WO2012177954A2 - Actionneurs bimétalliques - Google Patents

Actionneurs bimétalliques Download PDF

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Publication number
WO2012177954A2
WO2012177954A2 PCT/US2012/043654 US2012043654W WO2012177954A2 WO 2012177954 A2 WO2012177954 A2 WO 2012177954A2 US 2012043654 W US2012043654 W US 2012043654W WO 2012177954 A2 WO2012177954 A2 WO 2012177954A2
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WO
WIPO (PCT)
Prior art keywords
actuator
approximately
metallic
layer
substrate
Prior art date
Application number
PCT/US2012/043654
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English (en)
Other versions
WO2012177954A3 (fr
Inventor
Arturo A. Ayon
Justin FICKLEN
Conglin CHEN
Original Assignee
Board Of Regents Of The University Of Texas System
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Application filed by Board Of Regents Of The University Of Texas System filed Critical Board Of Regents Of The University Of Texas System
Publication of WO2012177954A2 publication Critical patent/WO2012177954A2/fr
Publication of WO2012177954A3 publication Critical patent/WO2012177954A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N10/00—Electric motors using thermal effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo

Definitions

  • MEMS microelectromechanical systems
  • MEMS actuators are known in the art. As shown in FIG. 1, in the conventional approach, a MEMS actuator 110 is mounted on a transmission line 130, with an underlying substrate 120. Conventional MEMS actuators may tolerate high transmitted RF power and have large capacitance ratios, but will also require high operating voltages. Conversely, MEMS actuators may be fabricated with lower capacitance ratios and work at lower operating voltages, but will be able to tolerate only low transmission power.
  • a method of fabricating thermal bimorph actuators using high permittivity ferroelectric thin films is disclosed.
  • the device is a thermal cantilever actuator employing barium titanate (BaTi0 3 ) for RF applications.
  • barium titanate BaTi0 3
  • this MEMS structure is designed to handle high RF transmitted power while maintaining a high capacitance ratio due to the high permittivity of the ferroelectric thin film employed and without the stiction problems normally associated with other MEMS actuators.
  • FIG. 1 is a side view of a prior art electromechanical actuator.
  • FIG. 2 is a side view of a bimorph actuator.
  • FIG. 3 is a sequence of matching top and side views of a bimorph actuator in various stages of fabrication, showing the microfabrication method.
  • FIG. 4 is a top view of a wafer showing measurement points for verifying silicon nitride uniformity.
  • FIG. 5 is a scanning electron microscope image of a coplanar waveguide (CPW) after metal liftoff, used for verification of a bimorph actuator.
  • CPW coplanar waveguide
  • FIG. 6 is a side view of an exemplary BTO beam.
  • FIG. 7 is a sequence showing a characteristic method of patterning BTO.
  • FIG. 8 is a diagram of a BTO beam disclosing the longest underetch.
  • FIG. 9 is a diagram of a sequence for Si0 2 masking for releasing a device without ferroelectric.
  • FIG. 10 is a diagram of a sequence for Si0 2 masking for releasing a device with ferroelectric.
  • MEMS technologists have focused on producing faster, smaller and cheaper microfabricated structures that can offer additional or enhanced capabilities per unit volume.
  • MEMS electrostatic actuators employed for RF applications are generally considered ill-suited for handling transmitted RF power in the 5 - 10W range.
  • this demands additional circuitry to segregate the MEMS structures from the power handling circuitry.
  • the demonstration of MEMS devices able to tolerate such power levels would permit an additional stage of miniaturization for existing communication equipment or the introduction of additional electronic features within the same unit volume.
  • MEMS alternatives have been part of the solutions to pressing communication needs, mostly because MEMS actuators, switches and varactors are frequently described as having a better performance compared to their solid-state counterparts including low- losses in the 8 to 120 GHz range. Furthermore, their linearity, and low parasitics are anticipated to enable smaller and lighter devices making them attractive for commercial, space and military communication systems. Due to the aforementioned reasons, they have been studied in monolithically integrated phase-shifters as well as in cas- cadable designs utilizing the MEMS actuators for switching schemes and as variable capacitors. However, state of the art microwave switches for RF applications employing MEMS technology are ill-suited for handling power levels of the order of 5 - 10 Watts.
  • a bi-metallic or "bimorph” actuator is disclosed that is able to produce a prescribed capacitance ratio and to tolerate 5 - 10 Watts of transmitted RF-power.
  • the bimorph actuator 200 includes a substrate 240 and a coplanar waveguide 230 (CPW) mounted thereon.
  • a cantilever 210 is mounted above the CPW 230 and is mechanically biased away from the CPW 230. In the presence of an operative electrical signal, cantilever 210 operably moves toward CPW 230. Bump 250 is provided to limit the mechanical excursion of cantilever downward. Ferroelectric membranes with an anticipated high dielectric constant and low-insertion loss are not required to be in intimate contact with the underlying substrate, precluding failure by stiction.
  • cantilever 210 deflects only in the presence of an operative electrical signal.
  • the disclosed bimorph actuator 200 does not place additional real estate requirements compared to prior art electrostatic RF MEMS designs.
  • FIG. 3 The microfabrication approach is illustrated in FIG. 3. The process begins with the deposition of a thin insulating layer of silicon nitride (310), followed by the deposition and patterning of the coplanar waveguide (320) employing gold. Subsequently a sacrificial PECVD polysilicon layer is deposited and patterned (330) . The wafer is then coated with a second layer of silicon nitride which upon pattern transfer defines the maximum capacitance the actuator can produce (340) .
  • a thin insulating layer of silicon nitride 310
  • the coplanar waveguide 320
  • a sacrificial PECVD polysilicon layer is deposited and patterned (330) .
  • the wafer is then coated with a second layer of silicon nitride which upon pattern transfer defines the maximum capacitance the actuator can produce (340) .
  • a thin dielectric film is deposited and patterned employing an Argon plasma that constitutes the first layer for the bimorph actuator (350) ; this is followed by the deposition, doping and patterning of a polysilicon layer (360) that constitutes the second layer of the bimorph actuator.
  • the ferroelectric film is subsequently deposited (370) and an isotropic plasma etch (380) is employed to release the structure shown in 390.
  • the completed bimorph actuator is shown in 394.
  • the first step in fabricating the RF MEMS cantilever is to obtain a silicon substrate.
  • the substrate can be doped p-type (for instance B) , or n-type (for instance P) since the circuitry will be electrically isolated from the substrate.
  • An exemplary device was fabricated using 3-inch and 4-inch p- type single crystal silicon substrates. The silicon crystal orientation was not a primary consideration because no bulk micromachining techniques were used during this process. Nevertheless, wafers were used in this exercise.
  • the wafers Before processing, the wafers must first be cleaned using an exothermic piranha bath which is a mixture of sulfuric acid (H 2 S0 4 ) and hydrogen peroxide (H 2 0 2 ) with a ratio [2:1] . This ensures that all organic materials and metals are removed from the substrate surface.
  • an exothermic piranha bath which is a mixture of sulfuric acid (H 2 S0 4 ) and hydrogen peroxide (H 2 0 2 ) with a ratio [2:1] . This ensures that all organic materials and metals are removed from the substrate surface.
  • a relatively thick dielectric film is deposited on the substrate to electrically isolate the silicon wafer from the rest of the device/circuit (e.g. CPW) .
  • the silicon wafer e.g. CPW
  • Si 3 N 4 was chosen as the dielectric and 500 ⁇ as the targeted thickness (although other dielectrics can be used such as silicon dioxide; alternatively, the device can be built on a dielectric wafer) .
  • Si 3 N 4 is deposited at moderately high temperatures ( ⁇ 800°C) and low pressure (250 mtorr), using dichlorosilane (SiCl 2 H 2 ) and ammonia (NH 3 ) . Before processing samples, the film had to be characterized. After deposition the substrate is measured using a nine-point method, for example using the nine points specified on FIG. 4. The average thickness is given by Equation (3) and the uniformity by Equation (4) . In an exemplary embodiment, the desired average thickness of 5003A and a nonuniformity of 3.5% were demonstrated.
  • the film thickness was measured using an ellipsometer as well as an interferometer.
  • the thickness may be verified by taking measurements, for example at positions 1 - 9 specified on FIG. 4.
  • the measured thicknesses of the exemplary embodiment are shown in Table 1 and 2.
  • RIE reactive-ion etching
  • the coplanar waveguide is the actual transmission line which will be carrying the RF signal. It may be fabricated using gold, which has excellent conductivity and resistance to oxide formation. Because gold also has poor adhesion to Si 3 N 4 , a thin layer ( ⁇ 30nm) of titanium was deposited before the gold deposition as an adhesion enhancer (chromium can also be used as an adhesion layer) .
  • Lift-off requires the use of the AZ 5214 image-reversal photolithography approach.
  • the coplanar waveguides were successfully fabricated.
  • the sacrificial layer is silicon. This layer forms a foundation on which to build the structure,
  • bump 250 Two of the seven masks in the process are dedicated to fabricating a bump 250 that will protect the cantilever from making direct contact with the CPW due to the electrostatic attraction from the high power signal. This is accomplished by etching bump 250 s into the first layer of sacrificial silicon and then encapsulating it with a non-sacrificial material such as Si0 2 or Si 3 N 4 .
  • an anisotropic etch is preferred since the size of the bump 250 is 8 ⁇ wide and the film is ⁇ thick. If an isotropic etch is used, the bump 250 may be only approximately 6 ⁇ wide. A dry plasma etcher in the laboratory with a chlorine (Cl 2 ) and Ar chemistry may be employed for this step.
  • the bump 250 Once the bump 250 is patterned, it must be protected from the etchants that will remove the silicon sacrificial layer. This can be done by deposition and patterning of a conformal dielectric over the newly fabricated bump 250.
  • the deposition rate of Si0 2 must be characterized to obtain a suggestion of how long the deposition should be to acquire the desired film thickness.
  • Table 4 show all of the parameters of the Si0 2 deposition conditions used in this step. In an exemplary embodiment, silicon samples were placed in the reactor and the measured thickness was 1422A which corresponds with a deposition rate of 142A/min. The desired film thickness is approximately 300 ⁇ and a film thickness of 3167A was measured.
  • the Si0 2 needs to be etched to encapsulate the polysilicon bump 250.
  • the masking material will be the AZ 5209 photoresist employing a clear field mask.
  • the etch rates of the Si0 2 and the photoresist have to be characterized. For this characterization in an exemplary embodiment, two samples containing Si02 and two coated with AZ 5209 photoresist were etched for 10 minutes in a Si02 etch recipe containing trifluoromethane (CHF 3 )/Ar plasma (see Table 5) . The resultant average etch rate for Si0 2 and photo-resist were 170 A/ min and 55A/min respectively.
  • CHF 3 trifluoromethane
  • ⁇ of photoresist is needed.
  • the photoresist thickness is ⁇ thick which was considered appropriate.
  • the etching rate of silicon information that will be needed in the final step of fabrication.
  • the first layer of the thermal bimorph is aluminum oxide or Alumina (A1 2 0 3 ) .
  • Alumina was chosen due to its high coefficient of thermal expansion ( « 5 - 8) .
  • A1 2 0 3 is not easily patterned using any traditional wet or dry etching chemistry since it is mostly chemically inert, but it is possible to employ a lift-off process by maintaining a film thickness under 200 ⁇ .
  • the film may vary even when the deposition parameters are kept constant.
  • the first deposition resulted in a film with a compressive stress of 43 MPa and the second deposition resulted in a tensile stress of 42 MPa. While the stress is important at room temperature (20°C), it is even more important at higher temperatures since a thermal bimorph will be used as the source of actuation.
  • sample 2 was measured to 250°C and measurements were also taken during the cooling down stage. In that case, the stress initially increases from 42 MPa to 350 MPa which is a change in stress of 308 MPa. When the substrate cools down the stress continues to increase form 350 MPa to approximately 400 MPa.
  • bimorph actuator When fabricating a bimorph actuator there must be two materials with different thermal expansion coefficients to achieve mechanical movement. In the exemplary embodiment, A1 2 0 3 and silicon were used. Their respective coefficients of their expansion differ by a factor of three. Since this bimorph actuation relies on Joules heating due to an electrical current, one of the materials used in the bimorph must be conductive. Therefore, the polysilicon must be doped using ion implantation to bring its conductivity to the rage of interest.
  • Equation (5) shows resistance, where Rs is the sheet resistance, I is the length, and w is the width. Those measurements, along with the dimensions of the 9 devices, were used to derive Equation (6) .
  • n is the device number, ranging from 1 to 9, and R s is the sheet resistance. In the exemplary embodiment, a resistance of 28 ⁇ /D was used. Calculated versus measured resistance values are shown in Table 2.2.10. R— R s —
  • a high permittivity dielectric such as barium titanate (BaTi0 3 ) , barium zirconate titanate (Ba(Zr, Ti)0 3 ), or lead strontium titanate ((Pb, Sr)Ti0 3 ) has to be deposited and patterned.
  • the pulsed-laser-deposition (PLD) method may be used.
  • the thickness is measured.
  • the first measurement was performed using a surface profiler.
  • the PLD machine requires the sample to be clamped down inside of the chamber. Since the BaTi0 3 (BTO) film does not deposit on the area of the substrate under the clamp, the profile of that area can provide the thickness of that film.
  • the film thickness may then be measured using the spectroscopic ellipsometer.
  • the film model was formulated initially using a Cauchy random variable model fitting all of the optical parameters.
  • an interferometer thickness measurement can be made if the index of refraction is known. Using the index of refraction obtained using the ellipsometer, the thickness of the film can now be measured relatively accurately.
  • the first four films provided were deposited at 400°C for deposition times varying from 5 minutes to 45 minutes.
  • the resulting thicknesses and deposition rates can be seen in Table 2.2.11..
  • the resultant index of refraction was between 1.7 and 1.9, depending on wavelength.
  • the films deposited at 400°C were not employed in the exemplary embodiment. Since the desired thickness of the dielectric is between 300 ⁇ and 5000A, the corresponding deposition time is between 15 and 25 minutes. Samples were therefore deposited at 700°C with a desired film thickness of approximately 5000A.
  • Characterization of dry and wet etching of the BaTi0 3 thin films may be carried out using a reactive ion etcher and buffered oxide etch, respectively.
  • CHF 3 is employed in the reactive ion etching.
  • Higher power increases the ion-induced etching, which dramatically increases the etch rate.
  • the gas flow remained a constant 20 sccm/min for both Ar and CF 4 while the power was varied.
  • the value is equal to zero when there is only Ar gas, and equal to one when there is only CF 4 gas.
  • a masking material is needed.
  • the selectivity of the masking material must be high enough that enough will remain when etching is complete.
  • Traditional masks for RIE are photoresist and Si0 2 .
  • a 10-minute Ar etch was performed on six samples, three employing films of AZ 5209 photoresist, and three with films of Si0 2 .
  • the average etch rate was then calculated using recipe 4 from Table 2.2.11.. From these etch rates, their selectivity to BaTi0 3 was determined. Both the average etch rate of these two materials and their selectivity to BaTi0 3 can be seen in Table 2.2.11..
  • Si0 2 A hard mask of Si0 2 will have to be used since 5 to 7 microns of photoresist would have to be used to successfully mask the device since the selectivity of BaTi0 3 to photoresist is 0.082.
  • Silicon dioxide on the other hand, has a BaTi0 3 /Si0 2 selectivity of 1.083 which means that only 4000 A of Si0 2 will be needed to mask the same amount of BaTi0 3 .
  • Masking with Si0 2 requires a total of 8 steps as seen in FIG. 7.
  • the hard masking material is deposited in 720.
  • Si0 2 may be employed and the thickness may be slightly thicker than the BaTi0 3 film to be etched.
  • the Si0 2 mask small pieces of silicon wafer are placed next to the sample so that the approximate thickness can be determined.
  • the oxide process is the same recipe used in Mask #3.
  • the Si0 2 is patterned using the RIE recipe specified for Mask #3.
  • the sample is first spin-coated with photoresist in 730, which is then exposed and developed in 740.
  • the substrate is then placed into the dry etching reactor for a CHF 3 /Ar etch in 750, after which the photoresist is removed using an oxygen plasma in 760.
  • the final step in the fabrication process is the releasing of the device employing SF 6 dry etching.
  • This method of dry etching is used to isotropically etch silicon to release certain structures in MEMS processing. This dry method of releasing the structure eliminates the possibility of stiction destroying the device.
  • an SF 6 gas employing traditional RIE is used. The remaining etches employ the maximum amount of SF 6 , which is seem, to provide the silicon with the most fluorine possible.
  • the power was initially set to 30 W and the pressure was set at a low 10 mTorr. This resulted in relatively poor selectivity of 1.1. By increasing the power 10 W, the selectivity increased to 4. Varying the pressure-distance product can tailor the selectivity. This is done by increasing or decreasing the pressure until an increase in selectivity is observed. In the exemplary embodiment, the pressure was increased to 20 mTorr and the power was set back to the original 30 W resulting in a selectivity of 4.78.
  • the eight inch silicon wafer is covered with polyimide film ( "Kapton” ) tape, which is known in the art.
  • This increases the etch rate of the polysilicon to approximately 2780A/min and the etch rate of Si 3 N 4 on the order of 65A/min.
  • the Si/Si 3 N 4 has selectivity on the order of 44.
  • the preferred SF 6 recipe in the exemplary embodiment is recipe 7 from Table 12
  • the longest under-etch 810 that needs to be performed is 40 ⁇ as shown in FIG. 8, which is 20 ⁇ in each direction. With an isotropic etch rate of 278 ⁇ per minute it will take a total of 2 ⁇ hours to completely release the structure.
  • Table 12 Selectivity of Silicon to Si 3 N 4 in SF 6 Plasma
  • DC probe pads 1032 must be fashioned out of polysilicon, and based on the results, Si0 2 in a suitable thickness is preferred. The area to be masked, as seen in 1030, just covers the DC probe pads.
  • the Si0 2 is again masked using the AZ 5209 photoresist and etched using the Si0 2 etch recipe shown in Table 5. For every 170A of Si0 2 the photoresist will be etched 55 A. Therefore, a photoresist with thickness of ⁇ is capable of etching a Si0 2 film of 3 ⁇ in thickness. Since the masking oxide is slightly thicker than 2 ⁇ , this photoresist thickness suffices.
  • the structure can be released in the SF 6 plasma.
  • This film must be overetched to ensure proper removal of the oxide while not damaging the DC polysilicon probe pads.
  • the etch rate of polysilicon is a mere 4lA/ min. A 5 - 10 minute over-etch would remove between 205A and 41 ⁇ , which would still leave over 200 ⁇ of doped polysilicon behind.
  • relatively low voltages are sufficient to produce deflections capable of withstanding RF transmitted power levels in the 5 - 10W change.
  • the angular deflection was measured for five different voltages.
  • the deflection was measured for voltages of 4, 6, 8, 10, and 12 volts.
  • the predicted values values are compared to measured values in FIG.

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

L'invention concerne un procédé permettant de fabriquer des actionneurs thermiques bimorphes au moyen de films minces ferroélectriques haute permissivité. Le dispositif consiste en un actionneur thermique en porte-à-faux utilisant du titanate de barium (BaTiO3) pour des applications RF. Comparée aux actionneurs électrostatiques, cette structure MEMS est conçue pour gérer une puissance d'émission RF élevée tout en maintenant un rapport de capacité élevé en raison de la permissivité élevée du flim mince ferroélectrique utilisé et sans les problèmes de friction statique généralement associés à d'autres actionneurs MEMS.
PCT/US2012/043654 2011-06-21 2012-06-21 Actionneurs bimétalliques WO2012177954A2 (fr)

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US201161499275P 2011-06-21 2011-06-21
US61/499,275 2011-06-21

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WO2012177954A2 true WO2012177954A2 (fr) 2012-12-27
WO2012177954A3 WO2012177954A3 (fr) 2013-03-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326668A (zh) * 2013-06-19 2013-09-25 东南大学 基于微机械固支梁电容式功率传感器的倍频器及制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181379A1 (en) * 2001-09-21 2006-08-17 Hrl Laboratories, Llc Stress bimorph MEMS switches and methods of making same
US20070024410A1 (en) * 2005-05-13 2007-02-01 Evigia Systems, Inc. Method and system for monitoring environmental conditions
US20070256917A1 (en) * 2003-09-09 2007-11-08 Joachim Oberhammer Film Actuator Based Mems Device and Method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181379A1 (en) * 2001-09-21 2006-08-17 Hrl Laboratories, Llc Stress bimorph MEMS switches and methods of making same
US20070256917A1 (en) * 2003-09-09 2007-11-08 Joachim Oberhammer Film Actuator Based Mems Device and Method
US20070024410A1 (en) * 2005-05-13 2007-02-01 Evigia Systems, Inc. Method and system for monitoring environmental conditions

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.FICKLEN ET AL.: 'HIGH PERMITTIVITY FERROELECTRIC ACTUATORS FOR RADAR APLICA TIONS' DTIP OF MEMS/MOEMS 01 April 2009, pages 416 - 418 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326668A (zh) * 2013-06-19 2013-09-25 东南大学 基于微机械固支梁电容式功率传感器的倍频器及制备方法

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