WO2012030126A3 - Structure de batterie solaire en silicium cristallin et procédé de fabrication de cette dernière - Google Patents

Structure de batterie solaire en silicium cristallin et procédé de fabrication de cette dernière Download PDF

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Publication number
WO2012030126A3
WO2012030126A3 PCT/KR2011/006374 KR2011006374W WO2012030126A3 WO 2012030126 A3 WO2012030126 A3 WO 2012030126A3 KR 2011006374 W KR2011006374 W KR 2011006374W WO 2012030126 A3 WO2012030126 A3 WO 2012030126A3
Authority
WO
WIPO (PCT)
Prior art keywords
rear surface
emitter
base
conductive
solar battery
Prior art date
Application number
PCT/KR2011/006374
Other languages
English (en)
Korean (ko)
Other versions
WO2012030126A2 (fr
Inventor
김대원
Original Assignee
Kim Daewon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kim Daewon filed Critical Kim Daewon
Publication of WO2012030126A2 publication Critical patent/WO2012030126A2/fr
Publication of WO2012030126A3 publication Critical patent/WO2012030126A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

La présente invention se rapporte à une batterie solaire en silicium cristallin à jonction arrière, dans laquelle les fonctions de collecte de courant d'une électrode émettrice et d'une électrode de base sont réparties entre une cellule et une feuille de support présentant un motif de circuit imprimé, ce qui permet de réduire de façon significative les coûts de fabrication. A cette fin, en détail, une base dopée avec de premières impuretés conductrices et un émetteur dopé avec de secondes impuretés conductrices sont formés sur une surface arrière parmi deux surfaces d'une première tranche de silicium conductrice, ladite surface arrière étant opposée à une surface d'incidence de lumière de ladite première tranche de silicium conductrice. Une électrode de base, qui collecte des premières charges électroconductrices, est formée à proximité de la base qui est formée sur la surface arrière, et une électrode émettrice, qui collecte des secondes charge électroconductrices, est formée à proximité de l'émetteur formé sur la surface arrière. L'aire sur la surface arrière occupée par l'électrode émettrice est plus importante que la moitié de l'aire totale de la surface arrière.
PCT/KR2011/006374 2010-09-05 2011-08-29 Structure de batterie solaire en silicium cristallin et procédé de fabrication de cette dernière WO2012030126A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100086764A KR101153591B1 (ko) 2010-09-05 2010-09-05 결정질 실리콘 태양전지의 구조 및 제조방법
KR10-2010-0086764 2010-09-05

Publications (2)

Publication Number Publication Date
WO2012030126A2 WO2012030126A2 (fr) 2012-03-08
WO2012030126A3 true WO2012030126A3 (fr) 2012-05-31

Family

ID=45773368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006374 WO2012030126A2 (fr) 2010-09-05 2011-08-29 Structure de batterie solaire en silicium cristallin et procédé de fabrication de cette dernière

Country Status (2)

Country Link
KR (1) KR101153591B1 (fr)
WO (1) WO2012030126A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019163751A1 (fr) * 2018-02-23 2019-08-29 株式会社カネカ Cellule solaire et dispositif électronique muni de ladite cellule solaire
CN111742418B (zh) * 2018-02-23 2023-08-29 株式会社钟化 太阳能电池以及具备该太阳能电池的电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135350B1 (en) * 2003-10-03 2006-11-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
KR20070004671A (ko) * 2004-02-05 2007-01-09 어드벤트 솔라 인코포레이티드 에미터 랩 쓰루 백 컨택 실리콘 태양전지의 컨택 제작
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
KR20110020659A (ko) * 2009-08-24 2011-03-03 주식회사 효성 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7135350B1 (en) * 2003-10-03 2006-11-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
KR20070004671A (ko) * 2004-02-05 2007-01-09 어드벤트 솔라 인코포레이티드 에미터 랩 쓰루 백 컨택 실리콘 태양전지의 컨택 제작
KR20110020659A (ko) * 2009-08-24 2011-03-03 주식회사 효성 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
KR101153591B1 (ko) 2012-06-11
WO2012030126A2 (fr) 2012-03-08
KR20120024090A (ko) 2012-03-14

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