WO2012154498A3 - Élimination d'impuretés métalliques présentes sur des surfaces de silicium pour des applications à photopile et à semi-conducteur - Google Patents

Élimination d'impuretés métalliques présentes sur des surfaces de silicium pour des applications à photopile et à semi-conducteur Download PDF

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Publication number
WO2012154498A3
WO2012154498A3 PCT/US2012/036329 US2012036329W WO2012154498A3 WO 2012154498 A3 WO2012154498 A3 WO 2012154498A3 US 2012036329 W US2012036329 W US 2012036329W WO 2012154498 A3 WO2012154498 A3 WO 2012154498A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
removal
metal impurities
semiconductor applications
silicon surfaces
Prior art date
Application number
PCT/US2012/036329
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English (en)
Other versions
WO2012154498A2 (fr
Inventor
Li-Min CHEN (Raymond)
Emanuel I. Cooper
Jeffrey A. Barnes
Jun Liu
Laisheng SUN
Thomas Baum
Michael Korzenski
Ben LOCHTENBERG
Lawrence Dubois
Original Assignee
Advanced Technology Materials, Inc.
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Publication date
Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Publication of WO2012154498A2 publication Critical patent/WO2012154498A2/fr
Publication of WO2012154498A3 publication Critical patent/WO2012154498A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/267—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

La présente invention concerne des compositions d'élimination et des procédés d'élimination d'au moins une impureté métallique d'un substrat (par exemple, un substrat contenant du silicium) sur lequel celle-ci est présente. De manière avantageuse, les compositions éliminent les impuretés métalliques, par exemple, le fer, présentes sur des substrats contenant du silicium utilisés comme dispositifs à semi-conducteur et dispositifs à photopile.
PCT/US2012/036329 2011-05-06 2012-05-03 Élimination d'impuretés métalliques présentes sur des surfaces de silicium pour des applications à photopile et à semi-conducteur WO2012154498A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161483419P 2011-05-06 2011-05-06
US61/483,419 2011-05-06

Publications (2)

Publication Number Publication Date
WO2012154498A2 WO2012154498A2 (fr) 2012-11-15
WO2012154498A3 true WO2012154498A3 (fr) 2013-01-31

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Application Number Title Priority Date Filing Date
PCT/US2012/036329 WO2012154498A2 (fr) 2011-05-06 2012-05-03 Élimination d'impuretés métalliques présentes sur des surfaces de silicium pour des applications à photopile et à semi-conducteur

Country Status (2)

Country Link
TW (1) TW201308627A (fr)
WO (1) WO2012154498A2 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2417241A4 (fr) * 2009-04-08 2014-10-15 Sunsonix Procédé et appareil destinés à éliminer des substances contaminantes à partir de substrats
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
CN102994759B (zh) * 2012-11-28 2015-09-30 大连东泰产业废弃物处理有限公司 一种废弃催化剂中贵金属的回收装置
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
TWI655273B (zh) 2013-03-04 2019-04-01 美商恩特葛瑞斯股份有限公司 選擇性蝕刻氮化鈦之組成物及方法
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
TWI683889B (zh) 2013-07-31 2020-02-01 美商恩特葛瑞斯股份有限公司 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Ｃｕ／Ｗ相容性的水性配方
WO2015031620A1 (fr) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions et procédés pour effectuer la gravure sélective du nitrure de titane
TW201511854A (zh) 2013-09-30 2015-04-01 Saint Gobain Ceramics 清潔太陽能板的方法
WO2015089023A1 (fr) 2013-12-11 2015-06-18 Fujifilm Electronic Materials U.S.A., Inc. Formulation de nettoyage pour éliminer des résidus présents sur des surfaces
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
SG11201605003WA (en) 2013-12-20 2016-07-28 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (fr) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations de gravure sélective de silicium et de germanium
EP3099839A4 (fr) 2014-01-29 2017-10-11 Entegris, Inc. Formulations de post-polissage chimico-mécanique et méthode d'utilisation associée
WO2015119925A1 (fr) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
CN104195556A (zh) * 2014-09-17 2014-12-10 中国电子科技集团公司第五十四研究所 一种湿法刻镍溶液
KR101664625B1 (ko) * 2014-12-24 2016-10-11 오씨아이 주식회사 황인의 정제방법
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
WO2017078636A1 (fr) * 2015-11-04 2017-05-11 Hayat Kimya Sanayi Anonim Sirketi Compositions comprenant des complexes métalliques à base d'acide humique oxydé
CN106310580B (zh) * 2016-08-24 2019-07-12 航天凯天环保科技股份有限公司 一种高浓度砷碱渣稳定化固化的药剂
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2019145312A1 (fr) 2018-01-25 2019-08-01 Merck Patent Gmbh Compositions d'élimination de photorésine
US11560533B2 (en) 2018-06-26 2023-01-24 Versum Materials Us, Llc Post chemical mechanical planarization (CMP) cleaning
CN111326410B (zh) * 2019-03-25 2023-03-28 湖州飞鹿新能源科技有限公司 一种用于hit电池的防花篮印制绒液及其制绒方法
BR112021020425A2 (pt) 2019-04-12 2021-12-14 Ecolab Usa Inc Composições de limpeza multiuso concentrada e pronta para uso, e, métodos para limpar uma superfície e de fabricação da composição de limpeza multiuso
EP3983499A4 (fr) * 2019-06-13 2023-08-02 Versum Materials US, LLC Compositions liquides pour éliminer sélectivement du polysilicium sur du silicium et du silicium-germanium dopés par p pendant la fabrication d'un dispositif semi-conducteur
CN112457185A (zh) * 2019-09-09 2021-03-09 连云港树人科创食品添加剂有限公司 一种柠檬酸钾母液除铁提纯工艺
JP2022553203A (ja) * 2019-10-17 2022-12-22 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Ｅｕｖマスク保護構造のためのエッチング組成物及び方法
CN111628014A (zh) * 2020-06-08 2020-09-04 哈尔滨工业大学 3d结构金刚石日盲紫外探测器及其利用铁催化氢等离子体刻蚀的制备方法
WO2022047053A1 (fr) 2020-08-28 2022-03-03 Versum Materials Us, Llc Nettoyage post-planarisation mécano-chimique (cmp)
CN113980580B (zh) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 一种单晶硅片的碱刻蚀抛光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228823B1 (en) * 1995-07-27 2001-05-08 Mitsubishi Chemical Corporation Method for treating surface of substrate and surface treatment composition used for the same
US20060011588A1 (en) * 2004-06-16 2006-01-19 Stinson Mark G Silicon wafer etching process and composition
US20100090158A1 (en) * 2008-10-09 2010-04-15 Kanto Kagaku Kabushiki Kaisha Alkaline aqueous solution composition for treating a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228823B1 (en) * 1995-07-27 2001-05-08 Mitsubishi Chemical Corporation Method for treating surface of substrate and surface treatment composition used for the same
US20060011588A1 (en) * 2004-06-16 2006-01-19 Stinson Mark G Silicon wafer etching process and composition
US20100090158A1 (en) * 2008-10-09 2010-04-15 Kanto Kagaku Kabushiki Kaisha Alkaline aqueous solution composition for treating a substrate

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TW201308627A (zh) 2013-02-16
WO2012154498A2 (fr) 2012-11-15

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