Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/46—Filters
  • H03H9/64—Filters using surface acoustic waves
  • H03H9/6423—Means for obtaining a particular transfer characteristic
  • H03H9/6433—Coupled resonator filters
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02047—Treatment of substrates
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02086—Means for compensation or elimination of undesirable effects
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02543—Characteristics of substrate, e.g. cutting angles
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02637—Details concerning reflective or coupling arrays
  • H03H9/02653—Grooves or arrays buried in the substrate
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02818—Means for compensation or elimination of undesirable effects
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/46—Filters
  • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
  • H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/46—Filters
  • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
  • H03H9/56—Monolithic crystal filters
  • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/0023—Balance-unbalance or balance-balance networks
  • H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
  • H03H9/0033—Balance-unbalance or balance-balance networks using surface acoustic wave devices having one acoustic track only
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/0023—Balance-unbalance or balance-balance networks
  • H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/46—Filters
  • H03H9/64—Filters using surface acoustic waves
  • H03H9/6423—Means for obtaining a particular transfer characteristic
  • H03H9/6433—Coupled resonator filters
  • H03H9/6436—Coupled resonator filters having one acoustic track only
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/46—Filters
  • H03H9/64—Filters using surface acoustic waves
  • H03H9/6423—Means for obtaining a particular transfer characteristic
  • H03H9/6433—Coupled resonator filters
  • H03H9/644—Coupled resonator filters having two acoustic tracks
  • H03H9/6443—Coupled resonator filters having two acoustic tracks being acoustically coupled
  • H03H9/6453—Coupled resonator filters having two acoustic tracks being acoustically coupled by at least an interdigital transducer overlapping both tracks

Definitions

• the field of the invention is that of electromechanical devices exploiting the propagation of acoustic waves in piezoelectric or electrostrictive layers in order to perform electrical filter functions and to provide in addition electrical insulation between the input and the output of the component.
• Such devices have operating frequencies of the order of a few hundred MHz to a few GHz, and are used in radio transmission circuits (mobile phone, radio link, wireless data exchange, etc.), processing signal or in sensor systems.
• the field of the present invention relates to the electrical isolation between the input and the output of a component with a view to achieving mainly an impedance and / or mode conversion in acoustic filters, and therefore filters using acoustic resonators, mainly bulk wave resonators (Bulk Acoustic Wave or BAW). These filters are located at the radio frequency stage of radio transmission systems, in particular for mobile telephone systems.
• Figure 1 shows a block diagram of an RF stage.
• the signal coming from the antenna Is is directed towards two channels, filtered on a first so-called reception channel by a band-pass filter 1, then amplified by a low noise amplifier 2 (LNA, for Low Noise Amplifier), and blocked on a second channel in parallel called transmission by a filter 3 so as not to interfere with the signal transmitted towards the antenna.
• LNA low noise amplifier
• the signal from the antenna is by reference referenced to the ground, and therefore asymmetrical.
• the LNAs usually have differential accesses, where the signal is no longer referenced to ground, but rather propagates in two out of phase versions of 180. ° with respect to each other along the transmission lines.
• balun for Balanced / Unbalanced
• Baluns are very expensive systems in place and bringing losses. They are indeed achievable in using transmission line sections which should have centimeter dimensions at frequencies usually used for mobile telephony (of the order of a few GHz), or more commonly using magnetic windings close to transformers, thus requiring large areas (some mm 2 ) and having significant resistive losses.
• Coupled Resonator Filters acoustically coupled filters, allowing the conversion of GG mode Fattinger, J. Kaitila, R. Aigner and W. Nessier, Single-to-balanced Filters for Mobile Phones using Coupled Resonator BAW Technology, 2004 IEEE Ultrasonics Symposium, pp. 416-419, because by construction the inlet and the outlet of the filter are electrically insulated: R. Thalhammer, M. Handtmann, J. Kaitila, W. Nessier, L. Elbrecht, BAW resonators and a method for matching impedances , US Patent 2009/0096549 A1, Apr. 2009
• FIGS. 2a and 2b show a conversion filter for both mode and impedance in CRF technology, FIG. 2b highlighting the electrical connections of the resonators.
• the impedance conversion is obtained by mounting the two input resonators R e i and R e 2 and two output resonators, head to tail, so as to provide a factor 4 to the input impedance of the filter.
• the technological realization is however very heavy, because it requires the stacking of two resonators one on the other and therefore a technology requiring the deposit of fifteen layers and a dozen levels of masks: C. Billiards, N. Buffet, A. Reinhardt, G. Parat, S. Joblot and P. Bar, 200mm Manufacturing Solution for Coupled Resonator Filters, Proceedings of the 39th European Solid-State Device Research Conference (ESSDERC 2009), pp. 133-136.
• resonators Ri and R 2 of different thicknesses ML Franck, Ruby RC, Jamneala T., Bulk Acoustic Resonator Electrical Impedance Transformers, US Patent 2009/0273415 A1, Nov. 2009, as indicated in the These resonators are acoustically coupled by the layer (s) Ce located between them. They are stacked above a membrane made above a cavity Ca made on the surface of a substrate S. The impedance conversion is achieved by the difference in thickness, the lower and upper resonators presenting, for the same surface, different capacitance values, and therefore different impedance values.
• This solution poses the same manufacturing problems as the CRFs, namely that it requires the stacking of many layers and the use of many levels of masks.
• the thicknesses are fixed to a certain limit by the acoustics (the desired frequencies, the bandwidth, the coupling coefficients of the modes used, etc.), not allowing all the desired conversion ratios.
• e ⁇ ezo is the thickness of the piezoelectric layer
• e ⁇ ezo the dielectric constant of the piezoelectric material employed
• f 0 the center frequency of the filter
• the present invention provides a solution for impedance conversion and / or mode conversion using acoustic coupling of resonators.
• This conversion is obtained by providing electrical insulation between the input and the output of the filter, the insulation being itself obtained by the propagation of acoustic waves between the filter resonators.
• the guidance said waves thus allows a better channelization of the waves and thus to use resonators of different geometries.
• the conversion according to the invention thus makes it possible to avoid resorting to the technological complexity of a CRF filter, by allowing a greater latitude in the impedance ratios that can be expected while limiting the risks. internal electrical reflections in the case of high order filters.
• the subject of the present invention is an acoustic wave bandpass filter comprising at least a first acoustic wave input resonator having an output face and a second acoustic wave output resonator having an input face, said resonators being coupled together in a given direction, the input and output faces being substantially opposite, characterized in that it further comprises at least a first phononic crystal structure between said input and output resonators and / or a second phononic crystal structure at the periphery of said resonators so as to guide the acoustic waves generated by said input resonator towards said output resonator in said determined direction, the resonators making it possible to provide an impedance conversion and / or fashion.
• each resonator comprises at least one layer of piezoelectric material or electrostrictive material and at least one electrode.
• the input and output faces respectively of said second and first resonators are perpendicular to the determined direction, this variant being particularly advantageous for optimizing the coupling between the resonators.
• said output face of said input resonator is of different size from that of said input face of said output resonator.
• the first and / or second phononic crystal structures make it possible to converge or diverge (and thus guide) the acoustic waves from one of the faces towards the other according to their respective dimensions.
• the filter comprises a first set of input resonators and a second set of resonators of output, a first phononic crystal structure being disposed between each set.
• the filter comprises more than two coupled resonators, a first phononic crystal structure being disposed between each pair of resonators.
• the first phononic crystal structure is an acoustic lens structure, said first structure then providing a guiding function and a coupling function.
• the second phononic crystal structure provides a mirror function for said acoustic waves.
• the first phononic crystal structure is an acoustic wave coupling structure, the transmission coefficient of the acoustic waves of the second phonon crystal structure being much smaller than that of the first crystal structure phonon.
• the filter comprises at least one input resonator connected to a first potential and to ground, a first output resonator connected to a second potential and to ground and a second output resonator connected to the inverse of the second potential and ground, so as to provide impedance conversion and acoustic modes between the input resonator and the output resonators.
• the phononic crystal structure is located in the layer of piezoelectric or electrostrictive material.
• the phononic crystal structure comprises patterns on the surface of the layer of piezoelectric or electrostrictive material.
• the patterns of the phononic structure are made with at least one of the following materials: SiO 2 , SiN, Mo, W. AIN.
• the phononic crystal structure is one-dimensional or two-dimensional or three-dimensional.
• the piezoelectric material is a material among AIN, LiNbO 3 , ZnO, PZT, quartz, etc.
• the electrostrictive material is a material selected from BaSrTiO 3 , SrTiO 3 , BaTiO 3 .
• the phononic crystal structure comprises atomic inclusions and / or diffused species.
• the inclusions are obtained by implantation of hydrogen atoms.
• the phononic crystal structure comprises holes.
• the filter comprising several first phononic crystal structures, some of the first phononic crystal structures of the filter have acoustic wave attenuation coefficients different from the other first structures.
• the resonators are volume wave resonators.
• the resonators are Lamb wave resonators and comprise an upper electrode and a lower electrode.
• the resonators are surface wave resonators and comprise electrodes positioned on the surface of the piezoelectric material.
• FIG. 1 illustrates a block diagram of a radio frequency stage of a transmission or reception system
• FIGS. 2a and 2b illustrate the diagram of an impedance conversion filter and modes according to the prior art as well as the connection networks involved;
• FIG. 3 illustrates an impedance-conversion FBAR filter according to the known art using stacked resonators
• FIG. 4 illustrates an impedance conversion CRF type filter according to the prior art using four resonators
• FIG. 5 illustrates a view from above of an impedance conversion filter according to the invention comprising two phononic crystal, one of which provides a guiding function and the other a coupling function;
• FIG. 6 illustrates a top view of an impedance conversion filter according to the invention comprising a phononic crystal structure providing an acoustic lens function for coupling acoustic waves from the input resonator to the output resonator. ;
• FIG. 7 illustrates a top view of an impedance conversion filter according to the invention comprising several input and output resonators and several phononic crystal structures;
• FIG. 8 illustrates a top view of an impedance conversion filter and mode according to the invention comprising an input resonator and two output resonators to which the acoustic waves are guided;
• FIG. 9 illustrates a variant of the invention using surface wave resonators (an unattractive variant).
• FIG. 10 illustrates the admittance of BAW resonators used in a filter of the invention
• FIGS. 11a, 11b and 11c illustrate examples of configurations of resonators and phononic crystal structures that can be used in an exemplary filter according to the invention
• Figures 12a to 12e illustrate the various steps of making a first example according to the invention in sectional view and from above;
• Figures 13a to 13f illustrate the various steps of making a second example according to the invention in sectional view and from above;
• Figures 14a to 14f illustrate the various steps of making a third example according to the invention in sectional view and from above.
• acoustic resonators input and output type waves Lamb or SAW type (Surface Acoustic Wave), or BAW type (Bulk Acoustic Wave) such as SMR (Solidly Mounted Resonator) or FBAR (Film Bulk Acoustic Resonator) or HBAR (High-overtone Bulk Acoustic Resonator), side by side on the same substrate.
• acoustic resonator means a resonant acoustic cavity that includes or not one or more electrodes.
• a resonant cavity is not associated with an electrode, one or more inclusions are removed from the phononic crystal at specific locations to generate the desired acoustic waves.
• acoustically couple two resonators of different sizes To achieve a filter function and ensure impedance conversion and / or acoustic mode, it is advantageous to acoustically couple two resonators of different sizes.
• the acoustic coupling thus produced does not involve any effect of internal electrical reflections and the performance of the filter obtained is thereby improved.
• the impedance conversion makes it possible, for example, to provide a component having a characteristic input impedance different from that of the output impedance.
• a typical example is a filter with an input adapted to 50 Ohms and an output adapted to 200 Ohms (these adaptations being regulated by the dimensions of the input and output resonators: the surface for BAW resonators or the length and the number of interdigitated combs for Lamb wave or SAW resonators).
• the mode conversion may consist in presenting an input resonator, one of the electrodes is referenced to ground, and the other to the input signal.
• two resonators are thus available, either acoustically phase-shifted by 180 °, or connected head-to-tail, so as to generate two signals of opposite signs in the downstream circuit.
• a phononic crystal is placed which couples the resonators with each other and guides the waves with another phononic crystal designed to almost completely reflect the waves and thus confine the latter in or between the resonators, as illustrated in Figure 5.
• a first phonon crystal structure CPi is integrated between the two said resonators RI E and R-is, at the level of the piezoelectric material layer Pi ezo -
• a second phononic crystal structure CP 2 is provided on the periphery of the input and output resonators. output, so as to be able to confine the acoustic waves, this second structure providing a mirror effect vis-à-vis the acoustic waves.
• the crystal CP1 must have a transmission coefficient determined by the desired bandwidth and the phononic crystal CP2 must have a maximum reflection coefficient.
• the first phononic crystal structure to confer on it a lens function with respect to acoustic waves
• a lens structure is illustrated in FIG. configuration of such a structure CP-I L made at the Piezo piezoelectric material layer, no longer requiring the use of a guiding structure on either side of the two input and output resonators, such configurations of phonon crystal with lens effect are notably described in the following articles: AC Hladky-Hennion, J. Vasseur, B. Dubus, B. Djafari-Rouhani, D. Ekeom and B.
• the filter may advantageously comprise coupled resonators.
• the addition of additional resonators makes it possible to improve the selectivity of the filter.
• FIG. 7 illustrates in this respect a configuration comprising two first resonators RI E and R 2 E, and two second resonators R-is and R 2 s, each resonator being separated from an adjacent resonator by a phononic crystal structure: a first conversion structure CPi between the two resonators RI E and R-is, a second guiding phonon crystal structure CP 2 and third phonon crystal structures CP 3 allowing to improve the selectivity of the filter.
• the present invention allows to consider impedance conversion and mode at the same time. Indeed, it is possible to guide the waves to two resonators rather than one. Depending on the technology used, it is also possible to electrically connect the two output resonators, live or inverted as illustrated more precisely in Figure 8 which shows the potentials to which the input and output resonators are connected.
• An input resonator RI E is provided connected on the one hand to a first potential V1 and on the other hand to ground.
• a first output resonator R- is and a second output resonator R 2 s, the first output resonator being connected to the ground and to a second potential V 2, the second output resonator being differentially connected to ground and to a potential -V2.
• the geometries of the resonators are determined in order to better direct the side waves towards the output resonators.
• volume wave resonators Lamb wave resonators or surface wave resonators.
• exemplary embodiments are given below.
• FIG. 9 illustrates a configuration of surface wave resonators, showing a first series of interdigitated electrodes E iE to realize the surface wave input resonator, as well as two series of interdigital electrodes E iS i and E IS 2 defining two output surface wave resonators.
• the input resonator is separated from the resonators of the outputs by a first phonon crystal structure CPi.
• the present invention thus makes it possible to carry out the impedance conversion without the mode conversion. It is also less expensive in place (and probably in losses) than the balun technique (electrical coupling). Compared with CRFs, manufacturing technology is greatly simplified. Indeed one can achieve such devices with only four levels of masks.
• the filter comprises BAW resonators composed of a layer of 2 ⁇ of aluminum nitride (AlN) between two molybdenum (Mo) electrodes of a thickness each of 200 nm.
• AlN aluminum nitride
• Mo molybdenum
• Figure 10 illustrates the admittance of such resonators computed from a 1D model based on Mason equations, showing a resonance around 1 .6 GHz.
• the resonator surfaces can be calculated based on the following equation:
• f the resonance frequency (in the present case: 1 .6 GHz)
• FIG. 11a illustrates an exemplary configuration making it possible to obtain these physical parameters and this with the following dimensions:
• a structure may be made comprising cylindrical holes in an AlN membrane.
• the phononic crystal has a stopping band between 1 .57 and 1 .64 GHz.
• this filter may comprise a second phononic crystal structure CP 2 as illustrated in FIG. 11c, in order to obtain a better reflection around the input and output resonators to avoid losses.
• This second structure can be achieved in particular by operating cylindrical holes in the AIN, according to a hexagonal organization in honeycomb. With a mesh parameter of 1, 43 ⁇ and a radius of 0.69 ⁇ and keeping a thickness of 2 ⁇ , we obtain a stopping band between 1.34 and 1. 83 GHz.
• the first example is a filter consisting of Bragg mirror solid-mount resonators (SMRs) coupled by an acoustic lens consisting of a two-dimensional phononic crystal consisting of silica pads disposed in the space between the resonators above the piezoelectric layer.
• SMRs Bragg mirror solid-mount resonators
• acoustic lens consisting of a two-dimensional phononic crystal consisting of silica pads disposed in the space between the resonators above the piezoelectric layer.
• the silica pads could also be placed below and advantageously above and below the piezoelectric layer.
• silicon nitride SiN over a thickness of the order of 0.8 ⁇
• silicon oxycarbide or porous silicon SiOC over a thickness of approximately 1 ⁇
• SiN on a thickness of approximately 0.5 ⁇
• SiO 2 over a thickness of approximately 0.6 ⁇ in order to define a Bragg MR mirror structure.
• FIG. 12b illustrates the formation of the two lower electrodes En and E i2 by the deposition of a layer of molybdenum Mo over a thickness of 0.3 ⁇ m and then by lithography, etching and resin removal called "stripping".
• FIG. 12c illustrates the formation of the phononic crystal on the surface of the piezoelectric material Pi eZ0 , thanks to the following successive operations:
• FIG. 12d illustrates the realization of the upper electrodes E s and
• the phononic crystal could also consist of molybdenum pads to avoid some technological steps, but it would be necessary to pay attention to the fact that there is no electrical coupling between the metallic pads and the resonators.
• FIG. 12e illustrates a view from above of this example of a filter, the electrodes E i and E s defining an input resonator RE and the electrodes E i2 and E s2 defining an output resonator Rs.
• a variant of the first example consists in performing the impedance conversion by playing together on the surface and the thickness of the resonators so as to limit the bulk. For example, by decreasing the thickness of the piezoelectric layer, the area required to achieve a given impedance would be lower, which would induce a minimization of the area occupied by the component. This reduction can be done by inserting lithography steps, etching the AIN and "stripping" between the AIN deposit and the etching of the accesses to the lower electrode.
• the filter allows the impedance and mode conversion, with an output connected to anticro.
• the resonators are coupled by a two-dimensional phononic crystal consisting of cylindrical air inclusions (holes) in an aluminum nitride membrane (AIN) and realized following the process developed by G. Piazza's team: NK Kuo, CJ Zuo, G. Piazza, Demonstration of Inverse Acoustic Band Gap Structures in AIN and Integration with Piezoelectric Contour Mode Wideband Transducers, 2009 Solid-State Sensors, Actuators and Microsystems Symposium, pp.1-0-1 3, 2009, N. Sinha, R. Mahameed, C. Zuo, MB Pisani, CR Perez and G.
• a "Low Strees Nitride” (LSN) deposit with a thickness of about 300 nm. Is carried to the surface, a metal deposition plate to 200 nm thick, and by lithography and lift-off method, comes to define the geometry of lower electrodes of the resonators E i and E i2.
• the layer of piezoelectric material Pi ezo made of aluminum nitride is then deposited to a thickness of approximately 2 ⁇ .
• the phononic crystal structures are then made by dry etching of the AIN as shown in FIG. 13c.
• the upper electrodes E S i and E S 2 are then produced as illustrated in FIG. 13d by deposition of a platinum layer approximately 200 nm thick, lithography process and lift-off process.
• the release of the membrane is carried out to define resonators of the FBAR type, by Xenon Difluoride (XeF 2 ) etching, as illustrated in FIG. 13e.
• XeF 2 Xenon Difluoride
• FIG. 13f illustrates a view from above of the filter thus produced and of the resonator structures defined by the geometry of the electrodes: an input resonator REI and two output resonators Rsi and Rs2-
• the third example is an impedance conversion filter consisting of FBAR resonators made on a thin layer of zinc oxide (ZnO). Wave propagation is performed in a silicon membrane. Phononic crystals consist of air holes in the silicon membrane. The method is based on the method of producing phonon crystals developed by Mohammadi: S. Mohammadi, AA Eftekhar, A. Adibi, US Patent 2009/0295505 A1, Dec. 2009.
• a Silicon On Insulator (SOI) substrate composed of a silicon substrate S comprising a layer of SiO 2, S 0 buried and thus covered with a layer of silicon S ', with a thickness of If from 1 ⁇ , we proceed to the deposition of a layer of gold, 1000 nm thick and is defined in this layer the lower electrodes resonators by lithography process, as shown in Figure 14a.
• SOI Silicon On Insulator
• a layer of piezoelectric Pié Z0 material in micron-thick ZnO is produced, on which lithography, etching and "stripping" are carried out, the definition of patterns as illustrated in FIG. 14b. .
• a second metallization layer M s of aluminum 200 nm thick is deposited and the upper electrode patterns are defined by lithography, as illustrated in FIG. 14c.
• the phonon crystal structures CP 1 and CP 2 are produced in the silicon by lithography, etching and stripping, as illustrated in FIG. 14d.
• the release is carried out on the rear face of the membrane in order to produce a filter of the FBAR type, by an etching process that may advantageously be a DRIE "Deep Reactive Lonic Etching" method, as illustrated in FIG. 14e.
• FIG. 14f illustrates a view from above of such a filter FBAR, showing the different phononic crystal structures CP 1 and CP 2 , produced during the previous step.

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