WO2012025249A1 - Procédé et dispositif de commande pour nettoyer un dispositif de traitement par plasma et/ou un substrat placé dans un dispositif de traitement par plasma - Google Patents

Procédé et dispositif de commande pour nettoyer un dispositif de traitement par plasma et/ou un substrat placé dans un dispositif de traitement par plasma Download PDF

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Publication number
WO2012025249A1
WO2012025249A1 PCT/EP2011/004311 EP2011004311W WO2012025249A1 WO 2012025249 A1 WO2012025249 A1 WO 2012025249A1 EP 2011004311 W EP2011004311 W EP 2011004311W WO 2012025249 A1 WO2012025249 A1 WO 2012025249A1
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WO
WIPO (PCT)
Prior art keywords
plasma
units
substrate
wave
unit
Prior art date
Application number
PCT/EP2011/004311
Other languages
German (de)
English (en)
Inventor
Jürgen NIESS
Wilhelm Beckmann
Original Assignee
Hq-Dielectrics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102010035593.3A external-priority patent/DE102010035593B4/de
Priority claimed from DE202010015818U external-priority patent/DE202010015818U1/de
Application filed by Hq-Dielectrics Gmbh filed Critical Hq-Dielectrics Gmbh
Publication of WO2012025249A1 publication Critical patent/WO2012025249A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the present invention relates to a method for cleaning a plasma treatment apparatus and / or a substrate accommodated in a plasma treatment apparatus and a control apparatus for carrying out this method.
  • plasma treatment devices for the treatment of the substrates plasma treatment devices are provided, in which plasma units are provided, which serve to generate the plasma. Since in the field of substrate processing, in particular in the field of semiconductor technology, even small impurities on the substrate or impurities in the layers grown on the substrate lead to unusability of the respective product, it is essential to keep both the plasma treatment apparatus and the substrate itself as particle-free as possible ,
  • the substrate is usually accommodated in a plasma chamber, in which the actual plasma treatment, ie, for example, plasma etching or plasma-assisted deposition of a film, takes place.
  • a plasma chamber in which the actual plasma treatment, ie, for example, plasma etching or plasma-assisted deposition of a film.
  • Such a device for treating substrates by means of a plasma is known, for example, from DE 10 2008 036 766 A1. 2 HQD-28423
  • rinsing methods are known, by means of which process gas or another gas, for example an inert gas, is passed through the respective process chamber and the substrate to remove impurities from the process chamber or rinse off from the substrate.
  • process gas or another gas for example an inert gas
  • Impurities on the substrate may occur, for example, due to mechanical damage during handling of the substrate (in pre-process steps or during the treatment), thermal expansion of the substrate, or rotation of the substrate in the process chamber. Particles may adhere to the process chamber wall or to the substrate due to coulomb electrical forces, which may be generated in particular by frictional forces between the particles and convection-bearing ambient gases. These forces can occur, for example, due to thermophoretic and / or photophoretic effects, convection or radiation pressure. Furthermore, particles can be transported and deposited on the chamber wall of the process chamber or on the substrate by gravity, diffusion or by a plasma wave which is generated during the switching on and off of the plasma for the treatment of the respective substrate. Accordingly, unwanted particles can sediment on the chamber wall or the substrate.
  • the plasma processing apparatus comprises at least two plasma units, wherein according to the present invention, at least two plasma units are sequentially ignited to generate a plasma wave progressing through the plasma processing apparatus.
  • the plasma wave or pressure wave, respectively
  • the plasma field neutralizes the coulombic charges through which the particles adhere to the substrate surface or chamber walls of the process chamber.
  • the resulting by the application of the plasma wave pressure fluctuations within the process chamber further solve weakly bound particles from the chamber wall or the substrate. Accordingly, according to the method according to the invention, particles which were not accessible to a simple gas purging process can be removed from the process chamber or from the substrate surface in this way, since they are detached from the respective surfaces.
  • the resulting forces remove the particles from the chamber interior surface as well as from the substrate surface.
  • removal of the particles from the interior surfaces of the chamber can also be achieved by already pure pulsing (simultaneous ignition of the plasma units) of the plasma (pressure wave).
  • At least three plasma units are provided in the plasma processing apparatus, which are ignited sequentially such that a directional plasma wave propagates through the plasma processing apparatus.
  • this plasma wave travels in the plasma processing apparatus from one side of the process chamber to the 4 HQD-28423 other side, for example from left to right or from right to left or from top to bottom or vice versa.
  • the entire plasma processing apparatus can be traversed by means of the plasma wave at least in the area relevant to the substrate processing such that the particles which have been released by the plasma wave are driven in one direction.
  • they can preferably be collected, for example by suction.
  • the plasma wave covers the substrate and / or the chamber walls and in a process chamber without a substrate, only the chamber walls.
  • At least three plasma units are provided in the plasma treatment apparatus and are ignited in such a way that two plasma waves simultaneously run in opposite directions.
  • the plasma waves preferably run symmetrically and particularly preferably outwards from the center of the plasma treatment device, in order to transport dissolved particles away from the surface relevant for the substrate treatment.
  • the particles can be removed by suction at the edges.
  • the plasma units may be repetitively sequentially ignited so that plasma waves repeatedly successively pass through the plasma processing apparatus, particularly 2 to 10,000 plasma waves in succession.
  • a more effective cleaning is performed such that the particles adhered to the respective surfaces are better dissolved and better transported.
  • the plasma devices with different powers are ignited in such a way that plasma waves of different intensity pass through the plasma treatment device.
  • the successive plasma waves can also be ignited with the same power of the plasma units, ie with the same intensity.
  • HQD-28423 of different intensities has the advantage that differently bound particles can be correspondingly detached from the surfaces.
  • a pressure change of the interior pressure in the plasma processing apparatus is applied simultaneously with the generation of the plasma wave. This pressure change can be achieved, for example, by pumping or rinsing the process chamber by means of an inert purge gas or by means of process gas. Such a pressure change may be performed, for example, from 100 mTorr to 1 Torr or more.
  • the particles dissolved by the plasma wave can be further detached from the surfaces by means of the gas flow resulting from the pressure change and then removed, preferably into a suction device.
  • the purge gas is preferably introduced at the starting point of the plasma wave and the suction takes place in the direction of movement of the shaft, that is, for example, in an edge region of the process chamber.
  • an ignition power is preferably introduced into at least one first plasma unit (master) in order thereby to generate a plasma in a first plasma region. Then a power is fed into at least one second plasma unit (slave), wherein the power is substantially smaller than the ignition power of the second plasma unit.
  • the first plasma region overlaps with a radiation region of the second plasma unit, so that the plasma in the plasma region of the second plasma unit can be ignited by means of the already ignited plasma in the first plasma region. In this way, a plasma wave progressing through the plasma treatment apparatus can be produced in a simple manner and rapidly and successively switchable, in particular if the plasma regions of all adjacent plasma units overlap one another.
  • the invention further advantageously relates to a control device for carrying out the method described above, wherein the control device can individually control at least two plasma units in a plasma treatment device in order to be able to generate a plasma wave progressing through the plasma treatment device.
  • the device is provided in particular together with a process chamber in a plasma treatment device and at least two plasma units. Furthermore, the control device is advantageously connected to means for applying a pressure change in a process chamber of a plasma treatment apparatus.
  • a plasma processing apparatus includes a control device for individually controlling the plasma devices such that at least two plasma units are arranged adjacent to each other so that their radiation area overlaps and the controller sequentially controls the plasma units to generate a plasma wave advancing through the plasma processing apparatus ,
  • Figure 1 is a schematic sectional view through a plasma treatment apparatus
  • FIG. 2 shows a schematic cross-sectional view of the plasma treatment device according to FIG. 1 with a cutting plane rotated by 90 degrees;
  • Figure 3a is a schematic bottom view of an arrangement of
  • Plasma units that can be used in the arrangement according to Figures 1 and 2;
  • Figure 3b is a schematic view from below of an alternative
  • Figure 4 is a schematic view from below of an alternative
  • FIG. 5 is a schematic plan view of different arrangement examples for plasma units, which could be used in the apparatus according to Figures 1 and 2;
  • Figure 6 is a schematic representation of a control device for
  • Figures 1 and 2 show each rotated by 90 degrees cross-sectional views through a plasma treatment apparatus 1 for the treatment of sheet-like substrates 2.
  • the substrates 2 may be in particular semiconductor substrates whose surface is etched by means of a plasma or on the surface of which a layer growth is performed.
  • the plasma treatment device essentially consists of a housing 3, which defines a process chamber 4 in the interior, a substrate receiving unit 7, an optional heating arrangement 8 and a plasma arrangement 9. 8 HQD-28423
  • the housing 3 may be of any suitable type defining a process chamber 4 in the interior in which predetermined process conditions regarding gas composition and gas pressures can be set via desired inlets and outlets, not shown in the figures.
  • a loading-unloading opening 12 is provided, which can be closed and opened via a movable door element 13.
  • the housing 3 has in opposite side walls a plurality of through holes 14 for receiving cladding tubes 16, which in turn serve to accommodate heating units or plasma units, as will be explained in more detail below.
  • the holes 14 are each formed in pairs in opposite side walls such that a cladding tube 14 may extend through the process chamber 4 through, perpendicular to the holes 14 having side walls.
  • a total of ten pairs of bores 14 are formed in the opposite side walls of the housing 3. Thereby, nine of these pairs are in one line, while another pair are down, i. is offset towards the center of the process chamber. Also in these holes cladding tubes 16 are added.
  • a cover element 18 is provided on the inside, ie within the process chamber 4, in order to protect the housing inner wall against a plasma generated by the plasma arrangement 9.
  • a separating element between the plasma assembly 9 and the substrate 2 may be arranged. Further covering or separating elements may be located in the interior of the process chamber 4.
  • the substrate holding assembly consists essentially of a vertically extending support shaft 20, a horizontally extending support plate 21, and support members 22.
  • the support shaft 20 extends through the bottom of the housing 3 and may be connected to a drive motor outside the housing 3, for example Rotate support shaft about its longitudinal axis and / or move in the vertical direction.
  • corresponding sealing mechanisms such as a bellows mechanism may be provided in the region of the passage.
  • the support shaft 20 may be constructed, for example, of a material substantially transparent to electromagnetic radiation of the heating arrangement 8, such as quartz. Alternatively, however, the support shaft 20 could also have a highly reflective surface.
  • the support shaft 20 carries at its upper end the support plate 21, which is vertically adjustable on the support shaft both in the vertical direction, and about a longitudinal axis of the support shaft 20 is rotatable.
  • the support plate 21 is preferably constructed of a material substantially transparent to the electromagnetic radiation of the heating arrangement 8.
  • the support elements 22 are shown as conical tapered cone, on the top of the substrate 2 rests. The support elements 22 keep the substrate 2 at a certain distance spaced from the support plate 21st
  • the substrate-holding arrangement could also have a different structure.
  • the support plate could be constructed as a so-called susceptor, which has a projection surface corresponding to the substrate 2, and absorbs the electromagnetic radiation of the heating assembly 8 to be heated itself and above the substrate 2 to heat. 10 HQD-28423
  • the heating arrangement 8 consists essentially of eight heating lamps 24, which are arranged in the eight sheaths 16 in the lower region of the process chamber 4.
  • the heating lamps 24 are designed as flashlights which extend substantially completely through the process chamber 4.
  • the heating lamps 24 may be of any type suitable for heating the substrate 2 by electromagnetic radiation, such as tungsten-halogen lamps.
  • the cladding tubes 16 may be traversed by a cooling medium, such as air, to cool the cladding tubes 16 and the heating lamps 24 during operation.
  • a cooling medium such as air
  • another heating arrangement may be used, such as a resistance heating arrangement, for example integrated in the support plate.
  • heating arrangement 8 is conceivable in which, for example, an arrangement of heating lamps 24 is separated via a quartz plate with respect to a process space for the substrate 2, as is known in the art.
  • the plasma arrangement 9 consists essentially of a first rod-shaped plasma unit 27 and a multiplicity of second rod-shaped plasma units 28.
  • the first and second plasma units 27, 28 are respectively accommodated in corresponding cladding tubes 6, for example made of quartz, which are located in the upper region of the Process chamber 4 extend therethrough. While the second plasma units 28 are received in the in-line sheath tubes 16, the plasma unit 27 is located in the slightly downwardly shrouded tube 16 (see right outer sheath 16 in Figure 2).
  • the plasma units 27 and 28 can each have essentially the same basic structure as described, for example, in DE 10 2008 036 766 A1.
  • the plasma units each have an outer conductor 30 and an inner conductor 31.
  • the outer conductor 30 has, as can be seen in the view from below according to the figures 3a and 3b, a portion in T / EP2011 / 004311
  • the plasma units 27 and 28 are each of the type which is energized from one side (right, see FIG. 1).
  • a resonator 32 (see Figure 3) is further provided to promote ignition of a plasma in the region of the first plasma unit.
  • Such a resonator may also be mounted on the second plasma units 28.
  • the plasma units can be accommodated in one or the other side or alternatively in the cladding tubes, as can be seen from FIGS. 3a and 3b.
  • the first plasma unit 27 is shown smaller than the second plasma units 28. This is intended to indicate that the first plasma unit 27 can have a lower power, in particular a lower ignition power than Alternatively, however, it is also possible to form the first plasma unit 27 in the same manner as the second plasma units 28.
  • a separate embodiment in the manner described above is advantageous when the first plasma unit 27 is designated as the ignition unit is used, as will be explained in more detail below.
  • a respective plasma region of the respective plasma units 27 and 28 is indicated in the form of a dashed line surrounding the respective plasma unit. This is intended to indicate a customary expansion range of a plasma which is generated by a corresponding plasma unit 27, 28.
  • the plasma units 27 and 28 can be controlled individually and / or in groups. In particular, they can be controlled individually and / or in groups with regard to the power fed in and the time control. This applies in particular to the first plasma unit 27.
  • a control unit, not shown, which is connected in a corresponding manner to the plasma units is provided.
  • FIG. 4 shows an alternative arrangement of the plasma units 27 and 28, wherein the second plasma units 28 are arranged in the same manner as shown in FIG. However, the second plasma unit 27 extends below and transverse to the first plasma units 28.
  • the first plasma unit is arranged such that a plasma generated by it lies in a radiation area of all the second plasma units 28 when they are supplied with power.
  • the first plasma unit 27 lies outside a projection region of a substrate to be treated, which is indicated by the dashed line in FIGS. 3 and 4.
  • FIG. 5 shows further arrangement examples of the first plasma unit 27 relative to second plasma units 28, which in turn may be arranged exactly as shown in FIGS. 3 and 4.
  • the first plasma units 27 are shown hatched in FIG. 5 to improve the illustration.
  • the dotted circle in FIG. 5 again represents a projection surface of a substrate to be treated.
  • FIG. 27 a an arrangement of the first plasma unit is shown, which substantially corresponds to the arrangement according to FIG. 3, that is to say. the first plasma unit extends substantially parallel to the second one 11 004311
  • the arrangement according to FIG. 4 is shown, in which the first plasma unit extends perpendicular to the second plasma units 28 and a plasma area of the first plasma unit covers the plasma area of all second plasma units.
  • first plasma unit extends substantially parallel to the second plasma units 28, but is formed shorter and moreover between two adjacent plasma units 28 is arranged.
  • the first plasma units may in particular also be arranged above the first plasma units as long as their plasma region overlaps a radiation region of the adjacent second plasma units 28.
  • a first plasma unit is shown, which extends perpendicular to the sheet plane between two adjacent second plasma units 28.
  • the first and second plasma units 27, 28 may be of a different basic type and, in particular, they may have different firing powers.
  • the first plasma unit 27 may have a significantly lower ignition power than the ignition power of the second plasma units 28.
  • an ignition performance of at most 70% of the ignition power of the second plasma units preferably a maximum of 50% of the ignition power of the second plasma units.
  • the ignition power of the first plasma unit 27 should preferably have a maximum of 20% or even less than or equal to 10% of the ignition power of the second plasma units 28.
  • the first plasma units are each shown as not having a projection area of the substrate 2 14 HQD-28423 overlap. Although this may be advantageous to minimize ignition effects on a substrate surface, it is also possible to allow such overlap. It may be advantageous to provide the first plasma unit further apart from the substrate than the second plasma units. However, this is not absolutely necessary, depending on the actual ignition power of the first plasma unit 27, in particular if the ignition power of the first plasma unit lies in a power range in which the second plasma units generate a plasma for a treatment of the substrate 2.
  • first plasma unit 27 which differs in terms of its arrangement, size and otherwise from second plasma units.
  • second plasma units 28 it is also possible to dispense with such a separate first plasma unit 27 completely, and to provide only the arrangement of second plasma units 28, provided that they are individually and or in groups controllable.
  • a substrate to be treated is loaded into the process chamber 4 and held in a position and as shown in FIGS. 1 and 2.
  • the process chamber 4 is closed via the door element 13, and a desired gas atmosphere within the process chamber 4 is set.
  • the substrate 2 can be heated to a desired process temperature within the process chamber 4.
  • the gas is as hot as the substrate in a cold wall reactor, and thus a plasma would also be ignitable at a lower power for that reason.
  • the substrate may be at a temperature in the range between 15 HQD-28423
  • the first plasma unit 27 is first subjected to an ignition power in order to ignite a plasma in the plasma region of the first plasma unit 27.
  • an ignition power in order to ignite a plasma in the plasma region of the first plasma unit 27.
  • the adjacent to the first plasma unit 27 plasma unit 28 is applied to a power that is substantially lower than its ignition performance, but sufficient plasma within the plasma region of the second plasma unit 28 upright receive.
  • the second plasma unit 28 can be supplied with a power with which the plasma is to be subjected to an initial treatment. During the treatment of the substrate 2, the power can then be changed accordingly, but at the beginning, the desired power can be set directly.
  • the second plasma units 28 can each be exposed to a power which is substantially lower than their ignition power. In particular, they can be directly applied with the power suitable for an initial substrate treatment. The application of an ignition power to the second plasma units 28, which would initially generate very high-energy plasma particles, is not necessary at any time since the respective plasmas in the region of the second plasma units 28 are ignited by adjacent plasmas. 16 HQD-28423
  • high-quality coatings can be generated from the outset using plasmas without damaging the substrate surface during the ignition process.
  • a progressive plasma surface can be generated, which can optionally contribute to a cleaning of the substrate surface.
  • the plasma treatment may be controlled from the beginning with a desired plasma power. After the gentle ignition, the plasma power can be increased or decreased (changed) with arbitrary mathematical functions.
  • the plasma units can also be arranged differently, and it is also possible to provide a distance adjustment between the plasma units and the substrate, as shown, for example, in the unpublished DE 10 2009 060 230.
  • the designated firing antenna such as the first plasma unit 27, it is possible to generate significantly less high-energy plasma particles during the firing process, since the designated firing antenna can be provided with a lower firing power than the main units, ie. the second plasma units 28.
  • the proportion of the still high-energy plasma particles which hit the substrate can be substantially minimized.
  • the second plasma units 17 HQD-28423 By appropriate control of the second plasma units 17 HQD-28423, the initial growth rate of a layer to be formed on the substrate can be greatly reduced, resulting in higher-quality layers with respect to the charge-to-break-down Q b ( or the interface state density D it results.
  • the second plasma units 27 it is also possible to use only one or one of the second plasma units for ignition. This can be realized by implementing a single or group control of the second plasma units. For example, if the first plasma unit 27 were not provided in FIG. 2, for example, the two outer plasma units 28 located outside the projection area of the substrate 2 could be subjected to ignition power at the beginning of the process in order to ignite a plasma in their area. The remaining second plasma units could in turn then be subjected to a much lower power than the ignition power, in turn, to provide a progressive plasma surface. This would run in this example from the outside in.
  • the present structure is particularly suitable for the application of a pulsed 11 004311
  • Plasmas during substrate treatment which can significantly reduce the average power over other pulsed plasmas.
  • a faster pulse allows faster refreshment of the reactive species.
  • one, in particular the designated ignition antenna, i. the first plasma unit 27, are operated substantially continuously.
  • mutual pulsing of the piasm units would also be possible, as long as there is still a plasma present, to achieve a renewed ignition of the plasma each with a power that is significantly lower than the ignition power of the corresponding plasma unit.
  • the plasma unit 27 which overlaps with the plasma area of the adjacent plasma unit 28 and is designed to reduce the required ignition power in the adjacent plasma unit 28 is for performing the method of cleaning the plasma processing apparatus or a substrate accommodated therein 2.
  • the customary plasma devices 28 can be provided in the process chamber 4, these plasma units 28 then having to be able to be sequentially ignited one after the other.
  • the plasma units 28 can be ignited in different sequences.
  • the central plasma unit which is located above the support shaft 20, is ignited first and then the respectively adjacent plasma units 28 such that two plasma waves travel from the center of the process chamber to the edge of the process chamber.
  • the two plasma waves run essentially symmetrically through the process chamber 4.
  • plasma waves run in succession through the process chamber 4, for example in the order of 2 to 100 pulses of the plasma, it being possible to work either with the same power or with different powers of the plasma units, ie different or identical plasma intensities can be used for cleaning.
  • this is advantageously heated to a temperature which is higher than the temperature of the ambient gas, preferably to a temperature greater than 50 ° C.
  • a pressure change is advantageously applied in the process chamber 4, while the plasma wave moves through the process chamber 4.
  • a fast pump / rinse cycle can be used, in which the purge gas, in particular an inert purge gas or the process gas is admitted from 100 mTorr to 1 Torr and then pumped out again.
  • the generation of the plasma wave is coordinated and takes place simultaneously with the application of the pressure change within the process chamber 4.
  • the cleaning effect can be further enhanced by using appropriate gases in which the pressure wave progresses more slowly, e.g. Gases with larger atomic / molecular mass, as it is easier to coordinate plasma wave and pressure change.
  • gases e.g. Gases with larger atomic / molecular mass, as it is easier to coordinate plasma wave and pressure change.
  • gas is admitted at the position from which the plasma wave emanates, and the gas is sucked off at the position at which the plasma wave ends.
  • a fluid flow can be generated which moves in the same direction as the plasma wave. Accordingly, particles dissolved by the plasma wave can be transported away by the gas stream, in particular by being sucked away by means of a suction device.
  • FIG. 6 shows schematically the plasma treatment device 1, which is connected to a control device 40.
  • the control device 40 is designed such that the individual plasma devices 28 can be controlled individually in such a way that plasma devices 28 can be controlled sequentially via the control device 40. In this way, a plasma wave can be generated in the process chamber 4, which moves defined in a direction within the process chamber 4.
  • the control device 40 is furthermore connected to gas inlet means 41 and gas suction means 42, wherein the control device 40 can control a pressure change in the process chamber 4 in this way and in particular also control a gas flow, in particular of the process gas, from the gas inlet 41 to the gas outlet or to the suction device 42 can, to allow efficient particle transport.

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Abstract

L'invention concerne un procédé pour nettoyer un dispositif de traitement par plasma et/ou un substrat placé dans un dispositif de traitement par plasma, ledit dispositif de traitement par plasma comportant au moins deux unités de plasma, au moins deux des unités de plasma étant allumées de manière séquentielle pour produire une onde de plasma se propageant à travers le dispositif de traitement par plasma. Une autre solution consiste à produire une onde de pression plasma pulsatoire au moyen d'une unité de plasma
PCT/EP2011/004311 2010-08-27 2011-08-26 Procédé et dispositif de commande pour nettoyer un dispositif de traitement par plasma et/ou un substrat placé dans un dispositif de traitement par plasma WO2012025249A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102010035593.3A DE102010035593B4 (de) 2010-08-27 2010-08-27 Verfahren und Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
DE202010015818U DE202010015818U1 (de) 2010-08-27 2010-08-27 Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
DE202010015818.4 2010-08-27
DE102010035593.3 2010-08-27
DE102010053363.7A DE102010053363B4 (de) 2010-08-27 2010-12-03 Verfahren und Steuervorrichtung zur Reinigung einer Plasmabehandlungsvorrichtung und/oder eines in einer Plasmabehandlungsvorrichtung aufgenommenen Substrats
DE102010053363.7 2010-12-03

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WO2012025249A1 true WO2012025249A1 (fr) 2012-03-01

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269881A (en) * 1991-09-03 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus and plasma cleaning method
US5350454A (en) * 1993-02-26 1994-09-27 General Atomics Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves
EP0933806A1 (fr) * 1996-11-14 1999-08-04 Tokyo Electron Limited Procede de nettoyage d'un dispositif de traitement au plasma et procede de traitement au plasma
US20030168172A1 (en) * 2002-03-11 2003-09-11 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
DE102008036766A1 (de) 2008-08-07 2010-02-11 Alexander Dr. Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269881A (en) * 1991-09-03 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus and plasma cleaning method
US5350454A (en) * 1993-02-26 1994-09-27 General Atomics Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves
EP0933806A1 (fr) * 1996-11-14 1999-08-04 Tokyo Electron Limited Procede de nettoyage d'un dispositif de traitement au plasma et procede de traitement au plasma
US20030168172A1 (en) * 2002-03-11 2003-09-11 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
DE102008036766A1 (de) 2008-08-07 2010-02-11 Alexander Dr. Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma

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