WO2012129790A1 - Procédé et dispositif permettant une mise en forme de faisceau, module de source de lumière et dispositif permettant un affichage laser - Google Patents

Procédé et dispositif permettant une mise en forme de faisceau, module de source de lumière et dispositif permettant un affichage laser Download PDF

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Publication number
WO2012129790A1
WO2012129790A1 PCT/CN2011/072298 CN2011072298W WO2012129790A1 WO 2012129790 A1 WO2012129790 A1 WO 2012129790A1 CN 2011072298 W CN2011072298 W CN 2011072298W WO 2012129790 A1 WO2012129790 A1 WO 2012129790A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor laser
tube
laser array
light
array
Prior art date
Application number
PCT/CN2011/072298
Other languages
English (en)
Chinese (zh)
Inventor
田有良
闫国枫
李巍
陈昱
Original Assignee
青岛海信信芯科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 青岛海信信芯科技有限公司 filed Critical 青岛海信信芯科技有限公司
Priority to PCT/CN2011/072298 priority Critical patent/WO2012129790A1/fr
Publication of WO2012129790A1 publication Critical patent/WO2012129790A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Definitions

  • the present invention relates to the field of optics, and in particular to a beam shaping method and apparatus and a laser display source module and apparatus.
  • BACKGROUND OF THE INVENTION Laser display technology has the characteristics of large color gamut, low power consumption, long life, and the like, and has begun to be applied in television, micro projection, commercial and entertainment systems.
  • the red and blue portions of the laser source are mainly realized by a semiconductor laser.
  • the beam quality of the semiconductor laser is poor, it is necessary to beam-shave the light output from the semiconductor laser by the fiber coupling output for laser display.
  • 1 is a schematic view showing the structure and a light beam of a single-tube semiconductor laser according to the related art. As shown in FIG.
  • a semiconductor laser chip 12 is grown on a heat sink 10, the beam quality is very poor, has a very large divergence angle, and is vertical.
  • the beam quality is very different, the divergence angle is large in the fast axis 13 direction, and the divergence angle is 4 in the slow axis 14 direction.
  • a single-tube semiconductor laser 20 of a strip array is used. As shown in Fig. 2, several single-tube semiconductor lasers are sequentially arranged in a straight line for the purpose of realizing high power output.
  • a semiconductor laser beam shaping device In response to this problem, a semiconductor laser beam shaping device is provided in the prior art.
  • the semiconductor laser beam shaping device mainly uses a trapezoidal mirror to realize beam shaping of a single-tube semiconductor laser array.
  • the design of the ladder mirror in this patent is too simple, which can beam shape the single-sided semiconductor laser, and is not fully utilized. The space completes the beam shaping process.
  • no effective solution has been proposed yet.
  • SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a beam shaping method and apparatus and a laser display source module and apparatus to solve the above problems.
  • a beam shaping device for a semiconductor laser array is provided.
  • the beam shaping device of the semiconductor laser array includes a step mirror, a first single tube semiconductor laser array, and a second single tube semiconductor laser array, wherein the step mirror includes: a plurality of reflecting portions for reflecting the received light; and a plurality of a support portion, configured to connect each of the plurality of reflective portions, wherein a reflective film is disposed on both sides of the plurality of reflective portions to form a first reflective surface and a second reflective surface, the first single-tube semiconductor laser
  • the light emitting surface of the array corresponds to the first reflecting surface of the step mirror; the light emitting surface of the second single tube semiconductor laser array corresponds to the second reflecting surface of the step mirror.
  • a beam shaping method of a semiconductor laser array includes: reflecting light from the first single-tube semiconductor laser array through a first reflecting surface of the step mirror; and reflecting light from the second single-tube semiconductor laser array through a second reflecting surface of the step mirror
  • the step mirror includes: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein, on both sides of the plurality of reflecting portions A reflective film is disposed to form the first reflective surface and the second reflective surface.
  • a fiber coupling device for a semiconductor laser array comprising the beam shaping device of the semiconductor laser array provided by the present invention.
  • a laser display light source module including the fiber coupling device of the semiconductor laser array provided by the present invention is provided.
  • a laser display device including the laser display light source module provided by the present invention is provided.
  • a beam shaping device comprising a semiconductor laser array comprising: a step mirror, a first single tube semiconductor laser array and a second single tube semiconductor laser array, wherein the step mirror is used
  • the method includes: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein the reflective film is disposed on both sides of the plurality of reflecting portions Forming a first reflecting surface and a second reflecting surface, the light emitting surface of the first single tube semiconductor laser array corresponds to the first reflecting surface of the step mirror; and the light emitting surface of the second single tube semiconductor laser array corresponds to the step mirror
  • the two reflective surfaces can realize beam shaping of the semiconductor laser arrays on both sides through a step mirror, which solves the problem in the prior art.
  • FIG. 1 is a schematic diagram of a structure and a light beam of a single-tube semiconductor laser according to the related art
  • FIG. 2 is a schematic structural view of a single-tube semiconductor laser array according to the related art
  • FIG. 3 is a semiconductor laser array according to an embodiment of the present invention.
  • 4 is a schematic view of a step mirror according to an embodiment of the present invention
  • FIG. 5 is a schematic view of a slow axis collimating lens according to an embodiment of the present invention
  • FIG. 3 is a schematic view of a beam shaping device of a semiconductor laser array according to a first embodiment of the present invention.
  • the beam shaping device of the semiconductor laser array includes: a step mirror 30, a first single-tube semiconductor laser array A, and a second single-tube semiconductor laser array B, wherein the step mirror
  • the 30 includes: a plurality of reflecting portions 301 (shown in FIG. 4) for reflecting the received light; and a plurality of supporting portions 302 (shown in FIG. 4) for respectively connecting the plurality of reflecting portions 301
  • Each of the reflection portions wherein a reflective film is disposed on both sides of the plurality of reflection portions 301 to form a first reflective surface and a second reflective surface
  • the light-emitting surface of the first single-tube semiconductor laser array A corresponds to the first reflective surface of the step mirror; the light-emitting surface of the second single-tube semiconductor laser array B corresponds to the second reflective surface of the step mirror 30.
  • the step mirror can simultaneously reflect the first single tube The light of the semiconductor laser array and the second single-tube semiconductor laser array, thereby enabling the same step mirror to be used when transmitting light from two single-tube semiconductor laser arrays or two or more single-tube semiconductor laser arrays
  • the semiconductor lasers on both sides are beam-shaped, so that the beam shaping process can be fully utilized and the structure can be simplified.
  • the first single-tube semiconductor laser array A and the second single-tube semiconductor laser array B each include a plurality of single-tube light-emitting regions
  • the beam shaping device of the semiconductor laser array further includes: a plurality of fast-axis collimating mirrors 311 disposed on Between the first single-tube semiconductor laser array A and the step mirror 30 and between the plurality of fast-axis collimating mirrors 321, the second single-tube semiconductor laser array B and the step mirror 30, and respectively corresponding to the first single-tube semiconductor laser array a plurality of single-tube light-emitting regions of A and a plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array B; a first '1'-man axis collimating mirror 312 disposed in a first light-emitting direction of the step mirror 30; The two slow-axis collimating mirrors 322 are disposed in the second light-emitting direction of the step mirror 30.
  • the plurality of single-tube light-emitting regions of the first single-tube semiconductor laser array A and the plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array B respectively correspond to one of the plurality of reflective portions, and a plurality of Each of the reflecting portions has a 45-degree angle with its corresponding single-tube light-emitting region.
  • each of the plurality of reflecting portions emits light in a plurality of single tubes of the first single-tube semiconductor laser array A
  • the projection lengths of the light-emitting surfaces of the plurality of single-tube light-emitting regions of the region and the second single-tube semiconductor laser array B are respectively equal to the lengths of the light-emitting surfaces corresponding thereto.
  • the light beam having the gap emitted from the single-tube semiconductor laser array A is reflected by the step mirror 30, and becomes a combined beam having no gap, so that the gap of the light beams emitted from the individual single-tube semiconductor lasers can be eliminated.
  • the width of the 'I axis only collimating mirror 312 or 322 is greater than or equal to the projected width of the step mirror 30 in its light exiting direction.
  • the light incident surfaces of the first '1" MANN axis collimating mirror 312 and the second Sigma axis collimating mirror 322 are disposed in parallel with each other.
  • the light incident surface of the 322 is arranged in a parallel structure, which is advantageous for better simplification of the structure and for focusing of the slow axis collimating mirror.
  • the first single tube semiconductor laser array A is a single tube semiconductor laser line array or a single tube.
  • the second single-tube semiconductor laser array B is a single-tube semiconductor laser array or a single-tube semiconductor laser array.
  • the first single-tube semiconductor laser array A is a single-tube semiconductor laser array
  • the projection length of the step mirror 30 in the direction of the first single-tube semiconductor laser line array is equal to the length of the first single-tube semiconductor laser line array
  • the second single-tube semiconductor laser array B is a single-tube semiconductor laser line array
  • the step mirror 30 is The projection length of the second single-tube semiconductor laser in the direction of the line array is equal to the length of the second single-tube semiconductor laser line array.
  • the single-tube can be well eliminated by the reflection of the step mirror 30.
  • the projection width of the step mirror in the direction of the first single-tube semiconductor laser array is equal to the first The width of the single-tube semiconductor laser array; when the second single-tube semiconductor laser array B is a single-tube semiconductor laser array, the projection width of the step mirror in the direction of the second single-tube semiconductor laser array is equal to the second single-tube semiconductor laser surface Width of the array.
  • the gap of the laser light emitted by the array of the single-tube semiconductor laser can be well eliminated by the reflection of the step mirror 30.
  • a single-tube semiconductor laser array A several single-tube semiconductors are used.
  • the lasers are sequentially arranged in a straight line to enable high power output.
  • the semiconductor laser has a very large divergence angle in the fast axis direction
  • the cymbal lens is used as the fast axis collimating mirror 311.
  • the beam is close to parallel light in the fast axis direction
  • the illuminating surface of each single-tube semiconductor laser A fast axis collimating mirror 311 is mounted, and the light emitting surface of the semiconductor laser is close to the fast axis collimating mirror 311, which is advantageous for collimation and focusing of the beam, and due to the divergence angle of the semiconductor laser in the slow axis direction.
  • the step mirror 30 further includes a plurality of supporting portions for connecting the plurality of reflecting portions, wherein the plurality of supporting portions are parallel to each other, and the plurality of reflecting portions are parallel to each other.
  • the width of the 'I axis only collimating mirror 312 or 322 is greater than or equal to the projected width of the step mirror 30 in its light exiting direction. Further preferably, by making the width of the ⁇ man axis collimating mirror 312 or 322 equal to the projection width of the step mirror 30 in its light exiting direction, the width of the slow axis collimating mirror 312 or 322 can be made exactly equal to the beam reflected by the step mirror 30. The width, which saves costs.
  • a symmetrical spot can be obtained and then coupled into the optical fiber.
  • the single-tube semiconductor lasers are arranged in two rows of symmetry.
  • the two rows of semiconductor laser tubes A and B are opposite each other in a straight line, and a step mirror 30 is placed in the middle, and each of the single-tube light-emitting areas corresponds to a light-emitting surface.
  • the mirror surface of the lens on the light-emitting surface of the semiconductor laser is exactly equal to the length of the light-emitting surface
  • the front and back of the lens are coated with a high-reflection film, so that the two rows of single-tube semiconductor lasers A and B are respectively aligned through the fast axis
  • the light emitted by each single-tube semiconductor laser is arranged next to each other in the slow axis direction.
  • the slow axis collimation is performed by the slow axis collimating mirror 312 and the slow axis collimating mirror 322, respectively, and focused by the focusing lens 313 and the focusing lens 323 to be respectively coupled into the optical fibers 314 and 324, so that the original divergence angle is small.
  • the beam expands in the direction of the slow axis, thereby equalizing the beam quality in the direction of the fast and slow axis.
  • beam shaping of the two rows of single-tube semiconductor lasers A and B is realized by using the step mirror 30 coated on both sides, and the gap between the two rows of single-tube semiconductor lasers is eliminated, and the step mirror is The reflected beam 30) is reflected by a slow axis collimating mirror 312 and a focusing lens into the optical fiber as an output of the laser light source module.
  • the single-tube semiconductor laser array is a single-tube semiconductor laser line array or a single-tube semiconductor laser line array array, wherein when the single-tube semiconductor laser array is a single-tube semiconductor laser line array, the step mirror 30 is in a single-tube semiconductor laser
  • the projection length in the direction of the line array is equal to the length of the single-tube semiconductor laser array; when the single-tube semiconductor laser array is a single-tube semiconductor laser array, the projection width of the step mirror 30 in the direction of the array of the single-tube semiconductor laser is equal to that of the single-tube semiconductor laser The width of the area array.
  • Single-tube semiconductor laser arrays sometimes need to be designed as single-tube semiconductor laser arrays due to factors such as heat dissipation.
  • each step of the step mirror is equipped with one lens, and each lens is coated with a high layer.
  • Anti-film the size of each lens is designed so that the light is just reflected, and then the lenses are arranged in parallel in the direction parallel to the light-emitting surface, so that after the reflection, the beams emitted by each single-tube semiconductor laser are sequentially arranged, thus eliminating the gap.
  • the laser on the other side also reflects the same beam. Since the single-tube semiconductor laser has a large divergence in the fast axis direction and a small divergence in the slow axis direction, the beam is sequentially arranged on the slow axis by reflection, so that the beam quality in the fast and slow axis directions can be equalized. And the gap between the single-tube semiconductor laser tubes is eliminated, which is beneficial to the next step of fiber coupling.
  • 5 is a slow axis collimating mirror 312, and
  • FIG. 6 is a focusing lens.
  • the light after being shaped by the step mirror is collimated by the collimator of the slow axis collimating mirror 312 and the focus lens 313 is coupled into the optical fiber, and then used for laser display. .
  • beam shaping and fiber coupling are performed for a single-tube semiconductor laser (such as a semiconductor laser area array) of a non-strip array.
  • an array shape is designed by adding one or several layers of the same strip laser to the upper surface of the strip-shaped semiconductor laser, and then the step mirror 30 is doubled in the direction parallel to the light-emitting plane.
  • each strip-shaped semiconductor laser is rearranged in the slow axis direction by reflection, and the gap between the semiconductor lasers is removed.
  • the beam shaping device provided by the embodiment of the present invention can realize beam shaping of a single-tube semiconductor laser strip array, obtain a symmetrical spot in the fast axis and slow axis directions, and realize two columns of semiconductor laser strips through one step mirror 30.
  • the fiber-coupled output of the array is used to remove the gap between each single-tube semiconductor laser.
  • the device is compact in structure, simple in operation, and high in coupling efficiency.
  • the fast and slow axis collimation and beam shaping of the linear array single-tube semiconductor laser are performed by using the device provided by the embodiment of the present invention, and the fast axis and the slow axis collimation are respectively completed by the fast and slow axis collimating lens, and the fast axis and the slow axis collimate.
  • the lenses can all be made using a cylindrical lens.
  • the positional relationship is that 311 pieces of the fast axis collimating mirror and 312 pieces of the slow axis collimating mirror are sequentially placed near the light emitting surface of the semiconductor laser, and the distance between the fast axis collimating mirror 311 and the slow axis collimating mirror 312 is very close.
  • the illuminating surface is also close, and then the gap between the single-tube semiconductor lasers is removed by reflection of a step mirror 30, and then coupled into the fiber through a focus coupling device.
  • the device provided by the embodiment of the present invention uses a new fast and slow axis collimation method to collimate the fast axis direction with a fast axis collimating mirror 311 at a position close to the output surface of the semiconductor laser, and then passes a step.
  • the mirror 30 removes the gap between the single-tube semiconductor lasers, obtains a symmetrical beam in the direction of the fast and slow axis through reflection, and then performs slow axis collimation on the reflected beam, and adds a slow axis with a larger aperture at the position where the step mirror 30 emits light.
  • the collimating mirror 312 realizes the slow axis collimation of the overall beam of the strip-shaped semiconductor laser array, the lens is easy to fabricate, easy to focus, and the cost is lower than that of the miniature slow-axis collimating mirror 312.
  • Embodiment 2 The embodiment of the present invention further provides a fiber coupling device for a semiconductor laser array, and the fiber coupling device of the semiconductor laser array includes the beam shaping device provided by the embodiment of the present invention. And a laser display light source module, comprising the fiber coupling device or the beam shaping device provided by the embodiment of the invention.
  • Embodiment 3 An embodiment of the present invention further provides a laser display device, which may be a laser projector or a laser television.
  • the beam shaping device provided by the embodiment of the invention can also be used as a solution for a high-power single-tube fiber coupling module.
  • Figure 7 is a schematic illustration of a laser display device in accordance with an embodiment of the present invention. As shown in FIG.
  • the light beam emitted from the single-tube semiconductor laser array C is directly supplied to the optical machine 5 for projection onto the screen 6 after passing through the beam shaping device 3 provided by the embodiment of the present invention.
  • the beam shaping scheme of the step mirror the light emitted by each single-tube semiconductor laser is a very asymmetrical elliptical spot, and the spot size in the 'I-axis direction is 4 ⁇ , and the size in the fast-axis direction is 4 ⁇ .
  • the step mirror 30 is composed of two parts, and the angle of the angle of 45° with the light emitting surface of the semiconductor laser is the reflecting portion of the step mirror 30, the supporting portion of the parallel portion, the reflecting portion is generally coated for reflection, and the supporting portion is only for connection and support. The role.
  • the invention is applied to the method of double-plating high-reflection film on the reflective portion, and the beam shaping process of the two-row single-tube semiconductor laser can be realized by one step mirror 30, which saves space and cost, facilitates miniaturization of the device, and makes the optical path adjustment. simpler.
  • the single-tube semiconductor laser line array can be further stacked in a direction perpendicular to the paper surface, and then the 4 bar step mirror 30 is raised, so that the array semiconductor can be realized. Beam shaping of the laser.
  • the embodiment of the present invention further provides a beam shaping method for a semiconductor laser array.
  • the beam shaping method of the semiconductor laser array includes: respectively sending, by a plurality of fast axis collimating mirrors 311, a single tube light emitting area in a single tube semiconductor laser array.
  • the light is collimated by the fast axis; the light collimated by the fast axis is reflected by the mirror to obtain a reflected beam; and the slow beam is collimated by a slow axis collimating mirror 312.
  • the beam shaping method of the above semiconductor laser array since the light beam is slowly aligned after passing through the step mirror, it is not necessary to add a slow axis collimating lens to each single-tube semiconductor laser, thereby solving the beam shaping.
  • the device focuses on more complicated problems, which in turn reduces costs and makes focusing easier.
  • Embodiment 4 The embodiment of the present invention further provides a beam shaping method for a semiconductor laser array.
  • the beam shaping method of the semiconductor laser array includes: reflecting light from the first single-tube semiconductor laser array through a first reflective surface of the step mirror; And reflecting light from the second single-tube semiconductor laser array through the second reflective surface of the step mirror; wherein the step mirror comprises: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions, respectively And connecting each of the plurality of reflecting portions, wherein a reflective film is disposed on both sides of the plurality of reflecting portions to form the first reflecting surface and the second reflecting surface.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention se rapporte à un procédé et à un dispositif permettant une mise en forme de faisceau ainsi qu'à un module de source de lumière et à un dispositif permettant un affichage laser. Le dispositif de mise en forme de faisceau comprend un miroir à réflectivité variable (30), un premier réseau laser à semi-conducteurs à un seul tube (A) et un second réseau laser à semi-conducteurs à un seul tube (B), le miroir à réflectivité variable (30) comprenant : une pluralité de parties réfléchissantes (301) destinées à réfléchir la lumière reçue, ainsi qu'une pluralité de parties de support (302) destinées à raccorder chaque partie réfléchissante (301) desdites parties réfléchissantes (301). Des films réfléchissants sont disposés sur les deux faces desdites parties réfléchissantes (301) afin de former la première et la seconde surface réfléchissante. La surface luminescente du premier réseau laser à semi-conducteurs à un seul tube (A) correspond à la première surface réfléchissante du miroir à réflectivité variable (30) tandis que la surface luminescente du second réseau laser à semi-conducteurs à un seul tube (B) correspond à la seconde surface réfléchissante du miroir à réflectivité variable (30). Le procédé et le dispositif selon la présente invention peuvent utiliser l'espace de manière efficace pour permettre une mise en forme de faisceau, et permettent de simplifier la structure.
PCT/CN2011/072298 2011-03-30 2011-03-30 Procédé et dispositif permettant une mise en forme de faisceau, module de source de lumière et dispositif permettant un affichage laser WO2012129790A1 (fr)

Priority Applications (1)

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PCT/CN2011/072298 WO2012129790A1 (fr) 2011-03-30 2011-03-30 Procédé et dispositif permettant une mise en forme de faisceau, module de source de lumière et dispositif permettant un affichage laser

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PCT/CN2011/072298 WO2012129790A1 (fr) 2011-03-30 2011-03-30 Procédé et dispositif permettant une mise en forme de faisceau, module de source de lumière et dispositif permettant un affichage laser

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6240116B1 (en) * 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
WO2002050599A1 (fr) * 2000-12-18 2002-06-27 Rayteq Photonic Solutions Ltd. Dispositif optique servant a unifier des faisceaux lumineux emis par plusieurs sources de lumiere
CN1933266A (zh) * 2006-09-29 2007-03-21 清华大学 一种激光阵列器件
CN101144909A (zh) * 2007-10-25 2008-03-19 中国科学院长春光学精密机械与物理研究所 一种面阵半导体激光器的光束整形装置
CN201203679Y (zh) * 2007-12-27 2009-03-04 王仲明 一种多路半导体激光耦合入单根光纤的结构
US20100302514A1 (en) * 2009-05-28 2010-12-02 Silverstein Barry D Beam alignment system using arrayed light sources

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6240116B1 (en) * 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
WO2002050599A1 (fr) * 2000-12-18 2002-06-27 Rayteq Photonic Solutions Ltd. Dispositif optique servant a unifier des faisceaux lumineux emis par plusieurs sources de lumiere
CN1933266A (zh) * 2006-09-29 2007-03-21 清华大学 一种激光阵列器件
CN101144909A (zh) * 2007-10-25 2008-03-19 中国科学院长春光学精密机械与物理研究所 一种面阵半导体激光器的光束整形装置
CN201203679Y (zh) * 2007-12-27 2009-03-04 王仲明 一种多路半导体激光耦合入单根光纤的结构
US20100302514A1 (en) * 2009-05-28 2010-12-02 Silverstein Barry D Beam alignment system using arrayed light sources

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