WO2012036522A3 - Substrate structure for high-efficiency light emitting diodes and method of growing epitaxial base-layers thereon - Google Patents

Substrate structure for high-efficiency light emitting diodes and method of growing epitaxial base-layers thereon Download PDF

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Publication number
WO2012036522A3
WO2012036522A3 PCT/KR2011/006883 KR2011006883W WO2012036522A3 WO 2012036522 A3 WO2012036522 A3 WO 2012036522A3 KR 2011006883 W KR2011006883 W KR 2011006883W WO 2012036522 A3 WO2012036522 A3 WO 2012036522A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate structure
light emitting
efficiency light
layers
emitting diodes
Prior art date
Application number
PCT/KR2011/006883
Other languages
French (fr)
Other versions
WO2012036522A2 (en
Inventor
Jung-Gon Kim
Hwang-Sub Koo
Yong Goo Lee
Original Assignee
Memsplus Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memsplus Co., Ltd. filed Critical Memsplus Co., Ltd.
Publication of WO2012036522A2 publication Critical patent/WO2012036522A2/en
Publication of WO2012036522A3 publication Critical patent/WO2012036522A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A substrate structure for use in a high-efficiency light emitting diode (LED) and a method of growing an epitaxial base-layer on the substrate are provided. The substrate structure includes a plurality of growth cells provided on one surface of the substrate, each growth cell for formation of a nucleation island which acts as a seed for growing an epitaxial layer, wherein each of a plurality of the growth cell is formed of a bottom surface, on which the nucleation island is formed, and sidewalls of a predetermined height extending upwardly and outwardly from a circumference of the bottom surface, and endpoints of the sidewalls are connected by sharp-pointed ridges, thereby resulting in a polygon.
PCT/KR2011/006883 2010-09-17 2011-09-16 Substrate structure for high-efficiency light emitting diodes and method of growing epitaxial base-layers thereon WO2012036522A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100092050A KR101180414B1 (en) 2010-09-17 2010-09-17 Substrate structure for high-efficiency light emitting diodes and method of growing epitaxial base-layers thereon
KR10-2010-0092050 2010-09-17

Publications (2)

Publication Number Publication Date
WO2012036522A2 WO2012036522A2 (en) 2012-03-22
WO2012036522A3 true WO2012036522A3 (en) 2012-06-28

Family

ID=45832137

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006883 WO2012036522A2 (en) 2010-09-17 2011-09-16 Substrate structure for high-efficiency light emitting diodes and method of growing epitaxial base-layers thereon

Country Status (2)

Country Link
KR (1) KR101180414B1 (en)
WO (1) WO2012036522A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014101966A1 (en) * 2014-02-17 2015-08-20 Osram Opto Semiconductors Gmbh Method for producing an electronic semiconductor chip and electronic semiconductor chip
CN107919392A (en) * 2017-11-09 2018-04-17 中国电子科技集团公司第五十五研究所 Gallium nitride base nitride high electronic migration rate transmistor epitaxial structure and growing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080006207A (en) * 2006-07-11 2008-01-16 전북대학교산학협력단 Semiconductor, method of manufacturing the same and semiconductor light-emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080006207A (en) * 2006-07-11 2008-01-16 전북대학교산학협력단 Semiconductor, method of manufacturing the same and semiconductor light-emitting diode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M.H. LO ET AL.: "High efficiency light emitting diode with anisotropically etched GaN-sapphire interface", APPLIED PHYSICS LETTERS, vol. 95, 28 July 2009 (2009-07-28), pages 041109-1 - 041109-3 *
S.C. WEI ET AL.: "Nitride-Based MQW LEDs With Multiple GaN-SiN Nucleation Layers", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 52, no. 6, June 2005 (2005-06-01), pages 1104 - 1109 *

Also Published As

Publication number Publication date
WO2012036522A2 (en) 2012-03-22
KR20120029913A (en) 2012-03-27
KR101180414B1 (en) 2012-09-10

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