WO2012124539A1 - Electronic component, and method for producing same - Google Patents
Electronic component, and method for producing same Download PDFInfo
- Publication number
- WO2012124539A1 WO2012124539A1 PCT/JP2012/055654 JP2012055654W WO2012124539A1 WO 2012124539 A1 WO2012124539 A1 WO 2012124539A1 JP 2012055654 W JP2012055654 W JP 2012055654W WO 2012124539 A1 WO2012124539 A1 WO 2012124539A1
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- WIPO (PCT)
- Prior art keywords
- conductive connection
- mounting component
- flip chip
- chip type
- wiring board
- Prior art date
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Images
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13012—Shape in top view
- H01L2224/13013—Shape in top view being rectangular or square
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01029—Copper [Cu]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Definitions
- the present invention relates to an electronic component and a manufacturing method thereof, and more particularly to an electronic component having a structure in which a flip chip type mounting component is mounted on a wiring board and sealed with a sealing resin, and a manufacturing method thereof.
- Patent Document 1 describes an electronic component having a structure in which a surface acoustic wave element is flip-chip mounted and sealed with a sealing resin.
- Patent Document 1 a functional surface side of a surface acoustic wave element (bare chip) that is a flip chip type mounting component (for example, a surface on which comb-shaped electrodes are disposed) is opposed to a wiring board, and solder balls or Au
- a resin sealing structure in which a conductive connecting material such as a bump is mounted on a wiring board and then sealed with a sealing resin from above is described, and an electronic component having such a resin sealing structure is described.
- the present invention solves the above-described problems, and has a small and highly reliable electronic component that suppresses the penetration of the sealing resin into the resin-sealed internal space where the functional portion exists, and the electronic
- An object of the present invention is to provide an electronic component manufacturing method capable of efficiently manufacturing components.
- the electronic component of the present invention is Flip chip type mounting parts having functional surfaces with functional elements; A wiring board on which the flip chip type mounting component is mounted; A plurality of conductive connection portions for electrically connecting the flip chip type mounting component and the wiring board; An electronic component in which a gap between the wiring substrate and the flip chip type mounting component is sealed with a sealing resin at a peripheral portion of the flip chip type mounting component,
- the conductive connection portion has a columnar shape and includes two connection surfaces connected to the flip chip type mounting component and the wiring board.
- the plurality of conductive connection portions are disposed at a predetermined interval G along a peripheral edge portion of the functional surface of the flip chip type mounting component, and A gap G between the conductive connecting portions adjacent to each other is smaller than a dimension L of the conductive connecting portion in a direction along a peripheral edge portion of the functional surface of the flip chip type mounting component.
- the conductive connection portion has a dimension L in a direction along a peripheral portion of the functional surface of the flip chip type mounting component, a dimension H between the two connection surfaces, and the functional surface. It is preferable that it is larger than the dimension W of the direction which goes to the inner side of the said functional surface from the peripheral part.
- interval G of the said adjacent conductive connection part is smaller than the dimension H between the said 2 connection surfaces.
- the conductive connection portion does not melt at 220 ° C. or lower.
- the conductive connection portion can be melted even when it is subjected to reflowing thereafter. Therefore, it is possible to provide a highly practical electronic component.
- the said conductive connection part contains an alloy.
- the alloy preferably includes at least one selected from the group consisting of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg.
- the alloy preferably includes at least one selected from the group consisting of SnCuNi, SnCuMn, SnCuAl, SnCuCr, and SnCuGe.
- the sealing resin is preferably formed using a resin sheet.
- a resin sheet in a B stage state cured to an intermediate stage is used as the resin sheet, and this is placed so as to cover the flip chip type mounting component, and heated to efficiently perform resin sealing. It becomes possible.
- the method for manufacturing an electronic component of the present invention includes: Preparing a flip chip type mounting component having a functional surface with functional elements; Preparing a wiring board on which the flip-chip mounting component is mounted; A plurality of conductive connection portions are spaced along a peripheral edge portion of the functional surface of the flip chip type mounting component with a gap G smaller than a dimension L of the conductive connection portion in a direction along the peripheral edge portion of the functional surface. And placing the Reflow heating to electrically connect the electrode included in the wiring board and the electrode included in the flip-chip mounting component via the conductive connection portion; Sealing a gap between the wiring board and the flip chip type mounting component at a peripheral edge of the flip chip type mounting component with a sealing resin.
- the conductive resin can suppress and prevent the ingress of the sealing resin into the internal space sealed with the resin, and it has high characteristics and reliability without increasing the size of the product. Highly efficient electronic components can be manufactured efficiently.
- a metal having a melting point lower than that of a metal material constituting an electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board It is preferable to use a metal material having a melting point higher than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board.
- a material containing SnAg is used as a metal material having a melting point lower than that of the metal material constituting the electrode to which the conductive connection portion is connected, which constitutes the conductive connection portion
- the flip chip type mounting component includes At least one selected from the group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe as a metal material having a melting point higher than that of the metal material that constitutes the electrode or the electrode included in the wiring board and that constitutes the conductive connection portion It is preferable to use a material containing seeds. By providing this configuration, it is possible to increase the diffusion rate between the metal constituting the electrode and the metal constituting the conductive connection portion, and it is possible to form an alloy having a sufficiently high melting point, which is preferable.
- a metal material having a melting point higher than that of the material constituting the electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board is used for the conductive connection portion, and the flip It is preferable to use a metal material having a melting point lower than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the chip-type mounting component or the electrode provided in the wiring board.
- a metal material having a melting point higher than that of the metal material constituting the conductive connection part and constituting the electrode to which the conductive connection part is connected a group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe.
- a metal material having a melting point lower than that of the metal material constituting the conductive connection portion which comprises an electrode provided in the flip chip type mounting component or an electrode provided in the wiring board, using a material containing at least one selected from It is preferable to use a material containing SnAg.
- the electronic component of the present invention suppresses and prevents the sealing resin from entering the internal space sealed with the resin by the conductive connection part that performs the functional connection between the flip chip type mounting component and the wiring board. Therefore, it is possible to efficiently manufacture highly reliable electronic components without increasing the size of the product.
- FIG. 4 is a perspective view showing a state in which the flip chip type mounting component of FIG. 3 is placed on a wiring board with its functional surface facing downward.
- FIG. 1 is a front sectional view showing a configuration of an electronic component according to an embodiment of the present invention
- FIG. 2 is a perspective view thereof
- FIG. 3 is a flip chip having a functional surface including a functional element constituting the electronic component of the present invention
- FIG. 4 is a diagram showing a state in which a plurality of conductive connection portions are arranged at predetermined intervals along the peripheral edge of the functional surface of the mold mounting component.
- FIG. 4 shows the flip chip mounting component with its functional surface facing downward. It is a perspective view which shows the state mounted on the wiring board.
- the electronic component of the first embodiment is a flip-chip type mounting component having a functional surface 3 provided with a functional element 2 and flip-chip mounted on the wiring substrate 1. 4 and a plurality of conductive connection portions 5 for electrically connecting the flip chip type mounting component 4 and the wiring board 1.
- a gap 10 between the wiring substrate 1 and the flip chip type mounting component 4 at the peripheral edge of the flip chip type mounting component 4 is sealed with a sealing resin 6 disposed so as to cover the flip chip type mounting component 4.
- the functional element 2 of the flip chip type mounting part 4 is a space formed between the facing surfaces of the wiring board 1 and the flip chip type mounting part 4, that is, the upper surface of the wiring board 1. , Is located in a space (internal space) 20 surrounded by the functional surface 3, the conductive connection portion 5, and the sealing resin 6, and is configured so that the sealing resin 6 does not enter the space 20. .
- the plurality of conductive connection portions 5 are arranged along the peripheral edge portion of the functional surface 3 of the flip chip type mounting component 4 at a predetermined interval.
- the conductive connection portion 5 includes two connection surfaces 5 a and 5 b (FIG. 1) connected to the wiring substrate 1 and the flip chip type mounting component 4.
- the connection surfaces 5 a and 5 b are connected to the wiring substrate 1.
- an electrode included in the flip chip type mounting component 4.
- the dimension (gap of the adjacent conductive connection part 5) G of the clearance gap 10 of the mutually adjacent conductive connection part 5 is set to the peripheral part of the functional surface 3 of the flip chip type mounting component 4 of the conductive connection part 5. It is comprised so that it may become smaller than the dimension L (FIG. 3) of the direction which follows (the direction which follows the line which connects the mutually adjacent conductive connection parts 5).
- the dimension L in the direction along the peripheral edge portion of the functional surface 3 of the flip chip type mounting component 4 is the dimension H between the two connection surfaces 5a and 5b. And dimensions parallel to the two connection surfaces 5a and 5b and in a direction from the peripheral edge of the functional surface 3 to the inner side of the functional surface 3 (that is, orthogonal to a line connecting the conductive connection portions 5 adjacent to each other) It is configured to be larger than the dimension (W).
- the dimension (gap between adjacent conductive connection parts 5) G between the adjacent conductive connection parts 5 is smaller than the dimension H between the two connection surfaces 5a and 5b of the conductive connection part 5. It is configured as follows.
- the conductive connection portion 5 is formed of, for example, a material mainly composed of a SnCuNi alloy. By using a material mainly composed of this SnCuNi alloy, it is possible to form the conductive connection portion 5 having a melting point higher than the melting point 217 ° C. of a commonly used SnAgCu solder and having a melting point of 220 ° C. or more.
- the conductive material 5 that does not melt at 220 ° C. or lower includes, in addition to the above-described material containing the SnCuNi alloy as a main component, any one alloy of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg as a main component. It can be formed from a material that contains and does not melt at 220 ° C. or lower, or a material that contains any one alloy of SnCuMn, SnCuAl, SnCuCr, SnCuGe as a main component.
- the size of the gap 10 between the adjacent conductive connection portions 5 is the peripheral edge of the functional surface 3 of the flip chip type mounting component 4. Since it is configured to be smaller than the dimension L in the direction along the portion, the conductive connection portion 5 that performs the function of performing the functional connection between the wiring board 1 and the flip chip type mounting component 4 has an internal space. 20 (FIGS. 1 and 2) can be controlled and prevented from entering the sealing resin 6, and a member for preventing the sealing resin 6 from entering is unnecessary. Become. As a result, a highly reliable electronic component can be obtained without increasing the size of the product.
- the dimension L in the direction along the peripheral edge of the functional surface 3 of the flip-chip mounting component 4 (the direction along the line connecting the adjacent conductive connection parts 5) is larger than the above-described dimension H and dimension W. Since it is configured to be large, it is possible to more reliably suppress and prevent the sealing resin 6 from entering the internal space 20.
- the size of the gap 10 between the adjacent conductive connection portions 5 (the interval between the adjacent conductive connection portions 5) G is made smaller than the size H between the two connection surfaces 5a and 5b of the conductive connection portion 5. Therefore, the conductive connecting portion 5 can more reliably suppress and prevent the sealing resin 6 from entering the internal space 20 sealed by the sealing resin 6.
- the conductive connection portion 5 is configured not to melt at 220 ° C. or lower, it is possible to prevent melting in subsequent reflow.
- the wiring board 1 on which the flip chip type mounting component 4 is mounted is prepared.
- the wiring substrate 1 an alumina substrate, a glass ceramic substrate obtained by adding borosilicate glass or silicon oxide to alumina, a wiring substrate made of an oxide such as Ba—Ti, Sr—Ti, Ba—Al—Si, LiTaO 3
- a known wiring board such as a piezoelectric wiring board made of LiNbO 3 or the like, a resin wiring board such as a printed wiring board or the like.
- a glass ceramic substrate in which borosilicate glass or silicon oxide was added to alumina was used.
- a flip chip type mounting component 4 to be mounted on the wiring board 1 is prepared.
- a surface acoustic wave device (SAW chip) was used as the flip chip type mounting component 4.
- the flip-chip mounting component is not limited to the SAW chip, but may be a MEMS chip.
- flip chip mounting components are not necessarily limited to bare chips that require hollow sealing.
- the sealing resin is a bare chip such as an IC or PA switch used for a mobile phone, wireless LAN, Bluetooth (registered trademark), etc. Also good. Furthermore, the present invention can be applied to package parts and array type chip parts.
- a conductive connection part 5 for connecting the wiring substrate 1 and the flip chip type mounting component 4 is prepared.
- a material which comprises the conductive connection part 5 considering the relationship with the material which comprises the electrode formed in the wiring board 1 and the flip chip type mounting component 4, etc., the above various materials are used. It is possible to use.
- Flip chip type mounting component 4 is mounted on wiring board 1, and flip chip type mounting component 4 is connected to wiring board 1 via conductive connection portion 5. And a structure electrically connected to each other is formed (see FIG. 4).
- a plurality of rectangular parallelepiped conductive connection portions 5 are flipped on the functional surface 3 of the flip chip type mounting component 4.
- a dimension L in a direction along the line connecting the conductive connecting portions 5 adjacent to each other at the peripheral portion of the functional surface 3 of the chip-type mounting component 4 (direction along the peripheral portion of the functional surface 3 of the flip-chip mounting component 4).
- the electrode of the wiring board 1 and the electrode of the flip chip type mounting component 4 are electrically connected by the conductive connecting portion 5 with a smaller gap G.
- the conductive connection portion 5 material constituting the conductive connection portion 5
- a known material such as Au can be used.
- an alloy composition such as SnAgCu can be used as the conductive connection portion 5 (material constituting the conductive connection portion 5).
- the sealing resin is broken or the molten alloy component is surrounded by the influence of the melting of the alloy (conductive connection part). In some cases, the problem spreads. In particular, when the sealing resin is thin, breakage is likely to occur. Therefore, it is desirable to use an alloy having a composition with a high melting point after melting, such as SnCu, AuSn, BiAg, SnSb, PbSn, SnAg.
- any one of SnCuNi, SnCuMn, SnCuAl, SnCuCr, SnCuGe An alloy layer containing can be used. In that case, the above problem can be solved.
- the CuNi alloy is previously disposed on the wiring substrate 1 which is an electrode to which the conductive connection portion 5 is connected by plating or the like.
- Conductive material made of a low-temperature melting alloy such as SnAgCu or SnBi so as to be provided on at least one of the mounting electrode and the mounting electrode disposed on the flip chip type mounting component and to be in contact with the CuNi alloy
- the flip chip type mounting component 4 is placed on the wiring board 1 and reflow-heated so that the material is arranged, thereby generating a high melting point SnCuNi alloy, thereby making the conductive connection portion 5 a high melting point. It is also possible to
- a CuNi alloy column is disposed between the electrode on the wiring board 1 side and the electrode on the flip chip type mounting component 4 side via a low-temperature molten alloy such as SnAgCu or SnBi, and the flip chip is removed from the wiring board 1 side electrode.
- Reflow heating after setting the wiring board side electrode, the low temperature molten alloy, the CuNi alloy pillar, the low temperature molten alloy, and the flip chip type mounting component side electrode in this order toward the electrode on the mold mounting component 4 side By doing so, it is also possible to adopt a configuration in which the wiring board side electrode and the flip chip type mounting component side electrode are connected by the high melting point conductive connection portion.
- thermosetting resin such as a known epoxy resin is suitable, but a thermoplastic resin that is softened and bonded at a low temperature can also be used.
- a sealing method with a sealing resin As a sealing method with a sealing resin (layer), a method in which a liquid resin having a high viscosity is applied to a side surface portion of a flip chip type mounting component, or a resin (resin sheet) molded into a sheet shape is softened by heating.
- the viscosity of the resin softened by heating is preferably 1 Pa ⁇ s to 75 Pa ⁇ s.
- the viscosity is 1 Pa ⁇ s or more, the sealing resin can be reliably prevented from entering the internal space.
- the viscosity is 75 Pa ⁇ s or less, the processability of the sealing resin is good and the resin is easily Sealing can be performed.
- Example 1 after connecting the wiring board 1 and the flip chip type mounting component 4 via the conductive connection portion 5, the resin sheet is arranged on the upper surface of the flip chip type mounting component 4, and the whole is vacuum-sucked. Then, the resin sheet was sealed by heating to a temperature at which the resin sheet was softened, and the peripheral part of the softened resin sheet was suspended and returned to atmospheric pressure after contacting the wiring board.
- the flip chip type mounting component 4 is mounted on the wiring board 1 via the conductive connection portion 5 and is electrically connected, and the whole is sealed with the sealing resin 6.
- a highly reliable electronic component in which the sealing resin 6 does not enter the resin-sealed internal space 20 that is stopped and has a functional portion can be obtained.
- an electronic component having a structure as shown in FIG. (1) Plane dimension of flip chip type mounting component 4: 2 mm ⁇ (square with a side of 2 mm), (2) The distance between the opposing surfaces of the wiring board 1 and the flip chip type mounting component 4 (that is, the dimension between the upper surface of the wiring board 1 and the functional surface (lower surface) 3 of the flip chip type mounting component 4) (FIG. 3). Dimension H): 100 ⁇ m, (3) Depth dimension (dimension W in FIG.
- the penetration rate of the sealing resin 6 is the peripheral edge of the functional surface 3 of the flip chip type mounting component 4 when the depth dimension of the conductive connection portion 5 (the dimension of W in FIG. 3) is 100.
- the ratio of the penetration length of the sealing resin from the portion to the depth direction ((intrusion length / W dimension) ⁇ 100) (%) is shown.
- the pass / fail judgment is made in a range that does not adversely affect the functional element (surface acoustic wave element in this embodiment 1) 2 provided on the functional surface 3 of the flip chip type mounting component 4, that is, the above ratio is 100%. Those within the range were judged as ⁇ (good), those far below 100% were judged as ⁇ (excellent), and those with the above ratio exceeding 100% were judged as x (impossible).
- the dimension of the gap 10 between the adjacent conductive connection parts 5 is along the peripheral part of the functional surface 3 of the conductive connection part 5.
- samples of sample numbers 1 to 3 and 6 that is equal to or larger than the dimension L in the direction (the direction along the line connecting the adjacent conductive connecting portions 5) It was confirmed that the penetration rate of the sealing resin 6 exceeded 100%.
- samples satisfying the requirements of the present invention with the dimension G smaller than the dimension L are confirmed that the penetration rate of the sealing resin 6 is greatly reduced. It was done.
- samples Nos. 7 to 15 are samples in which the dimension L of the conductive connection part 5 is larger than the depth dimension of the conductive connection part 5 (the dimension of W in FIG. 3) (fixed at 100 ⁇ m).
- the penetration rate of the sealing resin 6 is lower when the dimension G is the same when focusing on the dimension G (comparison between the sample number 4 and the sample numbers 9 and 14). And comparison of sample number 5 and sample numbers 10 and 15).
- the sealing resin 6 covers a part of the upper surface of the wiring substrate 1, the side surfaces and the upper surface of the flip chip type mounting component 4, and the overall shape becomes a substantially rectangular parallelepiped shape.
- the gap between the wiring board and the flip chip mounting component can be reliably sealed at the peripheral portion of the functional surface of the flip chip mounting component.
- the sealing resin 6 can be arranged in various ways.
- a shield layer made of a conductive material such as a conductive resin can be disposed so as to cover the sealing resin (layer). It is possible to reduce intrusion of electromagnetic waves and leakage of electromagnetic waves to the outside.
- the sealing resin 6 enters the internal space 20 (FIGS. 1 and 2) into the conductive connection portion 5 that performs the function of performing the functional connection between the wiring board 1 and the flip chip type mounting component 4. It is also possible to fulfill the function of suppressing and preventing this.
- the conductive connection portion 5 is not limited to an alloy composition, and instead, a pure metal made of Au or Cu may be used, or a conductive resin or a metal nano paste printed or the like may be used. . In the present invention, there are no particular restrictions on the specific shape of the conductive connection portion, and various shapes such as a columnar shape and a prismatic shape can be used.
- the present invention is not limited to the above embodiment in other points as well, and the specific configuration of the wiring board, the type of the constituent material of the wiring board main body, and the specific type and configuration of the flip chip type mounting component Various applications and modifications can be made within the scope of the invention with respect to the constituent material and arrangement of the conductive connection portion.
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Abstract
Provided are: a small and reliable electronic component in which a sealing resin does not enter an internal space housing a functional part and sealed by means of the resin; and an electronic component production method capable of efficiently producing the aforementioned electronic component. An electronic component which is provided with a plurality of conductive connectors (5) for electrically connecting a flip-chip mounting component (4) and a wiring board (1) and in which the gap (10) between the wiring board and the flip-chip mounting component is sealed by means of a sealing resin (6) in the periphery of the flip-chip mounting component, wherein the conductive connectors are provided with two columnar connection surfaces connected to the flip-chip mounting component and the wiring board, the conductive connectors are disposed at a predetermined interval along the periphery of the functional surface of the flip-chip mounting component, and the gap (G) between the adjacent conductive connectors is smaller than the measurement (L) of the conductive conductors in the direction along the periphery of the functional surface of the flip-chip mounting component.
Description
本発明は電子部品およびその製造方法に関し、詳しくは、フリップチップ型実装部品を配線基板に実装し、封止樹脂により封止した構造を有する電子部品およびその製造方法に関するものである。
The present invention relates to an electronic component and a manufacturing method thereof, and more particularly to an electronic component having a structure in which a flip chip type mounting component is mounted on a wiring board and sealed with a sealing resin, and a manufacturing method thereof.
フリップチップ型実装部品を配線基板上に実装するとともに、封止樹脂により封止した構造を有する電子部品が広く用いられるに至っている。
そして、そのような電子部品として、特許文献１には、弾性表面波素子をフリップチップ実装し、封止樹脂により封止した構造を有する電子部品が記載されている。 Electronic components having a structure in which a flip chip type mounting component is mounted on a wiring board and sealed with a sealing resin have been widely used.
As such an electronic component,Patent Document 1 describes an electronic component having a structure in which a surface acoustic wave element is flip-chip mounted and sealed with a sealing resin.
そして、そのような電子部品として、特許文献１には、弾性表面波素子をフリップチップ実装し、封止樹脂により封止した構造を有する電子部品が記載されている。 Electronic components having a structure in which a flip chip type mounting component is mounted on a wiring board and sealed with a sealing resin have been widely used.
As such an electronic component,
すなわち、特許文献１には、フリップチップ型実装部品である弾性表面波素子（ベアチップ）の機能面側（例えば櫛形電極が配設された面）を、配線基板と対向させて、はんだボールやＡｕバンプなどの導電性接続材により、配線基板上に実装した後、上部から封止樹脂により封止するようにした樹脂封止構造およびそのような樹脂封止構造を有する電子部品が記載されている。
That is, in Patent Document 1, a functional surface side of a surface acoustic wave element (bare chip) that is a flip chip type mounting component (for example, a surface on which comb-shaped electrodes are disposed) is opposed to a wiring board, and solder balls or Au A resin sealing structure in which a conductive connecting material such as a bump is mounted on a wiring board and then sealed with a sealing resin from above is described, and an electronic component having such a resin sealing structure is described. .
特許文献１の電子部品のように、配線基板に弾性表面波素子を実装し、これを封止樹脂により封止した構造を有する電子部品の場合、封止樹脂により弾性表面波素子の機能面（櫛形電極が配設された面）が封止されるため、耐候性を向上させることが可能になる。
In the case of an electronic component having a structure in which a surface acoustic wave element is mounted on a wiring board and sealed with a sealing resin, as in the electronic component of Patent Document 1, the functional surface of the surface acoustic wave element with a sealing resin ( Since the surface on which the comb-shaped electrode is disposed is sealed, weather resistance can be improved.
しかしながら、特許文献１の電子部品の場合、上述のはんだボール間やＡｕバンプ間から、樹脂封止された内部空間に封止用の樹脂が浸入するという問題点がある。
However, in the case of the electronic component of Patent Document 1, there is a problem that the sealing resin enters the internal space where the resin is sealed from between the solder balls or between the Au bumps.
そのため、浸入した樹脂が機能面の素子に付着しないように、機能面の櫛形電極などの素子（機能部）が配設される領域の周囲にマージン部を確保することが必要になり、弾性表面波素子全体の大きさに対して、素子（櫛形電極）が実際に配設される領域が小さくなり、製品である電子部品の大きさとの関係において、得られる特性が低くなるという問題点がある。
Therefore, it is necessary to secure a margin around the area where elements (functional parts) such as comb-shaped electrodes on the functional surface are arranged so that the infiltrated resin does not adhere to the functional surface elements. The area where the element (comb-shaped electrode) is actually disposed is smaller than the overall size of the wave element, and there is a problem that the obtained characteristics are lowered in relation to the size of the electronic component as a product. .
本発明は、上記課題を解決するものであり、機能部が存在する、樹脂封止された内部空間への封止樹脂の浸入を抑えた、小型で信頼性の高い電子部品、および、該電子部品を効率よく製造することが可能な電子部品の製造方法を提供することを目的とする。
The present invention solves the above-described problems, and has a small and highly reliable electronic component that suppresses the penetration of the sealing resin into the resin-sealed internal space where the functional portion exists, and the electronic An object of the present invention is to provide an electronic component manufacturing method capable of efficiently manufacturing components.
上記課題を解決するために、本発明の電子部品は、
機能素子を備えた機能面を有するフリップチップ型実装部品と、
前記フリップチップ型実装部品が実装される配線基板と、
前記フリップチップ型実装部品と前記配線基板を電気的に接続する複数の導電性接続部と
を備え、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間が封止樹脂により封止された電子部品であって、
前記導電性接続部は、柱状で前記フリップチップ型実装部品および前記配線基板に接続される２つの接続面を備えているとともに、
前記複数の導電性接続部が、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、所定の間隔Ｇをおいて配設されており、かつ、
互いに隣り合う前記導電性接続部の間隔Ｇが、前記導電性接続部の、前記フリップチップ型実装部品の前記機能面の周縁部に沿う方向の寸法Ｌよりも小さいこと
を特徴としている。 In order to solve the above problems, the electronic component of the present invention is
Flip chip type mounting parts having functional surfaces with functional elements;
A wiring board on which the flip chip type mounting component is mounted;
A plurality of conductive connection portions for electrically connecting the flip chip type mounting component and the wiring board;
An electronic component in which a gap between the wiring substrate and the flip chip type mounting component is sealed with a sealing resin at a peripheral portion of the flip chip type mounting component,
The conductive connection portion has a columnar shape and includes two connection surfaces connected to the flip chip type mounting component and the wiring board.
The plurality of conductive connection portions are disposed at a predetermined interval G along a peripheral edge portion of the functional surface of the flip chip type mounting component, and
A gap G between the conductive connecting portions adjacent to each other is smaller than a dimension L of the conductive connecting portion in a direction along a peripheral edge portion of the functional surface of the flip chip type mounting component.
機能素子を備えた機能面を有するフリップチップ型実装部品と、
前記フリップチップ型実装部品が実装される配線基板と、
前記フリップチップ型実装部品と前記配線基板を電気的に接続する複数の導電性接続部と
を備え、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間が封止樹脂により封止された電子部品であって、
前記導電性接続部は、柱状で前記フリップチップ型実装部品および前記配線基板に接続される２つの接続面を備えているとともに、
前記複数の導電性接続部が、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、所定の間隔Ｇをおいて配設されており、かつ、
互いに隣り合う前記導電性接続部の間隔Ｇが、前記導電性接続部の、前記フリップチップ型実装部品の前記機能面の周縁部に沿う方向の寸法Ｌよりも小さいこと
を特徴としている。 In order to solve the above problems, the electronic component of the present invention is
Flip chip type mounting parts having functional surfaces with functional elements;
A wiring board on which the flip chip type mounting component is mounted;
A plurality of conductive connection portions for electrically connecting the flip chip type mounting component and the wiring board;
An electronic component in which a gap between the wiring substrate and the flip chip type mounting component is sealed with a sealing resin at a peripheral portion of the flip chip type mounting component,
The conductive connection portion has a columnar shape and includes two connection surfaces connected to the flip chip type mounting component and the wiring board.
The plurality of conductive connection portions are disposed at a predetermined interval G along a peripheral edge portion of the functional surface of the flip chip type mounting component, and
A gap G between the conductive connecting portions adjacent to each other is smaller than a dimension L of the conductive connecting portion in a direction along a peripheral edge portion of the functional surface of the flip chip type mounting component.
また、本発明においては、前記導電性接続部は、前記フリップチップ型実装部品の前記機能面の周縁部に沿う方向の寸法Ｌが、前記２つの接続面間の寸法Ｈ、および、前記機能面の周縁部から前記機能面の内側に向かう方向の寸法Ｗよりも大きいことが好ましい。
この構成を備えることにより、導電性接続部の配設領域を大きくすることなく、樹脂により封止された内部空間に封止樹脂が浸入することを、さらに確実に抑制、防止することが可能になり、本発明をより実効あらしめることができる。 In the present invention, the conductive connection portion has a dimension L in a direction along a peripheral portion of the functional surface of the flip chip type mounting component, a dimension H between the two connection surfaces, and the functional surface. It is preferable that it is larger than the dimension W of the direction which goes to the inner side of the said functional surface from the peripheral part.
By providing this configuration, it is possible to more reliably suppress and prevent the sealing resin from entering the internal space sealed with the resin without increasing the arrangement area of the conductive connection portion. Thus, the present invention can be made more effective.
この構成を備えることにより、導電性接続部の配設領域を大きくすることなく、樹脂により封止された内部空間に封止樹脂が浸入することを、さらに確実に抑制、防止することが可能になり、本発明をより実効あらしめることができる。 In the present invention, the conductive connection portion has a dimension L in a direction along a peripheral portion of the functional surface of the flip chip type mounting component, a dimension H between the two connection surfaces, and the functional surface. It is preferable that it is larger than the dimension W of the direction which goes to the inner side of the said functional surface from the peripheral part.
By providing this configuration, it is possible to more reliably suppress and prevent the sealing resin from entering the internal space sealed with the resin without increasing the arrangement area of the conductive connection portion. Thus, the present invention can be made more effective.
また、互いに隣り合う前記導電性接続部の間隔Ｇが、前記２つの接続面間の寸法Ｈよりも小さいことが好ましい。
この構成を備えることにより、樹脂により封止された内部空間に封止樹脂が浸入することを、導電性接続部によってさらに確実に抑制、防止することが可能になり、本発明をより実効あらしめることができる。 Moreover, it is preferable that the space | interval G of the said adjacent conductive connection part is smaller than the dimension H between the said 2 connection surfaces.
By providing this configuration, it becomes possible to more reliably suppress and prevent the sealing resin from entering the internal space sealed with the resin by the conductive connection portion, and the present invention is more effectively realized. be able to.
この構成を備えることにより、樹脂により封止された内部空間に封止樹脂が浸入することを、導電性接続部によってさらに確実に抑制、防止することが可能になり、本発明をより実効あらしめることができる。 Moreover, it is preferable that the space | interval G of the said adjacent conductive connection part is smaller than the dimension H between the said 2 connection surfaces.
By providing this configuration, it becomes possible to more reliably suppress and prevent the sealing resin from entering the internal space sealed with the resin by the conductive connection portion, and the present invention is more effectively realized. be able to.
さらに、前記導電性接続部は、２２０℃以下では溶融しないものであることが好ましい。
これにより、例えば、一般的に用いられるＳｎＡｇＣｕ系はんだの融点２１７℃よりも融点が高い金属材料を用いて構成することにより、その後に再リフローに供した場合にも、導電性接続部の溶融を防止することが可能になり、実用性の高い電子部品を提供することが可能になる。 Furthermore, it is preferable that the conductive connection portion does not melt at 220 ° C. or lower.
Thereby, for example, by using a metal material having a melting point higher than the melting point 217 ° C. of a commonly used SnAgCu-based solder, the conductive connection portion can be melted even when it is subjected to reflowing thereafter. Therefore, it is possible to provide a highly practical electronic component.
これにより、例えば、一般的に用いられるＳｎＡｇＣｕ系はんだの融点２１７℃よりも融点が高い金属材料を用いて構成することにより、その後に再リフローに供した場合にも、導電性接続部の溶融を防止することが可能になり、実用性の高い電子部品を提供することが可能になる。 Furthermore, it is preferable that the conductive connection portion does not melt at 220 ° C. or lower.
Thereby, for example, by using a metal material having a melting point higher than the melting point 217 ° C. of a commonly used SnAgCu-based solder, the conductive connection portion can be melted even when it is subjected to reflowing thereafter. Therefore, it is possible to provide a highly practical electronic component.
また、前記導電性接続部は合金を含むものであることが好ましい。
この構成を備えることにより、その後の再リフローでの溶融を防止することが可能な、融点の高い導電性接続部を得ることが可能になり有意義である。 Moreover, it is preferable that the said conductive connection part contains an alloy.
By including this configuration, it is possible to obtain a conductive connection portion having a high melting point that can prevent melting in subsequent re-reflow, which is significant.
この構成を備えることにより、その後の再リフローでの溶融を防止することが可能な、融点の高い導電性接続部を得ることが可能になり有意義である。 Moreover, it is preferable that the said conductive connection part contains an alloy.
By including this configuration, it is possible to obtain a conductive connection portion having a high melting point that can prevent melting in subsequent re-reflow, which is significant.
また、前記合金は、ＳｎＣｕ、ＡｕＳｎ、ＢｉＡｇ、ＳｎＳｂ、ＰｂＳｎ、ＳｎＡｇからなる群より選ばれる少なくとも１種を含むものであることが好ましい。
この構成を備えることにより、２２０℃以下では溶融しない導電性接続部を容易に形成することが可能になる。 The alloy preferably includes at least one selected from the group consisting of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg.
By providing this configuration, it is possible to easily form a conductive connection portion that does not melt at 220 ° C. or lower.
この構成を備えることにより、２２０℃以下では溶融しない導電性接続部を容易に形成することが可能になる。 The alloy preferably includes at least one selected from the group consisting of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg.
By providing this configuration, it is possible to easily form a conductive connection portion that does not melt at 220 ° C. or lower.
また、前記合金は、ＳｎＣｕＮｉ、ＳｎＣｕＭｎ、ＳｎＣｕＡｌ、ＳｎＣｕＣｒ、ＳｎＣｕＧｅからなる群より選ばれる少なくとも１種を含むものであることが好ましい。
この構成を備えることにより、２２０℃以下では溶融しない導電性接続部を容易に形成することが可能になる。 The alloy preferably includes at least one selected from the group consisting of SnCuNi, SnCuMn, SnCuAl, SnCuCr, and SnCuGe.
By providing this configuration, it is possible to easily form a conductive connection portion that does not melt at 220 ° C. or lower.
この構成を備えることにより、２２０℃以下では溶融しない導電性接続部を容易に形成することが可能になる。 The alloy preferably includes at least one selected from the group consisting of SnCuNi, SnCuMn, SnCuAl, SnCuCr, and SnCuGe.
By providing this configuration, it is possible to easily form a conductive connection portion that does not melt at 220 ° C. or lower.
また、前記封止樹脂は、樹脂シートを用いて形成したものであることが好ましい。
この構成を備えることにより、フリップチップ型実装部品の周縁部における、配線基板とフリップチップ型実装部品との隙間が封止樹脂により封止された電子部品を効率よく製造することができる。特に樹脂シートとして、中間段階まで硬化させたＢステージ状態の樹脂シートを用い、これをフリップチップ型実装部品を覆うように載置して、加熱することにより、効率よく樹脂封止を行うことが可能になる。 The sealing resin is preferably formed using a resin sheet.
By providing this configuration, it is possible to efficiently manufacture an electronic component in which the gap between the wiring board and the flip chip type mounting component at the peripheral portion of the flip chip type mounting component is sealed with a sealing resin. In particular, a resin sheet in a B stage state cured to an intermediate stage is used as the resin sheet, and this is placed so as to cover the flip chip type mounting component, and heated to efficiently perform resin sealing. It becomes possible.
この構成を備えることにより、フリップチップ型実装部品の周縁部における、配線基板とフリップチップ型実装部品との隙間が封止樹脂により封止された電子部品を効率よく製造することができる。特に樹脂シートとして、中間段階まで硬化させたＢステージ状態の樹脂シートを用い、これをフリップチップ型実装部品を覆うように載置して、加熱することにより、効率よく樹脂封止を行うことが可能になる。 The sealing resin is preferably formed using a resin sheet.
By providing this configuration, it is possible to efficiently manufacture an electronic component in which the gap between the wiring board and the flip chip type mounting component at the peripheral portion of the flip chip type mounting component is sealed with a sealing resin. In particular, a resin sheet in a B stage state cured to an intermediate stage is used as the resin sheet, and this is placed so as to cover the flip chip type mounting component, and heated to efficiently perform resin sealing. It becomes possible.
本発明の電子部品の製造方法は、
機能素子を備えた機能面を有するフリップチップ型実装部品を準備する工程と、
前記フリップチップ型実装部品が実装される配線基板を準備する工程と、
複数の導電性接続部を、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、前記導電性接続部の、前記機能面の周縁部に沿う方向の寸法Ｌよりも小さい間隔Ｇをおいて配置する工程と、
リフロー加熱することにより、前記配線基板が備える電極と前記フリップチップ型実装部品が備える電極とを、前記導電性接続部を介して電気的に接続する工程と、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間を封止樹脂により封止する工程と
を具備することを特徴としている。
上記構成を備えることにより、樹脂により封止された内部空間に封止樹脂が浸入することを、導電性接続部により抑制、防止して、製品の大型化を招くことなく、高特性で、信頼性の高い電子部品を効率よく製造することが可能になる。 The method for manufacturing an electronic component of the present invention includes:
Preparing a flip chip type mounting component having a functional surface with functional elements;
Preparing a wiring board on which the flip-chip mounting component is mounted;
A plurality of conductive connection portions are spaced along a peripheral edge portion of the functional surface of the flip chip type mounting component with a gap G smaller than a dimension L of the conductive connection portion in a direction along the peripheral edge portion of the functional surface. And placing the
Reflow heating to electrically connect the electrode included in the wiring board and the electrode included in the flip-chip mounting component via the conductive connection portion;
Sealing a gap between the wiring board and the flip chip type mounting component at a peripheral edge of the flip chip type mounting component with a sealing resin.
By providing the above configuration, the conductive resin can suppress and prevent the ingress of the sealing resin into the internal space sealed with the resin, and it has high characteristics and reliability without increasing the size of the product. Highly efficient electronic components can be manufactured efficiently.
機能素子を備えた機能面を有するフリップチップ型実装部品を準備する工程と、
前記フリップチップ型実装部品が実装される配線基板を準備する工程と、
複数の導電性接続部を、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、前記導電性接続部の、前記機能面の周縁部に沿う方向の寸法Ｌよりも小さい間隔Ｇをおいて配置する工程と、
リフロー加熱することにより、前記配線基板が備える電極と前記フリップチップ型実装部品が備える電極とを、前記導電性接続部を介して電気的に接続する工程と、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間を封止樹脂により封止する工程と
を具備することを特徴としている。
上記構成を備えることにより、樹脂により封止された内部空間に封止樹脂が浸入することを、導電性接続部により抑制、防止して、製品の大型化を招くことなく、高特性で、信頼性の高い電子部品を効率よく製造することが可能になる。 The method for manufacturing an electronic component of the present invention includes:
Preparing a flip chip type mounting component having a functional surface with functional elements;
Preparing a wiring board on which the flip-chip mounting component is mounted;
A plurality of conductive connection portions are spaced along a peripheral edge portion of the functional surface of the flip chip type mounting component with a gap G smaller than a dimension L of the conductive connection portion in a direction along the peripheral edge portion of the functional surface. And placing the
Reflow heating to electrically connect the electrode included in the wiring board and the electrode included in the flip-chip mounting component via the conductive connection portion;
Sealing a gap between the wiring board and the flip chip type mounting component at a peripheral edge of the flip chip type mounting component with a sealing resin.
By providing the above configuration, the conductive resin can suppress and prevent the ingress of the sealing resin into the internal space sealed with the resin, and it has high characteristics and reliability without increasing the size of the product. Highly efficient electronic components can be manufactured efficiently.
また、本発明においては、前記導電性接続部に、前記フリップチップ型実装部品または前記配線基板の少なくとも一方の、前記導電性接続部が接続される電極を構成する金属材料よりも融点の低い金属材料を用い、前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極の少なくとも一方に、前記導電性接続部を構成する金属材料よりも融点の高い金属材料を用いることが好ましい。
この構成を備えることにより、リフロー加熱して、配線基板が備える電極とフリップチップ型実装部品が備える電極とを、導電性接続部を介して電気的に接続し、前記電極と導電性接続部との接続部（接続後の導電性接続部）を、その後の再リフローで溶融しないような融点を有するものにすることが可能になり、実用性の高い電子部品を提供することができる。 In the present invention, a metal having a melting point lower than that of a metal material constituting an electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board. It is preferable to use a metal material having a melting point higher than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board.
By providing this configuration, reflow heating is performed to electrically connect the electrode included in the wiring board and the electrode included in the flip chip type mounting component via the conductive connection portion, and the electrode and the conductive connection portion. It is possible to make the connecting portion (conductive connecting portion after connection) have a melting point that does not melt by subsequent reflow, and a highly practical electronic component can be provided.
この構成を備えることにより、リフロー加熱して、配線基板が備える電極とフリップチップ型実装部品が備える電極とを、導電性接続部を介して電気的に接続し、前記電極と導電性接続部との接続部（接続後の導電性接続部）を、その後の再リフローで溶融しないような融点を有するものにすることが可能になり、実用性の高い電子部品を提供することができる。 In the present invention, a metal having a melting point lower than that of a metal material constituting an electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board. It is preferable to use a metal material having a melting point higher than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board.
By providing this configuration, reflow heating is performed to electrically connect the electrode included in the wiring board and the electrode included in the flip chip type mounting component via the conductive connection portion, and the electrode and the conductive connection portion. It is possible to make the connecting portion (conductive connecting portion after connection) have a melting point that does not melt by subsequent reflow, and a highly practical electronic component can be provided.
また、前記導電性接続部を構成する、前記導電性接続部が接続される電極を構成する金属材料よりも融点の低い金属材料として、ＳｎＡｇを含む材料を用い、 前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極を構成する、前記導電性接続部を構成する金属材料よりも融点の高い金属材料として、Ｃｕ、ＣｕＮｉ、ＣｕＭｎ、ＣｕＡｌ、ＣｕＣｒ、ＣｕＧｅからなる群より選ばれる少なくとも１種を含む材料を用いることが好ましい。
この構成を備えることにより、電極を構成する金属と導電性接続部を構成する金属間の拡散速度を高めて、十分に高融点化された合金を形成することが可能になり、好ましい。 Further, a material containing SnAg is used as a metal material having a melting point lower than that of the metal material constituting the electrode to which the conductive connection portion is connected, which constitutes the conductive connection portion, and the flip chip type mounting component includes At least one selected from the group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe as a metal material having a melting point higher than that of the metal material that constitutes the electrode or the electrode included in the wiring board and that constitutes the conductive connection portion It is preferable to use a material containing seeds.
By providing this configuration, it is possible to increase the diffusion rate between the metal constituting the electrode and the metal constituting the conductive connection portion, and it is possible to form an alloy having a sufficiently high melting point, which is preferable.
この構成を備えることにより、電極を構成する金属と導電性接続部を構成する金属間の拡散速度を高めて、十分に高融点化された合金を形成することが可能になり、好ましい。 Further, a material containing SnAg is used as a metal material having a melting point lower than that of the metal material constituting the electrode to which the conductive connection portion is connected, which constitutes the conductive connection portion, and the flip chip type mounting component includes At least one selected from the group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe as a metal material having a melting point higher than that of the metal material that constitutes the electrode or the electrode included in the wiring board and that constitutes the conductive connection portion It is preferable to use a material containing seeds.
By providing this configuration, it is possible to increase the diffusion rate between the metal constituting the electrode and the metal constituting the conductive connection portion, and it is possible to form an alloy having a sufficiently high melting point, which is preferable.
また、前記導電性接続部に、前記フリップチップ型実装部品または前記配線基板の少なくとも一方の、前記導電性接続部が接続される電極を構成する材料よりも融点の高い金属材料を用い、前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極の少なくとも一方に、前記導電性接続部を構成する金属材料よりも融点の低い金属材料を用いることが好ましい。
この構成を備えることにより、リフロー加熱して、配線基板が備える電極とフリップチップ型実装部品が備える電極とを、導電性接続部を介して電気的に接続し、前記電極と導電性接続部との接続部（接続後の導電性接続部）を、その後の再リフローで溶融しないような融点を有するものにすることが可能になり、実用性の高い電子部品を提供することができる。 In addition, a metal material having a melting point higher than that of the material constituting the electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board is used for the conductive connection portion, and the flip It is preferable to use a metal material having a melting point lower than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the chip-type mounting component or the electrode provided in the wiring board.
By providing this configuration, reflow heating is performed to electrically connect the electrode included in the wiring board and the electrode included in the flip chip type mounting component via the conductive connection portion, and the electrode and the conductive connection portion. It is possible to make the connecting portion (conductive connecting portion after connection) have a melting point that does not melt by subsequent reflow, and a highly practical electronic component can be provided.
この構成を備えることにより、リフロー加熱して、配線基板が備える電極とフリップチップ型実装部品が備える電極とを、導電性接続部を介して電気的に接続し、前記電極と導電性接続部との接続部（接続後の導電性接続部）を、その後の再リフローで溶融しないような融点を有するものにすることが可能になり、実用性の高い電子部品を提供することができる。 In addition, a metal material having a melting point higher than that of the material constituting the electrode to which the conductive connection portion is connected to at least one of the flip chip type mounting component or the wiring board is used for the conductive connection portion, and the flip It is preferable to use a metal material having a melting point lower than that of the metal material constituting the conductive connection portion for at least one of the electrode provided in the chip-type mounting component or the electrode provided in the wiring board.
By providing this configuration, reflow heating is performed to electrically connect the electrode included in the wiring board and the electrode included in the flip chip type mounting component via the conductive connection portion, and the electrode and the conductive connection portion. It is possible to make the connecting portion (conductive connecting portion after connection) have a melting point that does not melt by subsequent reflow, and a highly practical electronic component can be provided.
また、前記導電性接続部を構成する、前記導電性接続部が接続される電極を構成する金属材料よりも融点の高い金属材料として、Ｃｕ、ＣｕＮｉ、ＣｕＭｎ、ＣｕＡｌ、ＣｕＣｒ、ＣｕＧｅからなる群より選ばれる少なくとも１種を含む材料を用い、前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極を構成する、前記導電性接続部を構成する金属材料よりも融点の低い金属材料として、ＳｎＡｇを含む材料を用いることが好ましい。
この構成を備えることにより、電極を構成する金属と導電性接続部を構成する金属間の拡散速度を高めて、十分に高融点化された合金を形成することが可能になり、好ましい。 Further, as a metal material having a melting point higher than that of the metal material constituting the conductive connection part and constituting the electrode to which the conductive connection part is connected, a group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe. As a metal material having a melting point lower than that of the metal material constituting the conductive connection portion, which comprises an electrode provided in the flip chip type mounting component or an electrode provided in the wiring board, using a material containing at least one selected from It is preferable to use a material containing SnAg.
By providing this configuration, it is possible to increase the diffusion rate between the metal constituting the electrode and the metal constituting the conductive connection portion, and it is possible to form an alloy having a sufficiently high melting point, which is preferable.
この構成を備えることにより、電極を構成する金属と導電性接続部を構成する金属間の拡散速度を高めて、十分に高融点化された合金を形成することが可能になり、好ましい。 Further, as a metal material having a melting point higher than that of the metal material constituting the conductive connection part and constituting the electrode to which the conductive connection part is connected, a group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe. As a metal material having a melting point lower than that of the metal material constituting the conductive connection portion, which comprises an electrode provided in the flip chip type mounting component or an electrode provided in the wiring board, using a material containing at least one selected from It is preferable to use a material containing SnAg.
By providing this configuration, it is possible to increase the diffusion rate between the metal constituting the electrode and the metal constituting the conductive connection portion, and it is possible to form an alloy having a sufficiently high melting point, which is preferable.
本発明の電子部品は、樹脂により封止された内部空間に封止樹脂が浸入することを、フリップチップ型実装部品と配線基板の機能的な接続を行う導電性接続部により抑制、防止して、製品の大型化を招くことなく、信頼性の高い電子部品を効率よく製造することが可能になる。
The electronic component of the present invention suppresses and prevents the sealing resin from entering the internal space sealed with the resin by the conductive connection part that performs the functional connection between the flip chip type mounting component and the wiring board. Therefore, it is possible to efficiently manufacture highly reliable electronic components without increasing the size of the product.
以下に本発明の実施例を示して、本発明の特徴とするところをさらに詳しく説明する。
Hereinafter, the features of the present invention will be described in more detail with reference to examples of the present invention.
図１は本発明の実施例にかかる電子部品の構成を示す正面断面図、図２はその斜視図、図３は本発明の電子部品を構成する、機能素子を備えた機能面を有するフリップチップ型実装部品の、機能面の周縁部に沿って、複数の導電性接続部を、所定の間隔をおいて配設した状態を示す図、図４はフリップチップ型実装部品をその機能面を下向きにして配線基板上に載置した状態を示す斜視図である。
FIG. 1 is a front sectional view showing a configuration of an electronic component according to an embodiment of the present invention, FIG. 2 is a perspective view thereof, and FIG. 3 is a flip chip having a functional surface including a functional element constituting the electronic component of the present invention. FIG. 4 is a diagram showing a state in which a plurality of conductive connection portions are arranged at predetermined intervals along the peripheral edge of the functional surface of the mold mounting component. FIG. 4 shows the flip chip mounting component with its functional surface facing downward. It is a perspective view which shows the state mounted on the wiring board.
この実施例１の電子部品は、図１～４に示すように、配線基板１と、配線基板１上にフリップチップ実装された、機能素子２を備えた機能面３を有するフリップチップ型実装部品４と、フリップチップ型実装部品４と配線基板１を電気的に接続する複数の導電性接続部５とを備えている。そして、フリップチップ型実装部品４の周縁部における、配線基板１とフリップチップ型実装部品４との隙間１０は、フリップチップ型実装部品４を覆うように配設された封止樹脂６により封止されている。
As shown in FIGS. 1 to 4, the electronic component of the first embodiment is a flip-chip type mounting component having a functional surface 3 provided with a functional element 2 and flip-chip mounted on the wiring substrate 1. 4 and a plurality of conductive connection portions 5 for electrically connecting the flip chip type mounting component 4 and the wiring board 1. A gap 10 between the wiring substrate 1 and the flip chip type mounting component 4 at the peripheral edge of the flip chip type mounting component 4 is sealed with a sealing resin 6 disposed so as to cover the flip chip type mounting component 4. Has been.
この実施例１の電子部品において、フリップチップ型実装部品部４の機能素子２は、配線基板１とフリップチップ型実装部品４との対向面間に形成される空間、すなわち、配線基板１の上面、機能面３、導電性接続部５、および封止樹脂６により囲まれた空間（内部空間）２０に位置しており、該空間２０には封止樹脂６が侵入しないように構成されている。
In the electronic component of the first embodiment, the functional element 2 of the flip chip type mounting part 4 is a space formed between the facing surfaces of the wiring board 1 and the flip chip type mounting part 4, that is, the upper surface of the wiring board 1. , Is located in a space (internal space) 20 surrounded by the functional surface 3, the conductive connection portion 5, and the sealing resin 6, and is configured so that the sealing resin 6 does not enter the space 20. .
また、この実施例１では、複数の導電性接続部５がフリップチップ型実装部品４の機能面３の周縁部に沿って、所定の間隔をおいて配設されている。なお、導電性接続部５は、配線基板１とフリップチップ型実装部品４に接続される２つの接続面５ａ，５ｂ（図１）を備えており、この接続面５ａ，５ｂが、配線基板１が備える電極（図示せず）およびフリップチップ型実装部品４が備える電極（図示せず）と導通するように構成されている。
Further, in the first embodiment, the plurality of conductive connection portions 5 are arranged along the peripheral edge portion of the functional surface 3 of the flip chip type mounting component 4 at a predetermined interval. The conductive connection portion 5 includes two connection surfaces 5 a and 5 b (FIG. 1) connected to the wiring substrate 1 and the flip chip type mounting component 4. The connection surfaces 5 a and 5 b are connected to the wiring substrate 1. And an electrode (not shown) included in the flip chip type mounting component 4.
そして、互いに隣り合う導電性接続部５の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇが、導電性接続部５の、フリップチップ型実装部品４の機能面３の周縁部に沿う方向（互いに隣り合う導電性接続部５どうしを結ぶ線に沿う方向）の寸法Ｌ（図３）よりも小さくなるように構成されている。
And the dimension (gap of the adjacent conductive connection part 5) G of the clearance gap 10 of the mutually adjacent conductive connection part 5 is set to the peripheral part of the functional surface 3 of the flip chip type mounting component 4 of the conductive connection part 5. It is comprised so that it may become smaller than the dimension L (FIG. 3) of the direction which follows (the direction which follows the line which connects the mutually adjacent conductive connection parts 5).
また、導電性接続部５は、図３を参照して説明すると、フリップチップ型実装部品４の機能面３の周縁部に沿う方向の寸法Ｌが、２つの接続面５ａ，５ｂ間の寸法Ｈ、および、２つの接続面５ａ，５ｂに平行で、かつ、機能面３の周縁部から機能面３の内側に向かう方向の寸法（すなわち、互いに隣り合う導電性接続部５どうしを結ぶ線に直交する方向の寸法）Ｗよりも大きくなるように構成されている。
Further, the conductive connection portion 5 will be described with reference to FIG. 3. The dimension L in the direction along the peripheral edge portion of the functional surface 3 of the flip chip type mounting component 4 is the dimension H between the two connection surfaces 5a and 5b. And dimensions parallel to the two connection surfaces 5a and 5b and in a direction from the peripheral edge of the functional surface 3 to the inner side of the functional surface 3 (that is, orthogonal to a line connecting the conductive connection portions 5 adjacent to each other) It is configured to be larger than the dimension (W).
さらに、互いに隣り合う導電性接続部５の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇは、導電性接続部５の２つの接続面５ａ，５ｂ間の寸法Ｈよりも小さくなるように構成されている。
Furthermore, the dimension (gap between adjacent conductive connection parts 5) G between the adjacent conductive connection parts 5 is smaller than the dimension H between the two connection surfaces 5a and 5b of the conductive connection part 5. It is configured as follows.
また、導電性接続部５は、例えば、ＳｎＣｕＮｉ合金を主成分とする材料から形成されている。このＳｎＣｕＮｉ合金を主成分とする材料を用いることにより、一般的に用いられるＳｎＡｇＣｕ系はんだの融点２１７℃よりも融点が高い、融点が２２０℃以上の導電性接続部５を形成することができる。
Further, the conductive connection portion 5 is formed of, for example, a material mainly composed of a SnCuNi alloy. By using a material mainly composed of this SnCuNi alloy, it is possible to form the conductive connection portion 5 having a melting point higher than the melting point 217 ° C. of a commonly used SnAgCu solder and having a melting point of 220 ° C. or more.
なお、２２０℃以下では溶融しない導電性材料５は、上記のＳｎＣｕＮｉ合金を主成分として含む材料以外にも、ＳｎＣｕ、ＡｕＳｎ、ＢｉＡｇ、ＳｎＳｂ、ＰｂＳｎ、ＳｎＡｇのいずれか１種の合金を主たる成分として含有し、２２０℃以下では溶融しない材料や、ＳｎＣｕＭｎ、ＳｎＣｕＡｌ、ＳｎＣｕＣｒ、ＳｎＣｕＧｅのいずれか１種の合金を主たる成分として含有する材料などから形成することが可能である。
The conductive material 5 that does not melt at 220 ° C. or lower includes, in addition to the above-described material containing the SnCuNi alloy as a main component, any one alloy of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg as a main component. It can be formed from a material that contains and does not melt at 220 ° C. or lower, or a material that contains any one alloy of SnCuMn, SnCuAl, SnCuCr, SnCuGe as a main component.
上述のように構成された電子部品においては、隣り合う導電性接続部５の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇが、フリップチップ型実装部品４の機能面３の周縁部に沿う方向の寸法Ｌよりも小さくなるように構成されていることから、配線基板１とフリップチップ型実装部品４との機能的な接続を行う機能を果たす導電性接続部５に、内部空間２０（図１，２）に封止樹脂６が浸入することを抑制、防止する機能をも果たさせることが可能になり、別途封止樹脂６の侵入を防止するための部材などが不要になる。その結果、製品の大型化を招くことなく、信頼性の高い電子部品を得ることができる。
In the electronic component configured as described above, the size of the gap 10 between the adjacent conductive connection portions 5 (the interval between the adjacent conductive connection portions 5) G is the peripheral edge of the functional surface 3 of the flip chip type mounting component 4. Since it is configured to be smaller than the dimension L in the direction along the portion, the conductive connection portion 5 that performs the function of performing the functional connection between the wiring board 1 and the flip chip type mounting component 4 has an internal space. 20 (FIGS. 1 and 2) can be controlled and prevented from entering the sealing resin 6, and a member for preventing the sealing resin 6 from entering is unnecessary. Become. As a result, a highly reliable electronic component can be obtained without increasing the size of the product.
また、フリップチップ型実装部品４の機能面３の周縁部に沿う方向（隣り合う導電性接続部５どうしを結ぶ線に沿う方向）の寸法Ｌが、上述の寸法Ｈ、および、寸法Ｗよりも大きくなるように構成されているので、内部空間２０に封止樹脂６が浸入することをより確実に抑制、防止することができる。
Further, the dimension L in the direction along the peripheral edge of the functional surface 3 of the flip-chip mounting component 4 (the direction along the line connecting the adjacent conductive connection parts 5) is larger than the above-described dimension H and dimension W. Since it is configured to be large, it is possible to more reliably suppress and prevent the sealing resin 6 from entering the internal space 20.
さらに、互いに隣り合う導電性接続部５の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇを、導電性接続部５の２つの接続面５ａ，５ｂ間の寸法Ｈよりも小さくしているので、封止樹脂６により封止される内部空間２０に封止樹脂６が浸入することを、導電性接続部５によってさらに確実に抑制、防止することができる。
Further, the size of the gap 10 between the adjacent conductive connection portions 5 (the interval between the adjacent conductive connection portions 5) G is made smaller than the size H between the two connection surfaces 5a and 5b of the conductive connection portion 5. Therefore, the conductive connecting portion 5 can more reliably suppress and prevent the sealing resin 6 from entering the internal space 20 sealed by the sealing resin 6.
また、導電性接続部５が、２２０℃以下では溶融しないように構成されているので、その後の再リフローでの溶融を防止することができる。
In addition, since the conductive connection portion 5 is configured not to melt at 220 ° C. or lower, it is possible to prevent melting in subsequent reflow.
次に、上述の電子部品の製造方法について説明する。
(１)配線基板の用意
まず、フリップチップ型実装部品４が実装される配線基板１を用意する。配線基板１としては、アルミナ基板、アルミナにホウケイ酸ガラスや酸化ケイ素を加えたガラスセラミック基板、Ｂａ-Ｔｉ系、Ｓｒ-Ｔｉ系、Ｂａ-Ａｌ-Ｓｉ系など酸化物からなる配線基板、ＬｉＴａＯ3、ＬｉＮｂＯ3などからなる圧電基板、プリント配線基板などをはじめとする樹脂配線基板などの公知の配線基板を用いることが可能である。
なお、この実施例１では、アルミナにホウケイ酸ガラスや酸化ケイ素を加えたガラスセラミック基板を用いた。 Next, a method for manufacturing the above-described electronic component will be described.
(1) Preparation of Wiring Board First, thewiring board 1 on which the flip chip type mounting component 4 is mounted is prepared. As the wiring substrate 1, an alumina substrate, a glass ceramic substrate obtained by adding borosilicate glass or silicon oxide to alumina, a wiring substrate made of an oxide such as Ba—Ti, Sr—Ti, Ba—Al—Si, LiTaO 3 It is possible to use a known wiring board such as a piezoelectric wiring board made of LiNbO 3 or the like, a resin wiring board such as a printed wiring board or the like.
In Example 1, a glass ceramic substrate in which borosilicate glass or silicon oxide was added to alumina was used.
(１)配線基板の用意
まず、フリップチップ型実装部品４が実装される配線基板１を用意する。配線基板１としては、アルミナ基板、アルミナにホウケイ酸ガラスや酸化ケイ素を加えたガラスセラミック基板、Ｂａ-Ｔｉ系、Ｓｒ-Ｔｉ系、Ｂａ-Ａｌ-Ｓｉ系など酸化物からなる配線基板、ＬｉＴａＯ3、ＬｉＮｂＯ3などからなる圧電基板、プリント配線基板などをはじめとする樹脂配線基板などの公知の配線基板を用いることが可能である。
なお、この実施例１では、アルミナにホウケイ酸ガラスや酸化ケイ素を加えたガラスセラミック基板を用いた。 Next, a method for manufacturing the above-described electronic component will be described.
(1) Preparation of Wiring Board First, the
In Example 1, a glass ceramic substrate in which borosilicate glass or silicon oxide was added to alumina was used.
(２)フリップチップ型実装部品の用意
配線基板１上に実装されるフリップチップ型実装部品４を用意する。この実施例１では、フリップチップ型実装部品４として、弾性表面波装置（ＳＡＷチップ）を用いた。
なお、フリップチップ型実装部品としては、ＳＡＷチップに限らず、ＭＥＭＳチップなどであってもよい。また、フリップチップ型実装部品は、必ずしも中空封止が必要なベアチップの場合に限られるものではなく、特性変動を抑えるために機能面に封止樹脂による応力を加えたくない場合や、チップ中央部に配置されている溶融接合部での封止樹脂との接合による不良を回避したい場合などにおいては、携帯電話、無線ＬＡＮ、Ｂｌｕｅｔｏｏｔｈ（登録商標）などに用いるＩＣ、ＰＡスイッチなどのベアチップであってもよい。
さらに、本発明は、パッケージ部品やアレイ型のチップ部品などに対しても適用が可能である。 (2) Preparation of Flip Chip Type Mounting Component A flip chiptype mounting component 4 to be mounted on the wiring board 1 is prepared. In Example 1, a surface acoustic wave device (SAW chip) was used as the flip chip type mounting component 4.
Note that the flip-chip mounting component is not limited to the SAW chip, but may be a MEMS chip. In addition, flip chip mounting components are not necessarily limited to bare chips that require hollow sealing. If you do not want to apply stress due to the sealing resin to the functional surface to suppress fluctuations in characteristics, In the case where it is desired to avoid defects due to bonding with the sealing resin at the fusion bonding portion arranged in the IC, it is a bare chip such as an IC or PA switch used for a mobile phone, wireless LAN, Bluetooth (registered trademark), etc. Also good.
Furthermore, the present invention can be applied to package parts and array type chip parts.
配線基板１上に実装されるフリップチップ型実装部品４を用意する。この実施例１では、フリップチップ型実装部品４として、弾性表面波装置（ＳＡＷチップ）を用いた。
なお、フリップチップ型実装部品としては、ＳＡＷチップに限らず、ＭＥＭＳチップなどであってもよい。また、フリップチップ型実装部品は、必ずしも中空封止が必要なベアチップの場合に限られるものではなく、特性変動を抑えるために機能面に封止樹脂による応力を加えたくない場合や、チップ中央部に配置されている溶融接合部での封止樹脂との接合による不良を回避したい場合などにおいては、携帯電話、無線ＬＡＮ、Ｂｌｕｅｔｏｏｔｈ（登録商標）などに用いるＩＣ、ＰＡスイッチなどのベアチップであってもよい。
さらに、本発明は、パッケージ部品やアレイ型のチップ部品などに対しても適用が可能である。 (2) Preparation of Flip Chip Type Mounting Component A flip chip
Note that the flip-chip mounting component is not limited to the SAW chip, but may be a MEMS chip. In addition, flip chip mounting components are not necessarily limited to bare chips that require hollow sealing. If you do not want to apply stress due to the sealing resin to the functional surface to suppress fluctuations in characteristics, In the case where it is desired to avoid defects due to bonding with the sealing resin at the fusion bonding portion arranged in the IC, it is a bare chip such as an IC or PA switch used for a mobile phone, wireless LAN, Bluetooth (registered trademark), etc. Also good.
Furthermore, the present invention can be applied to package parts and array type chip parts.
(３)導電性接続部の用意
配線基板１とフリップチップ型実装部品４とを接続する導電性接続部５を用意する。なお、導電性接続部５を構成する材料としては、配線基板１およびフリップチップ型実装部品４に形成された電極を構成する材料との関係などを考慮して、上述のような種々の材料を用いることが可能である。 (3) Preparation of Conductive Connection Part Aconductive connection part 5 for connecting the wiring substrate 1 and the flip chip type mounting component 4 is prepared. In addition, as a material which comprises the conductive connection part 5, considering the relationship with the material which comprises the electrode formed in the wiring board 1 and the flip chip type mounting component 4, etc., the above various materials are used. It is possible to use.
配線基板１とフリップチップ型実装部品４とを接続する導電性接続部５を用意する。なお、導電性接続部５を構成する材料としては、配線基板１およびフリップチップ型実装部品４に形成された電極を構成する材料との関係などを考慮して、上述のような種々の材料を用いることが可能である。 (3) Preparation of Conductive Connection Part A
(４)配線基板へのフリップチップ型実装部品の実装
配線基板１に、フリップチップ型実装部品４を実装して、フリップチップ型実装部品４が、導電性接続部５を介して、配線基板１と電気的に接続された構造体を形成する（図４参照）。
配線基板１にフリップチップ型実装部品４を実装するにあたっては、例えば、図３に示すように、フリップチップ型実装部品４の機能面３に、直方体状の導電性接続部５を複数個、フリップチップ型実装部品４の機能面３の周縁部に、互いに隣り合う導電性接続部５どうしを結ぶ線に沿う方向（フリップチップ型実装部品４の機能面３の周縁部に沿う方向）の寸法Ｌよりも小さい間隔Ｇをおいて配置し、導電性接続部５により、配線基板１の電極とフリップチップ型実装部品４の電極とを電気的に接続する。 (4) Mounting of flip chip type mounting component on wiring board Flip chiptype mounting component 4 is mounted on wiring board 1, and flip chip type mounting component 4 is connected to wiring board 1 via conductive connection portion 5. And a structure electrically connected to each other is formed (see FIG. 4).
When the flip chiptype mounting component 4 is mounted on the wiring board 1, for example, as shown in FIG. 3, a plurality of rectangular parallelepiped conductive connection portions 5 are flipped on the functional surface 3 of the flip chip type mounting component 4. A dimension L in a direction along the line connecting the conductive connecting portions 5 adjacent to each other at the peripheral portion of the functional surface 3 of the chip-type mounting component 4 (direction along the peripheral portion of the functional surface 3 of the flip-chip mounting component 4). The electrode of the wiring board 1 and the electrode of the flip chip type mounting component 4 are electrically connected by the conductive connecting portion 5 with a smaller gap G.
配線基板１に、フリップチップ型実装部品４を実装して、フリップチップ型実装部品４が、導電性接続部５を介して、配線基板１と電気的に接続された構造体を形成する（図４参照）。
配線基板１にフリップチップ型実装部品４を実装するにあたっては、例えば、図３に示すように、フリップチップ型実装部品４の機能面３に、直方体状の導電性接続部５を複数個、フリップチップ型実装部品４の機能面３の周縁部に、互いに隣り合う導電性接続部５どうしを結ぶ線に沿う方向（フリップチップ型実装部品４の機能面３の周縁部に沿う方向）の寸法Ｌよりも小さい間隔Ｇをおいて配置し、導電性接続部５により、配線基板１の電極とフリップチップ型実装部品４の電極とを電気的に接続する。 (4) Mounting of flip chip type mounting component on wiring board Flip chip
When the flip chip
なお、例えば、超音波接合による方法で、導電性接続部５を介して、フリップチップ型実装部品４を配線基板１に実装する場合には、導電性接続部５（を構成ずる材料）として、Ａｕなどの公知の材料を用いることが可能である。
For example, when the flip chip type mounting component 4 is mounted on the wiring board 1 via the conductive connection portion 5 by a method using ultrasonic bonding, the conductive connection portion 5 (material constituting the conductive connection portion 5) A known material such as Au can be used.
また、リフロー加熱などの方法で実装する場合には、導電性接続部５（を構成する材料）として、ＳｎＡｇＣｕなどの合金組成のものを使用することが可能である。
Also, when mounting by a method such as reflow heating, an alloy composition such as SnAgCu can be used as the conductive connection portion 5 (material constituting the conductive connection portion 5).
ただし、２２０℃以下で溶融する合金組成の場合、後述する封止樹脂の種類によっては、合金（導電性接続部）の溶融の影響により、封止樹脂が破断したり、溶融した合金成分が周囲にまで広がり、不具合を生じる場合がある。特に封止樹脂の厚みが薄い場合に破断が生じやすいため、ＳｎＣｕ、ＡｕＳｎ、ＢｉＡｇ、ＳｎＳｂ、ＰｂＳｎ、ＳｎＡｇなどの溶融後に高融点化する組成の合金を使うことが望ましい。
However, in the case of an alloy composition that melts at 220 ° C. or lower, depending on the type of sealing resin to be described later, the sealing resin is broken or the molten alloy component is surrounded by the influence of the melting of the alloy (conductive connection part). In some cases, the problem spreads. In particular, when the sealing resin is thin, breakage is likely to occur. Therefore, it is desirable to use an alloy having a composition with a high melting point after melting, such as SnCu, AuSn, BiAg, SnSb, PbSn, SnAg.
また、上述の合金では、拡散速度の問題から十分に高融点化しない、高融点化に要する時間が長くなり過ぎるなどの問題がある場合には、ＳｎＣｕＮｉ、ＳｎＣｕＭｎ、ＳｎＣｕＡｌ、ＳｎＣｕＣｒ、ＳｎＣｕＧｅのいずれかを含む合金層を用いることができる。その場合、上記問題を解消することができる。
Further, in the case of the above-mentioned alloy, when there is a problem that the melting point is not sufficiently increased due to the problem of diffusion rate, or the time required for increasing the melting point becomes too long, any one of SnCuNi, SnCuMn, SnCuAl, SnCuCr, SnCuGe An alloy layer containing can be used. In that case, the above problem can be solved.
さらには、例えばＳｎＣｕＮｉ合金を主成分とする導電性接続部５を形成するにあたっては、予め、めっきなどによりＣｕＮｉ合金を、導電性接続部５が接続される電極である、配線基板１に配設された実装用の電極およびフリップチップ型実装部品に配設された実装用の電極の、少なくとも一方に設けておき、このＣｕＮｉ合金と接するように、ＳｎＡｇＣｕやＳｎＢｉなどの低温溶融合金からなる導電性材料が配置された状態となるように、フリップチップ型実装部品４を配線基板１上に載置してリフロー加熱することにより、高融点のＳｎＣｕＮｉ合金を生じさせて導電性接続部５を高融点化することも可能である。
Furthermore, for example, when forming the conductive connection portion 5 mainly composed of SnCuNi alloy, the CuNi alloy is previously disposed on the wiring substrate 1 which is an electrode to which the conductive connection portion 5 is connected by plating or the like. Conductive material made of a low-temperature melting alloy such as SnAgCu or SnBi so as to be provided on at least one of the mounting electrode and the mounting electrode disposed on the flip chip type mounting component and to be in contact with the CuNi alloy The flip chip type mounting component 4 is placed on the wiring board 1 and reflow-heated so that the material is arranged, thereby generating a high melting point SnCuNi alloy, thereby making the conductive connection portion 5 a high melting point. It is also possible to
また、配線基板１側の電極とフリップチップ型実装部品４側の電極との間に、ＣｕＮｉ合金柱をＳｎＡｇＣｕやＳｎＢｉなどの低温溶融合金を介して配置し、配線基板１側の電極からフリップチップ型実装部品４側の電極に向かって、配線基板側電極－前記低温溶融合金－前記ＣｕＮｉ合金柱－前記低温溶融合金－フリップチップ型実装部品側電極の順となるようにセットした後、リフロー加熱することにより、配線基板側電極とフリップチップ型実装部品側電極とが、高融点の導電性接続部により接続された構成とすることも可能である。
Further, a CuNi alloy column is disposed between the electrode on the wiring board 1 side and the electrode on the flip chip type mounting component 4 side via a low-temperature molten alloy such as SnAgCu or SnBi, and the flip chip is removed from the wiring board 1 side electrode. Reflow heating after setting the wiring board side electrode, the low temperature molten alloy, the CuNi alloy pillar, the low temperature molten alloy, and the flip chip type mounting component side electrode in this order toward the electrode on the mold mounting component 4 side By doing so, it is also possible to adopt a configuration in which the wiring board side electrode and the flip chip type mounting component side electrode are connected by the high melting point conductive connection portion.
(５)封止樹脂による封止
フリップチップ型実装部品４の周縁部における配線基板１とフリップチップ型実装部品４との隙間１０を、封止樹脂６により封止する。 (5) Sealing with Sealing Resin Thegap 10 between the wiring substrate 1 and the flip chip mounting component 4 at the peripheral edge of the flip chip mounting component 4 is sealed with the sealing resin 6.
フリップチップ型実装部品４の周縁部における配線基板１とフリップチップ型実装部品４との隙間１０を、封止樹脂６により封止する。 (5) Sealing with Sealing Resin The
ここで用いる封止樹脂としては、公知のエポキシ樹脂などの熱硬化性樹脂が好適であるが、低温で軟化接合する熱可塑性樹脂なども使用することが可能である。
As the sealing resin used here, a thermosetting resin such as a known epoxy resin is suitable, but a thermoplastic resin that is softened and bonded at a low temperature can also be used.
封止樹脂（層）による封止方法としては、粘度の高い液状樹脂をフリップチップ型実装部品の側面部などに塗布する方法や、シート状に成形した樹脂（樹脂シート）を加熱により柔らかくした状態で、フリップチップ型実装部品を覆うように、その上面側から側面側にまで回り込むように配置し、加熱する方法などがある。
なお、加熱して軟化した状態の樹脂の粘度は、１Ｐａ・ｓ～７５Ｐａ・ｓであることが好ましい。粘度が１Ｐａ・ｓ以上である場合、内部空間に封止樹脂が侵入することを確実に抑制することができ、７５Ｐａ・ｓ以下である場合、封止樹脂の加工性が良好で、容易に樹脂封止を行うことができる。 As a sealing method with a sealing resin (layer), a method in which a liquid resin having a high viscosity is applied to a side surface portion of a flip chip type mounting component, or a resin (resin sheet) molded into a sheet shape is softened by heating. In order to cover the flip chip type mounting component, there is a method of arranging and heating from the upper surface side to the side surface side.
The viscosity of the resin softened by heating is preferably 1 Pa · s to 75 Pa · s. When the viscosity is 1 Pa · s or more, the sealing resin can be reliably prevented from entering the internal space. When the viscosity is 75 Pa · s or less, the processability of the sealing resin is good and the resin is easily Sealing can be performed.
なお、加熱して軟化した状態の樹脂の粘度は、１Ｐａ・ｓ～７５Ｐａ・ｓであることが好ましい。粘度が１Ｐａ・ｓ以上である場合、内部空間に封止樹脂が侵入することを確実に抑制することができ、７５Ｐａ・ｓ以下である場合、封止樹脂の加工性が良好で、容易に樹脂封止を行うことができる。 As a sealing method with a sealing resin (layer), a method in which a liquid resin having a high viscosity is applied to a side surface portion of a flip chip type mounting component, or a resin (resin sheet) molded into a sheet shape is softened by heating. In order to cover the flip chip type mounting component, there is a method of arranging and heating from the upper surface side to the side surface side.
The viscosity of the resin softened by heating is preferably 1 Pa · s to 75 Pa · s. When the viscosity is 1 Pa · s or more, the sealing resin can be reliably prevented from entering the internal space. When the viscosity is 75 Pa · s or less, the processability of the sealing resin is good and the resin is easily Sealing can be performed.
この実施例１では、配線基板１とフリップチップ型実装部品４を導電性接続部５を介して接続した後に、フリップチップ型実装部品４の上面に樹脂シートを配置し、全体を真空吸引した状態で、樹脂シートが軟化する温度にまで加熱し、軟化した樹脂シートの周辺部が垂れ下がって、配線基板と接触した後に大気圧に戻す方法によって樹脂封止を行った。
In this Example 1, after connecting the wiring board 1 and the flip chip type mounting component 4 via the conductive connection portion 5, the resin sheet is arranged on the upper surface of the flip chip type mounting component 4, and the whole is vacuum-sucked. Then, the resin sheet was sealed by heating to a temperature at which the resin sheet was softened, and the peripheral part of the softened resin sheet was suspended and returned to atmospheric pressure after contacting the wiring board.
これにより、図１に示すような、配線基板１上にフリップチップ型実装部品４が導電性接続部５を介して搭載され、電気的に接続されているとともに、全体が封止樹脂６により封止されており、かつ、機能部が存在する樹脂封止された内部空間２０に封止樹脂６が浸入していない、信頼性の高い電子部品を得ることができる。
As a result, as shown in FIG. 1, the flip chip type mounting component 4 is mounted on the wiring board 1 via the conductive connection portion 5 and is electrically connected, and the whole is sealed with the sealing resin 6. A highly reliable electronic component in which the sealing resin 6 does not enter the resin-sealed internal space 20 that is stopped and has a functional portion can be obtained.
[効果の確認]
本発明の作用効果を確認するため、図１に示すような構造を有する電子部品であって、
(１)フリップチップ型実装部品４の平面寸法：２ｍｍ□（一辺が２ｍｍの正方形）、
(２)配線基板１とフリップチップ型実装部品４の、対向面間の距離（すなわち、配線基板１の上面と、フリップチップ型実装部品４の機能面（下面）３間の寸法）（図３の寸法Ｈ）：１００μｍ、
(３)導電性接続部５の、機能面３の周縁部から機能面３の内側に向かう方向の寸法である奥行き寸法（図３の寸法Ｗ）：１００μｍ
(４)導電性接続部５により接続される、フリップチップ型実装部品４が備える電極と、配線基板が備える電極とが、同一形状、同一面積
の各条件を満たす一方、
(ａ)導電性接続部５の、機能面３の周縁部に沿う方向（隣り合う導電性接続部５どうしを結ぶ線に沿う方向）の寸法Ｌ、および
(ｂ)互いに隣り合う導電性接続部５間の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇ
を表１に示す範囲で変化させた電子部品を作製した。
そして、作製した各電子部品について、封止樹脂６の内部空間２０への侵入率を調べ、封止樹脂の侵入防止効果を評価した。なお、ここで用いた封止樹脂の粘度（加熱時軟化状態における粘度）は、２～１０Ｐａ・Ｓである。
表１にその結果を示す。なお、表１において試料番号に＊を付した試料は本発明の要件を満たさない試料（比較例）である。 [Confirmation of effect]
In order to confirm the effect of the present invention, an electronic component having a structure as shown in FIG.
(1) Plane dimension of flip chip type mounting component 4: 2 mm □ (square with a side of 2 mm),
(2) The distance between the opposing surfaces of thewiring board 1 and the flip chip type mounting component 4 (that is, the dimension between the upper surface of the wiring board 1 and the functional surface (lower surface) 3 of the flip chip type mounting component 4) (FIG. 3). Dimension H): 100 μm,
(3) Depth dimension (dimension W in FIG. 3) which is a dimension of the conductive connectingportion 5 in a direction from the peripheral edge of the functional surface 3 toward the inside of the functional surface 3: 100 μm
(4) While the electrode provided in the flip chiptype mounting component 4 and the electrode provided in the wiring board connected by the conductive connection portion 5 satisfy the respective conditions of the same shape and the same area,
(a) Dimension L in the direction along the peripheral edge of thefunctional surface 3 of the conductive connection portion 5 (direction along the line connecting the adjacent conductive connection portions 5), and (b) Conductive connection portions adjacent to each other. Dimension of gap 10 between 5 (interval between adjacent conductive connection parts 5) G
An electronic component was manufactured in which the value was changed within the range shown in Table 1.
And about each produced electronic component, the penetration rate to theinternal space 20 of sealing resin 6 was investigated, and the penetration | invasion prevention effect of sealing resin was evaluated. The viscosity of the sealing resin used here (viscosity when heated) is 2 to 10 Pa · S.
Table 1 shows the results. In Table 1, samples with a sample number marked with * are samples (comparative examples) that do not satisfy the requirements of the present invention.
本発明の作用効果を確認するため、図１に示すような構造を有する電子部品であって、
(１)フリップチップ型実装部品４の平面寸法：２ｍｍ□（一辺が２ｍｍの正方形）、
(２)配線基板１とフリップチップ型実装部品４の、対向面間の距離（すなわち、配線基板１の上面と、フリップチップ型実装部品４の機能面（下面）３間の寸法）（図３の寸法Ｈ）：１００μｍ、
(３)導電性接続部５の、機能面３の周縁部から機能面３の内側に向かう方向の寸法である奥行き寸法（図３の寸法Ｗ）：１００μｍ
(４)導電性接続部５により接続される、フリップチップ型実装部品４が備える電極と、配線基板が備える電極とが、同一形状、同一面積
の各条件を満たす一方、
(ａ)導電性接続部５の、機能面３の周縁部に沿う方向（隣り合う導電性接続部５どうしを結ぶ線に沿う方向）の寸法Ｌ、および
(ｂ)互いに隣り合う導電性接続部５間の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇ
を表１に示す範囲で変化させた電子部品を作製した。
そして、作製した各電子部品について、封止樹脂６の内部空間２０への侵入率を調べ、封止樹脂の侵入防止効果を評価した。なお、ここで用いた封止樹脂の粘度（加熱時軟化状態における粘度）は、２～１０Ｐａ・Ｓである。
表１にその結果を示す。なお、表１において試料番号に＊を付した試料は本発明の要件を満たさない試料（比較例）である。 [Confirmation of effect]
In order to confirm the effect of the present invention, an electronic component having a structure as shown in FIG.
(1) Plane dimension of flip chip type mounting component 4: 2 mm □ (square with a side of 2 mm),
(2) The distance between the opposing surfaces of the
(3) Depth dimension (dimension W in FIG. 3) which is a dimension of the conductive connecting
(4) While the electrode provided in the flip chip
(a) Dimension L in the direction along the peripheral edge of the
An electronic component was manufactured in which the value was changed within the range shown in Table 1.
And about each produced electronic component, the penetration rate to the
Table 1 shows the results. In Table 1, samples with a sample number marked with * are samples (comparative examples) that do not satisfy the requirements of the present invention.
なお、表１において、封止樹脂６の浸入率は、導電性接続部５の奥行き寸法（図３のＷの寸法）を１００とした場合の、フリップチップ型実装部品４の機能面３の周縁部から奥行き方向への封止樹脂の浸入長さの比率（（侵入長さ／Ｗ寸法）×１００）（％）を示している。
In Table 1, the penetration rate of the sealing resin 6 is the peripheral edge of the functional surface 3 of the flip chip type mounting component 4 when the depth dimension of the conductive connection portion 5 (the dimension of W in FIG. 3) is 100. The ratio of the penetration length of the sealing resin from the portion to the depth direction ((intrusion length / W dimension) × 100) (%) is shown.
また、良否の判定は、フリップチップ型実装部品４の機能面３に備える機能素子（この実施例１では弾性表面波素子）２への悪影響のない範囲のもの、すなわち、上記の比率が１００％以内のものを○（良）、１００％を大きく下回るものを◎（優良）と判定し、上記の比率が１００％を超えるものを×（不可）と判定した。
In addition, the pass / fail judgment is made in a range that does not adversely affect the functional element (surface acoustic wave element in this embodiment 1) 2 provided on the functional surface 3 of the flip chip type mounting component 4, that is, the above ratio is 100%. Those within the range were judged as ◯ (good), those far below 100% were judged as ◎ (excellent), and those with the above ratio exceeding 100% were judged as x (impossible).
表１に示すように、互いに隣り合う導電性接続部５の隙間１０の寸法（隣り合う導電性接続部５の間隔）Ｇのほうが、導電性接続部５の、機能面３の周縁部に沿う方向（隣り合う導電性接続部５どうしを結ぶ線に沿う方向）の寸法Ｌと同じかそれよりも大きい、本発明の要件を満たしていない試料（試料番号１～３および６の試料）の場合、封止樹脂６の浸入率が１００％を超えることが確認された。
これに対し、寸法Ｇを、寸法Ｌより小さくした、本発明の要件を満たす試料（試料番号４，５および７～１５）の場合、封止樹脂６の浸入率が大幅に低下することが確認された。 As shown in Table 1, the dimension of thegap 10 between the adjacent conductive connection parts 5 (the interval between the adjacent conductive connection parts 5) G is along the peripheral part of the functional surface 3 of the conductive connection part 5. In the case of a sample that does not satisfy the requirements of the present invention (samples of sample numbers 1 to 3 and 6) that is equal to or larger than the dimension L in the direction (the direction along the line connecting the adjacent conductive connecting portions 5) It was confirmed that the penetration rate of the sealing resin 6 exceeded 100%.
On the other hand, in the case of samples satisfying the requirements of the present invention with the dimension G smaller than the dimension L ( sample numbers 4, 5, and 7 to 15), it is confirmed that the penetration rate of the sealing resin 6 is greatly reduced. It was done.
これに対し、寸法Ｇを、寸法Ｌより小さくした、本発明の要件を満たす試料（試料番号４，５および７～１５）の場合、封止樹脂６の浸入率が大幅に低下することが確認された。 As shown in Table 1, the dimension of the
On the other hand, in the case of samples satisfying the requirements of the present invention with the dimension G smaller than the dimension L (
さらに、試料番号７～１５の試料は、導電性接続部５の寸法Ｌが、導電性接続部５の奥行き寸法（図３のＷの寸法）（１００μｍ固定）より大きい試料であり、この試料番号７～１５の試料においては、寸法Ｇに着目した場合において、寸法Ｇが同じときには、封止樹脂６の侵入率がより低くなることが確認された（試料番号４と試料番号９，１４の比較、および試料番号５と試料番号１０，１５の比較）。
Further, samples Nos. 7 to 15 are samples in which the dimension L of the conductive connection part 5 is larger than the depth dimension of the conductive connection part 5 (the dimension of W in FIG. 3) (fixed at 100 μm). In the samples 7 to 15, it was confirmed that the penetration rate of the sealing resin 6 is lower when the dimension G is the same when focusing on the dimension G (comparison between the sample number 4 and the sample numbers 9 and 14). And comparison of sample number 5 and sample numbers 10 and 15).
なお、上記実施例１では、図１に示すように、封止樹脂６が配線基板１の上面の一部、フリップチップ型実装部品４の側面および上面を覆い、全体形状が略直方体形状となるように構成された電子部品を例にとって説明したが、本発明においては、フリップチップ型実装部品の機能面の周縁部において、配線基板とフリップチップ型実装部品の隙間を確実に封止することができる限りにおいて、封止樹脂６を種々の態様で配設することが可能である。
In the first embodiment, as shown in FIG. 1, the sealing resin 6 covers a part of the upper surface of the wiring substrate 1, the side surfaces and the upper surface of the flip chip type mounting component 4, and the overall shape becomes a substantially rectangular parallelepiped shape. In the present invention, the gap between the wiring board and the flip chip mounting component can be reliably sealed at the peripheral portion of the functional surface of the flip chip mounting component. As long as possible, the sealing resin 6 can be arranged in various ways.
また、本発明の電子部品においては、封止樹脂（層）を覆うように、導電性樹脂などの導電性材料からなるシールド層を配設することも可能であり、その場合には、外部からの電磁波の侵入や、外部への電磁波の漏洩を低減することが可能になる。
本発明においては、配線基板１とフリップチップ型実装部品４との機能的な接続を行う機能を果たす導電性接続部５に、内部空間２０（図１，２）に封止樹脂６が浸入することを抑制、防止する機能をも果たさせることが可能である。導電性接続部５としては合金組成のもののみならず、それに替えてＡｕやＣｕからなる純金属を用いてもよいし、導電性樹脂や金属ナノペーストを印刷形成したものなどを用いてもよい。
なお、本発明において、導電性接続部の具体的な形状に特別の制約はなく、円柱状、角柱状などの種々の形状ものを用いることが可能である。 In the electronic component of the present invention, a shield layer made of a conductive material such as a conductive resin can be disposed so as to cover the sealing resin (layer). It is possible to reduce intrusion of electromagnetic waves and leakage of electromagnetic waves to the outside.
In the present invention, the sealingresin 6 enters the internal space 20 (FIGS. 1 and 2) into the conductive connection portion 5 that performs the function of performing the functional connection between the wiring board 1 and the flip chip type mounting component 4. It is also possible to fulfill the function of suppressing and preventing this. The conductive connection portion 5 is not limited to an alloy composition, and instead, a pure metal made of Au or Cu may be used, or a conductive resin or a metal nano paste printed or the like may be used. .
In the present invention, there are no particular restrictions on the specific shape of the conductive connection portion, and various shapes such as a columnar shape and a prismatic shape can be used.
本発明においては、配線基板１とフリップチップ型実装部品４との機能的な接続を行う機能を果たす導電性接続部５に、内部空間２０（図１，２）に封止樹脂６が浸入することを抑制、防止する機能をも果たさせることが可能である。導電性接続部５としては合金組成のもののみならず、それに替えてＡｕやＣｕからなる純金属を用いてもよいし、導電性樹脂や金属ナノペーストを印刷形成したものなどを用いてもよい。
なお、本発明において、導電性接続部の具体的な形状に特別の制約はなく、円柱状、角柱状などの種々の形状ものを用いることが可能である。 In the electronic component of the present invention, a shield layer made of a conductive material such as a conductive resin can be disposed so as to cover the sealing resin (layer). It is possible to reduce intrusion of electromagnetic waves and leakage of electromagnetic waves to the outside.
In the present invention, the sealing
In the present invention, there are no particular restrictions on the specific shape of the conductive connection portion, and various shapes such as a columnar shape and a prismatic shape can be used.
本発明は、さらにその他の点においても上記実施例に限定されるものではなく、配線基板の具体的な構成、配線基板本体の構成材料の種類、フリップチップ型実装部品の具体的な種類や構成、導電性接続部の構成材料や配設態様などに関し、発明の範囲内において、種々の応用、変形を加えることが可能である。
The present invention is not limited to the above embodiment in other points as well, and the specific configuration of the wiring board, the type of the constituent material of the wiring board main body, and the specific type and configuration of the flip chip type mounting component Various applications and modifications can be made within the scope of the invention with respect to the constituent material and arrangement of the conductive connection portion.
１ 配線基板
２ 機能素子（例えば弾性表面波素子）
３ 機能面
４ フリップチップ型実装部品
５ 導電性接続部
５ａ，５ｂ 導電性接続部の接続面
６ 封止樹脂
１０ フリップチップ型実装部品の機能面と配線基板との隙間
２０ 内部空間
Ｇ 互いに隣り合う導電性接続部５の間隔
Ｌ 導電性接続部の、隣り合う導電性接続部を結ぶ線に沿う方向の寸法
Ｗ 導電性接続部の、機能面の周縁部から奥に向かう方向の寸法
Ｈ 導電性接続部の２つの接続面間の寸法 DESCRIPTION OFSYMBOLS 1 Wiring board 2 Functional element (For example, surface acoustic wave element)
DESCRIPTION OFSYMBOLS 3 Functional surface 4 Flip chip type mounting component 5 Conductive connection part 5a, 5b Connection surface of conductive connection part 6 Sealing resin 10 Gap between functional surface of flip chip type mounting part and wiring board 20 Internal space G Adjacent to each other Distance between conductive connection portions L Dimension of conductive connection portion along a line connecting adjacent conductive connection portions W Dimension of conductive connection portion in a direction from the peripheral edge of the functional surface to the depth H Conductivity Dimensions between the two connection surfaces of the connection
２ 機能素子（例えば弾性表面波素子）
３ 機能面
４ フリップチップ型実装部品
５ 導電性接続部
５ａ，５ｂ 導電性接続部の接続面
６ 封止樹脂
１０ フリップチップ型実装部品の機能面と配線基板との隙間
２０ 内部空間
Ｇ 互いに隣り合う導電性接続部５の間隔
Ｌ 導電性接続部の、隣り合う導電性接続部を結ぶ線に沿う方向の寸法
Ｗ 導電性接続部の、機能面の周縁部から奥に向かう方向の寸法
Ｈ 導電性接続部の２つの接続面間の寸法 DESCRIPTION OF
DESCRIPTION OF
Claims (13)
- 機能素子を備えた機能面を有するフリップチップ型実装部品と、
前記フリップチップ型実装部品が実装される配線基板と、
前記フリップチップ型実装部品と前記配線基板を電気的に接続する複数の導電性接続部と
を備え、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間が封止樹脂により封止された電子部品であって、
前記導電性接続部は、柱状で前記フリップチップ型実装部品および前記配線基板に接続される２つの接続面を備えているとともに、
前記複数の導電性接続部が、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、所定の間隔をおいて配設されており、かつ、
互いに隣り合う前記導電性接続部の間隔が、前記導電性接続部の、前記フリップチップ型実装部品の前記機能面の周縁部に沿う方向の寸法よりも小さいこと
を特徴とする電子部品。 Flip chip type mounting parts having functional surfaces with functional elements;
A wiring board on which the flip chip type mounting component is mounted;
A plurality of conductive connection portions for electrically connecting the flip chip type mounting component and the wiring board;
An electronic component in which a gap between the wiring board and the flip chip type mounting component is sealed with a sealing resin at a peripheral portion of the flip chip type mounting component,
The conductive connection portion has a columnar shape and includes two connection surfaces connected to the flip chip type mounting component and the wiring board.
The plurality of conductive connection portions are arranged at predetermined intervals along a peripheral edge portion of the functional surface of the flip chip type mounting component, and
An electronic component, wherein an interval between the conductive connection portions adjacent to each other is smaller than a dimension of the conductive connection portion in a direction along a peripheral edge portion of the functional surface of the flip chip type mounting component. - 前記導電性接続部は、前記フリップチップ型実装部品の前記機能面の周縁部に沿う方向の寸法が、前記２つの接続面間の寸法、および、前記機能面の周縁部から前記機能面の内側に向かう方向の寸法よりも大きいことを特徴とする請求項１記載の電子部品。 The conductive connecting portion has a dimension in a direction along a peripheral portion of the functional surface of the flip chip type mounting component, a size between the two connecting surfaces, and an inner side of the functional surface from the peripheral portion of the functional surface. The electronic component according to claim 1, wherein the electronic component is larger than a dimension in a direction toward the surface.
- 互いに隣り合う前記導電性接続部の間隔が、前記２つの接続面間の寸法よりも小さいことを特徴とする請求項１または２記載の電子部品。 3. The electronic component according to claim 1, wherein an interval between the conductive connection portions adjacent to each other is smaller than a dimension between the two connection surfaces.
- 前記導電性接続部が、２２０℃以下では溶融しないものであることを特徴とする請求項１～３のいずれかに記載の電子部品。 4. The electronic component according to claim 1, wherein the conductive connection portion does not melt at 220 ° C. or lower.
- 前記導電性接続部が、合金を含むものであることを特徴とする請求項４記載の電子部品。 The electronic component according to claim 4, wherein the conductive connection portion includes an alloy.
- 前記合金が、ＳｎＣｕ、ＡｕＳｎ、ＢｉＡｇ、ＳｎＳｂ、ＰｂＳｎ、ＳｎＡｇからなる群より選ばれる少なくとも１種を含むものであることを特徴とする請求項５記載の電子部品。 6. The electronic component according to claim 5, wherein the alloy includes at least one selected from the group consisting of SnCu, AuSn, BiAg, SnSb, PbSn, and SnAg.
- 前記合金が、ＳｎＣｕＮｉ、ＳｎＣｕＭｎ、ＳｎＣｕＡｌ、ＳｎＣｕＣｒ、ＳｎＣｕＧｅからなる群より選ばれる少なくとも１種を含むものであることを特徴とする請求項５記載の電子部品。 6. The electronic component according to claim 5, wherein the alloy includes at least one selected from the group consisting of SnCuNi, SnCuMn, SnCuAl, SnCuCr, and SnCuGe.
- 前記封止樹脂は、シート状の樹脂材料を用いて形成したものであることを特徴とする請求項１～７のいずれかに記載の電子部品。 The electronic component according to any one of claims 1 to 7, wherein the sealing resin is formed using a sheet-like resin material.
- 機能素子を備えた機能面を有するフリップチップ型実装部品を準備する工程と、
前記フリップチップ型実装部品が実装される配線基板を準備する工程と、
複数の導電性接続部を、前記フリップチップ型実装部品の前記機能面の周縁部に沿って、前記導電性接続部の、前記機能面の周縁部に沿う方向の寸法よりも小さい間隔をおいて配置する工程と、
リフロー加熱することにより、前記配線基板が備える電極と前記フリップチップ型実装部品が備える電極とを、前記導電性接続部を介して電気的に接続する工程と、
前記フリップチップ型実装部品の周縁部における、前記配線基板と前記フリップチップ型実装部品との隙間を封止樹脂により封止する工程と
を具備することを特徴とする電子部品の製造方法。 Preparing a flip chip type mounting component having a functional surface with functional elements;
Preparing a wiring board on which the flip-chip mounting component is mounted;
A plurality of conductive connection portions are spaced along the peripheral edge portion of the functional surface of the flip-chip mounting component at a distance smaller than the dimension of the conductive connection portion along the peripheral edge portion of the functional surface. Arranging, and
Reflow heating to electrically connect the electrode included in the wiring board and the electrode included in the flip-chip mounting component via the conductive connection portion;
And a step of sealing a gap between the wiring board and the flip chip type mounting component at a peripheral edge of the flip chip type mounting component with a sealing resin. - 前記導電性接続部に、前記フリップチップ型実装部品または前記配線基板の少なくとも一方の、前記導電性接続部が接続される電極を構成する金属材料よりも融点の低い金属材料を用い、
前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極の少なくとも一方に、前記導電性接続部を構成する金属材料よりも融点の高い金属材料を用いること
を特徴とする請求項９記載の電子部品の製造方法。 A metal material having a melting point lower than that of the metal material constituting the electrode to which the conductive connection part is connected to at least one of the flip chip type mounting component or the wiring board is used for the conductive connection part,
The metal material having a melting point higher than that of the metal material constituting the conductive connection portion is used for at least one of the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board. Manufacturing method of electronic components. - 前記導電性接続部を構成する、前記導電性接続部が接続される電極を構成する金属材料よりも融点の低い金属材料として、ＳｎＡｇを含む材料を用い、
前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極を構成する、前記導電性接続部を構成する金属材料よりも融点の高い金属材料として、Ｃｕ、ＣｕＮｉ、ＣｕＭｎ、ＣｕＡｌ、ＣｕＣｒ、ＣｕＧｅからなる群より選ばれる少なくとも１種を含む材料を用いること
を特徴とする請求項１０記載の電子部品の製造方法。 Using a material containing SnAg as a metal material having a lower melting point than the metal material constituting the electrode to which the conductive connection portion is connected, which constitutes the conductive connection portion,
As a metal material having a melting point higher than that of the metal material constituting the conductive connection portion, which constitutes the electrode provided in the flip chip mounting component or the electrode provided in the wiring board, Cu, CuNi, CuMn, CuAl, CuCr, CuGe The method for manufacturing an electronic component according to claim 10, wherein a material containing at least one selected from the group consisting of: - 前記導電性接続部に、前記フリップチップ型実装部品または前記配線基板の少なくとも一方の、前記導電性接続部が接続される電極を構成する材料よりも融点の高い金属材料を用い、
前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極の少なくとも一方に、前記導電性接続部を構成する金属材料よりも融点の低い金属材料を用いること
を特徴とする請求項９記載の電子部品の製造方法。 For the conductive connection part, using a metal material having a melting point higher than the material constituting the electrode to which the conductive connection part is connected, of at least one of the flip-chip mounting component or the wiring board,
The metal material having a melting point lower than that of the metal material constituting the conductive connection portion is used for at least one of the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board. Manufacturing method of electronic components. - 前記導電性接続部を構成する、前記導電性接続部が接続される電極を構成する金属材料よりも融点の高い金属材料として、Ｃｕ、ＣｕＮｉ、ＣｕＭｎ、ＣｕＡｌ、ＣｕＣｒ、ＣｕＧｅからなる群より選ばれる少なくとも１種を含む材料を用い、
前記フリップチップ型実装部品が備える電極または前記配線基板が備える電極を構成する、前記導電性接続部を構成する金属材料よりも融点の低い金属材料として、ＳｎＡｇを含む材料を用いること
を特徴とする請求項１２記載の電子部品の製造方法。 The metal material having a melting point higher than that of the metal material constituting the conductive connection portion and the electrode to which the conductive connection portion is connected is selected from the group consisting of Cu, CuNi, CuMn, CuAl, CuCr, and CuGe. Using a material containing at least one species,
A material containing SnAg is used as a metal material having a melting point lower than that of the metal material constituting the conductive connection portion, which constitutes the electrode provided in the flip chip type mounting component or the electrode provided in the wiring board. The manufacturing method of the electronic component of Claim 12.
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