WO2012149692A1 - 一种太阳能电池正面栅线电极的制备方法 - Google Patents

一种太阳能电池正面栅线电极的制备方法 Download PDF

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WO2012149692A1
WO2012149692A1 PCT/CN2011/073747 CN2011073747W WO2012149692A1 WO 2012149692 A1 WO2012149692 A1 WO 2012149692A1 CN 2011073747 W CN2011073747 W CN 2011073747W WO 2012149692 A1 WO2012149692 A1 WO 2012149692A1
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bonding
solar cell
silicon wafer
pressing head
preparing
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French (fr)
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夏洋
沈泽南
刘邦武
李超波
李勇滔
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Institute of Microelectronics of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of preparation of a crystalline silicon solar cell, and in particular to a method for preparing a front gate electrode of a solar cell. Background technique
  • a solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect.
  • Solar photovoltaic power generation will occupy an important seat in the world's energy consumption in the near future, not only to replace some of the conventional energy, but also to become the main body of the world's energy supply. Efficient and low cost has become an important goal for the development of solar cells.
  • the front gate line In order to obtain a high-efficiency solar cell, the front gate line has a reduced light-shielding area and an efficient charge collection capability, so the preparation of the front gate line of the solar cell is particularly important.
  • the preparation of the front gate electrode of the crystalline silicon solar cell generally adopts a screen printing process, and the prepared gate line has a width of more than 80 micrometers and a height of 5 to 30 micrometers, and a wide grid line has a large light-shielding area, which affects light absorption; After the gate line is thinned, the height of the gate line is lowered, and the ohmic contact resistance of the battery is large, which limits the current collecting ability and reduces the conversion efficiency of the solar cell. Therefore, in order to obtain a battery with high conversion efficiency, the width of the gate line must be reduced, and the aspect ratio of the gate line must be increased.
  • the conventional screen printing process has been difficult to achieve.
  • the silver paste used in the screen printing process is mainly composed of silver powder particles, an inorganic phase and an organic carrier.
  • the silicon wafer needs to be rapidly sintered in a sintering furnace to form a silver electrode.
  • the silver electrode and the silicon reach the eutectic temperature, the crystalline silicon atoms are incorporated into the silver electrode in a certain ratio to form an ohmic contact.
  • the size, distribution ratio and sintering process of the silver powder in the silver paste will be ohmic The resistance has a large influence, so poor quality silver paste or improper sintering process will increase the series resistance of the electrode and reduce the conversion efficiency of the solar cell. Summary of the invention
  • the present invention provides a novel solar cell front gate line electrode preparation method.
  • the silicon wafer and the metal grid line are respectively fixed on the lower pressing head and the upper pressing head of the bonding machine, and the metal grid line and the silicon wafer are bonded together by direct bonding to obtain the solar cell grid line electrode. .
  • the invention provides a method for preparing a front surface gate electrode of a solar cell, wherein the method specifically fixes a silicon wafer and a metal grid line on a lower pressing head and an upper pressing head of a bonding device, respectively, by direct bonding The metal gate line is bonded to the silicon wafer.
  • the method specifically includes:
  • the process parameters of the bonding apparatus include the degree of vacuum of the bonding chamber, the temperature of the bonding material, and the bonding energy.
  • the step of adjusting the process parameter of the bonding device to enter a preset value range of the direct bonding process condition specifically includes:
  • the preset bonding temperature ranges from 20 to 1000 ° C;
  • the force applied by the upper ram to the lower ram is controlled to bring the bonding energy into a preset bonding energy range, and the predetermined bonding energy ranges from 10 to 10000 mJ/m 2 .
  • the bonding device is a bonding machine; the bonding machine includes a bonding cavity and a bonding component; the bonding component includes the upper pressing head and the lower pressing head; the upper pressing head includes a force console a heating station and a grid clamp; the force console is configured to control a force applied by the upper pressing head to the lower pressing head to provide bonding energy; the heating stage is configured to heat the bonding material to provide bonding a grid clamp for fixing the metal grid to the upper indenter; the lower indenter includes a silicon wafer holder and a platform; the silicon fixture is for fixing the silicon wafer On the lower ram, the platform is used to carry the force applied during bonding.
  • the bonding machine also includes a monitoring device for detecting the quality of the grid wire bonding in real time.
  • the monitoring device is an infrared transmission detector.
  • the silicon wafer is monocrystalline or polycrystalline silicon.
  • the metal gate lines are A 1 and A 1 alloy wires, or Ag and Ag alloy wires, or Cu and Cu alloy wires.
  • the metal grid lines are circular, square or rectangular in shape and have a diameter ranging from 10 to 80 ⁇ m.
  • the invention overcomes the bottleneck of the screen printing process by the direct bonding process, can prepare a gate line electrode with good aspect ratio on the silicon wafer, improves the light absorption and current collecting capability of the solar cell, and converts the solar cell. Efficiency and production efficiency.
  • FIG. 1 is a schematic structural view of a bonding machine for preparing a front gate electrode of a solar cell according to an embodiment of the present invention
  • FIG. 2 is a flow chart of a method for preparing a front gate electrode of a solar cell by using a direct bonding process according to an embodiment of the present invention
  • 3 is a flow chart of a method for preparing a front gate electrode of a solar cell by adjusting a direct bonding process condition according to an embodiment of the present invention.
  • the present invention provides a method for preparing a front gate electrode of a solar cell by using a direct bonding process, which comprises placing the processed silicon wafer into a bonding machine cavity, using a direct bonding method, at a preset temperature and Under the action of pressure, the metal grid wire is bonded to the silicon wafer to obtain the front gate electrode of the solar cell.
  • the present embodiment provides a method for preparing a solar cell front gate electrode using a direct bonding process, comprising the following steps:
  • Step 101 The processed silicon wafer is placed in a cavity of the bonding machine, and is fixed on the lower pressing head of the bonding machine by a silicon wafer clamp;
  • the bonding machine used in this embodiment includes a bonding cavity and a bonding component; the bonding component includes an upper pressing head and a lower pressing head, and the upper pressing head includes a force console, a heating table, and a grid wire fixture;
  • the bonding force is provided by controlling the force applied to the lower pressing head by the upper pressing head; the heating stage is used for heating the bonding material to provide the bonding temperature; the grid line clamp is used for fixing the metal grid line on the upper pressing head; the lower pressing head Including silicon wafer fixture and platform; silicon wafer fixture is used to fix the silicon wafer on the lower pressing head, and the platform is used to carry the force applied during bonding; in practical applications, the vacuum degree of the bonding environment in the bonding cavity can be set. , providing a clean bonding environment for the bonding process; performing the entire bonding process in a vacuum environment by a preset bonding vacuum;
  • the silicon wafer in this embodiment may be single crystal silicon, polycrystalline silicon, single crystal silicon grown with an antireflection film or polycrystalline silicon grown with an antireflection film;
  • the silicon wafer shape may be a conventional shape such as a circle, a square or a rectangle;
  • Step 102 Fix the metal grid line to be bonded to the upper pressing head of the bonding machine through the grid wire clamp;
  • the material of the metal gate line may be an A1 and A1 alloy wire, or an Ag and Ag alloy wire, or a Cu and Cu alloy wire, etc.;
  • the metal gate wire may have a circular, square or rectangular shape and a diameter of 10 -80 ⁇ , the length depends on the size of the silicon wafer;
  • Step 103 Adjust the direct bonding process parameters of the bonding machine to achieve the working condition of directly bonding the front gate electrode of the solar cell;
  • the direct bonding process parameters of the bonding machine include the vacuum degree of the bonding cavity, the bonding material temperature and the bonding energy; the vacuum degree of the bonding cavity can be set in the range of 1 (T 3 Pa ⁇ 10 5 Pa, The better vacuum degree can be set according to the actual bonding effect; the temperature of the bonding material is set at 20-1000. C, the bonding energy is 10-10000 mJ/m 2 ; during the bonding process, the detection key can be passed.
  • Step 104 After the direct bonding process parameter is adjusted to the preset direct bonding working range, the metal grid line is pressed onto the silicon wafer by the bonding upper pressing head of the bonding machine; at a certain high temperature and the key Under the capability, the metal gate line and the silicon wafer are directly bonded together to obtain the front gate electrode of the solar cell;
  • the bonder can also include a monitoring device that monitors the bonding conditions within the bonding chamber, such as an infrared transmission detector, for detecting the quality of the grid bond in real time.
  • a monitoring device that monitors the bonding conditions within the bonding chamber, such as an infrared transmission detector, for detecting the quality of the grid bond in real time.
  • the infrared transmission detector can be used to detect in real time whether the bonding strength of the front gate electrode of the solar cell reaches the bonding strength requirement.
  • the bonding energy can be adjusted again by the force console until the bonding energy reaches the target bonding effect, thereby preparing the solar cell front gate line. electrode.
  • Step 302 The vacuuming system of the bonding machine extracts the gas in the bonding cavity
  • Step 304 The vacuum detecting device detects whether the degree of vacuum in the bonding chamber enters a preset vacuum range, and if so, step 306 is performed, otherwise step 302 is performed;
  • the vacuum bonding chamber is preset 10- 2 Pa ⁇ 10Pa;
  • Step 306 heating the bonding material on the heating platform on the bonding machine
  • Step 308 The temperature detecting device detects whether the bonding temperature in the bonding cavity reaches the preset temperature value of the bonding material, and if so, step 310 is performed, otherwise step 306 is performed;
  • the temperature of the bonding material is preset to 300-400. C;
  • Step 310 bonding the metal grid wire to the silicon wafer on the lower pressing head through the upper pressing head of the bonding machine;
  • Step 312 The infrared transmission detector detects whether the bonding strength reaches the preset value of the bonding strength, and if so, executing Step 316, otherwise step 314 is performed;
  • Step 314 The infrared transmission detector detects whether the bonding strength is greater than the preset value of the bonding strength, and if so, step 320 is performed, otherwise step 318 is performed;
  • Step 316 Prepare the solar cell front gate electrode by direct bonding, and the bonding ends; Step 318: Adjust the bonding energy through the bonding force console, and perform step 310;
  • Step 320 The bonding strength is too large, causing the gate electrode preparation to fail and the bonding to end.
  • the embodiment of the invention adopts a direct bonding mode, so that the surface characteristics of the gate line are superior to those of the screen printing, and the gate line size is easy to control, and an ideal gate line aspect ratio can be obtained, thereby improving the light absorption and charge collection capability of the solar cell.
  • the embodiment of the invention adopts a direct bonding manner, so that the prepared gate line has a lower temperature than the screen printing temperature in the subsequent co-sintering, and the energy consumption is reduced.

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Abstract

一种太阳能电池正面栅线电极的制备方法，属于晶硅太阳能电池制备技术领域。所述方法具体是将硅片和金属栅线分别固定于键合机的下压头和上压头上，通过直接键合的方式将所述金属栅线与硅片键合为一体。本发明通过直接键合工艺，克服了丝网印刷工艺的瓶颈，能够在硅片上制备出良好高宽比的栅线电极，提高了太阳能电池的光吸收和电流收集能力，以及太阳能电池的转化效率和生产效益。

Description

一种太阳能电池正面栅线电极的制备方法
技术领域
本发明涉及晶硅太阳能电池制备技术领域， 特别涉及一种太阳能电池正面 栅线电极的制备方法。 背景技术
太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装 置。 太阳能光伏发电在不远的将来会占据世界能源消费的重要席位， 不但要替 代部分常规能源， 而且将会成为世界能源供应的主体。 高效、 低成本已成为太 阳能电池发展的重要目标。 为了获得高效太阳能电池， 正面栅线的遮光面积要 减小， 同时又要具备高效的电荷收集能力， 因此太阳能电池正面栅线的制备显 得尤其重要。
目前， 晶硅太阳能电池正面栅线电极的制备一般采用丝网印刷工艺， 制备 的栅线宽度在 80微米以上， 高度为 5 ~ 30微米， 较宽的栅线遮光面积大， 影响 光吸收； 但是栅线变细后， 栅线的高度会降低， 电池的欧姆接触电阻大， 限制 了电流的收集能力， 降低了太阳能电池的转化效率。 所以， 要获得高转化效率 的电池， 必须减小栅线宽度， 提高栅线的高宽比， 传统的丝网印刷工艺已经很 难做到。
另外， 丝网印刷工艺中使用的银浆主要由银粉颗粒、 无机相和有机载体组 成， 经过丝网印刷后的硅片， 需要经过烧结炉快速烧结才能形成银电极。 当银 电极与硅达到共晶温度时， 晶体硅原子就会以一定的比例融入到银电极中， 形 成欧姆接触。 由于银浆中的银粉颗粒大小、 成分配比以及烧结工艺都会对欧姆 电阻有较大影响， 因此质量差的银浆或者不合适的烧结工艺都会增加电极的串 联电阻， 降低太阳能电池的转换效率。 发明内容
为了解决现有太阳能电池栅线制备工艺中由光吸收率低导致的太阳能电池 转换效率降低的问题， 本发明提供了一种新的太阳能电池正面栅线电极的制备 方法。 该方法是将硅片和金属栅线分别固定于键合机的下压头和上压头上， 通 过直接键合的方式将金属栅线与硅片键合为一体， 得到太阳能电池栅线电极。
本发明提供了一种太阳能电池正面栅线电极的制备方法， 所述方法具体是 将硅片和金属栅线分别固定于键合装置的下压头和上压头上， 通过直接键合方 式将所述金属栅线与硅片键合为一体。
所述方法具体包括：
将硅片和金属栅线分别固定于键合装置的下压头和上压头上；
调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围； 所述上压头通过直接键合方式将所述金属栅线压制于所述硅片上。
所述键合装置的工艺参数包括键合腔体的真空度、 键合材料温度和键合能 量。
所述调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围的 步骤具体包括：
抽取所述键合装置内的气体， 使所述键合装置内的压强进入预先设置的键 合真空度参数范围内， 所述预先设置的真空度参数范围为 1 0— 3Pa ~ 1 05Pa ;
加热所述键合装置， 使所述键合装置内的温度进入预先设置的键合温度范 围内， 所述预先设置的键合温度范围为 20_1000°C;
控制所述上压头施加于所述下压头的力， 使键合能量进入预先设置的键合 能量范围内， 所述预先设置的键合能量范围为 10-10000mJ/m2。
所述键合装置为键合机； 所述键合机包括键合腔体和键合部件； 所述键合 部件包括所述上压头和下压头； 所述上压头包括力控制台、 加热台和栅线夹具； 所述力控制台用于控制所述上压头施加于所述下压头的力， 提供键合能量； 所 述加热台用于加热键合材料， 提供键合温度； 所述栅线夹具用于固定所述金属 栅线于所述上压头上； 所述下压头包括硅片夹具和平台； 所述硅片夹具用于固 定所述硅片于所述下压头上， 所述平台用于承载键合时施加的力。
所述键合机还包括监控设备， 用于实时检测栅线键合的质量。
所述监控设备为红外透射检测仪。
所述硅片为单晶硅或多晶硅。
所述金属栅线为 A 1及 A 1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu合金线。 所述金属栅线的形状为圓形、 方形或矩形， 直径范围为 1 0-80μηι。
与现有技术相比， 本发明的上述技术方案的有益效果如下：
本发明通过直接键合工艺， 克服了丝网印刷工艺的瓶颈， 能够在硅片上制 备出良好高宽比的栅线电极， 提高了太阳能电池的光吸收和电流收集能力， 以 及太阳能电池的转化效率和生产效益。 附图说明
图 1是本发明实施例制备太阳能电池正面栅线电极的键合机结构示意图； 图 2是本发明实施例利用直接键合工艺制备太阳能电池正面栅线电极的方 法流程图； 图 3 是本发明实施例调整直接键合工艺条件制备太阳能电池正面栅线电极 的方法流程图。 具体实施方式
为了深入了解本发明， 下面结合附图及具体实施例对本发明进行详细说明。 本发明提供了一种利用直接键合工艺制备太阳能电池正面栅线电极的方 法， 该方法是将处理后的硅片放入键合机腔体内， 采用直接键合方式， 在预先 设置的温度和压力作用下把金属栅线键合于硅片上面， 得到太阳能电池正面栅 线电极。
参见图 1和图 2,本实施例提供了一种利用直接键合工艺制备太阳能电池正 面栅线电极的方法， 包括以下步骤：
步骤 101: 将处理后的硅片放置于键合机腔体内， 通过硅片夹具固定于键合 机下压头上；
本实施例使用的键合机包括键合腔体和键合部件； 键合部件包括上压头和 下压头， 上压头包括力控制台、 加热台和栅线夹具等； 力控制台用于控制上压 头施加于下压头的力， 提供键合能量； 加热台用于加热键合材料， 提供键合温 度； 栅线夹具用于固定金属栅线于上压头上； 下压头包括硅片夹具和平台； 硅 片夹具用于固定硅片于下压头上， 平台用于承载键合时施加的力； 在实际应用 中， 可设置键合腔体中键合环境的真空度， 为键合过程提供洁净的键合环境； 通过预先设置的键合真空度， 使整个键合过程在真空环境内进行；
本实施例中的硅片可以为单晶硅、 多晶硅、 生长有减反膜的单晶硅或生长 有减反膜的多晶硅； 硅片形状可以为圓形、 方形或矩形等常规形状；
步骤 102: 将待键合的金属栅线通过栅线夹具固定于键合机的上压头上； 本实施例中金属栅线的材料可以为 A1及 A1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu合金线等； 金属栅线的形状可以为圓形、 方形或矩形， 尺寸直径为 10-80μιη, 长度根据硅片尺寸而定；
步骤 103: 调整键合机的直接键合工艺参数， 使之达到直接键合太阳能电池 正面栅线电极的工作条件；
键合机的直接键合工艺参数包括键合腔体的真空度、 键合材料温度和键合 能量； 键合腔体的真空度可以设定在 l(T3Pa ~ 105Pa范围内， 更优的真空度可以 根据实际键合效果来设置； 键合材料的温度设定在 20-1000。C , 键合能量在 10-10000mJ/m2; 在键合的过程中， 可以通过检测键合金属栅线的强度等参数来 调整直接键合的工艺参数范围； 由于直接键合工艺参数在一定范围内可以相互 影响， 因此可以根据实际键合效果作相应调整使之达到最优的键合工艺参数； 步骤 104: 在直接键合工艺参数调整至预设直接键合工作范围内之后， 通过 键合机的键合上压头将金属栅线压制于硅片上； 在一定的高温和键合能下， 金 属栅线与硅片直接键合在一起， 得到太阳能电池正面栅线电极；
在具体实践中， 键合机还可以包括监测键合腔体内键合条件的监控设备， 例如红外透射检测仪， 用于实时检测栅线键合的质量。 在金属栅线与硅片的直 接键合过程中， 可以通过红外透射检测仪实时检测太阳能电池正面栅线电极的 键合强度是否达到键合强度要求。 当键合能量不够而使得键合强度未达到键合 强度要求时， 可通过力控制台调整键合能量再次键合， 直到键合能量达到目标 键合效果为止， 从而制备得到太阳能电池正面栅线电极。
在利用本实施例的直接键合法制备太阳能电池正面栅线电极的过程中， 调 整直接键合的工艺参数对最终获得优质太阳能电池正面栅线电极非常重要。 下 面给出了本实施例步骤 103和 104中调整直接键合工艺参数和键合过程的具体 执行步骤， 如图 3所示：
步骤 302: 键合机的抽真空系统抽取键合腔体内的气体；
步骤 304:真空度检测装置检测键合腔体内的真空度是否进入预设定的真空 度范围， 如果是， 则执行步骤 306, 否则执行步骤 302;
本实施例中， 键合腔体内的真空度预设值为 10—2Pa ~ 10Pa;
步骤 306: 键合机上的加热台加热键合材料；
步骤 308:温度检测装置检测键合腔体内的键合温度是否达到键合材料的温 度预设值， 如果是， 则执行步骤 310, 否则执行步骤 306;
本实施例中， 键合材料的温度预设值为 300-400。C;
步骤 310: 通过键合机上压头将金属栅线键合于下压头上的硅片上； 步骤 312:红外透射检测仪检测键合强度是否达到键合强度预设值，如果是， 则执行步骤 316, 否则执行步骤 314;
实际应用中， 可以通过检查键合材料内的空洞形状和大小是否在允许范围 内来判断键合强度是否达到键合强度预设值；
步骤 314:红外透射检测仪检测键合强度是否大于键合强度预设值，如果是， 则执行步骤 320, 否则执行步骤 318;
步骤 316: 利用直接键合方式制备太阳能电池正面栅线电极， 键合结束； 步骤 318: 通过键合力控制台调整键合能量， 执行步骤 310;
步骤 320: 键合强度过大， 导致栅线电极制备失败， 键合结束。
本发明实施例采用直接键合方式， 使得栅线表面结特性优于丝网印刷， 栅 线尺寸易于控制， 可以获得比较理想的栅线高宽比， 提高了太阳能电池的光吸 收和电荷收集能力； 本发明实施例采用直接键合方式， 使得制备的栅线在后续 共烧结时所需温度比丝网印刷的温度低， 降低了能耗。 以上所述的具体实施方式， 对本发明的目的、 技术方案和有益效果进行了 进一步详细说明， 所应理解的是， 以上所述仅为本发明的具体实施方式而已， 并不用于限制本发明， 凡在本发明的精神和原则之内， 所做的任何修改、 等同 替换、 改进等， 均应包含在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种太阳能电池正面栅线电极的制备方法， 其特征在于， 所述方法具体 是将硅片和金属栅线分别固定于键合装置的下压头和上压头上， 通过直接键合 方式将所述金属栅线与硅片键合为一体。
2、如权利要求 1所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述方法具体包括：
将硅片和金属栅线分别固定于键合装置的下压头和上压头上；
调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围； 所述上压头通过直接键合方式将所述金属栅线压制于所述硅片上。
3、如权利要求 2所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合装置的工艺参数包括键合腔体的真空度、 键合材料温度和键合能量。
4、如权利要求 3所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围的步骤 具体包括：
抽取所述键合装置内的气体， 使所述键合装置内的压强进入预先设置的键 合真空度参数范围内， 所述预先设置的真空度参数范围为 l(T3Pa ~ 105Pa;
加热所述键合装置， 使所述键合装置内的温度进入预先设置的键合温度范 围内， 所述预先设置的键合温度范围为 20-1000°C;
控制所述上压头施加于所述下压头的力， 使键合能量进入预先设置的键合 能量范围内， 所述预先设置的键合能量范围为 10-10000mJ/m2。
5、如权利要求 4所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合装置为键合机； 所述键合机包括键合腔体和键合部件； 所述键合部件 包括所述上压头和下压头； 所述上压头包括力控制台、 加热台和栅线夹具； 所 述力控制台用于控制所述上压头施加于所述下压头的力， 提供键合能量； 所述 加热台用于加热键合材料， 提供键合温度； 所述栅线夹具用于固定所述金属栅 线于所述上压头上； 所述下压头包括硅片夹具和平台； 所述硅片夹具用于固定 所述硅片于所述下压头上， 所述平台用于承载键合时施加的力。
6、如权利要求 5所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合机还包括监控设备， 用于实时检测栅线键合的质量。
7、如权利要求 6所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述监控设备为红外透射检测仪。
8、 如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述硅片为单晶硅或多晶硅。
9、 如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述金属栅线为 A1及 A1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu 合金线。
10、如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述金属栅线的形状为圓形、 方形或矩形， 直径范围为 10-80μιη。
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