WO2013013588A1

WO2013013588A1 - Chamber device and plasma processing apparatus having same

Info

Publication number: WO2013013588A1
Application number: PCT/CN2012/078805
Authority: WO
Inventors: 张风港
Original assignee: 北京北方微电子基地设备工艺研究中心有限责任公司
Priority date: 2011-07-22
Filing date: 2012-07-18
Publication date: 2013-01-31
Also published as: CN102888596A; CN102888596B

Abstract

Proposed are a chamber device and a plasma processing apparatus having same. The chamber device comprises: a chamber body with a chamber defined therein; n radio frequency electrode plates, wherein each radio frequency electrode plate is slantwise provided inside the chamber relative to the horizontal direction and is insulated from the chamber body; a carrier plate unit connected to the ground and including n carrier plates, wherein the carrier plate is provided inside the chamber and the quantity thereof is the same as the quantity of the radio frequency electrode plates, the carrier plates and the radio frequency electrode plates are provided substantially in parallel in one-to-one correspondence, and each carrier plate has a wafer bearing surface provided opposite to the radio frequency electrode plate and used for bearing a wafer, wherein n is an integer greater than or equal to 1. The chamber device according to the present invention can significantly reduce or even completely avoid particles produced in the process and particles peeling off from the radio frequency electrode plates from dropping on the surface of the wafer after operating for a long time, and therefore, the quality of the processed wafer can be improved significantly. Moreover, the entire chamber device is compact in structure and has a high capacity.

Description

Chamber device and plasma processing apparatus having the same

The present invention relates to a chamber device and a plasma processing apparatus having the same. Background technique

With the continuous development of plasma technology, plasma devices have been widely used in manufacturing manufacturing processes for integrated circuits (IC) or photovoltaic (PV) products.

According to the different film formation methods, the flat-plate plasma enhanced chemical vapor deposition (PECVD) equipment used in the manufacturing process of photovoltaic products is mainly divided into direct method and indirect method. Both devices are carried by flat-plate carrier. Place the silicon wafer.

Among them, the indirect method carrier board is not grounded, only plays a role of transmission, the electrode plate is connected to high frequency or microwave, and the ion discharge space is combined into an anti-reflection film and deposited on the surface of the silicon wafer by diffusion. The indirect method is mostly a lower coating method. When the film is coated, the silicon wafer is placed on the top of the chamber, the plasma source is below, and the film formation surface is facing downward. Although the equipment has relatively high productivity, it can only achieve surface passivation, so the limitation is A further increase in short-circuit current.

The carrier of the direct method is located between the upper and lower electrodes, or directly grounded as the lower plate, and the upper electrode is connected to the intermediate frequency or the radio frequency to form a plasma between the upper electrode and the carrier. Although the direct method has a higher short-circuit current and a relatively dense film formation than the indirect method, the direct method is used to ground the carrier plate, and the film-forming surface faces upward, which is generated during the process. Particles, as well as particles that peel off the upper electrode after prolonged operation, can fall onto the film-forming surface, affecting the appearance and quality of the cell.

Figure 4 is a schematic diagram of a flat-plate direct-coating PECVD equipment commonly used in the production of crystalline silicon solar cells. The process gas enters the chamber through the air inlet hole on the upper plate 210', the RF power source 900' supplies energy to the inside of the chamber through the upper plate 210', and the lower plate 300' is directly grounded as a carrier of the wafer, or may be additionally Connected to a radio frequency power source (not shown), an RF electric field is generated between the upper plate 210' and the lower plate 300' to excite the process gas into a plasma, thereby aligning the crystal placed on the lower plate 300'. The sheet is subjected to plasma treatment, and the reacted gas is discharged outside the chamber through the exhaust port 400'.

According to the above-mentioned conventional flat-plate direct-coating PECVD apparatus, particles generated during the coating process and particles peeled off by the upper electrode after long-term operation may fall onto the film-forming surface of the cell sheet, thereby affecting the cell sheet. Appearance and quality. In addition, in order to obtain a large capacity, it is generally required to place tens or even hundreds of solar cells on the carrier board, which will result in a large area of the carrier, which results in a large footprint and maintenance difficulties. Moreover, due to the limitation of raw materials and processing capacity, the carrier plate and the cavity cannot be increased indefinitely, which results in an upper limit on the increase in productivity. Summary of the invention

The present invention aims to solve at least one of the above technical problems.

Accordingly, it is an object of the present invention to provide a chamber apparatus having high productivity and high wafer processing quality.

Another object of the present invention is to provide a plasma processing apparatus.

A chamber device according to an embodiment of the present invention includes: a chamber body, wherein the chamber body defines a chamber; n radio frequency electrode plates, each of which is disposed obliquely with respect to a horizontal direction Inside the chamber and insulated from the chamber body; and a carrier unit, the carrier unit is grounded and includes n carrier plates, the carrier is disposed in the chamber and the number thereof is opposite to the RF electrode plate The number of the carrier plates is corresponding to and substantially parallel to the RF electrode plates, and each of the carrier plates has a wafer bearing surface opposite to the corresponding RF electrode plates and used for carrying the wafers. , n is an integer greater than or equal to 1.

Wherein, the n carrier plates form the carrier unit around the circumferential direction of the chamber, and the carrier unit has a hollow frame structure.

Wherein, the carrier unit and the chamber body have a trapezoidal annular structure or a rectangular annular structure in a direction parallel to the central axis of the chamber.

Wherein, a fixing member for fixing the wafer is provided on the wafer carrying surface of each of the carrier plates. Wherein, one end of the fixing member adjacent to the carrier plate is provided with a sloped surface.

The chamber apparatus of the embodiments of the present invention may further include a transmission disposed within the chamber, the transmission being located below the carrier unit for moving the carrier unit into and out of the chamber.

The transmission device includes: a transmission shaft, the transmission shaft is disposed in the chamber, and two ends of the transmission shaft respectively extend to the outside of the cavity; a magnetic fluid bearing, the magnetic fluid bearing is separately provided At both ends of the transmission shaft for rotatably supporting the transmission shaft and sealing the transmission shaft and the chamber body; a transmission wheel, the transmission wheel is mounted on the transmission shaft and supported The carrier unit; and a driving device coupled to the drive shaft to drive the drive shaft and the transmission wheel to rotate together to move the carrier unit into and out of the chamber.

In the chamber device of the embodiment of the invention, the number of the RF electrode plates and the carrier plates are each 2 . The first side wall of the chamber body is provided with a first opening, and the second side wall of the chamber body is provided with a second opening, and the first opening is covered by the first side cover. The second opening is covered by the second side cover, wherein the first RF electrode plate is disposed in the first side cover and insulated from the first side cover by a first isolation pad, and the second RF electrode plate is disposed The second side cover is insulated within the second side cover and by the second spacer.

Wherein the first side cover is pivotable relative to the chamber body to open and close the first opening, and the second side cover is pivotable relative to the chamber body to open and close Said second opening.

Further, in order to achieve the above object, a plasma processing apparatus according to an embodiment of the second aspect of the present invention includes: a chamber device which is a chamber device according to the above embodiments of the present invention; a radio frequency power source, the radio frequency a power source is connected to each of the RF electrode plates in the chamber device; and n heating elements, n is an integer greater than or equal to 1, the number of the heating elements being the same as the number of the RF electrode plates, the heating element Corresponding to the RF electrode plate - and disposed on the outside of the RF electrode plate corresponding thereto.

Wherein, on the outer side of each of the heating elements, heat is prevented from being generated by the heating element External radiation insulation board.

The plasma processing apparatus of the embodiment of the present invention further includes a grounding member mounted on an outer surface of the top and bottom walls of the chamber body and extending into the chamber for respectively loading the load The top and bottom walls of the panel unit are grounded.

The plasma processing apparatus of the embodiment of the present invention is a PECVD apparatus.

The additional aspects and advantages of the invention will be set forth in part in the description which follows. DRAWINGS

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from

1 is a schematic view showing a mounted state of a plasma processing apparatus according to an embodiment of the present invention; FIG. 2 is a schematic exploded view of a plasma processing apparatus according to an embodiment of the present invention; FIG. 3 is a plasma processing apparatus according to an embodiment of the present invention. Partial schematic view of the wafer carrying surface of the second carrier of the carrier unit in the middle; and

4 is a schematic structural view of a conventional plasma processing apparatus. detailed description

The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.

In the description of the present invention, it is to be understood that the terms "center", "vertical", "transverse", "upper", "lower", "previous", "rear", "left", "right", " The orientation or positional relationship of the indications "upright", "horizontal", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the drawings, for convenience of description of the present invention and simplification. Describe, or imply, that the device or component referred to must have a specific orientation, The construction and operation in a particular orientation are not to be construed as limiting the invention. Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that the terms "installation", "connected", and "connected" are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or connected in one piece; can be directly connected, indirectly connected through an intermediate medium, or connected inside the two elements. The specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.

It is to be understood that the chamber device according to an embodiment of the present invention may be, for example, a chamber device in a plasma processing apparatus.

The chamber device provided by the embodiment of the present invention may include: a chamber body defining a chamber in the chamber; and n electrode plates connected to the RF power source (hereinafter referred to as RF electrode plates) are disposed in the chamber. An RF electrode plate is insulated from the chamber body and disposed obliquely with respect to a horizontal direction (for example, perpendicular to a horizontal plane or at an angle to a horizontal plane); and a carrier unit that is grounded and includes n carrier plates, The carrier is disposed in the chamber and has the same number as the number of the radio frequency electrode plates, and the carrier plate corresponds to the radio frequency electrode plate, and each of the carrier plate bearing surfaces, wherein n is an integer greater than or equal to 1.

In the chamber device provided by the embodiment of the invention, since the RF electrode plate and the carrier plate are both inclined with respect to the horizontal direction, the particles generated during the process and the RF electrode plate after long-term operation can be significantly reduced or even completely avoided. The deposited particles are peeled off onto the wafer carrying surface of the carrier to avoid contamination of the wafer, which in turn can significantly improve the quality of the processed wafer. Moreover, when n is an integer greater than 1, since the n radio frequency electrodes and n carrier plates are simultaneously provided, the entire chamber device structure is more compact, and thus is substantially the same as compared with the existing chamber device. In the case of an area, the chamber device provided by the embodiment of the present invention can significantly increase the productivity. In other words, the chamber device provided by the embodiment of the present invention is more compact and more convenient to maintain in the case of the same capacity as compared with the prior art. In the chamber device provided by the embodiment of the present invention, the n carrier plates form the carrier unit around the circumferential direction of the chamber, and the carrier unit has a hollow frame structure, thereby reducing the use as a ground electrode. The heat capacity of the carrier unit simultaneously reduces the weight of the device.

Optionally, the carrier unit and the chamber body have a trapezoidal annular structure or a rectangular annular structure in a direction parallel to a central axis of the chamber. In the case of a trapezoidal annular structure, the carrier plate is disposed obliquely to the bottom edge of the chamber (i.e., horizontally), preferably such that the carrier plate is at an angle of between 85 and 90 degrees from the bottom edge of the chamber. When in a rectangular annular configuration, the carrier is perpendicular to the bottom edge of the chamber.

In the chamber device provided by the embodiment of the present invention, a fixing member for fixing the wafer is provided on the wafer bearing surface of each of the carrier plates. Preferably, one end of the fixing member adjacent to the carrier is provided with a slope. Thereby, the wafer can be better contacted with the carrier, thereby improving the stability of the wafer during transport and improving the quality of the film forming process on the wafer surface.

The chamber device provided by the embodiment of the present invention further includes a transmission device disposed in the chamber, the transmission device being located below the carrier unit for moving the carrier unit into and out of the chamber . And the transmission device may include: a transmission shaft, the transmission shaft is disposed in the chamber, and two ends of the transmission shaft respectively extend to the outside of the cavity; a magnetic fluid bearing, the magnetic fluid bearing is separately provided At both ends of the transmission shaft for rotatably supporting the transmission shaft and sealing the transmission shaft and the chamber body; a transmission wheel, the transmission wheel is mounted on the transmission shaft and supported The carrier unit; and a driving device coupled to the drive shaft to drive the drive shaft and the transmission wheel to rotate together to move the carrier unit into and out of the chamber. By means of the transmission, the carrier unit can be conveniently moved into and out of the chamber while achieving a seal within the chamber.

A chamber device in accordance with an embodiment of the present invention will now be described with reference to Figs.

The chamber device according to an embodiment of the present invention includes a chamber body 100, a first RF electrode plate 210, a second RF electrode plate 220, and a carrier unit 300.

Specifically, a chamber C is defined within the chamber body 100. The first RF electrode plate 210 and the second RF electrode plate 220 are respectively disposed on the first side in the lateral direction of the chamber body 100 (ie, the left side of FIG. 1) And the second side (ie, the right side of FIG. 1) and exposed to the chamber C, the first RF electrode plate 210 and the second RF electrode plate 220 are insulated from the chamber body 100, respectively. The carrier unit 300 is disposed in the chamber C to serve as a ground electrode plate, and the carrier unit 300 has a first carrier plate disposed opposite to the first RF electrode plate 210 and the second RF electrode plate 220, respectively, for carrying the wafer 409. The wafer carrying surface 310 and the wafer carrying surface 320 of the second carrier.

According to the chamber device of the above embodiment of the present invention, since the first RF electrode plate 210 and the second RF electrode plate 220 are respectively disposed on the first side and the second side in the lateral direction of the chamber body 100 (ie, the first RF electrode plate) The 210 and the second RF electrode plate 220 are not in the horizontal plane, and the first of the first RF electrode plate 210 and the second RF electrode plate 220, which serves as the ground electrode, is used to carry the wafer 409. The wafer carrying surface 310 of one carrier and the wafer carrying surface 320 of the second carrier are also not in a horizontal plane (for example, perpendicular to a horizontal plane or at an angle to a horizontal plane), which can significantly reduce or even completely avoid particles generated during the process, And after the long-term operation, the particles deposited on the first RF electrode plate 210 and the second RF electrode plate 220 are peeled off to the surface of the wafer 409, and the structural design is such that most or even all of the particles are dropped to the bottom of the chamber C, so that the particles can be significantly The quality of the processed wafer 409 is improved. In addition, since the first RF electrode 210 and the second RF electrode 220 are provided at the same time, the entire chamber device structure is more compact, and thus can be compared with the existing chamber device under substantially the same floor space. Significantly increase production capacity. In addition, with the same capacity, the equipment is more compact and easier to maintain.

In order to reduce the heat capacity of the carrier unit 300 serving as a ground electrode while achieving weight reduction of the apparatus, the carrier unit 300 may be a hollow frame.

Optionally, the carrier unit 300 and the chamber body 100 have a trapezoidal annular structure (as shown in FIGS. 1 and 2) or a rectangular annular structure in a direction parallel to the central axis of the chamber. (Not shown. At this time, the first carrier and the second carrier of the carrier unit 300 are perpendicular to the horizontal plane).

Preferably, the angle between the side of the trapezoidal annular section and the bottom edge is between 85 and 90, whereby the particles falling on the surface of the wafer 409 can be greatly reduced, and the wafer 409 can also be gravity-receiving. Keeping in close contact with the respective wafer bearing surfaces of the carrier unit 300 (ie, the grounding plate), Thereby, it is beneficial to improve the process quality of the wafer.

In one embodiment of the present invention, as shown in FIG. 2, a first opening is disposed on a first side of the chamber body 100, and a second opening is disposed on a second side of the chamber body 100, the first opening Covered by the first side cover 110, the second opening is covered by the second side cover 120, wherein the first RF electrode plate 210 is disposed in the first side cover 110 and passes through the first isolation pad 410 and the first side cover The first RF electrode plate 220 is disposed in the second side cover 120 and insulated from the second side cover 120 by the second isolation pad 420. Therefore, as shown in FIG. 2, when the maintenance of the first RF electrode plate 210 and the second RF electrode plate 220 is required, the first side cover 110 and the second side cover 120 need to be opened separately for maintenance. Make maintenance more convenient.

Further, the first side cover 110 is pivotable relative to the chamber body 100 to open and close the first opening, and the second side cover 120 is pivotable relative to the chamber body 100 to open and close the second opening . Therefore, during maintenance, the first side cover 110 and the second side cover 120 need not be detached, but only need to be pivoted relative to the chamber body 100 (for example, around the first side cover 110 and the second side cover). One end of 120 is rotated downward to the outside, or upward to the outside, so that the operation is more convenient.

It should be understood that the first spacer 410 and the second spacer 420 may be, for example, an insulating material such as ceramics or resin.

In some embodiments of the present invention, a fixing member 500 for fixing the wafer 409 is respectively disposed on the wafer carrying surface 310 of the first carrier of the carrier unit 300 and the wafer carrying surface 320 of the second carrier, as shown in FIG. Shown. Further, one end of the support member 500 adjacent to the wafer carrying surface 320 of the second carrier is provided with a slope 501 for maintaining good contact with the wafer 409. Thereby, the wafer 409 can be better brought into contact with the carrier unit 300, thereby improving the stability of the wafer 409 during transport and improving the quality of the film forming process of the wafer 409.

In some embodiments of the invention, the chamber device further includes a transmission device 600 disposed within the chamber C. The transmission 600 is located below the carrier unit 300 for moving the carrier unit 300 into and out of the chamber.

In some examples of the invention, as shown in FIG. 1, the transmission 600 includes a drive shaft 610, The magnetic fluid bearing 620 drives the wheel 630 and a drive (not shown).

Specifically, the drive shaft 610 is disposed in the chamber C, and both ends of the drive shaft 610 extend outside the chamber C, respectively.

Magnetic fluid bearings 620 are respectively disposed at both ends of the drive shaft 610 for rotatably supporting the drive shaft 610 and sealing the drive shaft 610 and the chamber body 100.

The drive wheel 630 is mounted on the drive shaft 610 and supports the carrier unit 300. It is to be understood that a plurality of transmission wheels 630 may be provided for improving the stability of the carrier unit 300, such as the case of having two transmission wheels 630 in Fig. 1.

The drive unit is coupled to the drive shaft 610 to drive the drive shaft 610 and the drive wheel 620 to rotate together to move the carrier unit 300 into and out of the chamber C.

Thereby, the carrier unit 300 can be easily moved into and out of the chamber while achieving the sealing in the chamber C.

A plasma processing apparatus according to an embodiment of the present invention will be described below with reference to FIG.

The plasma processing apparatus according to an embodiment of the present invention may be, for example, a PECVD apparatus. A plasma processing apparatus according to an embodiment of the present invention includes a chamber device, a radio frequency power source 900, and a first heating element 710 and a second heating element 720. Wherein the chamber device is the chamber device described with reference to any of the above embodiments. A radio frequency power source 900 is coupled to the first radio frequency plate 210 and the second radio frequency electrode plate 220 in the chamber device to provide the power required for wafer processing. The first heating element 710 is disposed outside the first RF electrode plate 210 and the second heating element 720 is disposed outside the second RF electrode plate 220.

In some embodiments of the present invention, a first heat insulation panel 810 for preventing external heat generated by the first heating element 710 from radiating outward is disposed outside the first heating element 710, and a second prevention element is disposed outside the second heating element 720. The heat generated by the heating element 720 radiates outwardly from the second heat shield 820. For example, as shown in FIG. 1, in one example of the present invention, the first heating element 710 is disposed in the first side cover 110 adjacent to the first RF electrode plate 210 and located outside thereof (ie, away from the chamber C). On one side of the first heating element 710, a first heat shield 810 is provided. Regarding the second heating element 720 The same structure can be used for the second heat insulating panel 820. Thereby, the heating efficiency can be further improved and the energy consumption can be reduced.

In some embodiments of the invention, the plasma processing apparatus further includes a grounding component 350. In particular, the grounding member 350 is mounted (eg, by a bellows 340) on the outer surfaces of the top and bottom walls of the chamber body 100 and extends into the chamber for respectively placing the top and bottom of the carrier unit 300 The wall is grounded. Thus, both the vacuum seal between the grounding member 350 and the chamber body 100 is achieved by the bellows 340, while linear movement of the grounding member 350 is achieved in response to the movement of the carrier unit 300 into and out of the carrier unit 300.

Optionally, an air inlet and an air outlet are respectively disposed on the top wall and the bottom wall of the chamber body 100, and an air outlet may be disposed on the top wall of the chamber body 100 to be provided on the bottom wall thereof. Air port. Thus, the top-down airflow or the bottom-up airflow is more advantageous for carrying away particles generated during wafer processing and particles that are peeled off on the radio frequency substrate due to long-term use.

The flow of processing a wafer using the plasma processing apparatus of the embodiment of the present invention is described below.

First, the carrier unit 300 (i.e., the ground electrode) and the wafer 409 are introduced into the chamber C by a transmission. Thereafter, the grounding member 350 is connected to the top and bottom walls of the carrier unit 300 by linear motion to ensure good grounding of the carrier unit 300. After the chamber C is evacuated, the process gas enters the chamber C from the inlet port at a certain flow rate and finally exits the chamber C from the exhaust port. Thereafter, the environment in the entire chamber is maintained at a desired temperature by the first heating element 710 and the second heating element 720, and the RF energy is separately loaded to the first RF electrode plate 210 and the second RF electrode plate by the RF power source 900. 220, thereby carrying the wafer carrier between the first RF electrode plate 210 and the wafer carrier surface 310 of the first carrier of the carrier unit 300 and the second carrier of the second RF electrode plate 220 and the carrier unit 300 The gas between the faces 320 is excited into a plasma state to coat the wafer.

The plasma processing apparatus according to the embodiment of the present invention has the advantages of high wafer processing quality, high productivity, and ease of maintenance, since the chamber apparatus described with reference to the above-described embodiment of the present invention is used.

In the description of the present specification, reference is made to the terms "one embodiment", "some embodiments", "example", The description of the "specific examples", or "some examples" and the like are intended to be included in the particular features, structures, materials or features described in connection with the embodiments or examples. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

While the embodiments of the present invention have been shown and described, the embodiments of the invention may The scope of the invention is defined by the claims and their equivalents.

Claims

Request

A chamber device, comprising:

a chamber body, the chamber body defining a chamber;

n RF electrode plates, each of which is disposed obliquely to the horizontal direction in the chamber and insulated from the chamber body, n being an integer greater than or equal to 1;

a carrier unit, the carrier unit is grounded and includes n carrier plates, n is an integer greater than or equal to 1, the carrier is disposed in the chamber and the number thereof is the same as the number of the RF electrode plates, The carrier plate is correspondingly and substantially parallel to the RF electrode plate, and each of the carrier plates has a wafer carrying surface opposite to the corresponding RF electrode plate and used to carry the wafer.

The chamber device according to claim 1, wherein the n carrier plates surround the circumferential direction of the chamber to form the carrier unit, and the carrier unit has a hollow frame structure.

3. The chamber device according to claim 2, wherein the carrier unit and the chamber body have a trapezoidal annular structure in a direction parallel to a central axis of the chamber or Rectangular ring structure.

4. The chamber apparatus according to claim 1, wherein a fixing member for fixing the wafer is provided on a wafer carrying surface of each of the carrier plates.

The chamber device according to claim 4, wherein one end of the fixing member adjacent to the carrier is provided with a slope.

The chamber apparatus according to any one of claims 1 to 5, further comprising a transmission disposed in the chamber, the transmission being located below the carrier unit for The carrier unit moves into and out of the chamber.

The chamber device according to claim 6, wherein the transmission device comprises: a transmission shaft, the transmission shaft is disposed in the chamber, and two ends of the transmission shaft respectively extend to the Outside the chamber;

a magnetic fluid bearing, the magnetic fluid bearing being respectively disposed at both ends of the transmission shaft for rotatably supporting the transmission shaft and sealing the transmission shaft and the chamber body;

a transmission wheel, the transmission wheel is mounted on the transmission shaft and supports the carrier unit; and a driving device, the driving device is coupled to the transmission shaft to drive the transmission shaft and the transmission wheel to rotate together The carrier unit is moved into and out of the chamber.

The chamber device according to claim 7, wherein each of the RF electrode plate and the carrier plate has a number of two.

The chamber device according to claim 8, wherein the first side wall of the chamber body is provided with a first opening, and the second side wall of the chamber body is provided with a second opening The first opening is covered by a first side cover, and the second opening is covered by a second side cover, wherein the first RF electrode plate is disposed in the first side cover and passes through the first isolation pad and the The first side cover is insulated, and the second RF electrode plate is disposed in the second side cover and insulated from the second side cover by the second isolation pad.

10. The chamber device according to claim 9, wherein the first side cover is pivotable relative to the chamber body to open and close the first opening, and the second side cover Pivot relative to the chamber body to open and close the second opening.

11. A plasma processing apparatus, comprising:

a chamber device, the chamber device being the chamber device according to any one of claims 1-10; a radio frequency power source connected to each of the radio frequency electrode plates of the chamber device; and

n heating elements, n is an integer greater than or equal to 1, the heating element is the same number as the radio frequency electrode plate, and the heating element corresponds to the radio frequency electrode plate and is disposed at a corresponding radio frequency electrode The outside of the board.

A plasma processing apparatus according to claim 11, wherein a heat insulating plate for preventing radiation generated by the heating element from radiating outward is provided on an outer side of each of said heating elements.

13. The plasma processing apparatus according to claim 11, further comprising a grounding member mounted on an outer surface of the top and bottom walls of the chamber body and extending to the The chamber is used to ground the top and bottom walls of the carrier unit, respectively.

14. The plasma processing apparatus according to claim 13, wherein the plasma processing apparatus is a PECVD apparatus.