WO2012139367A1 - 一种人工电磁材料 - Google Patents

一种人工电磁材料 Download PDF

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Publication number
WO2012139367A1
WO2012139367A1 PCT/CN2011/081385 CN2011081385W WO2012139367A1 WO 2012139367 A1 WO2012139367 A1 WO 2012139367A1 CN 2011081385 W CN2011081385 W CN 2011081385W WO 2012139367 A1 WO2012139367 A1 WO 2012139367A1
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Prior art keywords
artificial
substrate
electromagnetic material
material according
microstructure
Prior art date
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PCT/CN2011/081385
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English (en)
French (fr)
Inventor
刘若鹏
栾琳
寇超锋
何方龙
赵治亚
叶金财
Original Assignee
深圳光启高等理工研究院
深圳光启创新技术有限公司
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Priority claimed from CN201110091136.4A external-priority patent/CN102738590B/zh
Priority claimed from CN201110163799.2A external-priority patent/CN102800973B/zh
Priority claimed from CN201110179773.7A external-priority patent/CN102810757B/zh
Application filed by 深圳光启高等理工研究院, 深圳光启创新技术有限公司 filed Critical 深圳光启高等理工研究院
Priority to EP11863605.9A priority Critical patent/EP2698872B1/en
Priority to US14/111,498 priority patent/US9799431B2/en
Priority to ES11863605T priority patent/ES2962234T3/es
Publication of WO2012139367A1 publication Critical patent/WO2012139367A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/02—Refracting or diffracting devices, e.g. lens, prism
    • H01Q15/08—Refracting or diffracting devices, e.g. lens, prism formed of solid dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/02—Refracting or diffracting devices, e.g. lens, prism
    • H01Q15/10—Refracting or diffracting devices, e.g. lens, prism comprising three-dimensional array of impedance discontinuities, e.g. holes in conductive surfaces or conductive discs forming artificial dielectric

Definitions

  • the present invention relates to a material, and more particularly to an artificial electromagnetic material. Background technique
  • the permittivity is a parameter of the material's response to the electric field.
  • an induced charge is generated to weaken the electric field.
  • the ratio of the applied electric field in the original vacuum to the electric field in the final material is the dielectric constant. Electricity rate.
  • any material has its specific dielectric constant value or dielectric constant curve under certain conditions.
  • Conventional dielectric constants range from 1 to 30, and materials with a dielectric constant of more than 30 are high dielectric constant materials.
  • a material with a higher dielectric constant is placed in the electric field, and the strength of the field will decrease appreciably within the dielectric material. Therefore, materials with a high dielectric constant are usually used to make capacitors.
  • the required dielectric constant value is much higher than the dielectric constant value of materials already in nature, and the existing dielectric constant. Higher insulation can't meet the requirements, which will create bottlenecks for technology and product development. In fact, it is difficult to achieve this requirement from naturally occurring materials. Therefore, people have turned to artificially manufactured metamaterials in order to achieve the above technical goals.
  • Metamaterials or artificial electromagnetic materials, are a new type of synthetic material that responds to electromagnetics, consisting of a substrate and an artificial microstructure attached to the substrate. Since the artificial microstructure is usually a structure having a certain geometrical arrangement of metal wires, it is possible to electromagnetically generate a response, so that the supermaterial as a whole exhibits electromagnetic characteristics different from those of the substrate, such as dielectric constant and magnetic permeability. However, existing metamaterials are affected by their structural characteristics and cannot obtain high dielectric constants, for example, higher than 30 or even 50. The dielectric constant value. Summary of the invention
  • the present invention provides an artificial electromagnetic material capable of obtaining a dielectric constant of 4 ⁇ .
  • the present invention provides an artificial electromagnetic material, the artificial electromagnetic material comprising at least one material layer, each material layer having a first substrate and a second substrate disposed opposite to each other, the first substrate A plurality of artificial microstructures are attached to the surface facing the second substrate.
  • the gap distance between the first and second substrates is equal to the thickness of the artificial microstructure.
  • the gap between the first and second substrates is less than 0.1 mm.
  • the artificial microstructure has a thickness of 0.005 to 0.05 mm.
  • the artificial microstructure has a thickness of 0.018 mm.
  • the thickness of the sheet of material is less than or equal to one tenth of the wavelength of the electromagnetic wave that the artificial electromagnetic material is to respond to.
  • the first substrate and the second substrate are virtually divided into a plurality of arrays of rectangular parallelepiped substrate units, one of which is attached to each of the substrate units.
  • the length, width and thickness of the substrate unit in each of the pair of substrate units are less than or equal to one tenth of the wavelength of the electromagnetic wave that the artificial electromagnetic material is to respond to.
  • the total length and total width of the artificial microstructure are not less than one-half of the length and width of the substrate unit in each pair of substrate units.
  • the artificial microstructures are wires arranged in a geometric pattern.
  • the artificial microstructure is a "work" shape or a flat snowflake shape.
  • the artificial microstructure is a planar snowflake-derived structure.
  • the artificial structure corresponds to a wavelength of an electromagnetic wave to which the artificial electromagnetic material is to be responsive, and the wave impedance Z of the artificial electromagnetic material satisfies the following condition: 0.8 Z 1.2.
  • the artificial microstructure further includes at least one line segment connected to an intermediate connection line of the I-shaped structure.
  • the line segments connected to the intermediate connecting line of the I-shaped structure appear in pairs and are symmetrical about a midpoint of the intermediate connecting line.
  • the two "work" shaped metal wires are arranged side by side, and the directions of the middle vertical lines of the "work" shapes of the two are on the same straight line.
  • the first substrate and the second substrate are virtually divided into a plurality of arrays of rectangular parallelepiped substrate units, each of which is attached with one of the artificial microstructures, and the electromagnetic wave frequency to which the artificial electromagnetic material is to be responsive is At 7.5 GHz, the size of each of the substrate units in the pair of rectangular parallelepiped substrate units is 4 mm X 4 mm x 4 mm.
  • the dimensions of the two "work" shaped metal wires are 1.5 mm x l.5 mm, 2 mm 2 mm, and the line width is 0.1 mm.
  • the artificial electromagnetic material of the present invention has the following beneficial effects: Since the first substrate and the second substrate on both sides of the artificial microstructure are in close contact with each other, the number of electric field lines passing through the substrate is increased, thereby effectively improving the equivalent medium of the metamaterial. Electric constant. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in the claims Other drawings may also be obtained from these drawings without the inventive labor.
  • FIG. 1 is a schematic view of an artificial electromagnetic material according to a first embodiment of the present invention
  • FIG. 2 is a schematic view showing a material sheet of the artificial electromagnetic material of FIG. 1;
  • Figure 3 is an exploded perspective view of the material sheet of Figure 2;
  • Figure 4 is a schematic view of the material unit of the sheet of material of Figure 2;
  • Figure 5 is an exploded perspective view of the material unit of Figure 4.
  • Figure 6 is a schematic view of a prior art material unit
  • Figure 7 is a schematic view of a material unit according to a second embodiment of the present invention.
  • Figure 8 is a schematic view of the artificial microstructure of Figure 7;
  • Figure 9 is a simulation diagram of electromagnetic waves passing through an artificial electromagnetic material using the material unit of Figure 7;
  • Figure 10 is a schematic view of a material unit of a third embodiment of the present invention. detailed description
  • the present invention relates to an artificial electromagnetic material 100, including at least one Material layer 1, as shown in Figure 1.
  • the material sheets 1 are superposed in a direction perpendicular to the layers, and are integrally assembled by mechanical connection, welding or bonding, and assembled as an integral artificial electromagnetic material, adjacent thereto.
  • the two material sheets 1 may be disposed in surface contact with each other, or may be spaced apart by a distance, and the distance may be less than the thickness of one material layer, or may be greater than or even several times and tens of times larger than one material layer. thickness.
  • each of the material sheets 1 includes two identical uniformly thick sheet substrates, which are a first substrate 2 and a second substrate 3, respectively.
  • the substrate may be composed of a high dielectric constant ceramic material such as FR-4, F4b, CEM1, CEM3 or TP-1.
  • the substrate may also be made of polytetrafluoroethylene, ferroelectric material, ferrite material or ferromagnetic material.
  • the two substrates are opposed to each other, and a plurality of arrays of artificial microstructures 4 are attached to the surface of the first substrate 2 facing the second substrate 3.
  • the surface of the substrate refers to two planes which are parallel to each other and have the largest area in the outer contour of the substrate, and the direction perpendicular to the plane is defined as the thickness direction of the substrate and the entire artificial electromagnetic material 100, and the length in the thickness direction of the substrate is the substrate.
  • the thickness of the layer, which is parallel to the thickness direction, is the side edge of the substrate.
  • the two substrates of each material layer are filled with a substance capable of connecting them, such as a liquid substrate material, which, after curing, bonds the existing two substrates to form an independent and inseparable individual, or both. Compression molding or the like is pressed together, so the distance between the two should be no more than the thickness of the artificial microstructure, or substantially equal to the thickness of the artificial microstructure.
  • the two substrates are virtually divided into a plurality of completely by a plurality of first planes which are equal in spacing and parallel to each other and another plurality of second planes which are perpendicular to the first plane and have the same pitch and are parallel to each other.
  • Each of the grids of the first substrate 2 is a first substrate unit 20, and each of the grids of the second substrate 3 is a second substrate unit 30, and an artificial micro is attached to a surface of each of the first substrate units 20.
  • Structure 4 then each of the opposing first substrate unit 20 and second substrate unit 30 and the artificial microstructures 4 on the first substrate unit 20 together form a material unit 5, as shown in FIG.
  • the entire sheet of material 1 can be regarded as an array composed of a plurality of material units 5 in one direction and columns in the other direction perpendicular to the direction.
  • Each of the rectangular shaped material units 5 in the present invention is preferably long and wide, The length of the thickness is not more than one tenth of the wavelength of the electromagnetic wave; of course, the length, the width, and the thickness of the thickness are not more than one-half of the wavelength of the electromagnetic wave.
  • the specific structure of the material unit 5 is as shown in FIG. 5, and includes a first substrate unit 20, an artificial microstructure 4 on the first substrate unit 20, and a second substrate unit 30.
  • the artificial microstructure 4 is a wire arranged in a certain geometric shape or a top shape, and the material of the wire is usually selected from a non-ferrous metal such as silver or copper having good electrical conductivity.
  • the artificial microstructure 4 of this embodiment is a "work" shaped wire comprising a linear first wire and two second wires vertically connected at both ends of the first wire.
  • the artificial microstructure 4 may also be other shapes, such as a planar two-dimensional snowflake shape, comprising two first wires perpendicularly intersecting each other into a "ten" shape and four vertically connected at each end of each of the first wires. Second wire.
  • the artificial microstructure 4 may also be a planar snowflake-shaped derivative structure, that is, in addition to the two first wires and the four second wires which are included in the planar snowflake shape, the vertical structure is also vertically connected to each of the second metals. a third wire at both ends of the wire, a fourth wire vertically connected to each end of each of the third wires, ..., and so on.
  • the artificial microstructure 4 of the present invention has various implementations as long as it is a structure having a certain geometry and capable of responding to an electromagnetic field, which is composed of a wire or a metal wire, as the artificial microstructure 4 of the present invention.
  • the thickness of the material unit 5 (that is, the thickness of the material sheet 1) is equal to the first substrate 2
  • the thickness, the thickness of the second substrate 3, and the distance between the two, and the distance between the first substrate 2 and the second substrate 3 is equal to the thickness of the artificial microstructure 4 plus the outer surface of the artificial microstructure 4. The distance to the surface of the second substrate 3 opposite thereto.
  • the first and second substrates 3 of the present invention are clamped such that the artificial microstructures 4 are directly in contact with the surface of the second substrate 3, and the separation distance between the first and second substrates is equal to that of the artificial microstructures 4. thickness.
  • the artificial microstructure 4 is very thin, when there is a certain error in the manufacturing, processing, and assembly process, the artificial microstructure 4 cannot directly adhere to the second substrate 3, but there is a gap, within a certain range. The gap is allowed.
  • the outer surface of the artificial microstructure 4 is substantially adhered to the second substrate 3, that is, the distance between the first and second substrates is substantially equal to the thickness of the artificial microstructure 4.
  • the thickness s of the artificial microstructure 4 of the artificial electromagnetic material is between 0.005 and 0.05 mm, and in the present invention, preferably 0.018 mm, the distance d between the first and second substrates is in the range of 0.005 to 0.5 mm, preferably It is less than 0.1mm.
  • the artificial electromagnetic material is known as a novel synthetic material capable of generating a special response to electromagnetic waves.
  • the existing artificial electromagnetic material is formed by stacking a plurality of identical substrates, and each substrate is provided with an artificial microstructure 4, The gap between adjacent substrates is relatively thick relative to the thickness of the artificial microstructure 4 (usually not on the same order of magnitude), so the range of action of each artificial microstructure 4 is limited to the substrate to which it is attached.
  • both of them are in contact with or substantially in contact with the artificial microstructure 4, so that the artificial microstructure 4 can simultaneously act on the first substrate in response to electromagnetic waves. 2 and the second substrate 3.
  • the artificial microstructure 4 is a "work" shape, which can be equivalent to a series connection of a capacitor and an inductor.
  • the edge effect of the capacitor generates an electric field
  • the artificial microstructure 4 has a substrate on both sides. Then, a part of the electric field lines will pass through the substrate, and the electric field lines passing through the substrate will respond to the electrons inside the substrate to resonate, and the equivalent dielectric constant of the entire material unit 5 changes.
  • the equivalent dielectric constant of the material unit 5 is proportional to the product of the field constant passing through the substrate and the dielectric constant of the substrate itself, that is, the more electric field lines passing through, the larger the dielectric constant of the substrate itself, the equivalent dielectric The larger the constant.
  • the substrate of the prior art and the present invention are both FR-4 materials having a dielectric constant of 4.8, and the artificial microstructures 4 are made of copper having good electrical conductivity or
  • the thickness a of the material layer 1 is 1 mm, and the length b and the width c of each material unit 5 are 1 mm; the artificial microstructure 4 is a "work" shape, and the thickness s is 0.018 mm.
  • the selected electromagnetic wave measurement frequency is between 2.4 and 2.6 GHz.
  • the thicknesses of the first and second substrates are both 0.49 mm, and the distance d between them is 0.02 mm.
  • the dielectric constant of the material unit 5 was measured to be between 30 and 35.
  • the thickness of the substrate is 0.982 mm, and the dielectric constant of the material unit measured is between 4 and 10.
  • the material unit 5 of the present invention having a two-layer substrate has a dielectric constant much higher than that of the prior art single-layer substrate, which is very large compared with the prior art artificial electromagnetic material.
  • the dielectric constant can even reach about 80, which is a value that cannot be achieved by natural materials and existing artificial electromagnetic materials, thereby satisfying special occasions. Special needs.
  • the artificial electromagnetic material 200 of the second embodiment of the present invention is different from the artificial electromagnetic material of the first embodiment in that the artificial microstructure of the embodiment is a snow-shaped derivative structure, and of course, the artificial microstructure may also be The snowflake structure, that is, a structure formed by two vertically orthogonal I-shaped structures and the intermediate connecting lines of the two I-shaped structures are vertically halved from each other.
  • the snow-like structure and its derived structure have the characteristics of isotropicity, which conforms to the characteristic requirements of the isotropic nature of air wave impedance of electromagnetic waves.
  • the electromagnetic impedance of the artificial electromagnetic material having the artificial microstructure to the electromagnetic wave of a specific frequency or frequency band can be made 1 or close to 1, thereby achieving impedance matching.
  • it is close to 1 and further limited to 0.8 Z 1.2.
  • the wave impedance is equal to 1 , which is the same as the wave impedance of the air to the electromagnetic wave, so that when the electromagnetic wave is incident on the artificial electromagnetic material, it is equivalent to incident into the air, the interface reflection is less, the electromagnetic wave completely passes through and the loss is small, and it can be used in the wave-transparent material.
  • the snowflake-shaped derivative structure is as shown in FIG. 7 and FIG. 8.
  • the artificial microstructure 202 includes orthogonal I-shaped structures 202a, and a plurality of intermediate connecting lines are connected to the intermediate connecting line of the I-shaped structure. The midpoint is symmetric of the line segment.
  • the simulation diagram of the electromagnetic wave passing through the artificial electromagnetic material 200 is as shown in FIG. 9. It can be seen from the solid line in FIG. 9 that the artificial electromagnetic material 200 has an impedance of approximately 1 for incident electromagnetic waves having a frequency of 3.5 GHz to 4.3 GHz, which is effective. The matching with the air impedance is realized. It can be seen from the broken line in the figure that the loss of the incident electromagnetic wave in the frequency band is relatively low. Therefore, the artificial electromagnetic material 200 in this embodiment can reduce the reflection of the incident electromagnetic wave and reduce the energy loss.
  • the artificial electromagnetic material of the third embodiment of the present invention is different from the artificial electromagnetic material of the first embodiment in that the artificial microstructure 320 includes two "work" shaped metal lines 320a of different sizes and not intersecting each other. 320b.
  • the two "work" shaped metal lines 320a, 320b have the same or similar electromagnetic field response to the electromagnetic field, a superposition response effect is formed instead of the mutual elimination. Therefore, preferably, two "workers" of each artificial microstructure are 320.
  • the "shaped metal wires 320a, 320b are arranged side by side, that is, the two pairs of parallel lines of the two are parallel to each other, and the two intermediate vertical lines are parallel to each other.
  • the directions of the middle vertical lines of the two "gong"-shaped metal wires 320a, 320b are on the same straight line so that the two are arranged one above another.
  • the total length and total width of the artificial microstructures 320 should be as large as possible, preferably not less than the first One-half of the length and width of a substrate unit 310.
  • the total length of the artificial microstructures 320 here is the distance between the uppermost and lowermost parallel lines; the total width of the artificial microstructures 320 is the longest of the four parallel lines of the two "work" fonts 320a, 320b The line of the parallel line is long.
  • each cube-shaped substrate unit is designed to be 4 mm X 4 mm x 4 mm, and two "work" shaped metal wires.
  • the dimensions of 320a, 320b are 1.5 mm X 1.5 mm, 2 mm 2 mm, respectively, and the line width is 0.1 mm.
  • the total length of the artificial microstructure 320 is 3.8 mm, and the total width is 2 mm.
  • the width is 13 GHz, and as the frequency increases, the loss of the refractive index is very small, which provides favorable conditions for achieving ultra-wideband effects.
  • the artificial microstructure of the embodiment makes the artificial electromagnetic material have a high resonance frequency, an effective working frequency bandwidth, and a wide application range.

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Abstract

本发明提供了一种人工电磁材料，所述人工电磁材料包括至少一个材料片层，每个材料片层具有相向设置的第一基板和第二基板，所述第一基板的面向第二基板的表面上附着有多个人造微结构。由于人造微结构两侧的第一基板和第二基板与其基本上紧密接触，使得穿过基板的电场线数量增多，有效提高了人工电磁材料的等效介电常数。

Description

一种人工电磁材料
本申请要求于 2011年 4月 12日提交中国专利局、申请号为 201110091136.4, 发明名称为 "一种高介电常数超材料" 的中国专利申请的优先权， 2011年 6月 17 日提交中国专利局、 申请号为 201110163799.2, 发明名称为 "宽频人工电磁 材料" 的中国专利申请的优先权， 2011年 6月 29日提交中国专利局、 申请号为 201110179773.7, 发明名称为 "一种阻抗与空气匹配的材料" 的中国专利申请的 优先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明涉及一种材料， 特别是涉及一种人工电磁材料。 背景技术
介电常数（permittivity )是材料对电场响应的一个参数， 材料在外加电场时 会产生感应电荷而削弱电场， 原真空中的外加电场与最终材料中电场的比值即 为介电常数， 又称诱电率。
自然界中， 任何一种材料在特定的条件下， 都有它特定的介电常数值或者 介电常数曲线。 常规的介电常数范围在 1~30之间， 介电常数超过 30的材料即 属于高介电常数材料。 介电常数较高的材料放在电场中， 场的强度会在电介质 材料内有可观的下降。 因此， 介电常数高的材料， 通常用来制造电容。
随着技术日新月异的发展， 人们对材料的应用要求越来越高， 在某些场合， 所需要的介电常数值远高于自然界已有的材料的介电常数值， 现有的介电常数 较高的绝缘体也不能达到要求， 这将为技术和产品研发造成瓶颈。 实际上， 自 然存在的材料都很难实现这种要求， 因此， 人们转向人工制造的超材料， 以期 实现上述技术目的。
超材料， 即人工电磁材料， 是一种能够对电磁产生响应的新型人工合成材 料， 由基板和附着在基板上的人造微结构组成。 由于人造微结构通常为金属线 排布成的具有一定几何图形的结构， 因此能够能电磁产生响应， 从而使超材料 整体体现出不同于基板的电磁特性， 例如介电常数和磁导率不同。 但是， 现有 的超材料受其结构特征的影响， 不能获得很高的介电常数， 例如高于 30甚至 50 的介电常数值。 发明内容
本发明提供一种人工电磁材料， 能够获得 4艮高的介电常数。
为解决上述技术问题， 本发明提供一种人工电磁材料， 所述人工电磁材料 包括至少一个材料片层， 每个材料片层具有相向设置的第一基板和第二基板， 所述第一基板的面向第二基板的表面上附着有多个人造微结构。
其中， 所述第一、 第二基板之间的间隙距离等于所述人造微结构的厚度。 所述第一、 第二基板之间的间隙距离小于 0.1mm。
所述人造微结构的厚度为 0.005~0.05mm。
所述人造微结构的厚度为 0.018mm。
所述材料片层的厚度小于等于所述人工电磁材料将要响应的电磁波波长的 十分之一。
所述第一基板和第二基板虚拟地划分为多个阵列排布的长方体基板单元 对， 每个基板单元对中间附着有一个所述人造微结构。
各所述基板单元对中的基板单元的长、 宽、 厚度均小于等于所述人工电磁 材料将要响应的电磁波波长的十分之一。
所述人造微结构的总长度及总宽度不小于各所述基板单元对中的基板单元 的长度及宽度的二分之一。
所述人造微结构为排布成几何图案的金属丝。
所述人造微结构为 "工" 字形或者平面雪花形。
所述人造微结构为所述平面雪花形的衍生结构。
所述人造 结构对应所述人工电磁材料将要响应的电磁波波长， 所述人工 电磁材料的波阻抗 Z满足如下条件： 0.8 Z 1.2。 所述人造微结构还包括至少一个与所述工字形结构的中间连接线相连的线 段。
与所述工字形结构的中间连接线相连的所述线段成对出现， 且关于所述中 间连接线的中点对称。 所述两个 "工" 字形金属线并排设置， 且二者的 "工" 字形中间竖线的方 向在同一直线上。
所述第一基板和第二基板虚拟地划分为多个阵列排布的长方体基板单元 对， 每个基板单元对中间附着有一个所述人造微结构， 所述人工电磁材料将要 响应的电磁波频率为 7.5GHz, 所述长方体基板单元对中的各基板单元的尺寸为 4mm X 4mm x 4mm。
所述两个 "工" 字形金属线的尺寸分别为 1.5mm x l.5mm、 2mm 2mm, 线宽为 0.1mm。
实施本发明的人工电磁材料， 具有以下有益效果： 由于人造微结构两侧的 第一基板和第二基板与其紧密接触， 使得穿过基板的电场线数量增多， 有效提 高了超材料的等效介电常数。 附图说明 例或现有技术描述中所需要使用的附图作筒单地介绍， 显而易见地， 下面描述 中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲， 在不付 出创造性劳动性的前提下， 还可以根据这些附图获得其他的附图。
图 1为本发明第一实施例的人工电磁材料的示意图；
图 2为图 1的人工电磁材料的材料片层的示意图；
图 3为图 2的材料片层的分解示意图；
图 4为图 2的材料片层的材料单元的示意图；
图 5为图 4的材料单元的分解示意图；
图 6是现有技术的材料单元的示意图；
图 7为本发明第二实施例的材料单元的示意图；
图 8为图 7的人造微结构的示意图；
图 9是电磁波通过采用图 7的材料单元的人工电磁材料的仿真图； 图 10为本发明第三实施例的材料单元的示意图。 具体实施方式
请一并参阅图 1及图 2, 本发明涉及一种人工电磁材料 100, 包括至少一个 材料片层 1 , 如图 1所示。 当材料片层 1有多个时， 各个材料片层 1沿垂直于片 层的方向叠加， 并通过机械连接、 焊接或粘合的方式组装成一体， 装成一体的 人工电磁材料， 其相邻两材料片层 1 之间可以表面相接触地设置， 也可间隔开 一段距离， 且所述距离可以小于一个材料片层的厚度， 也可大于甚至数倍、 数 十倍于一个材料片层的厚度。
参阅图 2、图 3可知，每个材料片层 1包括两块相同的均匀等厚的片状基板， 分别为第一基板 2和第二基板 3。基板可由 FR-4、 F4b、 CEM1、 CEM3或者 TP-1 等高介电常数陶瓷材料构成。 所述基板还可由聚四氟乙烯、 铁电材料、 铁氧材 料或者铁磁材料制成。
两个基板相向叠加， 且第一基板 2的面向第二基板 3的表面上附着有多个 阵列排布的人造微结构 4。 本文中，基板的表面特指基板外轮廓中相互平行且面 积最大的两个平面， 垂直于该平面的方向定义为基板和整个人工电磁材料 100 的厚度方向， 则基板厚度方向上的长度为基板的厚度， 与厚度方向平行的一圏 依次连接的平面为基板的侧边缘。
每个材料片层的两块基板之间填充可连接二者的物质例如液态基板原料， 其在固化后将已有的两基板粘合， 从而构成一个独立不可分开的个体， 或者二 者通过热压成型等方式压合到一起， 因此二者之间的距离应不大于人造微结构 的厚度， 或者基本等于人造微结构的厚度。
用一组间距相等且相互平行的多个第一平面和另一组均垂直于第一平面且 具有同样间距、 相互平行的多个第二平面， 将两个基板分别虚拟地划分为多个 完全相同的方体形网格， 其中第一平面和第二平面相互垂直且同时垂直于基板 的表面。
第一基板 2的每个网格为第一基板单元 20, 第二基板 3的每个网格为第二 基板单元 30,并使得每个第一基板单元 20的一表面上附着有一个人造微结构 4, 则每个相对的第一基板单元 20和第二基板单元 30以及第一基板单元 20上的人 造微结构 4, 共同构成一个材料单元 5 , 如图 4所示。 整个材料片层 1可以看作 是由多个材料单元 5 以一方向为行、 以垂直于该方向的另一方向为列组成的阵 列。
人工电磁材料是应用在一个特定的电磁场环境中的， 该电磁场环境中电磁 波的波长是预先已知或设定的。本发明中每个方体形材料单元 5,优选其长、宽、 厚度的长度不大于上述电磁波波长的十分之一； 当然， 其长、 宽、 厚度的长度 不大于电磁波波长的二分之一时均可。
材料单元 5的具体结构如图 5所示， 包括第一基板单元 20、 第一基板单元 20上的人造微结构 4、 第二基板单元 30。 人造微结构 4是排布成一定几何形状 或拓朴形状的金属丝， 金属丝的材料通常选用电导性良好的银、 铜等有色金属。 本实施例的人造微结构 4 为 "工" 字形金属丝， 包括直线型的第一金属丝和分 别垂直连接在第一金属丝两端的两根第二金属丝。
人造微结构 4也可以为其他形状， 如平面的二维雪花形， 其包括两个相互 垂直相交成 "十" 字形的第一金属丝和分别垂直连接在每个第一金属丝两端的 四根第二金属丝。 人造微结构 4还可以是平面雪花形的衍生结构， 即其除包括 平面雪花形所具有的两根第一金属丝和四根第二金属丝外， 还包括分别垂直连 接在每个第二金属丝两端的第三金属丝、 分别垂直连接在每个第三金属丝两端 的第四金属丝， ……， 依此类推。
当然， 本发明的人造微结构 4还有多种实现方式， 只要由金属丝或金属线 构成的具有一定几何图形且能够对电磁场产生响应的结构， 均可作为本发明的 人造微结构 4。
由于人造微结构 4附着在第一基板单元的表面上， 而构成人造微结构 4的 金属丝具有一定的厚度， 因此材料单元 5的厚度（也即材料片层 1的厚度）等 于第一基板 2的厚度、 第二基板 3的厚度以及二者之间的间隔距离之和， 而第 一基板 2与第二基板 3之间的间隔距离等于人造微结构 4的厚度加上人造微结 构 4外表面到与之相对的第二基板 3表面的距离。
优选的， 本发明的第一、 第二基板 3夹紧， 使得人造微结构 4直接与第二 基板 3表面贴合接触， 则第一、 第二基板之间的间隔距离等于人造微结构 4的 厚度。
不过， 由于人造微结构 4非常薄， 当制造、 加工、 组装过程中存在一定的 误差时， 人造微结构 4不能直接与第二基板 3贴合， 而是存在间隙， 在一定范 围内， 这种间隙是允许的。
因此， 在本发明中， 人造微结构 4外表面基本上与第二基板 3贴合， 也即 第一、 第二基板之间的间隔距离基本等于所述人造微结构 4 的厚度。 这里的基 本等于，是指上述间隔距离 d与人造微结构 4的厚度 s相当，普通意义上的相当 是指二者在同一个数量级内， 即 s d 10s, 本发明中进一步限定为 s d 2s, 优选 d=s。
通常， 人工电磁材料的人造微结构 4的厚度 s在 0.005~0.05mm之间， 本发 明中优选为 0.018mm, 则第一、 第二基板的间隔距离 d在 0.005~0.5mm的范围 内， 优选为小于 0.1mm。
已知人工电磁材料是一种能够对电磁波产生特殊响应的新型人工合成材 料， 现有的人工电磁材料是由多个相同的基板叠加而成， 而每块基板上都设置 有人造微结构 4,相邻基板之间的间隙相对于人造微结构 4的厚度来说是比较厚 的 （通常不处于同一个数量级上）， 因此每个人造微结构 4的作用范围仅限在所 附着的基板。
而本发明中， 由于第一基板 2和第二基板 3夹紧，使二者均与人造微结构 4 接触或基本接触， 使得人造微结构 4在对电磁波产生响应时可以同时作用在第 一基板 2和第二基板 3上。
例如在图 5所示的实施例中， 人造微结构 4为 "工" 字形， 可以等效为一 个电容与电感的串联， 电容存在边缘效应会产生电场， 人造微结构 4 两侧均有 基板， 则一部分电场线会穿过基板， 穿过基板的电场线会对基板内部的电子产 生响应， 使其谐振， 则整个材料单元 5 的等效介电常数发生改变。 材料单元 5 的等效介电常数与穿过基板的场线和基板自身的介电常数的乘积成正比， 即穿 过的电场线越多， 基板自身的介电常数越大， 等效介电常数也越大。
现有人工电磁材料上的人造微结构在对电磁波产生响应时， 只有人造微结 构一侧的场线穿过所附着的基板， 另一侧因不与另一侧基板接触而闲置； 本发 明中， 人造微结构 4两侧的场线将分别穿过第一基板 2和第二基板 3 , 使得穿过 的电场线数量增多， 从而提高材料单元 5 的介电常数， 最终提高整个人工电磁 材料的介电常数。
例如， 在一对比实施例中， 如图 5、 图 6所示， 现有技术和本发明的基板均 为介电常数为 4.8的 FR-4材料， 人造微结构 4选用电导性良好的铜或银等有色 金属， 材料片层 1的厚度 a均为 1mm, 每个材料单元 5的长 b、 宽 c均为 1mm; 人造微结构 4为 "工" 字形， 厚度 s为 0.018mm, 金属线的线宽 w均为 0.1mm, 竖直的第一金属丝长 H=0.8mm, 两平行的第二金属丝长 L=0.8mm。 选取的电磁 波测量频点是 2.4~2.6GHz之间。 图 5所示的本发明中， 第一、 第二基板的厚度均为 0.49mm, 二者之间的间 隔距离 d为 0.02mm。 测得该材料单元 5的介电常数在 30~35之间。
图 6所示的现有技术中， 基板的厚度为 0.982mm, 测得的该材料单元的介 电常数在 4~10之间。
可见， 本发明的具有双层基板的材料单元 5 , 其介电常数远远高于现有技术 的单层基板的材料单元 5 , 与现有技术的人工电磁材料相比， 将显示出非常大的 优势。
另外， 若采用介电常数高的基板， 例如选用陶瓷作为基板， 则介电常数甚 至可以达到 80左右， 这是自然界材料和现有的人工电磁材料所不能达到的值， 从而满足一些特殊场合的特殊需求。
请参阅图 7 ,本发明第二实施例的人工电磁材料 200与第一实施例的人工电 磁材料的区别在于， 本实施例的人造微结构为雪花形的衍生结构， 当然人造微 结构也可以为雪花形结构， 即由两个垂直正交的工字形结构、 且两工字形结构 的中间连接线互相垂直平分而形成的结构。 采用这种雪花型结构及其衍生结构， 具有各向同性的特征， 符合空气对电磁波的波阻抗各向同性的特征要求。
进一步地， 通过设计特定的尺寸， 能够使具有该人造微结构的人工电磁材 料对特定频率或频段的电磁波的波阻抗 Z为 1或接近于 1 , 从而实现阻抗匹配。 这里的接近于 1 , 进一步限定为 0.8 Z 1.2。 波阻抗等于 1 , 与空气对电磁波的 波阻抗相同， 使得电磁波入射到该人工电磁材料时相当于入射到空气中， 界面 反射少， 电磁波完全穿过而损耗少， 可用在透波材料中。
上述雪花形的衍生结构如图 7及图 8所示， 人造微结构 202包括相互正交 的工字形结构 202a, 在工字形结构的中间连接线上还连接有多条相对于所述中 间连接线的中点对称的线段。
电磁波通过该人工电磁材料 200的仿真图如图 9所示， 由图 9中的实线可 知该人工电磁材料 200对于频率为 3.5GHz~4.3GHz的入射电磁波其波阻抗均接 近于 1 , 能有效地实现与空气阻抗的匹配， 由图中虚线可知在该频段内入射电磁 波的损耗比较低， 因此采用本实施例中的人工电磁材料 200 可以减少入射电磁 波的反射， 降低能量损耗。
当需要在其他频段与空气进行匹配时， 可以通过改变材料单元的尺寸或者 造微结构尺寸来实现， 尺寸变小匹配频段后移， 尺寸变大匹配频段前移。 请参阅图 10, 本发明第三实施例的人工电磁材料与第一实施例的人工电磁 材料的区别在于， 人造微结构 320 包括两个尺寸不同且互不相交的 "工" 字形 金属线 320a、 320b。 为了使两个 "工" 字形金属线 320a、 320b对电磁场具有相 同或相近的电磁场响应， 形成叠加响应效果而非相互 4氏消， 因此， 优选的， 每 个人造微结构的 320两个 "工" 字形金属线 320a、 320b并排设置， 即二者的两 对平行线相互平行， 两中间竖线相互平行。
本发明中， 优选两个 "工" 字形金属线 320a、 320b的中间竖线的方向在同 一直线上， 使得二者一上一下地排布。
由于每个材料单元 340的折射率与人造微结构 320相对于第一基板单元 310 表面所占据的表面比例有关， 因此人造微结构 320 的总长度和总宽度应尽可能 大， 优选分别不小于第一基板单元 310 的长度和宽度的二分之一。 这里的人造 微结构 320 的总长度， 为最上面和最下面两条平行线之间的距离； 人造微结构 320的总宽度， 为两个 "工" 字形 320a、 320b的四条平行线中最长的那条平行 线的线长。
例如， 当本发明的人工电磁材料所要应用的工作环境是在频率为 7.5GHz的 电磁波中， 则设计每个立方体形的基板单元的尺寸为 4mm X 4mm x 4mm, 两个 "工" 字形金属线 320a、 320b的尺寸分别为 1.5mm X 1.5mm、 2mm 2mm, 线 宽为 0.1mm, 人造微结构 320的总长度为 3.8mm, 总宽度为 2mm。 宽为 13GHz内， 随着频率的提高， 折射率的损耗非常小， 这便为实现超宽频效 果提供有利条件。 而现有的只有一个 "工" 字形的人造微结构， 其带宽则很难 达到上述结果。
本实施例的人造微结构， 使得其人工电磁材料的谐振频率高， 有效工作频 带宽， 可应用范围广。
以上所揭露的仅为本发明几种较佳实施例而已， 当然不能以此来限定本发 明之权利范围， 因此依本发明权利要求所作的等同变化， 仍属本发明所涵盖的 范围。

Claims

权 利 要 求
1. 一种人工电磁材料， 其特征在于， 所述人工电磁材料包括至少一个材料 片层， 每个材料片层具有相向设置的第一基板和第二基板， 所述第一基板的面 向第二基板的表面上附着有多个人造微结构。
2. 如权利要求 1所述的人工电磁材料， 其特征在于， 所述第一、 第二基板 之间的间隙距离等于所述人造微结构的厚度。
3. 如权利要求 1或 2所述的人工电磁材料， 其特征在于， 所述第一、 第二 基板之间的间隙距离小于 0.1mm。
4. 如权利要求 3所述的人工电磁材料， 其特征在于， 所述人造微结构的厚 度为 0.005~0.05mm。
5. 如权利要求 4所述的人工电磁材料， 其特征在于， 所述人造微结构的厚 度为 0.018mm。
6. 如权利要求 1所述的人工电磁材料， 其特征在于， 所述材料片层的厚度 小于等于所述人工电磁材料将要响应的电磁波波长的十分之一。
7. 如权利要求 1或 2所述的人工电磁材料， 其特征在于， 所述第一基板和 第二基板虚拟地划分为多个阵列排布的长方体基板单元对， 每个基板单元对中 间附着有一个所述人造微结构。
8. 如权利要求 7所述的人工电磁材料， 其特征在于， 各所述基板单元对中 的基板单元的长、 宽、 厚度均小于等于所述人工电磁材料将要响应的电磁波波 长的十分之一。
9. 如权利要求 8所述的人工电磁材料， 其特征在于， 所述人造微结构的总 长度及总宽度不小于各所述基板单元对中的基板单元的长度及宽度的二分之
10. 如权利要求 1所述的人工电磁材料， 其特征在于， 所述人造微结构为排 布成几何图案的金属丝。
11. 如权利要求 10所述的人工电磁材料， 其特征在于， 所述人造微结构为
"工" 字形或者平面雪花形。
12. 如权利要求 11所述的人工电磁材料， 其特征在于， 所述人造微结构为 所述平面雪花形的衍生结构。
13. 如权利要求 1所述的人工电磁材料， 其特征在于， 所述人造微结构对应 所述人工电磁材料将要响应的电磁波波长， 所述人工电磁材料的波阻抗 Z满足 如下条件： 0.8 Z 1.2。
14. 如权利要求 13所述的人工电磁材料， 其特征在于， 所述人造微结构包 括相互正交的两个工字形结构。
15. 如权利要求 14所述的人工电磁材料， 其特征在于， 所述人造微结构还 包括至少一个与所述工字形结构的中间连接线相连的线段。
16. 如权利要求 15所述的人工电磁材料， 其特征在于， 与所述工字形结构 的中间连接线相连的所述线段成对出现， 且关于所述中间连接线的中点对称。
17. 如权利要求 10所述的人工电磁材料， 其特征在于， 所述人造微结构包 括两个尺寸不同且互不相交的 "工" 字形金属线。
18. 如权利要求 17所述的人工电磁材料， 其特征在于， 所述两个 "工" 字 形金属线并排设置， 且二者的 "工" 字形中间竖线的方向在同一直线上。
19. 如权利要求 18所述的人工电磁材料， 其特征在于， 所述第一基板和第 二基板虚拟地划分为多个阵列排布的长方体基板单元对， 每个基板单元对中间 附着有一个所述人造微结构， 所述人工电磁材料将要响应的电磁波频率为 7.5GHz, 所述长方体基板单元对中的各基板单元的尺寸为 4mm 4mm 4mm。
20. 如权利要求 19所述的人工电磁材料， 其特征在于， 所述两个 "工" 字 形金属线的尺寸分别为 1.5mm x 1.5mm、 2mm 2mm, 线宽为 0.1mm。
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