WO2013004081A1 - Procédé pour fabriquer une structure de capteur intégrée composite - Google Patents

Procédé pour fabriquer une structure de capteur intégrée composite Download PDF

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Publication number
WO2013004081A1
WO2013004081A1 PCT/CN2012/070730 CN2012070730W WO2013004081A1 WO 2013004081 A1 WO2013004081 A1 WO 2013004081A1 CN 2012070730 W CN2012070730 W CN 2012070730W WO 2013004081 A1 WO2013004081 A1 WO 2013004081A1
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Prior art keywords
substrate
manufacturing
groove
sensor
cavity
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PCT/CN2012/070730
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English (en)
Chinese (zh)
Inventor
张挺
谢志峰
邵凯
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上海先进半导体制造股份有限公司
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Publication of WO2013004081A1 publication Critical patent/WO2013004081A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer

Definitions

  • the present invention relates to the field of microelectromechanical systems (MEMS) manufacturing technology, and in particular, to a composite integrated sensor structure incorporating a temperature sensor, an acceleration sensor, and a pressure sensor, and a method of fabricating the same.
  • MEMS microelectromechanical systems
  • the sensor chip no longer contains a single sensor device, but more in the form of a system on a chip (SOC or SIP).
  • SOC system on a chip
  • multiple sensor device units are often integrated, and even peripheral CMOS integrated circuits are included to form a systematic on-chip composite integrated sensor structure.
  • CMOS complementary metal-oxide-semiconductor
  • the structure and manufacturing method of the composite integrated sensor is not only the key to affecting the performance of the sensor, but also determines the cost of the sensor chip and ultimately determines the main factors of the sensor's competitiveness.
  • Most of the current sensor processes require a backside process. After the backside process is completed, the cavity is sealed by bonding. These processes are currently the mainstream, but they are not compatible with conventional semiconductor processes, so it is necessary to use a customized sensor processing line to increase production costs. Summary of the invention
  • the technical problem to be solved by the present invention is to provide a composite integrated sensor structure and a manufacturing method thereof, which are compatible with conventional semiconductor processes, simplify the manufacturing process, and reduce the production cost.
  • the present invention provides a manufacturing method of a composite integrated sensor structure, the composite integrated sensor structure including an acceleration sensor, a temperature resistance sensor and a pressure sensor, the manufacturing method comprising the steps of:
  • the deep trench is etched by wet etching, and the cavity of the pressure sensor and the acceleration sensor are respectively formed inside the substrate;
  • An isolation trench is formed around the mass, the isolation trench penetrating a substrate above the cavity of the acceleration sensor, the mass being connected to the substrate in a cantilever fashion.
  • the method further includes depositing an insulating layer prior to forming the trench in which the cavity is formed.
  • the positional arrangement of the acceleration sensor, the temperature resistance sensor, and the pressure sensor in the composite integrated sensor structure is arbitrary.
  • the substrate is silicon in the (111) crystal orientation.
  • a method of forming a doped region on the substrate is an ion implantation method.
  • the shape and/or depth of the groove is adjustable according to actual needs.
  • the surface of the substrate and the barrier layer at the bottom of the trench are removed by a etch back process.
  • the deep groove has a depth of 0.1 to 80 ⁇ m.
  • the wet etching method forms a cavity inside the substrate using an anisotropic etching process.
  • the wet etching solution is ruthenium and/or ruthenium.
  • the shape and/or depth of the cavity is arbitrary. Fill the isolation and / or fill material.
  • the isolation and/or filling material is a single layer or a multilayer structure.
  • the isolation and/or filling material is polysilicon.
  • the planarization process comprises chemical mechanical polishing and/or etchback.
  • the conductive lead and/or the material of the electrode comprises aluminum, copper, tungsten, titanium, titanium tungsten, titanium nitride, gold, silver, nickel, palladium and any alloy thereof.
  • the method of depositing the mass is a physical vapor deposition method or a chemical plating method.
  • the mass is a single layer or a multilayer structure.
  • the material of the mass comprises copper and tungsten.
  • the shape of the isolation trench surrounding the mass is a polygon and any irregular pattern.
  • the present invention also provides a composite integrated sensor structure fabricated in accordance with any of the above methods.
  • the present invention has the following advantages:
  • the composite integrated sensor structure provided by the invention adopts a front-end process compatible with a conventional semiconductor process, and can realize large-scale manufacturing on a general semiconductor production line, and has the advantages of practicality, economy, high performance and the like.
  • FIG. 1 is a schematic plan view showing a structure of a composite integrated sensor structure according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional structural view of the composite integrated sensor structure shown in FIG. 1 along a direction of ⁇ - ⁇ , ⁇ - ⁇ , and CC in the figure;
  • FIG. 3 is a schematic flow chart of a manufacturing method of a composite integrated sensor structure according to an embodiment of the present invention
  • FIG. 4 to FIG. 20 are schematic cross-sectional structural views showing a manufacturing process of an integrated sensor structure according to an embodiment of the present invention
  • 21 to 33 are schematic cross-sectional views showing a manufacturing process of an integrated sensor structure according to another embodiment of the present invention. detailed description
  • FIG. 1 is a schematic diagram showing the planar structure of a composite integrated sensor structure according to an embodiment of the present invention.
  • the composite integrated sensor structure has an acceleration sensor (located in the upper half of the figure), a temperature-resistance sensor (located in the middle of the figure) and a pressure sensor (located in the lower part of the figure). ).
  • an acceleration mass 009 of an acceleration sensor, a piezoresistive unit 007, a piezoresistive array 004 of a pressure sensor, and a temperature resistance unit 006 of a temperature resistance sensor are formed on the substrate 001.
  • Each unit is connected by a conductive lead 003 or a metal electrode 005, and the entire structure has a plurality of conductive electrodes 002.
  • the cross-sectional structure of the composite integrated sensor structure in the A-A, B-B and C-C directions is shown in Fig. 2, as shown in Fig. 2.
  • FIG. 2 is a schematic cross-sectional view of the composite integrated sensor structure shown in FIG. 1 along the A-A, B-B, and C-C directions in the drawing.
  • the left-to-right distribution of the cross-sectional structure of the composite integrated sensor structure in the A-A, B-B, and C-C directions is the pressure sensor, the temperature resistance sensor, and the acceleration sensor unit, respectively.
  • the piezoresistive array 004 is formed on a base film having a thickness, and the film is suspended above the void 010.
  • the marks 010 and 011 in the figure are isolated and/or filled materials; the electrodes 005 are formed at both ends of the doped region 008.
  • the mass of the acceleration sensor is 009, and there is a gap 011 underneath to form a cantilever beam structure.
  • the cantilever beam has a doped region 007 near the substrate side, and has a piezoresistive effect, and the reference numeral 003 is a conductive lead.
  • FIG. 3 is a schematic flow chart of a method of fabricating a composite integrated sensor structure according to an embodiment of the present invention.
  • the composite integrated sensor structure can include an acceleration sensor, a temperature resistance sensor, and a pressure sensor. As shown, the method flow can include:
  • Step S101 is performed to provide a substrate, and a doping region is formed on the substrate, respectively, as a piezoresistive array of the pressure sensor, a piezoresistive unit of the acceleration sensor, and a temperature resistance unit of the temperature resistance sensor;
  • Step S102 etching the substrate by means of a hard mask, forming a trench for making a cavity in the substrate;
  • Step S103 depositing a barrier layer on the surface of the substrate and the sidewalls and the bottom of the trench; performing step S104, removing the barrier layer on the surface of the barrier layer and the bottom of the trench, and forming a sidewall protective layer on the sidewall of the trench;
  • Step S105 using the sidewall protective layer and the hard mask as a mask, continuing to etch the trench to form a deep trench; performing step S106, etching the deep trench by wet etching, and forming a pressure sensor and an acceleration sensor respectively inside the substrate Cavity
  • Step S107 is performed, filling the isolation and/or filling material between the sidewall protective layers of the trench to form a plug structure to isolate the cavity from the outside;
  • Step S108 is performed to planarize the surface of the substrate until the substrate itself is exposed
  • Step S109 forming conductive leads and electrodes on the surface of the substrate
  • Step S110 depositing a mass in the region of the acceleration sensor, and patterning the same; performing step S111, forming an isolation groove around the mass, the isolation groove penetrating the substrate above the cavity of the acceleration sensor, and the mass is The cantilever form is connected to the substrate.
  • FIGS. 4 to 20 are schematic cross-sectional views showing a manufacturing process of a composite integrated sensor structure according to an embodiment of the present invention.
  • the composite integrated sensor structure can include an acceleration sensor, a temperature resistance sensor, and a pressure sensor. It is to be noted that these and other drawings are merely exemplary, and are not intended to be construed as a limitation of the scope of the invention.
  • a substrate 101 is provided, which may be (111) crystal orientation silicon, or may be other substrates such as germanium, germanium silicon, and the like.
  • Doped regions 102, 103 are then formed on substrate 101 by ion implantation or ion implantation plus diffusion.
  • the doped regions 102, 103 may have a certain shape and may be obtained according to a general semiconductor process as a piezoresistive array of a pressure sensor, a piezoresistive unit of an acceleration sensor, and a temperature resistance unit of a temperature resistance sensor.
  • a hard mask may be overlaid over the region of the substrate 101 where no doping is required, for example, the hard mask may be an oxide or a nitride. Or photoresist or the like.
  • the substrate 101 is made of (111) crystal silicon (Si), but the substrate material that can be used in the present invention is obviously not limited thereto, and those skilled in the art can perform corresponding according to actual needs. Adjustment. A schematic structural view of the cross-section after formation is shown in FIGS. 5 and 6.
  • the substrate 101 is etched, and grooves 104, 105 for forming cavities are formed in the substrate 101, wherein the shapes and/or depths of the grooves 104, 105 are adjustable according to actual needs.
  • the projection of the grooves 104, 105 may be a polygon (including a rectangle) or a circle, and may obviously be other shapes, and will not be described again. It should be noted that in order to form the above-mentioned trench, it is necessary to use a photoresist or a hard mask for blocking during the etching process, but it is not shown in the diagram of the embodiment, but does not represent the invention. The above photoresist and hard mask are included.
  • the barrier layer 106 is deposited on the surface of the substrate 101 and the sidewalls and the bottom of the trenches 104, 105 by, for example, chemical vapor deposition, and may be replaced by other methods such as atomic layer deposition.
  • the deposited barrier layer 106 must cover the sidewalls of the trenches 104, 105. Accordingly, those skilled in the art will recognize that the deposition method employed specifically depends on whether the method covers the sidewalls of the grooves 104, 105 well.
  • the surface of the substrate 101 and the barrier layer 106 at the bottom of the trenches 104, 105 are removed by a etch back process, particularly to expose the substrate material at the bottom of the trenches 104, 105, i.e., the bottom barrier layer 106 is completely removed.
  • the portions of the protective layer 106 that are not attached to the sidewalls in the grooves 104, 105 are the sidewall protective layers 107 of the grooves 104, 105.
  • the sidewall protective layer 107 and the photoresist (or hard mask) (not shown) are used as masks, and the trenches 104 and 105 are further etched to form deep trenches 108.
  • the deep groove 108 may have a depth of 0.1 to 80 ⁇ m. In this process, other regions can be protected due to the presence of the sidewall protective layer 107 and the hard mask, and therefore, the selected etching conditions require a better etching selectivity.
  • the deep trenches 108 are etched by wet etching, and the chambers 109, 110 of the pressure sensor and the acceleration sensor are respectively formed inside the substrate 101.
  • the preferred cavities 109, 110 are formed, so that those skilled in the art can preferably adopt an anisotropic etching process according to actual needs.
  • anisotropic etching process it can also be other ways of corrosion.
  • a (111) lattice-oriented silicon substrate is selected, anisotropic (selective) etching of the substrate 101 is performed inside the crucible and/or a wet etching solution, and cavities 109, 110 are formed therein. .
  • Both 110 and 110 are hollow structures.
  • the cavities 109 and 110 shown here are in the cross section.
  • the rectangular shape however, it should be noted here that the view is merely for convenience of presentation.
  • the shape and/or depth of the actually obtained cavity is arbitrary, closely related to the etching process, the substrate and other aspects, and is not a regular rectangle. For example, a certain angle may be formed between the side walls and the bottom surface of the cavities 109 and 110, for example, 54.7 degrees (not shown).
  • Those skilled in the art will appreciate that the shape and/or depth of the cavities 109 and 110 are not limiting of the present invention.
  • a sealed structure In order to form a sensor assembly such as a pressure sensor, a sealed structure must be formed. As shown in FIG. 12, it is preferable to fill the isolation and/or filling material 111, such as polysilicon, between the sidewall protective layers 107 of the trenches 104, 105 by a chemical vapor deposition method or an atomic layer deposition method to form an intercalation.
  • the plug structure isolates the chambers 109, 110 from the outside.
  • the filled material 111 may be not only other types of materials but also multilayer materials, and is not limited to a single layer material.
  • the surface of the substrate 101 is planarized by a planarization process such as chemical mechanical polishing and/or etchback until the substrate 101 itself is exposed, as shown in FIG.
  • the polysilicon latch structures 112, 113 shown in the figures are capable of sealing the chambers 109 and 110 with a good fit.
  • a conductive lead 114 and an electrode 115 are formed on the surface of the substrate 101.
  • the material of the conductive lead 114 and/or the electrode 115 may include aluminum, copper, tungsten, titanium, titanium tungsten, titanium nitride, gold, silver. Nickel, palladium and optionally any alloy thereof, preferably aluminum and tungsten.
  • the top view formed at this time is as shown in Fig. 15, and the holes 116 and 117 formed in the drawing are as shown in the left diagram of Fig. 16, the center area is the filled plug structures 112 and 113, and the outer surface is surrounded by the barrier material 107.
  • Fig. 15 The top view formed at this time is as shown in Fig. 15, and the holes 116 and 117 formed in the drawing are as shown in the left diagram of Fig. 16, the center area is the filled plug structures 112 and 113, and the outer surface is surrounded by the barrier material 107.
  • the purpose of the patterns 116 and 117 is to hollow out the surrounding substrate 101 by wet etching to form the cavities 109, 110.
  • the grooves 104 and 105 formed may also be of other construction.
  • the shapes of the patterns 116 and 117 are as shown in the right figure of Fig. 16. .
  • the mass 118 is deposited in the region of the acceleration sensor and patterned.
  • the method used may be a physical vapor deposition method or a chemical plating method.
  • the deposited mass 118 may be a single layer structure or a multilayer structure.
  • the material of the mass 118 is preferably, but not limited to, copper (Cu), tungsten (W), and the like.
  • the method of patterning the mass 118 can be performed by etching.
  • a top view of the entire composite integrated sensor structure forming the mass 118 is shown in FIG.
  • an isolation groove 119 is formed around the mass 118, and the shape of the isolation groove 119 may be a polygon and an arbitrary irregular pattern.
  • the isolation trench 119 penetrates the substrate 101 above the cavity 110 of the acceleration sensor, and it can be seen that the mass 118 is connected to the substrate 101 in a cantilever fashion only by means of a cantilever beam.
  • a schematic diagram of the planar structure of the finally formed composite integrated sensor structure is shown in FIG.
  • the acceleration sensor realizes the distortion of the cantilever beam under the amplification of the mass block, realizes the signal conversion and amplification through the bridge, and outputs the acceleration signal; the temperature resistance sensor outputs according to the temperature change.
  • the pressure sensor forms a deformation of the silicon film according to the change of the pressure, and converts the change of the resistance caused by the deformation into a voltage output corresponding to the pressure through the bridge.
  • a composite integrated sensor is formed.
  • 21 to 33 are schematic cross-sectional structural views showing a manufacturing process of a combined sensor structure according to another embodiment of the present invention.
  • the composite integrated sensor structure can include an acceleration sensor, a temperature resistance sensor, and a pressure sensor. It is to be noted that these and other subsequent figures are only by way of example, and are not intended to be construed as a limitation of the scope of the invention.
  • a substrate 201 is provided, which may be silicon in the (111) crystal orientation, or may be another substrate such as a substrate such as germanium or germanium silicon.
  • a doped region 202 is then formed on the substrate 201 by ion implantation or ion implantation plus diffusion.
  • the doped region 202 may have a certain shape and may be obtained according to a general semiconductor process.
  • the ion implantation conditions of several discrete regions may be the same or different, respectively, as a piezoresistive array of a pressure sensor, a piezoresistive unit of an acceleration sensor, and Temperature resistance unit of the temperature resistance sensor.
  • a mask may be overlying the regions of the substrate 201 that are not required to be doped, for example the mask may be an oxide, a nitride or a light. Engraved plastic and so on.
  • the substrate 201 is exemplified by silicon (Si) in the (111) crystal orientation, but the substrate material which can be used in the present invention is obviously not limited thereto, and those skilled in the art can make corresponding adjustments according to actual needs.
  • the greatest difference from the previous embodiment is that before the formation of the groove 204 for forming the cavity, the insulating layer 203 is deposited on the substrate 201, and the cross-sectional structure of the formed structure is as shown in Fig. 22.
  • the substrate 201 is etched, and a groove 204 for forming a cavity is formed in the substrate 201, wherein the shape and/or depth of the groove 204 is adjustable according to actual needs.
  • the projection of the slot 204 may be a polygon (including a rectangle) or a circle, and obviously may be other shapes, and details are not described herein again.
  • the barrier layer 205 is deposited on the surface of the insulating layer 203 and the sidewalls and the bottom of the trench 204 by, for example, chemical vapor deposition, and may be replaced by other methods such as atomic layer deposition.
  • the barrier layer 205 is necessary to cover the sidewalls of the trench 204. Accordingly, those skilled in the art will recognize that the deposition method employed in particular depends on whether the method covers the sidewalls of the trench 204 well.
  • the surface of the insulating layer 203 and the barrier layer 205 at the bottom of the trench 204 are removed by a etch back process, particularly to expose the underlying material of the bottom of the trench 204, i.e., the bottom barrier layer 205 is completely removed.
  • the portion of the barrier layer 205 that is attached to the sidewalls in the trench 204 that is not removed becomes the sidewall protective layer of the trench 204.
  • the etching process is performed, and the sidewall protective layer 206 and the insulating layer 203 are used as a mask, and the trench 204 is further etched to form a deep trench 207.
  • the deep trench 207 may have a depth of 0.1 to 80 ⁇ m.
  • the selected etching conditions require a better etching selectivity.
  • the deep trenches 207 are etched by wet etching, and the chambers 208 of the pressure sensor and the acceleration sensor are respectively formed inside the substrate 201.
  • a more ideal cavity 208 is formed. Therefore, those skilled in the art can preferably adopt an anisotropic etching process according to actual needs. Of course, it can also be other ways of corrosion. For example, a (111) lattice-oriented silicon substrate is selected, anisotropic (selective) etching of the substrate 201 is performed using a ruthenium and/or a wet etching solution during the etching of the internal cavity thereof, and a cavity is formed therein. Body 208.
  • the cavity 208 in the figure is a hollow structure. It should be noted that the cavity 208 shown here is a regular rectangle in cross section. However, it should be noted here that the view is merely for convenience of presentation, and the shape and/or depth of the actually obtained cavity 208 is arbitrary. Closely related to the etching process, substrate, and other aspects, it is not a regular rectangle. For example, a certain angle may be formed between the sidewall and the bottom surface of the cavity 208, for example, 54.7 degrees (not shown). Those skilled in the art will appreciate that the shape and/or depth of the cavity 208 is not limiting of the present invention.
  • a sealed structure In order to form a sensor assembly such as a pressure sensor, a sealed structure must be formed. As shown in Figure 28, The isolation and/or filling material 209 is preferably filled between the sidewall protective layers 206 of the trenches 204 by a chemical vapor deposition method or an atomic layer deposition method, such as single or multiple layers of polysilicon, silicon oxide, nitridation. Silicon or the like forms a plug structure to isolate the cavity 208 from the outside.
  • the surface of the substrate 201 is not planarized, and the surface of the substrate 201 is directly made conductive.
  • the I line and the electrode 210, the material of the conductive I wire and/or the electrode 210 may comprise aluminum, copper, tungsten, titanium, titanium tungsten, gold, silver, nickel, palladium and optionally an alloy thereof, preferably aluminum.
  • the mass 211 is deposited in the region of the acceleration sensor and patterned.
  • the method used may be a physical vapor deposition method or a chemical plating method.
  • the deposited mass 211 may be a single layer structure or a multilayer structure.
  • the material of the mass 211 is preferably, but not limited to, a material such as copper or tungsten.
  • the method of patterning the mass 211 can be performed by etching.
  • a top view of the entire composite integrated sensor structure forming the mass 211 is shown in FIG.
  • an isolation groove 212 is formed around the mass 211, and the shape of the isolation groove 212 may be a polygon and an arbitrary irregular pattern.
  • the isolation slot 212 penetrates the base 201 above the cavity 208 of the acceleration sensor, and it can be seen that the mass 211 is only cantilevered to the base 201 by means of a cantilever beam.
  • FIG. 1 A schematic diagram of the planar structure of the resulting composite integrated sensor structure is shown in FIG.
  • the acceleration sensor realizes the distortion of the cantilever beam under the amplification of the mass block, realizes the signal conversion and amplification through the bridge, and outputs the acceleration signal;
  • the temperature resistance sensor outputs according to the temperature change. Different resistances;
  • the pressure sensor forms a deformation of the silicon film according to the change of the pressure, and converts the change of the resistance caused by the deformation into a voltage output corresponding to the pressure through the bridge.
  • the composite integrated sensor structure provided by the invention adopts a front-end process compatible with a conventional semiconductor process, and can realize large-scale manufacturing on a general semiconductor production line, and has the advantages of practicality, economy, high performance and the like.

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention porte sur un procédé pour fabriquer une structure de capteur intégrée composite, lequel procédé comprend les étapes consistant à : disposer un substrat et former une région dopée sur celui-ci ; graver le substrat de façon à former une rainure pour réaliser une cavité ; déposer une couche de barrière sur la surface du substrat et la paroi latérale de la rainure et le fond de la rainure ; retirer la couche de barrière à partir de la surface du substrat et du fond de la rainure, et former des couches de protection de paroi latérale sur la paroi latérale de la rainure ; le masque dur sur le substrat et les couches de protection de paroi latérale interagissant entre eux pour poursuivre la gravure de la rainure de façon à former une rainure profonde ; corroder la rainure profonde de façon à former une cavité à l'intérieur du substrat ; effectuer un remplissage par un matériau d'isolation et/ou de remplissage de l'espace entre les couches de protection de paroi latérale de la rainure de façon à former une structure de bouchon de façon à isoler la cavité vis-à-vis de l'extérieur ; aplatir la surface du substrat ; réaliser un conducteur électriquement conducteur et une électrode sur la surface du substrat ; déposer un bloc de masse dans la région d'un transducteur d'accélération et réaliser une image de celui-ci ; et former une rainure d'isolation autour du bloc de masse, le bloc de masse étant relié au substrat selon un mode en porte-à-faux. La présente invention adopte un processus qui est positif et compatible avec le processus de semi-conducteurs classique, et présente les avantages d'être pratique, économique, de performances élevées, et analogues.
PCT/CN2012/070730 2011-07-04 2012-01-29 Procédé pour fabriquer une structure de capteur intégrée composite WO2013004081A1 (fr)

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CN201110185860.3 2011-07-04
CN201110185860.3A CN102285633B (zh) 2011-07-04 2011-07-04 复合集成传感器结构及其制造方法

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CN102328900A (zh) * 2011-08-12 2012-01-25 上海先进半导体制造股份有限公司 腔体的制造方法
CN102320558B (zh) * 2011-09-13 2014-03-26 上海先进半导体制造股份有限公司 全硅基微流体器件的腔体的制造方法
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CN104297520A (zh) * 2013-07-15 2015-01-21 苏州美仑凯力电子有限公司 一种单片嵌入结构集成硅加速度和压力复合传感器
CN105987722B (zh) * 2015-02-04 2019-05-28 中芯国际集成电路制造(上海)有限公司 一种压力传感器及其制备方法
CN105174201B (zh) * 2015-06-24 2017-10-10 上海芯赫科技有限公司 一种mems集成复合传感器及其加工方法
CN105905866B (zh) * 2016-05-12 2017-10-31 广东合微集成电路技术有限公司 一种复合传感器及制造方法
CN107215844B (zh) * 2017-06-13 2020-01-31 中国科学院上海微系统与信息技术研究所 一种膜片结构及其制作方法
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