WO2012144420A1 - Silicon solar cell and manufacturing method for same - Google Patents

Silicon solar cell and manufacturing method for same Download PDF

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WO2012144420A1
WO2012144420A1 PCT/JP2012/060044 JP2012060044W WO2012144420A1 WO 2012144420 A1 WO2012144420 A1 WO 2012144420A1 JP 2012060044 W JP2012060044 W JP 2012060044W WO 2012144420 A1 WO2012144420 A1 WO 2012144420A1
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layer
type silicon
type
cell
silicon layer
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誠 小長井
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国立大学法人東京工業大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a silicon solar cell and a method for manufacturing the same.
  • Thin film silicon solar cells are generally multi-junctioned for high efficiency.
  • the conventional two-junction cell is made of glass / transparent surface electrode / p-type thin film silicon layer of the first cell / i-type thin film silicon layer of the first cell / n-type thin film silicon layer of the first cell / intermediate layer / second layer. It is composed of two p-type thin film silicon layers / second cell i-type thin film silicon layer / second cell n-type thin film silicon layer / transparent back electrode / reflection metal back electrode.
  • As the intermediate layer n-type microcrystalline SiO x is usually used.
  • the n-type thin film silicon layer does not contribute to the generation of current, and there is an absorption loss.
  • free carrier absorption by boron exists in the ZnO film which is a transparent back electrode.
  • An object of the present invention is to improve the efficiency by reducing the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increasing the photocurrent in the silicon solar cell.
  • a cell layer having one or more unit cells composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and an electrode layer is formed on one side of the cell layer on the substrate side
  • the seed layer has a thickness of 1 to 500 nm and a crystallinity of 40% or more; and the n-type silicon layer has n-type Si x M 1-x : H
  • M is A silicon solar cell characterized by being O, N or C, containing 0 ⁇ x ⁇ 1), having a film thickness of 40 to 500 nm and a crystallinity of 10% or more.
  • the n-type silicon layer has a refractive index at a wavelength of 500 nm of 2.5 or less, an optical coefficient of absorption of 10 ⁇ 4 / cm and an optical band gap of 2.5 eV or more. Silicon solar cells. (3) The silicon solar cell according to (1) or (2), wherein the n-type silicon layer contains microcrystalline Si: H, a-Si, and Si x M 1-x : H.
  • a cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on the substrate, and an electrode layer is formed on one side of the cell layer on the substrate side,
  • i-type microcrystalline Si: H is included between the i-type silicon layer and the n-type silicon layer.
  • a seed layer is provided, and as the n-type silicon layer, an O source, N source, or C source material gas / silicon source material flow rate ratio is adjusted as appropriate so that the refractive index at a wavelength of 500 nm is 2.5 or less and optical Of a silicon solar cell characterized by forming an n-type Si x M 1-x : H (M is O, N or C and 0 ⁇ x ⁇ 1) having a typical band gap of 2.5 eV or more Method.
  • the present invention in a silicon solar cell, it is possible to reduce the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increase the photocurrent to improve efficiency.
  • the voltage-current characteristic of the 2 junction type cell by this invention and a prior art is shown.
  • 2 shows the collection efficiency of a two-junction cell according to the present invention and the prior art.
  • a cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and the cell layer has a substrate side on one side.
  • a counter electrode layer is formed on one side of the electrode layer and cell layer opposite to the substrate.
  • a seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer, and the n-type silicon layer is n-type Si x M 1-x : H (M is O, N Or it is C and contains 0 ⁇ x ⁇ 1).
  • a material having transparency in at least the visible light wavelength region such as a glass substrate and a plastic substrate
  • a glass substrate and a plastic substrate can be applied.
  • a soda-lime glass substrate, an aminosilicate glass substrate, a borosilicate glass substrate, and the like are suitable.
  • an uneven shape can be formed on the substrate surface by a conventional method.
  • the transparent conductive film formed as an electrode layer on the substrate is preferably a film containing zinc oxide, tin oxide or indium oxide, and zinc oxide (ZnO) has high translucency and low resistivity. Therefore, it is particularly suitable.
  • the transparent conductive film can be formed by, for example, the MOCVD method, the sputtering method, or the like.
  • the thickness of the transparent conductive film is preferably 500 to 3000 nm.
  • the thin film solar cell of the present invention has a cell layer having one or more unit cells composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer, and crystalline or amorphous may be used as silicon.
  • a unit cell is formed by sequentially stacking a p-type layer, an i-type layer and an n-type silicon thin film on a transparent conductive film.
  • the unit cell includes silicon-containing gas (Si source) such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas (carbon source) such as methane (CH 4 ), Oxygen-containing gas (oxygen source) such as carbon dioxide (CO 2 ), nitrogen-containing gas (nitrogen source) such as nitrogen (N 2 ), ammonia (NH 3 ), nitrous oxide (N 2 O), diborane (B 2 It is formed by a conventional method such as MOCVD using a mixed gas in which a p-type dopant gas such as H 6 ), an n-type dopant gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) are mixed. Can do.
  • Si source silicon-containing gas
  • carbon source such as methane (CH 4 )
  • Oxygen-containing gas (oxygen source) such as carbon dioxide (CO 2 )
  • a seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer.
  • the seed layer preferably has a thickness of 1 to 500 nm and a crystallinity of 40% or more.
  • the n-type silicon layer is n-type Si x M 1-x : H (M is O, N or C, and 0 ⁇ x ⁇ 1). including.
  • the n-type silicon layer of the present invention typically contains microcrystalline Si: H, a-Si and Si x M 1-x : H.
  • the n-type silicon layer preferably has a film thickness of 40 to 500 nm and a crystallinity of 10% or more.
  • the n-type silicon layer also serves as a reflective layer, and has an optical band gap of 2.5 eV or more with a refractive index of 2.5 or less at a wavelength of 500 nm and an absorption coefficient of 10 ⁇ 4 / cm. Is preferable from the viewpoint of the light confinement effect.
  • Such an n-type silicon layer has a refractive index at a wavelength of 500 nm of n-type Si x M 1-x : H obtained by appropriately adjusting the O source, N source or C source material gas / silicon source material flow rate ratio. Is not more than 2.5 and the optical band gap is preferably not less than 2.5 eV.
  • O source material gas / silicon source material for example, CO 2 / SiH 4
  • a counter electrode layer is formed on the last n layers of the cell layer.
  • various known metal oxides and electrode materials such as metals can be used, but it is preferable to use a highly reflective metal because light can be confined in the unit cell.
  • silver, aluminum, nickel, chromium, or the like can be used as the metal, and the metal can be formed by vapor deposition, sputtering, or the like.
  • an i-type seed layer (neutral type microcrystal and crystal promotion layer) with low absorption loss is formed before the conventional “intermediate layer”, and the n-layer of the cell has a specific composition
  • the absorption loss can be reduced, and the short-circuit current and the overall efficiency of the multi-junction cell can be improved to increase the efficiency.
  • the conventional “intermediate layer” serving as the reflective layer is also used as the n layer of the cell, or the conventional “intermediate layer” is omitted from between the unit cells.
  • Example 1 First, a 0.7 mm thick Corning # 7059 glass substrate was washed with acetone and ethanol solutions for 10 minutes, respectively. Next, the substrate was dried, and a ZnO film as a transparent conductive film was formed by MOCVD (Metal Organic Chemical Vapor Deposition) method. A glass substrate was placed on a substrate holder heated to 155 ° C., the reaction tube of the MOCVD apparatus was closed, and the reaction tube was evacuated. Subsequently, argon gas was allowed to flow so that the pressure in the reaction tube was set at 3 Torr and held for 10 minutes.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • argon gas was passed through a bubbler containing H 2 O and diethyl zinc (DEZ), and H 2 O, DEZ and diborane gas (B 2 H 6 ) were allowed to flow into the reaction tube.
  • the H 2 O, DEZ and B 2 H 6 flow rates used are 281 mmol / min, 100 mmol / min and 0.26 mmol / min, respectively.
  • the holding temperatures of the bubblers containing H 2 O and DEZ are 20 ° C. and 40 ° C., respectively.
  • the thickness of the deposited ZnO film and its RMS were about 1500 nm and 70 nm, respectively.
  • the above ZnO substrate was put into a reaction tube for sample intake of a CVD device and evacuated, and then the substrate was transferred to a reaction tube for forming a p layer and placed on a substrate holder electrode set at 200 ° C.
  • the conditions for forming each layer are shown in Table 1 (“power” is a high-frequency output).
  • SiH 4 , monomethylsilane (MMS), H 2, and B 2 H 6 gases for forming the p layer were flowed, and the gas pressure was maintained at 70 Pa.
  • a high frequency of 13.56 MHz was applied to the electrode to deposit a p-layer.
  • the high frequency and each gas were stopped and evacuated, and transferred to the i-layer forming reaction tube to deposit the i-layer.
  • SiH 4 and H 2 gases for forming the i layer were flowed, and the gas pressure was maintained at 50 Pa.
  • a high frequency of 60 MHz was applied to the electrode to deposit the i layer.
  • the high frequency and each gas were stopped and evacuated, and transferred to an n-layer forming reaction tube to deposit a seed layer and an n-layer.
  • SiH 4 and H 2 gases for seed layer formation were flowed, and the gas pressure was maintained at 200 Pa.
  • a high frequency of 13.56 MHz was applied to the electrode to deposit a seed layer.
  • PH 3 and CO 2 were flowed to continuously form an n layer.
  • the high frequency and each gas were stopped and evacuated. It was conveyed to the reaction tube for p layer formation, and the 2nd cell was deposited.
  • SiH 4 , CO 2 , H 2 and B 2 H 6 gases for forming the p layer were used. The other steps are the same as in forming the first cell.
  • the glass substrate was taken out after evacuation and introducing nitrogen gas.
  • a silver back electrode was deposited by 500 nm.
  • FIG. 1 shows the voltage-current characteristics of a prototype 2-junction cell under light irradiation.
  • A cell of the present invention
  • B cell of the prior art
  • An increase in current was observed and the efficiency improved from 10.7% to 11.9%.
  • Table 2 compares specific current-voltage characteristics.
  • FIG. 2 shows the cell collection efficiency (A: cell of the present invention, B: cell of the prior art).
  • the present invention in a silicon solar cell, it is possible to reduce the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increase the photocurrent to improve efficiency.

Abstract

This silicon solar cell reduces absorption loss in an n-type silicon layer and ZnO, or similar, which is a transparent electrode, and has increased photoelectric current and improved efficiency. A silicon solar cell is formed by forming, on a substrate, a cell layer having at least one unit cell formed from a p-type silicon layer, an i-type silicon layer and an n-type silicon layer, and forming an electrode layer on one surface of the substrate-side of the cell layer and forming a facing electrode on one surface of the cell layer which faces the substrate. The silicon solar cell is characterised in that: a sheet layer containing i-type microcrystalline Si:H is provided between the i-type silicon layer and the n-type silicon layer, said sheet layer having a film thickness of 1-500nm and a crystallinity of at least 40%; the n-type silicon layer contains n-type SixM1-x:H (M is O, N or C, 0<x<1), has a film thickness of 40-500nm, and a crystallinity of at least 10%.

Description

シリコン太陽電池およびその製造方法Silicon solar cell and manufacturing method thereof
　本発明は、シリコン太陽電池およびその製造方法に関する。 The present invention relates to a silicon solar cell and a method for manufacturing the same.
　薄膜シリコン太陽電池は、高効率化のために多接合化されるのが一般的である。たとえば、従来、２接合型セルは、ガラス/透明表面電極/第１セルのp型薄膜シリコン層/第１セルのi型薄膜シリコン層/第１セルのn型薄膜シリコン層/中間層/第２セルのp型薄膜シリコン層/第２セルのi型薄膜シリコン層/第２セルのn型薄膜シリコン層/透明裏面電極/反射用金属裏面電極から構成される。中間層としては、通常、ｎ型微結晶SiOxが使用される。また、通常、n型薄膜シリコン層は電流の発生に寄与せず、吸収ロスが存在する。また、透明裏面電極であるZnO 膜にはボロンによる自由キャリア吸収が存在する。 Thin film silicon solar cells are generally multi-junctioned for high efficiency. For example, the conventional two-junction cell is made of glass / transparent surface electrode / p-type thin film silicon layer of the first cell / i-type thin film silicon layer of the first cell / n-type thin film silicon layer of the first cell / intermediate layer / second layer. It is composed of two p-type thin film silicon layers / second cell i-type thin film silicon layer / second cell n-type thin film silicon layer / transparent back electrode / reflection metal back electrode. As the intermediate layer, n-type microcrystalline SiO x is usually used. In general, the n-type thin film silicon layer does not contribute to the generation of current, and there is an absorption loss. In addition, free carrier absorption by boron exists in the ZnO film which is a transparent back electrode.
　本発明は、シリコン太陽電池において、n 型シリコン層および透明電極である ZnO等 の吸収ロスを低下させ、光電流を増加させて効率向上を図ることを目的とする。 An object of the present invention is to improve the efficiency by reducing the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increasing the photocurrent in the silicon solar cell.
　本発明は、上記の課題を解決するために、以下の発明を提供する。
（１）基板上に、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層が形成され、かつ該セル層の基板側の片面に電極層、該セル層の基板と反対側の片面に対向電極層が形成されてなるシリコン太陽電池であって、該ｉ型シリコン層と該ｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層が設けられ、シード層は、膜厚が１～５００ｎｍであり、かつ結晶化度が４０％以上であり；かつ該ｎ型シリコン層は、ｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を含み、膜厚が４０～５００ｎｍであり、かつ結晶化度が１０％以上である、ことを特徴とするシリコン太陽電池。
（２）ｎ型シリコン層は、波長５００ｎｍにおける屈折率が２．５以下であり、かつ吸収係数が１０－４/ｃｍである光学的バンドギャップが２．５ｅＶ以上である上記（１）に記載のシリコン太陽電池。
（３）ｎ型シリコン層が微結晶質Ｓｉ：Ｈ、a-ＳｉおよびＳｉｘＭ１-ｘ：Ｈを含む上記（１）または（２）に記載のシリコン太陽電池。
（４）基板上に、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層が形成され、かつ該セル層の基板側の片面に電極層、該セル層の基板と反対側の片面に対向電極層が形成されてなるシリコン太陽電池を製造するに際し、該ｉ型シリコン層と該ｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層を設け、かつ該ｎ型シリコン層として、Ｏ源，Ｎ源またはＣ源原料ガス/シリコン源原料流量比を適宜調節して、波長５００ｎｍにおける屈折率が２．５以下であり、かつ光学的バンドギャップが２．５ｅＶ以上であるｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を形成することを特徴とするシリコン太陽電池の製造方法。 In order to solve the above problems, the present invention provides the following inventions.
(1) A cell layer having one or more unit cells composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and an electrode layer is formed on one side of the cell layer on the substrate side, A silicon solar cell in which a counter electrode layer is formed on one surface of a cell layer opposite to a substrate, the seed containing i-type microcrystalline Si: H between the i-type silicon layer and the n-type silicon layer The seed layer has a thickness of 1 to 500 nm and a crystallinity of 40% or more; and the n-type silicon layer has n-type Si x M 1-x : H (M is A silicon solar cell characterized by being O, N or C, containing 0 <x <1), having a film thickness of 40 to 500 nm and a crystallinity of 10% or more.
(2) The n-type silicon layer has a refractive index at a wavelength of 500 nm of 2.5 or less, an optical coefficient of absorption of 10 −4 / cm and an optical band gap of 2.5 eV or more. Silicon solar cells.
(3) The silicon solar cell according to (1) or (2), wherein the n-type silicon layer contains microcrystalline Si: H, a-Si, and Si x M 1-x : H.
(4) A cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on the substrate, and an electrode layer is formed on one side of the cell layer on the substrate side, When manufacturing a silicon solar battery in which a counter electrode layer is formed on one side of the cell layer opposite to the substrate, i-type microcrystalline Si: H is included between the i-type silicon layer and the n-type silicon layer. A seed layer is provided, and as the n-type silicon layer, an O source, N source, or C source material gas / silicon source material flow rate ratio is adjusted as appropriate so that the refractive index at a wavelength of 500 nm is 2.5 or less and optical Of a silicon solar cell characterized by forming an n-type Si x M 1-x : H (M is O, N or C and 0 <x <1) having a typical band gap of 2.5 eV or more Method.
　本発明によれば、シリコン太陽電池において、n 型シリコン層および透明電極である ZnO等 の吸収ロスを低下させ、光電流を増加させて効率向上を図ることができる。 According to the present invention, in a silicon solar cell, it is possible to reduce the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increase the photocurrent to improve efficiency.
本発明および従来技術による２接合型セルの電圧電流特性を示す。The voltage-current characteristic of the 2 junction type cell by this invention and a prior art is shown. 本発明および従来技術による２接合型セルの収集効率を示す。2 shows the collection efficiency of a two-junction cell according to the present invention and the prior art.
　本発明のシリコン太陽電池は、基板上に、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層が形成され、かつセル層の基板側の片面に電極層、セル層の基板と反対側の片面に対向電極層が形成されてなる。ｉ型シリコン層とｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層が設けられ、かつｎ型シリコン層はｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を含むことを特徴とする。 In the silicon solar battery of the present invention, a cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and the cell layer has a substrate side on one side. A counter electrode layer is formed on one side of the electrode layer and cell layer opposite to the substrate. A seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer, and the n-type silicon layer is n-type Si x M 1-x : H (M is O, N Or it is C and contains 0 <x <1).
　基板は、例えば、ガラス基板、プラスチック基板等の少なくとも可視光波長領域において透過性を有する材料を適用することができる。ガラス基板としてはソーダ石灰ガラス基板、アミノシリケートガラス基板、硼ケイ酸塩ガラス基板、等が好適である。好ましくは、光閉じ込め効果を得るために常法により基板表面に凹凸形状を形成させ得る。 For the substrate, for example, a material having transparency in at least the visible light wavelength region, such as a glass substrate and a plastic substrate, can be applied. As the glass substrate, a soda-lime glass substrate, an aminosilicate glass substrate, a borosilicate glass substrate, and the like are suitable. Preferably, in order to obtain a light confinement effect, an uneven shape can be formed on the substrate surface by a conventional method.
　基板上に電極層として形成される透明導電膜は、酸化亜鉛、酸化スズまたは酸化インジウムを含む膜であるのが好適であり、酸化亜鉛（ＺｎＯ）は、透光性が高く、抵抗率が低いので特に好適である。透明導電膜は、例えば、ＭＯＣＶＤ法、スパッタリング法等により形成することができる。 The transparent conductive film formed as an electrode layer on the substrate is preferably a film containing zinc oxide, tin oxide or indium oxide, and zinc oxide (ZnO) has high translucency and low resistivity. Therefore, it is particularly suitable. The transparent conductive film can be formed by, for example, the MOCVD method, the sputtering method, or the like.
　透明導電膜の厚さは５００～３０００ｎｍであるのが好適である。 The thickness of the transparent conductive film is preferably 500 to 3000 nm.
　本発明の薄膜太陽電池は、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層を有するが、シリコンとしては結晶質、アモルファスが使用され得る。たとえば透明導電膜上に、ｐ型層、ｉ型層およびｎ型層のシリコン系薄膜を順に積層して単位セルを形成する。単位セルは、シラン（ＳｉＨ4）、ジシラン（Ｓｉ2Ｈ6）、ジクロルシラン（ＳｉＨ2Ｃｌ2）等のシリコン含有ガス（Ｓｉ源）、メタン（ＣＨ4）等の炭素含有ガス（炭素源）、炭酸ガス（ＣＯ２）等の酸素含有ガス（酸素源）、窒素（Ｎ２）、アンモニア（ＮＨ３）、亜酸化窒素（Ｎ2Ｏ）等の窒素含有ガス（窒素源）、ジボラン（Ｂ2Ｈ6）等のｐ型ドーパントガス、フォスフィン（ＰＨ3）等のｎ型ドーパントガス、ならびに水素（Ｈ2）等の希釈ガスを混合した混合ガスを用いてＭＯＣＶＤ法等の常法により形成することができる。 The thin film solar cell of the present invention has a cell layer having one or more unit cells composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer, and crystalline or amorphous may be used as silicon. For example, a unit cell is formed by sequentially stacking a p-type layer, an i-type layer and an n-type silicon thin film on a transparent conductive film. The unit cell includes silicon-containing gas (Si source) such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas (carbon source) such as methane (CH 4 ), Oxygen-containing gas (oxygen source) such as carbon dioxide (CO 2 ), nitrogen-containing gas (nitrogen source) such as nitrogen (N 2 ), ammonia (NH 3 ), nitrous oxide (N 2 O), diborane (B 2 It is formed by a conventional method such as MOCVD using a mixed gas in which a p-type dopant gas such as H 6 ), an n-type dopant gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) are mixed. Can do.
　本発明のシリコン太陽電池においては、このようなセル層において、まずｉ型シリコン層とｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層が設けられる。シード層は、光電流を向上させるためには、膜厚が１～５００ｎｍであり、かつ結晶化度が４０％以上であるのが好適である。
　　さらに、本発明のシリコン太陽電池においては、このようなセル層において、ｎ型シリコン層はｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を含む。本発明のｎ型シリコン層は、通常、微結晶質Ｓｉ：Ｈ、a-ＳｉおよびＳｉｘＭ１-ｘ：Ｈを含む。ｎ型シリコン層は、光電流を向上させるためには、膜厚が４０～５００ｎｍであり、かつ結晶化度が１０％以上であるのが好適である。
　そして、ｎ型シリコン層は反射層としての役割も果たし、波長５００ｎｍにおける屈折率が２．５以下であり、かつ吸収係数が１０－４/ｃｍである光学的バンドギャップが２．５ｅＶ以上であるのが光閉じ込め効果の点から好適である。 In the silicon solar battery of the present invention, in such a cell layer, first, a seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer. In order to improve the photocurrent, the seed layer preferably has a thickness of 1 to 500 nm and a crystallinity of 40% or more.
Furthermore, in the silicon solar cell of the present invention, in such a cell layer, the n-type silicon layer is n-type Si x M 1-x : H (M is O, N or C, and 0 <x <1). including. The n-type silicon layer of the present invention typically contains microcrystalline Si: H, a-Si and Si x M 1-x : H. In order to improve the photocurrent, the n-type silicon layer preferably has a film thickness of 40 to 500 nm and a crystallinity of 10% or more.
The n-type silicon layer also serves as a reflective layer, and has an optical band gap of 2.5 eV or more with a refractive index of 2.5 or less at a wavelength of 500 nm and an absorption coefficient of 10 −4 / cm. Is preferable from the viewpoint of the light confinement effect.
　このようなｎ型シリコン層は、Ｏ源，Ｎ源またはＣ源原料ガス/シリコン源原料流量比を適宜調節して、得られるｎ型ＳｉｘＭ１-ｘ：Ｈの、波長５００ｎｍにおける屈折率が２．５以下であり、かつ光学的バンドギャップが２．５ｅＶ以上であるようにするのが好適である。たとえば、Ｏ源原料ガス/シリコン源原料（たとえば、ＣＯ２/ＳｉＨ４）の場合には、流量比３以上とすることにより、達成し得る。 Such an n-type silicon layer has a refractive index at a wavelength of 500 nm of n-type Si x M 1-x : H obtained by appropriately adjusting the O source, N source or C source material gas / silicon source material flow rate ratio. Is not more than 2.5 and the optical band gap is preferably not less than 2.5 eV. For example, in the case of O source material gas / silicon source material (for example, CO 2 / SiH 4 ), this can be achieved by setting the flow rate ratio to 3 or more.
　本発明のシリコン太陽電池において、上記の単位セルを少なくとも１個有するセル層を形成した後、セル層の最後のｎ層上に対向電極層が形成される。対向電極層としては、各種の公知の金属酸化物、金属などの電極材料を用いることができるが、反射率の高い金属を用いることにより、単位セル内に光を閉じこめることができるので好適である。たとえば金属としては、銀、アルミニウム、ニッケル、クロム等を用いることができ、蒸着法、スパッタリング法等により形成され得る。 In the silicon solar battery of the present invention, after forming a cell layer having at least one unit cell, a counter electrode layer is formed on the last n layers of the cell layer. As the counter electrode layer, various known metal oxides and electrode materials such as metals can be used, but it is preferable to use a highly reflective metal because light can be confined in the unit cell. . For example, silver, aluminum, nickel, chromium, or the like can be used as the metal, and the metal can be formed by vapor deposition, sputtering, or the like.
　　本発明のシリコン太陽電池においては、吸収ロスが少ないｉ型シード層（中性型微結晶及び結晶促進層）を従来の「中間層」の前に形成し、かつセルのｎ層を特定の組成とすることにより、吸収ロスを低減でき、多接合型セルの短絡電流及び全体の効率を向上させて高効率化し得たものである。換言すると、反射層としての役割を果たしていた従来の「中間層」をセルのｎ層と兼用した、あるいは従来の「中間層」を単位セル間から省略させた、ともいえるものである。 In the silicon solar cell of the present invention, an i-type seed layer (neutral type microcrystal and crystal promotion layer) with low absorption loss is formed before the conventional “intermediate layer”, and the n-layer of the cell has a specific composition Thus, the absorption loss can be reduced, and the short-circuit current and the overall efficiency of the multi-junction cell can be improved to increase the efficiency. In other words, it can be said that the conventional “intermediate layer” serving as the reflective layer is also used as the n layer of the cell, or the conventional “intermediate layer” is omitted from between the unit cells.
実施例１
　まず、厚さが0.7mm のコーニング社＃7059ガラス基板をアセトン及びエタノール溶液でそれぞれ１０分間洗浄した。ついで、基板を乾燥させ、透明電導膜である ZnO膜をMOCVD (Metal Organic Chemical Vapor Deposition) 法で形成した。155℃に加熱された基板ホルダー上にガラス基板を置き、MOCVD 装置の反応管を閉め、反応管内を真空にした。ついで、アルゴンガスを流して反応管内の圧力を3 Torrにして10 分間保持した。その後、アルゴンガスをH2O 及びジエチル亜鉛 (DEZ)の入ったバブラーに流し、H2O、DEZ 及びジボランガス（B2H６）を反応管内に流した。使用したH2O、DEZ及びB2H６ 流量は、それぞれ281mmol/min, 100 mmol/min 及び0.26 mmol/minである。なお、H2O及びDEZの入ったバブラーの保持温度は、それぞれ20℃及び40℃ である。35分間成膜したら両方のアルゴンガス及びB2H６ガスを止め、反応管を真空にした。その後、窒素ガスを投入して、反応管を開き、ZnO膜が成膜されたガラス基板を取り出す。成膜された ZnO膜の膜厚及びそのRMS（原子間力顕微鏡(AFM)で求めた表面粗さ）は、それぞれ約 1500 nm 及び 70 nmであった。 Example 1
First, a 0.7 mm thick Corning # 7059 glass substrate was washed with acetone and ethanol solutions for 10 minutes, respectively. Next, the substrate was dried, and a ZnO film as a transparent conductive film was formed by MOCVD (Metal Organic Chemical Vapor Deposition) method. A glass substrate was placed on a substrate holder heated to 155 ° C., the reaction tube of the MOCVD apparatus was closed, and the reaction tube was evacuated. Subsequently, argon gas was allowed to flow so that the pressure in the reaction tube was set at 3 Torr and held for 10 minutes. Thereafter, argon gas was passed through a bubbler containing H 2 O and diethyl zinc (DEZ), and H 2 O, DEZ and diborane gas (B 2 H 6 ) were allowed to flow into the reaction tube. The H 2 O, DEZ and B 2 H 6 flow rates used are 281 mmol / min, 100 mmol / min and 0.26 mmol / min, respectively. The holding temperatures of the bubblers containing H 2 O and DEZ are 20 ° C. and 40 ° C., respectively. When the film was formed for 35 minutes, both argon gas and B 2 H 6 gas were stopped, and the reaction tube was evacuated. Thereafter, nitrogen gas is introduced, the reaction tube is opened, and the glass substrate on which the ZnO film is formed is taken out. The thickness of the deposited ZnO film and its RMS (surface roughness determined by atomic force microscope (AFM)) were about 1500 nm and 70 nm, respectively.
　ついで、第１セルを堆積させた。上記の ZnO 基板を CVD 装置のサンプル取り入れ用反応管に投入、真空引きしてから、基板をｐ層形成用反応管へ搬送し、200℃にセットされた基板ホルダー電極に設置した。各層の形成条件を表１に示す（「パワー」は高周波出力である）。 Next, the first cell was deposited. The above ZnO substrate was put into a reaction tube for sample intake of a CVD device and evacuated, and then the substrate was transferred to a reaction tube for forming a p layer and placed on a substrate holder electrode set at 200 ° C. The conditions for forming each layer are shown in Table 1 (“power” is a high-frequency output).
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　ｐ層形成用のＳｉＨ４、モノメチルシラン（MMS)、Ｈ2及びB2H６ ガスを流し、ガス圧力を70Pa に保持した。ついで、 13.56MHz の高周波を電極に投入し、ｐ層を堆積させた。その後、高周波及び各ガスを止めて真空引きにし、i層形成用反応管へ搬送し、i層を堆積させた。i層形成用のSiH４及びH2ガスを流し、ガス圧力を50Paに保持した。ついで、60MHz の高周波を電極に投入し、i層を堆積させた。その後、高周波及び各ガスを止めて真空引きにし、n層形成用反応管へ搬送し、シード層及びn層を堆積させた。シード層形成用のＳｉH４及びH2ガスを流し、ガス圧力を200Paに保持した。ついで、13.56MHz の高周波を電極に投入し、シード層を堆積させ、シード層形成後、 PH３及び CO2を流して連続的にｎ層を形成させた。その後、高周波及び各ガスを止めて真空引きした。p 層形成用反応管へ搬送し、第２セルを堆積させた。第１セルの場合と違って、ｐ層形成用のＳｉH４、CO2、H2及び　B2H６ガスを使用した。その他の工程は、第１セル形成の際と同様である。第２セルを形成した後、真空引きにし、窒素ガスを投入した後、ガラス基板を取り出した。最終的に銀裏面電極を500 nm 蒸着させた。 SiH 4 , monomethylsilane (MMS), H 2, and B 2 H 6 gases for forming the p layer were flowed, and the gas pressure was maintained at 70 Pa. Next, a high frequency of 13.56 MHz was applied to the electrode to deposit a p-layer. Thereafter, the high frequency and each gas were stopped and evacuated, and transferred to the i-layer forming reaction tube to deposit the i-layer. SiH 4 and H 2 gases for forming the i layer were flowed, and the gas pressure was maintained at 50 Pa. Next, a high frequency of 60 MHz was applied to the electrode to deposit the i layer. Thereafter, the high frequency and each gas were stopped and evacuated, and transferred to an n-layer forming reaction tube to deposit a seed layer and an n-layer. SiH 4 and H 2 gases for seed layer formation were flowed, and the gas pressure was maintained at 200 Pa. Next, a high frequency of 13.56 MHz was applied to the electrode to deposit a seed layer. After forming the seed layer, PH 3 and CO 2 were flowed to continuously form an n layer. Then, the high frequency and each gas were stopped and evacuated. It was conveyed to the reaction tube for p layer formation, and the 2nd cell was deposited. Unlike the case of the first cell, SiH 4 , CO 2 , H 2 and B 2 H 6 gases for forming the p layer were used. The other steps are the same as in forming the first cell. After forming the second cell, the glass substrate was taken out after evacuation and introducing nitrogen gas. Finally, a silver back electrode was deposited by 500 nm.
　図１は、光照射下における試作した２接合型セルの電圧電流特性を示す。従来技術による構造を用いたセルの特性も示す（Ａ：本発明のセル、Ｂ：従来技術のセル）。電流増加が観測され、効率が10.7% から１1.9% に向上した。表２は、具体的な電流電圧特性を比較するものである。 図２は、それぞれセルの収集効率を示す（Ａ：本発明のセル、Ｂ：従来技術のセル）。 FIG. 1 shows the voltage-current characteristics of a prototype 2-junction cell under light irradiation. The characteristics of the cell using the structure according to the prior art are also shown (A: cell of the present invention, B: cell of the prior art). An increase in current was observed and the efficiency improved from 10.7% to 11.9%. Table 2 compares specific current-voltage characteristics. FIG. 2 shows the cell collection efficiency (A: cell of the present invention, B: cell of the prior art).
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　本発明によれば、シリコン太陽電池において、n 型シリコン層および透明電極である ZnO等 の吸収ロスを低下させ、光電流を増加させて効率向上を図ることができる。 According to the present invention, in a silicon solar cell, it is possible to reduce the absorption loss of the n-type silicon layer and the transparent electrode, such as ZnO, and increase the photocurrent to improve efficiency.

Claims (4)

  1. 　基板上に、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層が形成され、かつ該セル層の基板側の片面に電極層、該セル層の基板と反対側の片面に対向電極層が形成されてなるシリコン太陽電池であって、該ｉ型シリコン層と該ｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層が設けられ、シード層は、膜厚が１～５００ｎｍであり、かつ結晶化度が４０％以上であり；かつ該ｎ型シリコン層は、ｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を含み、膜厚が４０～５００ｎｍであり、かつ結晶化度が１０％以上である、ことを特徴とするシリコン太陽電池。 A cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and an electrode layer on one side of the cell layer on the substrate side, A silicon solar cell in which a counter electrode layer is formed on one side opposite to a substrate, wherein a seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer. The seed layer has a thickness of 1 to 500 nm and a crystallinity of 40% or more; and the n-type silicon layer is n-type Si x M 1-x : H (M is O, N Or a silicon solar cell, characterized in that it is C, contains 0 <x <1), has a film thickness of 40 to 500 nm, and has a crystallinity of 10% or more.
  2. 　ｎ型シリコン層は、波長５００ｎｍにおける屈折率が２．５以下であり、かつ吸収係数が１０－４/ｃｍである光学的バンドギャップが２．５ｅＶ以上である請求項１に記載のシリコン太陽電池。 2. The silicon solar cell according to claim 1, wherein the n-type silicon layer has a refractive index of 2.5 or less at a wavelength of 500 nm and an optical band gap of 2.5 eV or more having an absorption coefficient of 10 −4 / cm. .
  3. 　ｎ型シリコン層が微結晶質Ｓｉ：Ｈ、a-ＳｉおよびＳｉｘＭ１-ｘ：Ｈを含む請求項１または２に記載のシリコン太陽電池。 The silicon solar cell according to claim 1, wherein the n-type silicon layer contains microcrystalline Si: H, a-Si, and Si x M 1-x : H.
  4. 　基板上に、ｐ型シリコン層、ｉ型シリコン層およびｎ型シリコン層からなる単位セルを１個以上有するセル層が形成され、かつ該セル層の基板側の片面に電極層、該セル層の基板と反対側の片面に対向電極層が形成されてなるシリコン太陽電池を製造するに際し、該ｉ型シリコン層と該ｎ型シリコン層の間にｉ型微結晶質Ｓｉ：Ｈを含むシード層を設け、かつ該ｎ型シリコン層として、Ｏ源，Ｎ源またはＣ源原料ガス/シリコン源原料流量比を適宜調節して、波長５００ｎｍにおける屈折率が２．５以下であり、かつ光学的バンドギャップが２．５ｅＶ以上であるｎ型ＳｉｘＭ１-ｘ：Ｈ（ＭはＯ，ＮまたはＣであり、０<ｘ<１）を形成することを特徴とするシリコン太陽電池の製造方法。 A cell layer having at least one unit cell composed of a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer is formed on a substrate, and an electrode layer on one side of the cell layer on the substrate side, In manufacturing a silicon solar cell in which a counter electrode layer is formed on one side opposite to the substrate, a seed layer containing i-type microcrystalline Si: H is provided between the i-type silicon layer and the n-type silicon layer. And an n-type silicon layer having a refractive index at a wavelength of 500 nm of 2.5 or less and an optical band gap by appropriately adjusting an O source, N source or C source material gas / silicon source material flow rate ratio. N-type Si x M 1-x : H (M is O, N, or C, and 0 <x <1) is formed.
PCT/JP2012/060044 2011-04-22 2012-04-12 Silicon solar cell and manufacturing method for same WO2012144420A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358350A (en) * 2000-06-12 2001-12-26 Canon Inc Photovoltaic element
WO2008078471A1 (en) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha Photoelectric converter and method for fabricating the same
JP2010034411A (en) * 2008-07-30 2010-02-12 Mitsubishi Electric Corp Thin film solar cell and manufacturing method thereof
JP2010109279A (en) * 2008-10-31 2010-05-13 Mitsubishi Heavy Ind Ltd Photoelectric conversion device and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358350A (en) * 2000-06-12 2001-12-26 Canon Inc Photovoltaic element
WO2008078471A1 (en) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha Photoelectric converter and method for fabricating the same
JP2010034411A (en) * 2008-07-30 2010-02-12 Mitsubishi Electric Corp Thin film solar cell and manufacturing method thereof
JP2010109279A (en) * 2008-10-31 2010-05-13 Mitsubishi Heavy Ind Ltd Photoelectric conversion device and method of manufacturing the same

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