WO2012036472A3 - 결정성 막대를 이용한 수직형 발광 다이오드의 제조방법 - Google Patents

결정성 막대를 이용한 수직형 발광 다이오드의 제조방법 Download PDF

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Publication number
WO2012036472A3
WO2012036472A3 PCT/KR2011/006793 KR2011006793W WO2012036472A3 WO 2012036472 A3 WO2012036472 A3 WO 2012036472A3 KR 2011006793 W KR2011006793 W KR 2011006793W WO 2012036472 A3 WO2012036472 A3 WO 2012036472A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
crystalline rods
emitting diode
vertical light
crystalline
Prior art date
Application number
PCT/KR2011/006793
Other languages
English (en)
French (fr)
Other versions
WO2012036472A2 (ko
Inventor
정건영
김기석
Original Assignee
광주과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Publication of WO2012036472A2 publication Critical patent/WO2012036472A2/ko
Publication of WO2012036472A3 publication Critical patent/WO2012036472A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Abstract

수직형 발광 다이오드의 제조방법이 개시된다. 기판 상부에 수직배향된 다수의 결정성 막대들이 형성된다. 결정성 막대들은 규칙적인 배열을 가지며, 상부 표면이 (0001)평면을 형성한다. 극단적으로 일치된 배열을 가지는 결정성 막대 상부에는 발광 구조체가 형성된다. 결정성 막대는 발광 구조체와 화학적 조성을 달리하며, 다른 재질을 가진다. 따라서, 화학적 방법을 통해 결정성 막대의 선택적 제거가 가능해진다. 또한, 기존의 레이저를 이용한 기판의 제거도 이루어질 수 있으며, 결정성 막대의 기계적 성질을 이용한 기판의 제거도 이루어진다.
PCT/KR2011/006793 2010-09-16 2011-09-15 결정성 막대를 이용한 수직형 발광 다이오드의 제조방법 WO2012036472A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0091122 2010-09-16
KR1020100091122A KR101162090B1 (ko) 2010-09-16 2010-09-16 결정성 막대를 이용한 수직형 발광 다이오드의 제조방법

Publications (2)

Publication Number Publication Date
WO2012036472A2 WO2012036472A2 (ko) 2012-03-22
WO2012036472A3 true WO2012036472A3 (ko) 2012-06-14

Family

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Application Number Title Priority Date Filing Date
PCT/KR2011/006793 WO2012036472A2 (ko) 2010-09-16 2011-09-15 결정성 막대를 이용한 수직형 발광 다이오드의 제조방법

Country Status (2)

Country Link
KR (1) KR101162090B1 (ko)
WO (1) WO2012036472A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101684947B1 (ko) * 2015-05-08 2016-12-09 울산과학기술원 태양전지의 비반사막 제조방법
KR102068322B1 (ko) * 2018-04-03 2020-01-20 세종대학교산학협력단 그래핀 희생층을 이용한 에피택시 구조체 및 그 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060118845A (ko) * 2005-05-17 2006-11-24 엘지전자 주식회사 나노 로드를 갖는 발광 소자 및 그의 제조 방법
KR20080023821A (ko) * 2006-09-12 2008-03-17 엘지전자 주식회사 발광 다이오드 제조방법
US20090079035A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride material and production method
KR20100028412A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 나노 막대를 이용한 발광 다이오드 및 그 제조 방법
KR20100086592A (ko) * 2009-01-23 2010-08-02 광주과학기술원 산화아연 입자 제조방법 및 산화아연 로드 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060118845A (ko) * 2005-05-17 2006-11-24 엘지전자 주식회사 나노 로드를 갖는 발광 소자 및 그의 제조 방법
KR20080023821A (ko) * 2006-09-12 2008-03-17 엘지전자 주식회사 발광 다이오드 제조방법
US20090079035A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride material and production method
KR20100028412A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 나노 막대를 이용한 발광 다이오드 및 그 제조 방법
KR20100086592A (ko) * 2009-01-23 2010-08-02 광주과학기술원 산화아연 입자 제조방법 및 산화아연 로드 제조방법

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Publication number Publication date
WO2012036472A2 (ko) 2012-03-22
KR20120029185A (ko) 2012-03-26
KR101162090B1 (ko) 2012-07-03

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