WO2013001373A2 - Nanoteilchen für eine solartechnische anlage sowie eine solarzelle mit solchen nachteilchen - Google Patents
Nanoteilchen für eine solartechnische anlage sowie eine solarzelle mit solchen nachteilchen Download PDFInfo
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- WO2013001373A2 WO2013001373A2 PCT/IB2012/001800 IB2012001800W WO2013001373A2 WO 2013001373 A2 WO2013001373 A2 WO 2013001373A2 IB 2012001800 W IB2012001800 W IB 2012001800W WO 2013001373 A2 WO2013001373 A2 WO 2013001373A2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
- H01L31/03845—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material comprising semiconductor nanoparticles embedded in a semiconductor matrix
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to nanoparticles for a solar technology system for increasing the use of light, with a core selected from materials consisting of metals, metal alloys, semiconductors, electrically conductive non-metals, electrically conductive compounds and mixtures thereof and a solar cell with at least one such nanoparticle.
- a photovoltaic module with at least one solar cell is known, in which nanoparticles are incorporated for light amplification. These nanoparticles may have a certain geometry and arrangement to enhance incident light.
- the object of the present invention is therefore to develop a nanoparticle for a solar power plant of the type mentioned in such a way that they lead in a solar system or solar cell to a better light amplification than in the prior art.
- the object is achieved in that is arranged around the core at least a first shell.
- the core / shell principle applied to nanoparticles for a solar power plant gives the person skilled in the art a multitude of possibilities for physically and chemically manipulating nanoparticles in such a way that optimum light intensifications are achieved, depending on the application.
- a further advantage of the present invention is that at least one second sheath is arranged around the core at a greater distance from the core than one of the at least one first sheath.
- a first shell surrounds a core and then an arbitrary sequence of first and second shells are arranged.
- a first bonding layer is disposed between the core and the first shell. With the first bonding layer is achieved that between the core and the first shell good adhesion is generated.
- a second connection layer is arranged between the first sheath and the second sheath. With the second connection layer is achieved that between the first shell and the second shell each good adhesion is generated.
- Another advantage of the present invention with respect to a solar cell is that a plurality of nanoparticles are arranged in a semiconductor layer.
- the nanoparticles need not only be dispersed in the semiconductor layer but, in certain embodiments, also densely packed so as to form the semiconductor layer when one of the first and second shells is a semiconductor layer.
- gaps between the nanoparticles are filled with semiconductor material.
- the gaps between the nanoparticles are filled with other materials, e.g. As dielectric material or conductive material.
- Such a dense packing advantageously results from the fact that the plurality of nanoparticles is arranged such that at least some of the nanoparticles contact one another with the first or second shell and the contacting first or second shells of the nanoparticles form the semiconductor layer.
- FIG. 1 is a schematic circular nanoparticle having a core and having first and second shells according to a first embodiment of the present invention
- FIG. 2 is a schematic nanoparticle having a core, a first interconnect layer, a first shell and a second shell according to a second embodiment of the present invention
- FIG. 3 is a schematic nanoparticle having a core and first and second shells according to a third embodiment of the present invention
- FIG. 4 shows a schematic nanoparticle with a core, a first interconnection layer, a first shell, a second interconnection layer and a second shell according to a fourth embodiment of the present invention
- FIG. 5 shows a nanoparticle as in FIG. 1, but in an ellipsoidal shape
- FIG. 6 shows a nanoparticle as in FIG. 2, but in an ellipsoidal shape
- FIG. 7 shows a nanoparticle as in FIG. 3, but in an ellipsoidal shape
- FIG. 8 shows a nanoparticle as in FIG. 4 but in an ellipsoidal shape
- FIG. 9 shows a schematic partial view of a solar cell with nanoparticles according to FIG. 1;
- FIG. 10 shows a schematic solar cell with nanoparticles according to FIG. 5 but in different sizes
- FIG. 11 is a schematic solar cell with nanoparticles according to FIG. 4.
- Fig. 12 is a schematic solar cell with nanoparticles according to FIG. 1, sorted by size.
- FIG. 1 shows a schematic nanoparticle 1 which has a core 3, a first shell 5 enclosing the core 3 and a second shell 7 enclosing the first shell 5.
- first sheath 5 directly adjoin the core 3 and the second sheath 7 directly adjoin the first sheath 5.
- Fig. 2 the same nanoparticles 1 is basically shown, but in a second embodiment between the core 3 and the first shell 5 has a first connection layer 9.
- FIG. 3 shows, in a third embodiment, a nanoparticle 1 which resembles the nanoparticle 1 from FIG. 1 in its construction.
- the only difference is the property of the second shell 7.
- the first shell in FIG. 3 is usually a dielectric.
- the second shell 7 in Fig. 3 is usually made of another material, for example a photoactive Semiconductors, such as CIGS or Si.
- FIG. 4 shows a fourth embodiment of a nanoparticle 1.
- a second connection layer 11 is also formed between the first sheath 5 and the second sheath 7.
- the nanoparticle in FIG. 4 thus has a core 3, a first connection layer 9, a second enclosure 5, a second connection layer 11 and a second enclosure 7.
- the first shell in Fig. 4 is usually a dielectric.
- the second shell 7 in Fig. 4 is usually made of another material, for example, a photoactive semiconductor such as CIGS or Si.
- Fig. 5 shows a nanoparticle 1 in a variant of the first embodiment.
- the nanoparticle 1 is ellipsoid in this variant.
- FIG. 6 shows a variant of the second embodiment in FIG. 2.
- the nanoparticle 1 in FIG. 6 is also ellipsoidal.
- the nanoparticle 1 in FIG. 7 is an ellipsoid variant of the third embodiment of the nanoparticle 1 from FIG. 3.
- the nanoparticle 1 in FIG. 8 is likewise an ellipsoid variant of the nanoparticle 1 from FIG. 4.
- the core 3 is optionally made of metals, transition metals, semi-metals, conductive or semiconducting non-metal compounds, mixtures, alloys, and compounds of the foregoing materials.
- the production of cores is not the subject of the present invention.
- the person skilled in the art can produce the cores 3 for the application in question at will.
- the shape and size of the cores 3 of the nanoparticles 1 according to the present invention are either spherical or ellipsoidal, cylindrical or rod-shaped with and without rounded end pieces, conical or pyramidal, cubic or cuboidal, irregular or in the micro, nano or subnanometer scale variable in size.
- At least one first shell 5 should be added to the core according to the present invention.
- the at least one first shell 5 is intended to have certain chemical or physical properties which, in conjunction with the core 3 in a solar technology plant, provide amplification of light.
- first shell 5 should be present.
- the provision of a second shell 7 is optional and serves to optimize the properties of the nanoparticle 1 in the respective application.
- the shape and size of the first shell 5 or second shell 7 is preferably such that the first shell 5 adjacent to the core 3 lies fairly regularly around it.
- other forms are conceivable in other embodiments, for. B. pyramidal core in a ball shell.
- the thickness of the first sheath 5 and the second sheath 7 may vary from one atomic layer down to the micrometer range.
- the first sheath 5 and / or the second sheath 7 may be identical or different and may be connected directly to each other or to the core 3, or via one of the first bonding layer 9 and the second bonding layer 11.
- the first and / or second Shell 5, 7 thus consists either of nonconducting substances, for example halides, preferably for example fluorides, such as CaF 2 or MgF 2, chalcogenides, preferably oxides, etc.
- the first shell 5 and / or the second shell 7 can also be made of semiconducting materials Materials made of conductive materials (for example, TCO variants, translucent materials, light-absorbing and / or light-converting materials, for example, CIGS, CdTe, Si, organic semiconductors, etc.) and inorganic or organic substances.
- first sheath 5 and / or the second sheath 7 may also have special chemical and / or physical properties which cause the nanoparticles 1 to be arranged in a predetermined manner (to each other or to the surface in a local environment). This can lead to a dense or loosened monolayer or to a compact nanoparticle layer which is made up of a pure variety or a mixture of species.
- various interactions may be responsible, for example chemical or physical interactions, for example van der Waals, adhesion, ion forces or electrostatic or electromagnetic interactions.
- first connection layer 9 is provided between the core 3 and the first sheath 5 and the second connection layer 11 is provided between the first sheath 5 and the second sheath 7.
- first and second bonding layers 9, 11 are preferably made of organic or inorganic substances that mediate between the chemical and physical properties of sheath and core (first bonding layer 9) and between two adjacent sheaths (second bonding layer 11).
- Such organics may be organic compounds bearing various functional groups to allow adhesion to either side (core / shell, first shell / second shell, etc.).
- the first and second bonding layers 9, 11 are preferably as thin as possible.
- the outermost shell of a nanoparticle 1 is the second shell 7 in all figures and is shown schematically in a dashed line in FIGS. 1, 2, 5 and 6. In other embodiments, the outermost shell may also be the first enclosure 5. That depends entirely on the chosen alternation.
- FIG. 9 schematically shows a part of a solar cell 100 in which a plurality of nanoparticles 1 are arranged according to the first embodiment shown in FIG.
- FIG. 10 schematically shows a part of a solar cell in a variant in which the nanoparticles 1 shown in FIG. 5 have a different size.
- FIG. 11 shows schematically a part of a solar cell 100 in which nanoparticles 1 according to the fourth embodiment (FIG. 4) are arranged.
- FIG. 12 shows schematically a part of a solar cell 100 in which nanoparticles 1 according to the first embodiment (FIG. 1) are sorted in size.
- FIG. 12 shows schematically a part of a solar cell 100 in which nanoparticles 1 according to the first embodiment (FIG. 1) are sorted in size.
- different frequency ranges of the incident light can be optimally converted or amplified at respective penetration depths.
- shortwave light can interact optimally with the surface of possibly smaller nanoparticles 1
- long-wavelength, deeper penetrating light can optimally interact with possibly larger nanoparticles 1.
- the light is incident from the left side.
- the illustration in FIG. 12 can on the one hand represent a single solar cell whose active semiconductor contains a plurality of layers of nanoparticles 1, or on the other hand represent a multi-junction cell, which are arranged in stacks.
- the frequency ranges of the "light" acting on a solar cell 100 are not critical
- the present invention can be used in conjunction with all electromagnetic radiation, e.g., infrared / thermal radiation (e.g., thermo-photovoltaic), microwaves, etc.
- Nanoparticles 1 are applied in the production of one of the solar cells 100 in any desired variants, for example by spin coating, dipping, self-assembly, wet-chemical deposition, sol-gel method, segregation / aggregation, physical methods (for example distribution by electromagnetic properties or electrostatic properties and potentials), vapor deposition, printing techniques e.g. B. similar to ink jet printing, direct contact transfer, spray method. Nanoparticles can be generated and deposited completely or partially on or near the surface. This is usually done by wet chemical processes or physical production processes (for example, vapor deposition, plasma processes, etc.).
- the nanoparticles 1 may be applied between layers of the "embedding” material to be deposited separately.
- the layers are then located “above” and “below” and may have to be doped as an embedding material for the nanoparticles 1 Dielectrics, semiconductors, TCOs, where possible doping is required, and the respective encapsulant material may also fill the spaces between the nanoparticles 1.
- the outer shell has the sole purpose of organizing the distribution and / or adhesion of the nanoparticles 1 in the local environment, it might be possible and / or useful to chemically or physically remove the unnecessary parts of this shell. Outer sheaths can merge by targeted reaction. Such a fusion process improves the embedding of, in particular, the cores in a relatively homogeneous or uniform environment. If the outer shell consists of a photoactive semiconductor, a fusion of these shells could lead to at least larger contact areas eventually to the formation of a complete semiconductor layer. Thus, by reducing interfaces and the larger possible paths, the conductivity for generated electron-hole pairs is significantly improved.
- optimization parameters for the first sheath 5 and / or the second sheath 7 are, for example, the individual properties of the core 3 and the first sheath 5 and / or second sheath 7 result in the sum of macroscopic properties which are completely different from the core 3, the first shell 5 or the second shell 7 alone.
- An optical property is, for example, that the first shell 5 or the second shell 7 has a higher refractive index than surrounding layers. At oblique incidence of light, the light passes through the shell and interacts several times with the nanoparticles. 1
- the nanoparticles 1 in addition to the dielectric sheath also have a conductive sheath, which makes the conductive contact between the layers and allows the conduction of the charge carriers.
- a conductive sheath which makes the conductive contact between the layers and allows the conduction of the charge carriers.
- the nanoparticles 1 are surrounded by a photoactive semiconductor layer in which the charge carriers are generated. To ensure the technical function, they must be quickly trimmed and drained so that they do not recombine. This could be done by pulling in a TCO layer underneath the semiconductor layer and transferring the charge carriers over the inside of the nanoparticles 1 are derived.
- the TCO layers may also be arranged outside the semiconductor. In this case, the charges can be discharged outside. It is important that the doping, the conductivities and the pn-transitions are set correctly. Such adjustment is familiar to the person skilled in the art and not part of the invention.
- additional electrical contacts may be created to direct the electrons outward of the TCO layer.
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BR112013032971A BR112013032971A2 (pt) | 2011-06-30 | 2012-06-28 | nanopartícula para um sistema de energia solar e célula solar |
CN201280042095.2A CN103907200A (zh) | 2011-06-30 | 2012-06-28 | 用于太阳能发电系统的纳米颗粒以及具有该纳米颗粒的太阳能电池 |
US14/130,049 US20140224308A1 (en) | 2011-06-30 | 2012-06-28 | Nanoparticles for a solar power system as well as a solar cell with such nanoparticles |
MX2014000261A MX2014000261A (es) | 2011-06-30 | 2012-06-28 | Nanoparticulas para una planta solar y una celda solar que contiene tales nanoparticulas. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202011103301U DE202011103301U1 (de) | 2011-06-30 | 2011-06-30 | Nanoteilchen für eine solartechnische Anlage sowie eine Solarzelle mit solchen Nanoteilchen |
DE202011103301.9 | 2011-06-30 |
Publications (2)
Publication Number | Publication Date |
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WO2013001373A2 true WO2013001373A2 (de) | 2013-01-03 |
WO2013001373A3 WO2013001373A3 (de) | 2013-08-22 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/IB2012/001800 WO2013001373A2 (de) | 2011-06-30 | 2012-06-28 | Nanoteilchen für eine solartechnische anlage sowie eine solarzelle mit solchen nachteilchen |
Country Status (6)
Country | Link |
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US (1) | US20140224308A1 (de) |
CN (1) | CN103907200A (de) |
BR (1) | BR112013032971A2 (de) |
DE (1) | DE202011103301U1 (de) |
MX (1) | MX2014000261A (de) |
WO (1) | WO2013001373A2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016017763A1 (ja) * | 2014-07-30 | 2016-02-04 | 京セラ株式会社 | 量子ドット太陽電池 |
US20160293872A1 (en) * | 2015-04-03 | 2016-10-06 | Korea Institute Of Science And Technology | Inorganic nanomaterial-based hydrophobic charge carriers, method for preparing the charge carriers and organic-inorganic hybrid perovskite solar cell including the charge carriers |
Citations (1)
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WO2009043340A2 (de) | 2007-10-01 | 2009-04-09 | Buskuehl Martin | Fotovoltaik-modul mit wenigstens einer solarzelle |
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US7144627B2 (en) * | 1997-03-12 | 2006-12-05 | William Marsh Rice University | Multi-layer nanoshells comprising a metallic or conducting shell |
US7767260B2 (en) * | 2003-01-22 | 2010-08-03 | The Board Of Trustees Of The University Of Arkansas | Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
US8791359B2 (en) * | 2006-01-28 | 2014-07-29 | Banpil Photonics, Inc. | High efficiency photovoltaic cells |
WO2008028130A1 (en) * | 2006-09-01 | 2008-03-06 | William Marsh Rice University | Compositions for surface enhanced infrared absorption spectra and methods of using same |
KR100841186B1 (ko) * | 2007-03-26 | 2008-06-24 | 삼성전자주식회사 | 다층 쉘 구조의 나노결정 및 그의 제조방법 |
AU2009226128A1 (en) * | 2008-03-18 | 2009-09-24 | Solexant Corp. | Improved back contact in thin solar cells |
WO2011004446A1 (ja) * | 2009-07-06 | 2011-01-13 | トヨタ自動車株式会社 | 光電変換素子 |
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WO2009043340A2 (de) | 2007-10-01 | 2009-04-09 | Buskuehl Martin | Fotovoltaik-modul mit wenigstens einer solarzelle |
Cited By (3)
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WO2016017763A1 (ja) * | 2014-07-30 | 2016-02-04 | 京セラ株式会社 | 量子ドット太陽電池 |
JPWO2016017763A1 (ja) * | 2014-07-30 | 2017-04-27 | 京セラ株式会社 | 量子ドット太陽電池 |
US20160293872A1 (en) * | 2015-04-03 | 2016-10-06 | Korea Institute Of Science And Technology | Inorganic nanomaterial-based hydrophobic charge carriers, method for preparing the charge carriers and organic-inorganic hybrid perovskite solar cell including the charge carriers |
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MX2014000261A (es) | 2014-09-01 |
BR112013032971A2 (pt) | 2017-01-31 |
CN103907200A (zh) | 2014-07-02 |
WO2013001373A3 (de) | 2013-08-22 |
US20140224308A1 (en) | 2014-08-14 |
DE202011103301U1 (de) | 2011-10-20 |
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