WO2012098771A1 - Wire for ball bonding - Google Patents

Wire for ball bonding Download PDF

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Publication number
WO2012098771A1
WO2012098771A1 PCT/JP2011/077765 JP2011077765W WO2012098771A1 WO 2012098771 A1 WO2012098771 A1 WO 2012098771A1 JP 2011077765 W JP2011077765 W JP 2011077765W WO 2012098771 A1 WO2012098771 A1 WO 2012098771A1
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WO
WIPO (PCT)
Prior art keywords
wire
bonding
weight
ball
ball bonding
Prior art date
Application number
PCT/JP2011/077765
Other languages
French (fr)
Japanese (ja)
Inventor
長谷川　剛
Original Assignee
タツタ電線株式会社
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Publication date
Application filed by タツタ電線株式会社 filed Critical タツタ電線株式会社
Publication of WO2012098771A1 publication Critical patent/WO2012098771A1/en

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a nickel / palladium / gold (Ni / Pd / Au) coated electrode on a semiconductor element in a semiconductor package such as a power IC, LSI, transistor, BGA (Ball Grid package), and QFN (Quad Flat Non lead package). Further, the present invention relates to a ball bonding wire for connecting a conductor frame of a circuit wiring board such as a lead frame, a ceramic substrate, and a printed board by a ball bonding method.
  • the semiconductor package such as the BGA is provided with a package substrate 3 on a wiring board 1 via solder balls 2, and further a semiconductor chip via a die bonding material 4 on the package substrate 3. (Element) 5 is provided, and the semiconductor chip 5 is sealed with a sealing material 6.
  • the electrical connection between the electrode a of the semiconductor chip 5 and the conductor wiring (terminal) c of the package substrate 3 is performed by the ball bonding method.
  • connection method by the ball bonding method is generally in the form shown in FIGS. 2 (a) to 2 (h).
  • a wire W is inserted into the capillary 10a and a ball (FAB) is inserted at the tip thereof.
  • Free Air Ball) b is formed, the clamp 10b is opened, and the capillary 10a is lowered toward the electrode a on the integrated circuit element. At this time, the ball (FAB) b is captured in the capillary 10a.
  • the capillary 10a grips the molten ball b and applies heat / load / ultrasonic waves to the molten ball b, whereby the molten ball b Are bonded to the electrode a by solid phase bonding (bonded ball b ′), and a 1st bond is formed and bonded to the electrode a (1st bonding, FIG. 2B).
  • the capillary 10a moves up to a certain height (FIG. (C)) and then moves to a position directly above the conductor wiring c (FIGs. (D) to (e)).
  • a special movement is performed on the capillary 10a so that the wire W is attached with a “string” (see the solid line from the chain line in FIG. 4D).
  • Capillary 10a that reaches directly above the conductor wiring c descends toward the conductor wiring c and presses the wire W against the conductor wiring (2nd target) c ((e) to (f) in the figure). At the same time, heat, a load, and an ultrasonic wave are applied to the pressed portion, thereby deforming the wire W and joining the wire W onto the conductor wiring c, and a tail that secures the tail in the next step. A bond is formed (2nd junction, FIG. 2 (f)).
  • the capillary 10a rises with the wire W remaining, secures a tail of a certain length at the tip of the capillary 10a, then closes the clamp 10b (holds the wire W), and the tail The wire W is torn off from the bond portion (FIG. 2 (g)).
  • the capillary 10a stops when it rises to the required height, and the tip of the wire W secured at the tip of the capillary 10a is discharged (sparked) by applying a high voltage with the discharge rod g, and the wire is heated by the heat. W is melted, and the melted wire material is turned into a spherical ball b by the surface tension and hardens (FIG. 2 (h)).
  • the bonding wire (wire) W used in this ball bonding method 4N to 2N gold is used.
  • gold is frequently used because the shape of the gold ball b is a perfect sphere and the hardness of the gold ball b to be formed is appropriate, and the chip 5 is damaged by the load and ultrasonic wave at the time of joining. This is because reliable bonding can be achieved without high reliability.
  • the gold bonding wire W is expensive, it is also replaced with an inexpensive copper bonding wire.
  • a copper bonding wire whose surface is covered with palladium (Pd) or the like to improve bonding properties has been developed and used in part (Patent Document 1).
  • Gold bonding wires are expensive.
  • the copper bonding wire that is an alternative material is inexpensive, but the FAB is harder than the gold bonding wire, and if the tip of the electrode a is fragile, the risk of chip damage increases.
  • the 2nd bondability is poor as compared with the gold bonding wire, and there is a problem in the continuous bonding property.
  • the surface-coated copper bonding wire has better 2nd bondability and better continuous bondability than the copper bonding wire, but the FAB is harder than the copper bonding wire, which causes a problem of chip damage.
  • Ni / Pd / Au is used for in-vehicle applications that require high temperature reliability, for example, reliability at 150 ° C. or higher.
  • An electrode a coated with (nickel / palladium / gold) has been studied. Further, it is necessary to reduce damage to the fragile chip 5. There is a problem that the surface-coated copper bonding wire is difficult to bond to the Ni / Pd / Au coated electrode a, and the copper bonding wire is intended to be bonded under conditions that do not damage the fragile chip 5. Then, there exists a problem that sufficient joining cannot be performed. Incidentally, if the gold bonding wire and the Ni / Pd / Au coated electrode a are joined, high temperature reliability can be obtained, but there is a problem that the material cost becomes expensive.
  • an object of the present invention is to provide a bonding wire that has good bondability with the Ni / Pd / Au coated electrode a and is cheaper than a gold bonding wire.
  • the present invention provides a bonding wire for connecting a Ni / Pd / Au coated electrode of a semiconductor element and a conductor wiring of a circuit wiring board by a ball bonding method from Ca, Cu, Gd, and Sm.
  • a ball bonding method from Ca, Cu, Gd, and Sm.
  • the bonding wire mainly composed of Ag has better bondability to the Ni / Pd / Au coated electrode than the copper bonding wire and the surface coated copper bonding wire, while compared to the gold bonding wire mainly composed of Au, It can be cheap.
  • the coated electrode can be formed by a known means such as a plating method or a vapor deposition method, but the plating method is generally used. Incidentally, although the corrosion resistance of the joint portion between Ag and the Ni / Pd / Au coated electrode is good, the joint portion between Al and Ag is easily corroded.
  • the wire strength becomes low, and a wire flow occurs during resin molding after bonding. More preferably, if it is 10 ppm by weight or more, higher wire strength can be obtained. On the other hand, if it exceeds 500 ppm by weight, the shape of the FAB becomes unstable and a good spherical FAB cannot be obtained. More preferably, it is 300 ppm by weight or less, and a good FAB can be stably obtained.
  • Ca when one or more elements selected from Gd and Sm are added in a total amount of 10 ppm by weight or more, the mechanism is unknown, but higher wire strength can be obtained.
  • the reliability of the joint portion is lowered. More preferably, if it is 0.7% by weight or more, reliability in a wet environment can be secured. Further, if an amount exceeding 5.0% by weight is added, the electrical resistance of the wire increases, so that the electrical characteristics required as a bonding wire cannot be obtained. Moreover, since these additive elements are all expensive, a more preferable range is set to 3.0% by weight or less. Further, as shown in FIG. 2 (h), when the FAB is manufactured, when the electric wire is discharged between the wire tip and the discharge rod g to melt the wire tip, Au and Pd having higher melting points than Ag are used in the FAB.
  • the surface of FAB (ball b) becomes a high-concentration layer of Au or Pd, contributing to high reliability of the bonding interface with electrode a at the next 1st bonding in FIG. .
  • the accumulation on the surface of the FAB involves the melting points of Au and Pd.
  • the melting point of Pd (1555 ° C.) is higher than the melting point of Au (1064 ° C.), and Pd has a higher concentration.
  • Pd is preferable to Au.
  • the wire diameter of the wire W is arbitrary as long as it can be used as a bonding wire, but it is, for example, 10 to 50.8 ⁇ m. If it is 50.8 ⁇ m or less, the molten ball b can be made smaller, and if it is less than 10 ⁇ m, it becomes difficult for an operator to pass the wire W through the capillary 10a before bonding, workability is deteriorated, and air pressure is applied to the wire by air pressure. Sufficient tension cannot be applied, and loop control may be difficult.
  • the present invention is mainly composed of Ag as described above, it can be made cheaper than a gold bonding wire, and it has a moderate strength and has a good FAB and Ni / Pd / Au coated electrode. It is possible to have good bonding properties.
  • a silver alloy having chemical components shown in Table 1 was cast to prepare an 8 mm ⁇ wire rod.
  • the wire rod was drawn to obtain a silver alloy wire having a final wire diameter of 30 ⁇ m, and tempered so as to have an elongation of 2 to 4% and a predetermined tensile strength by continuous annealing at 400 to 600 ° C. in a nitrogen atmosphere.
  • the chemical components were quantified by ICP-OES (High Frequency Inductively Coupled Plasma Emission Spectroscopy).
  • Examples 1 to 21 and Comparative Examples 1 to 5 were obtained.
  • R (R H (1000) / H): The bonding sample was placed in a 200 ° C. test tank for 1000 hours, and the shear strength H (1000) after 1000 hours was divided by the initial shear strength H (Initial). (Initial) ⁇ 100). If R is 80% or more, it is A, 70% or more and less than 80% is B, 60% or more and less than 70% is C, and if it is less than 60%, it is D.
  • Electrode resistance The electric resistance at room temperature was measured using a four-terminal method. Since resistivity is considered to have a sufficient conductivity is less than 3.0 ⁇ 10 -8 ⁇ ⁇ m A , resistivity 3.0 ⁇ 10 -8 ⁇ ⁇ m or more 4.0 ⁇ 10 -8 If it is less than ⁇ ⁇ m, it is B, and if the specific resistance is 4.0 ⁇ 10 ⁇ 8 ⁇ ⁇ m or more, it is D.
  • each of Examples 1 to 21 includes a total of 5 to 500 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and one or more elements selected from Pd and Au.
  • C or more was obtained, and evaluation with no practical problem was obtained.
  • Ca is included, and at least one of Gd and Sm is included (in Table 1, Ca + (Gd + Sm)).
  • it contains 10 to 300 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and 0.7 to 3.0% by weight of one or more elements selected from Pd and Au. From Examples 1 to 8, 12, and 17, it can be understood that good FAB can be stably obtained.
  • this bonding wire W As long as the effects of the present invention can be obtained, it is made of Au, Pt, Pd, Ni, etc. as in Patent Document 1, for example, thickness: 0.02 to 0.00. A 09 ⁇ m coating layer may be formed. When Au or Pd is coated, the addition of 0.5 to 5.0% by weight of Pd and Au can be avoided.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

An inexpensive ball bonding wire (W) is given a high degree of bondability to a Ni/Pd/Au coated electrode (a), which has a high degree of high temperature reliability, and made to cause little damage to vulnerable chips. The wire for ball bonding is for connecting a Ni/Pd/ Au coated electrode (a) of a semiconductor element and conductive wiring (c) of a circuit wiring substrate by ball bonding and has a diameter of 10 - 50 µm. The wire for ball bonding contains 10 - 300 ppm by mass of two or more elements selected from Ca, Cu, Gd, and Sm and contains 0.7 - 3.0% by weight of one or more elements selected from Pd and Au, with the rest being Ag and inevitable impurities. Ag is made the main component; therefore a bonding wire that is less expensive than a gold bonding wire is obtained. The wire has suitable strength, and excellent FAB and excellent bondability with the Ni/Pd/Au coated electrode (a) are obtained. If the bonding wire contains Ca and at least one of Gd and Sm, and if the total contained is 10 ppm by weight or greater, the wire strength is improved.

Description

ボールボンディング用ワイヤBall bonding wire
　この発明は、パワーＩＣ、ＬＳＩ、トランジスタ、ＢＧＡ（Ball Grid Array package）、ＱＦＮ（Quad Flat Non lead package）等の半導体パッケージにおける半導体素子上のニッケル・パラジウム・金（Ｎｉ／Ｐｄ／Ａｕ）被覆電極と、リードフレーム、セラミック基板、プリント基板等の回路配線基板の導体配線とをボールボンディング法によって接続するためのボールボンディング用ワイヤに関するものである。 The present invention relates to a nickel / palladium / gold (Ni / Pd / Au) coated electrode on a semiconductor element in a semiconductor package such as a power IC, LSI, transistor, BGA (Ball Grid package), and QFN (Quad Flat Non lead package). Further, the present invention relates to a ball bonding wire for connecting a conductor frame of a circuit wiring board such as a lead frame, a ceramic substrate, and a printed board by a ball bonding method.
　上記ＢＧＡ等の半導体パッケージは、例えば、図１に示すように、配線板１上にはんだボール２を介してパッケージ基板３を設け、さらに、そのパッケージ基板３にダイボンディング材４を介して半導体チップ（素子）５を設けて、その半導体チップ５を封止材６によって封止した構造である。この半導体パッケージにおける半導体チップ５の電極ａとパッケージ基板３の導体配線（端子）ｃとの電気接続は、上記ボールボンディング法によって行われる。 For example, as shown in FIG. 1, the semiconductor package such as the BGA is provided with a package substrate 3 on a wiring board 1 via solder balls 2, and further a semiconductor chip via a die bonding material 4 on the package substrate 3. (Element) 5 is provided, and the semiconductor chip 5 is sealed with a sealing material 6. In this semiconductor package, the electrical connection between the electrode a of the semiconductor chip 5 and the conductor wiring (terminal) c of the package substrate 3 is performed by the ball bonding method.
　そのボールボンディング法による接続方法は、図２（ａ）～（ｈ）に示す態様が一般的であり、同図（ａ）に示す、ワイヤＷがキャピラリー１０ａに挿通されてその先端にボール（ＦＡＢ：Ｆｒｅｅ　Ａｉｒ　Ｂａｌｌ）ｂが形成された状態から、クランプ１０ｂが開いて、キャピラリー１０ａが集積回路素子上の電極ａに向かって降下する。このとき、ボール（ＦＡＢ）ｂはキャピラリー１０ａ内に捕捉される。 The connection method by the ball bonding method is generally in the form shown in FIGS. 2 (a) to 2 (h). As shown in FIG. 2 (a), a wire W is inserted into the capillary 10a and a ball (FAB) is inserted at the tip thereof. : Free Air Ball) b is formed, the clamp 10b is opened, and the capillary 10a is lowered toward the electrode a on the integrated circuit element. At this time, the ball (FAB) b is captured in the capillary 10a.
　ターゲットである電極ａに溶融ボールｂが接触すると（キャピラリー１０ａが電極ａに至ると）キャピラリー１０ａが溶融ボールｂをグリップし、溶融ボールｂに熱・荷重・超音波を与え、それによって溶融ボールｂが圧着されて（圧着ボールｂ’となって）電極ａと固相接合され、１ｓｔボンドが形成されて電極ａと接着する（１ｓｔ接合、図２（ｂ））。
　１ｓｔボンドが形成されれば、キャピラリー１０ａは、一定高さまで上昇した後（同図（ｃ））、導体配線ｃの真上まで移動する（同図（ｄ）～（ｅ））。このとき、安定したループを形成するため、キャピラリー１０ａに特殊な動きをさせてワイヤＷに「くせ」を付ける動作をする場合がある（同図（ｄ）の鎖線から実線参照）。 When the molten ball b comes into contact with the target electrode a (when the capillary 10a reaches the electrode a), the capillary 10a grips the molten ball b and applies heat / load / ultrasonic waves to the molten ball b, whereby the molten ball b Are bonded to the electrode a by solid phase bonding (bonded ball b ′), and a 1st bond is formed and bonded to the electrode a (1st bonding, FIG. 2B).
When the 1st bond is formed, the capillary 10a moves up to a certain height (FIG. (C)) and then moves to a position directly above the conductor wiring c (FIGs. (D) to (e)). At this time, in order to form a stable loop, there is a case where a special movement is performed on the capillary 10a so that the wire W is attached with a “string” (see the solid line from the chain line in FIG. 4D).
　導体配線ｃの真上に至ったキャピラリー１０ａは、導体配線ｃに向かって降下し、ワイヤＷを導体配線（２ｎｄターゲット）ｃに押付ける（同図（ｅ）～（ｆ））。これと同時に、その押付け部位に熱・荷重・超音波を与え、それによってワイヤＷを変形させ、ワイヤＷを導体配線ｃ上に接合させるためのステッチボンドと、次のステップでテイルを確保するテイルボンドを形成する（２ｎｄ接合、図２（ｆ））。 Capillary 10a that reaches directly above the conductor wiring c descends toward the conductor wiring c and presses the wire W against the conductor wiring (2nd target) c ((e) to (f) in the figure). At the same time, heat, a load, and an ultrasonic wave are applied to the pressed portion, thereby deforming the wire W and joining the wire W onto the conductor wiring c, and a tail that secures the tail in the next step. A bond is formed (2nd junction, FIG. 2 (f)).
　その両ボンドを形成した後、キャピラリー１０ａはワイヤＷを残したまま上昇し、キャピラリー１０ａの先端に一定の長さのテイルを確保した後、クランプ１０ｂを閉じて（ワイヤＷをつかんで）、テイルボンドの部分からワイヤＷを引きちぎる（図２（ｇ））。 After forming both the bonds, the capillary 10a rises with the wire W remaining, secures a tail of a certain length at the tip of the capillary 10a, then closes the clamp 10b (holds the wire W), and the tail The wire W is torn off from the bond portion (FIG. 2 (g)).
　キャピラリー１０ａは、所要の高さまで上昇すると停止し、そのキャピラリー１０ａの先端に確保されたワイヤＷの先端部分に、放電棒ｇでもって高電圧を掛けて放電し（スパークし）、その熱でワイヤＷを溶かし、この溶けたワイヤ素材は表面張力によって球状に近い溶融ボールｂになって固まる（図２（ｈ））。 The capillary 10a stops when it rises to the required height, and the tip of the wire W secured at the tip of the capillary 10a is discharged (sparked) by applying a high voltage with the discharge rod g, and the wire is heated by the heat. W is melted, and the melted wire material is turned into a spherical ball b by the surface tension and hardens (FIG. 2 (h)).
　以上の作用で一サイクルが終了し、以後、同様な作用によって、電極ａと導体配線ｃのボールボンディング法による接続がなされる。 With the above operation, one cycle is completed, and thereafter, the electrode a and the conductor wiring c are connected by the ball bonding method by the same operation.
　このボールボンディング法に使用されるボンディング線（ワイヤ）Ｗの材質としては、４Ｎ～２Ｎの金が使用されている。このように金が多用されるのは金ボールｂの形状が真円球状となるとともに、形成される金ボールｂの硬さが適切であって、接合時の荷重、超音波によってチップ５を損傷することがなく、確実な接合ができ、その信頼性が高いからである。
　一方、金ボンディングワイヤＷは高価であることから、安価な銅ボンディングワイヤへの置き換えもなされている。さらに、その銅ボンディングワイヤ表面にパラジウム（Ｐｄ）等を被覆してボンディング性を高めたものが開発され、一部では使用されている（特許文献１）。 As the material of the bonding wire (wire) W used in this ball bonding method, 4N to 2N gold is used. As described above, gold is frequently used because the shape of the gold ball b is a perfect sphere and the hardness of the gold ball b to be formed is appropriate, and the chip 5 is damaged by the load and ultrasonic wave at the time of joining. This is because reliable bonding can be achieved without high reliability.
On the other hand, since the gold bonding wire W is expensive, it is also replaced with an inexpensive copper bonding wire. Further, a copper bonding wire whose surface is covered with palladium (Pd) or the like to improve bonding properties has been developed and used in part (Patent Document 1).
特開２０１０－１９９５２８号公報JP 2010-199528 A
　金ボンディングワイヤは高価である。その代替材である銅ボンディングワイヤは安価ではあるが、金ボンディングワイヤに比べてＦＡＢが硬く、電極ａのチップが脆弱であるとチップダメージ発生の恐れが高くなる。また、金ボンディングワイヤに比べて２ｎｄ接合性が悪く、連続ボンディング性に問題がある。
　表面被覆銅ボンディングワイヤは、銅ボンディングワイヤに比べて２ｎｄ接合性がよく、連続ボンディング性がよいが、ＦＡＢが銅ボンディングワイヤよりもさらに硬くなるため、チップダメージ発生の問題がある。 Gold bonding wires are expensive. The copper bonding wire that is an alternative material is inexpensive, but the FAB is harder than the gold bonding wire, and if the tip of the electrode a is fragile, the risk of chip damage increases. In addition, the 2nd bondability is poor as compared with the gold bonding wire, and there is a problem in the continuous bonding property.
The surface-coated copper bonding wire has better 2nd bondability and better continuous bondability than the copper bonding wire, but the FAB is harder than the copper bonding wire, which causes a problem of chip damage.
　また、従来、電極ａにはＡｌ合金(Ａｌ－Ｓｉ－Ｃｕ等）パッドが用いられていたが、高温信頼性、例えば１５０℃以上における信頼性が求められる車載などの用途ではＮｉ／Ｐｄ／Ａｕ（ニッケル／パラジウム／金）被覆した電極ａが検討されている。さらに脆弱なチップ５に対するダメージ低減の必要もある。
　このＮｉ／Ｐｄ／Ａｕ被覆電極ａに対し、上記表面被覆銅ボンディングワイヤは接合し難いという問題があり、銅ボンディングワイヤは、脆弱なチップ５に対してダメージを与えないような条件でボンディングしようとすると、十分な接合ができないという問題がある。
　因みに、金ボンディングワイヤとＮｉ／Ｐｄ／Ａｕ被覆電極ａの接合であれば、高温信頼性は得られるが、材料費が高価になるという問題がある。 Conventionally, an Al alloy (Al—Si—Cu, etc.) pad has been used for the electrode a, but Ni / Pd / Au is used for in-vehicle applications that require high temperature reliability, for example, reliability at 150 ° C. or higher. An electrode a coated with (nickel / palladium / gold) has been studied. Further, it is necessary to reduce damage to the fragile chip 5.
There is a problem that the surface-coated copper bonding wire is difficult to bond to the Ni / Pd / Au coated electrode a, and the copper bonding wire is intended to be bonded under conditions that do not damage the fragile chip 5. Then, there exists a problem that sufficient joining cannot be performed.
Incidentally, if the gold bonding wire and the Ni / Pd / Au coated electrode a are joined, high temperature reliability can be obtained, but there is a problem that the material cost becomes expensive.
　この発明は、以上の実情の下、Ｎｉ／Ｐｄ／Ａｕ被覆電極ａとの接合性がよく、かつ金ボンディングワイヤより安価なボンディング用ワイヤとすることを課題とする。 In view of the above circumstances, an object of the present invention is to provide a bonding wire that has good bondability with the Ni / Pd / Au coated electrode a and is cheaper than a gold bonding wire.
　上記課題を達成するため、この発明は、半導体素子のＮｉ／Ｐｄ／Ａｕ被覆電極と回路配線基板の導体配線をボールボンディング法によって接続するためのボンディング用ワイヤにおいて、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素を合計で５～５００重量ｐｐｍ含み、Ｐｄ、Ａｕから選ばれる１種以上の元素を合計で０．５～５．０重量％含んで、それ以外がＡｇ及び不可避不純物からなる構成としたものである。 In order to achieve the above object, the present invention provides a bonding wire for connecting a Ni / Pd / Au coated electrode of a semiconductor element and a conductor wiring of a circuit wiring board by a ball bonding method from Ca, Cu, Gd, and Sm. Contains a total of 5 to 500 ppm by weight of two or more elements selected, contains a total of 0.5 to 5.0% by weight of one or more elements selected from Pd and Au, and the rest are Ag and inevitable impurities It is set as the structure which consists of.
　Ａｇを主体とするボンディングワイヤは、Ｎｉ／Ｐｄ／Ａｕ被覆電極に対し、銅ボンディングワイヤや表面被覆銅ボンディングワイヤに比べて接合性がよく、一方、Ａｕを主体とする金ボンディングワイヤに比べれば、安価なものとし得る。被覆電極は、メッキ法、蒸着法等の周知の手段で形成し得るが、メッキ法が一般的である。
　因みに、ＡｇとＮｉ／Ｐｄ／Ａｕ被覆電極との接合個所の耐食性は良いが、ＡｌとＡｇとの接合個所は腐食し易い。 The bonding wire mainly composed of Ag has better bondability to the Ni / Pd / Au coated electrode than the copper bonding wire and the surface coated copper bonding wire, while compared to the gold bonding wire mainly composed of Au, It can be cheap. The coated electrode can be formed by a known means such as a plating method or a vapor deposition method, but the plating method is generally used.
Incidentally, although the corrosion resistance of the joint portion between Ag and the Ni / Pd / Au coated electrode is good, the joint portion between Al and Ag is easily corroded.
　Ｃａ、Ｃｕ、Ｇｄ、Ｓｍの合計重量が５ｐｐｍ未満であると、ワイヤ強度が低くなり、ボンディング後の樹脂モールドの際にワイヤフローが発生する。より好ましくは、１０重量ｐｐｍ以上であれば、より高いワイヤ強度が得られる。一方、５００重量ｐｐｍを超えると、ＦＡＢの形状が不安定になり、良好な球状のＦＡＢが得られなくなる。また、より好ましくは３００重量ｐｐｍ以下であって、良好なＦＡＢを安定して得ることができる。なお、Ｃａに加え、ＧｄとＳｍから選ばれた１種以上の元素を合計にして１０重量ｐｐｍ以上添加すると、そのメカニズムは不明であるが、より高いワイヤ強度が得られる。 If the total weight of Ca, Cu, Gd, and Sm is less than 5 ppm, the wire strength becomes low, and a wire flow occurs during resin molding after bonding. More preferably, if it is 10 ppm by weight or more, higher wire strength can be obtained. On the other hand, if it exceeds 500 ppm by weight, the shape of the FAB becomes unstable and a good spherical FAB cannot be obtained. More preferably, it is 300 ppm by weight or less, and a good FAB can be stably obtained. In addition to Ca, when one or more elements selected from Gd and Sm are added in a total amount of 10 ppm by weight or more, the mechanism is unknown, but higher wire strength can be obtained.
　Ｐｄ、Ａｕの合計が０．５重量％未満であると、接合部の信頼性が低くなる。より好ましくは０．７重量％以上であれば、特に湿潤環境下での信頼性が確保できる。また、５．０重量％を超えた量を添加すると、ワイヤの電気抵抗が上がるため、ボンディングワイヤとして必要な電気特性が得られない。また、これらの添加元素はいずれも高価なため、より好ましい範囲を３．０重量％以下とする。
　また、図２（ｈ）に示すように、ＦＡＢを作製する時にワイヤ先端部と放電棒ｇとの間で放電させてワイヤ先端を溶融させる際、Ａｇに比べて高融点なＡｕ、ＰｄがＦＡＢ表面に集積するため、ＦＡＢ（ボールｂ）表面がＡｕもしくはＰｄの高濃度層になり、同図（ｂ）の、次に続く１ｓｔ接合時に電極ａとの接合界面の高信頼性化に寄与する。このとき、このＦＡＢ表面への集積はＡｕ、Ｐｄの融点が関わり、Ｐｄの融点（１５５５℃）はＡｕの融点（１０６４℃）に比べて高く、Ｐｄのほうがより高濃度化するから、接合部の信頼性をより向上させるためにはＡｕよりもＰｄのほうが好ましい。 When the total of Pd and Au is less than 0.5% by weight, the reliability of the joint portion is lowered. More preferably, if it is 0.7% by weight or more, reliability in a wet environment can be secured. Further, if an amount exceeding 5.0% by weight is added, the electrical resistance of the wire increases, so that the electrical characteristics required as a bonding wire cannot be obtained. Moreover, since these additive elements are all expensive, a more preferable range is set to 3.0% by weight or less.
Further, as shown in FIG. 2 (h), when the FAB is manufactured, when the electric wire is discharged between the wire tip and the discharge rod g to melt the wire tip, Au and Pd having higher melting points than Ag are used in the FAB. Since it accumulates on the surface, the surface of FAB (ball b) becomes a high-concentration layer of Au or Pd, contributing to high reliability of the bonding interface with electrode a at the next 1st bonding in FIG. . At this time, the accumulation on the surface of the FAB involves the melting points of Au and Pd. The melting point of Pd (1555 ° C.) is higher than the melting point of Au (1064 ° C.), and Pd has a higher concentration. In order to further improve the reliability of Pd, Pd is preferable to Au.
　このワイヤＷの線径はボンディングワイヤと使用し得れば任意であるが、例えば、１０～５０．８μｍとする。５０．８μｍ以下とすると溶融ボールｂをより小さくでき、１０μｍ未満であると、ボンディング前にオペレータがワイヤＷをキャピラリー１０ａに通すのが困難になり、作業性が悪くなるうえに、空気圧によりワイヤに十分な張力をかけることができなくなり、ループ制御が困難になる恐れがある。 The wire diameter of the wire W is arbitrary as long as it can be used as a bonding wire, but it is, for example, 10 to 50.8 μm. If it is 50.8 μm or less, the molten ball b can be made smaller, and if it is less than 10 μm, it becomes difficult for an operator to pass the wire W through the capillary 10a before bonding, workability is deteriorated, and air pressure is applied to the wire by air pressure. Sufficient tension cannot be applied, and loop control may be difficult.
　この発明は、以上のようにＡｇを主体としたので、金ボンディングワイヤに比べれば、安価なものとし得て、かつ、適度な強度のワイヤとなって良好なＦＡＢ及びＮｉ／Ｐｄ／Ａｕ被覆電極との接合性が良いものとすることができる。 Since the present invention is mainly composed of Ag as described above, it can be made cheaper than a gold bonding wire, and it has a moderate strength and has a good FAB and Ni / Pd / Au coated electrode. It is possible to have good bonding properties.
半導体パッケージの概略図Schematic diagram of semiconductor package ボールボンディング接続法の説明図であり、（ａ）～（ｈ）はその途中図It is an explanatory diagram of the ball bonding connection method, (a) ~ (h) is the middle
　純度が９９．９９質量％以上（４Ｎ）の高純度Ａｇを用いて、表１に示す化学成分の銀合金を鋳造し、８ｍｍφのワイヤロッドを作製した。そのワイヤロッドを伸線加工し最終線径を３０μｍの銀合金線とし、窒素雰囲気中４００～６００℃で連続焼鈍して伸び２～４％、所定の引張強度になるように調質した。化学成分の定量はＩＣＰ－ＯＥＳ(高周波誘導結合プラズマ発光分光分析法)により行った。そのボンディング用ワイヤＷとして、
実施例１～２１、比較例１～５を得た。 Using high-purity Ag having a purity of 99.99% by mass or more (4N), a silver alloy having chemical components shown in Table 1 was cast to prepare an 8 mmφ wire rod. The wire rod was drawn to obtain a silver alloy wire having a final wire diameter of 30 μm, and tempered so as to have an elongation of 2 to 4% and a predetermined tensile strength by continuous annealing at 400 to 600 ° C. in a nitrogen atmosphere. The chemical components were quantified by ICP-OES (High Frequency Inductively Coupled Plasma Emission Spectroscopy). As the bonding wire W,
Examples 1 to 21 and Comparative Examples 1 to 5 were obtained.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　この各実施例及び各比較例に対し、下記の試験を行った。
『評価項目』
　得られた各ボンディング用ワイヤＷについて、自動ワイヤボンダで、図２に示すボール／ウェッジ接合を行った。すなわち、放電棒ｇによるアーク放電によりワイヤＷ先端にＦＡＢ（ボールｂ）を作製し、それをチップ５上のＮｉ／Ｐｄ／Ａｕメッキ電極ａに接合し、ワイヤ他端をリード端子ｃに接合した。なお、ＦＡＢ作製時にはワイヤＷ先端部にＮ２ガスを流しながらアーク放電を行った。リード端子ｃにはＡｇメッキ４２％Ｎｉ－Ｆｅ合金を使用した。
　そのボンディングにおける、ＦＡＢの安定性、ワイヤフロー、ＨＴＳＴ、ＨＡＳＴ、1ｓｔ接合部のチップ損傷、電気抵抗、及び総合評価を表２に示す。それらの評価方法等は以下の通りである。 The following tests were performed on each of the examples and the comparative examples.
"Evaluation item"
Each obtained bonding wire W was subjected to ball / wedge bonding shown in FIG. 2 by an automatic wire bonder. That is, an FAB (ball b) was produced at the tip of the wire W by arc discharge with the discharge rod g, and it was joined to the Ni / Pd / Au plated electrode a on the chip 5 and the other end of the wire was joined to the lead terminal c. . Incidentally, at the time of FAB produced were arc discharge while flowing N 2 gas to the wire W tip. For the lead terminal c, an Ag-plated 42% Ni—Fe alloy was used.
Table 2 shows FAB stability, wire flow, HTST, HAST, chip damage at the 1st junction, electrical resistance, and overall evaluation in the bonding. Their evaluation methods are as follows.
　『評価方法』
　「ＦＡＢ形状の安定性の評価」
　ワイヤ径に対するＦＡＢ（ボールｂ）径の比率が小さくなると、安定性の確保が難しいことから、ＦＡＢ径／ワイヤ径の比率が１．９～２．１の時の真球性を評価した。接合前のボールｂを３０本観察して、形状が真球状であるかを判定した。すべて真球状になり、ワイヤＷの中心位置とＦＡＢの中心位置がずれる芯ずれが１本以下であればＡ、異形状のＦＡＢ発生が２本以下で芯ずれが１本を越え５本以下であればＢ、異形状のＦＡＢ発生が３本以上もしくは芯ずれが６本以上であれば使用できないと判断して評価をＤとした。 "Evaluation methods"
"Evaluation of FAB shape stability"
Since it is difficult to ensure stability when the ratio of the FAB (ball b) diameter to the wire diameter is small, the sphericity when the FAB diameter / wire diameter ratio is 1.9 to 2.1 was evaluated. Thirty balls b before bonding were observed to determine whether the shape was spherical. All are spherical and the center position of the wire W and the center position of the FAB are misaligned by 1 or less, A. If there are 2 or fewer misaligned FAB occurrences, the misalignment is more than 1 and 5 or less. If there is B, the occurrence of irregularly shaped FAB is 3 or more, or if the misalignment is 6 or more, it is determined that it cannot be used, and the evaluation is D.
　「樹脂封止時のワイヤフローの評価」
　ワイヤＷ長５ｍｍのボンディング試料をエポキシ樹脂で封止した後で、Ｘ線非破壊観察装置にて最大ワイヤフロー量を測定した。測定は２０本行い、その平均値をワイヤ長５ｍｍで除した割合をワイヤフロー率とした。このワイヤフロー率が３％未満ならＡ、３％以上５％未満ではＢ、５％以上７％未満ではＣ、７％以上では実用上の問題があると考えて評価Ｄとした。 "Evaluation of wire flow during resin sealing"
After a bonding sample having a wire W length of 5 mm was sealed with an epoxy resin, the maximum wire flow amount was measured with an X-ray non-destructive observation apparatus. Twenty measurements were made, and the ratio of the average value divided by the wire length of 5 mm was taken as the wire flow rate. If the wire flow rate is less than 3%, A is evaluated as D when it is considered that there is a practical problem when A is 3% or more and less than 5%, B is 5% or more and less than 7%, and 7% or more.
　「ＨＴＳＴ(High Temperature Storage Test)による信頼性評価」
　ボンディング試料を200℃の試験槽中に1000時間装入し、1000時間経過後のシェア強度Ｈ(1000)を初期のシェア強度Ｈ(Initial)で除した割合Ｒ(Ｒ=Ｈ(1000)/Ｈ(Initial)×100)を用いて評価した。Ｒが８０％以上ならＡ、７０％以上８０％未満でＢ、６０％以上７０％未満ではＣ、６０％未満では実用上問題があると考えてＤとした。 "Reliability evaluation using HTST (High Temperature Storage Test)"
R (R = H (1000) / H): The bonding sample was placed in a 200 ° C. test tank for 1000 hours, and the shear strength H (1000) after 1000 hours was divided by the initial shear strength H (Initial). (Initial) × 100). If R is 80% or more, it is A, 70% or more and less than 80% is B, 60% or more and less than 70% is C, and if it is less than 60%, it is D.
　「ＨＡＳＴ(Highly　Accelerated temperature & humidity Stress Test)による信頼性評価」
　ボンディング試料を130℃／85％ＲＨ（Relative Humidity）の試験槽中に1000時間装入し、1000時間経過後のシェア強度Ｈ(1000)を初期のシェア強度Ｈ(Initial)で除した割合Ｒ(Ｒ=Ｈ(1000)/Ｈ(Initial)×100)を用いて評価した。Ｒが８０％以上ならＡ、６０％以上８０％未満ではＢ、６０％未満ではＤとした。 "Reliability evaluation by HAST (Highly Accelerated temperature & humidity Stress Test)"
The bonding sample was placed in a 130 ° C / 85% RH (Relative Humidity) test tank for 1000 hours, and the shear strength H (1000) after 1000 hours was divided by the initial shear strength H (Initial) R ( R = H (1000) / H (Initial) × 100). If R is 80% or more, it is A, 60% or more and less than 80% is B, and less than 60% is D.
　「ボンディング後、１ｓｔボール接合部直下のチップ損傷の評価」
　ボール接合部および電極膜を王水で溶解し、チップ５のクラックを光学顕微鏡と走査型電子顕微鏡（ＳＥＭ）で観察した。１００個の接合部を観察して５μｍ未満の微小なピットが１個もしくはまったく見られない場合はＡ、５μｍ以上のクラックが２個以上認められた場合をＤとした。 “Evaluation of chip damage directly under the 1st ball joint after bonding”
The ball joint and the electrode film were dissolved with aqua regia, and the chip 5 was observed for cracks with an optical microscope and a scanning electron microscope (SEM). When 100 or less joints were observed and one or no minute pits of less than 5 μm were observed, A and D were two or more cracks of 5 μm or more were observed.
　「電気抵抗」
　４端子法を用いて室温での電気抵抗を測定した。固有抵抗が３．０×１０－８Ω・ｍ未満であれば十分な導電性を有すると考えられるのでＡ、固有抵抗が３.０×１０－８Ω・ｍ以上４.０×１０－８Ω・ｍ未満であればＢ、固有抵抗が４.０×１０－８Ω・ｍ以上であればＤとした。 "Electric resistance"
The electric resistance at room temperature was measured using a four-terminal method. Since resistivity is considered to have a sufficient conductivity is less than 3.0 × 10 -8 Ω · m A , resistivity 3.0 × 10 -8 Ω · m or more 4.0 × 10 -8 If it is less than Ω · m, it is B, and if the specific resistance is 4.0 × 10 −8 Ω · m or more, it is D.
　「総合評価」
　すべてＡのものをＡ、ＡとＢが混在しているものをＢ、Ａ、Ｂ、Ｃが混在しているものをＣ、ひとつでもＤがあるものをＤとした。 "Comprehensive evaluation"
All were A, A was a mixture of A and B, B was a mixture of A, B, and C, and C was a mixture of at least one D.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　この表１、２において、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素の合計重量が５重量ｐｐｍ未満であると、比較例１から、ワイヤフロー評価において「Ｄ」、５００重量ｐｐｍを超えると、同比較例３、５から、ＦＡＢの安定性評価において「Ｄ」となって、共に、総合評価で「Ｄ」となっている。これらの元素を１種しか含有しない場合は、比較例２から、ワイヤフロー評価において「Ｄ」となって総合評価で「Ｄ」となっている。
　また、Ｐｄ、Ａｕから選ばれる１種以上の元素の合計重量が０．５重量％未満であると、比較例４から、ＨＴＳＴ、ＨＡＳＴ評価において「Ｄ」、５．０重量％を超えると、比較例５から、ＦＡＢの安定性、チップ損傷、電気抵抗の評価において「Ｄ」となって総合評価で「Ｄ」となっている。 In Tables 1 and 2, when the total weight of two or more elements selected from Ca, Cu, Gd, and Sm is less than 5 ppm by weight, from Comparative Example 1, “D”, 500 ppm by weight in wire flow evaluation If it exceeds, from Comparative Examples 3 and 5, it becomes “D” in the stability evaluation of FAB, and both are “D” in the overall evaluation. When only one of these elements is contained, it is “D” in the wire flow evaluation and “D” in the comprehensive evaluation from Comparative Example 2.
Further, when the total weight of one or more elements selected from Pd and Au is less than 0.5% by weight, from Comparative Example 4, when HTST and HAST evaluation exceeds “D”, 5.0% by weight, From Comparative Example 5, the evaluation is “D” in the evaluation of FAB stability, chip damage, and electrical resistance, and is “D” in the comprehensive evaluation.
　これに対し、各実施例１～２１は、いずれも、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素を合計５～５００重量ｐｐｍ含み、Ｐｄ、Ａｕから選ばれる１種以上の元素を０．５～５．０重量％含んでいることから、総合評価において、「Ｃ」以上を得て、実用上問題ない評価を得ている。
　その各実施例において、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素の内、Ｃａを含み、かつＧｄとＳｍの少なくとも一方を含んで（表１中、Ｃａ＋（Ｇｄ＋Ｓｍ））その合計が１０重量ｐｐｍ以上であって、Ｐｄを含むと、実施例１～４から、総合評価において、「Ａ」以上を得ている。 In contrast, each of Examples 1 to 21 includes a total of 5 to 500 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and one or more elements selected from Pd and Au. In the overall evaluation, “C” or more was obtained, and evaluation with no practical problem was obtained.
In each of the examples, out of two or more elements selected from Ca, Cu, Gd, and Sm, Ca is included, and at least one of Gd and Sm is included (in Table 1, Ca + (Gd + Sm)). Is 10 wt ppm or more, and when Pd is contained, “A” or more is obtained in Examples 1 to 4 in the comprehensive evaluation.
　また、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素の合計が１０重量ｐｐｍ以上であれば、実施例５～１７から、Ｐｄの含有に関係なく、総合評価において、「Ｂ」以上を得ている。
　その総合評価Ｂを得た実施例において、Ｃａを含み、かつＧｄとＳｍの少なくとも一方を含んでそのＣａ＋（Ｇｄ＋Ｓｍ）の合計が１０重量ｐｐｍ以上であると、実施例５、１０、１１において、ワイヤフローが「Ａ」となっていることから、高いワイヤ強度を得られることが理解できる。 Further, when the total of two or more elements selected from Ca, Cu, Gd, and Sm is 10 ppm by weight or more, from Examples 5 to 17, “B” or more is obtained in the comprehensive evaluation regardless of the content of Pd. Have gained.
In Examples where the overall evaluation B was obtained, when Ca was included and at least one of Gd and Sm was included and the total of Ca + (Gd + Sm) was 10 ppm by weight or more, in Examples 5, 10, and 11, Since the wire flow is “A”, it can be understood that high wire strength can be obtained.
　さらに、Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素を１０～３００重量ｐｐｍ含み、Ｐｄ、Ａｕから選ばれる１種以上の元素を０．７～３．０重量％含んでいると、実施例１～８、１２、１７から、良好なＦＡＢを安定して得られることが理解することができる。 Furthermore, it contains 10 to 300 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and 0.7 to 3.0% by weight of one or more elements selected from Pd and Au. From Examples 1 to 8, 12, and 17, it can be understood that good FAB can be stably obtained.
　なお、このボンディングワイヤＷにおいても、この発明の作用効果を得ることができる限りにおいて、上記特許文献１のように、Ａｕ、Ｐｔ、Ｐｄ、Ｎｉ等からなる、例えば厚み：０．０２～０．０９μｍの被覆層を形成したものとし得る。Ａｕ、Ｐｄを被覆する場合、上記０．５～５．０重量％のＰｄ、Ａｕの添加をしないようにすることもできる。 In this bonding wire W, as long as the effects of the present invention can be obtained, it is made of Au, Pt, Pd, Ni, etc. as in Patent Document 1, for example, thickness: 0.02 to 0.00. A 09 μm coating layer may be formed. When Au or Pd is coated, the addition of 0.5 to 5.0% by weight of Pd and Au can be avoided.
Ｐ　ボンディング用ワイヤ
ａ　集積回路素子の電極
ｂ　溶融ボール
ｂ’　圧着ボール
ｃ　回路配線基板の導体配線 P Bonding wire a Electrode b of integrated circuit element Molten ball b 'Crimp ball c Conductor wiring of circuit wiring board

Claims (4)

  1. 　半導体素子のＮｉ／Ｐｄ／Ａｕ被覆された電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するためのボンディング用ワイヤ（Ｗ）であって、
    　Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素を合計で５～５００重量ｐｐｍ含み、Ｐｄ、Ａｕから選ばれる１種以上の元素を合計で０．５～５．０重量％含んで、それ以外がＡｇ及び不可避不純物からなることを特徴とするボールボンディング用ワイヤ。     A bonding wire (W) for connecting a Ni / Pd / Au coated electrode (a) of a semiconductor element and a conductor wiring (c) of a circuit wiring board by a ball bonding method,
    Contains a total of 2 to 500 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and a total of 0.5 to 5.0% by weight of one or more elements selected from Pd and Au. A wire for ball bonding, wherein the other consists of Ag and inevitable impurities.
  2. 　上記Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素を合計で１０～３００重量ｐｐｍ含み、Ｐｄ、Ａｕから選ばれる１種以上の元素を合計で０．７～３．０重量％含んでいることを特徴とする請求項１記載のボールボンディング用ワイヤ。 Contains a total of 10 to 300 ppm by weight of two or more elements selected from Ca, Cu, Gd, and Sm, and a total of 0.7 to 3.0% by weight of one or more elements selected from Pd and Au. The ball bonding wire according to claim 1, wherein
  3. 　上記Ｃａ、Ｃｕ、Ｇｄ、Ｓｍから選ばれる２種以上の元素の内、Ｃａを含み、かつＧｄとＳｍの少なくとも一方を含んで、その合計が１０重量ｐｐｍ以上であること特徴とする請求項１又は２に記載のボールボンディング用ワイヤ。 2. The total of 10 ppm by weight or more including Ca and at least one of Gd and Sm among two or more elements selected from Ca, Cu, Gd, and Sm. Or the wire for ball bonding of 2.
  4. 　Ｐｄ、Ａｕから選ばれる１種以上の元素は、Ｐｄを必ず含有することを特徴とする請求項３に記載のボールボンディング用ワイヤ。 4. The ball bonding wire according to claim 3, wherein at least one element selected from Pd and Au always contains Pd.
PCT/JP2011/077765 2011-01-20 2011-12-01 Wire for ball bonding WO2012098771A1 (en)

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JP5996853B2 (en) * 2011-08-29 2016-09-21 タツタ電線株式会社 Ball bonding wire
JP6103806B2 (en) * 2011-12-26 2017-03-29 タツタ電線株式会社 Ball bonding wire
JP5671512B2 (en) * 2012-11-07 2015-02-18 タツタ電線株式会社 Bonding wire
JP5529992B1 (en) * 2013-03-14 2014-06-25 タツタ電線株式会社 Bonding wire
JP5420783B1 (en) 2013-04-05 2014-02-19 田中電子工業株式会社 Bonding wire for high-speed signal lines
JP5399581B1 (en) * 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
JP6343197B2 (en) * 2014-07-16 2018-06-13 タツタ電線株式会社 Bonding wire
SG10201607523RA (en) * 2016-09-09 2018-04-27 Heraeus Materials Singapore Pte Ltd Coated wire

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CN108701622A (en) * 2016-03-11 2018-10-23 拓自达电线株式会社 Closing line
CN108701622B (en) * 2016-03-11 2021-12-10 拓自达电线株式会社 Bonding wire

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