WO2012142038A1 - Source de faisceaux électroniques découplée améliorée pour le traitement de semi-conducteurs - Google Patents

Source de faisceaux électroniques découplée améliorée pour le traitement de semi-conducteurs Download PDF

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Publication number
WO2012142038A1
WO2012142038A1 PCT/US2012/032920 US2012032920W WO2012142038A1 WO 2012142038 A1 WO2012142038 A1 WO 2012142038A1 US 2012032920 W US2012032920 W US 2012032920W WO 2012142038 A1 WO2012142038 A1 WO 2012142038A1
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WIPO (PCT)
Prior art keywords
processing
substrate
plasma
recited
semiconductor substrate
Prior art date
Application number
PCT/US2012/032920
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English (en)
Inventor
John Patrick Holland
Peter L.G. Ventzek
Harmeet Singh
Jun Shinagawa
Akira Koshiishi
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/084,325 external-priority patent/US20120258555A1/en
Priority claimed from US13/104,923 external-priority patent/US8900402B2/en
Priority claimed from US13/357,003 external-priority patent/US9177756B2/en
Priority claimed from US13/356,962 external-priority patent/US9111728B2/en
Priority claimed from US13/357,044 external-priority patent/US20120258607A1/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to CN201280018081.7A priority Critical patent/CN103620729B/zh
Priority to JP2014505217A priority patent/JP6001641B2/ja
Priority to SG2013071790A priority patent/SG193943A1/en
Priority to KR1020137029903A priority patent/KR101900527B1/ko
Publication of WO2012142038A1 publication Critical patent/WO2012142038A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06366—Gas discharge electron sources

Definitions

  • Plasma sources utilized for thin film processing in semiconductor device fabrication are often unable to achieve the most desirable condition for dry etching due to the inability to separately control ion and radical concentrations in the plasma.
  • the desirable conditions for plasma etching would be achieved by increasing the ion concentration in the plasma while simultaneously maintaining the radical concentration at a constant level.
  • this type of independent ion concentration versus radical concentration control cannot be achieved using the common plasma source typically used for thin film processing. It is within this context that the present invention arises.
  • a semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber.
  • the system also includes a plasma chamber defined separate from the processing chamber.
  • the plasma chamber is defined to generate a plasma.
  • the system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber.
  • the plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber.
  • the system further includes an electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber above and across the substrate support.
  • a method for processing a semiconductor substrate.
  • the method includes an operation for placing a substrate on a substrate support in exposure to a processing region.
  • the method also includes an operation for generating a plasma in a plasma generation region separate from the processing region.
  • the method also includes an operation for supplying reactive constituents of the plasma from the plasma generation region to the processing region.
  • the method further includes an operation for injecting electrons into the processing region over the substrate, whereby the injected electrons modify an ion density in the processing region to affect processing of the substrate.
  • a semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber.
  • the system also includes a plasma chamber defined separate from the processing chamber.
  • the plasma chamber is defined to generate a plasma.
  • the system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber.
  • the plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber.
  • the system further includes an electrode disposed within the processing chamber separate from the substrate support.
  • a power supply is electrically connected to the electrode.
  • the power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
  • a method for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • the method includes an operation for placing a substrate on a substrate support in exposure to a processing region.
  • the method also includes an operation for generating a plasma in a plasma generation region separate from the processing region.
  • the method also includes an operation for supplying reactive constituents of the plasma from the plasma generation region to the processing region.
  • the method further includes an operation for supplying power to one or more electrodes disposed within the processing region separate from the substrate support. The power supplied to the one or more electrodes injects electrons from the one or more electrodes into the processing region so as to modify an ion density in the processing region to affect processing of the substrate.
  • a semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber.
  • the system also includes a plasma chamber defined separate from the processing chamber.
  • the plasma chamber is defined to generate a plasma.
  • the system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber.
  • the plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber.
  • the system further includes a plurality of power delivery components defined to deliver power to the plurality of fluid transmission pathways, so as to generate supplemental plasma within the plurality of fluid transmission pathways.
  • the plurality of fluid transmission pathways are defined to supply reactive constituents of the supplemental plasma to the processing chamber.
  • a method for processing a semiconductor substrate.
  • the method includes an operation for placing a substrate on a substrate support in exposure to a processing region.
  • the method also includes an operation for generating a plasma in a plasma generation region separate from the processing region.
  • the method also includes an operation for supplying reactive constituents of the plasma from the plasma generation region through a plurality of fluid transmission pathways into the processing region, whereby the reactive constituents of the plasma affect processing of the substrate.
  • the method further includes an operation for generating a supplemental plasma in the plurality of fluid transmission pathways.
  • the method also includes an operation for supplying reactive constituents of the supplemental plasma from the plurality of fluid transmission pathways into the processing region, whereby the reactive constituents of the supplemental plasma affect processing of the substrate.
  • Figure 1 shows a simplified schematic of a semiconductor substrate processing system that utilizes a plasma chamber defined separate from a substrate processing chamber, in accordance with one embodiment of the present invention.
  • Figure 2 shows a plot of ion density in the ion source region needed to obtain a 1.0E11 cc "1 ion density in the substrate processing chamber as a function of tube hole diameter, where the tubes represent the conveyance means between the ion source region and the substrate processing chamber, in accordance with one embodiment of the present invention.
  • Figure 3 A shows a vertical cross-section of a plasma-driven substrate processing system, in accordance with one embodiment of the present invention.
  • Figure 3B shows a horizontal cross-section view A- A as referenced in Figure 3 A, in accordance with one embodiment of the present invention.
  • Figure 3C shows a variation of the horizontal cross-section view of Figure 3B in which the spacing between the fluid transmission pathways across the top plate is decreased, in accordance with one embodiment of the present invention.
  • Figure 3D shows a variation of the horizontal cross-section view of Figure 3B in which the spacing between the fluid transmission pathways across the top plate is increased, in accordance with one embodiment of the present invention.
  • Figure 3E shows a variation of the horizontal cross-section view of Figure 3B in which the spacing between the fluid transmission pathways across the top plate is non-uniform, in accordance with one embodiment of the present invention.
  • Figure 3F shows a top view of the substrate support in a system configuration in which an electron beam source is defined to transmit multiple spatially separated electron beams through the substrate processing region, above and across the substrate support, in a common direction, in accordance with one embodiment of the present invention.
  • Figure 3G shows a top view of the substrate support in the system configuration in which multiple electron beam sources are defined to transmit multiple spatially separated electron beams through the substrate processing region, above and across the substrate support, in respective multiple directions, in accordance with one embodiment of the present invention.
  • Figure 3H shows a rasterized temporal sequence for operation of the multiple electron beam sources of Figure 3G, in accordance with one embodiment of the present invention.
  • Figure 4 A shows an example electron beam source defined as a hollow cathode device, in accordance with one embodiment of the present invention.
  • Figure 4B shows a front view of the conductive grid, in accordance with one embodiment of the present invention.
  • Figure 5A shows a variation of the plasma-driven substrate processing system that implements a DC-biased surface electron beam source, in accordance with one embodiment of the present invention.
  • Figure 5B shows a close-up view of the electrode, in accordance with one embodiment of the present invention.
  • Figure 6A shows a variation of the plasma-driven substrate processing system that implements a planar DC-biased surface electron beam source, in accordance with one embodiment of the present invention.
  • Figure 6B shows a close-up view of the planar electrode, in accordance with one embodiment of the present invention.
  • Figure 7 shows a variation of the plasma-driven substrate processing system that utilizes the fluid transmission pathways as supplementary ion generation regions, in accordance with one embodiment of the present invention.
  • Figure 8 shows a flowchart of a method for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • Figure 9 shows a flowchart of a method for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • Figure 10 shows a flowchart of a method for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • Plasma sources utilized for thin film semiconductor processing are often unable to achieve the most desirable condition for dry etching due to the inability to separately adjust ion and radical concentrations in the plasma.
  • the desirable conditions for plasma etching would be achieved by increasing the ion concentrations, while at the same time maintaining the radical concentration at a substantially constant level.
  • the concept of providing separate control of ion concentration and radical concentration in a semiconductor processing plasma is referred to herein as providing a decoupled ion/radical plasma source.
  • One concept for providing the decoupled ion/radical plasma source is to inject radicals and ions from separate plasma sources.
  • these separate plasma sources can be either spatially separated or temporally separated, i.e., defined to generate primarily ion or primarily radicals at different times. Examples of decoupled ion/radical plasma sources that utilize spatial separation, temporal separation, or a combination thereof are described in co-pending U.S. Patent Application No. 13/104,923, filed on May 10, 2011, entitled "Semiconductor Processing System Having Multiple Decoupled Plasma Sources.”
  • a plasma-driven substrate processing system that relies upon radical species of a plasma to provide some processing of the semiconductor substrate may generate the plasma in a plasma chamber separate from the substrate processing chamber due to differences between the environmental requirements, i.e., pressure, temperature, gas composition, gas flow rate, power supply, of the plasma chamber and the substrate processing chamber.
  • Figure 1 shows a simplified schematic of a semiconductor substrate processing system 100 that utilizes a plasma chamber 101 defined separate from a substrate processing chamber 103, in accordance with one embodiment of the present invention.
  • the plasma generation chamber 101 is fluidly connected to the substrate processing chamber 103 by a number of fluid transmission pathways 105.
  • the reactive species of the plasma generated within the plasma generation chamber 101 travel through the fluid transmission pathways 105 into the substrate processing chamber 103, as indicated by arrows 107.
  • some of the fluid transmission pathways 105 are defined to include an energizable region defined to provide supplemental electron generation to increase ion extraction from the plasma generation chamber 355.
  • the reactive species of the plasma interact with a substrate 109 so as to process the substrate 109 in a prescribed manner.
  • the term "substrate” as used herein refers to a semiconductor wafer.
  • the term “substrate” as used herein can refer to substrates formed of sapphire, GaN, GaAs or SiC, or other substrate materials, and can include glass panels/substrates, metal foils, metal sheets, polymer materials, or the like.
  • the "substrate” as referred to herein may vary in form, shape, and/or size.
  • the "substrate” as referred to herein may correspond to a 200 mm (millimeters) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer.
  • the "substrate” as referred to herein may correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, or the like, among other shapes.
  • the "substrate” referred to herein is denoted in the various example embodiment figures as substrate 109.
  • radical species are electrically neutral, the radical species can travel from the plasma generation chamber 101 through the fluid transmission pathways 105 to the substrate processing chamber 103 in conjunction with a flow of process gas.
  • ion species are electrically charged and can be electrically neutralized upon contact with a material surface, it can be difficult to achieve a controlled and efficient transfer of ions from the plasma generation chamber 101 through the fluid transmission pathways 105 to the substrate processing chamber 103.
  • the conveyance means can be defined in many different ways.
  • the ion source is generated in a chamber physically separate from the substrate processing chamber and the conveyance means is defined by an array of tubes.
  • a chamber for generating the ion source is separated from the substrate processing chamber by a plate assembly, and the conveyance means is defined by a number of through-holes formed through the plate assembly.
  • conveyance means are provided by way example only.
  • the conveyance means can be defined in other ways, so long as the conveyance means provides one or more fluid transmission pathways between a region in which the ion/radical source, i.e., plasma, is generated and the substrate processing region.
  • an ion flux achievable in a secondary substrate processing chamber is a product of an ion density in an ion source region and the Bohm velocity, where the Bohm velocity represents the speed of ions at an edge of a surface sheath in the ion source region.
  • the surface sheath represents a region in front of a material surface that is in contact with the ion source plasma and that is in the presence of an electric field.
  • the total number of ions available to the substrate processing chamber per unit time is then the product of the ion flux in the ion source region, i.e., in the plasma generation chamber, multiplied by a total flow area of the conveyance means (fluid transmission pathways) between the ion source region and the substrate processing chamber.
  • n upper number density of ions in ion source region
  • v b0 hm_up P er Bohm velocity of ions in ion source region
  • Ai oss j ower total area of walls of substrate processing chamber
  • Vbohmjower Bohm velocity of ions in substrate processing chamber.
  • Vbohm p ⁇ ) ' cm/ sec Equation 2.
  • maximizing the ion density in the substrate processing chamber can be accomplished by one or more of the following: 1) increasing the number density of ions in the ion source region, i.e., increasing n upper , 2) increasing the electron temperature in the ion source, i.e., increasing Vb 0 hm_u er, and 3) minimizing ion losses in the conveyance means between the ion source and the substrate processing chamber.
  • a total flow area of the conveyance means between the ion source region and the substrate processing chamber can be quite small. For example, small tube diameters or a small numbers of holes of small diameter may be needed to maintain an adequate pressure differential between the higher pressure ion source region and the lower pressure substrate processing chamber. Therefore, because large gas densities, i.e., high gas pressures, may be needed in the ion source region to achieve a sufficient amount of electron production, it may not be feasible to simply increase the flow area of the conveyance means between the ion source region and the substrate processing chamber.
  • Figure 2 shows a plot of ion density in the ion source region needed to obtain a 1.0E1 1 cc "1 ion density in the substrate processing chamber as a function of tube hole diameter, where the tubes represent the conveyance means between the ion source region and the substrate processing chamber, in accordance with one embodiment of the present invention.
  • An additional issue for separately controlling ion flux and radical flux in the substrate processing chamber is generating an ion flux in the presence of low electron temperature, particularly when the substrate processing chamber is operated at low pressure.
  • ALE atomic layer etching
  • having an ability to control the electron energy distribution function (EEDF) in the substrate processing chamber is itself a means of providing separate (decoupled) control of ion density relative to radical density within the substrate processing chamber. More specifically, having an ability to control the EEDF to "select" families of electrons that avoid low energy dissociation processes, and favor higher energy ionization or dissociative ionization processes, can increase the ion flux relative to the radical flux within the substrate processing chamber, or can increase the ion flux relative to the flux of unbeneficial radicals within the substrate processing chamber.
  • plasma-driven substrate processing system embodiments are disclosed herein to provide for adequate and large ion flux in plasma sources that exploit multiplexed ion and radical sources for ion and radical control.
  • the plasma-driven substrate processing system embodiments disclosed herein also provide for achieving large ion flux with non-damaging ion and electron energies in applications that may require such large ion flux, such as ALE.
  • Electron beam injection into the substrate processing chamber acts to lower the "bulk" electron temperature and plasma potential through charge addition. Therefore, the EEDF within the substrate processing chamber can be modified through electron beam injection. More specifically, electron beam injection into the substrate processing region has the effect of dropping the rate of low energy electron impact processes, e.g., dissociative electron impact processes. At electron energies above about 100 eV (electronvolts), electron interaction processes that include charged particle production have much larger cross-sections than electron interaction processes without charged particle production. Therefore, the family of high-energy electrons or beam-injected electrons can sustain the plasma discharge through high-energy electron interaction processes.
  • the plasma-driven substrate processing system embodiments disclosed herein implement various types of electron injection technology to maximize the ion flux available to a substrate and to provide for decoupling of ion and radical flux control within the substrate processing chamber.
  • FIG. 3A shows a vertical cross-section of a plasma-driven substrate processing system 300, in accordance with one embodiment of the present invention.
  • the system 300 includes a chamber 301 formed by a top structure 301B, a bottom structure 301C, and sidewalls 301A extending between the top structure 301B and bottom structure 301C.
  • the chamber 301 encloses a substrate processing region 302 in which the substrate 109 is held in a secured manner on a substrate support 303 and is exposed to reactive constituents 325 of a plasma 359.
  • the substrate processing region 302 is separated from a plasma generation chamber 355 by a top plate 315.
  • the reactive constituents 325 of the plasma 359 travel through a number of fluid transmission pathways 316 within the top plate 315 to reach the substrate processing region 302, as indicated by arrows 361.
  • the chamber sidewalls 301A, top structure 301B, and bottom structure 301 C can be formed from different materials, such as stainless steel or aluminum, by way of example, so long as the chamber 301 materials are structurally capable of withstanding pressure differentials and temperatures to which they will be exposed during plasma processing, and are chemically compatible with the plasma processing environment.
  • the chamber sidewalls 301A, top structure 301B, and bottom structure 301C are formed of an electrically conductive material, and are electrically connected to an electrical ground 357.
  • the plasma generation chamber 355 is formed above the top plate 315.
  • the plasma generation chamber 355 is in fluid communication with both a process gas source 319 and each of the fluid transmission pathways 316 through the top plate 315.
  • the system 300 also includes a coil assembly 351 disposed to transform the process gas within the plasma generation chamber 355 into the plasma 359.
  • the chamber top plate 301 B includes a window 353 that is suitable for transmission of RF (radio frequency) power from the coil assembly 351 into the plasma generation chamber 355.
  • the window 353 is formed from quartz.
  • the window 353 is formed from a ceramic material, such as silicon carbide.
  • RF power is delivered to the coil assembly 351 from one or more RF power sources 391A-391n.
  • Each RF power source 391A-391n is connected through respective matching circuitry 393 to ensure efficient RF power transmission to the coil assembly 351.
  • each of the multiple RF power sources 391A-391n can be independently controlled with regard to RF power frequency and/or amplitude.
  • the one or more RF power source 391 A-391n are defined to supply RF power having a frequency of either 2 MHz, 27 MHz, 60 MHz, 400 kHz, or a combination thereof.
  • the plasma generation chamber 355 can be defined to generate the plasma 359 in different ways.
  • the plasma generation chamber 355 can be defined as a capacitively coupled chamber, in which the plasma 359 generation region of the chamber 355 is exposed to a pair of spaced apart electrodes that are electrically connected to one or more power supplies, such that power (either direct current (DC), RF, or a combination thereof) is transmitted between the pair of electrodes and through the chamber 355, so as to transform the process gas delivered from the process gas source 319 into the plasma 359.
  • the plasma generation chamber 355 can be defined as a microwave-driven chamber.
  • a flow throttling device 333 is provided to control a flow rate of the process gases from the substrate processing region 302. Also, in one embodiment, the flow throttling device 333 is defined as a ring structure that is movable toward and away from the peripheral vents 327, as indicated by arrows 335.
  • the plasma generation chamber 355 is defined to operate at internal pressure up to about one Torr (T).
  • the substrate processing region 302 is operated within a pressure range extending from about 1 milliTorr (mT) to about 100 mT.
  • the system 300 is operated to provide a substrate processing region 302 pressure of about 10 mT, with a process gas throughput flow rate of about 1000 sec/sec (standard cubic centimeters per second), and with a residence time of the reactive constituents 325 within the substrate processing region 302 of about 10 milliseconds (ms).
  • the above example operating conditions represent one of an essentially limitless number of operating conditions that can be achieved with the system 300. The above example operating conditions do not represent or imply any limitation on the possible operating conditions of the system 300.
  • the substrate support 303 is disposed to support the substrate 109 in exposure to the substrate processing region 302.
  • the substrate support 303 is defined to hold the substrate 109 thereon during performance of plasma processing operations on the substrate 109.
  • the substrate support 303 is held by a cantilevered arm 305 affixed to a wall 301 A of the chamber 301.
  • the substrate support 303 can be affixed to the bottom plate 301C of the chamber 301 or to another member disposed within the chamber 301.
  • the substrate support 303 can be formed from different materials, such as stainless steel, aluminum, or ceramic, by way of example, so long as the substrate support 303 material is structurally capable of withstanding pressure differentials and temperatures to which it will be exposed during plasma processing, and is chemically compatible with the plasma processing environment.
  • the substrate support 303 includes a bias electrode 307 for generating an electric field to attract ions toward the substrate support 303, and thereby toward the substrate 109 held on the substrate support 303. More specifically, the electrode 307 within the substrate support 303 is defined to apply a bias voltage across the substrate processing region 302 between the substrate support 303 and the top plate 315. The bias voltage generated by the electrode 307 serves to pull ions that are formed within the plasma generation chamber 355 through the fluid transmission pathways 316 into the substrate processing region 302 and toward the substrate 109.
  • the substrate support 303 includes a number of cooling channels 309 through which a cooling fluid can be flowed during plasma processing operations to maintain temperature control of the substrate 109.
  • the substrate support 303 can include a number of lifting pins 311 defined to lift and lower the substrate 109 relative to the substrate support 303.
  • a door assembly 313 is disposed within the chamber wall 301A to enable insertion and removal of the substrate 109 into/from the chamber 301.
  • the substrate support 303 is defined as an electrostatic chuck equipped to generate an electrostatic field for holding the substrate 109 securely on the substrate support 303 during plasma processing operations.
  • the top plate 315 is disposed within the chamber 301 above and spaced apart from the substrate support 303, so as to be positioned above and spaced apart from the substrate 109 when positioned on the substrate support 303.
  • the substrate processing region 302 exists between the top plate 315 and the substrate support 303, so as to exist over the substrate 109 when positioned on the substrate support 303.
  • the substrate support 303 is movable in a vertical direction, as indicated by arrows 383, such that a process gap distance as measured perpendicularly across the substrate processing region 302 between the top plate 315 and substrate support 303 is adjustable within a range extending from about 1 cm to about 10 cm. In one embodiment, the substrate support 303 is adjusted to provide a process gap distance of about 5 cm. Also, in one embodiment, a vertical position of the substrate support 303 relative to the top plate 315, vice- versa, is adjustable either during performance of a plasma processing operation or between plasma processing operations.
  • Adjustment of the process gap distance provides for adjustment of a dynamic range of the ion flux emanating from the fluid transmission pathways 316. Specifically, the ion flux that reaches the substrate 109 can be decreased by increasing the process gap distance, vice versa. In one embodiment, when the process gap distance is adjusted to achieve an adjustment in the ion flux at the substrate 109, the process gas flow rate through the plasma generation chamber 355 can be correspondingly adjusted, thereby providing a level of independence in the control of radical flux at the substrate 109. Additionally, it should be appreciated that the process gap distance in combination with the ion and radical fluxes emanating from the fluid transmission pathways 316 into the substrate processing region 302 are controlled to provide for a substantially uniform ion density and radical density at and across the substrate 109.
  • the configuration of fluid transmission pathways 316 through the top plate 315 can influence how the reactive constituents 325 of the plasma 359 are distributed within the substrate processing region 302.
  • the fluid transmission pathways 316 are formed through the top plate 315 in a substantially uniformly distributed manner relative to the underlying substrate support 303.
  • Figure 3B shows a horizontal cross-section view A-A as referenced in Figure 3A, in accordance with one embodiment of the present invention. As shown in Figure 3B, the fluid transmission pathways 316 are formed through the top plate 315 in a substantially uniformly distributed manner relative to the underlying substrate support 303.
  • Figure 3C shows a variation of the horizontal cross-section view of Figure 3B in which the spacing between the fluid transmission pathways 316 across the top plate 315 is decreased, in accordance with one embodiment of the present invention.
  • Figure 3D shows a variation of the horizontal cross- section view of Figure 3B in which the spacing between the fluid transmission pathways 316 across the top plate 315 is increased, in accordance with one embodiment of the present invention.
  • Figure 3E shows a variation of the horizontal cross-section view of Figure 3B in which the spacing between the fluid transmission pathways 316 across the top plate 315 is nonuniform, in accordance with one embodiment of the present invention.
  • a total number of the fluid transmission pathways 316 through the top plate 315 is within a range extending from about 50 to about 200. In one example embodiment, a total number of the fluid transmission pathways 316 through the top plate 315 is about 100. It should be understood, however, that the above-mentioned example embodiments for the number and configuration of the fluid transmission pathways 316 through the top plate 315 are provided by way of example to facilitate description of the present invention.
  • any number and configuration of fluid transmission pathways 316 can be defined and arranged through the top plate 315 as necessary to provide an appropriate mixture and distribution of reactive constituents 325, i.e., radicals and/or ions, within the substrate processing region 302, so as to achieve a desired plasma processing result on the substrate 109.
  • reactive constituents 325 i.e., radicals and/or ions
  • the plasma-driven substrate processing system 300 of Figure 3A further includes at least one electron beam source 363 defined to generate an electron beam 367 and transmit the electron beam 367 through the substrate processing region 302 above and across the substrate support 303.
  • Each electron beam source 363 is electrically connected to receive power from a power supply 389, such that power can be supplied to each electron beam source 363 in an independently controlled manner.
  • the power supply 389 can be defined to transmit DC power, RF power, or a combination thereof, to the electron beam sources 363.
  • each electron beam source 363 is defined to transmit the electron beam 367 along a trajectory substantially parallel to a surface of the substrate support 303 defined to support the substrate 109. Also, each electron beam source 363 can be defined to generate and transmit one or multiple electron beams 367.
  • the electron beam source 363 is operated to transmit the electron beam 367 through the substrate processing region 302 as an ion generating gas, such as argon, is flowed through the substrate processing region 302.
  • the ion generating gas is a component of a process gas mixture supplied from the process gas source 319, and flows into the substrate processing region 302 through the fluid transmission pathways 316 in the top plate 315.
  • the electron beam 367 injection into the substrate processing region 302 is optimized to create substantially more ions through electron impact ionization events as compared to radicals through electron impact dissociation of the process gas.
  • a method to establish this preference for ionization relative to dissociation may include one or more of optimization of a position of the electron beam 367 source, optimization of a number of electrons injected into the processing region 302, and/or optimization of an energy of the electron beam 367.
  • electron beam 367 injection into and through the substrate processing region 302 provides for spatial and temporal control of an increase in ion density without substantially affecting radical density, thereby providing for an effective decoupling of ion density control from radical density control within the substrate processing region 302.
  • the embodiment of Figure 3 A also includes a number of conductive grids 365 positioned outside a perimeter of the substrate support 303 and above the substrate support 303.
  • the conductive grids 365 are electrically connected to a power supply 387, so as to have a controlled voltage level applied to each of the conductive grids 365 in an independently controlled manner.
  • the power supply 387 can be defined to transmit DC power, RF power, or a combination thereof, to the conductive grids 365.
  • the conductive grids 365 are positioned at and over the electron beam outlet of each electron beam source 363.
  • the power to the conductive grid 365 can be controlled to enhance, or at least not inhibit, electron beam 367 transmission from the electron beam source 363 over which the conductive grid 365 is positioned.
  • a positive charge can be applied to a given conductive grid 365 that is positioned on a far side of the substrate support 303 away from an active electron beam source 363, such that the given positively charged conductive grid 365 functions as an electrical sink for the electron beam 367 transmitted by the active electron beam source 363.
  • the system 300 can include one or more electron beam sources 363.
  • Figure 3F shows a top view of the substrate support 303 in a system 300 configuration in which an electron beam source 363 is defined to transmit multiple spatially separated electron beams 367 through the substrate processing region 302, above and across the substrate support 303, in a common direction, in accordance with one embodiment of the present invention.
  • the electron beam source 363 can be defined and operated to transmit the electron beams 367 in either a continuous or pulsed manner.
  • the electron beam source 363 can be defined and operated to transmit the electron beams 367 in a spatially segmented manner, such that the electron beams 367 are transmitted in the single common direction over a portion of the substrate support 303 at a given time.
  • the electron beam source 363 can be defined and operated to transmit the spatially segmented electron beams 367 in a temporally multiplexed manner, such that the electron beams 367 are collectively transmitted across an entirety of the substrate support 303 (and substrate 109 disposed thereon) in a time- averaged substantially uniform manner. In this manner, the electron beams 367 collectively provide a substantially uniform ion generation effect across the substrate support 303 and substrate 109 disposed thereon.
  • a first conductive grid 365A is disposed over the electron beam outlet of the electron beam source 363.
  • This first conductive grid 365 A can be powered to facilitate/enhance transmission of the electron beam 367 from the electron beam source 363.
  • a second conductive grid 365B is disposed at a position opposite the substrate support 303 from the electron beam source 363.
  • the second conductive grid 365B is electrically connected to the power supply 387 so as to receive a positive electrical charge.
  • the second conductive grid 365B functions as an electrical sink for the electron beams 367 transmitted in the single common direction across the substrate processing region 302 from the electron beam source 363.
  • FIG. 3G shows a top view of the substrate support 303 in the system 300 configuration in which multiple electron beam sources 363 are defined to transmit multiple spatially separated electron beams 367 through the substrate processing region 302, above and across the substrate support 303, in respective multiple directions, in accordance with one embodiment of the present invention.
  • Each electron beam source 363 can be defined and operated to transmit its electron beams 367 in either a continuous or pulsed manner.
  • the electron beam sources 363 can be defined and operated to transmit the electron beams 367 in a spatially rastered manner, such that the electron beams 367 are transmitted from a select number of electron beam sources 363 at a given time. In this case, one or more of the electron beam sources 363 can be operated at a given time.
  • the electron beam sources 363 can be defined and operated to transmit the spatially rastered electron beams 367 in a temporally multiplexed manner, such that the electron beams 367 are collectively transmitted across an entirety of the substrate support 303 (and substrate 109 disposed thereon) in a time-averaged substantially uniform manner.
  • each of the electron beam sources 363 is defined and operated to transmit its electron beam 367 over a central location of the substrate support 303.
  • each of the conductive grids 365 is electrically connected to the power supply 387, such that each of the conductive grids 365 can be electrically charged (either positive or negative) in an independently controlled manner.
  • a conductive grid 365 that is disposed over the electron beam outlet of an active electron beam source 363 is electrically charged to either enhance transmission of the electron beam 367 or not inhibit transmission of the electron beam 367.
  • another conductive grid 365 positioned opposite the substrate support 303 from the active electron beam source 363 is supplied with a positive electrical charge, such that this conductive grid 365 functions as an electrical sink for the electron beam 367 transmitted across the substrate processing region 302 from the active electron beam source 363.
  • Figure 3H shows a rasterized temporal sequence for operation of the multiple electron beam sources 363 of Figure 3G, in accordance with one embodiment of the present invention.
  • the electron beam sources 363 are defined to sequentially transmit the multiple spatially separated electron beams 367. For example, at a time (Time 1), a first electron beam source 363 is operated to transmit its electron beams 367 across the substrate support 303. At a next time (Time 2) a second electron beam source 363 adjacent to the first electron beam source is operated to transmit its electron beams 367 across the substrate support 303. The remaining ones of the multiple electron beam sources 363 are operated in a sequential manner at successive times to transmit their electron beams 367 across the substrate support 303.
  • a final electron beam source 363 is operated at a final time (Time 16) to transmit its electron beams 367 across the substrate support 303. Then, the rasterized temporal sequence of electron beam source 363 operation can be repeated, as necessary. It should be understood that in other embodiments, the electron beam sources 363 can be activated in essentially any order, e.g., a non-sequential order, and for essentially any time period so as to achieve a desired effect on the ion density within the substrate processing region 302.
  • the number of electron beam sources 363 shown in Figures 3G and 3H are provided by way of example.
  • 36 separate electron beam sources 363 are deployed around the periphery of the substrate support 303, and are spaced apart from each other such that adjacent ones of the 36 electron beam sources 363 transmit their respective electron beams across the substrate support 303 at an angular difference ( ⁇ ) of about 10 degrees relative to the center of the substrate support 303.
  • ⁇ angular difference
  • a different number of electron beam sources 363 can be deployed around the periphery of the substrate support 303 in a substantially uniform spaced apart manner.
  • the electron beam sources 363 can be deployed and operated to transmit their respective spatially rastered electron beams 367 in a temporally multiplexed manner, such that the electron beams 367 are collectively transmitted across an entirety of the substrate support 303 (and substrate 109 disposed thereon) in a time-averaged substantially uniform manner. In this manner, the electron beams 367 collectively provide a substantially uniform ion generation effect across the substrate support 303 and substrate 109 disposed thereon.
  • the electron beam sources 363 can be defined as different types of electron beam sources.
  • the electron beam source 363 are defined as one or more of hollow cathode devices, electron cyclotron resonance devices, laser-driven devices, microwave-driven devices, inductively coupled plasma generation devices, and capacitively coupled plasma generation devices. It should be understood that the above-mentioned types of electron beam sources 363 are provided by way of example.
  • any type of electron beam sources 363 can be utilized in the system 300, so long as the electron beam sources 363 are defined to generate and transmit the required electron beams 367 through the substrate processing region 302, so as to achieve a desired effect on ion density within the substrate processing region 302 and corresponding plasma processing result on the substrate 109.
  • Figure 4 A shows an example electron beam source 363 defined as a hollow cathode device 401, in accordance with one embodiment of the present invention.
  • the hollow cathode device 401 is positioned outside a perimeter of the substrate support 303 and above the substrate support 303.
  • the hollow cathode device 401 has an outlet region 407 oriented toward the substrate processing region 302 over the substrate support 303.
  • the hollow cathode device 401 can be disposed within the system 300 so as to be electrically and RF isolated from surrounding chamber materials.
  • the hollow cathode device 401 includes a pair of electrodes 403 A, 403B disposed on opposite sides of an interior cavity of the hollow cathode device 401.
  • the electrodes 403A, 403B are electrically connected to receive power from the electron beam power source 389.
  • the electron beam power source 389 can be defined to include a DC power supply 389A, an RF power supply 389B, or a combination thereof.
  • the RF power supply 389B is connected to the electrodes 403 A and/or 403B through matching circuitry 389C to provide impedance matching to minimize reflection of the transmitted RF power from the electrodes 403 A and/or 403B.
  • the electrodes 403A, 403B are positioned such that one electrode 403 A is disposed opposite the hollow cathode device 401 interior from the electron beam 367 outlet of the hollow cathode device 401, and the other electrode 403B is disposed next to the outlet of the hollow cathode device 401.
  • the electrodes 403 A, 403B can be disposed in other locations and/or orientations within the interior cavity of the hollow cathode device 401.
  • the hollow cathode device 401 can be defined to implement power delivery components other than electrodes 403 A, 403B, so long as the power delivery components are capable of conveying power to a process gas inside the interior of the hollow cathode device 401, so as to transform the process gas into a plasma 405.
  • the walls of the hollow cathode device 401 are electrically conductive and serve the function of the power delivery components.
  • the power delivery components are implemented as coils disposed proximate to the hollow cathode device 401.
  • the hollow cathode device 401 is also connected to the electron beam gas supply 388, such that the process gas for the electron beam generation can be flowed in a controlled manner from the electron beam gas supply 388 into the interior of the hollow cathode device 401.
  • the process gas Upon entering the interior of the hollow cathode device 401, the process gas is transformed into the plasma 405 by the power emanating from the electrodes 403 A, 403B, or other type of power delivery component.
  • RF power having a frequency of either 2 MHz, 27 MHz, 60 MHz, 400 kHz, or combination thereof is transmitted to the electrodes 403A, 403B, or other type of power delivery component, to transform the process gas into the plasma 405.
  • the hollow cathode device 401 is defined to implement an energized electron beam 367 outlet region 407 to enhance electron extraction from the interior cavity of the hollow cathode device 401.
  • the energizable outlet region 407 itself is defined as another hollow cathode.
  • the outlet region 407 is circumscribed by an electrode that can be powered by either DC power, RF power, or a combination thereof. As the reactive constituents from the plasma 405 flow through the energizable outlet region 407, the power emanating from the electrode will liberate fast electrons within the outlet region 407, which will enhance the electron beam 367 transmitted from the hollow cathode device 401.
  • the conductive grid 365 is disposed over the electron beam 367 outlet region 407 of the hollow cathode device 401. More specifically, the conductive grid 365 is disposed between the outlet region 407 of the hollow cathode device 401 and the substrate processing region 302 over the substrate support 303 to facilitate extraction of electrons from the plasma 405 within the interior cavity of the hollow cathode device 401.
  • Figure 4B shows a front view of the conductive grid 365, in accordance with one embodiment of the present invention.
  • the conductive grid 365 is electrically connected to receive power from the conductive grid power supply 387.
  • the power source 387 can be defined to include a DC power supply 387A, an RF power supply 387B, or a combination thereof.
  • the RF power supply 387B is connected to the conductive grid 365 through matching circuitry 387C to provide impedance matching to minimize reflection of the transmitted RF power from the conductive grid 365.
  • the conductive grid 365 is connected to a heater 409 to provide for independent temperature control of the conductive grid 365, which can be used to maintain a cleanliness state of the conductive grid 365.
  • the conductive grid 365 operates as an extraction grid to extract electron flux from the plasma 405 within the interior cavity of the hollow cathode device 401.
  • the conductive grid 365 can be operated in a pulsed manner such that a polarity of the electrical charge on the conductive grid 365 is alternated between positive and negative between pulses.
  • the conductive grid 365 operates to extract electron flux from the plasma 405 when supplied with a positive charge pulse, and extract ions from the plasma 405 when supplied with a negative charge pulse.
  • the conductive grid 365 can be pulsed in an alternating manner between an ion extraction mode and an electron extraction mode. Also, this pulsing of the conductive grid provides period averaged null current and access to ion driven ionization processes within the substrate processing region 302. Additionally, another conductive grid 365 disposed opposite the substrate support 303 from the outlet region 407 of the hollow cathode device 401 can be operated to have a positive charge to provide an electrical sink for the electron beam 367 transmitted by the hollow cathode device 401.
  • FIG. 5 A shows a variation of the plasma-driven substrate processing system 300 that implements a DC-biased surface electron beam source 503, in accordance with one embodiment of the present invention.
  • the system 300A of Figure 5A includes the DC-biased electron beam source 503 in lieu of the electron beam sources 363 and conductive grids 365.
  • the DC-biased electron beam source 503 is referred to hereafter as an electrode 503.
  • the electrode 503 is disposed within an electrically insulating member 501, such that a surface of the electrode 503 is exposed to the substrate processing region 302. Also, the electrode 503 is disposed within the processing chamber 301 separate from the substrate support 303.
  • the electrode 503 is defined as a conductive band disposed outside a perimeter of the substrate support 303 and above the substrate support 303 within the substrate processing region 302 of the processing chamber 301. In one embodiment, the electrode 503 is defined as a band or strap that circumscribes the substrate processing region 302 around the substrate support 303.
  • the electrode 503 is electrically connected to a power supply 505.
  • the power supply 505 is defined to apply electrical power to the electrode 503 so as to attract ions within the substrate processing region 302 toward the electrode 503 and liberate electrons from the electrode 503 into the substrate processing region 302.
  • the electrical power supplied to the electrode 503 from the power supply 505 can be DC power, RF power, or a combination of DC and RF power.
  • a negative voltage is applied to the electrode 503 by the power supply 505.
  • the voltage applied to the electrode 503 by the power supply 505 can be either negative or positive.
  • the power supply 505 is defined to supply a positive voltage to the electrode 503, thereby attracting electrons and repelling positively charged ions. Also, in one embodiment, the power supply 505 is defined to apply power to the electrode 503 in a pulsed manner and/or in an alternating polarity manner.
  • FIG. 5B shows a close-up view of the electrode 503, in accordance with one embodiment of the present invention.
  • the electrode 503 provides a DC- biased surface from which an incident ion flux (Jj on ) generates an electron flux (J e- ), i.e., electron beam, that leaves the surface of the electrode 503 in a direction toward the substrate processing region 302.
  • the ions in the ion flux (Jj on ) that are incident upon the electrode 503 are non-inert and are passivating, such as Si ions.
  • the DC-biased surface of the electrode 503 can be utilized to compensate for the passivating species that are produced through radical interactions.
  • the electrode 503 can be powered with either DC power, RF power, or a combination thereof. Also, in one embodiment, a low frequency RF power is supplied to the electrode 503.
  • the electrode 503 is sized to create a hollow cathode effect within the substrate processing region 302. More specifically, if the DC-biased surface of the electrode 503 is defined as a large enough band or strap that circumscribes the substrate processing region 302, such that electrons emitted from the electrode 503 reach the opposing portion of the electrode 503 with sufficient energy, a hollow cathode configuration may be formed within the substrate processing region 302 itself, thereby further enhancing the ionization within the substrate processing region 302.
  • FIG. 6A shows a variation of the plasma-driven substrate processing system 300 that implements a planar DC-biased surface electron beam source 601, in accordance with one embodiment of the present invention.
  • the system 300B of Figure 6A includes the planar DC-biased electron beam source 601 in lieu of the electron beam sources 363 and conductive grids 365.
  • the DC-biased electron beam source 601 is referred to hereafter as a planar electrode 601.
  • the planar electrode 601 is defined as a planar conductive segment 601 disposed above the substrate support 303 within the substrate processing region 302.
  • the planar electrode 601 is implemented within the system 300B in combination with the electrode 503 as discussed above with regard to Figures 5A-5B.
  • the planar electrode 601 is defined on a bottom surface of the top plate 315 in an orientation facing the substrate support 303, so as to face the substrate processing region 302.
  • the planar electrode 601 is electrically insulated from the top plate 315 by an insulating member 603.
  • each of the planar electrode 601 and the insulating member 603 includes a number of through-holes formed in alignment with the number of fluid transmission pathways 316 present in the top plate 315, such that both planar electrode 601 and insulating member 603 avoid interfering with a flow of reactive constituents from the plasma generation chamber 355 into the substrate processing region 302.
  • the planar electrode 601 is electrically connected to a power supply 605.
  • the power supply 605 is defined to apply a negative voltage to the planar electrode 601 so as to attract ions within the substrate processing region 302 toward the planar electrode 601 and liberate electrons from the planar electrode 601 into the substrate processing region 302.
  • the power supply 605 is defined to apply power to the planar electrode 601 in a pulsed manner.
  • the power supply 605 is defined to supply a positive voltage to the planar electrode 601, thereby attracting electrons and repelling positively charged ions.
  • FIG. 6B shows a close-up view of the planar electrode 601, in accordance with one embodiment of the present invention.
  • the planar electrode 601 provides a DC-biased surface from which an incident ion flux (Jj on ) generates an electron flux (J e- ), i.e., electron beam, that leaves the surface of the planar electrode 601 in a direction toward the substrate processing region 302.
  • the ions in the ion flux (Jj on ) that are incident upon the planar electrode 601 are non-inert and are passivating, such as Si ions.
  • the DC-biased surface of the planar electrode 601 can be utilized to compensate for the passivating species that are produced through radical interactions.
  • the planar electrode 601 can be powered with either DC power, RF power, or a combination thereof. Also, in one embodiment, a low frequency RF power is supplied to the electrode 601.
  • a total flow area of the fluid transmission pathways 316 between the plasma generation chamber 355 and the substrate processing region 302 can be quite small.
  • the fluid transmission pathways 316 can include small tube diameters or a small numbers of holes of small diameter in order to maintain an adequate pressure differential between the higher pressure plasma generation chamber 355 and the lower pressure substrate processing region 302. Therefore, because large gas densities, i.e., high gas pressures, may be needed in the plasma generation chamber 355 to achieve a sufficient amount of electron production, it may not be feasible to simply increase the flow area of the fluid transmission pathways 316 to obtain a higher ion flux from the plasma generation chamber 355 into the substrate processing region 302.
  • one embodiment of the present invention utilizes the fluid transmission pathways 316 as supplementary ion generation regions, i.e., as plasma boosters.
  • Figure 7 shows a variation of the plasma-driven substrate processing system 300 that utilizes the fluid transmission pathways 316 as supplementary ion generation regions, in accordance with one embodiment of the present invention.
  • the top plate 315 in the system 300 of Figure 3 A is replaced by an energizable top plate 701.
  • the energizable top plate 701 includes the number of fluid transmission pathways 316 formed through the energizable top plate 701 so as to extend from the plasma generation chamber 355 to the substrate processing region 302.
  • the energizable top plate 701 includes a number of power delivery components 702 disposed proximate to each of the number of fluid transmission pathways 316.
  • the power delivery components 702 are defined to deliver power to the fluid transmission pathways 316 so as to generate supplemental plasma 704 within the fluid transmission pathways 316.
  • the fluid transmission pathways 316 are defined to supply reactive constituents of both the plasma 359 and the supplemental plasma 704 to the substrate processing region 302.
  • the system 300C also includes a power source 703 defined to supply DC power, RF power, or a combination thereof, to the power delivery components 702.
  • the power delivery components 702 in turn function to transmit power through the fluid transmission pathways 316 so as to transform process gas within the fluid transmission pathways 316 into the supplemental plasma 704.
  • the system 300C can also include a process gas source 709 in fluid communication with each of the fluid transmission pathways 316 to provide for supply of a secondary process gas to each of the fluid transmission pathways 316.
  • the power transmitted from the power delivery components 702 can be used to transform the secondary process gas into the supplemental plasma 704.
  • the system 300C may not utilize the secondary process gas source 709.
  • the power delivery components 702 are defined to transform process gas that flows through the fluid transmission pathways 316 from the plasma generation chamber 355 into the supplemental plasma 704.
  • the fluid transmission pathways 316 are operated as plasma amplifying region.
  • the fluid transmission pathways 316, power delivery components 702, and power source 703 can be defined in many ways to form different types of supplemental plasma 704 generation regions within the fluid transmission pathways 316.
  • the fluid transmission pathways 316, power delivery components 702, and power source 703 can be defined such that the fluid transmission pathways 316 operate as flow-through hollow cathodes, flow-through capacitively coupled regions, flow-through inductively coupled regions, flow-through magnetron driven regions, flow-through laser driven regions, or a combination thereof.
  • each fluid transmission pathway 316 can be operated as either a hollow cathode, a capacitively coupled source, an inductive source (with inductive coils wrapping the fluid transmission pathway), through a magnetron effect, or through another kind of ionizing means, such as through irradiation of points in the fluid transmission pathway with focused laser light.
  • the fluid transmission pathways 316 are operated as a hollow cathode medium or with direct electron beam injection into the fluid transmission pathways 316 in order to achieve a sufficient amount of high energy electrons to produce significant amounts of ionization.
  • the power delivery components 702 include electron beam sources defined to generate electron beams and transmit these electron beams through the fluid transmission pathways 316, so as to enhance ion generation within the supplemental plasma 704 formed within the fluid transmission pathways 316.
  • the system 300C can optionally include an electrode 71 1 disposed in the plasma generation chamber 355 to drive charged species from the plasma generation chamber 355 through the fluid transmission pathways 316 into the substrate processing region 302.
  • the electrode 711 can function to drive charged species from the supplemental plasma 704 within the fluid transmission pathways 316 into the substrate processing region 302.
  • the electrode 711 can be connected to a power source to be supplied with DC power, RF power, or a combination thereof.
  • the polarity of the charge on the electrode 71 1 can be controlled and varied in a prescribed manner. For example, in one embodiment, power can be supplied to the electrode 71 1 in a pulsed manner.
  • the system 300C can optionally include the electrode 503 and corresponding power source 505, as previously discussed with regard to Figures 5A and 5B. Also, in one embodiment, the system 300C can optionally include the electrode beam sources 363, conductive grids 365, power sources 387 and 389, and electron beam gas supply 388, as previously discussed with regard to Figures 3A through 4B. And, in one embodiment, the system 300C can optionally include the planar electrode 601 and insulating member 603, as previously discussed with regard to Figures 6 A and 6B. In this embodiment, the planar electrode 601 can be operated as an extraction grid disposed within the substrate processing region 302 to attract charged species from the fluid transmission pathways 316 into the substrate processing region 302.
  • each of the electrode 503 and planar electrode 601 can be supplied with DC power, RF power, or a combination thereof. Also, as with the electrode 711, each of the electrode 503 and planar electrode 601 can be operated in an independently controlled manner, e.g., in a continuously powered manner or pulsed manner.
  • the remote plasma 359 source within the plasma generation chamber 355 can be used as an electron beam source to affect ion- to-radical flux control in the substrate processing region 302. If the remote plasma 359 source within the plasma generation chamber 355 is operated with a substantially negative potential relative to the substrate processing region 302, then electrons can be accelerated from the negative potential of the plasma generation chamber 355 through the fluid transmission pathways 316 to the positive potential of the substrate processing region 302. As the energetic electrons travel through the fluid transmission pathways 316 and into the substrate processing region 302, the energetic electrons cause ionization in an energy regime in which simple dissociation processes are not favored. Also, if the energetic electrons scatter as they travel through the fluid transmission pathways 316, the energetic electrons can generate additional secondary electrons, especially given that the secondary electron generation coefficient can be very high and often higher than the ion generation coefficient associated with electron interaction processes.
  • remote plasma 359 sources can be used for electron beam extraction from the plasma generation chamber 355 into the substrate processing region 302.
  • some embodiments can operate the plasma generation region 355 as a capacitively coupled plasma 359 source generation region, an inductively coupled plasma 359 source generation region, or a microwave plasma 359 source generation region in combination with DC biasing.
  • an electron extraction grid can be used to extract electrons from the plasma generation chamber 355 into a secondary plasma source region, e.g., within the fluid transmission pathways 316, where the extracted electrons can produce more ions.
  • spatial and/or temporal multiplexing of electron beam injection into the substrate processing region 302 facilitates modulation of the ion flux to radical flux within the substrate processing region 302.
  • use of electron beam excited plasma source in combination with a primarily radical constituent plasma source can provide a dynamic range of ion flux-to-radical flux ratio control that is not achievable by any other means.
  • FIG. 8 shows a flowchart of a method 800 for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • the plasma- driven substrate processing system 300 of Figures 3A through 4B can be used to perform the method of Figure 8.
  • the method 800 includes an operation 801 for placing a substrate on a substrate support in exposure to a processing region.
  • the method 800 also includes an operation 803 for generating a plasma in a plasma generation region separate from the processing region.
  • the method 800 also includes an operation 805 for supplying reactive constituents of the plasma from the plasma generation region to the processing region.
  • the method 800 further includes an operation 807 for injecting electrons into the processing region over the substrate, whereby the injected electrons modify an ion density in the processing region to affect processing of the substrate.
  • injecting electrons into the processing region includes transmitting an electron beam along a trajectory substantially parallel to a top surface of the substrate.
  • the trajectory of the electron beam extends in a linear manner from a first location outside a periphery of the substrate support and above the substrate support to a second location outside the periphery of the substrate support and above the substrate support.
  • the method 800 can include generating an electric steering field within the processing region, such that the trajectory of the electron beam extends through the processing region in a non-linear manner as controlled by the electric steering field.
  • the method 800 includes an operation for applying a positive electrical charge to a conductive grid at the second location, i.e., at the electron beam terminating location, such that the conductive grid functions as an electrical sink for the electron beam transmitted along the trajectory.
  • the electrons can be injected into the processing region in a pulsed manner, or in a continuous manner.
  • the operation 807 for injecting electrons into the processing region includes transmitting multiple spatially separated electron beams through the processing chamber above and across a top surface of the substrate.
  • each of the multiple spatially separated electron beams is transmitted in a common direction, such that the multiple spatially separated electron beams are transmitted in a substantially parallel manner above and across the top surface of the substrate.
  • the multiple spatially separated electron beams are transmitted in different multiple directions above and across the top surface of the substrate and substantially parallel to the top surface of the substrate.
  • different ones of the multiple spatially separated electron beams are transmitted at different times such that electrons are injected in a time-averaged substantially uniform manner throughout the processing region in exposure to the substrate.
  • the method 800 can also include an operation for applying a bias voltage across the processing region from the substrate support so as to attract ions that are generated as a result of the injected electrons toward the substrate.
  • FIG. 9 shows a flowchart of a method 900 for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • the plasma-driven substrate processing systems 300A, 300B of Figures 5A through 6B, or combination thereof can be used to perform the method of Figure 9.
  • the method 900 includes an operation 901 for placing a substrate on a substrate support in exposure to a processing region.
  • the method 900 also includes an operation 903 for generating a plasma in a plasma generation region separate from the processing region.
  • the method 900 also includes an operation 905 for supplying reactive constituents of the plasma from the plasma generation region to the processing region.
  • the method 900 further includes an operation 907 for supplying power to one or more electrodes disposed within the processing region separate from the substrate support, whereby the power supplied to the one or more electrodes injects electrons from the one or more electrodes into the processing region so as to modify an ion density in the processing region to affect processing of the substrate.
  • the one or more electrodes includes a conductive band disposed outside a perimeter of the substrate support and above the substrate support in exposure to the processing region, such as the electrode 503 of Figure 5 A.
  • the conductive band is formed as a continuous structure that circumscribes the perimeter of the substrate support.
  • the one or more electrodes includes a planar conductive segment disposed above and over the substrate support in exposure to the processing region, such as the planar electrode 601 of Figure 6A.
  • the one or more electrodes includes both a conductive band disposed outside a perimeter of the substrate support and above the substrate support in exposure to the processing region, and a planar conductive segment disposed above and over the substrate support in exposure to the processing region.
  • the 907 includes supplying direct current power, radiofrequency power, or a combination of direct current power and radiofrequency power to the one or more electrodes. Also, in one embodiment, the power is supplied to one or more electrodes in a pulsed manner. In another embodiment, the power is supplied to one or more electrodes in a continuous manner. Also, in one embodiment, supplying power to one or more electrodes in the operation 907 includes alternating a polarity of electric charge on the one or more electrodes. Additionally, in one embodiment, the method can include an operation for applying a bias voltage across the processing region from the substrate support so as to attract ions that are generated as a result of the injected electrons toward the substrate.
  • FIG 10 shows a flowchart of a method 1000 for processing a semiconductor substrate, in accordance with one embodiment of the present invention.
  • the plasma-driven substrate processing system 300C can be used to perform the method of Figure 10.
  • the plasma-driven substrate processing system 300C can be combined with components of one or more of the plasma-driven substrate processing systems 300, 300A, and 300B to perform the method of Figure 10.
  • the method 1000 includes an operation 1001 for placing a substrate on a substrate support in exposure to a processing region.
  • the method 1000 also includes an operation 1003 for generating a plasma in a plasma generation region separate from the processing region.
  • the method 1000 also includes an operation 1005 for supplying reactive constituents of the plasma from the plasma generation region through a plurality of fluid transmission pathways into the processing region, whereby the reactive constituents of the plasma affect processing of the substrate.
  • the method 1000 further includes an operation 1007 for generating a supplemental plasma in the plurality of fluid transmission pathways.
  • the method 1000 further includes an operation 1009 for supplying reactive constituents of the supplemental plasma from the plurality of fluid transmission pathways into the processing region, whereby the reactive constituents of the supplemental plasma affect processing of the substrate.
  • generating the supplemental plasma in operation 1007 includes operating the plurality of fluid transmission pathways as either flow-through hollow cathodes, flow-through capacitively coupled regions, flow-through inductively coupled regions, flow-through magnetron driven regions, flow-through laser driven regions, or a combination thereof. Also, in one embodiment, generating the supplemental plasma in the plurality of fluid transmission pathways in operation 1007 includes transmitting direct current power, radiofrequency current power, or a combination of direct current power and radiofrequency power through the plurality of fluid transmission pathways. In one embodiment, the power is transmitted through the plurality of fluid transmission pathways in a pulsed manner. In another embodiment, the power is transmitted through the plurality of fluid transmission pathways in a continuous manner.
  • generating the supplemental plasma in the plurality of fluid transmission pathways in operation 1007 includes supplying a process gas to the interior of each of the plurality of fluid transmission pathways.
  • supplying reactive constituents of the plasma from the plasma generation region through the plurality of fluid transmission pathways into the processing region in operation 1005 includes operating an electrode disposed in the plasma generation region to drive charged species from the plasma generation region through the plurality of fluid transmission pathways into the processing region.
  • supplying reactive constituents of the supplemental plasma from the plurality of fluid transmission pathways into the processing region in operation 1009 includes operating an extraction grid disposed within the processing chamber to attract charged species from the plurality of fluid transmission pathways into the processing region.
  • the method 1000 can further include an operation for injecting electrons into the processing region over the substrate, whereby the injected electrons modify an ion density in the processing region to affect processing of the substrate. Also, in one embodiment, the method 1000 can include an operation for supplying power to one or more electrodes disposed within the processing region separate from the substrate support, whereby the power supplied to the one or more electrodes injects electrons from the one or more electrodes into the processing region so as to modify an ion density in the processing region to affect processing of the substrate.

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  • Plasma Technology (AREA)

Abstract

L'invention concerne un système de traitement de substrats de semi-conducteurs qui comprend une chambre de traitement, un support de substrat et une chambre à plasma séparée. La chambre à plasma est définie de manière à générer un plasma. Le système comprend aussi une pluralité de voies de transmission de fluide qui met la chambre à plasma en connexion fluidique avec la chambre de traitement. La pluralité de voies de transmission de fluide est définie pour fournir des constituants réactifs du plasma venant de la chambre à plasma à la chambre de traitement. Le système comprend en outre un dispositif d'injection d'électrons qui sert à injecter des électrons dans la chambre de traitement pour gérer une distribution d'énergie d'électrons dans la chambre de traitement afin de gérer, tour à tour, un rapport ions/densité radicalaire dans la chambre de traitement. Dans un mode de réalisation, une source de faisceau d'électrons est définie pour transmettre un faisceau d'électrons au travers de la chambre de traitement ci-dessus et en travers du support de substrat.
PCT/US2012/032920 2011-04-11 2012-04-10 Source de faisceaux électroniques découplée améliorée pour le traitement de semi-conducteurs WO2012142038A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201280018081.7A CN103620729B (zh) 2011-04-11 2012-04-10 用于半导体处理的电子束增强解耦源
JP2014505217A JP6001641B2 (ja) 2011-04-11 2012-04-10 半導体処理のための電子ビーム強化式分離型プラズマ源
SG2013071790A SG193943A1 (en) 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing
KR1020137029903A KR101900527B1 (ko) 2011-04-11 2012-04-10 반도체 프로세싱을 위한 e-빔 강화된 디커플링 소스

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US13/084,325 US20120258555A1 (en) 2011-04-11 2011-04-11 Multi-Frequency Hollow Cathode and Systems Implementing the Same
US13/084,325 2011-04-11
US13/104,923 US8900402B2 (en) 2011-05-10 2011-05-10 Semiconductor processing system having multiple decoupled plasma sources
US13/104,923 2011-05-10
US201161555639P 2011-11-04 2011-11-04
US61/555,639 2011-11-04
US13/357,044 2012-01-24
US13/357,003 2012-01-24
US13/357,003 US9177756B2 (en) 2011-04-11 2012-01-24 E-beam enhanced decoupled source for semiconductor processing
US13/356,962 US9111728B2 (en) 2011-04-11 2012-01-24 E-beam enhanced decoupled source for semiconductor processing
US13/356,962 2012-01-24
US13/357,044 US20120258607A1 (en) 2011-04-11 2012-01-24 E-Beam Enhanced Decoupled Source for Semiconductor Processing

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WO2012142038A1 true WO2012142038A1 (fr) 2012-10-18

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