WO2012169754A3 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
WO2012169754A3
WO2012169754A3 PCT/KR2012/004397 KR2012004397W WO2012169754A3 WO 2012169754 A3 WO2012169754 A3 WO 2012169754A3 KR 2012004397 W KR2012004397 W KR 2012004397W WO 2012169754 A3 WO2012169754 A3 WO 2012169754A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate treating
treating apparatus
chamber
substrate
holder
Prior art date
Application number
PCT/KR2012/004397
Other languages
English (en)
French (fr)
Other versions
WO2012169754A2 (ko
Inventor
강호영
조병호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110056269A external-priority patent/KR101306767B1/ko
Priority claimed from KR1020110059803A external-priority patent/KR101297666B1/ko
Priority claimed from KR1020110059804A external-priority patent/KR101297670B1/ko
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Publication of WO2012169754A2 publication Critical patent/WO2012169754A2/ko
Publication of WO2012169754A3 publication Critical patent/WO2012169754A3/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

기판 처리 장치가 개시된다. 본 발명에 따른 기판 처리 장치는 홀더는 챔버에 배치되어 남아있고, 기판만이 챔버에 로딩되고 챔버로부터 언로딩된다. 따라서, 홀더를 재가열하기 위한 에너지 및 시간이 상대적으로 적게 소요되므로, 기판 처리 공정의 생산성이 향상되는 효과가 있다.
PCT/KR2012/004397 2011-06-10 2012-06-04 기판 처리 장치 WO2012169754A2 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020110056269A KR101306767B1 (ko) 2011-06-10 2011-06-10 기판 처리 장치
KR10-2011-0056269 2011-06-10
KR10-2011-0059804 2011-06-20
KR10-2011-0059803 2011-06-20
KR1020110059803A KR101297666B1 (ko) 2011-06-20 2011-06-20 기판 처리 장치
KR1020110059804A KR101297670B1 (ko) 2011-06-20 2011-06-20 기판 처리 장치

Publications (2)

Publication Number Publication Date
WO2012169754A2 WO2012169754A2 (ko) 2012-12-13
WO2012169754A3 true WO2012169754A3 (ko) 2013-04-04

Family

ID=47296570

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004397 WO2012169754A2 (ko) 2011-06-10 2012-06-04 기판 처리 장치

Country Status (2)

Country Link
TW (1) TW201308511A (ko)
WO (1) WO2012169754A2 (ko)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349775A (ja) * 1993-06-10 1994-12-22 Tokyo Electron Ltd 処理装置
KR20080082270A (ko) * 2007-03-08 2008-09-11 (주)소슬 승강 장치, 이를 포함하는 기판 처리 장치 및 이를이용하여 기판을 처리하는 방법
KR20090030231A (ko) * 2007-09-19 2009-03-24 도쿄엘렉트론가부시키가이샤 상압 건조 장치 및 기판 처리 장치 및 기판 처리 방법
KR20100008722A (ko) * 2008-07-16 2010-01-26 주식회사 테라세미콘 배치식 열처리 장치
KR20100026274A (ko) * 2008-08-29 2010-03-10 주식회사 테라세미콘 보트
KR20100106042A (ko) * 2009-03-23 2010-10-01 주식회사 테라세미콘 인라인 열처리 장치
KR20110006091A (ko) * 2009-07-13 2011-01-20 주식회사 아이피에스 기판처리 장치 및 방법과, 이를 포함한 인라인 처리 시스템 및 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349775A (ja) * 1993-06-10 1994-12-22 Tokyo Electron Ltd 処理装置
KR20080082270A (ko) * 2007-03-08 2008-09-11 (주)소슬 승강 장치, 이를 포함하는 기판 처리 장치 및 이를이용하여 기판을 처리하는 방법
KR20090030231A (ko) * 2007-09-19 2009-03-24 도쿄엘렉트론가부시키가이샤 상압 건조 장치 및 기판 처리 장치 및 기판 처리 방법
KR20100008722A (ko) * 2008-07-16 2010-01-26 주식회사 테라세미콘 배치식 열처리 장치
KR20100026274A (ko) * 2008-08-29 2010-03-10 주식회사 테라세미콘 보트
KR20100106042A (ko) * 2009-03-23 2010-10-01 주식회사 테라세미콘 인라인 열처리 장치
KR20110006091A (ko) * 2009-07-13 2011-01-20 주식회사 아이피에스 기판처리 장치 및 방법과, 이를 포함한 인라인 처리 시스템 및 방법

Also Published As

Publication number Publication date
WO2012169754A2 (ko) 2012-12-13
TW201308511A (zh) 2013-02-16

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