WO2013018524A1 - Photosensitive resin composition, material for forming relief pattern, photosensitive film, polyimide film, cured relief pattern and method for producing same, and semiconductor device - Google Patents

Photosensitive resin composition, material for forming relief pattern, photosensitive film, polyimide film, cured relief pattern and method for producing same, and semiconductor device Download PDF

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Publication number
WO2013018524A1
WO2013018524A1 PCT/JP2012/067852 JP2012067852W WO2013018524A1 WO 2013018524 A1 WO2013018524 A1 WO 2013018524A1 JP 2012067852 W JP2012067852 W JP 2012067852W WO 2013018524 A1 WO2013018524 A1 WO 2013018524A1
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Prior art keywords
group
general formula
acid
resin composition
added
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PCT/JP2012/067852
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French (fr)
Japanese (ja)
Inventor
和田 健二
恭平 荒山
雨宮 拓馬
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富士フイルム株式会社
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Priority to CN201280037948.3A priority Critical patent/CN103718109B/en
Priority to KR1020147002626A priority patent/KR101780663B1/en
Publication of WO2013018524A1 publication Critical patent/WO2013018524A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention uses a positive type high heat resistant photosensitive resin composition used as a surface protective film for semiconductor devices, an interlayer insulating film, an interlayer insulating film for display devices, and the positive type high heat resistant photosensitive resin composition.
  • the present invention relates to a method for producing a cured relief pattern having heat resistance and a semiconductor device containing the relief pattern.
  • a negative polyimide resin having excellent heat resistance, electrical characteristics, mechanical characteristics, and the like is used for a surface protective film and an interlayer insulating film of a semiconductor device.
  • This negative polyimide resin is generally provided in the form of a photosensitive polyimide precursor composition, and is applied on a semiconductor device by coating, patterning with actinic rays, organic solvent development, thermal imidization treatment at high temperature, and the like.
  • a surface protective film, an interlayer insulating film, and the like can be easily formed, and the process can be greatly shortened as compared with a conventional non-photosensitive polyimide precursor composition.
  • the photosensitive negative polyimide precursor composition needs to use a large amount of an organic solvent such as N-methyl-2-pyrrolidone as a developing solution in the development process. Measures to remove organic solvents have been demanded. In response, recently, various heat-resistant photosensitive resin materials that can be developed with an alkaline aqueous solution have been proposed in the same manner as photoresists.
  • an organic solvent such as N-methyl-2-pyrrolidone
  • a composition in which an alkaline aqueous solution-soluble polyamic acid (polyimide precursor) or hydroxypolyamide (polybenzoxazole) precursor is mixed with a photoactive component such as a photosensitive diazoquinone compound is used as a positive photosensitive resin composition.
  • the method has attracted attention in recent years.
  • the development mechanism of this positive photosensitive resin is that the photosensitive diazoquinone compound in the unexposed area is insoluble in the alkaline aqueous solution, but when exposed, the photosensitive diazoquinone compound undergoes a chemical change to become an indenecarboxylic acid compound. It makes use of being soluble in an alkaline aqueous solution.
  • wafer warpage the problem of warpage of silicon wafers formed with a polyimide film (hereinafter also simply referred to as “wafer warpage”) has become apparent. This is thought to be due to the residual stress generated from the difference in thermal expansion coefficient between the polyimide and silicon wafer. Therefore, a low thermal expansion and low stress (low stress) polyimide is strongly demanded compared to conventional polyimide ( For example, refer nonpatent literature 1).
  • Patent Document 6 is a positive photosensitive composition containing a compound that generates an acid upon irradiation and a PBO precursor, and the residual stress of the polybenzoxazole film formed by the PBO precursor is 25 MPa or less.
  • a positive photosensitive composition containing a certain PBO precursor is disclosed, there are various problems in lithography performance such as sensitivity and profile.
  • Japanese Unexamined Patent Publication No. 56-27140 Japanese Laid-Open Patent Publication No. 2002-526793 Japanese Unexamined Patent Publication No. 2009-244479 Japanese Unexamined Patent Publication No. 2009-192760 Japanese Laid-Open Patent Publication No. 2006-010881 Japanese Laid-Open Patent Publication No. 2001-214055
  • the present invention has lithography performance with excellent resolution and sensitivity, and cures at a low temperature of 300 ° C. or lower (preferably 250 ° C. or lower), that is, curing at a low temperature to prevent wafer warpage due to low stress.
  • a photosensitive resin composition capable of forming a relief pattern, a relief pattern forming material, a photosensitive film, a polyimide film, a cured relief pattern, a production method thereof, and the cured relief pattern using the photosensitive resin composition
  • An object is to provide a semiconductor device.
  • a photosensitive resin composition comprising a resin having a repeating unit represented by the following general formula (1), and (b) a compound that generates an acid upon irradiation with actinic rays or radiation.
  • R 1 represents a tetravalent organic group.
  • R ⁇ 1 > may mutually be same or different.
  • R 2 represents a divalent organic group.
  • a plurality of R 2 may being the same or different.
  • at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
  • R 3 each independently represents a hydrogen atom or an organic group.
  • at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • R 1 ' has the same meaning as R 1 in the general formula (1).
  • R 3 ' has the same meaning as R 3 in Formula (1).
  • at least one of the plurality of —CO 2 R 3 ′ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • R 4 is a divalent organic group having an alicyclic group.
  • R 1 "has the same meaning as R 1 in the general formula (1).
  • R 3 has the same meaning as R 3 in Formula (1).
  • at least one of the plurality of —CO 2 R 3 ′′ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • R 5 is a divalent organic group different from R 4 .
  • R 5 in the general formula (3) is a divalent group represented by any of the following formulas.
  • At least one hydrogen atom of each aromatic ring is independently selected from the group consisting of fluorine atom, chlorine atom, bromine atom, methyl group, methoxy group, cyano group, phenyl group and trifluoromethyl group. It may be substituted by a species atom or group.
  • the thermal decomposition temperature of —CO 2 R 3 in the general formula (1), —CO 2 R 3 ′ in the general formula (2) or —CO 2 R 3 ′′ in the general formula (3) is 100 to 220 ° C.
  • the photosensitive resin composition according to any one of [1] to [4].
  • Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
  • Rb represents a single bond or a divalent linking group.
  • Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom. At least two of Ra, Rb and Q may be bonded to each other to form a ring.
  • Rc, Rd, Re, Rf and Rg each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group or a halogen atom.
  • Rc and Rd may be bonded to each other to form a ring, or at least two of Re, Rf and Rg may be bonded to each other to form a ring.
  • At least one of Rc and Rd is a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom. 7].
  • the photosensitive resin composition as described in 7].
  • [19] [1] A photosensitive film formed of the photosensitive resin composition according to any one of [16]. [20] [1] A polyimide film obtained by heat-treating the photosensitive resin composition according to any one of [16]. [21] (A) forming a photosensitive film according to [19] on a substrate; (A) a step of exposing the photosensitive film with actinic rays or radiation; (C) A process for developing the photosensitive film so as to remove the exposed portion with an aqueous alkaline developer, and (d) a method for producing a cured relief pattern comprising a step of heat-treating the obtained relief pattern. [22] A cured relief pattern obtained by the production method according to [21]. [23] [22] A semiconductor device comprising the cured relief pattern according to [22]. [24] Resin which has a repeating unit represented by following General formula (1).
  • R 1 represents a tetravalent organic group.
  • R ⁇ 1 > may mutually be same or different.
  • R 2 represents a divalent organic group.
  • a plurality of R 2 may being the same or different.
  • at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
  • R 3 each independently represents a hydrogen atom or an organic group.
  • at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • the photosensitive resin composition of the present invention has lithography performance with excellent resolution and sensitivity, and can form a cured relief pattern that prevents wafer warpage due to low stress in so-called low-temperature curing.
  • a relief pattern forming material having lithography performance with excellent resolution and sensitivity, excellent low stress characteristics in so-called low temperature cure, and capable of forming a cured relief pattern that prevents wafer warpage,
  • a photosensitive film, a polyimide film, a cured relief pattern, a manufacturing method thereof, and a semiconductor device including the cured relief pattern can be provided.
  • the notation which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent.
  • the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • “active light” or “radiation” means, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays represented by excimer laser, extreme ultraviolet rays (EUV light), X-rays, electron beams (EB), etc. To do. In the present invention, light means actinic rays or radiation.
  • exposure in the present specification is not limited to exposure to far ultraviolet rays, extreme ultraviolet rays, X-rays, EUV light and the like represented by mercury lamps and excimer lasers, but also electron beams, ion beams, etc., unless otherwise specified.
  • the exposure with the particle beam is also included in the exposure.
  • the photosensitive resin composition of the present invention contains (a) a resin having a repeating unit represented by the following general formula (1), and (b) a compound that generates an acid upon irradiation with actinic rays or radiation.
  • R 1 represents a tetravalent organic group.
  • R ⁇ 1 > may mutually be same or different.
  • R 2 represents a divalent organic group.
  • a plurality of R 2 may being the same or different.
  • at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
  • R 3 each independently represents a hydrogen atom or an organic group.
  • at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • the photosensitive resin composition of the present invention containing the resin (a) having a repeating unit represented by the general formula (1) has lithography performance with excellent resolution and sensitivity. In so-called low temperature curing, The reason why it is possible to form a cured relief pattern that prevents wafer warpage due to low stress is not clear, but is estimated as follows.
  • the repeating unit represented by the general formula (1) can form a linear and rigid polyimide by thermosetting, and at least one of a plurality of R 2 present in the resin (a) is a fat. Linearity and rigidity can be improved by using a divalent organic group having a cyclic group. Thereby, it is presumed that the thermal expansibility can be particularly lowered, low stress can be achieved, and wafer warpage can be prevented.
  • R 2 present in the resin (a) is a divalent organic group having an alicyclic group, the light transmission property such as i-line at the time of exposure is not impaired and the resolution is improved. It is estimated that the lithography performance with excellent sensitivity is achieved.
  • the resin (a) having a repeating unit represented by the general formula (1) is a resin whose solubility in an alkaline developer is increased by the action of an acid.
  • the resin having the repeating unit of the general formula (1) is preferably insoluble or hardly soluble in an alkali developer.
  • the repeating unit represented by the general formula (1) includes a compound having four carboxyl groups with R 1 as a nucleus, a carboxylic acid anhydride thereof, or a hydrogen atom in at least one of the four carboxyl groups. It is composed of an acid component derived from a compound substituted with a group capable of leaving by the action of an acid and a diamine component derived from a compound having two amino groups with R 2 as a nucleus.
  • the tetravalent organic group R 1 preferably has 4 to 30 carbon atoms, and more preferably a tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group. .
  • a plurality of R 1 present in the resin (a) may be the same or different.
  • Examples of the monocyclic aromatic group in the tetravalent organic group R 1 include a benzene ring group and a pyridine ring group.
  • Examples of the condensed polycyclic aromatic group in the tetravalent organic group R 1 include a naphthalene ring group and a perylene ring group.
  • Examples of the monocyclic aliphatic group in the tetravalent organic group R 1 include a cyclobutane ring group, a cyclopentane ring group, and a cyclohexane ring group.
  • Examples of the condensed polycyclic aliphatic group in the tetravalent organic group R 1 include a bicyclo [2.2.1] heptane ring group, a bicyclo [2.2.2] octane ring group, and a bicyclo [2.2. 2] Oct-7-ene ring group and the like.
  • the tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group for the tetravalent organic group R 1 the above-mentioned monocyclic or condensed polycyclic aliphatic group or The aromatic group itself may be used, but a plurality of monocyclic or condensed polycyclic aliphatic groups or aromatic groups are linked via a single bond or a divalent linking group, and 4 as R 1 A valent linking group may be formed.
  • the divalent linking group is preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, such as a methylene group, an ethylene group, or a propylene group), an oxygen atom, a sulfur atom, a divalent sulfone group, or an ester bond. , Ketone group, amide group and the like.
  • the acid component having a group derived from at least four carboxyl groups with R 1 as a nucleus include pyromellitic acid anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride, 2, 3,3 ′, 4′-biphenyltetracarboxylic anhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic anhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic anhydride, 2 , 2 ′, 3,3′-benzophenonetetracarboxylic anhydride, 4,4′- (Hexafluoroisopropylidene) diphthalic anhydride, 1,2,5,6-naphthalenetetracarboxylic anhydride, 2,3,6,7-naphthalenetetracarboxylic anhydride, 2,3,5,6- Pyridinetetracarboxylic anhydride, 3,4,9,
  • a component derived from pyromellitic acid anhydride a component derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic acid anhydride
  • the content of the acid component derived from the compound having four carboxyl groups with R 1 as a nucleus in the resin (a) is 20 to 70 mol% with respect to all repeating units constituting the resin (a). It is preferably 30 to 60% by mole.
  • Examples of the divalent organic group R 2 include a divalent group having an alicyclic group, a divalent group having an aromatic group, and a divalent group containing a silicon atom.
  • a plurality of R 2 present in the resin (a) may be the same or different.
  • R 2 is a divalent group having an alicyclic group
  • the diamine component having R 2 as a nucleus is sometimes referred to as an alicyclic diamine component
  • R 2 is a divalent group having an aromatic group.
  • the diamine component of R 2 to the core of, sometimes called the aromatic diamine component the diamine component of the R 2 at the core when the divalent group R 2 contains a silicon atom, that silicon diamine There is also.
  • At least one of R 2 in the diamine component present in the resin (a) is a divalent group having an alicyclic group.
  • the alicyclic group that R 2 may have is preferably a divalent alicyclic group having 3 to 20 carbon atoms, such as a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or bicyclo [2.2.
  • Polycyclic cycloalkylene groups such as a heptylene group, norbornylene group, tetracyclodecanylene group, tetracyclododecanylene group, adamantylene group, and the like can be given.
  • the divalent group having an alicyclic group for R 2 may be the alicyclic group itself, but a plurality of alicyclic groups are preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, for example, Methylene group, ethylene group, propylene group, etc.) may be linked to form a divalent group having an alicyclic group as R 2 , and the amino group and alicyclic group in the diamine component are alkylene groups.
  • the alicyclic group and alkylene group that can form a divalent group having an alicyclic group may have a substituent, and an alkyl group (preferably an alkyl group having 1 to 4 carbon atoms) as such a substituent. ), Halogen atoms and the like.
  • Particularly preferred diamine components having an alicyclic structure having R 2 as a nucleus include a 5-amino-1,3,3-trimethylcyclohexanemethylamine component, a cis-1,4-cyclohexanediamine component, and trans-1,4- Cyclohexanediamine component, 1,4-cyclohexanediamine component (cis, trans mixture), 4,4′-methylenebis (cyclohexylamine) component and its 3,3′-dimethyl-substituted product, bis (aminomethyl) bicyclo [2.2 .1] heptane component, 1,3-diaminoadamantane component, 3,3′-diamino-1,1′-biadamantyl component, 4,4′-hexafluoroisopropylidenebis (cyclohexylamine) component, Of which 3,3′-diamino-1,1′-biadamantyl component, trans-1,4-cyclo From the viewpoint of he
  • the content of the alicyclic diamine component having two amino groups with R 2 as a nucleus in the resin (a) is 20 to 70 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 30 to 60 mol%.
  • the aromatic group in the divalent group having an aromatic group for R 2 is preferably an aromatic group having 5 to 16 carbon atoms, and examples thereof include a phenylene group and a naphthylene group. Further, the aromatic group may contain a hetero atom such as a nitrogen atom or an oxygen atom, and examples thereof include a divalent benzoxazole group.
  • the divalent group having an aromatic group for R 2 may be the aromatic group itself, but a plurality of aromatic groups are linked via a single bond or a divalent linking group, and R 2
  • the divalent group which has an aromatic group as may be formed, and the amino group in the diamine component and the aromatic group may be linked via a divalent linking group.
  • the divalent linking group is preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, such as a methylene group, an ethylene group, or a propylene group), an oxygen atom, a sulfur atom, a divalent sulfone group, or an ester bond. , Ketone group, amide group and the like.
  • the aromatic group and alkylene group that can form a divalent group having an aromatic group may have a substituent, and as such a substituent, an alkyl group (preferably an alkyl group having 1 to 4 carbon atoms) may be used.
  • an alkoxy group such as a halogen atom and a methoxy group
  • an aryl group such as a cyano group and a phenyl group.
  • Specific examples of the aromatic diamine component having R 2 as a core include, for example, an m-phenylenediamine component, a p-phenylenediamine component, a 2,4-tolylenediamine component, a 3,3′-diaminodiphenyl ether component, 3, 4'-diaminodiphenyl ether component, 4,4'-diaminodiphenyl ether component, 3,3'-diaminodiphenyl sulfone component, 4,4'-diaminodiphenyl sulfone component, 3,4'-diaminodiphenyl sulfone component, 3,3 ' -Diaminodiphenylmethane component, 4,4'-diaminodiphenylmethane component,
  • aromatic diamine components include p-phenylenediamine component, 4,4′-diaminodiphenyl ether component, 3,3′-diaminodiphenylsulfone component, 4,4′-diaminodiphenylsulfone component, and 2,2′-bis.
  • (4-aminophenyl) hexafluoropropane component 1,4-bis (4-aminophenoxy) benzene component, imino-di-p-phenylenediamine component, 4,4'-diaminobiphenyl component, 4,4'-diamino Benzophenone component, 3,3′-dimethoxy-4,4′-diaminobiphenyl component, 3,3′-dimethyl-4,4′-diaminobiphenyl component, 2,2′-dimethyl 4,4′-diaminobiphenyl component, 2,2′-bis (trifluoromethyl) benzidine component, o-toluidine sulfone component, 2,2-bis (4-amino Nophenoxyphenyl) propane component, 9,9-bis (4-aminophenyl) fluorene component, 4,4′-di- (3-aminophenoxy) diphenylsulfone component, 4,4′-diaminobenz
  • the diamine component may be substituted with a hydroxyl group.
  • bisaminophenol components include 3,3′-dihydroxybenzidine component, 3,3′-diamino-4,4′-dihydroxybiphenyl component, and 4,4′-diamino-3,3′-dihydroxy.
  • Biphenyl component 3,3′-diamino-4,4′-dihydroxydiphenylsulfone component, 4,4′-diamino-3,3′-dihydroxydiphenylsulfone component, bis- (3-amino-4-hydroxyphenyl) methane Component, 2,2-bis- (3-amino-4-hydroxyphenyl) propane component, 2,2-bis- (3-amino-4-hydroxyphenyl) hexafluoropropane component, 2,2-bis- (4 -Amino-3-hydroxyphenyl) hexafluoropropane component, bis- (4-amino-3-hydroxyphenyl) methane component, 2 2-bis- (4-amino-3-hydroxyphenyl) propane component, 4,4′-diamino-3,3′-dihydroxybenzophenone component, 3,3′-diamino-4,4′-dihydroxybenzophenone component, 4 , 4'-diamino-3,3'
  • R 2 in the general formula (1) is a divalent group having an aromatic group selected from the following.
  • X 1 represents —O—, —S—, —C (CF 3 ) 2 —, —CH 2 —, —SO 2 —, —NHCO—.
  • * Represents a bonding position with —NH— or —OH bonded to R 2 in the general formula (1).
  • —NH— and —OH bonded to R 2 are bonded to each other in the ortho position (adjacent position).
  • the content of the aromatic diamine component having two amino groups with R 2 as a nucleus in the resin (a) is 5 to 40 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 10 to 30 mol%.
  • the R 2 in order to enhance the adhesion to the substrate can be a silicon diamine component as the diamine component to the nucleus.
  • examples include bis (4-aminophenyl) dimethylsilane component, bis (4-aminophenyl) tetramethylsiloxane component, bis (4-aminophenyl) tetramethyldisiloxane component, bis ( ⁇ -aminopropyl) tetramethyl.
  • Examples thereof include a disiloxane component, a 1,4-bis ( ⁇ -aminopropyldimethylsilyl) benzene component, a bis (4-aminobutyl) tetramethyldisiloxane component, and a bis ( ⁇ -aminopropyl) tetraphenyldisiloxane component.
  • a disiloxane component a 1,4-bis ( ⁇ -aminopropyldimethylsilyl) benzene component, a bis (4-aminobutyl) tetramethyldisiloxane component, and a bis ( ⁇ -aminopropyl) tetraphenyldisiloxane component.
  • a disiloxane component examples thereof include a disiloxane component, a 1,4-bis ( ⁇ -aminopropyldimethylsilyl) benzene component, a bis (4-aminobutyl) tetramethyld
  • R 5 and R 6 represent a divalent organic group
  • R 7 and R 8 represent a monovalent organic group.
  • a plurality of R 7 may be the same as or different from each other.
  • the plurality of R 8 may be the same as or different from each other.
  • Examples of the divalent organic group represented by R 5 and R 6 include a linear or branched alkylene group having 1 to 20 carbon atoms which may have a substituent, a phenylene group having 6 to 20 carbon atoms, carbon This represents a divalent alicyclic group of 3 to 20 or a group constituted by combining these.
  • the monovalent organic group represented by R 7 and R 8 represents a linear or branched alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may have a substituent. . More specifically, the following can be mentioned.
  • the content of the silicon diamine component having at least two amino groups with R 2 as a nucleus in the resin (a) is 5 to 40 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 10 to 30 mol%.
  • the resin (a) having the repeating unit represented by the general formula (1) is thermoset to be polyimide, the viewpoint of improving linearity and rigidity and achieving low stress to prevent wafer warpage, From the viewpoint of enhancing the adhesiveness with the substrate, the viewpoint of enhancing the alkali solubility after exposure, and the like, it has a repeating unit represented by the following general formula (2) and a repeating unit represented by the following general formula (3).
  • a resin is preferred.
  • R 1 ' has the same meaning as R 1 in the general formula (1).
  • R 3 ' has the same meaning as R 3 in Formula (1).
  • at least one of the plurality of —CO 2 R ′ 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • R 4 is a divalent organic group having an alicyclic group.
  • R 1 "has the same meaning as R 1 in the general formula (1).
  • R 3 has the same meaning as R 3 in Formula (1).
  • at least one of the plurality of —CO 2 R 3 ′′ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • R 5 is a divalent organic group different from R 4 .
  • divalent organic group having an alicyclic group for R 4 include those similar to the specific examples and preferred examples of the divalent group having an alicyclic group for R 2 .
  • examples of the divalent organic group R 5 different from R 4 include the divalent group having an aromatic group and the divalent group containing a silicon atom described above for R 2 .
  • R 5 in the general formula (3) is a fragrance from the viewpoint of improving linearity and rigidity, achieving low stress and preventing wafer warpage, and improving heat resistance when cured to polyimide.
  • a divalent group having an aromatic group is preferred, and specific examples and preferred examples of the divalent group having an aromatic group for R 5 include a divalent group having an aromatic group for R 2 . Specific examples and preferred examples are the same.
  • a divalent group represented by any of the following formulas is more preferable.
  • At least one hydrogen atom of each aromatic ring is independently selected from the group consisting of a fluorine atom, a chlorine atom, a bromine atom, a methyl group, a methoxy group, a cyano group, a phenyl group, and a trifluoromethyl group. It may be substituted by a species atom or group.
  • Examples of the organic group for R 3 , R 3 ′ or R 3 ′′ preferably have 1 to 20 carbon atoms.
  • a group that decomposes by the action of an acid to generate an alkali-soluble group an alkyl group, A cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a silicon atom-containing group, —CORc (Rc is an alkyl group, an aryl group, a cycloalkyl group), —SO 2 Rd (Rd is an alkyl group, Aryl group, cycloalkyl group, o-quinonediazide group), or a combination thereof.
  • the alkyl group represented by R 3 , R 3 ′ or R 3 ′′ may have a substituent, and is preferably a linear or branched alkyl group having 1 to 20 carbon atoms in the alkyl chain. It may have an oxygen atom, a sulfur atom, or a nitrogen atom, specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group And straight chain alkyl groups such as n-dodecyl group, n-tetradecyl group and n-octadecyl group, and branched alkyl groups such as isopropyl group, isobutyl group, t-butyl group, neopentyl group and 2-ethylhexyl group.
  • the substituent include a cyano group, a halogen atom, a
  • the cycloalkyl group represented by R 3 , R 3 ′ or R 3 ′′ may have a substituent, preferably a cycloalkyl group having 3 to 20 carbon atoms, which may be polycyclic, Specific examples include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like.
  • the aryl group represented by R 3 , R 3 ′ or R 3 ′′ may have a substituent, preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a naphthyl group, And anthryl group.
  • the aralkyl group represented by R 3 , R 3 ′ or R 3 ′′ may have a substituent, preferably an aralkyl group having 7 to 20 carbon atoms, such as a benzyl group, a phenethyl group, A naphthylmethyl group and a naphthylethyl group are mentioned.
  • the alkoxy group represented by R 3 , R 3 ′ or R 3 ′′ may have a substituent, preferably an alkoxy group having 1 to 20 carbon atoms, such as a methoxy group, an ethoxy group, Examples include propoxy group, n-butoxy group, pentyloxy group, hexyloxy group, heptyloxy group and the like.
  • the silicon atom-containing group represented by R 3 , R 3 ′ or R 3 ′′ is not particularly limited as long as silicon is contained, but a silyloxy group (trimethylsilyloxy, triethylsilyloxy, t-butyldimethylsilyloxy) is preferable.
  • the alkenyl group represented by R 3 , R 3 ′ or R 3 ′′ is a group having a double bond at an arbitrary position of the alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group or silicon atom-containing group.
  • the number of carbon atoms is preferably 1 to 12, more preferably 1 to 6.
  • a vinyl group and an allyl group are preferable.
  • the alkynyl group represented by R 3 , R 3 ′ or R 3 ′′ has a triple bond at any position of the above alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group and silicon atom-containing group.
  • Preferred are those having 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, such as ethynyl group and propargyl group.
  • At least one of the plurality of —CO 2 R 3 present in the resin (a) is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  • Formula (2) -CO 2 R 3 in ' is the same for -CO 2 R 3 "in formula (3).
  • the group that decomposes by the action of an acid to generate an alkali-soluble group is a group that decomposes by the action of an acid to generate an alkali-soluble group such as a hydroxyl group or a carboxyl group on the resin side (hereinafter also referred to as an acid-decomposable group).
  • the acid-decomposable group is preferably a group that decomposes by the action of an acid and generates a carboxyl group as an alkali-soluble group on the resin side.
  • a preferred group as the acid-decomposable group is a group obtained by substituting the hydrogen atom of these alkali-soluble groups with a group capable of leaving with an acid. Examples of the group capable of leaving with an acid include —C (R 36 ) (R 37 ) (R 38 ), —C (R 36 ) (R 37 ) (OR 39 ), —C (R 01 ) (R 02 ). ) (OR 39 ) and the like.
  • R 36 to R 39 each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
  • R 36 and R 37 may be bonded to each other to form a ring.
  • R 01 and R 02 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
  • the acid-decomposable group is preferably a tertiary alkyl ester group, an acetal ester group, a cumyl ester group, an enol ester group or the like.
  • a tertiary alkyl ester group and an acetal ester group are more preferable, and a photosensitive film having high sensitivity and high resolution can be obtained by using them.
  • the tertiary alkyl ester group as the acid-decomposable group is preferably an ester group in which the hydrogen atom of the carboxyl group is substituted with a group represented by the following general formula (AI).
  • T represents a single bond or a —Rt—COO— group.
  • Rt represents an alkylene group or a cycloalkylene group.
  • Rx 1 to Rx 3 each independently represents an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic). Two of Rx 1 to Rx 3 may combine to form a cycloalkyl group (monocyclic or polycyclic).
  • Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a —CH 2 — group, — (CH 2 ) 2 — group, or — (CH 2 ) 3 — group.
  • the alkyl group of Rx 1 to Rx 3 is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group.
  • Examples of the cycloalkyl group represented by Rx 1 to Rx 3 include monocyclic cycloalkyl groups such as cyclopentyl group and cyclohexyl group, polycyclic cycloalkyl groups such as norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, and adamantyl group. Groups are preferred.
  • Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, an adamantyl group
  • a polycyclic cycloalkyl group such as a group is preferred.
  • a monocyclic cycloalkyl group having 5 or 6 carbon atoms is particularly preferable.
  • An embodiment in which Rx 1 is a methyl group or an ethyl group, and Rx 2 and Rx 3 are bonded to form the above-described cycloalkyl group is preferable.
  • Each of the above groups may have a substituent.
  • substituents include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, Examples thereof include alkoxycarbonyl groups (having 2 to 6 carbon atoms), and those having 8 or less carbon atoms are preferred.
  • Rxa and Rxb each represents an alkyl group having 1 to 4 carbon atoms.
  • Z represents the substituent which each said group may have, and when there exist multiple, each is independent.
  • p represents 0 or a positive integer.
  • the tertiary alkyl ester group as the acid-decomposable group includes a group represented by the following general formula (I) and a group represented by the following general formula (II) as the group represented by the general formula (AI).
  • a tertiary alkyl ester group having at least one of the above is more preferable.
  • R 2 , R 4 , R 5 and R 6 each independently represents an alkyl group or a cycloalkyl group.
  • R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.
  • the alkyl group in R 2 may be linear or branched, and may have a substituent.
  • the cycloalkyl group in R 2 may be monocyclic or polycyclic and may have a substituent.
  • R 2 is preferably an alkyl group, more preferably 1 to 10 carbon atoms, still more preferably 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group.
  • R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.
  • the alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and the carbon number thereof is preferably 3 to 7, more preferably 5 or 6.
  • the alkyl group in R 4 , R 5 , and R 6 may be linear or branched and may have a substituent.
  • the alkyl group those having 1 to 4 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group and t-butyl group are preferable.
  • the cycloalkyl group in R 4 , R 5 and R 6 may be monocyclic or polycyclic and may have a substituent.
  • the cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group or an adamantyl group.
  • Examples of the group represented by the general formula (I) include groups represented by the following general formulas (Ia) and (Ib).
  • R 2 has the same meaning as R 2 in formula (I).
  • the group represented by the general formula (II) is preferably a group represented by the following general formula (II-a).
  • R 4 and R 5 have the same meaning as in general formula (II).
  • the acetal ester group as the acid-decomposable group is preferably an ester group in which a hydrogen atom of a carboxyl group is substituted with a group represented by the following general formula (III).
  • Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
  • Rb represents a single bond or a divalent linking group.
  • Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom.
  • At least two of Ra, Rb and Q may be bonded to each other to form a ring. This ring is preferably a 5-membered ring or a 6-membered ring.
  • Ra is particularly preferably a hydrogen atom, a methyl group, a phenyl group or a benzyl group, and a photosensitive film having good sensitivity can be obtained.
  • Ra is a group represented by the following general formula (IV) or (V) from the standpoint of preventing degradation of the acetal ester group as an acid-decomposable group during storage due to steric hindrance and preventing a decrease in patternability. Is also preferable.
  • Rc, Rd, Re, Rf and Rg are each independently an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, cyano.
  • Ra is a group represented by the general formula (IV) or (V)
  • the progress of the imidization reaction during storage can be suppressed in the resin having the repeating unit represented by the general formula (1), and the patterning property Can be prevented.
  • the alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group as Rc, Rd, Re, Rf, Rg is an alkyl group, cycloalkyl group, aryl group, aralkyl group for R 3 in the general formula (1), The thing similar to what was mentioned above as an alkoxy group is mentioned.
  • the aryloxy group as Rc, Rd, Re, Rf, Rg is preferably an aryloxy group having 6 to 10 carbon atoms, and specific examples include phenoxy, toluyloxy, 1-naphthoxy and the like.
  • the alkoxycarbonyl group as Rc, Rd, Re, Rf, Rg is preferably an alkoxycarbonyl group having 1 to 10 carbon atoms, specifically, methoxycarbonyl, ethoxycarbonyl, linear or branched propoxycarbonyl, cyclopentyloxycarbonyl, Examples include cyclohexyloxycarbonyl.
  • Examples of the aryloxy moiety of the aryloxycarbonyl group as Rc, Rd, Re, Rf, and Rg include the same aryloxy groups as those described above.
  • At least one of Rc and Rd in the general formula (IV) is a cycloalkyl group, an aryl group, or an aralkyl. It is preferably a group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom, and more preferably at least one is an aryl group.
  • the divalent linking group as Rb is, for example, an alkylene group (preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group or an octylene group), a cycloalkylene group.
  • an alkylene group preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group or an octylene group
  • a cycloalkylene group preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group or an octylene group
  • a cycloalkylene group having 3 to 15 carbon atoms such as a cyclopentylene group or a cyclohexylene group
  • R 0 is a hydrogen atom or an alkyl group (eg, an alkyl group having 1 to 8 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, Hexyl group and octyl group).
  • Rb is preferably a single bond, an alkylene group, or a divalent linking group comprising a combination of an alkylene group and at least one of —O—, —CO—, —CS— and —N (R 0 ) —.
  • An alkylene group, or a divalent linking group composed of a combination of an alkylene group and —O— is more preferable.
  • R 0 has the same meaning as R 0 described above.
  • the alkyl group as Q is the same as the alkyl group as Ra described above, for example.
  • Examples of the alicyclic group and aromatic ring group as Q include the cycloalkyl group and aryl group as Ra described above.
  • the number of carbon atoms is preferably 3-18.
  • a group in which a plurality of aromatic rings are connected via a single bond is also included in the aromatic group as Q.
  • Examples of the alicyclic group containing a hetero atom and the aromatic ring group containing a hetero atom include, for example, thiirane, cyclothiolane, thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole. And pyrrolidone.
  • the alicyclic group and aromatic ring group as Q may have a substituent, and examples thereof include an alkyl group, a cycloalkyl group, a cyano group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. It is done.
  • (—Rb-Q) is particularly preferably a methyl group, an aryloxyethyl group, a cyclohexylethyl group, or an arylethyl group, which improves solubility and thermal stability.
  • any of Rb and Q and Ra are bonded to form a propylene group or a butylene group and contain an oxygen atom
  • a 5-membered ring or a 6-membered ring is formed is mentioned.
  • N C When the total carbon number of Ra, Rb and Q is expressed as N C , when N C is large, the alkali dissolution rate change of the resin (a) before and after the removal of the group represented by the general formula (III) is eliminated Increases, the dissolution contrast becomes harder, and the resolution is improved.
  • the range of N C is preferably 2 to 20, and 2 to 15 is particularly preferable.
  • N C is 20 or less, the glass transition temperature of the polymer compound is suppressed from being lowered, and further, the generation of defects in which a desorbed substance from the acid-decomposable group adheres to the pattern is suppressed.
  • At least one of Ra, Rb and Q is preferably an electron-withdrawing group or a group having an electron-withdrawing group.
  • the electron withdrawing group include an alkoxy group, aryl group, alkenyl group, alkynyl group, halogen atom, acyl group, arylcarbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, aryloxy group, nitrile group (cyano group).
  • An alkylsulfonyl group, an arylsulfonyl group, a nitro group, and the like, and an alkoxy group, an aryl group, and an acyl group are preferable.
  • the thermal decomposition temperature of —CO 2 R 3 in the general formula (1), —CO 2 R 3 ′ in the general formula (2) or —CO 2 R 3 ′′ in the general formula (3) is 100 to 220 ° C. Preferably, it is 120 to 210 ° C., more preferably 140 to 200 ° C.
  • the thermal decomposition temperature can be determined, for example, by differential thermobalance analysis. When the thermal decomposition temperature is too low, the storage stability of the photosensitive resin composition of the present invention may be lowered. If the thermal decomposition temperature is too high, the stress increases and the wafer warpage may increase. In addition, decomposition products remain in the film, which may cause outgassing and decrease in reliability.
  • the thermal decomposition temperature By setting the thermal decomposition temperature to 100 to 220 ° C., the stress of the cured relief pattern according to the present invention is further reduced, and the wafer warpage is further reduced.
  • the reason why the stress is further lowered is not clear, but by setting the thermal decomposition temperature to 100 to 220 ° C., —CO 2 R 3 in the repeating unit represented by the general formula (1) is converted to —CO 2 during low temperature curing. It is presumed that the in-plane orientation of the polyimide film is enhanced and the stress is reduced by ring closure of the imide after 2 H.
  • R 3 , R 3 ′ or R 3 ′′ capable of achieving the thermal decomposition temperature as described above
  • Examples include a structure in which Ra in the general formula (III) is a group represented by the general formula (IV) or the following general formula (VII).
  • R 7 to R 8 each independently represents a hydrogen atom, an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic), and at least one of R 7 to R 8 is a hydrogen atom. .
  • Rh represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group or a halogen atom.
  • Specific examples and preferred examples of the alkyl group and cycloalkyl group for R 7 to R 8 include the same as the specific examples and preferred examples described above for the alkyl group and cycloalkyl group for Rx 1 to Rx 3. .
  • the alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group as Rh is the same as that described above as the alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group for R 3 in the general formula (1).
  • the aryloxy group as Rh is preferably an aryloxy group having 6 to 10 carbon atoms, and specific examples include phenoxy, toluyloxy, 1-naphthoxy and the like.
  • the alkoxycarbonyl group as Rh is preferably an alkoxycarbonyl group having 1 to 10 carbon atoms, and specific examples include methoxycarbonyl, ethoxycarbonyl, linear or branched propoxycarbonyl, cyclopentyloxycarbonyl, cyclohexyloxycarbonyl and the like.
  • Examples of the aryloxy moiety of the aryloxycarbonyl group as Rh include the same aryloxy groups as those described above.
  • a hydrogen atom and an organic group can be mixed in R 3 . It is preferably 100 mol% to 20 mol%, more preferably 100 mol% to 40 mol%, respectively, based on the total R 3 in the resin (a).
  • the dissolution rate with respect to the aqueous alkali solution is changed, and by this adjustment, a photosensitive resin composition having an appropriate dissolution rate can be obtained.
  • the proportion of the group that decomposes by the action of an acid to generate an alkali-soluble group, the so-called protection rate is preferably 40 to 100%, and preferably 45 to 100 % Is more preferable.
  • terminal blocker can be made to react with the terminal of the polymer which has as a main component the structural unit represented by General formula (1).
  • the terminal capping agent monoamine, acid anhydride, monocarboxylic acid, monoacid chloride compound, monoactive ester compound and the like can be used.
  • terminal blocker react it is preferable at the point which can control the repeating number of a structural unit, ie, molecular weight, in a preferable range.
  • acid deactivation due to neutralization of the terminal amine and the generated acid can be suppressed by the terminal blocking agent.
  • various organic groups such as a crosslinking reactive group having a carbon-carbon unsaturated bond can be introduced as a terminal group.
  • Monoamines used for end-capping agents are 5-amino-8-hydroxyquinoline, 4-amino-8-hydroxyquinoline, 1-hydroxy-8-aminonaphthalene, 1-hydroxy-7-aminonaphthalene, 1-hydroxy- 6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 1-hydroxy-3-aminonaphthalene, 1-hydroxy-2-aminonaphthalene, 1-amino-7-hydroxynaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 2-hydroxy-4-aminonaphthalene, 2-hydroxy-3-aminonaphthalene, 1-amino-2 -Hydroxynaphthalene, 1-carboxy-8-amino Naphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-
  • 5-amino-8-hydroxyquinoline 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2 -Hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5 Aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4- Amino salicylic acid, 5-amino salicylic acid, 6-amino salicy Acid, 2-aminobenzenesulfonic acid, 3-aminobenzo
  • Acid anhydrides, monocarboxylic acids, monoacid chloride compounds and active ester compounds used as end-capping agents are phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, 3-hydroxyphthalic anhydride Acid anhydrides such as 2-carboxyphenol, 3-carboxyphenol, 4-carboxyphenol, 2-carboxythiophenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-8-carboxynaphthalene, 1- Hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-hydroxy-4-carboxynaphthalene, 1-hydroxy-3-carboxynaphthalene, 1-hydroxy-2-carbo Sinaphthalene, 1-mercapto-8-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxy
  • phthalic anhydride maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, acid anhydrides such as 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxy Naphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, 3-ethynylbenzoic acid, 4-ethynylbenzoic acid, 3,4-diethynylbenzoic acid, 3,5-diethynyl Benzo Monocarboxylic acids such as these, and monoacid chlor
  • the introduction ratio of the monoamine used for the terminal blocking agent is preferably in the range of 0.1 to 60 mol%, particularly preferably 5 to 50 mol%, based on the total amine component.
  • the introduction ratio of the compound selected from the acid anhydride, monocarboxylic acid, monoacid chloride compound and monoactive ester compound used as the end-capping agent is in the range of 0.1 to 100 mol% with respect to the diamine component.
  • the amount is particularly preferably 5 to 90 mol%.
  • a plurality of different terminal groups may be introduced by reacting a plurality of terminal blocking agents.
  • the end-capping agent introduced into the polymer can be easily detected by the following method.
  • a polymer having an end-capping agent introduced therein is dissolved in an acidic solution and decomposed into an amine component and an acid anhydride component that are constituent units of the polymer.
  • the end-capping agent can be easily detected by gas chromatography (GC) or NMR measurement.
  • GC gas chromatography
  • NMR nuclear magnetic resonance
  • PLC pyrolysis gas chromatography
  • infrared spectrum 13 CNMR spectrum.
  • the resin (a) used in the photosensitive resin composition of the present invention preferably has a structural unit represented by the general formula (1) as a main component.
  • the main component as used herein means that 70 mol% or more of the structural unit represented by the general formula (1) is contained. More preferably, it is 80 mol% or more, and most preferably 90 mol% or more.
  • the resin used in the present invention is a copolymer of the structural unit represented by the general formula (1) and other structural units, or contains the structural unit represented by the general formula (1). It may be a mixture of a plurality of resins.
  • a resin containing the structural unit represented by the general formula (1) and a resin not containing the structural unit represented by the general formula (1) (for example, in the general formula (1), R 2 is an aromatic ring only.
  • a resin the resin containing the structural unit represented by the general formula (1) is preferably contained in an amount of 50% by mass or more, and more preferably 75% by mass or more.
  • the type and amount of structural units used for copolymerization or mixing are preferably selected within a range that does not impair the heat resistance of the polymer obtained by the final heat treatment.
  • the resin (a) containing the repeating unit represented by the general formula (1) preferably has a mass average molecular weight of 200,000 or less from the viewpoint of alkali dissolution rate, film physical properties, etc. 200,000 is more preferable, 2,000 to 100,000 is more preferable, and 3,000 to 100,000 is particularly preferable. By adjusting to this molecular weight range, it is possible to obtain a photosensitive film having low stress, excellent mechanical properties, and excellent resolution with few development defects.
  • the molecular weight can be measured by a gel permeation chromatography method and determined using a standard polystyrene calibration curve.
  • the dispersity (molecular weight distribution) is preferably 1.0 to 4.0, and more preferably 1.0 to 3.5.
  • any conventionally known method may be used (see, for example, the latest polyimide: basics and applications (edited by Japan Polyimide Research Group)).
  • a method of reacting tetracarboxylic dianhydride and diamine compound at low temperature a diester is obtained by tetracarboxylic dianhydride and alcohol, and then in the presence of an amine and a condensing agent.
  • polyamic acid is obtained by reacting a diamine compound and tetracarboxylic dianhydride in an organic solvent at ⁇ 20 to 50 ° C. for several minutes to several days, and then reacting with basic halides or under acidic conditions.
  • R 1 , R 2 and R 3 have the same meaning as in general formula (1).
  • organic solvents that can be used in the synthesis reaction of the polyamic acid include amides such as N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidinone, and 1,3-dimethyl-2-imidazolidinone.
  • Solvents aromatic solvents such as benzene, anisole, diphenyl ether, nitrobenzene, benzonitrile, pyridine, halogen solvents such as chloroform, dichloromethane, 1,2-dichloroethane, 1,1,2,2-tetrachloroethane, Examples thereof include ether solvents such as tetrahydrofuran, dioxane and diglyme. Of these, amide solvents are preferred, and high molecular weight polyamic acid can be obtained.
  • the boiling point of the organic solvent used for the polymerization reaction is preferably 50 ° C. or higher, more preferably 100 ° C. or higher, and particularly preferably 150 ° C. or higher.
  • the concentration of the solute in the reaction solution is preferably 1 to 50% by mass, more preferably 5 to 30% by mass, and particularly preferably 10 to 20% by mass.
  • the polyamic acid ester obtained as described above is formed on a substrate such as a semiconductor substrate together with the component (b), and a relief pattern can be formed by a subsequent lithography process. By heat treatment of this pattern, polyamic acid ester or polyamic acid is dehydrated and closed, and a cured polyimide film is obtained.
  • the polyamic acid ester having the structural unit represented by the general formula (1) has a film formed from the precursor having an i-line transmittance of 1% or more per film thickness of 20 ⁇ m, and 5% or more. It is preferably 10% or more, more preferably 10 to 80%. When this value is less than 1%, it is difficult to obtain a photosensitive resin composition capable of forming a pattern with high resolution and good shape.
  • the transmittance of i-line (light having a wavelength of 365 nm) can be measured with a spectrophotometer (for example, Hitachi U3410 type, manufactured by Hitachi, Ltd.).
  • the residual stress of the cured polyimide film formed by imide ring closure from the polyamic acid ester having the structural unit represented by the general formula (1) is preferably 25 MPa or less, more preferably 20 MPa or less. preferable.
  • the warpage amount of the silicon wafer and the residual strain inside the silicon chip increase.
  • the residual stress of the polyimide film can be measured at a normal temperature (25 ° C.) with a thin film stress measuring device (for example, FLX-2320 manufactured by Tencor).
  • the polyamic acid ester having the structural unit represented by the above general formula (1) that satisfies these characteristics can suppress the aromatic ring ⁇ conjugation length by selecting an appropriate monomer, and has a rigid and straight main chain. It will have a structure that can be formed.
  • the resin (a) may be used alone or in combination. Further, a resin other than the resin (a) may be used in combination.
  • composition of the present invention is a compound that generates acid upon irradiation with actinic ray or radiation (also referred to as “photoacid generator” or “(b) component”). Containing. These may be used in combination of two or more. Moreover, a sensitizer etc. can also be used together for sensitivity adjustment.
  • the photoacid generator is used as a photoinitiator for photocationic polymerization, a photoinitiator for radical photopolymerization, a photodecolorant for dyes, a photochromic agent, or a microresist.
  • Known compounds that generate an acid upon irradiation with active light or radiation and mixtures thereof can be appropriately selected and used.
  • Examples include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.
  • a group that generates an acid upon irradiation with actinic rays or radiation or a compound in which a compound is introduced into the main chain or side chain of the polymer, such as US Pat. No. 3,849,137, German Patent No. 3914407, JP 63-26653, JP 55-164824, JP 62-69263, JP 63-146038, JP 63-163452, JP 62-153853, JP The compounds described in 63-146029 and the like can be used.
  • R 201 , R 202 and R 203 each independently represents an organic group.
  • R 204 to R 207 each independently represents an aryl group, an alkyl group, or a cycloalkyl group.
  • X ⁇ represents a non-nucleophilic anion, preferably sulfonate anion, carboxylate anion, bis (alkylsulfonyl) amide anion, tris (alkylsulfonyl) methide anion, BF 4 ⁇ , PF 6 ⁇ , SbF 6 —
  • An organic anion having a carbon atom is preferable.
  • Preferred organic anions include organic anions represented by the following general formula.
  • Rc 1 represents an organic group.
  • the organic group in Rc 1 include those having 1 to 30 carbon atoms, and preferably an alkyl group, a cycloalkyl group, an aryl group, or a plurality of these which may be substituted is a single bond, —O—, — And groups linked by a linking group such as CO 2 —, —S—, —SO 3 —, —SO 2 N (Rd 1 ) —.
  • Rd 1 represents a hydrogen atom or an alkyl group.
  • Rc 3 , Rc 4 and Rc 5 each independently represents an organic group.
  • Examples of the organic group for Rc 3 , Rc 4 and Rc 5 include the same organic groups as those for Rc 1 , preferably a perfluoroalkyl group having 1 to 4 carbon atoms. Rc 3 and Rc 4 may be bonded to form a ring. Examples of the group formed by combining Rc 3 and Rc 4 include an alkylene group, a cycloalkylene group, and an arylene group. A perfluoroalkylene group having 2 to 4 carbon atoms is preferred.
  • the organic group of Rc 1 and Rc 3 to Rc 5 is preferably an alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group, or a phenyl group substituted with a fluorine atom or a fluoroalkyl group.
  • a fluorine atom or a fluoroalkyl group By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by light irradiation is increased and the sensitivity is improved.
  • Rc 3 and Rc 4 are combined to form a ring, so that the acidity of the acid generated by light irradiation is increased, and the sensitivity is improved, which is preferable.
  • the organic group as R 201 , R 202 and R 203 generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.
  • Examples of the organic group for R 201 to R 203 include an aryl group, an alkyl group, and a cycloalkyl group.
  • Two of R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group.
  • Examples of the group formed by combining two of R 201 to R 203 include an alkylene group (eg, butylene group, pentylene group).
  • the aryl group of R 204 to R 207 is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
  • the aryl group of R 204 to R 207 may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the skeleton of the aryl group having a heterocyclic structure include pyrrole, furan, thiophene, indole, benzofuran, benzothiophene, and the like.
  • the alkyl group and cycloalkyl group in R 204 to R 207 are preferably a linear or branched alkyl group having 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups having a number of 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group).
  • the aryl group, alkyl group, and cycloalkyl group of R 204 to R 207 may have a substituent.
  • Examples of the substituent that the aryl group, alkyl group, and cycloalkyl group represented by R 204 to R 207 may have include an alkyl group (eg, having 1 to 15 carbon atoms) and a cycloalkyl group (eg, having 3 to 15 carbon atoms). ), Aryl groups (for example, having 6 to 15 carbon atoms), alkoxy groups (for example, having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, phenylthio groups, and the like.
  • Triarylsulfonium salts are particularly preferable in terms of thermal stability and sensitivity, and it is preferable to use a sensitizer in combination. Two or more kinds of such compounds can be used in combination as required.
  • the triarylsulfonium salt it is preferable that at least one aryl group has an electron withdrawing group as a substituent, and the total Hammett value of the substituents bonded to the aryl skeleton is preferably larger than 0.18. .
  • the electron withdrawing group means a substituent having a Hammett value (Hammet substituent constant ⁇ ) larger than 0.
  • the sum of Hammett values of substituents bonded to the aryl skeleton in the specific photoacid generator is preferably 0.18 or more, more preferably greater than 0.46. Preferably, it is more preferably larger than 0.60.
  • the Hammett value represents the degree of electron withdrawing property of a cation having a triarylsulfonium salt structure, and there is no particular upper limit from the viewpoint of increasing sensitivity, but from the viewpoint of reactivity and stability. Is preferably more than 0.46 and less than 4.0, more preferably more than 0.50 and less than 3.5, and particularly preferably more than 0.60 and less than 3.0.
  • the Hammett value in the present invention uses the numerical values described in Naoki Inamoto, Chemistry Seminar 10 Hammett's Law-Structure and Reactivity (published by Maruzen Co., Ltd. in 1983).
  • Examples of the electron withdrawing group introduced into the aryl skeleton include a trifluoromethyl group, a halogen atom, an ester group, a sulfoxide group, a cyano group, an amide group, a carboxyl group, and a carbonyl group.
  • the Hammett values of these substituents are shown below.
  • a trifluoromethyl group (—CF 3 , m: 0.43, p: 0.54), a halogen atom [for example, —F (m: 0.34, p: 0.06), —Cl (m: 0. 37, p: 0.23), -Br (m: 0.39, p: 0.23), -I (m: 0.35, p: 0.18)], an ester group (for example, -COCH 3 , O: 0.37, p: 0.45), sulfoxide group (for example, —SOCH 3 , m: 0.52, p: 0.45), cyano group (—CN, m: 0.56, p: 0.66), an amide group (for example, —NHCOCH 3 , m: 0.21, p: 0.00), a carboxy group (—COOH, m: 0.37, p: 0.45), a carbonyl group (— CHO, m: 0.36, p: (043)) and the
  • nonionic substituents such as a halogen atom and a halogenated alkyl group are preferable from the viewpoint of hydrophobicity.
  • —Cl is preferable from the viewpoint of reactivity, and imparts hydrophobicity.
  • —F, —CF 3 , —Cl, and —Br are preferable.
  • substituents may be introduced into any one of the three aryl skeletons of the triarylsulfonium salt structure, or may be introduced into two or more aryl skeletons. Moreover, the substituent introduced into each of the three aryl skeletons may be one or plural. In the present invention, the sum of Hammett values of substituents introduced into these aryl skeletons is preferably more than 0.18, more preferably more than 0.46.
  • the number of substituents to be introduced is arbitrary. For example, only one substituent having a particularly large Hammett value (for example, a Hammett value exceeding 0.46 alone) may be introduced into one position of an aryl skeleton having a triarylsulfonium salt structure. Moreover, for example, a plurality of substituents introduced and the sum of the Hammett values exceeding 0.46 may be introduced.
  • the Hammett value of the substituent varies depending on the position where it is introduced, the sum of Hammett values in the specific photoacid generator according to the present invention is determined by the type of substituent, the position of introduction, and the number of introductions. become.
  • the Hammett's rule is usually expressed in the m-position and p-position, but in the present invention, the substituent effect at the o-position is calculated as the same value as the p-position as an index of electron withdrawing property.
  • Preferred substitution positions are preferably m-position and p-position, and most preferably p-position from the viewpoint of synthesis.
  • Preferred in the present invention is a sulfonium salt that is tri- or more substituted with a halogen atom, and most preferred is a sulfonium salt that is tri-substituted with a chloro group, specifically, each of the three aryl skeletons. And preferably have a triarylsulfonium salt structure in which —Cl is introduced, and more preferably —Cl is substituted at the p-position.
  • Examples of the sulfonate anion possessed by the triarylsulfonium salt contained in the composition of the present invention include an aryl sulfonate anion, an alkane sulfonate anion, and the like, which are substituted with a fluorine atom or an organic group having a fluorine atom.
  • An anion is preferred.
  • Examples of the compound having a triarylsulfonium salt structure are J.P. Am. Chem. Soc. 112 (16), 1990; 6004-6015, J.A. Org. Chem. 1988; It can be easily synthesized by the methods described in 5571-5573, WO02 / 081439A1 pamphlet, or European Patent (EP) No. 1113005.
  • triphenylsulfonium trifluoromethanesulfonate triphenylsulfonium trifluoroacetate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, 4-methoxyphenyldiphenylsulfonium trifluoroacetate, 4-phenylthiophenyldiphenylsulfonium trifluoromethanesulfonate or 4-phenylthiophenyl diphenylsulfonium trifluoroacetate and the like.
  • diaryliodonium salts include diphenyliodonium trifluoroacetate, diphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium trifluoroacetate, phenyl, 4- (2′-hydroxy- 1'-tetradecaoxy) phenyliodonium trifluoromethanesulfonate, 4- (2'-hydroxy-1'-tetradecoxy) phenyliodonium hexafluoroantimonate, phenyl, 4- (2'-hydroxy-1'-tetra Decaoxy) phenyliodonium-p-toluenesulfonate, etc .; diazomethane derivatives such as bis (cyclohexylsulfonyl) diazomethane, bis (t-butyl) Sulfon
  • oxime compounds more preferably oxime sulfonate compounds, are the most preferable examples from the viewpoint of sensitivity, resolution, dielectric constant, dimensional stability, and the like. Can be mentioned.
  • Preferred examples of the oxime sulfonate compound that is, the compound having an oxime sulfonate residue include compounds containing an oxime sulfonate residue represented by the formula (b1).
  • R 5 represents an alkyl group or an aryl group. Any group may be substituted, and the alkyl group in R 5 may be linear, branched or cyclic. Acceptable substituents are described below.
  • the alkyl group for R 5 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms.
  • the alkyl group represented by R 5 is an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (7,7-dimethyl-2-oxonorbornyl group or the like). It may be substituted with a cyclic group, preferably a bicycloalkyl group or the like.
  • the aryl group for R 5 is preferably an aryl group having 6 to 11 carbon atoms, more preferably a phenyl group or a naphthyl group.
  • the aryl group for R 5 may be substituted with a lower alkyl group, an alkoxy group or a halogen atom.
  • the compound containing the oxime sulfonate residue represented by the formula (b1) is an oxime sulfonate compound represented by the formula (OS-3), the formula (OS-4) or the formula (OS-5). Is particularly preferred.
  • R 1 represents an alkyl group, an aryl group or a heteroaryl group
  • each R 2 independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom
  • R 6 represents each independently a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group
  • X represents O or S
  • n represents 1 or 2
  • m represents an integer of 0 to 6.
  • the alkyl group, aryl group or heteroaryl group in R 1 may have a substituent.
  • the alkyl group for R 1 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
  • the substituent that the alkyl group in R 1 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group.
  • alkyl group in R 1 examples include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n -Octyl group, n-decyl group, n-dodecyl group, trifluoromethyl group, perfluoropropyl group, perfluorohexyl group, benzyl group.
  • the aryl group for R 1 is preferably an aryl group having 6 to 30 carbon atoms which may have a substituent.
  • substituents that the aryl group in R 1 may have include a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group.
  • Sulfonic acid group aminosulfonyl group, alkoxysulfonyl group.
  • Examples of the aryl group in R 1 include a phenyl group, a p-methylphenyl group, a p-chlorophenyl group, a pentachlorophenyl group, a pentafluorophenyl group, an o-methoxyphenyl group, and a p-phenoxyphenyl group.
  • the heteroaryl group for R 1 is preferably a heteroaryl group having 4 to 30 carbon atoms which may have a substituent.
  • substituents that the heteroaryl group in R 1 may have include a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl.
  • At least one of the heteroaryl groups in R 1 may be a heteroaromatic ring.
  • a heteroaromatic ring and a benzene ring are condensed. May be.
  • the heteroaryl group for R 1 is selected from the group consisting of optionally substituted thiophene ring, pyrrole ring, thiazole ring, imidazole ring, furan ring, benzothiophene ring, benzothiazole ring and benzimidazole ring. And a group in which one hydrogen atom is removed from the ring.
  • R 2 is preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom or an alkyl group.
  • one or two of R 2 present in the compound is an alkyl group, an aryl group or a halogen atom, and one is an alkyl group. More preferably an aryl group or a halogen atom, and particularly preferably one is an alkyl group and the rest is a hydrogen atom.
  • the alkyl group or aryl group in R 2 may have a substituent. Examples of the substituent that the alkyl group or aryl group in R 2 may have include the same groups as the substituent that the alkyl group or aryl group in R 1 may have.
  • the alkyl group for R 2 is preferably an alkyl group having 1 to 12 carbon atoms which may have a substituent, and is an alkyl group having 1 to 6 carbon atoms which may have a substituent. It is more preferable.
  • Examples of the alkyl group for R 2 include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, n-hexyl group, allyl group, and chloromethyl group.
  • a bromomethyl group, a methoxymethyl group, and a benzyl group are preferable, and a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, and an n-hexyl group are preferable.
  • a methyl group, an ethyl group, an n-propyl group, an n-butyl group, and an n-hexyl group are more preferable, and a methyl group is preferable.
  • the aryl group for R 2 is preferably an aryl group having 6 to 30 carbon atoms which may have a substituent.
  • the aryl group in R 2 is preferably a phenyl group, a p-methylphenyl group, an o-chlorophenyl group, a p-chlorophenyl group, an o-methoxyphenyl group, or a p-phenoxyphenyl group.
  • the halogen atom for R 2 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Among these, a chlorine atom and a bromine atom are preferable.
  • X represents O or S, and is preferably O.
  • the ring containing X as a ring member is a 5-membered ring or a 6-membered ring.
  • n represents 1 or 2, and when X is O, n is preferably 1, and when X is S, n is 2 is preferable.
  • the alkyl group and alkyloxy group in R 6 may have a substituent.
  • the alkyl group for R 6 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
  • the substituent that the alkyl group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. .
  • alkyl group for R 6 examples include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n -Octyl, n-decyl, n-dodecyl, trifluoromethyl, perfluoropropyl, perfluorohexyl and benzyl are preferred.
  • the alkyloxy group for R 6 is preferably an alkyloxy group having 1 to 30 carbon atoms which may have a substituent.
  • substituents that the alkyloxy group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. It is done.
  • alkyloxy group in R 6 a methyloxy group, an ethyloxy group, a butyloxy group, a hexyloxy group, a phenoxyethyloxy group, a trichloromethyloxy group, or an ethoxyethyloxy group is preferable.
  • examples of the aminosulfonyl group for R 6 include a methylaminosulfonyl group, a dimethylaminosulfonyl group, a phenylaminosulfonyl group, a methylphenylaminosulfonyl group, and an aminosulfonyl group. It is done.
  • examples of the alkoxysulfonyl group for R 6 include a methoxysulfonyl group, an ethoxysulfonyl group, a propyloxysulfonyl group, and a butyloxysulfonyl group.
  • m represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, and 0. It is particularly preferred.
  • the compound containing an oxime sulfonate residue represented by the formula (b1) is particularly preferably an oxime sulfonate compound represented by any one of the following formulas (OS-6) to (OS-11). .
  • R 1 represents an alkyl group, an aryl group, or a heteroaryl group
  • R 7 represents a hydrogen atom or a bromine atom
  • R 8 represents a hydrogen atom
  • R 9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group
  • 10 represents a hydrogen atom or a methyl group.
  • R 1 in the formulas (OS-6) to (OS-11) has the same meaning as R 1 in the formulas (OS-3) to (OS-5), and preferred embodiments thereof are also the same.
  • R 7 in formula (OS-6) represents a hydrogen atom or a bromine atom, and is preferably a hydrogen atom.
  • R 8 in the formulas (OS-6) to (OS-11) is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl
  • R 9 in formula (OS-8) and formula (OS-9) represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and is preferably a hydrogen atom.
  • R 10 in the formulas (OS-8) to (OS-11) represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
  • the oxime steric structure (E, Z) may be either one or a mixture.
  • oxime sulfonate compounds represented by the above formulas (OS-3) to (OS-5) include the following exemplified compounds, but the present invention is not limited thereto.
  • the compound containing an oxime sulfonate residue represented by the formula (b1) is also preferably a compound represented by the formula (OS-1).
  • R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or a heteroaryl. Represents a group.
  • R 2 represents an alkyl group or an aryl group.
  • R 21 to R 24 are each independently a hydrogen atom, halogen atom, alkyl group, alkenyl group, alkoxy group, amino group, alkoxycarbonyl group, alkylcarbonyl group, arylcarbonyl group, amide group, sulfo group, cyano group or Represents an aryl group. Two of R 21 to R 24 may be bonded to each other to form a ring.
  • R 21 to R 24 a hydrogen atom, a halogen atom and an alkyl group are preferable, and an embodiment in which at least two of R 21 to R 24 are bonded to each other to form an aryl group is also preferable. Among these, an embodiment in which R 21 to R 24 are all hydrogen atoms is preferable from the viewpoint of sensitivity. Any of the aforementioned functional groups may further have a substituent.
  • the compound represented by the formula (OS-1) is more preferably a compound represented by the following formula (OS-2).
  • R 1 , R 2 and R 21 to R 24 have the same meanings as in the formula (OS-1), and preferred examples thereof are also the same.
  • an embodiment in which R 1 in the formula (OS-1) and the formula (OS-2) is a cyano group or an aryl group is more preferable, represented by the formula (OS-2), in which R 1 is a cyano group, phenyl
  • the embodiment which is a group or a naphthyl group is most preferred.
  • the steric structure (E, Z, etc.) of the oxime or benzothiazole ring may be either one or a mixture.
  • b-9, b-16, b-31, and b-33 are preferable from the viewpoint of achieving both sensitivity and stability.
  • the above compound containing an oxime sulfonate residue represented by the formula (b1) may be an oxime sulfonate compound represented by the following formula (b2).
  • R 5 represents an alkyl group or an aryl group
  • X represents an alkyl group, an alkoxy group, or a halogen atom
  • m represents an integer of 0 to 3
  • m is 2 or 3. In some cases, multiple Xs may be the same or different.
  • the alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
  • the alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
  • the halogen atom as X is preferably a chlorine atom or a fluorine atom.
  • m is preferably 0 or 1. In the formula (b2), m is 1, X is a methyl group, the substitution position of X is the ortho position, R 5 is a linear alkyl group having 1 to 10 carbon atoms, 7,7-dimethyl- A compound that is a 2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
  • the compound containing an oxime sulfonate residue represented by the formula (b1) may be an oxime sulfonate compound represented by the formula (b3).
  • R 5 has the same meaning as R 5 in the formula (b1), X 'is a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, alkoxy group having 1 to 4 carbon atoms, cyano Represents a group or a nitro group, and L represents an integer of 0 to 5.
  • R 5 in the formula (b3) is methyl, ethyl, n-propyl, n-butyl, n-octyl, trifluoromethyl, pentafluoroethyl, perfluoro-n-propyl, perfluoro
  • a fluoro-n-butyl group, p-tolyl group, 4-chlorophenyl group or pentafluorophenyl group is preferred, and an n-octyl group is particularly preferred.
  • X ′ is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
  • L is preferably from 0 to 2, particularly preferably from 0 to 1.
  • Specific examples of the compound represented by the formula (b3) include ⁇ - (methylsulfonyloxyimino) benzyl cyanide, ⁇ - (ethylsulfonyloxyimino) benzyl cyanide, ⁇ - (n-propylsulfonyloxyimino) benzyl.
  • preferable oxime sulfonate compounds include the following compounds (i) to (viii), and the like can be used singly or in combination of two or more.
  • Compounds (i) to (viii) can be obtained as commercial products. It can also be used in combination with other types of (C) radiation-sensitive acid generators.
  • the content of the photoacid generator is preferably 1 to 30% by mass, more preferably 3 to 20% by mass based on the total solid content of the photosensitive resin composition.
  • the acid generator can be used alone or in combination of two or more. When two or more types are used in combination, it is preferable to combine two types of compounds that generate two types of organic acids that differ in the total number of atoms excluding hydrogen atoms by two or more. *
  • sensitizer may be added to the composition of the present invention in order to absorb actinic rays or radiation and promote the decomposition of the sulfonium salt.
  • the sensitizer absorbs actinic rays or radiation and enters an electronically excited state.
  • the sensitizer in an electronically excited state comes into contact with sulfonium, and effects such as electron transfer, energy transfer, and heat generation occur.
  • the polymerization initiator undergoes a chemical change and decomposes to generate radicals, acids or bases.
  • preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in the 350 nm to 450 nm region.
  • Polynuclear aromatics eg, pyrene, perylene, triphenylene, anthracene
  • xanthenes eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal
  • cyanines eg, thiacarbocyanine, oxacarbocyanine
  • merocyanine Eg, merocyanine, carbomerocyanine
  • thiazines eg, thionine, methylene blue, toluidine blue
  • acridines eg, acridine orange, chloroflavin, acriflavine
  • anthraquinones eg, anthraquinone
  • squalium eg, , Squalium
  • coumarins eg, 7-diethylamino-4-methylcoumarin.
  • sensitizer include compounds represented by the following formulas (IX) to (XIV).
  • a 1 represents a sulfur atom or NR 50
  • R 50 represents an alkyl group or an aryl group
  • L 2 forms a basic nucleus of the dye together with adjacent A 1 and an adjacent carbon atom.
  • R 51 and R 52 each independently represent a hydrogen atom or a monovalent nonmetallic atomic group, and R 51 and R 52 may be bonded to each other to form an acidic nucleus of the dye.
  • W represents an oxygen atom or a sulfur atom.
  • Ar 1 and Ar 2 each independently represent an aryl group and are linked via a bond with —L 3 —.
  • L 3 represents —O— or —S—.
  • W is synonymous with that shown in Formula (IX).
  • a 2 represents a sulfur atom or NR 59
  • L 4 represents a nonmetallic atomic group that forms a basic nucleus of the dye in combination with adjacent A 2 and a carbon atom
  • R 53 , R 54 , R 55 , R 56 , R 57 and R 58 each independently represent a monovalent nonmetallic atomic group
  • R 59 represents an alkyl group or an aryl group.
  • a 3 and A 4 each independently represent —S—, —NR 62 — or —NR 63 —, and R 62 and R 63 each independently represent a substituted or unsubstituted alkyl group, substituted or Represents an unsubstituted aryl group, and L 5 and L 6 each independently represent a nonmetallic atomic group that forms a basic nucleus of a dye in cooperation with adjacent A 3 , A 4, and adjacent carbon atoms, and R 60 , R 61 each independently represents a hydrogen atom or a monovalent nonmetallic atomic group, or may be bonded to each other to form an aliphatic or aromatic ring.
  • R 66 represents an aromatic ring or a hetero ring which may have a substituent
  • a 5 represents an oxygen atom, a sulfur atom or ⁇ NR 67
  • R 64 , R 65 and R 67 each independently represent a hydrogen atom or a monovalent non-metallic atomic group
  • R 67 and R 64 , and R 65 and R 67 each represent an aliphatic or aromatic ring. Can be combined to form.
  • R 68 and R 69 each independently represent a hydrogen atom or a monovalent nonmetallic atomic group.
  • R 70 and R 71 each independently represent a monovalent nonmetallic atomic group, and n represents an integer of 0 to 4. When n is 2 or more, R 70 and R 71 can be bonded to each other to form an aliphatic or aromatic ring.
  • an anthracene derivative is particularly preferable.
  • the sensitizer as described above may be a commercially available one or may be synthesized by a known synthesis method.
  • the content of the sensitizer is preferably 1 to 30% by mass, more preferably 3 to 20% by mass based on the total solid content of the photosensitive resin composition.
  • composition according to the present invention preferably contains a basic compound in order to reduce a change in performance over time from exposure to heating.
  • Preferred examples of the basic compound include compounds having a structure represented by the following formulas (A) to (E).
  • R 200 , R 201 and R 202 may be the same or different and are a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group (having a carbon number). 6-20), wherein R 201 and R 202 may combine with each other to form a ring.
  • R 203 , R 204 , R 205 and R 206 may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.
  • the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.
  • the alkyl groups in the general formulas (A) and (E) are more preferably unsubstituted.
  • Preferred compounds include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine and the like, and more preferred compounds include imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate Examples thereof include a compound having a structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, and an aniline derivative having a hydroxyl group and / or an ether bond.
  • Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, 2-phenylbenzimidazole and the like.
  • Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, and 1,8-diazabicyclo [5,4,0. ] Undecar 7-ene and the like.
  • Examples of the compound having an onium hydroxide structure include tetrabutylammonium hydroxide, triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris ( t-butylphenyl) sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide, and the like.
  • the compound having an onium carboxylate structure is a compound having an onium hydroxide structure in which the anion moiety is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate.
  • Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine.
  • aniline compounds include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutylaniline, N, N-dihexylaniline and the like.
  • alkylamine derivative having a hydroxyl group and / or an ether bond examples include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris (methoxyethoxyethyl) amine.
  • aniline derivatives having a hydroxyl group and / or an ether bond examples include N, N-bis (hydroxyethyl) aniline.
  • Preferred examples of the basic compound further include an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group.
  • amine compound a primary, secondary or tertiary amine compound can be used, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom is preferable.
  • the amine compound is more preferably a tertiary amine compound.
  • the amine compound has an cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (preferably having 3 to 20 carbon atoms).
  • 6 to 12 carbon atoms may be bonded to the nitrogen atom.
  • the amine compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed.
  • the number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6.
  • an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
  • ammonium salt compound a primary, secondary, tertiary, or quaternary ammonium salt compound can be used, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom is preferable.
  • the ammonium salt compound may be a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group, provided that at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to the nitrogen atom. (Preferably having 6 to 12 carbon atoms) may be bonded to a nitrogen atom.
  • the ammonium salt compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed.
  • the number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6.
  • an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
  • Examples of the anion of the ammonium salt compound include halogen atoms, sulfonates, borates, and phosphates. Among them, halogen atoms and sulfonates are preferable.
  • the halogen atom is particularly preferably chloride, bromide or iodide
  • the sulfonate is particularly preferably an organic sulfonate having 1 to 20 carbon atoms.
  • Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates.
  • the alkyl group of the alkyl sulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy groups, acyl groups, and aryl groups.
  • substituent include fluorine, chlorine, bromine, alkoxy groups, acyl groups, and aryl groups.
  • Specific examples of the alkyl sulfonate include methane sulfonate, ethane sulfonate, butane sulfonate, hexane sulfonate, octane sulfonate, benzyl sulfonate, trifluoromethane sulfonate, pentafluoroethane sulfonate, and nonafluorobutane sulfonate.
  • Examples of the aryl group of the aryl sulfonate include a benzene ring, a naphthalene ring and an anthracene ring.
  • the benzene ring, naphthalene ring and anthracene ring may have a substituent, and the substituent is preferably a linear or branched alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms.
  • linear or branched alkyl group and cycloalkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl, cyclohexyl and the like.
  • substituents include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.
  • An amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group are those having a phenoxy group at the terminal opposite to the nitrogen atom of the alkyl group of the amine compound or ammonium salt compound.
  • the phenoxy group may have a substituent.
  • the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, an acyloxy group, and an aryloxy group.
  • the substitution position of the substituent may be any of the 2-6 positions.
  • the number of substituents may be any in the range of 1 to 5.
  • oxyalkylene group between the phenoxy group and the nitrogen atom.
  • the number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6.
  • an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
  • the sulfonic acid ester group may be any of alkyl sulfonic acid ester, cycloalkyl group sulfonic acid ester, and aryl sulfonic acid ester.
  • the alkyl group has 1 to 20 carbon atoms
  • the cycloalkyl group has 3 to 20 carbon atoms
  • the aryl group has 6 carbon atoms.
  • Alkyl sulfonic acid ester, cycloalkyl sulfonic acid ester, and aryl sulfonic acid ester may have a substituent.
  • substituents include a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, and a sulfonic acid.
  • An ester group is preferred.
  • oxyalkylene group between the sulfonate group and the nitrogen atom.
  • the number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6.
  • an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
  • the following compounds are also preferable as the basic compound.
  • the composition according to the present invention may or may not contain a basic compound. However, when it is contained, the content of the basic compound is usually 0.001 to on the basis of the total solid content of the composition. It is 10% by mass, preferably 0.01-5% by mass.
  • the acid generator / basic compound (molar ratio) is more preferably from 5.0 to 200, still more preferably from 7.0 to 150.
  • the present invention may contain a thermal acid generator.
  • the thermal acid generator is a compound that generates an acid by heat, and is usually a compound having a thermal decomposition point in the range of 130 ° C. to 250 ° C., preferably 150 ° C. to 220 ° C., for example, sulfonic acid, It is a compound that generates a low nucleophilic acid such as carboxylic acid or disulfonylimide.
  • sulfonic acid, alkyl substituted with an electron withdrawing group or arylcarboxylic acid having a strong pKa of 2 or less, disulfonylimide substituted with an electron withdrawing group, and the like are preferable.
  • the electron withdrawing group examples include a halogen atom such as an F atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
  • the thermal acid generator is required not to be decomposed during storage time or in a pre-baking process after applying the composition, but to be quickly decomposed in a heat-curing process after patterning. Therefore, the thermal decomposition point is preferably 100 ° C to 300 ° C. More preferably, it is 120 ° C to 250 ° C, and further preferably 150 ° C to 200 ° C.
  • a photoacid generator that generates an acid by the above-described exposure can be applied.
  • Examples thereof include onium salts such as sulfonium salts and iodonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates, o-nitrobenzyl sulfonates and the like.
  • Preferred examples of the sulfonium salt include compounds represented by the following general formulas (TA-1) to (TA-3).
  • R T1 to R T5 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.
  • R T6 and R T7 each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.
  • R T8 and R T9 each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.
  • R T1 to R T5 , R T6 and R T7, and R T8 and R T9 may be bonded to each other to form a ring structure, and this ring structure includes an oxygen atom, a sulfur atom, a ketone A bond, an ester bond, or an amide bond may be included.
  • Examples of the group formed by combining any two or more of R T1 to R T5 , R T6 and R T7, and R T8 and R T9 include a butylene group and a pentylene group.
  • X ⁇ represents a non-nucleophilic anion, and has a strong pKa of 2 or less as described above, a sulfonic acid or an alkyl or aryl carboxylic acid substituted with an electron withdrawing group, or a disulfonylimide substituted with an electron withdrawing group.
  • Etc. are preferable.
  • the electron withdrawing group include a halogen atom such as an F atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
  • R T10 and R T11 each independently represent an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group.
  • R T10 and R T11 may be bonded to each other to form a ring structure, and this ring structure may contain an oxygen atom, a sulfur atom, a ketone bond, an ester bond, or an amide bond.
  • Examples of the group formed by combining R T10 and R T11 include a butylene group and a pentylene group.
  • R T12 to R T16 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a thioalkoxy group, or a hydroxyl group, and two or more of them are bonded to each other to form a naphthalene ring, an anthracene ring, etc.
  • a polycyclic aromatic ring may be formed.
  • X ⁇ represents a non-nucleophilic anion.
  • R T17 represents an alkyl group (straight chain or branched) or a cycloalkyl group, preferably a straight chain and branched alkyl group having 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms (for example, a methyl group, Ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group).
  • cycloalkyl group examples include not only a monocyclic cyclic alkyl group such as a cyclopentyl group and a cyclohexyl group, but also a cyclic alkyl group having a bridging site such as a norbornyl group, a tricyclodecanyl group, and an adamantyl group. it can.
  • R T18 and R T19 each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.
  • R T20 and R T21 each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.
  • R T18 and R T19 and R T20 and R T21 may be bonded to each other to form a ring structure, and this ring structure may contain an oxygen atom, a sulfur atom, a ketone bond, an ester bond, or an amide bond. Good.
  • Examples of the group formed by combining R T18 and R T19 and R T20 and R T21 include a butylene group and a pentylene group.
  • X ⁇ represents a non-nucleophilic anion.
  • the alkyl group as R T1 to R T17 may be linear or branched.
  • a linear or branched alkyl group having 1 to 20 carbon atoms, preferably 1 to 12 carbon atoms for example, Methyl group, ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group).
  • the cycloalkyl group as R T1 to R T17 is meant to include a monocyclic alkyl group as well as a polycyclic and cyclic alkyl group having a bridging site, and the cycloalkyl group as R T12 to R T16 is preferably Is a cycloalkyl group having 3 to 8 carbon atoms (eg, cyclopentyl group, cyclohexyl group).
  • the cycloalkyl group as R T17 has a cycloalkyl group having 3 to 8 carbon atoms (eg, cyclopentyl group, cyclohexyl group) and a cyclic group having a bridging site such as a norbornyl group, a tricyclodecanyl group, or an adamantyl group. Also preferred are alkyl groups.
  • the alkoxy group as R T1 to R T5 and R T12 to R T16 may be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably 1 to 1 carbon atoms. 5 linear and branched alkoxy groups (for example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), cyclic alkoxy groups having 3 to 8 carbon atoms (for example, , Cyclopentyloxy group, cyclohexyloxy group).
  • the thioalkoxy group as R T12 to R T16 may be linear, branched or cyclic, for example, a thioalkoxy group having 1 to 10 carbon atoms, preferably a linear or branched group having 1 to 5 carbon atoms.
  • a thioalkoxy group for example, a thiomethoxy group, a thioethoxy group, a linear or branched thiopropoxy group, a linear or branched thiobutoxy group, a linear or branched thiopentoxy group
  • a cyclic thioalkoxy group having 3 to 8 carbon atoms for example, thiocyclopentyl) Oxy group, thiocyclohexyloxy group).
  • the non-nucleophilic anion as X ⁇ is preferably an organic anion, and particularly preferably an organic anion represented by the following general formula.
  • Rc 1 represents an organic group.
  • the organic group for Rc 1 include those having 1 to 30 carbon atoms, and preferably an alkyl group, a cycloalkyl group, an aryl group, or a plurality of these optionally having a substituent is a single bond, —O. -, - CO 2 -, - S -, - SO 3 -, - SO 2 N (Rd 1) - can be exemplified linked group a linking group such as.
  • Rd 1 represents a hydrogen atom or an alkyl group.
  • Rc 2 represents 1-position an alkyl group substituted with a fluorine atom or a fluoroalkyl group.
  • Rc 3 and Rc 4 each independently represents an alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group. Preferably, it is a perfluoroalkyl group having 1 to 4 carbon atoms. Rc 3 and Rc 4 may be bonded to each other to form a ring. Examples of the group formed by combining Rc 3 and Rc 4 include an alkylene group, a cycloalkylene group, and an arylene group. A perfluoroalkylene group having 2 to 4 carbon atoms is preferred.
  • Preferred examples of the iodonium salt include compounds represented by the following general formula (TA-4).
  • R 41 and R 42 each have a hydrogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, or a substituent.
  • An alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, an acyloxy group which may have a substituent, a nitro group, a halogen atom, a hydroxyl group Represents a carboxyl group.
  • a represents 1 to 5
  • b represents 1 to 5.
  • R 41 and R 42 has an alkyl group having 5 or more carbon atoms, which may have a substituent, a cycloalkyl group which may have a substituent, or a substituent.
  • X represents R—SO 3
  • R represents an aliphatic hydrocarbon group which may have a substituent and an aromatic hydrocarbon group which may have a substituent.
  • alkyl group for R 41 and R 42 an optionally substituted methyl group, ethyl group, propyl group, n-butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, Examples thereof include those having 1 to 25 carbon atoms such as hexyl group, heptyl group, octyl group, t-amyl group, decanyl group, dodecanyl group and hexadecanyl group.
  • the cycloalkyl group has 3 to 25 carbon atoms which may have a substituent, such as cyclopropyl group, cyclopentyl group, cyclohexyl group, cyclooctyl group, cyclododecanyl group, cyclohexadecanyl group and the like. Things.
  • the alkoxy group may have a substituent such as methoxy group, ethoxy group, propoxy group, isopropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group or t-butoxy group, pentyloxy group, t Examples thereof include those having 1 to 25 carbon atoms such as -amyloxy group, n-hexyloxy group, n-octyloxy group, n-dodecanoxy group and the like.
  • alkoxycarbonyl group a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, an isopropoxycarbonyl group, an n-butoxycarbonyl group, an isobutoxycarbonyl group, a sec-butoxycarbonyl group or t which may have a substituent.
  • Those having 2 to 25 carbon atoms such as -butoxycarbonyl group, pentyloxycarbonyl group, t-amyloxycarbonyl group, n-hexyloxycarbonyl group, n-octyloxycarbonyl group, n-dodecanoxycarbonyl group, etc. Can be mentioned.
  • the acyl group may have a substituent and has 1 carbon atom such as formyl group, acetyl group, butyryl group, valeryl group, hexanoyl group, octanoyl group, t-butylcarbonyl group, t-amylcarbonyl group and the like. Up to 25 can be mentioned.
  • acyloxy group an acetoxy group, propionyloxy group, butyryloxy group, t-butyryloxy group, t-amylyloxy group, n-hexanecarbonyloxy group, n-octanecarbonyloxy group, which may have a substituent
  • substituent examples thereof include those having 2 to 25 carbon atoms such as n-dodecane carbonyloxy group, n-hexadecane carbonyloxy group, and the like.
  • halogen atom there can be mentioned a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.
  • an alkoxy group having 1 to 4 carbon atoms a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), an acyl group, an acyloxy group, a cyano group, a hydroxyl group, a carboxy group, An alkoxycarbonyl group, a nitro group, etc. can be mentioned.
  • R 1 and R 2 has 5 or more carbon atoms and may have a substituent, a cycloalkyl group that may have a substituent, An alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, an acyloxy group which may have a substituent .
  • substituent having 5 or more carbon atoms include those having 5 to 25 carbon atoms in the above specific examples.
  • examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a t-butyl group, and n-pentyl.
  • Group, t-amyl group, n-hexyl group, n-octyl group and decanyl group are preferable, and the cycloalkyl group is preferably a cyclohexyl group, cyclooctyl group or cyclododecanyl group which may have a substituent.
  • alkoxy group which may have a substituent
  • a methoxy group, an ethoxy group, an isopropoxy group, an n-butoxy group, a sec-butoxy group, a t-butoxy group, a pentyloxy group, a t-amyloxy group, n -Hexyloxy group, n-octyloxy group and n-dodecanoxy group are preferable
  • the alkoxycarbonyl group may be a methoxy group which may have a substituent.
  • Carbonyl group, ethoxycarbonyl group, isopropoxycarbonyl group, n-butoxycarbonyl group, sec-butoxycarbonyl group, t-butoxycarbonyl group, pentyloxycarbonyl group, t-amyloxycarbonyl group, n-hexyloxycarbonyl group, n -Octyloxycarbonyl group and n-dodecanoxycarbonyl group are preferred, and the acyl group may have a substituent, formyl group, acetyl group, butyryl group, valeryl group, hexanoyl group, octanoyl group, t-butyl A carbonyl group and a t-amylcarbonyl group are preferable, and the acyloxy group may have an acetoxy group, a propionyloxy group, a butyryloxy group, a t-butyryloxy group, a t-amylyloxy group
  • the alkyl group having 5 or more carbon atoms and optionally having a substituent is preferably an n-pentyl group, a t-amyl group, an n-hexyl group, an n-octyl group or a decanyl group.
  • the cycloalkyl group having 5 or more carbon atoms and optionally having a substituent is preferably a cyclohexyl group, a cyclooctyl group or a cyclododecanyl group.
  • the alkoxy group having 5 or more carbon atoms and optionally having a substituent is preferably a pentyloxy group, a t-amyloxy group, a hexyloxy group, an n-octyloxy group, or a dodecanoxy group.
  • Examples of the alkoxycarbonyl group having 5 or more carbon atoms which may have a substituent include a pentyloxycarbonyl group, a t-amyloxycarbonyl group, a hexyloxycarbonyl group, an n-octyloxycarbonyl group, and dodecaneoxycarbonyl. Groups are preferred.
  • the acyl group having 5 or more carbon atoms and optionally having a substituent is preferably a valeryl group, a hexanoyl group, an octanoyl group or a t-amylcarbonyl group.
  • Substituents for these groups include methoxy group, ethoxy group, t-butoxy group, chlorine atom, bromine atom, cyano group, hydroxyl group, methoxycarbonyl group, ethoxycarbonyl group, t-butoxycarbonyl group, t-amyloxycarbonyl group Groups are preferred.
  • the iodonium compound represented by formula (TA-4) used in the present invention uses sulfonic acid having a specific structure as described above as its counter anion, X ⁇ .
  • X ⁇ its counter anion
  • examples of the aliphatic hydrocarbon group which may have an R substituent in the counter anion include a linear or branched alkyl group having 1 to 20 carbon atoms, or a cyclic alkyl group.
  • R can mention the aromatic group which may have a substituent.
  • alkyl group for R examples include a methyl group, an ethyl group, a propyl group, an n-butyl group, an n-pentyl group, an n-hexyl group, an n-octyl group, and 2-ethylhexyl, which may have a substituent. And those having 1 to 20 carbon atoms such as a group, a decyl group and a dodecyl group.
  • Examples of the cyclic alkyl group include an optionally substituted cyclopentyl group, cyclohexyl group, cyclooctyl group, cyclododecyl group, adamantyl group, norbornyl group, camphor group, tricyclodecanyl group, menthyl group and the like. Can do.
  • Examples of the aromatic group include a phenyl group and a naphthyl group, which may have a substituent.
  • alkyl group which may have a substituent of R, a methyl group, a trifluoromethyl group, an ethyl group, a pentafluoroethyl group, a 2,2,2-trifluoroethyl group, n- Propyl group, n-butyl group, nonafluorobutyl group, n-pentyl group, n-hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, decyl group, dodecyl group, cyclic alkyl group A cyclopentyl group, a cyclohexyl group, and a camphor group can be mentioned.
  • substituents include a methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group, 4-hydroxy-1-naphthyl group, and 6-hydroxy-2-naphthyl group.
  • R 41 and R 42 are methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, n-pentyl group, t- Amyl group, n-hexyl group, n-octyl group, cyclohexyl group, methoxy group, ethoxy group, isopropoxy group, n-butoxy group, t-butoxy group, pentyloxy group, t-amyloxy group, hexyloxy group, n -Octyloxy group, methoxycarbonyl group, ethoxycarbonyl group, n-butoxycarbonyl group, t-butoxycarbonyl group, t-amyloxycarbonyl group, hexyloxycarbonyl group, n-octyloxycarbonyl group, formyl group, acetyl group,
  • more preferable groups having 5 or more carbon atoms include n-pentyl group, t-amyl group, n-hexyl group, n-octyl group, decanyl group, cyclohexyl group, pentyloxy group, t-amyloxy group, Hexyloxy group, n-octyloxy group, dodecaneoxy group, pentyloxycarbonyl group, t-amyloxycarbonyl group, hexyloxycarbonyl group, n-octyloxycarbonyl group, dodecanoxyoxycarbonyl group, valeryl group, hexanoyl group, octanoyl group A t-amylcarbonyl group, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octenecarbonyloxy group.
  • the more preferable sulfonic acid substituent R include methyl group, trifluoromethyl group, ethyl group, pentafluoroethyl group, 2,2,2-trifluoroethyl group, n-butyl group, nonafluorobutyl group, n-hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, camphor group, phenyl group, naphthyl group, pentafluorophenyl group, p-toluyl group, p-fluorophenyl group, p-chlorophenyl group P-methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group, 4-hydroxy-1-naphthyl group, 6-hydroxy-2-naphthyl group.
  • the total number of carbon atoms of the acid generated is preferably 1-30. More preferably, the number is 1 to 28, and still more preferably 1 to 25. If the total number of carbon atoms is less than 1, troubles such as poor resolution due to volatilization may occur, and if it exceeds 30, the development residue may be generated.
  • Specific examples of the compound represented by formula (TA-4) are shown below, but are not limited thereto. These compounds are used alone or in combination of two or more.
  • Examples of the imide sulfonate compound preferable as the thermal acid generator include compounds of the following general formula.
  • C 1 (carbon atom) and C 2 (carbon atom) are bonded by a single bond or a double bond
  • R 51 or R 52 may be the same or different
  • the following (1) to (4) Represents one of the following: (1) each independently a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, and (2) a monocyclic or polycyclic ring that may contain one or more heteroatoms together with C 1 and C 2 .
  • (3) represents a residue containing (4) N-sulfonyloxyimide that forms a condensed aromatic ring containing C 1 and C 2 .
  • R 53 represents an alkyl group, a halogenated alkyl group, a cyclic alkyl group, an alkenyl group, an aryl group which may have a substituent, an aralkyl group which may have a substituent, or a camphor group.
  • the alkyl group includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, Examples thereof include an alkyl group having 1 to 4 carbon atoms such as a tert-butyl group.
  • the cycloalkyl group include those having 3 to 8 carbon atoms such as cyclopropyl group, cyclopentyl group, cyclohexyl group, cyclooctyl group and the like.
  • aryl group examples include those having 6 to 14 carbon atoms such as phenyl group, tolyl group, xylyl group, mesityl group, and naphthyl group.
  • R 51 and R 52 correspond to the case (2), for example, the following partial structure can be given.
  • R 51 and R 52 correspond to the case of (3), for example, the following partial structure can be given.
  • R 55 and R 56 each represents a hydrogen atom or a methyl group.
  • M represents an integer of 1 to 4.
  • Examples of the alkyl group for R 53 include linear or branched alkyl groups having 1 to 20 carbon atoms. Preferred is a linear or branched alkyl group having 1 to 16 carbon atoms, and more preferred is one having 1 to 12 carbon atoms. In the case of an alkyl group having 21 or more carbon atoms, sensitivity and resolving power decrease, which is not preferable.
  • Examples of the halogenated alkyl group include those in which one or two or more hydrogen atoms of the alkyl group are halogenated. Examples of the halogen atom to be substituted include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
  • a fluorine atom a chlorine atom and a bromine atom
  • particularly preferred is a fluorine atom
  • the halogen atom to be substituted may be plural types per molecule.
  • the cyclic alkyl group include cycloalkyl groups having 3 to 12 carbon atoms such as cyclopropyl group, cyclopentyl group, cyclohexyl group, and cyclooctyl group, and polycyclic substituents such as norbornyl group, adamantyl group, and tricyclodecanyl group. I can give you.
  • the alkenyl group include linear or branched alkenyl groups having 2 to 20 carbon atoms.
  • a straight-chain or branched alkenyl group having 2 to 16 carbon atoms is preferable, and one having 2 to 12 carbon atoms is more preferable. In the case of an alkenyl group having 21 or more carbon atoms, sensitivity and resolving power decrease, which is not preferable.
  • Examples of the aryl group of R 53 include a phenyl group and a naphthyl group, and examples of the aralkyl group include a benzyl group.
  • Examples of the substituent of the aryl group and the aralkyl group include a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, and a tert-butyl group, a cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a phenyl group, a toluyl group, Aryl groups such as xylyl and mesityl groups, methoxy groups, ethoxy groups, propoxy groups, isopropoxy groups, sec-butoxy groups, tert-butoxy groups and other lower alkoxy groups, vinyl groups, allyl groups, propenyl groups, butenyl groups, etc.
  • an acyl group such as alkenyl group, formyl group and acetyl group, and halogen atoms such as hydroxy group, carboxy group, cyano group, nitro group, fluorine atom, chlorine atom, bromine atom and iodine atom.
  • a lower alkyl group such as a methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, cyclohexyl group, phenyl group, toluyl group, methoxy group, ethoxy group, propoxy group, isopropoxy group, sec-butoxy Group, lower alkoxy group such as tert-butoxy group, halogen atom such as cyano group, nitro group, fluorine atom, chlorine atom, bromine atom and iodine atom.
  • substituents on the aryl group and the aralkyl group may be used. Specific examples of these compounds are shown below, but are not limited thereto.
  • Preferred oxime sulfonate compounds as thermal acid generators include compounds of the following general formula.
  • R 61 and R 62 are an alkyl group, alkenyl group, alkynyl group, cycloalkyl group, cycloalkenyl group, substituted group which may have a substituent having 1 to 16 carbon atoms.
  • R 61 and R 62 are an alkylene chain, alkenylene chain, alkynylline chain, which may have a substituent having 2 to 8 carbon atoms, or phenylene, freelen, thienylene, which may have a substituent, It may be bonded to R 61 or R 62 of the compound represented by another general formula (TA-6) through a linking chain containing —O—, —S—, —N—, and —CO—. . That is, the compound represented by the general formula (TA-6) includes those having two or three oxime sulfonate structures via a linking chain.
  • R 63 represents an alkyl group, a cycloalkyl group, or an aryl group which may have a substituent, which may have a substituent having 1 to 16 carbon atoms.
  • alkyl group having 1 to 16 carbon atoms in R 61 to R 63 examples include a methyl group, an ethyl group, a propyl group, an i-propyl group, a butyl group, an i-butyl group, a t-butyl group, a t-amyl group, alkyl groups such as n-hexyl group, n-octyl group, i-octyl group, n-decyl group, undecyl group, dodecyl group, hexadecyl group, trifluoromethyl group, perfluoropropyl group, perfluorobutyl group, perfluoro-t- Examples thereof include a butyl group, a perfluorooctyl group, a perfluoroundecyl group, and a 1,1-bistrifluoromethylethyl group.
  • alkenyl group for R 61 and R 62 examples include allyl group, methallyl group, vinyl group, methylallyl group, 1-butenyl group, 3-butenyl group, 2-butenyl group, 1,3-pentadienyl group, 5-hexenyl group, Examples include 2-oxo-3-pentenyl group, decapentaenyl group, 7-octenyl group and the like.
  • alkynyl group in R 61 and R 62 examples include ethynyl group, propargyl group, 2-butynyl group, 4-hexynyl group, 2-octynyl group, phenylethynyl group, cyclohexylethynyl group and the like.
  • Examples of the cycloalkyl group in R 61 to R 63 include those having 3 to 8 carbon atoms, such as a cyclopropyl group, a cyclopentyl group, and a cyclohexyl group, which may have a substituent.
  • Examples of the cycloalkenyl group for R 61 and R 62 include a cyclobutenyl group, a cyclohexenyl group, a cyclopentadienyl group, a bicyclo [4.2.4] dodeca-3,7-dien-5-yl group, and the like.
  • Examples of the aryl group in R 61 to R 63 include those having 6 to 14 carbon atoms, such as phenyl group, tolyl group, methoxyphenyl group, and naphthyl group, which may have a substituent.
  • the above substituents include alkyl groups, cycloalkyl groups, alkoxy groups, halogen atoms (fluorine atoms, chlorine atoms, iodine atoms), cyano groups, hydroxy groups, carboxy groups, nitro groups, aryloxy groups, alkylthio groups, aralkyls. And groups represented by the following general formula (1A).
  • the alkyl group and the cycloalkyl group have the same meanings as described above.
  • the alkoxy group include those having 1 to 4 carbon atoms such as methoxy group, ethoxy group, hydroxyethoxy group, propoxy group, n-butoxy group, isobutoxy group, sec-butoxy group and t-butoxy group.
  • the aralkyl group include a benzyl group, a naphthylmethyl group, a furyl group, and a thienyl group.
  • R 61 and R 62 have the same meanings as R 61 and R 62 in formula (TA-6).
  • Preferred examples of the oxime sulfonate-based acid generator as the thermal acid generator include compounds having at least one group represented by the following general formula (TA-7).
  • R 70a and R 70b each independently represents an organic group.
  • the organic group of R 70a and R 70b is a group containing a carbon atom, and an atom other than a carbon atom (for example, a hydrogen atom, an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom (a fluorine atom, a chlorine atom, etc.)) You may have.
  • As the organic group for R 70a a linear, branched, or cyclic alkyl group or aryl group is preferable. These alkyl groups and aryl groups may have a substituent.
  • the substituent is not particularly limited, and examples thereof include a fluorine atom and a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms.
  • “having a substituent” means that part or all of the hydrogen atoms of the alkyl group or aryl group are substituted with a substituent.
  • the alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, still more preferably 1 to 8 carbon atoms, particularly preferably 1 to 6 carbon atoms, and most preferably 1 to 4 carbon atoms.
  • a partially or completely halogenated alkyl group (hereinafter sometimes referred to as a halogenated alkyl group) is particularly preferable.
  • the partially halogenated alkyl group means an alkyl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated alkyl group means that all of the hydrogen atoms are halogen atoms.
  • the aryl group preferably has 4 to 20 carbon atoms, more preferably 4 to 10 carbon atoms, and most preferably 6 to 10 carbon atoms.
  • a partially or completely halogenated aryl group is particularly preferable.
  • the partially halogenated aryl group means an aryl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated aryl group means that all of the hydrogen atoms are halogen atoms.
  • R 70a is particularly preferably an alkyl group having 1 to 4 carbon atoms having no substituent or a fluorinated alkyl group having 1 to 4 carbon atoms.
  • R 70b a linear, branched, or cyclic alkyl group, aryl group, or cyano group is preferable.
  • the alkyl group and aryl group for R 70b the same alkyl groups and aryl groups as those described above for R 70a can be used.
  • R 70b is particularly preferably a cyano group, an alkyl group having 1 to 8 carbon atoms having no substituent, or a fluorinated alkyl group having 1 to 8 carbon atoms.
  • a compound represented by the following general formula (TA-7a) or (TA-7b) is preferably used because of its high acid generation efficiency against electron beam irradiation.
  • m ′ is 0 or 1;
  • X is 1 or 2;
  • R 71 is a phenyl group, a heteroaryl group, or an alkyl group having 1 to 12 carbon atoms, or When m ′ is 0, an alkoxycarbonyl group having 2 to 6 carbon atoms, a phenoxycarbonyl group, CN (cyano group);
  • R 72 is synonymous with R 71 ;
  • R 73 ′ is 1 to 1 carbon atoms when X is 1;
  • R 74 and R 75 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms;
  • A is —S— , -O-, -N (R 76 )-.
  • R76 represents an alkyl group, an aryl group or an aral
  • R 71 ′ is an alkylene group having 2 to 12 carbon atoms; R 72 , R 74 , R 75 and A are as defined above; R 73 is an alkyl group having 1 to 18 carbon atoms. . ]
  • the following thiolene-containing oxime sulfonate is particularly preferable.
  • Preferred examples of the general formula of nitrobenzyl sulfonate include compounds represented by the general formula (TA-9).
  • Z in this formula is alkyl group, aryl group, alkylaryl group, halogen-substituted alkyl group, halogen-substituted aryl group, halogen-substituted alkylaryl group, nitro-substituted aryl group, nitro-substituted
  • Q m (NO ) is selected from groups having 2, R represents a hydrogen atom or a methyl group, R 'are selected from hydrogen atoms and methyl groups, and nitro substituted aryl groups, each Q is a hydrocarbon group, hydrocarbonoxy carboxymethyl Independently selected from the group, NO 2 , halogen atoms and organosilicon groups, the value of m being 0, 1
  • sulfonic acid esters can be used.
  • a sulfonic acid ester represented by the following general formula (TA-1) can be given.
  • R ′ and R ′′ are each independently a linear or branched alkyl group having 1 to 10 carbon atoms which may have a substituent or an optionally substituted carbon group having 6 carbon atoms.
  • Preferable specific examples of the sulfonic acid ester include the following.
  • TA-2 a compound represented by the following general formula (TA-2) is more preferable from the viewpoint of heat resistance.
  • the molecular weight of the sulfonate ester is generally 230 to 1000, preferably 230 to 800.
  • A represents an h-valent linking group.
  • R 0 represents an alkyl group, an aryl group, an aralkyl group, or a cyclic alkyl group.
  • R 0 ′ represents a hydrogen atom, an alkyl group, or an aralkyl group.
  • h represents an integer of 2 to 8.
  • the h-valent linking group as A includes, for example, an alkylene group (eg, methylene, ethylene, propylene, etc.), a cycloalkylene group (eg, cyclohexylene, cyclopentylene, etc.), an arylene group (1,2-phenylene, 1,3). -Phenylene, 1,4-phenylene, naphthylene, etc.), an ether group, a carbonyl group, an ester group, an amide group, and a group obtained by removing h-2 arbitrary hydrogen atoms from a divalent group combining these groups. Can be mentioned.
  • the carbon number of the h-valent linking group as A is generally 1 to 15, preferably 1 to 10, and more preferably 1 to 6.
  • the alkyl group for R 0 and R 0 ′ is generally an alkyl group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 15 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms. is there. Specific examples include methyl, ethyl, propyl, butyl, hexyl, octyl and the like.
  • the aralkyl group for R 0 and R 0 ′ is generally an aralkyl group having 7 to 25 carbon atoms, preferably an aralkyl group having 7 to 20 carbon atoms, more preferably an aralkyl group having 7 to 15 carbon atoms. is there.
  • the cyclic alkyl group for R 0 is generally a cyclic alkyl group having 3 to 20 carbon atoms, preferably a cyclic alkyl group having 4 to 20 carbon atoms, more preferably a cyclic alkyl group having 5 to 15 carbon atoms. is there. Specific examples include cyclopentyl, cyclohexyl, norbornyl, camphor group and the like.
  • the linking group as A may further have a substituent.
  • the substituent is an alkyl group (an alkyl group having 1 to 10 carbon atoms, specifically, methyl, ethyl, propyl, butyl, hexyl). Octyl, etc.), aralkyl groups (aralkyl groups having 7 to 15 carbon atoms, specifically benzyl, toluylmethyl, mesitylmethyl, phenethyl, etc.), aryl groups (aryl groups having 6 to 10 carbon atoms, specifically Are phenyl, toluyl, xylyl, mesityl, naphthyl, etc.), an alkoxy group (the alkoxy group may be linear, branched or cyclic, and has 1 to 10 carbon atoms, specifically, Methoxy, ethoxy, linear or branched propoxy, linear or branched butoxy, linear or branched pentoxy, cyclopentyloxy, cyclohexy
  • R 0 is preferably an alkyl group or an aryl group.
  • R 0 ′ is preferably a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, more preferably a hydrogen atom, a methyl group or an ethyl group, and most preferably a hydrogen atom.
  • Examples of the sulfonic acid ester of the present invention include the following specific compounds, but are not limited thereto.
  • sulfonic acid ester of the present invention a commercially available one may be used, or one synthesized by a known method may be used.
  • the sulfonic acid ester of the present invention can be synthesized, for example, by reacting sulfonyl chloride or sulfonic acid anhydride with a corresponding polyhydric alcohol under basic conditions.
  • the content of the thermal acid generator is preferably 1 to 20% by mass, more preferably 3 to 10% by mass based on the total solid content of the photosensitive resin composition.
  • composition of the present invention may contain a compound containing at least one of alkoxymethyl group and acyloxymethyl group. Even in the low-temperature curing process, it is possible to prevent melting and thermal shrinkage of the pattern during curing.
  • an alkoxymethyl group or an acyloxymethyl group a compound in which an alkoxymethyl group or an acyloxymethyl group is substituted directly on an aromatic group or a nitrogen atom of the following urea structure on a triazine
  • the alkoxymethyl group or acyloxymethyl group of the compound preferably has 2 to 5 carbon atoms, preferably 2 or 3 carbon atoms, and particularly preferably 2 carbon atoms.
  • the total number of alkoxymethyl groups and acyloxymethyl groups possessed by the compound is preferably 1 to 10, more preferably 2 to 8, and particularly preferably 3 to 6.
  • the molecular weight of the compound is preferably 1500 or less, and preferably 180 to 1200.
  • R 100 represents an alkyl group or an acyl group.
  • R 101 and R 102 independently represent a monovalent organic group, and may be bonded to each other to form a ring.
  • Examples of the compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted with an aromatic group include compounds having the following general formula.
  • X represents a single bond or a divalent organic group
  • each R 104 independently represents an alkyl group or an acyl group
  • R 103 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, Or a group that decomposes by the action of an acid to generate an alkali-soluble group (for example, a group that is eliminated by the action of an acid, a group represented by —C (R 4 ) 2 COOR 5 (R 4 is a hydrogen atom or a carbon number) Represents an alkyl group of 1 to 4, and R 5 represents a group capable of leaving by the action of an acid))).
  • R 105 each independently represents an alkyl group or an alkenyl group
  • a, b and c are each independently 1 to 3
  • d is 0 to 4
  • e is independently 0 to 3.
  • the group capable of decomposing by the action of an acid to generate an alkali-soluble group, the group leaving by the action of an acid, and the group represented by —C (R 4 ) 2 COOR 5 are the same as those in the general formula (1). is there.
  • Examples of the compound having an alkoxymethyl group include the following structures.
  • Examples of the compound having an acyloxymethyl group include compounds in which the alkoxymethyl group of the following compound is changed to an acyloxymethyl group.
  • Examples of the compound having an alkoxymethyl group or acyloxymethyl in the molecule include, but are not limited to, the following compounds.
  • the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group a commercially available product or a compound synthesized by a known method may be used. From the viewpoint of heat resistance, a compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring is preferable.
  • the addition amount of these compounds is preferably 1 to 20 parts by mass, and more preferably 3 to 15 parts by mass with respect to 100 parts by mass of the total amount of the resin of the present invention.
  • composition of the present invention may contain a compound containing methacryloyl group or acryloyl group.
  • the compound containing a methacryloyl group or an acryloyl group is a compound selected from the group consisting of acrylic acid esters and methacrylic acid esters. Since these compounds are insoluble in an alkaline developer, they have a function of suppressing the alkali solubility of the composition, and are useful for good image formation in order to suppress film loss in unexposed areas.
  • the molecular weight of components constituting the composition partially increases due to the reaction of the acrylic group or methacrylic group with the compound in the composition at the stage of the cure reaction.
  • the film properties are improved. Therefore, it is preferable to use a compound having two or more acryloyl groups and methacryloyl groups in one molecule, more preferably four or more functional groups, because this compound can exhibit a function as a crosslinking compound.
  • EO ethylene oxide
  • PO propylene oxide
  • NK-10 series made by Shin-Nakamura Chemical Co., Ltd., monofunctional AMP-10G, AMP-20GY, AM30G, AM90G, AM230G, ACB-3, A-BH, A-IB, A-SA, A -OC-18E, 720A, S-1800A, ISA, AM-130G, LA, M-20G, M-90G, M230G, PHE-1G, SA, CB-1, CB-3, CB-23, TOPOLENE-M , S-1800M, IB, OC-18E, S, bifunctional A-200, A-400, A-600, A-1000, ABE-300, A-BPE-4, A-BPE-10, A- BPE-20, A-BPE-30, A-BPP-3, A-DOD, A-DCP, A-IBD-2E, A-NPG, 701A, A-B1206PE, A-HD-N A-NOD-N, APG-100, APG-200
  • the addition amount of the compound containing a methacryloyl group or an acryloyl group in the molecule of the present invention is 0.5 parts by mass or more and 30 parts by mass or less with respect to 100 parts by mass of the resin having a repeating unit represented by the general formula (1). Is preferred. More preferably, they are 1 mass part or more and 20 mass parts or less, Most preferably, they are 2 mass parts or more and 15 mass parts or less.
  • an adhesion promoter such as an organosilicon compound, a silane coupling agent, and a leveling agent for imparting adhesion may be added as necessary.
  • an adhesion promoter such as an organosilicon compound, a silane coupling agent, and a leveling agent for imparting adhesion may be added as necessary. Examples of these are, for example, ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, vinyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryl.
  • an adhesion promoter it is preferably 0.1 to 20 parts by mass, more preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the resin of the present invention.
  • (G) Solvent The solvent is not particularly limited as long as it can dissolve the composition of the present invention. However, in order to prevent the solvent from evaporating more than necessary at the time of coating and precipitating the solid content of the composition at the time of coating, Solvents with the above boiling points are preferred. For example, alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate ester, alkyl alkoxypropionate, cyclic lactone (preferably having 4 to 10 carbon atoms), monoketone compound (preferably carbon And organic solvents such as alkylene carbonate, alkyl alkoxyacetate, alkyl pyruvate, and amide solvents.
  • alkylene glycol monoalkyl ether carboxylate examples include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl Preferred examples include ether propionate, ethylene glycol monomethyl ether acetate, and ethylene glycol monoethyl ether acetate.
  • alkylene glycol monoalkyl ether examples include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene glycol monomethyl ether, and ethylene glycol monoethyl ether.
  • alkyl lactate examples include methyl lactate, ethyl lactate, propyl lactate and butyl lactate.
  • alkyl alkoxypropionate examples include ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-methoxypropionate.
  • cyclic lactone examples include ⁇ -propiolactone, ⁇ -butyrolactone, ⁇ -butyrolactone, ⁇ -methyl- ⁇ -butyrolactone, ⁇ -methyl- ⁇ -butyrolactone, ⁇ -valerolactone, ⁇ -caprolactone, and ⁇ -octano.
  • Examples of the monoketone compound which may contain a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, 3-methyl-2-pentanone, 4-methyl-2-pentanone, 2 -Methyl-3-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexanone, 3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3-heptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4-heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 3-decanone, 4-decanone, 5-hexen-2-one 3-penten-2-one, cyclopentanone
  • alkylene carbonate examples include propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate.
  • alkyl alkoxyacetates examples include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, 3-methoxy-3-methylbutyl acetate, and 1-methoxy-acetate. 2-propyl is preferred.
  • Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate, and propyl pyruvate.
  • amide solvent examples include N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidinone, and 1,3-dimethyl-2-imidazolidinone.
  • dimethyl sulfoxide and sulfolane are preferable.
  • N-methylpyrrolidone (NMP), ⁇ -butyrolactone (GBL), N, N-dimethylacetamide (DMAc), 1,3-dimethyl-2-imidazolidinone (DMI) are more preferable solvents.
  • N, N-dimethylformamide (DMF) cyclopentanone, cyclohexanone, cycloheptanone and the like.
  • the total solid concentration in the photosensitive resin composition of the present invention is generally 10 to 40% by mass, more preferably 10 to 30% by mass, and still more preferably 15 to 30% by mass.
  • [Relief pattern manufacturing method] As a method for producing a relief pattern using the photosensitive resin composition of the present invention, (a) the photosensitive resin composition of the present invention is coated on an appropriate substrate to form a photosensitive film, and (b) The coated substrate is baked (pre-baked), (c) exposed with actinic light or radiation, (d) developed with an aqueous developer, and (e) cured to form a cured relief pattern. be able to.
  • —CO 2 R 3 in the general formula (1) is decomposed by the action of an acid to generate an alkali-soluble group, which is developed so as to be removed with an aqueous alkaline developer.
  • a positive cured relief pattern can be obtained.
  • the coated and exposed substrate can be baked at a high temperature (post-exposure baking) prior to development. Further, the developed substrate may be rinsed before curing.
  • the photosensitive resin composition of the present invention is applied on a semiconductor element so that the thickness after heat curing becomes a predetermined thickness (for example, 0.1 to 30 ⁇ m), prebaked, exposed, developed, and heat cured.
  • a predetermined thickness for example, 0.1 to 30 ⁇ m
  • the photosensitive resin composition of the present invention is coated on a suitable substrate.
  • the substrate is for example a semiconductor material such as a silicon wafer or a ceramic substrate, glass, metal or plastic.
  • Coating methods include, but are not limited to, spray coating, spin coating, offset printing, roller coating, screen printing, extrusion coating, meniscus coating, curtain coating, and dip coating.
  • the coating film is baked at a temperature of about 70 to 150 ° C. for several minutes to half an hour in order to evaporate the residual solvent. Subsequently, the resulting film is exposed to actinic rays or radiation through a mask.
  • actinic ray or radiation X-ray, electron beam, ultraviolet ray, visible ray or the like can be used.
  • the most preferred radiation is one having a wavelength of 365 nm (i-line) or 436 nm (g-line).
  • the exposed substrate is preferably heated at a temperature of about 70-150 ° C. Usually, it is heated at a predetermined temperature for several tens of seconds to several minutes. This method is referred to as post-exposure baking.
  • post-exposure baking a polyamic acid is produced from the polyamic acid ester in the general formula (1) as shown in the following scheme.
  • the coating film can be developed with an aqueous developer to obtain a relief pattern.
  • aqueous developer include inorganic alkali (eg, potassium hydroxide, sodium hydroxide, aqueous ammonia), primary amine (eg, ethylamine, n-propylamine), secondary amine (eg, diethylamine, di-n-propyl). Amines), tertiary amines (eg, triethylamine), alcohol amines (eg, triethanolamine), quaternary ammonium salts (eg, tetramethylammonium hydroxide, tetraethylammonium hydroxide), and alkaline solutions such as mixtures thereof Is mentioned.
  • the most preferred developer is one containing tetramethylammonium hydroxide.
  • an appropriate amount of a surfactant may be added to the developer. Development can be carried out by dipping, spraying, paddling, or other similar development methods.
  • the relief pattern may be rinsed using deionized water.
  • polyimide is produced from the polyamic acid ester by heat-curing the relief pattern as shown in the following scheme.
  • baking at a glass transition temperature Tg or higher of the polymer is preferable in order to obtain a polyimide having high heat resistance.
  • the heat curing temperature is preferably about 200 to 400 ° C, particularly preferably 250 to 400 ° C.
  • GPC measurement in the following is performed by directly connecting three HPC-8220GPC (manufactured by Tosoh), guard column: TSKguardcolumn SuperAW-H, column: TSKgel SuperAWM-H, column temperature of 50 ° C., and sample concentration of 0.5 mass%. Inject 20 ⁇ l of -2-pyrrolidone solution, and flow N-methyl-2-pyrrolidone solution (containing LiBr (10 mM) and H 3 PO 4 (10 mM)) as an elution solvent at a flow rate of 0.35 ml / min. This was done by detecting the sample peak with a detector. Mw and Mn were calculated using a calibration curve prepared using standard polystyrene.
  • reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 23.6 g of the desired product (resin P-3) as a white solid.
  • the solid was dissolved in deuterated DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 96%.
  • reaction solution was added to 1175 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.2 g of the desired product (resin P-8) as a white solid.
  • the solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 64%.
  • reaction solution was added to 947 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 13.5 g of the desired product (resin P-11) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 73%.
  • reaction solution was added to 940 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 16.5 g of the desired product (resin P-16) as a white solid.
  • the solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 69%.
  • Polyamic acid was synthesized in the same manner as P-1, and 79.19 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 39.18 g of NMP was added, and 19.92 g of the vinyl ether was added. 0.72 g of 10-camphorsulfonic acid was sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 705 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 15.1 g of the desired product (resin P-26) as a white solid.
  • Polyamic acid was synthesized in the same manner as P-1, and 79.19 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 39.18 g of NMP was added, and 19.36 g of the vinyl ether was added. 0.72 g of 10-camphorsulfonic acid was added sequentially. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 705 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 17.6 g of the desired product (resin P-26) as a white solid.
  • Polyamic acid was synthesized in the same manner as P-1, and 132.8 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 65.68 g of NMP was added and cooled to 0 ° C. or lower. 25.58 g of the above solution was added followed by 23.25 g of N, N-diisopropylethylamine. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1182 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 29.19 g of the desired product (resin P-29) as a white solid.
  • the reaction solution was added to 700 ml of methanol, and the precipitated solid was collected by filtration and further reslurried with 1000 ml of acetonitrile.
  • the solid was dissolved in 100 ml of NMP, 0.89 g of phthalic anhydride was added, and the mixture was stirred at 50 ° C. for 1 hour.
  • the reaction solution was added to 800 ml of methanol / 200 ml of water and dried to obtain 15.6 g of the desired product (resin P-31) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • the mixture was allowed to cool, neutralized with 600 ml of 1M hydrochloric acid, extracted with 1000 ml of ethyl acetate, and the organic layer was washed successively with saturated brine twice and water twice.
  • 500 ml of 1M NaOH was added, and the aqueous layer was extracted and washed with 300 ml of ethyl acetate.
  • the aqueous layer was neutralized with 500 ml of 1M-hydrochloric acid and extracted with 500 ml of ethyl acetate, and the organic layer was washed successively with saturated brine twice and with water twice.
  • the extract was dried over sodium sulfate and concentrated under reduced pressure to obtain 76.4 g of a dicarboxylic acid having the following structure.
  • reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 34.07 g of the desired product (resin P-34) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • a polyamic acid was synthesized in the same manner as P-1, and 142.3 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 70.38 g of NMP was added. 37.76 g of halide and 16.60 g of N, N-diisopropylethylamine were added. After reacting at room temperature for 7 hours, the reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 36.97 g of the desired product (resin P-36) as a brown solid.
  • Polyamic acid was synthesized in the same manner as P-1, and 133.10 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 65.87 g of NMP was added, and the above was performed at 0 ° C. or lower. 36.46 g of halide and 15.65 g of N, N-diisopropylethylamine were added. After reacting at room temperature for 8 hours, the reaction solution was added to 1186 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 41.21 g of the desired product (resin P-39) as a brown solid.
  • reaction solution was added to 1308 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 31.8 g of the desired product (resin P-47) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • reaction solution was added to 1047 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.5 g of the desired product (resin P-52) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • Polyamic acid was synthesized in the same manner as P-41, and 88.13 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen inlet tube, 74.20 g of NMP was added, and 9.63 g of the vinyl ether was added. 0.73 g of 10-camphorsulfonic acid was sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 786 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 12.6 g of the desired product (resin P-55) as a white solid.
  • reaction solution was added to 1218 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.1 g of the desired product (resin P-93) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 17.71 g of N, N-diisopropylethylamine was added, followed by 27.69 g of the transparent liquid for the compound represented by the structure (b5-1). After reacting at 0 ° C.
  • the obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under reduced pressure to obtain 97.2 g of a transparent liquid.
  • 97.2 g of a transparent liquid After adding 97.2 g of the above solution, 43.0 g of acetyl chloride, and 10 mg of zinc chloride in a 300 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, the mixture was reacted at room temperature for 8 hours, and then concentrated under reduced pressure. 93.8 g of a compound represented by the structure (b5-2) was obtained as a transparent liquid.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. 16.60 g of N, N-diisopropylethylamine was added, followed by 33.07 g of the transparent liquid for the compound represented by the structure (b5-2). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 23.86 g of the desired product (resin P-111) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
  • the endothermic peak top temperature was 210 ° C.
  • the weight reduction rate was 42%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 210 ° C.
  • a polyamic acid was synthesized in the same manner as P-41, and 260.4 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 129.2 g of NMP was added and cooled to 0 ° C. or lower.
  • N, N-diisopropylethylamine (36.55 g) was added, followed by 216.87 g of the transparent liquid for the compound represented by the structure (b5-3). After reacting at 0 ° C.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower.
  • N, N-diisopropylethylamine (16.60 g) was added, followed by 43.66 g of the clear liquid for the compound represented by the structure (b5-4). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.40 g of the desired product (resin P-113) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and it was 88%.
  • differential thermal balance analysis of the resin P-113 was performed, the endothermic peak top temperature was 177 ° C., and the weight loss rate was 46%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 177 ° C.
  • the obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under normal pressure to obtain 58.3 g of a transparent liquid.
  • a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube 58.3 g of the above solution, 42.0 g of acetyl chloride, and 10 mg of zinc chloride were added and reacted at 50 ° C. for 24 hours, and represented by the following structure (b5-5) 81.0 g of the resulting compound was obtained as a clear liquid.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 22.14 g of N, N-diisopropylethylamine was added, followed by 33.16 g of the transparent liquid for the compound represented by the structure (b5-5). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.12 g of the desired product (resin P-114) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and found to be 91%.
  • the endothermic peak top temperature was 163 ° C.
  • the weight reduction rate was 32%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 163 ° C.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 22.14 g of N, N-diisopropylethylamine was added, followed by 35.80 g of the transparent liquid for the compound represented by the structure (b5-6). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 19.76 g of the desired product (resin P-115) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured.
  • the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • the endothermic peak top temperature was 164 ° C.
  • the weight loss rate was 42%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 164 ° C.
  • a polyamic acid was synthesized in the same manner as P-41, and 250.0 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 124.0 g of NMP was added and cooled to 0 ° C. or lower. Then, 28.51 g of N, N-diisopropylethylamine was added, followed by 40.82 g of the transparent liquid for the compound represented by the structure (b5-9). After reacting at 0 ° C.
  • the reaction solution was added to 2.7 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 66.54 g of the desired product (resin P-118) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
  • the endothermic peak top temperature was 165 ° C.
  • the weight loss rate was 44%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 165 ° C.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.0 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 62.0 g of NMP was added and cooled to 0 ° C. or lower. 16.45 g of N, N-diisopropylethylamine was added, followed by 68.97 g of the clear liquid for the compound represented by the structure (b5-10). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 29.96 g of the desired product (resin P-120) as a white solid.
  • the solid was dissolved in deuterated DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 96%.
  • the endothermic peak top temperature was 162 ° C., and the weight loss rate was 50%.
  • This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 162 ° C. Furthermore, an endothermic peak that was considered to be an imide ring closure at 198 ° C. was also observed.
  • a polyamic acid was synthesized in the same manner as P-41, and 260.4 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 129.2 g of NMP was added and cooled to 0 ° C. or lower.
  • N, N-diisopropylethylamine (36.55 g) was added, and then 173.21 g of the transparent liquid for the compound represented by the structure (b5-11) was added. After reacting at 0 ° C.
  • the reaction solution was added to 3 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 64.02 g of the desired product (resin P-122) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • the endothermic peak top temperature was 163 ° C., and the weight reduction rate was 54%.
  • This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 163 ° C. Furthermore, an endothermic peak that was considered to be imide ring closure at 206 ° C. was also observed.
  • the obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under normal pressure to obtain 82.1 g of a transparent liquid.
  • a 200 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube 76.6 g of the above solution, 17.0 g of acetyl chloride and 10 mg of zinc chloride were added and reacted at 50 ° C. for 12 hours, and represented by the following structure (b5-14) 112.0 g of the resulting compound was obtained as a clear liquid.
  • Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 17.71 g of N, N-diisopropylethylamine was added, followed by 51.47 g of the transparent liquid for the compound represented by the structure (b5-14). After reacting at 0 ° C.
  • the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 15.27 g of the desired product (resin P-127) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • differential thermal balance analysis of the resin P-127 was performed, the endothermic peak top temperature was 230 ° C., and the weight reduction rate was 37%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 230 ° C.
  • reaction solution was added to 2.6 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 62.92 g of the desired product (resin P-130) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
  • reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 70.16 g of the desired product (resin P-131) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
  • reaction solution was added to 3 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 71.19 g of the desired product (resin P-133) as a white solid.
  • the solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
  • reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 73.07 g of the desired product (resin P-141) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 72.50 g of the desired product (resin P-143) as a white solid.
  • the solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
  • the prepared photosensitive resin composition was spin-coated on a 4 inch silicon wafer and pre-dried at 120 ° C. for 3 minutes on a hot plate to obtain a film having a thickness of 5.0 ⁇ m.
  • pattern exposure was performed using an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon, Inc.) using a 1-30 ⁇ m via hole repeating pattern mask. Subsequently, it was heated at 120 ° C. for 3 minutes, subjected to paddle development with a 2.38 mass% TMAH aqueous solution, and rinsed with pure water. Thereafter, heating was performed on a hot plate at 100 ° C. for 2 minutes.
  • the obtained pattern film was observed with a length measuring SEM (Hitachi Ltd. S-8840), and the resolved via hole had a minimum dimension of less than 3 ⁇ m A, 3 ⁇ m to 5 ⁇ m B, 5 ⁇ m to 10 ⁇ m C 10 ⁇ m or more was designated as D.
  • ⁇ Sensitivity> The obtained pattern film was observed with a length measurement SEM (Hitachi, Ltd. S-8840), and the exposure amount obtained by resolving the via hole having the smallest dimension was defined as sensitivity.
  • a less than 250 mJ / cm 2 was A, 250 mJ / cm 2 or more.
  • the prepared photosensitive resin composition was spin-coated on a 4 inch silicon wafer and pre-dried at 120 ° C. for 3 minutes on a hot plate to obtain a film having a thickness of 5.0 ⁇ m. Subsequently, the polyimide film was obtained by heat curing at 250 ° C. for 60 minutes under nitrogen. ⁇ Stress> The cured film was measured for stress at 25 ° C. with a thin film stress measuring device (FLX-2320, manufactured by Tencor). A smaller stress value means a smaller amount of wafer warpage.
  • the numerical value in parentheses when using a solvent together represents a mass ratio.
  • DIA 2,6-diisopropylaniline
  • PEA N-phenyldiethanolamine
  • DBU 1,8-diazabicyclo [5.4.0] undec-7-ene
  • EOA amine having the following structure
  • GPTMS 3-glycidyloxypropyltrimethoxysilane
  • MAPTMS 3-methacryloxypropyltrimethoxysilane
  • TESPEC triethoxysilylpropyl ethyl carbamate
  • GBL ⁇ -butyrolactone
  • NMP N-methylpyrrolidone
  • CX cyclohexanone
  • CP cycloheptanone
  • DMI 1,3-dimethyl-2-imidazolidinone
  • DPHA Dipentaerythritol hexaacrylate
  • Comparative Example 1 having an acid-decomposable group as R 3 in the general formula (1) but not having an alicyclic group as R 2 has a solubility in an alkali developer. It can be seen that sufficient results cannot be obtained with respect to image performance such as resolution and sensitivity. It can also be seen that the wafer is warped due to the large stress. Comparative Example 2 having an alicyclic group as R 2 but not having an acid-decomposable group as R 3 does not reveal even a latent image, and gives satisfactory results for image performance such as resolution and sensitivity. I can't understand. It can also be seen that the wafer is warped due to the large stress.
  • Comparative Example 3 having an acid-decomposable group as R 3 in the general formula (1) but not having an alicyclic group as R 2 , the image performance such as resolution and sensitivity is relatively good, but the stress is large. It can be seen that wafer warpage can occur.
  • Examples 1 to 146 using the resin (a) satisfying the requirement of the general formula (1) are excellent in image performance such as resolution and sensitivity, have small stress, and can suppress the occurrence of wafer warpage. .
  • a surface protective film for semiconductor devices an interlayer insulating film, an interlayer insulating film for display devices, has lithography performance with excellent resolution and sensitivity, and has low stress in low-temperature curing.
  • a relief pattern forming material a photosensitive film, a polyimide film, a cured relief pattern, a manufacturing method thereof, and a semiconductor device including the cured relief pattern, which have excellent characteristics and can form a cured relief pattern that prevents warpage of the wafer. can do.

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Abstract

Provided are: a photosensitive resin composition which has lithographic performance including excellent resolution and excellent sensitivity and enables the formation of a cured relief pattern that has low stress and therefore can prevent the warpage of a wafer in so-called low-temperature curing; a material for forming a relief pattern, a photosensitive film, a polyimide film, a cured relief pattern and a method for producing the cured relief pattern, each of which utilizes the photosensitive resin composition; and a semiconductor device involving the cured relief pattern. A photosensitive resin composition comprising (a) a resin having a repeating unit represented by general formula (1) and (b) a compound capable of generating an acid upon the irradiation with an active ray or a radioactive ray. In general formula (1), R1's independently represent a tetravalent organic group, wherein the multiple R1's may be the same as or different from each other; R2's independently represent a bivalent organic group, wherein the multiple R2's may be the same as or different from each other, and wherein at least one of the multiple R2's is a bivalent organic group having an alicyclic group; and R3's independently represent a hydrogen atom or an organic group, wherein at least one of multiple -CO2R3 groups is a group capable of being decomposed by the action of an acid to produce an alkali-soluble group.

Description

感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び半導体装置Photosensitive resin composition, relief pattern forming material, photosensitive film, polyimide film, cured relief pattern, manufacturing method thereof, and semiconductor device
 本発明は半導体装置の表面保護膜、層間絶縁膜、表示デバイス用の層間絶縁膜として使用されるポジ型高耐熱性感光性樹脂組成物、該ポジ型高耐熱性感光性樹脂組成物を用いた耐熱性を有する硬化レリーフパターンの製造方法及びレリーフパターンを含有する半導体装置に関するものである。 The present invention uses a positive type high heat resistant photosensitive resin composition used as a surface protective film for semiconductor devices, an interlayer insulating film, an interlayer insulating film for display devices, and the positive type high heat resistant photosensitive resin composition. The present invention relates to a method for producing a cured relief pattern having heat resistance and a semiconductor device containing the relief pattern.
 半導体装置の表面保護膜、層間絶縁膜には、優れた耐熱性と電気特性、機械特性などを併せ持つネガ型ポリイミド樹脂が用いられている。このネガ型ポリイミド樹脂は、現在は一般に感光性ポリイミド前駆体組成物の形で供され、塗布、活性光線によるパターニング、有機溶剤現像、高温で熱イミド化処理等を施すことによって、半導体装置上に表面保護膜、層間絶縁膜等を容易に形成させることが出来、従来の非感光性ポリイミド前駆体組成物に比べて大幅な工程短縮が可能となるという特徴を有している。
 ところが、感光性のネガ型ポリイミド前駆体組成物は、その現像工程において、現像液としてN-メチル-2-ピロリドンなどの大量の有機溶剤を用いる必要があり、近年の環境問題の高まりなどから、脱有機溶剤対策が求められてきている。これを受け、最近になって、フォトレジストと同様に、アルカリ性水溶液で現像可能な耐熱性感光性樹脂材料の提案が各種なされている。
A negative polyimide resin having excellent heat resistance, electrical characteristics, mechanical characteristics, and the like is used for a surface protective film and an interlayer insulating film of a semiconductor device. This negative polyimide resin is generally provided in the form of a photosensitive polyimide precursor composition, and is applied on a semiconductor device by coating, patterning with actinic rays, organic solvent development, thermal imidization treatment at high temperature, and the like. A surface protective film, an interlayer insulating film, and the like can be easily formed, and the process can be greatly shortened as compared with a conventional non-photosensitive polyimide precursor composition.
However, the photosensitive negative polyimide precursor composition needs to use a large amount of an organic solvent such as N-methyl-2-pyrrolidone as a developing solution in the development process. Measures to remove organic solvents have been demanded. In response, recently, various heat-resistant photosensitive resin materials that can be developed with an alkaline aqueous solution have been proposed in the same manner as photoresists.
 中でも、アルカリ性水溶液可溶性のポリアミック酸(ポリイミド前駆体)、あるいはヒドロキシポリアミド(ポリベンズオキサゾール)前駆体を、感光性ジアゾキノン化合物などの光活性成分と混合した組成物をポジ型感光性樹脂組成物として用いる方法が、近年注目されている。
 このポジ型感光性樹脂の現像メカニズムは、未露光部の感光性ジアゾキノン化合物がアルカリ性水溶液に不溶であるのに対し、露光することにより該感光性ジアゾキノン化合物が化学変化を起こしインデンカルボン酸化合物となってアルカリ性水溶液に可溶となることを利用したものである。この露光部と未露光部の間の現像液に対する溶解速度の差を利用し、未露光部のみのレリーフパターンの形成が可能となる(例えば、特許文献1参照)。
 他方、感光性と未露光部の不溶性の機能を分離する技術として、半導体フォトレジストの分野では露光で触媒量の酸を発生させ、引き続く加熱プロセスにより組成物中のアルカリ不溶の基を露光で発生した酸を触媒とする化学反応でアルカリ可溶の基に変換する化学増幅型の感光性組成物が数多く適用されている。本技術分野に於いても、化学増幅型の感光性組成物が開示されている(例えば、特許文献2参照)。特に、高解像性、高感度等の観点から、酸分解性の特定の保護基で保護されたポリイミド前駆体を含有する化学増幅型の感光性樹脂組成物が開示されている(例えば、特許文献3、4参照)。
 一方、近年の半導体技術の発展に伴い、より微細なパターンの形成及びパターン形成後の硬膜温度(キュア温度)を下げる要求がある。
 しかしキュア温度を下げた場合、イミド環化が進行しにくくなることが知られている。この問題に関しては、例えばスルホン酸、スルホン酸エステル化合物等を添加することにより改善されることが既に報告されている(特許文献5)。しかし、得られた膜の強度や耐薬品性が不足する、あるいは微細な画像形成能を損なう場合もあることがわかった。
 また、近年のシリコンウエハの大口径化、積層化に伴い、ポリイミド膜を形成したシリコンウエハの反り(以下、単に「ウエハ反り」ともいう。)の問題も顕在化している。これはポリイミドとシリコンウエハの熱膨張係数差から発生する残留応力が原因と考えられており、従って従来のポリイミドよりも低熱膨張性、低応力(低ストレス)性のポリイミドが強く求められている(例えば、非特許文献1参照)。ポリイミド主鎖を直線かつ剛直構造にすることにより低熱膨張性は達成できるが(非特許文献2参照)、このような構造ではその前駆体のi線透過性、溶剤溶解性、アルカリ溶解性が低く、十分なリソグラフィー性能を付与させる事が出来ないなどの問題点があった。例えば、特許文献6は、放射線照射により酸を発生する化合物とPBO前駆体を含むポジ型感光性組成物であって、前記PBO前駆体により形成されるポリベンゾオキサゾール膜の残留応力が25MPa以下であるPBO前駆体を含有するポジ型感光性組成物を開示しているが、感度、プロファイルなどのリソグラフィー性能に種々の問題が存在する。
Among them, a composition in which an alkaline aqueous solution-soluble polyamic acid (polyimide precursor) or hydroxypolyamide (polybenzoxazole) precursor is mixed with a photoactive component such as a photosensitive diazoquinone compound is used as a positive photosensitive resin composition. The method has attracted attention in recent years.
The development mechanism of this positive photosensitive resin is that the photosensitive diazoquinone compound in the unexposed area is insoluble in the alkaline aqueous solution, but when exposed, the photosensitive diazoquinone compound undergoes a chemical change to become an indenecarboxylic acid compound. It makes use of being soluble in an alkaline aqueous solution. By utilizing the difference in the dissolution rate with respect to the developer between the exposed portion and the unexposed portion, it is possible to form a relief pattern only in the unexposed portion (for example, see Patent Document 1).
On the other hand, as a technology that separates the photosensitive and insoluble areas of the unexposed area, the semiconductor photoresist field generates a catalytic amount of acid during exposure, and the subsequent heating process generates alkali-insoluble groups during exposure. Many chemically amplified photosensitive compositions that convert to an alkali-soluble group by a chemical reaction using an acid as a catalyst have been applied. Also in this technical field, a chemically amplified photosensitive composition is disclosed (for example, see Patent Document 2). In particular, from the viewpoint of high resolution, high sensitivity, etc., a chemically amplified photosensitive resin composition containing a polyimide precursor protected with a specific acid-decomposable protecting group has been disclosed (for example, patents). References 3 and 4).
On the other hand, with the development of semiconductor technology in recent years, there is a demand for forming a finer pattern and lowering the hardening temperature (curing temperature) after pattern formation.
However, it is known that when the cure temperature is lowered, imide cyclization hardly proceeds. It has already been reported that this problem can be improved by adding, for example, a sulfonic acid or a sulfonic acid ester compound (Patent Document 5). However, it has been found that the strength and chemical resistance of the obtained film may be insufficient or the fine image forming ability may be impaired.
In addition, with the recent increase in diameter and lamination of silicon wafers, the problem of warpage of silicon wafers formed with a polyimide film (hereinafter also simply referred to as “wafer warpage”) has become apparent. This is thought to be due to the residual stress generated from the difference in thermal expansion coefficient between the polyimide and silicon wafer. Therefore, a low thermal expansion and low stress (low stress) polyimide is strongly demanded compared to conventional polyimide ( For example, refer nonpatent literature 1). Low thermal expansion can be achieved by making the polyimide main chain a straight and rigid structure (see Non-Patent Document 2), but in such a structure, the precursor has low i-line permeability, solvent solubility, and alkali solubility. There is a problem that sufficient lithography performance cannot be imparted. For example, Patent Document 6 is a positive photosensitive composition containing a compound that generates an acid upon irradiation and a PBO precursor, and the residual stress of the polybenzoxazole film formed by the PBO precursor is 25 MPa or less. Although a positive photosensitive composition containing a certain PBO precursor is disclosed, there are various problems in lithography performance such as sensitivity and profile.
日本国特開昭56-27140号公報Japanese Unexamined Patent Publication No. 56-27140 日本国特開2002-526793号公報Japanese Laid-Open Patent Publication No. 2002-526793 日本国特開2009-244479号公報Japanese Unexamined Patent Publication No. 2009-244479 日本国特開2009-192760号公報Japanese Unexamined Patent Publication No. 2009-192760 日本国特開2006-010781号公報Japanese Laid-Open Patent Publication No. 2006-010881 日本国特開2001-214055号公報Japanese Laid-Open Patent Publication No. 2001-214055
 本発明は、解像性及び感度に優れたリソグラフィー性能を有し、300℃以下(好ましくは250℃以下)の低温での硬化、いわゆる低温キュアにおいて、応力が低いことによりウエハ反りを防止する硬化レリーフパターンを形成することができる感光性樹脂組成物、該感光性樹脂組成物を用いる、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び該硬化レリーフパターンを含む半導体装置を提供することを目的とする。 The present invention has lithography performance with excellent resolution and sensitivity, and cures at a low temperature of 300 ° C. or lower (preferably 250 ° C. or lower), that is, curing at a low temperature to prevent wafer warpage due to low stress. A photosensitive resin composition capable of forming a relief pattern, a relief pattern forming material, a photosensitive film, a polyimide film, a cured relief pattern, a production method thereof, and the cured relief pattern using the photosensitive resin composition An object is to provide a semiconductor device.
 本発明は、下記の構成であり、これにより本発明の上記課題が解決される。
〔1〕
(a)下記一般式(1)で表される繰り返し単位を有する樹脂、及び
(b)活性光線又は放射線の照射により酸を発生する化合物を含有する感光性樹脂組成物。
The present invention has the following configuration, which solves the above-described problems of the present invention.
[1]
(A) A photosensitive resin composition comprising a resin having a repeating unit represented by the following general formula (1), and (b) a compound that generates an acid upon irradiation with actinic rays or radiation.
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
 上記一般式(1)中、
 Rは、4価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 Rは、2価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 但し複数のRのうち少なくとも1つは脂環基を有する2価の有機基である。
 Rは、各々独立に、水素原子又は有機基を表す。
 但し複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
〔2〕
 前記一般式(1)で表される繰り返し単位を有する樹脂(a)が、下記一般式(2)で表される繰り返し単位と、下記一般式(3)で表される繰り返し単位とを有する樹脂である、〔1〕に記載の感光性樹脂組成物。
In the general formula (1),
R 1 represents a tetravalent organic group. Several R < 1 > may mutually be same or different.
R 2 represents a divalent organic group. A plurality of R 2 may being the same or different.
However, at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
R 3 each independently represents a hydrogen atom or an organic group.
However, at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
[2]
Resin in which the resin (a) having a repeating unit represented by the general formula (1) has a repeating unit represented by the following general formula (2) and a repeating unit represented by the following general formula (3) The photosensitive resin composition according to [1].
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
 上記一般式(2)中、
 R’は、前記一般式(1)におけるRと同義である。
 R’は、前記一般式(1)におけるRと同義である。
 但し複数の-CO’のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
 Rは、脂環基を有する2価の有機基である。
 上記一般式(3)中、
 R”は、前記一般式(1)におけるRと同義である。
 R”は、前記一般式(1)におけるRと同義である。
 但し複数の-CO”のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
 Rは、Rとは異なる2価の有機基である。
〔3〕
 前記一般式(3)におけるRが芳香族基を有する2価の基である、〔2〕に記載の感光性樹脂組成物。
〔4〕
 前記一般式(3)におけるRが下記式のいずれかで表される2価の基である、〔3〕に記載の感光性樹脂組成物。
In the general formula (2),
R 1 'has the same meaning as R 1 in the general formula (1).
R 3 'has the same meaning as R 3 in Formula (1).
However, at least one of the plurality of —CO 2 R 3 ′ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
R 4 is a divalent organic group having an alicyclic group.
In the general formula (3),
R 1 "has the same meaning as R 1 in the general formula (1).
R 3 "has the same meaning as R 3 in Formula (1).
However, at least one of the plurality of —CO 2 R 3 ″ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
R 5 is a divalent organic group different from R 4 .
[3]
The photosensitive resin composition according to [2], wherein R 5 in the general formula (3) is a divalent group having an aromatic group.
[4]
The photosensitive resin composition according to [3], wherein R 5 in the general formula (3) is a divalent group represented by any of the following formulas.
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
 上記式中、各芳香環の水素原子が、各々独立に、フッ素原子、塩素原子、臭素原子、メチル基、メトキシ基、シアノ基、フェニル基及びトリフルオロメチル基からなる群より選ばれた少なくとも1種の原子又は基によって置換されていてもよい。
〔5〕
 前記一般式(1)における-CO、前記一般式(2)における-CO’又は前記一般式(3)における-CO”の熱分解温度が100~220℃である、〔1〕~〔4〕のいずれか1項に記載の感光性樹脂組成物。
〔6〕
 前記一般式(1)における-CO、前記一般式(2)における-CO’又は前記一般式(3)における-CO”についての酸の作用により分解しアルカリ可溶性基を生じる基が、カルボキシル基の水素原子が下記一般式(III)で表される基で置換されたエステル基である、〔1〕~〔5〕のいずれか1項に記載の感光性樹脂組成物。
In the above formula, at least one hydrogen atom of each aromatic ring is independently selected from the group consisting of fluorine atom, chlorine atom, bromine atom, methyl group, methoxy group, cyano group, phenyl group and trifluoromethyl group. It may be substituted by a species atom or group.
[5]
The thermal decomposition temperature of —CO 2 R 3 in the general formula (1), —CO 2 R 3 ′ in the general formula (2) or —CO 2 R 3 ″ in the general formula (3) is 100 to 220 ° C. The photosensitive resin composition according to any one of [1] to [4].
[6]
-CO 2 R 3 in the general formula (1), decomposing the alkali-soluble by an acid action of the -CO 2 R 3 "in -CO 2 R 3 'or the general formula (3) in the general formula (2) The photosensitive resin according to any one of [1] to [5], wherein the group that generates a group is an ester group in which a hydrogen atom of a carboxyl group is substituted with a group represented by the following general formula (III): Composition.
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
 上記一般式中、
 Raは、水素原子、アルキル基、シクロアルキル基、アリール基又はアラルキル基を表す。
 Rbは、単結合又は2価の連結基を表す。
 Qは、アルキル基、ヘテロ原子を含んでいてもよい脂環基、又はヘテロ原子を含んでいてもよい芳香環基を表す。
 Ra、Rb及びQの少なくとも2つは、互いに結合して環を形成していてもよい。
〔7〕
 前記一般式(III)におけるRaが、下記一般式(IV)又は(V)で表される基である、〔6〕に記載の感光性樹脂組成物。
In the above general formula,
Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
Rb represents a single bond or a divalent linking group.
Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom.
At least two of Ra, Rb and Q may be bonded to each other to form a ring.
[7]
The photosensitive resin composition according to [6], wherein Ra in the general formula (III) is a group represented by the following general formula (IV) or (V).
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
 上記一般式中、
 Rc、Rd、Re、Rf及びRgは、各々独立に、アルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子を表し、Rc及びRdが互いに結合して環を形成していてもよく、Re、Rf及びRgの少なくとも2つが互いに結合して環を形成していてもよい。
〔8〕
 前記一般式(IV)におけるRc及びRdの少なくとも1つが、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子である、〔7〕に記載の感光性樹脂組成物。
〔9〕
 前記一般式(IV)におけるRc及びRdの少なくとも1つが、アリール基である、〔8〕に記載の感光性樹脂組成物。
〔10〕
 前記一般式(III)におけるRa、Rb及びQの少なくとも1つが、電子求引性基ないしは電子求引性基を有する基である、〔6〕に記載の感光性樹脂組成物。
〔11〕
 前記一般式(1)におけるRが単環式又は縮合多環式の脂肪族基又は芳香族基を有する4価の連結基である、〔1〕に記載の感光性樹脂組成物。
〔12〕
 前記一般式(1)におけるRが、脂環基を有する2価の基、芳香族基を有する2価の基又はケイ素原子を含有する2価の基である、〔1〕又は〔11〕に記載の感光性樹脂組成物。
In the above general formula,
Rc, Rd, Re, Rf and Rg each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group or a halogen atom. Rc and Rd may be bonded to each other to form a ring, or at least two of Re, Rf and Rg may be bonded to each other to form a ring.
[8]
In the general formula (IV), at least one of Rc and Rd is a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom. 7]. The photosensitive resin composition as described in 7].
[9]
The photosensitive resin composition according to [8], wherein at least one of Rc and Rd in the general formula (IV) is an aryl group.
[10]
The photosensitive resin composition according to [6], wherein at least one of Ra, Rb and Q in the general formula (III) is an electron-withdrawing group or a group having an electron-withdrawing group.
[11]
The photosensitive resin composition according to [1], wherein R 1 in the general formula (1) is a tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group.
[12]
Wherein R 2 is in the general formula (1), a divalent group, the divalent group containing a divalent group or a silicon atom having an aromatic group having an alicyclic group, [1] or [11] The photosensitive resin composition as described in 2.
〔13〕
 前記樹脂(a)の質量平均分子量が20万以下である、〔1〕~〔12〕のいずれか1項に記載の感光性樹脂組成物。
〔14〕
 (c)塩基性化合物を更に含有する、〔1〕~〔13〕のいずれか1項に記載の感光性樹脂組成物。
〔15〕
 前記化合物(b)が、オキシム化合物である、〔1〕~〔14〕のいずれか1項に記載の感光性樹脂組成物。
〔16〕
 (f)密着促進剤を更に含有する、〔1〕~〔15〕のいずれか1項に記載の感光性樹脂組成物。
〔17〕
 ポジ型現像用である、〔1〕~〔16〕のいずれか1項に記載の感光性樹脂組成物。
〔18〕
 〔1〕~〔16〕のいずれか1項に記載の感光性樹脂組成物であるパターン形成材料。〔19〕
 〔1〕~〔16〕のいずれか1項に記載の感光性樹脂組成物により形成される感光性膜。〔20〕
 〔1〕~〔16〕のいずれか1項に記載の感光性樹脂組成物を加熱処理して得られるポリイミド膜。
〔21〕
 (ア)〔19〕に記載の感光性膜を基板上に形成する工程、
 (イ)該感光性膜を活性光線又は放射線で露光する工程、
 (ウ)該感光性膜の露光された部分を水性アルカリ現像液で除去するように現像する工程、及び
 (エ)得られたレリーフパターンを加熱処理する工程を有する硬化レリーフパターンの製造方法。
〔22〕
 〔21〕に記載の製造方法により得られた硬化レリーフパターン。
〔23〕
 〔22〕に記載の硬化レリーフパターンを具備する半導体装置。
〔24〕
 下記一般式(1)で表される繰り返し単位を有する樹脂。
[13]
The photosensitive resin composition according to any one of [1] to [12], wherein the resin (a) has a mass average molecular weight of 200,000 or less.
[14]
(C) The photosensitive resin composition according to any one of [1] to [13], further containing a basic compound.
[15]
The photosensitive resin composition according to any one of [1] to [14], wherein the compound (b) is an oxime compound.
[16]
(F) The photosensitive resin composition according to any one of [1] to [15], further comprising an adhesion promoter.
[17]
The photosensitive resin composition according to any one of [1] to [16], which is for positive development.
[18]
[1] A pattern forming material which is the photosensitive resin composition according to any one of [16]. [19]
[1] A photosensitive film formed of the photosensitive resin composition according to any one of [16]. [20]
[1] A polyimide film obtained by heat-treating the photosensitive resin composition according to any one of [16].
[21]
(A) forming a photosensitive film according to [19] on a substrate;
(A) a step of exposing the photosensitive film with actinic rays or radiation;
(C) A process for developing the photosensitive film so as to remove the exposed portion with an aqueous alkaline developer, and (d) a method for producing a cured relief pattern comprising a step of heat-treating the obtained relief pattern.
[22]
A cured relief pattern obtained by the production method according to [21].
[23]
[22] A semiconductor device comprising the cured relief pattern according to [22].
[24]
Resin which has a repeating unit represented by following General formula (1).
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
 上記一般式(1)中、
 Rは、4価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 Rは、2価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 但し複数のRのうち少なくとも1つは脂環基を有する2価の有機基である。
 Rは、各々独立に、水素原子又は有機基を表す。
 但し複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
In the general formula (1),
R 1 represents a tetravalent organic group. Several R < 1 > may mutually be same or different.
R 2 represents a divalent organic group. A plurality of R 2 may being the same or different.
However, at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
R 3 each independently represents a hydrogen atom or an organic group.
However, at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
 本発明の感光性樹脂組成物は、解像性及び感度に優れたリソグラフィー性能を有し、いわゆる低温キュアにおいて、応力が低いことによりウエハ反りを防止する硬化レリーフパターンを形成することができる。
 本発明によれば、解像性及び感度に優れたリソグラフィー性能を有し、いわゆる低温キュアにおける低応力特性に優れ、ウエハ反りを防止する硬化レリーフパターンを形成することができる、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び該硬化レリーフパターンを含む半導体装置を提供することができる。
The photosensitive resin composition of the present invention has lithography performance with excellent resolution and sensitivity, and can form a cured relief pattern that prevents wafer warpage due to low stress in so-called low-temperature curing.
According to the present invention, a relief pattern forming material having lithography performance with excellent resolution and sensitivity, excellent low stress characteristics in so-called low temperature cure, and capable of forming a cured relief pattern that prevents wafer warpage, A photosensitive film, a polyimide film, a cured relief pattern, a manufacturing method thereof, and a semiconductor device including the cured relief pattern can be provided.
 本明細書に於ける基(原子団)の表記に於いて、置換及び無置換を記していない表記は、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば、「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。
 本明細書中における「活性光線」又は「放射線」とは、例えば、水銀灯の輝線スペクトル、エキシマレーザーに代表される遠紫外線、極紫外線(EUV光)、X線、電子線(EB)等を意味する。また、本発明において光とは、活性光線又は放射線を意味する。
 また、本明細書中における「露光」とは、特に断らない限り、水銀灯、エキシマレーザーに代表される遠紫外線、極紫外線、X線、EUV光などによる露光のみならず、電子線、イオンビーム等の粒子線による描画も露光に含める。
In the description of the group (atomic group) in this specification, the notation which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the present specification, “active light” or “radiation” means, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays represented by excimer laser, extreme ultraviolet rays (EUV light), X-rays, electron beams (EB), etc. To do. In the present invention, light means actinic rays or radiation.
In addition, “exposure” in the present specification is not limited to exposure to far ultraviolet rays, extreme ultraviolet rays, X-rays, EUV light and the like represented by mercury lamps and excimer lasers, but also electron beams, ion beams, etc., unless otherwise specified. The exposure with the particle beam is also included in the exposure.
 本発明の感光性樹脂組成物は、(a)下記一般式(1)で表される繰り返し単位を有する樹脂、及び
(b)活性光線又は放射線の照射により酸を発生する化合物を含有する。
The photosensitive resin composition of the present invention contains (a) a resin having a repeating unit represented by the following general formula (1), and (b) a compound that generates an acid upon irradiation with actinic rays or radiation.
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
 上記一般式(1)中、
 Rは、4価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 Rは、2価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
 但し複数のRのうち少なくとも1つは脂環基を有する2価の有機基である。
 Rは、各々独立に、水素原子又は有機基を表す。
 但し複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
In the general formula (1),
R 1 represents a tetravalent organic group. Several R < 1 > may mutually be same or different.
R 2 represents a divalent organic group. A plurality of R 2 may being the same or different.
However, at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
R 3 each independently represents a hydrogen atom or an organic group.
However, at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
 前記一般式(1)で表される繰り返し単位を有する樹脂(a)を含有する本発明の感光性樹脂組成物が、解像性及び感度に優れたリソグラフィー性能を有し、いわゆる低温キュアにおいて、応力が低いことによりウエハ反りを防止する硬化レリーフパターンを形成することができる理由は定かではないが以下のように推定される。
 前記一般式(1)で表される繰り返し単位は熱硬化することにより直線的かつ剛直なポリイミドを形成することができ、更に樹脂(a)中に複数存在するRのうち少なくとも1つを脂環基を有する2価の有機基とすることにより直線性及び剛直性を向上させることができる。これにより、熱膨張性を特に低くすることができ、低応力を達成できウエハ反りを防止することができるものと推定される。
 更に樹脂(a)中に複数存在するRのうち少なくとも1つが脂環基を有する2価の有機基であることにより、露光時のi線などの光透過性が損なわれずに、解像性及び感度に優れたリソグラフィー性能を達成するものと推定される。
The photosensitive resin composition of the present invention containing the resin (a) having a repeating unit represented by the general formula (1) has lithography performance with excellent resolution and sensitivity. In so-called low temperature curing, The reason why it is possible to form a cured relief pattern that prevents wafer warpage due to low stress is not clear, but is estimated as follows.
The repeating unit represented by the general formula (1) can form a linear and rigid polyimide by thermosetting, and at least one of a plurality of R 2 present in the resin (a) is a fat. Linearity and rigidity can be improved by using a divalent organic group having a cyclic group. Thereby, it is presumed that the thermal expansibility can be particularly lowered, low stress can be achieved, and wafer warpage can be prevented.
Further, since at least one of R 2 present in the resin (a) is a divalent organic group having an alicyclic group, the light transmission property such as i-line at the time of exposure is not impaired and the resolution is improved. It is estimated that the lithography performance with excellent sensitivity is achieved.
(a)一般式(1)の繰り返し単位を有する樹脂
 前記一般式(1)で表される繰り返し単位を有する樹脂(a)は、酸の作用によりアルカリ現像液に対する溶解度が増大する樹脂である。一般式(1)の繰り返し単位を有する樹脂は、好ましくはアルカリ現像液に不溶又は難溶性である。
(A) Resin having a repeating unit of the general formula (1) The resin (a) having a repeating unit represented by the general formula (1) is a resin whose solubility in an alkaline developer is increased by the action of an acid. The resin having the repeating unit of the general formula (1) is preferably insoluble or hardly soluble in an alkali developer.
 一般式(1)で表される繰り返し単位は、Rを核として4個のカルボキシル基を有する化合物、そのカルボン酸無水物、又は前記4個のカルボキシル基のうちの少なくとも1つにおける水素原子が酸の作用により脱離する基で置換されてなる化合物に由来する酸成分と、Rを核として2個のアミノ基を有する化合物に由来するジアミン成分とから構成される。換言すると、前記一般式(1)中の2つのカルボニル基で挟まれた該2つのカルボニル基を含む部分構造である酸成分と、前記一般式(1)中の-NH-R-NH-で表される部分構造であるジアミン成分とから構成される。
 4価の有機基Rとしては、炭素数4~30であることが好ましく、単環式又は縮合多環式の脂肪族基又は芳香族基を有する4価の連結基であることがより好ましい。樹脂(a)中に複数存在するRは互いに同一であっても異なっていてもよい。
 4価の有機基Rにおける単環式の芳香族基としては、ベンゼン環基、ピリジン環基等が挙げられる。
 4価の有機基Rにおける縮合多環式の芳香族基としては、ナフタレン環基、ペリレン環基などが挙げられる。
 4価の有機基Rにおける単環式の脂肪族基としては、シクロブタン環基、シクロペンタン環基、シクロへキサン環基などが挙げられる。
 4価の有機基Rにおける縮合多環式の脂肪族基としては、ビシクロ[2.2.1]へプタン環基、ビシクロ[2.2.2]オクタン環基、ビシクロ[2.2.2]オクト-7-エン環基などが挙げられる。
 4価の有機基Rについての単環式又は縮合多環式の脂肪族基又は芳香族基を有する4価の連結基としては、前述の単環式又は縮合多環式の脂肪族基又は芳香族基そのものであってもよいが、複数の単環式又は縮合多環式の脂肪族基又は芳香族基が単結合ないしは2価の連結基を介して連結して、Rとしての4価の連結基を形成していてもよい。
 前記2価の連結基としては、アルキレン基(炭素数1~6のアルキレン基が好ましく、例えば、メチレン基、エチレン基、プロピレン基など)、酸素原子、イオウ原子、2価のスルホン基、エステル結合、ケトン基、アミド基などが挙げられる。
The repeating unit represented by the general formula (1) includes a compound having four carboxyl groups with R 1 as a nucleus, a carboxylic acid anhydride thereof, or a hydrogen atom in at least one of the four carboxyl groups. It is composed of an acid component derived from a compound substituted with a group capable of leaving by the action of an acid and a diamine component derived from a compound having two amino groups with R 2 as a nucleus. In other words, an acid component which is a partial structure containing two carbonyl groups sandwiched between two carbonyl groups in the general formula (1), and —NH—R 2 —NH— in the general formula (1) It is comprised from the diamine component which is the partial structure represented by these.
The tetravalent organic group R 1 preferably has 4 to 30 carbon atoms, and more preferably a tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group. . A plurality of R 1 present in the resin (a) may be the same or different.
Examples of the monocyclic aromatic group in the tetravalent organic group R 1 include a benzene ring group and a pyridine ring group.
Examples of the condensed polycyclic aromatic group in the tetravalent organic group R 1 include a naphthalene ring group and a perylene ring group.
Examples of the monocyclic aliphatic group in the tetravalent organic group R 1 include a cyclobutane ring group, a cyclopentane ring group, and a cyclohexane ring group.
Examples of the condensed polycyclic aliphatic group in the tetravalent organic group R 1 include a bicyclo [2.2.1] heptane ring group, a bicyclo [2.2.2] octane ring group, and a bicyclo [2.2. 2] Oct-7-ene ring group and the like.
As the tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group for the tetravalent organic group R 1 , the above-mentioned monocyclic or condensed polycyclic aliphatic group or The aromatic group itself may be used, but a plurality of monocyclic or condensed polycyclic aliphatic groups or aromatic groups are linked via a single bond or a divalent linking group, and 4 as R 1 A valent linking group may be formed.
The divalent linking group is preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, such as a methylene group, an ethylene group, or a propylene group), an oxygen atom, a sulfur atom, a divalent sulfone group, or an ester bond. , Ketone group, amide group and the like.
 Rを核として少なくとも4個のカルボキシル基に由来する基を有する酸成分の具体例としては、ピロメリット酸無水物、3,3’,4,4’-ビフェニルテトラカルボン酸無水物、2,3,3’,4’-ビフェニルテトラカルボン酸無水物、2,2’,3,3’-ビフェニルテトラカルボン酸無水物、3,3’,4,4’-ベンゾフェノンテトラカルボン酸無水物、2,2’,3,3’-ベンゾフェノンテトラカルボン酸無水物、4,4’-
(ヘキサフルオロイソプロピリデン)二フタル酸無水物、1,2,5,6-ナフタレンテトラカルボン酸無水物、2,3,6,7-ナフタレンテトラカルボン酸無水物、2,3,5,6-ピリジンテトラカルボン酸無水物、3,4,9,10-ペリレンテトラカルボン酸無水物、(トリフルオロメチル)ピロメリット酸無水物、ジ(トリフルオロメチル)ピロメリット酸無水物、ジ(ヘプタフルオロプロピル)ピロメリット酸無水物、ペンタフルオロエチルピロメリット酸無水物、ビス〔3、5-ジ(トリフルオロメチル)フェノキシ〕ピロメリット酸無水物、3,3’,4,4’-テトラカルボキシジフェニルエーテル二無水物、2,3’,3,4’-テトラカルボキシジフェニルエーテル二無水物、3,3’,4,4’-テトラカルボキシジフェニルメタン二無水物、3,3’,4,4’-テトラカルボキシジフェニルスルホン二無水物、2,2-ビス(3,4-ジカルボキシフェニル)プロパン二無水物、2,2-ビス(3,4-ジカルボキシフェニル)ヘキサフルオロプロパン二無水物、5,5’-ビス(トリフルオロメチル)-3,3’,4,4’-テトラカルボキシビフェニル二無水物、2,2’,5,5’-テトラキス(トリフルオロメチル)-3,3’,4,4’-テトラカルボキシビフェニル二無水物、5,5’-ビス(トリフルオロメチル)-3,3’,4,4’-テトラカルボキシジフェニルエーテル二無水物、5,5’-ビス(トリフルオロメチル)-3,3’,4,4’-テトラカルボキシベンゾフェノン二無水物、ビス〔(トリフルオロメチル)ジカルボキシフェノキシ〕ベンゼン二無水物、ビス(ジカルボキシフェノキシ)ビス(トリフルオロメチル)ベンゼン二無水物、ビス(ジカルボキシフェノキシ)テトラキス(トリフルオロメチル)ベンゼン二無水物、2,2-ビス〔4-(3,4-ジカルボキシフェノキシ)フェニル〕プロパン二無水物、2,2-ビス(4-(3,4-ジカルボキシフェノキシ)フェニル)ヘキサフルオロプロパン二無水物、5,5’-[p-フェニレンビス(オキシカルボニル)]ジ無水フタル酸などの芳香族テトラカルボン酸無水物に由来する成分や、
 シクロブタンテトラカルボン酸無水物、シクロペンタンテトラカルボン酸無水物、シクロヘキサンテトラカルボン酸無水物、1,2,4,5-シクロヘキサンテトラカルボン酸、ビシクロ[2.2.1]へプタン-2,3,5,6-テトラカルボン酸、ビシクロ[2.2.2]オクタン-2,3,5,6-テトラカルボン酸、又はビシクロ[2.2.2]オクト-7-エン-2,3,5,6-テトラカルボン酸、ビシクロ[2.2.2]オクタン-2,3,5,6-テトラカルボン酸二無水物、(1S,2S,4R,5R)-シクロヘキサンテトラカルボン酸二無水物、(1R,2S,4S,5R)-シクロヘキサンテトラカルボン酸二無水物などの脂肪族テトラカルボン酸無水物に由来する成分などを挙げることができる。
Specific examples of the acid component having a group derived from at least four carboxyl groups with R 1 as a nucleus include pyromellitic acid anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride, 2, 3,3 ′, 4′-biphenyltetracarboxylic anhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic anhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic anhydride, 2 , 2 ′, 3,3′-benzophenonetetracarboxylic anhydride, 4,4′-
(Hexafluoroisopropylidene) diphthalic anhydride, 1,2,5,6-naphthalenetetracarboxylic anhydride, 2,3,6,7-naphthalenetetracarboxylic anhydride, 2,3,5,6- Pyridinetetracarboxylic anhydride, 3,4,9,10-perylenetetracarboxylic anhydride, (trifluoromethyl) pyromellitic anhydride, di (trifluoromethyl) pyromellitic anhydride, di (heptafluoropropyl) ) Pyromellitic anhydride, pentafluoroethylpyromellitic anhydride, bis [3,5-di (trifluoromethyl) phenoxy] pyromellitic anhydride, 3,3 ′, 4,4′-tetracarboxydiphenyl ether Anhydride, 2,3 ′, 3,4′-tetracarboxydiphenyl ether dianhydride, 3,3 ′, 4,4′-tetracarboxydiphe Lumethane dianhydride, 3,3 ′, 4,4′-tetracarboxydiphenylsulfone dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (3 4-Dicarboxyphenyl) hexafluoropropane dianhydride, 5,5′-bis (trifluoromethyl) -3,3 ′, 4,4′-tetracarboxybiphenyl dianhydride, 2,2 ′, 5,5 '-Tetrakis (trifluoromethyl) -3,3', 4,4'-tetracarboxybiphenyl dianhydride, 5,5'-bis (trifluoromethyl) -3,3 ', 4,4'-tetracarboxy Diphenyl ether dianhydride, 5,5′-bis (trifluoromethyl) -3,3 ′, 4,4′-tetracarboxybenzophenone dianhydride, bis [(trifluoromethyl) dicarboxyphenoxy] benzene Anhydrous, bis (dicarboxyphenoxy) bis (trifluoromethyl) benzene dianhydride, bis (dicarboxyphenoxy) tetrakis (trifluoromethyl) benzene dianhydride, 2,2-bis [4- (3,4- Dicarboxyphenoxy) phenyl] propane dianhydride, 2,2-bis (4- (3,4-dicarboxyphenoxy) phenyl) hexafluoropropane dianhydride, 5,5 ′-[p-phenylenebis (oxycarbonyl) )] Components derived from aromatic tetracarboxylic anhydrides such as diphthalic anhydride,
Cyclobutanetetracarboxylic acid anhydride, cyclopentanetetracarboxylic acid anhydride, cyclohexanetetracarboxylic acid anhydride, 1,2,4,5-cyclohexanetetracarboxylic acid, bicyclo [2.2.1] heptane-2,3, 5,6-tetracarboxylic acid, bicyclo [2.2.2] octane-2,3,5,6-tetracarboxylic acid, or bicyclo [2.2.2] oct-7-ene-2,3,5 , 6-tetracarboxylic acid, bicyclo [2.2.2] octane-2,3,5,6-tetracarboxylic dianhydride, (1S, 2S, 4R, 5R) -cyclohexanetetracarboxylic dianhydride, Examples thereof include components derived from aliphatic tetracarboxylic anhydrides such as (1R, 2S, 4S, 5R) -cyclohexanetetracarboxylic dianhydride.
 好ましくは、ピロメリット酸無水物に由来する成分、3,3’,4,4’-ビフェニルテトラカルボン酸無水物に由来する成分、2,3,3’,4’-ビフェニルテトラカルボン酸無水物に由来する成分、2,2’,3,3’-ビフェニルテトラカルボン酸無水物に由来する成分、3,3’,4,4’-ベンゾフェノンテトラカルボン酸無水物に由来する成分、4,4’-(ヘキサフルオロイソプロピリデン)二フタル酸無水物に由来する成分、3,3’,4,4’-テトラカルボキシジフェニルエーテル二無水物に由来する成分、1,2,5,6-ナフタレンテトラカルボン酸無水物に由来する成分、5,5’-[p-フェニレンビス(オキシカルボニル)]ジ無水フタル酸に由来する成分、シクロブタンテトラカルボン酸無水物に由来する成分、シクロペンタンテトラカルボン酸無水物に由来する成分、ビシクロ[2.2.2]オクタン-2,3,5,6-テトラカルボン酸二無水物に由来する成分、(1S,2S,4R,5R)-シクロヘキサンテトラカルボン酸二無水物に由来する成分、(1R,2S,4S,5R)-シクロヘキサンテトラカルボン酸二無水物に由来する成分であり、
 より好ましくはピロメリット酸無水物に由来する成分、3,3’,4,4’-ビフェニルテトラカルボン酸無水物に由来する成分、4,4’-(ヘキサフルオロイソプロピリデン)二フタル酸無水物に由来する成分、シクロブタンテトラカルボン酸無水物に由来する成分、3,3’,4,4’-テトラカルボキシジフェニルエーテル二無水物に由来する成分、シクロペンタンテトラカルボン酸無水物に由来する成分、5,5’-[p-フェニレンビス(オキシカルボニル)]ジ無水フタル酸に由来する成分、(1S,2S,4R,5R)-シクロヘキサンテトラカルボン酸二無水物に由来する成分、(1R,2S,4S,5R)-シクロヘキサンテトラカルボン酸二無水物に由来する成分である。これらを使用することによって良好な溶剤溶解性、アルカリ溶解速度、透明性、応力特性が実現できる。
 Rを核として4個のカルボキシル基を有する化合物などに由来する酸成分の樹脂(a)における含有量としては、樹脂(a)を構成する全繰り返し単位に対して20~70モル%であることが好ましく、30~60モル%であることがより好ましい。
Preferably, a component derived from pyromellitic acid anhydride, a component derived from 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic acid anhydride A component derived from 2,2 ′, 3,3′-biphenyltetracarboxylic anhydride, a component derived from 3,3 ′, 4,4′-benzophenonetetracarboxylic anhydride, 4,4 Component derived from '-(hexafluoroisopropylidene) diphthalic anhydride, component derived from 3,3', 4,4'-tetracarboxydiphenyl ether dianhydride, 1,2,5,6-naphthalenetetracarboxylic A component derived from an acid anhydride, a component derived from 5,5 ′-[p-phenylenebis (oxycarbonyl)] diphthalic anhydride, a component derived from cyclobutanetetracarboxylic anhydride, Component derived from tantetracarboxylic anhydride, component derived from bicyclo [2.2.2] octane-2,3,5,6-tetracarboxylic dianhydride, (1S, 2S, 4R, 5R)- A component derived from cyclohexanetetracarboxylic dianhydride, a component derived from (1R, 2S, 4S, 5R) -cyclohexanetetracarboxylic dianhydride,
More preferably, a component derived from pyromellitic anhydride, a component derived from 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride, 4,4 ′-(hexafluoroisopropylidene) diphthalic anhydride A component derived from cyclobutanetetracarboxylic anhydride, a component derived from 3,3 ′, 4,4′-tetracarboxydiphenyl ether dianhydride, a component derived from cyclopentanetetracarboxylic anhydride, 5 , 5 ′-[p-phenylenebis (oxycarbonyl)] diphthalic anhydride component, (1S, 2S, 4R, 5R) -cyclohexanetetracarboxylic dianhydride component, (1R, 2S, It is a component derived from 4S, 5R) -cyclohexanetetracarboxylic dianhydride. By using these, good solvent solubility, alkali dissolution rate, transparency, and stress characteristics can be realized.
The content of the acid component derived from the compound having four carboxyl groups with R 1 as a nucleus in the resin (a) is 20 to 70 mol% with respect to all repeating units constituting the resin (a). It is preferably 30 to 60% by mole.
 2価の有機基Rとしては、脂環基を有する2価の基、芳香族基を有する2価の基、ケイ素原子を含有する2価の基などが挙げられる。樹脂(a)中に複数存在するRは互いに同一であっても異なっていてもよい。
 以下、Rが脂環基を有する2価の基のときのRを核とするジアミン成分を、脂環ジアミン成分ということもあり、Rが芳香族基を有する2価の基のときのRを核とするジアミン成分を、芳香族ジアミン成分ということもあり、Rがケイ素原子を含有する2価の基のときのRを核とするジアミン成分を、シリコンジアミン成分ということもある。
Examples of the divalent organic group R 2 include a divalent group having an alicyclic group, a divalent group having an aromatic group, and a divalent group containing a silicon atom. A plurality of R 2 present in the resin (a) may be the same or different.
Hereinafter, when R 2 is a divalent group having an alicyclic group, the diamine component having R 2 as a nucleus is sometimes referred to as an alicyclic diamine component, and when R 2 is a divalent group having an aromatic group. the diamine component of R 2 to the core of, sometimes called the aromatic diamine component, the diamine component of the R 2 at the core when the divalent group R 2 contains a silicon atom, that silicon diamine There is also.
 樹脂(a)中に複数存在するジアミン成分中のRのうち少なくとも1つは脂環基を有する2価の基である。樹脂(a)が脂環基を有するジアミン成分を含有することによって良好な溶剤溶解性、アルカリ溶解速度、透明性、感度が実現できる。
 Rが有し得る脂環基としては、炭素数3~20の2価の脂環基が好ましく、シクロペンチレン基、シクロヘキシレン基などの単環のシクロアルキレン基、ビシクロ[2.2.1]ヘプチレン基、ノルボルニレン基、テトラシクロデカニレン基、テトラシクロドデカニレン基、アダマンチレン基などの多環のシクロアルキレン基などを挙げることができる。
 Rについての脂環基を有する2価の基としては、前記脂環基そのものであってもよいが、複数の脂環基がアルキレン基(炭素数1~6のアルキレン基が好ましく、例えば、メチレン基、エチレン基、プロピレン基など)で連結して、Rとしての脂環基を有する2価の基を形成していてもよく、ジアミン成分中のアミノ基と脂環基とがアルキレン基で連結していてもよい。
 脂環基を有する2価の基を構成し得る前記脂環基、アルキレン基は置換基を有していてもよく、そのような置換基としてアルキル基(好ましくは炭素数1~4のアルキル基)、ハロゲン原子などが挙げられる。
 特に好ましいRを核とする脂環基構造をもつジアミン成分としては5-アミノ-1,3,3-トリメチルシクロヘキサンメチルアミン成分、cis-1,4-シクロヘキサンジアミン成分、trans-1,4-シクロヘキサンジアミン成分、1,4-シクロヘキサンジアミン成分(cis、trans混合物)、4,4’-メチレンビス(シクロヘキシルアミン)成分及びその3,3’-ジメチル置換体、ビス(アミノメチル)ビシクロ[2.2.1]ヘプタン成分、1,3-ジアミノアダマンタン成分、3,3’-ジアミノ-1,1’-ビアダマンチル成分、4,4’-ヘキサフルオロイソプロピリデンビス(シクロヘキシルアミン)成分が挙げられ、この内3,3’-ジアミノ-1,1’-ビアダマンチル成分、trans-1,4-シクロヘキサンジアミン成分が応力を低くする観点から好ましい。
 Rを核として2個のアミノ基を有する脂環ジアミン成分の樹脂(a)中の含有量としては、樹脂(a)を構成する全繰り返し単位に対して20~70モル%であることが好ましく、30~60モル%であることがより好ましい。
At least one of R 2 in the diamine component present in the resin (a) is a divalent group having an alicyclic group. When the resin (a) contains a diamine component having an alicyclic group, good solvent solubility, alkali dissolution rate, transparency, and sensitivity can be realized.
The alicyclic group that R 2 may have is preferably a divalent alicyclic group having 3 to 20 carbon atoms, such as a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or bicyclo [2.2. 1] Polycyclic cycloalkylene groups such as a heptylene group, norbornylene group, tetracyclodecanylene group, tetracyclododecanylene group, adamantylene group, and the like can be given.
The divalent group having an alicyclic group for R 2 may be the alicyclic group itself, but a plurality of alicyclic groups are preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, for example, Methylene group, ethylene group, propylene group, etc.) may be linked to form a divalent group having an alicyclic group as R 2 , and the amino group and alicyclic group in the diamine component are alkylene groups. You may connect with.
The alicyclic group and alkylene group that can form a divalent group having an alicyclic group may have a substituent, and an alkyl group (preferably an alkyl group having 1 to 4 carbon atoms) as such a substituent. ), Halogen atoms and the like.
Particularly preferred diamine components having an alicyclic structure having R 2 as a nucleus include a 5-amino-1,3,3-trimethylcyclohexanemethylamine component, a cis-1,4-cyclohexanediamine component, and trans-1,4- Cyclohexanediamine component, 1,4-cyclohexanediamine component (cis, trans mixture), 4,4′-methylenebis (cyclohexylamine) component and its 3,3′-dimethyl-substituted product, bis (aminomethyl) bicyclo [2.2 .1] heptane component, 1,3-diaminoadamantane component, 3,3′-diamino-1,1′-biadamantyl component, 4,4′-hexafluoroisopropylidenebis (cyclohexylamine) component, Of which 3,3′-diamino-1,1′-biadamantyl component, trans-1,4-cyclo From the viewpoint of hexane diamine component to lower the stress.
The content of the alicyclic diamine component having two amino groups with R 2 as a nucleus in the resin (a) is 20 to 70 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 30 to 60 mol%.
 Rについての芳香族基を有する2価の基における芳香族基としては、炭素数5~16の芳香族基であることが好ましく、フェニレン基、ナフチレン基などが挙げられる。また、前記芳香族基は窒素原子、酸素原子などのヘテロ原子を含んでいてもよく、例えば、2価のベンゾオキサゾール基などが挙げられる。
 Rについての芳香族基を有する2価の基としては前記芳香族基そのものであってもよいが、複数の芳香族基が単結合ないしは2価の連結基を介して連結して、Rとしての芳香族基を有する2価の基を形成していてもよく、ジアミン成分中のアミノ基と芳香族基とが2価の連結基を介して連結していてもよい。
 前記2価の連結基としては、アルキレン基(炭素数1~6のアルキレン基が好ましく、例えば、メチレン基、エチレン基、プロピレン基など)、酸素原子、イオウ原子、2価のスルホン基、エステル結合、ケトン基、アミド基などが挙げられる。
 芳香族基を有する2価の基を構成し得る前記芳香族基、アルキレン基は置換基を有していてもよく、そのような置換基としてアルキル基(好ましくは炭素数1~4のアルキル基)、ハロゲン原子、メトキシ基などのアルコキシ基、シアノ基、フェニル基などのアリール基などが挙げられる。
 Rを核とする芳香族ジアミン成分の具体例としては、例えば、m-フェニレンジアミン成分、p-フェニレンジアミン成分、2,4-トリレンジアミン成分、3,3’-ジアミノジフェニルエーテル成分、3,4’-ジアミノジフェニルエーテル成分、4,4’-ジアミノジフェニルエーテル成分、3,3’-ジアミノジフェニルスルホン成分、4,4’-ジアミノジフェニルスルホン成分、3,4’-ジアミノジフェニルスルホン成分、3,3’-ジアミノジフェニルメタン成分、4,4’-ジアミノジフェニルメタン成分、3,4’-ジアミノジフェニルメタン成分、4,4’-ジアミノジフェニルスルフィド成分、3,3’-ジアミノジフェニルケトン成分、4,4’-ジアミノジフェニルケトン成分、3,4’-ジアミノジフェニルケトン成分、2,2’-ビス(4-アミノフェニル)プロパン成分、2,2’-ビス(4-アミノフェニル)ヘキサフルオロプロパン成分、1,3-ビス(3-アミノフェノキシ)ベンゼン成分、1,3-ビス(4-アミノフェノキシ)ベンゼン成分、1,4-ビス(4-アミノフェノキシ)ベンゼン成分、4-メチル-2,4-ビス(4-アミノフェニル)-1-ペンテン成分、4-メチル-2,4-ビス(4-アミノフェニル)-2-ペンテン成分、1,4-ビス(α,α-ジメチル-4-アミノベンジル)ベンゼン成分、イミノ-ジ-p-フェニレンジアミン成分、1,5-ジアミノナフタレン成分、2,6-ジアミノナフタレン成分、4-メチル-2,4-ビス(4-アミノフェニル)ペンタン成分、5(又は6)-アミノ-1-(4-アミノフェニル)-1,3,3-トリメチルインダン成分、ビス(p-アミノフェニル)ホスフィンオキシド成分、4,4’-ジアミノアゾベンゼン成分、4,4’-ジアミノジフェニル尿素成分、4,4’-ビス(4-アミノフェノキシ)ビフェニル成分、2,2-ビス[4-(4-アミノフェノキシ)フェニル]プロパン成分、2,2-ビス[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン成分、2,2-ビス[4-(3-アミノフェノキシ)フェニル]ベンゾフェノン成分、4,4’-ビス(4-アミノフェノキシ)ジフェニルスルホン成分、4,4’-ビス[4-(α,α-ジメチル-4-アミノベンジル)フェノキシ]ベンゾフェノン成分、4,4’-ビス[4-(α,α―ジメチル-4-アミノベンジル)フェノキシ]ジフェニルスルホン成分、4,4’-ジアミノビフェニル成分、4,4’-ジアミノベンゾフェノン成分、フェニルインダンジアミン成分、3,3’-ジメトキシ-4,4’-ジアミノビフェニル成分、3,3’-ジメチル-4,4’-ジアミノビフェニル成分、2,2’-ジメチル4,4’-ジアミノビフェニル成分、2,2’-ビス(トリフルオロメチル)ベンジジン成分、o-トルイジンスルホン成分、2,2-ビス(4-アミノフェノキシフェニル)プロパン成分、ビス(4-アミノフェノキシフェニル)スルホン成分、ビス(4-アミノフェノキシフェニル)スルフィド成分、1,4-(4-アミノフェノキシフェニル)ベンゼン成分、1,3-(4-アミノフェノキシフェニル)ベンゼン成分、9,9-ビス(4-アミノフェニル)フルオレン成分、4,4’-ジ-(3-アミノフェノキシ)ジフェニルスルホン成分、4,4’-ジアミノベンズアニリド成分、4-アミノフェニル-4’-アミノフェニルベンゾエート成分、ビス(4-アミノフェニル)テレフタレート成分、2-(4-アミノフェニル)ベンゾオキサゾール-5-イルアミン、4,4’’-ジアミノ-p-ターフェニル成分等、及びこれら芳香族ジアミンの芳香核の水素原子が、塩素原子、フッ素原子、臭素原子、メチル基、メトキシ基、シアノ基、フェニル基からなる群より選ばれた少なくとも一種の基又は原子によって置換された構造が挙げられる。
 特に好ましい芳香族ジアミン成分としては、p-フェニレンジアミン成分、4,4’-ジアミノジフェニルエーテル成分、3,3’-ジアミノジフェニルスルホン成分、4,4’-ジアミノジフェニルスルホン成分、2,2’-ビス(4-アミノフェニル)ヘキサフルオロプロパン成分、1,4-ビス(4-アミノフェノキシ)ベンゼン成分、イミノ-ジ-p-フェニレンジアミン成分、4,4’-ジアミノビフェニル成分、4,4’-ジアミノベンゾフェノン成分、3,3’-ジメトキシ-4,4’-ジアミノビフェニル成分、3,3’-ジメチル-4,4’-ジアミノビフェニル成分、2,2’-ジメチル4,4’-ジアミノビフェニル成分、2,2’-ビス(トリフルオロメチル)ベンジジン成分、o-トルイジンスルホン成分、2,2-ビス(4-アミノフェノキシフェニル)プロパン成分、9,9-ビス(4-アミノフェニル)フルオレン成分、4,4’-ジ-(3-アミノフェノキシ)ジフェニルスルホン成分、4,4’-ジアミノベンズアニリド成分、4-アミノフェニル-4’-アミノフェニルベンゾエート成分、ビス(4-アミノフェニル)テレフタレート、2-(4-アミノフェニル)ベンゾオキサゾール-5-イルアミン成分、4,4’’-ジアミノ-p-ターフェニル成分が挙げられ、良好な靭性を有し、応力が低い膜が得られる。
 また、上記ジアミン成分には水酸基が置換されていても良い。このようなビスアミノフェノール成分としては、例えば、3,3’-ジヒドロキシベンジジン成分、3,3’-ジアミノ-4,4’-ジヒドロキシビフェニル成分、4,4’-ジアミノ-3,3’-ジヒドロキシビフェニル成分、3,3’-ジアミノ-4,4’-ジヒドロキシジフェニルスルホン成分、4,4’-ジアミノ-3,3’-ジヒドロキシジフェニルスルホン成分、ビス-(3-アミノ-4-ヒドロキシフェニル)メタン成分、2,2-ビス-(3-アミノ-4-ヒドロキシフェニル)プロパン成分、2,2-ビス-(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロプロパン成分、2,2-ビス-(4-アミノ-3-ヒドロキシフェニル)ヘキサフルオロプロパン成分、ビス-(4-アミノ-3-ヒドロキシフェニル)メタン成分、2,2-ビス-(4-アミノ-3-ヒドロキシフェニル)プロパン成分、4,4’-ジアミノ-3,3’-ジヒドロキシベンゾフェノン成分、3,3’-ジアミノ-4,4’-ジヒドロキシベンゾフェノン成分、4,4’-ジアミノ-3,3’-ジヒドロキシジフェニルエーテル成分、3,3’-ジアミノ-4,4’-ジヒドロキシジフェニルエーテル成分、1,4-ジアミノ-2,5-ジヒドロキシベンゼン成分、1,3-ジアミノ-2,4-ジヒドロキシベンゼン成分、1,3-ジアミノ-4,6-ジヒドロキシベンゼン成分などが挙げられる。これらのビスアミノフェノール成分は単独あるいは混合して使用してもよい。
The aromatic group in the divalent group having an aromatic group for R 2 is preferably an aromatic group having 5 to 16 carbon atoms, and examples thereof include a phenylene group and a naphthylene group. Further, the aromatic group may contain a hetero atom such as a nitrogen atom or an oxygen atom, and examples thereof include a divalent benzoxazole group.
The divalent group having an aromatic group for R 2 may be the aromatic group itself, but a plurality of aromatic groups are linked via a single bond or a divalent linking group, and R 2 The divalent group which has an aromatic group as may be formed, and the amino group in the diamine component and the aromatic group may be linked via a divalent linking group.
The divalent linking group is preferably an alkylene group (an alkylene group having 1 to 6 carbon atoms, such as a methylene group, an ethylene group, or a propylene group), an oxygen atom, a sulfur atom, a divalent sulfone group, or an ester bond. , Ketone group, amide group and the like.
The aromatic group and alkylene group that can form a divalent group having an aromatic group may have a substituent, and as such a substituent, an alkyl group (preferably an alkyl group having 1 to 4 carbon atoms) may be used. ), An alkoxy group such as a halogen atom and a methoxy group, and an aryl group such as a cyano group and a phenyl group.
Specific examples of the aromatic diamine component having R 2 as a core include, for example, an m-phenylenediamine component, a p-phenylenediamine component, a 2,4-tolylenediamine component, a 3,3′-diaminodiphenyl ether component, 3, 4'-diaminodiphenyl ether component, 4,4'-diaminodiphenyl ether component, 3,3'-diaminodiphenyl sulfone component, 4,4'-diaminodiphenyl sulfone component, 3,4'-diaminodiphenyl sulfone component, 3,3 ' -Diaminodiphenylmethane component, 4,4'-diaminodiphenylmethane component, 3,4'-diaminodiphenylmethane component, 4,4'-diaminodiphenyl sulfide component, 3,3'-diaminodiphenyl ketone component, 4,4'-diaminodiphenyl Ketone component, 3,4'-diaminodiphenyl ketone component, 2 2′-bis (4-aminophenyl) propane component, 2,2′-bis (4-aminophenyl) hexafluoropropane component, 1,3-bis (3-aminophenoxy) benzene component, 1,3-bis ( 4-aminophenoxy) benzene component, 1,4-bis (4-aminophenoxy) benzene component, 4-methyl-2,4-bis (4-aminophenyl) -1-pentene component, 4-methyl-2,4 -Bis (4-aminophenyl) -2-pentene component, 1,4-bis (α, α-dimethyl-4-aminobenzyl) benzene component, imino-di-p-phenylenediamine component, 1,5-diaminonaphthalene Component, 2,6-diaminonaphthalene component, 4-methyl-2,4-bis (4-aminophenyl) pentane component, 5 (or 6) -amino-1- (4-aminophenyl) 1,3,3-trimethylindane component, bis (p-aminophenyl) phosphine oxide component, 4,4′-diaminoazobenzene component, 4,4′-diaminodiphenylurea component, 4,4′-bis (4- Aminophenoxy) biphenyl component, 2,2-bis [4- (4-aminophenoxy) phenyl] propane component, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane component, 2,2- Bis [4- (3-aminophenoxy) phenyl] benzophenone component, 4,4′-bis (4-aminophenoxy) diphenylsulfone component, 4,4′-bis [4- (α, α-dimethyl-4-amino) Benzyl) phenoxy] benzophenone component, 4,4′-bis [4- (α, α-dimethyl-4-aminobenzyl) phenoxy] diphenylsulfo Component, 4,4′-diaminobiphenyl component, 4,4′-diaminobenzophenone component, phenylindanediamine component, 3,3′-dimethoxy-4,4′-diaminobiphenyl component, 3,3′-dimethyl-4, 4'-diaminobiphenyl component, 2,2'-dimethyl 4,4'-diaminobiphenyl component, 2,2'-bis (trifluoromethyl) benzidine component, o-toluidine sulfone component, 2,2-bis (4- Aminophenoxyphenyl) propane component, bis (4-aminophenoxyphenyl) sulfone component, bis (4-aminophenoxyphenyl) sulfide component, 1,4- (4-aminophenoxyphenyl) benzene component, 1,3- (4- Aminophenoxyphenyl) benzene component, 9,9-bis (4-aminophenyl) fluorene component, 4,4′- -(3-aminophenoxy) diphenylsulfone component, 4,4'-diaminobenzanilide component, 4-aminophenyl-4'-aminophenylbenzoate component, bis (4-aminophenyl) terephthalate component, 2- (4-amino Phenyl) benzoxazol-5-ylamine, 4,4 ″ -diamino-p-terphenyl component, etc., and hydrogen atoms of aromatic nuclei of these aromatic diamines are chlorine, fluorine, bromine, methyl, methoxy And a structure substituted with at least one group or atom selected from the group consisting of a group, a cyano group and a phenyl group.
Particularly preferred aromatic diamine components include p-phenylenediamine component, 4,4′-diaminodiphenyl ether component, 3,3′-diaminodiphenylsulfone component, 4,4′-diaminodiphenylsulfone component, and 2,2′-bis. (4-aminophenyl) hexafluoropropane component, 1,4-bis (4-aminophenoxy) benzene component, imino-di-p-phenylenediamine component, 4,4'-diaminobiphenyl component, 4,4'-diamino Benzophenone component, 3,3′-dimethoxy-4,4′-diaminobiphenyl component, 3,3′-dimethyl-4,4′-diaminobiphenyl component, 2,2′-dimethyl 4,4′-diaminobiphenyl component, 2,2′-bis (trifluoromethyl) benzidine component, o-toluidine sulfone component, 2,2-bis (4-amino Nophenoxyphenyl) propane component, 9,9-bis (4-aminophenyl) fluorene component, 4,4′-di- (3-aminophenoxy) diphenylsulfone component, 4,4′-diaminobenzanilide component, 4- Aminophenyl-4′-aminophenylbenzoate component, bis (4-aminophenyl) terephthalate, 2- (4-aminophenyl) benzoxazol-5-ylamine component, 4,4 ″ -diamino-p-terphenyl component A film having good toughness and low stress can be obtained.
The diamine component may be substituted with a hydroxyl group. Examples of such bisaminophenol components include 3,3′-dihydroxybenzidine component, 3,3′-diamino-4,4′-dihydroxybiphenyl component, and 4,4′-diamino-3,3′-dihydroxy. Biphenyl component, 3,3′-diamino-4,4′-dihydroxydiphenylsulfone component, 4,4′-diamino-3,3′-dihydroxydiphenylsulfone component, bis- (3-amino-4-hydroxyphenyl) methane Component, 2,2-bis- (3-amino-4-hydroxyphenyl) propane component, 2,2-bis- (3-amino-4-hydroxyphenyl) hexafluoropropane component, 2,2-bis- (4 -Amino-3-hydroxyphenyl) hexafluoropropane component, bis- (4-amino-3-hydroxyphenyl) methane component, 2 2-bis- (4-amino-3-hydroxyphenyl) propane component, 4,4′-diamino-3,3′-dihydroxybenzophenone component, 3,3′-diamino-4,4′-dihydroxybenzophenone component, 4 , 4'-diamino-3,3'-dihydroxydiphenyl ether component, 3,3'-diamino-4,4'-dihydroxydiphenyl ether component, 1,4-diamino-2,5-dihydroxybenzene component, 1,3-diamino -2,4-dihydroxybenzene component, 1,3-diamino-4,6-dihydroxybenzene component and the like. These bisaminophenol components may be used alone or in combination.
 これらのビスアミノフェノール構造のうち特に好ましい態様として、前記一般式(1)中のRが下記から選ばれる芳香族基を有する2価の基の場合が挙げられる。 Among these bisaminophenol structures, a particularly preferred embodiment is that R 2 in the general formula (1) is a divalent group having an aromatic group selected from the following.
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
 上記式中、Xは-O-、-S-、-C(CF-、-CH-、-SO-、-NHCO-を表す。*は前記一般式(1)中のRに結合する-NH-、又は-OHとの結合位置を表す。また、上記構造において、Rに結合する-NH-と-OHとは互いにオルト位(隣接位)に結合する。
 Rを核として2個のアミノ基を有する芳香族ジアミン成分の樹脂(a)中の含有量としては、樹脂(a)を構成する全繰り返し単位に対して5~40モル%であることが好ましく、10~30モル%であることがより好ましい。
In the above formula, X 1 represents —O—, —S—, —C (CF 3 ) 2 —, —CH 2 —, —SO 2 —, —NHCO—. * Represents a bonding position with —NH— or —OH bonded to R 2 in the general formula (1). In the above structure, —NH— and —OH bonded to R 2 are bonded to each other in the ortho position (adjacent position).
The content of the aromatic diamine component having two amino groups with R 2 as a nucleus in the resin (a) is 5 to 40 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 10 to 30 mol%.
 また、基板との接着性を高めるためにRを核とするジアミン成分としてシリコンジアミン成分とすることができる。この例としては、ビス(4-アミノフェニル)ジメチルシラン成分、ビス(4-アミノフェニル)テトラメチルシロキサン成分、ビス(4-アミノフェニル)テトラメチルジシロキサン成分、ビス(γ―アミノプロピル)テトラメチルジシロキサン成分、1,4-ビス(γ―アミノプロピルジメチルシリル)ベンゼン成分、ビス(4-アミノブチル)テトラメチルジシロキサン成分、ビス(γ―アミノプロピル)テトラフェニルジシロキサン成分等が挙げられる。
 シリコンジアミン成分として、下記構造も挙げることができる。
Further, the R 2 in order to enhance the adhesion to the substrate can be a silicon diamine component as the diamine component to the nucleus. Examples include bis (4-aminophenyl) dimethylsilane component, bis (4-aminophenyl) tetramethylsiloxane component, bis (4-aminophenyl) tetramethyldisiloxane component, bis (γ-aminopropyl) tetramethyl. Examples thereof include a disiloxane component, a 1,4-bis (γ-aminopropyldimethylsilyl) benzene component, a bis (4-aminobutyl) tetramethyldisiloxane component, and a bis (γ-aminopropyl) tetraphenyldisiloxane component.
The following structure can also be mentioned as a silicon diamine component.
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
 上記式において、R及びRは2価の有機基を表し、R及びRは1価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。複数のRは互いに同一であっても異なっていてもよい。
 R及びRで表される2価の有機基としては、置換基を有していてもよい炭素数1~20の直鎖若しくは分岐のアルキレン基、炭素数6~20のフェニレン基、炭素数3~20の2価の脂環基、又はこれらを組み合わせて構成される基を表す。
 R及びRで表される1価の有機基としては、置換基を有していてもよい炭素数1~20の直鎖若しくは分岐のアルキル基若しくは炭素数6~20のアリール基を表す。
 より具体的には、下記を挙げることができる。
In the above formula, R 5 and R 6 represent a divalent organic group, and R 7 and R 8 represent a monovalent organic group. A plurality of R 7 may be the same as or different from each other. The plurality of R 8 may be the same as or different from each other.
Examples of the divalent organic group represented by R 5 and R 6 include a linear or branched alkylene group having 1 to 20 carbon atoms which may have a substituent, a phenylene group having 6 to 20 carbon atoms, carbon This represents a divalent alicyclic group of 3 to 20 or a group constituted by combining these.
The monovalent organic group represented by R 7 and R 8 represents a linear or branched alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may have a substituent. .
More specifically, the following can be mentioned.
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
 Rを核として少なくとも2個のアミノ基を有するシリコンジアミン成分の樹脂(a)中の含有量としては、樹脂(a)を構成する全繰り返し単位に対して5~40モル%であることが好ましく、10~30モル%であることがより好ましい。 The content of the silicon diamine component having at least two amino groups with R 2 as a nucleus in the resin (a) is 5 to 40 mol% with respect to all repeating units constituting the resin (a). Preferably, it is 10 to 30 mol%.
 前記一般式(1)で表される繰り返し単位を有する樹脂(a)は、熱硬化させてポリイミドとした際に、直線性及び剛直性を向上させ低応力を達成しウエハ反りを防止する観点、基板との接着性を高める観点、露光後のアルカリ溶解性を高める観点などから、下記一般式(2)で表される繰り返し単位と、下記一般式(3)で表される繰り返し単位とを有する樹脂であることが好ましい。 When the resin (a) having the repeating unit represented by the general formula (1) is thermoset to be polyimide, the viewpoint of improving linearity and rigidity and achieving low stress to prevent wafer warpage, From the viewpoint of enhancing the adhesiveness with the substrate, the viewpoint of enhancing the alkali solubility after exposure, and the like, it has a repeating unit represented by the following general formula (2) and a repeating unit represented by the following general formula (3). A resin is preferred.
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000017
 上記一般式(2)中、
 R’は、前記一般式(1)におけるRと同義である。
 R’は、前記一般式(1)におけるRと同義である。
 但し複数の-COR’のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
 Rは、脂環基を有する2価の有機基である。
 上記一般式(3)中、
 R”は、前記一般式(1)におけるRと同義である。
 R”は、前記一般式(1)におけるRと同義である。
 但し複数の-CO”のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
 Rは、Rとは異なる2価の有機基である。
In the general formula (2),
R 1 'has the same meaning as R 1 in the general formula (1).
R 3 'has the same meaning as R 3 in Formula (1).
However, at least one of the plurality of —CO 2 R ′ 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
R 4 is a divalent organic group having an alicyclic group.
In the general formula (3),
R 1 "has the same meaning as R 1 in the general formula (1).
R 3 "has the same meaning as R 3 in Formula (1).
However, at least one of the plurality of —CO 2 R 3 ″ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
R 5 is a divalent organic group different from R 4 .
 Rについての脂環基を有する2価の有機基の具体例、好ましい例としては、Rについての脂環基を有する2価の基の具体例、好ましい例と同様のものが挙げられる。
 Rとは異なる2価の有機基Rとしては、Rについて前述した、芳香族基を有する2価の基、ケイ素原子を含有する2価の基などが挙げられる。
 前記一般式(3)におけるRは、熱硬化させてポリイミドとした際に、直線性及び剛直性を向上させ低応力を達成しウエハ反りを防止する観点、耐熱性を向上させる観点から、芳香族基を有する2価の基であることが好ましく、Rについての芳香族基を有する2価の基の具体例、好ましい例としては、Rについての芳香族基を有する2価の基の具体例、好ましい例と同様のものが挙げられる。下記式のいずれかで表される2価の基であることがより好ましい。
Specific examples and preferred examples of the divalent organic group having an alicyclic group for R 4 include those similar to the specific examples and preferred examples of the divalent group having an alicyclic group for R 2 .
Examples of the divalent organic group R 5 different from R 4 include the divalent group having an aromatic group and the divalent group containing a silicon atom described above for R 2 .
R 5 in the general formula (3) is a fragrance from the viewpoint of improving linearity and rigidity, achieving low stress and preventing wafer warpage, and improving heat resistance when cured to polyimide. A divalent group having an aromatic group is preferred, and specific examples and preferred examples of the divalent group having an aromatic group for R 5 include a divalent group having an aromatic group for R 2 . Specific examples and preferred examples are the same. A divalent group represented by any of the following formulas is more preferable.
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000018
 上記式中、各芳香環の水素原子が、各々独立に、フッ素原子、塩素原子、臭素原子、メチル基、メトキシ基、シアノ基、フェニル基、トリフルオロメチル基からなる群より選ばれた少なくとも1種の原子又は基によって置換されていてもよい。 In the above formula, at least one hydrogen atom of each aromatic ring is independently selected from the group consisting of a fluorine atom, a chlorine atom, a bromine atom, a methyl group, a methoxy group, a cyano group, a phenyl group, and a trifluoromethyl group. It may be substituted by a species atom or group.
 R、R’又はR”の有機基の例としては、炭素数1~20であることが好ましく、具体的には、酸の作用により分解しアルカリ可溶性基を生じる基、アルキル基、シクロアルキル基、アリール基、アラルキル基、アルケニル基、アルキニル基、アルコキシ基、ケイ素原子含有基、-CORc(Rcはアルキル基、アリール基、シクロアルキル基)、-SORd(Rdはアルキル基、アリール基、シクロアルキル基、o-キノンジアジド基)、又はそれらを組み合わせた基などが挙げられる。 Examples of the organic group for R 3 , R 3 ′ or R 3 ″ preferably have 1 to 20 carbon atoms. Specifically, a group that decomposes by the action of an acid to generate an alkali-soluble group, an alkyl group, A cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a silicon atom-containing group, —CORc (Rc is an alkyl group, an aryl group, a cycloalkyl group), —SO 2 Rd (Rd is an alkyl group, Aryl group, cycloalkyl group, o-quinonediazide group), or a combination thereof.
 R、R’又はR”で表されるアルキル基は、置換基を有していてもよく、好ましくは炭素数1~20の直鎖、又は分岐アルキル基であり、アルキル鎖中に酸素原子、硫黄原子、窒素原子を有していてもよい。具体的には、メチル基、エチル基、n-プロピル基、n-ブチル基、n-ペンチル基、n-ヘキシル基、n-オクチル基、n-ドデシル基、n-テトラデシル基、n-オクタデシル基などの直鎖アルキル基、イソプロピル基、イソブチル基、t-ブチル基、ネオペンチル基、2-エチルヘキシル基などの分岐アルキル基を挙げることができる。置換基として、例えば、シアノ基、ハロゲン原子、水酸基、アルコキシ基、カルボキシル基、アルコキシカルボニル基が挙げられる。 The alkyl group represented by R 3 , R 3 ′ or R 3 ″ may have a substituent, and is preferably a linear or branched alkyl group having 1 to 20 carbon atoms in the alkyl chain. It may have an oxygen atom, a sulfur atom, or a nitrogen atom, specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group And straight chain alkyl groups such as n-dodecyl group, n-tetradecyl group and n-octadecyl group, and branched alkyl groups such as isopropyl group, isobutyl group, t-butyl group, neopentyl group and 2-ethylhexyl group. Examples of the substituent include a cyano group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group.
 R、R’又はR”で表されるシクロアルキル基は、置換基を有していてもよく、好ましくは炭素数3~20のシクロアルキル基であり、多環でもよく、環内に酸素原子を有していてもよい。具体的には、シクロプロピル基、シクロペンチル基、シクロヘキシル基、ノルボルニル基、アダマンチル基などを挙げることができる。 The cycloalkyl group represented by R 3 , R 3 ′ or R 3 ″ may have a substituent, preferably a cycloalkyl group having 3 to 20 carbon atoms, which may be polycyclic, Specific examples include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like.
 R、R’又はR”で表されるアリール基としては、置換基を有していてもよく、好ましくは炭素数6~14のアリール基であり、例えば、フェニル基、ナフチル基、アントリル基などが挙げられる。 The aryl group represented by R 3 , R 3 ′ or R 3 ″ may have a substituent, preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a naphthyl group, And anthryl group.
 R、R’又はR”で表されるアラルキル基は、置換基を有していてもよく、好ましくは炭素数7~20のアラルキル基が挙げられ、例えば、ベンジル基、フェネチル基、ナフチルメチル基、ナフチルエチル基が挙げられる。 The aralkyl group represented by R 3 , R 3 ′ or R 3 ″ may have a substituent, preferably an aralkyl group having 7 to 20 carbon atoms, such as a benzyl group, a phenethyl group, A naphthylmethyl group and a naphthylethyl group are mentioned.
 R、R’又はR”で表されるアルコキシ基としては、置換基を有していてもよく、好ましくは炭素数1~20のアルコキシ基であり、例えば、メトキシ基、エトキシ基、プロポキシ基、n-ブトキシ基、ペンチルオキシ基、ヘキシルオキシ基、ヘプチルオキシ基などが挙げられる。 The alkoxy group represented by R 3 , R 3 ′ or R 3 ″ may have a substituent, preferably an alkoxy group having 1 to 20 carbon atoms, such as a methoxy group, an ethoxy group, Examples include propoxy group, n-butoxy group, pentyloxy group, hexyloxy group, heptyloxy group and the like.
 R、R’又はR”で表されるケイ素原子含有基は、ケイ素が含有されていれば特に制限されないが、シリルオキシ基(トリメチルシリルオキシ、トリエチルシリルオキシ、t-ブチルジメチルシリルオキシ)が好ましい。 The silicon atom-containing group represented by R 3 , R 3 ′ or R 3 ″ is not particularly limited as long as silicon is contained, but a silyloxy group (trimethylsilyloxy, triethylsilyloxy, t-butyldimethylsilyloxy) is preferable.
 R、R’又はR”で表されるアルケニル基は、上記アルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、ケイ素原子含有基の任意の位置に2重結合を有する基が挙げられる。炭素数1~12が好ましく、更に炭素数1~6が好ましい。例えば、ビニル基、アリル基が好ましい。 The alkenyl group represented by R 3 , R 3 ′ or R 3 ″ is a group having a double bond at an arbitrary position of the alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group or silicon atom-containing group. The number of carbon atoms is preferably 1 to 12, more preferably 1 to 6. For example, a vinyl group and an allyl group are preferable.
 R、R’又はR”で表されるアルキニル基は、上記アルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、ケイ素原子含有基、の任意の位置に3重結合を有する基が挙げられる。炭素数1~12が好ましく、更に炭素数1~6が好ましい。例えば、エチニル基、プロパルギル基が好ましい。 The alkynyl group represented by R 3 , R 3 ′ or R 3 ″ has a triple bond at any position of the above alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group and silicon atom-containing group. Preferred are those having 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, such as ethynyl group and propargyl group.
 本発明において、樹脂(a)中に存在する複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。前記一般式(2)における-CO’、前記一般式(3)における-CO”についても同様である。
 酸の作用により分解しアルカリ可溶性基を生じる基とは、酸の作用により分解し、樹脂側に水酸基、カルボキシル基のようなアルカリ可溶性基を生じる基(以下、酸分解性基ともいう。)をいう。本発明において、酸分解性基は、酸の作用により分解し、樹脂側にアルカリ可溶性基としてカルボキシル基を生じる基であることが好ましい。
 酸分解性基として好ましい基は、これらのアルカリ可溶性基の水素原子を酸で脱離する基で置換した基である。
 酸で脱離する基としては、例えば、-C(R36)(R37)(R38)、-C(R36)(R37)(OR39)、-C(R01)(R02)(OR39)等を挙げることができる。 式中、R36~R39は、各々独立に、アルキル基、シクロアルキル基、アリール基、アラルキル基又はアルケニル基を表す。R36とR37とは、互いに結合して環を形成してもよい。
In the present invention, at least one of the plurality of —CO 2 R 3 present in the resin (a) is a group that decomposes by the action of an acid to generate an alkali-soluble group. Formula (2) -CO 2 R 3 in 'is the same for -CO 2 R 3 "in formula (3).
The group that decomposes by the action of an acid to generate an alkali-soluble group is a group that decomposes by the action of an acid to generate an alkali-soluble group such as a hydroxyl group or a carboxyl group on the resin side (hereinafter also referred to as an acid-decomposable group). Say. In the present invention, the acid-decomposable group is preferably a group that decomposes by the action of an acid and generates a carboxyl group as an alkali-soluble group on the resin side.
A preferred group as the acid-decomposable group is a group obtained by substituting the hydrogen atom of these alkali-soluble groups with a group capable of leaving with an acid.
Examples of the group capable of leaving with an acid include —C (R 36 ) (R 37 ) (R 38 ), —C (R 36 ) (R 37 ) (OR 39 ), —C (R 01 ) (R 02 ). ) (OR 39 ) and the like. In the formula, R 36 to R 39 each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R 36 and R 37 may be bonded to each other to form a ring.
 R01及びR02は、各々独立に、水素原子、アルキル基、シクロアルキル基、アリール基、アラルキル基又はアルケニル基を表す。 R 01 and R 02 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
 酸分解性基としては好ましくは、第3級アルキルエステル基、アセタールエステル基、クミルエステル基、エノールエステル基等である。更に好ましくは、第3級アルキルエステル基、アセタールエステル基であり、これを用いることにより高感度で高解像性の感光膜が得られる。 The acid-decomposable group is preferably a tertiary alkyl ester group, an acetal ester group, a cumyl ester group, an enol ester group or the like. A tertiary alkyl ester group and an acetal ester group are more preferable, and a photosensitive film having high sensitivity and high resolution can be obtained by using them.
 酸分解性基としての第3級アルキルエステル基としては、カルボキシル基の水素原子が下記一般式(AI)で表される基で置換されたエステル基であることが好ましい。 The tertiary alkyl ester group as the acid-decomposable group is preferably an ester group in which the hydrogen atom of the carboxyl group is substituted with a group represented by the following general formula (AI).
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000019
 前記一般式(AI)に於いて、
 Tは、単結合又は-Rt-COO-基を表す。Rtは、アルキレン基又はシクロアルキレン基を表す。 
 Rx~Rxは、それぞれ独立に、アルキル基(直鎖若しくは分岐)又はシクロアルキル基(単環若しくは多環)を表す。 
 Rx~Rxの2つが結合して、シクロアルキル基(単環若しくは多環)を形成してもよい。
In the general formula (AI),
T represents a single bond or a —Rt—COO— group. Rt represents an alkylene group or a cycloalkylene group.
Rx 1 to Rx 3 each independently represents an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).
Two of Rx 1 to Rx 3 may combine to form a cycloalkyl group (monocyclic or polycyclic).
 Rtは、炭素数1~5のアルキレン基が好ましく、-CH-基、-(CH-基、-(CH-基がより好ましい。 
 Rx~Rxのアルキル基としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、t-ブチル基などの炭素数1~4のものが好ましい。
Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a —CH 2 — group, — (CH 2 ) 2 — group, or — (CH 2 ) 3 — group.
The alkyl group of Rx 1 to Rx 3 is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group.
 Rx~Rxのシクロアルキル基としては、シクロペンチル基、シクロヘキシル基などの単環のシクロアルキル基、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、アダマンチル基などの多環のシクロアルキル基が好ましい。 
 Rx~Rxの2つが結合して形成されるシクロアルキル基としては、シクロペンチル基、シクロヘキシル基などの単環のシクロアルキル基、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、アダマンチル基などの多環のシクロアルキル基が好ましい。炭素数5又は6の単環のシクロアルキル基が特に好ましい。 
 Rxがメチル基又はエチル基であり、RxとRxとが結合して上述のシクロアルキル基を形成している態様が好ましい。
Examples of the cycloalkyl group represented by Rx 1 to Rx 3 include monocyclic cycloalkyl groups such as cyclopentyl group and cyclohexyl group, polycyclic cycloalkyl groups such as norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, and adamantyl group. Groups are preferred.
Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, an adamantyl group A polycyclic cycloalkyl group such as a group is preferred. A monocyclic cycloalkyl group having 5 or 6 carbon atoms is particularly preferable.
An embodiment in which Rx 1 is a methyl group or an ethyl group, and Rx 2 and Rx 3 are bonded to form the above-described cycloalkyl group is preferable.
 上記各基は、置換基を有していてもよく、置換基としては、例えば、アルキル基(炭素数1~4)、ハロゲン原子、水酸基、アルコキシ基(炭素数1~4)、カルボキシル基、アルコキシカルボニル基(炭素数2~6)などが挙げられ、炭素数8以下が好ましい。 Each of the above groups may have a substituent. Examples of the substituent include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, Examples thereof include alkoxycarbonyl groups (having 2 to 6 carbon atoms), and those having 8 or less carbon atoms are preferred.
 酸分解性基としての第3級アルキルエステル基を構成する前記一般式(AI)で表される基の具体例を以下に示すが、本発明は、これに限定されるものではない。 Specific examples of the group represented by the general formula (AI) constituting the tertiary alkyl ester group as the acid-decomposable group are shown below, but the present invention is not limited thereto.
 具体例中、Rxa、Rxbはそれぞれ炭素数1~4のアルキル基を表す。Zは、上記各基が有していてよい置換基を表し、複数存在する場合は各々独立である。pは0又は正の整数を表す。 In specific examples, Rxa and Rxb each represents an alkyl group having 1 to 4 carbon atoms. Z represents the substituent which each said group may have, and when there exist multiple, each is independent. p represents 0 or a positive integer.
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000021
 酸分解性基としての第3級アルキルエステル基は、前記一般式(AI)で表される基として、下記一般式(I)で表される基及び下記一般式(II)で表される基の少なくともいずれかを有する第3級アルキルエステル基であることがより好ましい。 The tertiary alkyl ester group as the acid-decomposable group includes a group represented by the following general formula (I) and a group represented by the following general formula (II) as the group represented by the general formula (AI). A tertiary alkyl ester group having at least one of the above is more preferable.
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000022
 式(I)及び(II)中、
 R、R、R、Rは、各々独立して、アルキル基又はシクロアルキル基を表す。
 Rは、炭素原子とともに脂環構造を形成するのに必要な原子団を表す。
In formulas (I) and (II),
R 2 , R 4 , R 5 and R 6 each independently represents an alkyl group or a cycloalkyl group.
R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.
 Rにおけるアルキル基は、直鎖型でも分岐型でもよく、置換基を有していてもよい。
 Rにおけるシクロアルキル基は、単環でも多環でもよく、置換基を有していてもよい。
 Rは好ましくはアルキル基であり、より好ましくは炭素数1~10、更に好ましくは炭素数1~5のものであり、例えばメチル基、エチル基が挙げられる。
The alkyl group in R 2 may be linear or branched, and may have a substituent.
The cycloalkyl group in R 2 may be monocyclic or polycyclic and may have a substituent.
R 2 is preferably an alkyl group, more preferably 1 to 10 carbon atoms, still more preferably 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group.
 Rは、炭素原子とともに脂環構造を形成するのに必要な原子団を表す。Rが形成する脂環構造としては、好ましくは、単環の脂環構造であり、その炭素数は好ましくは3~7、より好ましくは5又は6である。 R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and the carbon number thereof is preferably 3 to 7, more preferably 5 or 6.
 R、R、Rにおけるアルキル基は、直鎖型でも分岐型でもよく、置換基を有していてもよい。アルキル基としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、t-ブチル基などの炭素数1~4のものが好ましい。 The alkyl group in R 4 , R 5 , and R 6 may be linear or branched and may have a substituent. As the alkyl group, those having 1 to 4 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group and t-butyl group are preferable.
 R、R、Rにおけるシクロアルキル基は、単環でも多環でもよく、置換基を有していてもよい。シクロアルキル基としては、シクロペンチル基、シクロヘキシル基などの単環のシクロアルキル基、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、アダマンチル基などの多環のシクロアルキル基が好ましい。 The cycloalkyl group in R 4 , R 5 and R 6 may be monocyclic or polycyclic and may have a substituent. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group or an adamantyl group.
 一般式(I)により表される基としては、例えば、下記一般式(I-a)及び(I-b)により表される基が挙げられる。 Examples of the group represented by the general formula (I) include groups represented by the following general formulas (Ia) and (Ib).
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000023
 式中、Rは、一般式(I)におけるRと同義である。 In the formula, R 2 has the same meaning as R 2 in formula (I).
 一般式(II)で表される基が、下記一般式(II-a)で表される基であることが好ましい。 The group represented by the general formula (II) is preferably a group represented by the following general formula (II-a).
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000024
 式(II-a)中、
 R及びRは、一般式(II)におけるものと同義である。
In the formula (II-a),
R 4 and R 5 have the same meaning as in general formula (II).
 酸分解性基としてのアセタールエステル基としては、具体的にはカルボキシル基の水素原子が下記一般式(III)で表される基で置換されたエステル基であることが好ましい。 Specifically, the acetal ester group as the acid-decomposable group is preferably an ester group in which a hydrogen atom of a carboxyl group is substituted with a group represented by the following general formula (III).
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000025
 Raは、水素原子、アルキル基、シクロアルキル基、アリール基又はアラルキル基を表す。
 Rbは、単結合又は2価の連結基を表す。
 Qは、アルキル基、ヘテロ原子を含んでいてもよい脂環基、又は、ヘテロ原子を含んでいてもよい芳香環基を表す。
 Ra、Rb及びQの少なくとも2つは、互いに結合して環を形成していてもよい。この環は、5員環又は6員環であることが好ましい。
Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
Rb represents a single bond or a divalent linking group.
Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom.
At least two of Ra, Rb and Q may be bonded to each other to form a ring. This ring is preferably a 5-membered ring or a 6-membered ring.
 Raとしてのアルキル基、シクロアルキル基、アリール基又はアラルキル基は一般式(1)におけるRについてのアルキル基、シクロアルキル基、アリール基、アラルキル基として前述したものと同様のものが挙げられる。 
 Raとして特に好ましくは、水素原子、メチル基、フェニル基、ベンジル基であり、良好な感度の感光膜が得られる。
 保存中の酸分解性基としてのアセタールエステル基の分解を立体障害により抑制でき、パターニング性の低下を防ぐ観点から、Raが下記一般式(IV)又は(V)で表される基であることも好ましい。
Examples of the alkyl group, cycloalkyl group, aryl group or aralkyl group as Ra include the same groups as those described above for the alkyl group, cycloalkyl group, aryl group and aralkyl group for R 3 in formula (1).
Ra is particularly preferably a hydrogen atom, a methyl group, a phenyl group or a benzyl group, and a photosensitive film having good sensitivity can be obtained.
Ra is a group represented by the following general formula (IV) or (V) from the standpoint of preventing degradation of the acetal ester group as an acid-decomposable group during storage due to steric hindrance and preventing a decrease in patternability. Is also preferable.
Figure JPOXMLDOC01-appb-C000026
Figure JPOXMLDOC01-appb-C000026
 上記一般式中、Rc、Rd、Re、Rf及びRgは、各々独立に、アルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子を表し、Rc、Rdが互いに結合して環を形成していてもよく、Re、Rf及びRgの少なくとも2つが互いに結合して環を形成していてもよい。
 Raが一般式(IV)又は(V)で表される基であると、一般式(1)で表される繰り返し単位を有する樹脂において、保存中のイミド化反応の進行を抑制でき、パターニング性の低下を防ぐことができる。
 Rc、Rd、Re、Rf、Rgとしてのアルキル基、シクロアルキル基、アリール基、アラルキル基又はアルコキシ基は一般式(1)におけるRについてのアルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基として前述したものと同様のものが挙げられる。
 Rc、Rd、Re、Rf、Rgとしてのアリールオキシ基としては、炭素数6~10のアリールオキシ基が好ましく、具体的にはフェノキシ、トルイルオキシ、1-ナフトキシ等が挙げられる。
 Rc、Rd、Re、Rf、Rgとしてのアルコキシカルボニル基としては、炭素数1~10のアルコキシカルボニル基が好ましく、具体的にはメトキシカルボニル、エトキシカルボニル、直鎖又は分岐プロポキシカルボニル、シクロペンチルオキシカルボニル、シクロヘキシルオキシカルボニル等が挙げられる。
 Rc、Rd、Re、Rf、Rgとしてのアリールオキシカルボニル基のアリールオキシ部分としては、前述のアリールオキシ基と同様のものが挙げられる。
In the above general formula, Rc, Rd, Re, Rf and Rg are each independently an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, cyano. Represents a group or a halogen atom, and Rc and Rd may be bonded to each other to form a ring, or at least two of Re, Rf and Rg may be bonded to each other to form a ring.
When Ra is a group represented by the general formula (IV) or (V), the progress of the imidization reaction during storage can be suppressed in the resin having the repeating unit represented by the general formula (1), and the patterning property Can be prevented.
The alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group as Rc, Rd, Re, Rf, Rg is an alkyl group, cycloalkyl group, aryl group, aralkyl group for R 3 in the general formula (1), The thing similar to what was mentioned above as an alkoxy group is mentioned.
The aryloxy group as Rc, Rd, Re, Rf, Rg is preferably an aryloxy group having 6 to 10 carbon atoms, and specific examples include phenoxy, toluyloxy, 1-naphthoxy and the like.
The alkoxycarbonyl group as Rc, Rd, Re, Rf, Rg is preferably an alkoxycarbonyl group having 1 to 10 carbon atoms, specifically, methoxycarbonyl, ethoxycarbonyl, linear or branched propoxycarbonyl, cyclopentyloxycarbonyl, Examples include cyclohexyloxycarbonyl.
Examples of the aryloxy moiety of the aryloxycarbonyl group as Rc, Rd, Re, Rf, and Rg include the same aryloxy groups as those described above.
 保存中の酸分解性基としてのアセタールエステル基の分解を抑制でき、パターニング性の低下を防ぐ観点から、前記一般式(IV)におけるRc、Rdの少なくとも1つが、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基、又は、ハロゲン原子であることが好ましく、少なくとも1つが、アリール基であることがより好ましい。 From the viewpoint of preventing degradation of the acetal ester group as an acid-decomposable group during storage and preventing a decrease in patternability, at least one of Rc and Rd in the general formula (IV) is a cycloalkyl group, an aryl group, or an aralkyl. It is preferably a group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom, and more preferably at least one is an aryl group.
 Rbとしての2価の連結基は、例えば、アルキレン基(好ましくは炭素数1~8のアルキレン基、例えば、メチレン基、エチレン基、プロピレン基、ブチレン基、ヘキシレン基又はオクチレン基)、シクロアルキレン基(好ましくは炭素数3~15のシクロアルキレン基、例えば、シクロペンチレン基又はシクロヘキシレン基)、-S-、-O-、-CO-、-CS-、-SO-、-N(R)-、又はこれらの2種以上の組み合わせであり、総炭素数が20以下のものが好ましい。ここで、Rは、水素原子又はアルキル基(例えば炭素数1~8のアルキル基であって、具体的には、メチル基、エチル基、プロピル基、n-ブチル基、sec-ブチル基、ヘキシル基及びオクチル基等)である。
 Rbは、単結合、アルキレン基、又はアルキレン基と-O-、-CO-、-CS-及び-N(R)-の少なくとも一つとの組み合わせからなる2価の連結基が好ましく、単結合、アルキレン基、又はアルキレン基と-O-との組み合わせからなる2価の連結基がより好ましい。ここで、Rは上述のRと同義である。
The divalent linking group as Rb is, for example, an alkylene group (preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group or an octylene group), a cycloalkylene group. (Preferably a cycloalkylene group having 3 to 15 carbon atoms, such as a cyclopentylene group or a cyclohexylene group), —S—, —O—, —CO—, —CS—, —SO 2 —, —N (R 0 )-, or a combination of two or more thereof, and those having a total carbon number of 20 or less are preferred. Here, R 0 is a hydrogen atom or an alkyl group (eg, an alkyl group having 1 to 8 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, Hexyl group and octyl group).
Rb is preferably a single bond, an alkylene group, or a divalent linking group comprising a combination of an alkylene group and at least one of —O—, —CO—, —CS— and —N (R 0 ) —. , An alkylene group, or a divalent linking group composed of a combination of an alkylene group and —O— is more preferable. Here, R 0 has the same meaning as R 0 described above.
 Qとしてのアルキル基は、例えば、上述したRaとしてのアルキル基と同様である。 The alkyl group as Q is the same as the alkyl group as Ra described above, for example.
 Qとしての脂環基及び芳香環基としては、例えば、上述したRaとしてのシクロアルキル基及びアリール基が挙げられる。その炭素数は、好ましくは、3~18である。なお、本発明においては、複数の芳香環が単結合を介して連結されてなる基(例えば、ビフェニル基、ターフェニル基)もQとしての芳香族基に含まれる。
 ヘテロ原子を含む脂環基及びヘテロ原子を含む芳香環基としては、例えば、チイラン、シクロチオラン、チオフェン、フラン、ピロール、ベンゾチオフェン、ベンゾフラン、ベンゾピロール、トリアジン、イミダゾール、ベンゾイミダゾール、トリアゾール、チアジアゾール、チアゾール及びピロリドンが挙げられる。
 Qとしての脂環基及び芳香環基は、置換基を有していてもよく、例えば、アルキル基、シクロアルキル基、シアノ基、ハロゲン原子、水酸基、アルコキシ基、カルボキシル基、アルコキシカルボニル基が挙げられる。
Examples of the alicyclic group and aromatic ring group as Q include the cycloalkyl group and aryl group as Ra described above. The number of carbon atoms is preferably 3-18. In the present invention, a group in which a plurality of aromatic rings are connected via a single bond (for example, a biphenyl group or a terphenyl group) is also included in the aromatic group as Q.
Examples of the alicyclic group containing a hetero atom and the aromatic ring group containing a hetero atom include, for example, thiirane, cyclothiolane, thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole. And pyrrolidone.
The alicyclic group and aromatic ring group as Q may have a substituent, and examples thereof include an alkyl group, a cycloalkyl group, a cyano group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. It is done.
 (-Rb-Q)として特に好ましくは、メチル基、アリールオキシエチル基、シクロヘキシルエチル基若しくはアリールエチル基であり、溶解性、熱安定性が向上する。 (—Rb-Q) is particularly preferably a methyl group, an aryloxyethyl group, a cyclohexylethyl group, or an arylethyl group, which improves solubility and thermal stability.
 Ra、Rb及びQの少なくとも2つが互いに結合して環を形成する場合としては、例えば、Rb及びQのいずれかとRaとが結合してプロピレン基又はブチレン基を形成して、酸素原子を含有する5員環又は6員環を形成する場合が挙げられる。 In the case where at least two of Ra, Rb and Q are bonded to each other to form a ring, for example, any of Rb and Q and Ra are bonded to form a propylene group or a butylene group and contain an oxygen atom The case where a 5-membered ring or a 6-membered ring is formed is mentioned.
 Ra、Rb及びQの炭素数の総和をNと表記すると、Nが大きい場合には一般式(III)で表される基が脱離する前後の、樹脂(a)のアルカリ溶解速度変化が大きくなり、溶解コントラストが硬調化して解像性が向上する。Nの範囲としては、好ましくは2~20であり、2~15が特に好ましい。Nが20以下であると、高分子化合物のガラス転移温度が低下することが抑制され、更に酸分解性基からの脱離物がパターン上に付着する欠陥の生成が抑制される。 When the total carbon number of Ra, Rb and Q is expressed as N C , when N C is large, the alkali dissolution rate change of the resin (a) before and after the removal of the group represented by the general formula (III) is eliminated Increases, the dissolution contrast becomes harder, and the resolution is improved. The range of N C is preferably 2 to 20, and 2 to 15 is particularly preferable. When N C is 20 or less, the glass transition temperature of the polymer compound is suppressed from being lowered, and further, the generation of defects in which a desorbed substance from the acid-decomposable group adheres to the pattern is suppressed.
 Ra、Rb及びQの少なくとも1つが、電子求引性基ないしは電子求引性基を有する基であることが好ましい。これにより、前記一般式(1)で表される繰り返し単位を有する樹脂(a)において、保存中の酸分解性基の分解を抑制でき、パターニング性の低下を防ぐことができる。
 電子求引性基としては、例えば、アルコキシ基、アリール基、アルケニル基、アルキニル基、ハロゲン原子、アシル基、アリールカルボニル基、アルコキシカルボニル基、アリールオキシカルボニル基、アリールオキシ基、ニトリル基(シアノ基)、アルキルスルホニル基、アリールスルホニル基、ニトロ基等が挙げられ、アルコキシ基、アリール基、アシル基であることが好ましい。
At least one of Ra, Rb and Q is preferably an electron-withdrawing group or a group having an electron-withdrawing group. Thereby, in resin (a) which has a repeating unit represented by the said General formula (1), decomposition | disassembly of the acid-decomposable group during preservation | save can be suppressed and the fall of patterning property can be prevented.
Examples of the electron withdrawing group include an alkoxy group, aryl group, alkenyl group, alkynyl group, halogen atom, acyl group, arylcarbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, aryloxy group, nitrile group (cyano group). ), An alkylsulfonyl group, an arylsulfonyl group, a nitro group, and the like, and an alkoxy group, an aryl group, and an acyl group are preferable.
 以下に、酸分解性基としてのアセタールエステル基を構成する前記一般式(III)で表される基の具体例を示すが、これらに限定されるものではない。 Specific examples of the group represented by the general formula (III) constituting the acetal ester group as the acid-decomposable group are shown below, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000029
Figure JPOXMLDOC01-appb-C000029
 前記一般式(1)における-CO、前記一般式(2)における-CO’又は前記一般式(3)における-CO”の熱分解温度が100~220℃であることが好ましく、120~210℃であることがより好ましく、140~200℃であることが特に好ましい。熱分解温度は、例えば、示差熱天秤分析から求めることができる。
 熱分解温度が低すぎると、本発明の感光性樹脂組成物の保存安定性が低下し得る。熱分解温度が高すぎると応力が大きくなりウエハ反りが大きくなるおそれがある。また、膜中に分解物が残存し、アウトガスや信頼性低下の原因となるおそれがある。
 熱分解温度が100~220℃とすることにより、本発明に係る硬化レリーフパターンの応力が更に低くなり、ウエハ反りがより小さくなる。応力が更に低くなる理由は定かではないが、熱分解温度が100~220℃とすることにより、一般式(1)で表される繰り返し単位中の-COが、低温キュア時に-COHとなってからイミド閉環することで、ポリイミド膜の面内配向性が高められ、低応力化するものと推定される。
The thermal decomposition temperature of —CO 2 R 3 in the general formula (1), —CO 2 R 3 ′ in the general formula (2) or —CO 2 R 3 ″ in the general formula (3) is 100 to 220 ° C. Preferably, it is 120 to 210 ° C., more preferably 140 to 200 ° C. The thermal decomposition temperature can be determined, for example, by differential thermobalance analysis.
When the thermal decomposition temperature is too low, the storage stability of the photosensitive resin composition of the present invention may be lowered. If the thermal decomposition temperature is too high, the stress increases and the wafer warpage may increase. In addition, decomposition products remain in the film, which may cause outgassing and decrease in reliability.
By setting the thermal decomposition temperature to 100 to 220 ° C., the stress of the cured relief pattern according to the present invention is further reduced, and the wafer warpage is further reduced. The reason why the stress is further lowered is not clear, but by setting the thermal decomposition temperature to 100 to 220 ° C., —CO 2 R 3 in the repeating unit represented by the general formula (1) is converted to —CO 2 during low temperature curing. It is presumed that the in-plane orientation of the polyimide film is enhanced and the stress is reduced by ring closure of the imide after 2 H.
 上述のような熱分解温度を達成し得るR、R’又はR”の構造として具体的には、
 上記一般式(A1)中のRx~Rxのうち、少なくとも1つが下記一般式(VI)で表される基である構造、
 上記一般式(III)中のRaが上記一般式(IV)又は下記一般式(VII)で表される基である構造などが挙げられる。
Specifically, as the structure of R 3 , R 3 ′ or R 3 ″ capable of achieving the thermal decomposition temperature as described above,
A structure in which at least one of Rx 1 to Rx 3 in the general formula (A1) is a group represented by the following general formula (VI);
Examples include a structure in which Ra in the general formula (III) is a group represented by the general formula (IV) or the following general formula (VII).
Figure JPOXMLDOC01-appb-C000030
Figure JPOXMLDOC01-appb-C000030
 上記一般式(VI)中、
 R~Rは、それぞれ独立に、水素原子、アルキル基(直鎖若しくは分岐)又はシクロアルキル基(単環若しくは多環)を表し、R~Rの少なくとも1つは水素原子である。
In the general formula (VI),
R 7 to R 8 each independently represents a hydrogen atom, an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic), and at least one of R 7 to R 8 is a hydrogen atom. .
Figure JPOXMLDOC01-appb-C000031
Figure JPOXMLDOC01-appb-C000031
 上記一般式(VII)中、
 Rhはアルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子を表す。
 R~Rについてのアルキル基、シクロアルキル基の具体例、好ましい例としては、Rx~Rxについてのアルキル基、シクロアルキル基として前述した具体例、好ましい例と同様のものが挙げられる。
 Rhとしてのアルキル基、シクロアルキル基、アリール基、アラルキル基又はアルコキシ基は一般式(1)におけるRについてのアルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基として前述したものと同様のものが挙げられる。
 Rhとしてのアリールオキシ基としては、炭素数6~10のアリールオキシ基が好ましく、具体的にはフェノキシ、トルイルオキシ、1-ナフトキシ等が挙げられる。
 Rhとしてのアルコキシカルボニル基としては、炭素数1~10のアルコキシカルボニル基が好ましく、具体的にはメトキシカルボニル、エトキシカルボニル、直鎖又は分岐プロポキシカルボニル、シクロペンチルオキシカルボニル、シクロヘキシルオキシカルボニル等が挙げられる。
 Rhとしてのアリールオキシカルボニル基のアリールオキシ部分としては、前述のアリールオキシ基と同様のものが挙げられる。
In the general formula (VII),
Rh represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group or a halogen atom.
Specific examples and preferred examples of the alkyl group and cycloalkyl group for R 7 to R 8 include the same as the specific examples and preferred examples described above for the alkyl group and cycloalkyl group for Rx 1 to Rx 3. .
The alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group as Rh is the same as that described above as the alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group for R 3 in the general formula (1). Can be mentioned.
The aryloxy group as Rh is preferably an aryloxy group having 6 to 10 carbon atoms, and specific examples include phenoxy, toluyloxy, 1-naphthoxy and the like.
The alkoxycarbonyl group as Rh is preferably an alkoxycarbonyl group having 1 to 10 carbon atoms, and specific examples include methoxycarbonyl, ethoxycarbonyl, linear or branched propoxycarbonyl, cyclopentyloxycarbonyl, cyclohexyloxycarbonyl and the like.
Examples of the aryloxy moiety of the aryloxycarbonyl group as Rh include the same aryloxy groups as those described above.
 本発明においては、Rにおいて水素原子と有機基を混在させることができる。樹脂(a)中の全Rに対して各々100モル%~20モル%であることが好ましく、100モル%~40モル%が有機基であることがより好ましい。このRの水素原子と有機基の量を調整することで、アルカリ水溶液に対する溶解速度が変化するので、この調整により適度な溶解速度を有した感光性樹脂組成物を得ることができる。
 樹脂(a)中の全ての-COのうち、酸の作用により分解しアルカリ可溶性基を生じる基が占める割合、いわゆる保護率は、40~100%であることが好ましく、45~100%であることがより好ましい。
 また、本発明においては、一般式(1)で表される構造単位を主成分とするポリマーの末端に末端封止剤を反応させることができる。末端封止剤は、モノアミン、酸無水物、モノカルボン酸、モノ酸クロリド化合物、モノ活性エステル化合物などを用いることができる。末端封止剤を反応させることにより、構造単位の繰り返し数、すなわち分子量を好ましい範囲に制御できる点で好ましい。更に、末端封止剤により、末端アミンと発生酸の中和による酸失活を抑制する事ができる。また、末端に末端封止剤を反応させることにより、末端基として種々の有機基、例えば炭素-炭素不飽和結合を有する架橋反応性基を導入することができる。
In the present invention, a hydrogen atom and an organic group can be mixed in R 3 . It is preferably 100 mol% to 20 mol%, more preferably 100 mol% to 40 mol%, respectively, based on the total R 3 in the resin (a). By adjusting the amount of the hydrogen atom and organic group of R 3, the dissolution rate with respect to the aqueous alkali solution is changed, and by this adjustment, a photosensitive resin composition having an appropriate dissolution rate can be obtained.
Of all —CO 2 R 3 in the resin (a), the proportion of the group that decomposes by the action of an acid to generate an alkali-soluble group, the so-called protection rate, is preferably 40 to 100%, and preferably 45 to 100 % Is more preferable.
Moreover, in this invention, terminal blocker can be made to react with the terminal of the polymer which has as a main component the structural unit represented by General formula (1). As the terminal capping agent, monoamine, acid anhydride, monocarboxylic acid, monoacid chloride compound, monoactive ester compound and the like can be used. By making terminal blocker react, it is preferable at the point which can control the repeating number of a structural unit, ie, molecular weight, in a preferable range. Furthermore, acid deactivation due to neutralization of the terminal amine and the generated acid can be suppressed by the terminal blocking agent. In addition, by reacting a terminal blocking agent at the terminal, various organic groups such as a crosslinking reactive group having a carbon-carbon unsaturated bond can be introduced as a terminal group.
 末端封止剤に用いられるモノアミンは、5-アミノ-8-ヒドロキシキノリン、4-アミノ-8-ヒドロキシキノリン、1-ヒドロキシ-8-アミノナフタレン、1-ヒドロキシ-7-アミノナフタレン、1-ヒドロキシ-6-アミノナフタレン、1-ヒドロキシ-5-アミノナフタレン、1-ヒドロキシ-4-アミノナフタレン、1-ヒドロキシ-3-アミノナフタレン、1-ヒドロキシ-2-アミノナフタレン、1-アミノ-7-ヒドロキシナフタレン、2-ヒドロキシ-7-アミノナフタレン、2-ヒドロキシ-6-アミノナフタレン、2-ヒドロキシ-5-アミノナフタレン、2-ヒドロキシ-4-アミノナフタレン、2-ヒドロキシ-3-アミノナフタレン、1-アミノ-2-ヒドロキシナフタレン、1-カルボキシ-8-アミノナフタレン、1-カルボキシ-7-アミノナフタレン、1-カルボキシ-6-アミノナフタレン、1-カルボキシ-5-アミノナフタレン、1-カルボキシ-4-アミノナフタレン、1-カルボキシ-3-アミノナフタレン、1-カルボキシ-2-アミノナフタレン、1-アミノ-7-カルボキシナフタレン、2-カルボキシ-7-アミノナフタレン、2-カルボキシ-6-アミノナフタレン、2-カルボキシ-5-アミノナフタレン、2-カルボキシ-4-アミノナフタレン、2-カルボキシ-3-アミノナフタレン、1-アミノ-2-カルボキシナフタレン、2-アミノニコチン酸、4-アミノニコチン酸、5-アミノニコチン酸、6-アミノニコチン酸、4-アミノサリチル酸、5-アミノサリチル酸、6-アミノサリチル酸、3-アミノ-O-トルイック酸、アメライド、2-アミノ安息香酸、3-アミノ安息香酸、4-アミノ安息香酸、2-アミノベンゼンスルホン酸、3-アミノベンゼンスルホン酸、4-アミノベンゼンスルホン酸、3-アミノ-4,6-ジヒドロキシピリミジン、2-アミノフェノール、3-アミノフェノール、4-アミノフェノール、5-アミノ-8-メルカプトキノリン、4-アミノ-8-メルカプトキノリン、1-メルカプト-8-アミノナフタレン、1-メルカプト-7-アミノナフタレン、1-メルカプト-6-アミノナフタレン、1-メルカプト-5-アミノナフタレン、1-メルカプト-4-アミノナフタレン、1-メルカプト-3-アミノナフタレン、1-メルカプト-2-アミノナフタレン、1-アミノ-7-メルカプトナフタレン、2-メルカプト-7-アミノナフタレン、2-メルカプト-6-アミノナフタレン、2-メルカプト-5-アミノナフタレン、2-メルカプト-4-アミノナフタレン、2-メルカプト-3-アミノナフタレン、1-アミノ-2-メルカプトナフタレン、3-アミノ-4,6-ジメルカプトピリミジン、2-アミノチオフェノール、3-アミノチオフェノール、4-アミノチオフェノール、2-エチニルアニリン、3-エチニルアニリン、4-エチニルアニリン、2,4-ジエチニルアニリン、2,5-ジエチニルアニリン、2,6-ジエチニルアニリン、3,4-ジエチニルアニリン、3,5-ジエチニルアニリン、1-エチニル-2-アミノナフタレン、1-エチニル-3-アミノナフタレン、1-エチニル-4-アミノナフタレン、1-エチニル-5-アミノナフタレン、1-エチニル-6-アミノナフタレン、1-エチニル-7-アミノナフタレン、1-エチニル-8-アミノナフタレン、2-エチニル-1-アミノナフタレン、2-エチニル-3-アミノナフタレン、2-エチニル-4-アミノナフタレン、2-エチニル-5-アミノナフタレン、2-エチニル-6-アミノナフタレン、2-エチニル-7-アミノナフタレン、2-エチニル-8-アミノナフタレン、3,5-ジエチニル-1-アミノナフタレン、3,5-ジエチニル-2-アミノナフタレン、3,6-ジエチニル-1-アミノナフタレン、3,6-ジエチニル-2-アミノナフタレン、3,7-ジエチニル-1-アミノナフタレン、3,7-ジエチニル-2-アミノナフタレン、4,8-ジエチニル-1-アミノナフタレン、4,8-ジエチニル-2-アミノナフタレン等が挙げられるが、これらに限定されるものではない。 Monoamines used for end-capping agents are 5-amino-8-hydroxyquinoline, 4-amino-8-hydroxyquinoline, 1-hydroxy-8-aminonaphthalene, 1-hydroxy-7-aminonaphthalene, 1-hydroxy- 6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 1-hydroxy-3-aminonaphthalene, 1-hydroxy-2-aminonaphthalene, 1-amino-7-hydroxynaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 2-hydroxy-4-aminonaphthalene, 2-hydroxy-3-aminonaphthalene, 1-amino-2 -Hydroxynaphthalene, 1-carboxy-8-amino Naphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 1-carboxy-4-aminonaphthalene, 1-carboxy-3-aminonaphthalene, 1-carboxy -2-aminonaphthalene, 1-amino-7-carboxynaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-carboxy-4-aminonaphthalene 2-carboxy-3-aminonaphthalene, 1-amino-2-carboxynaphthalene, 2-aminonicotinic acid, 4-aminonicotinic acid, 5-aminonicotinic acid, 6-aminonicotinic acid, 4-aminosalicylic acid, 5- Aminosalicylic acid, 6-aminosalicylic acid, 3- Mino-O-toluic acid, amelide, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-aminobenzoic acid Amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 5-amino-8-mercaptoquinoline, 4-amino-8-mercaptoquinoline, 1-mercapto-8-aminonaphthalene 1-mercapto-7-aminonaphthalene, 1-mercapto-6-aminonaphthalene, 1-mercapto-5-aminonaphthalene, 1-mercapto-4-aminonaphthalene, 1-mercapto-3-aminonaphthalene, 1-mercapto- 2-aminonaphthalene, 1-amino-7-mercaptonaphtha Len, 2-mercapto-7-aminonaphthalene, 2-mercapto-6-aminonaphthalene, 2-mercapto-5-aminonaphthalene, 2-mercapto-4-aminonaphthalene, 2-mercapto-3-aminonaphthalene, 1-amino -2-Mercaptonaphthalene, 3-amino-4,6-dimercaptopyrimidine, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline 2,4-diethynylaniline, 2,5-diethynylaniline, 2,6-diethynylaniline, 3,4-diethynylaniline, 3,5-diethynylaniline, 1-ethynyl-2-aminonaphthalene, 1-ethynyl-3-aminonaphthalene, 1-ethynyl-4-aminonaphthalene 1-ethynyl-5-aminonaphthalene, 1-ethynyl-6-aminonaphthalene, 1-ethynyl-7-aminonaphthalene, 1-ethynyl-8-aminonaphthalene, 2-ethynyl-1-aminonaphthalene, 2-ethynyl- 3-aminonaphthalene, 2-ethynyl-4-aminonaphthalene, 2-ethynyl-5-aminonaphthalene, 2-ethynyl-6-aminonaphthalene, 2-ethynyl-7-aminonaphthalene, 2-ethynyl-8-aminonaphthalene, 3,5-diethynyl-1-aminonaphthalene, 3,5-diethynyl-2-aminonaphthalene, 3,6-diethynyl-1-aminonaphthalene, 3,6-diethynyl-2-aminonaphthalene, 3,7-diethynyl- 1-aminonaphthalene, 3,7-diethynyl-2-aminonaphthalene, 4,8-diethy -1-aminonaphthalene, 4,8-diethynyl-2-amino-naphthalene, and the like, but is not limited thereto.
 これらのうち、5-アミノ-8-ヒドロキシキノリン、1-ヒドロキシ-7-アミノナフタレン、1-ヒドロキシ-6-アミノナフタレン、1-ヒドロキシ-5-アミノナフタレン、1-ヒドロキシ-4-アミノナフタレン、2-ヒドロキシ-7-アミノナフタレン、2-ヒドロキシ-6-アミノナフタレン、2-ヒドロキシ-5-アミノナフタレン、1-カルボキシ-7-アミノナフタレン、1-カルボキシ-6-アミノナフタレン、1-カルボキシ-5-アミノナフタレン、2-カルボキシ-7-アミノナフタレン、2-カルボキシ-6-アミノナフタレン、2-カルボキシ-5-アミノナフタレン、2-アミノ安息香酸、3-アミノ安息香酸、4-アミノ安息香酸、4-アミノサリチル酸、5-アミノサリチル酸、6-アミノサリチル酸、2-アミノベンゼンスルホン酸、3-アミノベンゼンスルホン酸、4-アミノベンゼンスルホン酸、3-アミノ-4,6-ジヒドロキシピリミジン、2-アミノフェノール、3-アミノフェノール、4-アミノフェノール、2-アミノチオフェノール、3-アミノチオフェノール、4-アミノチオフェノール、3-エチニルアニリン、4-エチニルアニリン、3,4-ジエチニルアニリン、3,5-ジエチニルアニリン等が好ましい。 Of these, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2 -Hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5 Aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4- Amino salicylic acid, 5-amino salicylic acid, 6-amino salicy Acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2 -Aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, 3-ethynylaniline, 4-ethynylaniline, 3,4-diethynylaniline, 3,5-diethynylaniline and the like are preferable.
 末端封止剤として用いられる酸無水物、モノカルボン酸、モノ酸クロリド化合物、活性エステル化合物は、無水フタル酸、無水マレイン酸、無水ナジック酸、シクロヘキサンジカルボン酸無水物、3-ヒドロキシフタル酸無水物等の酸無水物、2-カルボキシフェノール、3-カルボキシフェノール、4-カルボキシフェノール、2-カルボキシチオフェノール、3-カルボキシチオフェノール、4-カルボキシチオフェノール、1-ヒドロキシ-8-カルボキシナフタレン、1-ヒドロキシ-7-カルボキシナフタレン、1-ヒドロキシ-6-カルボキシナフタレン、1-ヒドロキシ-5-カルボキシナフタレン、1-ヒドロキシ-4-カルボキシナフタレン、1-ヒドロキシ-3-カルボキシナフタレン、1-ヒドロキシ-2-カルボキシナフタレン、1-メルカプト-8-カルボキシナフタレン、1-メルカプト-7-カルボキシナフタレン、1-メルカプト-6-カルボキシナフタレン、1-メルカプト-5-カルボキシナフタレン、1-メルカプト-4-カルボキシナフタレン、1-メルカプト-3-カルボキシナフタレン、1-メルカプト-2-カルボキシナフタレン、2-カルボキシベンゼンスルホン酸、3-カルボキシベンゼンスルホン酸、4-カルボキシベンゼンスルホン酸、2-エチニル安息香酸、3-エチニル安息香酸、4-エチニル安息香酸、2,4-ジエチニル安息香酸、2,5-ジエチニル安息香酸、2,6-ジエチニル安息香酸、3,4-ジエチニル安息香酸、3,5-ジエチニル安息香酸、2-エチニル-1-ナフトエ酸、3-エチニル-1-ナフトエ酸、4-エチニル-1-ナフトエ酸、5-エチニル-1-ナフトエ酸、6-エチニル-1-ナフトエ酸、7-エチニル-1-ナフトエ酸、8-エチニル-1-ナフトエ酸、2-エチニル-2-ナフトエ酸、3-エチニル-2-ナフトエ酸、4-エチニル-2-ナフトエ酸、5-エチニル-2-ナフトエ酸、6-エチニル-2-ナフトエ酸、7-エチニル-2-ナフトエ酸、8-エチニル-2-ナフトエ酸等のモノカルボン酸類及びこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、及びテレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、3-ヒドロキシフタル酸、5-ノルボルネン-2,3-ジカルボン酸、1,2-ジカルボキシナフタレン、1,3-ジカルボキシナフタレン、1,4-ジカルボキシナフタレン、1,5-ジカルボキシナフタレン、1,6-ジカルボキシナフタレン、1,7-ジカルボキシナフタレン、1,8-ジカルボキシナフタレン、2,3-ジカルボキシナフタレン、2,6-ジカルボキシナフタレン、2,7-ジカルボキシナフタレン等のジカルボン酸類のモノカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、モノ酸クロリド化合物とN-ヒドロキシベンゾトリアゾールやN-ヒドロキシ-5-ノルボルネン-2,3-ジカルボキシイミドとの反応により得られる活性エステル化合物等が挙げられる。 Acid anhydrides, monocarboxylic acids, monoacid chloride compounds and active ester compounds used as end-capping agents are phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, 3-hydroxyphthalic anhydride Acid anhydrides such as 2-carboxyphenol, 3-carboxyphenol, 4-carboxyphenol, 2-carboxythiophenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-8-carboxynaphthalene, 1- Hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-hydroxy-4-carboxynaphthalene, 1-hydroxy-3-carboxynaphthalene, 1-hydroxy-2-carbo Sinaphthalene, 1-mercapto-8-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 1-mercapto-4-carboxynaphthalene, 1- Mercapto-3-carboxynaphthalene, 1-mercapto-2-carboxynaphthalene, 2-carboxybenzenesulfonic acid, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, 2-ethynylbenzoic acid, 3-ethynylbenzoic acid, 4 -Ethynylbenzoic acid, 2,4-diethynylbenzoic acid, 2,5-diethynylbenzoic acid, 2,6-diethynylbenzoic acid, 3,4-diethynylbenzoic acid, 3,5-diethynylbenzoic acid, 2-ethynyl-1 -Naphthoic acid, 3-ethynyl-1- Futheic acid, 4-ethynyl-1-naphthoic acid, 5-ethynyl-1-naphthoic acid, 6-ethynyl-1-naphthoic acid, 7-ethynyl-1-naphthoic acid, 8-ethynyl-1-naphthoic acid, 2- Ethynyl-2-naphthoic acid, 3-ethynyl-2-naphthoic acid, 4-ethynyl-2-naphthoic acid, 5-ethynyl-2-naphthoic acid, 6-ethynyl-2-naphthoic acid, 7-ethynyl-2-naphthoic acid Acids, monocarboxylic acids such as 8-ethynyl-2-naphthoic acid, and monoacid chloride compounds in which these carboxyl groups are acid chloride, and terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 3-hydroxyphthalic acid, 5-norbornene-2,3-dicarboxylic acid, 1,2-dicarboxynaphthalene, 1,3-dicarboxynaphthalene, 1,4-dicarbo Xinaphthalene, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, 1,8-dicarboxynaphthalene, 2,3-dicarboxynaphthalene, 2,6-dicarboxynaphthalene , Monoacid chloride compounds in which only the monocarboxylic group of dicarboxylic acids such as 2,7-dicarboxynaphthalene is acid chloride, monoacid chloride compounds and N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3- Examples include active ester compounds obtained by reaction with dicarboximide.
 これらのうち、無水フタル酸、無水マレイン酸、無水ナジック酸、シクロヘキサンジカルボン酸無水物、3-ヒドロキシフタル酸無水物等の酸無水物、3-カルボキシフェノール、4-カルボキシフェノール、3-カルボキシチオフェノール、4-カルボキシチオフェノール、1-ヒドロキシ-7-カルボキシナフタレン、1-ヒドロキシ-6-カルボキシナフタレン、1-ヒドロキシ-5-カルボキシナフタレン、1-メルカプト-7-カルボキシナフタレン、1-メルカプト-6-カルボキシナフタレン、1-メルカプト-5-カルボキシナフタレン、3-カルボキシベンゼンスルホン酸、4-カルボキシベンゼンスルホン酸、3-エチニル安息香酸、4-エチニル安息香酸、3,4-ジエチニル安息香酸、3,5-ジエチニル安息香酸等のモノカルボン酸類、及びこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、テレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、1,5-ジカルボキシナフタレン、1,6-ジカルボキシナフタレン、1,7-ジカルボキシナフタレン、2,6-ジカルボキシナフタレン等のジカルボン酸類のモノカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、モノ酸クロリド化合物とN-ヒドロキシベンゾトリアゾールやN-ヒドロキシ-5-ノルボルネン-2,3-ジカルボキシイミドとの反応により得られる活性エステル化合物等が好ましい。 Among these, phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, acid anhydrides such as 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxy Naphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, 3-ethynylbenzoic acid, 4-ethynylbenzoic acid, 3,4-diethynylbenzoic acid, 3,5-diethynyl Benzo Monocarboxylic acids such as these, and monoacid chloride compounds in which these carboxyl groups are acid chloride, terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, Monoacid chloride compounds in which only monocarboxylic groups of dicarboxylic acids such as 1,7-dicarboxynaphthalene and 2,6-dicarboxynaphthalene are acid chlorided, monoacid chloride compounds and N-hydroxybenzotriazole and N-hydroxy-5 -Active ester compounds obtained by reaction with norbornene-2,3-dicarboximide are preferred.
 末端封止剤に用いられるモノアミンの導入割合は、全アミン成分に対して、0.1~60モル%の範囲が好ましく、特に好ましくは5~50モル%である。末端封止剤として用いられる酸無水物、モノカルボン酸、モノ酸クロリド化合物及びモノ活性エステル化合物から選ばれた化合物の導入割合は、ジアミン成分に対して、0.1~100モル%の範囲が好ましく、特に好ましくは5~90モル%である。複数の末端封止剤を反応させることにより、複数の異なる末端基を導入しても良い。 The introduction ratio of the monoamine used for the terminal blocking agent is preferably in the range of 0.1 to 60 mol%, particularly preferably 5 to 50 mol%, based on the total amine component. The introduction ratio of the compound selected from the acid anhydride, monocarboxylic acid, monoacid chloride compound and monoactive ester compound used as the end-capping agent is in the range of 0.1 to 100 mol% with respect to the diamine component. The amount is particularly preferably 5 to 90 mol%. A plurality of different terminal groups may be introduced by reacting a plurality of terminal blocking agents.
 ポリマー中に導入された末端封止剤は、以下の方法で容易に検出できる。例えば、末端封止剤が導入されたポリマーを酸性溶液に溶解し、ポリマーの構成単位であるアミン成分と酸無水物成分に分解する。これをガスクロマトグラフィー(GC)や、NMR測定することにより、末端封止剤を容易に検出できる。その他に、末端封止剤が導入されたポリマー成分を直接、熱分解ガスクロマトグラフ(PGC)や赤外スペクトル及び13CNMRスペクトル測定することによっても、容易に検出可能である。 The end-capping agent introduced into the polymer can be easily detected by the following method. For example, a polymer having an end-capping agent introduced therein is dissolved in an acidic solution and decomposed into an amine component and an acid anhydride component that are constituent units of the polymer. The end-capping agent can be easily detected by gas chromatography (GC) or NMR measurement. In addition, it can also be easily detected by directly measuring the polymer component into which the end capping agent has been introduced by pyrolysis gas chromatography (PGC), infrared spectrum and 13 CNMR spectrum.
 本発明の感光性樹脂組成物に用いられる樹脂(a)は、一般式(1)で表される構造単位を主成分とするものであることが好ましい。ここでいう主成分とは、一般式(1)で表される構造単位を70モル%以上含有していることを意味する。より好ましくは80モル%以上、最も好ましくは90モル%以上である。
 本発明に用いられる樹脂は、一般式(1)で表される構造単位と他の構造単位との共重合体であっても、あるいは、一般式(1)で表される構造単位を含有する複数の樹脂の混合物であってもよい。
 更には、一般式(1)で表される構造単位を含有する樹脂と一般式(1)で表される構造単位を含有しない樹脂(例えば、一般式(1)において、Rが芳香環のみの樹脂)との混合物であってもよい。この場合、一般式(1)で表される構造単位を含有する樹脂は、50質量%以上含有することが好ましく、75質量%以上含有することがより好ましい。
 共重合あるいは混合に用いられる構造単位の種類及び量は、最終加熱処理によって得られるポリマーの耐熱性を損なわない範囲で選択することが好ましい。
The resin (a) used in the photosensitive resin composition of the present invention preferably has a structural unit represented by the general formula (1) as a main component. The main component as used herein means that 70 mol% or more of the structural unit represented by the general formula (1) is contained. More preferably, it is 80 mol% or more, and most preferably 90 mol% or more.
The resin used in the present invention is a copolymer of the structural unit represented by the general formula (1) and other structural units, or contains the structural unit represented by the general formula (1). It may be a mixture of a plurality of resins.
Furthermore, a resin containing the structural unit represented by the general formula (1) and a resin not containing the structural unit represented by the general formula (1) (for example, in the general formula (1), R 2 is an aromatic ring only. A resin). In this case, the resin containing the structural unit represented by the general formula (1) is preferably contained in an amount of 50% by mass or more, and more preferably 75% by mass or more.
The type and amount of structural units used for copolymerization or mixing are preferably selected within a range that does not impair the heat resistance of the polymer obtained by the final heat treatment.
 前記一般式(1)で表される繰り返し単位を含む樹脂(a)は、アルカリ溶解速度、膜物性等の観点から、質量平均分子量で、200,000以下であることが好ましく、1,000~200,000がより好ましく、2,000~100,000が更に好ましく、3,000~100,000が特に好ましい。この分子量範囲とすることにより、応力が低く、機械特性に優れ、更に現像欠陥の少ない解像性に優れた感光膜を得ることが出来る。なお、本発明において分子量は、ゲルパーミエーションクロマトグラフィー法により測定し、標準ポリスチレン検量線を用いて求めることができる。
 分散度(分子量分布)は、1.0~4.0であることが好ましく、1.0~3.5であることがより好ましい。
The resin (a) containing the repeating unit represented by the general formula (1) preferably has a mass average molecular weight of 200,000 or less from the viewpoint of alkali dissolution rate, film physical properties, etc. 200,000 is more preferable, 2,000 to 100,000 is more preferable, and 3,000 to 100,000 is particularly preferable. By adjusting to this molecular weight range, it is possible to obtain a photosensitive film having low stress, excellent mechanical properties, and excellent resolution with few development defects. In the present invention, the molecular weight can be measured by a gel permeation chromatography method and determined using a standard polystyrene calibration curve.
The dispersity (molecular weight distribution) is preferably 1.0 to 4.0, and more preferably 1.0 to 3.5.
 本発明における樹脂(a)の製造方法は、従来公知の方法がいずれも用いられてよい(例えば、最新ポリイミド~基礎と応用~(日本ポリイミド研究会編)参照。)。
 例えば、ポリアミド酸又はポリアミド酸エステルの場合低温中でテトラカルボン酸二無水物とジアミン化合物を反応させる方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後アミンと縮合剤の存在下で反応させる方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後残りのジカルボン酸を酸クロリド化し、アミンと反応させる方法、側鎖のカルボキシル基の一部を熱処理によってイミド化させたり、エステル化試薬などを用いてアルキルエステル化する方法などがある。
 中でも、有機溶媒中、ジアミン化合物とテトラカルボン酸二無水物とを-20~50℃で数分間から数日間反応させることにより、ポリアミド酸を得、次いで塩基性下ハライド類と反応や、酸性下ビニルエーテル類との反応、あるいはジメチルホルムアミドのジアルキルアセタールとの反応よって一般式(1)のポリアミド酸エステルを得る方法(合成方法1)、また、Makromol.Chem.,194,511~521(1993)に記載されているような酸分解性基を有するジカルボン酸を合成し、次いでジアミンと重縮合させる方法(合成方法2)が、コスト、操作簡便性、性能再現性の面で好ましい。
(合成方法1)
As the method for producing the resin (a) in the present invention, any conventionally known method may be used (see, for example, the latest polyimide: basics and applications (edited by Japan Polyimide Research Group)).
For example, in the case of polyamic acid or polyamic acid ester, a method of reacting tetracarboxylic dianhydride and diamine compound at low temperature, a diester is obtained by tetracarboxylic dianhydride and alcohol, and then in the presence of an amine and a condensing agent. A method of reacting, obtaining a diester by tetracarboxylic dianhydride and an alcohol, then converting the remaining dicarboxylic acid to acid chloride and reacting with an amine, imidating a part of the side chain carboxyl group by heat treatment, There is a method of alkyl esterification using an esterification reagent or the like.
In particular, polyamic acid is obtained by reacting a diamine compound and tetracarboxylic dianhydride in an organic solvent at −20 to 50 ° C. for several minutes to several days, and then reacting with basic halides or under acidic conditions. A method for obtaining a polyamic acid ester of the general formula (1) by reaction with vinyl ethers or by reaction with dimethylformamide with a dialkyl acetal (Synthesis Method 1), and Makromol. Chem. , 194, 511 to 521 (1993), a method of synthesizing a dicarboxylic acid having an acid-decomposable group and then polycondensing with a diamine (Synthesis Method 2) is cost, operational simplicity, and performance reproduction. From the viewpoint of sex.
(Synthesis method 1)
Figure JPOXMLDOC01-appb-C000032
Figure JPOXMLDOC01-appb-C000032
(合成方法2) (Synthesis method 2)
Figure JPOXMLDOC01-appb-C000033
Figure JPOXMLDOC01-appb-C000033
 上記スキーム中、R、R及びRは一般式(1)におけるものと同義である。
 このポリアミド酸の合成反応に使用できる有機溶媒としては、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N-メチル-2-ピロリジノン、1,3-ジメチル-2-イミダゾリジノン等のアミド系溶媒、ベンゼン、アニソール、ジフェニルエーテル、ニトロベンゼン、ベンゾニトリル、ピリジンのような芳香族系溶媒、クロロホルム、ジクロロメタン、1,2-ジクロロエタン、1,1,2,2-テトラクロロエタンのようなハロゲン系溶媒、テトラヒドロフラン、ジオキサン、ジグリムのようなエーテル系溶媒等を例示することができる。中でもアミド系溶媒が好ましく、高分子量のポリアミド酸を得ることができる。
In the above scheme, R 1 , R 2 and R 3 have the same meaning as in general formula (1).
Examples of organic solvents that can be used in the synthesis reaction of the polyamic acid include amides such as N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidinone, and 1,3-dimethyl-2-imidazolidinone. Solvents, aromatic solvents such as benzene, anisole, diphenyl ether, nitrobenzene, benzonitrile, pyridine, halogen solvents such as chloroform, dichloromethane, 1,2-dichloroethane, 1,1,2,2-tetrachloroethane, Examples thereof include ether solvents such as tetrahydrofuran, dioxane and diglyme. Of these, amide solvents are preferred, and high molecular weight polyamic acid can be obtained.
 重合反応に用いる有機溶媒の沸点は50℃以上が好ましく、より好ましくは100℃以上であり、特に好ましくは150℃以上である。
 反応液中の溶質の濃度は好ましくは1~50質量%、より好ましくは5~30質量%、特に好ましくは10~20質量%である。
The boiling point of the organic solvent used for the polymerization reaction is preferably 50 ° C. or higher, more preferably 100 ° C. or higher, and particularly preferably 150 ° C. or higher.
The concentration of the solute in the reaction solution is preferably 1 to 50% by mass, more preferably 5 to 30% by mass, and particularly preferably 10 to 20% by mass.
 上記のようにして得られたポリアミド酸エステルは、成分(b)と共に半導体基板などの基板上に製膜され、続くリソグラフィー工程によってレリーフパターンを形成させることが出来る。このパターンの加熱処理により、ポリアミド酸エステルあるいはポリアミド酸の脱水閉環が生じ、ポリイミド硬化膜が得られる。 The polyamic acid ester obtained as described above is formed on a substrate such as a semiconductor substrate together with the component (b), and a relief pattern can be formed by a subsequent lithography process. By heat treatment of this pattern, polyamic acid ester or polyamic acid is dehydrated and closed, and a cured polyimide film is obtained.
 本発明において、上記一般式(1)にて示される構造単位を有するポリアミド酸エステルは、該前駆体から形成される膜が膜厚20μm当たりi線透過率が1%以上であり、5%以上であることが好ましく、10%以上であることがより好ましく、10~80%であることが特に好ましい。この値が1%未満であると、高解像度で、形状の良好なパターンを形成できる感光性樹脂組成物が得られにくい。i線(波長365nmの光)の透過率は、分光光度計(例えば日立U3410型、(株)日立製作所製)により測定することができる。 In the present invention, the polyamic acid ester having the structural unit represented by the general formula (1) has a film formed from the precursor having an i-line transmittance of 1% or more per film thickness of 20 μm, and 5% or more. It is preferably 10% or more, more preferably 10 to 80%. When this value is less than 1%, it is difficult to obtain a photosensitive resin composition capable of forming a pattern with high resolution and good shape. The transmittance of i-line (light having a wavelength of 365 nm) can be measured with a spectrophotometer (for example, Hitachi U3410 type, manufactured by Hitachi, Ltd.).
 また、上記一般式(1)にて示される構造単位を有するポリアミド酸エステルからイミド閉環して形成されるポリイミド硬化膜の残留応力は、25MPa以下であることが好ましく、20MPa以下であることがより好ましい。
 ここで、25MPaを超えると、シリコンウエハの反り量やシリコンチップ内部での残留歪みが大きくなるという欠点がある。なお、ポリイミド膜の残留応力は、常温(25℃)において、薄膜ストレス測定装置(例えば、テンコール社製、FLX-2320型)により測定することができる。
Further, the residual stress of the cured polyimide film formed by imide ring closure from the polyamic acid ester having the structural unit represented by the general formula (1) is preferably 25 MPa or less, more preferably 20 MPa or less. preferable.
Here, when it exceeds 25 MPa, there is a drawback that the warpage amount of the silicon wafer and the residual strain inside the silicon chip increase. The residual stress of the polyimide film can be measured at a normal temperature (25 ° C.) with a thin film stress measuring device (for example, FLX-2320 manufactured by Tencor).
 これらの特性を満たす上記一般式(1)にて示される構造単位を有するポリアミド酸エステルは、適切なモノマーを選択することにより、芳香環π共役長が抑えられ、剛直でかつ直線な主鎖を形成可能な構造を有することになる。
 また、本発明において、樹脂(a)は、1種で使用してもよいし、複数併用してもよい。更に、樹脂(a)以外の樹脂を併用してもよい。
The polyamic acid ester having the structural unit represented by the above general formula (1) that satisfies these characteristics can suppress the aromatic ring π conjugation length by selecting an appropriate monomer, and has a rigid and straight main chain. It will have a structure that can be formed.
In the present invention, the resin (a) may be used alone or in combination. Further, a resin other than the resin (a) may be used in combination.
(b)活性光線又は放射線の照射により酸を発生する化合物
 本発明の組成物は活性光線又は放射線の照射により酸を発生する化合物(「光酸発生剤」又は「(b)成分」ともいう)を含有する。これらは2種以上を併用して用いることもできる。また、感度調整のために、増感剤などを併用して用いることもできる。
(B) Compound that generates acid upon irradiation with actinic ray or radiation The composition of the present invention is a compound that generates acid upon irradiation with actinic ray or radiation (also referred to as “photoacid generator” or “(b) component”). Containing. These may be used in combination of two or more. Moreover, a sensitizer etc. can also be used together for sensitivity adjustment.
(b1)光酸発生剤
 光酸発生剤としては、光カチオン重合の光開始剤、光ラジカル重合の光開始剤、色素類の光消色剤、光変色剤、あるいはマイクロレジスト等に使用されている活性光線又は放射線の照射により酸を発生する公知の化合物及びそれらの混合物を適宜に選択して使用することができる。
(B1) Photoacid generator The photoacid generator is used as a photoinitiator for photocationic polymerization, a photoinitiator for radical photopolymerization, a photodecolorant for dyes, a photochromic agent, or a microresist. Known compounds that generate an acid upon irradiation with active light or radiation and mixtures thereof can be appropriately selected and used.
 たとえば、ジアゾニウム塩、ホスホニウム塩、スルホニウム塩、ヨードニウム塩、イミドスルホネート、オキシムスルホネート、ジアゾジスルホン、ジスルホン、o-ニトロベンジルスルホネートを挙げることができる。 Examples include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.
 また、活性光線又は放射線の照射により酸を発生する基、あるいは化合物をポリマーの主鎖又は側鎖に導入した化合物、たとえば、米国特許第3,849,137号、独国特許第3914407号、特開昭63-26653号、特開昭55-164824号、特開昭62-69263号、特開昭63-146038号、特開昭63-163452号、特開昭62-153853号、特開昭63-146029号等に記載の化合物を用いることができる。 Further, a group that generates an acid upon irradiation with actinic rays or radiation, or a compound in which a compound is introduced into the main chain or side chain of the polymer, such as US Pat. No. 3,849,137, German Patent No. 3914407, JP 63-26653, JP 55-164824, JP 62-69263, JP 63-146038, JP 63-163452, JP 62-153853, JP The compounds described in 63-146029 and the like can be used.
 更に米国特許第3,779,778号、欧州特許第126,712号等に記載の光により酸を発生する化合物も使用することができる。 Further, compounds capable of generating an acid by light described in US Pat. No. 3,779,778, European Patent 126,712 and the like can also be used.
 活性光線又は放射線の照射により酸を発生する化合物の内で好ましい化合物として、下記一般式(ZI)、(ZII)、(ZIII)で表される化合物を挙げることができる。 Among the compounds that generate an acid upon irradiation with actinic rays or radiation, compounds represented by the following general formulas (ZI), (ZII), and (ZIII) can be exemplified.
Figure JPOXMLDOC01-appb-C000034
Figure JPOXMLDOC01-appb-C000034
 上記一般式(ZI)において、
 R201、R202及びR203は、各々独立に有機基を表す。
 上記一般式(ZII)、(ZIII)中、
 R204~R207は、各々独立に、アリール基、アルキル基又はシクロアルキル基を表す。
 Xは、非求核性アニオンを表し、好ましくはスルホン酸アニオン、カルボン酸アニオン、ビス(アルキルスルホニル)アミドアニオン、トリス(アルキルスルホニル)メチドアニオン、BF 、PF 、SbF などが挙げられ、好ましくは炭素原子を有する有機アニオンである。
In the general formula (ZI),
R 201 , R 202 and R 203 each independently represents an organic group.
In the general formulas (ZII) and (ZIII),
R 204 to R 207 each independently represents an aryl group, an alkyl group, or a cycloalkyl group.
X represents a non-nucleophilic anion, preferably sulfonate anion, carboxylate anion, bis (alkylsulfonyl) amide anion, tris (alkylsulfonyl) methide anion, BF 4 , PF 6 , SbF 6 An organic anion having a carbon atom is preferable.
 好ましい有機アニオンとしては、下記一般式に示す有機アニオンが挙げられる。 Preferred organic anions include organic anions represented by the following general formula.
Figure JPOXMLDOC01-appb-C000035
Figure JPOXMLDOC01-appb-C000035
 上記一般式に於いて、
 Rcは、有機基を表す。
 Rcにおける有機基として、炭素数1~30のものが挙げられ、好ましくは置換していてもよいアルキル基、シクロアルキル基、アリール基、又はこれらの複数が、単結合、-O-、-CO-、-S-、-SO-、-SON(Rd)-などの連結基で連結された基を挙げることができる。
 Rdは、水素原子又はアルキル基を表す。
 Rc、Rc及びRcは、各々独立に、有機基を表す。
 Rc、Rc及びRcの有機基としては、Rcにおける好ましい有機基と同じものを挙げることができ、好ましくは、炭素数1~4のパーフロロアルキル基である。
 RcとRcが結合して環を形成していてもよい。
 RcとRcが結合して形成される基としてはアルキレン基、シクロアルキレン基、アリーレン基が挙げられる。好ましくは炭素数2~4のパーフロロアルキレン基である。
 Rc及びRc~Rcの有機基として、好ましくは1位がフッ素原子又はフロロアルキル基で置換されたアルキル基、フッ素原子又はフロロアルキル基で置換されたフェニル基である。フッ素原子又はフロロアルキル基を有することにより、光照射によって発生した酸の酸性度が上がり、感度が向上する。また、RcとRcが結合して環を形成することにより光照射によって発生した酸の酸性度が上がり、感度が向上し、好ましい。
In the above general formula,
Rc 1 represents an organic group.
Examples of the organic group in Rc 1 include those having 1 to 30 carbon atoms, and preferably an alkyl group, a cycloalkyl group, an aryl group, or a plurality of these which may be substituted is a single bond, —O—, — And groups linked by a linking group such as CO 2 —, —S—, —SO 3 —, —SO 2 N (Rd 1 ) —.
Rd 1 represents a hydrogen atom or an alkyl group.
Rc 3 , Rc 4 and Rc 5 each independently represents an organic group.
Examples of the organic group for Rc 3 , Rc 4 and Rc 5 include the same organic groups as those for Rc 1 , preferably a perfluoroalkyl group having 1 to 4 carbon atoms.
Rc 3 and Rc 4 may be bonded to form a ring.
Examples of the group formed by combining Rc 3 and Rc 4 include an alkylene group, a cycloalkylene group, and an arylene group. A perfluoroalkylene group having 2 to 4 carbon atoms is preferred.
The organic group of Rc 1 and Rc 3 to Rc 5 is preferably an alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group, or a phenyl group substituted with a fluorine atom or a fluoroalkyl group. By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by light irradiation is increased and the sensitivity is improved. Further, Rc 3 and Rc 4 are combined to form a ring, so that the acidity of the acid generated by light irradiation is increased, and the sensitivity is improved, which is preferable.
 一般式(ZI)に於いて、
 R201、R202及びR203としての有機基の炭素数は、一般的に1~30、好ましくは1~20である。R201~R203についての有機基としては、アリール基、アルキル基、シクロアルキル基などが挙げられる。
 また、R201~R203のうち2つが結合して環構造を形成してもよく、環内に酸素原子、硫黄原子、エステル結合、アミド結合、カルボニル基を含んでいてもよい。R201~R203の内の2つが結合して形成する基としては、アルキレン基(例えば、ブチレン基、ペンチレン基)を挙げることができる。
 前記一般式(ZII)、(ZIII)において、R204~R207のアリール基としてはフェニル基、ナフチル基が好ましく、更に好ましくはフェニル基である。R204~R207のアリール基は、酸素原子、窒素原子、硫黄原子等を有する複素環構造を有するアリール基であってもよい。複素環構造を有するアリール基の骨格としては、例えば、ピロール、フラン、チオフェン、インドール、ベンゾフラン、ベンゾチオフェン等を挙げることができる。 
 R204~R207におけるアルキル基及びシクロアルキル基としては、好ましくは、炭素数1~10の直鎖又は分岐アルキル基(例えば、メチル基、エチル基、プロピル基、ブチル基、ペンチル基)、炭素数3~10のシクロアルキル基(シクロペンチル基、シクロヘキシル基、ノルボニル基)を挙げることができる。
 R204~R207のアリール基、アルキル基、シクロアルキル基は、置換基を有していてもよい。R204~R207のアリール基、アルキル基、シクロアルキル基が有していてもよい置換基としては、例えば、アルキル基(例えば炭素数1~15)、シクロアルキル基(例えば炭素数3~15)、アリール基(例えば炭素数6~15)、アルコキシ基
(例えば炭素数1~15)、ハロゲン原子、水酸基、フェニルチオ基等を挙げることができる。
In general formula (ZI),
The organic group as R 201 , R 202 and R 203 generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms. Examples of the organic group for R 201 to R 203 include an aryl group, an alkyl group, and a cycloalkyl group.
Two of R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. Examples of the group formed by combining two of R 201 to R 203 include an alkylene group (eg, butylene group, pentylene group).
In the general formulas (ZII) and (ZIII), the aryl group of R 204 to R 207 is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group of R 204 to R 207 may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the skeleton of the aryl group having a heterocyclic structure include pyrrole, furan, thiophene, indole, benzofuran, benzothiophene, and the like.
The alkyl group and cycloalkyl group in R 204 to R 207 are preferably a linear or branched alkyl group having 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups having a number of 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group).
The aryl group, alkyl group, and cycloalkyl group of R 204 to R 207 may have a substituent. Examples of the substituent that the aryl group, alkyl group, and cycloalkyl group represented by R 204 to R 207 may have include an alkyl group (eg, having 1 to 15 carbon atoms) and a cycloalkyl group (eg, having 3 to 15 carbon atoms). ), Aryl groups (for example, having 6 to 15 carbon atoms), alkoxy groups (for example, having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, phenylthio groups, and the like.
<トリアリールスルフォニウム塩>
 トリアリールスルホニウム塩は熱安定性、感度の面で特に好ましく、更に増感剤を併用することが好ましい。
 このような化合物は必要に応じて2種類以上併用して使用することができる。
<Triarylsulfonium salt>
Triarylsulfonium salts are particularly preferable in terms of thermal stability and sensitivity, and it is preferable to use a sensitizer in combination.
Two or more kinds of such compounds can be used in combination as required.
 トリアリールスルフォニウム塩は、少なくとも一つのアリール基が電子求引性基を置換基として有することが好ましく、更に、アリール骨格に結合する置換基のハメット値の総和が0.18より大きいことが好ましい。 In the triarylsulfonium salt, it is preferable that at least one aryl group has an electron withdrawing group as a substituent, and the total Hammett value of the substituents bonded to the aryl skeleton is preferably larger than 0.18. .
 ここで、電子求引性基とは、ハメット値(Hammet置換基定数σ)が0より大きい置換基を意味する。本発明においては、高感度化の観点から、特定光酸発生剤中のアリール骨格に結合する置換基のハメット値の総和が0.18以上であることが好ましく、0.46より大きいことがより好ましく、0.60より大きいことが更に好ましい。
 また、ハメット値は、トリアリールスルホニウム塩構造を有するカチオンの電子求引性の程度を表すものであり、高感度化の観点からは特に上限値はないが、反応性と安定性との観点からは、0.46を超え4.0未満であることが好ましく、より好ましくは0.50を超え、3.5未満であり、特に好ましくは0.60を超え3.0未満の範囲である。
Here, the electron withdrawing group means a substituent having a Hammett value (Hammet substituent constant σ) larger than 0. In the present invention, from the viewpoint of increasing sensitivity, the sum of Hammett values of substituents bonded to the aryl skeleton in the specific photoacid generator is preferably 0.18 or more, more preferably greater than 0.46. Preferably, it is more preferably larger than 0.60.
The Hammett value represents the degree of electron withdrawing property of a cation having a triarylsulfonium salt structure, and there is no particular upper limit from the viewpoint of increasing sensitivity, but from the viewpoint of reactivity and stability. Is preferably more than 0.46 and less than 4.0, more preferably more than 0.50 and less than 3.5, and particularly preferably more than 0.60 and less than 3.0.
 なお、本発明におけるハメット値は、稲本直樹 編、化学セミナー10 ハメット則-構造と反応性-(1983年、丸善(株)発行)に記載の数値を用いている。
 アリール骨格に導入する電子求引性基としては、トリフルオロメチル基、ハロゲン原子、エステル基、スルホキシド基、シアノ基、アミド基、カルボキシル基、カルボニル基等が挙げられる。これらの置換基のハメット値を以下に示す。トリフルオロメチル基(-CF、m:0.43、p:0.54)、ハロゲン原子〔例えば、-F(m:0.34、p:0.06)、-Cl(m:0.37、p:0.23)、-Br(m:0.39、p:0.23)、-I(m:0.35、p:0.18)〕、エステル基(例えば、-COCH、o:0.37、p:0.45)、スルホキシド基(例えば、-SOCH、m:0.52、p:0.45)、シアノ基(-CN、m:0.56、p:0.66)、アミド基(例えば、-NHCOCH、m:0.21、p:0.00)、カルボキシ基(-COOH、m:0.37、p:0.45)、カルボニル基(-CHO、m:0.36、p:(043))等が挙げられる。かっこ内は、その置換基のアリール骨格における導入位置と、そのハメット値を表し、(m:0.50)とは、当該置換基がメタ位に導入された時のハメット値が0.50であることを示す。
The Hammett value in the present invention uses the numerical values described in Naoki Inamoto, Chemistry Seminar 10 Hammett's Law-Structure and Reactivity (published by Maruzen Co., Ltd. in 1983).
Examples of the electron withdrawing group introduced into the aryl skeleton include a trifluoromethyl group, a halogen atom, an ester group, a sulfoxide group, a cyano group, an amide group, a carboxyl group, and a carbonyl group. The Hammett values of these substituents are shown below. A trifluoromethyl group (—CF 3 , m: 0.43, p: 0.54), a halogen atom [for example, —F (m: 0.34, p: 0.06), —Cl (m: 0. 37, p: 0.23), -Br (m: 0.39, p: 0.23), -I (m: 0.35, p: 0.18)], an ester group (for example, -COCH 3 , O: 0.37, p: 0.45), sulfoxide group (for example, —SOCH 3 , m: 0.52, p: 0.45), cyano group (—CN, m: 0.56, p: 0.66), an amide group (for example, —NHCOCH 3 , m: 0.21, p: 0.00), a carboxy group (—COOH, m: 0.37, p: 0.45), a carbonyl group (— CHO, m: 0.36, p: (043)) and the like. The parenthesis represents the introduction position of the substituent in the aryl skeleton and the Hammett value, and (m: 0.50) is the Hammett value of 0.50 when the substituent is introduced at the meta position. Indicates that there is.
 これらの置換基のなかでも、疎水性の観点から、ハロゲン原子、ハロゲン化アルキル基等の非イオン性の置換基が好ましく、なかでも、反応性の観点から-Clが好ましく、疎水性を与えるという観点からは、-F、-CF、-Cl、-Brが好ましい。 Among these substituents, nonionic substituents such as a halogen atom and a halogenated alkyl group are preferable from the viewpoint of hydrophobicity. Among them, —Cl is preferable from the viewpoint of reactivity, and imparts hydrophobicity. From the viewpoint, —F, —CF 3 , —Cl, and —Br are preferable.
 これらの置換基は、トリアリールスルホニウム塩構造の3つのアリール骨格のいずれか一つに導入されていてもよく、2以上のアリール骨格に導入されていてもよい。また、3つのアリール骨格のそれぞれに導入される置換基は、1つでも複数でもよい。本発明においては、これらのアリール骨格に導入された置換基のハメット値の総和が0.18を超えるものが好ましく、0.46を越えるものがより好ましい。導入される置換基の数は、任意である。例えば、トリアリールスルホニウム塩構造のアリール骨格のうち1ヶ所に特にハメット値の大きい(例えば、ハメット値が単独で0.46を超える)置換基を1つだけ導入していてもよい。また、例えば、複数の置換基が導入されそれぞれのハメット値の合計が0.46を超えるものを導入してもよい。 These substituents may be introduced into any one of the three aryl skeletons of the triarylsulfonium salt structure, or may be introduced into two or more aryl skeletons. Moreover, the substituent introduced into each of the three aryl skeletons may be one or plural. In the present invention, the sum of Hammett values of substituents introduced into these aryl skeletons is preferably more than 0.18, more preferably more than 0.46. The number of substituents to be introduced is arbitrary. For example, only one substituent having a particularly large Hammett value (for example, a Hammett value exceeding 0.46 alone) may be introduced into one position of an aryl skeleton having a triarylsulfonium salt structure. Moreover, for example, a plurality of substituents introduced and the sum of the Hammett values exceeding 0.46 may be introduced.
 上記のように、置換基のハメット値は導入される位置によって異なるため、本発明に係る特定光酸発生剤におけるハメット値の総和は、置換基の種類、導入位置、導入数により確定されることになる。
 なお、ハメット則は、通常、m位、p位で表されるが、本発明においては、電子求引性の指標として、o位での置換基効果はp位と同値として計算する。好ましい置換位置としては、合成上の観点からm位、p位が好ましく、p位が最も好ましい。
 本発明において好ましいのは、ハロゲン原子により3置換以上されているスルホニウム塩であり、最も好ましいのは、クロロ基により3置換されているスルホニウム塩であり、具体的には、3つのアリール骨格のそれぞれにハロゲン原子、最も好ましくは、-Clが導入されたトリアリールスルホニウム塩構造を有するものが好ましく、-Clがp位に置換されているものがより好ましい。
As described above, since the Hammett value of the substituent varies depending on the position where it is introduced, the sum of Hammett values in the specific photoacid generator according to the present invention is determined by the type of substituent, the position of introduction, and the number of introductions. become.
The Hammett's rule is usually expressed in the m-position and p-position, but in the present invention, the substituent effect at the o-position is calculated as the same value as the p-position as an index of electron withdrawing property. Preferred substitution positions are preferably m-position and p-position, and most preferably p-position from the viewpoint of synthesis.
Preferred in the present invention is a sulfonium salt that is tri- or more substituted with a halogen atom, and most preferred is a sulfonium salt that is tri-substituted with a chloro group, specifically, each of the three aryl skeletons. And preferably have a triarylsulfonium salt structure in which —Cl is introduced, and more preferably —Cl is substituted at the p-position.
 本発明の組成物が含有するトリアリールスルフォニウム塩が有するスルフォン酸アニオンとしては、例えば、アリールスルフォン酸アニオン、アルカンスルフォン酸アニオンなどが挙げられ、フッ素原子又はフッ素原子を有する有機基で置換されているアニオンが好ましい。 Examples of the sulfonate anion possessed by the triarylsulfonium salt contained in the composition of the present invention include an aryl sulfonate anion, an alkane sulfonate anion, and the like, which are substituted with a fluorine atom or an organic group having a fluorine atom. An anion is preferred.
 トリアリールスルホニウム塩構造を有する化合物は、例えば、J.Am.Chem.Soc.第112巻(16)、1990年;pp.6004-6015、J.Org.Chem.1988年;pp.5571-5573、WO02/081439A1パンフレット、或いは欧州特許(EP)第1113005号明細書等に記載の方法により容易に合成することが可能である。 Examples of the compound having a triarylsulfonium salt structure are J.P. Am. Chem. Soc. 112 (16), 1990; 6004-6015, J.A. Org. Chem. 1988; It can be easily synthesized by the methods described in 5571-5573, WO02 / 081439A1 pamphlet, or European Patent (EP) No. 1113005.
 以下に具体例を挙げるが、これらに限定されるものではない。 Specific examples are given below, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000036
Figure JPOXMLDOC01-appb-C000036
Figure JPOXMLDOC01-appb-C000037
Figure JPOXMLDOC01-appb-C000037
 更に、トリフェニルスルホニウムトリフルオロメタンスルホナート、トリフェニルスルホニウムトリフルオロアセテート、4-メトキシフェニルジフェニルスルホニウムトリフルオロメタンスルホナート、4-メトキシフェニルジフェニルスルホニウムトリフルオロアセテート、4-フェニルチオフェニルジフェニルスルホニウムトリフルオロメタンスルホナート又は4-フェニルチオフェニルジフェニルスルホニウムトリフルオロアセテート等が挙げられる。 Further, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoroacetate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, 4-methoxyphenyldiphenylsulfonium trifluoroacetate, 4-phenylthiophenyldiphenylsulfonium trifluoromethanesulfonate or 4-phenylthiophenyl diphenylsulfonium trifluoroacetate and the like.
 ジアリールヨードニウム塩類としては、ジフェニルヨードニウムトリフルオロアセテート、ジフェニルヨードニウムトリフルオロメタンスルホナート、4-メトキシフェニルフェニルヨードニウムトリフルオロメタンスルホナート、4-メトキシフェニルフェニルヨードニウムトリフルオロアセテート、フェニル,4-(2’-ヒドロキシ-1’-テトラデカオキシ)フェニルヨードニウムトリフルオロメタンスルホナート、4-(2’-ヒドロキシ-1’-テトラデカオキシ)フェニルヨードニウムヘキサフルオロアンチモナート、フェニル,4-(2’-ヒドロキシ-1’-テトラデカオキシ)フェニルヨードニウム-p-トルエンスルホナート等;ジアゾメタン誘導体として、ビス(シクロヘキシルスルホニル)ジアゾメタン、ビス(t-ブチルスルホニル)ジアゾメタン、ビス(p-トルエンスルホニル)ジアゾメタン等;
 イミドスルホネート誘導体として、トリフルオロメチルスルホニルオキシビシクロ[2.2.1]ヘプト-5-エンジカルボキシイミド、スクシンイミドトリフルオロメチルスルホネート、フタルイミドp-トルエンスルホネート、フタルイミドトリフルオロメチルスルホネート、N-ヒドロキシナフタルイミドメタンスルホネート、N-ヒドロキシ-5-ノルボルネン-2,3-ジカルボキシイミドプロパンスルホネート等が挙げられる。
Examples of the diaryliodonium salts include diphenyliodonium trifluoroacetate, diphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium trifluoroacetate, phenyl, 4- (2′-hydroxy- 1'-tetradecaoxy) phenyliodonium trifluoromethanesulfonate, 4- (2'-hydroxy-1'-tetradecoxy) phenyliodonium hexafluoroantimonate, phenyl, 4- (2'-hydroxy-1'-tetra Decaoxy) phenyliodonium-p-toluenesulfonate, etc .; diazomethane derivatives such as bis (cyclohexylsulfonyl) diazomethane, bis (t-butyl) Sulfonyl) diazomethane, bis (p- toluenesulfonyl) diazomethane;
Examples of imide sulfonate derivatives include trifluoromethylsulfonyloxybicyclo [2.2.1] hept-5-enedicarboximide, succinimide trifluoromethyl sulfonate, phthalimide p-toluene sulfonate, phthalimide trifluoromethyl sulfonate, and N-hydroxynaphthalimide methane. Examples thereof include sulfonate, N-hydroxy-5-norbornene-2,3-dicarboximidopropane sulfonate, and the like.
 また、活性光線又は放射線の照射により酸を発生する化合物の中で、感度、解像性、誘電率、寸法安定性などの観点で、最も好ましいものの例としてオキシム化合物、より好ましくはオキシムスルホネート化合物を挙げることができる。 Among compounds that generate an acid upon irradiation with actinic rays or radiation, oxime compounds, more preferably oxime sulfonate compounds, are the most preferable examples from the viewpoint of sensitivity, resolution, dielectric constant, dimensional stability, and the like. Can be mentioned.
 オキシムスルホネート化合物、すなわち、オキシムスルホネート残基を有する化合物としては、式(b1)で表されるオキシムスルホネート残基を含有する化合物が好ましく例示できる。 Preferred examples of the oxime sulfonate compound, that is, the compound having an oxime sulfonate residue include compounds containing an oxime sulfonate residue represented by the formula (b1).
Figure JPOXMLDOC01-appb-C000038
Figure JPOXMLDOC01-appb-C000038
(式(b1)中、Rは、アルキル基又はアリール基を表す。)
 いずれの基も置換されてもよく、Rにおけるアルキル基は直鎖状でも分岐状でも環状でもよい。許容される置換基は以下に説明する。
 Rのアルキル基としては、炭素数1~10の、直鎖状又は分岐状アルキル基が好ましい。Rのアルキル基は、炭素数6~11のアリール基、炭素数1~10のアルコキシ基、又は、シクロアルキル基(7,7-ジメチル-2-オキソノルボルニル基などの有橋式脂環基を含む、好ましくはビシクロアルキル基等)で置換されてもよい。
 Rのアリール基としては、炭素数6~11のアリール基が好ましく、フェニル基又はナフチル基がより好ましい。Rのアリール基は、低級アルキル基、アルコキシ基あるいはハロゲン原子で置換されてもよい。
(In formula (b1), R 5 represents an alkyl group or an aryl group.)
Any group may be substituted, and the alkyl group in R 5 may be linear, branched or cyclic. Acceptable substituents are described below.
The alkyl group for R 5 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group represented by R 5 is an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (7,7-dimethyl-2-oxonorbornyl group or the like). It may be substituted with a cyclic group, preferably a bicycloalkyl group or the like.
The aryl group for R 5 is preferably an aryl group having 6 to 11 carbon atoms, more preferably a phenyl group or a naphthyl group. The aryl group for R 5 may be substituted with a lower alkyl group, an alkoxy group or a halogen atom.
 前記式(b1)で表されるオキシムスルホネート残基を含有する化合物としては、式(OS-3)、式(OS-4)又は式(OS-5)で表されるオキシムスルホネート化合物であることが特に好ましい。 The compound containing the oxime sulfonate residue represented by the formula (b1) is an oxime sulfonate compound represented by the formula (OS-3), the formula (OS-4) or the formula (OS-5). Is particularly preferred.
Figure JPOXMLDOC01-appb-C000039
Figure JPOXMLDOC01-appb-C000039
(式(OS-3)~式(OS-5)中、Rはアルキル基、アリール基又はヘテロアリール基を表し、Rはそれぞれ独立に、水素原子、アルキル基、アリール基又はハロゲン原子を表し、Rはそれぞれ独立に、ハロゲン原子、アルキル基、アルキルオキシ基、スルホン酸基、アミノスルホニル基又はアルコキシスルホニル基を表し、XはO又はSを表し、nは1又は2を表し、mは0~6の整数を表す。) (In the formulas (OS-3) to (OS-5), R 1 represents an alkyl group, an aryl group or a heteroaryl group, and each R 2 independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom. R 6 represents each independently a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group, X represents O or S, n represents 1 or 2, m Represents an integer of 0 to 6.)
 前記式(OS-3)~(OS-5)中、Rにおけるアルキル基、アリール基又はヘテロアリール基は、置換基を有していてもよい。
 前記式(OS-3)~(OS-5)中、Rにおけるアルキル基としては、置換基を有していてもよい総炭素数1~30のアルキル基であることが好ましい。
 Rにおけるアルキル基が有していてもよい置換基としては、ハロゲン原子、アルキルオキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、アルキルオキシカルボニル基、アリールオキシカルボニル基、アミノカルボニル基が挙げられる。
In the above formulas (OS-3) to (OS-5), the alkyl group, aryl group or heteroaryl group in R 1 may have a substituent.
In the formulas (OS-3) to (OS-5), the alkyl group for R 1 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
Examples of the substituent that the alkyl group in R 1 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. .
 Rにおけるアルキル基としては、メチル基、エチル基、n-プロピル基、i-プロピル基、n-ブチル基、s-ブチル基、t-ブチル基、n-ペンチル基、n-ヘキシル基、n-オクチル基、n-デシル基、n-ドデシル基、トリフルオロメチル基、パーフルオロプロピル基、パーフルオロヘキシル基、ベンジル基が挙げられる。 Examples of the alkyl group in R 1 include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n -Octyl group, n-decyl group, n-dodecyl group, trifluoromethyl group, perfluoropropyl group, perfluorohexyl group, benzyl group.
 また、前記式(OS-3)~(OS-5)中、Rにおけるアリール基としては、置換基を有してもよい総炭素数6~30のアリール基が好ましい。
 Rにおけるアリール基が有していてもよい置換基としては、ハロゲン原子、アルキル基、アルキルオキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、アルキルオキシカルボニル基、アリールオキシカルボニル基、アミノカルボニル基、スルホン酸基、アミノスルホニル基、アルコキシスルホニル基が挙げられる。
In the formulas (OS-3) to (OS-5), the aryl group for R 1 is preferably an aryl group having 6 to 30 carbon atoms which may have a substituent.
Examples of the substituent that the aryl group in R 1 may have include a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. , Sulfonic acid group, aminosulfonyl group, alkoxysulfonyl group.
 Rにおけるアリール基としては、フェニル基、p-メチルフェニル基、p-クロロフェニル基、ペンタクロロフェニル基、ペンタフルオロフェニル基、o-メトキシフェニル基、p-フェノキシフェニル基が挙げられる。 Examples of the aryl group in R 1 include a phenyl group, a p-methylphenyl group, a p-chlorophenyl group, a pentachlorophenyl group, a pentafluorophenyl group, an o-methoxyphenyl group, and a p-phenoxyphenyl group.
 また、前記式(OS-3)~(OS-5)中、Rにおけるヘテロアリール基としては、置換基を有してもよい総炭素数4~30のヘテロアリール基が好ましい。
 Rにおけるヘテロアリール基が有していてもよい置換基としては、ハロゲン原子、アルキル基、アルキルオキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、アルキルオキシカルボニル基、アリールオキシカルボニル基、アミノカルボニル基、スルホン酸基、アミノスルホニル基、アルコキシスルホニル基が挙げられる。
In the formulas (OS-3) to (OS-5), the heteroaryl group for R 1 is preferably a heteroaryl group having 4 to 30 carbon atoms which may have a substituent.
Examples of the substituent that the heteroaryl group in R 1 may have include a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl. Group, sulfonic acid group, aminosulfonyl group and alkoxysulfonyl group.
 前記式(OS-3)~(OS-5)中、Rにおけるヘテロアリール基は、少なくとも1つの環が複素芳香環であればよく、例えば、複素芳香環とベンゼン環とが縮環していてもよい。
 Rにおけるヘテロアリール基としては、置換基を有していてもよい、チオフェン環、ピロール環、チアゾール環、イミダゾール環、フラン環、ベンゾチオフェン環、ベンゾチアゾール環及びベンゾイミダゾール環よりなる群から選ばれた環から1つの水素原子を除いた基が挙げられる。
In the above formulas (OS-3) to (OS-5), at least one of the heteroaryl groups in R 1 may be a heteroaromatic ring. For example, a heteroaromatic ring and a benzene ring are condensed. May be.
The heteroaryl group for R 1 is selected from the group consisting of optionally substituted thiophene ring, pyrrole ring, thiazole ring, imidazole ring, furan ring, benzothiophene ring, benzothiazole ring and benzimidazole ring. And a group in which one hydrogen atom is removed from the ring.
 前記式(OS-3)~(OS-5)中、Rは、水素原子、アルキル基又はアリール基であることが好ましく、水素原子又はアルキル基であることがより好ましい。
 前記式(OS-3)~(OS-5)中、化合物中に2以上存在するRのうち、1つ又は2つがアルキル基、アリール基又はハロゲン原子であることが好ましく、1つがアルキル基、アリール基又はハロゲン原子であることがより好ましく、1つがアルキル基であり、かつ残りが水素原子であることが特に好ましい。
 前記式(OS-3)~(OS-5)中、Rにおけるアルキル基又はアリール基は、置換基を有していてもよい。Rにおけるアルキル基又はアリール基が有していてもよい置換基としては、前記Rにおけるアルキル基又はアリール基が有していてもよい置換基と同様の基が例示できる。
In the formulas (OS-3) to (OS-5), R 2 is preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom or an alkyl group.
In the formulas (OS-3) to (OS-5), it is preferred that one or two of R 2 present in the compound is an alkyl group, an aryl group or a halogen atom, and one is an alkyl group. More preferably an aryl group or a halogen atom, and particularly preferably one is an alkyl group and the rest is a hydrogen atom.
In the formulas (OS-3) to (OS-5), the alkyl group or aryl group in R 2 may have a substituent. Examples of the substituent that the alkyl group or aryl group in R 2 may have include the same groups as the substituent that the alkyl group or aryl group in R 1 may have.
 Rにおけるアルキル基としては、置換基を有してもよい総炭素数1~12のアルキル基であることが好ましく、置換基を有してもよい総炭素数1~6のアルキル基であることがより好ましい。
 Rにおけるアルキル基としては、メチル基、エチル基、n-プロピル基、i-プロピル基、n-ブチル基、i-ブチル基、s-ブチル基、n-ヘキシル基、アリル基、クロロメチル基、ブロモメチル基、メトキシメチル基、ベンジル基が好ましく、メチル基、エチル基、n-プロピル基、i-プロピル基、n-ブチル基、i-ブチル基、s-ブチル基、n-ヘキシル基が好ましく、メチル基、エチル基、n-プロピル基、n-ブチル基、n-ヘキシル基が更に好ましく、メチル基が好ましい。
The alkyl group for R 2 is preferably an alkyl group having 1 to 12 carbon atoms which may have a substituent, and is an alkyl group having 1 to 6 carbon atoms which may have a substituent. It is more preferable.
Examples of the alkyl group for R 2 include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, n-hexyl group, allyl group, and chloromethyl group. , A bromomethyl group, a methoxymethyl group, and a benzyl group are preferable, and a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, and an n-hexyl group are preferable. A methyl group, an ethyl group, an n-propyl group, an n-butyl group, and an n-hexyl group are more preferable, and a methyl group is preferable.
 Rにおけるアリール基としては、置換基を有してもよい総炭素数6~30のアリール基であることが好ましい。
 Rにおけるアリール基として具体的には、フェニル基、p-メチルフェニル基、o-クロロフェニル基、p-クロロフェニル基、o-メトキシフェニル基、p-フェノキシフェニル基が好ましい。
 Rにおけるハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子が挙げられる。
 これらの中でも、塩素原子、臭素原子が好ましい。
The aryl group for R 2 is preferably an aryl group having 6 to 30 carbon atoms which may have a substituent.
Specifically, the aryl group in R 2 is preferably a phenyl group, a p-methylphenyl group, an o-chlorophenyl group, a p-chlorophenyl group, an o-methoxyphenyl group, or a p-phenoxyphenyl group.
Examples of the halogen atom for R 2 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
Among these, a chlorine atom and a bromine atom are preferable.
 前記式(OS-3)~(OS-5)中、XはO又はSを表し、Oであることが好ましい。
 式(OS-3)~(OS-5)において、Xを環員として含む環は、5員環又は6員環である。
 前記式(OS-3)~(OS-5)中、nは1又は2を表し、XがOである場合、nは1であることが好ましく、また、XがSである場合、nは2であることが好ましい。
In the formulas (OS-3) to (OS-5), X represents O or S, and is preferably O.
In formulas (OS-3) to (OS-5), the ring containing X as a ring member is a 5-membered ring or a 6-membered ring.
In the formulas (OS-3) to (OS-5), n represents 1 or 2, and when X is O, n is preferably 1, and when X is S, n is 2 is preferable.
 前記式(OS-3)~(OS-5)中、Rにおけるアルキル基及びアルキルオキシ基は、置換基を有していてもよい。
 前記式(OS-3)~(OS-5)中、Rにおけるアルキル基としては、置換基を有していてもよい総炭素数1~30のアルキル基であることが好ましい。
 Rにおけるアルキル基が有していてもよい置換基としては、ハロゲン原子、アルキルオキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、アルキルオキシカルボニル基、アリールオキシカルボニル基、アミノカルボニル基が挙げられる。
In the formulas (OS-3) to (OS-5), the alkyl group and alkyloxy group in R 6 may have a substituent.
In the formulas (OS-3) to (OS-5), the alkyl group for R 6 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
Examples of the substituent that the alkyl group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. .
 Rにおけるアルキル基としては、メチル基、エチル基、n-プロピル基、i-プロピル基、n-ブチル基、s-ブチル基、t-ブチル基、n-ペンチル基、n-ヘキシル基、n-オクチル基、n-デシル基、n-ドデシル基、トリフルオロメチル基、パーフルオロプロピル基、パーフルオロヘキシル基、ベンジル基が好ましい。 Examples of the alkyl group for R 6 include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n -Octyl, n-decyl, n-dodecyl, trifluoromethyl, perfluoropropyl, perfluorohexyl and benzyl are preferred.
 前記式(OS-3)~(OS-5)中、Rにおけるアルキルオキシ基としては、置換基を有してもよい総炭素数1~30のアルキルオキシ基であることが好ましい。
 Rにおけるアルキルオキシ基が有していてもよい置換基としては、ハロゲン原子、アルキルオキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、アルキルオキシカルボニル基、アリールオキシカルボニル基、アミノカルボニル基が挙げられる。
In the above formulas (OS-3) to (OS-5), the alkyloxy group for R 6 is preferably an alkyloxy group having 1 to 30 carbon atoms which may have a substituent.
Examples of the substituent that the alkyloxy group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group. It is done.
 Rにおけるアルキルオキシ基としては、メチルオキシ基、エチルオキシ基、ブチルオキシ基、ヘキシルオキシ基、フェノキシエチルオキシ基、トリクロロメチルオキシ基、又は、エトキシエチルオキシ基が好ましい。
 前記式(OS-3)~(OS-5)中、Rにおけるアミノスルホニル基としては、メチルアミノスルホニル基、ジメチルアミノスルホニル基、フェニルアミノスルホニル基、メチルフェニルアミノスルホニル基、アミノスルホニル基が挙げられる。
 前記式(OS-3)~(OS-5)中、Rにおけるアルコキシスルホニル基としては、メトキシスルホニル基、エトキシスルホニル基、プロピルオキシスルホニル基、ブチルオキシスルホニル基が挙げられる。
As the alkyloxy group in R 6 , a methyloxy group, an ethyloxy group, a butyloxy group, a hexyloxy group, a phenoxyethyloxy group, a trichloromethyloxy group, or an ethoxyethyloxy group is preferable.
In the above formulas (OS-3) to (OS-5), examples of the aminosulfonyl group for R 6 include a methylaminosulfonyl group, a dimethylaminosulfonyl group, a phenylaminosulfonyl group, a methylphenylaminosulfonyl group, and an aminosulfonyl group. It is done.
In the formulas (OS-3) to (OS-5), examples of the alkoxysulfonyl group for R 6 include a methoxysulfonyl group, an ethoxysulfonyl group, a propyloxysulfonyl group, and a butyloxysulfonyl group.
 また、前記式(OS-3)~(OS-5)中、mは0~6の整数を表し、0~2の整数であることが好ましく、0又は1であることがより好ましく、0であることが特に好ましい。 In the formulas (OS-3) to (OS-5), m represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, and 0. It is particularly preferred.
 また、前記式(b1)で表されるオキシムスルホネート残基を含有する化合物は、下記式(OS-6)~(OS-11)のいずれかで表されるオキシムスルホネート化合物であることが特に好ましい。 The compound containing an oxime sulfonate residue represented by the formula (b1) is particularly preferably an oxime sulfonate compound represented by any one of the following formulas (OS-6) to (OS-11). .
Figure JPOXMLDOC01-appb-C000040
Figure JPOXMLDOC01-appb-C000040
(式(OS-6)~(OS-11)中、Rはアルキル基、アリール基又はヘテロアリール基を表し、Rは、水素原子又は臭素原子を表し、Rは水素原子、炭素数1~8のアルキル基、ハロゲン原子、クロロメチル基、ブロモメチル基、ブロモエチル基、メトキシメチル基、フェニル基又はクロロフェニル基を表し、Rは水素原子、ハロゲン原子、メチル基又はメトキシ基を表し、R10は水素原子又はメチル基を表す。) (In the formulas (OS-6) to (OS-11), R 1 represents an alkyl group, an aryl group, or a heteroaryl group, R 7 represents a hydrogen atom or a bromine atom, R 8 represents a hydrogen atom, Represents an alkyl group of 1 to 8, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl group; R 9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group; 10 represents a hydrogen atom or a methyl group.)
 式(OS-6)~(OS-11)におけるRは、前記式(OS-3)~(OS-5)におけるRと同義であり、好ましい態様も同様である。
 式(OS-6)におけるRは、水素原子又は臭素原子を表し、水素原子であることが好ましい。
 式(OS-6)~(OS-11)におけるRは、水素原子、炭素数1~8のアルキル基、ハロゲン原子、クロロメチル基、ブロモメチル基、ブロモエチル基、メトキシメチル基、フェニル基又はクロロフェニル基を表し、炭素数1~8のアルキル基、ハロゲン原子又はフェニル基であることが好ましく、炭素数1~8のアルキル基であることがより好ましく、炭素数1~6のアルキル基であることが更に好ましく、メチル基であることが特に好ましい。式(OS-8)及び式(OS-9)におけるRは、水素原子、ハロゲン原子、メチル基又はメトキシ基を表し、水素原子であることが好ましい。
 式(OS-8)~(OS-11)におけるR10は、水素原子又はメチル基を表し、水素原子であることが好ましい。
 また、前記オキシムスルホネート化合物において、オキシムの立体構造(E,Z)については、どちらか一方であっても、混合物であってもよい。
R 1 in the formulas (OS-6) to (OS-11) has the same meaning as R 1 in the formulas (OS-3) to (OS-5), and preferred embodiments thereof are also the same.
R 7 in formula (OS-6) represents a hydrogen atom or a bromine atom, and is preferably a hydrogen atom.
R 8 in the formulas (OS-6) to (OS-11) is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl Represents an alkyl group having 1 to 8 carbon atoms, a halogen atom or a phenyl group, more preferably an alkyl group having 1 to 8 carbon atoms, and an alkyl group having 1 to 6 carbon atoms. Is more preferable, and a methyl group is particularly preferable. R 9 in formula (OS-8) and formula (OS-9) represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and is preferably a hydrogen atom.
R 10 in the formulas (OS-8) to (OS-11) represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
In the oxime sulfonate compound, the oxime steric structure (E, Z) may be either one or a mixture.
 前記式(OS-3)~式(OS-5)で表されるオキシムスルホネート化合物の具体例としては、下記例示化合物が挙げられるが、本発明は、これらに限定されるものではない。 Specific examples of the oxime sulfonate compounds represented by the above formulas (OS-3) to (OS-5) include the following exemplified compounds, but the present invention is not limited thereto.
Figure JPOXMLDOC01-appb-C000041
Figure JPOXMLDOC01-appb-C000041
Figure JPOXMLDOC01-appb-C000042
Figure JPOXMLDOC01-appb-C000042
Figure JPOXMLDOC01-appb-C000043
Figure JPOXMLDOC01-appb-C000043
Figure JPOXMLDOC01-appb-C000044
Figure JPOXMLDOC01-appb-C000044
Figure JPOXMLDOC01-appb-C000045
Figure JPOXMLDOC01-appb-C000045
Figure JPOXMLDOC01-appb-C000046
Figure JPOXMLDOC01-appb-C000046
Figure JPOXMLDOC01-appb-C000047
Figure JPOXMLDOC01-appb-C000047
 式(b1)で表されるオキシムスルホネート残基を含有する上記化合物としては、式(OS-1)で表される化合物であることも好ましい。 The compound containing an oxime sulfonate residue represented by the formula (b1) is also preferably a compound represented by the formula (OS-1).
Figure JPOXMLDOC01-appb-C000048
Figure JPOXMLDOC01-appb-C000048
 上記一般式(OS-1)中、Rは、水素原子、アルキル基、アルケニル基、アルコキシ基、アルコキシカルボニル基、アシル基、カルバモイル基、スルファモイル基、スルホ基、シアノ基、アリール基又はヘテロアリール基を表す。Rは、アルキル基又はアリール基を表す。 In the general formula (OS-1), R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or a heteroaryl. Represents a group. R 2 represents an alkyl group or an aryl group.
 Xは-O-、-S-、-NH-、-NR-、-CH-、-CRH-又は-CR-を表し、R~Rはアルキル基又はアリール基を表す。
 R21~R24は、それぞれ独立に、水素原子、ハロゲン原子、アルキル基、アルケニル基、アルコキシ基、アミノ基、アルコキシカルボニル基、アルキルカルボニル基、アリールカルボニル基、アミド基、スルホ基、シアノ基又はアリール基を表す。R21~R24のうち2つは、それぞれ互いに結合して環を形成してもよい。
 R21~R24としては、水素原子、ハロゲン原子及びアルキル基が好ましく、また、R21~R24のうち少なくとも2つが互いに結合してアリール基を形成する態様もまた、好ましく挙げられる。中でも、R21~R24がいずれも水素原子である態様が感度の観点から好ましい。
 既述の官能基は、いずれも、更に置換基を有していてもよい。
X is -O -, - S -, - NH -, - NR 5 -, - CH 2 -, - CR 6 H- or -CR 6 R 7 - represents, R 5 ~ R 7 is an alkyl group or an aryl group Represents.
R 21 to R 24 are each independently a hydrogen atom, halogen atom, alkyl group, alkenyl group, alkoxy group, amino group, alkoxycarbonyl group, alkylcarbonyl group, arylcarbonyl group, amide group, sulfo group, cyano group or Represents an aryl group. Two of R 21 to R 24 may be bonded to each other to form a ring.
As R 21 to R 24 , a hydrogen atom, a halogen atom and an alkyl group are preferable, and an embodiment in which at least two of R 21 to R 24 are bonded to each other to form an aryl group is also preferable. Among these, an embodiment in which R 21 to R 24 are all hydrogen atoms is preferable from the viewpoint of sensitivity.
Any of the aforementioned functional groups may further have a substituent.
 前記式(OS-1)で表される化合物は、下記式(OS-2)で表される化合物であることがより好ましい。 The compound represented by the formula (OS-1) is more preferably a compound represented by the following formula (OS-2).
Figure JPOXMLDOC01-appb-C000049
Figure JPOXMLDOC01-appb-C000049
 前記式(OS-2)中、R、R、R21~R24は、それぞれ式(OS-1)におけるのと同義であり、好ましい例もまた同様である。
 これらの中でも、式(OS-1)及び式(OS-2)におけるRがシアノ基又はアリール基である態様がより好ましく、式(OS-2)で表され、Rがシアノ基、フェニル基又はナフチル基である態様が最も好ましい。
In the formula (OS-2), R 1 , R 2 and R 21 to R 24 have the same meanings as in the formula (OS-1), and preferred examples thereof are also the same.
Among these, an embodiment in which R 1 in the formula (OS-1) and the formula (OS-2) is a cyano group or an aryl group is more preferable, represented by the formula (OS-2), in which R 1 is a cyano group, phenyl The embodiment which is a group or a naphthyl group is most preferred.
 また、前記オキシムスルホネート化合物において、オキシムやベンゾチアゾール環の立体構造(E,Z等)についてはそれぞれ、どちらか一方であっても、混合物であってもよい。 In the oxime sulfonate compound, the steric structure (E, Z, etc.) of the oxime or benzothiazole ring may be either one or a mixture.
 以下に、本発明に好適に用いうる式(OS-1)で表される化合物の具体例(例示化合物b-1~b-34)を示すが、本発明はこれに限定されない。なお、Meはメチル基を表し、Etはエチル基を表し、Bnはベンジル基を表し、Phはフェニル基を表す。 Specific examples (exemplary compounds b-1 to b-34) of the compound represented by the formula (OS-1) that can be suitably used in the present invention are shown below, but the present invention is not limited thereto. Me represents a methyl group, Et represents an ethyl group, Bn represents a benzyl group, and Ph represents a phenyl group.
Figure JPOXMLDOC01-appb-C000050
Figure JPOXMLDOC01-appb-C000050
Figure JPOXMLDOC01-appb-C000051
Figure JPOXMLDOC01-appb-C000051
Figure JPOXMLDOC01-appb-C000052
Figure JPOXMLDOC01-appb-C000052
Figure JPOXMLDOC01-appb-C000053
Figure JPOXMLDOC01-appb-C000053
 上記化合物の中でも、感度と安定性との両立の観点から、b-9、b-16、b-31、b-33が好ましい。 Among the above compounds, b-9, b-16, b-31, and b-33 are preferable from the viewpoint of achieving both sensitivity and stability.
 式(b1)で表されるオキシムスルホネート残基を含有する上記化合物は、下記式(b2)で表されるオキシムスルホネート化合物であってもよい。 The above compound containing an oxime sulfonate residue represented by the formula (b1) may be an oxime sulfonate compound represented by the following formula (b2).
Figure JPOXMLDOC01-appb-C000054
Figure JPOXMLDOC01-appb-C000054
(式(b2)中、Rは、アルキル基又はアリール基を表し、Xは、アルキル基、アルコキシ基又はハロゲン原子を表し、mは、0~3の整数を表し、mが2又は3であるとき、複数のXは同一でも異なっていてもよい。) (In the formula (b2), R 5 represents an alkyl group or an aryl group, X represents an alkyl group, an alkoxy group, or a halogen atom, m represents an integer of 0 to 3, and m is 2 or 3. In some cases, multiple Xs may be the same or different.)
 Xとしてのアルキル基は、炭素数1~4の直鎖状又は分岐状アルキル基が好ましい。
 Xとしてのアルコキシ基は、炭素数1~4の直鎖状又は分岐状アルコキシ基が好ましい。
 Xとしてのハロゲン原子は、塩素原子又はフッ素原子が好ましい。
 mは、0又は1が好ましい。
 式(b2)中、mが1であり、Xがメチル基であり、Xの置換位置がオルト位であり、Rが炭素数1~10の直鎖状アルキル基、7,7-ジメチル-2-オキソノルボルニルメチル基、又はp-トルイル基である化合物が特に好ましい。
The alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
The alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
The halogen atom as X is preferably a chlorine atom or a fluorine atom.
m is preferably 0 or 1.
In the formula (b2), m is 1, X is a methyl group, the substitution position of X is the ortho position, R 5 is a linear alkyl group having 1 to 10 carbon atoms, 7,7-dimethyl- A compound that is a 2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
 式(b1)で表されるオキシムスルホネート残基を含有する化合物は、式(b3)で表されるオキシムスルホネート化合物であってもよい。 The compound containing an oxime sulfonate residue represented by the formula (b1) may be an oxime sulfonate compound represented by the formula (b3).
Figure JPOXMLDOC01-appb-C000055
Figure JPOXMLDOC01-appb-C000055
(式(b3)中、Rは式(b1)におけるRと同義であり、X’は、ハロゲン原子、水酸基、炭素数1~4のアルキル基、炭素数1~4のアルコキシ基、シアノ基又はニトロ基を表し、Lは0~5の整数を表す。) (In the formula (b3), R 5 has the same meaning as R 5 in the formula (b1), X 'is a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, alkoxy group having 1 to 4 carbon atoms, cyano Represents a group or a nitro group, and L represents an integer of 0 to 5.)
 式(b3)におけるRとしては、メチル基、エチル基、n-プロピル基、n-ブチル基、n-オクチル基、トリフルオロメチル基、ペンタフルオロエチル基、パーフルオロ-n-プロピル基、パーフルオロ-n-ブチル基、p-トリル基、4-クロロフェニル基又はペンタフルオロフェニル基が好ましく、n-オクチル基が特に好ましい。
 X’としては、炭素数1~5のアルコキシ基が好ましく、メトキシ基がより好ましい。
 Lとしては、0~2が好ましく、0~1が特に好ましい。
R 5 in the formula (b3) is methyl, ethyl, n-propyl, n-butyl, n-octyl, trifluoromethyl, pentafluoroethyl, perfluoro-n-propyl, perfluoro A fluoro-n-butyl group, p-tolyl group, 4-chlorophenyl group or pentafluorophenyl group is preferred, and an n-octyl group is particularly preferred.
X ′ is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
L is preferably from 0 to 2, particularly preferably from 0 to 1.
 式(b3)で表される化合物の具体例としては、α-(メチルスルホニルオキシイミノ)ベンジルシアニド、α-(エチルスルホニルオキシイミノ)ベンジルシアニド、α-(n-プロピルスルホニルオキシイミノ)ベンジルシアニド、α-(n-ブチルスルホニルオキシイミノ)ベンジルシアニド、α-(4-トルエンスルホニルオキシイミノ)ベンジルシアニド、α-〔(メチルスルホニルオキシイミノ)-4-メトキシフェニル〕アセトニトリル、α-〔(エチルスルホニルオキシイミノ)-4-メトキシフェニル〕アセトニトリル、α-〔(n-プロピルスルホニルオキシイミノ)-4-メトキシフェニル〕アセトニトリル、α-〔(n-ブチルスルホニルオキシイミノ)-4-メトキシフェニル〕アセトニトリル、α-〔(4-トルエンスルホニルオキシイミノ)-4-メトキシフェニル〕アセトニトリルを挙げることができる。 Specific examples of the compound represented by the formula (b3) include α- (methylsulfonyloxyimino) benzyl cyanide, α- (ethylsulfonyloxyimino) benzyl cyanide, α- (n-propylsulfonyloxyimino) benzyl. Cyanide, α- (n-butylsulfonyloxyimino) benzyl cyanide, α- (4-toluenesulfonyloxyimino) benzyl cyanide, α-[(methylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α- [(Ethylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(n-propylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(n-butylsulfonyloxyimino) -4-methoxyphenyl ] Acetonitrile, α-[(4-True Can be exemplified sulfonyl) -4-methoxyphenyl] acetonitrile.
 好ましいオキシムスルホネート化合物の具体例としては、下記化合物(i)~(viii)等が挙げられ、1種単独で使用したり、又は、2種類以上を併用することができる。化合物(i)~(viii)は、市販品として、入手することができる。また、他の種類の(C)感放射線酸発生剤と組み合わせて使用することもできる。 Specific examples of preferable oxime sulfonate compounds include the following compounds (i) to (viii), and the like can be used singly or in combination of two or more. Compounds (i) to (viii) can be obtained as commercial products. It can also be used in combination with other types of (C) radiation-sensitive acid generators.
Figure JPOXMLDOC01-appb-C000056
Figure JPOXMLDOC01-appb-C000056
 本発明の感光性樹脂組成物において、光酸発生剤の含有量は、感光性樹脂組成物の全固形分を基準として、1~30質量%が好ましく、3~20質量%がより好ましい。 In the photosensitive resin composition of the present invention, the content of the photoacid generator is preferably 1 to 30% by mass, more preferably 3 to 20% by mass based on the total solid content of the photosensitive resin composition.
 酸発生剤は、1種単独で又は2種以上を組み合わせて使用することができる。2種以上を組み合わせて使用する際には、水素原子を除く全原子数が2以上異なる2種の有機酸を発生する化合物を組み合わせることが好ましい。  The acid generator can be used alone or in combination of two or more. When two or more types are used in combination, it is preferable to combine two types of compounds that generate two types of organic acids that differ in the total number of atoms excluding hydrogen atoms by two or more. *
(b2)増感剤
 本発明の組成物には、活性光線又は放射線を吸収して上記スルフォニウム塩の分解を促進させるために増感剤を添加してもよい。増感剤は、活性光線又は放射線を吸収して電子励起状態となる。電子励起状態となった増感剤は、スルフォニウムと接触して、電子移動、エネルギー移動、発熱などの作用が生じる。これにより重合開始剤は化学変化を起こして分解し、ラジカル、酸或いは塩基を生成する。
 好ましい増感剤の例としては、以下の化合物類に属しており、かつ350nmから450nm域に吸収波長を有する化合物を挙げることができる。
 多核芳香族類(例えば、ピレン、ペリレン、トリフェニレン、アントラセン)、キサンテン類(例えば、フルオレッセイン、エオシン、エリスロシン、ローダミンB、ローズベンガル)、シアニン類(例えばチアカルボシアニン、オキサカルボシアニン)、メロシアニン類(例えば、メロシアニン、カルボメロシアニン)、チアジン類(例えば、チオニン、メチレンブルー、トルイジンブルー)、アクリジン類(例えば、アクリジンオレンジ、クロロフラビン、アクリフラビン)、アントラキノン類(例えば、アントラキノン)、スクアリウム類(例えば、スクアリウム)、クマリン類(例えば、7-ジエチルアミノ-4-メチルクマリン)。
(B2) Sensitizer A sensitizer may be added to the composition of the present invention in order to absorb actinic rays or radiation and promote the decomposition of the sulfonium salt. The sensitizer absorbs actinic rays or radiation and enters an electronically excited state. The sensitizer in an electronically excited state comes into contact with sulfonium, and effects such as electron transfer, energy transfer, and heat generation occur. As a result, the polymerization initiator undergoes a chemical change and decomposes to generate radicals, acids or bases.
Examples of preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in the 350 nm to 450 nm region.
Polynuclear aromatics (eg, pyrene, perylene, triphenylene, anthracene), xanthenes (eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal), cyanines (eg, thiacarbocyanine, oxacarbocyanine), merocyanine (Eg, merocyanine, carbomerocyanine), thiazines (eg, thionine, methylene blue, toluidine blue), acridines (eg, acridine orange, chloroflavin, acriflavine), anthraquinones (eg, anthraquinone), squalium (eg, , Squalium), coumarins (eg, 7-diethylamino-4-methylcoumarin).
 より好ましい増感剤の例としては、下記式(IX)~(XIV)で表される化合物が挙げられる。 More preferred examples of the sensitizer include compounds represented by the following formulas (IX) to (XIV).
Figure JPOXMLDOC01-appb-C000057
Figure JPOXMLDOC01-appb-C000057
 式(IX)中、Aは硫黄原子又はNR50を表し、R50はアルキル基又はアリール基を表し、Lは隣接するA及び隣接炭素原子と共同して色素の塩基性核を形成する非金属原子団を表し、R51、R52はそれぞれ独立に水素原子又は一価の非金属原子団を表し、R51、R52は互いに結合して、色素の酸性核を形成してもよい。Wは酸素原子又は硫黄原子を表す。 In formula (IX), A 1 represents a sulfur atom or NR 50 , R 50 represents an alkyl group or an aryl group, and L 2 forms a basic nucleus of the dye together with adjacent A 1 and an adjacent carbon atom. R 51 and R 52 each independently represent a hydrogen atom or a monovalent nonmetallic atomic group, and R 51 and R 52 may be bonded to each other to form an acidic nucleus of the dye. Good. W represents an oxygen atom or a sulfur atom.
Figure JPOXMLDOC01-appb-C000058
Figure JPOXMLDOC01-appb-C000058
 式(X)中、Ar及びArはそれぞれ独立にアリール基を表し、-L-による結合を介して連結している。ここでLは-O-又は-S-を表す。また、Wは式(IX)に示したものと同義である。 In the formula (X), Ar 1 and Ar 2 each independently represent an aryl group and are linked via a bond with —L 3 —. Here, L 3 represents —O— or —S—. W is synonymous with that shown in Formula (IX).
Figure JPOXMLDOC01-appb-C000059
Figure JPOXMLDOC01-appb-C000059
 式(XI)中、Aは硫黄原子又はNR59を表し、Lは隣接するA及び炭素原子と共同して色素の塩基性核を形成する非金属原子団を表し、R53、R54、R55、R56、R57及びR58はそれぞれ独立に一価の非金属原子団の基を表し、R59はアルキル基又はアリール基を表す。 In the formula (XI), A 2 represents a sulfur atom or NR 59 , L 4 represents a nonmetallic atomic group that forms a basic nucleus of the dye in combination with adjacent A 2 and a carbon atom, R 53 , R 54 , R 55 , R 56 , R 57 and R 58 each independently represent a monovalent nonmetallic atomic group, and R 59 represents an alkyl group or an aryl group.
Figure JPOXMLDOC01-appb-C000060
Figure JPOXMLDOC01-appb-C000060
 式(XII)中、A、Aはそれぞれ独立に-S-、-NR62-又は-NR63-を表し、R62、R63はそれぞれ独立に置換若しくは非置換のアルキル基、置換若しくは非置換のアリール基を表し、L、Lはそれぞれ独立に、隣接するA、A及び隣接炭素原子と共同して色素の塩基性核を形成する非金属原子団を表し、R60、R61はそれぞれ独立に水素原子又は一価の非金属原子団であるか又は互いに結合して脂肪族性又は芳香族性の環を形成することができる。 In formula (XII), A 3 and A 4 each independently represent —S—, —NR 62 — or —NR 63 —, and R 62 and R 63 each independently represent a substituted or unsubstituted alkyl group, substituted or Represents an unsubstituted aryl group, and L 5 and L 6 each independently represent a nonmetallic atomic group that forms a basic nucleus of a dye in cooperation with adjacent A 3 , A 4, and adjacent carbon atoms, and R 60 , R 61 each independently represents a hydrogen atom or a monovalent nonmetallic atomic group, or may be bonded to each other to form an aliphatic or aromatic ring.
Figure JPOXMLDOC01-appb-C000061
Figure JPOXMLDOC01-appb-C000061
 式(XIII)中、R66は置換基を有してもよい芳香族環又はヘテロ環を表し、Aは酸素原子、硫黄原子又は=NR67を表す。R64、R65及びR67はそれぞれ独立に水素原子又は一価の非金属原子団を表し、R67とR64、及びR65とR67はそれぞれ互いに脂肪族性又は芳香族性の環を形成するため結合することができる。 In formula (XIII), R 66 represents an aromatic ring or a hetero ring which may have a substituent, and A 5 represents an oxygen atom, a sulfur atom or ═NR 67 . R 64 , R 65 and R 67 each independently represent a hydrogen atom or a monovalent non-metallic atomic group, R 67 and R 64 , and R 65 and R 67 each represent an aliphatic or aromatic ring. Can be combined to form.
Figure JPOXMLDOC01-appb-C000062
Figure JPOXMLDOC01-appb-C000062
 式(XIV)中、R68、及びR69それぞれ独立に水素原子又は一価の非金属原子団を表す。R70、及び、R71は、それぞれ独立に一価の非金属原子団を表しnは0~4の整数を表す。nが2以上のときR70、R71はそれぞれ互いに脂肪族性又は芳香族性の環を形成するため結合することができる。 In formula (XIV), R 68 and R 69 each independently represent a hydrogen atom or a monovalent nonmetallic atomic group. R 70 and R 71 each independently represent a monovalent nonmetallic atomic group, and n represents an integer of 0 to 4. When n is 2 or more, R 70 and R 71 can be bonded to each other to form an aliphatic or aromatic ring.
 増感剤として、特にアントラセン誘導体が好ましい。 As the sensitizer, an anthracene derivative is particularly preferable.
 式(IX)~(XIV)で表される化合物の好ましい具体例としては、以下に示す(C-1)~(C-26)が挙げられるが、これらに限定されるものではない。 Specific preferred examples of the compounds represented by the formulas (IX) to (XIV) include (C-1) to (C-26) shown below, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000063
Figure JPOXMLDOC01-appb-C000063
Figure JPOXMLDOC01-appb-C000064
Figure JPOXMLDOC01-appb-C000064
Figure JPOXMLDOC01-appb-C000065
Figure JPOXMLDOC01-appb-C000065
Figure JPOXMLDOC01-appb-C000066
Figure JPOXMLDOC01-appb-C000066
 上述のような増感剤は、市販のものを用いてもよいし、公知の合成方法により合成してもよい。 The sensitizer as described above may be a commercially available one or may be synthesized by a known synthesis method.
 本発明の感光性樹脂組成物において、増感剤の含有量は、感光性樹脂組成物の全固形分を基準として、1~30質量%が好ましく、3~20質量%がより好ましい。 In the photosensitive resin composition of the present invention, the content of the sensitizer is preferably 1 to 30% by mass, more preferably 3 to 20% by mass based on the total solid content of the photosensitive resin composition.
(c)塩基性化合物
 本発明に係る組成物は、露光から加熱までの経時による性能変化を低減するために、塩基性化合物を含有することが好ましい。
 塩基性化合物としては、好ましくは、下記式(A)~(E)で示される構造を有する化合物を挙げることができる。
(C) Basic compound The composition according to the present invention preferably contains a basic compound in order to reduce a change in performance over time from exposure to heating.
Preferred examples of the basic compound include compounds having a structure represented by the following formulas (A) to (E).
Figure JPOXMLDOC01-appb-C000067
Figure JPOXMLDOC01-appb-C000067
 一般式(A)及び(E)中、
 R200、R201及びR202は、同一でも異なってもよく、水素原子、アルキル基(好ましくは炭素数1~20)、シクロアルキル基(好ましくは炭素数3~20)又はアリール基(炭素数6~20)を表し、ここで、R201とR202は、互いに結合して環を形成してもよい。
In general formulas (A) and (E),
R 200 , R 201 and R 202 may be the same or different and are a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group (having a carbon number). 6-20), wherein R 201 and R 202 may combine with each other to form a ring.
 R203、R204、R205及びR206は、同一でも異なってもよく、炭素数1~20個のアルキル基を表す。 
 上記アルキル基について、置換基を有するアルキル基としては、炭素数1~20のアミノアルキル基、炭素数1~20のヒドロキシアルキル基、又は炭素数1~20のシアノアルキル基が好ましい。 
 これら一般式(A)及び(E)中のアルキル基は、無置換であることがより好ましい。
R 203 , R 204 , R 205 and R 206 may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.
Regarding the alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.
The alkyl groups in the general formulas (A) and (E) are more preferably unsubstituted.
 好ましい化合物として、グアニジン、アミノピロリジン、ピラゾール、ピラゾリン、ピペラジン、アミノモルホリン、アミノアルキルモルフォリン、ピペリジン等を挙げることができ、更に好ましい化合物として、イミダゾール構造、ジアザビシクロ構造、オニウムヒドロキシド構造、オニウムカルボキシレート構造、トリアルキルアミン構造、アニリン構造又はピリジン構造を有する化合物、水酸基及び/又はエーテル結合を有するアルキルアミン誘導体、水酸基及び/又はエーテル結合を有するアニリン誘導体等を挙げることができる。 Preferred compounds include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine and the like, and more preferred compounds include imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate Examples thereof include a compound having a structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, and an aniline derivative having a hydroxyl group and / or an ether bond.
 イミダゾール構造を有する化合物としてはイミダゾール、2、4、5-トリフェニルイミダゾール、ベンズイミダゾール、2-フェニルベンゾイミダゾール等が挙げられる。ジアザビシクロ構造を有する化合物としては1、4-ジアザビシクロ[2,2,2]オクタン、1、5-ジアザビシクロ[4,3,0]ノナ-5-エン、1、8-ジアザビシクロ[5,4,0]ウンデカー7-エン等が挙げられる。オニウムヒドロキシド構造を有する化合物としてはテトラブチルアンモニウムヒドロキシド、トリアリールスルホニウムヒドロキシド、フェナシルスルホニウムヒドロキシド、2-オキソアルキル基を有するスルホニウムヒドロキシド、具体的にはトリフェニルスルホニウムヒドロキシド、トリス(t-ブチルフェニル)スルホニウムヒドロキシド、ビス(t-ブチルフェニル)ヨードニウムヒドロキシド、フェナシルチオフェニウムヒドロキシド、2-オキソプロピルチオフェニウムヒドロキシド等が挙げられる。オニウムカルボキシレート構造を有する化合物としてはオニウムヒドロキシド構造を有する化合物のアニオン部がカルボキシレートになったものであり、例えばアセテート、アダマンタンー1-カルボキシレート、パーフロロアルキルカルボキシレート等が挙げられる。トリアルキルアミン構造を有する化合物としては、トリ(n-ブチル)アミン、トリ(n-オクチル)アミン等を挙げることができる。アニリン化合物としては、2,6-ジイソプロピルアニリン、N,N-ジメチルアニリン、N,N-ジブチルアニリン、N,N-ジヘキシルアニリン等を挙げることができる。水酸基及び/又はエーテル結合を有するアルキルアミン誘導体としては、エタノールアミン、ジエタノールアミン、トリエタノールアミン、N-フェニルジエタノールアミン、トリス(メトキシエトキシエチル)アミン等を挙げることができる。水酸基及び/又はエーテル結合を有するアニリン誘導体としては、N,N-ビス(ヒドロキシエチル)アニリン等を挙げることができる。 Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, 2-phenylbenzimidazole and the like. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, and 1,8-diazabicyclo [5,4,0. ] Undecar 7-ene and the like. Examples of the compound having an onium hydroxide structure include tetrabutylammonium hydroxide, triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris ( t-butylphenyl) sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide, and the like. The compound having an onium carboxylate structure is a compound having an onium hydroxide structure in which the anion moiety is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate. Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine. Examples of aniline compounds include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutylaniline, N, N-dihexylaniline and the like. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris (methoxyethoxyethyl) amine. Examples of aniline derivatives having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline.
 好ましい塩基性化合物として、更に、フェノキシ基を有するアミン化合物、フェノキシ基を有するアンモニウム塩化合物、スルホン酸エステル基を有するアミン化合物及びスルホン酸エステル基を有するアンモニウム塩化合物を挙げることができる。 Preferred examples of the basic compound further include an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group.
 アミン化合物は、1級、2級、3級のアミン化合物を使用することができ、少なくとも1つのアルキル基が窒素原子に結合しているアミン化合物が好ましい。アミン化合物は、3級アミン化合物であることがより好ましい。アミン化合物は、少なくとも1つのアルキル基(好ましくは炭素数1~20)が窒素原子に結合していれば、アルキル基の他に、シクロアルキル基(好ましくは炭素数3~20)又はアリール基(好ましくは炭素数6~12)が窒素原子に結合していてもよい。アミン化合物は、アルキル鎖中に、酸素原子を有し、オキシアルキレン基が形成されていることが好ましい。オキシアルキレン基の数は、分子内に1つ以上、好ましくは3~9個、更に好ましくは4~6個である。オキシアルキレン基の中でもオキシエチレン基(-CHCHO-)又はオキシプロピレン基(-CH(CH)CHO-若しくは-CHCHCHO-)が好ましく、更に好ましくはオキシエチレン基である。 As the amine compound, a primary, secondary or tertiary amine compound can be used, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. The amine compound is more preferably a tertiary amine compound. As long as at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to a nitrogen atom, the amine compound has an cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (preferably having 3 to 20 carbon atoms). Preferably 6 to 12 carbon atoms may be bonded to the nitrogen atom. The amine compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
 アンモニウム塩化合物は、1級、2級、3級、4級のアンモニウム塩化合物を使用することができ、少なくとも1つのアルキル基が窒素原子に結合しているアンモニウム塩化合物が好ましい。アンモニウム塩化合物は、少なくとも1つのアルキル基(好ましくは炭素数1~20)が窒素原子に結合していれば、アルキル基の他に、シクロアルキル基(好ましくは炭素数3~20)又はアリール基(好ましくは炭素数6~12)が窒素原子に結合していてもよい。アンモニウム塩化合物は、アルキル鎖中に、酸素原子を有し、オキシアルキレン基が形成されていることが好ましい。オキシアルキレン基の数は、分子内に1つ以上、好ましくは3~9個、更に好ましくは4~6個である。オキシアルキレン基の中でもオキシエチレン基(-CHCHO-)若しくはオキシプロピレン基(-CH(CH)CHO-若しくは-CHCHCHO-)が好ましく、更に好ましくはオキシエチレン基である。 As the ammonium salt compound, a primary, secondary, tertiary, or quaternary ammonium salt compound can be used, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. In addition to the alkyl group, the ammonium salt compound may be a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group, provided that at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to the nitrogen atom. (Preferably having 6 to 12 carbon atoms) may be bonded to a nitrogen atom. The ammonium salt compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
 アンモニウム塩化合物のアニオンとしては、ハロゲン原子、スルホネート、ボレート、フォスフェート等が挙げられるが、中でもハロゲン原子、スルホネートが好ましい。ハロゲン原子としてはクロライド、ブロマイド、アイオダイドが特に好ましく、スルホネートとしては、炭素数1~20の有機スルホネートが特に好ましい。有機スルホネートとしては、炭素数1~20のアルキルスルホネート、アリールスルホネートが挙げられる。アルキルスルホネートのアルキル基は置換基を有していてもよく、置換基としては例えばフッ素、塩素、臭素、アルコキシ基、アシル基、アリール基等が挙げられる。アルキルスルホネートとして、具体的にはメタンスルホネート、エタンスルホネート、ブタンスルホネート、ヘキサンスルホネート、オクタンスルホネート、ベンジルスルホネート、トリフルオロメタンスルホネート、ペンタフルオロエタンスルホネート、ノナフルオロブタンスルホネート等が挙げられる。アリールスルホネートのアリール基としてはベンゼン環、ナフタレン環、アントラセン環が挙げられる。ベンゼン環、ナフタレン環、アントラセン環は置換基を有していてもよく、置換基としては炭素数1~6の直鎖若しくは分岐アルキル基、炭素数3~6のシクロアルキル基が好ましい。直鎖若しくは分岐アルキル基、シクロアルキル基として、具体的にはメチル、エチル、n-プロピル、イソプロピル、n-ブチル、i-ブチル、t-ブチル、n-ヘキシル、シクロヘキシル等が挙げられる。他の置換基としては炭素数1~6のアルコキシ基、ハロゲン原子、シアノ、ニトロ、アシル基、アシロキシ基等が挙げられる。 Examples of the anion of the ammonium salt compound include halogen atoms, sulfonates, borates, and phosphates. Among them, halogen atoms and sulfonates are preferable. The halogen atom is particularly preferably chloride, bromide or iodide, and the sulfonate is particularly preferably an organic sulfonate having 1 to 20 carbon atoms. Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates. The alkyl group of the alkyl sulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy groups, acyl groups, and aryl groups. Specific examples of the alkyl sulfonate include methane sulfonate, ethane sulfonate, butane sulfonate, hexane sulfonate, octane sulfonate, benzyl sulfonate, trifluoromethane sulfonate, pentafluoroethane sulfonate, and nonafluorobutane sulfonate. Examples of the aryl group of the aryl sulfonate include a benzene ring, a naphthalene ring and an anthracene ring. The benzene ring, naphthalene ring and anthracene ring may have a substituent, and the substituent is preferably a linear or branched alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms. Specific examples of the linear or branched alkyl group and cycloalkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl, cyclohexyl and the like. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.
 フェノキシ基を有するアミン化合物、フェノキシ基を有するアンモニウム塩化合物とは、アミン化合物又はアンモニウム塩化合物のアルキル基の窒素原子と反対側の末端にフェノキシ基を有するものである。フェノキシ基は、置換基を有していてもよい。フェノキシ基の置換基としては、例えば、アルキル基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、カルボキシル基、カルボン酸エステル基、スルホン酸エステル基、アリール基、アラルキル基、アシロキシ基、アリールオキシ基等が挙げられる。置換基の置換位は、2~6位のいずれであってもよい。置換基の数は、1~5の範囲で何れであってもよい。 An amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group are those having a phenoxy group at the terminal opposite to the nitrogen atom of the alkyl group of the amine compound or ammonium salt compound. The phenoxy group may have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, an acyloxy group, and an aryloxy group. Etc. The substitution position of the substituent may be any of the 2-6 positions. The number of substituents may be any in the range of 1 to 5.
 フェノキシ基と窒素原子との間に、少なくとも1つのオキシアルキレン基を有することが好ましい。オキシアルキレン基の数は、分子内に1つ以上、好ましくは3~9個、更に好ましくは4~6個である。オキシアルキレン基の中でもオキシエチレン基(-CHCHO-)若しくはオキシプロピレン基(-CH(CH)CHO-若しくは-CHCHCHO-)が好ましく、更に好ましくはオキシエチレン基である。 It is preferable to have at least one oxyalkylene group between the phenoxy group and the nitrogen atom. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
 スルホン酸エステル基を有するアミン化合物、スルホン酸エステル基を有するアンモニウム塩化合物に於ける、スルホン酸エステル基としては、アルキルスルホン酸エステル、シクロアルキル基スルホン酸エステル、アリールスルホン酸エステルのいずれであっても良く、アルキルスルホン酸エステルの場合にアルキル基は炭素数1~20、シクロアルキルスルホン酸エステルの場合にシクロアルキル基は炭素数3~20、アリールスルホン酸エステルの場合にアリール基は炭素数6~12が好ましい。アルキルスルホン酸エステル、シクロアルキルスルホン酸エステル、アリールスルホン酸エステルは置換基を有していてもよく、置換基としては、ハロゲン原子、シアノ基、ニトロ基、カルボキシル基、カルボン酸エステル基、スルホン酸エステル基が好ましい。 In the amine compound having a sulfonic acid ester group and the ammonium salt compound having a sulfonic acid ester group, the sulfonic acid ester group may be any of alkyl sulfonic acid ester, cycloalkyl group sulfonic acid ester, and aryl sulfonic acid ester. In the case of an alkyl sulfonate ester, the alkyl group has 1 to 20 carbon atoms, in the case of a cycloalkyl sulfonate ester, the cycloalkyl group has 3 to 20 carbon atoms, and in the case of an aryl sulfonate ester, the aryl group has 6 carbon atoms. ~ 12 are preferred. Alkyl sulfonic acid ester, cycloalkyl sulfonic acid ester, and aryl sulfonic acid ester may have a substituent. Examples of the substituent include a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, and a sulfonic acid. An ester group is preferred.
 スルホン酸エステル基と窒素原子との間に、少なくとも1つのオキシアルキレン基を有することが好ましい。オキシアルキレン基の数は、分子内に1つ以上、好ましくは3~9個、更に好ましくは4~6個である。オキシアルキレン基の中でもオキシエチレン基(-CHCHO-)若しくはオキシプロピレン基(-CH(CH)CHO-若しくは-CHCHCHO-)が好ましく、更に好ましくはオキシエチレン基である。
 また、下記化合物も塩基性化合物として好ましい。
It is preferable to have at least one oxyalkylene group between the sulfonate group and the nitrogen atom. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH 2 CH 2 O—) or an oxypropylene group (—CH (CH 3 ) CH 2 O— or —CH 2 CH 2 CH 2 O—) is preferable, and more preferably oxy Ethylene group.
The following compounds are also preferable as the basic compound.
Figure JPOXMLDOC01-appb-C000068
Figure JPOXMLDOC01-appb-C000068
 これらの塩基性化合物は、1種類を単独で用いてもよく、2種類以上を組み合わせて用いてもよい。 
 本発明に係る組成物は、塩基性化合物を含有してもしなくても良いが、含有する場合、塩基性化合物の含有量は、組成物の全固形分を基準として、通常は0.001~10質量%であり、好ましくは0.01~5質量%である。
These basic compounds may be used individually by 1 type, and may be used in combination of 2 or more types.
The composition according to the present invention may or may not contain a basic compound. However, when it is contained, the content of the basic compound is usually 0.001 to on the basis of the total solid content of the composition. It is 10% by mass, preferably 0.01-5% by mass.
 酸発生剤と塩基性化合物との使用割合は、酸発生剤/塩基性化合物(モル比)=2.5~300であることが好ましい。即ち、感度、解像度の点からモル比が2.5以上が好ましく、露光後加熱処理までの経時でのレリーフパターンの太りによる解像度の低下抑制の点から300以下が好ましい。酸発生剤/塩基性化合物(モル比)は、より好ましくは5.0~200、更に好ましくは7.0~150である。 The use ratio of the acid generator and the basic compound is preferably acid generator / basic compound (molar ratio) = 2.5 to 300. That is, the molar ratio is preferably 2.5 or more from the viewpoints of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the relief pattern over time until post-exposure heat treatment. The acid generator / basic compound (molar ratio) is more preferably from 5.0 to 200, still more preferably from 7.0 to 150.
(d)熱酸発生剤
 本発明には熱酸発生剤を含有してもよい。熱酸発生剤とは、熱により酸が発生する化合物であり、通常、熱分解点が130℃~250℃、好ましくは150℃~220℃の範囲の化合物であり、例えば、加熱によりスルホン酸、カルボン酸、ジスルホニルイミドなどの低求核性の酸を発生する化合物である。
 発生酸としてはpKaが2以下と強い、スルホン酸や電子求引基の置換したアルキル乃至はアリールカルボン酸、同じく電子求引基の置換したジスルホニルイミドなどが好ましい。電子求引基としてはF原子などのハロゲン原子、トリフルオロメチル基等のハロアルキル基、ニトロ基、シアノ基を挙げることができる。
 熱酸発生剤は保存経時中や組成物を塗布した後のプリベーク工程では分解せず、パターニング後の加熱硬化工程で速やかに分解することが求められる。従って熱分解点としては100℃~300℃が好ましい。より好ましくは120℃~250℃であり、更に好ましくは150℃~200℃である。
 熱酸発生剤としては、上記露光により酸を発生する光酸発生剤の適用が可能である。例えばスルホニウム塩やヨードニウム塩等のオニウム塩、N-ヒドロキシイミドスルホネート化合物、オキシムスルホネート、o-ニトロベンジルスルホネート等を挙げることができる。
(D) Thermal acid generator The present invention may contain a thermal acid generator. The thermal acid generator is a compound that generates an acid by heat, and is usually a compound having a thermal decomposition point in the range of 130 ° C. to 250 ° C., preferably 150 ° C. to 220 ° C., for example, sulfonic acid, It is a compound that generates a low nucleophilic acid such as carboxylic acid or disulfonylimide.
As the generated acid, sulfonic acid, alkyl substituted with an electron withdrawing group or arylcarboxylic acid having a strong pKa of 2 or less, disulfonylimide substituted with an electron withdrawing group, and the like are preferable. Examples of the electron withdrawing group include a halogen atom such as an F atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
The thermal acid generator is required not to be decomposed during storage time or in a pre-baking process after applying the composition, but to be quickly decomposed in a heat-curing process after patterning. Therefore, the thermal decomposition point is preferably 100 ° C to 300 ° C. More preferably, it is 120 ° C to 250 ° C, and further preferably 150 ° C to 200 ° C.
As the thermal acid generator, a photoacid generator that generates an acid by the above-described exposure can be applied. Examples thereof include onium salts such as sulfonium salts and iodonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates, o-nitrobenzyl sulfonates and the like.
 好ましいスルホニウム塩としては例えば下記一般式(TA-1)~(TA-3)で表される化合物を挙げることができる。 Preferred examples of the sulfonium salt include compounds represented by the following general formulas (TA-1) to (TA-3).
Figure JPOXMLDOC01-appb-C000069
Figure JPOXMLDOC01-appb-C000069
 一般式(TA-1)において、
 RT1~RT5は、各々独立に、水素原子、アルキル基、シクロアルキル基、アルコキシ基又はハロゲン原子を表す。
 RT6及びRT7は、各々独立に、水素原子、アルキル基又はシクロアルキル基を表す。
 RT8及びRT9は、各々独立に、アルキル基、シクロアルキル基、アリル基又はビニル基を表す。
 RT1~RT5のいずれか2つ以上、RT6とRT7及びRT8とRT9は、それぞれ結合して環構造を形成しても良く、この環構造は、酸素原子、硫黄原子、ケトン結合、エステル結合、アミド結合を含んでいてもよい。
 RT1~RT5のいずれか2つ以上、RT6とRT7及びRT8とRT9が結合して形成する基としては、ブチレン基、ペンチレン基等を挙げることができる。
 Xは、非求核性アニオンを表し、前述の通りpKaが2以下と強い、スルホン酸や電子求引基の置換したアルキル乃至はアリールカルボン酸、同じく電子求引基の置換したジスルホニルイミドなどが好ましい。電子求引基としてはF原子などのハロゲン原子、トリフルオロメチル基等のハロアルキル基、ニトロ基、シアノ基を挙げることができる。
In general formula (TA-1),
R T1 to R T5 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.
R T6 and R T7 each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.
R T8 and R T9 each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.
Any two or more of R T1 to R T5 , R T6 and R T7, and R T8 and R T9 may be bonded to each other to form a ring structure, and this ring structure includes an oxygen atom, a sulfur atom, a ketone A bond, an ester bond, or an amide bond may be included.
Examples of the group formed by combining any two or more of R T1 to R T5 , R T6 and R T7, and R T8 and R T9 include a butylene group and a pentylene group.
X represents a non-nucleophilic anion, and has a strong pKa of 2 or less as described above, a sulfonic acid or an alkyl or aryl carboxylic acid substituted with an electron withdrawing group, or a disulfonylimide substituted with an electron withdrawing group. Etc. are preferable. Examples of the electron withdrawing group include a halogen atom such as an F atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
 一般式(TA-2)において、
 RT10及びRT11は、各々独立に、アルキル基、シクロアルキル基、アリル基又はビニル基を表す。
 RT10及びRT11は、それぞれ結合して環構造を形成しても良く、この環構造は、酸素原子、硫黄原子、ケトン結合、エステル結合、アミド結合を含んでいてもよい。
 RT10とRT11が結合して形成する基としては、ブチレン基、ペンチレン基等を挙げることができる。
 RT12~RT16は、各々独立に、水素原子、アルキル基、シクロアルキル基、アリール基、アルコキシ基、チオアルコキシ基、水酸基を表し、2つ以上が互いに結合してナフタレン環、アントラセン環等の多環芳香族環を形成しても良い。
 Xは、非求核性アニオンを表す。
In general formula (TA-2),
R T10 and R T11 each independently represent an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group.
R T10 and R T11 may be bonded to each other to form a ring structure, and this ring structure may contain an oxygen atom, a sulfur atom, a ketone bond, an ester bond, or an amide bond.
Examples of the group formed by combining R T10 and R T11 include a butylene group and a pentylene group.
R T12 to R T16 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a thioalkoxy group, or a hydroxyl group, and two or more of them are bonded to each other to form a naphthalene ring, an anthracene ring, etc. A polycyclic aromatic ring may be formed.
X represents a non-nucleophilic anion.
 一般式(TA-3)において、
 RT17は、アルキル基(直鎖又は分岐)又はシクロアルキル基を表し、好ましくは炭素数1~20個、より好ましくは炭素数1~12個の直鎖及び分岐アルキル基(例えば、メチル基、エチル基、直鎖又は分岐プロピル基、直鎖又は分岐ブチル基、直鎖又は分岐ペンチル基)を挙げることができる。シクロアルキル基としては、シクロペンチル基、シクロヘキシル基のような単環の環状アルキル基だけでなく、ノルボルニル基、トリシクロデカニル基、アダマンチル基の様な橋かけ部位を有する環状アルキル基も挙げることができる。
 RT18及びRT19は、各々独立に、水素原子、アルキル基又はシクロアルキル基を表す。
 RT20及びRT21は、各々独立に、アルキル基、シクロアルキル基、アリル基又はビニル基を表す。
 RT18とRT19及びRT20とRT21は、それぞれ結合して環構造を形成しても良く、この環構造は、酸素原子、硫黄原子、ケトン結合、エステル結合、アミド結合を含んでいてもよい。RT18とRT19及びRT20とRT21が結合して形成する基としては、ブチレン基、ペンチレン基等を挙げることができる。
 Xは、非求核性アニオンを表す。
In general formula (TA-3),
R T17 represents an alkyl group (straight chain or branched) or a cycloalkyl group, preferably a straight chain and branched alkyl group having 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms (for example, a methyl group, Ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group). Examples of the cycloalkyl group include not only a monocyclic cyclic alkyl group such as a cyclopentyl group and a cyclohexyl group, but also a cyclic alkyl group having a bridging site such as a norbornyl group, a tricyclodecanyl group, and an adamantyl group. it can.
R T18 and R T19 each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.
R T20 and R T21 each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.
R T18 and R T19 and R T20 and R T21 may be bonded to each other to form a ring structure, and this ring structure may contain an oxygen atom, a sulfur atom, a ketone bond, an ester bond, or an amide bond. Good. Examples of the group formed by combining R T18 and R T19 and R T20 and R T21 include a butylene group and a pentylene group.
X represents a non-nucleophilic anion.
 RT1~RT17としてのアルキル基は、直鎖、分岐状のいずれであってもよく、例えば炭素数1~20個、好ましくは炭素数1~12個の直鎖及び分岐アルキル基(例えば、メチル基、エチル基、直鎖又は分岐プロピル基、直鎖又は分岐ブチル基、直鎖又は分岐ペンチル基)を挙げることができる。
 RT1~RT17としてのシクロアルキル基は、単環のアルキル基とともに、多環、橋かけ部位を有する環状アルキル基をも含む意であり、RT12~RT16としてのシクロアルキル基は、好ましくは、炭素数3~8個のシクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基)である。
 RT17としてのシクロアルキル基は、炭素数3~8個のシクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基)とともに、ノルボルニル基、トリシクロデカニル基、アダマンチル基の様な橋かけ部位を有する環状アルキル基も好ましい。
The alkyl group as R T1 to R T17 may be linear or branched. For example, a linear or branched alkyl group having 1 to 20 carbon atoms, preferably 1 to 12 carbon atoms (for example, Methyl group, ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group).
The cycloalkyl group as R T1 to R T17 is meant to include a monocyclic alkyl group as well as a polycyclic and cyclic alkyl group having a bridging site, and the cycloalkyl group as R T12 to R T16 is preferably Is a cycloalkyl group having 3 to 8 carbon atoms (eg, cyclopentyl group, cyclohexyl group).
The cycloalkyl group as R T17 has a cycloalkyl group having 3 to 8 carbon atoms (eg, cyclopentyl group, cyclohexyl group) and a cyclic group having a bridging site such as a norbornyl group, a tricyclodecanyl group, or an adamantyl group. Also preferred are alkyl groups.
 RT1~RT5、T12~RT16としてのとしてのアルコキシ基は、直鎖、分岐、環状のいずれであってもよく、例えば炭素数1~10のアルコキシ基、好ましくは、炭素数1~5の直鎖及び分岐アルコキシ基(例えば、メトキシ基、エトキシ基、直鎖又は分岐プロポキシ基、直鎖又は分岐ブトキシ基、直鎖又は分岐ペントキシ基)、炭素数3~8の環状アルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基)を挙げることができる。
 RT12~RT16としてのチオアルコキシ基は、直鎖、分岐、環状のいずれであってもよく、例えば炭素数1~10のチオアルコキシ基、好ましくは、炭素数1~5の直鎖及び分岐チオアルコキシ基(例えば、チオメトキシ基、チオエトキシ基、直鎖又は分岐チオプロポキシ基、直鎖又は分岐チオブトキシ基、直鎖又は分岐チオペントキシ基)、炭素数3~8の環状チオアルコキシ基(例えば、チオシクロペンチルオキシ基、チオシクロヘキシルオキシ基)を挙げることができる。
The alkoxy group as R T1 to R T5 and R T12 to R T16 may be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably 1 to 1 carbon atoms. 5 linear and branched alkoxy groups (for example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), cyclic alkoxy groups having 3 to 8 carbon atoms (for example, , Cyclopentyloxy group, cyclohexyloxy group).
The thioalkoxy group as R T12 to R T16 may be linear, branched or cyclic, for example, a thioalkoxy group having 1 to 10 carbon atoms, preferably a linear or branched group having 1 to 5 carbon atoms. A thioalkoxy group (for example, a thiomethoxy group, a thioethoxy group, a linear or branched thiopropoxy group, a linear or branched thiobutoxy group, a linear or branched thiopentoxy group), a cyclic thioalkoxy group having 3 to 8 carbon atoms (for example, thiocyclopentyl) Oxy group, thiocyclohexyloxy group).
 Xとしての非求核性アニオンは、有機アニオンが好ましく、下記一般式に示す有機アニオンが特に好ましい。 The non-nucleophilic anion as X is preferably an organic anion, and particularly preferably an organic anion represented by the following general formula.
Figure JPOXMLDOC01-appb-C000070
Figure JPOXMLDOC01-appb-C000070
 上記一般式に於いて、
 Rcは、有機基を表す。
 Rcにおける有機基として、炭素数1~30のものが挙げられ、好ましくは置換基を有していてもよいアルキル基、シクロアルキル基、アリール基、又はこれらの複数が、単結合、-O-、-CO-、-S-、-SO-、-SON(Rd)-などの連結基で連結された基を挙げることができる。
 Rdは、水素原子又はアルキル基を表す。
 Rcは、1位がフッ素原子又はフロロアルキル基で置換されたアルキル基を表す。
 Rc及びRcは、各々独立に、1位がフッ素原子又はフロロアルキル基で置換された アルキル基を表す。好ましくは、炭素数1~4のパーフロロアルキル基である。
 RcとRcは互いに結合して環を形成していてもよい。
 RcとRcが結合して形成される基としてはアルキレン基、シクロアルキレン基、アリーレン基が挙げられる。好ましくは炭素数2~4のパーフロロアルキレン基である。
In the above general formula,
Rc 1 represents an organic group.
Examples of the organic group for Rc 1 include those having 1 to 30 carbon atoms, and preferably an alkyl group, a cycloalkyl group, an aryl group, or a plurality of these optionally having a substituent is a single bond, —O. -, - CO 2 -, - S -, - SO 3 -, - SO 2 N (Rd 1) - can be exemplified linked group a linking group such as.
Rd 1 represents a hydrogen atom or an alkyl group.
Rc 2 represents 1-position an alkyl group substituted with a fluorine atom or a fluoroalkyl group.
Rc 3 and Rc 4 each independently represents an alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group. Preferably, it is a perfluoroalkyl group having 1 to 4 carbon atoms.
Rc 3 and Rc 4 may be bonded to each other to form a ring.
Examples of the group formed by combining Rc 3 and Rc 4 include an alkylene group, a cycloalkylene group, and an arylene group. A perfluoroalkylene group having 2 to 4 carbon atoms is preferred.
 好ましいヨードニウム塩としては以下の一般式(TA-4)で表される化合物を挙げることができる。 Preferred examples of the iodonium salt include compounds represented by the following general formula (TA-4).
Figure JPOXMLDOC01-appb-C000071
Figure JPOXMLDOC01-appb-C000071
 式(TA-4)中、R41及びR42は、それぞれ水素原子、置換基を有していてもよいアルキル基、置換基を有していてもよいシクロアルキル基、置換基を有していてもよいアルコキシ基、置換基を有していてもよいアルコキシカルボニル基、置換基を有していてもよいアシル基、置換基を有していてもよいアシロキシ基、ニトロ基、ハロゲン原子、水酸基、カルボキシル基を表す。
 aは1~5を表し、bは1~5を表す。
 但し、R41及びR42の少なくとも一方は、炭素数5個以上の、置換基を有していてもよいアルキル基、置換基を有していてもよいシクロアルキル基、置換基を有していてもよいアルコキシ基、置換基を有していてもよいアルコキシカルボニル基、置換基を有していてもよいアシル基、置換基を有していてもよいアシロキシ基を表す。
 XはR-SOを表し、Rは置換基を有していてもよい脂肪族炭化水素基、置換基を有していてもよい芳香族炭化水素基を表す。
In formula (TA-4), R 41 and R 42 each have a hydrogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, or a substituent. An alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, an acyloxy group which may have a substituent, a nitro group, a halogen atom, a hydroxyl group Represents a carboxyl group.
a represents 1 to 5, and b represents 1 to 5.
However, at least one of R 41 and R 42 has an alkyl group having 5 or more carbon atoms, which may have a substituent, a cycloalkyl group which may have a substituent, or a substituent. An alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, and an acyloxy group which may have a substituent.
X represents R—SO 3 , and R represents an aliphatic hydrocarbon group which may have a substituent and an aromatic hydrocarbon group which may have a substituent.
 R41及びR42のアルキル基としては、置換基を有してもよい、メチル基、エチル基、プロピル基、n-ブチル基、イソブチル基、sec-ブチル基、t-ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、t-アミル基、デカニル基、ドデカニル基、ヘキサデカニル基のような炭素数1~25個のものが挙げられる。シクロアルキル基としては、置換基を有してもよい、シクロプロピル基、シクロペンチル基、シクロヘキシル基、シクロオクチル基、シクロドデカニル基、シクロヘキサデカニル基等のような炭素数3~25個のものが挙げられる。アルコキシ基としては、置換基を有してもよい、メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、n-ブトキシ基、イソブトキシ基、sec-ブトキシ基若しくはt-ブトキシ基、ペンチルオキシ基、t-アミロキシ基、n-ヘキシロキシ基、n-オクチルオキシ基、n-ドデカンオキシ基等のような炭素数1~25個のものが挙げられる。 As the alkyl group for R 41 and R 42 , an optionally substituted methyl group, ethyl group, propyl group, n-butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, Examples thereof include those having 1 to 25 carbon atoms such as hexyl group, heptyl group, octyl group, t-amyl group, decanyl group, dodecanyl group and hexadecanyl group. The cycloalkyl group has 3 to 25 carbon atoms which may have a substituent, such as cyclopropyl group, cyclopentyl group, cyclohexyl group, cyclooctyl group, cyclododecanyl group, cyclohexadecanyl group and the like. Things. The alkoxy group may have a substituent such as methoxy group, ethoxy group, propoxy group, isopropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group or t-butoxy group, pentyloxy group, t Examples thereof include those having 1 to 25 carbon atoms such as -amyloxy group, n-hexyloxy group, n-octyloxy group, n-dodecanoxy group and the like.
 アルコキシカルボニル基としては、置換基を有してもよい、メトキシカルボニル基、エトキシカルボニル基、プロポキシカルボニル基、イソプロポキシカルボニル基、n-ブトキシカルボニル基、イソブトキシカルボニル基、sec-ブトキシカルボニル基若しくはt-ブトキシカルボニル基、ペンチルオキシカルボニル基、t-アミロキシカルボニル基、n-ヘキシロキシカルボニル基、n-オクチルオキシカルボニル基、n-ドデカンオキシカルボニル基等のような炭素数2~25個のものが挙げられる。アシル基としては、置換基を有してもよい、ホルミル基、アセチル基、ブチリル基、バレリル基、ヘキサノイル基、オクタノイル基、t-ブチルカルボニル基、t-アミルカルボニル基等のような炭素数1~25個のものが挙げられる。アシロキシ基としては、置換基を有してもよい、アセトキシ基、プロピオニルオキシ基、ブチリルオキシ基、t-ブチリルオキシ基、t-アミリルオキシ基、n-ヘキサンカルボニロキシ基、n-オクタンカルボニロキシ基、n-ドデカンカルボニロキシ基、n-ヘキサデカンカルボニロキシ基、等のような炭素数2~25個のものが挙げられる。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子若しくはヨウ素原子を挙げることができる。 As the alkoxycarbonyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, an isopropoxycarbonyl group, an n-butoxycarbonyl group, an isobutoxycarbonyl group, a sec-butoxycarbonyl group or t which may have a substituent. Those having 2 to 25 carbon atoms such as -butoxycarbonyl group, pentyloxycarbonyl group, t-amyloxycarbonyl group, n-hexyloxycarbonyl group, n-octyloxycarbonyl group, n-dodecanoxycarbonyl group, etc. Can be mentioned. The acyl group may have a substituent and has 1 carbon atom such as formyl group, acetyl group, butyryl group, valeryl group, hexanoyl group, octanoyl group, t-butylcarbonyl group, t-amylcarbonyl group and the like. Up to 25 can be mentioned. As the acyloxy group, an acetoxy group, propionyloxy group, butyryloxy group, t-butyryloxy group, t-amylyloxy group, n-hexanecarbonyloxy group, n-octanecarbonyloxy group, which may have a substituent, Examples thereof include those having 2 to 25 carbon atoms such as n-dodecane carbonyloxy group, n-hexadecane carbonyloxy group, and the like. As the halogen atom, there can be mentioned a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.
 これらの基に対する置換基として好ましくは、炭素数1~4個のアルコキシ基、ハロゲン原子(フッ素原子、塩素原子、臭素原子、ヨウ素原子)、アシル基、アシロキシ基、シアノ基、水酸基、カルボキシ基、アルコキシカルボニル基、ニトロ基等を挙げることができる。なお、前記のように、R、Rの少なくとも一方は、炭素数5個以上である、置換基を有していてもよいアルキル基、置換基を有していてもよいシクロアルキル基、置換基を有していてもよいアルコキシ基、置換基を有していてもよいアルコキシカルボニル基、置換基を有していてもよいアシル基、置換基を有していてもよいアシロキシ基を表す。上記これらの炭素数5個以上の置換基としては、上記具体例のうち炭素数5~25個のものを挙げることができる。 As a substituent for these groups, an alkoxy group having 1 to 4 carbon atoms, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), an acyl group, an acyloxy group, a cyano group, a hydroxyl group, a carboxy group, An alkoxycarbonyl group, a nitro group, etc. can be mentioned. As described above, at least one of R 1 and R 2 has 5 or more carbon atoms and may have a substituent, a cycloalkyl group that may have a substituent, An alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, an acyloxy group which may have a substituent . Examples of the substituent having 5 or more carbon atoms include those having 5 to 25 carbon atoms in the above specific examples.
 上記の中でも、R41及びR42としての、置換基を有していてもよい、アルキル基としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、t-ブチル基、n-ペンチル基、t-アミル基、n-ヘキシル基、n-オクチル基、デカニル基が好ましく、シクロアルキル基としては、置換基を有してもよい、シクロヘキシル基、シクロオクチル基、シクロドデカニル基が好ましく、アルコキシ基としては、置換基を有してもよい、メトキシ基、エトキシ基、イソプロポキシ基、n-ブトキシ基、sec-ブトキシ基、t-ブトキシ基、ペンチルオキシ基、t-アミロキシ基、n-ヘキシロキシ基、n-オクチルオキシ基、n-ドデカンオキシ基が好ましく、アルコキシカルボニル基としては、置換基を有してもよい、メトキシカルボニル基、エトキシカルボニル基、イソプロポキシカルボニル基、n-ブトキシカルボニル基、sec-ブトキシカルボニル基、t-ブトキシカルボニル基、ペンチルオキシカルボニル基、t-アミロキシカルボニル基、n-ヘキシロキシカルボニル基、n-オクチルオキシカルボニル基、n-ドデカンオキシカルボニル基が好ましく、アシル基としては、置換基を有してもよい、ホルミル基、アセチル基、ブチリル基、バレリル基、ヘキサノイル基、オクタノイル基、t-ブチルカルボニル基、t-アミルカルボニル基が好ましく、アシロキシ基としては、置換基を有してもよい、アセトキシ基、プロピオニルオキシ基、ブチリルオキシ基、t-ブチリルオキシ基、t-アミリルオキシ基、n-ヘキサンカルボニロキシ基、n-オクタンカルボニロキシ基が好ましい。 Among these, as R 41 and R 42 , which may have a substituent, examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a t-butyl group, and n-pentyl. Group, t-amyl group, n-hexyl group, n-octyl group and decanyl group are preferable, and the cycloalkyl group is preferably a cyclohexyl group, cyclooctyl group or cyclododecanyl group which may have a substituent. As the alkoxy group, which may have a substituent, a methoxy group, an ethoxy group, an isopropoxy group, an n-butoxy group, a sec-butoxy group, a t-butoxy group, a pentyloxy group, a t-amyloxy group, n -Hexyloxy group, n-octyloxy group and n-dodecanoxy group are preferable, and the alkoxycarbonyl group may be a methoxy group which may have a substituent. Carbonyl group, ethoxycarbonyl group, isopropoxycarbonyl group, n-butoxycarbonyl group, sec-butoxycarbonyl group, t-butoxycarbonyl group, pentyloxycarbonyl group, t-amyloxycarbonyl group, n-hexyloxycarbonyl group, n -Octyloxycarbonyl group and n-dodecanoxycarbonyl group are preferred, and the acyl group may have a substituent, formyl group, acetyl group, butyryl group, valeryl group, hexanoyl group, octanoyl group, t-butyl A carbonyl group and a t-amylcarbonyl group are preferable, and the acyloxy group may have an acetoxy group, a propionyloxy group, a butyryloxy group, a t-butyryloxy group, a t-amylyloxy group, and an n-hexanecarbonyl group, which may have a substituent. Roxy group, n-octa N-carbonyloxy group is preferred.
 また、炭素数5個以上の、置換基を有していてもよい、アルキル基としてはn-ペンチル基、t-アミル基、n-ヘキシル基、n-オクチル基、デカニル基が好ましい。炭素数5個以上の、置換基を有していてもよい、シクロアルキル基としてはシクロヘキシル基、シクロオクチル基、シクロドデカニル基が好ましい。炭素数5個以上の、置換基を有していてもよい、アルコキシ基としては、ペンチルオキシ基、t-アミロキシ基、ヘキシルオキシ基、n-オクチルオキシ基、ドデカンオキシ基が好ましい。炭素数5個以上の、置換基を有していてもよい、アルコキシカルボニル基としては、ペンチルオキシカルボニル基、t-アミロキシカルボニル基、ヘキシルオキシカルボニル基、n-オクチルオキシカルボニル基、ドデカンオキシカルボニル基が好ましい。炭素数5個以上の、置換基を有していてもよい、アシル基としては、バレリル基、ヘキサノイル基、オクタノイル基、t-アミルカルボニル基が好ましい。炭素数5個以上の、置換基を有していてもよいアシロキシ基としては、t-アミリルオキシ基、n-ヘキサンカルボニロキシ基、n-オクタンカルボニロキシ基が好ましい。これらの基に対する置換基としては、メトキシ基、エトキシ基、t-ブトキシ基、塩素原子、臭素原子、シアノ基、水酸基、メトキシカルボニル基、エトキシカルボニル基、t-ブトキシカルボニル基、t-アミロキシカルボニル基が好ましい。 The alkyl group having 5 or more carbon atoms and optionally having a substituent is preferably an n-pentyl group, a t-amyl group, an n-hexyl group, an n-octyl group or a decanyl group. The cycloalkyl group having 5 or more carbon atoms and optionally having a substituent is preferably a cyclohexyl group, a cyclooctyl group or a cyclododecanyl group. The alkoxy group having 5 or more carbon atoms and optionally having a substituent is preferably a pentyloxy group, a t-amyloxy group, a hexyloxy group, an n-octyloxy group, or a dodecanoxy group. Examples of the alkoxycarbonyl group having 5 or more carbon atoms which may have a substituent include a pentyloxycarbonyl group, a t-amyloxycarbonyl group, a hexyloxycarbonyl group, an n-octyloxycarbonyl group, and dodecaneoxycarbonyl. Groups are preferred. The acyl group having 5 or more carbon atoms and optionally having a substituent is preferably a valeryl group, a hexanoyl group, an octanoyl group or a t-amylcarbonyl group. As the acyloxy group having 5 or more carbon atoms, which may have a substituent, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octanecarbonyloxy group are preferable. Substituents for these groups include methoxy group, ethoxy group, t-butoxy group, chlorine atom, bromine atom, cyano group, hydroxyl group, methoxycarbonyl group, ethoxycarbonyl group, t-butoxycarbonyl group, t-amyloxycarbonyl group Groups are preferred.
 本発明で使用される一般式(TA-4)で表されるヨードニウム化合物は、その対アニオン、Xとして、上記のように特定の構造を有するスルフォン酸を用いる。対アニオンにおける、Rの置換基を有していてもよい脂肪族炭化水素基としては、炭素数1~20個の直鎖あるいは分岐したアルキル基、又は環状のアルキル基を挙げることができる。また、Rは置換基を有していてもよい芳香族基を挙げることができる。上記のRのアルキル基としては、置換基を有してもよい、メチル基、エチル基、プロピル基、n-ブチル基、n-ペンチル基、n-ヘキシル基、n-オクチル基、2-エチルヘキシル基、デシル基、ドデシル基等の炭素数1~20のものを挙げることができる。環状アルキル基としては、置換基を有してもよい、シクロペンチル基、シクロヘキシル基、シクロオクチル基、シクロドデシル基、アダマンチル基、ノルボルニル基、樟脳基、トリシクロデカニル基、メンチル基等を挙げることができる。芳香族基としては、置換基を有してもよい、フェニル基、ナフチル基を挙げることができる。 The iodonium compound represented by formula (TA-4) used in the present invention uses sulfonic acid having a specific structure as described above as its counter anion, X . Examples of the aliphatic hydrocarbon group which may have an R substituent in the counter anion include a linear or branched alkyl group having 1 to 20 carbon atoms, or a cyclic alkyl group. Moreover, R can mention the aromatic group which may have a substituent. Examples of the alkyl group for R include a methyl group, an ethyl group, a propyl group, an n-butyl group, an n-pentyl group, an n-hexyl group, an n-octyl group, and 2-ethylhexyl, which may have a substituent. And those having 1 to 20 carbon atoms such as a group, a decyl group and a dodecyl group. Examples of the cyclic alkyl group include an optionally substituted cyclopentyl group, cyclohexyl group, cyclooctyl group, cyclododecyl group, adamantyl group, norbornyl group, camphor group, tricyclodecanyl group, menthyl group and the like. Can do. Examples of the aromatic group include a phenyl group and a naphthyl group, which may have a substituent.
 上記の中でも、Rの置換基を有していてもよい、アルキル基としては、メチル基、トリフルオロメチル基、エチル基、ペンタフルオロエチル基、2,2,2-トリフルオロエチル基、n-プロピル基、n-ブチル基、ノナフルオロブチル基、n-ペンチル基、n-ヘキシル基、n-オクチル基、ヘプタデカフルオロオクチル基、2-エチルヘキシル基、デシル基、ドデシル基、環状アルキル基としてはシクロペンチル基、シクロヘキシル基、樟脳基を挙げることができる。芳香族基としては、置換基を有してもよい、フェニル基、ナフチル基、ペンタフルオロフェニル基、p-トルイル基、p-フルオロフェニル基、p-クロロフェニル基、p-ヒドロキフェニル基、p-メトキシフェニル基、ドデシルフェニル基、メシチル基、トリイソプロピルフェニル基、4-ヒドロキシ-1-ナフチル基、6-ヒドロキシ-2-ナフチル基を挙げることができる。 Among the above, as the alkyl group which may have a substituent of R, a methyl group, a trifluoromethyl group, an ethyl group, a pentafluoroethyl group, a 2,2,2-trifluoroethyl group, n- Propyl group, n-butyl group, nonafluorobutyl group, n-pentyl group, n-hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, decyl group, dodecyl group, cyclic alkyl group A cyclopentyl group, a cyclohexyl group, and a camphor group can be mentioned. As the aromatic group, a phenyl group, a naphthyl group, a pentafluorophenyl group, a p-toluyl group, a p-fluorophenyl group, a p-chlorophenyl group, a p-hydroxyphenyl group, p-, which may have a substituent. Examples thereof include a methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group, 4-hydroxy-1-naphthyl group, and 6-hydroxy-2-naphthyl group.
 上記の各置換基の中でも、より好ましいR41及びR42の具体例としては、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、t-ブチル基、n-ペンチル基、t-アミル基、n-ヘキシル基、n-オクチル基、シクロヘキシル基、メトキシ基、エトキシ基、イソプロポキシ基、n-ブトキシ基、t-ブトキシ基、ペンチルオキシ基、t-アミロキシ基、ヘキシルオキシ基、n-オクチルオキシ基、メトキシカルボニル基、エトキシカルボニル基、n-ブトキシカルボニル基、t-ブトキシカルボニル基、t-アミロキシカルボニル基、ヘキシルオキシカルボニル基、n-オクチルオキシカルボニル基、ホルミル基、アセチル基、ブチリル基、ヘキサノイル基、オクタノイル基、t-ブチルカルボニル基、t-アミルカルボニル基、アセトキシ基、プロピオニルオキシ基、ブチリルオキシ基、t-ブチリルオキシ基、t-アミリルオキシ基、n-ヘキサンカルボニロキシ基、n-オクタンカルボニロキシ基、水酸基、塩素原子、臭素原子、ニトロ基である。より好ましい炭素数5個以上の基の具体例としては、n-ペンチル基、t-アミル基、n-ヘキシル基、n-オクチル基、デカニル基、シクロヘキシル基、ペンチルオキシ基、t-アミロキシ基、ヘキシルオキシ基、n-オクチルオキシ基、ドデカンオキシ基、ペンチルオキシカルボニル基、t-アミロキシカルボニル基、ヘキシルオキシカルボニル基、n-オクチルオキシカルボニル基、ドデカンオキシカルボニル基、バレリル基、ヘキサノイル基、オクタノイル基、t-アミルヵルボニル基、t-アミリルオキシ基、n-ヘキサンカルボニロキシ基、n-オククンカルボニロキシ基である。 Among the above substituents, more preferred specific examples of R 41 and R 42 are methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, n-pentyl group, t- Amyl group, n-hexyl group, n-octyl group, cyclohexyl group, methoxy group, ethoxy group, isopropoxy group, n-butoxy group, t-butoxy group, pentyloxy group, t-amyloxy group, hexyloxy group, n -Octyloxy group, methoxycarbonyl group, ethoxycarbonyl group, n-butoxycarbonyl group, t-butoxycarbonyl group, t-amyloxycarbonyl group, hexyloxycarbonyl group, n-octyloxycarbonyl group, formyl group, acetyl group, Butyryl group, hexanoyl group, octanoyl group, t-butylcarbonyl group, t-amylca Bonyl group, acetoxy group, propionyloxy group, butyryloxy group, t-butyryloxy group, t-amylyloxy group, n-hexanecarbonyloxy group, n-octanecarbonyloxy group, hydroxyl group, chlorine atom, bromine atom, nitro group is there. Specific examples of more preferable groups having 5 or more carbon atoms include n-pentyl group, t-amyl group, n-hexyl group, n-octyl group, decanyl group, cyclohexyl group, pentyloxy group, t-amyloxy group, Hexyloxy group, n-octyloxy group, dodecaneoxy group, pentyloxycarbonyl group, t-amyloxycarbonyl group, hexyloxycarbonyl group, n-octyloxycarbonyl group, dodecanoxyoxycarbonyl group, valeryl group, hexanoyl group, octanoyl group A t-amylcarbonyl group, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octenecarbonyloxy group.
 より好ましいスルフォン酸置換基Rの具体例としては、メチル基、トリフルオロメチル基、エチル基、ペンタフルオロエチル基、2,2,2-トリフルオロエチル基、n-ブチル基、ノナフルオロブチル基、n-ヘキシル基、n-オクチル基、ヘプタデカフルオロオクチル基、2-エチルヘキシル基、樟脳基、フェニル基、ナフチル基、ペンタフルオロフェニル基、p-トルイル基、p-フルオロフェニル基、p-クロロフェニル基、p-メトキシフェニル基、ドデシルフェニル基、メシチル基、トリイソプロピルフェニル基、4-ヒドロキシ-1-ナフチル基、6-ヒドロキシ-2-ナフチル基である。 Specific examples of the more preferable sulfonic acid substituent R include methyl group, trifluoromethyl group, ethyl group, pentafluoroethyl group, 2,2,2-trifluoroethyl group, n-butyl group, nonafluorobutyl group, n-hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, camphor group, phenyl group, naphthyl group, pentafluorophenyl group, p-toluyl group, p-fluorophenyl group, p-chlorophenyl group P-methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group, 4-hydroxy-1-naphthyl group, 6-hydroxy-2-naphthyl group.
 発生する酸の総炭素数としては1~30個が好ましい。より好ましくは1~28個であり、更に好ましくは1~25個である。その総炭素数が1個未満の場合、揮発による解像不良など支障をきたす場合があり、30個を超えると、現像残渣が生じる場合があるなど好ましくない。
 以下に、一般式(TA-4)で表される化合物の具体例を示すが、これらに限定されるものではない。これらの化合物は、単独で、若しくは2種以上の組み合わせで用いられる。
The total number of carbon atoms of the acid generated is preferably 1-30. More preferably, the number is 1 to 28, and still more preferably 1 to 25. If the total number of carbon atoms is less than 1, troubles such as poor resolution due to volatilization may occur, and if it exceeds 30, the development residue may be generated.
Specific examples of the compound represented by formula (TA-4) are shown below, but are not limited thereto. These compounds are used alone or in combination of two or more.
Figure JPOXMLDOC01-appb-C000072
Figure JPOXMLDOC01-appb-C000072
 熱酸発生剤として好ましいイミドスルホネート化合物としては、以下の一般式の化合物を挙げることができる。 Examples of the imide sulfonate compound preferable as the thermal acid generator include compounds of the following general formula.
Figure JPOXMLDOC01-appb-C000073
Figure JPOXMLDOC01-appb-C000073
 式中、C(炭素原子)とC(炭素原子)間は単結合あるいは二重結合で結合され、R51又はR52は、同じでも異なってもよく、下記(1)~(4)のいずれかを表し、
(1)それぞれ独立に水素原子、アルキル基、シクロアルキル基、アリール基、(2)C、Cとともに1つあるいは複数のヘテロ原子を含んでよい単環又は多環を形成する、
(3)CとCを含む縮合した芳香環を形成する、(4)N-スルフォニルオキシイミドを含む残基を表す。
 R53はアルキル基、ハロゲン化アルキル基、環状アルキル基、アルケニル基、置換基を有してよいアリール基、置換基を有してよいアラルキル基、又は樟脳基を表す。
In the formula, C 1 (carbon atom) and C 2 (carbon atom) are bonded by a single bond or a double bond, and R 51 or R 52 may be the same or different, and the following (1) to (4) Represents one of the following:
(1) each independently a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, and (2) a monocyclic or polycyclic ring that may contain one or more heteroatoms together with C 1 and C 2 .
(3) Represents a residue containing (4) N-sulfonyloxyimide that forms a condensed aromatic ring containing C 1 and C 2 .
R 53 represents an alkyl group, a halogenated alkyl group, a cyclic alkyl group, an alkenyl group, an aryl group which may have a substituent, an aralkyl group which may have a substituent, or a camphor group.
 一般式(TA-5)における、R51及びR52が(1)のケースに当たる場合、アルキル基としては、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、sec-ブチル基、tert-ブチル基の様な炭素数1~4個のアルキル基があげられる。シクロアルキル基としては、シクロプロピル基、シクロペンチル基、シクロヘキシル基、シクロオクチル基等炭素数3~8個のものがあげられる。アリール基としては、フェニル基、トリル基、キシリル基、メシチル基、ナフチル基の様な炭素数6~14個のものをあげることができる。R51及びR52が(2)のケースに当たる場合、例えば以下の様な部分構造をあげることができる。 In the general formula (TA-5), when R 51 and R 52 correspond to the case of (1), the alkyl group includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, Examples thereof include an alkyl group having 1 to 4 carbon atoms such as a tert-butyl group. Examples of the cycloalkyl group include those having 3 to 8 carbon atoms such as cyclopropyl group, cyclopentyl group, cyclohexyl group, cyclooctyl group and the like. Examples of the aryl group include those having 6 to 14 carbon atoms such as phenyl group, tolyl group, xylyl group, mesityl group, and naphthyl group. When R 51 and R 52 correspond to the case (2), for example, the following partial structure can be given.
Figure JPOXMLDOC01-appb-C000074
Figure JPOXMLDOC01-appb-C000074
 R51及びR52が(3)のケースに当たる場合、例えば以下の様な部分構造をあげることができる。 When R 51 and R 52 correspond to the case of (3), for example, the following partial structure can be given.
Figure JPOXMLDOC01-appb-C000075
Figure JPOXMLDOC01-appb-C000075
 R51及びR52が(4)のケースに当たる場合は、いわゆる少なくとも2つのN-スルフォニルオキシイミド残基が上記(1)~(3)の部分構造を有するR51及びR52の部分で単結合若しくは以下のような2価の有機基で結合したものをあげることができる。但し、下記連結基は単独であるいは2つ以上の組合せで使用される。
 〔2価の有機基〕:-O-、-S-、-SO-、-SO-、-NH-、-CO-、-CO-、-NHSO-、-NHCO-、-NHCO-、
When R 51 and R 52 correspond to the case of (4), so-called at least two N-sulfonyloxyimide residues are a single bond at the R 51 and R 52 portions having the partial structures of (1) to (3) above. Or the thing couple | bonded with the following bivalent organic groups can be mention | raise | lifted. However, the following linking groups are used alone or in combination of two or more.
[Divalent organic group]: -O -, - S -, - SO -, - SO 2 -, - NH -, - CO -, - CO 2 -, - NHSO 2 -, - NHCO -, - NHCO 2 -,
Figure JPOXMLDOC01-appb-C000076
Figure JPOXMLDOC01-appb-C000076
(R55及びR56は、各々、水素原子又はメチル基を表す。mは1~4の整数を表す。) (R 55 and R 56 each represents a hydrogen atom or a methyl group. M represents an integer of 1 to 4.)
 R53のアルキル基としては炭素数1~20個の直鎖あるいは分岐のアルキル基をあげることができる。好ましくは炭素数1~16個の直鎖あるいは分岐のアルキル基であり、更に好ましくは炭素数1~12個のものである。炭素数が21個以上のアルキル基の場合、感度、解像力が低下するため好ましくない。ハロゲン化アルキル基としては上記アルキル基の1つあるいは2つ以上の水素原子がハロゲン化されたものをあげることができる。置換するハロゲン原子としてはフッ素原子、塩素原子、臭素原子、ヨウ素原子をあげることができる。好ましくはフッ素原子、塩素原子、臭素原子であり、特に好ましくはフッ素原子である。但し、置換するハロゲン原子は一分子当たり複数の種類であってもよい。環状アルキル基としては、シクロプロピル基、シクロペンチル基、シクロヘキシル基、シクロオクチル基等の炭素数3~12個のシクロアルキル基やノルボルニル基、アダマンチル基、トリシクロデカニル基等の多環状置換基をあげることができる。アルケニル基としては炭素数2~20個の直鎖あるいは分岐のアルケニル基をあげることができる。好ましくは炭素数2~16個の直鎖あるいは分岐のアルケニル基であり、更に好ましくは炭素数2~12個のものである。炭素数が21個以上のアルケニル基の場合、感度、解像力が低下するため好ましくない。 Examples of the alkyl group for R 53 include linear or branched alkyl groups having 1 to 20 carbon atoms. Preferred is a linear or branched alkyl group having 1 to 16 carbon atoms, and more preferred is one having 1 to 12 carbon atoms. In the case of an alkyl group having 21 or more carbon atoms, sensitivity and resolving power decrease, which is not preferable. Examples of the halogenated alkyl group include those in which one or two or more hydrogen atoms of the alkyl group are halogenated. Examples of the halogen atom to be substituted include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Preferred are a fluorine atom, a chlorine atom and a bromine atom, and particularly preferred is a fluorine atom. However, the halogen atom to be substituted may be plural types per molecule. Examples of the cyclic alkyl group include cycloalkyl groups having 3 to 12 carbon atoms such as cyclopropyl group, cyclopentyl group, cyclohexyl group, and cyclooctyl group, and polycyclic substituents such as norbornyl group, adamantyl group, and tricyclodecanyl group. I can give you. Examples of the alkenyl group include linear or branched alkenyl groups having 2 to 20 carbon atoms. A straight-chain or branched alkenyl group having 2 to 16 carbon atoms is preferable, and one having 2 to 12 carbon atoms is more preferable. In the case of an alkenyl group having 21 or more carbon atoms, sensitivity and resolving power decrease, which is not preferable.
 R53のアリール基としてはフェニル基、ナフチル基をあげることができ、アラルキル基としてはベンジル基をあげることができる。アリール基とアラルキル基の置換基としては、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基等の低級アルキル基、シクロペンチル基、シクロヘキシル基等のシクロアルキル基、フェニル基、トルイル基、キシリル基、メシチル基等のアリール基、メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、sec-ブトキシ基、tert-ブトキシ基等の低級アルコキシ基、ビニル基、アリル基、プロペニル基、ブテニル基等のアルケニル基、ホルミル基、アセチル基等のアシル基、ヒドロキシ基、カルボキシ基、シアノ基、ニトロ基、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子をあげることができる。好ましくは、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基等の低級アルキル基、シクロヘキシル基、フェニル基、トルイル基、メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、sec-ブトキシ基、tert-ブトキシ基等の低級アルコキシ基、シアノ基、ニトロ基、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子である。なおアリール基、アラルキル基上の置換基は2種類以上であっても構わない。
 以下にこれらの化合物の具体例を示すが、これらに限定されるものではない。
Examples of the aryl group of R 53 include a phenyl group and a naphthyl group, and examples of the aralkyl group include a benzyl group. Examples of the substituent of the aryl group and the aralkyl group include a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, and a tert-butyl group, a cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a phenyl group, a toluyl group, Aryl groups such as xylyl and mesityl groups, methoxy groups, ethoxy groups, propoxy groups, isopropoxy groups, sec-butoxy groups, tert-butoxy groups and other lower alkoxy groups, vinyl groups, allyl groups, propenyl groups, butenyl groups, etc. And an acyl group such as alkenyl group, formyl group and acetyl group, and halogen atoms such as hydroxy group, carboxy group, cyano group, nitro group, fluorine atom, chlorine atom, bromine atom and iodine atom. Preferably, a lower alkyl group such as a methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, cyclohexyl group, phenyl group, toluyl group, methoxy group, ethoxy group, propoxy group, isopropoxy group, sec-butoxy Group, lower alkoxy group such as tert-butoxy group, halogen atom such as cyano group, nitro group, fluorine atom, chlorine atom, bromine atom and iodine atom. Two or more kinds of substituents on the aryl group and the aralkyl group may be used.
Specific examples of these compounds are shown below, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000077
Figure JPOXMLDOC01-appb-C000077
Figure JPOXMLDOC01-appb-C000078
Figure JPOXMLDOC01-appb-C000078
 熱酸発生剤として好ましいオキシムスルホネート化合物としては以下の一般式の化合物を挙げることができる。 Preferred oxime sulfonate compounds as thermal acid generators include compounds of the following general formula.
Figure JPOXMLDOC01-appb-C000079
Figure JPOXMLDOC01-appb-C000079
 上記一般式(TA-6)中、R61及びR62は、炭素数1から16の置換基を有していても良いアルキル基、アルケニル基、アルキニル基、シクロアルキル基、シクロアルケニル基、置換基を有していても良いアリール基、ヘテロアリール基、シアノ基を表す。また、R61及びR62は、炭素数2から8の置換基を有していても良いアルキレン鎖、アルケニレン鎖、アルキニリン鎖、又は、置換基を有していても良いフェニレン、フリーレン、チエニレン、-O-、-S-、-N-、-CO-を含む連結鎖を介して、別の一般式
(TA-6)で表される化合物のR61又はR62と結合されていても良い。即ち、一般式(TA-6)で表される化合物は、オキシムスルホネート構造が連結鎖を介して2つ又は3つ有するものも包含する。
 R63は炭素数1~16個の置換基を有していても良いアルキル基、シクロアルキル基、置換基を有していても良いアリール基を表す。
In the above general formula (TA-6), R 61 and R 62 are an alkyl group, alkenyl group, alkynyl group, cycloalkyl group, cycloalkenyl group, substituted group which may have a substituent having 1 to 16 carbon atoms. An aryl group, a heteroaryl group or a cyano group which may have a group. R 61 and R 62 are an alkylene chain, alkenylene chain, alkynylline chain, which may have a substituent having 2 to 8 carbon atoms, or phenylene, freelen, thienylene, which may have a substituent, It may be bonded to R 61 or R 62 of the compound represented by another general formula (TA-6) through a linking chain containing —O—, —S—, —N—, and —CO—. . That is, the compound represented by the general formula (TA-6) includes those having two or three oxime sulfonate structures via a linking chain.
R 63 represents an alkyl group, a cycloalkyl group, or an aryl group which may have a substituent, which may have a substituent having 1 to 16 carbon atoms.
 R61~R63における炭素数1~16個のアルキル基としては、メチル基、エチル基、プロピル基、i-プロピル基、ブチル基、i-ブチル基、t-ブチル基、t-アミル基、n-ヘキシル基、n-オクチル基、i-オクチル基、n-デシル基、ウンデシル基、ドデシル基、ヘキサデシル基等のアルキル基、トリフルオロメチル基、ペルフルオロプロピル基、ペルフルオロブチル基、ペルフルオロ-t-ブチル基、ペルフルオロオクチル基、ペルフルオロウンデシル基、1,1-ビストリフルオロメチルエチル基、等が挙げられる。 Examples of the alkyl group having 1 to 16 carbon atoms in R 61 to R 63 include a methyl group, an ethyl group, a propyl group, an i-propyl group, a butyl group, an i-butyl group, a t-butyl group, a t-amyl group, alkyl groups such as n-hexyl group, n-octyl group, i-octyl group, n-decyl group, undecyl group, dodecyl group, hexadecyl group, trifluoromethyl group, perfluoropropyl group, perfluorobutyl group, perfluoro-t- Examples thereof include a butyl group, a perfluorooctyl group, a perfluoroundecyl group, and a 1,1-bistrifluoromethylethyl group.
 R61及びR62におけるアルケニル基としては、アリル基、メタリル基、ビニル基、メチルアリル基、1-ブテニル基、3-ブテニル基、2-ブテニル基、1,3-ペンタジエニル基、5-ヘキセニル基、2-オキソ-3-ペンテニル基、デカペンタエニル基、7-オクテニル基等が挙げられる。 Examples of the alkenyl group for R 61 and R 62 include allyl group, methallyl group, vinyl group, methylallyl group, 1-butenyl group, 3-butenyl group, 2-butenyl group, 1,3-pentadienyl group, 5-hexenyl group, Examples include 2-oxo-3-pentenyl group, decapentaenyl group, 7-octenyl group and the like.
 R61及びR62におけるアルキニル基としては、エチニル基、プロパルギル基、2-ブチニル基、4-ヘキシニル基、2-オクチニル基、フェニルエチニル基、シクロヘキシルエチニル基等が挙げられる。 Examples of the alkynyl group in R 61 and R 62 include ethynyl group, propargyl group, 2-butynyl group, 4-hexynyl group, 2-octynyl group, phenylethynyl group, cyclohexylethynyl group and the like.
 R61~R63におけるシクロアルキル基としては、置換基を有していてもよい、シクロプロピル基、シクロペンチル基、シクロヘキシル基のような炭素数3~8個のものが挙げられる。 Examples of the cycloalkyl group in R 61 to R 63 include those having 3 to 8 carbon atoms, such as a cyclopropyl group, a cyclopentyl group, and a cyclohexyl group, which may have a substituent.
 R61及びR62におけるシクロアルケニル基としては、シクロブテニル基、シクロヘキセニル基、シクロペンタジエニル基、ビシクロ〔4.2.4〕ドデカ-3,7-ジエン-5-イル基等が挙げられる。 Examples of the cycloalkenyl group for R 61 and R 62 include a cyclobutenyl group, a cyclohexenyl group, a cyclopentadienyl group, a bicyclo [4.2.4] dodeca-3,7-dien-5-yl group, and the like.
 R61~R63におけるアリール基としては、置換基を有していてもよい、フェニル基、トリル基、メトキシフェニル基、ナフチル基のような炭素数6~14個のものが挙げられる。 Examples of the aryl group in R 61 to R 63 include those having 6 to 14 carbon atoms, such as phenyl group, tolyl group, methoxyphenyl group, and naphthyl group, which may have a substituent.
 上記の置換基としては、アルキル基、シクロアルキル基、アルコキシ基、ハロゲン原子(フッ素原子、塩素原子、沃素原子)、シアノ基、ヒドロキシ基、カルボキシ基、ニトロ基、アリールオキシ基、アルキルチオ基、アラルキル基、下記一般式(1A)で示される基等が挙げられる。
 ここでアルキル基、シクロアルキル基は上記で挙げたものと同義である。アルコキシ基としては、メトキシ基、エトキシ基、ヒドロキシエトキシ基、プロポキシ基、n-ブトキシ基、イソブトキシ基、sec-ブトキシ基、t-ブトキシ基のような炭素数1~4個のものが挙げられる。アラルキル基としては、ベンジル基、ナフチルメチル基、フリル基、チエニル基などが挙げられる。
The above substituents include alkyl groups, cycloalkyl groups, alkoxy groups, halogen atoms (fluorine atoms, chlorine atoms, iodine atoms), cyano groups, hydroxy groups, carboxy groups, nitro groups, aryloxy groups, alkylthio groups, aralkyls. And groups represented by the following general formula (1A).
Here, the alkyl group and the cycloalkyl group have the same meanings as described above. Examples of the alkoxy group include those having 1 to 4 carbon atoms such as methoxy group, ethoxy group, hydroxyethoxy group, propoxy group, n-butoxy group, isobutoxy group, sec-butoxy group and t-butoxy group. Examples of the aralkyl group include a benzyl group, a naphthylmethyl group, a furyl group, and a thienyl group.
Figure JPOXMLDOC01-appb-C000080
Figure JPOXMLDOC01-appb-C000080
 上記式中、R61及びR62は、前記一般式(TA-6)中のR61及びR62と同義である。 In the above formula, R 61 and R 62 have the same meanings as R 61 and R 62 in formula (TA-6).
 一般式(TA-6)で表される化合物の具体例を以下に示すが、本発明はこれらに限定されるものではない。 Specific examples of the compound represented by the general formula (TA-6) are shown below, but the present invention is not limited thereto.
Figure JPOXMLDOC01-appb-C000081
Figure JPOXMLDOC01-appb-C000081
Figure JPOXMLDOC01-appb-C000082
Figure JPOXMLDOC01-appb-C000082
 熱酸発生剤として好ましいオキシムスルホネート系酸発生剤として、下記一般式(TA-7)で表される基を少なくとも1つ有する化合物を挙げることができる。 Preferred examples of the oxime sulfonate-based acid generator as the thermal acid generator include compounds having at least one group represented by the following general formula (TA-7).
Figure JPOXMLDOC01-appb-C000083
Figure JPOXMLDOC01-appb-C000083
(式(TA-7)中、R70a及びR70bは、それぞれ独立に有機基を表す。)
 R70a及びR70bの有機基は、炭素原子を含む基であり、炭素原子以外の原子(たとえば水素原子、酸素原子、窒素原子、硫黄原子、ハロゲン原子(フッ素原子、塩素原子等)等)を有していてもよい。
 R70aの有機基としては、直鎖、分岐又は環状のアルキル基又はアリール基が好ましい。これらのアルキル基、アリール基は置換基を有していても良い。該置換基としては、特に制限はなく、たとえばフッ素原子、炭素数1~6の直鎖、分岐又は環状のアルキル基等が挙げられる。ここで、「置換基を有する」とは、アルキル基又はアリール基の水素原子の一部又は全部が置換基で置換されていることを意味する。
 アルキル基としては、炭素数1~20が好ましく、炭素数1~10がより好ましく、炭素数1~8が更に好ましく、炭素数1~6が特に好ましく、炭素数1~4が最も好ましい。アルキル基としては、特に、部分的又は完全にハロゲン化されたアルキル基(以下、ハロゲン化アルキル基ということがある)が好ましい。なお、部分的にハロゲン化されたアルキル基とは、水素原子の一部がハロゲン原子で置換されたアルキル基を意味し、完全にハロゲン化されたアルキル基とは、水素原子の全部がハロゲン原子で置換されたアルキル基を意味する。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。すなわち、ハロゲン化アルキル基は、フッ素化アルキル基であることが好ましい。
 アリール基は、炭素数4~20が好ましく、炭素数4~10がより好ましく、炭素数6~10が最も好ましい。アリール基としては、特に、部分的又は完全にハロゲン化されたアリール基が好ましい。なお、部分的にハロゲン化されたアリール基とは、水素原子の一部がハロゲン原子で置換されたアリール基を意味し、完全にハロゲン化されたアリール基とは、水素原子の全部がハロゲン原子で置換されたアリール基を意味する。
 R70aとしては、特に、置換基を有さない炭素数1~4のアルキル基、又は炭素数1~4のフッ素化アルキル基が好ましい。
(In formula (TA-7), R 70a and R 70b each independently represents an organic group.)
The organic group of R 70a and R 70b is a group containing a carbon atom, and an atom other than a carbon atom (for example, a hydrogen atom, an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom (a fluorine atom, a chlorine atom, etc.)) You may have.
As the organic group for R 70a , a linear, branched, or cyclic alkyl group or aryl group is preferable. These alkyl groups and aryl groups may have a substituent. The substituent is not particularly limited, and examples thereof include a fluorine atom and a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms. Here, “having a substituent” means that part or all of the hydrogen atoms of the alkyl group or aryl group are substituted with a substituent.
The alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, still more preferably 1 to 8 carbon atoms, particularly preferably 1 to 6 carbon atoms, and most preferably 1 to 4 carbon atoms. As the alkyl group, a partially or completely halogenated alkyl group (hereinafter sometimes referred to as a halogenated alkyl group) is particularly preferable. The partially halogenated alkyl group means an alkyl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated alkyl group means that all of the hydrogen atoms are halogen atoms. Means an alkyl group substituted with Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is particularly preferable. That is, the halogenated alkyl group is preferably a fluorinated alkyl group.
The aryl group preferably has 4 to 20 carbon atoms, more preferably 4 to 10 carbon atoms, and most preferably 6 to 10 carbon atoms. As the aryl group, a partially or completely halogenated aryl group is particularly preferable. The partially halogenated aryl group means an aryl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated aryl group means that all of the hydrogen atoms are halogen atoms. Means an aryl group substituted with.
R 70a is particularly preferably an alkyl group having 1 to 4 carbon atoms having no substituent or a fluorinated alkyl group having 1 to 4 carbon atoms.
 R70bの有機基としては、直鎖、分岐又は環状のアルキル基、アリール基又はシアノ基が好ましい。R70bのアルキル基、アリール基としては、前記R70aで挙げたアルキル基、アリール基と同様のものが挙げられる。
 R70bとしては、特に、シアノ基、置換基を有さない炭素数1~8のアルキル基、又は炭素数1~8のフッ素化アルキル基が好ましい。
As the organic group for R 70b , a linear, branched, or cyclic alkyl group, aryl group, or cyano group is preferable. As the alkyl group and aryl group for R 70b, the same alkyl groups and aryl groups as those described above for R 70a can be used.
R 70b is particularly preferably a cyano group, an alkyl group having 1 to 8 carbon atoms having no substituent, or a fluorinated alkyl group having 1 to 8 carbon atoms.
 オキシムスルホネート系酸発生剤としては、下記一般式(TA-7a)又は(TA-7b)で表される化合物が、電子線の照射に対する酸発生効率が高いことから、好ましく用いられる。 As the oxime sulfonate-based acid generator, a compound represented by the following general formula (TA-7a) or (TA-7b) is preferably used because of its high acid generation efficiency against electron beam irradiation.
Figure JPOXMLDOC01-appb-C000084
Figure JPOXMLDOC01-appb-C000084
[式(TA-7a)中、m’は0又は1;Xは1又は2;R71は、炭素数1~12のアルキル基が置換していてもよいフェニル基、ヘテロアリール基、又は、m’が0の場合は更に炭素数2~6のアルコキシカルボニル基、フェノキシカルボニル基、CN(シアノ基);R72はR71と同義;R73’は、Xが1のとき炭素数1~18のアルキル基、Xが2のとき炭素数2~12のアルキレン基、フェニレン基;R74,R75は独立に水素原子、ハロゲン原子、炭素数1~6のアルキル基;Aは-S-、-O-、-N(R76)-を示す。R76はアルキル基、アリール基又はアラルキル基を示す。] [In the formula (TA-7a), m ′ is 0 or 1; X is 1 or 2; R 71 is a phenyl group, a heteroaryl group, or an alkyl group having 1 to 12 carbon atoms, or When m ′ is 0, an alkoxycarbonyl group having 2 to 6 carbon atoms, a phenoxycarbonyl group, CN (cyano group); R 72 is synonymous with R 71 ; R 73 ′ is 1 to 1 carbon atoms when X is 1; An alkyl group having 18 carbon atoms, an alkylene group having 2 to 12 carbon atoms when X is 2, a phenylene group; R 74 and R 75 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms; A is —S— , -O-, -N (R 76 )-. R76 represents an alkyl group, an aryl group or an aralkyl group. ]
Figure JPOXMLDOC01-appb-C000085
Figure JPOXMLDOC01-appb-C000085
[式(TA-7b)中、R71’は炭素数2~12のアルキレン基;R72、R74、R75、Aは上記と同義;R73は炭素数1~18のアルキル基を示す。] [In the formula (TA-7b), R 71 ′ is an alkylene group having 2 to 12 carbon atoms; R 72 , R 74 , R 75 and A are as defined above; R 73 is an alkyl group having 1 to 18 carbon atoms. . ]
 上記化合物としては、特に、下記チオレン含有オキシムスルホネートが好ましい。 As the above compound, the following thiolene-containing oxime sulfonate is particularly preferable.
Figure JPOXMLDOC01-appb-C000086
Figure JPOXMLDOC01-appb-C000086
 好ましいニトロベンジルスルホネートの一般式としては一般式(TA-9)で表される化合物を挙げることができる。 Preferred examples of the general formula of nitrobenzyl sulfonate include compounds represented by the general formula (TA-9).
Figure JPOXMLDOC01-appb-C000087
Figure JPOXMLDOC01-appb-C000087
(この式のZは、アルキル基、アリール基、アルキルアリール基、ハロゲン置換されたアルキル基、ハロゲン置換されたアリール基、ハロゲン置換されたアルキルアリール基、ニトロ置換されたアリール基、ニトロ置換されたアルキルアリール基、ニトロ置換基とハロゲン置換基を有するアリール基、ニトロ置換基とハロゲン置換基を有するアルキルアリール基、及び、式CSOCHR’C4-m(NO)を有する基から選ばれ、Rは水素原子又はメチル基を表し、R’は水素原子、メチル基、及びニトロ置換されたアリール基から選ばれ、各Qは炭化水素基、ヒドロカルボノキシ基、NO、ハロゲン原子及び有機ケイ素基から独立に選ばれ、mの値は0、1又は2であり、但しQは酸性の基ではない)
 一般式(TA-9)で表される化合物の具体例としては、例えば、以下の化合物を挙げることができる。
(Z in this formula is alkyl group, aryl group, alkylaryl group, halogen-substituted alkyl group, halogen-substituted aryl group, halogen-substituted alkylaryl group, nitro-substituted aryl group, nitro-substituted An alkylaryl group, an aryl group having a nitro substituent and a halogen substituent, an alkylaryl group having a nitro substituent and a halogen substituent, and the formula C 6 H 4 SO 3 CHR′C 6 H 4-m Q m (NO ) is selected from groups having 2, R represents a hydrogen atom or a methyl group, R 'are selected from hydrogen atoms and methyl groups, and nitro substituted aryl groups, each Q is a hydrocarbon group, hydrocarbonoxy carboxymethyl Independently selected from the group, NO 2 , halogen atoms and organosilicon groups, the value of m being 0, 1 or 2, where Q is not an acidic group)
Specific examples of the compound represented by the general formula (TA-9) include the following compounds.
Figure JPOXMLDOC01-appb-C000088
Figure JPOXMLDOC01-appb-C000088
 また、スルホン酸エステルも使用することができる。
 例えば、下記一般式(TA-1)で表されるスルホン酸エステルを挙げることができる。
       R’-SO-O-R”   (TA-1)
 上記式において、R’及びR”はそれぞれ独立に、置換基を有していても良い炭素数1~10の直鎖又は分岐又は環状のアルキル基又は置換を有していても良い炭素数6~20のアリール基を示す。置換基としては、水酸基、ハロゲン原子、シアノ基、ビニル基、アセチレン基炭素数1~10の直鎖又は環状のアルキル基が挙げられる。
 該スルホン酸エステルの好ましい具体例として下記が挙げられる。
Also sulfonic acid esters can be used.
For example, a sulfonic acid ester represented by the following general formula (TA-1) can be given.
R′—SO 2 —O—R ″ (TA-1)
In the above formula, R ′ and R ″ are each independently a linear or branched alkyl group having 1 to 10 carbon atoms which may have a substituent or an optionally substituted carbon group having 6 carbon atoms. Represents an aryl group of ˜20, and examples of the substituent include a hydroxyl group, a halogen atom, a cyano group, a vinyl group, an acetylene group, and a linear or cyclic alkyl group having 1 to 10 carbon atoms.
Preferable specific examples of the sulfonic acid ester include the following.
Figure JPOXMLDOC01-appb-C000089
Figure JPOXMLDOC01-appb-C000089
 スルホン酸エステルとして、下記一般式(TA-2)で表される化合物が、耐熱性の点で更に好ましい。
 スルホン酸エステルの分子量は、一般的には230~1000、好ましくは230~800である。
As the sulfonic acid ester, a compound represented by the following general formula (TA-2) is more preferable from the viewpoint of heat resistance.
The molecular weight of the sulfonate ester is generally 230 to 1000, preferably 230 to 800.
Figure JPOXMLDOC01-appb-C000090
Figure JPOXMLDOC01-appb-C000090
 Aは、h価の連結基を表す。 
 Rは、アルキル基、アリール基、アラルキル基、又は環状アルキル基を表す。
 R’は、水素原子、アルキル基、又はアラルキル基を表す。
 hは、2~8の整数を表す。
A represents an h-valent linking group.
R 0 represents an alkyl group, an aryl group, an aralkyl group, or a cyclic alkyl group.
R 0 ′ represents a hydrogen atom, an alkyl group, or an aralkyl group.
h represents an integer of 2 to 8.
 Aとしてのh価の連結基は、例えば、アルキレン基(例えばメチレン、エチレン、プロピレン等)、シクロアルキレン基(シクロへキシレン、シクロペンチレン等)、アリーレン基(1,2-フェニレン、1,3-フェニレン、1,4-フェニレン、ナフチレン等)、エーテル基、カルボニル基、エステル基、アミド基、及びこれらに基を組み合わせた2価の基の任意の水素原子をh-2個除いた基を挙げることができる。
 Aとしてのh価の連結基の炭素数は一般的に1~15であり、1~10であることが好ましく、1~6であることが更に好ましい。
The h-valent linking group as A includes, for example, an alkylene group (eg, methylene, ethylene, propylene, etc.), a cycloalkylene group (eg, cyclohexylene, cyclopentylene, etc.), an arylene group (1,2-phenylene, 1,3). -Phenylene, 1,4-phenylene, naphthylene, etc.), an ether group, a carbonyl group, an ester group, an amide group, and a group obtained by removing h-2 arbitrary hydrogen atoms from a divalent group combining these groups. Can be mentioned.
The carbon number of the h-valent linking group as A is generally 1 to 15, preferably 1 to 10, and more preferably 1 to 6.
 R及びR’のアルキル基としては、一般的には炭素数1~20のアルキル基であり、好ましくは炭素数1~15のアルキル基、更に好ましくは炭素数1~8のアルキル基である。具体的にはメチル、エチル、プロピル、ブチル、ヘキシル、オクチル等を挙げることができる。
 R及びR’のアラルキル基としては、一般的には炭素数7~25のアラルキル基であり、好ましくは炭素数7~20のアラルキル基、更に好ましくは炭素数7~15のアラルキル基である。具体的にはベンジル、トルイルメチル、メシチルメチル、フェネチル等を挙げることができる。
 Rの環状アルキル基としては、一般的には炭素数3~20の環状アルキル基であり、好ましくは炭素数4~20の環状アルキル基、更に好ましくは炭素数5~15の環状アルキル基である。具体的にはシクロペンチル、シクロヘキシル、ノルボルニル、樟脳基等を挙げることができる。
The alkyl group for R 0 and R 0 ′ is generally an alkyl group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 15 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms. is there. Specific examples include methyl, ethyl, propyl, butyl, hexyl, octyl and the like.
The aralkyl group for R 0 and R 0 ′ is generally an aralkyl group having 7 to 25 carbon atoms, preferably an aralkyl group having 7 to 20 carbon atoms, more preferably an aralkyl group having 7 to 15 carbon atoms. is there. Specific examples include benzyl, toluylmethyl, mesitylmethyl, phenethyl and the like.
The cyclic alkyl group for R 0 is generally a cyclic alkyl group having 3 to 20 carbon atoms, preferably a cyclic alkyl group having 4 to 20 carbon atoms, more preferably a cyclic alkyl group having 5 to 15 carbon atoms. is there. Specific examples include cyclopentyl, cyclohexyl, norbornyl, camphor group and the like.
 Aとしての連結基は、更に置換基を有していてもよく、置換基としては、アルキル基(炭素数1~10のアルキル基であり、具体的にはメチル、エチル、プロピル、ブチル、ヘキシル、オクチル等)、アラルキル基(炭素数7~15のアラルキル基であり、具体的にはベンジル、トルイルメチル、メシチルメチル、フェネチル等)、アリール基(炭素数6~10のアリール基であり、具体的にはフェニル、トルイル、キシリル、メシチル、ナフチル等)、アルコキシ基(アルコキシ基は、直鎖、分岐、環状のいずれであってもよい、炭素数1~10のアルコキシ基であり、具体的には、メトキシ、エトキシ、直鎖又は分岐プロポキシ、直鎖又は分岐ブトキシ、直鎖又は分岐ペントキシ、シクロペンチルオキシ、シクロヘキシルオキシ等)、アリールオキシ基(炭素数6~10のアリールオキシ基であり、具体的にはフェノキシ、トルイルオキシ、1-ナフトキシ等)、アルキルチオ基(直鎖、分岐、環状のいずれであってもよい、炭素数1~10のアルキルチオ基であり、具体的には、メチルチオ、エチルチオ、直鎖又は分岐プロピルチオ、シクロペンチルチオ、シクロヘキシルチオ)、アリールチオ基(炭素数6~10のアリールチオ基であり、具体的にはフェニルチオ、トルイルチオ、1-ナフチルチオ等)、アシルオキシ基(炭素数2~10のアシルオキシ基で、具体的には、アセトキシ、プロパノイルオキシ、ベンゾイルオキシ等)、アルコキシカルボニル基(炭素数1~10のアルコキシカルボニル基であり、具体的にはメトキシカルボニル、エトキシカルボニル、直鎖又は分岐プロポキシカルボニル、シクロペンチルオキシカルボニル、シクロヘキシルオキシカルボニル等)、を挙げることができる。 The linking group as A may further have a substituent. The substituent is an alkyl group (an alkyl group having 1 to 10 carbon atoms, specifically, methyl, ethyl, propyl, butyl, hexyl). Octyl, etc.), aralkyl groups (aralkyl groups having 7 to 15 carbon atoms, specifically benzyl, toluylmethyl, mesitylmethyl, phenethyl, etc.), aryl groups (aryl groups having 6 to 10 carbon atoms, specifically Are phenyl, toluyl, xylyl, mesityl, naphthyl, etc.), an alkoxy group (the alkoxy group may be linear, branched or cyclic, and has 1 to 10 carbon atoms, specifically, Methoxy, ethoxy, linear or branched propoxy, linear or branched butoxy, linear or branched pentoxy, cyclopentyloxy, cyclohexyloxy, etc.) A reeloxy group (an aryloxy group having 6 to 10 carbon atoms, specifically phenoxy, toluyloxy, 1-naphthoxy, etc.), an alkylthio group (which may be linear, branched or cyclic, the number of carbon atoms 1 to 10 alkylthio groups, specifically methylthio, ethylthio, linear or branched propylthio, cyclopentylthio, cyclohexylthio), arylthio groups (arylthio groups having 6 to 10 carbon atoms, specifically phenylthio , Toluylthio, 1-naphthylthio, etc.), acyloxy groups (acyloxy groups having 2 to 10 carbon atoms, specifically acetoxy, propanoyloxy, benzoyloxy, etc.), alkoxycarbonyl groups (alkoxycarbonyl having 1 to 10 carbon atoms) Groups such as methoxycarbonyl, ethoxycarbonyl, Or branched propoxycarbonyl, cyclopentyloxycarbonyl, cyclohexyloxycarbonyl, etc.), can be exemplified.
 一般式(2)において、Rはアルキル基及びアリール基が好ましい。R’は水素原子及び炭素数1~6のアルキル基が好ましく、水素原子、メチル基及びエチル基が好ましく、水素原子が最も好ましい。 In the general formula (2), R 0 is preferably an alkyl group or an aryl group. R 0 ′ is preferably a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, more preferably a hydrogen atom, a methyl group or an ethyl group, and most preferably a hydrogen atom.
 本発明のスルホン酸エステルとしては、下記の様な具体的化合物を例としてあげることができるが、これに限るものではない。 Examples of the sulfonic acid ester of the present invention include the following specific compounds, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000091
Figure JPOXMLDOC01-appb-C000091
Figure JPOXMLDOC01-appb-C000092
Figure JPOXMLDOC01-appb-C000092
 本発明のスルホン酸エステルは、市販のものを用いてもよいし、公知の方法で合成したものを用いてもよい。本発明のスルホン酸エステルは、例えば、塩基性条件下、スルホニルクロリド乃至はスルホン酸無水物を対応する多価アルコールと反応させることにより合成することができる。 As the sulfonic acid ester of the present invention, a commercially available one may be used, or one synthesized by a known method may be used. The sulfonic acid ester of the present invention can be synthesized, for example, by reacting sulfonyl chloride or sulfonic acid anhydride with a corresponding polyhydric alcohol under basic conditions.
 本発明の感光性樹脂組成物において、熱酸発生剤の含有量は、感光性樹脂組成物の全固形分を基準として、1~20質量%が好ましく、3~10質量%がより好ましい。 In the photosensitive resin composition of the present invention, the content of the thermal acid generator is preferably 1 to 20% by mass, more preferably 3 to 10% by mass based on the total solid content of the photosensitive resin composition.
(e)アルコキシメチル基及びアシルオキシメチル基の少なくとも1つを含有する化合物
 本発明の組成物にはアルコキシメチル基及びアシルオキシメチル基の少なくとも1つを含有する化合物を含んでいてもよい。低温キュアプロセスにおいても、硬化時のパターンの融解や熱収縮をも防止できる。
(E) Compound containing at least one of alkoxymethyl group and acyloxymethyl group The composition of the present invention may contain a compound containing at least one of alkoxymethyl group and acyloxymethyl group. Even in the low-temperature curing process, it is possible to prevent melting and thermal shrinkage of the pattern during curing.
 本発明におけるアルコキシメチル基及びアシルオキシメチル基の少なくとも1つを含有する化合物としては、アルコキシメチル基又はアシルオキシメチル基が、直接芳香族基や下記ウレア構造の窒素原子上に、トリアジン上に置換した化合物を代表的構造として挙げることができる。
 当該化合物が有するアルコキシメチル基又はアシルオキシメチル基は、炭素数2~5が好ましく、炭素数2又は3が好ましく、特に炭素数2が好ましい。
 当該化合物が有するアルコキシメチル基及びアシルオキシメチル基の総数は1~10が好ましく、より好ましくは2~8、特に好ましくは3~6である。
 当該化合物の分子量は好ましくは1500以下であり、180~1200が好ましい。
As the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group in the present invention, a compound in which an alkoxymethyl group or an acyloxymethyl group is substituted directly on an aromatic group or a nitrogen atom of the following urea structure on a triazine Can be cited as a representative structure.
The alkoxymethyl group or acyloxymethyl group of the compound preferably has 2 to 5 carbon atoms, preferably 2 or 3 carbon atoms, and particularly preferably 2 carbon atoms.
The total number of alkoxymethyl groups and acyloxymethyl groups possessed by the compound is preferably 1 to 10, more preferably 2 to 8, and particularly preferably 3 to 6.
The molecular weight of the compound is preferably 1500 or less, and preferably 180 to 1200.
Figure JPOXMLDOC01-appb-C000093
Figure JPOXMLDOC01-appb-C000093
 R100は、アルキル基又はアシル基を表す。
 R101及びR102は、独立に、一価の有機基を表し、互いに結合して環を形成してもよい。
R 100 represents an alkyl group or an acyl group.
R 101 and R 102 independently represent a monovalent organic group, and may be bonded to each other to form a ring.
 アルコキシメチル基又はアシルオキシメチル基が直接芳香族基に置換した化合物としては、例えば下記一般式の様な化合物を挙げることができる。 Examples of the compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted with an aromatic group include compounds having the following general formula.
Figure JPOXMLDOC01-appb-C000094
Figure JPOXMLDOC01-appb-C000094
 式中、Xは単結合又は2価の有機基を示し、個々のR104は独立にアルキル基又はアシル基を示し、R103は、水素原子、アルキル基、アルケニル基、アリール基、アラルキル基、又は、酸の作用により分解し、アルカリ可溶性基を生じる基(例えば、酸の作用により脱離する基、-C(RCOORで表される基(Rは水素原子又は炭素数1~4のアルキル基を表し、Rは酸の作用により脱離する基を表す。))を示す。
 R105は各々独立にアルキル基又はアルケニル基を示し、a、b及びcは各々独立に1~3であり、dは0~4であり、eは独立に0~3である。
 酸の作用により分解し、アルカリ可溶性基を生じる基、酸の作用により脱離する基、-C(RCOORで表される基については、一般式(1)におけるものと同様である。
In the formula, X represents a single bond or a divalent organic group, each R 104 independently represents an alkyl group or an acyl group, and R 103 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, Or a group that decomposes by the action of an acid to generate an alkali-soluble group (for example, a group that is eliminated by the action of an acid, a group represented by —C (R 4 ) 2 COOR 5 (R 4 is a hydrogen atom or a carbon number) Represents an alkyl group of 1 to 4, and R 5 represents a group capable of leaving by the action of an acid))).
R 105 each independently represents an alkyl group or an alkenyl group, a, b and c are each independently 1 to 3, d is 0 to 4, and e is independently 0 to 3.
The group capable of decomposing by the action of an acid to generate an alkali-soluble group, the group leaving by the action of an acid, and the group represented by —C (R 4 ) 2 COOR 5 are the same as those in the general formula (1). is there.
 アルコキシメチル基を有する化合物としては具体的に以下の構造を挙げることができる。アシルオキシメチル基を有する化合物は下記化合物のアルコキシメチル基をアシルオキシメチル基に変更した化合物を挙げることができる。アルコキシメチル基又はアシルオキシメチルを分子内に有する化合物としては以下の様な化合物を挙げることができるが、これらに限定されるものではない。 Specific examples of the compound having an alkoxymethyl group include the following structures. Examples of the compound having an acyloxymethyl group include compounds in which the alkoxymethyl group of the following compound is changed to an acyloxymethyl group. Examples of the compound having an alkoxymethyl group or acyloxymethyl in the molecule include, but are not limited to, the following compounds.
Figure JPOXMLDOC01-appb-C000095
Figure JPOXMLDOC01-appb-C000095
Figure JPOXMLDOC01-appb-C000096
Figure JPOXMLDOC01-appb-C000096
 アルコキシメチル基及びアシルオキシメチル基の少なくとも1つを含有する化合物は、市販のものを用いても、公知の方法により合成したものを用いても良い。
 耐熱性の観点で、アルコキシメチル基又はアシルオキシメチル基が、直接芳香環やトリアジン環上に置換した化合物が好ましい。
 これら化合物の添加量は本発明の樹脂の総量100質量部に対して、1~20質量部が好ましく、3~15質量部がより好ましい。
As the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group, a commercially available product or a compound synthesized by a known method may be used.
From the viewpoint of heat resistance, a compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring is preferable.
The addition amount of these compounds is preferably 1 to 20 parts by mass, and more preferably 3 to 15 parts by mass with respect to 100 parts by mass of the total amount of the resin of the present invention.
(e’)メタクリロイル基又はアクリロイル基を含む化合物
 本発明の組成物は、メタクリロイル基又はアクリロイル基を含む化合物を含有してもよい。
 メタクリロイル基又はアクリロイル基を含む化合物とは、アクリル酸エステル、メタクリル酸エステルからなる群から選択される化合物である。これら化合物は、アルカリ現像液には不溶であるため、組成物のアルカリ溶解性を抑制する働きがあり、未露光部の膜減りを抑制するために良好な画像形成に役立つ。また、具体的な反応機構は把握していないが、キュア反応の段階で、アクリル基やメタクリル基が組成物中化合物と反応することにより組成物を構成する成分の分子量が部分的に増加することで膜物性が向上する。そのため、アクリロイル基、メタクリロイル基を1分子中に2個以上、更に好ましくは4官能以上ある化合物とすることで、この化合物が架橋化合物的な機能が発揮できるために好ましい。
 また、アクリロリル基、メタクリロイル基を含む骨格が芳香環や脂環などの環構造、特に脂環構造を含む物であるものが露光光の透過率及びキュア膜の剛直性のためにより好ましい。
 更に、骨格中のエチレンオキサイド(EO)鎖、プロピレンオキサイド(PO)鎖の長さ(n)は長いと膜の剛直性が失われるためにn=1~5であることが好ましい。
(E ′) Compound containing methacryloyl group or acryloyl group The composition of the present invention may contain a compound containing methacryloyl group or acryloyl group.
The compound containing a methacryloyl group or an acryloyl group is a compound selected from the group consisting of acrylic acid esters and methacrylic acid esters. Since these compounds are insoluble in an alkaline developer, they have a function of suppressing the alkali solubility of the composition, and are useful for good image formation in order to suppress film loss in unexposed areas. In addition, although the specific reaction mechanism is not grasped, the molecular weight of components constituting the composition partially increases due to the reaction of the acrylic group or methacrylic group with the compound in the composition at the stage of the cure reaction. The film properties are improved. Therefore, it is preferable to use a compound having two or more acryloyl groups and methacryloyl groups in one molecule, more preferably four or more functional groups, because this compound can exhibit a function as a crosslinking compound.
Further, it is more preferable that the skeleton containing an acrylolyl group or a methacryloyl group is a ring structure such as an aromatic ring or an alicyclic ring, particularly a substance containing an alicyclic structure, because of the exposure light transmittance and the rigidity of the cured film.
Furthermore, if the length (n) of the ethylene oxide (EO) chain and propylene oxide (PO) chain in the skeleton is long, the rigidity of the film is lost, so that n = 1 to 5 is preferable.
 好ましい具体例としては、新中村化学工業社製 NKエステルシリーズで一官能のAMP-10G、AMP-20GY、AM30G、AM90G、AM230G、ACB-3、A-BH、A-IB、A-SA、A-OC-18E、720A、S-1800A,ISA、AM-130G、LA、M-20G、M-90G、M230G、PHE-1G、SA、CB-1、CB-3、CB-23、TOPOLENE-M、S-1800M、IB、OC-18E、S、二官能のA-200、A-400、A-600、A-1000、ABE-300、A-BPE-4、A-BPE-10、A-BPE-20、A-BPE-30、A-BPP-3、A-DOD、A-DCP、A-IBD-2E、A-NPG、701A、A-B1206PE、A-HD-N、A-NOD-N、APG-100、APG-200、APG-400、APG-700、1G、2G、3G、4G、9G、14G、23G、BG、BD、HD-N、NOD、IND、BPE-100、BPE-200、BPE-300、BPE-500、BPE-900、BPE-1300N、NPG、DCP、1206PE、701、3PG、9PG、3官能のA-9300、AT-30E、A-TMPT-3EO、A-TMPT-9EO、A-TMPT-3PO、A-TMM-3、A-TMM-3L、A-TMM-3LM-N、TMPT、TMPT-9EO、4官能以上のATM-35E、ATM-4E、AD-TMP、AD-TMP-L、ATM-4P、A-TMMT、A-DPHをあげることができる。
 特に好ましい例としては以下のような多官能のモノマーを挙げることができる。
Preferable specific examples include NK-10 series made by Shin-Nakamura Chemical Co., Ltd., monofunctional AMP-10G, AMP-20GY, AM30G, AM90G, AM230G, ACB-3, A-BH, A-IB, A-SA, A -OC-18E, 720A, S-1800A, ISA, AM-130G, LA, M-20G, M-90G, M230G, PHE-1G, SA, CB-1, CB-3, CB-23, TOPOLENE-M , S-1800M, IB, OC-18E, S, bifunctional A-200, A-400, A-600, A-1000, ABE-300, A-BPE-4, A-BPE-10, A- BPE-20, A-BPE-30, A-BPP-3, A-DOD, A-DCP, A-IBD-2E, A-NPG, 701A, A-B1206PE, A-HD-N A-NOD-N, APG-100, APG-200, APG-400, APG-700, 1G, 2G, 3G, 4G, 9G, 14G, 23G, BG, BD, HD-N, NOD, IND, BPE -100, BPE-200, BPE-300, BPE-500, BPE-900, BPE-1300N, NPG, DCP, 1206PE, 701, 3PG, 9PG, trifunctional A-9300, AT-30E, A-TMPT- 3EO, A-TMPT-9EO, A-TMPT-3PO, A-TMM-3, A-TMM-3L, A-TMM-3LM-N, TMPT, TMPT-9EO, 4 or more functional ATM-35E, ATM- Examples thereof include 4E, AD-TMP, AD-TMP-L, ATM-4P, A-TMMT, and A-DPH.
Particularly preferred examples include the following polyfunctional monomers.
Figure JPOXMLDOC01-appb-C000097
Figure JPOXMLDOC01-appb-C000097
Figure JPOXMLDOC01-appb-C000098
Figure JPOXMLDOC01-appb-C000098
 本発明の分子内にメタクリロイル基又はアクリロイル基を含む化合物の添加量は、一般式(1)で表される繰り返し単位を有する樹脂100質量部に対して、0.5質量部以上30質量部以下が好ましい。更に好ましくは、1質量部以上20質量部以下、特に好ましくは2質量部以上15質量部以下である。添加量をある0.5質量部以上とすることにより、より本発明の効果が得られ、添加量を適切に抑制することによりキュア膜の耐熱性低下を防止できる。 The addition amount of the compound containing a methacryloyl group or an acryloyl group in the molecule of the present invention is 0.5 parts by mass or more and 30 parts by mass or less with respect to 100 parts by mass of the resin having a repeating unit represented by the general formula (1). Is preferred. More preferably, they are 1 mass part or more and 20 mass parts or less, Most preferably, they are 2 mass parts or more and 15 mass parts or less. By making the addition amount 0.5 parts by mass or more, the effect of the present invention can be further obtained, and by suppressing the addition amount appropriately, it is possible to prevent a decrease in heat resistance of the cured film.
(f)密着促進剤
 本発明におけるポジ型感光性樹脂組成物には、必要により密着性付与のための有機ケイ素化合物、シランカップリング剤、レベリング剤等の密着促進剤を添加してもよい。これらの例としては、例えば、γ-アミノプロピルトリメトキシシラン、γ-アミノプロピルトリエトキシシラン、ビニルトリエトキシシラン、3-メタクリロキシプロピルトリメトキシシラン、3-アクリロキシプロピルトリメトキシシラン、p-スチリルトリメトキシシラン、3-メタクリロキシプロピルメチルジメトキシシラン、3-メタクリロキシプロピルメチルジエトキシシラン、γ-グリシドキシプロピルトリエトキシシラン、γ-メタクリロキシプロピルトリメトキシシラン、尿素プロピルトリエトキシシラン、トリス(アセチルアセトネート)アルミニウム、アセチルアセテートアルミニウムジイソプロピレートなどが挙げられる。密着促進剤を用いる場合は、本発明の樹脂100質量部に対して、0.1~20質量部が好ましく、0.5~10質量部がより好ましい。
(F) Adhesion promoter In the positive photosensitive resin composition in the present invention, an adhesion promoter such as an organosilicon compound, a silane coupling agent, and a leveling agent for imparting adhesion may be added as necessary. Examples of these are, for example, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, vinyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryl. Trimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane, ureapropyltriethoxysilane, tris ( Acetylacetonate) aluminum, acetylacetate aluminum diisopropylate and the like. When an adhesion promoter is used, it is preferably 0.1 to 20 parts by mass, more preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the resin of the present invention.
(g)溶剤
 溶剤は本発明の組成物を溶解できるものであれば特に限定されないが、塗布時に溶剤が必要以上に蒸発して塗布時に組成物の固形分が析出しないようにするため、100℃以上の沸点の溶剤が好ましい。 例えば、アルキレングリコールモノアルキルエーテルカルボキシレート、アルキレングリコールモノアルキルエーテル、乳酸アルキルエステル、アルコキシプロピオン酸アルキル、環状ラクトン(好ましくは炭素数4~10)、環を含有しても良いモノケトン化合物(好ましくは炭素数4~10)、アルキレンカーボネート、アルコキシ酢酸アルキル、ピルビン酸アルキル、アミド系溶媒等の有機溶剤を挙げることができる。
(G) Solvent The solvent is not particularly limited as long as it can dissolve the composition of the present invention. However, in order to prevent the solvent from evaporating more than necessary at the time of coating and precipitating the solid content of the composition at the time of coating, Solvents with the above boiling points are preferred. For example, alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate ester, alkyl alkoxypropionate, cyclic lactone (preferably having 4 to 10 carbon atoms), monoketone compound (preferably carbon And organic solvents such as alkylene carbonate, alkyl alkoxyacetate, alkyl pyruvate, and amide solvents.
 アルキレングリコールモノアルキルエーテルカルボキシレートとしては、例えば、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート、プロピレングリコールモノメチルエーテルプロピオネート、プロピレングリコールモノエチルエーテルプロピオネート、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテートが好ましく挙げられる。
 アルキレングリコールモノアルキルエーテルとしては、例えば、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテルを好ましく挙げられる。
Examples of the alkylene glycol monoalkyl ether carboxylate include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl Preferred examples include ether propionate, ethylene glycol monomethyl ether acetate, and ethylene glycol monoethyl ether acetate.
Preferred examples of the alkylene glycol monoalkyl ether include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene glycol monomethyl ether, and ethylene glycol monoethyl ether.
 乳酸アルキルエステルとしては、例えば、乳酸メチル、乳酸エチル、乳酸プロピル、乳酸ブチルを好ましく挙げられる。
 アルコキシプロピオン酸アルキルとしては、例えば、3-エトキシプロピオン酸エチル、3-メトキシプロピオン酸メチル、3-エトキシプロピオン酸メチル、3-メトキシプロピオン酸エチルを好ましく挙げられる。
Preferred examples of the alkyl lactate include methyl lactate, ethyl lactate, propyl lactate and butyl lactate.
Preferred examples of the alkyl alkoxypropionate include ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-methoxypropionate.
 環状ラクトンとしては、例えば、β-プロピオラクトン、β-ブチロラクトン、γ-ブチロラクトン、α-メチル-γ-ブチロラクトン、β-メチル-γ-ブチロラクトン、γ-バレロラクトン、γ-カプロラクトン、γ-オクタノイックラクトン、α-ヒドロキシ-γ-ブチロラクトンが好ましく挙げられる。 Examples of the cyclic lactone include β-propiolactone, β-butyrolactone, γ-butyrolactone, α-methyl-γ-butyrolactone, β-methyl-γ-butyrolactone, γ-valerolactone, γ-caprolactone, and γ-octano. Preferred are iclactone and α-hydroxy-γ-butyrolactone.
 環を含有しても良いモノケトン化合物としては、例えば、2-ブタノン、3-メチルブタノン、ピナコロン、2-ペンタノン、3-ペンタノン、3-メチル-2-ペンタノン、4-メチル-2-ペンタノン、2-メチル-3-ペンタノン、4,4-ジメチル-2-ペンタノン、2,4-ジメチル-3-ペンタノン、2,2,4,4-テトラメチル-3-ペンタノン、2-ヘキサノン、3-ヘキサノン、5-メチル-3-ヘキサノン、2-ヘプタノン、3-ヘプタノン、4-ヘプタノン、2-メチル-3-ヘプタノン、5-メチル-3-ヘプタノン、2,6-ジメチル-4-ヘプタノン、2-オクタノン、3-オクタノン、2-ノナノン、3-ノナノン、5-ノナノン、2-デカノン、3-デカノン、4-デカノン、5-ヘキセン-2-オン、3-ペンテン-2-オン、シクロペンタノン、2-メチルシクロペンタノン、3-メチルシクロペンタノン、2,2-ジメチルシクロペンタノン、2,4,4-トリメチルシクロペンタノン、シクロヘキサノン、3-メチルシクロヘキサノン、4-メチルシクロヘキサノン、4-エチルシクロヘキサノン、2,2-ジメチルシクロヘキサノン、2,6-ジメチルシクロヘキサノン、2,2,6-トリメチルシクロヘキサノン、シクロヘプタノン、2-メチルシクロヘプタノン、3-メチルシクロヘプタノンが好ましく挙げられる。 Examples of the monoketone compound which may contain a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, 3-methyl-2-pentanone, 4-methyl-2-pentanone, 2 -Methyl-3-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexanone, 3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3-heptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4-heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 3-decanone, 4-decanone, 5-hexen-2-one 3-penten-2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethylcyclopentanone, 2,4,4-trimethylcyclopentanone, cyclohexanone, 3- Methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2-dimethylcyclohexanone, 2,6-dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone, 3-methyl Preferred is cycloheptanone.
 アルキレンカーボネートとしては、例えば、プロピレンカーボネート、ビニレンカーボネート、エチレンカーボネート、ブチレンカーボネートが好ましく挙げられる。
 アルコキシ酢酸アルキルとしては、例えば、酢酸-2-メトキシエチル、酢酸-2-エトキシエチル、酢酸-2-(2-エトキシエトキシ)エチル、酢酸-3-メトキシ-3-メチルブチル、酢酸-1-メトキシ-2-プロピルが好ましく挙げられる。
 ピルビン酸アルキルとしては、例えば、ピルビン酸メチル、ピルビン酸エチル、ピルビン酸プロピルが好ましく挙げられる。
 アミド系溶媒としては、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N-メチル-2-ピロリジノン、1,3-ジメチル-2-イミダゾリジノンが好ましく挙げられる。
 その他、ジメチルスルホキシド、スルホランが好ましく挙げられる。
 上記の中で、更に好適な溶剤として、N-メチルピロリドン(NMP)、γ-ブチロラクトン(GBL)、N,N-ジメチルアセトアミド(DMAc)、1,3-ジメチル-2-イミダゾリジノン(DMI)、N,N-ジメチルホルムアミド(DMF)、シクロペンタノン、シクロヘキサノン、シクロヘプタノンなどが挙げられる。更に好ましくは、γ-ブチロラクトン及びN-メチルピロリドン、シクロペンタノン、シクロヘキサノンである。
 これら溶媒は、単独で用いても2種以上を混合して用いてもよい。
 本発明の感光性樹脂組成物中の全固形分濃度は、一般的には10~40質量%、より好ましくは10~30質量%、更に好ましくは15~30質量%である。
Preferred examples of the alkylene carbonate include propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate.
Examples of alkyl alkoxyacetates include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, 3-methoxy-3-methylbutyl acetate, and 1-methoxy-acetate. 2-propyl is preferred.
Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate, and propyl pyruvate.
Preferred examples of the amide solvent include N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidinone, and 1,3-dimethyl-2-imidazolidinone.
In addition, dimethyl sulfoxide and sulfolane are preferable.
Among the above, N-methylpyrrolidone (NMP), γ-butyrolactone (GBL), N, N-dimethylacetamide (DMAc), 1,3-dimethyl-2-imidazolidinone (DMI) are more preferable solvents. , N, N-dimethylformamide (DMF), cyclopentanone, cyclohexanone, cycloheptanone and the like. More preferred are γ-butyrolactone, N-methylpyrrolidone, cyclopentanone, and cyclohexanone.
These solvents may be used alone or in combination of two or more.
The total solid concentration in the photosensitive resin composition of the present invention is generally 10 to 40% by mass, more preferably 10 to 30% by mass, and still more preferably 15 to 30% by mass.
〔レリーフパターン製造方法〕
 本発明の感光性樹脂組成物を用いて、レリーフパターンを製造する方法としては、(a)本発明の感光性樹脂組成物を適当な基板上にコートし感光性膜を形成し、(b)コートされたこの基板をベーキングし(プリベーク)、(c)活性光線又は放射線で露光し、(d)水性現像剤で現像し、そして(e)硬化することにより、硬化されたレリーフパターンを形成することができる。前記コートされた感光性膜の露光された部分においては、前記一般式(1)における-COについて酸の作用により分解しアルカリ可溶性基が生じ、水性アルカリ現像液で除去するように現像することからポジ型の硬化されたレリーフパターンが得られる。
[Relief pattern manufacturing method]
As a method for producing a relief pattern using the photosensitive resin composition of the present invention, (a) the photosensitive resin composition of the present invention is coated on an appropriate substrate to form a photosensitive film, and (b) The coated substrate is baked (pre-baked), (c) exposed with actinic light or radiation, (d) developed with an aqueous developer, and (e) cured to form a cured relief pattern. be able to. In the exposed part of the coated photosensitive film, —CO 2 R 3 in the general formula (1) is decomposed by the action of an acid to generate an alkali-soluble group, which is developed so as to be removed with an aqueous alkaline developer. Thus, a positive cured relief pattern can be obtained.
 コートされ、露光された基板を、現像に先立って、高温でベーキングすることもできる(ポストエクスポージャーベーク)。また、現像された基板を、硬化前にリンスしてもよい。 The coated and exposed substrate can be baked at a high temperature (post-exposure baking) prior to development. Further, the developed substrate may be rinsed before curing.
 このように、本発明の感光性樹脂組成物により、加熱硬化後の厚みが所定厚み(例えば0.1~30μm)になるように、半導体素子上に塗布し、プリベーク、露光、現像、加熱硬化して半導体装置を製造できる。 As described above, the photosensitive resin composition of the present invention is applied on a semiconductor element so that the thickness after heat curing becomes a predetermined thickness (for example, 0.1 to 30 μm), prebaked, exposed, developed, and heat cured. Thus, a semiconductor device can be manufactured.
 以下、レリーフパターンを製造する方法についてより詳細に説明する。
 本発明の感光性樹脂組成物は、好適な基板上にコートされる。基板は、例えばシリコンウエーハのような半導体材料又はセラミック基材、ガラス、金属又はプラスチックである。コーティング方法には、噴霧コーティング、回転コーティング、オフセット印刷、ローラーコーティング、スクリーン印刷、押し出しコーティング、メニスカスコーティング、カーテンコーティング、及び浸漬コーティングがあるが、これらに限られることはない。
Hereinafter, a method for manufacturing a relief pattern will be described in more detail.
The photosensitive resin composition of the present invention is coated on a suitable substrate. The substrate is for example a semiconductor material such as a silicon wafer or a ceramic substrate, glass, metal or plastic. Coating methods include, but are not limited to, spray coating, spin coating, offset printing, roller coating, screen printing, extrusion coating, meniscus coating, curtain coating, and dip coating.
 該コーティング膜は、残留溶媒を蒸発させるために、約70~150℃の温度で数分から半時間ベーキングされる。引き続いて、得られたフィルムにマスクを介して活性光線又は放射線を露光する。活性光線又は放射線としては、X線、電子ビーム、紫外線、可視光線などが使用し得る。最も好ましい放射線は波長が365nm(i-ライン)又は436nm(g-ライン)を有するものである。 The coating film is baked at a temperature of about 70 to 150 ° C. for several minutes to half an hour in order to evaporate the residual solvent. Subsequently, the resulting film is exposed to actinic rays or radiation through a mask. As the actinic ray or radiation, X-ray, electron beam, ultraviolet ray, visible ray or the like can be used. The most preferred radiation is one having a wavelength of 365 nm (i-line) or 436 nm (g-line).
 活性光線又は放射線への露光に続いて、露光された基板を約70~150℃の温度で加熱することが好ましい。通常数十秒~数分間、所定の温度にて加熱される。本方法は、露光後ベーキングと称される。
 この露光後ベーキングにより、下記スキームのように、前記一般式(1)におけるポリアミック酸エステルからポリアミック酸が生じる。
Following exposure to actinic light or radiation, the exposed substrate is preferably heated at a temperature of about 70-150 ° C. Usually, it is heated at a predetermined temperature for several tens of seconds to several minutes. This method is referred to as post-exposure baking.
By this post-exposure baking, a polyamic acid is produced from the polyamic acid ester in the general formula (1) as shown in the following scheme.
Figure JPOXMLDOC01-appb-C000099
Figure JPOXMLDOC01-appb-C000099
 次いで、該コーティング膜を水性現像剤で現像し、レリーフパターンを得ることができる。水性現像剤としては、無機アルカリ(例えば、水酸化カリウム、水酸化ナトリウム、アンモニア水)、1級アミン(例えば、エチルアミン、n-プロピルアミン)、2級アミン(例えば、ジエチルアミン、ジ-n-プロピルアミン)、3級アミン(例えば、トリエチルアミン)、アルコールアミン(例えば、トリエタノールアミン)、4級アンモニウム塩(例えば、テトラメチルアンモニウムハイドロオキサイド、テトラエチルアンモニウムハイドロオキサイド)、及びこれらの混合物のようなアルカリ溶液が挙げられる。最も好ましい現像剤はテトラメチルアンモニウムハイドロオキサイドを含有するものである。更には、現像剤には適当な量の界面活性剤が添加されてよい。現像は浸漬、噴霧、パドリング、又は他の同様な現像方法によって実施されることができる。 Next, the coating film can be developed with an aqueous developer to obtain a relief pattern. Examples of the aqueous developer include inorganic alkali (eg, potassium hydroxide, sodium hydroxide, aqueous ammonia), primary amine (eg, ethylamine, n-propylamine), secondary amine (eg, diethylamine, di-n-propyl). Amines), tertiary amines (eg, triethylamine), alcohol amines (eg, triethanolamine), quaternary ammonium salts (eg, tetramethylammonium hydroxide, tetraethylammonium hydroxide), and alkaline solutions such as mixtures thereof Is mentioned. The most preferred developer is one containing tetramethylammonium hydroxide. Furthermore, an appropriate amount of a surfactant may be added to the developer. Development can be carried out by dipping, spraying, paddling, or other similar development methods.
 場合によっては、レリーフパターンは脱イオン水を使用してすすぎ洗いしてもよい。次いで、耐熱性の高い最終パターン膜を得るために、下記スキームのように、レリーフパターンを加熱硬化することによりポリアミック酸エステルからポリイミドが生成される。硬化は耐熱性の高いポリイミドを得る為にポリマーのガラス転移温度T以上でのベーキングが好ましい。加熱硬化温度としては約200~400℃が好ましく、250~400℃が特に好ましい。 In some cases, the relief pattern may be rinsed using deionized water. Next, in order to obtain a final pattern film having high heat resistance, polyimide is produced from the polyamic acid ester by heat-curing the relief pattern as shown in the following scheme. For curing, baking at a glass transition temperature Tg or higher of the polymer is preferable in order to obtain a polyimide having high heat resistance. The heat curing temperature is preferably about 200 to 400 ° C, particularly preferably 250 to 400 ° C.
Figure JPOXMLDOC01-appb-C000100
Figure JPOXMLDOC01-appb-C000100
 以下、実施例により本発明を具体的に説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited thereto.
〔GPC測定条件〕
 以降におけるGPC測定は、HPC-8220GPC(東ソー製)、ガードカラム:TSKguardcolumn SuperAW-H、カラム:TSKgel SuperAWM-Hを3本直結し、カラム温度50℃、試料濃度0.5質量%のN-メチル-2-ピロリドン溶液を20μl注入し、溶出溶媒としてN-メチル-2-ピロリドン溶液(LiBr(10mM)及びHPO(10mM)を含む)を毎分0.35mlの流量でフローさせ、RI検出装置にて試料ピークを検出することでおこなった。Mw及びMnは標準ポリスチレンを用いて作製した検量線を用いて計算した。
[GPC measurement conditions]
GPC measurement in the following is performed by directly connecting three HPC-8220GPC (manufactured by Tosoh), guard column: TSKguardcolumn SuperAW-H, column: TSKgel SuperAWM-H, column temperature of 50 ° C., and sample concentration of 0.5 mass%. Inject 20 μl of -2-pyrrolidone solution, and flow N-methyl-2-pyrrolidone solution (containing LiBr (10 mM) and H 3 PO 4 (10 mM)) as an elution solvent at a flow rate of 0.35 ml / min. This was done by detecting the sample peak with a detector. Mw and Mn were calculated using a calibration curve prepared using standard polystyrene.
<樹脂の合成例>
〔P-1の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた5000mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)123.42gを入れ、NMP(N-メチル-2-ピロリドン)2399.4gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)300.00gを添加した。60℃で4時間攪拌し、その後室温(25℃)まで放冷した。次いで無水フタル酸30.27gを添加し、室温で10時間攪拌して無色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.68×10、Mn=0.62×10、Mw/Mn=2.71であった。
<Example of resin synthesis>
[Synthesis of P-1]
Synthesis of polyamic acid In a 5000 mL flask equipped with a thermometer, a stirrer and a nitrogen introduction tube, 123.42 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed, and NMP (N-methyl-2- After dissolving in 2399.4 g of pyrrolidone), 300.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and then allowed to cool to room temperature (25 ° C.). Next, 30.27 g of phthalic anhydride was added and stirred at room temperature for 10 hours to obtain a colorless and transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.68 × 10 4 , Mn = 0.62 × 10 4 , and Mw / Mn = 2.71.
ポリアミック酸エステルの合成
 このポリアミック酸溶液132.01gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP111.0gを加え冷却し、0℃以下でクロロメチルメチルエーテル12.56g、続いてN,N-ジイソプロピルエチルアミン16.12gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1175gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-1)24.6gを得た。得られた樹脂をGPCで分析すると、Mw=2.00×10、Mw/Mn=1.91であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 132.01 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer and a nitrogen introduction tube, and 111.0 g of NMP was added and cooled, and 12.56 g of chloromethyl methyl ether at 0 ° C. or lower. Subsequently, 16.12 g of N, N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1175 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 24.6 g of the desired product (resin P-1) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.00 × 10 4 and Mw / Mn = 1.91. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-2の合成〕
 P-1と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液132.01gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP111.0gを加え冷却し、0℃以下でクロロメチルメチルエーテル5.02g、続いてN,N-ジイソプロピルエチルアミン8.06gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1175gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-2)19.3gを得た。得られた樹脂をGPCで分析すると、Mw=1.88×10、Mw/Mn=1.68であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ72%であった。
[Synthesis of P-2]
A polyamic acid was synthesized in the same manner as P-1. 132.01 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 111.0 g of NMP was added and cooled. 8.06 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1175 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 19.3 g of the desired product (resin P-2) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 1.88 × 10 4 and Mw / Mn = 1.68. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 72%.
〔P-3の合成〕
 P-1と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液142.26gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP70.37gを加え冷却し、0℃以下でクロロメチルエチルエーテル15.91g、続いてN,N-ジイソプロピルエチルアミン17.39gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1267gに加え、析出固体を濾取、乾燥し、白色固体の目的物
(樹脂P-3)23.6gを得た。得られた樹脂をGPCで分析すると、Mw=2.09×10、Mw/Mn=1.73であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ96%であった。
[Synthesis of P-3]
A polyamic acid was synthesized in the same manner as P-1. 142.26 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 70.37 g of NMP was added and cooled, and 15.91 g of chloromethyl ethyl ether at 0 ° C. or lower, followed by N, 17.39 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 23.6 g of the desired product (resin P-3) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.09 × 10 4 and Mw / Mn = 1.73. The solid was dissolved in deuterated DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 96%.
〔P-7の合成〕
 P-1と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液132.01gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP111.0gを加え冷却し、0℃以下でクロロメチルシクロヘキシルエーテル23.18g、続いてN,N-ジイソプロピルエチルアミン16.12gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1175gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-7)24.8gを得た。得られた樹脂をGPCで分析すると、Mw=2.36×10、Mw/Mn=1.72であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-7]
A polyamic acid was synthesized in the same manner as P-1. 132.01 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 111.0 g of NMP was added and cooled. 16.12 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1175 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 24.8 g of the desired product (resin P-7) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.36 × 10 4 and Mw / Mn = 1.72. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-8の合成〕
 P-1と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液132.01gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP111.0gを加え冷却し、0℃以下でクロロメチルシクロヘキシルエーテル9.27g、続いてN,N-ジイソプロピルエチルアミン8.06gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1175gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-8)20.2gを得た。得られた樹脂をGPCで分析すると、Mw=2.13×10、Mw/Mn=1.59であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ64%であった。
[Synthesis of P-8]
A polyamic acid was synthesized in the same manner as P-1. 132.01 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 111.0 g of NMP was added and cooled. At 0 ° C. or lower, 9.27 g of chloromethylcyclohexyl ether was added, followed by N, 8.06 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1175 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.2 g of the desired product (resin P-8) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.13 × 10 4 and Mw / Mn = 1.59. The solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 64%.
〔P-11の合成〕
 P-1と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液106.30gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP52.59gを加え冷却し、0℃以下で2-(クロロメトキシ)エチルトリメチルシラン20.96g、続いてN,N-ジイソプロピルエチルアミン13.00gを添加した。0℃以下で4時間反応させた後、反応液をメタノール947gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-11)13.5gを得た。得られた樹脂をGPCで分析すると、Mw=1.58×10、Mw/Mn=1.55であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ73%であった。
[Synthesis of P-11]
A polyamic acid was synthesized in the same manner as P-1. 106.30 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 52.59 g of NMP was added and cooled, and 20.96 g of 2- (chloromethoxy) ethyltrimethylsilane at 0 ° C or lower Subsequently, 13.00 g of N, N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 947 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 13.5 g of the desired product (resin P-11) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 1.58 × 10 4 and Mw / Mn = 1.55. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 73%.
〔P-16の合成〕
 パラアルデヒド48.11g、シクロヘキサンエタノール140.0g、10-カンファースルホン酸1.27gをヘキサン150gに加え、ディーン・スターク装置にて5時間還流させた。溶液を飽和炭酸水素ナトリウム溶液で2回洗浄、水2回で順次洗浄し、有機層を硫酸ナトリウムによって乾燥して、減圧下にて濃縮し透明溶液157gを得た。これに塩化アセチル34.3gを加え50℃で5時間反応させた後、減圧下にて濃縮し透明液体178gを得た。重クロロホルムに溶解してH-NMRスペクトルを測定し、シクロヘキシルエチル 1-クロロエチルエーテルの含有率は31質量%である事が分かった。
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液105.61gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP52.23gを加え冷却し、0℃以下で上記の31質量%溶液76.75g、続いてN,N-ジイソプロピルエチルアミン26.87gを添加した。0℃以下で4時間反応させた後、反応液をアセトニトリル940gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-16)16.5gを得た。得られた樹脂をGPCで分析すると、Mw=2.29×10、Mw/Mn=1.75であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ69%であった。
[Synthesis of P-16]
48.11 g of paraaldehyde, 140.0 g of cyclohexaneethanol, and 1.27 g of 10-camphorsulfonic acid were added to 150 g of hexane, and the mixture was refluxed for 5 hours using a Dean-Stark apparatus. The solution was washed twice with a saturated sodium hydrogen carbonate solution and twice with water, and the organic layer was dried over sodium sulfate and concentrated under reduced pressure to obtain 157 g of a transparent solution. 34.3 g of acetyl chloride was added to this and reacted at 50 ° C. for 5 hours, and then concentrated under reduced pressure to obtain 178 g of a transparent liquid. 1 H-NMR spectrum was measured after dissolving in deuterated chloroform, and it was found that the content of cyclohexylethyl 1-chloroethyl ether was 31% by mass.
Polyamic acid was synthesized in the same manner as P-1, and 105.61 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 52.23 g of NMP was added and cooled to 0 ° C. or lower. Was added 76.75 g of the above 31% by weight solution followed by 26.87 g of N, N-diisopropylethylamine. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 940 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 16.5 g of the desired product (resin P-16) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.29 × 10 4 and Mw / Mn = 1.75. The solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 69%.
〔P-19の合成〕
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液106.30gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP52.59gを加え、(2‐フェノキシエチル)ビニルエーテル 20.64g、10-カンファースルホン酸0.97gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル947gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-19)18.9gを得た。得られた樹脂をGPCで分析すると、Mw=2.50×10、Mw/Mn=1.71であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-19]
A polyamic acid was synthesized in the same manner as P-1, and 106.30 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 52.59 g of NMP was added, (2-phenoxyethyl). ) 20.64 g of vinyl ether and 0.97 g of 10-camphorsulfonic acid were sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 947 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 18.9 g of the desired product (resin P-19) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.50 × 10 4 and Mw / Mn = 1.71. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-22の合成〕
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液105.59gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP52.23gを加え、(1-(4-tert-オクチル-フェノキシ)-2-ビニルオキシ-エタン34.43g、10-カンファースルホン酸0.96gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル940gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-22)22.1gを得た。得られた樹脂をGPCで分析すると、Mw=2.84×10、Mw/Mn=1.71であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-22]
Polyamic acid was synthesized in the same manner as P-1, and 105.59 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 52.23 g of NMP was added, and (1- (4 -Tert-octyl-phenoxy) -2-vinyloxy-ethane (34.43 g) and 10-camphorsulfonic acid (0.96 g) were sequentially added, and the mixture was reacted at 25 ° C. for 5 hours. The product was collected by filtration and dried to obtain 22.1 g of the desired product (resin P-22) as a white solid, and the obtained resin was analyzed by GPC, whereby Mw = 2.84 × 10 4 and Mw / Mn = 1. It was 71. the solid was dissolved in deuterated DMSO to measure 1 H-NMR spectrum, 1 was calculated protective index from the peak integration ratio of carboxylic acid esters and carboxylic acid It was 0%.
〔P-26の合成〕
 エチレングリコールモノビニルエーテル24.93g、イソシアン酸シクロヘキシル35.42gを脱水酢酸エチル150mlに加え、70℃6時間攪拌した。減圧下濃縮し、冷却して結晶を析出させた。結晶をろ過し、冷ヘキサンでリンスし、白色針状結晶として下記構造のビニルエーテル37.8gを得た。
[Synthesis of P-26]
24.93 g of ethylene glycol monovinyl ether and 35.42 g of cyclohexyl isocyanate were added to 150 ml of dehydrated ethyl acetate and stirred at 70 ° C. for 6 hours. Concentrated under reduced pressure and cooled to precipitate crystals. The crystals were filtered and rinsed with cold hexane to obtain 37.8 g of vinyl ether having the following structure as white needle crystals.
Figure JPOXMLDOC01-appb-C000101
Figure JPOXMLDOC01-appb-C000101
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液79.19gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP39.18gを加え、上記ビニルエーテル19.92g、10-カンファースルホン酸 0.72gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル705gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-26)15.1gを得た。得られた樹脂をGPCで分析すると、Mw=2.62×10、Mw/Mn=1.76であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 Polyamic acid was synthesized in the same manner as P-1, and 79.19 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 39.18 g of NMP was added, and 19.92 g of the vinyl ether was added. 0.72 g of 10-camphorsulfonic acid was sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 705 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 15.1 g of the desired product (resin P-26) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.62 × 10 4 and Mw / Mn = 1.76. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-27の合成〕
 エチレングリコールモノビニルエーテル29.00g、イソシアン酸フェニル39.20gを脱水酢酸エチル150mlに加え、70℃6時間攪拌した。減圧下濃縮(100℃、0.1kPa)し、オイル状の下記構造のビニルエーテル60.2gを得た。
[Synthesis of P-27]
Ethylene glycol monovinyl ether 29.00 g and phenyl isocyanate 39.20 g were added to dehydrated ethyl acetate 150 ml and stirred at 70 ° C. for 6 hours. Concentration under reduced pressure (100 ° C., 0.1 kPa) gave 60.2 g of an oily vinyl ether having the following structure.
Figure JPOXMLDOC01-appb-C000102
Figure JPOXMLDOC01-appb-C000102
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液79.19gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP39.18gを加え、上記ビニルエーテル19.36g、10-カンファースルホン酸0.72gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル705gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-26)17.6gを得た。得られた樹脂をGPCで分析すると、Mw=2.89×10、Mw/Mn=1.95であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 Polyamic acid was synthesized in the same manner as P-1, and 79.19 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 39.18 g of NMP was added, and 19.36 g of the vinyl ether was added. 0.72 g of 10-camphorsulfonic acid was added sequentially. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 705 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 17.6 g of the desired product (resin P-26) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.89 × 10 4 and Mw / Mn = 1.95. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-29の合成〕
 温度計、攪拌器、窒素導入管を備えた300mLフラスコ中にフェニルアセトアルデヒドジメチルアセタール100g、塩化アセチル54.3gを加え50℃で5時間反応させた後、減圧下にて濃縮し、下記構造の透明液体を得た。
[Synthesis of P-29]
In a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen inlet tube, 100 g of phenylacetaldehyde dimethyl acetal and 54.3 g of acetyl chloride were added, reacted at 50 ° C. for 5 hours, concentrated under reduced pressure, and transparent with the following structure A liquid was obtained.
Figure JPOXMLDOC01-appb-C000103
Figure JPOXMLDOC01-appb-C000103
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液132.8gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP65.68gを加え冷却し、0℃以下で上記溶液25.58g、続いてN,N-ジイソプロピルエチルアミン23.25gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1182gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-29)29.19gを得た。得られた樹脂をGPCで分析すると、Mw=2.49×10、Mw/Mn=1.65であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ97%であった。 Polyamic acid was synthesized in the same manner as P-1, and 132.8 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 65.68 g of NMP was added and cooled to 0 ° C. or lower. 25.58 g of the above solution was added followed by 23.25 g of N, N-diisopropylethylamine. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1182 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 29.19 g of the desired product (resin P-29) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.49 × 10 4 and Mw / Mn = 1.65. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 97%.
〔P-31の合成〕
 温度計、攪拌器、窒素導入管を備えた2000mLフラスコ中に1-エチルシクロペンタノール58.2g、乾燥THF250mlを加え、-5℃以下でn-ブチルリチウム(2,6Mヘキサン)を184ml滴下し、-2℃で2時間攪拌した。これに3,3’,4,4’-ビフェニルテトラカルボン酸無水物50.0gを添加し室温で1時間攪拌し、NMPを200ml追加して更に室温で3時間攪拌し、50℃で1時間攪拌した。放冷し、希塩酸で中和後、酢酸エチル600mlで抽出し、有機層を飽和食塩水で2回、水2回で順次洗浄し、有機層を硫酸ナトリウムで乾燥し、減圧下にて濃縮して下記構造のジカルボン酸32.3gを得た。
[Synthesis of P-31]
In a 2000 mL flask equipped with a thermometer, stirrer, and nitrogen inlet tube, add 58.2 g of 1-ethylcyclopentanol and 250 ml of dry THF, and add 184 ml of n-butyllithium (2,6M hexane) dropwise at -5 ° C or lower. The mixture was stirred at -2 ° C for 2 hours. To this was added 50.0 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride, and the mixture was stirred at room temperature for 1 hour, 200 ml of NMP was added, and the mixture was further stirred at room temperature for 3 hours and then at 50 ° C. for 1 hour. Stir. The mixture was allowed to cool, neutralized with dilute hydrochloric acid, and extracted with 600 ml of ethyl acetate. The organic layer was washed twice with saturated brine and twice with water, and the organic layer was dried over sodium sulfate and concentrated under reduced pressure. As a result, 32.3 g of a dicarboxylic acid having the following structure was obtained.
Figure JPOXMLDOC01-appb-C000104
Figure JPOXMLDOC01-appb-C000104
 このジカルボン酸16.00gを温度計、攪拌器、窒素導入管を備えた100mLフラスコ中に加え、NMP58.28gを加え冷却し、0℃以下でジフェニル(2,3-ジヒドロ-2-チオキソ-3-ベンゾキサゾリル)ホスホナート(DBOP)27.61g、N,N-ジイソプロピルエチルアミン11.63g、trans-1,4-シクロヘキサンジアミン3.43gを順次添加した。0℃以下で1時間攪拌した後、室温で一昼夜攪拌した。反応液をメタノール700mlに加え、析出固体を濾取し、更にアセトニトリル1000mlでリスラリーした。固体をNMP100mlに溶解し、無水フタル酸を0.89g加え50℃で1時間攪拌した。反応液をメタノール800ml/水200mlに加え、乾燥し、白色固体の目的物(樹脂P-31)15.6gを得た。得られた樹脂をGPCで分析すると、Mw=0.90×10、Mw/Mn=2.03であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 16.00 g of this dicarboxylic acid was added to a 100 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 58.28 g of NMP was added and cooled. Diphenyl (2,3-dihydro-2-thioxo-3 -Benzoxazolyl) phosphonate (DBOP) 27.61 g, N, N-diisopropylethylamine 11.63 g, and trans-1,4-cyclohexanediamine 3.43 g were sequentially added. After stirring at 0 ° C. or lower for 1 hour, the mixture was stirred overnight at room temperature. The reaction solution was added to 700 ml of methanol, and the precipitated solid was collected by filtration and further reslurried with 1000 ml of acetonitrile. The solid was dissolved in 100 ml of NMP, 0.89 g of phthalic anhydride was added, and the mixture was stirred at 50 ° C. for 1 hour. The reaction solution was added to 800 ml of methanol / 200 ml of water and dried to obtain 15.6 g of the desired product (resin P-31) as a white solid. When the obtained resin was analyzed by GPC, Mw = 0.90 × 10 4 and Mw / Mn = 2.03. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-33の合成〕
 温度計、攪拌器、窒素導入管を備えた2000mLフラスコ中に2-エチル-2-アダマンタノール94.4g、乾燥THF250mlを加え、-5℃以下でn-ブチルリチウム(2,6Mヘキサン)を192ml滴下し、5℃で1時間攪拌した。これに3,3’,4,4’-ビフェニルテトラカルボン酸無水物70.0g、NMP280gを添加し室温で2時間攪拌し、40℃で1時間攪拌した。放冷し、1M-塩酸600mlで中和後、酢酸エチル1000mlで抽出し、有機層を飽和炭食塩水で2回、水2回で順次洗浄した。1M-NaOH500mlを加え、水層を抽出し、酢酸エチル300mlで洗浄した。水層を1M-塩酸500mlで中和し、酢酸エチル500mlで抽出し、有機層を飽和炭食塩水で2回、水2回で順次洗浄した。硫酸ナトリウムで乾燥し、減圧下にて濃縮して下記構造のジカルボン酸76.4gを得た。
[Synthesis of P-33]
In a 2000 mL flask equipped with a thermometer, stirrer and nitrogen inlet tube, 94.4 g of 2-ethyl-2-adamantanol and 250 ml of dry THF were added. The solution was added dropwise and stirred at 5 ° C. for 1 hour. To this, 70.0 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride and 280 g of NMP were added and stirred at room temperature for 2 hours and then at 40 ° C. for 1 hour. The mixture was allowed to cool, neutralized with 600 ml of 1M hydrochloric acid, extracted with 1000 ml of ethyl acetate, and the organic layer was washed successively with saturated brine twice and water twice. 500 ml of 1M NaOH was added, and the aqueous layer was extracted and washed with 300 ml of ethyl acetate. The aqueous layer was neutralized with 500 ml of 1M-hydrochloric acid and extracted with 500 ml of ethyl acetate, and the organic layer was washed successively with saturated brine twice and with water twice. The extract was dried over sodium sulfate and concentrated under reduced pressure to obtain 76.4 g of a dicarboxylic acid having the following structure.
Figure JPOXMLDOC01-appb-C000105
Figure JPOXMLDOC01-appb-C000105
 このジカルボン酸15.00gを温度計、攪拌器、窒素導入管を備えた100mLフラスコ中に加え、NMP52.69gを加え冷却し、0℃以下でジフェニル(2,3-ジヒドロ-2-チオキソ-3-ベンゾキサゾリル)ホスホナート(DBOP)20.66g、N,N-ジイソプロピルエチルアミン8.70g、trans-1,4-シクロヘキサンジアミン2.56gを順次添加した。0℃以下で1時間攪拌した後、室温で4時間攪拌した。続いて無水フタル酸を0.67g加え室温で1時間攪拌した。反応液をメタノール1200mlに加え、析出固体を濾取し、更にメタノール1000mlでリスラリーした。固体を乾燥し、白色固体の目的物(樹脂P-33)14.7gを得た。得られた樹脂をGPCで分析すると、Mw=0.82×10、Mw/Mn=1.64であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 15.00 g of this dicarboxylic acid was added to a 100 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 52.69 g of NMP was added and cooled, and diphenyl (2,3-dihydro-2-thioxo-3 was cooled below 0 ° C. -Benzoxazolyl) phosphonate (DBOP) 20.66 g, N, N-diisopropylethylamine 8.70 g, and trans-1,4-cyclohexanediamine 2.56 g were sequentially added. The mixture was stirred at 0 ° C. or lower for 1 hour and then stirred at room temperature for 4 hours. Subsequently, 0.67 g of phthalic anhydride was added and stirred at room temperature for 1 hour. The reaction solution was added to 1200 ml of methanol, and the precipitated solid was collected by filtration and reslurried with 1000 ml of methanol. The solid was dried to obtain 14.7 g of the desired product (resin P-33) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 0.82 × 10 4 and Mw / Mn = 1.64. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-34の合成〕
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液142.3gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP70.38gを加え、0℃以下でブロモ酢酸tert-ブチル 31.32g、N,N-ジイソプロピルエチルアミン16.60gを添加した。室温で7時間反応させた後、反応液をメタノール1267gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-34)34.07gを得た。得られた樹脂をGPCで分析すると、Mw=2.38×10、Mw/Mn=2.68であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-34]
The polyamic acid was synthesized in the same manner as P-1, and 142.3 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 70.38 g of NMP was added, and bromo at 0 ° C. or lower. 31.32 g of tert-butyl acetate and 16.60 g of N, N-diisopropylethylamine were added. After reacting at room temperature for 7 hours, the reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 34.07 g of the desired product (resin P-34) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.38 × 10 4 and Mw / Mn = 2.68. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-36の合成〕
 温度計、攪拌器、窒素導入管を備えた1000mLフラスコ中に、ブロモアセチルブロミド25g及び脱水NMP475gを加え、冷却しながらDBUを50g加えた。冷却し10℃以下で1-エチルシクロペンタノール110.47gを添加し、その後室温で4時間反応させた。水600mlを加え、酢酸エチル500mlで2回抽出し、有機層を飽和炭酸水素ナトリウム溶液で2回、水2回で順次洗浄し、有機層を硫酸マグネシウムで乾燥し、減圧下にて濃縮して下記構造の褐色オイルを得た。
[Synthesis of P-36]
In a 1000 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 25 g of bromoacetyl bromide and 475 g of dehydrated NMP were added, and 50 g of DBU was added while cooling. The mixture was cooled and 110.47 g of 1-ethylcyclopentanol was added at 10 ° C. or lower, and then reacted at room temperature for 4 hours. Add 600 ml of water, extract twice with 500 ml of ethyl acetate, wash the organic layer with saturated sodium bicarbonate solution twice and with water twice, dry the organic layer with magnesium sulfate and concentrate under reduced pressure. A brown oil having the following structure was obtained.
Figure JPOXMLDOC01-appb-C000106
Figure JPOXMLDOC01-appb-C000106
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液142.3gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP70.38gを加え、0℃以下で上記ハライド37.76g、N,N-ジイソプロピルエチルアミン16.60gを添加した。室温で7時間反応させた後、反応液をメタノール1267gに加え、析出固体を濾取、乾燥し、茶色固体の目的物(樹脂P-36)36.97gを得た。得られた樹脂をGPCで分析すると、Mw=3.64×10、Mw/Mn=2.51であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 A polyamic acid was synthesized in the same manner as P-1, and 142.3 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 70.38 g of NMP was added. 37.76 g of halide and 16.60 g of N, N-diisopropylethylamine were added. After reacting at room temperature for 7 hours, the reaction solution was added to 1267 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 36.97 g of the desired product (resin P-36) as a brown solid. When the obtained resin was analyzed by GPC, Mw = 3.64 × 10 4 and Mw / Mn = 2.51. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-39の合成〕
 温度計、攪拌器、窒素導入管を備えた2000mLフラスコ中に、ブロモアセチルブロミド111.9g及び脱水NMP360gを加え、冷却しながらDBUを50.7g加えた。10℃以下で2-エチル-2-アダマンタノール40.0gを添加し、その後室温で4時間反応させた。水600mlを加え、酢酸エチル500mlで2回抽出し、有機層をを飽和炭酸水素ナトリウム溶液で2回、水2回で順次洗浄し、有機層を硫酸マグネシウムで乾燥し、減圧下にて濃縮して下記構造の褐色オイルを得た。
[Synthesis of P-39]
In a 2000 mL flask equipped with a thermometer, a stirrer, and a nitrogen inlet tube, 111.9 g of bromoacetyl bromide and 360 g of dehydrated NMP were added, and 50.7 g of DBU was added while cooling. At 10 ° C. or less, 40.0 g of 2-ethyl-2-adamantanol was added, and then reacted at room temperature for 4 hours. Add 600 ml of water, extract twice with 500 ml of ethyl acetate, wash the organic layer with saturated sodium bicarbonate solution twice and water twice, dry the organic layer with magnesium sulfate and concentrate under reduced pressure. As a result, a brown oil having the following structure was obtained.
Figure JPOXMLDOC01-appb-C000107
Figure JPOXMLDOC01-appb-C000107
 P-1と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液133.10gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP65.87gを加え、0℃以下で上記ハライド36.46g、N,N-ジイソプロピルエチルアミン15.65gを添加した。室温で8時間反応させた後、反応液をメタノール1186gに加え、析出固体を濾取、乾燥し、茶色固体の目的物(樹脂P-39)41.21gを得た。得られた樹脂をGPCで分析すると、Mw=3.97×10、Mw/Mn=2.59であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。 Polyamic acid was synthesized in the same manner as P-1, and 133.10 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 65.87 g of NMP was added, and the above was performed at 0 ° C. or lower. 36.46 g of halide and 15.65 g of N, N-diisopropylethylamine were added. After reacting at room temperature for 8 hours, the reaction solution was added to 1186 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 41.21 g of the desired product (resin P-39) as a brown solid. When the obtained resin was analyzed by GPC, it was Mw = 3.97 × 10 4 and Mw / Mn = 2.59. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-41の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた5000mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)64.04gを入れ、NMP(N-メチル-2-ピロリドン)2427.2gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)275.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)89.29gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸27.69gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.88×10、Mn=0.74×10、Mw/Mn=2.55であった。
[Synthesis of P-41]
Synthesis of polyamic acid In a 5000 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 64,04 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed, and NMP (N-methyl-2- After dissolving in 2427.2 g of pyrrolidone), 275.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Subsequently, 89.29 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) was added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 27.69 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.88 × 10 4 , Mn = 0.74 × 10 4 , and Mw / Mn = 2.55.
ポリアミック酸エステルの合成
 このポリアミック酸溶液132.20gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP65.47gを加え冷却し、0℃以下でクロロメチルメチルエーテル11.39g、続いてN,N-ジイソプロピルエチルアミン14.62gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1178gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-41)25.9gを得た。得られた樹脂をGPCで分析すると、Mw=2.45×10、Mw/Mn=1.68であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 132.20 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 65.47 g of NMP was added and cooled, and 11.39 g of chloromethyl methyl ether at 0 ° C. or lower. Subsequently, 14.62 g of N, N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1178 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 25.9 g of the desired product (resin P-41) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.45 × 10 4 and Mw / Mn = 1.68. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-42の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液132.20gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP65.47gを加え冷却し、0℃以下でクロロメチルメチルエーテル3.80g、続いてN,N-ジイソプロピルエチルアミン6.09gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1178gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-42)18.8gを得た。得られた樹脂をGPCで分析すると、Mw=2.20×10、Mw/Mn=1.58であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ52%であった。
[Synthesis of P-42]
A polyamic acid was synthesized in the same manner as P-41. 132.20 g of this polyamic acid solution is added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 65.47 g of NMP is added and cooled, and below 3.degree. 6.09 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1178 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 18.8 g of the desired product (resin P-42) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.20 × 10 4 and Mw / Mn = 1.58. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and it was 52%.
〔P-45の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液136.30gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP67.49gを加え冷却し、0℃以下でクロロメチルオクチルエーテル24.87g、続いてN,N-ジイソプロピルエチルアミン14.39gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1215gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-45)32.1gを得た。得られた樹脂をGPCで分析すると、Mw=2.83×10、Mw/Mn=1.76であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
[Synthesis of P-45]
A polyamic acid was synthesized in the same manner as P-41. 136.30 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 67.49 g of NMP was added and cooled. 14.39 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1215 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 32.1 g of the desired product (resin P-45) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.83 × 10 4 and Mw / Mn = 1.76. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-47の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液146.80gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP72.69gを加え冷却し、0℃以下でクロロメチルシクロヘキシルエーテル22.28g、続いてN,N-ジイソプロピルエチルアミン19.37gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1308gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-47)31.8gを得た。得られた樹脂をGPCで分析すると、Mw=2.50×10、Mw/Mn=1.85であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-47]
A polyamic acid was synthesized in the same manner as P-41. Add 146.80 g of this polyamic acid solution to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, add 72.69 g of NMP, cool it, and cool it to 0 ° C. or less, 22.28 g of chloromethylcyclohexyl ether, followed by N, 19.37 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1308 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 31.8 g of the desired product (resin P-47) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.50 × 10 4 and Mw / Mn = 1.85. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-49の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液157.30gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP77.88gを加え冷却し、0℃以下でクロロメチルシクロヘキシルエーテル9.55g、続いてN,N-ジイソプロピルエチルアミン8.30gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1402gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-49)26.19gを得た。得られた樹脂をGPCで分析すると、Mw=2.22×10、Mw/Mn=1.94であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ63%であった。
[Synthesis of P-49]
A polyamic acid was synthesized in the same manner as P-41. 157.30 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 77.88 g of NMP was added and cooled. 8.30 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1402 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.19 g of the desired product (resin P-49) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.22 × 10 4 and Mw / Mn = 1.94. The solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 63%.
〔P-50の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液132.20gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP65.47gを加え冷却し、0℃以下でクロロメチルベンジルエーテル22.15g、続いてN,N-ジイソプロピルエチルアミン14.62gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1178gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-50)26.1gを得た。得られた樹脂をGPCで分析すると、Mw=2.59×10、Mw/Mn=1.83であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-50]
A polyamic acid was synthesized in the same manner as P-41. 132.20 g of this polyamic acid solution was added to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 65.47 g of NMP was added and cooled, and below 22.degree. 14.62 g of N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1178 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.1 g of the desired product (resin P-50) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.59 × 10 4 and Mw / Mn = 1.83. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-52の合成〕
 P-41と同様にポリアミック酸の合成を行なった。このポリアミック酸溶液117.51gを温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に加え、NMP58.19gを加え冷却し、0℃以下で2-メトキシエトキシメチルクロリド15.66g、続いてN,N-ジイソプロピルエチルアミン13.00gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1047gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-52)20.5gを得た。得られた樹脂をGPCで分析すると、Mw=3.02×10、Mw/Mn=1.59であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-52]
A polyamic acid was synthesized in the same manner as P-41. Add 117.51 g of this polyamic acid solution to a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, add 58.19 g of NMP, cool it, and cool it to 0 ° C. or less, 15.66 g of 2-methoxyethoxymethyl chloride, and then 13.00 g of N, N-diisopropylethylamine was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1047 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.5 g of the desired product (resin P-52) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 3.02 × 10 4 and Mw / Mn = 1.59. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-55の合成〕
 2-クロロエチルビニルエーテル106.55gをナトリウムメトキシド28%メタノール溶液385.86gに加え、12時間還流した。ヘキサン200mlを加え、溶液を飽和食塩水で3回洗浄、水2回で順次洗浄し、有機層を硫酸ナトリウムによって乾燥して、減圧下にて濃縮し無色透明オイルとして(2‐メトキシエチル)ビニルエーテルを得た。
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液88.13gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP74.20gを加え、上記ビニルエーテル9.63g、10-カンファースルホン酸 0.73gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル786gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-55)12.6gを得た。得られた樹脂をGPCで分析すると、Mw=2.96×10、Mw/Mn=1.82であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
〔P-74の合成〕
 温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)5.61g及びtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)4.27gを入れ、N-メチル-2-ピロリドン132.24gに溶解した後、氷冷下2℃でピロメリット酸無水物6.40g及び(1R,2S,4S,5R)‐シクロヘキサンテトラカルボン酸二無水物(岩谷瓦斯(株)製、PMDA-HS)7.06gを添加した。4℃で1時間、次いで25℃で24時間反応させた後、無水フタル酸1.77gを添加し、室温で2時間攪拌した。このポリアミック酸溶液にNMP77.79gを加え、(2‐メトキシエチル)ビニルエーテル20.469g、10-カンファースルホン酸 1.55gを順次添加した。25℃で5時間反応させた後、反応液をアセトニトリル1400gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-74)31.6gを得た。得られた樹脂をGPCで分析すると、Mw=3.26×10、Mw/Mn=1.90であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-55]
106.55 g of 2-chloroethyl vinyl ether was added to 385.86 g of a 28% sodium methoxide methanol solution and refluxed for 12 hours. 200 ml of hexane was added, and the solution was washed three times with saturated saline and then twice with water. The organic layer was dried over sodium sulfate and concentrated under reduced pressure to give (2-methoxyethyl) vinyl ether as a colorless transparent oil. Got.
Polyamic acid was synthesized in the same manner as P-41, and 88.13 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen inlet tube, 74.20 g of NMP was added, and 9.63 g of the vinyl ether was added. 0.73 g of 10-camphorsulfonic acid was sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 786 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 12.6 g of the desired product (resin P-55) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.96 × 10 4 and Mw / Mn = 1.82. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
[Synthesis of P-74]
In a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 5.61 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and trans-1,4-cyclohexane 4.27 g of diamine (manufactured by Iwatani Gas Co., Ltd.) was added and dissolved in 132.24 g of N-methyl-2-pyrrolidone, and then 6.40 g of pyromellitic anhydride and (1R, 2S, 7.06 g of 4S, 5R) -cyclohexanetetracarboxylic dianhydride (manufactured by Iwatani Gas Co., Ltd., PMDA-HS) was added. After reacting at 4 ° C. for 1 hour and then at 25 ° C. for 24 hours, 1.77 g of phthalic anhydride was added and stirred at room temperature for 2 hours. 77.79 g of NMP was added to this polyamic acid solution, and 20.469 g of (2-methoxyethyl) vinyl ether and 1.55 g of 10-camphorsulfonic acid were sequentially added. After reacting at 25 ° C. for 5 hours, the reaction solution was added to 1400 g of acetonitrile, and the precipitated solid was collected by filtration and dried to obtain 31.6 g of the desired product (resin P-74) as a white solid. When the obtained resin was analyzed by GPC, Mw = 3.26 × 10 4 and Mw / Mn = 1.90. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-93の合成〕
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)6.85gを入れ、N-メチル-2-ピロリドン182.71gに溶解した後、室温で(1R,2S,4S,5R)‐シクロヘキサンテトラカルボン酸二無水物(岩谷瓦斯(株)製、PMDA-HS)13.45gを添加した。室温で1時間、次いで60℃で4時間反応させた。得られた溶液をGPCで分析すると、Mw=5.53×10、Mn=2.71×10、Mw/Mn=2.04であった。この溶液に無水フタル酸0.89gを添加し、室温で2時間攪拌した後冷却し、0℃以下でクロロメチルメチルエーテル15.22g、続いてN,N-ジイソプロピルエチルアミン19.54gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1218gに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-93)26.1gを得た。得られた樹脂をGPCで分析すると、Mw=6.26×10、Mw/Mn=2.11であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of P-93]
Into a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 6.85 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed and dissolved in 182.71 g of N-methyl-2-pyrrolidone. After that, 13.45 g of (1R, 2S, 4S, 5R) -cyclohexanetetracarboxylic dianhydride (manufactured by Iwatani Gas Co., Ltd., PMDA-HS) was added at room temperature. The reaction was carried out at room temperature for 1 hour and then at 60 ° C. for 4 hours. When the obtained solution was analyzed by GPC, it was Mw = 5.53 × 10 4 , Mn = 2.71 × 10 4 , and Mw / Mn = 2.04. To this solution was added 0.89 g of phthalic anhydride, and the mixture was stirred at room temperature for 2 hours and then cooled. At 0 ° C. or lower, 15.22 g of chloromethyl methyl ether was added, followed by 19.54 g of N, N-diisopropylethylamine. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1218 g of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.1 g of the desired product (resin P-93) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 6.26 × 10 4 and Mw / Mn = 2.11. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔R3の合成〕
ポリアミック酸(ポリイミド前駆体)の合成
 温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)8.49gを入れ、N-メチル-2-ピロリドン108.75gに溶解した後、氷冷下2℃で(1R,2S,4S,5R)‐シクロヘキサンテトラカルボン酸二無水物(岩谷瓦斯(株)製、PMDA-HS)10.70gを添加した。4℃で1時間、次いで25℃で12時間反応させた後、無水フタル酸1.62gを添加し、室温で2時間攪拌した。このポリアミック酸溶液にNMP109gを加え冷却し、0℃以下でクロロメチルメチルエーテル10.10g、続いてN,N-ジイソプロピルエチルアミン12.97gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1500mlに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂R3)22.3gを得た。得られた樹脂をGPCで分析すると、Mw=1.93×10、Mw/Mn=1.82であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
[Synthesis of R3]
Synthesis of polyamic acid (polyimide precursor) 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) in a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube. 49 g was added and dissolved in 108.75 g of N-methyl-2-pyrrolidone, and then (1R, 2S, 4S, 5R) -cyclohexanetetracarboxylic dianhydride (Iwatani Gas Co., Ltd. PMDA-HS) 10.70 g was added. After reacting at 4 ° C. for 1 hour and then at 25 ° C. for 12 hours, 1.62 g of phthalic anhydride was added and stirred at room temperature for 2 hours. To this polyamic acid solution, 109 g of NMP was added and cooled, and 10.10 g of chloromethyl methyl ether was added at 0 ° C. or lower, followed by 12.97 g of N, N-diisopropylethylamine. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1500 ml of methanol, and the precipitated solid was collected by filtration and dried to obtain 22.3 g of the desired product (resin R3) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 1.93 × 10 4 and Mw / Mn = 1.82. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-110の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた100mLフラスコ中に1,1,2-トリメトキシエタン48.0g、塩化アセチル29.8g、塩化亜鉛10mgを加え室温で8時間反応させ、下記構造(b5-1)で表される化合物を透明液体として76.3g得た。
[Synthesis of P-110]
In a 100 mL flask equipped with a thermometer, a stirrer and a calcium chloride tube, 48.0 g of 1,1,2-trimethoxyethane, 29.8 g of acetyl chloride and 10 mg of zinc chloride were added and reacted at room temperature for 8 hours. 76.3 g of the compound represented by b5-1) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000108
Figure JPOXMLDOC01-appb-C000108
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン17.71g、続いて上記構造(b5-1)で表される化合物についての前記透明液体27.69gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-110)22.71gを得た。得られた樹脂をGPCで分析すると、Mw=2.52×10、Mw/Mn=1.91であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
 樹脂P-110の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が206℃であり、重量減少率は34%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が206℃であることがわかる。 
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 17.71 g of N, N-diisopropylethylamine was added, followed by 27.69 g of the transparent liquid for the compound represented by the structure (b5-1). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.2 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 22.71 g of the desired product (resin P-110) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.52 × 10 4 and Mw / Mn = 1.91. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
As a result of differential thermal balance analysis of the resin P-110, the endothermic peak top temperature was 206 ° C., and the weight loss rate was 34%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 206 ° C.
〔P-111の合成〕
 温度計、攪拌器、ディーンスターク、還流管を備えた500mLフラスコ中に1,1,2-トリメトキシエタン60.0g、2-メトキシエタノール190.0g、10-カンファースルホン酸1.74g、ヘキサン200mLを加え、48時間還流させた。反応液を0℃まで冷却し、トリエチルアミン3.79gを添加し、0℃で30分間攪拌した後、酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体97.2gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた300mLフラスコ中に上記溶液97.2g、塩化アセチル43.0g、塩化亜鉛10mgを加え室温で8時間反応させた後、減圧下にて濃縮し、下記構造(b5-2)で表される化合物を透明液体として93.8g得た。
[Synthesis of P-111]
In a 500 mL flask equipped with a thermometer, stirrer, Dean Stark, and reflux tube, 1,0.02 g of 1,1,2-trimethoxyethane, 190.0 g of 2-methoxyethanol, 1.74 g of 10-camphorsulfonic acid, 200 mL of hexane And refluxed for 48 hours. The reaction solution was cooled to 0 ° C., 3.79 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes, and then extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under reduced pressure to obtain 97.2 g of a transparent liquid.
After adding 97.2 g of the above solution, 43.0 g of acetyl chloride, and 10 mg of zinc chloride in a 300 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, the mixture was reacted at room temperature for 8 hours, and then concentrated under reduced pressure. 93.8 g of a compound represented by the structure (b5-2) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000109
Figure JPOXMLDOC01-appb-C000109
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン16.60g、続いて上記構造(b5-2)で表される化合物についての前記透明液体33.07gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-111)23.86gを得た。得られた樹脂をGPCで分析すると、Mw=2.62×10、Mw/Mn=1.62であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
 樹脂P-111の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が210℃であり、重量減少率は42%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が210℃であることがわかる。
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. 16.60 g of N, N-diisopropylethylamine was added, followed by 33.07 g of the transparent liquid for the compound represented by the structure (b5-2). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 23.86 g of the desired product (resin P-111) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.62 × 10 4 and Mw / Mn = 1.62. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
As a result of differential thermal balance analysis of the resin P-111, the endothermic peak top temperature was 210 ° C., and the weight reduction rate was 42%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 210 ° C.
〔P-112の合成〕
 温度計、攪拌器、ディーンスターク、還流管を備えた1Lフラスコ中に1,1,2-トリメトキシエタン150.0g、2-フェノキシエタノール379.5g、10-カンファースルホン酸4.35g、ヘキサン200mLを加え、48時間還流させた。反応液を0℃まで冷却し、トリエチルアミン9.47gを添加し、0℃で30分間攪拌した後、酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体532.4gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に上記溶液532.4g、塩化アセチル117.6g、塩化亜鉛10mgを加え室温で4時間反応させた後、減圧下にて濃縮し、下記構造(b5-3)で表される化合物を透明液体として518.2g得た。
[Synthesis of P-112]
In a 1 L flask equipped with a thermometer, stirrer, Dean Stark and reflux tube, 150.0 g of 1,1,2-trimethoxyethane, 379.5 g of 2-phenoxyethanol, 4.35 g of 10-camphorsulfonic acid, and 200 mL of hexane The mixture was refluxed for 48 hours. The reaction solution was cooled to 0 ° C., 9.47 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes, and then extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under reduced pressure to obtain 532.4 g of a transparent liquid.
In a 1 L flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 532.4 g of the above solution, 117.6 g of acetyl chloride and 10 mg of zinc chloride were added and reacted at room temperature for 4 hours, and then concentrated under reduced pressure. 518.2 g of a compound represented by the structure (b5-3) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000110
Figure JPOXMLDOC01-appb-C000110
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液260.4gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP129.2gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン36.55g、続いて上記構造(b5-3)で表される化合物についての前記透明液体216.87gを添加した。0℃以下で4時間反応させた後、反応液をメタノール3Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-112)68.68gを得た。得られた樹脂をGPCで分析すると、Mw=2.56×10、Mw/Mn=1.85であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ97%であった。
 樹脂P-112の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が211℃であり、重量減少率は51%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が211℃であることがわかる。
A polyamic acid was synthesized in the same manner as P-41, and 260.4 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 129.2 g of NMP was added and cooled to 0 ° C. or lower. N, N-diisopropylethylamine (36.55 g) was added, followed by 216.87 g of the transparent liquid for the compound represented by the structure (b5-3). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 68.68 g of the desired product (resin P-112) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.56 × 10 4 and Mw / Mn = 1.85. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 97%.
As a result of differential thermal balance analysis of the resin P-112, the endothermic peak top temperature was 211 ° C., and the weight loss rate was 51%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 211 ° C.
〔P-113の合成〕
 温度計、攪拌器、ディーンスターク、還流管を備えた500mLフラスコ中に1,1,2-トリメトキシエタン50.0g、シクロヘキサノール91.7g、10-カンファースルホン酸1.45g、ヘキサン200mLを加え、48時間還流させた。反応液を0℃まで冷却し、トリエチルアミン3.16gを添加し、0℃で30分間攪拌した後、酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体84.4gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた200mLフラスコ中に上記溶液84.4g、塩化アセチル31.0g、塩化亜鉛10mgを加え室温で4時間反応させた後、減圧下にて濃縮し、下記構造(b5-4)で表される化合物を透明液体として91.2g得た。
[Synthesis of P-113]
In a 500 mL flask equipped with a thermometer, stirrer, Dean Stark, and reflux tube, add 50.0 g of 1,1,2-trimethoxyethane, 91.7 g of cyclohexanol, 1.45 g of 10-camphorsulfonic acid, and 200 mL of hexane. And refluxed for 48 hours. The reaction solution was cooled to 0 ° C., 3.16 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes, and then extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under reduced pressure to obtain 84.4 g of a transparent liquid.
In a 200 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 84.4 g of the above solution, 31.0 g of acetyl chloride and 10 mg of zinc chloride were added and reacted at room temperature for 4 hours, and then concentrated under reduced pressure. 91.2 g of a compound represented by the structure (b5-4) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000111
Figure JPOXMLDOC01-appb-C000111
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン16.60g、続いて上記構造(b5-4)で表される化合物についての前記透明液体43.66gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-113)26.40gを得た。得られた樹脂をGPCで分析すると、Mw=2.52×10、Mw/Mn=1.64であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ88%であった。
 樹脂P-113の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が177℃であり、重量減少率は46%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が177℃であることがわかる。
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. N, N-diisopropylethylamine (16.60 g) was added, followed by 43.66 g of the clear liquid for the compound represented by the structure (b5-4). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 26.40 g of the desired product (resin P-113) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.52 × 10 4 and Mw / Mn = 1.64. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and it was 88%.
When differential thermal balance analysis of the resin P-113 was performed, the endothermic peak top temperature was 177 ° C., and the weight loss rate was 46%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 177 ° C.
〔P-114の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中にイソブチルアルデヒド50.0g、硫酸マグネシウム50.0g、メタノール200mL、10-カンファースルホン酸1.61gを加え、50℃で8時間反応させた。反応液を0℃まで冷却し、トリエチルアミン3.51gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液をヘキサンと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、常圧下にて濃縮し、透明液体58.3gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中に上記溶液58.3g、塩化アセチル42.0g、塩化亜鉛10mgを加え50℃で24時間反応させ、下記構造(b5-5)で表される化合物を透明液体として81.0g得た。
[Synthesis of P-114]
In a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 50.0 g of isobutyraldehyde, 50.0 g of magnesium sulfate, 200 mL of methanol, and 1.61 g of 10-camphorsulfonic acid were added and reacted at 50 ° C. for 8 hours. . The reaction solution was cooled to 0 ° C., 3.51 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with hexane and saturated aqueous sodium bicarbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under normal pressure to obtain 58.3 g of a transparent liquid.
In a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 58.3 g of the above solution, 42.0 g of acetyl chloride, and 10 mg of zinc chloride were added and reacted at 50 ° C. for 24 hours, and represented by the following structure (b5-5) 81.0 g of the resulting compound was obtained as a clear liquid.
Figure JPOXMLDOC01-appb-C000112
Figure JPOXMLDOC01-appb-C000112
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン22.14g、続いて上記構造(b5-5)で表される化合物についての前記透明液体33.16gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-114)20.12gを得た。得られた樹脂をGPCで分析すると、Mw=2.28×10、Mw/Mn=1.74であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ91%であった。
 樹脂P-114の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が163℃であり、重量減少率は32%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が163℃であることがわかる。
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 22.14 g of N, N-diisopropylethylamine was added, followed by 33.16 g of the transparent liquid for the compound represented by the structure (b5-5). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 20.12 g of the desired product (resin P-114) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.28 × 10 4 and Mw / Mn = 1.74. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and found to be 91%.
As a result of differential thermal balance analysis of the resin P-114, the endothermic peak top temperature was 163 ° C., and the weight reduction rate was 32%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 163 ° C.
〔P-115の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中にイソブチルアルデヒド50.0g、硫酸マグネシウム77.8g、2-メトキシエタノール158.3g、10-カンファースルホン酸1.61gを加え、50℃で10時間反応させた。反応液を0℃まで冷却し、トリエチルアミン3.51gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液を酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体105.9gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中に上記溶液105.9g、塩化アセチル48.3gを加え室温で4時間反応させさせた後、減圧下にて濃縮し、下記構造(b5-6)で表される化合物を透明液体として111.1g得た。
[Synthesis of P-115]
In a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 50.0 g of isobutyraldehyde, 77.8 g of magnesium sulfate, 158.3 g of 2-methoxyethanol, and 1.61 g of 10-camphorsulfonic acid were added, and at 50 ° C. The reaction was carried out for 10 hours. The reaction solution was cooled to 0 ° C., 3.51 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under reduced pressure to obtain 105.9 g of a transparent liquid.
10500 g of the above solution and 48.3 g of acetyl chloride were added to a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, reacted at room temperature for 4 hours, and then concentrated under reduced pressure, and the following structure (b5 111.1 g of the compound represented by −6) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000113
Figure JPOXMLDOC01-appb-C000113
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン22.14g、続いて上記構造(b5-6)で表される化合物についての前記透明液体35.80gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-115)19.76gを得た。得られた樹脂をGPCで分析すると、Mw=2.64×10、Mw/Mn=1.62であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
 樹脂P-115の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が164℃であり、重量減少率は42%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が164℃であることがわかる。
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 22.14 g of N, N-diisopropylethylamine was added, followed by 35.80 g of the transparent liquid for the compound represented by the structure (b5-6). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 19.76 g of the desired product (resin P-115) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.64 × 10 4 and Mw / Mn = 1.62. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
As a result of differential thermal balance analysis of the resin P-115, the endothermic peak top temperature was 164 ° C., and the weight loss rate was 42%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 164 ° C.
〔P-118の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に2-フェニルプロピオンアルデヒド120.0g、硫酸マグネシウム120.0g、メタノール600mL、10-カンファースルホン酸2.08gを加え、50℃で11時間反応させた。反応液を0℃まで冷却し、トリエチルアミン4.53gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液を酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体144.2gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に上記溶液144.2g、塩化アセチル84.2gを加え室温で2時間反応させた後、減圧下にて濃縮し、下記構造
(b5-9)で表される化合物を透明液体として132.2g得た。
[Synthesis of P-118]
In a 1 L flask equipped with a thermometer, a stirrer and a calcium chloride tube, 120.0 g of 2-phenylpropionaldehyde, 120.0 g of magnesium sulfate, 600 mL of methanol, and 2.08 g of 10-camphorsulfonic acid were added, and the mixture was stirred at 50 ° C. for 11 hours. Reacted. The reaction solution was cooled to 0 ° C., 4.53 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under reduced pressure to obtain 144.2 g of a transparent liquid.
After adding 144.2 g of the above solution and 84.2 g of acetyl chloride to a 1 L flask equipped with a thermometer, a stirrer, and a calcium chloride tube, the mixture was reacted at room temperature for 2 hours, then concentrated under reduced pressure, and the following structure (b5- 132.2 g of the compound represented by 9) was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000114
Figure JPOXMLDOC01-appb-C000114
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液250.0gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP124.0gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いて上記構造(b5-9)で表される化合物についての前記透明液体40.82gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール2.7Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-118)66.54gを得た。得られた樹脂をGPCで分析すると、Mw=2.43×10、Mw/Mn=2.13であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
 樹脂P-118の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が165℃であり、重量減少率は44%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が165℃であることがわかる。
A polyamic acid was synthesized in the same manner as P-41, and 250.0 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 124.0 g of NMP was added and cooled to 0 ° C. or lower. Then, 28.51 g of N, N-diisopropylethylamine was added, followed by 40.82 g of the transparent liquid for the compound represented by the structure (b5-9). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 2.7 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 66.54 g of the desired product (resin P-118) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.43 × 10 4 and Mw / Mn = 2.13. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
As a result of differential thermal balance analysis of the resin P-118, the endothermic peak top temperature was 165 ° C., and the weight loss rate was 44%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 165 ° C.
〔P-120の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた300mLフラスコ中に2-フェニルプロピオンアルデヒド59.8g、硫酸マグネシウム50.0g、2-メトキシエタノール101.8g、10-カンファースルホン酸1.04gを加え、50℃で12時間反応させた。反応液を0℃まで冷却し、トリエチルアミン2.26gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液を酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体91.6gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた300mLフラスコ中に上記溶液91.6g、塩化アセチル42.0gを加え室温で2時間反応させた後、減圧下にて濃縮し、下記(b5-10)で表される化合物を透明液体として97.1g得た。
[Synthesis of P-120]
In a 300 mL flask equipped with a thermometer, stirrer, and calcium chloride tube, 59.8 g of 2-phenylpropionaldehyde, 50.0 g of magnesium sulfate, 101.8 g of 2-methoxyethanol, and 1.04 g of 10-camphorsulfonic acid were added, The reaction was carried out at 50 ° C. for 12 hours. The reaction solution was cooled to 0 ° C., 2.26 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under reduced pressure to obtain 91.6 g of a transparent liquid.
In a 300 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 91.6 g of the above solution and 42.0 g of acetyl chloride were added and reacted at room temperature for 2 hours, then concentrated under reduced pressure, and the following (b5-10) ) Was obtained as a transparent liquid.
Figure JPOXMLDOC01-appb-C000115
Figure JPOXMLDOC01-appb-C000115
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.0gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.0gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン16.45g、続いて上記構造(b5-10)で表される化合物についての前記透明液体68.97gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-120)29.96gを得た。得られた樹脂をGPCで分析すると、Mw=2.44×10、Mw/Mn=1.67であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ96%であった。
 樹脂P-120の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が162℃であり、重量減少率は50%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が162℃であることがわかる。更に198℃でイミド閉環と見られる吸熱ピークも観測された。
Polyamic acid was synthesized in the same manner as P-41, and 125.0 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 62.0 g of NMP was added and cooled to 0 ° C. or lower. 16.45 g of N, N-diisopropylethylamine was added, followed by 68.97 g of the clear liquid for the compound represented by the structure (b5-10). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 29.96 g of the desired product (resin P-120) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.44 × 10 4 and Mw / Mn = 1.67. The solid was dissolved in deuterated DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 96%.
As a result of differential thermal balance analysis of the resin P-120, the endothermic peak top temperature was 162 ° C., and the weight loss rate was 50%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 162 ° C. Furthermore, an endothermic peak that was considered to be an imide ring closure at 198 ° C. was also observed.
〔P-122の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中に2-フェニルプロピオンアルデヒド120.0g、硫酸マグネシウム100.0g、2-プロポキシエタノール204.9g、10-カンファースルホン酸2.08gを加え、50℃で12時間反応させた。反応液を0℃まで冷却し、トリエチルアミン4.53gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液を酢酸エチルと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体を得た。
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に上記溶液全量、塩化アセチル84.2gを加え室温で2時間反応させた後、減圧下にて濃縮し、下記構造(b5-11)で表される化合物を透明液体として211.7g得た。
[Synthesis of P-122]
In a 500 mL flask equipped with a thermometer, stirrer, and calcium chloride tube, 120.0 g of 2-phenylpropionaldehyde, 100.0 g of magnesium sulfate, 204.9 g of 2-propoxyethanol, and 2.08 g of 10-camphorsulfonic acid were added. The reaction was carried out at 50 ° C. for 12 hours. The reaction solution was cooled to 0 ° C., 4.53 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with ethyl acetate and saturated aqueous sodium hydrogen carbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under reduced pressure to obtain a transparent liquid.
In a 1 L flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 84.2 g of the above solution was added and reacted at room temperature for 2 hours. The mixture was then concentrated under reduced pressure, and the following structure (b5-11) As a transparent liquid, 211.7 g of a compound represented by the formula:
Figure JPOXMLDOC01-appb-C000116
Figure JPOXMLDOC01-appb-C000116
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液260.4gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP129.2gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン36.55g、続いて上記構造(b5-11)で表される化合物についての前記透明液体173.21gを添加した。0℃以下で4時間反応させた後、反応液をメタノール3Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-122)64.02gを得た。得られた樹脂をGPCで分析すると、Mw=2.71×10、Mw/Mn=1.82であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
 樹脂P-122の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が163℃であり、重量減少率は54%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が163℃であることがわかる。更に206℃でイミド閉環と見られる吸熱ピークも観測された。
A polyamic acid was synthesized in the same manner as P-41, and 260.4 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 129.2 g of NMP was added and cooled to 0 ° C. or lower. N, N-diisopropylethylamine (36.55 g) was added, and then 173.21 g of the transparent liquid for the compound represented by the structure (b5-11) was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 64.02 g of the desired product (resin P-122) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.71 × 10 4 and Mw / Mn = 1.82. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
As a result of differential thermal balance analysis of the resin P-122, the endothermic peak top temperature was 163 ° C., and the weight reduction rate was 54%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 163 ° C. Furthermore, an endothermic peak that was considered to be imide ring closure at 206 ° C. was also observed.
〔P-127の合成〕
 温度計、攪拌器、塩化カルシウム管を備えた500mLフラスコ中にピバルアルデヒド39.2g、硫酸マグネシウム40.0g、メタノール50mL、ヘキサン200mL、10-カンファースルホン酸1.06gを加え、50℃で12時間反応させた。反応液を0℃まで冷却し、トリエチルアミン2.30gを添加し、0℃で30分間攪拌した。硫酸マグネシウムをろ過し、ろ液をヘキサンと飽和重曹水で抽出した。得られた有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、常圧下にて濃縮し、透明液体82.1gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた200mLフラスコ中に上記溶液76.6g、塩化アセチル17.0g、塩化亜鉛10mgを加え50℃で12時間反応させ、下記構造(b5-14)で表される化合物を透明液体として112.0g得た。
[Synthesis of P-127]
In a 500 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 39.2 g of pivalaldehyde, 40.0 g of magnesium sulfate, 50 mL of methanol, 200 mL of hexane, and 1.06 g of 10-camphorsulfonic acid were added. Reacted for hours. The reaction solution was cooled to 0 ° C., 2.30 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. Magnesium sulfate was filtered, and the filtrate was extracted with hexane and saturated aqueous sodium bicarbonate. The obtained organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and then concentrated under normal pressure to obtain 82.1 g of a transparent liquid.
In a 200 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 76.6 g of the above solution, 17.0 g of acetyl chloride and 10 mg of zinc chloride were added and reacted at 50 ° C. for 12 hours, and represented by the following structure (b5-14) 112.0 g of the resulting compound was obtained as a clear liquid.
Figure JPOXMLDOC01-appb-C000117
Figure JPOXMLDOC01-appb-C000117
 P-41と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液125.8gを温度計、攪拌器、窒素導入管を備えた300mLフラスコ中に加え、NMP62.3gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン17.71g、続いて上記構造(b5-14)で表される化合物についての前記透明液体51.47gを添加した。0℃以下で4時間反応させた後、反応液をメタノール1.5Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-127)15.27gを得た。得られた樹脂をGPCで分析すると、Mw=2.57×10、Mw/Mn=1.57であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
 樹脂P-127の示差熱天秤分析を行ったところ、吸熱ピークトップ温度が230℃であり、重量減少率は37%であった。この重量減少率は、一般式(1)で表される繰り返し単位中のRの重量に相当し、Rの熱分解温度が230℃であることがわかる。
Polyamic acid was synthesized in the same manner as P-41, and 125.8 g of this polyamic acid solution was added to a 300 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 62.3 g of NMP was added and cooled to 0 ° C. or lower. Then, 17.71 g of N, N-diisopropylethylamine was added, followed by 51.47 g of the transparent liquid for the compound represented by the structure (b5-14). After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 1.5 L of methanol, and the precipitated solid was collected by filtration and dried to obtain 15.27 g of the desired product (resin P-127) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.57 × 10 4 and Mw / Mn = 1.57. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
When differential thermal balance analysis of the resin P-127 was performed, the endothermic peak top temperature was 230 ° C., and the weight reduction rate was 37%. This weight reduction rate corresponds to the weight of R 3 in the repeating unit represented by the general formula (1), and it can be seen that the thermal decomposition temperature of R 3 is 230 ° C.
〔P-130の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた1Lフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)20.96gを入れ、NMP(N-メチル-2-ピロリドン)628.8gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)90.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)27.27g、NMP154.6gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=2.44×10、Mn=0.95×10、Mw/Mn=2.58であった。
[Synthesis of P-130]
Synthesis of polyamic acid 20.96 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- After dissolving in 628.8 g of pyrrolidone), 90.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Subsequently, 27.27 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 154.6 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.63 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 2.44 × 10 4 , Mn = 0.95 × 10 4 , and Mw / Mn = 2.58.
ポリアミック酸エステルの合成
 このポリアミック酸溶液246.71gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP122.87gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン27.96g、続いてP-118で合成した(b5-9)の液体40.04gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール2.6Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-130)62.92gを得た。得られた樹脂をGPCで分析すると、Mw=3.33×10、Mw/Mn=2.02であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
Synthesis of polyamic acid ester 246.71 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 122.87 g of NMP was added and cooled, and N, N-diisopropylethylamine 27 was added at 0 ° C. or lower. .96 g followed by 40.04 g of the liquid from (b5-9) synthesized on P-118. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 2.6 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 62.92 g of the desired product (resin P-130) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 3.33 × 10 4 and Mw / Mn = 2.02. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-131の合成〕
 P-130と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液246.71gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP122.87gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン27.96g、続いてP-122で合成した(b5-11)の液体112.94gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-131)70.16gを得た。得られた樹脂をGPCで分析すると、Mw=3.85×10、Mw/Mn=1.90であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
[Synthesis of P-131]
Polyamic acid was synthesized in the same manner as P-130, and 246.71 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 122.87 g of NMP was added and cooled to 0 ° C. or lower. Was added 27.96 g of N, N-diisopropylethylamine, followed by 112.94 g of the liquid (b5-11) synthesized on P-122. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 70.16 g of the desired product (resin P-131) as a white solid. When the obtained resin was analyzed by GPC, Mw = 3.85 × 10 4 and Mw / Mn = 1.90. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-132の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた1Lフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)20.96gを入れ、NMP(N-メチル-2-ピロリドン)628.8gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)90.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)25.98g、NMP147.2gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸1.81gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=3.04×10、Mn=1.19×10、Mw/Mn=2.55であった。
[Synthesis of P-132]
Synthesis of polyamic acid 20.96 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- After dissolving in 628.8 g of pyrrolidone), 90.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Next, 25.98 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 147.2 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 1.81 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 3.04 * 10 < 4 >, Mn = 1.19 * 10 < 4 >, Mw / Mn = 2.55.
ポリアミック酸エステルの合成
 このポリアミック酸溶液243.92gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP121.72gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン27.41g、続いてP-118で合成した(b5-9)の液体39.25gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール2.6Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-132)61.84gを得た。得られた樹脂をGPCで分析すると、Mw=4.12×10、Mw/Mn=2.35であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 243.92 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, NMP 121.72 g was added and cooled, and N, N-diisopropylethylamine 27 .41 g was added, followed by 39.25 g of the liquid from (b5-9) synthesized on P-118. After reacting at 0 ° C. or less for 4 hours, the reaction solution was added to 2.6 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 61.84 g of the desired product (resin P-132) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 4.12 × 10 4 and Mw / Mn = 2.35. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-133の合成〕
 P-132と同様にポリアミック酸の合成を行ない、このポリアミック酸溶液243.92gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP121.72gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン27.41g、続いてP-122で合成した(b5-11)の液体110.72gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-133)71.19gを得た。得られた樹脂をGPCで分析すると、Mw=4.79×10、Mw/Mn=1.98であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
[Synthesis of P-133]
Polyamic acid was synthesized in the same manner as P-132, and 243.92 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 121.72 g of NMP was added and cooled to 0 ° C. or lower. Then, 27.41 g of N, N-diisopropylethylamine was added, followed by 110.72 g of the liquid (b5-11) synthesized in P-122. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 71.19 g of the desired product (resin P-133) as a white solid. When the obtained resin was analyzed by GPC, Mw = 4.79 × 10 4 and Mw / Mn = 1.98. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-134の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48g、2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)14.61gを入れ、NMP(N-メチル-2-ピロリドン)397.2gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00gを添加した。60℃で6時間攪拌し室温まで放冷した。無水フタル酸4.53gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=2.10×10、Mn=0.76×10、Mw/Mn=2.77であった。
[Synthesis of P-134]
Synthesis of polyamic acid 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.), 2,2′-dimethyl-4,4 in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube After putting 14.61 g of '-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and dissolving in 397.2 g of NMP (N-methyl-2-pyrrolidone), 3,3', 4,4'-biphenyltetracarboxylic 45.00 g of acid anhydride (Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 6 hours and allowed to cool to room temperature. 4.53 g of phthalic anhydride was added and stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 2.10 × 10 4 , Mn = 0.76 × 10 4 , and Mw / Mn = 2.77.
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に2-フェニルプロピオンアルデヒド240.0g、硫酸マグネシウム240.0g、2-プロポキシエタノール558.9g、p-トルエンスルホン酸一水和物17.01gを加え、室温で12時間反応させた。反応液を0℃まで冷却し、トリエチルアミン45.25gを添加し、0℃で30分間攪拌した。酢酸エチル500mLを添加し、蒸留水1Lを加えて硫酸マグネシウムを完溶させた。分液した後、有機層を蒸留水、飽和食塩水で洗浄し、硫酸ナトリウムで乾燥した後、減圧下にて濃縮し、透明液体657.8gを得た。
 温度計、攪拌器、塩化カルシウム管を備えた1Lフラスコ中に上記液体652.8g、塩化アセチル168.5gを加え室温で4時間反応させた後、減圧下にて濃縮し、(b5-11)の透明液体716.6gを得た。
In a 1 L flask equipped with a thermometer, stirrer, and calcium chloride tube, 240.0 g of 2-phenylpropionaldehyde, 240.0 g of magnesium sulfate, 558.9 g of 2-propoxyethanol, p-toluenesulfonic acid monohydrate 17. 01g was added and it was made to react at room temperature for 12 hours. The reaction solution was cooled to 0 ° C., 45.25 g of triethylamine was added, and the mixture was stirred at 0 ° C. for 30 minutes. 500 mL of ethyl acetate was added, and 1 L of distilled water was added to completely dissolve magnesium sulfate. After liquid separation, the organic layer was washed with distilled water and saturated brine, dried over sodium sulfate, and concentrated under reduced pressure to obtain 657.8 g of a transparent liquid.
In a 1 L flask equipped with a thermometer, a stirrer and a calcium chloride tube, 652.8 g of the above liquid and 168.5 g of acetyl chloride were added and reacted at room temperature for 4 hours, and then concentrated under reduced pressure, (b5-11) 716.6 g of a clear liquid was obtained.
ポリアミック酸エステルの合成
 ポリアミック酸溶液251.63gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP124.6gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.78g、続いて上記の(b5-11)の液体111.05gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-134)73.69gを得た。得られた樹脂をGPCで分析すると、Mw=3.21×10、Mw/Mn=1.86であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
Synthesis of polyamic acid ester 251.63 g of a polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 124.6 g of NMP was added and cooled, and N, N-diisopropylethylamine 28. 78 g was added, followed by 111.05 g of the liquid (b5-11) above. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 73.69 g of the desired product (resin P-134) as a white solid. When the obtained resin was analyzed by GPC, Mw = 3.21 × 10 4 and Mw / Mn = 1.86. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-135の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48g、2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)13.64gを入れ、NMP(N-メチル-2-ピロリドン)391.7gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00gを添加した。60℃で6時間攪拌し室温まで放冷した。無水フタル酸1.81gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=3.46×10、Mn=1.25×10、Mw/Mn=2.76であった。
[Synthesis of P-135]
Synthesis of polyamic acid 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.), 2,2′-dimethyl-4,4 in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube 13.64 g of '-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) was added and dissolved in 391.7 g of NMP (N-methyl-2-pyrrolidone), and then 3,3', 4,4'-biphenyltetracarboxylic 45.00 g of acid anhydride (Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 6 hours and allowed to cool to room temperature. 1.81 g of phthalic anhydride was added and stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 3.46 × 10 4 , Mn = 1.25 × 10 4 , and Mw / Mn = 2.76.
ポリアミック酸エステルの合成
 このポリアミック酸溶液251.85gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP125.4gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.54g、続いてP-134で合成した(b5-11)の液体110.43gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-135)74.57gを得た。得られた樹脂をGPCで分析すると、Mw=5.49×10、Mw/Mn=2.02であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
Synthesis of polyamic acid ester 251.85 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and N5.412 g of NMP was added and cooled. .54 g, followed by 110.43 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 74.57 g of the desired product (resin P-135) as a white solid. When the obtained resin was analyzed by GPC, Mw = 5.49 × 10 4 and Mw / Mn = 2.02. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-136の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48g、2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)13.31gを入れ、NMP(N-メチル-2-ピロリドン)389.8gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00gを添加した。60℃で6時間攪拌し室温まで放冷した。無水フタル酸0.91gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=5.71×10、Mn=2.07×10、Mw/Mn=2.76であった。
[Synthesis of P-136]
Synthesis of polyamic acid 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.), 2,2′-dimethyl-4,4 in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube 13.31 g of '-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) was added and dissolved in 389.8 g of NMP (N-methyl-2-pyrrolidone), and then 3,3', 4,4'-biphenyltetracarboxylic 45.00 g of acid anhydride (Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 6 hours and allowed to cool to room temperature. 0.91 g of phthalic anhydride was added and stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 5.71 × 10 4 , Mn = 2.07 × 10 4 , and Mw / Mn = 2.76.
ポリアミック酸エステルの合成
 このポリアミック酸溶液255.29gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP127.4gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.84g、続いてP-134で合成した(b5-11)の液体111.57gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-136)78.88gを得た。得られた樹脂をGPCで分析すると、Mw=8.58×10、Mw/Mn=2.09であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 255.29 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 127.4 g of NMP was added and cooled. .84 g, followed by 111.57 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 78.88 g of the desired product (resin P-136) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 8.58 × 10 4 and Mw / Mn = 2.09. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-138の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)6.99gを入れ、NMP(N-メチル-2-ピロリドン)294.6gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化
(株)製)20.78g、NMP117.8gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.82×10、Mn=0.71×10、Mw/Mn=2.55であった。
[Synthesis of P-138]
Synthesis of polyamic acid 6.99 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- After dissolving in 294.6 g of pyrrolidone), 45.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Next, 20.78 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 117.8 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.63 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.82 × 10 4 , Mn = 0.71 × 10 4 , and Mw / Mn = 2.55.
ポリアミック酸エステルの合成
 このポリアミック酸溶液260.66gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP129.4gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いてP-134で合成した(b5-11)の液体110.22gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-138)72.98gを得た。得られた樹脂をGPCで分析すると、Mw=2.76×10、Mw/Mn=1.79であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ99%であった。
Synthesis of polyamic acid ester 260.66 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer and a nitrogen introducing tube, 129.4 g of NMP was added and cooled, and N, N-diisopropylethylamine 28 .51 g followed by 110.22 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 72.98 g of the desired product (resin P-138) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.76 × 10 4 and Mw / Mn = 1.79. The solid was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 99%.
〔P-139の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)8.73gを入れ、NMP(N-メチル-2-ピロリドン)304.5gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化
(株)製)17.53g、NMP99.4gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.68×10、Mn=0.65×10、Mw/Mn=2.58であった。
[Synthesis of P-139]
Synthesis of polyamic acid In a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 8.73 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed, and NMP (N-methyl-2- After dissolving in 304.5 g of pyrrolidone), 45.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Next, 17.53 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 99.4 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.63 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, Mw = 1.68 × 10 4 , Mn = 0.65 × 10 4 , and Mw / Mn = 2.58.
ポリアミック酸エステルの合成
 このポリアミック酸溶液255.32gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP126.7gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いてP-134で合成した(b5-11)の液体110.22gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-139)71.56gを得た。得られた樹脂をGPCで分析すると、Mw=2.67×10、Mw/Mn=1.78であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ98%であった。
Synthesis of polyamic acid ester 255.32 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, and 126.7 g of NMP was added and cooled. .51 g followed by 110.22 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 71.56 g of a white solid target product (Resin P-139). When the obtained resin was analyzed by GPC, Mw = 2.67 × 10 4 and Mw / Mn = 1.78. The solid was dissolved in heavy DMSO, 1 H-NMR spectrum was measured, and the protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, and it was 98%.
〔P-141の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)13.04gを入れ、NMP(N-メチル-2-ピロリドン)345.9gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)48.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)11.78g、NMP66.7gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.87gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.54×10、Mn=0.53×10、Mw/Mn=2.89であった。
[Synthesis of P-141]
Synthesis of polyamic acid 13.04 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- After dissolving in 345.9 g of pyrrolidone), 48.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Next, 11.78 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 66.7 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.87 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.54 × 10 4 , Mn = 0.53 × 10 4 , and Mw / Mn = 2.89.
ポリアミック酸エステルの合成
 このポリアミック酸溶液254.85gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP126.4gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン29.69g、続いてP-134で合成した(b5-11)の液体114.82gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-141)73.07gを得た。得られた樹脂をGPCで分析すると、Mw=2.52×10、Mw/Mn=1.76であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 254.85 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 126.4 g of NMP was added and cooled, and N, N-diisopropylethylamine 29 was added at 0 ° C. or lower. .69 g followed by 114.82 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 73.07 g of the desired product (resin P-141) as a white solid. When the obtained resin was analyzed by GPC, Mw = 2.52 × 10 4 and Mw / Mn = 1.76. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-142の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)15.21gを入れ、NMP(N-メチル-2-ピロリドン)363.9gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)49.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)8.49g、NMP48.1gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.95gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.56×10、Mn=0.52×10、Mw/Mn=2.99であった。
[Synthesis of P-142]
Synthesis of polyamic acid 15.21 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- After dissolving in 363.9 g of pyrrolidone), 49.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Next, 8.49 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 48.1 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.95 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.56 × 10 4 , Mn = 0.52 × 10 4 , and Mw / Mn = 2.99.
ポリアミック酸エステルの合成
 このポリアミック酸溶液249.29gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP123.6gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン29.69g、続いてP-134で合成した(b5-11)の液体114.82gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-142)73.21gを得た。得られた樹脂をGPCで分析すると、Mw=2.65×10、Mw/Mn=1.78であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 249.29 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, NMP 123.6 g was added and cooled, and N, N-diisopropylethylamine 29 .69 g followed by 114.82 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 73.21 g of the desired product (resin P-142) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.65 × 10 4 and Mw / Mn = 1.78. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-143の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)17.47gを入れ、NMP(N-メチル-2-ピロリドン)382.3gに溶解した後、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)50.00gを添加した。60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)5.05g、NMP28.6gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸4.03gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.54×10、Mn=0.41×10、Mw/Mn=3.73であった。
[Synthesis of P-143]
Synthesis of polyamic acid In a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 17.47 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed, and NMP (N-methyl-2- After dissolving in 382.3 g of pyrrolidone), 50.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic acid anhydride (manufactured by Mitsubishi Chemical Corporation) was added. The mixture was stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. Subsequently, 2,5′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) (5.05 g) and NMP (28.6 g) were added, and the mixture was stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 4.03 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, Mw = 1.54 × 10 4 , Mn = 0.41 × 10 4 , and Mw / Mn = 3.73.
ポリアミック酸エステルの合成
 このポリアミック酸溶液243.73gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP120.9gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン29.69g、続いてP-134で合成した(b5-11)の液体114.57gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.2Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-143)72.50gを得た。得られた樹脂をGPCで分析すると、Mw=2.68×10、Mw/Mn=1.80であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 243.73 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introducing tube, 120.9 g of NMP was added and cooled, and N, N-diisopropylethylamine 29 was added at 0 ° C. or lower. .69 g followed by 114.57 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.2 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 72.50 g of the desired product (resin P-143) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.68 × 10 4 and Mw / Mn = 1.80. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-144の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中にtrans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48gを入れ、NMP(N-メチル-2-ピロリドン)314.4gに溶解した。70℃に加熱し、3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)15.00gを添加し、70℃で15分間攪拌した。更に3,3’,4,4’-ビフェニルテトラカルボン酸無水物15.00gを添加し、70℃で15分間攪拌した。更に3,3’,4,4’-ビフェニルテトラカルボン酸無水物15.00gを添加し、60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)14.29g、NMP81.0gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.50×10、Mn=0.60×10、Mw/Mn=2.50であった。
[Synthesis of P-144]
Synthesis of polyamic acid 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) was placed in a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and NMP (N-methyl-2- Pyrrolidone) was dissolved in 314.4 g. The mixture was heated to 70 ° C., 15.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (Mitsubishi Chemical Corporation) was added, and the mixture was stirred at 70 ° C. for 15 minutes. Further, 15.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride was added and stirred at 70 ° C. for 15 minutes. Further, 15.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride was added, stirred at 60 ° C. for 4 hours, and allowed to cool to room temperature. Next, 14.29 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 81.0 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.63 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.50 × 10 4 , Mn = 0.60 × 10 4 , and Mw / Mn = 2.50.
ポリアミック酸エステルの合成
 このポリアミック酸溶液249.99gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP124.0gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いてP-134で合成した(b5-11)の液体107.22gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-144)72.20gを得た。得られた樹脂をGPCで分析すると、Mw=2.39×10、Mw/Mn=1.76であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 249.999 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 124.0 g of NMP was added and cooled, and N, N-diisopropylethylamine 28 .51 g followed by 107.22 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 72.20 g of the desired product (resin P-144) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 2.39 × 10 4 and Mw / Mn = 1.76. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-145の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00g、NMP(N-メチル-2-ピロリドン)234.4gを入れ、攪拌しながら70℃に加熱した。trans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48gをNMP80gに溶かした溶液を、上記フラスコに30分間かけて滴下した後、60℃で4時間攪拌し室温まで放冷した。次いで2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)14.29g、NMP81.0gを添加し60℃で2時間攪拌した。室温まで放冷し、無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=1.21×10、Mn=0.47×10、Mw/Mn=2.58であった。
[Synthesis of P-145]
Synthesis of polyamic acid 45.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation), NMP (in a 500 mL flask equipped with a thermometer, a stirrer and a nitrogen introduction tube) N-methyl-2-pyrrolidone) 234.4 g was added and heated to 70 ° C. with stirring. A solution prepared by dissolving 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) in 80 g of NMP was added dropwise to the flask over 30 minutes, then stirred at 60 ° C. for 4 hours and allowed to cool to room temperature. . Next, 14.29 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) and 81.0 g of NMP were added and stirred at 60 ° C. for 2 hours. The mixture was allowed to cool to room temperature, 3.63 g of phthalic anhydride was added, and the mixture was stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 1.21 × 10 4 , Mn = 0.47 × 10 4 , and Mw / Mn = 2.58.
ポリアミック酸エステルの合成
 このポリアミック酸溶液249.99gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP124.0gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いてP-134で合成した(b5-11)の液体107.22gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-145)67.95gを得た。得られた樹脂をGPCで分析すると、Mw=1.94×10、Mw/Mn=1.69であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 249.999 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 124.0 g of NMP was added and cooled, and N, N-diisopropylethylamine 28 .51 g followed by 107.22 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 67.95 g of the desired product (resin P-145) as a white solid. When the obtained resin was analyzed by GPC, it was Mw = 1.94 × 10 4 and Mw / Mn = 1.69. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
〔P-146の合成〕
ポリアミック酸の合成
 温度計、攪拌器、窒素導入管を備えた500mLフラスコ中に3,3’,4,4’-ビフェニルテトラカルボン酸無水物(三菱化学(株)製)45.00g、NMP(N-メチル-2-ピロリドン)265.3gを入れ、攪拌しながら70℃に加熱した。trans-1,4-シクロヘキサンジアミン(岩谷瓦斯(株)製)10.48g、2,2’-ジメチル-4,4’-ジアミノビフェニル(和歌山精化(株)製)14.29gをNMP130gに溶かした溶液を、上記フラスコに30分間かけて滴下した後、60℃で6時間攪拌し室温まで放冷した。次いで無水フタル酸3.63gを添加し、室温で10時間攪拌してやや褐色透明のポリアミック酸溶液を得た。得られた溶液をGPCで分析すると、Mw=2.26×10、Mn=0.85×10、Mw/Mn=2.65であった。
[Synthesis of P-146]
Synthesis of polyamic acid In a 500 mL flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 35.00 g of 3,3 ′, 4,4′-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation), NMP ( N-methyl-2-pyrrolidone) (265.3 g) was added and heated to 70 ° C. with stirring. 10.48 g of trans-1,4-cyclohexanediamine (manufactured by Iwatani Gas Co., Ltd.) and 14.29 g of 2,2′-dimethyl-4,4′-diaminobiphenyl (manufactured by Wakayama Seika Co., Ltd.) were dissolved in 130 g of NMP. The solution was added dropwise to the flask over 30 minutes, stirred at 60 ° C. for 6 hours, and allowed to cool to room temperature. Subsequently, 3.63 g of phthalic anhydride was added and stirred at room temperature for 10 hours to obtain a slightly brown transparent polyamic acid solution. When the obtained solution was analyzed by GPC, it was Mw = 2.26 × 10 4 , Mn = 0.85 × 10 4 , and Mw / Mn = 2.65.
ポリアミック酸エステルの合成
 このポリアミック酸溶液249.99gを温度計、攪拌器、窒素導入管を備えた1Lフラスコ中に加え、NMP124.0gを加え冷却し、0℃以下でN,N-ジイソプロピルエチルアミン28.51g、続いてP-134で合成した(b5-11)の液体107.22gを添加した。0℃以下で4時間反応させた後、反応液をイソプロパノール3.1Lに加え、析出固体を濾取、乾燥し、白色固体の目的物(樹脂P-146)72.30gを得た。得られた樹脂をGPCで分析すると、Mw=3.75×10、Mw/Mn=1.93であった。固体を重DMSOに溶解してH-NMRスペクトルを測定し、カルボン酸エステルとカルボン酸のピーク積分比から保護率を算出したところ100%であった。
Synthesis of polyamic acid ester 249.999 g of this polyamic acid solution was added to a 1 L flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, and 124.0 g of NMP was added and cooled, and N, N-diisopropylethylamine 28 .51 g followed by 107.22 g of the liquid (b5-11) synthesized on P-134 was added. After reacting at 0 ° C. or lower for 4 hours, the reaction solution was added to 3.1 L of isopropanol, and the precipitated solid was collected by filtration and dried to obtain 72.30 g of the desired product (resin P-146) as a white solid. When the obtained resin was analyzed by GPC, Mw = 3.75 × 10 4 and Mw / Mn = 1.93. The solid was dissolved in heavy DMSO, and the 1 H-NMR spectrum was measured. The protection ratio was calculated from the peak integral ratio of the carboxylic acid ester to the carboxylic acid, which was 100%.
 その他の樹脂も同様にして合成した。これら合成した樹脂の、4価の有機基R周辺構造が由来するモノマー構造、2価の有機基R周辺のジアミンモノマー、R周辺構造を形成するモノマーと、R周辺のジアミンモノマーとの仕込みモル比、Rについての酸の作用により分解しアルカリ可溶性基を生じる基(併用する場合は各々のモル比)、該基によるカルボキシル基の保護率、末端封止剤、合成法、質量平均分子量、及び分散度(Mw/Mn)は、下記表1~4の通りであった。 Other resins were synthesized in the same manner. A monomer structure derived from the tetravalent organic group R 1 peripheral structure of these synthesized resins, a diamine monomer around the divalent organic group R 2 , a monomer forming the R 1 peripheral structure, and a diamine monomer around the R 2 Charge molar ratio, groups that decompose by the action of an acid on R 3 to generate alkali-soluble groups (in the case of combined use, the respective molar ratios), protection rate of carboxyl groups by the groups, end-capping agent, synthesis method, mass The average molecular weight and dispersity (Mw / Mn) were as shown in Tables 1 to 4 below.
Figure JPOXMLDOC01-appb-T000118
Figure JPOXMLDOC01-appb-T000118
Figure JPOXMLDOC01-appb-T000119
Figure JPOXMLDOC01-appb-T000119
Figure JPOXMLDOC01-appb-T000120
Figure JPOXMLDOC01-appb-T000120
Figure JPOXMLDOC01-appb-T000121
Figure JPOXMLDOC01-appb-T000121
 表中の略号を下記に表す。 The abbreviations in the table are shown below.
Figure JPOXMLDOC01-appb-C000122
Figure JPOXMLDOC01-appb-C000122
Figure JPOXMLDOC01-appb-C000123
Figure JPOXMLDOC01-appb-C000123
Figure JPOXMLDOC01-appb-C000124
Figure JPOXMLDOC01-appb-C000124
Figure JPOXMLDOC01-appb-C000125
Figure JPOXMLDOC01-appb-C000125
Figure JPOXMLDOC01-appb-C000126
Figure JPOXMLDOC01-appb-C000126
Figure JPOXMLDOC01-appb-C000127
Figure JPOXMLDOC01-appb-C000127
〔感光性樹脂組成物の調製〕
 下記表に示す成分を同表に示す溶媒に溶解させ、全固形分濃度25質量%とし、孔径0.1μmのポリテトラフルオロエチレン製カセット型フィルターにてろ過を行い、感光性樹脂組成物を調製した。表中において、各成分の固形分含有量を質量%として表す。
[Preparation of photosensitive resin composition]
The components shown in the table below are dissolved in the solvent shown in the table, the total solid content concentration is 25% by mass, and the mixture is filtered through a cassette filter made of polytetrafluoroethylene having a pore size of 0.1 μm to prepare a photosensitive resin composition. did. In the table, the solid content of each component is expressed as mass%.
<感光性樹脂組成物の経時安定性>
 実施例110の感光性樹脂組成物を室温で4週間経時した後、組成物の溶液を重DMSOに溶解してH-NMRスペクトルを測定し、アミドNHのピーク積分値からイミド化率を算出したところ、32%イミド化していた。実施例122の感光性樹脂組成物を室温で4週間経時した後、組成物の溶液を重DMSOに溶解してH-NMRスペクトルを測定し、アミドNHのピーク積分値からイミド化率を算出したところ、イミド化率は1%未満であった。
 実施例114の感光性樹脂組成物を室温で4週間経時したところ、粘度の低下が見られた。また、感光性樹脂組成物の酸価を測定したところ、酸価の低下も見られ、樹脂P-114の(a5-5)で表される構造を含む酸分解性基の分解が一部進行していた。実施例122の感光性樹脂組成物を室温で4週間経時したところ、粘度及び酸価の低下は見られなかった。
<Stability over time of photosensitive resin composition>
After aging the photosensitive resin composition of Example 110 at room temperature for 4 weeks, the solution of the composition was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the imidation ratio was calculated from the peak integral value of amide NH. As a result, it was 32% imidized. After aging the photosensitive resin composition of Example 122 for 4 weeks at room temperature, the solution of the composition was dissolved in deuterated DMSO, 1 H-NMR spectrum was measured, and the imidation ratio was calculated from the peak integral value of amide NH. As a result, the imidation ratio was less than 1%.
When the photosensitive resin composition of Example 114 was aged for 4 weeks at room temperature, a decrease in viscosity was observed. Further, when the acid value of the photosensitive resin composition was measured, a decrease in the acid value was also observed, and the decomposition of the acid-decomposable group including the structure represented by (a5-5) of the resin P-114 partially progressed. Was. When the photosensitive resin composition of Example 122 was aged at room temperature for 4 weeks, no decrease in viscosity or acid value was observed.
〔画像性能評価〕
 調製した感光性樹脂組成物を、4インチシリコンウエハ上にスピンコートし、ホットプレート上にて120℃3分間の予備乾燥を行い、膜厚5.0μmのフィルムを得た。次いでi線ステッパー露光装置FPA-3000i5+(Canon(株)製)にて、1~30μmのビアホール繰り返しパターンマスクを用いてパターン露光を行った。次いで120℃3分間加熱し、2.38質量%のTMAH水溶液にてパドル現像し、純水にてリンス処理を行った。その後100℃2分間ホットプレート上で加熱を行った。
(Image performance evaluation)
The prepared photosensitive resin composition was spin-coated on a 4 inch silicon wafer and pre-dried at 120 ° C. for 3 minutes on a hot plate to obtain a film having a thickness of 5.0 μm. Next, pattern exposure was performed using an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon, Inc.) using a 1-30 μm via hole repeating pattern mask. Subsequently, it was heated at 120 ° C. for 3 minutes, subjected to paddle development with a 2.38 mass% TMAH aqueous solution, and rinsed with pure water. Thereafter, heating was performed on a hot plate at 100 ° C. for 2 minutes.
<解像性>
 得られたパターン膜を測長SEM((株)日立製作所S-8840)により観察し、解像したビアホールの最小寸法が3μm未満をA、3μm以上5μm未満をB、5μm以上10μm未満をC、10μm以上をDとした。
<Resolution>
The obtained pattern film was observed with a length measuring SEM (Hitachi Ltd. S-8840), and the resolved via hole had a minimum dimension of less than 3 μm A, 3 μm to 5 μm B, 5 μm to 10 μm C 10 μm or more was designated as D.
<感度>
 得られたパターン膜を測長SEM((株)日立製作所S-8840)により観察し、最小寸法のビアホールが解像した露光量を感度とし、250mJ/cm未満をA、250mJ/cm以上500mJ/cm未満をB、500mJ/cm以上750mJ/cm未満をC、750mJ/cm以上をDとした。
<Sensitivity>
The obtained pattern film was observed with a length measurement SEM (Hitachi, Ltd. S-8840), and the exposure amount obtained by resolving the via hole having the smallest dimension was defined as sensitivity. A less than 250 mJ / cm 2 was A, 250 mJ / cm 2 or more. 500 mJ / cm 2 less than the B, 500mJ / cm 2 or more 750 mJ / cm 2 less than the C, and 750 mJ / cm 2 or more was D.
〔膜特性評価〕
 調製した感光性樹脂組成物を、4インチシリコンウエハ上にスピンコートし、ホットプレート上にて120℃3分間の予備乾燥を行い、膜厚5.0μmのフィルムを得た。次いで窒素条件下250℃60分間加熱硬化させポリイミド膜を得た。
<応力>
 キュア後の膜を薄膜ストレス測定装置(テンコール社製、FLX-2320型)にて、25℃における応力を測定した。応力の値が小きい程、ウェハ反り量が少ないことを意味する。
 下記表中、溶剤を併用する場合のかっこ内の数値は質量比を表す。
(Membrane property evaluation)
The prepared photosensitive resin composition was spin-coated on a 4 inch silicon wafer and pre-dried at 120 ° C. for 3 minutes on a hot plate to obtain a film having a thickness of 5.0 μm. Subsequently, the polyimide film was obtained by heat curing at 250 ° C. for 60 minutes under nitrogen.
<Stress>
The cured film was measured for stress at 25 ° C. with a thin film stress measuring device (FLX-2320, manufactured by Tencor). A smaller stress value means a smaller amount of wafer warpage.
In the following table, the numerical value in parentheses when using a solvent together represents a mass ratio.
Figure JPOXMLDOC01-appb-T000128
Figure JPOXMLDOC01-appb-T000128
Figure JPOXMLDOC01-appb-T000129
Figure JPOXMLDOC01-appb-T000129
Figure JPOXMLDOC01-appb-T000130
Figure JPOXMLDOC01-appb-T000130
Figure JPOXMLDOC01-appb-T000131
Figure JPOXMLDOC01-appb-T000131
 表中の略号を下記に表す。
〔酸発生剤〕
Abbreviations in the table are shown below.
[Acid generator]
Figure JPOXMLDOC01-appb-C000132
Figure JPOXMLDOC01-appb-C000132
〔増感剤〕 [Sensitizer]
Figure JPOXMLDOC01-appb-C000133
Figure JPOXMLDOC01-appb-C000133
〔熱酸発生剤〕 [Thermal acid generator]
Figure JPOXMLDOC01-appb-C000134
Figure JPOXMLDOC01-appb-C000134
 〔塩基性化合物〕
 DIA:2,6-ジイソプロピルアニリン
 PEA:N-フェニルジエタノールアミン
 DBU:1,8-ジアザビシクロ[5.4.0]ウンデカ-7-エン
 EOA:下記構造のアミン
[Basic compounds]
DIA: 2,6-diisopropylaniline PEA: N-phenyldiethanolamine DBU: 1,8-diazabicyclo [5.4.0] undec-7-ene EOA: amine having the following structure
Figure JPOXMLDOC01-appb-C000135
Figure JPOXMLDOC01-appb-C000135
〔界面活性剤〕
F176:メガファックF176(大日本インキ化学工業(株)製)
F475:メガファックF-475(大日本インキ化学工業(株)製) 
PF6320:(OMNOVA社製、フッ素系)
BYK307:(ビックケミー社製)
[Surfactant]
F176: Megafuck F176 (manufactured by Dainippon Ink & Chemicals, Inc.)
F475: Megafuck F-475 (Dainippon Ink Chemical Co., Ltd.)
PF6320: (made by OMNOVA, fluorine type)
BYK307: (Bic Chemie)
〔密着促進剤〕
GPTMS:3-グリシジロキシプロピルトリメトキシシラン
MAPTMS:3-メタクリロキシプロピルトリメトキシシラン
TESPEC:トリエトキシシリルプロピル エチルカーバメート
〔溶剤〕
GBL:γ-ブチロラクトン
NMP:N-メチルピロリドン
CX:シクロヘキサノン
CP:シクロヘプタノン
DMI:1,3-ジメチル-2-イミダゾリジノン
〔重合性化合物〕
DPHA:ジペンタエリスリトールヘキサアクリレート
[Adhesion promoter]
GPTMS: 3-glycidyloxypropyltrimethoxysilane MAPTMS: 3-methacryloxypropyltrimethoxysilane TESPEC: triethoxysilylpropyl ethyl carbamate [solvent]
GBL: γ-butyrolactone NMP: N-methylpyrrolidone CX: cyclohexanone CP: cycloheptanone DMI: 1,3-dimethyl-2-imidazolidinone [polymerizable compound]
DPHA: Dipentaerythritol hexaacrylate
 表5~8に示した結果から明らかなように、一般式(1)におけるRとして酸分解性基は有するもののRとして脂環基を有しない比較例1は、アルカリ現像液に対する溶解性が低く、解像性、感度等の画像性能について十分な結果がえられないことが分かる。また、応力も大きくウエハ反りが発生し得ることがわかる。
 脂環基をRとして脂環基を有するもののRとして酸分解性基を有しない比較例2は、潜像すら判然とせず、解像性、感度等の画像性能について十分な結果がえられないことが分かる。また、応力も大きくウエハ反りが発生し得ることがわかる。
 一般式(1)におけるRとして酸分解性基は有するもののRとして脂環基を有しない比較例3は、解像性、感度等の画像性能については比較的良好であるものの応力が大きくウエハ反りが発生し得ることがわかる。
 一方、一般式(1)の要件を満たす樹脂(a)を使用した実施例1~146は、解像性、感度等の画像性能に優れ、応力も小さくウエハ反りの発生も抑えられることがわかる。
As is apparent from the results shown in Tables 5 to 8, Comparative Example 1 having an acid-decomposable group as R 3 in the general formula (1) but not having an alicyclic group as R 2 has a solubility in an alkali developer. It can be seen that sufficient results cannot be obtained with respect to image performance such as resolution and sensitivity. It can also be seen that the wafer is warped due to the large stress.
Comparative Example 2 having an alicyclic group as R 2 but not having an acid-decomposable group as R 3 does not reveal even a latent image, and gives satisfactory results for image performance such as resolution and sensitivity. I can't understand. It can also be seen that the wafer is warped due to the large stress.
In Comparative Example 3 having an acid-decomposable group as R 3 in the general formula (1) but not having an alicyclic group as R 2 , the image performance such as resolution and sensitivity is relatively good, but the stress is large. It can be seen that wafer warpage can occur.
On the other hand, Examples 1 to 146 using the resin (a) satisfying the requirement of the general formula (1) are excellent in image performance such as resolution and sensitivity, have small stress, and can suppress the occurrence of wafer warpage. .
 本発明によれば、半導体装置の表面保護膜、層間絶縁膜、表示デバイス用の層間絶縁膜として好適に使用され得、解像性及び感度に優れたリソグラフィー性能を有し、低温キュアにおける低応力特性に優れ、ウエハ反りを防止する硬化レリーフパターンを形成することができる、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び該硬化レリーフパターンを含む半導体装置を提供することができる。 According to the present invention, it can be suitably used as a surface protective film for semiconductor devices, an interlayer insulating film, an interlayer insulating film for display devices, has lithography performance with excellent resolution and sensitivity, and has low stress in low-temperature curing. Provided are a relief pattern forming material, a photosensitive film, a polyimide film, a cured relief pattern, a manufacturing method thereof, and a semiconductor device including the cured relief pattern, which have excellent characteristics and can form a cured relief pattern that prevents warpage of the wafer. can do.
 本発明を詳細にまた特定の実施態様を参照して説明したが、本発明の精神と範囲を逸脱することなく様々な変更や修正を加えることができることは当業者にとって明らかである。
 本出願は、2011年7月29日出願の日本特許出願(特願2011-167622)及び2012年3月23日出願の日本特許出願(特願2012-068197)に基づくものであり、その内容はここに参照として取り込まれる。
Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on a Japanese patent application filed on July 29, 2011 (Japanese Patent Application No. 2011-167622) and a Japanese patent application filed on March 23, 2012 (Japanese Patent Application No. 2012-068197). Incorporated herein by reference.

Claims (24)

  1. (a)下記一般式(1)で表される繰り返し単位を有する樹脂、及び
    (b)活性光線又は放射線の照射により酸を発生する化合物を含有する感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000001

     上記一般式(1)中、
     Rは、4価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
     Rは、2価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
     但し複数のRのうち少なくとも1つは脂環基を有する2価の有機基である。
     Rは、各々独立に、水素原子又は有機基を表す。
     但し複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
    (A) A photosensitive resin composition comprising a resin having a repeating unit represented by the following general formula (1), and (b) a compound that generates an acid upon irradiation with actinic rays or radiation.
    Figure JPOXMLDOC01-appb-C000001

    In the general formula (1),
    R 1 represents a tetravalent organic group. Several R < 1 > may mutually be same or different.
    R 2 represents a divalent organic group. A plurality of R 2 may being the same or different.
    However, at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
    R 3 each independently represents a hydrogen atom or an organic group.
    However, at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
  2.  前記一般式(1)で表される繰り返し単位を有する樹脂(a)が、下記一般式(2)で表される繰り返し単位と、下記一般式(3)で表される繰り返し単位とを有する樹脂である、請求項1に記載の感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000002

     上記一般式(2)中、
     R’は、前記一般式(1)におけるRと同義である。
     R’は、前記一般式(1)におけるRと同義である。
     但し複数の-CO’のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
     Rは、脂環基を有する2価の有機基である。
     上記一般式(3)中、
     R”は、前記一般式(1)におけるRと同義である。
     R”は、前記一般式(1)におけるRと同義である。
     但し複数の-CO”のうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
     Rは、Rとは異なる2価の有機基である。
    Resin in which the resin (a) having a repeating unit represented by the general formula (1) has a repeating unit represented by the following general formula (2) and a repeating unit represented by the following general formula (3) The photosensitive resin composition according to claim 1, wherein
    Figure JPOXMLDOC01-appb-C000002

    In the general formula (2),
    R 1 'has the same meaning as R 1 in the general formula (1).
    R 3 'has the same meaning as R 3 in Formula (1).
    However, at least one of the plurality of —CO 2 R 3 ′ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
    R 4 is a divalent organic group having an alicyclic group.
    In the general formula (3),
    R 1 "has the same meaning as R 1 in the general formula (1).
    R 3 "has the same meaning as R 3 in Formula (1).
    However, at least one of the plurality of —CO 2 R 3 ″ is a group that decomposes by the action of an acid to generate an alkali-soluble group.
    R 5 is a divalent organic group different from R 4 .
  3.  前記一般式(3)におけるRが芳香族基を有する2価の基である、請求項2に記載の感光性樹脂組成物。 Wherein R 5 in the general formula (3) is a divalent group having an aromatic group, the photosensitive resin composition of claim 2.
  4.  前記一般式(3)におけるRが下記式のいずれかで表される2価の基である、請求項3に記載の感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000003

     上記式中、各芳香環の水素原子が、各々独立に、フッ素原子、塩素原子、臭素原子、メチル基、メトキシ基、シアノ基、フェニル基及びトリフルオロメチル基からなる群より選ばれた少なくとも1種の原子又は基によって置換されていてもよい。
    Formula R 5 in (3) is a divalent group represented by any one of the following formulas, the photosensitive resin composition of claim 3.
    Figure JPOXMLDOC01-appb-C000003

    In the above formula, at least one hydrogen atom of each aromatic ring is independently selected from the group consisting of fluorine atom, chlorine atom, bromine atom, methyl group, methoxy group, cyano group, phenyl group and trifluoromethyl group. It may be substituted by a species atom or group.
  5.  前記一般式(1)における-CO、前記一般式(2)における-CO’又は前記一般式(3)における-CO”の熱分解温度が100~220℃である、請求項1~4のいずれか1項に記載の感光性樹脂組成物。 The thermal decomposition temperature of —CO 2 R 3 in the general formula (1), —CO 2 R 3 ′ in the general formula (2) or —CO 2 R 3 ″ in the general formula (3) is 100 to 220 ° C. The photosensitive resin composition according to any one of claims 1 to 4.
  6.  前記一般式(1)における-CO、前記一般式(2)における-CO’又は前記一般式(3)における-CO”についての酸の作用により分解しアルカリ可溶性基を生じる基が、カルボキシル基の水素原子が下記一般式(III)で表される基で置換されたエステル基である、請求項1~5のいずれか1項に記載の感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000004

     上記一般式中、
     Raは、水素原子、アルキル基、シクロアルキル基、アリール基又はアラルキル基を表す。
     Rbは、単結合又は2価の連結基を表す。
     Qは、アルキル基、ヘテロ原子を含んでいてもよい脂環基、又はヘテロ原子を含んでいてもよい芳香環基を表す。
     Ra、Rb及びQの少なくとも2つは、互いに結合して環を形成していてもよい。
    -CO 2 R 3 in the general formula (1), decomposing the alkali-soluble by an acid action of the -CO 2 R 3 "in -CO 2 R 3 'or the general formula (3) in the general formula (2) 6. The photosensitive resin composition according to claim 1, wherein the group that generates a group is an ester group in which a hydrogen atom of a carboxyl group is substituted with a group represented by the following general formula (III): .
    Figure JPOXMLDOC01-appb-C000004

    In the above general formula,
    Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
    Rb represents a single bond or a divalent linking group.
    Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom.
    At least two of Ra, Rb and Q may be bonded to each other to form a ring.
  7.  前記一般式(III)におけるRaが、下記一般式(IV)又は(V)で表される基である、請求項6に記載の感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000005

     上記一般式中、
     Rc、Rd、Re、Rf及びRgは、各々独立に、アルキル基、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子を表し、Rc及びRdが互いに結合して環を形成していてもよく、Re、Rf及びRgの少なくとも2つが互いに結合して環を形成していてもよい。
    The photosensitive resin composition according to claim 6, wherein Ra in the general formula (III) is a group represented by the following general formula (IV) or (V).
    Figure JPOXMLDOC01-appb-C000005

    In the above general formula,
    Rc, Rd, Re, Rf and Rg each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group or a halogen atom. Rc and Rd may be bonded to each other to form a ring, or at least two of Re, Rf and Rg may be bonded to each other to form a ring.
  8.  前記一般式(IV)におけるRc及びRdの少なくとも1つが、シクロアルキル基、アリール基、アラルキル基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アリールオキシカルボニル基、シアノ基又はハロゲン原子である、請求項7に記載の感光性樹脂組成物。 At least one of Rc and Rd in the general formula (IV) is a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom. Item 8. The photosensitive resin composition according to Item 7.
  9.  前記一般式(IV)におけるRc及びRdの少なくとも1つが、アリール基である、請求項8に記載の感光性樹脂組成物。 The photosensitive resin composition according to claim 8, wherein at least one of Rc and Rd in the general formula (IV) is an aryl group.
  10.  前記一般式(III)におけるRa、Rb及びQの少なくとも1つが、電子求引性基ないしは電子求引性基を有する基である、請求項6に記載の感光性樹脂組成物。 The photosensitive resin composition according to claim 6, wherein at least one of Ra, Rb and Q in the general formula (III) is an electron-withdrawing group or a group having an electron-withdrawing group.
  11.  前記一般式(1)におけるRが単環式又は縮合多環式の脂肪族基又は芳香族基を有する4価の連結基である、請求項1に記載の感光性樹脂組成物。 The photosensitive resin composition according to claim 1, wherein R 1 in the general formula (1) is a tetravalent linking group having a monocyclic or condensed polycyclic aliphatic group or aromatic group.
  12.  前記一般式(1)におけるRが、脂環基を有する2価の基、芳香族基を有する2価の基又はケイ素原子を含有する2価の基である、請求項1又は11に記載の感光性樹脂組成物。 The R 2 in the general formula (1) is a divalent group having an alicyclic group, a divalent group having an aromatic group, or a divalent group containing a silicon atom. Photosensitive resin composition.
  13.  前記樹脂(a)の質量平均分子量が20万以下である、請求項1~12のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 12, wherein the resin (a) has a mass average molecular weight of 200,000 or less.
  14.  (c)塩基性化合物を更に含有する、請求項1~13のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 13, further comprising (c) a basic compound.
  15.  前記化合物(b)が、オキシム化合物である、請求項1~14のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 14, wherein the compound (b) is an oxime compound.
  16.  (f)密着促進剤を更に含有する、請求項1~15のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 15, further comprising (f) an adhesion promoter.
  17.  ポジ型現像用である、請求項1~16のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 16, which is for positive development.
  18.  請求項1~16のいずれか1項に記載の感光性樹脂組成物であるパターン形成材料。 A pattern forming material, which is the photosensitive resin composition according to any one of claims 1 to 16.
  19.  請求項1~16のいずれか1項に記載の感光性樹脂組成物により形成される感光性膜。 A photosensitive film formed from the photosensitive resin composition according to any one of claims 1 to 16.
  20.  請求項1~16のいずれか1項に記載の感光性樹脂組成物を加熱処理して得られるポリイミド膜。 A polyimide film obtained by heat-treating the photosensitive resin composition according to any one of claims 1 to 16.
  21.  (ア)請求項19に記載の感光性膜を基板上に形成する工程、
     (イ)該感光性膜を活性光線又は放射線で露光する工程、
     (ウ)該感光性膜の露光された部分を水性アルカリ現像液で除去するように現像する工程、及び
     (エ)得られたレリーフパターンを加熱処理する工程を有する硬化レリーフパターンの製造方法。
    (A) forming the photosensitive film according to claim 19 on a substrate;
    (A) a step of exposing the photosensitive film with actinic rays or radiation;
    (C) A process for developing the photosensitive film so as to remove the exposed portion with an aqueous alkaline developer, and (d) a method for producing a cured relief pattern comprising a step of heat-treating the obtained relief pattern.
  22.  請求項21に記載の製造方法により得られた硬化レリーフパターン。 A cured relief pattern obtained by the production method according to claim 21.
  23.  請求項22に記載の硬化レリーフパターンを具備する半導体装置。 A semiconductor device comprising the cured relief pattern according to claim 22.
  24.  下記一般式(1)で表される繰り返し単位を有する樹脂。
    Figure JPOXMLDOC01-appb-C000006

     上記一般式(1)中、
     Rは、4価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
     Rは、2価の有機基を表す。複数のRは互いに同一であっても異なっていてもよい。
     但し複数のRのうち少なくとも1つは脂環基を有する2価の有機基である。
     Rは、各々独立に、水素原子又は有機基を表す。
     但し複数の-COのうち少なくとも1つは、酸の作用により分解しアルカリ可溶性基を生じる基である。
    Resin which has a repeating unit represented by following General formula (1).
    Figure JPOXMLDOC01-appb-C000006

    In the general formula (1),
    R 1 represents a tetravalent organic group. Several R < 1 > may mutually be same or different.
    R 2 represents a divalent organic group. A plurality of R 2 may being the same or different.
    However, at least one of the plurality of R 2 is a divalent organic group having an alicyclic group.
    R 3 each independently represents a hydrogen atom or an organic group.
    However, at least one of the plurality of —CO 2 R 3 is a group that decomposes by the action of an acid to generate an alkali-soluble group.
PCT/JP2012/067852 2011-07-29 2012-07-12 Photosensitive resin composition, material for forming relief pattern, photosensitive film, polyimide film, cured relief pattern and method for producing same, and semiconductor device WO2013018524A1 (en)

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