JP3847216B2 - Wiring board - Google Patents

Wiring board Download PDF

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Publication number
JP3847216B2
JP3847216B2 JP2002171908A JP2002171908A JP3847216B2 JP 3847216 B2 JP3847216 B2 JP 3847216B2 JP 2002171908 A JP2002171908 A JP 2002171908A JP 2002171908 A JP2002171908 A JP 2002171908A JP 3847216 B2 JP3847216 B2 JP 3847216B2
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JP
Japan
Prior art keywords
connection pad
insulating base
wiring
metal layer
frame
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Expired - Fee Related
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JP2002171908A
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Japanese (ja)
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JP2004022605A (en
Inventor
高志 山崎
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体素子や圧電振動子等の電子部品を搭載するための配線基板に関するものである。
【0002】
【従来の技術】
従来、半導体素子や圧電振動子等の電子部品を搭載するための配線基板は、一般に、略四角板状のセラミックス材料から成り、上面に電子部品搭載部を有する絶縁基体と、該絶縁基体の電子部品搭載部より絶縁基体内部を介して側面に導出されている複数個の配線層と、前記絶縁基体の上面で、前記電子部品搭載部を取り囲むように形成されている枠状の金属層と、前記絶縁基体の下面外周部に形成されている複数個の接続パッドと、前記絶縁基体の側面に形成され、各配線層と各接続パッドとを電気的に接続する複数個のキャスタレーション導体とにより構成されており、絶縁基体の電子部品搭載部に電子部品を搭載するとともに、電子部品の信号用、接地用等の各電極を各配線層にボンディングワイヤ等の導電性接続部材を介して電気的に接続し、しかる後、絶縁基体上面の枠状金属層に電子部品を覆うようにして鉄−ニッケル−コバルト合金や鉄−ニッケル合金等から成る金属製の蓋体をロウ材等を介して接合し電子部品を封止することによって電子装置となる。
【0003】
かかる電子装置は、絶縁基体下面の外周部に形成した接続パッドを外部電気回路基板の配線導体に錫−鉛半田等の半田を介して接続することによって外部電気回路基板に実装され、同時に電子部品の各電極は配線層とキャスタレーション導体と接続パッドとを介して外部電気回路に電気的に接続されることとなる。
【0004】
なお、前記キャスタレーション導体のうち、少なくとも電子部品の接地用の電極が接続されるもの(通常、全接続パッド中約20〜50%)は、一部が絶縁基体上面に形成されている枠状の金属層まで導出されており、枠状金属層を接地できるようになっている。
【0005】
また前記各キャスタレーション導体は絶縁基体の側面に垂直方向に形成されており、枠状金属層と接続されるキャスタレーション導体は絶縁基体の側面で下面部から上面部にかけて形成されている。
【0006】
【発明が解決しようとする課題】
しかしながら、近時、各種電子装置は環境、人体に対する悪影響を防止するため従来使用されている錫−鉛半田に代わり、錫−銀−ビスマス系、錫−銀−銅−ビスマス系等の鉛を含有しない、いわゆる鉛フリー半田を用いて外部電気回路基板に接続されるようになってきており、かかる鉛フリー半田は、従来の錫−鉛半田に比べて溶融時に流れやすいため電子装置を外部電気回路基板に実装するとき、半田がキャスタレーション導体を伝って絶縁基体上面の枠状金属層や枠状金属層に取着されている金属製蓋体にまで這い上がり、その結果、絶縁基体の接続パッドと、外部電気回路の配線導体との間に介在する半田の量が極めて少量となり、電子装置を外部回路基板に強固に実装することができないという欠点を有していた。
【0007】
また錫−銀−ビスマス系等の鉛フリー半田は、従来の錫−鉛半田に比べて、ビスマス等の成分の偏析により接続パッド等に対する接合強度が低くなりやすいこと、配線基板の小型化により接続パッドも小さくなり、半田接合の面積が小さくなってきていること等から、外部電気回路基板の配線導体に電子装置の接続パッドを錫−銀−ビスマス系等の鉛フリー半田を介して接続し外部電気回路基板に電子装置を実装させた後、電子装置と外部電気回路基板に熱が作用すると電子装置の絶縁基体と外部電気回路基板との間に両者の熱膨張係数の相違に起因する熱応力が発生するとともにこれが鉛フリー半田および鉛フリー半田と接続パッドとの接合界面に作用し、その結果、特に熱応力が集中する接続パッドの外周付近から、鉛フリー半田と接続パッドとの接合界面に亀裂等の機械的な破壊を招来させて電子装置の外部電気回路基板に対する接続信頼性を低いものにしてしまうという欠点も有していた。
【0008】
本発明は、上記欠点に鑑み案出されたものであり、その目的は、接続パッドを外部電気回路基板の配線導体に鉛フリー半田を介して強固に接合し、それにより外部電気回路基板に強固にかつ高信頼性で実装することが可能な配線基板を提供することにある。
【0009】
【課題を解決するための手段】
本発明の配線基板は、上面に電子部品搭載部および該搭載部を取り囲む枠状の金属層を有し、下面の外周部に接続パッドを有する絶縁基体と、前記絶縁基体の側面に形成され、前記接続パッドと枠状の金属層とを接続するキャスタレーション導体とを具備する配線基板であって、前記キャスタレーション導体は接続パッドから導出する第1領域と、枠状の金属層から導出する第2領域とから成り、前記第1領域と第2領域は絶縁基体側面の幅方向に位置がずれているとともに前記絶縁基体内部に形成された内部配線層を介して接続されており、かつ前記接続パッドは、外辺が波形をなすことを特徴とするものである。
【0010】
本発明の配線基板によれば、絶縁基体上面に形成されている枠状金属層と絶縁基体下面に形成されている接続パッドとを電気的に接続するキャスタレーション導体を、接続パッドから導出する第1領域と、金属層から導出する第2領域とにより構成するとともに、前記第1領域と第2領域を絶縁基体側面の幅方向に位置をずらせたことから接続パッドと外部電気回路の配線導体とを鉛フリー半田を用いて接合したとしても、鉛フリー半田がキャスタレーション導体を伝って枠状金属層や金属製蓋体にまで這い上がることはなく、その結果、接続パッドと外部電気回路基板の配線導体との間に十分な量の半田を介在させることができ、配線基板(電子装置)を外部電気回路基板に極めて強固に接合することができる。
【0011】
また同時に、本発明の配線基板によれば、接続パッドを、外辺が波形をなすものとしたことから、絶縁基体と外部電気回路基板との間に両者の熱膨張係数の相違に起因する熱応力が発生するとともにこれが鉛フリー半田および鉛フリー半田と接続パッドとの接合界面付近、特に接合界面の外縁部に集中して作用したとしても、その熱応力は波形の接合界面外縁に沿って分散されて小さなものとなり、鉛フリー半田の接続パッドとの接合界面に沿って亀裂等が発生することを効果的に防止することができ、配線基板(電子装置)を外部電気回路基板により一層強固に接合させることができる。
【0012】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
【0013】
図1(a)乃至(c)は、本発明の配線基板を半導体素子を収容する半導体素子収納用パッケージに適用した場合の一実施例を示し、1は絶縁基体、2は配線層、3は枠状金属層、4は接続パッド、5はキャスタレーション導体である。この絶縁基体1、配線層2、枠状金属層3、接続パッド4及びキャスタレーション導体5により半導体素子6を搭載するための配線基板7が形成される。
【0014】
前記絶縁基体1は、酸化アルミニウム質焼結体、窒化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミック焼結体等の電気絶縁材料から成り、その上面に半導体素子6を搭載する搭載部を有し、該搭載部に半導体素子6がガラス、樹脂、ロウ材等の接着材を介して接着固定される。
【0015】
前記絶縁基体1は、例えば、酸化アルミニウム質焼結体から成る場合には、酸化アルミニウム、酸化珪素、酸化カルシウム、酸化マグネシウム等の原料粉末に適当な有機バインダー、溶剤を添加混合して泥漿状のセラミックスラリーとなし、次に前記セラミックスラリーを従来周知のドクターブレード法やカレンダーロール法等のシート成形技術によりシート状となして所定形状のセラミックグリーンシート(セラミック生シート)を得る、最後に前記セラミックグリーンシートを複数枚積層するとともに還元雰囲気中、約1600℃の温度で焼成することによって製作される。
【0016】
また前記絶縁基体1はその上面の半導体素子6が搭載される搭載部周囲から絶縁基体1の内部を介し側面にかけて複数個の配線層2が形成されており、該配線層2は半導体素子6の信号用、接地用の各電極を接続パッド4に接続するための導電路として作用し、搭載部側の一端には半導体素子6の信号用、接地用等の電極がボンディングワイヤ8を介して電気的に接続される。
【0017】
前記配線層2はタングステン、モリブデン、マンガン、銅、銀、金、パラジウム等の金属粉末から成り、タングステン等の金属粉末に適当な有機バインダーや溶剤を添加混合して得た金属ペーストを絶縁基体1となるセラミックグリーンシートに予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておくことによって絶縁基体1の上面から絶縁基体1の内部を介し側面にかけて被着形成される。
【0018】
また前記絶縁基体1はその上面で、半導体素子6が搭載される搭載部を取り囲むようにして枠状の金属層3が被着されており、該枠状の金属層3は後述する金属製蓋体9を絶縁基体1に取着させる際の下地金属層として作用し、タングステン、モリブデン、マンガン、銅、銀、金、パラジウム等の金属粉末により形成されている。
【0019】
前記枠状金属層3には金属製蓋体9がロウ材を介してロウ付け取着され、これによって絶縁基体1の半導体素子搭載部に搭載されている半導体素子6は大気から気密に封止されることとなる。
【0020】
なお、前記枠状金属層3は前述の配線層2と同様の方法によって絶縁基体1の上面で、半導体素子搭載部を取り囲むように形成される。
【0021】
更に前記絶縁基体1の下面外周部には複数個の接続パッド4が形成されており、該接続パッド4は外部電気回路基板の配線導体に鉛フリー半田を介して接続され、半導体素子6の信号用、接地用の各電極を外部電気回路に電気的に接続する作用をなす。
【0022】
前記接続パッド4は、タングステン、モリブデン、マンガン、銅、銀、金、パラジウム等の金属粉末より成り、前述の配線層2と同様の方法によって絶縁基体1の下面外周部に所定形状に形成される。
【0023】
また更に前記絶縁基体1はその側面に複数個のキャスタレーション導体5(絶縁基体1の側面に断面半円状の凹部を設け、該凹部内に形成されている導体)が被着されており、該キャスタレーション導体5は配線層2と接続パッド4とを電気的に接続する作用をなす。
【0024】
前記キャスタレーション導体5はタングステン、モリブデン、マンガン、銅、銀、金、パラジウム等の金属粉末より成り、絶縁基体1となるセラミックグリーンシートの側面に打ち抜き加工法により半円形の凹部を形成するとともに該凹部内にタングステン等の金属粉末に適当な有機バインダーや溶剤を添加混合して得た金属ペーストを予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておくことによって絶縁基体1の側面に所定形状に形成される。
【0025】
前記キャスタレーション導体5はまた半導体素子6の接地用の電極と導通する配線層2に接続されるものについては一部が絶縁基体1上面の枠状金属層3にまで導出されており、枠状金属層3を接地するようになっている。
【0026】
なお、前記配線層2、枠状の金属層3、接続パッド4及びキャスタレーション導体5は、その露出する表面に、ニッケル、金等の耐蝕性やボンディングワイヤ8のボンディング性、半田の濡れ性等が良好な金属から成るめっき層を被着させておくと配線層2や枠状の金属層3等の酸化腐食を有効に防止することができるとともに枠状金属層3への金属製蓋体9の取着、接続パッド4の外部電気回路基板への接続が確実、強固となる。従って、前記配線層2、枠状金属層3、接続パッド4及びキャスタレーション導体5は、その露出する表面に、ニッケル、金等の耐蝕性やボンディング性、半田の濡れ性等が良好な金属をめっき法により被着させておくことが好ましく、特に、例えば、厚さ1〜10μmのニッケルめっき層、0.05〜3μmの厚さの金めっき層を順次被着させておくことが好ましい。
【0027】
この場合、金めっき層の厚みは、被着する部位や金めっき層の結晶配向等に応じて異なる厚みとしてもよく、例えば、金めっき層のX線回折における結晶配向を極力(111)面に揃えるようにするとともに、ボンディングワイヤ8が接続される領域も含め、全域で約0.3〜1μmとするようにしてもよく、半田付け用の領域のみ約0.3μm以下の薄いものとし、錫−金の脆い金属間化合物の生成を抑えて半田付けの信頼性をより一層高めるようにしてもよい。
【0028】
かくして本発明の配線基板7によれば、絶縁基体1上面の搭載部に半導体素子6を搭載するとともに半導体素子6の信号用、接地用の各電極を配線層2にボンディングワイヤ8を介して接続し、しかる後、絶縁基体1上面の枠状金属層3に鉄−ニッケル−コバルト合金や鉄−ニッケル合金等からなる金属製蓋体9をロウ材等を介して接合させ、金属製蓋体9で半導体素子6を気密に封止することによって製品としての電子装置(半導体装置)が完成する。
【0029】
なお、この半導体装置は絶縁基体1下面外周部の接続パッド4を外部電気回路基板の配線導体に鉛フリー半田を介して接合することによって外部電気回路基板上に実装され、同時に半導体素子6の信号用、接地用の各電極が外部電気回路基板の配線導体に電気的に接続される。
【0030】
本発明の配線基板7においてはキャスタレーション導体5のうち枠状金属層3と接続パッド4とを接続しているキャスタレーション導体5aを図2に示すように接続パッド4から導出する第1領域5bと、枠状の金属層3から導出する第2領域5cとに分け、第1領域5bと第2領域5cとを絶縁基体1側面の幅方向に位置をずらせておくとともに絶縁基体1内部で内部配線層10を介して電気的に接続しておくことが重要である。
【0031】
前記枠状金属層3と接続パッド4とを接続しているキャスタレーション導体5aを接続パッド4から導出する第1領域5bと、枠状金属層3から導出する第2領域5cとに分け、各々を絶縁基体1側面の幅方向に位置をずらせておくと接続パッド4と外部電気回路の配線導体とを鉛フリー半田を用いて接合したとしても、鉛フリー半田がキャスタレーション導体5aを伝って枠状金属層3や金属製蓋体9にまで這い上がることはなく、その結果、接続パッド4と外部電気回路基板の配線導体との間に十分な量の半田を介在させることができ、配線基板(電子装置)を外部電気回路基板に極めて強固に接合することができる。
【0032】
前記枠状金属層3と接続パッド4とを接続しているキャスタレーション導体5aの第1領域5bと第2領域5cとの分割位置は、使用する半田の種類や、絶縁基体1の厚さ、配線層2の設計上の都合等に応じて適宜決めるようにすればよく、例えば、キャスタレーション導体5aが直径0.3mm〜0.7mmの半円状で、半田として錫−銀系半田を用いる場合であれば、第1領域5bの長さを0.3mm〜1mmの範囲とすればよい。
【0033】
また、本発明の配線基板7においては、図3に示すように、前記接続パッド4の外辺を波形としておくことが重要である。
【0034】
前記接続パッド4の外辺を波形としておくと、配線基板7と外部電気回路基板に熱が作用し、両者間に両者の熱膨張係数の相違に起因する熱応力が発生するとともにこれが両者を接合している鉛フリー半田、特に接続パッド4との接合界面の外縁部に集中して作用したとしても、この熱応力は波形の接合界面外縁に沿って分散されて小さなものとなり、その結果、鉛フリー半田と接続パッド4との接合界面に亀裂等の機械的な破壊が発生することはほとんどなく、接続パッド4を外部電気回路基板の配線導体により一層強固に、かつ高信頼性で接続することができる。
【0035】
なお、前記接続パッド4は、隣接する接続パッド4の外辺間の距離が50μm未満になると、隣接する接続パッド4間の電気絶縁性が低下し、絶縁不良や電気的短絡等の不具合を発生させるおそれがある。したがって、前記接続パッド4は、隣接する接続パッド4の外辺間の距離が50μm以上となるようにしておくことが好ましい。
【0036】
また前記接続パッド4は、接続パッド4と鉛フリー半田との接合強度を確保するため、外辺の波底部の位置を接続パッド4の幅の1/3以下の位置としておくことが好ましい。
【0037】
更に、前記接続パッド4はその外辺の波形の部分が図4に示すような円弧状に限らず、楕円円弧状等としてもよい。
【0038】
また更に、前記キャスタレーション導体5aの接続パッド4から導出する第1領域5bは、図6に示すように、その内側に突出する突出部11を形成しておけば接続パッド4を外部電気回路基板の配線導体に半田を介して接合するとき、前記突出部11が半田の中に食い込むようにして接合されて接合強度がより一層強固となる。従って、前記キャスタレーション導体5aの接続パッド4から導出する第1領域5bは、図6に示すように、その内側に突出する突出部11を形成しておくことが好ましい。
【0039】
なお、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば、上述の実施例では本発明の配線基板を半導体素子を収容する半導体素子収納用パッケージに適用したが、混成集積回路基板等の他の用途に適用してもよい。
【0040】
【発明の効果】
本発明の配線基板によれば、絶縁基体上面に形成されている枠状金属層と絶縁基体下面に形成されている接続パッドとを電気的に接続するキャスタレーション導体を、接続パッドから導出する第1領域と、金属層から導出する第2領域とにより構成するとともに、前記第1領域と第2領域を絶縁基体側面の幅方向に位置をずらせたことから接続パッドと外部電気回路の配線導体とを鉛フリー半田を用いて接合したとしても、鉛フリー半田がキャスタレーション導体を伝って枠状金属層や金属製蓋体にまで這い上がることはなく、その結果、接続パッドと外部電気回路基板の配線導体との間に十分な量の半田を介在させることができ、配線基板(電子装置)を外部電気回路基板に極めて強固に接合することができる。
【0041】
また同時に、本発明の配線基板によれば、接続パッドを、外辺が波形をなすものとしたことから、絶縁基体と外部電気回路基板との間に両者の熱膨張係数の相違に起因する熱応力が発生するとともにこれが鉛フリー半田および鉛フリー半田と接続パッドとの接合界面付近、特に接合界面の外縁部に集中して作用したとしても、その熱応力は波形の接合界面外縁に沿って分散されて小さなものとなり、鉛フリー半田の接続パッドとの接合界面に沿って亀裂等が発生することを効果的に防止することができ、配線基板(電子装置)を外部電気回路基板により一層強固に接合させることができる。
【図面の簡単な説明】
【図1】(a)(b)(c)は本発明の配線基板の一実施例を示す側面図、平面図、底面図である。
【図2】本発明の配線基板の要部拡大斜視図である。
【図3】本発明の配線基板の要部拡大底面図である。
【図4】本発明の配線基板の他の実施例の要部拡大図である。
【符号の説明】
1・・・・・絶縁基体
2・・・・・配線層
3・・・・・枠状の金属層
4・・・・・接続パッド
5・・・・・キャスタレーション導体
5a・・・・接続パッドと枠状金属層とを接続しているキャスタレーション導体
5b・・・・第1領域
5c・・・・第2領域
6・・・・・半導体素子
7・・・・・配線基板
8・・・・・ボンディングワイヤ
9・・・・・蓋体
10・・・・内部配線層
11・・・・突出部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wiring board for mounting electronic components such as semiconductor elements and piezoelectric vibrators.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, wiring boards for mounting electronic components such as semiconductor elements and piezoelectric vibrators are generally made of a substantially square plate-like ceramic material and have an electronic component mounting portion on the upper surface, and the electronic of the insulating substrate. A plurality of wiring layers led out from the component mounting portion to the side surface through the inside of the insulating base, and a frame-shaped metal layer formed on the upper surface of the insulating base so as to surround the electronic component mounting portion; A plurality of connection pads formed on the outer peripheral portion of the lower surface of the insulating base, and a plurality of castellation conductors formed on the side surface of the insulating base and electrically connecting each wiring layer and each connection pad. The electronic component is mounted on the electronic component mounting portion of the insulating base, and each electrode for signal and grounding of the electronic component is electrically connected to each wiring layer via a conductive connecting member such as a bonding wire. After that, a metal lid made of iron-nickel-cobalt alloy or iron-nickel alloy is joined to the frame-like metal layer on the upper surface of the insulating base with a brazing material or the like so as to cover the electronic component. By sealing the electronic component, an electronic device is obtained.
[0003]
Such an electronic device is mounted on an external electric circuit board by connecting a connection pad formed on the outer peripheral portion of the lower surface of the insulating base to a wiring conductor of the external electric circuit board via solder such as tin-lead solder, and at the same time an electronic component These electrodes are electrically connected to an external electric circuit through the wiring layer, the castellation conductor and the connection pad.
[0004]
Among the castellation conductors, at least a grounding electrode of an electronic component is connected (usually about 20 to 50% of all connection pads), a part of which is formed on the upper surface of the insulating base. The metal layer is led out so that the frame-like metal layer can be grounded.
[0005]
Each of the castellation conductors is formed in a direction perpendicular to the side surface of the insulating base, and the castellation conductor connected to the frame-like metal layer is formed from the bottom surface to the top surface on the side surface of the insulating base.
[0006]
[Problems to be solved by the invention]
However, recently, various electronic devices contain lead such as tin-silver-bismuth, tin-silver-copper-bismuth, etc. in place of tin-lead solder which is conventionally used to prevent adverse effects on the environment and human body. The so-called lead-free solder is used to connect to an external electric circuit board, and such a lead-free solder is easier to flow at the time of melting than a conventional tin-lead solder. When mounting on the board, the solder crawls up to the frame-like metal layer on the upper surface of the insulating base or the metal lid attached to the frame-like metal layer through the castellation conductor, and as a result, the connection pad of the insulating base. In addition, the amount of solder interposed between the wiring conductors of the external electric circuit is extremely small, and the electronic device cannot be firmly mounted on the external circuit board.
[0007]
In addition, lead-free solders such as tin-silver-bismuth-based solders tend to have low bonding strength to connection pads due to segregation of components such as bismuth, compared to conventional tin-lead solders. Since the pads are also becoming smaller and the solder joint area is becoming smaller, etc., the connection pads of the electronic device are connected to the wiring conductors of the external electric circuit board via lead-free solder such as tin-silver-bismuth. After mounting the electronic device on the electric circuit board, if heat acts on the electronic device and the external electric circuit board, the thermal stress caused by the difference in thermal expansion coefficient between the insulating base of the electronic device and the external electric circuit board As a result, it acts on the lead-free solder and the joint interface between the lead-free solder and the connection pad. Disadvantage in those low connection reliability bonding interface to lead to mechanical breakdown of the crack or the like to an external electric circuit board of the electronic device with the head also had.
[0008]
The present invention has been devised in view of the above disadvantages, and its purpose is to firmly connect the connection pad to the wiring conductor of the external electric circuit board via lead-free solder, thereby firmly connecting to the external electric circuit board. Another object of the present invention is to provide a wiring board that can be mounted with high reliability.
[0009]
[Means for Solving the Problems]
The wiring board of the present invention has an electronic component mounting portion on the upper surface and a frame-shaped metal layer surrounding the mounting portion, an insulating base having a connection pad on the outer periphery of the lower surface, and formed on the side surface of the insulating base, A wiring board including a castellation conductor for connecting the connection pad and a frame-shaped metal layer, wherein the castellation conductor is a first region derived from the connection pad and a first region derived from the frame-shaped metal layer. The first region and the second region are displaced in the width direction of the side surface of the insulating base and are connected via an internal wiring layer formed inside the insulating base, and the connection The pad is characterized in that the outer side has a waveform.
[0010]
According to the wiring board of the present invention, the castellation conductor that electrically connects the frame-shaped metal layer formed on the upper surface of the insulating base and the connection pad formed on the lower surface of the insulating base is led out from the connection pad. 1 region and a second region derived from the metal layer, and since the first region and the second region are shifted in the width direction of the side surface of the insulating base, the connection pad and the wiring conductor of the external electric circuit Even if they are joined using lead-free solder, lead-free solder does not crawl up to the frame-like metal layer or metal lid through the castellation conductor. A sufficient amount of solder can be interposed between the wiring conductors and the wiring board (electronic device) can be bonded to the external electric circuit board very firmly.
[0011]
At the same time, according to the wiring board of the present invention, since the outer side of the connection pad has a waveform, the heat caused by the difference in thermal expansion coefficient between the insulating base and the external electric circuit board is caused. Even if stress is generated and this acts near the joint interface between lead-free solder and lead-free solder and connection pad, especially at the outer edge of the joint interface, the thermal stress is distributed along the outer edge of the corrugated joint interface. It is possible to effectively prevent cracks and the like from occurring along the joint interface with the lead-free solder connection pad, and to further strengthen the wiring board (electronic device) with the external electric circuit board. Can be joined.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
[0013]
FIGS. 1A to 1C show an embodiment in which the wiring board of the present invention is applied to a package for housing a semiconductor element for housing a semiconductor element, wherein 1 is an insulating substrate, 2 is a wiring layer, 3 is A frame-shaped metal layer, 4 is a connection pad, and 5 is a castellation conductor. The insulating substrate 1, the wiring layer 2, the frame-shaped metal layer 3, the connection pad 4 and the castellation conductor 5 form a wiring substrate 7 for mounting the semiconductor element 6.
[0014]
The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body, and a mounting portion on which a semiconductor element 6 is mounted. The semiconductor element 6 is bonded and fixed to the mounting portion via an adhesive such as glass, resin, or brazing material.
[0015]
When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide to form a mud-like shape. Next, the ceramic slurry is formed into a sheet shape by a sheet forming technique such as a conventionally known doctor blade method or calendar roll method to obtain a ceramic green sheet (ceramic raw sheet) having a predetermined shape. It is manufactured by laminating a plurality of green sheets and firing them at a temperature of about 1600 ° C. in a reducing atmosphere.
[0016]
The insulating base 1 is formed with a plurality of wiring layers 2 from the periphery of the mounting portion on which the semiconductor element 6 on the upper surface is mounted to the side surface through the inside of the insulating base 1. The signal and ground electrodes act as conductive paths for connecting to the connection pads 4, and the signal and ground electrodes of the semiconductor element 6 are electrically connected via bonding wires 8 at one end on the mounting portion side. Connected.
[0017]
The wiring layer 2 is made of a metal powder such as tungsten, molybdenum, manganese, copper, silver, gold, palladium, etc., and a metal paste obtained by adding and mixing an appropriate organic binder or solvent to the metal powder such as tungsten is used as the insulating substrate 1. The ceramic green sheet to be formed is preliminarily printed and applied in a predetermined pattern by a well-known screen printing method so that the ceramic green sheet is deposited from the upper surface of the insulating substrate 1 to the side surface through the inside of the insulating substrate 1.
[0018]
The insulating base 1 is covered with a frame-shaped metal layer 3 so as to surround the mounting portion on which the semiconductor element 6 is mounted on the upper surface of the insulating substrate 1, and the frame-shaped metal layer 3 is a metal lid described later. It acts as a base metal layer when the body 9 is attached to the insulating substrate 1, and is formed of metal powder such as tungsten, molybdenum, manganese, copper, silver, gold, palladium.
[0019]
A metal lid 9 is brazed and attached to the frame-shaped metal layer 3 via a brazing material, whereby the semiconductor element 6 mounted on the semiconductor element mounting portion of the insulating base 1 is hermetically sealed from the atmosphere. Will be.
[0020]
The frame-shaped metal layer 3 is formed on the upper surface of the insulating substrate 1 so as to surround the semiconductor element mounting portion by the same method as the wiring layer 2 described above.
[0021]
Further, a plurality of connection pads 4 are formed on the outer peripheral portion of the lower surface of the insulating base 1, and the connection pads 4 are connected to the wiring conductor of the external electric circuit board via lead-free solder, and the signal of the semiconductor element 6 Each electrode for grounding and grounding is electrically connected to an external electric circuit.
[0022]
The connection pad 4 is made of a metal powder such as tungsten, molybdenum, manganese, copper, silver, gold, or palladium, and is formed in a predetermined shape on the outer periphery of the lower surface of the insulating substrate 1 by the same method as that for the wiring layer 2 described above. .
[0023]
Furthermore, the insulating base 1 is coated with a plurality of castoration conductors 5 (conductors provided with a semicircular recess in the side face of the insulating base 1 and formed in the recess) on the side surface, The castellation conductor 5 serves to electrically connect the wiring layer 2 and the connection pad 4.
[0024]
The castellation conductor 5 is made of a metal powder such as tungsten, molybdenum, manganese, copper, silver, gold, palladium, etc., and a semicircular recess is formed on the side surface of the ceramic green sheet serving as the insulating substrate 1 by a punching method. A metal paste obtained by adding and mixing a suitable organic binder or solvent to a metal powder such as tungsten in the recess is preliminarily printed in a predetermined pattern by a well-known screen printing method, and then predetermined on the side surface of the insulating substrate 1. It is formed into a shape.
[0025]
A part of the castellation conductor 5 connected to the wiring layer 2 electrically connected to the grounding electrode of the semiconductor element 6 is led out to the frame-like metal layer 3 on the upper surface of the insulating base 1. The metal layer 3 is grounded.
[0026]
The wiring layer 2, the frame-shaped metal layer 3, the connection pad 4, and the castoration conductor 5 have corrosion resistance such as nickel and gold, bonding property of the bonding wire 8, solder wettability, etc. on the exposed surface. If a plating layer made of a good metal is applied, the oxidative corrosion of the wiring layer 2 and the frame-shaped metal layer 3 can be effectively prevented and the metal lid 9 on the frame-shaped metal layer 3 can be prevented. And the connection of the connection pad 4 to the external electric circuit board is ensured and strong. Therefore, the wiring layer 2, the frame-shaped metal layer 3, the connection pad 4, and the castellation conductor 5 are made of a metal having good corrosion resistance such as nickel and gold, bonding properties, solder wettability, etc. on the exposed surface. It is preferable to deposit by a plating method. In particular, it is preferable to sequentially deposit, for example, a nickel plating layer having a thickness of 1 to 10 μm and a gold plating layer having a thickness of 0.05 to 3 μm.
[0027]
In this case, the thickness of the gold plating layer may be different depending on the part to be deposited, the crystal orientation of the gold plating layer, etc. For example, the crystal orientation in the X-ray diffraction of the gold plating layer is as much as possible to the (111) plane. In addition, the entire region including the region to which the bonding wire 8 is connected may be about 0.3 to 1 μm, and only the region for soldering should be as thin as about 0.3 μm or less. -Generation | occurrence | production of the gold brittle intermetallic compound may be suppressed, and you may make it improve the reliability of soldering further.
[0028]
Thus, according to the wiring substrate 7 of the present invention, the semiconductor element 6 is mounted on the mounting portion on the upper surface of the insulating base 1 and the signal and ground electrodes of the semiconductor element 6 are connected to the wiring layer 2 via the bonding wires 8. Thereafter, a metal lid body 9 made of iron-nickel-cobalt alloy, iron-nickel alloy, or the like is joined to the frame-like metal layer 3 on the upper surface of the insulating base 1 via a brazing material or the like. Thus, the semiconductor device 6 is hermetically sealed to complete an electronic device (semiconductor device) as a product.
[0029]
The semiconductor device is mounted on the external electric circuit board by joining the connection pads 4 on the outer periphery of the lower surface of the insulating base 1 to the wiring conductor of the external electric circuit board via lead-free solder, and simultaneously the signal of the semiconductor element 6 The electrodes for grounding and grounding are electrically connected to the wiring conductor of the external electric circuit board.
[0030]
In the wiring board 7 of the present invention, the caster conductor 5a connecting the frame-like metal layer 3 and the connection pad 4 out of the caster conductor 5 is led out from the connection pad 4 as shown in FIG. And the second region 5c derived from the frame-shaped metal layer 3, and the first region 5b and the second region 5c are displaced in the width direction of the side surface of the insulating base 1 and are internally formed inside the insulating base 1. It is important to be electrically connected via the wiring layer 10.
[0031]
The castellation conductor 5a connecting the frame-shaped metal layer 3 and the connection pad 4 is divided into a first region 5b derived from the connection pad 4 and a second region 5c derived from the frame-shaped metal layer 3, Is shifted in the width direction of the side surface of the insulating base 1, even if the connection pad 4 and the wiring conductor of the external electric circuit are joined using lead-free solder, the lead-free solder is transmitted through the castellation conductor 5a. As a result, a sufficient amount of solder can be interposed between the connection pad 4 and the wiring conductor of the external electric circuit board. The (electronic device) can be bonded to the external electric circuit board very firmly.
[0032]
The dividing position of the first region 5b and the second region 5c of the castellation conductor 5a connecting the frame-shaped metal layer 3 and the connection pad 4 is the type of solder used, the thickness of the insulating substrate 1, What is necessary is just to determine suitably according to the design convenience etc. of the wiring layer 2, for example, the castellation conductor 5a is a semicircle shape with a diameter of 0.3 mm-0.7 mm, and uses a tin-silver type solder as a solder. In some cases, the length of the first region 5b may be in the range of 0.3 mm to 1 mm.
[0033]
In the wiring board 7 of the present invention, it is important that the outer side of the connection pad 4 has a waveform as shown in FIG.
[0034]
If the outer side of the connection pad 4 is corrugated, heat acts on the wiring board 7 and the external electric circuit board, and thermal stress is generated between the two due to the difference in thermal expansion coefficient between them. Even if it acts on the outer edge of the bonding interface with the lead-free solder, especially the connection pad 4, this thermal stress is distributed along the outer edge of the corrugated bonding interface and becomes small. There is almost no mechanical damage such as cracks at the joint interface between the free solder and the connection pad 4, and the connection pad 4 is connected to the wiring conductor of the external electric circuit board more firmly and with high reliability. Can do.
[0035]
In addition, when the distance between the outer sides of the adjacent connection pads 4 is less than 50 μm, the electrical insulation between the adjacent connection pads 4 is deteriorated, causing problems such as an insulation failure and an electrical short circuit. There is a risk of causing. Therefore, it is preferable that the connection pads 4 have a distance between the outer sides of the adjacent connection pads 4 of 50 μm or more.
[0036]
Further, it is preferable that the connection pad 4 has a wave bottom portion on the outer side at a position equal to or less than 1/3 of the width of the connection pad 4 in order to ensure the bonding strength between the connection pad 4 and lead-free solder.
[0037]
Further, the connection pad 4 is not limited to the arc shape as shown in FIG.
[0038]
Furthermore, the first region 5b led out from the connection pad 4 of the castellation conductor 5a has a protrusion 11 protruding inside as shown in FIG. 6, so that the connection pad 4 is connected to the external electric circuit board. When joining to the wiring conductor via solder, the protrusion 11 is joined so as to bite into the solder, and the joining strength is further strengthened. Therefore, it is preferable that the first region 5b led out from the connection pad 4 of the castellation conductor 5a is formed with a protruding portion 11 protruding inward as shown in FIG.
[0039]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-described embodiments, the wiring board of the present invention is a semiconductor. Although the present invention is applied to a package for housing a semiconductor element that houses elements, it may be applied to other uses such as a hybrid integrated circuit board.
[0040]
【The invention's effect】
According to the wiring board of the present invention, the castellation conductor that electrically connects the frame-shaped metal layer formed on the upper surface of the insulating base and the connection pad formed on the lower surface of the insulating base is led out from the connection pad. 1 region and a second region derived from the metal layer, and since the first region and the second region are shifted in the width direction of the side surface of the insulating base, the connection pad and the wiring conductor of the external electric circuit Even if they are joined using lead-free solder, lead-free solder does not crawl up to the frame-like metal layer or metal lid through the castellation conductor. A sufficient amount of solder can be interposed between the wiring conductors and the wiring board (electronic device) can be bonded to the external electric circuit board very firmly.
[0041]
At the same time, according to the wiring board of the present invention, since the outer side of the connection pad has a waveform, the heat caused by the difference in thermal expansion coefficient between the insulating base and the external electric circuit board is caused. Even if stress is generated and this acts near the joint interface between lead-free solder and lead-free solder and connection pad, especially at the outer edge of the joint interface, the thermal stress is distributed along the outer edge of the corrugated joint interface. It is possible to effectively prevent cracks and the like from occurring along the joint interface with the lead-free solder connection pad, and to further strengthen the wiring board (electronic device) with the external electric circuit board. Can be joined.
[Brief description of the drawings]
1A, 1B and 1C are a side view, a plan view and a bottom view showing an embodiment of a wiring board according to the present invention.
FIG. 2 is an enlarged perspective view of a main part of a wiring board according to the present invention.
FIG. 3 is an enlarged bottom view of the main part of the wiring board of the present invention.
FIG. 4 is an enlarged view of a main part of another embodiment of the wiring board of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 2 ... Wiring layer 3 ... Frame-shaped metal layer 4 ... Connection pad 5 ... Castoration conductor 5a ... Connection Castoration conductor 5b connecting the pad and the frame-like metal layer .... first region 5c .... second region 6 ... semiconductor element 7 ... wiring substrate 8 .... ... Bonding wire 9 ... Lid 10 ... Internal wiring layer 11 ... Projection

Claims (1)

上面に電子部品搭載部および該搭載部を取り囲む枠状の金属層を有し、下面の外周部に接続パッドを有する絶縁基体と、前記絶縁基体の側面に形成され、前記接続パッドと枠状の金属層とを接続するキャスタレーション導体とを具備する配線基板であって、前記キャスタレーション導体は接続パッドから導出する第1領域と、枠状の金属層から導出する第2領域とから成り、前記第1領域と第2領域は絶縁基体側面の幅方向に位置がずれているとともに前記絶縁基体内部に形成された内部配線層を介して接続されており、かつ前記接続パッドは、外辺が波形をなすことを特徴とする配線基板。An insulating base having an electronic component mounting portion on the upper surface and a frame-shaped metal layer surrounding the mounting portion, and having a connection pad on the outer peripheral portion of the lower surface; formed on the side surface of the insulating base; A wiring board comprising a castellation conductor for connecting to a metal layer, wherein the castellation conductor comprises a first region derived from a connection pad and a second region derived from a frame-shaped metal layer, The first region and the second region are displaced in the width direction of the side surface of the insulating base and are connected via an internal wiring layer formed inside the insulating base, and the connection pad has a corrugated outer side. A wiring board characterized by:
JP2002171908A 2002-06-12 2002-06-12 Wiring board Expired - Fee Related JP3847216B2 (en)

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JP2020123804A (en) 2019-01-30 2020-08-13 セイコーエプソン株式会社 Oscillator, manufacturing method of the same, electronic device, and movable body

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