WO2013010313A1 - Structure d'augmentation du rendement de conversion photoélectrique d'une photopile - Google Patents

Structure d'augmentation du rendement de conversion photoélectrique d'une photopile Download PDF

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Publication number
WO2013010313A1
WO2013010313A1 PCT/CN2011/077234 CN2011077234W WO2013010313A1 WO 2013010313 A1 WO2013010313 A1 WO 2013010313A1 CN 2011077234 W CN2011077234 W CN 2011077234W WO 2013010313 A1 WO2013010313 A1 WO 2013010313A1
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conversion efficiency
component
solar
solar cell
photoelectric conversion
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PCT/CN2011/077234
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English (en)
Chinese (zh)
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刘荣隆
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矽明科技股份有限公司
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Priority to PCT/CN2011/077234 priority Critical patent/WO2013010313A1/fr
Publication of WO2013010313A1 publication Critical patent/WO2013010313A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of solar photoelectric conversion technology, in particular to a structure for increasing the photoelectric conversion efficiency of a solar cell.
  • Solar power generation is one of the most environmentally friendly ways of power conversion in power generation. In the context of the depletion of fossil energy and the global warming effect, solar power has received the attention of governments, but there are two factors that restrict its rapid development.
  • the solar power price is too high, mainly because the initial installation cost of the power generation equipment is too high, and the core of the cost lies in the battery chip; the second is the low solar energy conversion efficiency, and the conversion efficiency of the mass-produced single crystal silicon battery is 18% to 20%.
  • Polycrystalline silicon batteries are 16% to 18%, and amorphous silicon thin-film batteries are 6% to 9%. When these chips are packaged into components, the module efficiency is about 90% of the chip efficiency.
  • the low photoelectric conversion efficiency not only wastes the raw materials of expensive chips. It also makes it possible to accept a large area of sunlight and a large area under the unit power generation.
  • the only way to increase the power generation of the component is to improve the incident light intensity.
  • the sunlight is concentrated before the solar energy is incident, and then incident on the component due to the concentrated light. For this reason, the temperature of the component will increase a lot.
  • the general concentrating component must have a good cooling device, the high temperature of the component surface will accelerate the aging of the packaging material and the service life of the chip.
  • the object of the present invention is to provide a structure for increasing the photoelectric conversion efficiency of a solar cell, which improves the photoelectric conversion efficiency of the solar energy to improve the utilization rate of the solar energy under the premise of ensuring the service life of the solar module.
  • the solution of the present invention is:
  • a structure for increasing the photoelectric conversion efficiency of a solar cell comprising: a solar module and a mirror surface under the solar module; the bottom surface of the solar module is a light-transmitting plate; and the mirror surface collects a solar energy unit under the solar module and reflects the solar energy component to generate electricity.
  • the solar module is a power generation unit that can directly convert solar energy into electrical energy, such as a thin film solar module, a crystalline silicon solar module, and the like.
  • the light transmissive plate on the bottom surface of the solar module is transparent plastic or ultra-white glass.
  • the solar cell module is a conventional solar cell chip or a multilayer PN junction cell chip.
  • the multi-layer PN junction battery chip for a thin film battery the PN junction is superimposed on one side of the substrate or distributed on both sides of the substrate; the PN junction of the crystalline silicon battery chip is superimposed on one side of the substrate, or the same on both sides of the substrate To the PN junction.
  • the mirror surface is a combination of one or more of a concave mirror, a convex mirror, and a plane mirror.
  • the solar modules or solar cell chips are arranged in a matrix or staggered.
  • the invention is specifically a method for continuously generating power by collecting sunlight below the plane of the solar module and returning the component by reflection, so that the photoelectric conversion efficiency of the solar cell module can be increased by 6 to 72%, although the mirror emitting structure is increased.
  • the overall cost, but in addition to the structure of the back plate with transparent materials instead of expensive fluoroplastics can save part of the cost, due to the substantial increase in power generation, the power generation cost per kWh is greatly reduced.
  • FIG. 1A and 1B are schematic views showing a single-sided silicon solar cell chip in a solar module of the present invention
  • FIGS. 2A and 2B are schematic views showing a single-sided thin film solar cell chip in a solar module of the present invention
  • 3A and 3B are schematic views of a double-sided crystalline silicon solar cell chip in a solar module of the present invention.
  • FIGS. 4A and 4B are schematic views showing a double-sided thin film solar cell chip in a solar module of the present invention.
  • 5A and 5B are schematic diagrams showing a structure of a battery chip package in a solar module of the present invention.
  • 6A, 6B, 6C, and 6D are schematic diagrams showing the arrangement of solar cell chips or components of the present invention.
  • 7A, 7B, and 7C are schematic views of the operation of the present invention.
  • the present invention discloses a structure for increasing the photoelectric conversion efficiency of a solar cell, which comprises a solar module X and a mirror surface Y therebelow, and a bottom surface of the solar module X is a light-transmitting plate X1.
  • the solar cell chip is set to X2; the mirror surface Y collects the power generation unit that reflects the sunlight below the solar module X and returns to the solar module X to generate electricity.
  • the battery chip of the present invention can be of the following four types:
  • Single-sided crystalline silicon solar cell chip One of the most commonly used crystalline silicon solar cell chips has one or more layers of PN junctions on one side of a crystalline silicon wafer. As shown in FIG. 1A, the electrode layer 10, the anti-reflection layer 11, the N-type layer 12, the P-type layer 13, the N-type layer 14, the P-type single crystal/polysilicon substrate layer 15, and the conductive electrode are sequentially arranged from top to bottom. Layer 16; as shown in FIG.
  • the conductive electrode layer 26 may be plated with an amorphous silicon layer (I layer) on both surfaces of the N-type single crystal silicon/polycrystalline silicon substrate, and then formed into a battery chip (such as SANYO's HIT battery).
  • the monocrystalline silicon battery chip can use a wafer to make full use of high-purity silicon materials.
  • the most commonly used thin film solar cell chip has one or more layers of PN junction on one side of the substrate, as shown in FIG. 2A, which is an electrode layer 30 from top to bottom.
  • the electrode layer 40 From top to bottom, the electrode layer 40, the anti-reflection layer 41, the P-type layer 42, and the N-type layer 43 (the PN layer can be stacked in layers of 0 to 7 layers), the P-type layer 44, the N-type layer 45, and transparent Electrode layer 46 and transparent substrate 47.
  • Double-sided crystalline silicon solar cell chip one or more layers of PN junctions are formed on both sides of the crystal silicon wafer, and the orientations of the PN junctions are the same, as shown in FIG. 3A, which is an electrode layer 50 and anti-reflection from top to bottom.
  • the N-type layer 58 and the P-type layer 59 (the NP layer may be stacked in a layer of 0 to 7 layers) and the conductive electrode layer 50, as shown in FIG.
  • the surface of the N-type single crystal silicon/polysilicon substrate may also be plated with an amorphous silicon layer (I layer). ), and then made a battery chip (such as SANYO's HIT battery).
  • the monocrystalline silicon battery chip can use a wafer to make full use of high-purity silicon materials.
  • Double-sided thin film solar cell chip one or more layers of PN junctions on both sides of the substrate, the PN junctions are oriented in opposite directions, as shown in FIG. 4A, which is an electrode layer 70 from top to bottom, and anti-reflection Layer 71, N-type layer 72, P-type layer 73 (NP layer may be stacked in layers of 0 to 7 layers), N-type layer 74, P-type layer 75, transparent electrode layer 76, transparent substrate 711, P-type layer 77, N
  • the pattern layer 78, the p-type layer 79, and the N-type layer 710 (the NP layer may be stacked in a layer of 0 to 7 layers), the anti-reflection layer 71, and the electrode layer 70.
  • FIG. 4A is an electrode layer 70 from top to bottom
  • N-type layer 74 N-type layer 75
  • the electrode layer 80, the anti-reflection layer 81, the P-type layer 82, and the N-type layer 83 are sequentially arranged from top to bottom (the PN layer may be stacked in layers of 0 to 7 layers), and the P-type layer 84, N.
  • the pattern layer 85, the transparent electrode layer 86, the transparent substrate 811, the N-type layer 87, the P-type layer 88, the N-type layer 89, and the P-type layer 810 (the PN layer may be stacked in layers of 0 to 7 layers), the anti-reflection layer 81 and Electrode layer 80.
  • the invention patent uses a single-sided crystalline silicon solar cell chip, and its photoelectric conversion efficiency can be increased by 6% to 12% compared with the case of ordinary non-concentration.
  • the invention patent uses a single-sided thin film solar cell chip, and the photoelectric conversion efficiency thereof can be increased by 10% to 22% compared with the case of ordinary non-concentration.
  • the invention patent uses a double-sided crystalline silicon solar cell chip, and the photoelectric conversion efficiency thereof can be increased by 30% to 58% compared with the case of ordinary non-concentration.
  • the patented double-sided thin film solar cell chip can increase the photoelectric conversion efficiency by 30% to 72% compared with the case of ordinary non-concentration.
  • the back plate material is made of a transparent material such as ultra-white glass, transparent plastic, etc., and the structure is as shown in Figs. 5A and 5B.
  • the A-type package structure includes ultra-white glass A1, EVAA2, A4, battery chip A3, transparent bottom plate A5, silica gel A6 and aluminum frame A7, which are mainly used for packaging of crystalline silicon battery chip and double-sided thin film battery chip;
  • the structure includes a transparent substrate B1, a battery chip B2, an EVAB3, a transparent bottom plate B4, a silica gel B5 and an aluminum frame B6, and is mainly used for packaging of a single-sided thin film battery.
  • the package structure does not use expensive fluoroplastic backsheets and instead uses relatively inexpensive transparent materials.
  • the array of battery chips or components of the present invention may be one of the arrangements shown in Figure 6, such as a matrix arrangement or a staggered arrangement.
  • the under-plate reflection-fit battery chip or assembly array of the present invention may be one of the mirror arrangements as shown in FIG.
  • the sunlight below the solar module refers to the sun's rays below the plane of the solar module. It can be the sunlight left after the sun's rays penetrate the solar cells, the sunlight that penetrates the gap of the solar cells, and the sunlight that penetrates the gap of the solar modules.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7A
  • the package structure uses 60 single-sided single crystal silicon 156 chips.
  • the bottom plate is made of transparent PET.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7B
  • the package structure uses 60 single-sided single crystal silicon 156 chips.
  • the bottom plate is made of transparent PET.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use Figure 7C reflector
  • the package structure uses a single-sided CIGS thin film battery.
  • the bottom plate is a transparent PET material.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7A
  • the package structure uses a single-sided CIGS thin film battery.
  • the bottom plate is a transparent PET material.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7B
  • the package structure uses a single-sided CIGS thin film battery.
  • the bottom plate is a transparent PET material.
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use Figure 7C reflector
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7A
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7B
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use Figure 7C reflector
  • the package structure is double-sided CIGS thin film battery
  • the bottom plate is transparent PET material
  • Pm 77.8W
  • Vm 55.2V
  • Im 1.41A
  • Voc 73.9
  • Isc 1.69A
  • component effective area 6440cm2 single-sided
  • component effective conversion efficiency ⁇ m 12.08% (calculated by the effective area of the component).
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7A
  • the package structure is double-sided CIGS thin film battery
  • the bottom plate is transparent PET material
  • Pm 77.8W
  • Vm 55.2V
  • Im 1.41A
  • Voc 73.9
  • Isc 1.69A
  • component effective area 6440cm2 single-sided
  • component effective conversion efficiency ⁇ m 12.08% (calculated by the effective area of the component).
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7B
  • the package structure is double-sided CIGS thin film battery
  • the bottom plate is transparent PET material
  • Pm 77.8W
  • Vm 55.2V
  • Im 1.41A
  • Voc 73.9
  • Isc 1.69A
  • component effective area 6440cm2 single-sided
  • component effective conversion efficiency ⁇ m 12.08% (calculated by the effective area of the component).
  • Component installation facing south, tilt angle 23 degrees
  • Component reflector use the reflector of Figure 7B

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

La présente invention concerne une structure d'augmentation du rendement de conversion photoélectrique d'une photopile, comprenant un ensemble d'énergie solaire (X) et une surface spéculaire (Y) sous ledit ensemble, la face inférieure de l'ensemble d'énergie solaire (X) étant posée sous la forme d'un panneau perméable à la lumière (X1) ; la surface spéculaire (Y) capte les rayons du soleil sous l'ensemble d'énergie solaire (X) pour les réfléchir à nouveau dans l'unité de production d'énergie de l'ensemble d'énergie solaire (X) pour produire du courant. Le fait de collecter les rayons du soleil sous le plan de l'ensemble d'énergie solaire (X) et de les faire se réfléchir à nouveau dans l'ensemble d'énergie solaire (X) pour continuer de produire de l'énergie permet d'augmenter le rendement de conversion photoélectrique. Le fait d'utiliser un matériau transparent au lieu de plastiques fluorés dans le plan arrière de la structure permet de réduire les coûts de fabrication.
PCT/CN2011/077234 2011-07-18 2011-07-18 Structure d'augmentation du rendement de conversion photoélectrique d'une photopile WO2013010313A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9464783B2 (en) 2013-03-15 2016-10-11 John Paul Morgan Concentrated photovoltaic panel
US9595627B2 (en) 2013-03-15 2017-03-14 John Paul Morgan Photovoltaic panel
US9714756B2 (en) 2013-03-15 2017-07-25 Morgan Solar Inc. Illumination device
US9960303B2 (en) 2013-03-15 2018-05-01 Morgan Solar Inc. Sunlight concentrating and harvesting device
WO2022258868A1 (fr) * 2021-06-07 2022-12-15 Universidad De Jaén Module photovoltaïque bifacial semi-transparent ayant des concentrateurs d'irradiance postérieure

Citations (5)

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