusion pattern 320 may reflect the light incident from the top of the optical path converting layer 300 in several directions.
  • the light incident into an upper surface of the back electrode layer 200 through the light absorbing layer 400 is scattered by the protrusion pattern 320.
  • the light incident from the top to the bottom is laterally reflected by the protrusion pattern 320 placed over the upper surface of the back electrode layer 200.
  • the optical path of the reflected light in the light absorbing layer 400 can be increased.
  • the optical path of the light passing through the light absorbing layer 400 can be increased, so that the photoelectric conversion efficiency may be improved.
  • the solar cell due to the optical path converting layer 300 including the protrusion pattern 320, the solar cell may have the improved efficiency even if the light absorbing layer 400 has a thin thickness.
  • the solar cell according to the embodiment can be fabricated by using the light absorbing layer 400 having the thinner thickness, so that a thin film solar cell having a thickness in the range of several nm to several hundreds of nm may be provided.
  • the upper surface of the optical path converting layer 300 may represent high roughness. That is, the optical path converting layer 300 may be fully formed with the protrusion pattern 320, or a concavo-convex section such as the protrusion pattern 320 is formed on the upper surface of the base layer 200.
  • the upper surface of the back electrode has a large surface area. Therefore, the back electrode layer 200 and the light absorbing layer 400 have a large contact area. Accordingly, the back electrode layer 200 and the light absorbing layer 400 have improved physical and electrical contact characteristics.
  • the light absorbing layer 400 is disposed on the optical path converting layer 300.
  • the optical path converting layer 300 is coated around the back electrode layer 200 and the light absorbing layer 300.
  • the light absorbing layer 400 includes a group I-III-VI compound.
  • the light absorbing layer 400 may have a CIGSS (Cu(IN,Ga)(Se,S)2) crystal structure, a CISS (Cu(IN)(Se,S)2) crystal structure or a CGSS (Cu(Ga)(Se,S)2) crystal structure.
  • the energy band gap of the light absorbing layer 400 may be in the range of about 1 eV to about 1.8 eV.
  • the buffer layer 500 is disposed on the light absorbing layer 400.
  • the buffer layer 500 directly makes contact with the light absorbing layer 400.
  • cadmium sulfide (CdS) is used as a material of the buffer layer 500.
  • the energy band gap of the buffer layer 500 is in the range of about 1.9 eV to about 2.3 eV.
  • the high resistance buffer layer 600 is disposed on the buffer layer 500.
  • the high resistance buffer layer 600 includes i-ZnO that is not doped with impurities.
  • the energy band gap of the high resistance buffer layer 600 may be in the range of about 3.1 eV to about 3.3 eV.
  • the front electrode layer 700 is disposed on the high resistance buffer layer 600.
  • the front electrode layer 700 is a transparent and conductive layer.
  • a material such as Al doped zinc oxide (Al doped ZnO;AZO) may be used for the front electrode layer 700.
  • FIGS. 6 to 12 are views illustrating a process of fabricating a solar cell according to the embodiment. The fabrication method will be described with reference to the solar cell described above. The description about the solar cell may be basically incorporated herein by reference.
  • the back electrode layer 200 is formed by depositing a metal such as molybdenum (Mo) on the support substrate 100 through a sputtering process.
  • the back electrode layer 200 may be formed by performing processes twice under different conditions.
  • the optical path converting layer 300 is formed on the back electrode layer 200 and is etched, such that the protrusion pattern 320 is formed.
  • the protrusion pattern 320 may be formed by wet-etching or dry-etching the optical path converting layer 300.
  • an etching solution generally used in the art such as a hydrochloric acid or a nitric acid, is used.
  • the optical path converting layer 300 disposed on the back electrode layer 200 is dipped into an solution including a hydrochloric acid (HCl) by a predetermined % and is reacted for several seconds to several hours, such that the optical path converting layer 300 may be etched.
  • HCl hydrochloric acid
  • the etching degree of the optical path converting layer 300 may be controlled according to the conditions of the etching process such as acidity of the etching solution, concentration of the etching solution, reaction time, reaction temperature, etc.
  • the etching process is performed under the condition that may sufficiently etch the optical path converting layer 300, as shown in FIG. 1, the optical path converting layer 300 is entirely converted into the protrusion pattern 320.
  • the entire upper surface of the optical path converting layer 300 may not be uniformly etched. That is, the optical path converting layer 300 may be selectively etched naturally. For example, one part of the optical path converting layer 300 is etched too much and the other part is insufficiently etched, such that the optical path converting layer 300 may have the inclined surface inclined with respect to the support substrate 100.
  • the upper surface of the optical path converting layer 300 is partially etched, such that the protrusion pattern 320 is formed and the optical path converting layer 300, which comes into contact with the back electrode layer 200, may remain in a thin film shape.
  • the light absorbing layer 400 is formed on the back electrode layer 200 and the optical path converting layer 300.
  • the light absorbing layer 400 may be formed through a sputtering process or an evaporation process.
  • Cu, In, Ga and Se are simultaneously or independently evaporated to form the CIGS-based light absorbing layer, or the light absorbing layer can be formed through the selenization process after forming a metal precursor layer.
  • the metal precursor layer is formed on the back electrode layer 200 by performing the sputtering process using a Cu target, an In target, and a Ga target.
  • the selenization process is performed to form the CIGS-based light absorbing layer.
  • the sputtering process using the Cu target, the In target, and the Ga target and the selenization process can be simultaneously performed.
  • the CIS-based or CIG-based light absorbing layer 400 can be formed through the selenization process and the sputtering process using only the Cu and In targets or the Cu and Ga targets.
  • the buffer layer 500 and the high resistance buffer layer 600 are formed on the light absorbing layer 400.
  • the buffer layer 500 may be formed through a CBD (Chemical Bath Deposition) process.
  • CBD Chemical Bath Deposition
  • the light absorbing layer 400 is immersed in a solution including materials for forming cadmium sulfide, such that the buffer layer 500 including the cadmium sulfide is formed on the light absorbing layer 400.
  • i-ZnO that is not doped with impurities is deposited on the buffer layer 500 through the sputtering process and then the high resistance buffer layer 600 is formed.
  • the front electrode layer 700 is formed on the high resistance buffer layer 600.
  • transparent conductive materials are laminated on the high resistance buffer layer 700.
  • transparent conductive materials include zinc oxide doped with aluminum, indium zinc oxide or indium tin oxide (ITO).
  • the solar cell having improved efficiency can be fabricated.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention se rapporte à une cellule solaire et à un procédé de fabrication de cette dernière. La cellule solaire comprend une couche d'électrode arrière sur un substrat de support ; une couche de conversion de trajet optique agencée sur la couche d'électrode arrière, la couche de conversion de trajet optique comprenant un motif en saillie ; une couche d'absorption de lumière agencée sur la couche de conversion de trajet optique ; et une couche d'électrode avant agencée sur la couche d'absorption de lumière. La couche de conversion de trajet optique réfléchit une lumière incidente vers la couche d'absorption de lumière de telle sorte que la lumière soit améliorée efficacement.
PCT/KR2012/005992 2011-07-29 2012-07-26 Cellule solaire et procédé de fabrication de cette dernière WO2013019029A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP12820573.9A EP2737549A4 (fr) 2011-07-29 2012-07-26 Cellule solaire et procédé de fabrication de cette dernière
CN201280047399.8A CN103843156A (zh) 2011-07-29 2012-07-26 太阳能电池及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110076275A KR101305802B1 (ko) 2011-07-29 2011-07-29 태양전지 및 이의 제조방법
KR10-2011-0076275 2011-07-29

Publications (1)

Publication Number Publication Date
WO2013019029A1 true WO2013019029A1 (fr) 2013-02-07

Family

ID=47629484

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005992 WO2013019029A1 (fr) 2011-07-29 2012-07-26 Cellule solaire et procédé de fabrication de cette dernière

Country Status (4)

Country Link
EP (1) EP2737549A4 (fr)
KR (1) KR101305802B1 (fr)
CN (1) CN103843156A (fr)
WO (1) WO2013019029A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108649080A (zh) * 2018-07-19 2018-10-12 北京铂阳顶荣光伏科技有限公司 一种太阳能电池及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105071758A (zh) * 2015-09-02 2015-11-18 广西广拓新能源科技有限公司 可转向太阳能光板
CN106935668A (zh) * 2015-12-30 2017-07-07 中国建材国际工程集团有限公司 包含图案化金属功能层的透明导电层堆叠及其制造方法
CN109962122A (zh) * 2017-12-22 2019-07-02 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021479A (ja) * 2007-07-13 2009-01-29 Omron Corp Ｃｉｓ系太陽電池及びその製造方法
JP2009267222A (ja) * 2008-04-28 2009-11-12 Kaneka Corp 薄膜光電変換装置用透明導電膜付き基板の製造方法
KR20100136762A (ko) * 2009-06-19 2010-12-29 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20110014039A (ko) * 2009-08-04 2011-02-10 엘지디스플레이 주식회사 태양전지 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US5998730A (en) * 1997-05-13 1999-12-07 Canon Kabushiki Kaisha Production method for deposited film, production method for photoelectric conversion element, production apparatus for deposited film, production apparatus for photoelectric conversion element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021479A (ja) * 2007-07-13 2009-01-29 Omron Corp Ｃｉｓ系太陽電池及びその製造方法
JP2009267222A (ja) * 2008-04-28 2009-11-12 Kaneka Corp 薄膜光電変換装置用透明導電膜付き基板の製造方法
KR20100136762A (ko) * 2009-06-19 2010-12-29 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20110014039A (ko) * 2009-08-04 2011-02-10 엘지디스플레이 주식회사 태양전지 및 그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2737549A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108649080A (zh) * 2018-07-19 2018-10-12 北京铂阳顶荣光伏科技有限公司 一种太阳能电池及其制备方法

Also Published As

Publication number Publication date
EP2737549A4 (fr) 2015-04-08
CN103843156A (zh) 2014-06-04
KR101305802B1 (ko) 2013-09-06
KR20130014265A (ko) 2013-02-07
EP2737549A1 (fr) 2014-06-04

Similar Documents

Publication Publication Date Title
WO2012102451A1 (fr) Cellule solaire et procédé de fabrication de cette dernière
WO2012102470A1 (fr) Appareil à pile solaire et son procédé de fabrication
WO2011043609A2 (fr) Appareil photovoltaïque de génération d'électricité et procédé pour sa fabrication
WO2013019029A1 (fr) Cellule solaire et procédé de fabrication de cette dernière
WO2013069998A1 (fr) Cellule solaire et son procédé de fabrication
WO2012138194A2 (fr) Cellule solaire et son procédé de fabrication
WO2013151313A1 (fr) Appareil à cellules solaires et son procédé de fabrication
WO2013069997A1 (fr) Cellule solaire et son procédé de fabrication
WO2012102449A1 (fr) Cellule solaire, et procédé de fabrication associé
WO2012102453A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2012046932A1 (fr) Cellule solaire et son procédé de fabrication
WO2013055005A1 (fr) Cellule solaire et son procédé de préparation
WO2013058611A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2012102452A1 (fr) Cellule solaire et procédé de fabrication
WO2013094937A1 (fr) Appareil à cellules solaires et son procédé de fabrication
WO2013081344A1 (fr) Module de cellules solaires et son procédé de fabrication
WO2013019028A2 (fr) Cellule solaire et procédé de fabrication associé
WO2012102533A2 (fr) Cellule solaire et procédé de fabrication de cette dernière
WO2012102469A2 (fr) Cellule solaire et son procédé de fabrication
WO2013094940A1 (fr) Module de cellules solaires et son procédé de fabrication
WO2013042942A1 (fr) Cellule solaire et son procédé de fabrication
WO2013019000A2 (fr) Cellule solaire et module de cellule solaire qui utilise cette dernière
WO2012138117A2 (fr) Cellule solaire et son procédé de fabrication
WO2013094936A1 (fr) Cellule solaire et son procédé de fabrication
WO2012102450A1 (fr) Cellule solaire et procédé de fabrication de cette dernière

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12820573

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2012820573

Country of ref document: EP