WO2012171682A3 - Verfahren zur herstellung einer passivierungsschicht auf nasschemischem weg für eine halbleitereinrichtung - Google Patents

Verfahren zur herstellung einer passivierungsschicht auf nasschemischem weg für eine halbleitereinrichtung Download PDF

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Publication number
WO2012171682A3
WO2012171682A3 PCT/EP2012/057104 EP2012057104W WO2012171682A3 WO 2012171682 A3 WO2012171682 A3 WO 2012171682A3 EP 2012057104 W EP2012057104 W EP 2012057104W WO 2012171682 A3 WO2012171682 A3 WO 2012171682A3
Authority
WO
WIPO (PCT)
Prior art keywords
passivation layer
semiconductor device
wet
chemical production
substrate
Prior art date
Application number
PCT/EP2012/057104
Other languages
English (en)
French (fr)
Other versions
WO2012171682A2 (de
Inventor
Tim Boescke
Robert CARL
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2012171682A2 publication Critical patent/WO2012171682A2/de
Publication of WO2012171682A3 publication Critical patent/WO2012171682A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Verfahren zur Herstellung einer Halbleitereinrichtung, insbesondere einer Solarzelle auf Silizium-Basis, mit einem mindestens abschnittsweise p-dotierten Halbleitersubstrat und einer auf dem Substrat angeordneten Passivierungsschicht, wobei die Passivierungsschicht eine ladungsinduzierende Metallionen enthaltende Schicht aufweist, welche auf nasschemischem Weg erzeugt wird.
PCT/EP2012/057104 2011-06-15 2012-04-19 Verfahren zur herstellung einer halbleitereinrichtung WO2012171682A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011077526.9 2011-06-15
DE102011077526A DE102011077526A1 (de) 2011-06-15 2011-06-15 Verfahren zur Herstellung einer Halbleitereinrichtung

Publications (2)

Publication Number Publication Date
WO2012171682A2 WO2012171682A2 (de) 2012-12-20
WO2012171682A3 true WO2012171682A3 (de) 2013-11-21

Family

ID=45976402

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/057104 WO2012171682A2 (de) 2011-06-15 2012-04-19 Verfahren zur herstellung einer halbleitereinrichtung

Country Status (2)

Country Link
DE (1) DE102011077526A1 (de)
WO (1) WO2012171682A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319308B (zh) * 2014-09-16 2017-02-08 上饶光电高科技有限公司 一种提高晶体硅太阳能电池扩散均匀性的方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463216A (en) * 1982-01-28 1984-07-31 Tokyo Shibaura Denki Kabushiki Kaisha Solar cell
EP1489667A2 (de) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung
WO2006018013A1 (de) * 2004-08-18 2006-02-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle
US20100032012A1 (en) * 2006-12-01 2010-02-11 Takayuki Isaka Solar cell and method of manufacturing the same
WO2010039882A1 (en) * 2008-09-30 2010-04-08 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
DE102009025977A1 (de) * 2009-06-16 2010-12-23 Q-Cells Se Solarzelle und Herstellungsverfahren einer Solarzelle
KR20110062858A (ko) * 2009-12-04 2011-06-10 주식회사 디엠에스 인라인 방식의 태양전지 제조용 씨비디(ｃｂｄ) 장치
WO2011159675A1 (en) * 2010-06-14 2011-12-22 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State Process to form aqueous precursor and aluminum oxide film
WO2012119684A2 (de) * 2011-03-08 2012-09-13 Merck Patent Gmbh Aluminiumoxid basierte metallisierungsbarriere

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463216A (en) * 1982-01-28 1984-07-31 Tokyo Shibaura Denki Kabushiki Kaisha Solar cell
EP1489667A2 (de) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung
WO2006018013A1 (de) * 2004-08-18 2006-02-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle
US20100032012A1 (en) * 2006-12-01 2010-02-11 Takayuki Isaka Solar cell and method of manufacturing the same
WO2010039882A1 (en) * 2008-09-30 2010-04-08 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
DE102009025977A1 (de) * 2009-06-16 2010-12-23 Q-Cells Se Solarzelle und Herstellungsverfahren einer Solarzelle
KR20110062858A (ko) * 2009-12-04 2011-06-10 주식회사 디엠에스 인라인 방식의 태양전지 제조용 씨비디(ｃｂｄ) 장치
WO2011159675A1 (en) * 2010-06-14 2011-12-22 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State Process to form aqueous precursor and aluminum oxide film
WO2012119684A2 (de) * 2011-03-08 2012-09-13 Merck Patent Gmbh Aluminiumoxid basierte metallisierungsbarriere

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SARBANI BASU ET AL: "Liquid-Phase Deposition of Al[sub 2]O[sub 3] Thin Films on GaN", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 154, no. 12, 22 October 2007 (2007-10-22), pages H1041 - H1046, XP055064768, ISSN: 0013-4651, DOI: 10.1149/1.2793700 *

Also Published As

Publication number Publication date
WO2012171682A2 (de) 2012-12-20
DE102011077526A1 (de) 2012-12-20

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