WO2012171294A1 - Artificial microstructure and artificial electromagnetic material using same - Google Patents

Artificial microstructure and artificial electromagnetic material using same Download PDF

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Publication number
WO2012171294A1
WO2012171294A1 PCT/CN2011/081362 CN2011081362W WO2012171294A1 WO 2012171294 A1 WO2012171294 A1 WO 2012171294A1 CN 2011081362 W CN2011081362 W CN 2011081362W WO 2012171294 A1 WO2012171294 A1 WO 2012171294A1
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Prior art keywords
resonant ring
artificial
open resonant
open
ring
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PCT/CN2011/081362
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French (fr)
Chinese (zh)
Inventor
刘若鹏
栾琳
寇超锋
蒋楠楠
Original Assignee
深圳光启高等理工研究院
深圳光启创新技术有限公司
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Publication of WO2012171294A1 publication Critical patent/WO2012171294A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials

Definitions

  • This invention relates to a material, and more particularly to an artificial microstructure and an artificial electromagnetic material for its use. Background technique
  • Artificial electromagnetic materials are a new type of synthetic material consisting of a substrate made of a non-metallic material and a plurality of artificial microstructures attached to or embedded in the surface of the substrate.
  • the substrate can be virtually divided into a plurality of square substrate units arranged in a rectangular array, and each of the substrate units is attached with an artificial microstructure to form a metamaterial unit, and the entire metamaterial is hundreds of thousands, millions or even hundreds of millions.
  • Such a metamaterial unit is composed of crystals that are composed of a myriad of lattices in a certain arrangement.
  • the artificial microstructures on each metamaterial unit are the same or not identical.
  • the artificial microstructure is a cylindrical or flat wire constituting a certain geometric figure, for example, a wire forming a circular shape, a "work" shape, or the like.
  • each metamaterial unit Due to the existence of artificial microstructures, each metamaterial unit has an equivalent dielectric constant and equivalent magnetic permeability different from the substrate itself, so all metamaterials composed of metamaterial units exhibit special response characteristics to electric and magnetic fields. At the same time, the specific structure and shape of the artificial microstructure can be changed, and the equivalent dielectric constant and equivalent magnetic permeability of the unit can be changed, thereby changing the response characteristics of the entire metamaterial.
  • Natural materials except for a few materials such as ferrite, have very high magnetic permeability. Most materials have a magnetic permeability equal to 1 or 1 ⁇ 0.001, but almost no negative magnetic permeability or magnetic permeability is around 0. s material. However, in some electromagnetic applications, materials with low magnetic permeability, ie materials with a magnetic permeability in the range of 0 to 0.8, are necessary. Summary of the invention
  • the technical problem to be solved by the present invention is to provide an artificial microstructure having a low magnetic permeability and an artificial electromagnetic material to which it is applied in view of the above-mentioned drawbacks of the prior art.
  • the present invention provides an artificial microstructure comprising two first open and parallel resonant ring and a second open resonant ring, the second open resonant ring being smaller than the first open resonant ring .
  • the second open resonant ring is located inside the annular orthographic projection of the first open resonant ring.
  • the second open resonant ring is located in the middle of the annular orthographic projection of the first open resonant ring.
  • the first open resonant ring is a near "concave” shaped open resonant ring, and the second open resonant ring is a near "mouth” shaped open resonant ring.
  • the first open resonant ring is a derivative structure of a near "concave” shaped open resonant ring
  • the second open resonant ring is a derivative structure of a near "mouth” shaped open resonant ring.
  • the second open resonant ring includes a gem-shaped wire and two non-contiguous horizontal lines extending horizontally from the ends of the g-shaped wire, respectively, the first open resonant ring including a ""-shaped wire and Two non-contiguous horizontal lines extending horizontally from the ends of the glyph wire respectively, the first open resonant ring further comprising a vertical extending from the ends of the two horizontal lines toward the ring and the bottom of the wire shaped wire There are two parallel vertical lines with gaps.
  • the second open resonant ring is oriented the same as the opening of the first open resonant ring.
  • Both ends of the opening of the first open resonant ring extend toward the inside of the ring and do not intersect.
  • Both ends of the opening of the second open resonant ring extend toward the inside of the ring and do not intersect.
  • the artificial microstructure is made of wire.
  • the artificial microstructure is made of copper wire.
  • the artificial microstructure is made of silver wire.
  • the artificial microstructure is surrounded by a single wire.
  • an embodiment of the present invention further provides an artificial electromagnetic material, comprising at least one material sheet layer, each material sheet layer comprising a sheet substrate and a plurality of the above-mentioned artificial microstructures, the first opening of the artificial microstructure
  • the resonant ring and the second open resonant ring are respectively attached to the front surface of the substrate and the back surface of the substrate.
  • the first open resonant ring is arranged such that the row pitch and the column pitch of the array are equal to the row pitch and the column pitch of the second open resonant ring arranged in an array.
  • the line spacing and column spacing are less than or equal to one tenth of the wavelength of the incident electromagnetic wave responsive to the artificial electromagnetic material.
  • the substrate is made of ceramic.
  • the substrate is made of polytetrafluoroethylene or epoxy.
  • the artificial electromagnetic material includes a plurality of layers of material that are superimposed.
  • the plurality of material sheets are stacked by any one of welding, riveting or bonding.
  • the artificial electromagnetic material embodying the artificial microstructure of the present invention and the application thereof has the following beneficial effects:
  • the present invention realizes a double resonance peak or even a multi-resonance peak by the response of two open resonant rings, thereby realizing magnetic permeability in a certain frequency range. It is possible to achieve a smooth and slow change from zero, that is, a material having a low magnetic permeability in a certain frequency band.
  • FIG. 1 is a front structural view of an artificial electromagnetic material according to a preferred embodiment of the present invention.
  • Figure 2 is a rear structural view of the artificial electromagnetic material shown in Figure 1;
  • FIG. 3 is a schematic structural view of one of the material units of the artificial electromagnetic material shown in FIG. 1;
  • FIG. 4 is a simulation effect diagram obtained by simulating the material unit shown in FIG.
  • Figure 5 is a simulation effect diagram of another material unit. detailed description
  • the present invention relates to a low magnetic permeability artificial electromagnetic material comprising at least one sheet of material which, when having a plurality of layers of material, are stacked together in a direction perpendicular to their surface and passed through a certain package
  • the process is for example:): it is made into a unitary component by means of early joining, riveting, bonding, and the like.
  • each of the material sheets includes a sheet substrate 1 and an artificial microstructure attached to the substrate 1.
  • the substrate 1 is usually made of epoxy resin, polytetrafluoroethylene, ceramics, etc.
  • the artificial microstructure 2 is a planar structure having a certain geometric pattern composed of metal wires such as silver wires or copper wires.
  • Each substrate 1 can be virtually divided into a plurality of rectangular parallelepiped meshes 10 of equal length and width, each mesh 10 having a thickness equal to the thickness of the substrate 1, and the length and width are not greater than ten wavelengths of incident electromagnetic waves to be responsive. One of the points.
  • Each of the square-shaped grids 10 is a substrate unit, and each of the substrate units and the artificial microstructures 2 attached to the surface thereof constitute a material unit 11, and each of the material sheets can be regarded as These material units 11 are arrayed by the width of one material unit 11 as a line pitch and the length as a column pitch.
  • the artificial microstructure 2 includes two first open resonant rings 2a and a second open resonant ring 2b disposed in parallel and parallel, and the second open resonant ring 2b is smaller than the first open 2 resonant ring.
  • the first open resonant ring 2a and the second open resonant ring 2b are arranged in an array on the front and back sides of the substrate 1 at the same row pitch and column pitch.
  • the line spacing of the first open resonant ring 2a is two first open resonant rings 2a of the adjacent two rows of the first open resonant ring 2a (the second open resonant ring 2b) on the same column ( The distance between the center points of the second open resonant ring 2b) is similarly available.
  • the first and second open resonant rings 2a, 2b are opposed to each other, that is, they are respectively located within the front and back surfaces of the same substrate unit. Further, the first and second open resonant rings 2a, 2b are two open resonant rings of different sizes.
  • the second open resonance ring 2b is open to the same direction as the opening of the first open resonance ring 2a.
  • the open resonant ring is an approximately annular structure surrounded by a single wire and having a certain distance between the starting end and the end to form an opening, which can achieve a resonance effect.
  • the open resonant ring of the first open resonant ring 2a and the second open resonant ring 2b of the present invention are different in size, and therefore the resonance effects of the two are different, and the material unit 11 obtained by the combination can realize the negative magnetic permeability. effect.
  • the second open resonant ring 2b is a near-port-shaped open-end resonant ring, including a g-shaped wire and two non-phases extending horizontally from the ends of the g-shaped wire respectively. Connected horizontal lines.
  • the first open resonant ring 2a is a near-concave-shaped open resonant ring, which includes, in addition to the glyph wire and two horizontal lines of the near-mouth-shaped open resonant ring, Two parallel vertical lines extending from the ends of the two transverse lines vertically into the ring and having a gap with the bottom of the glyph wire.
  • first and second open resonant rings 2a, 2b may be interchanged, that is, the first open resonant ring 2a is a near "mouth” shaped open resonant ring, and the second open resonant ring 2b is a near "concave” open resonant ring.
  • first and second open resonant rings 2a, 2b of the present invention are not limited to the above-mentioned near-concave-shaped, near-mouth-shaped open-end resonant ring, and may also be a derivative structure of the above-mentioned open resonant ring, for example, near concave
  • the derivative structure of the glyph-shaped resonant ring is a structure composed of the open resonant ring and a metal wire extending from the end of the two vertical lines to the inside of the ring and not intersecting, and the derivation structure of the near-mouth-shaped open resonant ring
  • the second open resonant ring 2b of the near "mouth” shape is smaller than the near "concave” shape
  • the first open resonant ring 2a is located inside the vertical projection of the first open resonant ring 2a perpendicular to the front surface of the substrate, that is, the second open resonant ring 2b is located inside the annular orthographic projection of the first open resonant ring 2a .
  • the second open resonant ring 2b is located in the middle of the vertical annular projection of the first open resonant ring 2a, i.e., the center points of the two coincide.
  • the invention utilizes the above two large and small open resonant rings, obtains two resonance peaks through two open resonant rings, changes the distance between the two resonant rings and adjusts the size of the two, and can control two resonances.
  • the resonant strength and the resonant frequency of the peak, and thus the resonant peak obtained by one resonant ring and the resonant peak generated by the other resonant ring, can obtain a smooth continuous magnetic permeability from zero, that is, a material with low magnetic permeability. .
  • the artificial microstructure has a wire width of 0.1 mm and a wire thickness of 0.018 mm; wherein the first open resonant ring 2a has a size HI X W1 of 2.2 mm x 2.2 mm, and the sides are away from the side of the material unit 11
  • the wall distance dl is 0.15 mm, the distance from the bottom to the lower bottom surface of the material unit 11 is 0.15 mm, and the distance a between the two vertical lines is 0.5 mm;
  • the size of the second open resonance ring 2b is H2 ⁇ W2 is 1.5 mm x 1.5mm, the distance d2 between the two sides of the first open resonant ring 2a is 0.25mm, the bottom distance from the bottom to the first open resonant ring 2a is 0.25mm, and the
  • Fig. 4 is the real part of the simulated magnetic permeability spectrum diagram, f.
  • the magnetic permeability of the frequency band is the required magnetic permeability starting from zero and continuously changing smoothly to 1, f 0 is in the range of about 55 to 78 GHz, and the bandwidth is 25 GHz.
  • the f 0 frequency band can be moved forward or backward by adjusting the size of the first or second open resonant ring 2a, 3b.
  • the substrate material is made of polytetrafluoroethylene
  • the artificial microstructure is made of copper wire
  • the material unit 11 after the size change has a simulation result as shown in FIG. 5.
  • the frequency band f whose magnetic permeability starts from zero and changes slowly. It is 58 ⁇ 63GHz and the bandwidth is 5GHz. From this, it can be seen that reducing the size of the second open resonance ring 2b can narrow the bandwidth of the low magnetic permeability band.
  • the first resonant peak shifts back and the second resonant peak advances.
  • the sizes of the material unit 11 and the first and second open resonance rings 2a, 3b are also different depending on the frequency of the incident electromagnetic wave to be responded to.
  • the length and width of the material unit 11 are preferably 4 mm
  • the size of the first open resonant ring 2a is 3.5 mm x 3.5 mm
  • the size of the second open resonant ring 2b It is 2mm x 2mm.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Soft Magnetic Materials (AREA)

Abstract

Provided in the present invention is an artificial microstructure, comprising: a first split-ring resonator (SRR) and a second SRR, said SRRs facing each other and being parallely disposed, and the second SRR being smaller than the first SRR. Two resonance peaks or multiple resonance peaks are obtained by means of the response of the large and small SRRs; thus, permeability within a certain frequency range changes slowly and smoothly starting from zero. That is, materials of a certain frequency band possess a low permeability. In addition, further disclosed in the present invention is an artificial electromagnetic material including said artificial microstructure.

Description

一种人造微结构及其应用的人工电磁材料  Artificial microstructure and artificial electromagnetic material thereof
本申请要求于 2011年 6月 17日提交中国专利局、申请号为 201110163730.X, 发明名称为 "低磁导率的人工电磁材料" 的中国专利申请的优先权, 其全部内 容通过引用结合在本申请中。 技术领域  This application claims priority to Chinese Patent Application No. 201110163730.X, filed on Jun. 17, 2011, entitled "Infrared Electromagnetic Material of Low Permeability", the entire contents of which are incorporated by reference. In this application. Technical field
本发明涉及一种材料, 特别是涉及一种人造微结构及其应用的人工电磁材 料。 背景技术  This invention relates to a material, and more particularly to an artificial microstructure and an artificial electromagnetic material for its use. Background technique
人工电磁材料, 俗称超材料( metamaterial ), 是一种新型人工合成材料, 是 由非金属材料制成的基板和附着在基板表面上或嵌入在基板内部的多个人造微 结构构成的。 基板可以虚拟地划分为矩形阵列排布的多个方形基板单元, 每个 基板单元上附着有一个人造微结构从而形成一个超材料单元, 整个超材料即是 由数十万、 百万甚至上亿的这样的超材料单元组成的, 就像晶体是由无数的晶 格按照一定的排布构成的。 每个超材料单元上的人造微结构相同或者不完全相 同。 人造微结构是组成一定几何图形的圆柱形或扁平状金属丝, 例如组成圓环 形、 "工" 形的金属丝等。  Artificial electromagnetic materials, commonly known as metamaterials, are a new type of synthetic material consisting of a substrate made of a non-metallic material and a plurality of artificial microstructures attached to or embedded in the surface of the substrate. The substrate can be virtually divided into a plurality of square substrate units arranged in a rectangular array, and each of the substrate units is attached with an artificial microstructure to form a metamaterial unit, and the entire metamaterial is hundreds of thousands, millions or even hundreds of millions. Such a metamaterial unit is composed of crystals that are composed of a myriad of lattices in a certain arrangement. The artificial microstructures on each metamaterial unit are the same or not identical. The artificial microstructure is a cylindrical or flat wire constituting a certain geometric figure, for example, a wire forming a circular shape, a "work" shape, or the like.
由于人造微结构的存在, 每个超材料单元具有不同于基板本身的等效介电 常数和等效磁导率, 因此所有的超材料单元构成的超材料对电场和磁场呈现出 特殊的响应特性; 同时, 对人造微结构设计不同的具体结构和形状, 可改变其 单元的等效介电常数和等效磁导率, 进而改变整个超材料的响应特性。  Due to the existence of artificial microstructures, each metamaterial unit has an equivalent dielectric constant and equivalent magnetic permeability different from the substrate itself, so all metamaterials composed of metamaterial units exhibit special response characteristics to electric and magnetic fields. At the same time, the specific structure and shape of the artificial microstructure can be changed, and the equivalent dielectric constant and equivalent magnetic permeability of the unit can be changed, thereby changing the response characteristics of the entire metamaterial.
自然界的材料, 除了铁氧体等少数几种材料的磁导率非常高之外, 大部分 材料的磁导率等于 1或者 1 ± 0.001 , 但是几乎没有负磁导率或者磁导率在 0左 右的材料。 但在一些电磁应用场合, 低磁导率的材料即磁导率在 0至 0.8范围内 的材料是非常必要的。 发明内容  Natural materials, except for a few materials such as ferrite, have very high magnetic permeability. Most materials have a magnetic permeability equal to 1 or 1 ± 0.001, but almost no negative magnetic permeability or magnetic permeability is around 0. s material. However, in some electromagnetic applications, materials with low magnetic permeability, ie materials with a magnetic permeability in the range of 0 to 0.8, are necessary. Summary of the invention
本发明要解决的技术问题在于, 针对现有技术的上述缺陷, 提供一种低磁 导率的人造微结构及其应用的人工电磁材料。 本发明提供一种人造微结构, 所述人造微结构包括两个正对且平行设置的 第一开口谐振环及第二开口谐振环, 所述第二开口谐振环小于所述第一开口谐 振环。 The technical problem to be solved by the present invention is to provide an artificial microstructure having a low magnetic permeability and an artificial electromagnetic material to which it is applied in view of the above-mentioned drawbacks of the prior art. The present invention provides an artificial microstructure comprising two first open and parallel resonant ring and a second open resonant ring, the second open resonant ring being smaller than the first open resonant ring .
其中, 所述第二开口谐振环位于所述第一开口谐振环的环形正投影内部。 所述第二开口谐振环位于所述第一开口谐振环的环形正投影的正中间。 所述第一开口谐振环为近 "凹" 字形开口谐振环, 所述第二开口谐振环为 近 "口" 字形开口谐振环。  The second open resonant ring is located inside the annular orthographic projection of the first open resonant ring. The second open resonant ring is located in the middle of the annular orthographic projection of the first open resonant ring. The first open resonant ring is a near "concave" shaped open resonant ring, and the second open resonant ring is a near "mouth" shaped open resonant ring.
所述第一开口谐振环为近 "凹" 字形开口谐振环的衍生结构, 所述第二开 口谐振环为近 "口" 字形开口谐振环的衍生结构。  The first open resonant ring is a derivative structure of a near "concave" shaped open resonant ring, and the second open resonant ring is a derivative structure of a near "mouth" shaped open resonant ring.
所述第二开口谐振环包括 字形金属丝和分别自所述 字形金属 丝两端水平向中间延伸的两根不相接的横线, 所述第一开口谐振环包括 " " " 字形金属丝和分别自所述 字形金属丝两端水平向中间延伸的两根不相接 的横线, 所述第一开口谐振环还包括自两根横线末端竖直向环内延伸且与 字形金属丝底部存在间隙的两根相平行的竖线。  The second open resonant ring includes a gem-shaped wire and two non-contiguous horizontal lines extending horizontally from the ends of the g-shaped wire, respectively, the first open resonant ring including a ""-shaped wire and Two non-contiguous horizontal lines extending horizontally from the ends of the glyph wire respectively, the first open resonant ring further comprising a vertical extending from the ends of the two horizontal lines toward the ring and the bottom of the wire shaped wire There are two parallel vertical lines with gaps.
所述第二开口谐振环与所述第一开口谐振环的开口朝向相同。  The second open resonant ring is oriented the same as the opening of the first open resonant ring.
所述第一开口谐振环的开口的两个末端向环内部延伸且不相交。  Both ends of the opening of the first open resonant ring extend toward the inside of the ring and do not intersect.
所述第二开口谐振环的开口的两个末端向环内部延伸且不相交。  Both ends of the opening of the second open resonant ring extend toward the inside of the ring and do not intersect.
所述人造微结构由金属丝制成。  The artificial microstructure is made of wire.
所述人造微结构由铜线制成。  The artificial microstructure is made of copper wire.
所述人造微结构由银线制成。  The artificial microstructure is made of silver wire.
所述人造微结构由单根金属丝围成。  The artificial microstructure is surrounded by a single wire.
相应地, 本发明实施例还提供了一种人工电磁材料, 包括至少一个材料片 层, 每个材料片层包括片状基板和多个上述的人造微结构, 所述人造微结构的 第一开口谐振环及第二开口谐振环分别附着在所述基板的正面及所述基板的背 面。  Correspondingly, an embodiment of the present invention further provides an artificial electromagnetic material, comprising at least one material sheet layer, each material sheet layer comprising a sheet substrate and a plurality of the above-mentioned artificial microstructures, the first opening of the artificial microstructure The resonant ring and the second open resonant ring are respectively attached to the front surface of the substrate and the back surface of the substrate.
其中, 所述第一开口谐振环排列成阵列的行间距及列间距分别与所述第二 开口谐振环排列成阵列的行间距及列间距相等。  The first open resonant ring is arranged such that the row pitch and the column pitch of the array are equal to the row pitch and the column pitch of the second open resonant ring arranged in an array.
所述行间距和列间距小于等于所述人工电磁材料响应的入射电磁波波长的 十分之一。  The line spacing and column spacing are less than or equal to one tenth of the wavelength of the incident electromagnetic wave responsive to the artificial electromagnetic material.
所述基板由陶瓷制成。 所述基板由聚四氟乙烯或环氧树脂制成。 The substrate is made of ceramic. The substrate is made of polytetrafluoroethylene or epoxy.
所述人工电磁材料包括叠加的多块材料片层。  The artificial electromagnetic material includes a plurality of layers of material that are superimposed.
所述多块材料片层采用焊接、 铆接或粘接中任意一种封装工艺堆叠。  The plurality of material sheets are stacked by any one of welding, riveting or bonding.
实施本发明的人造微结构及其应用的人工电磁材料, 具有以下有益效果: 本发明通过大小两个开口谐振环的响应实现双谐振峰甚至多谐振峰, 从而在一 定频率范围内的磁导率能够实现从零开始平滑緩慢变化, 也即在一定频段的材 料具有低磁导率的特性。 附图说明  The artificial electromagnetic material embodying the artificial microstructure of the present invention and the application thereof has the following beneficial effects: The present invention realizes a double resonance peak or even a multi-resonance peak by the response of two open resonant rings, thereby realizing magnetic permeability in a certain frequency range. It is possible to achieve a smooth and slow change from zero, that is, a material having a low magnetic permeability in a certain frequency band. DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案, 下面将对实施 例或现有技术描述中所需要使用的附图作简单地介绍, 显而易见地, 下面描述 中的附图仅仅是本发明的一些实施例, 对于本领域普通技术人员来讲, 在不付 出创造性劳动性的前提下, 还可以根据这些附图获得其他的附图。  In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any inventive labor.
图 1是本发明优选实施例的人工电磁材料的正面结构图;  1 is a front structural view of an artificial electromagnetic material according to a preferred embodiment of the present invention;
图 2是图 1所示人工电磁材料的背面结构图;  Figure 2 is a rear structural view of the artificial electromagnetic material shown in Figure 1;
图 3是图 1所示人工电磁材料的其中一个材料单元的结构示意图; 图 4是对图 3所示材料单元仿真得到的仿真效果图;  3 is a schematic structural view of one of the material units of the artificial electromagnetic material shown in FIG. 1; FIG. 4 is a simulation effect diagram obtained by simulating the material unit shown in FIG.
图 5是另一材料单元的仿真效果图。 具体实施方式  Figure 5 is a simulation effect diagram of another material unit. detailed description
本发明涉及一种低磁导率的人工电磁材料, 其包括至少一个材料片层, 当 具有多个材料片层时, 这些片层沿垂直于其表面的方向堆叠到一起, 并通过一 定的封装工艺例如;):早接、 铆接、 粘接等方式制成为一个整体的元件。  The present invention relates to a low magnetic permeability artificial electromagnetic material comprising at least one sheet of material which, when having a plurality of layers of material, are stacked together in a direction perpendicular to their surface and passed through a certain package The process is for example:): it is made into a unitary component by means of early joining, riveting, bonding, and the like.
请一并参阅图 1-图 3 , 每个材料片层包括片状基板 1 和附着在所述基板 1 上的人造微结构。 其中, 基板 1 通常选用环氧树脂、 聚四氟乙烯、 陶瓷等材料 制成, 人造微结构 2 为银线或铜线等金属丝线构成的具有一定几何图案的平面 结构。每个基板 1可虚拟地划分为多个长度和宽度分别相等的长方体形网格 10, 每个网格 10的厚度等于基板 1的厚度, 长度和宽度则不大于将要响应的入射电 磁波波长的十分之一。 每一个方体形网格 10为一个基板单元, 每个基板单元及 其表面上附着的人造微结构 2构成一个材料单元 11 , 每个材料片层可以看作是 由这些材料单元 11 以一个材料单元 11 的宽度为行间距、 长度为列间距进行阵 列得到的。 所述人造微结构 2包括两个正对且平行设置的第一开口谐振环 2a及 第二开口谐振环 2b, 所述第二开口谐振环 2b小于所述第一开口 2谐振环。 所述 第一开口谐振环 2a及第二开口谐振环 2b以同样的行间距、 列间距分别阵列排 布在基板 1的正面、 背面。 第一开口谐振环 2a (第二开口谐振环 2b ) 的行间距 为相邻两行第一开口谐振环 2a (第二开口谐振环 2b )在同一列上的两个第一开 口谐振环 2a (第二开口谐振环 2b ) 的中心点的距离, 列间距同理可得。 Referring to FIGS. 1 to 3 together, each of the material sheets includes a sheet substrate 1 and an artificial microstructure attached to the substrate 1. The substrate 1 is usually made of epoxy resin, polytetrafluoroethylene, ceramics, etc., and the artificial microstructure 2 is a planar structure having a certain geometric pattern composed of metal wires such as silver wires or copper wires. Each substrate 1 can be virtually divided into a plurality of rectangular parallelepiped meshes 10 of equal length and width, each mesh 10 having a thickness equal to the thickness of the substrate 1, and the length and width are not greater than ten wavelengths of incident electromagnetic waves to be responsive. One of the points. Each of the square-shaped grids 10 is a substrate unit, and each of the substrate units and the artificial microstructures 2 attached to the surface thereof constitute a material unit 11, and each of the material sheets can be regarded as These material units 11 are arrayed by the width of one material unit 11 as a line pitch and the length as a column pitch. The artificial microstructure 2 includes two first open resonant rings 2a and a second open resonant ring 2b disposed in parallel and parallel, and the second open resonant ring 2b is smaller than the first open 2 resonant ring. The first open resonant ring 2a and the second open resonant ring 2b are arranged in an array on the front and back sides of the substrate 1 at the same row pitch and column pitch. The line spacing of the first open resonant ring 2a (the second open resonant ring 2b) is two first open resonant rings 2a of the adjacent two rows of the first open resonant ring 2a (the second open resonant ring 2b) on the same column ( The distance between the center points of the second open resonant ring 2b) is similarly available.
第一、 第二开口谐振环 2a、 2b正对着, 也即二者分別位于同一个基板单元 的正面和背面范围之内。 并且, 第一、 第二开口谐振环 2a、 2b为尺寸不相同的 两个开口谐振环。 所述第二开口谐振环 2b与所述第一开口谐振环 2a的开口朝 向相同。  The first and second open resonant rings 2a, 2b are opposed to each other, that is, they are respectively located within the front and back surfaces of the same substrate unit. Further, the first and second open resonant rings 2a, 2b are two open resonant rings of different sizes. The second open resonance ring 2b is open to the same direction as the opening of the first open resonance ring 2a.
开口谐振环, 是由单根金属丝围成的、 起始端和末端之间隔有一定距离从 而形成开口的近似环形结构, 能够起到谐振效果。 本发明的第一开口谐振环 2a 和第二开口谐振环 2b二者的开口谐振环尺寸不同, 因此二者各自的谐振效果也 不同, 通过组合而得到的材料单元 11能够实现负磁导率的效果。  The open resonant ring is an approximately annular structure surrounded by a single wire and having a certain distance between the starting end and the end to form an opening, which can achieve a resonance effect. The open resonant ring of the first open resonant ring 2a and the second open resonant ring 2b of the present invention are different in size, and therefore the resonance effects of the two are different, and the material unit 11 obtained by the combination can realize the negative magnetic permeability. effect.
如图 2所示, 优选实施例中, 第二开口谐振环 2b为近 "口" 字形开口谐振 环, 包括 字形金属丝和分别自所述 字形金属丝两端水平向中间延 伸的两根不相接的横线。 如图 1所示, 所述第一开口谐振环 2a为近 "凹" 字形 开口谐振环, 其除包括近 "口" 字形开口谐振环所具有的 字形金属丝和 两根横线外, 还包括自两根横线末端竖直向环内延伸且与 字形金属丝底 部存在间隙的两根相平行的竖线。 即向下延伸的竖线未到达 字形金属丝 底部。 第一、 第二开口谐振环 2a、 2b 的形状可以互换, 即第一开口谐振环 2a 为近 "口" 字形开口谐振环, 第二开口谐振环 2b为近 "凹" 字形开口谐振环。  As shown in FIG. 2, in the preferred embodiment, the second open resonant ring 2b is a near-port-shaped open-end resonant ring, including a g-shaped wire and two non-phases extending horizontally from the ends of the g-shaped wire respectively. Connected horizontal lines. As shown in FIG. 1, the first open resonant ring 2a is a near-concave-shaped open resonant ring, which includes, in addition to the glyph wire and two horizontal lines of the near-mouth-shaped open resonant ring, Two parallel vertical lines extending from the ends of the two transverse lines vertically into the ring and having a gap with the bottom of the glyph wire. That is, the vertical line extending downward does not reach the bottom of the glyph wire. The shapes of the first and second open resonant rings 2a, 2b may be interchanged, that is, the first open resonant ring 2a is a near "mouth" shaped open resonant ring, and the second open resonant ring 2b is a near "concave" open resonant ring.
当然, 本发明的第一、 第二开口谐振环 2a、 2b并不仅限于上述近 "凹" 字 形、 近 "口" 字形开口谐振环, 还可以是上述开口谐振环的衍生结构, 例如近 "凹" 字形开口谐振环的衍生结构即为该开口谐振环及自其两条竖线的末端向 环内部任意延伸且不相交的金属线所构成的结构, 近 "口" 字形开口谐振环的 衍生结构为该开口谐振环及自其两条横线的末端向环内部任意延伸且不相交的 金属线所构成的结构。  Of course, the first and second open resonant rings 2a, 2b of the present invention are not limited to the above-mentioned near-concave-shaped, near-mouth-shaped open-end resonant ring, and may also be a derivative structure of the above-mentioned open resonant ring, for example, near concave The derivative structure of the glyph-shaped resonant ring is a structure composed of the open resonant ring and a metal wire extending from the end of the two vertical lines to the inside of the ring and not intersecting, and the derivation structure of the near-mouth-shaped open resonant ring The open resonant ring and a structure formed by arbitrarily extending and not intersecting metal wires from the ends of the two horizontal lines to the inside of the ring.
在本优选实施例中, 近 "口" 字形的第二开口谐振环 2b小于近 "凹" 字形 的第一开口谐振环 2a,且位于第一开口谐振环 2a沿垂直于基板正面的垂直投影 的内部, 即所述第二开口谐振环 2b位于所述第一开口谐振环 2a的环形正投影 内部。 如图 3所示。 优选地, 第二开口谐振环 2b位于第一开口谐振环 2a的垂 直环形投影的正中间, 即二者的中心点重合。 In the preferred embodiment, the second open resonant ring 2b of the near "mouth" shape is smaller than the near "concave" shape The first open resonant ring 2a is located inside the vertical projection of the first open resonant ring 2a perpendicular to the front surface of the substrate, that is, the second open resonant ring 2b is located inside the annular orthographic projection of the first open resonant ring 2a . As shown in Figure 3. Preferably, the second open resonant ring 2b is located in the middle of the vertical annular projection of the first open resonant ring 2a, i.e., the center points of the two coincide.
本发明正是利用上述这样一大一小两个开口谐振环、 通过两个开口谐振环 得到两个谐振峰, 改变两个谐振环之间的距离和调节二者的尺寸, 可以控制两 个谐振峰的谐振强度和谐振频率, 进而由一个谐振环得到的谐振峰和另一个谐 振环产生的谐振峰之间可取得一段从零开始的平滑连续的磁导率, 也即得到低 磁导率的材料。  The invention utilizes the above two large and small open resonant rings, obtains two resonance peaks through two open resonant rings, changes the distance between the two resonant rings and adjusts the size of the two, and can control two resonances. The resonant strength and the resonant frequency of the peak, and thus the resonant peak obtained by one resonant ring and the resonant peak generated by the other resonant ring, can obtain a smooth continuous magnetic permeability from zero, that is, a material with low magnetic permeability. .
以本优选实施例为例, 当入射电磁波频率为 60~80GHz 时, 则取材料单元 11的宽度 H也即人造微结构的行间距为 2.5mm, 取材料单元 11的长度 W也即 列间距为 2.5mm, 人造微结构的金属丝线宽为 0.1mm, 线厚为 0.018mm; 其中, 所述第一开口谐振环 2a的尺寸 HI X W1为 2.2mm x 2.2mm, 两侧距离材料单元 11 的侧壁距离 dl 为 0.15mm, 底部距离材料单元 11 的下底面的距离 bl 为 0.15mm, 两条竖线之间的距离 al 为 0.5mm; 第二开口谐振环 2b的尺寸 H2 χ W2为 1.5mm x 1.5mm,其两侧到第一开口谐振环 2a的两侧线距离 d2为 0.25mm, 底部到第一开口谐振环 2a的底部距离 b2为 0.25mm, 两条横线之间的距离 a2 为 0.24mm。 并且, 本发明的基板选用聚四氟乙烯, 人造微结构由铜线制成。  Taking the preferred embodiment as an example, when the incident electromagnetic wave frequency is 60-80 GHz, the width H of the material unit 11 is also 2.5 mm, and the length W of the material unit 11 is also the column spacing. 2.5mm, the artificial microstructure has a wire width of 0.1 mm and a wire thickness of 0.018 mm; wherein the first open resonant ring 2a has a size HI X W1 of 2.2 mm x 2.2 mm, and the sides are away from the side of the material unit 11 The wall distance dl is 0.15 mm, the distance from the bottom to the lower bottom surface of the material unit 11 is 0.15 mm, and the distance a between the two vertical lines is 0.5 mm; the size of the second open resonance ring 2b is H2 χ W2 is 1.5 mm x 1.5mm, the distance d2 between the two sides of the first open resonant ring 2a is 0.25mm, the bottom distance from the bottom to the first open resonant ring 2a is 0.25mm, and the distance between the two horizontal lines is 0.24mm. . Moreover, the substrate of the present invention is made of polytetrafluoroethylene, and the artificial microstructure is made of copper wire.
此材料单元 11的仿真结果如图 4所示, 图 4为仿真出的磁导率频谱图的实 部, f。频段的磁导率即是所要求的从零开始且连续平滑变化到 1的磁导率, f0的 范围大约为 55~78GHz, 带宽为 25GHz。 The simulation result of this material unit 11 is shown in Fig. 4, and Fig. 4 is the real part of the simulated magnetic permeability spectrum diagram, f. The magnetic permeability of the frequency band is the required magnetic permeability starting from zero and continuously changing smoothly to 1, f 0 is in the range of about 55 to 78 GHz, and the bandwidth is 25 GHz.
f0频率段可通过调节第一或第二开口谐振环 2a、 3b的尺寸来实现前移或后 移。 The f 0 frequency band can be moved forward or backward by adjusting the size of the first or second open resonant ring 2a, 3b.
例如, 在上述实施例中, 保持基板材料为聚四氟乙烯、 人造微结构由铜线 制成, 并且不改变材料单元 11、 第一开口谐振环 2a的尺寸和二者的相对位置即 W、 H、 Wl、 Hl、 al、 bl、 dl均不变, 线宽仍为 0.1mm, 只减小第二开口谐振 环 2b 的尺寸, 改变后的尺寸分为为 W2=l.lmm, H2=l.lmm, a2=0.24mm, d2=0.45mm, b2=0.45mm。  For example, in the above embodiment, the substrate material is made of polytetrafluoroethylene, and the artificial microstructure is made of copper wire, and the size of the material unit 11, the first open resonant ring 2a, and the relative positions of the two are not changed, that is, H, Wl, Hl, al, bl, dl are all unchanged, the line width is still 0.1mm, only the size of the second open resonant ring 2b is reduced, and the changed size is divided into W2=l.lmm, H2=l .lmm, a2=0.24mm, d2=0.45mm, b2=0.45mm.
尺寸改变后的材料单元 11 , 其仿真结果如图 5所示。 由图 5可知, 磁导率 从零开始且緩慢变化的频段 f。为 58~63GHz, 带宽为 5GHz。 由此可知,減小第二开口谐振环 2b的尺寸,能够使低磁导率频段带宽变窄。 第一个谐振峰后移, 第二个谐振峰前移。 The material unit 11 after the size change has a simulation result as shown in FIG. 5. As can be seen from Fig. 5, the frequency band f whose magnetic permeability starts from zero and changes slowly. It is 58~63GHz and the bandwidth is 5GHz. From this, it can be seen that reducing the size of the second open resonance ring 2b can narrow the bandwidth of the low magnetic permeability band. The first resonant peak shifts back and the second resonant peak advances.
另外, 根据将要响应的入射电磁波频率的不同, 材料单元 11及第一、 第二 开口谐振环 2a、 3b的尺寸也相应不同。例如,当入射电磁波频率减小为 40~60GHz 时, 材料单元 11的长度和宽度优选为 4mm, 所述第一开口谐振环 2a的尺寸为 3.5mm x 3.5mm, 第二开口谐振环 2b的尺寸为 2mm x 2mm。  Further, the sizes of the material unit 11 and the first and second open resonance rings 2a, 3b are also different depending on the frequency of the incident electromagnetic wave to be responded to. For example, when the frequency of the incident electromagnetic wave is reduced to 40 to 60 GHz, the length and width of the material unit 11 are preferably 4 mm, the size of the first open resonant ring 2a is 3.5 mm x 3.5 mm, and the size of the second open resonant ring 2b It is 2mm x 2mm.
以上所揭露的仅为本发明一种较佳实施例而已, 当然不能以此来限定本发 明之权利范围, 因此依本发明权利要求所作的等同变化, 仍属本发明所涵盖的 范围。  The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and the equivalent changes made by the claims of the present invention are still within the scope of the present invention.

Claims

权 利 要 求 Rights request
1. 一种人造微结构, 所述人造微结构包括两个正对且平行设置的第一开口 谐振环及第二开口谐振环, 所述第二开口谐振环小于所述第一开口谐振环。 An artificial microstructure comprising two first open and parallel resonant rings and a second open resonant ring, the second open resonant ring being smaller than the first open resonant ring.
2. 如权利要求 1所述的人造微结构, 其特征在于, 所述第二开口谐振环位 于所述第一开口谐振环的环形正投影内部。  2. The artificial microstructure of claim 1 wherein the second open resonant ring is located inside a circular orthographic projection of the first open resonant ring.
3. 如权利要求 1所述的人造微结构, 其特征在于, 所述第二开口谐振环位 于所述第一开口谐振环的环形正投影的正中间。  3. The artificial microstructure of claim 1 wherein the second open resonant ring is located in the middle of the annular orthographic projection of the first open resonant ring.
4. 如权利要求 1-3 项中任意一项所述的人造微结构, 其特征在于, 所述第 一开口谐振环为近 "凹" 字形开口谐振环, 所述第二开口谐振环为近 "口" 字 形开口谐振环。  The artificial microstructure according to any one of claims 1 to 3, wherein the first open resonant ring is a near-concave-shaped open resonant ring, and the second open resonant ring is near "mouth" glyph opening resonant ring.
5. 如权利要求 1-3 项中任意一项所述的人造微结构, 其特征在于, 所述第 一开口谐振环为近 "凹" 字形开口谐振环的衍生结构, 所述第二开口谐振环为 近 "口" 字形开口谐振环的衍生结构。  The artificial microstructure according to any one of claims 1 to 3, wherein the first open resonant ring is a derivation structure of a near-concave-shaped open resonant ring, and the second open resonance The ring is a derivative structure of the near-mouth "letter" open-end resonant ring.
6. 如权利要求 5所述的低磁导率的人造微结构, 其特征在于, 所述第二开 口谐振环包括 字形金属丝和分别自所述 字形金属丝两端水平向中 间延伸的两根不相接的横线, 所述第一开口谐振环包括 字形金属丝和分 别自所述 字形金属丝两端水平向中间延伸的两根不相接的横线, 所述第 一开口谐振环还包括自两根横线末端竖直向环内延伸且与 字形金属丝底 部存在间隙的两根相平行的竖线。  6. The low-permeability artificial microstructure according to claim 5, wherein the second open resonant ring comprises a gem-shaped wire and two horizontally extending from the ends of the g-shaped wire, respectively. a non-contiguous horizontal line, the first open resonant ring includes a gem-shaped wire and two non-contiguous horizontal lines extending horizontally from the ends of the g-shaped wire respectively, the first open resonant ring further Included are two parallel vertical lines extending from the ends of the two transverse lines vertically into the ring and having a gap with the bottom of the glyph wire.
7. 如权利要求 1-3 项中任意一项所述的人造微结构, 其特征在于, 所述第 二开口谐振环与所述第一开口谐振环的开口朝向相同。  The artificial microstructure according to any one of claims 1 to 3, wherein the second open resonant ring has the same opening orientation as the first open resonant ring.
8. 如权利要求 1所述的人造微结构, 其特征在于, 所述第一开口谐振环的 开口的两个末端向环内部延伸且不相交。  8. The artificial microstructure according to claim 1, wherein both ends of the opening of the first open resonant ring extend toward the inside of the ring and do not intersect.
9. 如权利要求 1所述的人造微结构, 其特征在于, 所述第二开口谐振环的 开口的两个末端向环内部延伸且不相交。  9. The artificial microstructure according to claim 1, wherein both ends of the opening of the second open resonant ring extend toward the inside of the ring and do not intersect.
10. 如权利要求 1所述的人造微结构, 其特征在于, 所述人造微结构由金属 丝制成。  10. The artificial microstructure according to claim 1, wherein the artificial microstructure is made of a metal wire.
11. 如权利要求 10所述的人造微结构, 其特征在于, 所述人造微结构由铜 线制成。 11. The artificial microstructure according to claim 10, wherein the artificial microstructure is made of copper wire.
12. 如权利要求 10所述的人造微结构, 其特征在于, 所述人造微结构由银 线制成。 The artificial microstructure according to claim 10, wherein the artificial microstructure is made of silver wire.
13. 如权利要求 10所述的人造微结构, 其特征在于, 所述人造微结构由单 根金属丝围成。  13. The artificial microstructure of claim 10, wherein the artificial microstructure is surrounded by a single wire.
14. 一种人工电磁材料, 包括至少一个材料片层, 每个材料片层包括片状基 板和多个如权利要求 1-14项中任意一项所述的人造微结构, 所述人造微结构的 第一开口谐振环及第二开口谐振环分别附着在所述基板的正面及所述基板的背 面。  An artificial electromagnetic material comprising at least one sheet of material, each sheet of material comprising a sheet substrate and a plurality of artificial microstructures according to any one of claims 1-14, said artificial microstructure The first open resonant ring and the second open resonant ring are respectively attached to the front surface of the substrate and the back surface of the substrate.
15. 如权利要求 14所述的人工电磁材料, 其特征在于, 所述第一开口谐振 环排列成阵列的行间距及列间距分别与所述第二开口谐振环排列成阵列的行间 距及列间距相等。  The artificial electromagnetic material according to claim 14, wherein the first open resonant ring is arranged in an array of row pitches and column pitches, and the second open resonant ring is arranged in an array of row pitches and columns. The spacing is equal.
16. 如权利要求 14所述的人工电磁材料, 其特征在于, 所述行间距和列间 距小于等于所述人工电磁材料响应的入射电磁波波长的十分之一。  16. The artificial electromagnetic material according to claim 14, wherein the line spacing and the column pitch are less than or equal to one tenth of a wavelength of an incident electromagnetic wave responsive to the artificial electromagnetic material.
17. 如权利要求 14所述的人工电磁材料, 其特征在于, 所述基板由陶瓷制 成。  The artificial electromagnetic material according to claim 14, wherein the substrate is made of ceramic.
18. 如权利要求 14所述的人工电磁材料, 其特征在于, 所述基板由聚四氟 乙烯或环氧树脂制成。  The artificial electromagnetic material according to claim 14, wherein the substrate is made of polytetrafluoroethylene or epoxy.
19. 如权利要求 14所述的人工电磁材料, 其特征在于, 所述人工电磁材料 包括叠加的多块材料片层。  19. The artificial electromagnetic material of claim 14, wherein the artificial electromagnetic material comprises a plurality of layers of material that are superimposed.
20. 如权利要求 19所述的人工电磁材料, 其特征在于, 所述多块材料片层 采用焊接、 铆接或粘接中任意一种封装工艺堆叠。  20. The artificial electromagnetic material according to claim 19, wherein the plurality of material sheets are stacked by any one of soldering, riveting or bonding.
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