WO2012110157A1 - Procédé de fabrication d'une cellule solaire - Google Patents

Procédé de fabrication d'une cellule solaire Download PDF

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Publication number
WO2012110157A1
WO2012110157A1 PCT/EP2011/074164 EP2011074164W WO2012110157A1 WO 2012110157 A1 WO2012110157 A1 WO 2012110157A1 EP 2011074164 W EP2011074164 W EP 2011074164W WO 2012110157 A1 WO2012110157 A1 WO 2012110157A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
layer
semiconductor layer
conductive
solar cell
Prior art date
Application number
PCT/EP2011/074164
Other languages
German (de)
English (en)
Inventor
Andre Hedler
Stelio Correia
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2012110157A1 publication Critical patent/WO2012110157A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a solar cell, in particular a thin-film solar cell.
  • Solar energy is a renewable, natural and widely available source of energy, the use of which has increased dramatically in recent years.
  • the photovoltaic (PV) energy conversion takes place with the help of solar cells, which are connected to so-called solar modules, in photovoltaic systems.
  • the generated electricity can either be used locally, stored in accumulators or fed into electricity grids.
  • Photovoltaic systems find their use in various ways, such. B. on building roofs, as facades or as outdoor facilities.
  • the continuous development of photovoltaic systems has enabled in recent years that thin-film modules or solar cells, which until recently were still a niche market, are now being used more and more, also in solar parks of the megawatt class.
  • thin-film solar cells the semiconductor materials required for energy conversion are applied in extremely thin layers with special manufacturing processes directly onto a carrier material (substrate) made of glass, plastic or metal foil.
  • a carrier material substrate
  • thin film solar cells are deposited in very thin superimposed layers.
  • standard solar cells crystalline wafer solar cells
  • the thin-film solar cells show significant advantages.
  • thin-film technology requires less material. While, for example, the active zone for the energy conversion of a thin-film solar cell between 1 ⁇ and 10 ⁇ thick, however, is the thickness of an active zone of a standard solar cell between 100 and 300 ⁇ .
  • thin-film solar cells can be produced in a large-scale process, which corresponds to a fully automated, continuous production process.
  • the solar cells are classified as silicon cell type (amorphous or microcrystalline silicon), cadmium telluride cell type, copper indium gallium selenium cell type or Grätzel cell type.
  • layers can take place with the aid of surface-engineering methods, such as, for example, physical or chemical vapor deposition, high-vacuum vapor deposition or electrochemical deposition.
  • these deposition processes enable a simple transfer of the manufacturing process from the laboratory to the large-scale plant. Therefore, the process for producing a laboratory solar cell with a size of about 2.5 cm 2 can also be used for the production of a PV module with a size of about 110 cm x 130 cm.
  • thin film devices can be fabricated "in one piece" depositing the required materials layer by layer.
  • the thin film materials are deposited on a support and consist essentially of three major layers: a thin transparent conductive oxide (TCO) , transparent conductive oxide), which serves as a front contact, a semiconductor layer, which serves as a pn junction zone, and a conductive layer, eg., Metal, which serves as backside contact.
  • TCO transparent conductive oxide
  • a conductive layer eg., Metal
  • the module must be divided into a plurality of cells connected in series.
  • a laser is used, which is the most precise tool for structuring thin films. represents layer solar cells.
  • laser steps alternated-making steps with deposition to a complete thin-film module herzustel ⁇ len.
  • the process of laser patterning is based fundamentally on the laserindu ⁇ ed removal.
  • the laser generates micrometer-thin isolation channels for optimal use of the substrate surface while avoiding damage to the underlying layer. This results in a high efficiency of the solar modules.
  • 1 shows a schematic representation of a cross section of a thin film solar module ⁇ 10 with two adjacent solar cell Si, S2.
  • the module 10 comprises a transparent carrier 11, a transparent conductive layer (front contact) 12 arranged on the carrier 11, a first semiconductor layer 13 arranged on the transparent conductive layer 12, a conductive intermediate layer 14 arranged on the first semiconductor layer 13, one on the conductive one Intermediate layer 14 arranged second semiconductor layer 15 and a disposed on the second semiconductor layer 15 conductive layer 16 (back contact) on.
  • the conductive intermediate layer is arranged between the semiconductors in order to hear the absorption capacity of the solar cell or to pass it on to certain spectral components of the radiation.
  • the conductive intermediate layer reflects a part of the incident light and forwards the remaining part.
  • the first region 17 is derived from the use of laser radiation to create a laser trench in the transparent conductive layer 12.
  • the trench is filled with the first semiconductor 12 so that the front contact 12 is divided into two separate parts isolated from each other.
  • the second region 18 originates from the use of a second laser radiation to generate a laser ditch in the second Semiconductor layer 15, the conductive intermediate layer 14 and the first semiconductor layer 13.
  • this trench is filled with the conductive material of the backside contact 16, so that the rear side contact of the first solar cell Si is in communication with the front contact of the second solar cell S 2 .
  • the third region 19 is derived from the use of a third laser beam to create a laser trench in the backside contact 16, the second semiconductor layer 15, the intermediate conductive layer 14, and the first semiconductor layer 13.
  • the two solar cells Si and S 2 are physically separated from each other. It can be seen from FIG. 1 that the two solar cells Si and S 2 are connected in series.
  • the photocurrent flows from the front contact to the rear side contact of the first solar cell Si and then to the front contact of the second solar cell S 2 via the path Wi. Due to the electrical conductivity of the conductive intermediate layer 14, however, there is a leakage current between the conductive
  • the laser process Since in this case only the conductive intermediate layer is removed or treated with a part of the first semiconductor layer, the laser process must be very accurate, so that it does not affect the adjacent layers. Despite the required accuracy of the laser process, however, remains of the conductive intermediate layer and / or the first semiconductor layer may remain, which nevertheless lead to a leakage current. Disclosure of the invention
  • the invention provides a manufacturing method with the features of
  • the invention includes the fundamental idea of providing a method for producing a solar cell, which comprises arranging a transparent conductive layer on a transparent support and removing this layer from a first region by laser radiation.
  • the transparent conductive layer serves as the front contact of the solar cell.
  • the method comprises arranging a first semiconductor layer and a conductive one arranged on the first semiconductor layer
  • the method comprises disposing a second semiconductor layer on the conductive intermediate layer and removing the second semiconductor layer, the conductive intermediate layer and the first semiconductor layer from a third region by laser radiation, wherein the third region is separate from the first and second regions.
  • the method comprises disposing a conductive layer serving as back contact of the solar cell on the second semiconductor layer and removing the back contact, the second semiconductor layer, the conductive intermediate layer and the first semiconductor layer from a fourth region by laser radiation, the fourth one Area separated from the first, second and third area.
  • the second region between the first and the third region and the third region between the second and the fourth region, wherein the removal in the second region for interrupting a current path to avoid a leakage current between the conductive intermediate layer and the backside contact acts.
  • the regions are preferably formed by a pulsed laser, more specifically by an Nd: YAG pulsed laser, having a wavelength between 266 nm and 1064 nm.
  • a pulsed laser more specifically by an Nd: YAG pulsed laser, having a wavelength between 266 nm and 1064 nm.
  • the laser energy can be adjusted between 0.1 pJ and 50 pJ, in particular between 1 pJ and 20 pJ. In this case, the laser energy can be incident either on the side of the conductive intermediate layer or on the side of the carrier.
  • the transparent conductive layer can be removed from the second region.
  • An Nd: YAG pulse laser is also used for this, which operates in the same ranges of wavelengths, pulse duration and energy. However, a wavelength of 266 nm, 532 nm or 1064 nm is used here.
  • the use of a laser, in particular Nd-YAG laser, for structuring the solar cells is more reliable, more stable and more reliable than other methods, such. As chemical etching or mechanical "scribing".
  • the adjustment of different wavelengths allows the use of the Nd-YAG laser on different thin films having different absorption properties.
  • the optics of the laser light can be adjusted here in order to achieve laser trenches with a width between 10 and 100 .mu.m, in particular between 30 and 50 pm.
  • a computer-controlled X-Y-Z stage as well as an automated positioning device can be used to achieve greater accuracy in lasing.
  • the solar cell may include more than two semiconductor layers and more than one conductive interlayer disposed between the transparent conductive layer and the backside contact. The semiconductor layers and the conductive intermediate layers lie on top of each other, each conductive
  • Intermediate layer is arranged between two semiconductor layers.
  • the different semiconductors can be selected from different materials with different bandgaps or dopings to change the absorption characteristics of the solar cell.
  • the production method is modified in such a way that the laser step for generating the second region, ie the second laser step, takes place after arranging the last conductive intermediate layer and before arranging the last semiconductor layer.
  • the solar cell may correspond to a tandem solar cell consisting of two or more solar cells of different material stacked monolithically.
  • the efficiency of the entire arrangement is heard, since the solar cells are optimized to a certain wavelength range and a wider range of sunlight is absorbed.
  • additional layers can be inserted in the solar cell.
  • an antireflection layer can be arranged to increase the antireflective effects of the device.
  • the transparent support may in this case be a highly transparent optical glass, in particular float glass, but also Plexiglas.
  • a transparent carrier in this case allows the use of the thin-film module as building-integrated element such. B: as glazing.
  • the use of a plastic carrier also allows the thin film module to be flexible and take different shapes.
  • the transparent conductive layer may comprise a doped oxide, in particular a doped zinc oxide or a doped tin oxide.
  • the semiconductor layers may comprise amorphous silicon, polycrystalline silicon, microcrystalline silicon or silicon germanium. Alternatively, the Hableitertik a material such. Copper-indium (gallium) selenium (CIS-CIGS) in any stoichiometric composition containing no silicon.
  • the conductive intermediate layer may comprise a conductive oxide or nitride, in particular a doped zinc oxide or a doped tin oxide, as well as any conductive oxide or nitride.
  • the conductive layer which acts as back contact of the solar cell, may comprise a metal or an oxide as well as a combination of an oxide with a metal, in particular a transparent conductive oxide.
  • Fig. 1 is a schematic representation of a cross section of a
  • 2a to 2h is a schematic representation of the manufacturing process steps according to an embodiment of the invention.
  • 3a to 3h is a schematic representation of the manufacturing process steps according to another embodiment of the invention.
  • Figures 2a to 2h show the steps of a method 20 for producing a thin-film solar cell according to an embodiment of the invention, wherein only two semiconductor layers and a conductive intermediate layer are used.
  • the transparent conductive layer (TCO) 22 is deposited on the transparent support 21 by vapor deposition (Fig. 2a). Then, an Nd: YAG laser (first laser step) is used to remove this layer 22 from the first region 27 (FIG. 2b) and isolate strips of TCO 22 from the carrier 21.
  • Nd: YAG laser first laser step
  • the first semiconductor layer 23 and the intermediate conductive layer 24 are then deposited on the transparent conductive layer 22 by a second vapor deposition (Figure 2c). With this deposition step, the material of the first semiconductor 23 fills the trenches, which consist of the first
  • Laser step originate.
  • the conductive intermediate layer 24 removes the first semiconductor layer 23 and the transparent conductive layer 22 from the second region 27a '(FIG. 2d).
  • the second semiconductor layer 25 is then deposited on the intermediate conductive layer 24 by a third vapor deposition (Figure 2e). With this deposition step, the material of the second semiconductor 25 fills the trenches originating from the second laser step.
  • the second semiconductor layer 25, the intermediate conductive layer 24 and the first semiconductor layer 23 are removed from the third region 28 by laser radiation (third laser step) (FIG. 2f).
  • a Nd-YAG laser is used.
  • a metal 26 serving as back contact of the solar cell is deposited on the second semiconductor layer 25 by a fourth vapor deposition ( Figure 2g). With this deposition step, the metal 26 fills the trenches originating from the third laser step. Thus, an electrical connection is made between the backside contact and the front contact.
  • the metal 26, the second semiconductor layer 25, the intermediate conductive layer 24, and the first semiconductor layer 23 are then removed from the fourth region 29 by laser radiation (fourth laser step) (FIG. 2h).
  • the solar cells are split and connected together in series.
  • a Nd-YAG laser is used.
  • the second region 27a lies between the first and the third region 27, 28 and the third region 28 lies between the second and the fourth region 27a', 29.
  • the second (filled) region 27a 'filled with the material of the second semiconductor 25 serves as an insulating portion for preventing a leakage current between the conductive intermediate layer 24 and the backside contact 26 acts as any possible current along the conductive intermediate layer 24 until the rear-side contact 26 in the second region 28 (see W 2 in Fig.l) from the second region 27a 'is interrupted.
  • FIGS. 3 a to 3 h show the steps of a method 30 for producing a thin-film solar cell according to another embodiment of the invention, which fundamentally corresponds to the same steps of FIG. 2.
  • the second (filled) region 27a which is filled with the material of the second semiconductor 25, acts as an insulation section for avoiding a leakage current between the conductive intermediate layer 24 and the backside contact 26, since every possible one Current along the conductive intermediate layer 24 to the rear-side contact 26 in the second region 28 (see W 2 in Fig.l) is interrupted by the second region 27 a (Fig. 3h).

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  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Procédé de fabrication d'une cellule solaire comportant les étapes suivantes : disposer une couche transparente conductrice qui sert de contact avant de la cellule solaire; enlever par rayonnement laser la couche transparente conductrice sur une première zone; disposer une première couche semi-conductrice et une couche intermédiaire conductrice; enlever par rayonnement laser au moins la couche intermédiaire conductrice et la première couche semi-conductrice d'une deuxième zone; disposer une deuxième couche semi-conductrice; enlever par rayonnement laser la deuxième couche semi-conductrice, la couche intermédiaire conductrice et la première couche semi-conductrice d'une troisième zone; disposer une couche conductrice qui sert de contact arrière à l'ensemble photovoltaïque; et enlever par rayonnement laser le contact arrière, la deuxième couche semi-conductrice, la couche intermédiaire conductrice et la première couche semi-conductrice d'une quatrième zone, cette quatrième zone étant disposée de manière séparée de la première, de la deuxième et de la troisième zone, et l'enlèvement dans la deuxième zone servant à interrompre une voie de courant pour éviter une fuite de courant entre la couche intermédiaire conductrice et le contact arrière.
PCT/EP2011/074164 2011-02-15 2011-12-28 Procédé de fabrication d'une cellule solaire WO2012110157A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011004153A DE102011004153A1 (de) 2011-02-15 2011-02-15 Verfahren zur Herstellung einer Solarzelle
DE102011004153.2 2011-02-15

Publications (1)

Publication Number Publication Date
WO2012110157A1 true WO2012110157A1 (fr) 2012-08-23

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PCT/EP2011/074164 WO2012110157A1 (fr) 2011-02-15 2011-12-28 Procédé de fabrication d'une cellule solaire

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WO (1) WO2012110157A1 (fr)

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Publication number Priority date Publication date Assignee Title
DE102012111895A1 (de) 2012-12-06 2014-06-12 Lpkf Laser & Electronics Ag Verfahren zur Herstellung eines Solarmoduls

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1198014A2 (fr) * 2000-10-05 2002-04-17 Kaneka Corporation Module photovoltaique et procédé pour sa fabrication
JP2006313872A (ja) 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池
WO2011016490A1 (fr) * 2009-08-05 2011-02-10 シャープ株式会社 Elément photovoltaïque superposé et procédé de production d'un élément photovoltaïque superposé

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1198014A2 (fr) * 2000-10-05 2002-04-17 Kaneka Corporation Module photovoltaique et procédé pour sa fabrication
JP2006313872A (ja) 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池
WO2011016490A1 (fr) * 2009-08-05 2011-02-10 シャープ株式会社 Elément photovoltaïque superposé et procédé de production d'un élément photovoltaïque superposé

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DE102011004153A1 (de) 2012-08-16

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