WO2012149721A1 - Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable - Google Patents

Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable Download PDF

Info

Publication number
WO2012149721A1
WO2012149721A1 PCT/CN2011/079271 CN2011079271W WO2012149721A1 WO 2012149721 A1 WO2012149721 A1 WO 2012149721A1 CN 2011079271 W CN2011079271 W CN 2011079271W WO 2012149721 A1 WO2012149721 A1 WO 2012149721A1
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength
mirror
unit
longitudinal mode
wavelength selection
Prior art date
Application number
PCT/CN2011/079271
Other languages
English (en)
Chinese (zh)
Inventor
张光勇
陈波
高磊
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN2011800022414A priority Critical patent/CN102439804A/zh
Priority to PCT/CN2011/079271 priority patent/WO2012149721A1/fr
Publication of WO2012149721A1 publication Critical patent/WO2012149721A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror

Definitions

  • the present invention relates to the field of optical communication technologies, and in particular, to a wavelength selective method for a wavelength tunable laser and a tunable laser.
  • the selected longitudinal mode beam can be returned to the gain chip by selecting the output wavelength (frequency) of the laser, and the selected longitudinal mode beam is reached in the resonant cavity by setting the end face reflectance of the gain chip in advance.
  • the threshold condition generated by the laser beam produces a laser output, such as by adjusting the current, temperature, mirror angle, grating angle, etc. of the laser to select the target wavelength.
  • Embodiments of the present invention provide a wavelength selective method for a wavelength tunable laser and a tunable laser, which can be selected by adjusting a wavelength selection unit to facilitate the wavelength selection process of the laser, reduce the required optical components, and reduce the cost. .
  • the wavelength tunable laser includes: a gain medium, a demultiplexing unit, a lens, and a wavelength selecting unit;
  • the gain medium is configured to output a multi-longitudinal mode beam;
  • the lens is configured to use the gain a plurality of longitudinal mode beams output by the medium are up to the demultiplexing unit, and a plurality of single longitudinal mode beams demultiplexed by the demultiplexing unit are aligned to the wavelength selecting unit;
  • the demultiplexing unit is used Demultiplexing the plurality of longitudinal mode beams into a plurality of single longitudinal mode beams;
  • the wavelength selection unit configured to adjust the mirror according to the preset wavelength value, and to receive the plurality of single longitudinal mode beams a single longitudinal mode beam having the same wavelength as the preset wavelength value is reflected back to the demultiplexing unit and the gain medium, and the reflected single longitudinal mode beam resonates in the cavity to reach a threshold condition generated by the laser beam, and generates a laser Output.
  • the wavelength selection method of the tunable laser includes: the wavelength selection unit receives a plurality of single longitudinal mode beams obtained by demultiplexing the demultiplexing unit; and adjusting the mirror according to the preset wavelength value, In a single longitudinal mode beam, a single longitudinal mode beam of the same wavelength as the preset wavelength value is reflected back Describe the multiplexing unit.
  • the tunable laser includes a gain medium, a lens, a demultiplexing unit, a wavelength selecting unit, and the gain medium generates a plurality of longitudinal mode beams, and the lens multi-longitudinal beam Up to the demultiplexing unit, the demultiplexing unit demultiplexes the plurality of longitudinal mode beams into a plurality of single longitudinal mode beams, and the plurality of single longitudinal mode beams are aligned by the lens until the wavelength selection unit, according to the preset wavelength value Adjusting the mirror of the wavelength selection unit, and receiving a plurality of single longitudinal mode beams, the single longitudinal mode beam having the same wavelength value and the preset wavelength value is reflected back to the demultiplexing unit, because the above retroreflection is adopted (retro-reflection) structure, and due to the reversibility of the optical path, the characteristics of the multi-longitudinal beam emitted by the gain medium, and the spot size and
  • FIG. 1 is a schematic diagram of an embodiment of a wavelength tunable laser according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of light variation of a gain medium of a wavelength tunable laser moving downward along a vertical lens according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of another embodiment of a wavelength tunable laser according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram showing a schematic design of a wavelength selective unit mirror of a wavelength tunable laser according to an embodiment of the present invention
  • FIG. 5 is a window function diagram of a clipping effect simulation of a MEMS mirror according to an embodiment of the present invention
  • FIG. 6 is a schematic view showing a position where a main mode beam is clipped by a mirror according to an embodiment of the present invention
  • FIG. 7 is a side mode beam according to an embodiment of the present invention
  • FIG. 8 is a schematic diagram showing the relationship between the size of the mirror and the Clipping Loss of the main mode beam and the side mode beam according to the embodiment of the present invention
  • FIG. 9 is a schematic diagram of another embodiment of a wavelength tunable laser according to an embodiment of the present invention.
  • FIG. 10 is a schematic diagram of another embodiment of a wavelength tunable laser according to an embodiment of the present invention;
  • Embodiments of the present invention provide a wavelength tunable laser for adjusting a wavelength selection unit to perform a wave Long selection, simple adjustment of the optical path, easy selection of the wavelength selection process of the laser, and reduction of the required optical components, reducing costs.
  • an embodiment of a wavelength tunable laser in the implementation of the present invention includes: a gain medium 101, a lens 102, a demultiplexing unit 103, and a wavelength selecting unit 104;
  • the gain medium 101 generates a multi-longitudinal mode beam when the resonance condition reaches a laser threshold, the multi-longitudinal mode beam is a plurality of beams of different wavelengths, and the lens 102 aligns the multi-longitudinal mode beam outputted by the gain medium 101 to the demultiplexing unit 103
  • the demultiplexing unit 103 spatially separates the plurality of longitudinal mode beams into a plurality of single longitudinal mode beams, and the plurality of single longitudinal mode beams are aligned by the lens 102 to the wavelength selecting unit 104, and the wavelength selecting unit 104
  • the wavelength value is set, the mirror of the wavelength selecting unit 104 is adjusted, and the single longitudinal mode beam having the same wavelength value and the preset wavelength value is reflected back to the demultiplexing unit 103, that is, only the required specific wavelength beam is reflected back to the solution.
  • the unit 103 is multiplexed, and the light beams of other wavelength values are scattered or absorbed or projected to other directions, and the
  • the single longitudinal mode beam of the preset wavelength reflected back by the wavelength selecting unit 104 passes through the demultiplexing unit 103 and the lens 102, and returns to the gain medium 101, thereby constituting the gain medium 101 and the wavelength selecting unit 104.
  • the cavity between the resonators By setting the end surface reflectance of the gain medium 101, the optical signal of the preset wavelength selected by the wavelength selecting unit 104 reaches the threshold condition of the laser beam generation in the cavity, thereby generating laser light and outputting it.
  • the conditions for setting the end face reflectance of the gain medium will be briefly described below. Since the laser i is in the non-uniformity of the working medium in the cavity, when the light is transmitted therein, light scattering, diffraction and the like are generated, and in addition, the absorption of the light by the mirror of the cavity and the light transmission resonance
  • the cavity forms the output of light energy, which is the loss of the laser light field in the cavity. Assuming that the light is within the unit propagation distance inside the cavity, the percentage of light intensity reduced by the above reason is 03 ⁇ 4, then 03 ⁇ 4 is the internal loss factor, which is a known amount.
  • Gv is the end face reflectivity of the gain chip.
  • the reflectance of the end face mirror is 1 , P2 , and the length of the cavity is d.
  • the light intensity of the beam in the cavity of i is a round-trip light intensity /»:
  • / ⁇ is the light intensity at the light start position. To make the gain generated by the light back and forth in the working medium of the cavity enough to compensate for the loss of light during the round trip, it must be greater than or equal to / in the above equation. This gives you:
  • the above formula is the gain threshold condition of the laser oscillation. Therefore, when the end face reflectance of the gain chip is selected so that the end face reflectance Gv satisfies the above condition, laser light can be generated in the cavity. In addition, when the end face reflectance is determined, the beam with less loss in the cavity produces a laser output, while the beam of other wavelengths is suppressed due to the gain competition in the gain medium, and the laser output cannot be generated.
  • Figure 1 shows the center ray of the multi-longitudinal mode beam emitted by the gain medium, which happens to be incident perpendicularly into the center of the lens. If the gain medium moves down, the beam transmission between the various components of the tunable laser in this embodiment Referring to FIG. 2, the broken line portion in FIG. 2 represents beams of other wavelength values, wherein the gain medium 101, the lens 102, the demultiplexing unit 103, and the wavelength selecting unit 104 implement the principle and function of the tunable laser and FIG. The components shown are the same and will not be described here. In the embodiment of FIG.
  • the gain medium moving down or the vertical position of the lens deviating from the chief ray causes a change in the position of the wavelength selection unit, which can be fine-tuned by the gain medium or the mirror of the wavelength selection unit during the optical path debugging process.
  • the position is compensated, which is also an advantage of the retro-reflection structure.
  • the advantage of this optical system with a retro-reflection structure is that the beam characteristics at the output focal plane and the input focal plane are substantially the same.
  • the positional change of the optical device in the axial direction (such as the gain medium is not at the focus of the lens)
  • the beam spot that is returned and coupled into the gain medium will not match, resulting in a certain loss.
  • the compensation is adjusted during the package coupling of each part of the optical device.
  • the position of the demultiplexing unit has no influence on the laser, and the change of the angle of the demultiplexing unit causes a change in the incident angle and the diffraction angle of the light, thereby causing a change in the position of the beam spot on the wavelength selective element, and the change in the position of the spot. It can be compensated in the light path debugging.
  • the tunable laser comprises a gain medium, a demultiplexing unit, a lens, a wavelength selecting unit, and the gain medium generates a multi-longitudinal mode beam when the resonance condition reaches a laser threshold, and the collimating lens outputs a multi-longitudinal mode of the gain medium.
  • the beam is aligned until the demultiplexing unit, the demultiplexing unit demultiplexes the plurality of longitudinal mode beams into a plurality of single longitudinal mode beams, and the plurality of single longitudinal mode beams are aligned by the lens until the wavelength selecting unit, and the wavelength selecting unit is The preset wavelength value, the mirror is adjusted, and the single longitudinal mode beam having the same wavelength value and the preset wavelength value is reflected back to the demultiplexing unit, because the above retro-reflection is adopted.
  • the characteristics of the multi-longitudinal beam emitted by the gain medium such as spot size, spot position, and characteristics of the beam that has been collimated, demultiplexed, wavelength-selected, and reflected back to the gain medium
  • the beams are basically the same, which is beneficial to the beam collimation in the laser process, the installation and debugging of each device, the low cost and the adjustable effect.
  • the gain medium may be a gain chip
  • the lens may be a collimating lens
  • the demultiplexing unit may be a diffraction grating.
  • FIG. 3 Another embodiment of a tunable laser in an embodiment of the invention includes:
  • Gain chip 301 collimating lens 302, diffraction grating 303, wavelength selection unit 304;
  • the wavelength selection unit 304 may be a movable mirror; or a movable mirror array, the array is composed of a plurality of movable mirrors, each movable mirror corresponding to a longitudinal beam of a specific wavelength, or corresponding An International Telecommunication Union Telecommunication Standardization Organization standard wavelength; or a mirror set consisting of a fixed mirror combined with a rotatable mirror; or a liquid crystal on silicon (LCOS) mirror.
  • a movable mirror is described as an example, and the movable mirror is movable in the longitudinal mode beam dispersion direction.
  • a movable mirror is designed as the wavelength selecting unit 304.
  • the mirror size of the mirror is the distance between two adjacent single longitudinal mode beams among the plurality of single longitudinal mode beams obtained by demultiplexing the diffraction grating. , and the spot size projected onto the mirror of the wavelength selection unit is determined.
  • the plurality of longitudinal mode beams emitted by the gain chip 301 are separated by the diffraction grating.
  • two adjacent longitudinal mode beams with an interval of 0.1 nm are illustrated as an example.
  • the distance separating the longitudinal mode beams is related to the focal length of the lens and the dispersion performance of the diffraction grating.
  • the diffraction grating equation is:
  • d is the diffraction grating constant
  • ⁇ ' is the incident angle of light
  • e is the diffraction angle of light, which is the diffraction order and is the wavelength of the incident light.
  • the diffraction grating constant that is, the larger value required, the smaller the d value, considering the availability of the actual diffraction grating and the ease of realization of the optical path arrangement, the diffraction grating constant d is taken as 1100 lines/mm, the diffraction order
  • the value of 1 is taken as an example for explanation. It is understandable that here is only the realization of this.
  • An example of the technical solution of the present invention the implementation of the technical solution of the present invention is not limited by this example.
  • the incident angle i of two single-molecular beams with a spacing of 1 nanometer (nm.) ' is 52 degrees
  • the wavelength of the incident light is 1.5 micrometers (ran) and 1.5501 microseconds (urn).
  • the above diffraction grating equations are: i(sin 52 + sin 6 ⁇ ;) - 1 1.55
  • ⁇ 1 nano multiplication push the adjacent rebel beam on the wavelength eliminator
  • the distance ⁇ of the adjacent single longitudinal mode beams separated by the wavelength selective elements determines the achievability of the wavelength escaping.
  • the size design wavelength selection unit solves the separation distance of the two single longitudinal mode beams required according to the requirements of the wavelength selection unit.
  • the distance the movable mirror needs to move depends on the number of wavelengths to be tuned and the distance ⁇ separating the spot on the mirror. To tune 100 wavelengths, the required moving distance is lOO x ⁇
  • the movable mirror may be a MEMS (Micro Electro Mechanical System) mirror.
  • a mirror 401 is designed.
  • the shape of the mirror may be a rectangle, wherein The two sides are long enough to reflect the beam, and the mirror size of the mirror is only considered when considering the width of the mirror.
  • the main mode beam is a beam to be output equal to the preset wavelength value
  • the other longitudinal mode beam is called the side mode beam.
  • the side mode beam produces large losses due to the mirror's Clipping Loss.
  • the gain inside the gain chip is such that the output of the side mode beam is suppressed due to gain competition, thereby ensuring the high-purity single longitudinal mode output of the tunable laser.
  • the loss reduction can be expressed by the following formula:
  • FIG. 5 is a window function diagram of the subtractive effect simulation of the MEMS mirror, wherein the width of the window function depends on the width of the mirror surface, the ordinate represents the normalized power, and the power of the mirror is 1, the reflection The power outside the mirror is 0, and the abscissa indicates the position of the mirror (0 to 800 unit length).
  • Figure 6 is a schematic diagram of the position where the main mode is reduced by the mirror, which is equivalent to the light of the main mode Gaussian beam on the mirror.
  • FIG. 7 is a schematic diagram showing the position of the side mode beam mirror subtraction, corresponding to the intensity distribution of the side mode beam forming the Gaussian spot on the mirror baffle, indicating that the side mode beam is returned by the mirror, the mirror and the edge of the mirror Part of the power distribution.
  • the abscissa of Fig. 5 is expressed as the position of the mirror surface of the mirror, that is, the position of the Gaussian spot of the main mode. Since the main mode beam is to be reflected, the mirror surface of the mirror needs to be adjusted to the position of the Gaussian spot, and the longitudinal direction of Figs.
  • the axis represents the power of the beam.
  • the spot of the main mode is distributed in the middle of the mirror surface.
  • the side mode is separated from the main mode by a certain distance, and the spot of the side mode is distributed to the right of the mirror surface. The position of the spot on the mirror is different, and the portion to be subtracted is different, so that there is a difference in the loss reduction.
  • the lens focal length according to the foregoing analysis is a table of the relationship between the spatial separation distances of two adjacent single longitudinal mode beams spaced at intervals of 0.1 nm.
  • the focal length of the lens is 2 mm (mm)
  • the spatial separation distance between two adjacent single longitudinal mode beams (ie, the main mode beam and the side mode beam) of the interval of 0.5 nm is 0.55 micrometers (um).
  • the spot size of the end face of the gain chip is 1.04 um, and the spot size on the mirror is also approximately 1.04 um.
  • the specular intensity of the mirror can be calculated, and then according to the calculation formula of the loss reduction,
  • the relationship between the size of the mirror surface and the reduction loss of the main mode beam and the side mode beam is shown in Fig. 8.
  • the vertical axis of Fig. 8 represents the reduction loss, the unit is decibel UB), and the horizontal axis represents the size of the mirror surface in micrometers ( ⁇ ⁇ ), which can be derived from the loss curve of the main mode beam and the side mode beam in Fig. 8. If the loss difference between the main mode beam and the side mode beam is greater than 0.5 dB, the width of the mirror must be less than 2.7 ⁇ ⁇
  • the size of the mirror is determined according to the difference between the reduction loss of the main mode beam and the side mode beam, and the specific shape is not limited.
  • the difference in loss can be reduced in one direction of the mirror to meet the design requirements.
  • the mirror can be designed as a rectangle, only the width is determined, and the length of the other two longer sides is much larger than the width.
  • the mirror may be designed to be square, circular or elliptical, as long as the length in each direction of the mirror satisfies the difference larger than the reduction loss. Therefore, the specific shape of the mirror in the present invention is not limited.
  • the demultiplexing unit in this embodiment may also be an Arrayed Waveguide Grating (AWG), which is a waveguide integrated device, has cost advantages, is easy to batch, and is automated, and may also be a step grating and a prism, or may be Other optics that enable demultiplexing of multiple longitudinal mode beams.
  • AMG Arrayed Waveguide Grating
  • a movable mirror is employed as a wavelength selective unit, such as a MEMS mirror.
  • the size of the movable mirror surface can be determined according to the distance between two adjacent single longitudinal mode beams obtained by demultiplexing the diffraction grating, the distance between adjacent two single longitudinal mode beams, and the spot size projected onto the mirror surface of the wavelength selection unit.
  • the light of the desired wavelength is returned to the demultiplexing unit by adjusting this mirror.
  • the characteristics of the multi-longitudinal beam emitted by the gain medium such as spot size, spot position, spot angle, and beams that are collimated, demultiplexed, wavelength-selected, and reflected back to the gain medium
  • the characteristics are the same as that of the emitted beam, and the beam of a specific wavelength is selected after demultiplexing and collimation, thereby facilitating beam collimation in the laser process, installation and debugging of each device, and low cost.
  • a combination of a rotatable mirror and a fixed mirror may be used as the wavelength selection unit.
  • a rotatable mirror 902 is added between the gain chip 901 and the collimator lens 903, and the rotation is performed.
  • the mirror 902 can realize that the light beam is incident from the different angles to the diffraction grating 904, and the diffracted output specific wavelength of the light beam passes through the collimating lens 903, is focused on the fixed mirror 905, and the light beam is reflected back to the diffraction grating 904, and then returned to
  • the gain chip 901, the rotatable mirror 902 and the fixed mirror 905 in this embodiment collectively constitute a wavelength selection unit.
  • the functions of the optical elements in this embodiment are the same as those of the embodiment shown in Fig. 3, and are not specifically limited herein.
  • the incident angle of the light beam at the diffraction grating is changed, so that the diffracted output beam of a specific wavelength is reflected back to the diffraction grating by the fixed mirror, and then returned to the gain chip, and the end face of the gain chip.
  • the reflectance is pre-set so that after the beam of the specific wavelength output is resonated in the cavity, the threshold condition of the laser beam generation is reached, and the laser light is generated and output, thereby realizing the selection of the beam of a specific wavelength.
  • the tunable laser in the embodiment of the invention may further comprise a polarizing beam splitter (PBS), a polarizing slide.
  • the tunable laser can include: a gain medium, a demultiplexing unit, a collimating lens, a wavelength selecting unit, a PBS and a polarizing glass, wherein the demultiplexing unit is an Echelle grating, see FIG.
  • the linear polarized multi-mode beam emitted by the chip 1Q01 is incident on the polarizing plate 1.004 by the straight lens 1Q03 after passing through the PJ3S1002.
  • the present embodiment takes a 1/4 slide as an example.
  • the multi-longitudinal beam is incident on the 1/4 glass slide 104 and outputs elliptically polarized light. If it is 45 degrees from the optical axis, the output is Circularly polarized light. Due to the characteristics of the 1 / 4 slide, the phase is extended by ⁇ /2 and incident on the diffraction grating 1005.
  • the diffraction grating 1QQ5 is placed in a Lttrow structure, so that the diffracted beam returns along the original optical path:
  • the .1/4 slide 1 Qing 4 once again the linearly polarized beam, is twisted onto the PB ooa by the collimating lens 1003. J3 ⁇ 4 concealed Baioo3 ⁇ 4 beam ⁇ vibration state and: ⁇ beam orthogonal, after
  • the optical signal after the PBS 1002 is projected to the wavelength selective holding unit 1006 to construct an external cavity from the 3 ⁇ 4.
  • the dotted line in the figure indicates beams of other wavelength values.
  • 3 ⁇ 4 long selection unit 1006 reflects back a certain frequency of the longitudinal mode beam return, ⁇ ⁇ produces aeronautical light can be tuned by the wavelength selection list 0 1Q06 to achieve the output 3 ⁇ 4 long tone: harmonic.
  • the excellent method of the Weng Shi method is that the step grating can be used to install the Littrow structure, so that the diffracted beam is covered back in the incident direction: the continuation is relatively compact.
  • the adjustable illuminator is narrow: # ⁇ :
  • demultiplexing unit To demultiplexing unit ;
  • the multi-longitudinal beam of the increased medium is recorded by collimating the rust to the demultiplexing unit, and the demultiplexing unit demultiplexes the multiple longitudinal modes 3 ⁇ 4 beam into multiple single longitudinal mode beams.
  • the straight lens is up until the wavelength selection unit is increased: the same side of the medium and the wavelength unit of the collimating lens ;
  • the wavelength selection unit in the present embodiment may be a combination of a movable mirror, a mirror array, a silicon germanium liquid crystal mirror array, a fixed mirror and a rotatable mirror;
  • the gain medium may be a gain chip
  • the demultiplexing unit may be a diffraction grating, an arrayed waveguide grating, a medium step grating, and a prism.
  • the demultiplexing unit can be a diffraction grating, an array, a grating, a step grating, a prism.
  • the wavelength of the desired wavelength is preset, and the preset wavelength value is adjusted to reflect the mirror.
  • the single longitudinal mode beam of the plurality of single longitudinal mode beams and the same wavelength value is reflected back to the demultiplexing unit.
  • the wavelength of the wavelength of the single-wei mirror surface is determined according to the spot size of the single-single longitudinal mode, or the loss of the root-to-mode beam and the side mode spring: the consumption difference is determined.
  • the size of the array is at least the product of the number of wavelengths to be tuned and the distance of the opening.
  • wavelength selection process For a specific implementation of the wavelength selection process, refer to the related description in the foregoing implementation shown in FIG. 3, and the description of the related content designed in FIG. 4 to FIG. 8 , and the implementation of each optical unit and component function in the embodiment. , and the forward fan: : 3 dances in the dimension of the fans, and Figure 4 to. Figure 8 designed by the Xiangguan content: full of contrast; here 3 ⁇ 4.
  • the wavelength selection unit H&demultiplexed sheep element is used to obtain: a plurality of single beams obtained by the preset 3 ⁇ 4 long value adjustment mirror, and the length value and the preset are set.
  • the single longitudinal mode beam with the same wavelength value is reflected back to the mirror surface size of the demultiplexing unit, and is determined according to the size of the spot size, and the market is sold:
  • the selection of the wavelength because the light path is simple,: less optical components, simple anti-rust teaching, making the wavelength of the tuned lighter easy to make, destroy the
  • the above is the same as the hair:
  • the town is sparse and a kind of light: ⁇ and ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

L'invention concerne un laser accordable en longueur d'onde et un procédé de sélection de longueur d'onde pour laser accordable, qui est utilisé pour sélectionner des longueurs d'onde en ajustant une unité de sélection de longueur d'onde, de telle sorte que le processus de sélection de la longueur d'onde du laser peut être mis en œuvre facilement, que le nombre des éléments optiques est réduit et que les coûts sont abaissés. Dans les modes de réalisation de la présente invention, le procédé comprend : un milieu de gain, une unité de démultiplexage, une lentille et une unité de sélection de longueur d'onde; la lentille collimate un faisceau à multiples modes longitudinaux produit par le milieu de gain vers l'unité de démultiplexage; l'unité de démultiplexage démultiplexe le faisceau en une pluralité de faisceaux à mode longitudinal unique; la lentille collimate la pluralité de faisceaux à mode longitudinal unique démultiplexés par l'unité de démultiplexage vers l'unité de sélection de longueur d'onde; l'unité de sélection de longueur d'onde ajuste un miroir en fonction d'une valeur de longueur d'onde prédéterminée et réfléchit le faisceau à mode longitudinal unique, dont la valeur de longueur d'onde est identique à la valeur de longueur d'onde prédéterminée, vers l'unité de démultiplexage et le milieu de gain.
PCT/CN2011/079271 2011-09-02 2011-09-02 Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable WO2012149721A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2011800022414A CN102439804A (zh) 2011-09-02 2011-09-02 一种波长可调激光器及可调激光器的波长选择方法
PCT/CN2011/079271 WO2012149721A1 (fr) 2011-09-02 2011-09-02 Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2011/079271 WO2012149721A1 (fr) 2011-09-02 2011-09-02 Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable

Publications (1)

Publication Number Publication Date
WO2012149721A1 true WO2012149721A1 (fr) 2012-11-08

Family

ID=45986250

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/079271 WO2012149721A1 (fr) 2011-09-02 2011-09-02 Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable

Country Status (2)

Country Link
CN (1) CN102439804A (fr)
WO (1) WO2012149721A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150077853A1 (en) * 2013-09-17 2015-03-19 Chaozhi Wan Single-Longitudinal Mode Laser with High Resolution Filter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103034011B (zh) * 2012-12-03 2015-01-28 华中科技大学 一种硅基液晶光滤波器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6529542B1 (en) * 2000-04-04 2003-03-04 Aculight Corporation Incoherent beam combined optical system utilizing a lens array
CN2687911Y (zh) * 2003-12-31 2005-03-23 南开大学 可调谐光栅外腔半导体激光器
US20090238217A1 (en) * 2008-03-21 2009-09-24 Ondax, Inc. Method and apparatus for wavelength tuning laser diodes
CN101604818A (zh) * 2009-06-30 2009-12-16 山东远普光学股份有限公司 连续无跳模可调谐光栅外腔半导体激光器
CN101826701A (zh) * 2010-05-06 2010-09-08 山东远普光学股份有限公司 一种无跳模连续调谐半导体激光器
CN202172209U (zh) * 2011-08-30 2012-03-21 华为技术有限公司 一种基于硅基液晶的外腔可调谐激光器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6529542B1 (en) * 2000-04-04 2003-03-04 Aculight Corporation Incoherent beam combined optical system utilizing a lens array
CN2687911Y (zh) * 2003-12-31 2005-03-23 南开大学 可调谐光栅外腔半导体激光器
US20090238217A1 (en) * 2008-03-21 2009-09-24 Ondax, Inc. Method and apparatus for wavelength tuning laser diodes
CN101604818A (zh) * 2009-06-30 2009-12-16 山东远普光学股份有限公司 连续无跳模可调谐光栅外腔半导体激光器
CN101826701A (zh) * 2010-05-06 2010-09-08 山东远普光学股份有限公司 一种无跳模连续调谐半导体激光器
CN202172209U (zh) * 2011-08-30 2012-03-21 华为技术有限公司 一种基于硅基液晶的外腔可调谐激光器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150077853A1 (en) * 2013-09-17 2015-03-19 Chaozhi Wan Single-Longitudinal Mode Laser with High Resolution Filter

Also Published As

Publication number Publication date
CN102439804A (zh) 2012-05-02

Similar Documents

Publication Publication Date Title
US7636376B2 (en) Method and apparatus for wavelength tuning laser diodes
US7564880B2 (en) Laser intra-cavity electronic wavelength tuner
JP5747355B2 (ja) 外部共振器レーザ
US9306369B2 (en) Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser
KR101978013B1 (ko) Oct를 위한 그리즘을 갖춘 파장-가변형 외부 캐비티 레이저 다이오드
JP5851517B2 (ja) ショートパルスファイバーレーザー
US7822096B2 (en) Alignment and wavelength selection in external cavity lasers
US7426223B2 (en) Coherent light source and optical device
CN101859975B (zh) 双波长可调谐掺铥光纤激光器
WO2017022142A1 (fr) Dispositif laser à semi-conducteur
US8929409B2 (en) External cavity tunable laser with an air gap etalon comprising wedges
KR20180016404A (ko) 가변적인 피드백 제어를 갖는 고밀도 파장 빔 결합
EP3761463A1 (fr) Résonateur optique et machine de traitement laser
EP2017929A2 (fr) Source lumineuse réglable à la longueur d'onde de type résonateur externe
US6687275B2 (en) Resonating cavity system for broadly tunable multi-wavelength semiconductor lasers
CN110989182A (zh) 一种合束光源装置
CN106033865A (zh) 一种半导体激光器及半导体激光器合束结构
WO2012149721A1 (fr) Laser accordable en longueur d'onde et procédé de sélection de longueur d'onde pour laser accordable
US20020090017A1 (en) Device and method for reduction of spontaneous emission from external cavity lasers
US20130208754A1 (en) Laser apparatus, component, method and applications
JP2015056469A (ja) 外部共振器により波長制御されたダイオードレーザモジュール
CN103004039B (zh) 一种外腔激光器
WO2012126427A2 (fr) Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation
JP2003234527A (ja) 波長可変光源装置
JP2000058950A (ja) 自由スペ―スレ―ザ

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180002241.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11864717

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11864717

Country of ref document: EP

Kind code of ref document: A1