WO2013014321A3 - Magnetometer mems cmos device including a multiwire compass - Google Patents

Magnetometer mems cmos device including a multiwire compass Download PDF

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Publication number
WO2013014321A3
WO2013014321A3 PCT/ES2012/070569 ES2012070569W WO2013014321A3 WO 2013014321 A3 WO2013014321 A3 WO 2013014321A3 ES 2012070569 W ES2012070569 W ES 2012070569W WO 2013014321 A3 WO2013014321 A3 WO 2013014321A3
Authority
WO
WIPO (PCT)
Prior art keywords
resonating element
magnetometer
shielding electrode
multiwire
compass
Prior art date
Application number
PCT/ES2012/070569
Other languages
Spanish (es)
French (fr)
Other versions
WO2013014321A8 (en
WO2013014321A2 (en
Inventor
Josep MONTANYÀ SILVESTRE
Juan José VALLE FRAGA
Laura BARRACHINA SARALEGUI
Original Assignee
Baolab Microsystems Sl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Baolab Microsystems Sl filed Critical Baolab Microsystems Sl
Publication of WO2013014321A2 publication Critical patent/WO2013014321A2/en
Publication of WO2013014321A3 publication Critical patent/WO2013014321A3/en
Publication of WO2013014321A8 publication Critical patent/WO2013014321A8/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/038—Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G01R33/0283—Electrodynamic magnetometers in which a current or voltage is generated due to relative movement of conductor and magnetic field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G01R33/0286—Electrodynamic magnetometers comprising microelectromechanical systems [MEMS]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

The systems and methods described provide for a magnetometer device that includes a resonating element having an inner wire enclosed in a shielding electrode. The shielding electrode decreases the effect of interference on the resonating element. A sensing electrode is disposed proximate to the resonating element. The device further includes a source for generating current that is connected to the resonating element. The current when applied through the inner wire causes a displacement of the resonating element. The magnetometer device measures a magnetic field of the resonating element as a capacitance variation between the shielding electrode and the sensing electrode. The systems and methods herein provide for an accelerometer device that includes a resonating element having an inner core of dielectric material enclosed in a shielding electrode. The accelerometer device measures an acceleration of the resonating element as a capacitance variation between the shielding electrode and the sensing electrode.
PCT/ES2012/070569 2011-07-25 2012-07-25 Methods and systems for mems cmos devices including a multiwire compass WO2013014321A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201161511324P 2011-07-25 2011-07-25
US61/511,324 2011-07-25
US201261606091P 2012-03-02 2012-03-02
US61/606,091 2012-03-02
US201261646664P 2012-05-14 2012-05-14
US61/646,664 2012-05-14

Publications (3)

Publication Number Publication Date
WO2013014321A2 WO2013014321A2 (en) 2013-01-31
WO2013014321A3 true WO2013014321A3 (en) 2013-08-08
WO2013014321A8 WO2013014321A8 (en) 2014-04-17

Family

ID=47018233

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/ES2012/070569 WO2013014321A2 (en) 2011-07-25 2012-07-25 Methods and systems for mems cmos devices including a multiwire compass

Country Status (2)

Country Link
TW (1) TW201319604A (en)
WO (1) WO2013014321A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202142481A (en) 2020-01-08 2021-11-16 西班牙商奈努勝公司 Mems device built using the beol metal layers of a solid state semiconductor process

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040158439A1 (en) * 2002-12-10 2004-08-12 Kim Kyoung Soo Magnetic field and acceleration sensor and method for simultaneously detecting magnetism and acceleration
US20060076947A1 (en) * 2004-06-07 2006-04-13 General Electric Company Micro-electromechanical system (MEMS) based current & magnetic field sensor having improved sensitivities
US20070030001A1 (en) * 2003-09-23 2007-02-08 Brunson Kevin M Resonant magnetometer device
US7639104B1 (en) * 2007-03-09 2009-12-29 Silicon Clocks, Inc. Method for temperature compensation in MEMS resonators with isolated regions of distinct material
US20100032789A1 (en) * 2008-08-07 2010-02-11 Infineon Technologies Ag Passive temperature compensation of silicon mems devices
US20100295138A1 (en) * 2009-05-20 2010-11-25 Baolab Microsystems Sl Methods and systems for fabrication of mems cmos devices
EP2267893A1 (en) * 2009-06-08 2010-12-29 STmicroelectronics SA Bulk acoustic wave resonator with partially filled cavities
DE102009046515A1 (en) * 2009-11-09 2011-05-12 Robert Bosch Gmbh Magnetometer e.g. inclination sensor, for electronic compass to detect geomagnetic field, has oscillating structure comprising electrical line, and detector for determining tilting of oscillating structure with respect to substrate
EP2333572A1 (en) * 2009-12-10 2011-06-15 STMicroelectronics S.r.l. Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040158439A1 (en) * 2002-12-10 2004-08-12 Kim Kyoung Soo Magnetic field and acceleration sensor and method for simultaneously detecting magnetism and acceleration
US20070030001A1 (en) * 2003-09-23 2007-02-08 Brunson Kevin M Resonant magnetometer device
US20060076947A1 (en) * 2004-06-07 2006-04-13 General Electric Company Micro-electromechanical system (MEMS) based current & magnetic field sensor having improved sensitivities
US7639104B1 (en) * 2007-03-09 2009-12-29 Silicon Clocks, Inc. Method for temperature compensation in MEMS resonators with isolated regions of distinct material
US20100032789A1 (en) * 2008-08-07 2010-02-11 Infineon Technologies Ag Passive temperature compensation of silicon mems devices
US20100295138A1 (en) * 2009-05-20 2010-11-25 Baolab Microsystems Sl Methods and systems for fabrication of mems cmos devices
EP2267893A1 (en) * 2009-06-08 2010-12-29 STmicroelectronics SA Bulk acoustic wave resonator with partially filled cavities
DE102009046515A1 (en) * 2009-11-09 2011-05-12 Robert Bosch Gmbh Magnetometer e.g. inclination sensor, for electronic compass to detect geomagnetic field, has oscillating structure comprising electrical line, and detector for determining tilting of oscillating structure with respect to substrate
EP2333572A1 (en) * 2009-12-10 2011-06-15 STMicroelectronics S.r.l. Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DE LOS SANTOS H J ET AL: "RF MEMS for ubiquitous wireless connectivity: Part 1 - fabrication", IEEE MICROWAVE MAGAZINE, IEEESERVICE CENTER, PISCATAWAY, NJ, US, vol. 5, no. 4, 1 December 2004 (2004-12-01), pages 36 - 49, XP011124827, ISSN: 1527-3342, DOI: 10.1109/MMW.2004.1380277 *
FRANKLIN C CHIANG ET AL: "Microfabricated Flexible Electrodes for Multiaxis Sensing in the Large Plasma Device at UCLA", IEEE TRANSACTIONS ON PLASMA SCIENCE, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 39, no. 6, 1 June 2011 (2011-06-01), pages 1507 - 1515, XP011355079, ISSN: 0093-3813, DOI: 10.1109/TPS.2011.2129601 *
FUJIMORI T ET AL: "Above-IC integration of capacitive pressure sensor fabricated with CMOS interconnect processes", MICRO ELECTRO MECHANICAL SYSTEMS, 2007. MEMS. IEEE 20TH INTERNATIONAL CONFERENCE ON, IEEE, PI, 1 January 2007 (2007-01-01), pages 43 - 46, XP031203762, ISBN: 978-1-4244-0950-1, DOI: 10.1109/MEMSYS.2007.4433008 *

Also Published As

Publication number Publication date
TW201319604A (en) 2013-05-16
WO2013014321A8 (en) 2014-04-17
WO2013014321A2 (en) 2013-01-31

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