WO2012156300A1

WO2012156300A1 - Method for producing a two-dimensional lattice structure having edge dislocations with a controlled period

Info

Publication number: WO2012156300A1
Application number: PCT/EP2012/058750
Authority: WO
Inventors: Frank Fournel
Original assignee: Commissariat à l'énergie atomique et aux énergies alternatives
Priority date: 2011-05-13
Filing date: 2012-05-11
Publication date: 2012-11-22
Also published as: FR2975109A1; FR2975109B1

Abstract

The present invention relates to a method for producing a two-dimensional lattice structure having periodic edge dislocations, said method consisting of: supplying two elementary base structures (1', 2') having a crystalline portion (23, 43), which is derived from a single unit, and has a single lattice constant, a single crystal lattice, and at least one reference mark (31, 34), wherein the two reference marks (31, 34) each have the same orientation with respect to the lattice of the crystalline portion (23, 43) that has said reference marks; imposing a selected constraint on at least one crystalline portion (23, 43) in order to change the lattice constant thereof in a desired manner, in order to have a processed elementary structure (48, 65) available; assembling the crystalline portion (43) of a processed elementary structure (48) with another crystalline portion (23) of a processed elementary structure (65) or of an elementary base structure (1') by causing the registration marks (31, 34) thereof to coincide so that a discrepancy in the lattice constants arises and creates the two-dimensional periodic edge dislocation lattice having the desired periodicity.

Description

METHOD FOR MAKING A TWO-DIMENSIONAL NETWORK STRUCTURE OF COIN DISLOCATIONS WITH A CONTROLLED PERIOD

DESCRIPTION TECHNICAL FIELD

The present invention relates to the production of a structure provided with a network of periodic dislocations coin whose extension is in a plane and whose period is controlled. Such a structure can be used in microelectronics, optics, optoelectronics.

STATE OF THE PRIOR ART

The main technique for obtaining a network of dislocations consists of assembling two crystalline substrates by direct molecular bonding and thus forming, at the interface, a grain boundary. The direct molecular bonding makes it possible to obtain a bond between the two crystalline materials to be assembled without the addition of material such as glue or any other adhesive.

There are three types of crystalline disorientation leading to the formation of a grain boundary during a molecular bonding of crystalline materials: twist or twist disorientation (twist in English), tilt disorientation (English tilt) and the disorientation due to a difference in mesh parameter as explained in document [1] whose references are at the end of the description. As described by D. Hull in Chapter 9, paragraphs 9.1, 9.2 of the document [2] whose references are at the end of the description, a disorientation in pure torsion will cause the formation of a network of screw dislocations whose pitch depends on the angle of disorientation. The connection of the two surfaces to be assembled generates a two-dimensional network of screw dislocations.

Disorientation in pure bending will cause the formation of a network of dislocations wedge. The connection of the two surfaces to be assembled generates a one-dimensional network of corner dislocations.

Crystal disorientation due to the clash of pure mesh parameters will also generate a network of wedge dislocations. The connection of the two surfaces to be assembled generates a two-dimensional network of corner dislocations.

Of course, if the grain boundary is composed of two crystals of the same nature, for example two silicon crystals, the bicrystal obtained after the assembly can have only bending or twisting disorientations, since the mesh parameter is the even on both sides of the grain boundary.

On the other hand, if the two crystals are of different natures, for example a silicon crystal and a germanium crystal, the three types of crystalline disorientation may be present. If several crystalline disorientations are present, the dislocation arrays created are more complex than if only one crystalline disorientation is present. This complexity is due, among other things, to the interaction of dislocations between them. Such dislocation networks can be very interesting for nanostructuring the surface of a material and / or for spatially organizing the deposition or growth of nanostructures on dislocations as described in documents [1], [3], [4]. Subsequently, we will talk about organization of nanostructures for the organization of the deposition or growth of nanostructures on dislocations

In this view, it is known that wedge type dislocations are more powerful than screw type dislocations, they seem to be better candidates for surface nanostructuration or the organization of nanostructures. Screw type dislocations would, according to document [1], be less able to create preferential nucleation sites.

On the other hand, if it is desired to nanostructure the surface of a substrate or to organize nanostructures in a two-dimensional manner, it is necessary to use two different mesh parameters and thus to use different materials. The choice of materials is limited, and the periods of dislocation networks that can be obtained also.

It is no longer easy to arrive at the desired result. It is necessary to have two crystals in monocrystalline form, compatible with direct bonding, in order to create a planar joint grain that can be used for surface nanostructuring or the organization of nanostructures. These two single crystals must be chosen so that the difference of their parameter of mesh respectively may allow to approach the period of the desired corner dislocations. Once you have determined which single crystals to use, you have to prepare them physically and chemically. Indeed, to successfully bring the two crystals together, it is necessary that the surfaces to be assembled have certain specificities, one seeks to have the most planar surfaces possible, with the least possible of undulations and microrugosities. To obtain a good quality bonding, it is necessary to chemically prepare the surfaces to be assembled, to clean them and according to whether the bonding is hydrophobic or hydrophilic, either to remove the native oxide on the surface or to generate the native oxide on the surface. . These preparations consume time and energy and each time we change the crystal pair, it is necessary to rethink the physical and chemical preparations.

Moreover, if it is desired to obtain at the bonding interface only two-dimensional corner dislocations, it is necessary to eliminate the other crystalline disorientations and in particular the one-dimensional corner crystalline dislocations as described in document [5]. This is not easy when the crystalline materials are different in nature and are therefore not from the same ingot.

Moreover, for the organization of nanostructures, the crystalline materials to be assembled must not contain dislocations of another nature, otherwise the periodicity of the stress field of the lattice network will be disturbed. corner dislocations that one seeks to create. It is therefore preferable not to use crystalline materials created by epitaxy that would leave dislocations rates important. STATEMENT OF THE INVENTION

The object of the present invention is precisely to propose a method for producing a structure having a two-dimensional network of periodic dislocations whose corner is chosen.

To achieve this, the present invention proposes not to use, to obtain the difference of the mesh parameters, crystalline parts made in different materials, but on the contrary to use crystalline parts made in the same material and more from same crystal and change the mesh parameter of at least one of them. In addition, it proposes to assemble the two crystalline parts by aligning their crystal lattice so as to overcome any disorientation in torsion and bending.

More specifically, the present invention provides a method for producing a structure having a two-dimensional network of periodic dislocations wedge comprising the steps of:

providing two basic elementary structures each having a crystalline part supported by a source substrate, these crystalline parts coming from the same crystalline block, having the same mesh parameter, the same crystal lattice, each also having at least one reference, these two benchmarks having a same orientation with respect to the crystalline lattice of the crystalline part which carries them,

imposing a predetermined constraint on at least one of the crystalline portions, so as to change its mesh parameter in a desired manner, in order to have a treated elementary structure, assemble the crystalline part of a treated elementary structure with a another crystalline part of a treated elementary structure or a basic elementary structure, substantially matching their reference marks so that a disagreement of the mesh parameters appears and creates the two-dimensional network of periodic dislocations corner with a desired periodicity depending on the disagreement of the mesh parameters.

It is preferable to make a hydrophobic assembly to have a crystalline connection, a hydrophilic assembly would provide interfacial oxide that should be removed.

It is possible that the marks are rapporteurs, graduated rules, flats.

Each basic elementary structure is a stack with a source substrate and the crystalline part, each crystalline part having an initial free face and another face bonded to the source substrate.

To provide the two basic basic structures:

it is possible to start from a semiconductor on insulator substrate with a layer of insulator sandwich between two semiconductor layers, one of which is thinner than the other,

ion implantation can be carried out in the thinnest semiconductor layer at an implanted area,

the thinnest semiconductor layer can be provided with at least one common reference, before or after the implantation of ions,

the thinnest semiconductor layer can be applied to a thicker semiconductor substrate oxidized on the surface,

the thinnest semiconductor layer at the implanted zone can be divided into two parts so as to obtain the two basic elementary structures with their crystalline part, their source substrate being formed for one of the basic elementary structures. by the other layer of semi ^¬ conductor and the insulating material layer of the semiconductor on insulator substrate, and the other basic element structure, the thicker semi conductive substrate ^¬ reported oxidized surface.

To impose a predetermined voltage stress on the crystalline part of a basic basic structure at a first reference temperature and transform it into a treated elementary structure, a first voltage sequence can be carried out in which:

a) a target substrate is glued into a material having a coefficient of thermal expansion less than that of the source substrate material of the crystalline part, on the initial free face of the crystalline part, at a temperature above the first reference temperature,

b) the source substrate is removed so as to expose the other side of the crystalline part,

cl °) a target substrate is adhered to the other side of the crystalline part, substantially at the first reference temperature, this target substrate being in a material having a coefficient of thermal expansion greater than that of the target substrate material bonded during the first bonding step a) of the first tensioning sequence,

dl °) the target substrate bonded during the first bonding step al °) is removed from the first tensioning sequence, exposing the initial free face of the crystalline portion which is stressed in tension, this stress in tension being less than or equal to the predetermined voltage stress, this initial free face becoming a connecting face if step d1 °) is a final step of tensioning.

In order to further stress the crystalline part if the predetermined voltage is not reached at the end of step d1 °) of the first tensioning sequence, it is possible to carry out one or more additional tensioning sequences. after step d1) until reaching the predetermined voltage, in each additional power-up sequence:

(a) a target substrate is adhered to the initial free face of the crystalline portion, at a temperature higher than the first reference temperature, this target substrate being in a material having a coefficient of thermal expansion less than that of the target substrate material stuck on the other side of the crystalline part, during the second step of bonding the previous sequence,

bl '°) is removed the target substrate stuck on the other side of the crystalline portion, during the second bonding step of the previous sequence, so as to expose the other side of the crystalline portion,

cl '°) is glued on the other side a target substrate of a material having a coefficient of thermal expansion greater than that of the target substrate material adhered to the crystalline portion, the first step of bonding the current sequence, substantially at the first reference temperature, or

a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part is glued on the other side, substantially at the first reference temperature, this alternative being preferred during the last additional sequence, dl The target substrate bonded to the first bonding step is removed from the current sequence exposing the initial free face of the crystalline portion which is stress-stressed, this initial free face becoming a bonding face if step d '°) is a final step of tensioning,

during the last additional tensioning sequence, at the end of step b1 ') the crystalline portion then having a voltage stress equal to the predetermined voltage stress at the first reference temperature, the difference between the first reference temperature and the temperature above the first reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

Advantageously, when the predetermined tension stress has been reached and at the end of the tensioning sequence, the crystalline part is bonded to a target substrate made of a material with a coefficient of thermal expansion different from that of the crystalline part, to avoid that the stress in tension evolves later, the initial free face of the crystalline part being exposed, it is possible to carry out a finishing sequence in which:

all °) a target substrate of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the first reference temperature, is adhered to the initial free face of the crystalline part,

b1) the target substrate is removed from the material with a coefficient of thermal expansion different from that of the material of the crystalline part so as to expose the other side of the crystalline part,

cll °) is glued on the other side a target substrate of a material having a coefficient of expansion substantially equal to that of the material of the crystalline portion, at any temperature,

dll °) exposes the initial free face of the crystalline part, this initial free face becoming a connecting face.

As a variant, in order to impose a predetermined voltage stress on the crystalline part of a basic elementary structure at a first reference temperature and transform it into a treated elementary structure: a first tensioning sequence may be carried out in which:

al .1 °) a target substrate is bonded to a material having a thermal expansion coefficient greater than that of the source substrate material of the crystalline part, on the initial free face of the crystalline part, at a temperature substantially equal to the first reference temperature,

bl.l °) the source substrate is removed so as to expose the other side of the crystalline part,

cl .1 °) a target substrate is adhered to the other side of the crystalline part, at a temperature higher than the first reference temperature, this target substrate being of a material having a coefficient of thermal expansion less than that of the material of the target substrate bonded during the first bonding step al .1 °) of the first tensioning sequence,

dl.l °) the glued target substrate is removed during the first gluing step of the first tensioning sequence, exposing the free face initial state of the crystalline part which is then stress-stressed, this voltage stress being less than or equal to the predetermined voltage stress, this initial free face becoming a bonding face if the step d1.l °) is a final step of tensioning.

If the predetermined voltage constraint is not reached at the end of step d1 (1) of the first power-up sequence, one or more additional power-up sequences are carried out after step d1. 1) until reaching the predetermined voltage, in each additional power-up sequence:

a target substrate is bonded to the initial free face of the crystalline part at a temperature substantially equal to the first reference temperature, this target substrate being in a material having a coefficient of thermal expansion greater than that of the material target substrate stuck on the other side of the crystalline part during the second bonding step of the preceding sequence,

bl.l '°) is removed the target substrate stuck on the other side of the crystalline portion, during the second bonding step, the previous sequence, so as to expose the other side of the crystalline portion,

Cl.l '°) a target substrate is glued in a material having a coefficient of thermal expansion less than that of the target substrate material adhered to the crystalline portion at the first step of bonding the current sequence, at a temperature greater than the first reference temperature, or a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at a temperature higher than the first temperature of the substrate, is bonded to the other side of the crystalline part; reference, this alternative being preferred during the last additional sequence,

dl.l '°) is removed the target substrate bonded in the first gluing step al .1' °) the current sequence exposing the initial free face of the crystalline portion which is stress-stressed, this free face initial becoming a bonding face if step dl.l '°) is a final step of tensioning,

during the last additional tensioning sequence, at the end of step d1.l '°), the crystalline portion then having a voltage stress equal to the voltage stress predetermined at the first reference temperature, the difference between the first reference temperature and the temperature above the first reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

When the predetermined voltage stress has been reached at the first reference temperature and the crystalline portion is bonded to a target substrate made of a material with a coefficient of thermal expansion different from that of the crystalline part, to prevent the stress in tension evolves later, the initial free face of the crystalline part being exposed, a finishing sequence is carried out in which:

all.l °) a target substrate of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the first reference temperature, is adhered to the initial free face of the crystalline part;

bll.l °) the target substrate is removed in material with a thermal coefficient of thermal expansion different from that of the material of the crystalline part, so as to expose the other side of the crystalline part,

cll.l °) is glued on the other side a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at any temperature,

dll.l °) we expose the initial free face of the crystalline part, this initial free face becoming a connecting face.

To impose a predetermined compressive stress on the crystalline part of a basic elemental structure at a second reference temperature and transform it into a treated elementary structure, a first compression sequence may be carried out in which:

a2 °) a target substrate is glued in a material having a thermal coefficient of expansion greater than that of the substrate material source of the crystalline part, on the initial free face of the crystalline part, at a temperature higher than the second reference temperature,

b2 °) the source substrate is removed so as to expose the other side of the crystalline part,

c2 °) a target substrate is bonded on the other side of the crystalline part, substantially at the second reference temperature, this target substrate being in a material having a coefficient of thermal expansion less than that of the target substrate material bonded during the the first gluing step a2 °) of the first compression sequence,

d2 °) the target substrate bonded during the first bonding step a2 °) is removed from the first compression sequence, exposing the initial free face of the crystalline part which is constrained in compression, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a connecting face if step d2 °) is a final step of compression.

To further compress the crystalline part in compression, if the predetermined compression is not reached in step d2 °) of the first compression sequence, it is possible to carry out one or more additional compression sequences after the first compression sequence. step d2 °) until reaching the predetermined compression, in each additional compression sequence: a2 '°) a target substrate is bonded to the initial free face of the crystalline part, at a temperature higher than the second reference temperature, this target substrate being in a material having a coefficient of thermal expansion greater than that of the substrate material target stuck on the other side of the crystalline part, during the second bonding step of the previous sequence,

b2 '°) is removed the target substrate stuck on the other side of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side of the crystalline part,

c2 '°) is glued on the other side a target substrate of a material having a coefficient of thermal expansion less than that of the target substrate material bonded to the crystalline portion at the first step of bonding the current sequence, substantially to the second reference temperature, or else

a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the second reference temperature, is adhered to the other face, this alternative being preferred during the last additional sequence, d2 The target substrate bonded to the first bonding step a2 '°) of the current sequence exposing the initial free face of the crystalline part which is constrained in compression, this initial free face becoming a bonding face if step d2 '°) is a final stage of compression,

during the last additional compression sequence, at the end of step b2 '°), the crystalline part then having a compressive stress equal to the predetermined compressive stress at the second reference temperature, the difference between the second reference temperature and the temperature above the second reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined compressive stress.

Advantageously, when the predetermined compressive stress has been reached and the crystalline part is bonded to a target substrate made of a material with a coefficient of thermal expansion different from that of the crystalline part, to prevent the stress from evolving subsequently, the initial free face of the crystalline part being exposed, a finishing sequence can be carried out in which:

a22 °) is glued on the initial free face of the crystalline part, a target substrate material having a thermal expansion coefficient substantially equal to that of the crystalline material, substantially at the second reference temperature, b22 °) is removed the target substrate in the material with a thermal coefficient of expansion different from that of the material of the crystalline part so as to expose the other side of the crystalline part, c22 °) is glued on the other side a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at any temperature,

d22 °) exposes the initial free face of the crystalline part, this initial free face becoming a connecting face.

As a variant, in order to impose a predetermined compressive stress on the crystalline part of a basic elementary structure at a second reference temperature and to transform it into a treated elementary structure, a first compression sequence may be carried out in which:

a2.1 °) a target substrate is glued in a material having a coefficient of thermal expansion smaller than that of the source substrate material of the crystalline part, on the initial free face of the crystalline part, at a temperature substantially equal to the second reference temperature,

b2.1 °) the source substrate is removed so as to expose the other side of the crystalline part,

c2.1 °) a target substrate is bonded on the other side of the crystalline part at a temperature greater than the second reference temperature, this target substrate being in a material having a coefficient of thermal expansion greater than that of the material target substrate bonded during the first bonding step a2.1 °) of the first compression sequence, d2.1 °) the target substrate bonded during the first bonding step a2.1 °) is removed from the first sequence exposing the initial free face of the crystalline part which is constrained in compression, this compressive stress being lower or equal to the predetermined compressive stress, this initial free face becoming a bonding face if step d2.1 °) is a final step of compression.

When the predetermined compression is not reached at the end of step d2.1 °) of the first compression sequence, one or more additional compression sequences are carried out after step d2.1 ° ) until reaching the predetermined compression, in each additional compression sequence:

a2.1 '°) a target substrate is bonded to the initial free face of the crystalline part, at a temperature substantially equal to the second reference temperature, this target substrate being in a material having a coefficient of thermal expansion less than that of the target substrate material stuck on the other side of the crystalline part during the second bonding step of the previous sequence,

b2.1 '°) is removed the target substrate stuck on the other side of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side of the crystalline part,

c2.1 '°) is glued on the other side, a target substrate of a material having a coefficient of thermal expansion greater than that of the target substrate material bonded to the crystalline portion at the first bonding step of the current sequence, at a temperature greater than the second reference temperature,

or else a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part is adhered to the other face at a temperature higher than the second reference temperature, this alternative being preferred during the last additional sequence,

d2.1 '°) is removed the target substrate glued to the first gluing step a2.1' °) of the current sequence exposing the initial free face of the crystalline portion which is constrained in compression, this initial free face becoming a bonding face if step d2.1 '°) is a final step of compression,

during the last additional compression sequence, at the end of step d2.1 ', the crystalline part then having a compressive stress equal to the predetermined compressive stress at the second reference temperature, the difference between the second reference temperature and the temperature above the second reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined compressive stress.

When the predetermined compressive stress has been reached and the part crystalline is bonded to a target substrate material of thermal expansion coefficient different from that of the crystalline part, to prevent the stress evolves subsequently, the initial free face of the crystalline portion being exposed, we can achieve a finishing sequence in which :

a22.1 °) is glued on the initial free face of the crystalline portion, a target substrate material having a coefficient of thermal expansion substantially equal to that of the crystalline material, substantially at the second reference temperature, b22.1 °) on removes the target substrate in the material with a thermal coefficient of thermal expansion different from that of the material of the crystalline part, so as to expose the other side of the crystalline part,

c22.1 °) is glued on the other side, a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at any temperature,

d22.1 °) exposes the initial free face of the crystalline part, this initial free face becoming a connecting face.

Alternatively, for the sake of cost reduction, to impose a predetermined voltage stress on the crystalline part of a basic basic structure at a third reference temperature and transform it into a treated elementary structure, a first sequence of tensioning in which: a3 °) a target substrate is bonded to a material having a coefficient of thermal expansion less than that of the material of the crystalline part, on the initial free face of the crystalline part, at a temperature higher than the third reference temperature,

b3 °) the source substrate is removed so as to expose the other side of the crystalline part,

c3 °) a target substrate is glued in a material having a coefficient of thermal expansion substantially equal to that of the crystalline part, on the other side at a temperature substantially equal to the third reference temperature,

d3 °) the target substrate is removed from the material with a lower coefficient of thermal expansion than the material of the crystalline part exposing the initial free face of the crystalline part which is stressed in tension, this voltage stress being less than or equal to to the predetermined voltage constraint, this initial free face becoming a connecting face if step d3 °) is a final step of tensioning.

This first tensioning sequence allows the voltage stress obtained in step d3 °) to no longer change with temperature since the crystalline part is bonded to a target substrate in a material having substantially the same coefficient of thermal expansion as that of the crystalline part. In order to further stress the crystalline part, if the predetermined voltage is not reached in step d3 °) of the first power-up sequence, it is possible to carry out one or more additional tensioning sequences after the step d3 °) until reaching the predetermined voltage constraint, in each additional power-up sequence:

a3 '°) is bonded a target substrate on the initial free face of the crystalline part, at a temperature higher than the third reference temperature, this target substrate being in a material having a coefficient of thermal expansion lower than that of the material of the crystalline part,

b3 '°) is removed the target substrate stuck on the other side of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side of the crystalline part,

c3 '°) is glued on the other side, a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the third reference temperature,

d3 '°) is removed the target substrate bonded to the first bonding step a3')) of the current sequence, exposing the initial free face of the crystalline portion which is stress-stressed, this initial free face becoming a face link if step d3 '°) is a final step of tensioning, during the last additional tensioning sequence, at the end of step b3 '°) the crystalline part then having a voltage stress equal to the predetermined voltage stress at the third reference temperature, the difference between the third reference temperature and the temperature above the third reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

In a variant, to impose a predetermined voltage stress on the crystalline part of a basic elementary structure at a third reference temperature and transform it into a treated elementary structure, a first tensioning sequence may be carried out in which:

a3.1 °) a target substrate is bonded to a material having a coefficient of thermal expansion greater than that of the material of the crystalline part, on the initial free face of the crystalline part, at a temperature substantially equal to the third reference temperature ,

b3.1 °) the source substrate is removed so as to expose the other side of the crystalline part,

c3.1 °) a target substrate is bonded to the other side of the crystalline part at a temperature greater than the third reference temperature, this target substrate being made of a material having a coefficient of thermal expansion substantially equal to that of the material the crystalline part, d3.1 °) the glued target substrate is removed during the first bonding step of the first tensioning sequence, exposing the initial free face of the crystalline portion which is stress-stressed, this voltage stress being lower or equal to the predetermined voltage stress, this initial free face becoming a bonding face if at the end of step d3.1 °) the crystalline part has the predetermined voltage stress at the third reference temperature.

If the predetermined voltage constraint is not reached at the end of step d3.1 °) of the first power-up sequence, it is possible to carry out one or more additional power-up sequences after step d3. 1 °) until reaching the predetermined voltage constraint, in each additional voltage setting sequence:

a3.1 '°) a target substrate is bonded to the initial free face of the crystalline part, at a temperature substantially equal to the third reference temperature, this target substrate made of a material having a coefficient of thermal expansion greater than that of the material the crystalline part, b3.1 '°) is removed the target substrate stuck on the other side of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side of the crystalline part,

c3.1 '°) is glued on the other side of the crystalline portion, a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at a temperature higher than the third reference temperature,

d3.1 '°) is removed the target substrate stuck in the first gluing step a3.1')) of the current sequence, exposing the initial free face of the crystalline portion which is stress-stressed, this face initial free path becoming a connecting face if step d3.1 '°) is a final step of tensioning,

during the last additional tensioning sequence, at the end of step d3.1 '°), the crystalline part then having a voltage stress equal to the predetermined voltage stress at the third reference temperature, the difference between the third reference temperature and the temperature above the third reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

Alternatively, for the sake of cost reduction, to impose a predetermined compressive stress on the crystalline part of a basic elementary structure at a fourth reference temperature and transform it into a treated elementary structure, a first sequence can be realized. in compression in which:

a4 °) a target substrate is glued in a material having a coefficient of thermal expansion less than that of the material of the crystalline part, on the initial free face of the crystalline part, at a temperature substantially equal to the fourth reference temperature,

b4 °) the source substrate is removed so as to expose the other side of the crystalline part,

c4 °) a target substrate is bonded to the other side of the crystalline part, at a temperature higher than the fourth reference temperature, this target substrate being made of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part,

d4 °) is removed the target substrate bonded during the first bonding step a4 °) of the first compression sequence, exposing the initial free face of the crystalline portion which is constrained in compression, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a connecting face if step d4 °) is a final step of compression.

This first compression sequence allows the compression stress obtained in step d4 °) to no longer change with temperature since the crystalline part is bonded to a target substrate in a material having substantially the same coefficient of thermal expansion as that of the crystalline part.

To further compress the crystalline part in compression, if the predetermined compression is not reached at the end of step d4 °) of the first compression sequence, it is possible to performing one or more additional compression sequences after step d4 °) until reaching the predetermined compressive stress, in each additional compression sequence:

a4 '°) a target substrate is bonded to the initial free face of the crystalline part at a temperature substantially equal to the fourth reference temperature, this target substrate being in a material having a coefficient of thermal expansion less than that of the material of the crystalline part, b4 '°) is removed the target substrate stuck on the other side of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side of the part crystalline,

c4 '°) is glued on the other side, a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at a temperature above the fourth reference temperature,

d4 ') the target substrate bonded to the first bonding step a4' °) is removed from the current sequence, exposing the initial free face of the crystalline part which is constrained in compression, this initial free face becoming a face link if step d4 '°) is a final step of compression,

during the last additional compression sequence, at the end of step d4 '°) the crystalline part then having a stress in compression equal to the predetermined compressive stress at the fourth reference temperature, the difference between the fourth reference temperature and the temperature above the fourth reference temperature, the target substrate materials and the number of sequences being selected to obtain the constraint in predetermined compression.

In a variant, to impose a predetermined compressive stress on the crystalline part of a basic elementary structure at a fourth reference temperature and transform it into a treated elementary structure, a first compression sequence may be carried out in which:

a4.1 °) a target substrate, in a material having a coefficient of thermal expansion greater than that of the material of the crystalline part, is bonded to the initial free face of the crystalline part, at a temperature higher than the fourth reference temperature ,

b4.1 °) the source substrate is removed so as to expose the other side of the crystalline part,

c4.1 °) a target substrate is glued on the other side of the crystalline part, in a material having substantially the same coefficient of thermal expansion as that of the crystalline part, at a temperature substantially equal to the fourth reference temperature,

d4.1 °) the glued target substrate is removed during the first gluing step a4.1 °) of the first sequence exposing the initial free face of the crystalline part which is constrained in compression, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a bonding face if at step d4.1 °) the crystalline part has the constraint in predetermined compression at the fourth reference temperature.

If the predetermined compression is not reached in step d4.1 °) of the first compression sequence, one or more additional compression sequences are carried out after the step d4.1 °) until to reach the predetermined compressive stress, in each additional compression sequence:

a4.1 '°) a target substrate is bonded to the initial free face of the crystalline part, at a temperature higher than the fourth reference temperature, this target substrate being in a material having a coefficient of thermal expansion greater than that of the material of the crystalline part, during the second bonding step of the previous sequence,

b4.1 '°) is removed the target substrate stuck on the other side of the crystalline portion during the second bonding step of the previous sequence, so as to expose the other side of the crystalline portion,

c4.1 '°) is glued on the other side, a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at a temperature substantially equal to the fourth reference temperature,

d4.1 '°) is removed the target substrate glued to the first gluing step a2.1')) of the current sequence, exposing the initial free face of the crystalline portion which is constrained in compression, during the last additional compression sequence, at the end of step b4.1 '°) the crystalline portion then having a compressive stress equal to the predetermined compressive stress at the fourth reference temperature, the difference between the fourth reference temperature and the temperature above the fourth reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined compressive stress.

To consolidate the bonding, it is possible to perform a thermal annealing step, at a temperature that is preferentially greater than that of the bonding, after each bonding step.

The steps of removal can be done by lapping and etching.

The first, second, third and fourth reference temperatures are substantially equal to an ambient temperature.

The material of the crystalline part and the material with a coefficient of thermal expansion substantially equal to that of the material of the crystalline part can be chosen from silicon, germanium, gallium nitride, carbide of silicon, gallium arsenide, indium phosphide.

The material having a coefficient of thermal expansion greater than that of the material of the crystalline part, the material with a coefficient of thermal expansion less than that of the material of the crystalline part may be chosen from silicon, germanium, fused silica, glass, silicon carbide, gallium arsenide, indium phosphide, sapphire, copper, aluminum.

The present invention also relates to a structure having two crystalline parts assembled, and to the interface between the two crystalline parts, a two-dimensional network of periodic dislocations wedge. The crystalline parts are made of the same crystalline material from the same crystal, the crystalline parts having their crystal lattices substantially coincidental, at least one of the crystalline portions being constrained by a predetermined value and having a different mesh parameter from that of the other crystalline part, so that the two-dimensional network of periodic dislocations wedge has a desired period.

Before the assembly of the two crystalline parts, it is possible to carry out an epitaxy from one of the crystalline parts, to change its nature but taking care to avoid the appearance of defects that could change the mesh parameter of the part crystalline. BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which:

FIG. 1A represents a structure according to the invention having two crystalline parts assembled and at the interface between the two crystalline parts a two-dimensional network of periodic dislocations wedge at desired period, their landmarks being flats, FIG. 1B showing the crystalline part provided with two opposite protractor markers instead of a flat one;

FIGS. 2A to 2E show various steps for obtaining two basic elementary structures that are part of the composition of the structure that is the subject of the invention;

FIGS. 3A to 3P are two examples of the various steps of treatment of a basic elementary structure aimed at stressing its crystalline part with a desired value;

FIGS. 4A to 4P represent two examples of different stages of treatment of a basic elementary structure aimed at compressively compressing its crystalline part by a desired value;

Figure 5 shows a sectional view of a structure object of the invention;

FIGS. 6A to 6P represent, alternatively, two examples of the different steps of treatment of a basic elementary structure aimed at to stress in tension its crystalline part of a desired value;

FIGS. 7A to 7P represent, in a variant, two examples of the different steps of treatment of a basic elementary structure aimed at compressively compressing its crystalline part by a desired value.

The arrows shown in the figures materialize the stress in tension or in compression and its intensity. For the sake of simplification, they are only shown during the first tensioning or compression sequences and during the additional sequences and not during the finishing sequences.

Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another.

The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.

DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS

With reference to FIG. 1A, a structure having a two-dimensional network of periodic dislocations which is the object of the invention with a chosen periodicity will be described.

This structure has a first elementary structure 1 assembled by direct bonding to a second elementary structure 2. The two-dimensional network of periodic dislocations coin referenced 10 appears at the bonding interface. The dislocation period was chosen.

Each of the elementary structures 1, 2 comprises a stack with a crystalline part 3, 4 having a connecting face 30, 40 and a final substrate 3.1, 4.1. The connecting faces will be visible in Figures 2D, 2E, 3H, 4H, 6H, 7H. As will be seen later, these connecting faces are advantageously derived from the same fracture plane, after possible reversals of the crystalline portions by means of handles.

The crystalline parts 3, 4 are made of the same material but moreover they come from the same crystal. This means that they have, before being processed, the same mesh parameter. At least one of the crystalline portions will be processed to change its mesh parameter to create a mesh parameter mismatch when assembling the bonding faces 30, 40 to obtain the two-dimensional network of periodic dislocations. corner period controlled, that is to say chosen.

To avoid the occurrence of a torsional disorientation, at least one mark 31, 34 is made on each of the crystalline portions 3, 4 before treatment, these two marks 31, 41 having the same orientation with respect to the crystalline lattice of the part crystalline 3, 4 which carries it. We will see later how to easily make these marks 31, 34 in using the fact that the two crystal parts 3, 4 are taken from the same crystal.

Taking the two crystal parts 3, 4 in the same crystal also eliminates bending disorientation, in fact the two initial free faces of the crystalline parts before treatment come from the same section plane in the crystal.

In the example of Figure 1A, the mark 31, 34 carried by each of the crystalline portions 3, 4 is a flat. Other types of markers are possible, as illustrated in FIG. 1B, which shows one of the connecting faces 30 of a crystalline part 3 before assembly, the two marks 31 which it bears take the form of two reporters provided with graduations. which follow its edge, this edge being rounded. These two rapporteurs are placed opposite each other. Instead of two rapporteurs, one could have used two straight graduated rules placed parallel or a complete graduated circle.

We will now describe an example of a method for obtaining two so-called basic elementary structures I ', 2', before one of them, at least, is treated at its crystalline part to change its parameter of mesh. Referring to FIGS. 2A,

We start from a semiconductor substrate on insulation 200 said starting. This starting substrate 200 comprises two layers of semiconductor material 20, 22 separated by a layer of insulating material 21. One of the layers of semiconductor material referenced 20 is thicker than the other referenced 22. Refer to Figure 2A. This starting substrate 200 may be a silicon on insulator substrate, the semiconductor material of the two layers 20, 22 being silicon. But of course besides silicon, the semiconductor material could be for example germanium, gallium nitride, silicon carbide, gallium arsenide, indium phosphide.

In the example described, as already mentioned, it is assumed that the semiconductor layer of the driver ^¬ thinner material 22 is a silicon film <001> of 1.5 micrometer thick and the layer of material insulator 21 is 400 nanometer thick silicon oxide. It is in this layer of semiconductor material the least thick 22 that we will take the crystalline parts.

In the thinner semiconductor material layer 22 of the starting substrate 200, an ion implantation, for example with hydrogen ions, is carried out at a dose 6.10 ¹⁶ at / cm ² , at an energy of 120 KeV from a face free of the layer of semiconductor material the least thick so-called implanted face 22.1. There is thus obtained a weakened zone 22.2 indicated by the crosses in FIG. 2A.

At least one common reference mark 300 is made in the thinnest semiconductor material layer 22 (FIG. 2B) of the initial substrate 200. If it is a protractor or a graduated ruler, it is made by lithography and etching so that the engraving reaches a depth greater than that the weakened zone 22.2 with respect to the implanted face 22.1. In the example the common identifier 300 is a complete reporter 180 mm in diameter, with graduations to the degree of 5/1000 formed on the edge of the starting substrate 200 on the side in the semiconductor material ^¬ finer conductor.

If we had wanted to make a flat it would have cut along a rope semiconductor substrate on insulator which is generally circular.

The order of the steps of implantation and realization of the marker can be reversed.

The implanted face 22.1 of the starting substrate 200 will then be brought onto a superficially oxidized material-semiconductor plate 40 (FIG. 2C). The oxide layer is referenced 41. The assembly is made between the oxide layer 41 and the implanted face 22.1 of the ^thinnest semi-conductive material layer 22.

The assembly can be a hydrophilic direct bonding. A chemical cleaning of the surfaces to be assembled is recommended as it was announced at the beginning.

The two-part separation 1 ', 2' of the structure illustrated in FIG. 2C is then brought about at the level of the weakened zone 22.2. This separation can be done by thermal annealing, in the example, at a temperature of about 500 ° C for about 1 hour. It could have been done separately or in combination mechanical treatment.

These two parts 1 ', 2' are also semiconductor substrates on insulator, they are illustrated in Figures 2D and 2E. They are the ones who will to form the two basic elementary structures mentioned above. They therefore each comprise a layer of insulating material 21, 41 buried between two layers of semiconductor material, one of the layers of semiconductor material 23, 43 being thinner than the other referenced 20, 40. It is the thinnest semiconductor material layer 23, 43 which will form the crystalline structure. The two crystalline structures 23, 43 come from the same crystalline block 22 which is the thinnest layer of the starting SOI 200. The two crystalline parts 23, 43 each carry at least one reference 31, 34 from the common reference frame 300 which was also split in two.

Optionally, one of the basic elementary structures 1 ', 2' may form an elementary structure to be assembled, if it is not desired to modify the mesh parameter of its crystalline part 23, 43.

However, it is preferable before they can be used as elementary basic structures to anneal them at high temperature, to thin and polish the thinnest semiconductor material layers 23, 43. Their thickness can be reduced to about 200 nanometers for example. Polishing provides a smoother surface finish than before.

We will now describe a first example of setting, for a predetermined value at a first reference temperature, the crystalline portion of one of the basic elementary structures illustrated in FIGS. 2D, 2E. The first reference temperature, is preferably a ambient temperature because it is the temperature at which we will use the crystalline portion stress-stressed. By ambient temperature is meant a temperature of between about 15 ° C and 25 ° C.

It is assumed that the basic basic structure 2 'illustrated in FIG. 2E will be dealt with, but it would have been possible to use the one illustrated in FIG. 2D.

Subsequently, each basic elementary structure 1 ', 2' comprises a stack with a crystalline portion 23, 43 and a source substrate 20 ', 40', the source substrate 20 ', 40', corresponding to the layer of semi material -conductor thicker and insulating layer 21, 41 of the semiconductor substrate on insulator. The face that has been polished is called the initial free face 23.1, 43.1.

A first sequence of steps of tensioning the crystalline portion 43 of the elementary basic structure 2 'will be carried out. The base elementary structure 2 'will be bonded to the initial free face 43.1 of the crystalline portion 43 on a target substrate 45 made of a material having a coefficient of thermal expansion less than that of the material of the source substrate 40' of the crystalline portion 43 If the source substrate 40 'is silicon, the material with a thermal expansion coefficient lower than that of the silicon may be fused silica. The bonding may be a direct bonding, that is to say a bonding by molecular adhesion without adhesive or adhesive bonding that will not flow during subsequent temperature changes. In the following description of Figures 3A to 3H, 4A to 4H 6A to 6H, 7A to 7H, there will be several collages, these collages may be collages corresponding to those described just above.

Bonding is carried out at a temperature above the first reference temperature, which in the example may be, for example, of the order of 350 ° C (Figure 3A). The crystalline portion 43, the target substrate 40 'and the target substrate 45 are expanded at the bonding temperature. Upon cooling after sticking, the crystalline portion 43 is partially prevented from contracting because the target substrate 45 is less dilated than the crystalline portion 43 and the target substrate 40 '. It is therefore partially constrained in tension at the first reference temperature.

The assembly obtained in FIG. 3A is then annealed, preferably at a temperature above the temperature of the previous bond, for about two hours. This first annealing can be done at about 500 ° C. Generally the annealing is at a temperature of at least 150 ° C higher than the bonding temperature. In the remainder of the description, the anneals will be at temperatures higher than those of bonding and will last about 2 hours, but this is only a non-limiting example. The annealing being followed by cooling, it has no effect on the tensile stress of the crystalline part when it is subjected to the first reference temperature. The source substrate 40 'is then removed, for example by lapping and etching. The chemical etching can be done with TMAH if the source substrate 40 'is silicon with a buried silicon oxide barrier layer. Another face 43.2 of the crystalline portion 43 is exposed, opposite to the initial free face 43.1 (FIG. 3B). With the removal of the source substrate 40 ', in the silicon example, the target substrate 45, in the silica example, then completely imposes its expansion on the crystalline part 43, in the silicon example, which confers on it even more stress in tension.

It is then possible to bond, on the other face 43.2, substantially to the first reference temperature, a target substrate 46 made of a material having a coefficient of thermal expansion greater than that of the target substrate material 45 bonded during the first bonding step. of the first sequence (Figure 3C). The material with a coefficient of thermal expansion greater than that of the target substrate material 45 may be germanium. This bonding does not affect the voltage stress of the crystalline portion 43 since it is at the first reference temperature.

After bonding, thermal annealing of the assembly illustrated in FIG. 3C is carried out at a temperature of the order of 200 ° C. for about two hours.

The crystalline portion 43 maintains its stress in tension at the first reference temperature. The target substrate 45 bonded is then removed during the first step of bonding the first sequence, for example by lapping and etching so as to expose the initial free face 43.1 of the crystalline portion 43 (Figure 3D). The crystalline portion 43 maintains its stress in tension at the first reference temperature. This voltage stress may be equal to or less than the predetermined voltage stress.

The etching can be done with hydrofluoric acid if the material with thermal expansion coefficient lower than that of the material of the crystalline part, is fused silica. The first sequence of tensioning steps is completed.

If the voltage stress obtained in FIG. 3D is equal to the predetermined voltage stress at the first reference temperature and the crystalline portion is bonded to a target substrate made of material having a coefficient of thermal expansion different from that of the crystalline part it may be necessary to carry out a finishing sequence to prevent the stress of the crystalline portion 43, which is the predetermined voltage stress, from changing with the temperature. During this finishing sequence, a target substrate 47 of material having a coefficient of thermal expansion substantially equal to that of the crystalline material at substantially the first reference temperature is adhered to the initial free face 43.1 of the crystalline portion 43 (FIG. 3E). The target substrate 46 is removed in the material with a thermal coefficient of expansion greater than that of the target substrate material 45 bonded during the first bonding step of the first sequence, so as to expose the other face 43.2 of the crystalline portion 43 (FIG. 3F) . Then, so that the initial free face is accessible 43.1, a target substrate 48 is glued on the other face 43.2 to a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at any temperature (FIG. 3G). The initial free face 43.1 of the crystalline portion 43 is exposed, this initial free face becoming a connecting face (FIG. 3H). During all these steps the crystalline portion 43 retains at the first reference temperature the predetermined voltage stress. By any temperature means a higher temperature, equal to or less than the reference temperature.

Indeed, not to unnecessarily multiply the number of figures, it is assumed that Figures 3E to 3H also illustrate the steps of an additional sequence of tensioning. During this finishing sequence, annealing is expected after each bonding. In addition, the steps of withdrawal or stripping can be done as described in Figures 3B and 3D. The arrows materializing the constraint concern the additional steps.

If the voltage stress at the first reference temperature obtained in FIG. 3 is smaller than the predetermined voltage stress, then performs one or more additional power-up sequences.

In each additional sequence of tensioning, a target substrate 47 'is glued to the initial free face 43.1 of the crystalline portion 43, at a temperature higher than the first reference temperature (FIG. 3E). In fact, the gluing step illustrated in FIG. 3A is repeated. This target substrate 47 'is in a material having a coefficient of thermal expansion less than that of the target substrate 46 material stuck on the other face 43.1 of the crystalline portion 43 during the second bonding step of the previous sequence.

The bonding temperature may be of the order of 350 ° C. After the bonding, when the crystalline portion 43 has returned to the first reference temperature, it has a tension stress increased compared to that it had before bonding. But this voltage constraint is only partial compared to that it will have at the end of the additional sequence of tensioning in progress. Thermal annealing of the assembly illustrated in FIG. 3E is carried out at a temperature of the order of 500 ° C. for approximately 2 hours.

The additional tensioning sequence is continued by a step of removal, by etching and etching, for example, of the target substrate 46 bonded to the other side of the crystalline part, during the second bonding step of the previous sequence illustrated in FIG. 3C, so as to expose the other face 43.2 of the part crystalline 43 (Figure 3F). The crystalline portion acquires an increased stress stress since the target substrate 47 'completely imposes its expansion on the crystalline portion. This voltage stress is the one that it will have at the end of the additional sequence of tensioning in progress. The etching can be done with a mixture of water / hydrogen peroxide, ammonia at about 70 ° C if the target substrate 46 is germanium. The additional tensioning sequence can be continued by repetition of the bonding step illustrated in FIG. 3C, that is to say the bonding on the other face 43.2 of a target substrate 48 'made of a material having a coefficient of thermal expansion greater than that of the target substrate material 47 'bonded to the crystalline portion 43 at the first step of bonding the additional sequence in progress (Figure 3E), substantially at the first reference temperature.

The material with a thermal expansion coefficient greater than that of the target substrate material 47 'bonded to the crystalline portion 43 at the first bonding step of the current sequence may be germanium. This bonding does not affect the tensile stress of the crystalline part. This bonding is followed by annealing as described previously.

As a variant, and in particular during the last additional tensioning sequence, it is possible, instead of repeating the step of bonding the target substrate 48 'to a material having a coefficient of thermal expansion greater than that of the material of the target substrate 47 'bonded to the crystalline portion 43 in the first bonding step of the additional sequence in progress, to perform a bonding step on the other face 43.2, a target substrate 48''of material having a coefficient of thermal expansion substantially equal to that of the crystalline part 43, at the first reference temperature (FIG. 3G). Preferably, this substrate 48 '' is in the same material as the crystalline part 43, in the example described it is silicon.

The crystalline portion 43 retains at the first reference temperature, the voltage stress acquired at the end of the removal step illustrated in Figure 3F.

The step illustrated in FIG. 3D is repeated by then removing the target substrate 47 'bonded to the crystalline portion 43 at the first step of bonding the additional sequence in progress, for example by grounding and etching so as to expose the initial free face 43.1 of the crystalline portion 43 (FIG. 3H). The crystalline portion 43 retains the increased tension stress, at the first reference temperature, acquired at the conclusion of the removal step illustrated in FIG. 3F. This voltage stress may be equal to or less than the predetermined voltage stress.

The additional voltage sequence is repeated until the crystalline portion has reached the predetermined voltage stress at the first reference temperature. During each additional power-up sequence, provision is made anneals after each collage. In addition, the steps of withdrawal or stripping can be done as described in Figures 3B and 3D.

The crystalline portion 43 having the predetermined voltage stress at the first reference temperature has a mesh parameter which is different from that in FIG. 2E. Thus, a treated elementary structure 49 has been obtained. It is assumed that in the method which has just been described with the realization of the first voltage setting sequence followed by a single additional voltage setting sequence according to the variant described, the bonding face is subjected to a voltage stress of about +700 MPa. If the additional voltage sequence had been carried out twice in succession, the voltage stress would have been larger in absolute value. The difference between the first reference temperature and the temperature above the first reference temperature, the target substrate materials and the number of voltage sequences are chosen to obtain the predetermined voltage stress at the first reference temperature.

In a variant, to impose a predetermined tension stress on the crystalline part, it is possible to carry out a first tensioning sequence in which the basic elementary structure 2 'is glued by the initial free face 43.1 of the crystalline part 43 on a substrate target 45.1 in a material having a coefficient of thermal expansion greater than that of the material of the source substrate 40 ', this bonding is done at a temperature substantially equal to the first reference temperature (Figure 31). If the source substrate 40 'is silicon, the material with a thermal coefficient of expansion greater than that of the source substrate 40' may be germanium. The crystalline portion 43 and the target substrate 45.1 are not dilated at the bonding temperature. As before, thermal annealing is performed after bonding.

The source substrate 40 'is then removed so as to expose the other face 43.2 of the crystalline portion 43, opposite to the initial free face 43.1 (FIG. 3J)

Next, on the other face 43.2, at a temperature higher than the first reference temperature, a target substrate 46.1 of a material having a coefficient of thermal expansion smaller than that of the material of the target substrate 45.1 bonded during the first step collage of the current sequence (Figure 3K). The bonding is done hot, the crystalline portion 43 and the target substrate 46.1 are expanded. The expansion of the crystalline part is increased because of its prior bonding on the target substrate 45.1 in material having a coefficient of thermal expansion greater than its own. But during the cooling after the bonding and the return to the first reference temperature, the crystalline portion 43 is partially prevented from contracting as much as it would like, since the target substrate 46.1 which has just been bonded prevents it. . She is therefore partially voltage-stressed at the first reference temperature.

The target substrate 45.1 which is glued during the first gluing step of the first sequence is then removed (FIG. 3L).

After removal of the target substrate 45.1 the crystalline portion 43 is then completely voltage-strained by the target substrate 46.1 which supports it. This step illustrated in FIG. 3L is the last of the current power-up sequence. This voltage stress may be equal to or less than the predetermined voltage stress.

If the voltage stress obtained in FIG. 3L is equal to the voltage stress predetermined at the first reference temperature, it may be necessary to carry out a finishing sequence as described previously.

On the initial free face 43.1 of the crystalline portion 43, a target substrate 47.1 of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part 43 at the first reference temperature (FIG. 3M) is adhered to. The target substrate 46.1 is removed from the material having a coefficient of thermal expansion less than that of the material of the target substrate 45.1 bonded during the first bonding step of the preceding sequence so as to expose the other face 43.2 of the part crystalline 43 (Figure 3N). A target substrate 48.1 is bonded to the other face 43.2 in a material having a coefficient of thermal expansion substantially equal to that of the material of the part crystalline at any temperature (Figure 30). The initial free face 43.1 of the crystalline portion 43 is exposed, this initial free face becoming a connecting face (FIG. 3P). During all these steps the crystalline portion 43 retains, at the first reference temperature, the predetermined voltage stress. In order not to unnecessarily multiply the number of figures, it is assumed that FIGS. 3M-3P also illustrate the steps of an additional power-up sequence. During this finishing sequence, annealing is expected after each bonding. In addition the removal or stripping steps can be done as described in Figures 3J and 3L.

In the same way as in the first example of voltageing, if the voltage stress at the first reference temperature obtained in FIG. 3L is less than the predetermined voltage constraint, one or more additional voltage-setting sequences are carried out. .

In each additional sequence of tensioning, a target substrate 47.1 'is bonded to the initial free face 43.1 of the crystalline portion 43 at a temperature substantially equal to the first reference temperature (FIG. 3M). In fact, the bonding step illustrated in FIG. 31 is repeated. This target substrate 47.1 'is in a material having a thermal expansion coefficient greater than that of the target substrate 46.1 material stuck on the other face 43.1 of the crystalline part. 43 during the second bonding step of the previous sequence. The crystalline portion is not stress-stressed in an increased manner. Thermal annealing of the assembly illustrated in FIG. 3L is carried out at a temperature of about 500 ° C. for about 2 hours.

The additional tensioning sequence is continued by a step of removing the target substrate 46.1 stuck on the other face 43.2 of the crystalline portion 43, so as to expose the other face 43.2 of the crystalline portion 43 (FIG. 3N ).

The additional sequence of tensioning can be continued by the reiteration of the bonding step illustrated in FIG. 3K, that is to say the bonding on the other face 43.2 of the crystalline part 43 of a target substrate 48.1 ' in a material having a coefficient of thermal expansion less than that of the target substrate material 47.1 'bonded to the crystalline portion 43 during the first step of bonding the current sequence, to a temperature higher than the first reference temperature (FIG. 30) . It is during the cooling and return to the first reference temperature that the crystalline portion 43 acquires an increased tension stress compared to that which it had before hot gluing. But this constraint in increased tension is only partial. The crystalline part will obtain all its stress in tension at the end of the last step of the additional tensioning sequence as will be seen later.

As a variant, and especially during the last additional tensioning sequence, it it is possible, instead of repeating the step of sticking a target substrate in a material having a coefficient of thermal expansion less than that of the target substrate 47.1 'stuck on the initial free face 43.1 at a temperature above the first temperature of reference, to perform a bonding step on the other face 43.2 of a target substrate 48.1 '' of material having a coefficient of thermal expansion substantially equal to that of the crystalline portion 43, at a temperature above the first temperature of reference. Preferably, this substrate 48.1 '' is in the same material as the crystalline part 43, in the example described it is silicon. The variation of the voltage stress with the temperature will then be prevented after the subsequent removal of the target substrate 47.1 'bonded to the initial free face 43.1 of the crystalline portion 43.

The step illustrated in FIG. 3L is repeated by then removing the target substrate 47.1 bonded to the first bonding step of the additional sequence in progress, for example by honing and chemical etching so as to expose the initial free face 43.1 of FIG. the crystalline portion 43 (Figure 3P). The crystalline portion 43 obtains its increased stress stress at the first reference temperature. This voltage stress may be equal to or less than the predetermined voltage stress.

The additional voltage sequence is repeated until the crystalline portion has reached the predetermined voltage stress at the first reference temperature. At each additional sequence of tensioning, annealing is provided after each bonding. In addition, the steps of withdrawal or stripping can be done as described in Figures 3B and 3D.

Reference will now be made with reference to FIGS. 4A to 41 how to obtain a crystalline portion constrained in compression from a predetermined value to a second reference temperature. The second reference temperature is preferably an ambient temperature. This can be done from the basic elementary structure shown in Figure 2D.

A first sequence of steps of compressing the crystalline portion 23 will be started. The basic elemental structure 1 'will be bonded by the initial free face 23.1 of the crystalline part 23 on a target substrate 60 made of a material having a thermal expansion coefficient greater than that of the source substrate material 20 'of the crystalline portion 23. If the source substrate 20' of the crystalline portion 23 is silicon, the thermal coefficient of expansion material greater than that of the source substrate can be Germanium.

Bonding is carried out at a temperature higher than the second reference temperature, which in the example may for example be of the order of 350 ° C. (FIG. 4A). During the heating, the target substrate and the crystalline part have expanded and during the cooling which follows, the target substrate 60 will impose a partial compressive stress on the crystalline part 23 at the second reference temperature. The assembly obtained in FIG. 4A is then annealed at a temperature of about 500 ° C. for about 2 hours. The annealing has no influence on the compressive stress of the crystalline portion once it has returned to the second reference temperature.

The source substrate 20 'is then removed, for example by lapping and etching. Etching can be done with TMAH if the source substrate 20 'is silicon and silicon oxide. One exposes another face 23.2 of the crystalline part 23, opposite to the initial free face 23.1 (FIG. 4B). With the removal of the source substrate 20 ', the target substrate 60 completely imposes its compressive stress on the crystalline part 23. The crystalline part 23 has a greater compressive stress than before the withdrawal of the source substrate 20' at the second temperature reference.

The other face 23.2 is then bonded, at substantially the second reference temperature, to a target substrate 61 made of a material having a coefficient of thermal expansion less than that of the target substrate material 60 bonded during the first bonding step of FIG. the current sequence (Figure 4C). The material with a coefficient of thermal expansion less than that of the target substrate material 60 may be fused silica. The crystalline portion 23 retains its compressive stress at the second reference temperature.

After bonding, thermal annealing of the assembly illustrated in FIG. temperature of about 300 ° C for about 2 hours.

The target substrate 60 bonded onto the initial free face 23.1 is then removed during the first step of bonding the current sequence, for example by lapping and etching, so as to expose the initial free face 23.1 of the crystalline part. (Figure 4D). The crystalline portion 23 retains its compressive stress at the second reference temperature, this compression stress having been obtained at the end of the removal step illustrated in FIG. 4B. This compressive stress may be less than or equal to the predetermined compressive stress at the second reference temperature.

The etching can be done with a mixture of water / hydrogen peroxide / ammonia at about 70 ° C if the target substrate 60 to be removed is germanium.

If the compressive stress obtained in FIG. 4D is equal to the predetermined compressive stress at the second reference temperature and the crystalline portion is bonded to a target substrate 61 made of a material with a coefficient of thermal expansion different from that of that of the crystalline portion 23, it may be necessary to carry out a finishing sequence to prevent the compressive stress of the crystalline portion 23, which is the predetermined compressive stress, changing with temperature. During this finishing sequence, a target substrate 62 is bonded to the initial free face 23.1 of the crystalline portion 23. a coefficient of thermal expansion substantially equal to that of the material of the crystalline part 23 at the second reference temperature (FIG. 4E), the target substrate 61 is removed from the material with a thermal coefficient of thermal expansion different from that of the material of the crystalline part 23, so as to expose the other face 23.2 of the crystalline part 23 (FIG. 4F), a target substrate 63 of a material having a coefficient of thermal expansion substantially equal to that of the material is glued to the other face 23.2. of the crystalline part 23, at any temperature (FIG. 4G), the initial free face 23.1 of the crystalline part 23 is exposed, this initial free face 23.1 becoming a connecting face (FIG. 4H). During all these steps the crystalline portion 23 retains at the second reference temperature, the predetermined compressive stress. The arrows shown on the crystalline portion 23 do not relate to this finishing sequence but the additional tensioning sequence described below. Indeed, not to unnecessarily multiply the number of figures, it is assumed that Figures 4E to 4H also illustrate the steps of an additional sequence of compression. During this finishing sequence, annealing is expected after each bonding. In addition the removal or stripping steps can be done as described in Figures 4B and 4D.

If the compressive stress at the second reference temperature obtained in FIG. 4D is less than the compressive stress predetermined, one or more additional compression sequences are performed.

In each additional compression sequence, a target substrate 62 'is bonded to the initial free face 23.1 of the crystalline portion 23 at a temperature higher than the second reference temperature (FIG. 4E). In fact we repeat the bonding step illustrated in Figure 4A. This target substrate 62 'is in a material having a coefficient of thermal expansion greater than that of the target substrate material 61 bonded to the other face 23.1 of the crystalline part 23 during the second bonding step of the preceding sequence (FIG. ). This bonding temperature can be about 350 ° C. After bonding, when the crystalline portion has returned to the second reference temperature, it has an increased compressive stress compared to that before bonding. But this constraint in compression is only partial compared to that it will have at the end of the additional sequence in progress. Thermal annealing of the assembly illustrated in FIG. 4E is carried out at a temperature of the order of 500 ° C. for approximately 2 hours.

The additional sequence of compression is continued by a step of removal, by lapping and etching, of the target substrate 61 bonded to the other face 23.2 of the crystalline part 23 during the second bonding step of the preceding sequence, in order to expose the other face 23.2 of the crystalline part 23 (FIG. 4F). At the end of this removal step, the crystalline portion 23 has an increased compressive stress which it will retain until the end of the additional sequence of compression in progress. Etching can be done with hydrofluoric acid if the material of the target substrate 61 to be removed is silica.

The additional sequence of compression can be done by the reiteration of the bonding step illustrated in FIG. 4C, that is to say the bonding on the other face 23.2 of a target substrate 63 'made of a material having a coefficient of thermal expansion less than that of the target substrate material 62 'bonded to the crystalline portion 23 at the first bonding step of the current sequence, at substantially the second reference temperature (Figure 4G). The target substrate material 63 'may be fused silica. This bonding does not affect the compressive stress of the crystalline portion 23. This bonding is followed by annealing as described above.

As a variant, and in particular during the last additional compression sequence, it is possible instead of repeating the step of bonding a target substrate into a material having a thermal expansion coefficient lower than that of the target substrate material. bonded to the crystalline part at the first bonding step of the current sequence, performing a bonding step on the other face 23.2 of a target substrate 63 '' of material having a coefficient of thermal expansion substantially equal to that of the crystalline portion 23, at the second reference temperature. Preferably, this substrate 63 "is in the same material as the crystalline portion 23, in the example described it is silicon. The variation of the compressive stress with the temperature will then be prevented after the removal of the target substrate 62 bonded to the first bonding step of the current sequence.

The crystalline part 23 retains at the second reference temperature, the compressive stress acquired at the end of the removal step illustrated in FIG. 4F.

The step described in FIG. 4D is repeated by then removing the target substrate 62 bonded to the crystalline part during the first step of bonding the current sequence, for example by lapping and etching, so as to expose the initial free face 23.1 of the crystalline portion 23 (Figure 4H). The crystalline portion 23 retains its increased compressive stress at the second reference temperature. This compressive stress may be equal to or less than the predetermined compressive stress.

The additional compression sequence is repeated until the crystalline portion has reached the predetermined compressive stress at the second reference temperature. During each additional sequence of compression, annealing is provided after each bonding. In addition, the steps of removal or stripping can be done as described in Figures 4B and 4D. The crystalline portion 23 having the predetermined compressive stress at the second reference temperature has a mesh parameter which is different from that in FIG. 2D. Thus, a treated elementary structure 65 has been obtained. It is assumed that in the method just described with the realization of the first compression sequence followed by a single additional compression sequence according to the variant described, the bonding face is subjected to a compressive stress of about -500 MPa. Had the additional compression sequence been carried out twice in succession, the compressive stress would have been greater in absolute value. The difference between the second reference temperature and the temperature above the second reference temperature, the target substrate materials and the number of voltage sequences are chosen to obtain the predetermined compressive stress at the second reference temperature.

Alternatively, in order to impose a predetermined compressive stress on the crystalline part 23, a first compression sequence can be carried out in which the basic elemental structure 1 'is bonded by the initial free face 23.1 of the crystalline part 23, on a target substrate 60.1 made of a material having a coefficient of thermal expansion less than that of the source substrate material 20 ', this bonding being done at a temperature substantially equal to the second reference temperature (FIG. 41). If the crystalline part 23 is in silicon, the material with a thermal coefficient of expansion less than that of the silicon source substrate may be silica. The crystalline portion 23 and the target substrate 60.1 are not dilated at the bonding temperature. As before, thermal annealing is performed after bonding.

The source substrate 20 'is then removed so as to expose the other face 23.2 of the crystalline portion 23, opposite to the initial free face 23.1 (FIG. 4J).

Then, on the other side 23.2, at a temperature higher than the second reference temperature, a target substrate 61.1 is bonded in a material having a coefficient of thermal expansion greater than that of the material of the target substrate 60.1 bonded to the crystalline part during the first step of sticking the current sequence (Figure 4K). The bonding is done hot, the crystalline portion 23 and the target substrate 61.1 are expanded. The expansion of the crystalline portion 23 is limited because of its prior bonding on the target substrate 60.1 material having a coefficient of thermal expansion less than that of the source substrate material 20 '. But during the cooling which follows the bonding and the return to the second reference temperature, the crystalline portion 23 is forced to contract more than it would like, since the target substrate 61.1 in material having a coefficient of thermal expansion greater than its own. leads to compression. It is therefore constrained in compression partially at the second reference temperature. The glued target substrate 60.1 is then removed during the first gluing step of the first compression sequence (FIG. 4L) exposing the initial free face 23.1 of the crystalline portion 23. As in the previous example, the part crystalline 23 then acquires all its compressive stress at the second reference temperature. This compressive stress may be equal to or less than the predetermined compressive stress.

If the compressive stress obtained in FIG. 4L is equal to the predetermined compressive stress at the second reference temperature and the crystalline part is bonded to a target substrate made of material having a coefficient of thermal expansion different from that of the crystalline part it may be necessary to perform a finishing sequence as previously described.

On the initial free face 23.1 of the crystalline portion 23, a target substrate 62.1 of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part 23, substantially at the second reference temperature (FIG. 4M) is adhered to.

The target substrate 61.1 is removed from the material having a coefficient of thermal expansion different from that of the material of the crystalline part 23 so as to expose the other face 23.2 of the crystalline part 23 (FIG. 4N). On the other side 23.2, a target substrate 63.1 is glued in a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part 23, at any temperature (FIG. 40). The initial free face 23.1 of the crystalline portion 23 is exposed, this initial free face becoming a connecting face (FIG. 4P). During all these steps, the crystalline portion 23 retains at the second reference temperature the predetermined compressive stress acquired during the last step of removing the first compression sequence. In order not to unnecessarily multiply the number of figures, it is assumed that FIGS. 4M-4P also illustrate the steps of an additional compression sequence. During this finishing sequence, annealing is expected after each bonding. In addition, the steps of withdrawal or stripping can be done as described in Figures 4J and 4L.

In the same way as in the first compression example, if the compressive stress at the second reference temperature obtained in FIG. 4L is less than the predetermined compressive stress, one or more additional compression sequences are carried out. .

In each additional compression sequence, a target substrate 62.1 'is bonded to the initial free face 23.1 of the crystalline portion 23 at a temperature substantially equal to the second reference temperature (FIG. 4M). In fact, the bonding step illustrated in FIG. 41 is repeated. This target substrate 62.1 'is in a material having a coefficient of thermal expansion less than that of target substrate material 61.1 glued on the other face 23.1 of the crystalline portion 23 during the second bonding step of the previous sequence. The crystalline portion 23 is not constrained in increased compression.

Thermal annealing of the assembly illustrated in FIG. 4M is carried out at a temperature of about 500 ° C. for about 2 hours.

The additional sequence of compression is continued by a step of removal, by lapping and etching, of the target substrate 61.1 bonded to the other face 23.2 of the crystalline portion 23 during the second bonding step of the preceding sequence, in order to expose the other face 23.2 of the crystalline part 23 (FIG. 4N).

The additional sequence of compression can be continued by the reiteration of the bonding step illustrated in FIG. 4K, that is to say the bonding of a target substrate 63.1 'of a material having a coefficient of thermal expansion greater than that of the material of the target substrate 62.1 'bonded to the crystalline part 23 at the first bonding step of the current sequence, at a temperature higher than the second reference temperature (FIG. 40). It is during the cooling and return to the second reference temperature that the crystalline portion 23 acquires an increased compressive stress compared to that which it had before the hot bonding and before the removal of the target substrate 61.1 from the step 4M. But this constraint in increased compression is only partial. It is only after the step of removing the target substrate 62.1 'that the crystalline portion will obtain its full compressive stress for the additional compression-in-progress sequence as described later in Figure 4P.

This bonding is followed by annealing as described previously.

As a variant, and especially during the last additional compression sequence, it is possible, instead of performing the step of bonding a target substrate 63.1 'to a material having a coefficient of thermal expansion greater than that of the material from the target substrate bonded to the crystalline part at the first bonding step of the current sequence, to perform a bonding step on the other face 23.2, of a target substrate 63.1 '' made of a material having a coefficient of thermal expansion substantially equal to that of the crystalline part 23, at a temperature higher than the second reference temperature. Preferably, this substrate 63.1 '' is in the same material as the crystalline part 23, in the example described it is silicon. The variation of the compressive stress with the temperature after removal of the target substrate 62.1 'bonded to the first bonding step of the current sequence will then be prevented. The crystalline portion 23 retains at the second reference temperature, the compressive stress acquired in Figure 4L.

The step described in FIG. 4L is repeated by then removing the target substrate 62.1 'bonded to the crystalline part during the first bonding step of the current sequence, for example by lapping and etching, so as to expose the initial free face 23.1 of the crystalline portion 23 (Figure 4P). The crystalline portion 23 retains its increased compressive stress at the second reference temperature. This compressive stress may be equal to or less than the predetermined compressive stress.

The additional compression sequence is repeated until the crystalline portion has reached the predetermined compressive stress at the second reference temperature. During each additional sequence of compression, annealing is provided after each bonding. In addition, the steps of withdrawal or stripping can be done as described in Figures 4J and 4L.

The bonding faces of the crystalline parts are then prepared for their assembly. We can choose to assemble the crystalline part obtained in FIG. 3H with the crystalline part obtained in FIG. 4H or else the crystalline part obtained in FIG. 3H with the crystalline part obtained in FIG. 2D or the crystalline part obtained at the Figure 4H with the crystalline portion obtained in Figure 2E.

It is possible to carry out epitaxy from at least one of the crystalline parts to be assembled, in order to change their nature, while taking care to avoid the appearance of defects that could modify the mesh parameter of the crystalline part. According to the epitaxial material, its thickness will be limited to keep its mesh parameter. Of course, if this mesh parameter is the natural mesh parameter of the epitaxial material, there is no limit in thickness because no stress will be present in the epitaxial material. The more the mesh parameter of the epitaxial material is different from that of the crystalline part on which will grow, the more it will be necessary to reduce the thickness of epitaxial material to avoid the appearance of crystalline defects.

If one chooses to do a hydrophobic bonding, which is preferable because one wishes to avoid the formation of an interfacial oxide which would harm the crystalline contact, one seeks that the connecting faces are free of native oxide and that the it is in the presence of H + ions. A hydrofluoric acid solution can be used for the preparation.

If one chooses to make a hydrophilic bonding, it will be necessary to provide a special annealing to remove the native oxide that will form at the interface.

The hydrophobic bonding is carried out at ambient temperature by optimally aligning the marks carried by each of the crystalline parts. With pointers of the type protractor, the accuracy can be of the order of plus or minus 0, 005 °. Referring to Figure 5 which shows the assembly obtained after bonding the treated elemental structure 49 obtained in Figure 3H with the treated elementary structure 65 obtained in Figure 4H by the bonding faces of their crystalline portions. This alignment eliminates disorientation by flexion and torsion. We are therefore in the presence of a disagreement of mesh parameters.

At the bonding interface, we are thus in the presence of a periodic network of three-dimensional dislocations coin whose period was chosen.

The crystalline portion 43 of Figure 3H with a voltage stress of about +700 MPa has a larger mesh parameter of about 0.4% than the crystalline portion of Figure 2E. In the example described, the crystalline portion of FIG. 2E is standard monocrystalline silicon.

The crystalline portion 23 of FIG. 4H with a compressive stress of about -500 MPa has a smaller mesh size of about 0.3% than the crystalline portion of FIG. 2D. In the example described, this crystalline part is made of standard monocrystalline silicon.

There is therefore a difference of about 0.7% mesh parameter between the crystalline portions of Figures 3H and 4H. The period of the periodic array of two-dimensional corner dislocations will be about 56 nanometers.

It would of course have been possible to assemble the elementary basic structure 1 'to the treated elementary structure 49 or the elementary basic structure 2' to the treated elementary structure 65. Other variants are still possible.

It is possible to avoid using many different materials and in particular a target substrate made of a material with a coefficient of thermal expansion greater than that of the material of the part crystalline. This is interesting when this target substrate is germanium because it is expensive material.

Another example of setting, for a predetermined value at a third reference temperature, the crystalline portion of one of the basic elementary structures illustrated in FIGS. 2D, 2E will now be described. The third reference temperature is preferably an ambient temperature. It is assumed that the basic basic structure illustrated in Figure 2E is addressed.

A first sequence of steps of tensioning of the crystalline part of the elementary basic structure 2 'is effected. The basic elemental structure 2 'is bonded by the initial free face 43.1 of the crystalline portion 43 to a target substrate 55 made of a material having a coefficient of thermal expansion less than that of the material of the crystalline part 43. If the crystalline part 43 is made of silicon, the material with a thermal expansion coefficient lower than that of silicon may be fused silica.

The bonding is carried out at a temperature higher than the third reference temperature (FIG. 6A). This temperature may be of the order of 350 ° C. The crystalline part and the target substrate are dilated at this bonding temperature. During cooling after sticking, the crystalline part can not contract because the target substrate 55 prevents it since it has less dilated than the crystalline part. It is therefore partially voltage stress at the third reference temperature.

The assembly obtained in FIG. 6A is then annealed at a temperature of about 500 ° C. for about 2 hours. As indicated in the description of FIG. 3, the annealing has no effect on the stress of the crystalline part when it is subjected to the third reference temperature.

The source substrate 40 'is then removed, for example by lapping and etching. The chemical etching can be done with TMAH if the source substrate 40 'is silicon with a buried silicon oxide barrier layer. The other face 43.2 of the crystalline portion 43 is exposed, opposite to the initial free face 43.1 (FIG. 6B). After removal of the source substrate 40 ', the crystalline portion is fully voltage-stressed for this voltage sequence. The stress in tension is about +170 MPa.

Next, a bonding step is carried out on the other face 43.2, at a temperature substantially equal to the third reference temperature, of a target substrate 56 made of a material having substantially the same coefficient of thermal expansion as that of the substrate material. the crystalline portion 43 (Figure 6C). The material having substantially the same coefficient of thermal expansion as that of the crystalline portion 43 may be silicon as well as the crystalline portion. The crystalline portion 43 retains the voltage stress acquired after removal of the source substrate 40 '. After this collage, we make a thermal annealing of the assembly illustrated in Figure 6C, at a temperature of about 200 ° C for about two hours. The crystalline portion 43 retains its voltage stress acquired after removal of the source substrate 40 '.

The target substrate 55 is then removed from a material with a coefficient of thermal expansion that is less than that of the material of the crystalline portion 43, for example by lapping and etching so as to expose the initial free face 43.1 of the crystalline part (FIG. 6D). The crystalline portion 43 retains its voltage stress acquired after removal of the source substrate 40 'as shown in FIG. 6B.

The etching can be done with hydrofluoric acid if the material with thermal expansion coefficient lower than that of the material of the crystalline part is fused silica.

If the crystalline portion 43 illustrated in FIG. 6D has acquired a voltage stress equal to the predetermined voltage stress at the third reference temperature, one of the structures to be assembled has been obtained. The tension stress of the crystalline part will not change with temperature variations since the crystalline part is bonded to a target substrate made of a material with a coefficient of thermal expansion substantially equal to that of the crystalline part.

If the voltage stress of the crystalline portion 43 acquired at the end of the first tensioning sequence is less than the predetermined voltage constraint, one can repeat one or more times an additional sequence of tensioning.

In each additional tensioning sequence, the step illustrated in FIG. 6A, of bonding on the initial free face 43.1 of a target substrate 57, is reiterated in a material with a coefficient of thermal expansion less than that of the material of the part. crystalline 43 at a temperature above the third reference temperature (Figure 6E). This temperature may be of the order of 350 ° C. After bonding, when the crystalline portion 43 has returned to the third reference temperature, it has an increased tension stress compared to that it had before bonding but partial compared to that it will have at the end of the sequence being put in tension. Thermal annealing of the assembly illustrated in FIG. 6E is carried out at a temperature of the order of 500 ° C. for approximately 2 hours. The additional tensioning sequence is continued by a step of withdrawal by etching and chemical etching of the target substrate 56 of material with a coefficient of thermal expansion substantially equal to that of the material of the crystalline part 43 so as to expose the other 43.2 of the crystalline portion 43 (Figure 6F). Chemical etching can be done with TMAH if the material is silicon.

At the end of this removal step, the crystalline portion acquires a full voltage stress for the additional sequence in progress. The sequence of the hot-bonding step and the shrinkage brings an additional tensile stress of about + 170 MPa to the crystalline part. With a temperature of the order of 200 ° C. instead of 350 ° C., an additional tension stress of about +85 MPa would have been obtained instead of about +170 MPa.

The additional tensioning sequence continues with the reiteration of the step illustrated in FIG. 6C, which is a step of bonding, on the other face 43.2, a target substrate 58 made of a material having substantially the same coefficient of thermal expansion that of the material of the crystalline portion 43 (Figure 6G) at a temperature substantially equal to the third reference temperature. The material having substantially the same coefficient of thermal expansion as that of the crystalline portion 43 may be silicon as well as the crystalline portion. This bonding has no influence on the tensile stress of the crystalline part acquired at the end of the removal step illustrated in FIG. 6F. The sequence also comprises the reiteration of the step 6D for removing the target substrate 57 from a material with a coefficient of thermal expansion that is less than that of the material of the crystalline part 43, for example by lapping and etching so as to expose the face initial free 43.1 of the crystalline portion 43 (Figure 6H).

The crystalline part retains at the third reference temperature the increased tension stress acquired in FIG. 6F. This constraint which may be equal to or less than the predetermined voltage stress at the third reference temperature. The additional voltage sequence is repeated until the crystalline portion has reached the predetermined voltage stress at the third reference temperature. During each additional sequence of tensioning, annealing is provided after each bonding. In addition, the removal or stripping steps can be done as described in FIGS. 6B and 6D.

The crystalline portion 43 having the predetermined voltage stress at the third reference temperature has a mesh parameter which is different from that in FIG. 2E. Thus, a treated elemental structure 59 has been obtained. The difference between the third reference temperature and the temperature above the third reference temperature, the target substrate materials and the number of tensioning sequences are chosen to obtain the stress. predetermined voltage at the third reference temperature.

Alternatively, as already explained in FIG. 3, the basic elementary structure 2 'could be bonded to the initial free face 43.1 of the crystalline part 43 on a target substrate 55.1 made of a material having a higher coefficient of thermal expansion. that of the material of the crystalline portion 43, at a temperature substantially equal to the third reference temperature (Figure 61). The crystalline portion 43 and the target substrate 55.1 are not dilated at the bonding temperature. Then remove the source substrate 40 'exposing the other face of 43.2 of the crystalline portion 43 (Figure 6J).

A bonding step is carried out on the other face 43.2, at a temperature above the third reference temperature, of a target substrate 56.1 made of a material having substantially the same coefficient of thermal expansion as that of the material of the crystalline part. 43 (Figure 6K).

The bonding is done hot, the crystalline portion 43 and the target substrate 56.1 are expanded. The expansion of the crystalline portion 43 is increased because of its prior bonding on the target substrate 55.1 in material having a coefficient of thermal expansion greater than its own. But during the cooling which follows the bonding and the return to the third reference temperature, the crystalline portion 43 is partially prevented from contracting as much as it would like, since the target substrate 56.1 made of a material having a substantially equal coefficient of thermal expansion to his own prevents him. It is therefore partially constrained in voltage at the third reference temperature.

The target substrate 55.1 is then removed from a material with a coefficient of thermal expansion greater than that of the material of the crystalline portion 43 (FIG. 6L). At the end of this withdrawal, the crystalline part 43 then acquires a full voltage stress corresponding to the voltage setting sequence at the third reference temperature.

If the crystalline portion 43 illustrated in FIG. 6L has acquired a voltage stress equal to the predetermined voltage stress at the third reference temperature, one of the structures to be assembled was obtained.

If the voltage stress of the crystalline portion at the third reference temperature is less than the predetermined voltage stress, one or more times can be repeated one additional voltage sequence.

In each additional tensioning sequence the step illustrated in FIG. 61 is repeated, of bonding on the initial free face 43.1 of a target substrate 57.1 in a material with a coefficient of thermal expansion greater than that of the material of the crystalline part. 43 at a temperature substantially equal to the third reference temperature (FIG. 6M). The additional tensioning sequence continues with a step of removing the target substrate

56.1 in material with a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion 43 so as to expose the other side

43.2 of the crystalline portion 43 (Figure 6N). The additional tensioning sequence is continued by reiterating the step illustrated in FIG. 6K, then sticking, on the other face 43.2, a target substrate 58.1 made of a material having substantially the same coefficient of thermal expansion as that of the material of the crystalline portion 43 (Figure 60) at a temperature above the third reference temperature. It is after this bonding step, when the structure is returned to the third reference temperature that the crystalline portion 43 has an increased tension stress. The sequence also comprises the reiteration of the step 6L for removing the target substrate 57.1 in material having a coefficient of thermal expansion greater than that of the material of the crystalline portion 43 (FIG. 6P).

The crystalline portion retains at the third reference temperature the increased voltage stress acquired after FIG. 6M. This increased stress may be equal to or less than the predetermined voltage stress at the third reference temperature. The additional voltage sequence is repeated until the crystalline portion has reached the predetermined voltage stress at the third reference temperature. During each additional sequence of tensioning, annealing is provided after each bonding. In addition the removal or stripping steps can be done as described in Figures 6J and 6L.

It will also be explained with reference to FIGS. 7A-7H how to obtain an elementary structure with a crystalline portion constrained in compression from a predetermined value to a fourth reference temperature without employing a large number of different materials. Performing a first sequence of compression steps.

The fourth reference temperature is preferably an ambient temperature.

It is assumed that we start from the basic elementary structure shown in Figure 2D. We will stick the basic elemental structure the by the initial free face 23.1 of the crystalline part 23 on a target substrate 70 made of a material having a coefficient of thermal expansion greater than that of the material of the crystalline part 23. If the crystalline part 23 is made of silicon, the material with a thermal expansion coefficient lower than that of the silicon may be germanium.

The bonding is carried out at a temperature higher than the fourth reference temperature (FIG. 7A). The temperature above the fourth reference temperature may be of the order of 350 ° C.

The crystalline part and the target substrate are dilated at this bonding temperature. During cooling after sticking, the target substrate 55 will impose a partial compressive stress at the fourth reference temperature at the crystalline portion.

The assembly obtained in FIG. 7A is then annealed at a temperature of about 500 ° C. for about 2 hours. As indicated in the description of FIG. 4, the annealing has no effect on the stress of the crystalline part when it is subjected to the fourth reference temperature.

The source substrate 20 'is then removed, for example by lapping and etching. Etching can be done with TMAH if the source substrate 20 'is silicon with a buried silicon oxide barrier layer. The other face 23.2 of the crystalline part 23 is exposed, opposite to the initial free face 23.1 (FIG. 7B). The crystalline part acquires all of its compressive stress for this first compression stage. The crystalline portion 43 is constrained in compression by about - 170 MPa.

Next, a bonding step is carried out on the other face 23.2, at a temperature substantially equal to the fourth reference temperature, of a target substrate 71 made of a material having substantially the same coefficient of thermal expansion as that of the crystalline part. 23 (Figure 7C).

The material having substantially the same coefficient of thermal expansion as that of the crystalline portion 43 may be silicon as well as the crystalline portion.

The crystalline portion 23 retains the compressive stress acquired after the step illustrated in FIG. 7B at the fourth reference temperature. After this bonding, thermal annealing of the assembly illustrated in FIG. 7C is carried out at a temperature of about 200 ° C. for about two hours. The crystalline portion 23 retains its compressive stress acquired after the step illustrated in FIG. 7B at the fourth reference temperature. The target substrate 70 is then removed from a material with a coefficient of thermal expansion greater than that of the material of the crystalline part 23, for example by lapping and etching so as to expose the initial free face 23.1 of the crystalline part (FIG. 7D). The crystalline portion 23 retains its compression stress acquired after the removal step illustrated in FIG. 7B at the fourth reference temperature. The etching can be done with a mixture of water / hydrogen peroxide / ammonia at about 70 ° C if the material with a coefficient of thermal expansion greater than that of the material of the crystalline part is germanium.

If the crystalline part 23 illustrated in FIG. 7D has acquired a compressive stress equal to the predetermined compressive stress at the fourth reference temperature at the end of the first compression sequence, one of the structures to be assembled has been obtained. . The compressive stress of the crystalline part will not change with temperature variations since the crystalline part is bonded to a target substrate made of a material with a coefficient of thermal expansion substantially equal to that of the crystalline part.

If the compressive stress of the crystalline part at the fourth reference temperature is lower than the predetermined compressive stress at the end of the first compression step, it is possible to repeat one or more times an additional compression sequence. .

In each additional compression sequence, the step illustrated in FIG. 7A, of bonding to the initial free face 23.1 of a target substrate 70 in a material with a coefficient of thermal expansion greater than that of the material of the crystalline part, is repeated. 23 at a temperature above the fourth reference temperature (Figure 7E). This temperature may be of the order of 350 ° C. After the bonding, when the crystalline part 23 is returned to the fourth reference temperature, it has an increased compressive stress compared to that it had before bonding but partial compared to that it will have at the end of the additional sequence of compression in progress . Thermal annealing of the assembly illustrated in FIG. 7E is carried out at a temperature of the order of 500 ° C. for approximately 2 hours.

The additional sequence of compression is continued by a step of withdrawal by etching and chemical etching of the target substrate 71 in thermal expansion coefficient material substantially equal to that of the material of the crystalline portion 43 so as to expose the other 23.2 of the crystalline portion 23 (FIG. 7F). Chemical etching can be done with TMAH if the material is silicon.

After this removal step, the crystalline portion 23 acquires an additional compressive stress compared to that before the beginning of the current sequence. It will keep this constraint in compression until the end of the additional compression sequence. This additional compressive stress is about - 170 MPa. With a temperature of the order of 200 ° C instead of 350 ° C, an additional compressive stress of only about -85 MPa would have been obtained instead of about -170 MPa.

The additional sequence of compression is continued by repetition of the step illustrated in FIG. 7C, then sticking, on the other face 23.2, of a target substrate 73 made of a material having substantially the same coefficient of thermal expansion as that of the material of the crystalline part 23 (FIG. 7G) at the fourth reference temperature. The material having substantially the same coefficient of thermal expansion as that of the crystalline portion 73 may be silicon as well as the crystalline portion. This bonding has no influence on the compressive stress of the crystalline part at the fourth reference temperature. The sequence also comprises the reiteration of the step 7D of removal of the target substrate 72 in a thermal expansion coefficient material greater than that of the material of the crystalline portion 43, for example by lapping and etching so as to expose the face initial free 23.1 of the crystalline portion 23 (Figure 7H).

The crystalline portion retains at the fourth reference temperature the increased compressive stress acquired at the end of the step of removing the target substrate 71 shown in FIG. 7F. This increased stress may be equal to or less than the predetermined compressive stress at the fourth reference temperature. The additional compression sequence is repeated until the crystalline portion has reached the predetermined compressive stress at the fourth reference temperature. During each additional sequence of compression, annealing is provided after each bonding. In addition the removal or stripping steps can be done as described in Figures 7B and 7D. The crystalline portion 23 having the predetermined compressive stress at the fourth reference temperature has a mesh parameter which is different from that in FIG. 2D. There was thus obtained a treated elementary structure. The difference between the fourth reference temperature and the temperature above the fourth reference temperature, the target substrate materials and the number of compression sequences are chosen to obtain the predetermined compressive stress at the fourth reference temperature.

It will also be explained with reference to FIGS. 71 to 7P how to obtain an elementary structure with a crystalline portion constrained in compression from a predetermined value to a fourth reference temperature without employing a large number of different materials while remaining cheap. This embodiment makes it possible, for example, if the crystalline portion is made of silicon not to use a material with a coefficient of thermal expansion greater than that of the crystalline part such as germanium, which is an expensive material.

The fourth reference temperature is preferably an ambient temperature.

It is assumed that we start from the basic elementary structure shown in Figure 2D. The base elemental structure I1 is bonded by the initial free face 23.1 of the crystalline part 23 to a target substrate 70.1 made of a material with a coefficient of thermal expansion less than that of the material of the crystalline part 23. If the crystalline part 23 is made of silicon, the material with a coefficient of thermal expansion lower than that of silicon may be silica or glass.

The bonding is carried out at a temperature substantially equal to the fourth reference temperature (FIG. 71).

The crystalline portion 23 and the target substrate 70.1 are not dilated at this bonding temperature. This bonding does not cause stress to the crystalline part nor in tension nor in compression.

The source substrate 20 'is then removed, for example by lapping and etching. The other face 23.2 of the crystalline part 23 is exposed, opposite to the initial free face 23.1 (FIG. 7J).

Next, a step of bonding to the other face 23.2, at a temperature above the fourth reference temperature, of a target substrate 71.1 made of a material having substantially the same coefficient of thermal expansion as that of the crystalline part 23 is carried out. (Figure 7K).

The bonding is done hot, the crystalline portion 23 and the target substrate 71.1 are expanded. The expansion of the crystalline part is limited because of its prior bonding on the target substrate 70.1 in material having a coefficient of thermal expansion lower than its own. But during the cooling which follows the bonding and the return to the fourth reference temperature, the crystalline portion 23 is forced to contract more than it would like, because the target substrate 71.1 material having a coefficient of thermal expansion superior to his leads to compression. It is therefore constrained in compression partially at the fourth reference temperature.

The target substrate 70.1 is then removed from a material with a coefficient of thermal expansion that is smaller than that of the material of the crystalline part 23 so as to expose the initial free face 23.1 of the crystalline part (FIG. 7L). The crystalline portion 23 acquires all of its compressive stress at the fourth reference temperature for the current compression sequence.

If the crystalline portion 23 illustrated in FIG. 7L has acquired a compressive stress equal to the predetermined compressive stress at the fourth reference temperature, one of the structures to be assembled has been obtained. The compressive stress of the crystalline part will not change with temperature variations since the crystalline part is bonded to a target substrate made of a material with a coefficient of thermal expansion substantially equal to that of the crystalline part.

If the compressive stress of the crystalline portion at the fourth reference temperature is less than the predetermined compressive stress, an additional compression sequence can be repeated one or more times.

In each additional compression sequence, the step illustrated in FIG. 71 is repeated, of bonding on the initial free face 23.1 of a target substrate 72.1 made of a material with a coefficient of thermal expansion less than that of the material of the invention. the crystalline part 23 at a temperature substantially equal to the fourth reference temperature (FIG. 7M). This bonding does not bring stress to the crystalline part, neither in tension nor in compression.

The additional sequence of compression is continued by a step of removal by breaking-in and chemical etching of the target substrate 71.1 material with thermal expansion coefficient substantially equal to that of the material of the crystalline portion 23 so as to expose the other 23.2 of the crystalline portion 23 (Figure 7N).

The additional sequence of compression is continued by repetition of the step illustrated in FIG. 7K, then sticking, on the other face 23.2, a target substrate 73.1 made of a material having substantially the same coefficient of thermal expansion as that of the material of the crystalline part 23 (FIG. 70) at a temperature higher than the fourth reference temperature.

The bonding is done hot, the crystalline portion 23 and the target substrate 73.1 are expanded. The expansion of the crystalline part is limited because of its prior bonding on the target substrate 72.1 material having a coefficient of thermal expansion less than hers. But during the cooling following the bonding and the return to the fourth reference temperature, the crystalline portion 23 acquires an increased but partial compressive stress.

The sequence also includes the reiteration of step 7L of removal of the target substrate 72 material with thermal expansion coefficient lower than that of the material of the crystalline portion 43, so as to expose the initial free face 23.1 of the crystalline portion 23 (Figure 7P).

The crystalline portion acquires at the fourth reference temperature an increased compressive stress compared to that acquired after cooling after gluing of FIG. 70. This increased stress may be equal to or less than the predetermined compressive stress at the fourth temperature of the reference. The additional compression sequence is repeated until the crystalline portion has reached the predetermined compressive stress at the fourth reference temperature. During each additional sequence of compression, annealing is provided after each bonding. In addition, the steps of withdrawal or stripping can be done as described in Figures 7J and 7L.

From the foregoing, it is understood that in order to obtain a stress in tension, it is necessary to raise the temperature of the crystalline film with a substrate made of a material with a coefficient of thermal expansion greater than its cold after having glued it hot on a substrate with a coefficient of thermal expansion inferior to his. In a variant, it suffices to glue it hot on a substrate with a coefficient of thermal expansion lower than its own.

To obtain a compressive stress, it is necessary to assemble the crystalline film with a substrate made of a material with a coefficient of thermal expansion lower than its cold one, after having glued it hot on a substrate with a coefficient of thermal expansion greater than its own. In a variant, it suffices to glue it hot on a substrate with a coefficient of thermal expansion greater than its own. By cold means ambient temperature or less and by hot a temperature above room temperature.

It is then sufficient to assemble the two crystalline parts by their bonding face obtained in FIGS. 6H and 7H (or 6P and 7P) or else the crystalline part obtained in FIG. 6H (or 6P) with the crystalline part obtained in FIG. 2D or the crystalline part obtained in FIG. 7H (or 7P) with the crystalline part obtained in FIG. 2E as described in FIG. 5. The choice of materials having a higher, lower or substantially equal thermal expansion coefficient at that of the crystalline parts, bonding temperatures as well as the number of sequences condition the compressive or tensile stresses imposed on the crystalline part. These choices do not pose a problem to the skilled person.

The material of the crystalline part and the target substrates made of a material with a coefficient of thermal expansion substantially equal to that of the material of the crystalline part are chosen from silicon, germanium, gallium nitride, silicon carbide and arsenide. of gallium, indium phosphide.

The target substrates made of a material with a coefficient of thermal expansion greater than that of the material of the crystalline part, the substrates in a material with a coefficient of thermal expansion less than that of the material of the crystalline part are chosen from silicon, germanium, fused silica, glass, silicon carbide, gallium arsenide, indium phosphide, sapphire, copper, aluminum. Of the materials cited for the target substrates, only glass and fused silica have a coefficient of thermal expansion less than that of silicon.

An advantage of the process according to the invention is that crystalline structures made of the same material are used. An advantage of using the layer transfer technique to obtain the desired stress in the crystalline part of the treated elementary structure makes it possible not to create internal dislocations.

The fact that the two crystalline parts come from the same crystal and that the crystal lattices of these crystalline parts are substantially aligned during assembly makes it possible to overcome the crystalline disorientations in flexion and torsion.

Although several embodiments of the present invention have been described in detail, it will be understood that various changes and modifications can be made without departing from the scope of the invention. CITES DOCUMENTS

[1] "How to control the self-organization of nanoparticles by bonded thin layers", A. Bourret, Surf. Sci., Vol 432, number 1-2, pages 37 to 53 (1999)

[2] "Introduction to dislocations", Hull, D. Pergamon press Fourth edition 2001;

[3] "Controlled surface nanopatterning with buried dislocation arrays" Leroy et al., Surf. Sci., Vol 545, issue3, pages 211-219 (2003); [4] "GaAs / GaAs twist-bonding for compiling substrates: interface structure and epitaxial growth" Patriarche et al. Api. Surf. Sci. 164, number 1, pages 15 to 17, (2000);

[5] FR-A1 - 2,819,099.

Claims

A method of making a structure having a two-dimensional network of periodic dislocations wedge comprising the steps of:

to provide two basic elemental structures (1 ', 2') each having a crystalline part (23, 43), these crystalline parts coming from the same crystalline block, having the same mesh parameter, the same crystal lattice, each also having at least one mark (31, 34), the two marks (31, 34) having the same orientation with respect to the crystalline lattice of the crystalline part (23, 43) which carries them,

imposing a predetermined constraint on at least one crystalline portion (23, 43) to change its mesh parameter in a desired manner to provide a processed elemental structure (48, 65),

assembling the crystalline portion (43) of a treated elemental structure (48) with another crystalline portion (23) of a treated elementary structure (65) or of a basic elementary structure (1 '), substantially coinciding with their markers (31, 34) so that a disagreement of the mesh parameters appears and creates the two-dimensional network of periodic dislocations coin with a desired periodicity dependent on the disagreement of the mesh parameters.

2. Production method according to claim 1, wherein the assembly is a hydrophobic assembly.

3. A method of producing a structure having a two-dimensional network of periodic dislocations corner according to one of claims 1 or 2, wherein the marks (31, 34) are reporters, graduated rulers, flats.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 1, wherein each basic elementary structure (1 ', 2') is a stack with a source substrate (20 ', 40'). and the crystalline portion (23, 43), each crystalline portion (23, 43) having an initial free face (23.1, 43.1) and another adhered face (23.2, 43.2) to the source substrate (20 ', 40').

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 4, wherein for providing the two basic elemental structures (1 ', 2'):

starting from a semiconductor-on-insulator substrate (200) with an insulating layer (21) sandwiched between two semiconductor layers (20, 22), one of which is thinner than the other,

ion implantation is performed in the thinnest semiconductor layer (22) at an implanted area (22.2), the thinnest semiconductor layer (22) is provided with at least one common reference (300), before or after ion implantation,

the thinnest semiconductor layer (22) is reported on a thicker semiconductor substrate (40) surface-oxidized,

the thinner semiconductor layer (22) is separated into the implanted zone (22.2) in two parts so as to obtain the two basic elementary structures (1 ', 2') with their crystalline part (23). , 43), their source substrate (20 ', 40') being formed, for one of the basic elementary structures (1 '), by the other layer (20) of semiconductor and by the layer of insulating material (21) of the semiconductor-on-insulator substrate (200), and for the other basic elementary structure (2 '), by the thicker semiconductor substrate (40) reported surface-oxidized.

6. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined voltage stress to the crystalline portion (43) of a basic elementary structure (2 ') at a first reference temperature and transforming it into a treated elementary structure (48): a first tensioning sequence is carried out in which:

al °) a target substrate (45) is bonded to a material having a coefficient of thermal expansion smaller than that of the source substrate material (40 ') the crystalline portion (43) on the initial free face (43.1) of the crystalline portion (43) at a temperature above the first reference temperature,

bl °) the source substrate (40 ') is removed so as to expose the other face (43.2) of the crystalline part (43),

cl °) a target substrate (46), substantially at the first reference temperature, is adhered to the other face (43.2) of the crystalline portion (43), said target substrate being of a material having a higher thermal expansion coefficient to that of the material of the target substrate (45) bonded during the first gluing step a) of the first tensioning sequence,

dl °) the target substrate (45) adhered in the first bonding step (a) of the first tensioning sequence is removed, exposing the initial free face (43.1) of the crystalline portion (43) which is then voltage stress, this voltage constraint being less than or equal to the predetermined voltage stress, this initial free face becoming a bonding face if step d1 °) is a final step of tensioning.

7. A method of producing a structure having a two-dimensional network of periodic dislocations wedge according to claim 6, wherein if the predetermined voltage stress is not reached in step d1 °) of the first tensioning sequence , one or more sequences additional voltage setting after step d1) until reaching the predetermined voltage, in each additional power-up sequence,

a) a target substrate (47 ') is bonded to the initial free face (43.1) of the crystalline portion (43) at a temperature above the first reference temperature, said target substrate (47') being in a material having a coefficient of thermal expansion less than that of the target substrate material (46) adhered to the other face (43.2) of the crystalline portion (43) in the second bonding step of the preceding sequence,

bl '°) is removed the target substrate (46) stuck on the other side of the crystalline portion, during the second bonding step of the previous sequence, so as to expose the other face (43.2) of the crystalline part (43),

cl '°) is glued on the other side (43.2) a target substrate (48') of a material having a coefficient of thermal expansion greater than that of the target substrate material (47 ') adhered to the crystalline portion (43) at the first bonding step of the current sequence, substantially at the first reference temperature, or

a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the first reference temperature, is adhered to the other face (43.2), this alternative being preferred during the last sequence additional, dl '°) is removed the target substrate (47') glued to the first gluing step a ') of the current sequence, exposing the initial free face (43.1) of the crystalline portion (43) which is constrained in tension, this initial free face (43.1) becoming a connecting face if step d1 ') is a final step of tensioning,

during the last additional tensioning sequence, at the end of step b1 '°), the crystalline part (43) then having a voltage stress equal to the predetermined voltage stress at the first reference temperature, the difference between the first reference temperature and the temperature above the first reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 6 or claim 7, wherein when the predetermined voltage stress has been reached at the first reference temperature and the crystalline portion (43). ) is bonded to a target substrate made of a material with a coefficient of thermal expansion different from that of the crystalline part, so as to prevent the stress in tension from evolving subsequently, the initial free face of the crystalline part being exposed, a finishing sequence is carried out in which : all °) is glued on the initial free face (43.1) of the crystalline portion (43), a target substrate (47) of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion (43), substantially at the first reference temperature,

b1) the target substrate (46) is removed from the material having a thermal coefficient of thermal expansion different from that of the material of the crystalline portion (46) so as to expose the other face (43.2) of the crystalline portion (43). ),

cll °) a target substrate (48) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion (43) is adhered to the other face (43.2) at any temperature,

dll °) exposes the initial free face (43.1) of the crystalline part (43), this initial free face becoming a connecting face.

9. A method of producing a structure having a two-dimensional network of periodic dislocations corner according to one of claims 4 or 5, wherein to impose a predetermined voltage stress to the crystalline portion (43) of a basic elementary structure (2 ') at a first reference temperature and transforming it into a treated elementary structure (48.1): a first tensioning sequence is carried out in which:

al .1 °) a target substrate (45.1) is bonded in a material having a coefficient of thermal expansion greater than that of the source substrate material (40 ') of the crystalline part (43), on the initial free face (43.1) of the crystalline part, at a temperature substantially equal to the first reference temperature,

bl.l °) the source substrate (40 ') is removed so as to expose the other face (43.2) of the crystalline part (43),

cl .1 °) a target substrate (46.1) is adhered to the other face (43.2) of the crystalline part at a temperature higher than the first reference temperature, this target substrate (46.1) being made of a material having a coefficient of thermal expansion less than that of the target substrate material (45.1) bonded during the first bonding step al.l °) of the first tensioning sequence,

dl.l °) the target substrate (45.1) bonded during the first gluing step of the first tensioning sequence is removed, exposing the initial free face of the crystalline portion (43) which is then stressed in tension this voltage constraint being less than or equal to the predetermined voltage constraint, this initial free face becoming a connection face if step d1.l °) is a final step of tensioning.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 9, wherein if the predetermined voltage stress is not reached in step d1.1 of the first sequence of when it is put into tension, one or more additional tensioning sequences are carried out after step d1 (1) until the predetermined voltage is reached, in each additional tensioning sequence,

a target substrate (47.1 ') is bonded to the initial free face (43.1) of the crystalline part (43) at a temperature substantially equal to the first reference temperature, this target substrate (47.1') being in a material having a coefficient of thermal expansion greater than that of the target substrate material (46.1) adhered to the other face (43.2) of the crystalline part during the second bonding step of the preceding sequence,

b) removing the target substrate (46.1) adhered to the other face (43.2) of the crystalline portion (43) during the second bonding step of the preceding sequence, so as to expose the another face (43.2) of the crystalline part (43),

cl.l '°) a target substrate (48.1') is glued in a material having a thermal coefficient of expansion less than that of the target substrate material (47.1 ') adhered to the crystalline part (43) at the first bonding step of the current sequence, at a temperature higher than the first reference temperature,

or else a target substrate of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part is adhered to the other side of the crystalline part at a temperature greater than the first temperature of the crystalline part. reference, this alternative being preferred during the last additional sequence.

dl.l '°) is removed the target substrate (47.1') glued in the first gluing step al .1 ')) the current sequence exposing the initial free face (43.1) of the crystalline part (43) ) which is voltage-constrained, this initial free face becoming a connection face if step d1.l '°) is a final step of tensioning,

during the last additional tensioning sequence, at the end of step d1.l '°), the crystalline part (43) then having a voltage stress equal to the voltage stress predetermined at the first temperature of reference, the difference between the first reference temperature and the temperature above the first reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 9 or claim 10, wherein when the predetermined voltage stress has been reached at the first reference temperature and the crystalline portion (43). ) is bonded to a target substrate made of a material with a coefficient of thermal expansion different from that of the crystalline part, so as to prevent the voltage stress from evolving later, the free face the crystalline portion being exposed, a finishing sequence is carried out in which:

all.l °) is glued on the initial free face (43.1) of the crystalline portion (43), a target substrate (47.1) of material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion (43) , substantially at the first reference temperature,

bll.l °) the target substrate (46.1) is removed from a material with a coefficient of thermal expansion different from that of the material of the crystalline part (43), so as to expose the other face (43.2) of the crystalline part. (43),

cll.l °) a target substrate (48.1) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part (43) is adhered on the other face (43.2) at any temperature,

dll.l °) the initial free face (43.1) of the crystalline part (43.1) is exposed, this initial free face becoming a connecting face.

12. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined compressive stress to the crystalline portion of a basic elementary structure to a second reference temperature and transforming it into a treated elementary structure, a first compression sequence is carried out in which: a2 °) a target substrate (60) is adhered to a material having a thermal expansion coefficient greater than that of the source substrate material (20 ') of the crystalline part (23), on the initial free face (23.1) of the crystalline part (23), at a temperature higher than the second reference temperature,

b2 °) the source substrate (20 ') is removed so as to expose the other face (23.2) of the crystalline part (23),

c2 °) a target substrate (61) is adhered to the other face (23.2) of the crystalline part (23), substantially at the second reference temperature, this target substrate (61) being in a material having a coefficient of expansion thermal less than that of the target substrate material (60) bonded during the first bonding step a2 °) of the first compression sequence,

d2 °) the target substrate (60) bonded during the first bonding step a2 °) is removed from the first compressing sequence, exposing the initial free face (23.1) of the crystalline part (23) which is compressive stress, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a bonding face if step d2 °) is a final step of compression.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 12, wherein when the predetermined compression is not reached in step d2 °) of the first compression sequence, one or more additional compression sequences are carried out after step d2 °) until reaching the predetermined compression , in each additional sequence of compression:

a2 '°) a target substrate (62') is bonded to the initial free face (23.1) of the crystalline part (23) at a temperature higher than the second reference temperature, this target substrate (62 ') being in a material having a coefficient of thermal expansion greater than that of the target substrate material (61) adhered to the other face (23.2) of the crystalline part during the second bonding step of the preceding sequence,

b2 '°) is removed the target substrate (61) glued on the other face (23.2) of the crystalline portion (23), during the second step of bonding the previous sequence, so as to expose the other face (23.2) of the crystalline part,

c2 '°) is glued on the other side (23.2) a target substrate (63') of a material having a coefficient of thermal expansion less than that of the target substrate material (62 ') bonded to the crystalline part (23) at the first bonding step of the current sequence, substantially at the second reference temperature,

or else a target substrate (63 '') of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, substantially at the second reference temperature, this alternative being preferred during the last additional sequence,

d2 '°) is removed the target substrate (62') glued to the first gluing step a2 '°) of the current sequence, exposing the initial free face (23.1) of the crystalline portion which is constrained in compression, this initial free face (23.1) becoming a connecting face if step d2 '°) is a final step of compression,

during the last additional compression sequence, at the end of step b2 '°), the crystalline part (23) then having a compressive stress equal to the predetermined compressive stress at the second reference temperature, the difference between the second reference temperature and the temperature above the second reference temperature, the target substrate materials and the number of sequences being chosen to obtain the predetermined compressive stress.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 12 or claim 13, wherein when the predetermined compressive stress has been reached and the crystalline portion (23) is bonded to a substrate. target (61) made of a material with a coefficient of thermal expansion different from that of the crystalline part, to prevent the stress from evolving later, the initial free face (23.1) of the crystalline portion being exposed, a finishing sequence may be carried out in which:

a22 °) is glued on the initial free face (23.1) of the crystalline portion (23), a target substrate (62) of material having a coefficient of thermal expansion substantially equal to that of the crystalline material, substantially at the second reference temperature ,

b22 °) the target substrate (61) is removed from the material with a thermal coefficient of thermal expansion different from that of the material of the crystalline part, so as to expose the other face (23.2) of the crystalline part (23),

c22 °) is glued on the other side (23.2) a target substrate (63) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part (23), at any temperature,

d22 °) we expose the initial free face

(23.1) of the crystalline part (23), this initial free face becoming a connecting face.

15. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined compressive stress to the crystalline portion of a basic elementary structure to a second reference temperature and turn it into an elemental structure treated, a first compression sequence is performed in which:

a2.1 °) a target substrate 60.1) is glued, in a material having a coefficient of thermal expansion less than that of the source substrate material (20 ') of the crystalline part (23), on the initial free face (23.1) the crystalline part (23) at a temperature substantially equal to the second reference temperature,

b2.1 °) the source substrate (20 ') is removed so as to expose the other face (23.2) of the crystalline part (23),

c2.1 °) a target substrate (61.1) is adhered to the other face (23.2) of the crystalline part at a temperature higher than the second reference temperature, this target substrate (61.1) being in a material having a coefficient of thermal expansion greater than that of the material of the target substrate (60.1) bonded during the first bonding step a2.1 °) of the first compression sequence,

d2.1 °) is removed the target substrate (60.1) bonded during the first gluing step a2.1 °) of the first compression sequence, exposing the initial free face (23.1) of the crystalline part ( 23) which is constrained in compression, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a connecting face if the step d2.1 °) is a final step of compression.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 15, wherein when the predetermined compression is not reached in step d2.1 °) of the first compression sequence. one or more additional compression sequences are performed after step d2.1 °) until reaching the predetermined compression, in each additional compression sequence:

a2.1 '°) is bonded a target substrate (62.1') on the initial free face (23.1) of the crystalline part (23), at a temperature substantially equal to the second reference temperature, this target substrate (62.1 ') being in a material having a coefficient of thermal expansion less than that of the target substrate material (61.1) adhered to the other side of the crystalline portion during the second bonding step of the preceding sequence,

b2.1 '°) is removed the target substrate (61.1) glued on the other face (23.2) of the crystalline part, during the second bonding step of the previous sequence, so as to expose the other side (23.2) of the crystalline part,

c2.1 '°) is glued on the other side (23.2), a target substrate (63.1') of a material having a coefficient of thermal expansion greater than that of the target substrate material (62.1 ') glued to the part crystalline (23) at the first step of bonding the current sequence, at a temperature higher than the second reference temperature, or else it is glued on the other side, a target substrate (63.1 '') made of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part, at a temperature higher than the second reference temperature, this alternative being preferred during the last additional sequence,

d2.1 '°) is removed the target substrate (62.1') glued to the first gluing step a2.1 '°) of the current sequence exposing the initial free face (23.1) of the crystalline part which is constrained in compression, this initial free face becoming a connecting face if step d2.1 '°) is a final step of compression,

during the last additional compression sequence, at the end of step d2.1 '°), the crystalline part then having a compressive stress equal to the predetermined compressive stress at the second reference temperature, the difference between the second reference temperature and the temperature greater than the second reference temperature, the target substrate materials and the number of sequences being chosen to obtain the predetermined compressive stress.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 15 or claim 16, wherein when the predetermined compressive stress has been reached and the crystalline portion (23) is bonded to a substrate. target (61.1) of material with coefficient of expansion thermally different from that of the crystalline part, to prevent the stress evolves subsequently, the initial free face (23.1) of the crystalline portion being exposed, a finishing sequence may be carried out in which:

a22.1 °) is glued on the initial free face (23.1) of the crystalline portion (23), a target substrate (62.1) of material having a coefficient of thermal expansion substantially equal to that of the crystalline material, substantially at the second temperature reference,

b22.1 °) the target substrate (61.1) is removed from the material with a coefficient of thermal expansion different from that of the material of the crystalline part (23), so as to expose the other face (23.1) of the part crystalline,

c22.1 °) is glued on the other face (23.2), a target substrate (63.1) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part (23), at any temperature,

d22.1 °) exposes the initial free face (23.1) of the crystalline part, this initial free face becoming a connecting face.

18. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined voltage stress to the crystalline portion (43) of a basic elementary structure (2 ') to a third reference temperature and transforming it into a treated elementary structure (59), a first tensioning sequence is carried out in which:

a3 °) a target substrate (55) is bonded to a material having a coefficient of thermal expansion less than that of the material of the crystalline part (43), to the initial free face (43.1) of the crystalline part, at a higher temperature at the third reference temperature,

b3 °) the source substrate (40 ') is removed so as to expose the other face (43.2) of the crystalline part (43),

c3 °) a target substrate (56) is bonded in a material having a coefficient of thermal expansion substantially equal to that of the crystalline part (43), on the other side (43.2), at a temperature substantially equal to the third temperature reference,

d3 °) the target substrate (55) is removed from the material with a coefficient of thermal expansion smaller than that of the material of the crystalline part (43, exposing the initial free face (43.1) of the crystalline part (43) which is stress in tension, this voltage stress being less than or equal to the predetermined voltage stress, this initial free face becoming a connecting face if step d3 °) is a final step of tensioning.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 18, wherein if the predetermined voltage constraint is not reached in step d3 °) of the first power-up sequence, one or more additional power-up sequences are carried out after step d3 °) until the constraint is reached in predetermined voltage, in each additional voltage sequence:

a3 ') a target substrate (57) is adhered to the initial free face (43.1) of the crystalline portion (43) at a temperature above the third reference temperature, said target substrate (57) being in a material having a coefficient of thermal expansion less than that of the material of the crystalline part (43),

b3 '°) is removed the target substrate (56) stuck on the other face (43.2) of the crystalline portion (43), during the second step of bonding the previous sequence, so as to expose the other face (43.2) of the crystalline part,

c3 '°) is glued on the other face (43.2) a target substrate (58) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion (43), substantially at the third reference temperature ,

d3 '°) is removed the target substrate (57) glued to the first gluing step a3' °) of the current sequence, exposing the initial free face (43.1) of the crystalline portion (43) which is constrained in voltage, this initial free face becoming a connecting face if step d3 '°) is a final step of tensioning, during the last additional tensioning sequence, at the end of step b3 '°), the crystalline part then having a voltage stress equal to the predetermined voltage stress at the third reference temperature, the difference between the third reference temperature and the temperature above the third reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

20. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined voltage stress to the crystalline portion (43) of a basic elementary structure (2 ') at a third reference temperature and transforming it into a treated elementary structure (59.1), a first tensioning sequence is carried out in which:

a3.1 °) is bonded a target substrate (55.1) of a material having a coefficient of thermal expansion greater than that of the material of the crystalline portion (43), on the initial free face (43.1) of the crystalline portion, to a a temperature substantially equal to the third reference temperature,

b3.1 °) the source substrate (40 ') is removed so as to expose the other face (43.2) of the crystalline part (43),

c3.1 °) a target substrate (56.1) is adhered to the other face (43.2) of the crystalline part (43), at a temperature above the third reference temperature, said target substrate (56.1) being of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline portion (43),

d3.1 °) the target substrate (55.1) bonded during the first bonding step of the first tensioning sequence is removed, exposing the initial free face (43.1) of the crystalline portion (43) which is constrained in voltage, this voltage constraint being less than or equal to the predetermined voltage stress, this initial free face becoming a bonding face if at the end of step d3.1 °) the crystalline part has the predetermined voltage constraint at the third reference temperature.

21. A method of producing a structure having a two-dimensional network of wedge periodic dislocations according to claim 20, wherein if the predetermined voltage stress is not reached in step (d3.1 °) of the first setting sequence. in voltage, one or more additional voltage setting sequences are carried out after step d3 °) until reaching the predetermined voltage constraint, in each additional voltage setting sequence:

a3.1 '°) is glued a target substrate (57.1) on the initial free face (43.1) of the crystalline part (43) at a temperature substantially equal to the third reference temperature, this substrate target (57.1) being of a material having a coefficient of thermal expansion greater than that of the material of the crystalline portion (43),

b3.1 '°) is removed the target substrate (56.1) glued on the other face (43.2) of the crystalline portion (43), during the second step of bonding the previous sequence, so as to expose the other face (43.2) of the crystalline part,

c3.1 '°) is glued on the other side (43.2) of the crystalline part (43), a target substrate (58.1) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part ( 43) at a temperature above the third reference temperature,

d3.1 '°) is removed the target substrate (57.1) glued in the first gluing step a3.1')) of the current sequence, exposing the initial free face (43.1) of the crystalline portion (43.1) ) which is voltage-stressed, this initial free face (43.1) becoming a connecting face if the step d3.1 '°) is a final step of tensioning,

during the last additional tensioning sequence, at the end of step d3 .1 '°) the crystalline part then having a voltage stress equal to the predetermined voltage stress at the third reference temperature, the difference between the third reference temperature and the temperature above the third reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined voltage stress.

22. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined compressive stress to the crystalline portion (23) of a basic elementary structure (1 ') at a fourth reference temperature and transforming it into a treated elementary structure, a first compression sequence is carried out in which:

a4 °) a target substrate (70) is bonded to a material having a coefficient of thermal expansion less than that of the material of the crystalline part (23), to the initial free face (23.1) of the crystalline part (23), to a temperature substantially equal to the fourth reference temperature,

b4 °) the source substrate (20 ') is removed so as to expose the other face (23.2) of the crystalline part (23),

c4 °) a target substrate (71) is adhered to the other face (23.2) of the crystalline part (23) at a temperature higher than the fourth reference temperature, this target substrate (71) being made of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part (23),

d4 °) the target substrate (70) bonded during the first gluing step a4 °) is removed from the first compression sequence, exposing the initial free face (23.1) of the crystalline portion (23) which is compressive stress, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a connecting face if step d4 °) is a final step of compression.

A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 22, wherein if the predetermined compression is not reached at step d4 °) of the first compression sequence, one or more additional compression sequences are carried out after step d4 °) until the predetermined compressive stress is reached, in each additional compression sequence:

a4 '°) is bonded a target substrate (72) on the initial free face (23.1) of the crystalline part (23) at a temperature substantially equal to the fourth reference temperature, this target substrate (71) being in a material having a coefficient of thermal expansion less than that of the material of the crystalline part (23),

b4 '°) is removed the target substrate (71) adhered to the other face (23.2) of the crystalline portion (23), during the second step of bonding the previous sequence, so as to expose the other face (23.2) of the crystalline part,

c4 '°) a target substrate (73) of a material having a thermal expansion coefficient substantially equal to temperature above the fourth reference temperature,

d4 ') is removed the target substrate (72) adhered to the first gluing step a4')) of the current sequence, exposing the initial free face (23.1) of the crystalline portion (23) which is constrained in compression, this initial free face (23.1) becoming a connecting face if step d4 '°) is a final step of compression,

during the last additional compression sequence, at the end of step d4 '°), the crystalline part then having a compressive stress equal to the predetermined compressive stress at the fourth reference temperature, the difference between the fourth reference temperature and the temperature above the fourth reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined compressive stress.

24. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 4 or 5, wherein to impose a predetermined compressive stress to the crystalline portion (23) of a basic elementary structure (1 ') at a fourth reference temperature and transforming it into a treated elementary structure, a first coding sequence is carried out. in which:

a4.1 °) a target substrate (70.1) is bonded in a material having a coefficient of expansion greater than that of the material of the crystalline part (23), on the initial free face (23.1) of the crystalline part, at a temperature higher than the fourth reference temperature,

b4.1 °) the source substrate (20 ') is removed so as to expose the other face (23.2) of the crystalline part (23),

c4.1 °) a target substrate (71.1) is bonded on the other face (23.2) of the crystalline part (23), in a material having substantially the same coefficient of thermal expansion as that of the crystalline part (23), at a temperature substantially equal to the fourth reference temperature,

d4.1 °) the target substrate (70.1) bonded during the first bonding step a4.1 °) is removed from the first sequence exposing the initial free face (23.1) of the crystalline part (23) which is constrained in compression, this compressive stress being less than or equal to the predetermined compressive stress, this initial free face becoming a bonding face if in step d4.1 °) the crystalline part has the predetermined compressive stress at the fourth temperature reference.

25. A method of making a structure having a two-dimensional network of wedge periodic dislocations according to claim 24, wherein if the predetermined compression is not achieved in step d.4.1 °) of the first setting sequence. compression, one or more additional compression sequences are carried out after step d4.1 °) until reaching the predetermined compressive stress, in each additional compression sequence:

a4.1 '°) is bonded a target substrate (72.1) on the initial free face (23.1) of the crystalline part (23), at a temperature higher than the fourth reference temperature, this target substrate (72.1) being in a material having a coefficient of thermal expansion greater than that of the material of the crystalline part (23),

b4.1 '°) is removed the target substrate (71.1) glued on the other side (23.2) of the crystalline part (23) during the second bonding step of the previous sequence, so as to expose the another face (23.2) of the crystalline part (23),

c4.1 '°) is glued on the other side (23.2) a target substrate (73.1) of a material having a coefficient of thermal expansion substantially equal to that of the material of the crystalline part (23), at a substantially equal temperature at the fourth reference temperature,

d4.1 '°) is removed the target substrate (72.1) glued to the first gluing step a2.1')) of the current sequence, exposing the initial free face (23.1) of the crystalline portion (23) which is constrained in compression, during the last additional compression sequence, at the end of step b4.1 '°) the crystalline part (23) then having a compressive stress equal to the predetermined compressive stress at the fourth reference temperature, the difference between the fourth reference temperature and the temperature above the fourth reference temperature, the target substrate materials and the number of sequences being selected to obtain the predetermined compressive stress.

26. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 6 to 25, wherein performs a thermal annealing step after each bonding step.

27. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 6 to 26, wherein the withdrawal steps are by lapping and etching.

28. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 6 to 27, wherein the first, second, third, fourth reference temperature is equal to a room temperature.

29. A method of producing a structure having a two-dimensional network of periodic dislocations wedge according to one of claims 1 to 28, wherein the material of the crystalline portion (23, 43) and the substrates of a material with coefficient of expansion substantially equal to that of material of the crystalline part are selected from silicon, germanium, gallium nitride, silicon carbide, gallium arsenide, indium phosphide.

30. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 1 to 29, wherein the target substrates of a material with thermal expansion coefficient greater than that of the material of the crystalline portion and the target substrates made of a material with a coefficient of thermal expansion less than that of the material of the crystalline part are chosen from silicon, germanium, fused silica, glass, silicon carbide, gallium arsenide, phosphide, indium, sapphire, copper, aluminum.

31. A method of producing a structure having a two-dimensional network of periodic dislocations coin according to one of claims 1 to 29, wherein is carried out epitaxy from at least a crystalline portion to change the nature with a material having a mesh parameter substantially equal to that of the crystalline portion.

32. A structure having two crystalline joined parts (1 ', 2', 48, 65), and at the interface between the two crystalline parts (23, 43) a two-dimensional network of periodic dislocations coin, characterized in that the parts crystalline materials (23, 43) are made of the same crystalline material from the same crystal, the crystalline parts (23, 43) having their crystal lattices substantially coincidental, at least one of the crystalline portions (23) being constrained by a value selected and having a mesh parameter different from that of the other crystalline portion (43), so that the two-dimensional network of periodic dislocations coin has a desired period.