WO2012083944A3 - Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche - Google Patents

Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche Download PDF

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Publication number
WO2012083944A3
WO2012083944A3 PCT/DE2011/075306 DE2011075306W WO2012083944A3 WO 2012083944 A3 WO2012083944 A3 WO 2012083944A3 DE 2011075306 W DE2011075306 W DE 2011075306W WO 2012083944 A3 WO2012083944 A3 WO 2012083944A3
Authority
WO
WIPO (PCT)
Prior art keywords
rear side
silicon solar
solar cells
producing silicon
texture
Prior art date
Application number
PCT/DE2011/075306
Other languages
English (en)
French (fr)
Other versions
WO2012083944A2 (de
Inventor
Adolf MÜNZER
Andreas Teppe
Jan Schöne
Mathias Hein
Jens KRÜMBERG
Sandra KRÜMBERG
Original Assignee
Centrotherm Photovoltaics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Ag filed Critical Centrotherm Photovoltaics Ag
Priority to US13/993,757 priority Critical patent/US20140051199A1/en
Priority to CN201180067305.9A priority patent/CN103354954B/zh
Priority to EP11830092.0A priority patent/EP2652802A2/de
Publication of WO2012083944A2 publication Critical patent/WO2012083944A2/de
Publication of WO2012083944A3 publication Critical patent/WO2012083944A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

Verfahren zur Herstellung einer einseitig glattgeätzten Siliziumsolarzelle, bei welchem eine Vorderseite und eine Rückseite eines Siliziumsubstrats glattgeätzt werden (10), nachfolgend eine dielektrische Beschichtung auf der Rückseite des Siliziumsubstrats ausgebildet wird (14, 16) und nachfolgend die Vorderseite des Siliziumsubstrats mittels eines Texturätzmediums texturiert wird (20), wobei die auf der Rückseite des Siliziumsubstrats ausgebildete dielektrische Beschichtung als Ätzmaskierung gegenüber dem Texturätzmedium verwendet wird.
PCT/DE2011/075306 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche WO2012083944A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/993,757 US20140051199A1 (en) 2010-12-13 2011-12-09 Method for producing silicon solor cells having a front-sided texture and a smooth rear side
CN201180067305.9A CN103354954B (zh) 2010-12-13 2011-12-09 制作具有正面纹理和平滑背面表面的硅太阳能电池的方法
EP11830092.0A EP2652802A2 (de) 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010054370.5 2010-12-13
DE102010054370A DE102010054370A1 (de) 2010-12-13 2010-12-13 Verfahren zur Herstellung von Siliziumsolarzellen mit vorderseitiger Textur und glatter Rückseitenoberfläche

Publications (2)

Publication Number Publication Date
WO2012083944A2 WO2012083944A2 (de) 2012-06-28
WO2012083944A3 true WO2012083944A3 (de) 2012-11-01

Family

ID=45922620

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075306 WO2012083944A2 (de) 2010-12-13 2011-12-09 Verfahren zur herstellung von siliziumsolarzellen mit vorderseitiger textur und glatter rückseitenoberfläche

Country Status (5)

Country Link
US (1) US20140051199A1 (de)
EP (1) EP2652802A2 (de)
CN (1) CN103354954B (de)
DE (1) DE102010054370A1 (de)
WO (1) WO2012083944A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180114691A1 (en) * 2013-08-07 2018-04-26 SolarWorld Americas, Inc. Methods for etching as-cut silicon wafers and producing solar cells
US20150040983A1 (en) * 2013-08-07 2015-02-12 Solarworld Industries America, Inc. Acidic etching process for si wafers
US9837259B2 (en) * 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
JP6513788B2 (ja) * 2015-03-24 2019-05-15 株式会社カネカ 結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法
CN107658367A (zh) * 2016-07-26 2018-02-02 福建金石能源有限公司 一种异质结电池的湿化学处理方法
DE102018206978A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Behandlung von geätzten Oberflächen eines Halbleitersubstrats unter Verwendung von ozonhaltigem Medium
DE102018206980A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Reinigung von geätzten Oberflächen eines Halbleitersubstrats

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
WO2009067483A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090280597A1 (en) * 2008-03-25 2009-11-12 Kapila Wijekoon Surface cleaning and texturing process for crystalline solar cells
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask

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US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US8876963B2 (en) * 2007-10-17 2014-11-04 Heraeus Precious Metals North America Conshohocken Llc Dielectric coating for single sided back contact solar cells
KR101168589B1 (ko) * 2008-03-26 2012-07-30 엘지전자 주식회사 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
WO2010025262A2 (en) * 2008-08-27 2010-03-04 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
EP2327106A4 (de) * 2008-09-16 2015-09-30 Lg Electronics Inc Solarzelle und verfahren zu ihrer texturierung
DE102008056086A1 (de) * 2008-11-06 2010-05-12 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung
US20110298100A1 (en) * 2009-02-05 2011-12-08 Kyotaro Nakamura Semiconductor device producing method and semiconductor device
KR20120045424A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 태양전지 제조방법
US8664015B2 (en) * 2011-10-13 2014-03-04 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
US9412895B2 (en) * 2012-04-04 2016-08-09 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
WO2009067483A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090280597A1 (en) * 2008-03-25 2009-11-12 Kapila Wijekoon Surface cleaning and texturing process for crystalline solar cells
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SZLUFCIK J ET AL: "Low-Cost Industrial Technologies of Crystalline Silicon Solar Cells", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 85, no. 5, 1 May 1997 (1997-05-01), pages 711 - 730, XP011043842, ISSN: 0018-9219, DOI: 10.1109/5.588971 *

Also Published As

Publication number Publication date
CN103354954A (zh) 2013-10-16
US20140051199A1 (en) 2014-02-20
WO2012083944A2 (de) 2012-06-28
CN103354954B (zh) 2016-06-29
EP2652802A2 (de) 2013-10-23
DE102010054370A1 (de) 2012-06-14

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