WO2012171682A3 - Verfahren zur herstellung einer passivierungsschicht auf nasschemischem weg für eine halbleitereinrichtung - Google Patents
Verfahren zur herstellung einer passivierungsschicht auf nasschemischem weg für eine halbleitereinrichtung Download PDFInfo
- Publication number
- WO2012171682A3 WO2012171682A3 PCT/EP2012/057104 EP2012057104W WO2012171682A3 WO 2012171682 A3 WO2012171682 A3 WO 2012171682A3 EP 2012057104 W EP2012057104 W EP 2012057104W WO 2012171682 A3 WO2012171682 A3 WO 2012171682A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- passivation layer
- semiconductor device
- wet
- chemical production
- substrate
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000012824 chemical production Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000007704 wet chemistry method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Verfahren zur Herstellung einer Halbleitereinrichtung, insbesondere einer Solarzelle auf Silizium-Basis, mit einem mindestens abschnittsweise p-dotierten Halbleitersubstrat und einer auf dem Substrat angeordneten Passivierungsschicht, wobei die Passivierungsschicht eine ladungsinduzierende Metallionen enthaltende Schicht aufweist, welche auf nasschemischem Weg erzeugt wird.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011077526.9 | 2011-06-15 | ||
DE102011077526A DE102011077526A1 (de) | 2011-06-15 | 2011-06-15 | Verfahren zur Herstellung einer Halbleitereinrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012171682A2 WO2012171682A2 (de) | 2012-12-20 |
WO2012171682A3 true WO2012171682A3 (de) | 2013-11-21 |
Family
ID=45976402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2012/057104 WO2012171682A2 (de) | 2011-06-15 | 2012-04-19 | Verfahren zur herstellung einer halbleitereinrichtung |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102011077526A1 (de) |
WO (1) | WO2012171682A2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104319308B (zh) * | 2014-09-16 | 2017-02-08 | 上饶光电高科技有限公司 | 一种提高晶体硅太阳能电池扩散均匀性的方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463216A (en) * | 1982-01-28 | 1984-07-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Solar cell |
EP1489667A2 (de) * | 2003-06-20 | 2004-12-22 | Interuniversitair Microelektronica Centrum Vzw | Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung |
WO2006018013A1 (de) * | 2004-08-18 | 2006-02-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle |
US20100032012A1 (en) * | 2006-12-01 | 2010-02-11 | Takayuki Isaka | Solar cell and method of manufacturing the same |
WO2010039882A1 (en) * | 2008-09-30 | 2010-04-08 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
DE102009025977A1 (de) * | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
KR20110062858A (ko) * | 2009-12-04 | 2011-06-10 | 주식회사 디엠에스 | 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 |
WO2011159675A1 (en) * | 2010-06-14 | 2011-12-22 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State | Process to form aqueous precursor and aluminum oxide film |
WO2012119684A2 (de) * | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxid basierte metallisierungsbarriere |
-
2011
- 2011-06-15 DE DE102011077526A patent/DE102011077526A1/de not_active Withdrawn
-
2012
- 2012-04-19 WO PCT/EP2012/057104 patent/WO2012171682A2/de active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463216A (en) * | 1982-01-28 | 1984-07-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Solar cell |
EP1489667A2 (de) * | 2003-06-20 | 2004-12-22 | Interuniversitair Microelektronica Centrum Vzw | Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung |
WO2006018013A1 (de) * | 2004-08-18 | 2006-02-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle |
US20100032012A1 (en) * | 2006-12-01 | 2010-02-11 | Takayuki Isaka | Solar cell and method of manufacturing the same |
WO2010039882A1 (en) * | 2008-09-30 | 2010-04-08 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
DE102009025977A1 (de) * | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
KR20110062858A (ko) * | 2009-12-04 | 2011-06-10 | 주식회사 디엠에스 | 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 |
WO2011159675A1 (en) * | 2010-06-14 | 2011-12-22 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State | Process to form aqueous precursor and aluminum oxide film |
WO2012119684A2 (de) * | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxid basierte metallisierungsbarriere |
Non-Patent Citations (1)
Title |
---|
SARBANI BASU ET AL: "Liquid-Phase Deposition of Al[sub 2]O[sub 3] Thin Films on GaN", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 154, no. 12, 22 October 2007 (2007-10-22), pages H1041 - H1046, XP055064768, ISSN: 0013-4651, DOI: 10.1149/1.2793700 * |
Also Published As
Publication number | Publication date |
---|---|
WO2012171682A2 (de) | 2012-12-20 |
DE102011077526A1 (de) | 2012-12-20 |
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