WO2012033397A1 - Procédé de fabrication de nano-canaux en silicium - Google Patents

Procédé de fabrication de nano-canaux en silicium Download PDF

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Publication number
WO2012033397A1
WO2012033397A1 PCT/MY2011/000047 MY2011000047W WO2012033397A1 WO 2012033397 A1 WO2012033397 A1 WO 2012033397A1 MY 2011000047 W MY2011000047 W MY 2011000047W WO 2012033397 A1 WO2012033397 A1 WO 2012033397A1
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WO
WIPO (PCT)
Prior art keywords
channels
silicon
substrate
layer
nano
Prior art date
Application number
PCT/MY2011/000047
Other languages
English (en)
Inventor
Daniel Bien Chia Sheng
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2012033397A1 publication Critical patent/WO2012033397A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00055—Grooves
    • B81C1/00071—Channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/05—Microfluidics
    • B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0178—Oxidation

Definitions

  • the present invention relates to miniaturized fiuidic system.
  • the present invention relates to method of fabricating an array of silicon nano-channels of a miniaturized fiuidic system.
  • Miniaturized fiuidic systems have a wide range of applications in chemical synthesis and analysis.
  • chemical analysis for example, the main advantages over conventional systems include portability and low cost assays due to reduced chemical volumes used in the miniaturized systems.
  • Another example of application is in biomedical and environmental monitoring.
  • researchers are able to facilitate detection of individual DNA molecules and proteins by passing it through the flow channels of the miniaturized system.
  • Microfabrication and nano fabrication are already available foi ⁇ fabricating the miniaturized fiuidic systems in micron-size and nano-size structure respectively. Resolution of these fabrication technologies is largely dependent on the technologies available for respective sub-processes. For example, lithographic processes are dependent on the lithographic technique available. These techniques evolve very slowly and relatively costly. The fabrication processes are also affected by the etching process, which is generally the last stage of the fabrication process. The etching rates are dimension dependent, and hence, there are limited capability in etching nanostructure with high aspect ratio.
  • a method of fabricating a fluidic device having one or more nano-sized channels comprises etching a silicon-based substrate to form one or more channels of the desire shape and configuration; oxidizing the etched silicon-based substrate to grow a layer of silicon dioxide to miniaturize the one or more channels; and encapsulating the one or more miniaturized channels with another substrate.
  • the silicon-based substrate may be etched to form the one or more channel in micron-size, wherein the layer of silicon dioxide miniaturizes the one or more channels to become nano-size.
  • the etching may be a dry etching or a wet etching.
  • the one or more channels are formed on a silicon-based substrate based directly. It is also possible that the silicon-based substrate is a polysilicon layer provided on a silicon substrate base with a insulation layer sandwich therebetween, such that the one or more channels are formed on the polysilicon layer.
  • the insulation layer may further include, but not limited to, any of silicon dioxide and silicon nitride.
  • the method may further comprise surface processing the silicon dioxide layer to remove the silicon dioxide layer on the surface of the silicon-based substrate, leaving the layer of silicon dioxide layer remains in the one or more miniaturized channels. The surface processing may further include, but not limited to, any of polishing and plasma etching.
  • the silicon-based substrate and the encapsulating substrate are thin firm substrate. Yet, a thickness of silicon dioxide layer can be controlled through controlling the temperature.
  • a method of fabricating a fluidic device having one or more nano-sized channels comprises etching a substrate to form one or more channels of the desire shape and configuration in micron-size; oxidizing the etched substrate to grow an oxide layer to miniaturize the one or more channels, wherein a thickness of the oxide layer miniaturize the one or more channels to become nano-size; and encapsulating the one or more miniaturized channels with another substrate.
  • FIG. 1 illustrates a schematic cross sectional view of a nano-channels fiuidic device in accordance with one embodiment of the present invention
  • FIG. 2 is a flow chart illustrating the process flow of a fabrication process in accordance with one embodiment of the present invention.
  • FIG. 3 is a series of cross sectional diagrams showings the fabrication of a fluidic device in accordance with another embodiment of the present invention.
  • FIG. 4 is a series of cross sectional diagrams showings the fabrication of a fluidic device in accordance with yet another embodiment of the present invention. Detailed Description
  • the present invention in one aspect, provides a method of fabricating high aspect ratio nano-fluidic channels, which is independent of lithographic and etching limitations.
  • the proposed method includes silicon etching and selective thermal oxidation to miniaturise the dimensions of the channels from micro- to nano- dimensions. This allows fabrication of nano-dimensional structures with micro- fabrication technology.
  • FIG. 1 illustrates a schematic cross sectional view of a nano-channels fluidic device 100 in accordance with one embodiment of the present invention.
  • the nano-channels fluidic device 100 is suitable for chemical synthesis and analysis system for biomedical and environmental monitoring.
  • the nano-channels fluidic device 100 is fabricated through silicon etching and thermal oxidation process, which provides a simple and practical solution for low cost fabrication of fluidic nano-channel devices because it can be carried out under a microfabrication apparatus.
  • the nano-channels fluidic device 100 comprises a silicon substrate 102 defining a array of nano-channels, 110, a silicon dioxide coated on the silicon substrate 102, and an encapsulating substrate 106 disposed on the silicon substrate encapsulating the array of nano-channels 110 there under.
  • the nano-channels fluidic device 100 is fabricated by forming micro- channels on the substrate, and subsequently miniaturizing the channels to nano-size by selectively oxidizing the silicon surface to form a layer of silicon dioxide coated on the surfaces of the silicon substrate defining the micro-channels.
  • the layer of silicon dioxide grows or forms at exposed silicon areas where silicon will be consumed during the thermal oxidation process.
  • the other areas not intended to be oxidized may be covered by any suitable insulating material, such as silicon dioxide or silicon nitride. Due to the thickness of the silicon dioxide, the micro-channels become nano-sized.
  • the oxide growth rate is dependent on the growth temperature typically in the range between 850°C and 1200°C for silicon. Significantly slower growth rate can be achieved by reducing the process temperature, allowing better control of the oxide thickness.
  • FIG. 2 is a flow chart illustrating the process flow of a fabrication process 200 in accordance with one embodiment of the present invention.
  • FIG. 2 is also illustrates with reference to the nano-channels fiuidic device 100 of FIG. 1 and in conjunction with FIG. 3.
  • This method provides a simplified approach to fabricate fiuidic nano-channels with well-controlled dimensions. These channels may be of high aspect ratios.
  • the fabrication method in the present embodiment suggests a combination of silicon etching and thermal oxidation process, which provides a simple and practical solution for low-cost fabrication of fiuidic nano- channel device.
  • the present fabrication method does not require any complex lithographic tools or etching methods to produce the nano-channels as compare with the nanofabrication system.
  • High-end lithographic tools such as deep ultraviolet (DUV), extreme ultraviolet (EUV), electron beam lithography, x-ray lithography or nano-imprint lithography are not required for this process.
  • the fabrication process 200 comprises providing a silicon substrate or thin film silicon material at step 202; fabricating one or more channels in micron-dimension at step 204; thermally oxidizing silicon to miniaturize the one or more channels at step 206; optionally removing silicon dioxide layer from substrate surface 208; and encapsulating the miniaturized one or more channels to from the nano-channel fiuidic device at step 210.
  • the step 202 of FIG. 2 provides a silicon substrate 102 as a base for fabricating the nano-channel fiuidic device.
  • a thin film silicon material can also be selected as the base for the nano-channel fiuidic device deepening on the application.
  • one or more channels of a desired shape and configuration are formed on the silicon substrate 102.
  • Forming the one or more channels 110 on the silicon substrate 102 can be achieved with any known etching process, which is not described herewith. In this etching process, the channels can be formed at micron-dimensions, as the cost for forming micron-dimensions' structures is relatively low and less complex. As shown in the FIG. 1, three parallel channels 110 are formed with deep profile, i.e. high aspect ratio.
  • the silicon of the substrate is oxidized thermally to form an oxide layer 104 on the surface of the substrate 102 of which the channels 110 are formed.
  • the oxide layer 104 is also developed along the bottom surface and the sidewall of each channel, thereby miniaturizing the channels.
  • the thermal oxidizing process 206 is a silicon reduction process carried out selectively on silicon surface of the substrate 102.
  • the oxide layer 104 has a thickness causing the micron-sized channels 110 becoming nano- sized after the oxidizing process.
  • the thermal oxidizing process 206 includes heating the silicon substrate in a wet or dry (such as oxygen/nitrogen) mixtures at a temperature range of 600 to 1250°C. The high temperature aids diffusion of oxidant through the surface oxide layer to the silicon interface to form the oxides layer 104 quickly.
  • the wet/dry oxidizing process can be represented by the chemical reactions below:
  • an encapsulating substrate 106 is disposed on the silicon substrate 102 to encapsulate/sandwich the nano-channels underneath to form the nano-channel fluidic device 100.
  • the encapsulating substrate 106 can be bonded to the substrate 102 through any known method such as fusion, eutectic or adhesive bonding.
  • the encapsulating substrate 106 can also be a thin firm.
  • the substrate 102 can undergo a surface processing to remove the oxide layer 104 from the surface leaving the oxide layer 104 remains within the one or more channels 110. Thereafter, the encapsulating substrate 106 is disposed on the silicon substrate 102 to encapsulate the nano-channels underneath to form the nano-channel fluidic device 100.
  • the surface processing to remove the oxide layer 104 can be done by any chemical mechanical polishing (CMP) or plasma etching with a combination of gasses such as CF,
  • CMP chemical mechanical polishing
  • plasma etching with a combination of gasses such as CF,
  • the illustrated processes provide examples of fabrication process to produce fluidic nano-channels directly on a bulk silicon substrate or thin film silicon layer/film.
  • the method utilizes only a single lithographic mask to form the channels of desired shape and configuration and the nano-channels can be formed with just a single etching and oxide-growing step.
  • thermal oxidation technique in an alternative embodiment, it is possible to masked up the entire surface of the substrate with a film of silicon nitride or the like, leaving on the etched channels exposed after the one or more channels 110 are formed. As such, the thermal oxidation process can be carried out to grow an oxide layer only in the channels. Accordingly, the surface processing is not required.
  • FIG. 4 illustrates a fabrication process 400 for fabricating a nano- channel fluidic device 400 in accordance with an alternative embodiment.
  • the fabrication process 400 first depositing a thin film silicon dioxide or silicon nitride 404 onto a silicon substrate 402.
  • the thin film silicon dioxide or silicon nitride 404 is being used as insulation or passivation layer for the fluidic device.
  • a thin film of polycrystalline silicon layer 406 is deposited on top of the insulation layer 404.
  • the polycrystalline silicon layer 406 is being etched to form a plurality of channels 410.
  • the channels 410 can be fully or partially etched into the polycrystalline silicon thin film with channel width in micron-dimensions.
  • a layer of silicon dioxide 408 is grown thermally through silicon reduction process to miniaturise the channels' dimensions. With due control, a micron-sized channel can be miniaturized to nano-size.
  • an encapsulating substrate 409 can be disposed to seal the channels for form the nano-channel fluidic device.
  • the formed product is subjected to a surface processing to remove the oxide layer 408 from the surface of the polycrystalline silicon thin film layer 406 leaving the oxide layer 408 remains within the channels 410.
  • the encapsulating substrate 409 is disposed on the polycrystalline silicon thin film to encapsulate the nano-channels underneath to form the nano channel fluidic device.
  • nano-sized channels of the fluidic device it is possible to fabricate nano-sized channels of the fluidic device to have an aspect ration of 100: 1.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Weting (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un procédé servant à fabriquer un dispositif fluidique comportant un ou plusieurs canal (canaux) nanoscopique(s). Le procédé consiste à graver un substrat à base de silicium pour former un ou plusieurs canal (canaux) de la forme et de la configuration désirées ; à oxyder le substrat à base de silicium gravé pour faire croître une couche d'oxyde de silicium pour miniaturiser le(s) canal (canaux) ; à encapsuler le(s) canal (canaux) miniaturisé(s) avec un autre substrat. L'invention concerne aussi un dispositif fluidique fabriqué par le procédé susmentionné.
PCT/MY2011/000047 2010-09-09 2011-05-18 Procédé de fabrication de nano-canaux en silicium WO2012033397A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2010004254 2010-09-09
MYPI2010004254A MY177026A (en) 2010-09-09 2010-09-09 A method of fabricating silicon nano-channels

Publications (1)

Publication Number Publication Date
WO2012033397A1 true WO2012033397A1 (fr) 2012-03-15

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Country Status (2)

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MY (1) MY177026A (fr)
WO (1) WO2012033397A1 (fr)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HUG, T. S. ET AL.: "Fabrication and Electroosmotic Flow Measurements in Micro- and Nanofluidic Channels", MICROFLUIDICS AND NANOFLUIDICS 2, vol. 2, 2006, pages 117 - 124 *

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MY177026A (en) 2020-09-02

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