WO2012080428A3 - Verfahren zum herstellen von elektrisch leitenden kontakten auf solarzellen sowie solarzelle - Google Patents

Verfahren zum herstellen von elektrisch leitenden kontakten auf solarzellen sowie solarzelle Download PDF

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Publication number
WO2012080428A3
WO2012080428A3 PCT/EP2011/072978 EP2011072978W WO2012080428A3 WO 2012080428 A3 WO2012080428 A3 WO 2012080428A3 EP 2011072978 W EP2011072978 W EP 2011072978W WO 2012080428 A3 WO2012080428 A3 WO 2012080428A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
solar cells
conductive contacts
solar cell
producing electrically
Prior art date
Application number
PCT/EP2011/072978
Other languages
English (en)
French (fr)
Other versions
WO2012080428A2 (de
Inventor
Henning Nagel
Wilfried Schmidt
Original Assignee
Schott Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to CN201180060814.9A priority Critical patent/CN103339746B/zh
Priority to EP11804998.0A priority patent/EP2652803A2/de
Priority to US13/994,841 priority patent/US20140000698A1/en
Publication of WO2012080428A2 publication Critical patent/WO2012080428A2/de
Publication of WO2012080428A3 publication Critical patent/WO2012080428A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Die Erfindung bezieht sich auf ein Verfahren zum Herstellen von aus elektrisch leitendem Material bestehenden Kontakten auf eine Gruppe von Solarzellen, wobei beim Laseraufstrahlungsschritt der selektiven Emitter ein Pulsenergiedichtebereich des Laserstrahls benutzt wird, bei dem der Schichtwiderstand ρSH im gelaserten Bereich zwischen 0 % und 30 % im Vergleich zum Schichtwiderstand außerhalb des gelaserten Bereichs reduziert ist und der spezifische Kontaktwiderstand zwischen dem gelaserten Bereich und dem auf diesem aufgebrachten elektrisch leitendem Material zur Bildung des elektrisch leitenden Kontakts zwischen 0 mΩcm2 und 10 mΩcm2 liegt.
PCT/EP2011/072978 2010-12-16 2011-12-15 Verfahren zum herstellen von elektrisch leitenden kontakten auf solarzellen sowie solarzelle WO2012080428A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180060814.9A CN103339746B (zh) 2010-12-16 2011-12-15 用于制造太阳能电池上的导电接触部的方法及太阳能电池
EP11804998.0A EP2652803A2 (de) 2010-12-16 2011-12-15 Verfahren zum herstellen von elektrisch leitenden kontakten auf solarzellen sowie solarzelle
US13/994,841 US20140000698A1 (en) 2010-12-16 2011-12-15 Method for producing electrically conductive contacts on solar cells, and solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010061296A DE102010061296A1 (de) 2010-12-16 2010-12-16 Verfahren zum Herstellen von elektrisch leitenden Kontakten auf Solarzellen sowie Solarzelle
DE102010061296.0 2010-12-16

Publications (2)

Publication Number Publication Date
WO2012080428A2 WO2012080428A2 (de) 2012-06-21
WO2012080428A3 true WO2012080428A3 (de) 2013-01-24

Family

ID=45446006

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/072978 WO2012080428A2 (de) 2010-12-16 2011-12-15 Verfahren zum herstellen von elektrisch leitenden kontakten auf solarzellen sowie solarzelle

Country Status (5)

Country Link
US (1) US20140000698A1 (de)
EP (1) EP2652803A2 (de)
CN (1) CN103339746B (de)
DE (1) DE102010061296A1 (de)
WO (1) WO2012080428A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006624A1 (de) * 2011-04-01 2012-10-04 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
US20150121204A1 (en) * 2013-10-28 2015-04-30 Kobo Incorporated Method and system for a visual indicator a displayed page enablement for guided reading
US10585576B2 (en) * 2015-10-26 2020-03-10 Google Llc Systems and methods for attributing a scroll event in an infinite scroll graphical user interface

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189015A1 (en) * 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP2073275A2 (de) * 2007-12-21 2009-06-24 Palo Alto Research Center Incorporated Metallisierungskontaktstrukturen und Verfahren zum Bilden von Mehrschichtelektrodenstrukturen für Siliciumsolarzellen
EP2216800A2 (de) * 2009-02-05 2010-08-11 SNT Co., Ltd. Verfahren zur Bildung eines selektiven Emitters einer Solarzelle und Diffusionsvorrichtung zu deren Bildung

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US4147563A (en) 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
JP2000031488A (ja) * 1997-08-26 2000-01-28 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
FR2775280B1 (fr) * 1998-02-23 2000-04-14 Saint Gobain Vitrage Procede de gravure d'une couche conductrice
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
WO2003046659A1 (en) * 2001-11-27 2003-06-05 Hoya Corporation Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US7485245B1 (en) * 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189015A1 (en) * 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP2073275A2 (de) * 2007-12-21 2009-06-24 Palo Alto Research Center Incorporated Metallisierungskontaktstrukturen und Verfahren zum Bilden von Mehrschichtelektrodenstrukturen für Siliciumsolarzellen
EP2216800A2 (de) * 2009-02-05 2010-08-11 SNT Co., Ltd. Verfahren zur Bildung eines selektiven Emitters einer Solarzelle und Diffusionsvorrichtung zu deren Bildung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. OKANOVIC, U. JÄGER, M. AHRENS, U. STUTE, A. GROHE, R. PREU: "Influence of different laser parameters in laser doping from phosphosilicate glass", THE COMPILED STATE-OF-THE-ART OF PV SOLAR TECHNOLOGY AND DEPLOYMENT : 24TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE AND EXHIBITION ; CONFERENCE 21 - 25 SEPTEMBER 2009, EXHIBITION 21 - 24 SEPTEMBER 2009, HAMBURG ; PROCEEDINGS ; EU PVSEC, WIP-RENE, 21 September 2009 (2009-09-21) - 25 September 2009 (2009-09-25), pages 1771 - 1774, XP040530035, ISBN: 978-3-936338-25-6 *
OESTERLIN P ET AL: "High throughput laser doping for selective emitter crystalline Si solar cells", ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS (RTP), 2010 18TH INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 28 September 2010 (2010-09-28), pages 146 - 153, XP031791719, ISBN: 978-1-4244-8400-3 *

Also Published As

Publication number Publication date
EP2652803A2 (de) 2013-10-23
CN103339746B (zh) 2015-12-09
US20140000698A1 (en) 2014-01-02
CN103339746A (zh) 2013-10-02
DE102010061296A1 (de) 2012-06-21
WO2012080428A2 (de) 2012-06-21

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