WO2012032790A1 - Composition having acid-labile dissolution inhibiting group - Google Patents

Composition having acid-labile dissolution inhibiting group Download PDF

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WO2012032790A1
WO2012032790A1 PCT/JP2011/005092 JP2011005092W WO2012032790A1 WO 2012032790 A1 WO2012032790 A1 WO 2012032790A1 JP 2011005092 W JP2011005092 W JP 2011005092W WO 2012032790 A1 WO2012032790 A1 WO 2012032790A1
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group
substituted
unsubstituted
carbon atoms
groups
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PCT/JP2011/005092
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French (fr)
Japanese (ja)
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英昭 塩谷
柏村 孝
宏寿 石井
貴紀 大和田
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出光興産株式会社
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Definitions

  • the present invention relates to a composition, a fine processing method using the composition, a semiconductor device obtained by the processing method, and a device including the semiconductor device.
  • Lithography using extreme ultraviolet light (Extreme Ultra Violet, EUV) or electron beam is useful as a high-productivity, high-resolution microfabrication method in the manufacture of semiconductors, etc., and develops high-sensitivity, high-resolution photoresists for use in it. It is requested to do. It is indispensable to improve the sensitivity of the photoresist used in these lithography from the viewpoint of the productivity and resolution of the desired fine pattern.
  • EUV extreme ultraviolet light
  • EUV extreme ultraviolet light
  • electron beam is useful as a high-productivity, high-resolution microfabrication method in the manufacture of semiconductors, etc., and develops high-sensitivity, high-resolution photoresists for use in it. It is requested to do. It is indispensable to improve the sensitivity of the photoresist used in these lithography from the viewpoint of the productivity and resolution of the desired fine pattern.
  • Examples of the photoresist used in ultrafine processing with extreme ultraviolet light include chemically amplified polyhydroxystyrene-based photoresists used in ultrafine processing with a known KrF laser. It is known that this resist can be finely processed up to about 50 nm. However, with this resist, the most important line edge roughness can be achieved even if high sensitivity and low resist outgas can be achieved to a certain extent by creating a pattern of 50 nm or less, which is the greatest merit of ultra-fine processing using extreme ultraviolet light. Since it cannot be reduced, it cannot be said that the original performance of extreme ultraviolet light has been sufficiently brought out. against this background, it has been demanded to develop a higher performance photoresist.
  • Patent Document 1 a resist compound with higher sensitivity has been demanded.
  • An object of the present invention is to provide a resist composition with higher performance.
  • a composition comprising a compound of formula (I) and a compound of formula (II).
  • R and R ′ are each hydrogen, a substituted or unsubstituted straight-chain aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms.
  • Groups substituted or unsubstituted cyclic aliphatic hydrocarbon groups having 3 to 20 carbon atoms, substituted or unsubstituted lactone rings having 4 to 20 carbon atoms, substituted or unsubstituted aromatic groups having 6 to 12 carbon atoms, and the like It is either a group in which two or more of the groups are combined, or a group represented by the following formulas (1) to (3).
  • R 1 and R 1 ′ are each hydrogen, hydroxyl group, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, substituted or unsubstituted A cyclic alkoxy group having 3 to 20 carbon atoms, a substituted or unsubstituted aryloxyl group having 6 to 10 carbon atoms, an alkoxyalkyloxy group, a siloxy group, and these groups and a divalent group (where a divalent group is A substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or unsubstituted silyleneoxy group, an ester bond group, a carbonate ester bond group, an ether bond group, or a combination of two or more of these groups A substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atom
  • R 2 and R 2 ′ are each a group represented by R 1 .
  • Ar is selected from a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, a group in which two or more substituted or unsubstituted arylene groups having 6 to 10 carbon atoms are combined, or an alkylene group and an ether bond
  • R 3 represents hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted, Unsubstituted cycloaliphatic group having 3 to 20 carbon atoms, substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted An alkoxy group having 3 to 12 carbon atoms, a substituted or unsubstituted cyclic alkoxy group having 3 to 20 carbon atoms, an alkoxyalkyl group, a carboxy group, a silyl group, and these groups and a divalent group (where, The divalent group is a substituted or unsubstituted alkylene group, a substituted or unsub
  • R 4 and R 5 are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted Alternatively, it is an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms, or a group obtained by combining two or more of these groups.
  • a 1 is a group combining two or more selected from an alkylene group, an ether bond and an alkylene group, or a group combining one or more alkylene groups and one or more ether bonds.
  • R is any one of the groups represented by formulas (1) to (3), or R 1 is hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic carbon atom having 1 to 20 carbon atoms, respectively.
  • Hydrogen group substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, substituted or unsubstituted 6 to 6 carbon atoms 10 aromatic groups, substituted or unsubstituted linear alkoxy groups having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy groups having 3 to 12 carbon atoms, substituted or unsubstituted 3 to 20 carbon atoms A cyclic alkoxy group, an alkoxyalkyl group, a carboxy group, a silyl group, and a divalent group thereof (wherein the divalent group is a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted group) Or leave A substituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or
  • R is any of the groups represented by the above formulas (1) to (3), and one of two R 1 existing on the same aromatic ring is a hydroxyl group, and the other is OR ′′.
  • R ′′ is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or a group having 3 to 20 carbon atoms.
  • R ′ is any one of the groups represented by the above formulas (1) to (3), and one of two R 1 ′ existing on the same aromatic ring is a hydroxyl group and the other is OR R '' is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or 3 to 3 carbon atoms. 4.
  • is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
  • is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group, a group formed by bonding a substituted or unsubstituted bicyclic aliphatic group to oxygen, or A linear group having 1 to 10 carbon atoms and a group selected from a quaternary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group
  • a group formed by combining an aliphatic hydrocarbon group is a group formed by bonding with oxygen.
  • is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group or a substituted or unsubstituted bicyclic aliphatic group bonded to oxygen, or A straight chain having 1 to 10 carbon atoms and a group selected from a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group
  • a group formed by combining a group of aliphatic hydrocarbon groups is a group formed by bonding with oxygen.
  • is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
  • R 3 is a group selected from the following formulas (6) to (42).
  • the compound of the formula (I) and the compound of the formula (II) each contain a plurality of R 3 s , all R 3 contained in the compound of the formula (I) do not contain a polar structure at the end, and the formula 8.
  • 9. 9 The composition according to 8, wherein at least two ends of R 3 contained in the compound of the formula (II) are a lactone ring having 3 to 20 carbon atoms or a carbocyclic ketone having 3 to 20 carbon atoms.
  • R 3 contained in the formula (I) is a group selected from the following formulas (8) to (11), (16), (17) and (20) to (25), The composition according to 9, wherein R 3 contained in the formula (II) is a group selected from the following formulas (18), (19), (26) to (29), (43) and (44): . 11.
  • a microfabrication method using the composition according to any one of 11.1 to 10. A semiconductor device manufactured by the microfabrication method described in 12.11. A device comprising the semiconductor device according to 13.12.
  • a higher-performance resist composition can be provided.
  • FIG. 3 is a graph showing the measurement result of 1 H-NMR of cyclic compound P-1 of Production Example 1.
  • FIG. 4 is a diagram showing the measurement result of 1 H-NMR of cyclic compound P-2 of Production Example 2.
  • FIG. 4 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-1 of Production Example 3.
  • FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-2 of Production Example 4.
  • FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-3 in Production Example 5.
  • FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-6 of Production Example 8.
  • FIG. 10 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-7 of Production Example 9.
  • FIG. 3 is a diagram showing the measurement result of 1 H-NMR of cyclic compound P-3 of Production Example 10.
  • FIG. 6 is a graph showing the results of 1 H-NMR measurement of cyclic compound A-8 in Production Example 11.
  • FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-9 in Production Example 12.
  • FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-10 of Production Example 13.
  • FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-11 of Production Example 14.
  • FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-12 of Production Example 15. It is a photograph which shows the line drawn using the photoresist solution of Example 2, Example 15, and Comparative Example 2.
  • composition of the present invention comprises a compound of formula (I) and a compound of formula (II).
  • R and R ′ are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms.
  • the aromatic group is a group containing a benzene ring.
  • Group combining two or more types means a group in which two or more types are single-bonded or a group in which two or more types are condensed to form a ring.
  • the following groups include an unsubstituted straight-chain aliphatic hydrocarbon group having 1 carbon atom, an unsubstituted aliphatic hydrocarbon group having 4 carbon atoms, and an unsubstituted cycloaliphatic group having 6 carbon atoms. It is a group in which a hydrocarbon group and an unsubstituted aromatic group having 10 carbon atoms are combined.
  • R and R ′ are each preferably a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms or a group represented by the following formulas (1) to (3), more preferably in the following formula (2). The group represented.
  • the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon.
  • halogen groups such as fluorine, chlorine and bromine
  • halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group
  • carbonyl-containing groups such as acetyl group and benzoyl group
  • methoxy group And groups containing an ether bond such as ethoxy group
  • silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group
  • nitrogen-containing groups such as diethylamino group.
  • R 1 and R 1 ′ are each hydrogen, hydroxyl group, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, substituted or unsubstituted A cyclic alkoxy group having 3 to 20 carbon atoms, a substituted or unsubstituted aryloxyl group, an alkoxyalkyloxy group, a siloxy group, a divalent group (substituted or unsubstituted alkyleneoxy group) Substituted or unsubstituted aryleneoxy group, substituted or unsubstituted silyleneoxy group, ester bond group (—CO 2 —), carbonate bond group (—CO 3 —), ether bond (—O—) group, or A group formed by combining two or more of these groups), a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms,
  • Substituted aliphatic hydrocarbon group having 3 to 12 carbon atoms substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, substituted Or an unsubstituted aromatic group having 6 to 10 carbon atoms, an alkoxyalkyl group, a carboxy group, a silyl group, and these groups and a divalent group (substituted or unsubstituted alkylene group, substituted or unsubstituted arylene group, substituted Or an unsubstituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), an acid dissociable, dissolution inhibiting group, or the following formula (1 ) To (3).
  • the (—O—) group or a divalent group formed by bonding two or more of these groups is preferably a substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or An unsubstituted silyleneoxy group, a group formed by bonding two or more of these groups, or an ester bond (—CO 2 —), a carbonate ester bond (—CO 3 —) or an ether bond (—O—) of these groups Is a group formed by bonding.
  • the divalent group is preferably a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, a group formed by bonding two or more of these groups, or these groups 1 This is a group combining at least one selected from an ester bond, a carbonate ester bond and an ether bond.
  • the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon.
  • halogen groups such as fluorine, chlorine and bromine
  • halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group
  • carbonyl-containing groups such as acetyl group and benzoyl group
  • methoxy group And groups containing an ether bond such as ethoxy group
  • silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group
  • nitrogen-containing groups such as diethylamino group.
  • R 1 and R 1 ′ are each preferably a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 4 carbon atoms, or a group represented by the following formulas (1) to (3). It is. Preferably, at least two of the eight R 1 included in the formula (I) are hydroxyl groups, and at least two of the eight R 1 ′ included in the formula (II) are hydroxyl groups. Preferably, at least four of the eight R 1 included in the formula (I) are hydroxyl groups, and at least four of the eight R 1 ′ included in the formula (II) are hydroxyl groups.
  • At least one of R 1 is a hydroxyl group, and among bond to have two R 1 'to each benzene ring, at least one of R 1 ' Is a hydroxyl group.
  • one R 1 and R 1 ′ of the benzene ring is a hydroxyl group
  • the other R 1 and R 1 ′ is a linear or branched alkoxy group having 1 to 4 carbon atoms. That is, of the two R 1 bonded to each benzene ring, at least one R 1 is a hydroxyl group and the other R 1 is a linear or branched alkoxy group having 1 to 4 carbon atoms, and each Of the two R 1 ′ bonded to the benzene ring, at least one R 1 ′ is a hydroxyl group and the other R 1 ′ is a linear or branched alkoxy group having 1 to 4 carbon atoms.
  • the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon.
  • halogen groups such as fluorine, chlorine and bromine
  • halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group
  • carbonyl-containing groups such as acetyl group and benzoyl group
  • methoxy group And groups containing an ether bond such as ethoxy group
  • silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group
  • nitrogen-containing groups such as diethylamino group.
  • R 2 and R 2 ′ are each a group represented by R 1 .
  • R 2 and R 2 ′ are preferably hydrogen.
  • R and R ', R 1 and R 1', and at least one of R 2 and R 2 ' are different from each other.
  • R and R ′ are different.
  • Ar is selected from a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, a group in which two or more substituted or unsubstituted arylene groups having 6 to 10 carbon atoms are combined, or an alkylene group and an ether bond.
  • the “group in which two or more substituents are combined” means a group in which two or more substituents are single-bonded.
  • Ar is preferably a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, and more preferably a phenylene group.
  • R 3 represents hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted, Unsubstituted cycloaliphatic group having 3 to 20 carbon atoms, substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted A branched C3-C12 alkoxy group, a substituted or unsubstituted C3-C20 cyclic alkoxy group, an alkoxyalkyl group, a carboxy group, a silyl group, a divalent group (substituted or unsubstituted).
  • substituted alkylene group a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, an ester bond group (-COO-), carbonate bond group (-CO 3 -), ether formation Group (-O-), or these groups more bonds to become group) bonded group, or an acid dissociable, dissolution inhibiting group.
  • the cyclic aliphatic group includes a cyclic ether and a lactone ring in addition to the cyclic aliphatic hydrocarbon group.
  • the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon.
  • halogen groups such as fluorine, chlorine and bromine
  • halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group
  • carbonyl-containing groups such as acetyl group and benzoyl group
  • methoxy group And groups containing an ether bond such as ethoxy group
  • silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group
  • nitrogen-containing groups such as diethylamino group.
  • R 3 is preferably a substituted or unsubstituted cyclic aliphatic group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, an unsubstituted alkylene group, an ester bond, and an ether bond.
  • R 4 and R 5 are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted Alternatively, they are an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms, or a group formed by combining two or more of these groups.
  • R 4 and R 5 are preferably hydrogen or an alkyl group.
  • the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon.
  • halogen groups such as fluorine, chlorine and bromine
  • halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group
  • carbonyl-containing groups such as acetyl group and benzoyl group
  • methoxy group And groups containing an ether bond such as ethoxy group
  • silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group
  • nitrogen-containing groups such as diethylamino group.
  • a 1 is a group in which two or more selected from an alkylene group, an ether bond and an alkylene group are combined, or a group in which one or more alkylene groups and one or more ether bonds are combined.
  • a 1 is preferably a single bond or an oxymethylene group (—O—CH 2 —), and more preferably a single bond.
  • X is 1 to 5, preferably 1.
  • y is 0 to 3, preferably 0 or 1.
  • z is 0 to 4, preferably 0 or 1.
  • a plurality of R 1 , R 2 , R 3 , R 4 , R 5 , R 1 ′ , R 2 ′ , R 3 ′ , Ar, and A 1 may be the same or different.
  • R is any one of the groups of the above formulas (1) to (3), or R 1 is any group represented by the above R 3 and a plurality of R 1 or more of 1 is an acid dissociable, dissolution inhibiting group.
  • R is any one of the groups represented by the above formulas (1) to (3), and two R 1 existing on the same aromatic ring, One is a hydroxyl group and the other is a group represented by OR ′′, and R ′′ has hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, and a branch having 3 to 12 carbon atoms.
  • R ′ is any one of the groups represented by the above formulas (1) to (3) and two Rs existing on the same aromatic ring. 1 ′ , one is a hydroxyl group and the other is a group represented by OR ′′, R ′′ is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, or 3 to 12 carbon atoms. A branched aliphatic hydrocarbon group, a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
  • At least two of the plurality of R 1 are hydroxyl groups, and at least one of the plurality of R and the plurality of R 1 is any one of the groups of the above formulas (1) to (3).
  • at least two of the plurality of R 1 ′ are hydroxyl groups, and at least two of the plurality of R ′ and the plurality of R 1 ′ are represented by the above formulas (1) to (3
  • the plurality of R 3 contained in the compound of the formula (I) all do not contain a polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) At least two of R 3 preferably contain a polar structure at the end.
  • the plurality of R 3 contained in the compound of the formula (I) all do not contain a polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) are All preferably contain polar structures at the ends.
  • R 3 is “a hydroxyl group, a substituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms containing a polar structure, a substituent containing a polar structure”
  • containing a polar structure means containing an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom).
  • a halogen atom a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. Examples thereof include a carbonyl group, an ether bond, an ester bond, an amino group, an amide group, and a halogen group.
  • R 3 constituting R ′ the atom located most outside and the atoms constituting the polar structure (oxygen atom, nitrogen atom, sulfur atom, halogen atom (fluorine atom, chlorine atom) , Bromine atom, iodine atom)) and the most distant atom is 6 cm or less.
  • the terminal of R 3 constitutes a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms (such as a carbocyclic ketone) substituted with a carbonyl group (the leftmost terminal in the above figure) or its ring.
  • This is a group (lactone ring or the like) in which a part of carbon atoms to be replaced with oxygen atoms (the rightmost terminal in the above figure).
  • R 3 is preferably any one of the following formulas (I) to (IV).
  • is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, or a substituted or unsubstituted aliphatic group having 3 to 10 carbon atoms. It is a hydrocarbon group, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
  • is preferably a substituted or unsubstituted straight-chain aliphatic hydrocarbon group having 1 to 10 carbon atoms, and more preferably methylene.
  • is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group, a group formed by bonding a substituted or unsubstituted bicyclic aliphatic group to oxygen, or these
  • a group formed by combining oxygen and a straight-chain aliphatic hydrocarbon group having 1 to 10 carbon atoms is a group formed by bonding with oxygen.
  • is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, or a substituted or unsubstituted monocyclic aliphatic group, preferably a tertiary carbon contained in these groups is bonded to an oxygen atom.
  • is a group containing a benzene ring, the benzylic carbon is preferably bonded to an oxygen atom.
  • is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group or a substituted or unsubstituted bicyclic aliphatic group bonded to oxygen, or A group formed by combining a group selected from these and a linear aliphatic hydrocarbon group having 1 to 10 carbon atoms is a group formed by bonding with oxygen.
  • is preferably a group in which a tertiary aliphatic structure, a monocyclic aliphatic structure or a polycyclic aliphatic structure is bonded to oxygen.
  • is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
  • the aliphatic hydrocarbon group ( ⁇ ) is preferably alkylene.
  • ⁇ and ⁇ are preferably linear or branched aliphatic hydrocarbon groups.
  • the ⁇ - ⁇ linear or branched aliphatic hydrocarbon group preferably has 1 to 4 carbon atoms, and most preferably a methylene group.
  • Examples of ⁇ , ⁇ tertiary aliphatic groups include t-butyl, t-amyl and the like.
  • the aromatic group is a group containing a benzene ring (the benzene ring may be condensed with cycloalkyl or cyclic ether), and examples thereof include phenyl, naphthyl, tetrahydronaphthyl, indanyl, chromanyl and the like.
  • Examples of monocyclic aliphatic groups include cyclopentyl and cyclohexyl.
  • Examples of the bicyclic aliphatic group include norbornyl, adamantyl, biadamantyl, diamantyl and the like.
  • the monocyclic or polycyclic aliphatic group includes cyclic ethers, lactones of oxyacids such as groups (28), (29), (43), and (44) described later.
  • the substituents for ⁇ and ⁇ are preferably alkyl, alkoxy, carboxy, and carbonyl.
  • the substituent is carbonyl, it is included in the ring, for example, as described later (18), (19), (26), (27) and the like.
  • the number of carbon atoms of the substituent alkyl, alkylene or alkoxy is preferably 1 to 4.
  • R 3 include groups represented by the following formulas (6) to (42). (Wherein, r represents any one of the substituents represented by the above formulas (6) to (34) and (38) to (42)).
  • Preferred structures for R 3 are (8), (10), (19), (20), (28), and (43).
  • the cyclic compound used in the present invention can be obtained by, for example, a calix by a condensation cyclization reaction between an aldehyde compound having a corresponding structure and an aromatic compound having both a solubility adjusting group and a hydroxyl group in the presence of an acid catalyst by a known method.
  • a resorcinalene derivative (precursor) is synthesized, and a compound corresponding to a group such as R 3 is introduced into the precursor by an esterification reaction, an etherification reaction, an acetalization reaction, or the like. Specific examples will be described in the embodiments described later.
  • the composition of the present invention is preferably a photoresist composition comprising a compound of formula (I) and a compound of formula (II) as a photoresist substrate, and the two photoresist substrates are mixed as described above.
  • a photoresist composition comprising a compound of formula (I) and a compound of formula (II) as a photoresist substrate, and the two photoresist substrates are mixed as described above.
  • R and R ′ are each a group represented by the formula (2), R 2 and R 2 ′ are hydrogen, and the same aromatic ring Of the two R 1 and R 1 ′ present above, one is a hydroxyl group and the other is the same linear or branched alkoxy group having 1 to 4 carbon atoms.
  • all of the plurality of R 3 contained in the compound of the formula (I) do not contain a polar structure at the end, and at least two of the plurality of R 3 contained in the compound of the formula (II) are terminal.
  • the part preferably contains a polar structure. More preferably, the plurality of R 3 contained in the compound of the formula (I) do not contain any polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) all contain the polar structure at the end. It is preferable to contain.
  • “having a polar structure at the end” is as described above.
  • the composition of the present invention preferably satisfies the following formula (A), more preferably the following formula (B), still more preferably the following formula (C), and most preferably the following formula (D).
  • 0.01 ⁇ t ⁇ 100 / (s + t) ⁇ 90 (A) 0.05 ⁇ t ⁇ 100 / (s + t) ⁇ 70 (B) 0.1 ⁇ t ⁇ 100 / (s + t) ⁇ 50 (C) 1 ⁇ t ⁇ 100 / (s + t) ⁇ 40
  • s is the total weight of the compound of formula (I) in the composition
  • t is the total weight of the compound of formula (II) in the composition.
  • the total content of the compound of the formula (I) and the compound of the formula (II) in the composition of the present invention is preferably 50 to 99.9% by weight in the total composition excluding the solvent, more preferably 75 to 95% by weight.
  • Examples of the solvent used in the composition of the present invention include ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; ethylene such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether.
  • Glycol monoalkyl ethers propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monoethyl ether acetate; propylene glycol monoalkyls such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether Ethers; lactic acid such as methyl lactate and ethyl lactate (EL) Stealth; Aliphatic carboxylic acid esters such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl propionate (PE); methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate Other esters such as ethyl 3-ethoxypropionate; aromatic hydrocarbons such as toluene and xylene; ketones such as 2-heptanone
  • the components other than the solvent in the composition that is, the amount of the photoresist solid content, is preferably set to an amount suitable for forming a desired thickness of the photoresist layer. Specifically, it is generally 0.1 to 50% by weight based on the total weight of the composition, but it can be defined according to the type of base material and solvent used or the desired film thickness of the photoresist layer.
  • the solvent is preferably blended in an amount of 50 to 99.9% by weight in the total composition.
  • composition of the present invention does not require an additive, particularly when the substrate molecule contains a chromophore active against EUV and / or electron beam and exhibits its ability as a photoresist alone.
  • a photoacid generator PAG
  • PAG photoacid generator
  • the photoacid generator is not particularly limited, and those proposed as acid generators for chemically amplified resists can be used.
  • acid generators include onium salt acid generators such as iodonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, and diazomethanes such as poly (bissulfonyl) diazomethanes.
  • onium salt acid generators such as iodonium salts and sulfonium salts
  • oxime sulfonate acid generators such as bisalkyl or bisarylsulfonyldiazomethanes
  • diazomethanes such as poly (bissulfonyl) diazomethanes.
  • acid generators nitrobenzyl sulfonate acid generators, imino sulfonate acid generators, disulfone acid generators, and the
  • a compound that generates an organic sulfonic acid by the action of actinic rays or radiation is particularly preferable.
  • the blending amount of the PAG is 0 to 40% by weight, preferably 5 to 30% by weight, more preferably 5 to 25% by weight in the total composition excluding the solvent.
  • an acid diffusion control agent having an action of controlling an undesired chemical reaction in an unexposed region by controlling diffusion of an acid generated from an acid generator by irradiation in a resist film.
  • an acid diffusion controller By using such an acid diffusion controller, the storage stability of the composition is improved. Further, the resolution is improved, and a change in the line width of the resist pattern due to fluctuations in the holding time before electron beam irradiation and the holding time after electron beam irradiation can be suppressed, and the process stability is extremely excellent.
  • acid diffusion control agents include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; diethylamine, di-n-propylamine, di- -Dialkylamines such as n-heptylamine, di-n-octylamine, dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine Trialkylamines such as tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decanylamine, tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, Isopropano Alkyl alcohol amine
  • the blending amount of the quencher is 0 to 40% by weight, preferably 0.01 to 15% by weight, based on the total composition excluding the solvent.
  • further miscible additives for example, additional resins for improving the performance of resist films, surfactants for improving coating properties, dissolution control agents, sensitizers, plasticizers. Stabilizers, colorants, antihalation agents, dyes, pigments, and the like can be appropriately added and contained.
  • the photoresist composition of the present invention is applied onto a substrate such as a silicon wafer, a gallium arsenide wafer, or a wafer coated with aluminum, by spin coating, cast coating, roll coating, or other coating means. Then, a resist film is formed by coating.
  • a surface treatment agent may be applied on the substrate in advance.
  • the surface treatment agent include a silane coupling agent such as hexamethylene disilazane (hydrolyzable polymerizable silane coupling agent having a polymerizable group), an anchor coating agent or a base agent (polyvinyl acetal, acrylic resin, vinyl acetate). Based resins, epoxy resins, urethane resins, etc.), and coating agents obtained by mixing these base agents and inorganic fine particles.
  • a protective film may be formed on the resist film in order to prevent invasion of amines floating in the atmosphere.
  • the acid generated in the resist film due to radiation reacts with a compound that reacts with an acid such as amine floating as an impurity in the atmosphere and deactivates, and the resist image deteriorates and sensitivity. Can be prevented from decreasing.
  • a water-soluble and acidic polymer is preferable. Examples thereof include polyacrylic acid and polyvinyl sulfonic acid.
  • the heating temperature varies depending on the composition of the composition, but is preferably 20 to 250 ° C, more preferably 40 to 150 ° C.
  • the resist film is exposed to a desired pattern by radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray.
  • the exposure conditions and the like are appropriately selected according to the composition of the photoresist composition.
  • the post-exposure heating temperature (PEB) varies depending on the composition of the composition, but is preferably 20 to 250 ° C., more preferably 40 to 150 ° C.
  • a predetermined resist pattern can be formed by developing the exposed resist film with an alkaline developer.
  • the alkaline developer include alkaline such as mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), and choline.
  • An alkaline aqueous solution of preferably 1 to 10% by weight, more preferably 1 to 5% by weight, in which one or more compounds are dissolved, is used.
  • An appropriate amount of an alcohol such as methanol, ethanol, isopropyl alcohol, or the above-mentioned surfactant can be added to the alkaline developer. Of these, it is particularly preferable to add 10 to 30% by weight of isopropyl alcohol.
  • the resist film is exposed to a desired pattern with radiation such as KrF excimer laser, extreme ultraviolet light, electron beam, or X-ray, thereby generating an acid.
  • radiation such as KrF excimer laser, extreme ultraviolet light, electron beam, or X-ray
  • the dissociable dissolution inhibiting group is eliminated or the structure is changed, the dissociable dissolution inhibiting group is dissolved in the alkaline developer.
  • it is preferable that the unexposed portion of the pattern is not dissolved in the alkaline developer.
  • the acid dissociable, dissolution inhibiting group is an alkali developer that undergoes elimination or changes in structure by reacting with an acid (proton) generated from the photoacid generator within the resist film by radiation such as KrF excimer laser. It is a substituent having a function of becoming a substituent that contributes to dissolution in the aqueous solution.
  • post-baking treatment may be performed after the alkali development, or an organic or inorganic antireflection film may be provided between the resist film and the substrate.
  • the pattern wiring board is obtained by etching. Etching can be performed by a known method such as dry etching using plasma gas, wet etching using an alkali solution, a cupric chloride solution, a ferric chloride solution, or the like. After the resist pattern is formed, a plating process such as copper plating, solder plating, nickel plating, or gold plating can be performed.
  • the residual resist pattern after etching can be stripped with an aqueous solution stronger than an organic solvent or an alkali developer.
  • organic solvent include PGMEA, PGME, EL, acetone, tetrahydrofuran, and the like.
  • strong alkaline aqueous solution include 1 to 20% by weight sodium hydroxide aqueous solution and 1 to 20% by weight potassium hydroxide aqueous solution. Is mentioned.
  • peeling method include a dipping method and a spray method.
  • the wiring board on which the resist pattern is formed may be a multilayer wiring board or may have a small diameter through hole.
  • a wiring board by a method in which a resist pattern is formed using the composition of the present invention, a metal is vacuum-deposited, and then the resist pattern is eluted with a solution, that is, a lift-off method.
  • a semiconductor device can be produced by a microfabrication method using the composition of the present invention.
  • This semiconductor device can be provided in various devices such as an electric product (electronic device) such as a television receiver, a mobile phone, and a computer, a display, and a car controlled by a computer.
  • the structure of the cyclic compound (1) was confirmed by liquid chromatography measurement and 1 H-NMR measurement.
  • the measurement result of 1 H-NMR is shown in FIG.
  • the target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
  • the structure of the cyclic compound (A-2) was confirmed by liquid chromatography measurement and 1 H-NMR measurement.
  • the measurement result of 1 H-NMR is shown in FIG.
  • the target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
  • reaction solution was extracted with ethyl acetate and washed with pure water and saturated brine.
  • the obtained solution was concentrated and reprecipitated with a mixed solvent of ethyl acetate and hexane to obtain a cyclic compound (A-3) (10.5 g, yield 62%).
  • the structure of the cyclic compound (A-3) was confirmed by liquid chromatography measurement and 1 H-NMR measurement.
  • the measurement result of 1 H-NMR is shown in FIG.
  • the target product had four protecting groups, and the purity of the target product was 94% in liquid chromatography (area% when measuring wavelength 280 nm).
  • the target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
  • Production Example 7 (Cyclic Compound A-5) A cyclic compound (A-5) was obtained in the same manner as in Production Example 3 except that 5-acetoxyindenyl bromoacetate was used instead of ethyl adamantyl bromoacetate (yield: 85%).
  • the target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% at wavelength 280 nm measurement).
  • 1 H-NMR internal standard tetramethylsilane: solvent (heavy DMSO: ppm): 1.976-2.106 (4H, m), 2.268 (12H, s), 2.434-2.520 (4H M), 2.800-2.838 (4H, m), 2.934-2.992 (4H, m), 3.479-3.620 (12H, m), 4.853 (8H, s) ), 5.231 (2H, t), 5.658 (4H, s), 6.175 (4H, s), 6.237 (2H, t), 6.341 (2H, s), 6.528 (2H, s), 6.680-6.744 (8H, m), 6.944 (4H, d), 7.041 (4H, s), 7.369 (4H, d), 7.497- 7.593 (8H, m), 9.019 (2H,
  • the reaction solution was allowed to cool, and ethyl acetate was added to the filtrate obtained by filtration to obtain a homogeneous solution, which was then washed with a 0.5 M acetic acid aqueous solution in a separatory funnel. Further, the ethyl acetate solution was washed with ion exchange water until the aqueous layer became neutral, and the ethyl acetate solution was treated with anhydrous magnesium sulfate to remove moisture. After filtration, the filtrate was concentrated with a rotary evaporator under reduced pressure, and the concentrate was poured into hexane to obtain a solid. The solid was filtered off and dried under vacuum at 50 ° C. for 8 hours to obtain a cyclic compound represented by the cyclic compound (A-6).
  • Production Example 9 (Cyclic Compound A-7) Synthesis was performed in the same manner as in Production Example 5 except that 5-oxoadamantyloxymethylene chloride was used instead of adamantyloxymethylene chloride (yield 85.2%).
  • the target product had four protecting groups, the structure was confirmed by 1 H-NMR (FIG. 7), and the purity of the target product was 94% by liquid chromatography (at the wavelength of 280 nm measurement). area%).
  • Production Example 11 (Cyclic Compound A-8) The same operation as in Production Example 3 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-8). (Yield 18 g, yield 99%).
  • the structure of the cyclic compound (A-8) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
  • Production Example 12 (Cyclic Compound A-9) The same operation as in Production Example 4 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-9). (Yield 16 g, yield 90.7%). The structure of the cyclic compound (A-9) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
  • Production Example 13 (Cyclic Compound A-10) The same operation as in Production Example 5 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-10). (Yield 16 g, yield 99%).
  • the structure of the cyclic compound (A-10) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
  • Production Example 14 (Cyclic Compound A-11) A cyclic compound (A-11) was obtained in the same manner as in Production Example 5 except that norbornyllactone oxymethylene chloride (10.9 g, 54 mmol) was used instead of adamantyloxymethylene chloride (yield). 15.8 g, yield 88.1%). The target product had four protecting groups, and the structure was confirmed by 1 H-NMR. The measurement result of 1 H-NMR is shown in FIG.
  • Production Example 15 (Cyclic Compound A-12) The same procedure as in Production Example 5 was performed, except that 2-chloromethoxy-4-oxa-5-homoadamantan-5-one (12.4 g, 54 mmol) was used instead of adamantyloxymethylene chloride. Compound (A-12) was obtained (yield: 85.2%). The target product had four protecting groups, and the structure was confirmed by 1 H-NMR. The measurement result of 1 H-NMR is shown in FIG.
  • Example 1 The above compounds were mixed and dissolved in the compositions and blending amounts shown in Table 1 to prepare a photoresist composition.
  • compounds (I) and (II) indicate the type of compound in the upper part and the blending amount (parts by weight) in the lower part.
  • Triphenylsulfonium nonafluorobutanesulfonate (manufactured by ALDRICH) as PAG, 1,4-diazabicyclo [2.2.2] octane (manufactured by Junsei Chemical Co., Ltd.) as quencher, propylene glycol monomethyl ether (Hiroshima Wako Co., Ltd.) as solvent 1) and propylene glycol monomethyl ether acetate (manufactured by Keiyo Chemie Co., Ltd.) 1: 1 were used in a weight ratio shown in Table 1, respectively.
  • Evaluation Example 1 (Resolution / Sensitivity)
  • the photoresist solutions of all Examples and Comparative Examples were each spin-coated on a silicon wafer subjected to hexamethyldisilazane treatment (OAP manufactured by Tokyo Ohka Kogyo Co., Ltd.) and heated at 130 ° C. for 90 seconds to form a thin film.
  • the substrate having this thin film was drawn using an electron beam drawing apparatus (acceleration voltage 50 kV), baked at 100 ° C. for 60 seconds, and then a 2.38 wt% tetrabutylammonium hydroxide aqueous solution (Tokyo, Japan).
  • the film was developed with NMD-3) manufactured by Okaka Co., Ltd.
  • Table 2 shows the results of resolution (half pitch) and sensitivity (necessary electron beam dose) when a line / space pattern having a size of 1/1 was obtained from the observation results obtained with a scanning electron microscope.
  • Example 2 In the same manner as in Example 1, the above compounds were mixed and dissolved in the compositions and blending amounts shown in Table 3 to prepare a photoresist composition.
  • compounds (I) and (II) indicate the type of compound in the upper part and the blending amount (parts by weight) in the lower part.
  • Evaluation example 2 (resolution / sensitivity) Evaluation was performed in the same manner as in Evaluation Example 1 except that the heating temperature after spin coating the photoresist solution on the silicon wafer was 110 ° C. The results are shown in Table 4.
  • Evaluation Example 3 (Line Edge Roughness) A photograph of a line drawn using the photoresist solutions of Examples 2, 15 and Comparative Example 2 obtained in Evaluation Examples 1 and 2 is shown in FIG. LER (LER is a 30 nm line & space pattern manufactured by the method of Evaluation Examples 1 and 2 using a scanning electron microscope (SEM) S-4800 manufactured by Hitachi High-Technology Corporation, SEM photograph. As for image data obtained as above, the fluctuation of the edge of the resist pattern (roughness) is measured at 10 nm intervals by taking 10 lines of 1.5 ⁇ m in the lateral direction of the line pattern using SuMMIT, an image analysis software made by EUV Technology.
  • SEM scanning electron microscope
  • the LER of Example 1 is 7.9
  • the LER of Example 2 is 7.8, the LER of Example 11 is 5.5
  • the LER of Example 12 is 5.3
  • the LER of Example 14 is 6.2
  • LER of Example 16 was 5.9
  • LER of Example 17 was 5.9
  • LER of Example 18 was 5.4
  • LER of Example 19 was 5.0.
  • composition of the present invention can be used in the electric / electronic field and the optical field such as semiconductor devices.

Abstract

A composition comprising a compound represented by formula (I) and a compound represented by formula (II). In the formulae, R and R' independently represent a substituted or unsubstituted linear aliphatic hydrocarbon group or the like having 1-20 carbon atoms, or any one group selected from groups represented by formulae (1)-(3); R1 and R1' independently represent a hydroxy group, a substituted or unsubstituted linear alkoxy group or the like having 1-20 carbon atoms, or any one group selected from groups represented by formulae (1)-(3); and R2 and R2' independently represent a group represented by R1 , or the like; wherein two groups in at least one combination selected from the combination of R and R', the combination of R1 and R1' and the combination of R2 and R2' are different from each other.

Description

酸解離性溶解抑止基を有する組成物Composition having acid dissociable, dissolution inhibiting group
 本発明は組成物、それを用いた微細加工方法、その加工方法によって得られた半導体装置、及びその半導体装置を備える装置に関する。 The present invention relates to a composition, a fine processing method using the composition, a semiconductor device obtained by the processing method, and a device including the semiconductor device.
 極端紫外光(Extream Ultra Violet、EUV)又は電子線によるリソグラフィーは、半導体等の製造において、高生産性、高解像度の微細加工方法として有用であり、それに用いる高感度、高解像度のフォトレジストを開発することが求められている。これらリソグラフィーにおいて使用するフォトレジストは、所望する微細パターンの生産性、解像度等の観点から、その感度を向上させることが欠かせない。 Lithography using extreme ultraviolet light (Extreme Ultra Violet, EUV) or electron beam is useful as a high-productivity, high-resolution microfabrication method in the manufacture of semiconductors, etc., and develops high-sensitivity, high-resolution photoresists for use in it. It is requested to do. It is indispensable to improve the sensitivity of the photoresist used in these lithography from the viewpoint of the productivity and resolution of the desired fine pattern.
 極端紫外光による超微細加工の際に用いられるフォトレジストとしては、例えば、公知のKrFレーザーによる超微細加工の際に用いられていた化学増幅型ポリヒドロキシスチレン系フォトレジストが挙げられる。このレジストでは、50nm程度までの微細加工が可能であることが知られている。しかし、このレジストでは、極端紫外光による超微細加工の最大のメリットである50nm以細のパターンを作成すると、高感度、低レジストアウトガスをある程度まで実現できたとしても、最も重要なラインエッジラフネスを低減させることが不可能であるため、極端紫外光本来の性能を十分に引き出しているとは言えなかった。このような背景から、より高性能のフォトレジストを開発することが求められていた。 Examples of the photoresist used in ultrafine processing with extreme ultraviolet light include chemically amplified polyhydroxystyrene-based photoresists used in ultrafine processing with a known KrF laser. It is known that this resist can be finely processed up to about 50 nm. However, with this resist, the most important line edge roughness can be achieved even if high sensitivity and low resist outgas can be achieved to a certain extent by creating a pattern of 50 nm or less, which is the greatest merit of ultra-fine processing using extreme ultraviolet light. Since it cannot be reduced, it cannot be said that the original performance of extreme ultraviolet light has been sufficiently brought out. Against this background, it has been demanded to develop a higher performance photoresist.
 かかる課題を解決するために、本発明の発明者らは、レジスト化合物を開発した(特許文献1)。
 しかし、より高感度のレジスト組成物が求められるようになった。
In order to solve this problem, the inventors of the present invention have developed a resist compound (Patent Document 1).
However, a resist composition with higher sensitivity has been demanded.
国際公開第2009/075307号パンフレットInternational Publication No. 2009/075307 Pamphlet
 本発明の目的は、より高性能のレジスト組成物を提供することである。 An object of the present invention is to provide a resist composition with higher performance.
 本発明によれば、以下の組成物等が提供される。
1.式(I)の化合物及び式(II)の化合物を含む組成物。
Figure JPOXMLDOC01-appb-C000001
[式中、R及びR’はそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~12の芳香族基、これら基のうち2種以上を組み合わせた基、又は下記式(1)~(3)で表される基のいずれかである。
 R及びR1’はそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、置換もしくは無置換の炭素数6~10のアリーロキシル基、アルコキシアルキロキシ基、シロキシ基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレンオキシ基、置換もしくは無置換のアリーレンオキシ基、置換もしくは無置換のシリレンオキシ基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)とを組み合わせた基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~10の芳香族基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、酸解離性溶解抑止基、又は下記式(1)~(3)で表される基のいずれかである。
 R及びR2’はそれぞれRで表される基である。
 R及びR’、R及びR1’、並びにR及びR2’のうち少なくとも1つが互いに異なる。
Figure JPOXMLDOC01-appb-C000002
(式中、Arは、置換もしくは無置換の炭素数6~10のアリーレン基、置換もしくは無置換の炭素数6~10のアリーレン基を2つ以上組み合わせた基、又はアルキレン基及びエーテル結合から選択される1つ以上を置換もしくは無置換の炭素数6~10のアリーレン基と組み合わせた基であり、置換基を有する場合の置換基は、臭素、フッ素、ニトリル基又は炭素数1~10のアルキル基である。
 Rはそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族基、置換もしくは無置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、又は酸解離性溶解抑止基である。
 R、Rはそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数6~12の芳香族基、又はこれら基のうち2種以上を組み合わせた基である。
 Aはアルキレン基、エーテル結合及びアルキレン基から選択される2つ以上を組み合わせた基、又はアルキレン基1つ以上とエーテル結合1つ以上を組み合わせた基である。xは1~5、yは0~3、zは0~4の整数を表す。
 複数のR、R、R、R、R、R1’、R2’、R3’、Ar、Aは、それぞれ同じであっても異なっていてもよい。)]
2.前記Rが式(1)~(3)で表される基のいずれかであるか、又は前記Rがそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、もしくは酸解離性溶解抑止基であり、複数のRの1以上が酸解離性溶解抑止基である1に記載の組成物。
3.前記Rが上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのRのうち、一方は水酸基であり、他方がOR''で表される基であり、R''は水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基、又は酸素を含む基である1に記載の組成物。
4.前記R’が上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのR1’のうち、一方は水酸基であり、他方がOR''で表される基であり、R''は水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基又は酸素を含む基である3に記載の組成物。
5.下記式(A)を満たす1~4のいずれかに記載の組成物。
 0.01≦t×100/(s+t)≦90・・・(A)
(sは組成物中の式(I)の化合物の合計重量であり、tは組成物中の式(II)の化合物の合計重量である。)
6.前記Rが、下記式(I)~(IV)で表されるいずれかである1~5のいずれかに記載の組成物。
Figure JPOXMLDOC01-appb-C000003
(上記式(I)~(IV)において、
 αは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、又は置換もしくは無置換の炭素数6~10の芳香族基である。
 βは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が酸素と結合してなる基、又は三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基及び置換もしくは無置換の複環状脂肪族基から選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
 γは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が、酸素と結合してなる基、又は三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基及び置換もしくは無置換の複環状脂肪族基から選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
 δは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、又は置換もしくは無置換の炭素数6~10の芳香族基である。)
7.前記Rが、下記式(6)~(42)から選択される基である1~5のいずれかに記載の組成物。
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-I000001
Figure JPOXMLDOC01-appb-I000002
(式中、rはそれぞれ上記式(6)~(34),(38)~(42)で表される置換基のうちのいずれかを表す。)
8.前記式(I)の化合物及び式(II)の化合物がそれぞれ複数のRを含み、前記式(I)の化合物に含まれるRは全て端部に極性構造を含有せず、かつ前記式(II)の化合物に含まれるRのうち少なくとも2つは端部に極性構造を含有する1~7のいずれかに記載の組成物。
9.前記式(II)の化合物に含まれる複数のRの少なくとも2つの端部が、炭素数3~20のラクトン環、又は炭素数3~20の炭素環ケトンである8記載の組成物。
10.前記式(I)に含まれるRは、それぞれ下記式(8)~(11)、(16)、(17)及び(20)~(25)から選択される基であり、
 前記式(II)に含まれるRは、それぞれ下記式(18)、(19)、(26)~(29)、(43)及び(44)から選択される基である9記載の組成物。
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-I000003
11.1~10のいずれかに記載の組成物を用いた微細加工方法。
12.11に記載の微細加工方法により作製した半導体装置。
13.12に記載の半導体装置を備えた装置。
According to the present invention, the following compositions and the like are provided.
1. A composition comprising a compound of formula (I) and a compound of formula (II).
Figure JPOXMLDOC01-appb-C000001
[Wherein, R and R ′ are each hydrogen, a substituted or unsubstituted straight-chain aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms. Groups, substituted or unsubstituted cyclic aliphatic hydrocarbon groups having 3 to 20 carbon atoms, substituted or unsubstituted lactone rings having 4 to 20 carbon atoms, substituted or unsubstituted aromatic groups having 6 to 12 carbon atoms, and the like It is either a group in which two or more of the groups are combined, or a group represented by the following formulas (1) to (3).
R 1 and R 1 ′ are each hydrogen, hydroxyl group, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, substituted or unsubstituted A cyclic alkoxy group having 3 to 20 carbon atoms, a substituted or unsubstituted aryloxyl group having 6 to 10 carbon atoms, an alkoxyalkyloxy group, a siloxy group, and these groups and a divalent group (where a divalent group is A substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or unsubstituted silyleneoxy group, an ester bond group, a carbonate ester bond group, an ether bond group, or a combination of two or more of these groups A substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted carbon number of 3 An aliphatic hydrocarbon group having 12 branches, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, a substituted or unsubstituted carbon number 6 to 10 aromatic groups, alkoxyalkyl groups, carboxy groups, silyl groups, and these groups and divalent groups (wherein the divalent groups are substituted or unsubstituted alkylene groups, substituted or unsubstituted arylenes) A group, a substituted or unsubstituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), an acid dissociable, dissolution inhibiting group, Or any one of groups represented by the following formulas (1) to (3).
R 2 and R 2 ′ are each a group represented by R 1 .
R and R ', R 1 and R 1', and at least one of R 2 and R 2 'are different from each other.
Figure JPOXMLDOC01-appb-C000002
(In the formula, Ar is selected from a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, a group in which two or more substituted or unsubstituted arylene groups having 6 to 10 carbon atoms are combined, or an alkylene group and an ether bond) Or a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, and in the case of having a substituent, the substituent is bromine, fluorine, nitrile group or alkyl having 1 to 10 carbon atoms It is a group.
R 3 represents hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted, Unsubstituted cycloaliphatic group having 3 to 20 carbon atoms, substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted An alkoxy group having 3 to 12 carbon atoms, a substituted or unsubstituted cyclic alkoxy group having 3 to 20 carbon atoms, an alkoxyalkyl group, a carboxy group, a silyl group, and these groups and a divalent group (where, The divalent group is a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, an ester bond group, a carbonate bond group, an ether bond group, or A group formed by bonding two or more of these groups) or an acid dissociable, dissolution inhibiting group.
R 4 and R 5 are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted Alternatively, it is an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms, or a group obtained by combining two or more of these groups.
A 1 is a group combining two or more selected from an alkylene group, an ether bond and an alkylene group, or a group combining one or more alkylene groups and one or more ether bonds. x represents an integer of 1 to 5, y is 0 to 3, and z is an integer of 0 to 4.
A plurality of R 1 , R 2 , R 3 , R 4 , R 5 , R 1 ′ , R 2 ′ , R 3 ′ , Ar, and A 1 may be the same or different. ]]
2. R is any one of the groups represented by formulas (1) to (3), or R 1 is hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic carbon atom having 1 to 20 carbon atoms, respectively. Hydrogen group, substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, substituted or unsubstituted 6 to 6 carbon atoms 10 aromatic groups, substituted or unsubstituted linear alkoxy groups having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy groups having 3 to 12 carbon atoms, substituted or unsubstituted 3 to 20 carbon atoms A cyclic alkoxy group, an alkoxyalkyl group, a carboxy group, a silyl group, and a divalent group thereof (wherein the divalent group is a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted group) Or leave A substituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), or an acid dissociable, dissolution inhibiting group, 2. The composition according to 1 , wherein one or more of R 1 is an acid dissociable, dissolution inhibiting group.
3. R is any of the groups represented by the above formulas (1) to (3), and one of two R 1 existing on the same aromatic ring is a hydroxyl group, and the other is OR ″. R ″ is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or a group having 3 to 20 carbon atoms. 2. The composition according to 1, which is a cyclic aliphatic hydrocarbon group, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
4). R ′ is any one of the groups represented by the above formulas (1) to (3), and one of two R 1 ′ existing on the same aromatic ring is a hydroxyl group and the other is OR R '' is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or 3 to 3 carbon atoms. 4. The composition according to 3, which is a 20 cycloaliphatic hydrocarbon group, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
5. 5. The composition according to any one of 1 to 4, which satisfies the following formula (A).
0.01 ≦ t × 100 / (s + t) ≦ 90 (A)
(S is the total weight of the compound of formula (I) in the composition, and t is the total weight of the compound of formula (II) in the composition.)
6). 6. The composition according to any one of 1 to 5, wherein R 3 is any one of the following formulas (I) to (IV):
Figure JPOXMLDOC01-appb-C000003
(In the above formulas (I) to (IV),
α is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
β is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group, a group formed by bonding a substituted or unsubstituted bicyclic aliphatic group to oxygen, or A linear group having 1 to 10 carbon atoms and a group selected from a quaternary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group A group formed by combining an aliphatic hydrocarbon group is a group formed by bonding with oxygen.
γ is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group or a substituted or unsubstituted bicyclic aliphatic group bonded to oxygen, or A straight chain having 1 to 10 carbon atoms and a group selected from a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group A group formed by combining a group of aliphatic hydrocarbon groups is a group formed by bonding with oxygen.
δ is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms. )
7. 6. The composition according to any one of 1 to 5, wherein R 3 is a group selected from the following formulas (6) to (42).
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-I000001
Figure JPOXMLDOC01-appb-I000002
(Wherein, r represents any one of the substituents represented by the above formulas (6) to (34) and (38) to (42)).
8). The compound of the formula (I) and the compound of the formula (II) each contain a plurality of R 3 s , all R 3 contained in the compound of the formula (I) do not contain a polar structure at the end, and the formula 8. The composition according to any one of 1 to 7, wherein at least two of R 3 contained in the compound of (II) contain a polar structure at the end.
9. 9. The composition according to 8, wherein at least two ends of R 3 contained in the compound of the formula (II) are a lactone ring having 3 to 20 carbon atoms or a carbocyclic ketone having 3 to 20 carbon atoms.
10. R 3 contained in the formula (I) is a group selected from the following formulas (8) to (11), (16), (17) and (20) to (25),
The composition according to 9, wherein R 3 contained in the formula (II) is a group selected from the following formulas (18), (19), (26) to (29), (43) and (44): .
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-I000003
11. A microfabrication method using the composition according to any one of 11.1 to 10.
A semiconductor device manufactured by the microfabrication method described in 12.11.
A device comprising the semiconductor device according to 13.12.
 本発明によれば、より高性能のレジスト組成物を提供できる。 According to the present invention, a higher-performance resist composition can be provided.
製造例1の環状化合物P-1のH-NMRの測定結果を示す図である。FIG. 3 is a graph showing the measurement result of 1 H-NMR of cyclic compound P-1 of Production Example 1. 製造例2の環状化合物P-2のH-NMRの測定結果を示す図である。FIG. 4 is a diagram showing the measurement result of 1 H-NMR of cyclic compound P-2 of Production Example 2. 製造例3の環状化合物A-1のH-NMRの測定結果を示す図である。FIG. 4 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-1 of Production Example 3. 製造例4の環状化合物A-2のH-NMRの測定結果を示す図である。FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-2 of Production Example 4. 製造例5の環状化合物A-3のH-NMRの測定結果を示す図である。FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-3 in Production Example 5. 製造例8の環状化合物A-6のH-NMRの測定結果を示す図である。FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-6 of Production Example 8. 製造例9の環状化合物A-7のH-NMRの測定結果を示す図である。FIG. 10 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-7 of Production Example 9. 製造例10の環状化合物P-3のH-NMRの測定結果を示す図である。FIG. 3 is a diagram showing the measurement result of 1 H-NMR of cyclic compound P-3 of Production Example 10. 製造例11の環状化合物A-8のH-NMRの測定結果を示す図である。FIG. 6 is a graph showing the results of 1 H-NMR measurement of cyclic compound A-8 in Production Example 11. 製造例12の環状化合物A-9のH-NMRの測定結果を示す図である。FIG. 6 is a diagram showing the measurement result of 1 H-NMR of cyclic compound A-9 in Production Example 12. 製造例13の環状化合物A-10のH-NMRの測定結果を示す図である。FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-10 of Production Example 13. 製造例14の環状化合物A-11のH-NMRの測定結果を示す図である。FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-11 of Production Example 14. 製造例15の環状化合物A-12のH-NMRの測定結果を示す図である。FIG. 6 is a graph showing the 1 H-NMR measurement result of cyclic compound A-12 of Production Example 15. 実施例2、実施例15、比較例2のフォトレジスト溶液を用いて描画したラインを示す写真である。It is a photograph which shows the line drawn using the photoresist solution of Example 2, Example 15, and Comparative Example 2. FIG.
 本発明の組成物は式(I)の化合物及び式(II)の化合物を含む。
Figure JPOXMLDOC01-appb-C000006
The composition of the present invention comprises a compound of formula (I) and a compound of formula (II).
Figure JPOXMLDOC01-appb-C000006
 式中、R及びR’はそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~12の芳香族基、これら基のうち2種以上を組み合わせた基、又は下記式(1)~(3)で表される基のいずれかである。
 ここで、芳香族基とは、ベンゼン環を含む基である。
In the formula, R and R ′ are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms. Substituted or unsubstituted cyclic aliphatic hydrocarbon groups having 3 to 20 carbon atoms, substituted or unsubstituted lactone rings having 4 to 20 carbon atoms, substituted or unsubstituted aromatic groups having 6 to 12 carbon atoms, and these groups Among these groups, or groups represented by the following formulas (1) to (3).
Here, the aromatic group is a group containing a benzene ring.
 「2種以上を組み合わせた基」とは、2種以上が単結合した基、又は2種以上が縮合して環を形成した基を意味する。例えば下記の基は、無置換の炭素数1の直鎖状脂肪族炭化水素基と、無置換の炭素数4の分岐を有する脂肪族炭化水素基と、無置換の炭素数6の環状脂肪族炭化水素基と、無置換の炭素数10の芳香族基とを組み合わせた基である。
Figure JPOXMLDOC01-appb-C000007
“Group combining two or more types” means a group in which two or more types are single-bonded or a group in which two or more types are condensed to form a ring. For example, the following groups include an unsubstituted straight-chain aliphatic hydrocarbon group having 1 carbon atom, an unsubstituted aliphatic hydrocarbon group having 4 carbon atoms, and an unsubstituted cycloaliphatic group having 6 carbon atoms. It is a group in which a hydrocarbon group and an unsubstituted aromatic group having 10 carbon atoms are combined.
Figure JPOXMLDOC01-appb-C000007
 R及びR’は、好ましくはそれぞれ置換もしくは無置換の炭素数6~12の芳香族基、又は下記式(1)~(3)で表わされる基であり、より好ましくは下記式(2)で表わされる基である。 R and R ′ are each preferably a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms or a group represented by the following formulas (1) to (3), more preferably in the following formula (2). The group represented.
 上記において、置換されている場合の置換基としては、炭素に結合可能なヘテロ元素含有の1価の基を示す。具体例として、フッ素、塩素、臭素等のハロゲン基、トリフルオロメチル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基等の含ハロゲン炭化水素基、アセチル基、ベンゾイル基等のカルボニル含有基、メトキシ基、エトキシ基等のエーテル結合を含む基、トリメチルシリル基、トリメトキシシリル基等の珪素含有基、ジエチルアミノ基等の窒素含有基が挙げられる。 In the above, the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon. Specific examples include halogen groups such as fluorine, chlorine and bromine, halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group, carbonyl-containing groups such as acetyl group and benzoyl group, methoxy group And groups containing an ether bond such as ethoxy group, silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group, and nitrogen-containing groups such as diethylamino group.
 R及びR1’はそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、置換もしくは無置換の炭素数6~10のアリーロキシル基、アルコキシアルキロキシ基、シロキシ基、これらの基と2価の基(置換もしくは無置換のアルキレンオキシ基、置換もしくは無置換のアリーレンオキシ基、置換もしくは無置換のシリレンオキシ基、エステル結合基(-CO-)、炭酸エステル結合基(-CO-)、エーテル結合(-O-)基、又はこれらの基が2以上結合してなる基)とを組み合わせた基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~10の芳香族基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基)が結合した基、酸解離性溶解抑止基、又は下記式(1)~(3)で表される基のいずれかである。 R 1 and R 1 ′ are each hydrogen, hydroxyl group, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, substituted or unsubstituted A cyclic alkoxy group having 3 to 20 carbon atoms, a substituted or unsubstituted aryloxyl group, an alkoxyalkyloxy group, a siloxy group, a divalent group (substituted or unsubstituted alkyleneoxy group) Substituted or unsubstituted aryleneoxy group, substituted or unsubstituted silyleneoxy group, ester bond group (—CO 2 —), carbonate bond group (—CO 3 —), ether bond (—O—) group, or A group formed by combining two or more of these groups), a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted group. Substituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, substituted Or an unsubstituted aromatic group having 6 to 10 carbon atoms, an alkoxyalkyl group, a carboxy group, a silyl group, and these groups and a divalent group (substituted or unsubstituted alkylene group, substituted or unsubstituted arylene group, substituted Or an unsubstituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), an acid dissociable, dissolution inhibiting group, or the following formula (1 ) To (3).
 置換もしくは無置換のアルキレンオキシ基、置換もしくは無置換のアリーレンオキシ基、置換もしくは無置換のシリレンオキシ基、エステル結合基(-CO-)、炭酸エステル結合基(-CO-)、エーテル結合(-O-)基、又はこれらの基が2以上結合してなる基である2価の基は、好ましくは、置換もしくは無置換のアルキレンオキシ基、置換もしくは無置換のアリーレンオキシ基、置換もしくは無置換のシリレンオキシ基、これらの基が2以上結合してなる基、又はこれらの基とエステル結合(-CO-)、炭酸エステル結合(-CO-)もしくはエーテル結合(-O-)が結合してなる基である。 Substituted or unsubstituted alkyleneoxy group, substituted or unsubstituted aryleneoxy group, substituted or unsubstituted silyleneoxy group, ester bond group (—CO 2 —), carbonate bond group (—CO 3 —), ether bond The (—O—) group or a divalent group formed by bonding two or more of these groups is preferably a substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or An unsubstituted silyleneoxy group, a group formed by bonding two or more of these groups, or an ester bond (—CO 2 —), a carbonate ester bond (—CO 3 —) or an ether bond (—O—) of these groups Is a group formed by bonding.
 置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である2価の基は、好ましくは、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、これらの基が2以上結合してなる基、これらの基1以上とエステル結合、炭酸エステル結合及びエーテル結合から選択される1以上を組み合わせた基である。 A substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, an ester bond group, a carbonate bond group, an ether bond group, or a group formed by bonding two or more of these groups. The divalent group is preferably a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, a group formed by bonding two or more of these groups, or these groups 1 This is a group combining at least one selected from an ester bond, a carbonate ester bond and an ether bond.
 上記において、置換されている場合の置換基としては、炭素に結合可能なヘテロ元素含有の1価の基を示す。具体例として、フッ素、塩素、臭素等のハロゲン基、トリフルオロメチル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基等の含ハロゲン炭化水素基、アセチル基、ベンゾイル基等のカルボニル含有基、メトキシ基、エトキシ基等のエーテル結合を含む基、トリメチルシリル基、トリメトキシシリル基等の珪素含有基、ジエチルアミノ基等の窒素含有基が挙げられる。 In the above, the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon. Specific examples include halogen groups such as fluorine, chlorine and bromine, halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group, carbonyl-containing groups such as acetyl group and benzoyl group, methoxy group And groups containing an ether bond such as ethoxy group, silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group, and nitrogen-containing groups such as diethylamino group.
 R及びR1’は、好ましくはそれぞれ水酸基、置換もしくは無置換の炭素数1~4の直鎖状もしくは分岐アルコキシ基、又は下記式(1)~(3)で表される基のいずれかである。
 好ましくは、式(I)に含まれる8つのRのうち少なくとも2つは水酸基であり、式(II)に含まれる8つのR1’のうち少なくとも2つは水酸基である。
 好ましくは、式(I)に含まれる8つのRのうち少なくとも4つは水酸基であり、式(II)に含まれる8つのR1’のうち少なくとも4つは水酸基である。
 好ましくは、各ベンゼン環に結合している2つのRのうち、少なくとも一方のRが水酸基であり、かつ各ベンゼン環に結合している2つのR1’のうち、少なくとも一方のR1’が水酸基である。
R 1 and R 1 ′ are each preferably a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 4 carbon atoms, or a group represented by the following formulas (1) to (3). It is.
Preferably, at least two of the eight R 1 included in the formula (I) are hydroxyl groups, and at least two of the eight R 1 ′ included in the formula (II) are hydroxyl groups.
Preferably, at least four of the eight R 1 included in the formula (I) are hydroxyl groups, and at least four of the eight R 1 ′ included in the formula (II) are hydroxyl groups.
Preferably, among bonded to two and the R 1 on each benzene ring, at least one of R 1 is a hydroxyl group, and among bond to have two R 1 'to each benzene ring, at least one of R 1 ' Is a hydroxyl group.
 より好ましくはベンゼン環の一方のR及びR1’が水酸基であり、他方のR及びR1’が炭素数1~4の直鎖状もしくは分岐アルコキシ基である。すなわち、各ベンゼン環に結合している2つのRのうち、少なくとも一方のRが水酸基であって他方のRが炭素数1~4の直鎖状もしくは分岐アルコキシ基であり、かつ各ベンゼン環に結合している2つのR1’のうち、少なくとも一方のR1’が水酸基であって他方のR1’が炭素数1~4の直鎖状もしくは分岐アルコキシ基である。 More preferably, one R 1 and R 1 ′ of the benzene ring is a hydroxyl group, and the other R 1 and R 1 ′ is a linear or branched alkoxy group having 1 to 4 carbon atoms. That is, of the two R 1 bonded to each benzene ring, at least one R 1 is a hydroxyl group and the other R 1 is a linear or branched alkoxy group having 1 to 4 carbon atoms, and each Of the two R 1 ′ bonded to the benzene ring, at least one R 1 ′ is a hydroxyl group and the other R 1 ′ is a linear or branched alkoxy group having 1 to 4 carbon atoms.
 上記において、置換されている場合の置換基としては、炭素に結合可能なヘテロ元素含有の1価の基を示す。具体例として、フッ素、塩素、臭素等のハロゲン基、トリフルオロメチル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基等の含ハロゲン炭化水素基、アセチル基、ベンゾイル基等のカルボニル含有基、メトキシ基、エトキシ基等のエーテル結合を含む基、トリメチルシリル基、トリメトキシシリル基等の珪素含有基、ジエチルアミノ基等の窒素含有基が挙げられる。 In the above, the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon. Specific examples include halogen groups such as fluorine, chlorine and bromine, halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group, carbonyl-containing groups such as acetyl group and benzoyl group, methoxy group And groups containing an ether bond such as ethoxy group, silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group, and nitrogen-containing groups such as diethylamino group.
 R及びR2’はそれぞれRで表される基である。R及びR2’は、好ましくは水素である。 R 2 and R 2 ′ are each a group represented by R 1 . R 2 and R 2 ′ are preferably hydrogen.
 R及びR’、R及びR1’、並びにR及びR2’のうち少なくとも1つが互いに異なる。好ましくはR及びR’が異なる。 R and R ', R 1 and R 1', and at least one of R 2 and R 2 'are different from each other. Preferably R and R ′ are different.
Figure JPOXMLDOC01-appb-C000008
 式中、Arは、置換もしくは無置換の炭素数6~10のアリーレン基、置換もしくは無置換の炭素数6~10のアリーレン基を2つ以上組み合わせた基、又はアルキレン基及びエーテル結合から選択される1つ以上を置換もしくは無置換の炭素数6~10のアリーレン基と組み合わせた基であり、置換基を有する場合の置換基は、臭素、フッ素、ニトリル基又は炭素数1~10のアルキル基である。ここで2以上の置換基を「組み合わせた基」とは、2以上の置換基を単結合した基を意味する。
 好ましくは、Arは置換もしくは無置換の炭素数6~10のアリーレン基であり、より好ましくはフェニレン基である。
Figure JPOXMLDOC01-appb-C000008
In the formula, Ar is selected from a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, a group in which two or more substituted or unsubstituted arylene groups having 6 to 10 carbon atoms are combined, or an alkylene group and an ether bond. Or a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, and in the case of having a substituent, the substituent is bromine, fluorine, a nitrile group, or an alkyl group having 1 to 10 carbon atoms. It is. Here, the “group in which two or more substituents are combined” means a group in which two or more substituents are single-bonded.
Ar is preferably a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, and more preferably a phenylene group.
 Rはそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族基、置換もしくは無置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基(-COO-)、炭酸エステル結合基(-CO-)、エーテル結合基(-O-)、又はこれらの基が2以上結合してなる基)が結合した基、又は酸解離性溶解抑止基である。 R 3 represents hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted, Unsubstituted cycloaliphatic group having 3 to 20 carbon atoms, substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted A branched C3-C12 alkoxy group, a substituted or unsubstituted C3-C20 cyclic alkoxy group, an alkoxyalkyl group, a carboxy group, a silyl group, a divalent group (substituted or unsubstituted). substituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, an ester bond group (-COO-), carbonate bond group (-CO 3 -), ether formation Group (-O-), or these groups more bonds to become group) bonded group, or an acid dissociable, dissolution inhibiting group.
 ここで、環状脂肪族基には、環状脂肪族炭化水素基のほか、環状エーテル、ラクトン環が含まれる。 Here, the cyclic aliphatic group includes a cyclic ether and a lactone ring in addition to the cyclic aliphatic hydrocarbon group.
 上記において、置換されている場合の置換基としては、炭素に結合可能なヘテロ元素含有の1価の基を示す。具体例として、フッ素、塩素、臭素等のハロゲン基、トリフルオロメチル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基等の含ハロゲン炭化水素基、アセチル基、ベンゾイル基等のカルボニル含有基、メトキシ基、エトキシ基等のエーテル結合を含む基、トリメチルシリル基、トリメトキシシリル基等の珪素含有基、ジエチルアミノ基等の窒素含有基が挙げられる。 In the above, the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon. Specific examples include halogen groups such as fluorine, chlorine and bromine, halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group, carbonyl-containing groups such as acetyl group and benzoyl group, methoxy group And groups containing an ether bond such as ethoxy group, silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group, and nitrogen-containing groups such as diethylamino group.
 Rは好ましくは、置換もしくは無置換の炭素数3~20の環状脂肪族基、もしくは置換もしくは無置換の炭素数6~10の芳香族基と、無置換のアルキレン基とエステル結合及びエーテル結合から選択される1以上を組み合わせた基が結合した基、又は酸解離性溶解抑止基である。 R 3 is preferably a substituted or unsubstituted cyclic aliphatic group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, an unsubstituted alkylene group, an ester bond, and an ether bond. A group having a combination of one or more selected from the above, or an acid dissociable, dissolution inhibiting group.
 R、Rはそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数6~12の芳香族基、又はこれら基のうち2種以上を組み合わせて構成される基である。R,Rは水素又はアルキル基が好ましい。 R 4 and R 5 are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted Alternatively, they are an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms, or a group formed by combining two or more of these groups. R 4 and R 5 are preferably hydrogen or an alkyl group.
 上記において、置換されている場合の置換基としては、炭素に結合可能なヘテロ元素含有の1価の基を示す。具体例として、フッ素、塩素、臭素等のハロゲン基、トリフルオロメチル基、ペンタフルオロフェニル基、トリフルオロメチルフェニル基等の含ハロゲン炭化水素基、アセチル基、ベンゾイル基等のカルボニル含有基、メトキシ基、エトキシ基等のエーテル結合を含む基、トリメチルシリル基、トリメトキシシリル基等の珪素含有基、ジエチルアミノ基等の窒素含有基が挙げられる。 In the above, the substituent when substituted is a monovalent group containing a hetero element capable of bonding to carbon. Specific examples include halogen groups such as fluorine, chlorine and bromine, halogen-containing hydrocarbon groups such as trifluoromethyl group, pentafluorophenyl group and trifluoromethylphenyl group, carbonyl-containing groups such as acetyl group and benzoyl group, methoxy group And groups containing an ether bond such as ethoxy group, silicon-containing groups such as trimethylsilyl group and trimethoxysilyl group, and nitrogen-containing groups such as diethylamino group.
 Aはアルキレン基、エーテル結合及びアルキレン基から選択される2つ以上組み合わせた基、又はアルキレン基1つ以上とエーテル結合1つ以上を組み合わせた基である。Aは単結合又はオキシメチレン基(-O-CH-)が好ましく、単結合がより好ましい。 A 1 is a group in which two or more selected from an alkylene group, an ether bond and an alkylene group are combined, or a group in which one or more alkylene groups and one or more ether bonds are combined. A 1 is preferably a single bond or an oxymethylene group (—O—CH 2 —), and more preferably a single bond.
 xは1~5、好ましくは1である。yは0~3、好ましくは0又は1である。zは0~4、好ましくは0又は1である。好ましくはx=1、y=1及びz=0、又はx=1、y=0及びz=0である。 X is 1 to 5, preferably 1. y is 0 to 3, preferably 0 or 1. z is 0 to 4, preferably 0 or 1. Preferably x = 1, y = 1 and z = 0, or x = 1, y = 0 and z = 0.
 複数のR、R、R、R、R、R1’、R2’、R3’、Ar、Aは、それぞれ同じであっても異なっていてもよい。 A plurality of R 1 , R 2 , R 3 , R 4 , R 5 , R 1 ′ , R 2 ′ , R 3 ′ , Ar, and A 1 may be the same or different.
 式(I)の化合物において、好ましくはRが上記式(1)~(3)の基のいずれかであるか、又はRが上記Rで表わされるいずれかの基であって複数のRの1以上が酸解離性溶解抑止基である。 In the compound of the formula (I), preferably R is any one of the groups of the above formulas (1) to (3), or R 1 is any group represented by the above R 3 and a plurality of R 1 or more of 1 is an acid dissociable, dissolution inhibiting group.
 また、式(I)の化合物において、好ましくはRが上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのRのうち、一方は水酸基であり、他方がOR''で表される基であり、R''は、水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基、又は酸素を含む基である。 In the compound of formula (I), preferably R is any one of the groups represented by the above formulas (1) to (3), and two R 1 existing on the same aromatic ring, One is a hydroxyl group and the other is a group represented by OR ″, and R ″ has hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, and a branch having 3 to 12 carbon atoms. An aliphatic hydrocarbon group, a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
 またこの場合、さらに好ましくは、式(II)の化合物においてR’が上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのR1’のうち、一方は水酸基であり、他方がOR''で表される基であり、R''は水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基又は酸素を含む基である。 In this case, more preferably, in the compound of the formula (II), R ′ is any one of the groups represented by the above formulas (1) to (3) and two Rs existing on the same aromatic ring. 1 ′ , one is a hydroxyl group and the other is a group represented by OR ″, R ″ is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, or 3 to 12 carbon atoms. A branched aliphatic hydrocarbon group, a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
 また、式(I)の化合物において、複数のRのうち少なくとも2つが水酸基であり、複数のR及び複数のRのうち少なくとも1つが上記式(1)~(3)の基のいずれかであり、かつ、式(II)の化合物において、複数のR1’のうち少なくとも2つが水酸基であり、複数のR’及び複数のR1’のうち少なくとも2つが上記式(1)~(3)の基のいずれかである場合においては、式(I)の化合物に含まれる複数のRは全て端部に極性構造を含有せず、かつ、式(II)の化合物に含まれる複数のRのうち少なくとも2つは端部に極性構造を含有することが好ましい。
 より好ましくは、上記の場合においては、式(I)の化合物に含まれる複数のRは全て端部に極性構造を含有せず、かつ式(II)の化合物に含まれる複数のRは全て端部に極性構造を含有することが好ましい。
In the compound of the formula (I), at least two of the plurality of R 1 are hydroxyl groups, and at least one of the plurality of R and the plurality of R 1 is any one of the groups of the above formulas (1) to (3). In the compound of formula (II), at least two of the plurality of R 1 ′ are hydroxyl groups, and at least two of the plurality of R ′ and the plurality of R 1 ′ are represented by the above formulas (1) to (3 In the case of any of the groups of the formula (I), the plurality of R 3 contained in the compound of the formula (I) all do not contain a polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) At least two of R 3 preferably contain a polar structure at the end.
More preferably, in the above case, the plurality of R 3 contained in the compound of the formula (I) all do not contain a polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) are All preferably contain polar structures at the ends.
 ここで「端部に極性構造を含有する」ということは、Rが「水酸基、極性構造を含有する置換の炭素数1~20の直鎖状脂肪族炭化水素基、極性構造を含有する置換の炭素数3~12の分岐を有する脂肪族炭化水素基、極性構造を含有する置換の炭素数3~20の環状脂肪族基、極性構造を含有する置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、これらの基と2価の基(置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基)が結合した基」であることを意味する。ここで「極性構造を含有する」とは、酸素原子、窒素原子、硫黄原子、ハロゲン原子(フッ素原子、塩素原子、臭素原子、ヨウ素原子)を含むことを意味する。例えば、カルボニル基、エーテル結合、エステル結合、アミノ基、アミド基、ハロゲン基を含有することが挙げられる。 Here, “having a polar structure at the end” means that R 3 is “a hydroxyl group, a substituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms containing a polar structure, a substituent containing a polar structure” An aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted cyclic aliphatic group having 3 to 20 carbon atoms containing a polar structure, and a substituted aromatic group having 6 to 10 carbon atoms containing a polar structure A substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, a substituted or unsubstituted cyclic alkoxy group having 3 to 20 carbon atoms, Alkoxyalkyl group, carboxy group, and these groups and divalent groups (substituted or unsubstituted alkylene group, substituted or unsubstituted arylene group, substituted or unsubstituted silylene group, ester bond group, carbonate bond group , An ether bond group, or a group formed by bonding two or more of these groups). Here, “containing a polar structure” means containing an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom). Examples thereof include a carbonyl group, an ether bond, an ester bond, an amino group, an amide group, and a halogen group.
 上記とすることにより、本願組成物をレジスト組成物として用いた場合に以下の効果がある。
・一方の(式(I)の化合物の)Rを全て「端部に極性構造を含有しない」ものにすることによって、非照射領域の溶解を防ぎ、ラフネスの値が悪化することを防ぐ。
・他方の(式(II)の化合物の)Rのうち少なくとも2つを「端部に極性構造を含有する」ものにすることによって、式(II)の化合物のRと、式(I)の化合物の水酸基(R)が水素結合し、膜強度が向上し、結果としてさらにラフネス(LWR)の値が低くなる(=現像の線が綺麗になる)。
By setting it as the above, there exists the following effect, when this application composition is used as a resist composition.
-By making all of R 3 (of the compound of formula (I)) "not containing a polar structure at the end", dissolution of the non-irradiated region is prevented and deterioration of the roughness value is prevented.
-By making at least two of R 3 (of the compound of formula (II)) "contain polar structures at the ends", R 3 of the compound of formula (II) and formula (I hydroxyl group of a compound of) (R 1) is hydrogen bonded, improves film strength, results also the value of the roughness (LWR) as drops (= development line is clean).
 より好ましくは、R’を構成しているRのうち、最も外郭に位置している原子と、極性構造を構成する原子(酸素原子、窒素原子、硫黄原子、ハロゲン原子(フッ素原子、塩素原子、臭素原子、ヨウ素原子))のうち最も外郭に位置している原子との距離が6Å以下である。
Figure JPOXMLDOC01-appb-C000009
More preferably, among R 3 constituting R ′, the atom located most outside and the atoms constituting the polar structure (oxygen atom, nitrogen atom, sulfur atom, halogen atom (fluorine atom, chlorine atom) , Bromine atom, iodine atom)) and the most distant atom is 6 cm or less.
Figure JPOXMLDOC01-appb-C000009
 さらに好ましくは、Rの末端が、カルボニル基で置換された炭素数3~20の環状脂肪族炭化水素基(炭素環ケトン等)(上図の一番左の末端)、又はその環を構成する炭素原子の一部が酸素原子に置き換わっている基(ラクトン環等)(上図の一番右の末端)である。 More preferably, the terminal of R 3 constitutes a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms (such as a carbocyclic ketone) substituted with a carbonyl group (the leftmost terminal in the above figure) or its ring. This is a group (lactone ring or the like) in which a part of carbon atoms to be replaced with oxygen atoms (the rightmost terminal in the above figure).
 Rは、下記式(I)~(IV)で表されるいずれかであると好ましい。
Figure JPOXMLDOC01-appb-C000010
R 3 is preferably any one of the following formulas (I) to (IV).
Figure JPOXMLDOC01-appb-C000010
 上記式(I)~(IV)において、αは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、又は置換もしくは無置換の炭素数6~10の芳香族基である。
 αは、好ましくは置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基であり、より好ましくはメチレンである。
In the above formulas (I) to (IV), α is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, or a substituted or unsubstituted aliphatic group having 3 to 10 carbon atoms. It is a hydrocarbon group, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
α is preferably a substituted or unsubstituted straight-chain aliphatic hydrocarbon group having 1 to 10 carbon atoms, and more preferably methylene.
 βは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が酸素と結合してなる基、又はこれらから選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
 βが、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基であるとき、好ましくは、これら基に含まれる三級炭素が酸素原子と結合する。βが、ベンゼン環を含む基であるとき、好ましくは、ベンジル位の炭素が酸素原子と結合する。
β is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group, a group formed by bonding a substituted or unsubstituted bicyclic aliphatic group to oxygen, or these A group formed by combining oxygen and a straight-chain aliphatic hydrocarbon group having 1 to 10 carbon atoms is a group formed by bonding with oxygen.
When β is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, or a substituted or unsubstituted monocyclic aliphatic group, preferably a tertiary carbon contained in these groups is bonded to an oxygen atom. When β is a group containing a benzene ring, the benzylic carbon is preferably bonded to an oxygen atom.
 γは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が、酸素と結合してなる基、又はこれらから選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
 γは、好ましくは三級脂肪族構造、単環状脂肪族構造もしくは複環状脂肪族構造が酸素に結合して成る基である。
γ is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group or a substituted or unsubstituted bicyclic aliphatic group bonded to oxygen, or A group formed by combining a group selected from these and a linear aliphatic hydrocarbon group having 1 to 10 carbon atoms is a group formed by bonding with oxygen.
γ is preferably a group in which a tertiary aliphatic structure, a monocyclic aliphatic structure or a polycyclic aliphatic structure is bonded to oxygen.
 δは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、又は置換もしくは無置換の炭素数6~10の芳香族基である。 δ is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
 上記式(I)~(IV)において、脂肪族炭化水素基(α)は好ましくはアルキレンである。
 α,δは、直鎖状又は分岐脂肪族炭化水素基が好ましい。α~δの直鎖状又は分岐脂肪族炭化水素基の炭素数は1~4が好ましく、メチレン基が最も好ましい。
In the above formulas (I) to (IV), the aliphatic hydrocarbon group (α) is preferably alkylene.
α and δ are preferably linear or branched aliphatic hydrocarbon groups. The α-δ linear or branched aliphatic hydrocarbon group preferably has 1 to 4 carbon atoms, and most preferably a methylene group.
 β、γの三級脂肪族基としてはt-ブチル、t-アミル等が挙げられる。芳香族基はベンゼン環を含む基(ベンゼン環はシクロアルキル又は環状エーテルと縮合していてもよい)であり、例えば、フェニル、ナフチル、テトラヒドロナフチル、インダニル、クロマニル等が挙げられる。単環状脂肪族基としてはシクロペンチル、シクロヘキシル等が挙げられる。複環状脂肪族基としてはノルボルニル、アダマンチル、ビアダマンチル、ジアマンチル等が挙げられる。また、単環又は複環の環状脂肪族基には、例えば後述する基(28),(29),(43),(44)等のような、環状エーテル、オキシ酸のラクトン等も含む。 Examples of β, γ tertiary aliphatic groups include t-butyl, t-amyl and the like. The aromatic group is a group containing a benzene ring (the benzene ring may be condensed with cycloalkyl or cyclic ether), and examples thereof include phenyl, naphthyl, tetrahydronaphthyl, indanyl, chromanyl and the like. Examples of monocyclic aliphatic groups include cyclopentyl and cyclohexyl. Examples of the bicyclic aliphatic group include norbornyl, adamantyl, biadamantyl, diamantyl and the like. In addition, the monocyclic or polycyclic aliphatic group includes cyclic ethers, lactones of oxyacids such as groups (28), (29), (43), and (44) described later.
 β、γの置換基は好ましくはアルキル、アルコキシ、カルボキシ、カルボニルである。置換基がカルボニルのときは、例えば後述する基(18),(19),(26),(27)等のように、環の中に含む。
 置換基のアルキル、アルキレン、アルコキシの炭素数は好ましくは1~4である。
The substituents for β and γ are preferably alkyl, alkoxy, carboxy, and carbonyl. When the substituent is carbonyl, it is included in the ring, for example, as described later (18), (19), (26), (27) and the like.
The number of carbon atoms of the substituent alkyl, alkylene or alkoxy is preferably 1 to 4.
 下記に限定されるものではないが、Rの具体例として、下記式(6)~(42)に示される基を挙げることができる。
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-I000004
(式中、rはそれぞれ上記式(6)~(34),(38)~(42)で表される置換基のうちのいずれかを表す。)
 また、Rで好ましい構造は上記の(8),(10),(19),(20),(28),(43)である。
Although not limited to the following, specific examples of R 3 include groups represented by the following formulas (6) to (42).
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-I000004
(Wherein, r represents any one of the substituents represented by the above formulas (6) to (34) and (38) to (42)).
Preferred structures for R 3 are (8), (10), (19), (20), (28), and (43).
 本発明に用いる環状化合物は、例えば、公知の方法により、酸触媒存在下、対応する構造のアルデヒド化合物と、溶解性調整基と水酸基を併せて有する芳香族化合物との縮合環化反応により、カリックスレゾルシナレン誘導体(前駆体)を合成し、R等の基に対応する化合物を、エステル化反応、エーテル化反応、アセタール化反応等により前駆体に導入することで合成できる。具体例は、後述する実施例で説明する。 The cyclic compound used in the present invention can be obtained by, for example, a calix by a condensation cyclization reaction between an aldehyde compound having a corresponding structure and an aromatic compound having both a solubility adjusting group and a hydroxyl group in the presence of an acid catalyst by a known method. A resorcinalene derivative (precursor) is synthesized, and a compound corresponding to a group such as R 3 is introduced into the precursor by an esterification reaction, an etherification reaction, an acetalization reaction, or the like. Specific examples will be described in the embodiments described later.
 本発明の組成物は、好ましくは式(I)の化合物及び式(II)の化合物をフォトレジスト基材として含むフォトレジスト組成物であり、上記のように2種のフォトレジスト基材を混合することにより、フォトレジスト組成物の耐熱性、感度及び解像性を向上できる。 The composition of the present invention is preferably a photoresist composition comprising a compound of formula (I) and a compound of formula (II) as a photoresist substrate, and the two photoresist substrates are mixed as described above. As a result, the heat resistance, sensitivity, and resolution of the photoresist composition can be improved.
 式(I)の化合物及び式(II)の化合物において、好ましくは、R及びR’はそれぞれ式(2)で表わされる基であり、R及びR2’は水素であり、同一の芳香環上に存在する2つのR及びR1’のうち一方が水酸基であり、他方が同じ炭素数1~4の直鎖状又は分岐アルコキシ基である。R及びR’はより好ましくはそれぞれ式(2)でx=1,y=1,z=0の基であり、式(I)の化合物及び式(II)の化合物はRにおいて異なる。 In the compound of the formula (I) and the compound of the formula (II), preferably, R and R ′ are each a group represented by the formula (2), R 2 and R 2 ′ are hydrogen, and the same aromatic ring Of the two R 1 and R 1 ′ present above, one is a hydroxyl group and the other is the same linear or branched alkoxy group having 1 to 4 carbon atoms. R and R ′ are more preferably groups of formula (2) and x = 1, y = 1 and z = 0, respectively, and the compound of formula (I) and the compound of formula (II) are different in R 3 .
 さらにこのとき、式(I)の化合物に含まれる複数のRは全て端部に極性構造を含有せず、かつ式(II)の化合物に含まれる複数のRのうち少なくとも2つは端部に極性構造を含有することが好ましい。より好ましくは、式(I)の化合物に含まれる複数のRは全て端部に極性構造を含有せず、かつ式(II)の化合物に含まれる複数のRは全て端部に極性構造を含有することが好ましい。ここで「端部に極性構造を含有する」ということは前述のとおりである。 Further, at this time, all of the plurality of R 3 contained in the compound of the formula (I) do not contain a polar structure at the end, and at least two of the plurality of R 3 contained in the compound of the formula (II) are terminal. The part preferably contains a polar structure. More preferably, the plurality of R 3 contained in the compound of the formula (I) do not contain any polar structure at the end, and the plurality of R 3 contained in the compound of the formula (II) all contain the polar structure at the end. It is preferable to contain. Here, “having a polar structure at the end” is as described above.
 本発明の組成物は好ましくは下記式(A)を満たし、より好ましくは下記式(B)、さらに好ましくは下記式(C)、最も好ましくは下記式(D)を満たす。
0.01≦t×100/(s+t)≦90・・・(A)
0.05≦t×100/(s+t)≦70・・・(B)
0.1≦t×100/(s+t)≦50・・・(C)
1≦t×100/(s+t)≦40・・・(D)
 sは組成物中の式(I)の化合物の合計重量であり、tは組成物中の式(II)の化合物の合計重量である。
The composition of the present invention preferably satisfies the following formula (A), more preferably the following formula (B), still more preferably the following formula (C), and most preferably the following formula (D).
0.01 ≦ t × 100 / (s + t) ≦ 90 (A)
0.05 ≦ t × 100 / (s + t) ≦ 70 (B)
0.1 ≦ t × 100 / (s + t) ≦ 50 (C)
1 ≦ t × 100 / (s + t) ≦ 40 (D)
s is the total weight of the compound of formula (I) in the composition, and t is the total weight of the compound of formula (II) in the composition.
 本発明の組成物における上記式(I)の化合物及び式(II)の化合物の合計の含有量は、溶剤を除く全組成物中で好ましくは50~99.9重量%であり、より好ましくは75~95重量%である。 The total content of the compound of the formula (I) and the compound of the formula (II) in the composition of the present invention is preferably 50 to 99.9% by weight in the total composition excluding the solvent, more preferably 75 to 95% by weight.
 本発明の組成物に使用される溶剤としては、例えば、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート等のエチレングリコールモノアルキルエーテルアセテート類;エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル等のエチレングリコールモノアルキルエーテル類;プロピレングリコールモノメチルエーテルアセテート(PGMEA)、プロピレングリコールモノエチルエーテルアセテート等のプロピレングリコールモノアルキルエーテルアセテート類;プロピレングリコールモノメチルエーテル(PGME)、プロピレングリコールモノエチルエーテル等のプロピレングリコールモノアルキルエーテル類;乳酸メチル、乳酸エチル(EL)等の乳酸エステル類;酢酸メチル、酢酸エチル、酢酸プロピル、酢酸ブチル、プロピオン酸エチル(PE)等の脂肪族カルボン酸エステル類;3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル等の他のエステル類;トルエン、キシレン等の芳香族炭化水素類;2-ヘプタノン、3-ヘプタノン、4-ヘプタノン、シクロヘキサノン等のケトン類;テトラヒドロフラン、ジオキサン等の環状エーテル類、γ-ブチロラクトン等のラクトン類等を挙げることができるが、特に限定はされない。これらの溶剤は、単独で又は2種以上を使用することができる。 Examples of the solvent used in the composition of the present invention include ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; ethylene such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether. Glycol monoalkyl ethers; propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monoethyl ether acetate; propylene glycol monoalkyls such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether Ethers; lactic acid such as methyl lactate and ethyl lactate (EL) Stealth; Aliphatic carboxylic acid esters such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl propionate (PE); methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate Other esters such as ethyl 3-ethoxypropionate; aromatic hydrocarbons such as toluene and xylene; ketones such as 2-heptanone, 3-heptanone, 4-heptanone and cyclohexanone; cyclic ethers such as tetrahydrofuran and dioxane And lactones such as γ-butyrolactone are not particularly limited. These solvents can be used alone or in combination of two or more.
 組成物中の溶剤以外の成分、即ちフォトレジスト固形分の量は所望のフォトレジスト層の膜厚を形成するために適する量とするのが好ましい。具体的には組成物の全重量の0.1~50重量%が一般的であるが、用いる基材や溶剤の種類、あるいは、所望のフォトレジスト層の膜厚等に合わせて規定できる。溶剤は全組成物中好ましくは50~99.9重量%配合する。 The components other than the solvent in the composition, that is, the amount of the photoresist solid content, is preferably set to an amount suitable for forming a desired thickness of the photoresist layer. Specifically, it is generally 0.1 to 50% by weight based on the total weight of the composition, but it can be defined according to the type of base material and solvent used or the desired film thickness of the photoresist layer. The solvent is preferably blended in an amount of 50 to 99.9% by weight in the total composition.
 本発明の組成物は、基材の分子が、EUV及び/又は電子線に対して活性なクロモフォアを含み単独でフォトレジストとしての能力を示す場合には特に添加剤は必要としないが、フォトレジストとしての性能(感度)を増強する必要がある場合は、必要に応じて、クロモフォアとして光酸発生剤(PAG)等を含むことが一般的である。 The composition of the present invention does not require an additive, particularly when the substrate molecule contains a chromophore active against EUV and / or electron beam and exhibits its ability as a photoresist alone. When it is necessary to enhance the performance (sensitivity), it is common to include a photoacid generator (PAG) or the like as the chromophore as necessary.
 光酸発生剤としては、特に限定されず、化学増幅型レジスト用の酸発生剤として提案されているものを使用することができる。
 このような酸発生剤としては、ヨードニウム塩やスルホニウム塩等のオニウム塩系酸発生剤、オキシムスルホネート系酸発生剤、ビスアルキル又はビスアリールスルホニルジアゾメタン類、ポリ(ビススルホニル)ジアゾメタン類等のジアゾメタン系酸発生剤、ニトロベンジルスルホネート系酸発生剤、イミノスルホネート系酸発生剤、ジスルホン系酸発生剤等多種のものが知られている。
The photoacid generator is not particularly limited, and those proposed as acid generators for chemically amplified resists can be used.
Examples of such acid generators include onium salt acid generators such as iodonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, and diazomethanes such as poly (bissulfonyl) diazomethanes. There are various known acid generators, nitrobenzyl sulfonate acid generators, imino sulfonate acid generators, disulfone acid generators, and the like.
 これらの光酸発生剤の中で、特に好ましくは活性光線又は放射線の作用により有機スルホン酸を発生する化合物が好ましい。 Among these photoacid generators, a compound that generates an organic sulfonic acid by the action of actinic rays or radiation is particularly preferable.
 PAGの配合量は、溶剤を除く全組成物中0~40重量%、好ましくは5~30重量%、さらに好ましくは5~25重量%である。 The blending amount of the PAG is 0 to 40% by weight, preferably 5 to 30% by weight, more preferably 5 to 25% by weight in the total composition excluding the solvent.
 本発明においては、放射線照射により酸発生剤から生じた酸のレジスト膜中における拡散を制御して、未露光領域での好ましくない化学反応を阻止する作用等を有する酸拡散制御剤(クエンチャー)を組成物に配合してもよい。この様な酸拡散制御剤を使用することにより、組成物の貯蔵安定性が向上する。また解像度が向上するとともに、電子線照射前の引き置き時間、電子線照射後の引き置き時間の変動によるレジストパターンの線幅変化を抑えることができ、プロセス安定性に極めて優れたものとなる。 In the present invention, an acid diffusion control agent (quencher) having an action of controlling an undesired chemical reaction in an unexposed region by controlling diffusion of an acid generated from an acid generator by irradiation in a resist film. May be added to the composition. By using such an acid diffusion controller, the storage stability of the composition is improved. Further, the resolution is improved, and a change in the line width of the resist pattern due to fluctuations in the holding time before electron beam irradiation and the holding time after electron beam irradiation can be suppressed, and the process stability is extremely excellent.
 このような酸拡散制御剤としては、例えば、n-ヘキシルアミン、n-ヘプチルアミン、n-オクチルアミン、n-ノニルアミン、n-デシルアミン等のモノアルキルアミン;ジエチルアミン、ジ-n-プロピルアミン、ジ-n-ヘプチルアミン、ジ-n-オクチルアミン、ジシクロヘキシルアミン等のジアルキルアミン;トリメチルアミン、トリエチルアミン、トリ-n-プロピルアミン、トリ-n-ブチルアミン、トリ-n-ヘキシルアミン、トリ-n-ペンチルアミン、トリ-n-ヘプチルアミン、トリ-n-オクチルアミン、トリ-n-ノニルアミン、トリ-n-デカニルアミン、トリ-n-ドデシルアミン等のトリアルキルアミン;ジエタノールアミン、トリエタノールアミン、ジイソプロパノールアミン、トリイソプロパノールアミン、ジ-n-オクタノールアミン、トリ-n-オクタノールアミン等のアルキルアルコールアミン;1,4-ジアザビシクロ[2.2.2]オクタン、1,5-ジアザビシクロ[4.3.0]-5-ノネン、1,8-ジアザビシクロ[5.4.0]-7-ウンデセン等の環状アミン等の窒素原子含有塩基性化合物、塩基性スルホニウム化合物、塩基性ヨードニウム化合物等の電子線放射分解性塩基性化合物が挙げられる。酸拡散制御剤は、単独で又は2種以上を使用することができる。 Examples of such acid diffusion control agents include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; diethylamine, di-n-propylamine, di- -Dialkylamines such as n-heptylamine, di-n-octylamine, dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine Trialkylamines such as tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decanylamine, tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, Isopropano Alkyl alcohol amines such as amine, di-n-octanolamine, tri-n-octanolamine; 1,4-diazabicyclo [2.2.2] octane, 1,5-diazabicyclo [4.3.0] -5 Electron beam-decomposable basic compounds such as nitrogen-containing basic compounds such as cyclic amines such as nonene and 1,8-diazabicyclo [5.4.0] -7-undecene, basic sulfonium compounds and basic iodonium compounds Is mentioned. The acid diffusion controller can be used alone or in combination of two or more.
 クエンチャーの配合量は、溶剤を除く全組成物中0~40重量%、好ましくは0.01~15重量%である。
 本発明においては、さらに所望により混和性のある添加剤、例えばレジスト膜の性能を改良するための付加的樹脂、塗布性を向上させるための界面活性剤、溶解制御剤、増感剤、可塑剤、安定剤、着色剤、ハレーション防止剤、染料、顔料等を適宜、添加含有させることができる。
The blending amount of the quencher is 0 to 40% by weight, preferably 0.01 to 15% by weight, based on the total composition excluding the solvent.
In the present invention, if desired, further miscible additives, for example, additional resins for improving the performance of resist films, surfactants for improving coating properties, dissolution control agents, sensitizers, plasticizers. Stabilizers, colorants, antihalation agents, dyes, pigments, and the like can be appropriately added and contained.
 レジストパターンを形成するには、まず、シリコンウェハー、ガリウムヒ素ウェハー、アルミニウムで被覆されたウェハー等の基板上に本発明のフォトレジスト組成物を、回転塗布、流延塗布、ロール塗布等の塗布手段によって塗布することによりレジスト膜を形成する。 In order to form a resist pattern, first, the photoresist composition of the present invention is applied onto a substrate such as a silicon wafer, a gallium arsenide wafer, or a wafer coated with aluminum, by spin coating, cast coating, roll coating, or other coating means. Then, a resist film is formed by coating.
 必要に応じて、基板上に表面処理剤を予め塗布してもよい。表面処理剤としては、例えばヘキサメチレンジシラザン等のシランカップリング剤(重合性基を有する加水分解重合性シランカップリング剤等)、アンカーコート剤又は下地剤(ポリビニルアセタール、アクリル系樹脂、酢酸ビニル系樹脂、エポキシ樹脂、ウレタン樹脂等)、これらの下地剤と無機微粒子とを混合したコーティング剤が挙げられる。 If necessary, a surface treatment agent may be applied on the substrate in advance. Examples of the surface treatment agent include a silane coupling agent such as hexamethylene disilazane (hydrolyzable polymerizable silane coupling agent having a polymerizable group), an anchor coating agent or a base agent (polyvinyl acetal, acrylic resin, vinyl acetate). Based resins, epoxy resins, urethane resins, etc.), and coating agents obtained by mixing these base agents and inorganic fine particles.
 必要に応じて、大気中に浮遊するアミン等が侵入するのを防ぐために、レジスト膜に保護膜を形成してもよい。保護膜を形成することにより、放射線によりレジスト膜中に発生した酸が、大気中に不純物として浮遊しているアミン等の酸と反応する化合物と反応して失活し、レジスト像が劣化し感度が低下することを防止できる。保護膜用の材料としては水溶性かつ酸性のポリマーが好ましい。例えば、ポリアクリル酸、ポリビニルスルホン酸等が挙げられる。 If necessary, a protective film may be formed on the resist film in order to prevent invasion of amines floating in the atmosphere. By forming a protective film, the acid generated in the resist film due to radiation reacts with a compound that reacts with an acid such as amine floating as an impurity in the atmosphere and deactivates, and the resist image deteriorates and sensitivity. Can be prevented from decreasing. As the material for the protective film, a water-soluble and acidic polymer is preferable. Examples thereof include polyacrylic acid and polyvinyl sulfonic acid.
 高精度の微細パターンを得るため、また露光中のアウトガスを低減するため、放射線照射前(露光前)に加熱するのが好ましい。その加熱温度は、組成物の配合組成等により変わるが、20~250℃が好ましく、より好ましくは40~150℃である。 In order to obtain a fine pattern with high accuracy and to reduce outgas during exposure, it is preferable to heat before irradiation (before exposure). The heating temperature varies depending on the composition of the composition, but is preferably 20 to 250 ° C, more preferably 40 to 150 ° C.
 次いで、KrFエキシマレーザー、極端紫外線、電子線又はX線等の放射線により、レジスト膜を所望のパターンに露光する。露光条件等は、フォトレジスト組成物の配合組成等に応じて適宜選定される。本発明においては、高精度の微細パターンを安定して形成するために、放射線照射後(露光後)に加熱するのが好ましい。露光後加熱温度(PEB)は、組成物の配合組成等により変わるが、20~250℃が好ましく、より好ましくは40~150℃である。 Next, the resist film is exposed to a desired pattern by radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray. The exposure conditions and the like are appropriately selected according to the composition of the photoresist composition. In the present invention, in order to stably form a high-precision fine pattern, it is preferable to heat after irradiation (after exposure). The post-exposure heating temperature (PEB) varies depending on the composition of the composition, but is preferably 20 to 250 ° C., more preferably 40 to 150 ° C.
 次いで、露光されたレジスト膜をアルカリ現像液で現像することにより、所定のレジストパターンを形成できる。前記アルカリ現像液としては、例えば、モノ-、ジ-あるいはトリアルキルアミン類、モノ-、ジ-あるいはトリアルカノールアミン類、複素環式アミン類、テトラメチルアンモニウムヒドロキシド(TMAH)、コリン等のアルカリ性化合物の1種以上を溶解した、好ましくは1~10重量%、より好ましくは1~5重量%のアルカリ性水溶液を使用する。アルカリ現像液には、メタノール、エタノール、イソプロピルアルコール等のアルコール類や前記界面活性剤を適量添加することもできる。これらのうちイソプロピルアルコールを10~30重量%添加することが特に好ましい。尚、このようなアルカリ性水溶液からなる現像液を用いた場合は、一般に、現像後水で洗浄する。 Then, a predetermined resist pattern can be formed by developing the exposed resist film with an alkaline developer. Examples of the alkaline developer include alkaline such as mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), and choline. An alkaline aqueous solution of preferably 1 to 10% by weight, more preferably 1 to 5% by weight, in which one or more compounds are dissolved, is used. An appropriate amount of an alcohol such as methanol, ethanol, isopropyl alcohol, or the above-mentioned surfactant can be added to the alkaline developer. Of these, it is particularly preferable to add 10 to 30% by weight of isopropyl alcohol. When a developer composed of such an alkaline aqueous solution is used, it is generally washed with water after development.
 酸解離性溶解抑止基を有する環状化合物をフォトレジスト基材として用いる場合は、KrFエキシマレーザー、極端紫外線、電子線又はX線等の放射線により、レジスト膜を所望のパターンに露光することにより、酸解離性溶解抑止基が脱離ないし構造が変化することにより、アルカリ現像液に溶解するようになる。一方、パターンの露光されていない部分はアルカリ現像液に溶解しないことが好ましい。すなわち、酸解離性溶解抑止基とは、KrFエキシマレーザー等の放射線により、レジスト膜内で光酸発生剤から発生した酸(プロトン)と反応することにより脱離ないし構造が変化し、アルカリ現像液への溶解に寄与する置換基になるという機能を有する置換基である。 When a cyclic compound having an acid dissociable, dissolution inhibiting group is used as a photoresist base material, the resist film is exposed to a desired pattern with radiation such as KrF excimer laser, extreme ultraviolet light, electron beam, or X-ray, thereby generating an acid. When the dissociable dissolution inhibiting group is eliminated or the structure is changed, the dissociable dissolution inhibiting group is dissolved in the alkaline developer. On the other hand, it is preferable that the unexposed portion of the pattern is not dissolved in the alkaline developer. That is, the acid dissociable, dissolution inhibiting group is an alkali developer that undergoes elimination or changes in structure by reacting with an acid (proton) generated from the photoacid generator within the resist film by radiation such as KrF excimer laser. It is a substituent having a function of becoming a substituent that contributes to dissolution in the aqueous solution.
 尚、場合によっては上記アルカリ現像後、ポストベーク処理を行ってもよいし、基板とのレジスト膜の間には有機系又は無機系の反射防止膜を設けてもよい。 In some cases, post-baking treatment may be performed after the alkali development, or an organic or inorganic antireflection film may be provided between the resist film and the substrate.
 レジストパターンを形成した後、エッチングすることによりパターン配線基板が得られる。エッチングは、プラズマガスを使用するドライエッチング、アルカリ溶液、塩化第二銅溶液、塩化第二鉄溶液等を用いるウェットエッチング等公知の方法で行うことができる。レジストパターンを形成した後、銅めっき、はんだめっき、ニッケルめっき、金めっき等のめっき処理を行うこともできる。 After forming the resist pattern, the pattern wiring board is obtained by etching. Etching can be performed by a known method such as dry etching using plasma gas, wet etching using an alkali solution, a cupric chloride solution, a ferric chloride solution, or the like. After the resist pattern is formed, a plating process such as copper plating, solder plating, nickel plating, or gold plating can be performed.
 エッチング後の残留レジストパターンは、有機溶剤やアルカリ現像液より強アルカリ性の水溶液で剥離することができる。上記有機溶剤としては、PGMEA、PGME、EL、アセトン、テトラヒドロフラン等が挙げられ、強アルカリ水溶液としては、例えば、1~20重量%の水酸化ナトリウム水溶液、及び1~20重量%の水酸化カリウム水溶液が挙げられる。剥離方法としては、例えば、浸漬方法、スプレイ方式等が挙げられる。またレジストパターンが形成された配線基板は、多層配線基板でもよく、小径スルーホールを有していてもよい。 The residual resist pattern after etching can be stripped with an aqueous solution stronger than an organic solvent or an alkali developer. Examples of the organic solvent include PGMEA, PGME, EL, acetone, tetrahydrofuran, and the like. Examples of the strong alkaline aqueous solution include 1 to 20% by weight sodium hydroxide aqueous solution and 1 to 20% by weight potassium hydroxide aqueous solution. Is mentioned. Examples of the peeling method include a dipping method and a spray method. Further, the wiring board on which the resist pattern is formed may be a multilayer wiring board or may have a small diameter through hole.
 本発明の組成物を用いてレジストパターンを形成した後、金属を真空蒸着し、その後レジストパターンを溶液で溶離する方法、即ちリフトオフ法により配線基板を形成することもできる。 It is also possible to form a wiring board by a method in which a resist pattern is formed using the composition of the present invention, a metal is vacuum-deposited, and then the resist pattern is eluted with a solution, that is, a lift-off method.
 本発明の組成物を用いて微細加工方法により、半導体装置を作製できる。この半導体装置は、テレビ受像機、携帯電話、コンピュータ等の電気製品(電子機器)、ディスプレイ、コンピュータ制御する自動車等の様々な装置に備えることができる。 A semiconductor device can be produced by a microfabrication method using the composition of the present invention. This semiconductor device can be provided in various devices such as an electric product (electronic device) such as a television receiver, a mobile phone, and a computer, a display, and a car controlled by a computer.
製造例1(環状化合物P-1)
Figure JPOXMLDOC01-appb-C000012
 窒素気流下、容量200ミリリットルの丸底フラスコに、3-メトキシフェノール50.0g(402.8ミリモル、東京化成)、4-ホルミル安息香酸60.5g(402.8ミリモル、東京化成)、及び脱水ジクロロメタン(関東化学)500ミリリットルを加えて氷水浴に浸漬させ、5℃以下に冷却した。この混合物に対して、三フッ化ホウ素ジエチルエーテル付加体60.8ミリリットル(483.6ミリモル、広島和光)を内温が15℃を越えないように滴下した後、室温まで昇温して8時間撹拌した。反応溶液を氷水浴で冷却し、ゆっくり水を滴下してクエンチし、析出した固体をろ別した。ろ別した析出物を中性になるまで水洗した後、N-メチル-2-ピロリドン(広島和光)に溶解させ、酢酸エチルで再沈し、析出した固体をろ別することにより、環状化合物(P-1)(94.4g、91%)を得た。
 尚、環状化合物(P-1)の構造はH-NMR測定により確認した。H-NMRの測定結果を図1に示す。
Production Example 1 (Cyclic Compound P-1)
Figure JPOXMLDOC01-appb-C000012
Under a nitrogen stream, in a 200 ml round bottom flask, 50.0 g of 3-methoxyphenol (402.8 mmol, Tokyo Kasei), 60.5 g of 4-formylbenzoic acid (402.8 mmol, Tokyo Kasei), and dehydration Dichloromethane (Kanto Chemical) (500 ml) was added and immersed in an ice-water bath and cooled to 5 ° C. or lower. To this mixture, 60.8 ml of boron trifluoride diethyl ether adduct (483.6 mmol, Hiroshima Wako) was added dropwise so that the internal temperature did not exceed 15 ° C., then the temperature was raised to room temperature and 8 hours. Stir. The reaction solution was cooled in an ice water bath, quenched slowly by dropwise addition of water, and the precipitated solid was filtered off. The precipitate separated by filtration was washed with water until neutral, then dissolved in N-methyl-2-pyrrolidone (Hiroshima Wako), reprecipitated with ethyl acetate, and the precipitated solid was separated by filtration to obtain a cyclic compound ( P-1) (94.4 g, 91%) was obtained.
The structure of the cyclic compound (P-1) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
製造例2(環状化合物P-2)
Figure JPOXMLDOC01-appb-C000013
 滴下ロートを取り付けた容量1リットルのフラスコに、レゾルシノール100g(0.91モル、広島和光)、ベンズアルデヒド96.4g(0.91ミリモル、広島和光)を仕込み窒素置換を行い、次いで、2-プロパノール490ミリリットルを投入してメカニカルスターラーで撹拌し、均一溶液を得た。
Production Example 2 (Cyclic Compound P-2)
Figure JPOXMLDOC01-appb-C000013
A 1-liter flask equipped with a dropping funnel was charged with resorcinol 100 g (0.91 mol, Hiroshima Wako) and benzaldehyde 96.4 g (0.91 mmol, Hiroshima Wako), followed by nitrogen substitution, and then 2-propanol 490 Milliliter was added and stirred with a mechanical stirrer to obtain a uniform solution.
 次に、フラスコを氷浴中で5℃まで冷やした後、撹拌しながら濃塩酸の2-プロパノール溶液(濃塩酸/2-プロパノール=40ミリリットル/40ミリリットル)を、内温が15℃を超えないように滴下ロートを介してゆっくりと滴下した。滴下終了後、反応器を氷浴から外し、室温で40分撹拌した後、65℃に加熱したオイルバス中で2時間加熱撹拌した。反応後、室温まで冷却した。 Next, after the flask was cooled to 5 ° C. in an ice bath, a 2-propanol solution of concentrated hydrochloric acid (concentrated hydrochloric acid / 2-propanol = 40 ml / 40 ml) was stirred and the internal temperature did not exceed 15 ° C. The solution was slowly dropped through a dropping funnel. After completion of the dropping, the reactor was removed from the ice bath, stirred at room temperature for 40 minutes, and then heated and stirred in an oil bath heated to 65 ° C. for 2 hours. After the reaction, it was cooled to room temperature.
 反応液にイオン交換水を950ミリリットル加えて加えて30分撹拌した後、粗生成物固体をろ別した。ろ液が中性になるまで固体をイオン交換水で洗浄し、80℃で8時間真空乾燥した後、粗生成物固体を得た(144.9g、収率81%)。 950 ml of ion-exchanged water was added to the reaction solution and stirred for 30 minutes, and then the crude product solid was filtered off. The solid was washed with ion-exchanged water until the filtrate became neutral and dried in vacuo at 80 ° C. for 8 hours to obtain a crude product solid (144.9 g, yield 81%).
 この粗生成物固体(144.9g)とN,N-ジメチルホルムアミド(2.0リットル)の混合物を65℃に加熱し均一溶液とし、12時間静置放冷却し、析出した固体をろ別した。氷浴で冷却したN,N-ジメチルホルムアミド(30ミリリットル)で析出した固体を洗浄した後、水洗した。洗浄した析出固体をろ別して、80℃にて8時間真空乾燥し、再結晶物を回収した。得られた化合物は、H-NMR(図2)により、環状化合物(P-2)であることを確認した(76.3g、再結晶回収率として53%、仕込み基準収率42%)。 A mixture of this crude product solid (144.9 g) and N, N-dimethylformamide (2.0 liters) was heated to 65 ° C. to make a homogeneous solution, allowed to stand still for 12 hours, and the precipitated solid was filtered off. . The precipitated solid was washed with N, N-dimethylformamide (30 ml) cooled in an ice bath and then washed with water. The washed precipitated solid was collected by filtration and vacuum dried at 80 ° C. for 8 hours to recover a recrystallized product. The obtained compound was confirmed to be a cyclic compound (P-2) by 1 H-NMR (FIG. 2) (76.3 g, 53% as a recrystallization recovery rate, 42% yield based on charge).
製造例3(環状化合物A-1)
Figure JPOXMLDOC01-appb-C000014
 200ミリリットルの2口フラスコに、製造例1で調製した環状化合物(P―1)(1.00g、1.00ミリモル)を加えて窒素雰囲気下とした後、無水N-メチル-2-ピロリドン(40ミリリットル、広島和光)をさらに加え室温で攪拌し、トリエチルアミン(0.7ミリリットル、5.00ミリモル、アルドリッチ)、無水N-メチル-2-ピロリドン(1ミリリットル)で希釈したブロモ酢酸エチルアダマンチル(1.50g、5.00ミリモル)、及び1,8-ジアザビシクロ[5,4,0]-7-ウンデセン(0.22ミリリットル,1.50ミリモル、広島和光)を滴下した。室温で10時間攪拌した後、イオン交換水30ミリリットル及び酢酸エチル30ミリリットルを加えて有機層を抽出した。得られた有機層を濃縮して得た溶液に、イオン交換水と少量の塩を加えた後、沈殿物をろ別して環状化合物(A-1)を得た(収率93%)。
Production Example 3 (Cyclic Compound A-1)
Figure JPOXMLDOC01-appb-C000014
To a 200 ml two-necked flask, the cyclic compound (P-1) (1.00 g, 1.00 mmol) prepared in Production Example 1 was added to form a nitrogen atmosphere, and then anhydrous N-methyl-2-pyrrolidone ( 40 ml, Hiroshima Wako) was further added and stirred at room temperature. Ethyl adamantyl bromoacetate (1 ml) diluted with triethylamine (0.7 ml, 5.00 mmol, Aldrich) and anhydrous N-methyl-2-pyrrolidone (1 ml) (1 .50 g, 5.00 mmol), and 1,8-diazabicyclo [5,4,0] -7-undecene (0.22 ml, 1.50 mmol, Hiroshima Wako) were added dropwise. After stirring for 10 hours at room temperature, 30 mL of ion exchange water and 30 mL of ethyl acetate were added to extract the organic layer. Ion exchange water and a small amount of salt were added to the solution obtained by concentrating the obtained organic layer, and then the precipitate was filtered off to obtain a cyclic compound (A-1) (yield 93%).
 尚、環状化合物(1)の構造は液体クロマトグラフィー測定及びH-NMR測定により確認した。H-NMRの測定結果を図3に示す。目的物は保護基の数が4つであり、液体クロマトグラフィーでは、目的物の純度は93%であった(波長280nm測定時の面積%)。 The structure of the cyclic compound (1) was confirmed by liquid chromatography measurement and 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG. The target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
製造例4(環状化合物A-2)
Figure JPOXMLDOC01-appb-C000015
 200ミリリットルの2口フラスコに、製造例1で調製した環状化合物(P-1)(1.00g、1.00ミリモル)を加えて窒素雰囲気下とした後、無水N-メチル-2-ピロリドン(40ミリリットル)をさらに加え室温で攪拌し、トリエチルアミン(0.7ミリリットル、5.00ミリモル)、無水N-メチル-2-ピロリドン(1ミリリットル)で希釈したブロモ酢酸メチルアダマンチル(1.43g、5.00ミリモル)、及び1,8-ジアザビシクロ[5,4,0]-7-ウンデセン(0.22ミリリットル,1.50ミリモル)を滴下した。室温で10時間攪拌した後、イオン交換水30ミリリットル及び酢酸エチル30ミリリットルを加えて有機層を抽出した。得られた有機層を濃縮して得た溶液に、イオン交換水と少量の塩を加えた後、沈殿物をろ別して環状化合物(A-2)を得た(収率94%)。
Production Example 4 (Cyclic Compound A-2)
Figure JPOXMLDOC01-appb-C000015
To a 200 ml two-necked flask, the cyclic compound (P-1) (1.00 g, 1.00 mmol) prepared in Production Example 1 was added to form a nitrogen atmosphere, and then anhydrous N-methyl-2-pyrrolidone ( 40 ml) and stirred at room temperature, methyl adamantyl bromoacetate (1.43 g, 5.50 ml) diluted with triethylamine (0.7 ml, 5.00 mmol) and anhydrous N-methyl-2-pyrrolidone (1 ml). 00 mmol) and 1,8-diazabicyclo [5,4,0] -7-undecene (0.22 ml, 1.50 mmol) were added dropwise. After stirring for 10 hours at room temperature, 30 mL of ion exchange water and 30 mL of ethyl acetate were added to extract the organic layer. Ion exchange water and a small amount of salt were added to the solution obtained by concentrating the obtained organic layer, and then the precipitate was filtered off to obtain a cyclic compound (A-2) (yield 94%).
 尚、環状化合物(A-2)の構造は液体クロマトグラフィー測定及びH-NMR測定により確認した。H-NMRの測定結果を図4に示す。目的物は保護基の数が4つであり、液体クロマトグラフィーでは、目的物の純度は93%であった(波長280nm測定時の面積%)。 The structure of the cyclic compound (A-2) was confirmed by liquid chromatography measurement and 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG. The target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
製造例5(環状化合物A-3)
Figure JPOXMLDOC01-appb-C000016
 十分乾燥し窒素ガスにて置換した三口フラスコ(容量1リットル)に、製造例1で調製した環状化合物(P-1)(10.0g、10ミリモル)及びジメチルホルムアミド(344ミリリットル)を封入し、40℃まで加熱することで溶解させた。室温まで放冷した後0℃まで冷却し、トリエチルアミン(10.4g、103ミリモル)を加え10分攪拌し、アダマンチルオキシメチレンクロリド(10.9g、54ミリモル)を加えた。室温まで昇温し21時間攪拌した後、飽和塩化アンモニウム溶液を加えることで反応を停止させた。続いて、酢酸エチルにて反応溶液を抽出し、純水及び飽和食塩水にて洗浄した。得られた溶液を濃縮し、酢酸エチル及びヘキサンの混合溶媒にて再沈殿させ、環状化合物(A-3)を得た(10.5g、収率62%)。
Production Example 5 (Cyclic Compound A-3)
Figure JPOXMLDOC01-appb-C000016
In a three-necked flask (capacity: 1 liter) sufficiently dried and substituted with nitrogen gas, the cyclic compound (P-1) (10.0 g, 10 mmol) prepared in Production Example 1 and dimethylformamide (344 ml) were sealed. It was dissolved by heating to 40 ° C. The mixture was allowed to cool to room temperature, cooled to 0 ° C., triethylamine (10.4 g, 103 mmol) was added and stirred for 10 minutes, and adamantyloxymethylene chloride (10.9 g, 54 mmol) was added. After warming to room temperature and stirring for 21 hours, the reaction was stopped by adding a saturated ammonium chloride solution. Subsequently, the reaction solution was extracted with ethyl acetate and washed with pure water and saturated brine. The obtained solution was concentrated and reprecipitated with a mixed solvent of ethyl acetate and hexane to obtain a cyclic compound (A-3) (10.5 g, yield 62%).
 尚、環状化合物(A-3)の構造は液体クロマトグラフィー測定及びH-NMR測定により確認した。H-NMRの測定結果を図5に示す。目的物は保護基の数が4つであり、液体クロマトグラフィーでは、目的物の純度は94%であった(波長280nm測定時の面積%)。 The structure of the cyclic compound (A-3) was confirmed by liquid chromatography measurement and 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG. The target product had four protecting groups, and the purity of the target product was 94% in liquid chromatography (area% when measuring wavelength 280 nm).
製造例6(環状化合物A-4)
Figure JPOXMLDOC01-appb-C000017
 ブロモ酢酸エチルアダマンチルの代わりに、ブロモ酢酸6-メトキシインデニルを使用した以外は、製造例3と同様の操作を行い、環状化合物(A-4)を得た(収率:81%)。
Production Example 6 (Cyclic Compound A-4)
Figure JPOXMLDOC01-appb-C000017
A cyclic compound (A-4) was obtained in the same manner as in Production Example 3 except that 6-methoxyindenyl bromoacetate was used instead of ethyl adamantyl bromoacetate (yield: 81%).
 環状化合物(A-4)の構造はH-NMRにより確認した。結果を以下に示す。
H-NMR(内部標準テトラメチルシラン:溶媒重DMSO:ppm):1.925-2.033(4H,m),2.433-2.494(4H,m),2.680-2.733(4H,m),2.830-2.905(4H,m),3.464-3.3.586(12H,m),3.632(12H,d)、4.845(8H,s),5.204(2H,t),5.640(4H,s),6.126(4H,s),6.216(2H,t),6.326(2H,s),6.510(2H,s),6.658-6.724(8H,m),7.849(8H,s),7.156(4H,s),7.478-7.569(8H,m),9.032(2H,s),9.185(2H,s)
 目的物は保護基の数が4つであり、液体クロマトグラフィーでは、目的物の純度は93%であった(波長280nm測定時の面積%)。
The structure of the cyclic compound (A-4) was confirmed by 1 H-NMR. The results are shown below.
1 H-NMR (internal standard tetramethylsilane: solvent weight DMSO: ppm): 1.925-2.033 (4H, m), 2.433-2.494 (4H, m), 2.680-2. 733 (4H, m), 2.830-2.905 (4H, m), 3.464-3.3.586 (12H, m), 3.632 (12H, d), 4.845 (8H, s), 5.204 (2H, t), 5.640 (4H, s), 6.126 (4H, s), 6.216 (2H, t), 6.326 (2H, s), 6. 510 (2H, s), 6.658-6.724 (8H, m), 7.849 (8H, s), 7.156 (4H, s), 7.478-7.569 (8H, m) , 9.032 (2H, s), 9.185 (2H, s)
The target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% when measuring wavelength 280 nm).
製造例7(環状化合物A-5)
Figure JPOXMLDOC01-appb-C000018
 ブロモ酢酸エチルアダマンチルの代わりに、ブロモ酢酸5-アセトキシインデニルを使用した以外は、製造例3と同様の操作を行い、環状化合物(A-5)を得た(収率:85%)。
Production Example 7 (Cyclic Compound A-5)
Figure JPOXMLDOC01-appb-C000018
A cyclic compound (A-5) was obtained in the same manner as in Production Example 3 except that 5-acetoxyindenyl bromoacetate was used instead of ethyl adamantyl bromoacetate (yield: 85%).
 目的物は保護基の数が4つであり、液体クロマトグラフィーでは、目的物の純度は93%であった(波長280nm測定時の面積%)
H-NMR(内部標準テトラメチルシラン:溶媒(重DMSO:ppm):1.976-2.106(4H,m),2.268(12H,s),2.434-2.520(4H,m),2.800-2.838(4H,m),2.934-2.992(4H,m),3.479-3.620(12H,m),4.853(8H,s),5.231(2H,t),5.658(4H,s),6.175(4H,s),6.237(2H,t),6.341(2H,s),6.528(2H,s),6.680-6.744(8H,m),6.944(4H,d),7.041(4H,s),7.369(4H,d),7.497-7.593(8H,m),9.019(2H,s)
The target product had four protecting groups, and the purity of the target product was 93% in liquid chromatography (area% at wavelength 280 nm measurement).
1 H-NMR (internal standard tetramethylsilane: solvent (heavy DMSO: ppm): 1.976-2.106 (4H, m), 2.268 (12H, s), 2.434-2.520 (4H M), 2.800-2.838 (4H, m), 2.934-2.992 (4H, m), 3.479-3.620 (12H, m), 4.853 (8H, s) ), 5.231 (2H, t), 5.658 (4H, s), 6.175 (4H, s), 6.237 (2H, t), 6.341 (2H, s), 6.528 (2H, s), 6.680-6.744 (8H, m), 6.944 (4H, d), 7.041 (4H, s), 7.369 (4H, d), 7.497- 7.593 (8H, m), 9.019 (2H, s)
製造例8(環状化合物A-6)
Figure JPOXMLDOC01-appb-C000019
 容量100ミリリットルのフラスコに、原料合成2において製造した式(P-2)の環状化合物(2.0g、2.5ミリモル)、NMP(23ミリリットル)、炭酸ナトリウム(3.0g、28.2ミリモル)を封入し窒素置換した。
 次いで、ブロモ酢酸メチルアダマンチル(6.6g、23.2ミリモル)を加えて、窒素雰囲気下、65℃のオイルバス中において、攪拌しながら24時間加熱した。反応液を放冷し、ろ過により得られたろ液に酢酸エチルを加えて均一溶液とし、分液ロート中にて0.5M酢酸水溶液で洗浄した。さらに酢酸エチル溶液をイオン交換水にて水層が中性になるまで洗浄し、酢酸エチル溶液を無水硫酸マグネシウムで処理し水分を除去した。ろ過した後に、ろ液をロータリーエバポレーターにて減圧下で濃縮し、濃縮液をヘキサンに投入して固体を得た。固体を濾別し、真空下50℃で8時間乾燥させ、環状化合物(A-6)で表される環状化合物を得た。
Production Example 8 (Cyclic Compound A-6)
Figure JPOXMLDOC01-appb-C000019
In a 100 ml flask, a cyclic compound of formula (P-2) (2.0 g, 2.5 mmol), NMP (23 ml), sodium carbonate (3.0 g, 28.2 mmol) prepared in the raw material synthesis 2 was added. ) Was enclosed and replaced with nitrogen.
Next, methyl adamantyl bromoacetate (6.6 g, 23.2 mmol) was added, and the mixture was heated for 24 hours with stirring in an oil bath at 65 ° C. under a nitrogen atmosphere. The reaction solution was allowed to cool, and ethyl acetate was added to the filtrate obtained by filtration to obtain a homogeneous solution, which was then washed with a 0.5 M acetic acid aqueous solution in a separatory funnel. Further, the ethyl acetate solution was washed with ion exchange water until the aqueous layer became neutral, and the ethyl acetate solution was treated with anhydrous magnesium sulfate to remove moisture. After filtration, the filtrate was concentrated with a rotary evaporator under reduced pressure, and the concentrate was poured into hexane to obtain a solid. The solid was filtered off and dried under vacuum at 50 ° C. for 8 hours to obtain a cyclic compound represented by the cyclic compound (A-6).
 H-NMR(図6)にて構造を確認するとともに、LC/MSにて含まれる置換数異性体を同定し、LCにて酸解離性溶解抑止基の平均導入率を算出した(平均導入率64%、1.5g)。液体クロマトグラフィーでは、目的物の純度は93%であった(波長280nm測定時の面積%)。 The structure was confirmed by 1 H-NMR (FIG. 6), the substitution isomer contained in LC / MS was identified, and the average introduction rate of acid dissociable, dissolution inhibiting groups was calculated by LC (average introduction) Rate 64%, 1.5 g). In liquid chromatography, the purity of the target product was 93% (area% when measuring wavelength 280 nm).
製造例9(環状化合物A-7)
Figure JPOXMLDOC01-appb-C000020
 製造例5において、アダマンチルオキシメチレンクロリドの代わりに、5-オキソアダマンチルオキシメチレンクロリドを使用した以外は同様に合成を行った(収率85.2%)。目的物は保護基の数が4つであり、H-NMR(図7)にて構造を確認するとともに、液体クロマトグラフィーでは、目的物の純度は94%であった(波長280nm測定時の面積%)。
Production Example 9 (Cyclic Compound A-7)
Figure JPOXMLDOC01-appb-C000020
Synthesis was performed in the same manner as in Production Example 5 except that 5-oxoadamantyloxymethylene chloride was used instead of adamantyloxymethylene chloride (yield 85.2%). The target product had four protecting groups, the structure was confirmed by 1 H-NMR (FIG. 7), and the purity of the target product was 94% by liquid chromatography (at the wavelength of 280 nm measurement). area%).
製造例10(環状化合物P-3)
Figure JPOXMLDOC01-appb-C000021
 製造例1において、3-メトキシフェノール50.0g(402.8ミリモル)、4-ホルミル安息香酸60.5g(402.8ミリモル)の代わりに、3-エトキシフェノール10g(72.38mmol)、4-ホルミル安息香酸10.86g(72.38mmol)を使用した以外は、同様の操作を行ない、環状化合物(P-3)を得た(収量18.0g、収率92%)。環状化合物(P-3)の構造はH-NMR測定により確認した。H-NMRの測定結果を図8に示す。
Production Example 10 (Cyclic Compound P-3)
Figure JPOXMLDOC01-appb-C000021
In Production Example 1, instead of 50.0 g (402.8 mmol) of 3-methoxyphenol and 60.5 g (402.8 mmol) of 4-formylbenzoic acid, 10 g (72.38 mmol) of 3-ethoxyphenol, 4- A cyclic compound (P-3) was obtained in the same manner as described above except that 10.86 g (72.38 mmol) of formylbenzoic acid was used (yield 18.0 g, yield 92%). The structure of the cyclic compound (P-3) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
製造例11(環状化合物A-8)
Figure JPOXMLDOC01-appb-C000022
 製造例3において、環状化合物(P-1)の代わりに、環状化合物(P-3)10g(9.250mmol)を用いた以外は、同様な操作を行い、環状化合物(A-8)を得た(収量18g、収率99%)。環状化合物(A-8)の構造はH-NMR測定により確認した。H-NMRの測定結果を図9に示す。
Production Example 11 (Cyclic Compound A-8)
Figure JPOXMLDOC01-appb-C000022
The same operation as in Production Example 3 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-8). (Yield 18 g, yield 99%). The structure of the cyclic compound (A-8) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
製造例12(環状化合物A-9)
Figure JPOXMLDOC01-appb-C000023
 製造例4において、環状化合物(P-1)の代わりに、環状化合物(P-3)10g(9.250mmol)を用いた以外は、同様の操作を行い、環状化合物(A-9)を得た(収量16g、収率90.7%)。環状化合物(A-9)の構造はH-NMR測定により確認した。H-NMRの測定結果を図10に示す。
Production Example 12 (Cyclic Compound A-9)
Figure JPOXMLDOC01-appb-C000023
The same operation as in Production Example 4 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-9). (Yield 16 g, yield 90.7%). The structure of the cyclic compound (A-9) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
製造例13(環状化合物A-10)
Figure JPOXMLDOC01-appb-C000024
 製造例5において、環状化合物(P-1)の代わりに、環状化合物(P-3)10g(9.250mmol)を用いた以外は、同様の操作を行い、環状化合物(A-10)を得た(収量16g、収率99%)。環状化合物(A-10)の構造はH-NMR測定により確認した。H-NMRの測定結果を図11に示す。
Production Example 13 (Cyclic Compound A-10)
Figure JPOXMLDOC01-appb-C000024
The same operation as in Production Example 5 was carried out except that 10 g (9.250 mmol) of the cyclic compound (P-3) was used instead of the cyclic compound (P-1) to obtain the cyclic compound (A-10). (Yield 16 g, yield 99%). The structure of the cyclic compound (A-10) was confirmed by 1 H-NMR measurement. The measurement result of 1 H-NMR is shown in FIG.
製造例14(環状化合物A-11)
Figure JPOXMLDOC01-appb-C000025
 製造例5において、アダマンチルオキシメチレンクロリドの代わりに、ノルボニルラクトンオキシメチレンクロリド(10.9g、54mmol)を使用した以外は、同様の操作を行い、環状化合物(A-11)を得た(収量15.8g、収率88.1%)。目的物は保護基の数が4つであり、H-NMRにて構造を確認した。H-NMRの測定結果を図12に示す。
Production Example 14 (Cyclic Compound A-11)
Figure JPOXMLDOC01-appb-C000025
A cyclic compound (A-11) was obtained in the same manner as in Production Example 5 except that norbornyllactone oxymethylene chloride (10.9 g, 54 mmol) was used instead of adamantyloxymethylene chloride (yield). 15.8 g, yield 88.1%). The target product had four protecting groups, and the structure was confirmed by 1 H-NMR. The measurement result of 1 H-NMR is shown in FIG.
製造例15(環状化合物A-12)
Figure JPOXMLDOC01-appb-C000026
 製造例5において、アダマンチルオキシメチレンクロリドの代わりに、2-クロロメトキシ―4-オキサ-5-ホモアダマンタン-5-オン(12.4g、54mmol)を使用した以外は、同様の操作を行い、環状化合物(A-12)を得た(収率85.2%)。目的物は保護基の数が4つであり、H-NMRにて構造を確認した。H-NMRの測定結果を図13に示す。
Production Example 15 (Cyclic Compound A-12)
Figure JPOXMLDOC01-appb-C000026
The same procedure as in Production Example 5 was performed, except that 2-chloromethoxy-4-oxa-5-homoadamantan-5-one (12.4 g, 54 mmol) was used instead of adamantyloxymethylene chloride. Compound (A-12) was obtained (yield: 85.2%). The target product had four protecting groups, and the structure was confirmed by 1 H-NMR. The measurement result of 1 H-NMR is shown in FIG.
実施例1
 上記の化合物を表1に示す組成と配合量で混合、溶解してフォトレジスト組成物を調製した。表1において、化合物(I)及び(II)は上段に化合物の種類、下段にその配合量(重量部)を示す。
Example 1
The above compounds were mixed and dissolved in the compositions and blending amounts shown in Table 1 to prepare a photoresist composition. In Table 1, compounds (I) and (II) indicate the type of compound in the upper part and the blending amount (parts by weight) in the lower part.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 PAGとしてトリフェニルスルホニウムノナフルオロブタンスルホネート(ALDRICH社製)、クエンチャーとして1、4-ジアザビシクロ[2.2.2]オクタン(純正化学株式会社製)、溶媒としてプロピレングリコールモノメチルエーテル(広島和光株式会社製)とプロピレングリコールモノメチルエーテルアセテート(京葉ケミー株式会社製)1:1の混合液をそれぞれ表1の重量比で使用した。 Triphenylsulfonium nonafluorobutanesulfonate (manufactured by ALDRICH) as PAG, 1,4-diazabicyclo [2.2.2] octane (manufactured by Junsei Chemical Co., Ltd.) as quencher, propylene glycol monomethyl ether (Hiroshima Wako Co., Ltd.) as solvent 1) and propylene glycol monomethyl ether acetate (manufactured by Keiyo Chemie Co., Ltd.) 1: 1 were used in a weight ratio shown in Table 1, respectively.
評価例1(解像度・感度)
 全実施例及び比較例のフォトレジスト溶液を、それぞれ、ヘキサメチルジシラザン(東京応化製OAP)処理を施したシリコンウェハ上にスピンコートし、130℃で90秒加熱することにより薄膜を形成した。
 次いで、この薄膜を有する基板に対して電子線描画装置(加速電圧50kV)を用いて描画し、100℃で60秒ベークした後、濃度が2.38重量%のテトラブチルアンモニウムヒドロキシド水溶液(東京応化製NMD-3)で60秒間現像処理し、純水にて60秒洗浄、その後、窒素気流により乾燥した。
 走査型電子顕微鏡による観察結果から得られた、サイズが1/1のライン/スペースパターンを作製した際の解像度(ハーフピッチ)と感度(必要な電子線ドーズ量)の結果を表2に記す。
Evaluation Example 1 (Resolution / Sensitivity)
The photoresist solutions of all Examples and Comparative Examples were each spin-coated on a silicon wafer subjected to hexamethyldisilazane treatment (OAP manufactured by Tokyo Ohka Kogyo Co., Ltd.) and heated at 130 ° C. for 90 seconds to form a thin film.
Next, the substrate having this thin film was drawn using an electron beam drawing apparatus (acceleration voltage 50 kV), baked at 100 ° C. for 60 seconds, and then a 2.38 wt% tetrabutylammonium hydroxide aqueous solution (Tokyo, Japan). The film was developed with NMD-3) manufactured by Okaka Co., Ltd. for 60 seconds, washed with pure water for 60 seconds, and then dried with a nitrogen stream.
Table 2 shows the results of resolution (half pitch) and sensitivity (necessary electron beam dose) when a line / space pattern having a size of 1/1 was obtained from the observation results obtained with a scanning electron microscope.
Figure JPOXMLDOC01-appb-T000002
 本発明の組成物を用いた実施例では比較例に比べ、高感度であり微細解像性も優れている。
Figure JPOXMLDOC01-appb-T000002
Examples using the composition of the present invention have higher sensitivity and fine resolution than the comparative examples.
実施例2
 実施例1と同様に、上記の化合物を表3に示す組成と配合量で混合、溶解してフォトレジスト組成物を調製した。表3において、化合物(I)及び(II)は上段に化合物の種類、下段にその配合量(重量部)を示す。
Example 2
In the same manner as in Example 1, the above compounds were mixed and dissolved in the compositions and blending amounts shown in Table 3 to prepare a photoresist composition. In Table 3, compounds (I) and (II) indicate the type of compound in the upper part and the blending amount (parts by weight) in the lower part.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
評価例2(解像度・感度)
 評価例1において、フォトレジスト溶液をシリコンウェハ上にスピンコートした後の加熱温度を110℃とした以外は、同様に評価した。結果を表4に示す。
Figure JPOXMLDOC01-appb-T000004
Evaluation example 2 (resolution / sensitivity)
Evaluation was performed in the same manner as in Evaluation Example 1 except that the heating temperature after spin coating the photoresist solution on the silicon wafer was 110 ° C. The results are shown in Table 4.
Figure JPOXMLDOC01-appb-T000004
評価例3(ラインエッジラフネス)
 評価例1,2で得られた、実施例2、実施例15、比較例2のフォトレジスト溶液を用いて描画したラインの写真を20に示す。LER(LERは、評価例1、2の方法で製作した30nmライン&スペースのパターンを、日立ハイテクノロジー社製走査型電子顕微鏡(SEM:scanning electron microscope)S-4800を用いて観察し、SEM写真として得た画像データを、EUV Tecnology社製の画像解析ソフトであるSuMMITを用いてラインパタンの横手方向1.5μmを10本取り10nm間隔でレジストパターンのエッジのゆらぎ(ラフネス)を計測、この数値から3σ(σは標準偏差)を計算することにより求める。)は値が小さいほどレジストパターンのラインが直線に近いことを示す。実施例15のように、一番外側にある置換基が非極性の化合物(I)と、一番外側にある置換基が極性の化合物(II)とを組み合わせて用いた組成物は、ラインが直線に近くラインエッジラフネスが低減していることが分かる。
Evaluation Example 3 (Line Edge Roughness)
A photograph of a line drawn using the photoresist solutions of Examples 2, 15 and Comparative Example 2 obtained in Evaluation Examples 1 and 2 is shown in FIG. LER (LER is a 30 nm line & space pattern manufactured by the method of Evaluation Examples 1 and 2 using a scanning electron microscope (SEM) S-4800 manufactured by Hitachi High-Technology Corporation, SEM photograph. As for image data obtained as above, the fluctuation of the edge of the resist pattern (roughness) is measured at 10 nm intervals by taking 10 lines of 1.5 μm in the lateral direction of the line pattern using SuMMIT, an image analysis software made by EUV Technology. 3σ (where σ is a standard deviation) is calculated from (1), the smaller the value, the closer the resist pattern line is to a straight line. As in Example 15, the composition in which the outermost substituent group is nonpolar (I) and the outermost substituent group (II) is used in combination has a line of It can be seen that the line edge roughness is reduced near the straight line.
 上記のほか、実施例1のLERは7.9、実施例2のLERは7.8、実施例11のLERは5.5、実施例12のLERは5.3、実施例14のLERは6.2、実施例16のLERは5.9、実施例17のLERは5.9、実施例18のLERは5.4、実施例19のLERは5.0となった。 In addition to the above, the LER of Example 1 is 7.9, the LER of Example 2 is 7.8, the LER of Example 11 is 5.5, the LER of Example 12 is 5.3, and the LER of Example 14 is 6.2, LER of Example 16 was 5.9, LER of Example 17 was 5.9, LER of Example 18 was 5.4, and LER of Example 19 was 5.0.
 本発明の組成物は、半導体装置等の電気・電子分野や光学分野等において使用できる。 The composition of the present invention can be used in the electric / electronic field and the optical field such as semiconductor devices.
 上記に本発明の実施形態及び/又は実施例を幾つか詳細に説明したが、当業者は、本発明の新規な教示及び効果から実質的に離れることなく、これら例示である実施形態及び/又は実施例に多くの変更を加えることが容易である。従って、これらの多くの変更は本発明の範囲に含まれる。
 この明細書に記載の文献の内容を全てここに援用する。
Although several embodiments and / or examples of the present invention have been described in detail above, those skilled in the art will appreciate that these exemplary embodiments and / or embodiments are substantially without departing from the novel teachings and advantages of the present invention. It is easy to make many changes to the embodiment. Accordingly, many of these modifications are within the scope of the present invention.
The entire contents of the documents described in this specification are incorporated herein by reference.

Claims (13)

  1.  式(I)の化合物及び式(II)の化合物を含む組成物。
    Figure JPOXMLDOC01-appb-C000027
    [式中、R及びR’はそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~12の芳香族基、これら基のうち2種以上を組み合わせた基、又は下記式(1)~(3)で表される基のいずれかである。
     R及びR1’はそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、置換もしくは無置換の炭素数6~10のアリーロキシル基、アルコキシアルキロキシ基、シロキシ基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレンオキシ基、置換もしくは無置換のアリーレンオキシ基、置換もしくは無置換のシリレンオキシ基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)とを組み合わせた基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、置換もしくは無置換の炭素数6~10の芳香族基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、酸解離性溶解抑止基、又は下記式(1)~(3)で表される基のいずれかである。
     R及びR2’はそれぞれRで表される基である。
     R及びR’、R及びR1’、並びにR及びR2’のうち少なくとも1つが互いに異なる。
    Figure JPOXMLDOC01-appb-C000028
    (式中、Arは、置換もしくは無置換の炭素数6~10のアリーレン基、置換もしくは無置換の炭素数6~10のアリーレン基を2つ以上組み合わせた基、又はアルキレン基及びエーテル結合から選択される1つ以上を置換もしくは無置換の炭素数6~10のアリーレン基と組み合わせた基であり、置換基を有する場合の置換基は、臭素、フッ素、ニトリル基又は炭素数1~10のアルキル基である。
     Rはそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族基、置換もしくは無置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、又は酸解離性溶解抑止基である。
     R、Rはそれぞれ水素、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数6~12の芳香族基、又はこれら基のうち2種以上を組み合わせた基である。
     Aはアルキレン基、エーテル結合及びアルキレン基から選択される2つ以上を組み合わせた基、又はアルキレン基1つ以上とエーテル結合1つ以上を組み合わせた基である。xは1~5、yは0~3、zは0~4の整数を表す。
     複数のR、R、R、R、R、R1’、R2’、R3’、Ar、Aは、それぞれ同じであっても異なっていてもよい。)]
    A composition comprising a compound of formula (I) and a compound of formula (II).
    Figure JPOXMLDOC01-appb-C000027
    [Wherein, R and R ′ are each hydrogen, a substituted or unsubstituted straight-chain aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms. Groups, substituted or unsubstituted cyclic aliphatic hydrocarbon groups having 3 to 20 carbon atoms, substituted or unsubstituted lactone rings having 4 to 20 carbon atoms, substituted or unsubstituted aromatic groups having 6 to 12 carbon atoms, and the like It is either a group in which two or more of the groups are combined, or a group represented by the following formulas (1) to (3).
    R 1 and R 1 ′ are each hydrogen, hydroxyl group, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy group having 3 to 12 carbon atoms, substituted or unsubstituted A cyclic alkoxy group having 3 to 20 carbon atoms, a substituted or unsubstituted aryloxyl group having 6 to 10 carbon atoms, an alkoxyalkyloxy group, a siloxy group, and these groups and a divalent group (where a divalent group is A substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or unsubstituted silyleneoxy group, an ester bond group, a carbonate ester bond group, an ether bond group, or a combination of two or more of these groups A substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted carbon number of 3 An aliphatic hydrocarbon group having 12 branches, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, a substituted or unsubstituted carbon number 6 to 10 aromatic groups, alkoxyalkyl groups, carboxy groups, silyl groups, and these groups and divalent groups (wherein the divalent groups are substituted or unsubstituted alkylene groups, substituted or unsubstituted arylenes) A group, a substituted or unsubstituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), an acid dissociable, dissolution inhibiting group, Or any one of groups represented by the following formulas (1) to (3).
    R 2 and R 2 ′ are each a group represented by R 1 .
    R and R ', R 1 and R 1', and at least one of R 2 and R 2 'are different from each other.
    Figure JPOXMLDOC01-appb-C000028
    (In the formula, Ar is selected from a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, a group in which two or more substituted or unsubstituted arylene groups having 6 to 10 carbon atoms are combined, or an alkylene group and an ether bond) Or a substituted or unsubstituted arylene group having 6 to 10 carbon atoms, and in the case of having a substituent, the substituent is bromine, fluorine, nitrile group or alkyl having 1 to 10 carbon atoms It is a group.
    R 3 represents hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted, Unsubstituted cycloaliphatic group having 3 to 20 carbon atoms, substituted or unsubstituted aromatic group having 6 to 10 carbon atoms, substituted or unsubstituted linear alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted An alkoxy group having 3 to 12 carbon atoms, a substituted or unsubstituted cyclic alkoxy group having 3 to 20 carbon atoms, an alkoxyalkyl group, a carboxy group, a silyl group, and these groups and a divalent group (where, The divalent group is a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted silylene group, an ester bond group, a carbonate bond group, an ether bond group, or A group formed by bonding two or more of these groups) or an acid dissociable, dissolution inhibiting group.
    R 4 and R 5 are each hydrogen, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, a substituted Alternatively, it is an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 12 carbon atoms, or a group obtained by combining two or more of these groups.
    A 1 is a group combining two or more selected from an alkylene group, an ether bond and an alkylene group, or a group combining one or more alkylene groups and one or more ether bonds. x represents an integer of 1 to 5, y is 0 to 3, and z is an integer of 0 to 4.
    A plurality of R 1 , R 2 , R 3 , R 4 , R 5 , R 1 ′ , R 2 ′ , R 3 ′ , Ar, and A 1 may be the same or different. ]]
  2.  前記Rが式(1)~(3)で表される基のいずれかであるか、又は前記Rがそれぞれ水素、水酸基、置換もしくは無置換の炭素数1~20の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~12の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数6~10の芳香族基、置換もしくは無置換の炭素数1~20の直鎖状アルコキシ基、置換もしくは無置換の炭素数3~12の分岐を有するアルコキシ基、置換もしくは無置換の炭素数3~20の環状アルコキシ基、アルコキシアルキル基、カルボキシ基、シリル基、これらの基と2価の基(ここで、2価の基は、置換もしくは無置換のアルキレン基、置換もしくは無置換のアリーレン基、置換もしくは無置換のシリレン基、エステル結合基、炭酸エステル結合基、エーテル結合基、又はこれらの基が2以上結合してなる基である)が結合した基、もしくは酸解離性溶解抑止基であり、複数のRの1以上が酸解離性溶解抑止基である請求項1に記載の組成物。 R is any one of the groups represented by formulas (1) to (3), or R 1 is hydrogen, a hydroxyl group, a substituted or unsubstituted linear aliphatic carbon atom having 1 to 20 carbon atoms, respectively. Hydrogen group, substituted or unsubstituted aliphatic hydrocarbon group having 3 to 12 carbon atoms, substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, substituted or unsubstituted 6 to 6 carbon atoms 10 aromatic groups, substituted or unsubstituted linear alkoxy groups having 1 to 20 carbon atoms, substituted or unsubstituted alkoxy groups having 3 to 12 carbon atoms, substituted or unsubstituted 3 to 20 carbon atoms A cyclic alkoxy group, an alkoxyalkyl group, a carboxy group, a silyl group, and a divalent group thereof (wherein the divalent group is a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted group) Or nothing A substituted silylene group, an ester bond group, a carbonate ester bond group, an ether bond group, or a group formed by bonding two or more of these groups), or an acid dissociable, dissolution inhibiting group, The composition according to claim 1 , wherein one or more of R 1 is an acid dissociable, dissolution inhibiting group.
  3.  前記Rが上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのRのうち、一方は水酸基であり、他方がOR''で表される基であり、R''は水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基、又は酸素を含む基である請求項1に記載の組成物。 R is any of the groups represented by the above formulas (1) to (3), and one of two R 1 existing on the same aromatic ring is a hydroxyl group, and the other is OR ″. R ″ is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or a group having 3 to 20 carbon atoms. 2. The composition according to claim 1, which is a cyclic aliphatic hydrocarbon group, an aromatic group having 6 to 10 carbon atoms, or a group containing oxygen.
  4.  前記R’が上記式(1)~(3)で表される基のいずれかであり、かつ同一の芳香環上に存在する2つのR1’のうち、一方は水酸基であり、他方がOR''で表される基であり、R''は水素、炭素数1~20の直鎖状脂肪族炭化水素基、炭素数3~12の分岐を有する脂肪族炭化水素基、炭素数3~20の環状脂肪族炭化水素基、炭素数6~10の芳香族基又は酸素を含む基である請求項3に記載の組成物。 R ′ is any one of the groups represented by the above formulas (1) to (3), and one of two R 1 ′ existing on the same aromatic ring is a hydroxyl group and the other is OR R '' is hydrogen, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic hydrocarbon group having a branch having 3 to 12 carbon atoms, or 3 to 3 carbon atoms. The composition according to claim 3, which is a group containing 20 cycloaliphatic hydrocarbon groups, an aromatic group having 6 to 10 carbon atoms, or oxygen.
  5.  下記式(A)を満たす請求項1~4のいずれかに記載の組成物。
     0.01≦t×100/(s+t)≦90・・・(A)
    (sは組成物中の式(I)の化合物の合計重量であり、tは組成物中の式(II)の化合物の合計重量である。)
    The composition according to any one of claims 1 to 4, which satisfies the following formula (A):
    0.01 ≦ t × 100 / (s + t) ≦ 90 (A)
    (S is the total weight of the compound of formula (I) in the composition, and t is the total weight of the compound of formula (II) in the composition.)
  6.  前記Rが、下記式(I)~(IV)で表されるいずれかである請求項1~5のいずれかに記載の組成物。
    Figure JPOXMLDOC01-appb-C000029
    (上記式(I)~(IV)において、
     αは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、又は置換もしくは無置換の炭素数6~10の芳香族基である。
     βは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が酸素と結合してなる基、又は三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基及び置換もしくは無置換の複環状脂肪族基から選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
     γは、三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基又は置換もしくは無置換の複環状脂肪族基が、酸素と結合してなる基、又は三級脂肪族基、置換もしくは無置換の芳香族基、置換もしくは無置換の単環状脂肪族基及び置換もしくは無置換の複環状脂肪族基から選択される基と炭素数1~10の直鎖状脂肪族炭化水素基を組み合わせた基が、酸素と結合してなる基である。
     δは、置換もしくは無置換の炭素数1~10の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数3~10の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数3~20の環状脂肪族炭化水素基、置換もしくは無置換の炭素数4~20のラクトン環、又は置換もしくは無置換の炭素数6~10の芳香族基である。)
    The composition according to any one of claims 1 to 5, wherein R 3 is any one of the following formulas (I) to (IV):
    Figure JPOXMLDOC01-appb-C000029
    (In the above formulas (I) to (IV),
    α is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms.
    β is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group, a group formed by bonding a substituted or unsubstituted bicyclic aliphatic group to oxygen, or A linear group having 1 to 10 carbon atoms and a group selected from a quaternary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group A group formed by combining an aliphatic hydrocarbon group is a group formed by bonding with oxygen.
    γ is a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group or a substituted or unsubstituted bicyclic aliphatic group bonded to oxygen, or A straight chain having 1 to 10 carbon atoms and a group selected from a tertiary aliphatic group, a substituted or unsubstituted aromatic group, a substituted or unsubstituted monocyclic aliphatic group and a substituted or unsubstituted bicyclic aliphatic group A group formed by combining a group of aliphatic hydrocarbon groups is a group formed by bonding with oxygen.
    δ is a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted carbon number, A cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted lactone ring having 4 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 10 carbon atoms. )
  7.  前記Rが、下記式(6)~(42)から選択される基である請求項1~5のいずれかに記載の組成物。
    Figure JPOXMLDOC01-appb-C000030
    Figure JPOXMLDOC01-appb-I000005
    Figure JPOXMLDOC01-appb-I000006
    (式中、rはそれぞれ上記式(6)~(34),(38)~(42)で表される置換基のうちのいずれかを表す。)
    The composition according to any one of claims 1 to 5, wherein R 3 is a group selected from the following formulas (6) to (42).
    Figure JPOXMLDOC01-appb-C000030
    Figure JPOXMLDOC01-appb-I000005
    Figure JPOXMLDOC01-appb-I000006
    (Wherein, r represents any one of the substituents represented by the above formulas (6) to (34) and (38) to (42)).
  8.  前記式(I)の化合物及び式(II)の化合物がそれぞれ複数のRを含み、前記式(I)の化合物に含まれるRは全て端部に極性構造を含有せず、かつ前記式(II)の化合物に含まれるRのうち少なくとも2つは端部に極性構造を含有する請求項1~7のいずれかに記載の組成物。 The compound of the formula (I) and the compound of the formula (II) each contain a plurality of R 3 s , all R 3 contained in the compound of the formula (I) do not contain a polar structure at the end, and the formula The composition according to any one of claims 1 to 7, wherein at least two of R 3 contained in the compound of (II) contain a polar structure at the end.
  9.  前記式(II)の化合物に含まれる複数のRの少なくとも2つの端部が、炭素数3~20のラクトン環、又は炭素数3~20の炭素環ケトンである請求項8記載の組成物。 9. The composition according to claim 8, wherein at least two ends of R 3 contained in the compound of the formula (II) are a lactone ring having 3 to 20 carbon atoms or a carbocyclic ketone having 3 to 20 carbon atoms. .
  10.  前記式(I)に含まれるRは、それぞれ下記式(8)~(11)、(16)、(17)及び(20)~(25)から選択される基であり、
     前記式(II)に含まれるRは、それぞれ下記式(18)、(19)、(26)~(29)、(43)及び(44)から選択される基である請求項9記載の組成物。
    Figure JPOXMLDOC01-appb-C000031
    Figure JPOXMLDOC01-appb-I000007
    R 3 contained in the formula (I) is a group selected from the following formulas (8) to (11), (16), (17) and (20) to (25),
    The R 3 contained in the formula (II) is a group selected from the following formulas (18), (19), (26) to (29), (43) and (44), respectively. Composition.
    Figure JPOXMLDOC01-appb-C000031
    Figure JPOXMLDOC01-appb-I000007
  11.  請求項1~10のいずれかに記載の組成物を用いた微細加工方法。 A fine processing method using the composition according to any one of claims 1 to 10.
  12.  請求項11に記載の微細加工方法により作製した半導体装置。 A semiconductor device manufactured by the microfabrication method according to claim 11.
  13.  請求項12に記載の半導体装置を備えた装置。 An apparatus comprising the semiconductor device according to claim 12.
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