WO2013002899A1 - Dielectric recovery of plasma damaged low-k films by uv-assisted photochemical deposition - Google Patents

Dielectric recovery of plasma damaged low-k films by uv-assisted photochemical deposition Download PDF

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Publication number
WO2013002899A1
WO2013002899A1 PCT/US2012/037822 US2012037822W WO2013002899A1 WO 2013002899 A1 WO2013002899 A1 WO 2013002899A1 US 2012037822 W US2012037822 W US 2012037822W WO 2013002899 A1 WO2013002899 A1 WO 2013002899A1
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carbon
dielectric film
film
films
dielectric
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PCT/US2012/037822
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French (fr)
Inventor
Kang Sub Yim
Thomas Nowak
Bo Xie
Alexandros T. Demos
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Applied Materials Inc
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Applied Materials Inc
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Priority to KR1020147000912A priority Critical patent/KR101451591B1/en
Priority to JP2014518560A priority patent/JP5992519B2/en
Priority to CN201280027958.9A priority patent/CN103608898A/en
Publication of WO2013002899A1 publication Critical patent/WO2013002899A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Definitions

  • Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant of low k films for semiconductor fabrication.
  • the dielectric constant (k) of dielectric films in semiconductor fabrication is continually decreasing as device scaling continues. Minimizing integration damage on low dielectric constant (low k) films is important to be able to continue decreasing feature sizes. However, as feature sizes shrink, improvement in the resistive capacitance and reliability of dielectric films becomes a serious challenge.
  • Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant of low k films for semiconductor fabrication.
  • a method of repairing a damaged low k dielectric film generally comprises positioning a dielectric film in a processing chamber, heating the processing chamber, flowing a carbon-containing precursor into the processing chamber, exposing the carbon-containing precursor and the dielectric film to ultra violet (UV) radiation, decomposing the carbon-containing precursor, and depositing carbon-containing compounds into pores of the dielectric film.
  • UV radiation ultra violet
  • Figures 1A-1 F illustrate a dielectric layer during various stages of processing.
  • Figures 2A-2B illustrate a dielectric layer having a thin carbon film during various stages of processing.
  • Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant (k-value) of low k films for semiconductor fabrication.
  • Figure 1A illustrates a dielectric film 100 deposited onto a structure 101 .
  • the structure 101 may be a substrate, such as, for example, a silicon wafer, or a previously formed layer, such as, for example, a metallization or interconnect layer.
  • the dielectric film 100 may be a porous silicon containing low k film, such as, for example, SiO 2 , Si+O+C, Si+O+N, Si+C+O+H, Si+O+C+N, or other related films.
  • the dielectric film 100 may have pores 102 formed therein.
  • Figure 1 B illustrates the dielectric film 100 after being planarized and etched to form features 104 into the dielectric film 100.
  • the dielectric film 100 may be planarized by a chemical mechanical planarization (CMP) process, for example.
  • CMP chemical mechanical planarization
  • the dielectric film 100 may be etched by masking a portion of the dielectric film 100, contacting the unmasked portion of the dielectric film 100 with a plasma formed from hydrofluoric acid (HF) vapor, and ashing away the mask using a plasma formed from oxygen (O 2 ) gas or CO 2 gas, for example.
  • HF hydrofluoric acid
  • O 2 oxygen
  • the planarization, ashing, and etching of the dielectric film 100 introduce hydrogen and/or water into the dielectric film 100 causing Si-OH groups to form, for example, which make the dielectric film 100 hydrophilic.
  • the hydrophilic property of the dielectric film 100 causes the pores 102 to fill with water creating damaged pores 103. Both the Si-OH groups and damaged pores 103 increase the k-value of the dielectric film 100.
  • the damage from the planarization and etching are usually localized to an upper portion of the dielectric film 100 and to the sidewalls of the features 104, as shown in Figure 1 B.
  • Figure 1 C illustrates the dielectric film 100 after being repaired by the repair processes described below.
  • the repair processes decrease the k-value of the dielectric film 100 by removing the water from the damaged pores 103, thereby creating repaired pores 105, and by converting the Si-OH groups in the dielectric film 100 into hydrophobic Si-O-Si(CH 3 ) 3 groups, for example.
  • the hydrophobic Si-O- Si(CH 3 ) 3 groups assist in driving water out of the damaged pores 103 of the dielectric film 100.
  • the dielectric film 100 may be repaired by an ultraviolet (UV) assisted chemical vapor deposition (CVD) process.
  • the UV-CVD process comprises contacting the dielectric film 100 with a carbon-containing compound in the presence of UV radiation to create the Si-O-Si(CH 3 ) 3 groups in the dielectric film 100 described above.
  • the UV-CVD process may be conducted by placing the dielectric film 100 into a processing chamber, heating the processing chamber, flowing a gas phase carbon-containing precursor into the processing chamber, engaging a source of UV radiation to contact the carbon-containing precursor and the dielectric film 100 with UV radiation, decomposing the carbon-containing precursor with the UV radiation, and depositing carbon-containing compounds into the damaged pores 103 of the dielectric film 100.
  • the UV radiation and the carbon-containing precursor are supplied simultaneously.
  • a thin carbon- containing film 201 may be deposited onto the repaired dielectric film 100 during the repair process, as seen in Figure 2A.
  • the thin carbon-containing film 201 may be up to 10A thick.
  • the thin carbon-containing film 201 may be optionally removed, as shown in figure 1 C, by sublimation or by diffusion into the dielectric film 100.
  • Suitable carbon-containing precursors include, but are not limited to, ethylene, acetylene, 1 ,3-butadiene, and isoprene.
  • the UV radiation may be adjusted to contain specific wavelengths which are absorbent by the particular carbon-containing precursor being used for efficiency in decomposing the carbon-containing precursor during the repair process.
  • 1 ,3-butadiene is highly absorbent to UV radiation having wavelengths between 200nm and 220nm
  • acetylene is highly absorbent to UV radiation having wavelengths between 120nm and 180nm.
  • the UV radiation may have wavelengths between 10nm and 400nm, for example between 20nm and 230nm.
  • the processing chamber may also be heated to a temperature beneficial to the decomposition of the carbon-containing precursor.
  • One advantage of using gas phase precursors is that the molecules can penetrate deeper into the film than liquid phase precursors. Also, the use of UV radiation is advantageous as the UV radiation assists in converting the Si-OH groups in the dielectric film 100 into hydrophobic Si-O-Si(CH 3 ) 3 groups.
  • the UV-CVD process may be conducted at a processing chamber pressure between 1 Torr and 100 Torr, such as 10 Torr, a dielectric film temperature between 0 °C and 400 °C, such as 200 °C, a carbon-containing precursor flow rate between 10 seem and 5000 seem, such as 500 seem, and a processing time between 5 sec and 300 sec, such as 30 sec.
  • a diffusion barrier 106 may be deposited into the features 104 of the dielectric film 100 and a metal material 107, such as, for example, copper or a copper alloy, may be deposited into the features 104, as seen in Figure 1 D.
  • the planarization and/or metal oxide removal processes may re-damage the surface of the dielectric film 100, as seen in Figure 1 E.
  • the dielectric film 100 may be repaired using the repair processes described above.
  • a thin carbon-containing film 202 similar to the carbon-containing film 201 , may be deposited onto the repaired dielectric film 100 during the repair process, as seen in Figure 2B.
  • the thin carbon-containing film 202 may be up to 10A thick.
  • the thin carbon-containing film 202 may be optionally removed, as shown in figure 1 F, by sublimation or by diffusion into the dielectric film 100.

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  • Formation Of Insulating Films (AREA)

Abstract

Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Description

DIELECTRIC RECOVERY OF PLASMA DAMAGED LOW-K FILMS BY UV- ASSISTED PHOTOCHEMICAL DEPOSITION
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant of low k films for semiconductor fabrication.
Description of the Related Art
[0002] The dielectric constant (k) of dielectric films in semiconductor fabrication is continually decreasing as device scaling continues. Minimizing integration damage on low dielectric constant (low k) films is important to be able to continue decreasing feature sizes. However, as feature sizes shrink, improvement in the resistive capacitance and reliability of dielectric films becomes a serious challenge.
[0003] Current techniques for the etching or ashing of dielectric films involve process chemistries which create water (H2O) as a byproduct. The water byproduct can be introduced into the deposited dielectric films, thereby increasing the k value of the dielectric film. Also, current techniques for the removal of copper oxides (CuO) and chemical mechanical planarization (CMP) residues involve the use of ammonia (NH3) or hydrogen (H2) plasmas. Removal of the copper oxides and CMP residues are necessary to improve the electromigration (EM) of the metallization structures and the time dependent dielectric breakdown (TDDB) of the ILD films. However, exposing low k films to NH3 and H2 plasmas modifies the film structure and increases the k value. Present repair techniques involve liquid phase silylation or use of supercritical CO2. However, such techniques have not proven effective for repairing sidewall damage of recessed features in the films.
[0004] Thus, a method for repairing the dielectric films to lower the k value is necessary to improve efficiency and allow for smaller device sizes. SUMMARY OF THE INVENTION
[0005] Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant of low k films for semiconductor fabrication.
[0006] In one embodiment, a method of repairing a damaged low k dielectric film is provided. The method generally comprises positioning a dielectric film in a processing chamber, heating the processing chamber, flowing a carbon-containing precursor into the processing chamber, exposing the carbon-containing precursor and the dielectric film to ultra violet (UV) radiation, decomposing the carbon-containing precursor, and depositing carbon-containing compounds into pores of the dielectric film.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0008] Figures 1A-1 F illustrate a dielectric layer during various stages of processing.
[0009] Figures 2A-2B illustrate a dielectric layer having a thin carbon film during various stages of processing.
DETAILED DESCRIPTION
[0010] Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant (k-value) of low k films for semiconductor fabrication.
[0011] Figure 1A illustrates a dielectric film 100 deposited onto a structure 101 .
The structure 101 may be a substrate, such as, for example, a silicon wafer, or a previously formed layer, such as, for example, a metallization or interconnect layer.
The dielectric film 100 may be a porous silicon containing low k film, such as, for example, SiO2, Si+O+C, Si+O+N, Si+C+O+H, Si+O+C+N, or other related films. The dielectric film 100 may have pores 102 formed therein.
[0012] Figure 1 B illustrates the dielectric film 100 after being planarized and etched to form features 104 into the dielectric film 100. The dielectric film 100 may be planarized by a chemical mechanical planarization (CMP) process, for example. The dielectric film 100 may be etched by masking a portion of the dielectric film 100, contacting the unmasked portion of the dielectric film 100 with a plasma formed from hydrofluoric acid (HF) vapor, and ashing away the mask using a plasma formed from oxygen (O2) gas or CO2 gas, for example.
[0013] The planarization, ashing, and etching of the dielectric film 100 introduce hydrogen and/or water into the dielectric film 100 causing Si-OH groups to form, for example, which make the dielectric film 100 hydrophilic. The hydrophilic property of the dielectric film 100 causes the pores 102 to fill with water creating damaged pores 103. Both the Si-OH groups and damaged pores 103 increase the k-value of the dielectric film 100. The damage from the planarization and etching are usually localized to an upper portion of the dielectric film 100 and to the sidewalls of the features 104, as shown in Figure 1 B.
[0014] Figure 1 C illustrates the dielectric film 100 after being repaired by the repair processes described below. The repair processes decrease the k-value of the dielectric film 100 by removing the water from the damaged pores 103, thereby creating repaired pores 105, and by converting the Si-OH groups in the dielectric film 100 into hydrophobic Si-O-Si(CH3)3 groups, for example. The hydrophobic Si-O- Si(CH3)3 groups assist in driving water out of the damaged pores 103 of the dielectric film 100.
[0015] In one embodiment, the dielectric film 100 may be repaired by an ultraviolet (UV) assisted chemical vapor deposition (CVD) process. The UV-CVD process comprises contacting the dielectric film 100 with a carbon-containing compound in the presence of UV radiation to create the Si-O-Si(CH3)3 groups in the dielectric film 100 described above.
[0016] For example, the UV-CVD process may be conducted by placing the dielectric film 100 into a processing chamber, heating the processing chamber, flowing a gas phase carbon-containing precursor into the processing chamber, engaging a source of UV radiation to contact the carbon-containing precursor and the dielectric film 100 with UV radiation, decomposing the carbon-containing precursor with the UV radiation, and depositing carbon-containing compounds into the damaged pores 103 of the dielectric film 100. In one embodiment, the UV radiation and the carbon-containing precursor are supplied simultaneously. A thin carbon- containing film 201 may be deposited onto the repaired dielectric film 100 during the repair process, as seen in Figure 2A. The thin carbon-containing film 201 may be up to 10A thick. The thin carbon-containing film 201 may be optionally removed, as shown in figure 1 C, by sublimation or by diffusion into the dielectric film 100.
[0017] Suitable carbon-containing precursors include, but are not limited to, ethylene, acetylene, 1 ,3-butadiene, and isoprene. Other suitable carbon-containing precursors include compounds containing double carbon-carbon bonds (C=C) and/or triple carbon-carbon bonds (CEC). The UV radiation may be adjusted to contain specific wavelengths which are absorbent by the particular carbon-containing precursor being used for efficiency in decomposing the carbon-containing precursor during the repair process. For example, 1 ,3-butadiene is highly absorbent to UV radiation having wavelengths between 200nm and 220nm, while acetylene is highly absorbent to UV radiation having wavelengths between 120nm and 180nm. The UV radiation may have wavelengths between 10nm and 400nm, for example between 20nm and 230nm. The processing chamber may also be heated to a temperature beneficial to the decomposition of the carbon-containing precursor.
[0018] One advantage of using gas phase precursors is that the molecules can penetrate deeper into the film than liquid phase precursors. Also, the use of UV radiation is advantageous as the UV radiation assists in converting the Si-OH groups in the dielectric film 100 into hydrophobic Si-O-Si(CH3)3 groups.
[0019] The UV-CVD process may be conducted at a processing chamber pressure between 1 Torr and 100 Torr, such as 10 Torr, a dielectric film temperature between 0 °C and 400 °C, such as 200 °C, a carbon-containing precursor flow rate between 10 seem and 5000 seem, such as 500 seem, and a processing time between 5 sec and 300 sec, such as 30 sec. [0020] After the dielectric film 100 has been repaired, subsequent processes may be performed to continue the fabrication of the semiconductor device. For example, a diffusion barrier 106 may be deposited into the features 104 of the dielectric film 100 and a metal material 107, such as, for example, copper or a copper alloy, may be deposited into the features 104, as seen in Figure 1 D. It may be necessary to planarize the metal material 107 and remove any oxides from the metal material 107 that may form during planarization. Common metal oxide removal techniques involve the use of hydrogen or ammonia plasmas. The planarization and/or metal oxide removal processes may re-damage the surface of the dielectric film 100, as seen in Figure 1 E. The dielectric film 100 may be repaired using the repair processes described above. A thin carbon-containing film 202, similar to the carbon-containing film 201 , may be deposited onto the repaired dielectric film 100 during the repair process, as seen in Figure 2B. The thin carbon-containing film 202 may be up to 10A thick. The thin carbon-containing film 202 may be optionally removed, as shown in figure 1 F, by sublimation or by diffusion into the dielectric film 100.
[0021] The repair processes described effectively lower the k-value of the damaged dielectric films thus enabling the continued scaling of semiconductor device features.
[0022] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:
1 . A method of repairing a damaged low k dielectric film, comprising:
positioning a dielectric film in a processing chamber;
heating the processing chamber;
flowing a carbon-containing precursor into the processing chamber;
exposing the carbon-containing precursor and the dielectric film to ultra violet (UV) radiation;
decomposing the carbon-containing precursor; and
depositing a carbon-containing compound into pores of the dielectric film.
2. The method of claim 1 , wherein the carbon-containing precursor comprises at least one of 1 ,3-butadiene and isoprene.
3. The method of claim 2, wherein the UV radiation has wavelengths between 200nm and 220nm.
4. The method of claim 1 , wherein the UV radiation has wavelengths between 20nm and 230nm.
5. The method of claim 1 , wherein the decomposing the carbon-containing precursor comprises decomposing the carbon-containing precursor with the UV radiation.
6. The method of claim 1 , wherein the processing chamber is at a pressure between 1 Torr and 100 Torr, the dielectric film is at a temperature between 0 °C and 400 °C, the carbon-containing precursor is flown into the processing chamber at a flow rate between 10 seem and 5000 seem, and the dielectric film is processed for a processing time between 5 sec and 300 sec.
7. The method of claim 1 , further comprising depositing a carbon-containing film on the dielectric film.
8. The method of claim 7, wherein the carbon-containing film is deposited to a thickness no greater than 10A.
9. The method of claim 7, further comprising removing the carbon-containing film from the dielectric film.
10. The method of claim 9, wherein the removing the carbon-containing film from the dielectric film comprises at least one of sublimating the carbon-containing film and diffusing the carbon-containing film into the dielectric film.
PCT/US2012/037822 2011-06-28 2012-05-14 Dielectric recovery of plasma damaged low-k films by uv-assisted photochemical deposition Ceased WO2013002899A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020147000912A KR101451591B1 (en) 2011-06-28 2012-05-14 Dielectric recovery of plasma damaged low-k films by uv-assisted photochemical deposition
JP2014518560A JP5992519B2 (en) 2011-06-28 2012-05-14 Restoration of plasma-damaged low-k dielectrics by UV-assisted photochemical deposition
CN201280027958.9A CN103608898A (en) 2011-06-28 2012-05-14 Dielectric recovery of plasma-damaged low-k films by UV-assisted photochemical deposition

Applications Claiming Priority (2)

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US13/171,132 US8216861B1 (en) 2011-06-28 2011-06-28 Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
US13/171,132 2011-06-28

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