WO2012091275A1 - Diode électroluminescente et son procédé de fabrication - Google Patents

Diode électroluminescente et son procédé de fabrication Download PDF

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Publication number
WO2012091275A1
WO2012091275A1 PCT/KR2011/008243 KR2011008243W WO2012091275A1 WO 2012091275 A1 WO2012091275 A1 WO 2012091275A1 KR 2011008243 W KR2011008243 W KR 2011008243W WO 2012091275 A1 WO2012091275 A1 WO 2012091275A1
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nitride semiconductor
semiconductor layer
type nitride
type
phosphor
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PCT/KR2011/008243
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English (en)
Korean (ko)
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WO2012091275A8 (fr
Inventor
이종람
송양희
김범준
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포항공과대학교 산학협력단
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Publication of WO2012091275A1 publication Critical patent/WO2012091275A1/fr
Publication of WO2012091275A8 publication Critical patent/WO2012091275A8/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the present invention relates to a light emitting diode and a method of manufacturing the same. More specifically, the present invention relates to a light emitting diode having a novel structure and a method of manufacturing the same, which can significantly increase the phosphor coating area of the present invention.
  • the white light source gallium nitride-based light emitting diodes have various forms of energy conversion efficiency, long life, high light directivity, low voltage driving, no preheating time and complicated driving circuit, and strong against shock and vibration. It is expected to be a solid-state lighting source that will replace the existing light sources such as incandescent lamps, fluorescent lamps and mercury lamps within the next five years due to the implementation of high quality lighting systems.
  • a gallium nitride-based light emitting diode In order to use a gallium nitride-based light emitting diode as a white light source to replace a mercury lamp or a fluorescent lamp, it must not only have excellent thermal stability but also be able to emit high power at low power consumption. In order to emit light of high power, researches are being conducted to change the structure of the light emitting diodes.
  • Horizontal gallium nitride-based light emitting diodes which are widely used as white light sources, have the advantages of relatively low manufacturing cost and simple manufacturing process. have.
  • a vertical structure light emitting diode is a device that overcomes the disadvantages of the horizontal structure light emitting diode and is easy to apply a large area high power light emitting diode.
  • Such vertical structured light emitting diodes have various advantages compared to conventional horizontal structured devices.
  • the current spreading resistance is small, so a very uniform current spreading can be obtained, resulting in a lower operating voltage and a large light output, and a smooth heat dissipation through a metal or semiconductor substrate having good thermal conductivity. Long device life and significantly improved high power operation are possible.
  • the maximum applied current is increased by 3-4 or more compared to the horizontal structured light emitting diode, so it is certain that it will be widely used as a white light source for lighting.
  • Nichia chemical company in Japan Philips Lumileds company in USA, Osram company in Germany Leading overseas light emitting diode companies and domestic companies such as Seoul Semiconductor, Samsung Electro-Mechanics and LG Innotek are actively conducting R & D to commercialize gallium nitride-based vertical light emitting diodes and improve their performance. Selling products.
  • the phosphor is applied in the package step after the chip fabrication step.
  • the phosphor absorbs the light emitted from the chip and emits light of different wavelengths, and the light conversion efficiency of the phosphor is very important for making a white light source.
  • the light conversion efficiency of the phosphor and the light conversion efficiency of the phosphor must be improved simultaneously.
  • the phosphor is coated on the outside of the chip, the phosphor coating area is small, and the phosphor is significantly separated from the MQW where light is generated. For this reason, many researches have been conducted on the structure of the light emitting diode for disposing the light emitting MQW and the phosphor in the vicinity of the phosphor coating area, but there is no clear research result.
  • the present invention has been made in an effort to provide a light emitting diode having a novel structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescent conversion efficiency of a phosphor.
  • the light emitting diode according to an aspect of the present invention for solving this problem is a p-type electrode formed on a conductive substrate, a p-type nitride semiconductor layer formed on the p-type electrode, an active layer formed on the p-type nitride semiconductor layer, An n-type nitride semiconductor layer formed on the active layer and an n-type electrode formed on the n-type nitride semiconductor layer, and an uneven portion is formed in a portion of the n-type nitride semiconductor layer, and the n-type electrode is It is formed on the convex part of the uneven part formed in the n-type nitride semiconductor layer, and the recessed part of the uneven part formed in the said n-type nitride semiconductor layer is filled with fluorescent substance.
  • the light emitting diode is characterized in that it further comprises a transparent electrode formed between the n-type nitride semiconductor layer and the n-type electrode.
  • the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
  • the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.
  • a light emitting diode further comprising a protective film formed between the recessed portion and the phosphor formed in the n-type nitride semiconductor layer.
  • the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
  • the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.
  • the light emitting diode there are two or more kinds of phosphors filled in the recessed portions of the uneven portion, and a fret phosphor converting thermal energy into visible light is filled in the recessed region adjacent to the active layer. do.
  • a light emitting diode includes a substrate on which a pattern for scattering and reflecting incident light is formed, formed on the substrate, and having a step with the first region and the first region and exposed to the outside.
  • An n-type nitride semiconductor layer including a second region, an active layer formed on the first region of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, and formed on a second region of the n-type nitride semiconductor layer and an p-type electrode formed on the n-type electrode and the p-type nitride semiconductor layer, wherein the uneven portion penetrates through the p-type nitride semiconductor layer and the active layer and is formed in a partial region of the n-type nitride semiconductor layer.
  • the main recess is characterized in that the phosphor is filled.
  • the light emitting diode further comprises a transparent electrode formed between the p-type nitride semiconductor layer and the p-type electrode.
  • the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
  • the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.
  • the light emitting diode in another aspect of the present invention, it characterized in that it further comprises a protective film formed between the recessed portion and the phosphor.
  • the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
  • the light emitting diode there are at least two kinds of phosphors filled in the recessed portions of the uneven portion, and a fret phosphor converting thermal energy into visible light is filled in the recessed region adjacent to the active layer. do.
  • a light emitting diode manufacturing method in which a p-type electrode, a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer are formed on a conductive substrate.
  • a second step of forming an uneven portion a third step of filling a phosphor in the uneven portion of the uneven portion, a fourth step of forming a transparent electrode on the convex portion of the n-type nitride semiconductor layer and the phosphor and on the n-type nitride semiconductor layer and a fifth step of forming an n-type electrode.
  • the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.
  • a light emitting diode there are two or more kinds of phosphors filled in the recessed portions of the uneven portion, and a fret phosphor that converts thermal energy into visible light is filled in the recessed region adjacent to the active layer. It features.
  • a light emitting diode manufacturing method comprising: forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed; a second step of mesa etching a portion of the p-type nitride semiconductor layer, the light emitting layer, and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer, and penetrating the n-type nitride semiconductor layer and the active layer
  • a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescence conversion efficiency of a phosphor.
  • the present invention is a device technology made by inserting a phosphor into a pillar-type or hole-type light emitting diode fabricated by dry etching after forming a pattern using a photolithography and nanoimprint method capable of a large area process It is immediately applicable to the manufacturing process of light emitting diodes.
  • the light emitting diode has a low fluorescence efficiency because the phosphor is coated on the periphery of the chip after chip formation, and the phosphor coating area is narrow and is far from the MQW generated by the light.
  • the phosphor is coated.
  • FIG. 1 is a view showing a light emitting diode according to a first embodiment of the present invention.
  • FIGS. 2 and 3 are views showing a modification of the first embodiment of the present invention.
  • FIG. 4 is a view showing a light emitting diode according to a second embodiment of the present invention.
  • FIG. 5 is a view showing a modification of the second embodiment of the present invention.
  • 6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
  • 15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.
  • FIG. 1 is a view showing a light emitting diode according to a first embodiment of the present invention
  • Figure 2 and Figure 3 is a view showing a modification of the first embodiment of the present invention.
  • the light emitting diode according to the first embodiment of the present invention is a conductive substrate 100, p-type electrode 110, p-type nitride semiconductor layer 120, active layer 130, n-type
  • the nitride semiconductor layer 140, the passivation layer 150, the phosphor 160, the transparent electrode 170, and the n-type electrode 180 are configured to be included.
  • the p-type electrode 110 is formed on the conductive substrate 100.
  • the p-type electrode 110 is also conductive and also functions as a reflective film that reflects light emitted from the active layer 130 described later.
  • the p-type nitride semiconductor layer 120 is formed on the p-type electrode 110.
  • the p-type nitride semiconductor layer 120 may be GaN doped with a p-type.
  • the active layer 130 that is, the multi quantum well (MQW) layer, is formed between the p-type nitride semiconductor layer 120 and the n-type nitride semiconductor layer 140, which will be described later with the p-type electrode 110.
  • the excitons generated by the combination of electrons and holes according to the potential difference applied through the n-type electrode 180 emit light.
  • the n-type nitride semiconductor layer 140 is formed on the active layer 130 and may be n-type doped GaN.
  • Uneven portions are formed in some regions of the n-type nitride semiconductor layer 140.
  • This uneven part is comprised by the uneven part which is the recessed area
  • the recessed portion may be formed to almost penetrate the n-type nitride semiconductor layer 140, that is, the portion directly above the active layer 130.
  • the recessed portion may be formed in a portion of the p-type nitride semiconductor layer 121 through the n-type nitride semiconductor layer 141 and the active layer 131. . That is, the recessed portion may be formed up to the portion directly above the p-type electrode 110.
  • the phosphor 160 is filled in the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer 140. That is, by forming the uneven portion as described above and filling the phosphor 160 in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.
  • the phosphor filled in the recessed portion may be two or more kinds.
  • the active layer ( The recessed portion A adjacent to 131 is preferably filled with a fret phosphor that converts thermal energy into visible light. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.
  • the transparent electrode 170 is formed between the n-type nitride semiconductor layer 140 and the n-type electrode 180.
  • the transparent electrode 170 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
  • any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 170.
  • the thickness of the transparent electrode 170 is preferably 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 170 is less than 10 nm, it may not function properly as an electrode for flowing current. If the thickness of the transparent electrode 170 exceeds 300 nm, the light transmittance may be deteriorated.
  • the n-type electrode 180 is formed on the n-type nitride semiconductor layer 140 and may be formed on, for example, the convex portion of the uneven portion to increase light transmittance.
  • the first embodiment of the present invention may further include a passivation layer 150, and the passivation layer 150 is formed between the recessed portions of the uneven portions formed in the n-type nitride semiconductor layer 140 and the phosphor 160. , to protect the n-type nitride semiconductor layer 140.
  • the passivation layer 150 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
  • FIG. 4 is a view showing a light emitting diode according to a second embodiment of the present invention
  • Figure 5 is a view showing a modification of a second embodiment of the present invention.
  • the light emitting diode according to the second embodiment of the present invention is a substrate 200, n-type nitride semiconductor layer 210, active layer 220, p-type nitride semiconductor layer 230, transparent
  • the electrode 260 may be configured to include an n-type electrode 280 and a p-type electrode 270.
  • the substrate 200 is formed with a pattern for scattering and reflecting light incident from the active layer 220 to be described later.
  • the substrate 200 may be made of sapphire (Al 2 O 3).
  • the n-type nitride semiconductor layer 210 is formed on the substrate 200 and includes a first region and a second region.
  • the first region is a region where the active layer 220 to be described later is formed.
  • the second region is a region having a step with the first region and exposed to the outside.
  • the active layer 220 is formed on the first region of the n-type nitride semiconductor layer 210.
  • the p-type nitride semiconductor layer 230 is formed on the active layer 220.
  • the transparent electrode 260 is formed between the p-type nitride semiconductor layer 230 and the p-type electrode 270 described later.
  • the transparent electrode 260 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
  • any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 260.
  • the thickness of the transparent electrode 260 is 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 260 is less than 10 nm, it does not function properly as an electrode for flowing current. If the thickness of the transparent electrode 260 exceeds 300 nm, the light transmittance is reduced.
  • the n-type electrode 280 is formed on the second region of the n-type nitride semiconductor layer 210, and the p-type electrode 270 is formed on the p-type nitride semiconductor layer 230 via the transparent electrode 260. Formed.
  • the uneven portion which is a feature of the second embodiment of the present invention, extends through the p-type nitride semiconductor layer 230 and the active layer 220 to a part of the n-type nitride semiconductor layer 210, and the recessed portion has a phosphor ( 250) is filled.
  • the phosphors 251 there may be two or more kinds of phosphors 251 filled in recesses of the uneven portion, and a fret for converting thermal energy into visible light in the recessed region B adjacent to the active layer 220. It is preferable that the phosphor is filled. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.
  • the second embodiment of the present invention may further include a passivation layer 240, and the passivation layer 240 is formed between the recessed portion and the phosphor 250 formed in the n-type nitride semiconductor layer 210. , to protect the n-type nitride semiconductor layer 210.
  • the passivation layer 240 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
  • 6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
  • a light emitting diode manufacturing method includes a p-type electrode 110, a p-type nitride semiconductor layer 120, and an active layer 130 on a conductive substrate 100.
  • a first step of forming the n-type nitride semiconductor layer 140 a second step of forming an uneven portion in a portion of the n-type nitride semiconductor layer 140, a third step of filling the phosphor 160 in the uneven portion of the uneven portion, a fourth step of forming the transparent electrode 170 on the convex portion of the n-type nitride semiconductor layer 140 and the phosphor 160 and a fifth step of forming the n-type electrode 180 on the n-type nitride semiconductor layer 140. It consists of steps.
  • the p-type electrode 110, the p-type nitride semiconductor layer 120, the active layer 130, and the n-type nitride semiconductor layer 140 are formed on the conductive substrate 100.
  • the process is performed.
  • the dry etching protective film M is used as a mask to form n-type.
  • a process of forming an uneven portion in a portion of the nitride semiconductor layer 140 is performed. This uneven portion is composed of a recessed area and a recessed area.
  • the concave portion of the concave-convex portion may be formed to almost penetrate the n-type nitride semiconductor layer 140, that is, to the portion directly above the active layer 130.
  • a process of filling the phosphor 160 with recesses of the uneven portion is performed.
  • a protective film 150 for protecting the n-type nitride semiconductor layer 140 is formed on the recessed portion, and then the phosphor 160 is filled.
  • the passivation layer 150 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , and GaO X.
  • the n-type electrode 180 may be formed directly on the n-type nitride semiconductor layer 140, but as shown in FIG. 12, it is preferable to first form the transparent electrode 170.
  • a process of forming the transparent electrode 170 on the convex portion and the phosphor of the n-type nitride semiconductor layer 140 is performed.
  • the transparent electrode 170 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
  • any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 170.
  • the thickness of the transparent electrode 170 is preferably 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 170 is less than 10 nm, it may not function properly as an electrode for flowing current. If the thickness of the transparent electrode 170 exceeds 300 nm, the light transmittance may be deteriorated.
  • a process of forming the n-type electrode 180 on the n-type nitride semiconductor layer 140 via the transparent electrode 170 is performed.
  • the n-type electrode 180 may be formed on the convex portion of the uneven portion to increase light transmittance.
  • the recessed portion may be formed in a portion of the p-type nitride semiconductor layer 121 through the n-type nitride semiconductor layer 141 and the active layer 131. That is, the recessed portion may be formed up to the portion directly above the p-type electrode 110.
  • the phosphor 160 is filled in the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer 140. That is, by forming the uneven portion as described above and filling the phosphor 160 in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.
  • the phosphor filled in the recessed portion may be two or more kinds.
  • the active layer ( The recessed portion adjacent to 131 is preferably filled with a fret phosphor that converts thermal energy into visible light. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.
  • 15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.
  • an n-type nitride semiconductor layer 210 is formed on a substrate 200 on which a pattern for scattering and reflecting incident light is formed.
  • a first step of forming the light emitting layer and the p-type nitride semiconductor layer 230, mesa-etched a portion of the p-type nitride semiconductor layer 230, the light emitting layer and the n-type nitride semiconductor layer 210 to n-type nitride semiconductor layer ( The second step of exposing a portion of the 210, the third step of forming the uneven portion through the p-type nitride semiconductor layer 230 and the active layer 220 to the partial region of the n-type nitride semiconductor layer 210, recessed portion Filling the phosphor in the fourth step, forming the transparent electrode 260 on the convex portion of the p-type nitride semiconductor layer 230
  • an n-type nitride semiconductor layer 210, a light emitting layer, and a p-type nitride semiconductor layer 230 are formed on a substrate 200 on which a pattern for scattering and reflecting incident light is formed. ) Is carried out.
  • a portion of the p-type nitride semiconductor layer 230, the active layer 220, and the n-type nitride semiconductor layer 210 may be mesa-etched to form the n-type nitride semiconductor layer 210.
  • the process of exposing a part to the outside is performed.
  • a process of forming the uneven portion through the p-type nitride semiconductor layer 230 and the active layer 220 to a part of the n-type nitride semiconductor layer 210 is performed.
  • This uneven part consists of a uneven part and an uneven part.
  • the recess is the recessed area, and the convex part is the protruding area.
  • the recessed portion may be formed up to a portion directly above the p-type electrode 270.
  • the phosphor is filled in the recessed portion of the uneven portion. That is, by forming the uneven portion as described above, and filling the phosphor in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.
  • the phosphor filled in the recessed portion may be two or more kinds, and the recessed portion is formed in the partial region of the p-type nitride semiconductor layer 230 through the n-type nitride semiconductor layer 210 and the active layer 220 In the recess region adjacent to the active layer 220, a fret phosphor for converting thermal energy into visible light is preferably filled. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.
  • a process of forming the transparent electrode 260 on the convex portion and the phosphor of the p-type nitride semiconductor layer 230 is performed.
  • the p-type electrode 270 is formed on the transparent electrode 260, and the n-type electrode 280 is formed on the exposed region of the n-type nitride semiconductor layer 210. The process is performed.

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Abstract

La présente invention concerne une diode électroluminescente et son procédé de fabrication. La diode électroluminescente de la présente invention comprend : une électrode de type p formée sur un substrat conducteur ; une couche semi-conductrice au nitrure de type p formée sur l'électrode de type p ; une couche active formée sur le semi-conducteur au nitrure de type p ; une couche semi-conductrice au nitrure de type n formée sur la couche active ; et une électrode de type n formée sur la couche semi-conductrice au nitrure de type n. La couche semi-conductrice au nitrure de type n présentant sur certaines de ses zones une partie concavo-convexe, l'électrode de type n est formée sur la partie convexe de la partie concavo-convexe formée sur la couche semi-conductrice au nitrure de type n, et la partie concave de la partie concavo-convexe formée sur la couche semi-conductrice au nitrure de type n est remplie d'un corps fluorescent. La présente invention fournit une diode électroluminescente présentant une nouvelle structure pouvant augmenter considérablement la superficie de revêtement du corps fluorescent et l'efficacité de conversion de fluorescence, et son procédé de fabrication.
PCT/KR2011/008243 2010-12-30 2011-11-01 Diode électroluminescente et son procédé de fabrication WO2012091275A1 (fr)

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KR10-2010-0139624 2010-12-30
KR1020100139624A KR101291153B1 (ko) 2010-12-30 2010-12-30 발광다이오드 및 그 제조방법

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