WO2012141535A2 - Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci - Google Patents

Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci Download PDF

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WO2012141535A2
WO2012141535A2 PCT/KR2012/002831 KR2012002831W WO2012141535A2 WO 2012141535 A2 WO2012141535 A2 WO 2012141535A2 KR 2012002831 W KR2012002831 W KR 2012002831W WO 2012141535 A2 WO2012141535 A2 WO 2012141535A2
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zinc oxide
thin film
inorganic
zinc
ink composition
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PCT/KR2012/002831
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Korean (ko)
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WO2012141535A3 (fr
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조성윤
이창진
강영구
임종선
강영훈
정준영
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한국화학연구원
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Publication of WO2012141535A3 publication Critical patent/WO2012141535A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Definitions

  • the present invention relates to an inorganic semiconductor ink composition and an inorganic semiconductor thin film produced through the same.
  • the inorganic oxide semiconductor thin film has various properties, and thus is used for various purposes.
  • the zinc oxide (ZnO) thin film has a band gap of about 3.4 eV, can be formed at low temperatures, and exhibits high mobility.
  • it can be easily prepared in the form of nanoparticles or precursors (precursor), the solution process is possible at a low cost has recently attracted great interest in the application to thin film transistors.
  • the thin film transistor device is an important key device for switching one pixel in a display information device, and determines the performance of electronic products related to the current display, and forms a large market in the electronic information industry.
  • electronic products such as display devices form a low price point
  • the electronic information industry has an extremely low cost, large area processes, and mass production.
  • Thin film transistor device manufacturing using such a solution-based process has many researches based on organic semiconductors, but organic thin film transistors have not only basic characteristics such as mobility, flicker ratio, and current density, but also durability to maintain long life. And many challenges to be solved in terms of electrical reliability.
  • the solution process material using inorganic semiconductor material shows higher mobility than the organic semiconductor material, and the solution process material is classified into ink in the form of nanoparticles and sol-gel material in the form of precursors. can do.
  • Inorganic semiconductor ink has been reported compound semiconductor nanoparticles, such as CdSe or metal oxide nanoparticles, such as ZnO, such inorganic semiconductor nanoparticles are first prepared in the form of nanoparticles of inorganic semiconductor material through a precursor, etc.
  • inorganic nanoparticles have a low dispersity and a dispersant must be used to disperse the nanoparticles, and a high temperature of a process temperature must be used for crystal growth of the nanoparticles.
  • sol-gel material Another form of a solution process material using an inorganic semiconductor material is prepared in the form of a sol-gel and is in the form of a precursor.
  • the sol-gel material obtains desired semiconductor properties by transforming a precursor prepared by chemical synthesis into an inorganic oxide through a sol-gel process in which a thin film is formed by various solution processes and heat-treated in the presence of moisture in the air.
  • the method through the sol-gel process also requires a high process temperature for crystallization of the inorganic oxide thin film, and due to the very fast reaction rate, it is difficult to uniformly control the composition or defect control of the thin film through the solution process.
  • Keszler et al, US University of Oregon are producing the transistor 2 is Zn (OH) is known in the conventional indicating Zn (OH) excellent charge transfer and divalent spin coating the dissolved aqueous ammonia be used to be dissolved in an aqueous ammonia solution I've done it.
  • a transistor exhibiting a charge mobility of 6 cm 2 / V ⁇ s may be manufactured at a high temperature of 500 ° C. or higher, and a transistor exhibiting a charge mobility of about 1 cm 2 / V ⁇ s was manufactured at a low temperature of about 150 ° C. .
  • ZnO transistors by sintering with zinc acetate as a precursor.
  • the charge mobility of ZnO transistor with sintering temperature was 0.40 at 350 ° C, 2.65 at 400 ° C, 5.25 at 500 ° C, and 5.09 cm 2 / V ⁇ s at 600 ° C, respectively.
  • There is a problem that the mobility is sharply reduced J. Am. Chem. Soc., 2007, 129, pp. 2750).
  • the heat resistance temperature of the glass substrate or other coating material used in the display is 400 ° C. or lower, preferably 350 ° C. or lower, sintering is possible at low temperatures and a method of manufacturing a zinc oxide (ZnO) thin film having excellent characteristics is required. .
  • the inventors of the present invention while studying a method for producing a zinc oxide conductive film showing excellent properties, by dispersing the zinc oxide nanoparticles in the zinc oxide precursor, an inorganic semiconductor ink capable of producing a zinc oxide conductive film with improved charge mobility and flashing ratio characteristics
  • the composition was developed and the present invention was completed.
  • the present invention comprises a zinc oxide precursor solution, zinc oxide nanoparticles and a dispersion solvent, the inorganic oxide ink, characterized in that the zinc oxide nanoparticles are 0.1 to 50% by weight relative to the zinc oxide precursor solution To provide a composition.
  • the inorganic semiconductor ink composition and the inorganic semiconductor thin film manufactured by the same according to the present invention can be used as a channel material of the transistor device, thereby manufacturing an inorganic thin film transistor with improved electrical performance.
  • it is suitable for the solution process it is easy to manufacture a thin film, low temperature process is possible, and the zinc oxide precursor solution and the zinc oxide nanoparticles can be mixed to produce a dense and uniform thin film, and thus an excellent inorganic thin film The transistor can be manufactured.
  • FIG. 1 is a schematic view showing an inorganic thin film transistor manufactured according to the present invention.
  • FIG. 2 is a graph showing current transfer characteristics of an inorganic thin film transistor manufactured according to the present invention.
  • the present invention provides an inorganic semiconductor ink composition
  • a zinc oxide precursor solution comprising a zinc oxide precursor solution, zinc oxide nanoparticles and a dispersion solvent, wherein the zinc oxide nanoparticles are 0.1 to 50% by weight relative to the zinc oxide precursor solution.
  • the inorganic semiconductor ink composition according to the present invention comprises a zinc oxide precursor solution; Zinc oxide nanoparticles.
  • Zinc oxide is typically grown because it grows into a non-stoichiometric structure during crystal growth and uses electrons generated as a primary carrier source due to ionization of intrinsic defects such as invasive zinc atoms or oxygen vacancies. n-type semiconductor characteristics.
  • the zinc oxide has a wide bandgap, excellent light transmittance, excellent electric field effect compared to conventional amorphous silicon, and high charge mobility.
  • the zinc oxide is deposited as a thin film using an exposure or vacuum deposition process, a high process cost is generated, thereby reducing the process cost by manufacturing a zinc oxide thin film using a solution process.
  • the inorganic semiconductor ink composition according to the present invention can produce a compact zinc oxide thin film having no pores even at a low heat treatment temperature during the production of a zinc oxide thin film including zinc oxide nanoparticles, zinc oxide thin film prepared accordingly Has a characteristic of improving charge mobility.
  • the inorganic semiconductor ink composition according to the present invention is mixed and dispersed in 0.1 to 50% by weight of zinc oxide nanoparticles relative to the zinc oxide precursor solution. If the zinc oxide nanoparticles are mixed and dispersed in the zinc oxide precursor solution in an amount outside the above range, there is a problem that the charge mobility decreases.
  • the zinc oxide nanoparticles are preferably 5 to 20 nm in size. If the size of the zinc oxide nanoparticles is less than 5 nm, there is a problem that dispersion due to aggregation is difficult, and if the size of the zinc oxide nanoparticles exceeds 20 nm, the size of the nanoparticles is larger than the thickness of the thin film surface The shape is rough, and there is a problem in that the semiconductor characteristics of the thin film are deteriorated by the nanoparticles acting as a barrier to prevent electron movement.
  • the zinc oxide nanoparticles are directly mixed in the zinc oxide precursor solution due to the fine particle size, there is a problem that the zinc oxide nanoparticles are not well dispersed and aggregated.
  • the zinc oxide nanoparticles are first dispersed in a dispersion solvent to prepare a zinc oxide nanoparticle solution, and the prepared zinc oxide nanoparticle solution is mixed with a zinc oxide precursor solution to prepare an inorganic semiconductor ink composition.
  • the zinc oxide nanoparticles are preferably dispersed in 0.1 to 10% by weight relative to the dispersion solvent.
  • the zinc oxide nanoparticles are dispersed in less than 0.1% by weight, there is a problem that the improvement of charge mobility due to the addition of the zinc oxide nanoparticles does not appear, and the zinc oxide nanoparticles are dispersed in excess of 10% by weight. In this case, due to the addition of excessive zinc oxide nanoparticles there is a problem that is not dispersed due to aggregation.
  • the dispersion solvent may be used alone or in combination of two or more kinds of ammonium hydroxide, isopropyl alcohol, chlorobenzene, N-methyl pyrrolidone, ethanol amine, ethanol, methanol, etc. Ethanol can be used.
  • the zinc oxide precursor solution makes it possible to produce an inorganic semiconductor thin film through coating or printing.
  • the zinc oxide precursor solution is zinc hydroxide, zinc acetate, zinc formate, zinc oxalate, zinc nitrate, zinc propionate, and zinc propionate. ), Zinc acetylacetonate, zinc acrylate, zinc methacrylate, zinc sulfate, zinc chloride and their hydrates and mixtures thereof It is preferable to use a compound selected from the group consisting of as a starting material, but is not limited thereto. Any compound containing zinc may be used as a starting material of a zinc oxide precursor solution.
  • the zinc oxide precursor solution may be used in various manufacturing methods depending on the starting materials.
  • the starting material of the zinc oxide precursor solution is zinc nitrate dyhydrate
  • a white hydroxide compound produced after dissolving and reacting sodium hydroxide and zinc nitrate dihydrate in distilled water is obtained, and the hydroxide compound After washing to minimize impurities, it may be dissolved in an aqueous ammonia solution to prepare a zinc oxide precursor, and a zinc oxide precursor solution may be prepared by selecting an appropriate preparation method according to the starting material.
  • the inorganic semiconductor ink composition according to the present invention is prepared by mixing the zinc oxide nanoparticles dispersed solution and the zinc oxide precursor solution, wherein the nanoparticles are dispersed solution is homogeneously dispersed zinc oxide nanoparticles in a solvent As a state, it is easy to disperse the zinc oxide nanoparticles in the zinc oxide precursor solution, and the zinc oxide precursor solution is present in the liquid phase to be suitable for the solution process.
  • By mixing the solution in which the nanoparticles are dispersed and the zinc oxide precursor solution it can be used in a solution process having a low process cost, and an inorganic semiconductor ink composition in which the zinc oxide nanoparticles are homogeneously dispersed can be prepared.
  • the mixing of the solution in which the nanoparticles are dispersed and the zinc oxide precursor solution is preferably performed in a volume ratio of 1: 1.
  • the zinc oxide nanoparticle solution is mixed below the above range, sufficient zinc oxide nanoparticles cannot be provided to the ink composition to be prepared, so that electrical characteristics such as charge mobility during the production of the zinc oxide thin film are deteriorated.
  • the zinc oxide nanoparticles are mixed beyond the above range, there is also a problem that the charge mobility is lowered.
  • the inorganic semiconductor ink composition according to the present invention is suitable for a solution process to produce a zinc oxide thin film at a low process cost, and the zinc oxide thin film is dense and uniform through a low temperature process by mixing the zinc oxide precursor solution and zinc oxide nanoparticles Can be prepared.
  • the present invention is a.
  • step 1 Printing or coating the inorganic semiconductor ink composition on a substrate to prepare a film (step 1); And
  • step 2 It provides a method for producing a zinc oxide semiconductor thin film dispersed with zinc oxide nanoparticles comprising the step (step 2) of heat-treating the film prepared in step 1.
  • step 1 is a step of preparing a film by printing or coating the inorganic semiconductor ink composition on the substrate.
  • the printing of step 1 may use inkjet printing, roll printing, gravure printing, aerosol printing, screen printing, and the like, and the coating may be roll coating, spin coating, bar coating, spray coating, dip, or the like. (dip) coating or the like can be used.
  • the zinc oxide semiconductor thin film according to the present invention may be manufactured by selecting an easy method among the printing and coating methods, and it is preferable to use spin coating, but is not limited thereto.
  • step 2 is a step of heat-treating the film prepared in step 1.
  • the zinc oxide semiconductor thin film is manufactured by heat-treating the thin film coated on the substrate in step 1, and the zinc oxide nanoparticles are homogeneously dispersed in the prepared zinc oxide semiconductor thin film, thereby providing excellent electrical properties such as excellent charge mobility. Indicates.
  • the zinc oxide semiconductor thin film manufactured by the manufacturing method according to the present invention may be used as an N-type semiconductor thin film of an inorganic thin film transistor, thereby improving electrical characteristics such as charge mobility and blink rate of the inorganic thin film transistor. .
  • a substrate and a zinc oxide semiconductor thin film manufactured by the manufacturing method are sequentially stacked, and a source and a drain electrode are stacked on the zinc oxide semiconductor thin film.
  • inorganic thin film transistors which are spaced at regular intervals. A schematic diagram of an inorganic thin film transistor according to the present invention is shown in FIG.
  • the inorganic thin film transistor according to the present invention includes a zinc oxide semiconductor thin film in which zinc oxide nanoparticles are dispersed in the film, thereby excellent in electrical properties such as charge mobility and flashing ratio.
  • the present invention can be applied to various electronic devices such as a memory and a display, and in particular, it can be applied to a display device due to the high transmittance of a zinc oxide thin film.
  • a silicon (Si) wafer, a glass substrate, a plastic substrate, or the like may be used, and the substrate is selected according to a product to which the inorganic thin film transistor is to be applied.
  • the substrate is a silicon (Si) wafer substrate
  • an inorganic thin film transistor may be applied to a memory device, and in the case of a glass substrate, it may be applied to a display device.
  • a flexible characteristic may be applied. Applicable to the required electronic device.
  • the inorganic thin film transistor may further include a passivation layer stacked over the source and drain electrodes.
  • the passivation layer protects the source and drain electrodes, thereby improving the lifetime of the inorganic thin film transistor.
  • the inorganic thin film transistor may further include a gate electrode between the substrate and the zinc oxide semiconductor thin film.
  • the substrate when the substrate is a silicon (Si) wafer, the substrate itself may act as a gate electrode.
  • the inorganic thin film transistor when the material of the substrate is a material that cannot act as a gate electrode, the inorganic thin film transistor may further include a gate electrode, and the gate electrode may be a general silicon-based gate electrode, but is not limited thereto. It may be formed of a known general gate electrode material.
  • the gate electrode in the present application means that the gate insulator is included.
  • the present invention comprises the steps of coating the inorganic semiconductor ink composition in which zinc oxide nanoparticles are dispersed on the substrate and heat treatment to produce a zinc oxide semiconductor thin film (step 1);
  • step 2 Depositing a source and a drain electrode on the zinc oxide semiconductor thin film prepared in step 1 (step 2); And
  • step 3 It provides a method of manufacturing an inorganic thin film transistor comprising the step (step 3) of coating a protective film on the source and drain electrodes deposited in step 2 above.
  • step 1 is a step of coating an inorganic semiconductor ink composition in which zinc oxide nanoparticles are dispersed on a substrate (gate electrode) and heat treating to prepare a zinc oxide semiconductor thin film.
  • the zinc oxide semiconductor thin film of Step 1 is made of an inorganic semiconductor ink composition in which zinc oxide nanoparticles are dispersed, and the zinc oxide nanoparticles are evenly dispersed in the thin film. Accordingly, electrical characteristics such as charge mobility, blink rate, and the like of the zinc oxide semiconductor thin film are improved.
  • step 2 is a step of depositing a source (drain) and drain (drain) electrode on the zinc oxide semiconductor thin film prepared in step 1.
  • the source and drain electrodes are spaced apart from each other, and the deposition of the source and drain electrodes is preferably performed using an evaporator, but is not limited thereto. It doesn't happen.
  • step 3 is a step of coating a protective film on the source and drain electrodes deposited in step 2.
  • the passivation layer of step 3 By coating the passivation layer of step 3, the source and drain electrodes can be protected, thereby improving the lifetime of the inorganic thin film transistor.
  • the thickness of the passivation layer is preferably 500 to 2000 nm, and the passivation layer is formed in the thickness range, thereby preventing stability of the inorganic thin film transistor in air and preventing damage from the outside during the post process.
  • the protective layer of step 3 may be formed by coating a polymer that is polymethylmethacrylate (Poly methylmethacrylate, PMMA), polyimide (Polyimide) or polybenzoxazole (Polybenzoxazole),
  • the protective layer is an acrylic photocurable composition comprising a polymer such as methyl methacrylate (MMA), butyl methacrylate (BMA), fluorine-substituted acrylate, or the like, or a cardo-based photocurable composition such as Structural Formula 1 below UV light. Irradiation may be formed through a photocuring reaction, for example, the acrylic photocurable composition may be a composition disclosed in the Republic of Korea Patent No. 10-0140905, the cardo-based photocurable composition is Japanese Patent No. 3,148,429B The compositions as disclosed in the call may be used.
  • the photocurable composition may include 1 to 5% by weight of a photoinitiator, and may be cured by light irradiation such as ultraviolet rays after coating the photocurable composition.
  • a photoinitiator one or more types of photoinitiators can be selected and used. Examples of photoinitiators include Irgacure 369 (Ciba-geigy), Irgacure 184 (Ciba-geigy), and Darocur 1173 (Ciba-geigy), which are readily available on the market. Etc.
  • the manufacturing method may further include forming a gate electrode on the substrate before coating the inorganic semiconductor ink composition in step 1.
  • the gate electrode may be formed by coating a general gate electrode material known to those skilled in the art on a substrate, and the method of forming the gate electrode may be performed through a coating process such as spin coating or dip coating. It is not.
  • Zinc acetate dihydrate (Zn (CH 3 COO) 2 ⁇ H 2 O)) and potassium hydroxide (KOH) were used as starting materials, and methanol was used as a solvent.
  • the zinc acetate concentration was 0.1 mol / L and the potassium hydroxide concentration was 0.4 mol / L, respectively, dissolved in methanol, and stirred at a temperature of 60 ° C. for 1 hour to obtain a homogeneous and transparent solution.
  • the zinc acetate solution and potassium hydroxide solution dissolved in methanol were mixed in a volume ratio of 2: 1 in a round flask container to which a reflux condenser was connected, followed by stirring at a temperature of 60 ° C. for 3 hours. It was. After stirring, the mixture was cooled to room temperature, and the white precipitate except for the solvent was recovered to prepare zinc oxide nanoparticles.
  • Step 1 The zinc oxide nanoparticle solution was prepared by dispersing 36.6 mg of zinc oxide nanoparticles prepared in Preparation Example 1 in 10 ml of ethanol.
  • Step 2 Zinc nitrate dihydrate (Zn (NO 3 ) 2 H 2 O), starting material, at a concentration of 0.5 mol / L and sodium hydroxide (NaOH) at a concentration of 2.5 mol / L
  • 10 mL of the aqueous sodium hydroxide solution was added to 15 mL of the zinc nitrate dihydrate solution dropwise for 5 minutes, followed by stirring.
  • the white hydroxide compound generated after the reaction was dispersed, washed, and centrifuged in 20 mL of distilled water, and was recovered by minimizing impurities such as Na + and NO 3 ⁇ .
  • the recovered white hydroxide compound was dissolved in 50 mL of an aqueous solution of ammonia (NH 3 ) at a concentration of 6.6 mol / L to prepare a zinc oxide precursor solution, and the concentration of zinc in the prepared precursor solution was 0.15 mol / L.
  • NH 3 ammonia
  • Step 3 An inorganic semiconductor ink composition was prepared by mixing the zinc oxide nanoparticle solution of step 1 with 10 ml of zinc oxide precursor solution.
  • An inorganic semiconductor ink composition was prepared by mixing 12.2 mg of the zinc oxide nanoparticles prepared in Preparation Example 1 with 10 ml of the zinc oxide precursor solution prepared in Step 2 of Example 1.
  • An inorganic semiconductor ink composition was prepared by dispersing 12.2 mg of the zinc oxide nanoparticles prepared in Preparation Example 1 in 10 ml of an ammonium hydroxide solution, and then mixing it with 10 ml of the zinc oxide precursor solution prepared in Step 2 of Example 1.
  • An inorganic semiconductor ink composition was prepared using only 10 ml of the zinc oxide precursor solution prepared in step 2 of Example 1.
  • the inorganic semiconductor ink compositions of Examples and Comparative Examples were coated onto the glass substrate by spin coating or inkjet printing, and then heat-treated at 250 ° C. in a hotplate for 1 hour to prepare a semiconductor thin film.
  • An inorganic thin film transistor was manufactured by depositing a source / drain electrode having a width / length of 3000 ⁇ m / 50 ⁇ m in a thickness of 150 nm by using an evaporator on the semiconductor thin film.
  • a protective film is coated on the source and drain electrodes of the inorganic thin film transistor, and then heated at a temperature of 100 ° C. on a hot plate for 30 minutes. Was dried.
  • Acrylic photocurable composition A mixture of methyl methacrylate (MMA), methacrylic acid (MAA), epoxy acrylate and di-penta-erythrol-penta-acrylate (DPEPA)
  • MMA methyl methacrylate
  • MAA methacrylic acid
  • DPEPA di-penta-erythrol-penta-acrylate

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Abstract

La présente invention concerne une composition d'encre semi-conductrice inorganique, et un film mince semi-conducteur inorganique fabriqué avec celle-ci. En particulier, la composition d'encre semi-conductrice inorganique comprend une solution de précurseur d'oxyde de zinc, des nanoparticules d'oxyde de zinc et un solvant dispersant, et est caractérisée en ce que la quantité de nanoparticules d'oxyde de zinc représente 0,1 à 50 % en poids de la solution de précurseur d'oxyde de zinc. La composition d'encre semi-conductrice inorganique peut être utilisée comme matériau de canal d'un dispositif transistor, et un transistor à couches minces inorganiques avec des performances améliorées peut ainsi être obtenu. De plus, comme ladite composition est adéquatement appliquée dans un procédé liquide, la fabrication du film mince est facile, et un procédé à basse température est possible. Comme la solution de précurseur d'oxyde de zinc et les nanoparticules d'oxyde de zinc sont mélangées, un film mince compact et homogène peut être fabriqué. Par conséquent, un transistor à couches minces inorganiques très fiable peut être obtenu.
PCT/KR2012/002831 2011-04-15 2012-04-13 Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci WO2012141535A2 (fr)

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KR10-2011-0035119 2011-04-15
KR1020110035119A KR101165717B1 (ko) 2011-04-15 2011-04-15 무기 반도체 잉크 조성물 및 이를 통해 제조되는 무기 반도체 박막

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Cited By (2)

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CN103346264A (zh) * 2013-06-08 2013-10-09 苏州方昇光电装备技术有限公司 一种纳米氧化锌薄膜的制备方法以及一种有机太阳能电池的制备方法
EP2858099A4 (fr) * 2012-06-01 2015-05-20 Mitsubishi Chem Corp Procédé de production d'une couche semi-conductrice contenant de l'oxyde métallique et dispositif électronique

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KR101365800B1 (ko) 2013-03-25 2014-02-20 부산대학교 산학협력단 인듐 아연 산화물 반도체 박막트랜지스터의 제조방법 및 이에 의해 제조된 인듐 아연 산화물 반도체 박막트랜지스터

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KR20080033127A (ko) * 2006-10-12 2008-04-16 제록스 코포레이션 박막 트랜지스터
KR20080101734A (ko) * 2007-05-16 2008-11-21 제록스 코포레이션 박막 트랜지스터용 반도체 층
KR20090012782A (ko) * 2007-07-31 2009-02-04 삼성전자주식회사 산화아연 박막의 제조방법
KR20100011167A (ko) * 2008-07-24 2010-02-03 한국전자통신연구원 금속 산화물 나노입자의 제조방법, 이로부터 제조된 금속산화물 나노입자, 금속 산화물 박막의 제조방법, 금속산화물 박막을 포함하는 전자 소자

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2858099A4 (fr) * 2012-06-01 2015-05-20 Mitsubishi Chem Corp Procédé de production d'une couche semi-conductrice contenant de l'oxyde métallique et dispositif électronique
CN103346264A (zh) * 2013-06-08 2013-10-09 苏州方昇光电装备技术有限公司 一种纳米氧化锌薄膜的制备方法以及一种有机太阳能电池的制备方法

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