WO2012030126A3 - Crystalline-silicon solar battery structure, and method for manufacturing same - Google Patents

Crystalline-silicon solar battery structure, and method for manufacturing same Download PDF

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Publication number
WO2012030126A3
WO2012030126A3 PCT/KR2011/006374 KR2011006374W WO2012030126A3 WO 2012030126 A3 WO2012030126 A3 WO 2012030126A3 KR 2011006374 W KR2011006374 W KR 2011006374W WO 2012030126 A3 WO2012030126 A3 WO 2012030126A3
Authority
WO
WIPO (PCT)
Prior art keywords
rear surface
emitter
base
conductive
solar battery
Prior art date
Application number
PCT/KR2011/006374
Other languages
French (fr)
Korean (ko)
Other versions
WO2012030126A2 (en
Inventor
김대원
Original Assignee
Kim Daewon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kim Daewon filed Critical Kim Daewon
Publication of WO2012030126A2 publication Critical patent/WO2012030126A2/en
Publication of WO2012030126A3 publication Critical patent/WO2012030126A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

The present invention relates to a back-junction crystalline-silicon solar battery in which the current-collecting functions of an emitter electrode and a base electrode are distributed to a cell and a back sheet having a printed circuit pattern, to thereby significantly reduce manufacturing costs. For this purpose, in detail, a base doped with first conductive impurities and an emitter doped with second conductive impurities are formed at a rear surface from among two surfaces of a first conductive silicon wafer, wherein said rear surface is opposite a light incidence surface of said first conductive silicon wafer. A base electrode, which collects first electrically conductive charges, is formed in the region of the base that is formed at the rear surface, and an emitter electrode, which collects second electrically conductive charges, is formed in the region of the emitter formed at the rear surface. The area in the rear surface occupied by the emitter electrode is larger than half of the total area of the rear surface.
PCT/KR2011/006374 2010-09-05 2011-08-29 Crystalline-silicon solar battery structure, and method for manufacturing same WO2012030126A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100086764A KR101153591B1 (en) 2010-09-05 2010-09-05 Structures and manufacturing processes of crystallStructures and manufacturing processes of crystalline silicon solar cells and modules ine silicon solar cells and modules
KR10-2010-0086764 2010-09-05

Publications (2)

Publication Number Publication Date
WO2012030126A2 WO2012030126A2 (en) 2012-03-08
WO2012030126A3 true WO2012030126A3 (en) 2012-05-31

Family

ID=45773368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006374 WO2012030126A2 (en) 2010-09-05 2011-08-29 Crystalline-silicon solar battery structure, and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR101153591B1 (en)
WO (1) WO2012030126A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019163751A1 (en) * 2018-02-23 2019-08-29 株式会社カネカ Solar cell and electronic device provided with said solar cell
JP7270597B2 (en) * 2018-02-23 2023-05-10 株式会社カネカ Solar cell and electronic device equipped with the solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135350B1 (en) * 2003-10-03 2006-11-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
KR20070004671A (en) * 2004-02-05 2007-01-09 어드벤트 솔라 인코포레이티드 Contact fabrication of emitter wrap-through back contact silicon solar cells
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
KR20110020659A (en) * 2009-08-24 2011-03-03 주식회사 효성 Back junction solar cell having improved rear structure and method for manufacturing therof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7135350B1 (en) * 2003-10-03 2006-11-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
KR20070004671A (en) * 2004-02-05 2007-01-09 어드벤트 솔라 인코포레이티드 Contact fabrication of emitter wrap-through back contact silicon solar cells
KR20110020659A (en) * 2009-08-24 2011-03-03 주식회사 효성 Back junction solar cell having improved rear structure and method for manufacturing therof

Also Published As

Publication number Publication date
WO2012030126A2 (en) 2012-03-08
KR20120024090A (en) 2012-03-14
KR101153591B1 (en) 2012-06-11

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