WO2013003569A2 - Architectures de diodes électroluminescentes pour des performances renforcées - Google Patents

Architectures de diodes électroluminescentes pour des performances renforcées Download PDF

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Publication number
WO2013003569A2
WO2013003569A2 PCT/US2012/044606 US2012044606W WO2013003569A2 WO 2013003569 A2 WO2013003569 A2 WO 2013003569A2 US 2012044606 W US2012044606 W US 2012044606W WO 2013003569 A2 WO2013003569 A2 WO 2013003569A2
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Prior art keywords
light
emitting
led
optical system
shape
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PCT/US2012/044606
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English (en)
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WO2013003569A3 (fr
Inventor
Donald L. Mcdaniel, Jr.
Michael Lim
Michael Gregory Brown
Scott W. Duncan
Andrei Kazmierski
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Luminus Devices, Inc.
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Application filed by Luminus Devices, Inc. filed Critical Luminus Devices, Inc.
Priority to EP12804418.7A priority Critical patent/EP2727156B1/fr
Priority to CN201280042011.5A priority patent/CN103828071B/zh
Publication of WO2013003569A2 publication Critical patent/WO2013003569A2/fr
Publication of WO2013003569A3 publication Critical patent/WO2013003569A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/005—Diaphragms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/208—Homogenising, shaping of the illumination light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/361—Optical details, e.g. image relay to the camera or image sensor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • Patent Application Serial No. 61/502,130 filed June 28, 2011 under Attorney Docket No. L0655.70117US00, and entitled "Light-Emitting Diode Architectures for Enhanced Performance,” which is incorporated herein by reference in its entirety for all purposes.
  • a light-emitting diode often can provide light in a more efficient manner than an incandescent light source and/or a fluorescent light source.
  • the relatively high power efficiency associated with LEDs has created an interest in using LEDs to displace conventional light sources in a variety of lighting applications. For example, in some instances LEDs are being used as traffic lights and to illuminate cell phone keypads and displays.
  • an LED is formed of multiple layers, with at least some of the layers being formed of different materials.
  • the materials and thicknesses selected for the layers determine the wavelength(s) of light emitted by the LED.
  • the chemical composition of the layers can be selected to try to isolate injected electrical charge carriers into regions (commonly referred to as quantum wells) for relatively efficient conversion to optical power.
  • the layers on one side of the junction where a quantum well is grown are doped with donor atoms that result in high electron concentration (such layers are commonly referred to as n-type layers), and the layers on the opposite side are doped with acceptor atoms that result in a relatively high hole concentration (such layers are commonly referred to as p-type layers).
  • a common approach to preparing an LED is as follows.
  • the layers of material are prepared in the form of a wafer.
  • the layers are formed using an epitaxial deposition technique, such as metal-organic chemical vapor deposition (MOCVD), with the initially deposited layer being formed on a growth substrate.
  • MOCVD metal-organic chemical vapor deposition
  • the layers are then exposed to various etching and metallization techniques to form contacts for electrical current injection, and the wafer is subsequently sectioned into individual LED chips.
  • the LED chips are packaged.
  • electrical energy is usually injected into an LED and then converted into electromagnetic radiation (light), some of which is extracted from the LED, for example, via an emission surface.
  • a light-emitting device comprises, in certain embodiments, a light-emitting die comprising a light-generating region and a top surface, wherein the device is configured to selectively activate a portion of the light-generating region to produce a non-rectangular active emission area during use.
  • the light-emitting device comprises a light-emitting die comprising a light generating region and a top surface and at least one electrical contact positioned over the top surface of the light-emitting die to define an emission area having a perimeter with a non-rectangular shape.
  • the light-emitting device comprises, in certain embodiments, a plurality of mesas, each mesa having an emission surface; and an emission area defined by the emission surfaces of the mesas, wherein the emission area comprises a non-rectangular perimeter.
  • an optical system comprises, in certain embodiments, a light-emitting device comprising a light-emitting die comprising a light generating region and a top surface; a substantially non-rectangular emitter output aperture positioned over the top surface of the light-emitting device configured such that light emitted by the light-emitting device is transported through the emitter output aperture; and an input aperture arranged to receive light generated by the light generating region, wherein the shape of the emitter output aperture substantially corresponds to the shape of the input aperture.
  • the optical system comprises a plurality of light-emitting dies comprising light-generating regions and top surfaces, the light-emitting dies together defining a cumulative emission area; a substantially non-rectangular emitter output aperture positioned over the top surfaces of the light-emitting dies, configured such that light emitted by the light-emitting dies is transported through the emitter output aperture; and an input aperture arranged to receive light generated by the light generating regions.
  • the shape of the emitter output aperture substantially corresponds to the shape of the input aperture.
  • FIGS. 1A-1D are exemplary schematic illustrations of the geometries of emission surfaces and input apertures.
  • FIGS. 1E-1H are perspective view schematic illustrations of optical systems, according to one set of embodiments.
  • FIG. II is a schematic illustration showing the overlap of an emission surface shape and an input aperture shape, according to some embodiments.
  • FIG. 2 is an exemplary cross-sectional schematic illustration of an LED.
  • FIGS. 3A-3C are schematic illustrations of electrode layouts for LEDs, according to some embodiments.
  • FIGS. 4A-4B are, according to one set of embodiments, schematic illustrations of mesas.
  • FIGS. 5A-5C are schematic diagrams illustrating various configurations of light- emitting mesas, according to some embodiments.
  • FIGS. 5D-5E are schematic illustrations of arrangements including a plurality of LED dies, according to certain embodiments.
  • FIGS. 6A-6C are schematic diagrams outlining various electrode configurations, according to one set of embodiments.
  • FIGS. 7A-7B are exemplary schematic illustrations of a critical illumination system, according to certain embodiments.
  • FIGS. 7C-7D are schematic illustrations of a simulated critical illumination system, according to some embodiments.
  • FIGS. 7E-7P are, according to certain embodiments, exemplary simulated images illustrating the intensity and shape of light at various points in simulated critical illumination systems.
  • FIGS. 8A-8B are exemplary schematic illustrations of a Kohler illumination system, according to certain embodiments.
  • FIG. 8C is a schematic illustration of a simulated Kohler illumination system, according to some embodiments.
  • FIGS. 8D-8I are, according to certain embodiments, exemplary simulated images illustrating the intensity and shape of light at various points in simulated Kohler illumination systems. DETAILED DESCRIPTION
  • the present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods.
  • LEDs light-emitting diodes
  • an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described.
  • the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved.
  • chip designs and processes that may be employed in order to produce such devices are described.
  • Etendue is generally a property an optical system (e.g., a projector, a spot light, etc.) which characterizes how "spread out" light emitted from the system is in area and angle.
  • the etendue of a light source or of an optical system can be calculated as the product of the aperture area (A) and the solid angle subtended by the light emission ( ⁇ ).
  • An optical system (or an element within an optical system) cannot reduce the etendue of a light source. Rather, an optical system can, at best, preserve etendue (in which case, the etendue of the image that is produced matches the etendue of the light source).
  • optical illumination systems are essentially projectors with a circular input aperture.
  • the illumination system may include a source that projects light through a circular aperture prior to the light reaching the object that is to be illuminated.
  • Some of these optical illumination systems such as theater spot lights and architectural or entertainment gobo projectors, can be fundamentally constrained by the optical system etendue. That is to say, the optical system etendue can limit the extent to which narrow beams of light can be projected by the optical device. Even narrow beam projectors such as search lights, tactical flashlights, and signal beacons that do not pass their light through a physical "gate" can be limited by system etendue.
  • Such systems generally provide the most center point optical illuminance when the etendue of the light source is matched to the etendue of the optical system and when the source lumens per etendue (i.e., Lumens/ ⁇ ) is maximized.
  • rectangular light sources including power LEDs
  • a rectangular light source e.g., a power LED
  • FIGS. 1A-1D include schematic illustrations of two examples of comparisons of the emission surface geometry of a rectangular light source and the input aperture geometry of a circular aperture.
  • FIGS. 1A and 1C are perspective view schematic illustrations in which square LEDs 101 are configured to produce electromagnetic radiation 102, which is emitted into a circular input aperture 103 (e.g., an opening in an opaque material).
  • FIGS. IB and ID are side-view schematic illustrations of the systems, which show the overlap between the shape of the emission surface 106 of LED 101 and the shape of circular aperture 103.
  • square 104 represents the emitting area of square LED 101
  • circle 105 represents the shape of input aperture 103 of the optical system.
  • both LED dies 101 are the same size, and the optical systems are assumed to produce the same output beam angle.
  • FIGS. 1A-1B the shape of circular input optical aperture 103 (corresponding to circle 105) is inscribed within the shape of square emitting area 106 (corresponding to square 104).
  • This architecture results in a smaller optical output aperture and, hence, a smaller, less expensive optical system.
  • Optical modules could be packed closely together where an application requires multiple sources to achieve the required output.
  • 27% of the light emitted from square emission surface 106 of LED 101 is not transmitted by aperture 103 and is lost from the system.
  • the optical system of FIGS. 1A-1B preserves the etendue of the source (because the etendue cannot be decreased).
  • the shape of circular input optical aperture 103 (corresponding to circle 105) surrounds the shape of square emitting area 106 of LED 101, and therefore is able to transmit all of the light emitted from emission surface 106 (assuming the numeric aperture is appropriate).
  • a substantially larger optic (which costs more and cannot be packed as tightly in an array) would be needed.
  • the optical system illustrated in FIGS. 1C-1D produces an increase in etendue relative to that of the source.
  • the amount of light produced by the source that enters into an input aperture can be increased, for example, by employing a light source with a non- square or non-rectangular (e.g., a non-quadrilateral) emission surface.
  • the input aperture (also referred to as the aperture stop) is an aperture that generally physically limits the solid angle of light rays that pass through the system, and can limit the brightness of the image.
  • the input aperture is a transparent hole within an opaque material.
  • the input aperture is the reflective surface area defined by a microdisplay.
  • the input aperture can be the surface of a lens, waveguide, a profile gate, framing shutters, or other optical component that is arranged to receive light emitted by the LED.
  • the input aperture can be the object that is to be imaged (e.g., a microscope specimen), for example, when the LED is used in a critical illumination system and/or a Kohler illumination system, as described in more detail below.
  • the input aperture corresponds to the input of an optical element.
  • FIG. IE is a perspective view schematic illustration of a system in which an LED 101 comprising a non-rectangular emission surface 106 is employed.
  • LED 101 comprises a top surface 110.
  • Portion 111 of top surface 110 can be configured such that light is not emitted out of the LED through portion 111, using any of a variety of techniques, alone or in combination with each other, described in more detail below.
  • configuring LED 101 such that light is not emitted out of portion 111 creates a substantially circular emission surface 106.
  • FIG. IE is a perspective view schematic illustration of a system in which an LED 101 comprising a non-rectangular emission surface 106 is employed.
  • LED 101 comprises a top surface 110.
  • Portion 111 of top surface 110 can be configured such that light is not emitted out of the LED through portion 111, using any of a variety of techniques, alone or in combination with each other, described in more detail below.
  • configuring LED 101 such that light is not emitted out of portion 111 creates
  • the shape of emission surface 106 substantially corresponds to the shape of input aperture 103, which can ensure that a relatively large amount of the light emitted by LED 101 is transmitted through the input aperture while preserving the etendue of LED 101. While a circular emission surface 106 is illustrated in FIG. IE, in other embodiments, emission surfaces with other non-rectangular shapes can also be used, as described in more detail below.
  • the emission surface of an LED generally refers to the area of the LED from which light generated by the light-generating region of the LED is emitted out of the LED.
  • the emission surface of an LED could be the same shape as the LED die.
  • the emission surface can be the top surface of the LED die through which light generated by the light-generating region of the LED is emitted, as is illustrated in FIGS. 1A and 1C. In other cases, the emission surface can have a shape that is different than the shape of the LED die.
  • the shape of the emission surface of the LED can be non- rectangular and can be defined by one or more features positioned over the top surface of the die. Such embodiments can be useful, for example, in cases where the LED die is square or otherwise rectangular, and it is desired to create an emission surface of the LED that is non-rectangular (e.g., curved, 5-sided or greater polygonal (regular or irregular), etc.).
  • the emission surface of an LED is said to be defined by a feature when the feature alters the shape of the light emitted from the LED surface, relative to the shape of the light that would be emitted from the LED in the absence of the feature.
  • a feature when the feature alters the shape of the light emitted from the LED surface, relative to the shape of the light that would be emitted from the LED in the absence of the feature.
  • an opaque electrical contact that does not allow light to be transmitted through it or diffracted around it would be said to define an emission surface.
  • an opaque electrical contact in the form of a relatively thin wire which merely diffracts the light emitted from the LED such that the shape of the light emitted from the LED is not altered would not be said to define an emission surface.
  • region 111 can comprise an opaque material (e.g., one or more electrical contacts) positioned over surface 110 such that emission surface 106 remains uncovered.
  • the LED might include a top surface in which one or more regions of the top surface have been doped to reduce their electrical conductivities such that current is injected into (and light is emitted out of) the LED only through non-doped regions.
  • the emission surface would not include the doped areas of the top surface of the LED.
  • the emission area can correspond to the area occupied by the non-doped regions, assuming emission through the non-doped regions is not otherwise prevented (e.g., by covering the non-doped regions with an opaque material).
  • region 111 of top surface 110 can be doped such that the material within region 111 is incapable of substantially conducting electricity, while the area within emission surface 106 remains undoped.
  • the LED might include non-ohmic materials positioned between electrical contacts and the top surface of the LED, which can prevent current from being transferred from the electrical contacts through the LED.
  • the emission surface would not include the areas of the top surface that are covered by the non-ohmic material.
  • the emission area can correspond to the areas that are not covered by non-ohmic materials, assuming emission through the uncovered regions is not otherwise prevented (e.g., by doping or by covering with an opaque material).
  • non-ohmic material can be positioned over region 111 of top surface 110 such that electricity cannot be transferred through region 111 is incapable of substantially conducting electricity, while the area within emission surface 106 remains uncovered. In such an embodiments, when an electric potential is applied across LED 101, current will be transported only through region 106, and, thus, light will be emitted only through region 106.
  • the shape of the light being emitted by the LED can be altered such that it substantially corresponds to the shape of an input aperture downstream of the emitter output aperture.
  • FIG. IF is a perspective view illustration of a system in which an emitter output aperture is employed.
  • LED 101 comprises a substantially rectangular emission surface 106.
  • LED package layer 120 which is positioned over emission surface 106, includes emitter output aperture 122, which is circular in shape.
  • portion 102 of the electromagnetic radiation emitted by LED 101 is transmitted through aperture 103.
  • portion 112 can be reflected by material 113 back toward emission surface 106. Such reflection can be achieved when material 113 is a reflective material such as a metal.
  • emitter output aperture 122 proximate LED 101, a circular emission profile can be created from substantially rectangular emission surface 106.
  • the emitter output aperture and the top surface of the LED can be positioned relatively close to one another.
  • the shortest distance between the emitter output aperture and a light-emitting die is less than about 1 centimeter, less than about 1 millimeter, less than about 500 microns, or less than about 100 microns. In certain embodiments, positioning the emitter output aperture close to the LED can reduce the amount of light that is lost from the system.
  • the emission surface of the LED and/or the emitter output aperture associated with the LED can be configured to have any desirable shape.
  • a light-emitting diode with a circular emission surface could be used (e.g., in a system with a circular input aperture), such as emissions surface 106 illustrated in FIG. IE.
  • a substantially circular emitter output aperture can be associated with the LED, such as emitter output aperture 122 illustrated in FIG. IF.
  • the invention is not limited to the use of circular emission surfaces and circular emitter output apertures, and that improved performance can also be achieved using other non- square emission surface shapes and/or other non- square emitter output aperture shapes (including non-rectangular emission surface shapes and/or non-rectangular emitter output aperture shapes).
  • the light- emitting diode can include an emission surface and/or an emitter output aperture having a shape that, while not perfectly circular, is substantially circular.
  • the light-emitting diode can include an emission surface and/or an emitter output aperture that has an elliptical shape, an ellipsoidal shape, or a shape that otherwise includes curved edges.
  • the emission surface of the light-emitting diode and/or an emitter output aperture associated with a light-emitting diode can be in the shape of a polygon with at least 5 sides (e.g., a polygon with at least 6, at least 7, at least 8, at least 9, at least 10, at least 15, at least 20, at least 50, or at least 100 sides).
  • the emission surface and/or emitter output aperture of the light-emitting diode can include fewer than 1000 or fewer than 100 sides.
  • an emitter including a polygonal emission surface having 5 or more sides and/or emitter output aperture can approximate the effect observed in systems employing circular emission surface geometries, with a greater number of polygon sides more closely approximating the performance of a circular emission surface.
  • the shape of the emission surface and/or emitter output aperture is polygonal, the polygon can be a substantially regular polygon.
  • FIG. 1G is a perspective view schematic illustration of a system in which LED 101 includes an emission surface in the shape of a five-sided polygon. Specifically, emission surface 106 in FIG. 1G is a substantially regular pentagon.
  • FIG. 1H is a perspective view schematic illustration of a system in which emitter output aperture 122 is in the shape of a substantially regular pentagon.
  • emitter output aperture 122 is in the shape of a substantially regular pentagon.
  • the use of emission surfaces and/or emitter output apertures with substantially regular polygonal shapes more closely approximates the use of devices that have circular emission surfaces.
  • the invention is not limited to the use of emission surfaces and emitter output apertures in the shape of substantially regular polygons, and, in other
  • the emission surface can be in the shape of an irregular polygon.
  • the shape of the emission surface of the LED and/or the shape of the emitter output aperture associated with the LED can substantially correspond to (i.e., have substantially the same shape as) the shape of the input aperture of an optical system in which the LED is used.
  • the shape of emission surface 106 substantially corresponds to the shape of input aperture 103.
  • the shape of emitter output aperture 122 substantially corresponds to the shape of input aperture 103.
  • Determining whether the shapes of two objects substantially correspond to each other is generally performed as follows. First, one arranges the shapes that are to be compared over each other such that overlap is maximized.
  • Maximizing the overlap of two shapes may involve increasing the size of the smaller shape relative to the size of the larger shape while maintaining the aspect ratio and general shape of the smaller shape (e.g., in cases where the input aperture is a different size (e.g., larger) than the emission surface or the emitter output aperture).
  • a perfect circle with a 1 mm diameter would completely overlap a perfect circle with a 10 mm diameter because the size of the 1-mm diameter circle can be increased (while maintaining the aspect ratio and general shape of the 1-mm diameter circle) such that it completely overlaps the 10-mm diameter circle.
  • the 1-mm diameter circle and the 10-mm diameter circle would be said to have a percentage overlap of 100%, as described below.
  • a 0ve riap corresponds to the surface areas of the compared objects that overlap and corresponds to the surface areas of the compared objects that do not overlap.
  • the shapes are considered to substantially correspond to each other if the percentage overlap is at least about 90%, in certain embodiments.
  • two objects that have shapes that substantially correspond to each other have a percentage overlap of at least about 95%, at least about 99%, or substantially 100% (e.g., in the case of two substantially circular objects).
  • emission surface shape 104 has been arranged over input aperture shape 105 such that the area of overlap 130 between shapes 104 and 105 has been maximized.
  • the area of region 130 would be divided by the sum of the areas of regions 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, and 140.
  • the percentage overlap is greater than 90%. Accordingly, shapes 104 and 105 in FIG. II substantially correspond to each other.
  • a light-emitting diode with a substantially circular emission surface and/or a substantially circular emitter output aperture can be used in a system with a substantially circular input aperture. Replacing a square emission surface with a circular emission surface matched to the input aperture increases the coupled emitting area by a factor of 4/pi (or 1.27), assuming constant flux density across the emitter's surface.
  • This circular geometry can increase lumens/etendue for the system. Similar lumens/etendue could be achieved by using an oversized die as in FIG.
  • the input aperture of the system can be polygonal (e.g., a substantially regular polygon) having n sides and the active emission surface of the LED and/or the emitter output aperture associated with the LED can be polygonal (e.g., a substantially regular polygon) having n sides (e.g., where n is at least 5).
  • the input aperture of the system can be substantially circular and the emission surface of the LED and/or the emitter output aperture can be polygonal (e.g., a substantially regular polygon) having n sides, wherein n is at least 5.
  • the emission surface of the LED and/or the emitter output aperture can be polygonal (e.g., a substantially regular polygon) having n sides, wherein n is at least 5.
  • input aperture 103 is substantially circular while emission surface 106 of LED 101 is polygonal (having five sides).
  • input aperture 103 is substantially circular while emitter output aperture 122 is polygonal (having five sides).
  • the shape of the LED die can substantially correspond to the shape of the emission surface.
  • the LED die can be non- rectangular (e.g., having a shape corresponding to any of the shapes of the emission surfaces described elsewhere herein).
  • the LED die can be curved (e.g., circular, substantially circular, elliptical, ellipsoidal, or otherwise curved), polygonal with at least 5 sides, or any other shape described herein. While such dies can be used in the systems and methods described herein, their use is often not preferred because fabricating non-rectangular dies can be prohibitively expensive and complicated, in many instances.
  • FIG. 2 includes an exemplary cross- sectional schematic illustration of LED 200 in the form of a packaged die, which can be used in accordance with certain
  • LED 200 includes a multi-layer stack 222 disposed on a submount 220.
  • multi-layer stack 222 includes a 320 nm thick silicon doped (n-doped) GaN layer 234 having a pattern of openings 250 in its upper surface 210.
  • Multi-layer stack 222 also includes, in FIG. 2, a bonding layer 224, a 100 nm thick silver layer 226, a 40 nm thick magnesium doped (p-doped) GaN layer 228, a 120 nm thick light-generating region 230 formed of multiple InGaN/GaN quantum wells, and a AlGaN layer 232.
  • FIG. 2 In FIG.
  • an n-side contact pad 236 is disposed on layer 234, and a p-side contact pad 238 is disposed on layer 226.
  • an encapsulant material e.g., epoxy having an index of refraction of 1.5
  • layer 244 does not extend into openings 250.
  • Light can be generated by LED 200 as follows.
  • P-side contact pad 238 can be held at a positive potential relative to n-side contact pad 236, which can cause electrical current to be injected into LED 200.
  • As the electrical current passes through light- generating region 230 electrons from n-doped layer 234 can combine in region 230 with holes from p-doped layer 228, which can cause region 230 to generate light.
  • Light- generating region 230 can contain a multitude of point dipole radiation sources that emit light (e.g., isotropically) within the region 230 with a spectrum of wavelengths characteristic of the material from which light-generating region 230 is formed.
  • the spectrum of wavelengths of light generated by region 230 can have a peak wavelength of about 445 nanometers (nm) and a full width at half maximum (FWHM) of about 30 nm.
  • the charge carriers in p-doped layer 228 generally have relatively low mobility compared to the charge carriers in the n-doped semiconductor layer 234.
  • placing silver layer 226 (which is conductive) along the surface of p-doped layer 228 can enhance the uniformity of charge injection from contact pad 238 into p-doped layer 228 and light-generating region 230. This can also reduce the electrical resistance of device 200 and/or increase the injection efficiency of device 200.
  • silver layer 226 has relatively high thermal conductivity, allowing layer 226 to act as a heat sink for LED 200 (to transfer heat vertically from the multi-layer stack 222 to submount 220).
  • At least some of the light that is generated by region 230 can be directed toward silver layer 226. This light can be reflected by layer 226 and emerge from LED 200 via surface 210, or can be reflected by layer 226 and then absorbed within the semiconductor material in LED 200 to produce an electron-hole pair that can combine in region 230, causing region 230 to generate light. Similarly, at least some of the light that is generated by region 230 can be directed toward pad 236.
  • the underside of pad 236 can be formed of a material (e.g., a Ti/Al/Ni/Au alloy) that can reflect at least some of the light generated by light-generating region 230.
  • the light that is directed to pad 236 can be reflected by pad 236 and subsequently emerge from LED 200 via surface 210 (e.g., by being reflected from silver layer 226), or the light that is directed to pad 236 can be reflected by pad 236 and then absorbed within the semiconductor material in LED 200 to produce an electron-hole pair that can combine in region 230, which can cause region 230 to generate light (e.g., with or without being reflected by silver layer 226).
  • emitting surface 210 of the LED has a dielectric function that varies spatially which can improve the extraction efficiency of light generated by the LED and may enable the high power levels described further below.
  • the dielectric function can vary spatially according to a pattern.
  • the pattern may be periodic (e.g., having a simple repeat cell, or having a complex repeat super-cell), periodic with de-tuning, or non-periodic.
  • non-periodic patterns include quasi-crystal patterns, for example, quasi-crystal patterns having 8-fold symmetry.
  • the emitting surface is patterned with openings which can form a photonic lattice.
  • Suitable LEDs having a dielectric function that varies spatially have been described in, for example, U.S. Patent 6,831,302 B2, entitled “Light Emitting Devices with Improved Extraction Efficiency,” filed on November 26, 2003, which is herein incorporated by reference in its entirety.
  • performance can be enhanced by placing cover slip 240 close to the top surface of the LED or by eliminating the cover slip 240 from the LED package. In some embodiments, performance can be enhanced by replacing encapsulant material 244 with air such that the LED emits directly into air.
  • the LED shown in FIG. 2 is illustrated as having the n-side contact pad 236 on the top of the LED and the p-side contact pad 238 is on the bottom of the LED, it should be understood that the LED in FIG. 2 is merely illustrative and that, in other embodiments (e.g., in embodiments in which the LED is fabricated according to a flip- chip process), the p-side contact pad may be on top.
  • the emission surface can be constructed to have a different shape than the shape of the light-emitting die by covering a portion of the top surface of the LED with an opaque material that does not permit substantial transmission of light through the material, thereby defining a non-rectangular area through which light is emitted.
  • the covering material can be reflective such that at least a portion of the light generated by the LED that is incident upon the covering material is reflected back into the LED.
  • the material used to cover a portion of the top surface of the LED can be the top-side electrical contact.
  • the top side electrical contact e.g., the n-side contact pad 236 in the LED of FIG. 2 and/or a p-side contact pad in an LED fabricated according to a flip-chip method
  • the top side electrical contact can cover a portion of the top surface of the LED to define a non-rectangular emission region (e.g., having any of the non-rectangular emission surface shapes described herein) through which light generated by the LED can be emitted.
  • the n-side ohmic contact can be constructed such that the percentage coverage is maintained or reduced going from the edge of the device toward the center of the device.
  • the material used to cover a portion of the top surface of the LED can be used as bond-pads for the packaging process (e.g., for wire-bonds or flip chip connections).
  • FIGS. 3A-3C include exemplary schematic illustrations of LED top surface configurations in which a non-transmissive material is used to cover a portion of the top surface of the LED.
  • non-transmissive material covers portions 310.
  • portions 312 are left exposed such that light can be emitted through them.
  • portions 310 define a substantially circular emission surface, the boundaries of which are indicated by dotted line 314. Despite the presence of non-transmissive material within the boundaries of emission surface 314, the emission surface would remain substantially circular because light can be diffracted around the portions of the non-transmissive material within the dotted line of FIG. 3A.
  • Another way in which the emission surface of the LED can be constructed to have a different shape than the shape of the LED die is to fabricate the LED such that only a desired emitting area (e.g., circular, polygonal, etc.) is active.
  • a desired emitting area e.g., circular, polygonal, etc.
  • This can be achieved, for example, by configuring the light-emitting device to selectively activate a portion of the light-generating region to produce a non-rectangular active emission area during use.
  • Selectively activating a portion of the light-generating region can be accomplished, for example, by arranging the electrodes and/or underlying non-ohmic material such that current is supplied predominantly to the portions of the epitaxial layers within the desired emission area.
  • Selectively activating a portion of the light-generating region can also be accomplished, for example, by doping a portion of the top layer of the LED such that electricity cannot be substantially conducted through the doped portion, thereby forcing the electricity to be conducted through the non-doped portion.
  • the flow of electricity through the LED can be controlled such that the light-generating region is activated only under a portion of the top layer of the LED (e.g., layer 234 in FIG. 2). When only a portion of the light-generating region is activated, the light will generally emerge from the LED having substantially the same shape as the portion of the light-generating region that has been activated.
  • the portions of the top layer of the LED through which electricity is not transported are said to be "unpumped.” While the unpumped area may be seen as “wasted epi,” with careful design, some of the unpumped area can be used as a bonding area, which would otherwise be taken up along the edges of a standard rectangular die in any case. Furthermore, for some applications (e.g., some critical high performance applications), the drawback of including an unpumped area is justified by the thermal and optical performance enhancement of the design.
  • the current injection in the LED can be controlled such that a relatively large amount (e.g., most or substantially all) of the current is injected through a non-rectangular portion of the top surface of the LED.
  • the current injection into the LED can be controlled such that most of the current that is injected into the LED is injected within the outer boundaries of a circular emission region (e.g., the region including and within dotted line 314 in FIG. 3A).
  • a circular emission region e.g., the region including and within dotted line 314 in FIG. 3A.
  • the injection of current into the LED can be controlled by incorporating layers of non-ohmic material (also referred to as current-blocking layers) that block current from flowing from the electrodes to portions of the top surface of the LED adjacent the electrodes.
  • non-ohmic materials can be used for this purpose.
  • the non-ohmic material has a lower electrical conductivity (i.e., higher resistivity) than that of the conductive electrodes formed over the non-ohmic material.
  • non-ohmic material may include insulators such as oxides and nitrides (e.g., silicon oxide and silicon nitride).
  • the non- ohmic material may include Schottky metals (i.e., Schottky contact materials). Suitable Schottky metals may depend on the material used to form the conductive electrodes and/or the particular material used to form the top surface of the LED (e.g., n-doped layer 234 in FIG. 2).
  • a top surface formed of GaN may include contact members with non-ohmic portions comprising indium- tin oxide (ITO).
  • ITO indium- tin oxide
  • current blocking layers can be formed using a dielectric material.
  • the non-ohmic material can be positioned underneath (e.g., directly underneath) portions of the top side ohmic contact (e.g., n-type contact 236 in FIG. 2) in regions where current transfer to the top surface of the LED are undesired, such as regions near the outside edges of the LED. Arranging the dielectric material in this way can force current to the center of the LED.
  • a dielectric material can be formed underneath the top-side ohmic contact in the regions under corners 316, which can force current to be injected into the LED only within region 314.
  • current blocking layers can be formed underneath (e.g., directly underneath) the bottom-side ohmic contact (e.g., p-type contact 238 in FIG. 2) by including a region formed underneath the bottom- side ohmic contact.
  • a p-ohmic disruption POD can be formed underneath a bottom side p-type contact, which can force current to spread more efficiently.
  • current flow through the LED can be controlled by controlling the shape of the electrode opposite the emission surface of the LED (e.g., electrode 238 in FIG. 2).
  • the electrode opposite the emission surface of the LED can be non-rectangular (e.g., substantially circular, elliptical, polygonal with 5 or more sides, or any other of the non-rectangular shapes described herein).
  • the current can be shaped such that it is transported through the top layer according to the same non- rectangular shape. For example, if the bottom electrode is substantially circular, the electrical current is generally transported through the LED in the shape of a cylinder, which can result in a substantially circular active emission area.
  • partial activation of the light-generating region can be achieved by selectively implanting ions into the n-type layer, the light generating layer, and/or the p-type layer to laterally isolate at least one light-generating region from the other portions of the LED.
  • ions can be implanted into the n-type layer, the light generating layer, and/or the p-type layer underneath portions 310 such that current cannot be injected through the portions of the n-type layer, the light generating layer, and/or the p-type layer lying underneath portions 310. This can force electrical current through portions 312 of the LED, thereby defining a non-rectangular active emission surface.
  • the activated emission areas can have any of the non-rectangular shapes described herein (e.g., circular, substantially circular, elliptical, ellipsoidal, otherwise curved, polygonal with 5 or more sides, etc.).
  • a portion of the n-type layer (e.g., layer 234 in FIG. 2), the light generating region (e.g., region 230 in FIG. 2), and/or the p-type layer (e.g., layer 228 in FIG. 2) can be physically removed such that one or more laterally isolated light- generating regions are formed.
  • This can involve, for example, etching the n-type layer, the light-generating layer, and/or the p-type layer to form one or more laterally separated, individual light-generating mesas.
  • the mesas can have any of the non-rectangular shapes described herein (e.g., circular, substantially circular, elliptical, ellipsoidal, otherwise curved, polygonal with 5 or more sides, etc.).
  • FIGS. 4A is a schematic illustration outlining the components that can be included in a mesa.
  • mesa 410 can be formed by removing the n-type layer, the light-generating region, and/or the p-type layer from regions 412.
  • N-type electrodes 414 can be used to make electrical contact with the emission surface of mesa 410.
  • p-type electrodes can be located at the base of mesa 410.
  • FIG. 4B is a schematic illustration of the layout of components on another mesa. In FIG. 4B, rather than removing all of the material surrounding the mesa, mesa 410 is formed by removing narrow strips 420 of the n-type layer, the light-generating region, and/or the p-type layer.
  • the light-emitting device can be arranged such that it includes a plurality of mesas and an emission area defined by the emission surfaces of the mesas.
  • each mesa comprises an independent light- generating region (e.g., by etching through the light-generating region in areas surrounding the mesas).
  • At least one of the mesas comprises an emission surface having a substantially circular sector shape.
  • the phrase "circular sector” is given its normal mathematical definition, and refers to a portion of a circle enclosed by two radii and an arc.
  • the arc spans an angle defined by the two radii of equal to or less than about 90°.
  • FIG. 5 A includes a top-view schematic illustration of a light-emitting device, according to one set of embodiments, in which a plurality of mesas 502 are arranged in four circular sectors, each circular sector comprising an arc that spans an angle of about 90° between the two radii.
  • Mesas 502 can be formed, for example, by etching isolation regions 504 between mesas 502 (e.g., by etching the n-type layer, the light-generating region, and/or the p-type layer).
  • an independently-addressable electrode is positioned over each of mesas 502.
  • the light-emitting device can comprise a plurality of mesas in which a first mesa has an emission surface with a substantially circular perimeter, and a second mesa has an emission surface with a substantially circular perimeter and is circumscribed by the emission surface of the first mesa.
  • FIG. 5B includes a top-view schematic illustration of a light-emitting device, according to one set of embodiments, in which a mesa has been divided into such circular sections.
  • first mesa 510 and second mesa 512 each have an emission surface with a substantially circular perimeter.
  • the emission surface of second mesa 512 is circumscribed by the emission surface of mesa 510.
  • FIG. 5B also includes a third mesa 514 having a circular emission surface.
  • the emission surface of third mesa 514 is circumscribed by the emission surfaces of mesas 510 and 512.
  • Mesas 510, 512, and 514 can be formed, for example, by etching isolation regions 504 between the mesas (e.g., by etching the n-type layer, the light- generating region, and/or the p-type layer).
  • an independently- addressable electrode is positioned over each of mesas 510 and 512 (and, in certain embodiment, over mesa 514).
  • FIG. 5C includes a schematic illustration of a set of embodiments in which a mesa has been divided into a combination of pie and circular shapes.
  • an independently-addressable electrode can be positioned over each of mesas 502.
  • the current distribution can be adjusted so as to allow the emission geometry to match the etendue of different optical systems.
  • an emission area can be defined by the emission surfaces of the mesas.
  • the emission area defined by the emission surfaces of the mesas can have a non-rectangular perimeter.
  • the emission surfaces of the mesas define an emission area having a perimeter corresponding to circle 540.
  • the perimeter of the emission area defined by the emission surfaces of the mesas can have any of the shapes described herein with respect to the emission surfaces and/or the emitter output apertures (e.g., elliptical, polygonal, etc.). In some such embodiments, the shape of the perimeter of emission area defined by the emission surfaces can be any of the shapes described herein with respect to the emission surfaces and/or the emitter output apertures (e.g., elliptical, polygonal, etc.). In some such embodiments, the shape of the perimeter of emission area defined by the emission surfaces can be any of the shapes described herein with respect to the emission surfaces and/or the emitter output apertures (e.g., elliptical, polygonal, etc.). In some such embodiments, the shape of the perimeter of emission area defined by the emission surfaces can be any of the shapes described herein with respect to the emission surfaces and/or the emitter output apertures (e.g., elliptical, polygonal, etc.). In some such embodiments, the shape
  • FIGS. 6A-6C are top-view schematic illustrations of exemplary electrode layouts that can be used in association with the embodiments described herein. In some
  • electrodes 610 are arranged such that they only extend part of the way toward the center of the die, as illustrated, for example, in FIG. 6A. In some
  • the width of electrodes 610 decreases along a direction extended toward the center of the die, as illustrated in FIG. 6B.
  • electrodes 610 are fed from electrically isolated electrically conductive material 612 (e.g., metal) that contacts the electrodes, as illustrated in FIG. 6C.
  • Electrically conductive material 612 can be electrically isolated, for example, by positioning a non-ohmic material between the electrically conductive material and the top surface of the LED (e.g., n-type layer 234 in FIG. 2).
  • the isolated metal may be substantially thicker than the electrodes (e.g., at least 5 times or at least 10 times thicker) so as to reduce the voltage drop and improve current spreading.
  • the distribution metal can be electroplated, in some embodiments.
  • the light-emitting diode can be transferred to a second substrate (e.g., a submount).
  • the second substrate can be electrically isolated from the top side epitaxial layer (e.g., the top side n-type layer in FIG. 2).
  • the top side epitaxial layer e.g., the top side n-type layer in FIG. 2.
  • such an arrangement can allow one to wire the mesas in series, allowing the device to operate at higher voltages.
  • top- side electrodes can be modified depending on the mesa design. For example, in some embodiments, individual electrode segments can be addressed without addressing other electrode segments. In some embodiments, the current flowing into the electrode segments can be adjusted to achieve a desired light output.
  • the emission surface can include a variation in its dielectric function (e.g., the emission surface can be roughened and/or the emission surface can include a regular pattern such as a micro-structure, photonic lattice, or combination), and the variation in the dielectric function can be selectively positioned within the emission surface.
  • the variation in the dielectric function can be selectively positioned within the emission surface.
  • the light-emitting diodes described herein can be configured such that the emission surface has a relatively large emission surface area.
  • the emission surface can have an emission surface area of at least about 1 mm 2 , at least about 5 mm 2 , at least about 10 mm 2 , or at least about 100 mm 2 in some embodiments.
  • the surface area of the opening within the emitter output aperture can be relatively large, for example, having a surface area of at least about 1 mm 2 , at least about 5 mm 2 , at least about 10 mm 2 , or at least about 100 mm 2.
  • the light-emitting diode can be configured to emit most or all of the light generated by light-generating region 230 through at least a portion of upper surface 210.
  • Such light-emitting diodes are commonly referred to as “top- emitting” (as opposed to “side-emitting") light-emitting diodes.
  • at least about 75%, at least about 90%, at least about 95%, at least about 99%, or substantially all of the light that is emitted by any of the light-emitting diodes described herein is emitted through the top surface (e.g., a top emission surface such as emission surface 210 in FIG. 2).
  • a plurality of light-emitting dies can be used to define a cumulative emission area.
  • the arrangement of mesas 502 can be replaced with individual LED dies.
  • the plurality of light-emitting dies can each comprise light-generating regions and top surfaces and can together define a cumulative emission area (e.g., indicated by circle 540 in FIG. 5C).
  • Such an arrangement of LED dies can be used in association with any of the embodiments described herein, for example, replacing LEDs 106 described in any of FIGS. 1E-1H.
  • a system including the plurality of LED dies can include a substantially non-rectangular emitter output aperture positioned over the top surfaces of the light- emitting dies, configured such that light emitted by the light-emitting dies is transported through the emitter output aperture.
  • the system can further comprise an input aperture arranged to receive light generated by the light generating regions.
  • the shape of the emitter output aperture substantially corresponds to the shape of the input aperture.
  • the plurality of mesas can define a cumulative emission area having any desired shape, including substantially circular shapes, substantially elliptical shapes, polygonal shapes with 5 or more sides (regular or irregular), or any of the other emission area shapes described elsewhere here (e.g., with respect to emission area 106 or emitter output aperture 122).
  • the individual dies within the plurality of dies used to establish the cumulative emission area can have any suitable shape (e.g., including substantially rectangular (e.g., substantially square) or non-rectangular (e.g., circular, elliptical, etc.)).
  • a plurality of rectangular LED dies can be employed.
  • the rectangular LED dies can be used to define a non-rectangular cumulative emission area.
  • a plurality of substantially rectangular light-emitting dies 106 are arranged to define a substantially circular cumulative emission area 540.
  • the plurality of LEDs can be arranged to define a rectangular cumulative emission area, as illustrated in FIG. 5E.
  • an emitter output aperture (e.g., having a non-rectangular shape, such as a substantially circular shape, a polygonal shape with a least 5 sides, etc.) can be placed over the plurality of LEDs, for example, to alter the shape of the light transmitted to the input aperture.
  • LEDs Although the description herein primarily involves the configuration of the emission surface in relation to LEDs, it is to be understood that the configurations of the invention can be used with other light-emitting devices. For example, various embodiments presented herein can also be applied to other light-emitting dies (e.g., laser diode dies) and LED dies having different structures (such as organic LEDs, also referred to as OLEDs).
  • OLEDs organic LEDs
  • optical efficiency for etendue limited optical systems can be increased.
  • improved thermal performance can be achieved by, for example, improving heat transport from unpumped areas around the emission surface.
  • the systems described herein can exhibit relatively high optical uniformity, for example, due to circular symmetry.
  • the systems described herein can include independently addressable annular contacts, which can be useful in electronic zoom applications.
  • the LEDs described herein can be employed in a gobo spotlight (a system with a hard circular aperture stop ("gate”) typically proceeded by a condenser element and the LED).
  • a gobo spotlight a system with a hard circular aperture stop (“gate") typically proceeded by a condenser element and the LED.
  • the LEDs described herein can be used in a profile spotlight - a system that may comprise multiple LED sources (of the same or different colors and/or chromaticities), each with its own condenser element and the output of each directed through the same circular aperture stop or "gate.”
  • This devices described herein can be particularly useful in such devices as the condenser size for a given desired beam angle becomes larger if the optic is oversized to collect all the light from a square emitter. This larger size limits the packing density of the individual LED/condenser modules which increases the crossing angle of their beams through the gate, increasing etendue.
  • the LEDs described herein can also be used in fiber bundle illumination systems, where fiber bundle (typically a round fiber bundle) is illuminated by an LED either by direct butt coupling or through a relay optic.
  • the LEDs described herein can also be useful in DMD projection displays, in which the aperture stop is the rectangular DMD chip which is designed to the desired display aspect ratio, e.g. 4x3 or 16x9. Light falling outside this stop represents optical loss and possibly reduced contrast if any of the lost light is scattered back into the output optical system.
  • the aperture stop is the rectangular DMD chip which is designed to the desired display aspect ratio, e.g. 4x3 or 16x9. Light falling outside this stop represents optical loss and possibly reduced contrast if any of the lost light is scattered back into the output optical system.
  • Critical illumination systems are known to those of ordinary skill in the art.
  • Critical illumination systems generally use a relay lens to image a light source directly on to an object that is to be illuminated.
  • a projection lens images the object on to a screen.
  • the input aperture i.e., the aperture stop
  • FIG. 7A An exemplary schematic illustration of a critical illumination system in which the object to be imaged is located between the relay lens and the projection lens is illustrated in FIG. 7A.
  • An exemplary schematic illustration of a portion of the critical illumination system between the object and the screen is illustrated in FIG. 7B.
  • the source is imaged on to the object.
  • the object may be square, rectangular, polygon, circular or a number of other shapes depending on the optical system. In most cases, the object forms a defined aperture through which light can pass.
  • any of the LEDs described herein can be configured to be used in a critical illumination system such that the shape of the emission surface of the LED and/or the shape of the emitter output aperture substantially corresponds to the shape of the object that is to be imaged.
  • any of the LEDs described herein can be configured to be used in a critical illumination system in which a homogenizing optical element is employed such that the shape of the emission surface of the LED and/or the shape of the emitter output aperture substantially corresponds to the shape of the object that is to be imaged and the shape of the homogenizing optical element.
  • the LEDs described herein can also be particularly useful in Kohler illumination systems.
  • Kohler illumination systems are known to those of ordinary skill in the art.
  • Kohler illumination uses a relay lens to image a source of light onto the pupil of a projection lens, which images the object on to a screen.
  • the object to be illuminated is positioned between the relay lens and projection lens.
  • the input aperture i.e., the aperture stop
  • FIG. 8A An exemplary schematic illustration of a Kohler illumination system is illustrated in FIG. 8A.
  • FIG. 8B is a schematic illustration of a portion of a Kohler illumination system from the projection lens to the screen.
  • any of the LEDs described herein can be configured to be used in a Kohler illumination system such that the shape of the emission surface of the LED and/or the shape of the emitter output aperture substantially corresponds to the shape of the object that is to be imaged.
  • the light source is imaged on to the pupil of the projection lens.
  • the object resides in a plane located between the relay lens and projection lens. Since the location of the object does not coincide with the second focus of the relay lens, the shape of the illumination at the object plane does not depend on the shape of the source, and the shape of the illumination at the object plane will not necessarily have the same shape as that of the source.
  • the source's radial dimensions generally should be as small as possible.
  • a structure e.g., layer, region
  • it can be directly on the structure, or an intervening structure (e.g., layer, region) also may be present.
  • a structure that is “directly on” or “in contact with” another structure means that no intervening structure is present.
  • This example describes an optical simulation of a critical illumination system.
  • the source was defined as a square (1: 1 aspect ratio) LED with an emission area of 1mm .
  • the LED was imaged on to an object defined as a circular aperture with an area of 1mm .
  • the maximum efficiency with which the source is transmitted through the object is the defined by the percentage of the area of the source that resides within the boundaries defined by the object, as illustrated in FIG. 7C.
  • the transmission efficiency can be increased by either decreasing the size of the source or increasing the size of the object. Neither option is generally a desirable solution for the following reasons. If the source size is decreased, the luminous flux from the source will be decreased, thereby reducing the brightness of the projected image. Additionally, if the source size is decreased, the area of the object that is not illuminated will increase, thereby increasing non-uniformity in the projected image.
  • the size of the object is increased, the area of the object that is not illuminated will increase, thereby increasing non-uniformity in the projected image. Additionally, if the size of the object is increased, the size of the projection lens required to collect the same amount of light will increase, thereby increasing the size of the optical system. The most efficient transfer of light from the source through the object will occur if the shape of the source and object are the same.
  • Case 1 In the first case, the source was round and the object was round, with the source area equal to object area. The transfer efficiency of light from source through object was 1.0.
  • FIG. 7E is a simulated image of the light at the source
  • FIG. 7F is a simulated image of the light at the object
  • FIG. 7G is a simulated image of the light at the screen.
  • Case 2 In the second simulated case, the source was square and the object was round, with the source area equal to object area. The transfer efficiency of light from the source through the object was 0.91.
  • FIG. 7H is a simulated image of the light at the source
  • FIG. 71 is a simulated image of the light at the object
  • FIG. 7J is a simulated image of the light at the screen.
  • Case 3 In the third simulated case, the source was square and the object was round, and the source area was configured to completely fill the object area. The resulting transfer efficiency of light from source through object was 0.79.
  • FIG. 7K is a simulated image of the light at the source
  • FIG. 7L is a simulated image of the light at the object
  • FIG. 7M is a simulated image of the light at the screen.
  • Case 4 In the fourth simulated case, the source was square and the object was round, with the source area contained within the object area. The resulting transfer efficiency of light from the source through the object was 1.0.
  • FIG. 7N is a simulated image of the light at the source
  • FIG. 70 is a simulated image of the light at the object
  • FIG. 7P is a simulated image of the light at the screen.
  • This example describes an optical simulation of a Kohler illumination system.
  • the source shape was varied and compared with the illumination at the object plane and at the pupil of the projection lens. In all of the simulated cases described below, the source size remains constant.
  • Case 1 In the first simulated case, the source was square in shape.
  • FIG. 8D is a simulated image of the light at the source
  • FIG. 8E is a simulated image of the light at the object
  • FIG. 8F is a simulated image of the light at the projection lens pupil.
  • Case 2 In the second simulated case, the source was round in shape.
  • FIG. 8G is a simulated image of the light at the source
  • FIG. 8H is a simulated image of the light at the object
  • FIG. 81 is a simulated image of the light at the projection lens pupil.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

La présente invention concerne des diodes électroluminescentes (DEL) ainsi que des composants, processus, systèmes et procédés apparentés. Dans certains modes de réalisation, une DEL qui assure un rendement optique et thermique amélioré lorsqu'elle est utilisée dans des systèmes optiques dotés d'une ouverture d'entrée non rectangulaire (par ex. une ouverture circulaire) est décrite. Dans certains modes de réalisation, il est possible de donner à la surface d'émission de la DEL et / ou une ouverture de sortie d'émetteur une forme (par ex. une forme non rectangulaire) telle que des rendements optique et thermique renforcés soient réalisés. De plus, dans certains modes de réalisation, des modèles de pastilles et des processus susceptibles d'être employés afin de produire de tels dispositifs sont décrits.
PCT/US2012/044606 2011-06-28 2012-06-28 Architectures de diodes électroluminescentes pour des performances renforcées WO2013003569A2 (fr)

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CN201280042011.5A CN103828071B (zh) 2011-06-28 2012-06-28 用于增强性能的发光二极管结构

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GB201314793D0 (en) * 2013-08-19 2013-10-02 Cambridge Display Tech Ltd Lighting tiles
CN108020927A (zh) * 2016-11-01 2018-05-11 深圳市绎立锐光科技开发有限公司 一种光源系统及其调节方法
CN107940256A (zh) * 2017-12-21 2018-04-20 超视界激光科技（苏州）有限公司 Led光源模组
CN110808323A (zh) * 2019-11-05 2020-02-18 鸿利智汇集团股份有限公司 一种led封装方法
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EP2727156A4 (fr) 2015-05-27
WO2013003569A3 (fr) 2014-05-08
TW201312814A (zh) 2013-03-16
EP2727156A2 (fr) 2014-05-07
TWI664752B (zh) 2019-07-01
EP2727156B1 (fr) 2021-03-24
US20130146932A1 (en) 2013-06-13
CN103828071B (zh) 2018-08-07
CN103828071A (zh) 2014-05-28
US9627582B2 (en) 2017-04-18

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