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Definitions

• the present disclosure relates to organic films for use in organic electronic devices.
• Porphyrins are one of the most important biological molecules essential for life and responsible in nature for such oxidation-reduction reactions as photosynthesis in plants and respiration in animals. Synthetic porphyrins have broad applications as useful optoelectronic materials in different fields of organoelectronics, such as solar cells,
• porphyrins as opto-electronic materials include efficiency of charge separation and charge transport even in thick films of assembled porphyrins, strong absorbance in the visible region, high chemical stability, and ability to tune optoelectronic properties.
• Porphyrins have a modest spectral overlap with solar spectrum and the material preparation and isolation is difficult.
• fluorescence of porphyrinoids in the near infrared (NIR) is quite rare. For a number of potential optoelectronic applications strong absorption in NIR spectral region is desired.
• Nickel(II) porphyrins have rapid decay of the excited state due to nickel centered (d,d) quenching and at the same time demetalation of such porphyrins does not have synthetic potential since it requires harsh conditions not suitable with the presence of alkoxy groups (for example, concentrated sulfuric acid).
• Nickel(ET) porphyrinoids have not found any applications in photovoltaics and no emission has been reported for such porphyrins containing nickel atom or donor alkoxy groups. Additionally, this usually causes difficulties with synthesis, and isolation is possible only in small amounts.
• One of the most limiting factors in use in organoelectronics of many derivatives of porphyrins with extended conjugation is both their very low solubility and inability to sublime.
• a compound comprising a non- activated porphyrin fused with one or more non-activated polycyclic aromatic rings or one or more non-activated hetrocyclic rings.
• the compound comprises a non-activated porphyrin fused with one or more non-activated polycyclic aromatic rings and has a formula selected from the group consisting of: wherein M is two hydrogen atoms or any element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, P, As, Sb, Bi, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,
• the compound comprises a non-activated porphyrin fused with one or more non-activated heterocyclic rings and the compound has a formula selected from the group consisting of:
• M is two hydrogen atoms or any element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, P, As, Sb, Bi, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, and U; wherein Ri-R M are independently selected from the group consisting of electron donors and acceptors, such as hydrogen, alkyl, fluoroalkyl, hydroxy., alkoxy, halo (CI, Br, I), chalcogens (S, Se, Te), mercapto group, amino, cyano, alkenyl, alkynyl, and aryl.
• X is a heteroatom selected from the following list: O, S, Se, Te, N, P, As, Si, Ge, B; and each dotted arc is all possible combinations of fused rings, both aromatic and unsaturated or combinations of both aromatic and unsaturated rings including four, five, six, seven, eight, or nine-membered rings, and all possible combinations of fused heterocyclic rings with one or more heteroatoms, including all possible combinations of all heteroatoms in all possible arrangements.
• a process for fusing one or more non-activated polycyclic rings to a non-activated porphyrin core comprises heating a quantity of precursor porphyrins to a fusion temperature in an inert gas environment; holding the precursor porphyrins at the fusion temperature for a predefined period of time until the precursor porphyrins melt and form a mixture of fused porphyrins; cooling the mixture of fused porphyrins to room temperature; and separating the mixture of fused porphyrins into various fused porphyrin compounds.
• the fusion takes places when the prophyrins are in the melted phase.
• the fusion temperature is above the melting point of the precursor porphyrins.
• the method of the present disclosure enables fusion of porphyrin rings to one or more polycyclic aromatic rings or heterocyclic rings without activation of the porphyrin rings or activation of the aromatic rings or heterocyclic rings.
• an organic photosensitive device incorporating the fused porphyrin material disclosed herein and a method for fabricating such organic photosensitive device are also disclosed.
• Such organic photosensitive device incorporating the fused porphyrin material disclosed herein and a method for fabricating such organic photosensitive device are also disclosed.
• photosensitive devices include photovoltaic devices which convert light into photocurrent and thereby supply electrical power to a circuit and other embodiments such as photodetectors, for example.
• FIG. 1 illustrates the synthesis of mono (ZnMFBPP), doubly (ZnDFBPP) and quardruply (ZnQFTPP) fused pyrene-porphyrins.
• FIG. 2 shows the absorption spectra of ZnBPP, ZnMFBPP, ZnDFBPP in dichloromethane solution.
• FIG. 3 shows the absorption spectra of ZnBPP, ZnMFBPP, ZnDFBPP in the thin film.
• FIG. 4 shows room temperature emission spectra of ZnMFBPP, ZnDFBPP in dichloromethane.
• FIG. 5 shows the absorption spectra of ZnQFTPP in pyridine solution and in the thin film
• FIG. 6 illustrates the synthesis of ZnBTP and ZnFBTP.
• FIG. 7 shows the absorption spectra of ZnBTP and ZnFBTP in dichloromethane solution and in the thin film.
• FIG. 8 shows the JV characteristics for ZnDFBPP and ZnPh2DFBPP in ITO/spin- cast porphyrin layer(100 AyC 60 (400 A)/BCP (100 A)/A1(1000 A) devices.
• FIG. 8a shows the JV characteristics for ZnDFBPP in ITO/ZnDFBPP(l 00 A)/C «) (400 A)/BCP (100 A)/A1(1000 A) devices.
• FIG. 9 shows the EQE response for ZnDFBPP in ITO/spin-cast porphyrin layer(100 AyC «)(400 A)/BCP (100 A)/A1(1000 A) devices.
• FIG. 9a shows the EQE response for ZnDFBPP in ITO/donor layer(100
• FIG. 10 shows the EQE response for in situ generated by thermal annealing at 530°C ZnQFTPP in ITO/porphyrin(l 00 A)/C 60 (400 A) BCP (100 A)/A1(1000 A) devices.
• FIG. 11 shows the JV characteristics for ZnFBTP in ITO/porphyrin(100
• FIG. 12 shows the EQE response for ZnFBTP in ITO/porphyrin(100 A)/C 60 (400 A)/BCP (100 A)/A1(1000 A) devices.
• FIG. 13 illustrates the synthesis of cyanophenyl porphyrin dimer.
• FIG. 14 illustrates the synthesis of pyrene porphyrin trimer.
• FIG. 15 shows the UV7VIS spectra of ZnBTP, cyano-phenyl porphyrin dimer and pyrene porphyrin trimer in the thin film.
• FIG. 16 shows the JV characteristics for cyano-phenyl porphyrin dimer in
• FIG. 17 shows the JV characteristics for pyrene porphyrin trimer in
• FIG. 18 shows the JV characteristics for bis-pyrene porphyrin in
• FIG. 19 shows the JV characteristics for ZnBTP in ITO/porphyrin(100
• FIG. 20 shows the JV characteristics for diphenyl porphyrin in ITO/porphyrin(100 A)/C 6 o(400 AyBCP (100 A)/A1(1000 A) devices.
• FIGS. 21 (a)-21 (p) show the various basic structures of porphyrins fused with polycyclic aromatic hydrocarbons according to an embodiment.
• FIGS. 22(a)-22(u) show the basic structures of additional aromatic hydrocarbons that can be fused with porphyrins: acenathphylene (a), phenanthrene (b, c), phenalene (d), coronene (j), acenes (k,l,m), rylenes (n, o, p, q), and pyrene (r).
• FIGS. 23(a)-(g) show the basic structures of porphyrins fused with polycyclic heterocyclic rings according to another embodiment.
• FIG. 25 shows the basic structure of porphyrin olygomers.
• FIG. 26(a)-(f) shows H NMR spectra of ZnBPP, ZnMFBPP, ZnDFBPP,
• FIG. 27 is a schematic illustration of the architecture of an example of a photosentive device incorporating the compounds disclosed herein.
• FIG. 28 is a flowchart showing the method of fusing non-activated p ⁇ hyrins with one or more non-activated aromatic rings according to the present disclosure.
• the present disclosure describes a new method of preparation of multiply fused aromatic rings with a porphyrin core which does not require any activation and is possible without any solvents and reagents by previously unknown flash pyrolysis of porphyrins singly connected with the corresponding aromatic ring at high temperatures.
• elevated temperatures 500-530° C under nitrogen
• 0 «-pyrenyl substituted porphyrin ZnBPP undergoes a thermal ring closure yielding the desired mono- ZnMFBPP and regioisomeric doubly-fused porphyrins ZnDFBPP (FIG 1).
• the product ratio (ZnMFBPP : ZnDFBPP) and reaction yield can be controlled by varying the reaction time.
• the inventors have found that thermal annealing thin films or small amounts (50-100 mg) of to-pyrenyl-porphyrin ZnBPP yields ZnDFBPP nearly quantitatively. This reaction has also proven to be scalable, in excess of several grams, although with smaller isolated yields of ZnDFBPP of about 25- 35%.
• the major byproduct in large scale reactions involves the loss of one di-tert-butylphenyl group from ZnDFBPP. While this byproduct affects yields of ZnDFBPP, the loss of a di-tert-butylphenyl groups does not affect the optical properties of the compound, such that the yield of R absorbing and emitting material remains high. All meso-porphyrinic positions appear to be
• the number of fusion sites of the substituents at meso-porphyrinic positions does not have a limit.
• Structure assignment for both regioisomers can be done by MR spectroscopy based on the number of equivalent di-tert-butyl-phenyl groups, since regioiomer anti- ZnDFBPP has only one set and syn-ZnDFBPP has two independent sets of signals of protons for the di-tert-butylphenyl groups.
• anti-ZnDFBPP and syn- ZnDFBPP have quite similar properties.
• the process for fusing one or more non- activated polycyclic rings to a non-activated porphyrin core comprises heating a quantity of precursor porphyrins to a fusion temperature in an inert gas environment (block 210) and holding the precursor porphyrins at the fusion temperature for a predefined period of time until the precursor porphyrins melt and form a mixture of fused porphyrins (block 220).
• the mixture of fused porphyrins is then cooled to room temperature (block 230) and separated into various fused porphyrin compounds (block 240).
• the fused porphyrin can be separated using column
• ZnBPP*MeOH (lg, 0.84S mmol) was placed into a glass tube (directly or in an appropriate container such as a glass boat).
• the glass tube was placed into a furnace preheated to a fusion temperature in an inert gas environment (nitrogen, neon, or argon, for example) and held at the fusion temperature for a predefined time period until the precursor material melt and form a mixture of fused porphyrins.
• an inert gas environment nitrogen, neon, or argon, for example
• the fusion temperature will depend on the melting (or transition) point of the starting porphyrin material to be fused.
• the fusion temperature can be lower than 500° C.
• the fusion temperature could be higher than 530° C.
• the fusion temperature is above the melting (or transition) point of the precursor porphyrins.
• the fusion temperature was between 500° C - 530° C.
• the furnace was preheated to a fusion temperature of 530° C and held at that temperature for about 5 minutes.
• the furnace temperature rose to 530° C in 1-2 minutes and after additional approx. 1-2 minutes, the precursor non-activated porphyrin material melted.
• the precursor material turned into a brown color and bubbles appeared.
• the glass tube was removed from the furnace and the mixture of fused porphyrins was cooled to room temperature while under the inert gas environment. Prolonged heating causes reduced yields of the doubly fused product ZnDFBPP.
• the optimal dwell time at the fusion temperature is the duration which results in the maximum amount of the desired fused product in the reaction mixture. This dwell time can be found experimentally.
• the fusion dwell time will depend on the nature of the polycyclic aromatic rings and stability of the products at high temperature. If the fusion dwell time is short, a significant amount of the starting ⁇ -yrin material may be present in the reaction mixture. If the fusion dwell time is too long, already formed fused porphyrins can decompose (for example, with the loss of one or two aryl substituents such as di-tert- butyl-phenyl group).
• the amount of fused product will decrease. Therefore, one can determine the fusion dwell time that would produce the maximum amount of the fused product
• Higher purity doubly fused porphyrin ZnDFBPP can be obtained by column chromatography on silica gel (gradient elution with hexanes: dichloromethane mixtures 1000:50 to 800:200).
• the first fraction containing compound ZnMFBPP was additionally purified by silica gel column (gradient elution with hexanes:ethyl acetate mixtures 1000:5 to 1000:15) and crystallized from dichloromethane by layered addition of methanol to give compound ZnMFBPP (0.54 g, 9 %).
• the process for fusing non- activated porphyrins can be incorporated into a process for fabricating a photosensitive device such that the non-activated porphyrins in the donor material can be fused in the device form factor.
• the thermal fusion is conducted with the precursor porphyrins in thin films by spin-coating the precursor porphyrins from appropriate solution on glass, indium tin oxide or other surfaces.
• One such method for fabricating a photosensitive device forms a planar donor- acceptor heterojunction device.
• the method comprises depositing a first electrode layer on a suitable substrate and depositing a layer of organic donor material over the first electrode, thus forming an interim structure, wherein the organic donor material comprises a precursor porphyrin material.
• the interim structure is then heated to a fusion temperature for the particular precursor porphyrin material.
• the heating is conducted in an inert gas environment (e.g. nitrogen or other inert gas) and held at the fusion temperature for a predefined period of time until the precursor porphyrin material melts and forms a layer of mixture of fused porphyrins.
• an inert gas environment e.g. nitrogen or other inert gas
• a layer of an organic acceptor material is then deposited over the layer of the organic donor material, wherein the organic acceptor material layer is in direct contact with the organic donor material layer, whereby the organic donor material layer and the organic acceptor material layer form a photoactive region.
• a second electrode layer is then deposited over the organic acceptor material layer.
• the first electrode and the second electrodes can be anode and cathode, respectively and the suitable electrode materials are well known to the art.
• the anode can be formed using a transparent electrode material such as ITO (indium tin oxide) and the cathode can be formed using a metal such as silver.
• the device may further comprise a layer of bathocuproine (BCP) disposed between the acceptor material layer and the second electrode, the BCP functioning as an exciton blocking layer in the device.
• BCP bathocuproine
• a method for fabricating a photosensitive device having a bulk donor-acceptor heterojunction comprises depositing a first electrode layer on a suitable substrate and depositing a layer of a mixture of an organic donor material and an organic acceptor material over the first electrode, thus forming an interim structure, wherein the organic donor material comprises a precursor porphyrin material.
• the interim structure is then heated to a fusion temperature for the particular precursor porphyrin material for fusing the porphyrins.
• the heating is conducted in an inert gas environment and held at the fusion temperature for a predefined period of time until the precursor porphyrin material in the mixture of the organic donor and acceptor materials melts and forms fused porphyrins.
• the fused porphyrins and the organic acceptor material form a photoactive region having a bulk heterojunction.
• other layers of the photosensitive device such as a second electrode layer, is deposited over the photoactive region.
• the device may further comprise a layer of BCP disposed between the photoactive region and the second electrode, the BCP functioning as an exciton blocking layer in the device.
• a quantity of fused porphyrin compounds can be used to form a donor layer of a photoactive region in a photosensitive device.
• the donor materials of the present disclosure can be used to form a bulk heterojunction configuration of a photosensitive device.
• more than one component can be mixed or blended for deposition including donor and acceptor materials together.
• the donor materials can be mixed with a soluble acceptor, such as PCBM or PTCDI, to spin-coat or spin-cast the photoactive region having a bulk heterojunction configuration.
• the fused non-activated porphyrin donor materials disclosed herein can be co-deposited with other materials, such as another donor material or an acceptor material.
• porphyrin rings with nickel(II) metalation and PAHs with alkoxy groups for unsubstituted PAHs rings with different metalated porphyrins (Zn, Pt, Pd, Cu, Pb, etc).
• fusion of unactivated aromatic rings with unactivated porphyrin rings cannot be achieved by known methods for similar fusions.
• the thermal fusion process does not require any solvents and reagents. Thus, because of its efficiency, the thermal fusion can be described as "click" chemistry reaction, which can be used for generating different fused products in situ by annealing thin films of starting non-fused porphyrins directly on electrodes (e.g., ⁇ ) during manufacture of optoelectronic devices.
• the fused non-activated porphyrins of the present disclosure exhibit emission in R spectral region with one of the highest efficiencies reported in literature with quantum yields of emission gradually increasing with the number of fused sites in going into NIR from 3.3% for the starting non-fused porphyrin ZnBPP at 590 and 640 nm to 8% for the mono-fused porphyrin ZnMFBPP at 716 am and 10% for the doubly fused porphyrin ZnDFBPP at 816 nm.
• This trend is quite different from the effect of extending conjugation in other porphyrins.
• porphyrinoids in general are very poor emitters in NIR spectral region and NIR emission beyond 720 nm from other fused systems involving meso position have not been reported.
• FIG. 1 shows the synthesis of mono (ZnMFBPP), doubly (ZnDFBPP) and quardruply (ZnQFTPP) fused pyrene-porphyrins.
• FIG. 2 shows the absorption spectra of ZnBPP, ZnMFBPP, ZnDFBPP in dichloromethane solution.
• FIG. 3 shows the absorption spectra of ZnBPP, ZnMFBPP, ZnDFBPP in the thin film.
• FIG. 4 shows the room temperature emission spectra of ZnMFBPP, ZnDFBPP in dichloromethane.
• FIG. 5 shows the absorption spectra of ZnQFTPP in pyridine solution and in the thin film.
• FIG. 6 shows synthesis of ZnBTP and ZnFBTP.
• FIG. 7 shows the absorption spectra of ZnBTP and ZnFBTP in dichloromethane solution and in the thin film.
• FIGS. 8-12 show various measured performance characteristics of some examples of photovoltaic devices fabricated with fused porphyrins as the organic donor material.
• FIG. 8 shows the JV characteristics for ZnDFBPP and ZNPh2DFBPP in ⁇ /spin-cast porphyrin layer(100
• FIG. 8a shows the JV characteristics for ZnDFBPP in ITO/ZnDFBPP(100 A)/C 60 (400 A) BCP (100 A)/Al(1000 A) devices as measured by the inventors.
• the JV characteristics of conventional devices, one using 400A copper phthalocyanine (CuPc) as the donor layer and another using the spin-cast donor layer of ZnBPP (see FIG. 1) with addition of 4,4'-bipyridine are also shown in FIG. 8a for reference.
• porphyrin ZnDFBPP has two bulky di-tert-butyl phenyl groups at the meso positions of the porphyrin ring, limiting direct overlap with the ⁇ -system of the porphyrin chromophore.
• V oc open circuit voltage
• AEDA interfacial energy level offset
• FIG. 8a illustrates the performance of solar cells (the current density vs. voltage (J-V) characteristics) incorporating fused pyrene porphyrin ZnDFBPP as a donor by using spin-casting technique.
• FIG. 8a illustrates the performance of solar cells (the current density vs. voltage (J-V) characteristics) incorporating fused pyrene porphyrin ZnDFBPP as a donor and reference copper phthalocyanine (CuPc) cell by thermal evaporation, and reference ZnBPP/4,4'-bipyridyl cell by using spin-casting technique.
• CuPc copper phthalocyanine
• the cell structure is lTO/ZnDFBPP(100 A)/C 60 (400 A)/BCP(100 A)/A1(1000 A), similar to that used for the copper phthalocyanine (CuPc) reference cell and related porphyrin donor based cells.
• the current density vs. voltage (J-V) characteristics were measured in the dark and under simulated 1 sun (1 kW/m 2 ) AM1.5G illumination. Efficiencies were determined after correction for spectral mismatch between Xe source lamp and ASTM G173-03 global.
• the short circuit current-density of J sc 5.69 mA/cm 2 obtained for the porphyrin ZnDFBPP device is among the highest values reported for porphyrin solar cells and 32% higher than for standard CuPc cell. This enhancement appears to be due to panchromatic response up to 950 nm, with peak values of >7% in the 850-900 nm region (FIG 9a).
• the relatively high EQE demonstrates the utility of employing intense broadband absorption throughout the visible and IR for achieving enhanced solar energy conversion efficiency.
• FIG.9 illustrates the performance of solar cells (EQE response) incorporating fused pyrene ⁇ ⁇ ) ⁇ ZnDFBPP as a donor by using spin-casting technique.
• FIG. 9a illustrates the performance of solar cells (EQE response) incorporating fused pyrene porphyrin ZnDFBPP as a donor and reference copper phthalocyanine (CuPc) cell by thermal evaporation, and reference ZnBPP/4,4'-bipyridyl cell by using spin-casting technique.
• CuPc copper phthalocyanine
• the cell structure is ITO/ZnDFBPP(100 A)/C «)(400 A) BCP(100 A) A1(1000 A), similar to that used for the copper phthalocyanine (CuPc) reference cell and related porphyrin donor based cells.
• FIG. 10 shows the EQE response for ZnQFTPP in rrO/p ⁇ hyrin(100
• FIG. 11 shows the JY characteristics for ZnFBTP in ITO/ZnFBTP(100 A)/C 60 (400 A)/BCP (100 A) A1(1000 A) devices as measured by the inventors.
• FIG. 11 shows the JY characteristics for ZnFBTP in ITO/ZnFBTP(100 A)/C 60 (400 A)/BCP (100 A) A1(1000 A) devices as measured by the inventors.
• FIG. 12 shows the EQE response for ZnFBTP in ITO/porphyrin(100 A)/Ceo(400 A)/BCP (100 A)/A1(1000 A) devices as measured by the inventors.
• This data shows that porphyrins fused with heterocyclic rings can also be used as donor layers for organic solar cells.
• FIG. 12 illustrates the performance of solar cells (EQE response) incorporating benzothienyl-fused p ⁇ hyrin ZnFBTP as a donor by thermal evaporation with photovoltaic response from porphyrin extended up to 1100 nm.
• FIGS. 13-17 and 25 show the synthesis of a porphyrin dimer, specifically a cyano-phenyl porphyrin dimer.
• FIG. 14 shows synthesis of pyrene porphyrin trimer.
• FIG. 15 shows UV7VIS spectra of ZnBTP, cyano-phenyl porphyrin dimer and porphyrin trimer in the thin film as measured by the inventors.
• FIG. 13 shows the synthesis of a porphyrin dimer, specifically a cyano-phenyl porphyrin dimer.
• FIG. 14 shows synthesis of pyrene porphyrin trimer.
• FIG. 15 shows UV7VIS spectra of ZnBTP, cyano-phenyl porphyrin dimer and porphyrin trimer in the thin film as measured by the inventors.
• FIG. 13 shows the synthesis of a porphyrin dimer, specifically a cyano-phenyl porphyrin dimer.
• FIG. 14 shows
• FIG. 16 shows the JV characteristics for cyano-phenyl porphyrin dimer in ITO/porphyrin(100 A)/C «)(400 A)/BCP (100 A)/Al(1000 A) devices as measured by the inventors.
• FIG. 17 shows the JV characteristics for pyrene porphyrin trimer in
• Photophysical properties of olygoporphyrins are different from monoporphyrins. Some examples are: faster hole hopping from one porphyrin unit to another; and porphyrin units are electronically coupled much stronger than two separate porphyrin units. This causes broadening of absorption spectrum with better overlap with solar spectrum (see FIG IS). Besides that electronic coupling between porphyrin units should potentially provide better charge transport which is essential for getting materials with larger exciton diffusion length.
• Some problems involving applications of olygoporphyrins include film morphology
• FIGS 16 and 17 show that olygopo ⁇ yrins (dimer, trimer) give photoresponse as donor layers by using spin-casting technique meaning that there is no problems with morphology of thin films, charge separation and charge transport. Therefore, this opens opportunities for their applications in devices with various architecture where olygoporphyrins serve as donor materials.
• Advantages of olygoporphyrins can be better organization of the thin films together with better overlap with solar spectrum as illustrated by FIG. 15.
• porphyrins porphyrin oligomers, phthalocyanines and subphthalocyanines with coordinative additives, such as pyridines, as donors and paired them with the acceptor C .
• coordination additives prevents aggregation giving much better open circuit voltages especially for compounds with pronounced tendency for aggregation - from 0.3 V to 0.44 V for diphenyl ⁇ -yrin (FIG.20), from 0.35 V to 0.56 V for porphyrin dimer (FIG. 16).
• the addition of coordination additives improves Jsc and fill factor as well. This can be illustrated, for example, by increasing Jsc from 2.17 to 2.87 mA/cm 2 and fill factor from 0.42 to 0.51 for benzothiophene substituted ⁇ ⁇
• FIG. 16 shows the JV characteristics for porphyrin dimer as one of the representative members of olygoporphyrins in JTO/po ⁇ yrin(100 AyC «)(400 A)/BCP (100 A)/A1(1000 A) devices by using spin-casting method to deposit a porphyrin layer.
• This demonstrates the utility of olygoporphyrins as donor layers in organic photovoltaic cells.
• Device performance is significantly improved by using coordination additives, such as 4,4'- bipyridyl, which prevents aggregation and increases open circuit voltage, short circuit current and fill factor.
• the overall device performance can be improved by more than 2 times.
• FIG. 18 shows the JV characteristics for bis-pyrene porphyrin ZnBPP in
• Device performance is improved by almost 2 times by using pyridine as a coordination additive and further improved by about 20% by using 4,4'- bipyridyl as a coordination additive.
• the use of coordination additives increases open circuit voltage, short circuit current and fill factor, and, thus, overall performance by about 2.25 times.
• FIG. 19 shows the JV characteristics for bis-(3-benzothienyl)- porphyrin in
• FIG. 20 shows the JV characteristics for diphenyl porphyrin in ITO/porphyrin(100 A)/C ⁇ 5o(400 A)/BCP (100 A)/A1(1000 A) devices by using spin-casting method to deposit the porphyrin layer.
• Device performance is improved by using pyridine and further by about 2.5 times using 4,4'-bipyridyl as a coordination additive. This result and the results above suggest that such great improvement in device performance by using additives and spin casting method to deposit donor layer has general applications.
• FIGS. 21-24 All of the fused porphyrin compounds listed above and those depicted in FIGS. 21-24 are a new class of absorption material for application in organoelectronics.
• the basic structure of the new material can be seen in FIGS. 21(a)-(p) and FIGS.23(a)-(g).
• FIGS. 21(a)-(p) show the basis structures of porphyrins fused with polycyclic aromatic
• FIGS.23(a)-(g) show the basic structures of pophyrins fused with polycyclic heterocyclic rings.
• M is two hydrogen atoms representing free base porphyrins or any element selected from the following group: Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, P, As, Sb, Bi, PT, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, and U.
• Each of the R1-R54 are independently selected from the group consisting of electron donors and acceptors, such as hydrogen, alkyl, fluoroalkyl, hydroxy., alkoxy, halo (CI, Br, I), chalcogens (S, Se, Te), mercapto group, amino, cyano, alkenyl, alkynyl, and aryl.
• electron donors and acceptors such as hydrogen, alkyl, fluoroalkyl, hydroxy., alkoxy, halo (CI, Br, I), chalcogens (S, Se, Te), mercapto group, amino, cyano, alkenyl, alkynyl, and aryl.
• halo, halogen, alkyl, cycloalkyl, alkenyl, alkynyl, heterocyclic group aryl, aromatic group, and heteroaryl are known to the art and are defined, for example, in U.S. patent No. 7,279,704 at cols
• X is a heteroatom from the following list: O, S, Se, Te, N, P, As, Si, Ge, B.
• X can have two bonds as depicted or X can have coordination with additional one, two or three bonds with one, two or three ligands.
• the dotted arcs in the FIGS. 21 and 23 can be all possible combination of fused rings (both aromatic and unsaturated or combination of both aromatic and unsaturated rings including four, five, six, seven, eight, or nine-membered rings) and all possible combination of fused heterocyclic rings with one or more heteroatoms, including all possible combinations of all heteroatoms in all possible arrangement.
• Each of the dotted arc can be the same ring, or different rings (difference by size of rings and composition of rings).
• Two fused ends of porphyrins can be the same or different.
• Two fused ends of porphyrins can be naphthalene, anthracene, pyrene and thiophene rings as mentioned above or other polycyclic aromatic rings shown in FIGS. 22 and 24.
• FIGS.24(a) ⁇ (l) show heterocyclic rings.
• the fusion position on the polycyclic aromatic rings are marked with a wave-line and the connection with meso position of the porphyrins is marked with a black dot.
• i, j, and m are each independently 0 - 100.
• 22(a)-22(u) show the basic structures of additional aromatic hydrocarbons that can be fused with porphyrins: acenathphylene (a), phenanthrene (b, c), phenalene (d), coronene (j), acenes (k,l,m), rylenes (n, o, p, q), pyrene (r).
• the fused non-activated porphyrins and olygoporphyrins described herein can be incorporated in a donor/acceptor configuration as an optoelectronic material.
• the fused non-activated porphyrins and olygoporphyrins can be paired with acceptor materials to form the donor/acceptor heterojunctions of the photoactive regions in photosensitive devices.
• acceptor materials are C 6 o, C70, CM, F ]6 -CuPc, PTCBI, PTCDA, PCBM and PTCDI to name a few.
• the donor/acceptor heterojunctions of the photoactive regions utilizing the donor materials of the present disclosure can be formed using any of the known suitable methods.
• preferred methods include vacuum thermal evaporation, ink-jet deposition, such as described in U.S. patent Nos. 6,103,982 and 6,087,196, the disclosures of which are incorporated herein by reference in their entireties, organic vapor jet printing (OVJP), such as described in U.S. patent application publication No. 2008/0233287, the disclosure of which is incorporated herein by reference in its entirety.
• OJP organic vapor jet printing
• Other suitable deposition methods include solution processing such as spin coating, spray coating, or doctor blading. Solution processes are preferably carried out in nitrogen or other suitable inert atmosphere.
• the electrodes such as LiF/Al or BCP/Ag can be deposited by methods known in the art such as vacuum thermal evaporation.
• FIG.27 shows the architecture of an example of a photosensitive device 100 comprising an first electrode 110, a second electrode 130 and a photoactive region 120 disposed between the two electrodes.
• the first electrode 110 can be an anode typically formed of ⁇
• the second electrode 130 can be a cathode typically formed from Ag.
• the photoactive region 120 comprises the donor material based fused non-activated porphyrins as disclosed herein and an acceptor material.
• Example 1 ZnMFBPP and ZnDFBPP
• reaction mixture was then quenched with water, toluene was distilled off and the residue was subjected to column chromatography on silica gel (gradient elution with hexanes - ethyl acetate mixtures from 1:0 to 1000:5) to give 70-80% of 4,4,5,5- tetramethyl-2-(pyren- 1 -yl)- 1 ,3,2-dioxaborolane.
• MALDI TOF mass spectrometry 328 (M + ), requires 328.16 for C 22 H 21 BO 2 .
• the reaction mixture was stirred at the same temperature for 10 minutes, then was allowed to warm to 0° C in a water bath for 5 minutes and was quenched with acetone (20 ml).
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100: 1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate bromoporphyrin.
• UV/VIS CH 2 C1 2 ⁇ , ran, ( ⁇ ): 815 (81206), 741 (20628), 656 (5045), 559 (54452), 504 (151197).
• Emission CH 2 C1 2 ): ⁇ , 839 nm; quantum yield, 7.7%.
• syn-ZnDFBPP can be obtained by separation of a mixture oianti/syn ZnDFBPP using silica gel column (gradient elution with benzene:hexanes - 1:5 to 2:3) by collecting the last fractions followed by layered crystallization from dichloromethane-methanol mixture.
• UV/VIS CH 2 C1 2 ⁇ , nm, ( ⁇ ): 811 (91461), 736 (26446), 657 (10865), 527 (145812).
• Emission CH 2 C1 2 ): ma*, 829 nm; quantum yield, 12.8% .
• Example 2 ZnQFTPP.
• the reaction mixture was quenched with triethylamine (10 ml) and passed through filter filled with silica gel washing with dichloromethane. All purple fractions were collected, dichloromethane evaporated and the residue passed through filter filled with alumina washing with dichloromethane. All purple fractions were collected, dichloromethane was evaporated to volume 500 ml. To this solution of the free-base ⁇ - ⁇ - ⁇ ⁇ 30 ml of saturated solution of zinc(IT) acetate was added and the resulting mixture was stirred for 3 hours at ambient temperature. The reaction mixture was washed with water and dichloromethane solution was passed through filter filled with silica gel washing with dichloromethane.
• the reaction mixture was stirred at the same temperature for 10 minutes the was allowed to warm to 0° C in a water bath for 5 minutes and was quenched with acetone (20 ml).
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100: 1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate brominated porphyrin.
• MALDI-TOF MS (without matrix): 1164.32 (M ), requires 1164.22 for Cs-fe ⁇ Zn. Peak of the molecular ion could not be obtained by using HRMS (ESI/APCI).
• Example 3 ZnFBTP.
• Example 4 Cyano-phenyl porphyrin dimer.
• the reaction mixture was stirred at the same temperature for 10 minutes the was allowed to warm to 0° C in a water bath for 5 minutes and was quenched with acetone (20 ml).
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100:1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate brominated porphyrins. All crystals were collected by filtration after 30 minutes to give a mixture of mono and dibrominated porphyrins (2.39 g). This mixture was used for the next step without further separation.
• Example 5 Fyrene porphyrin trimer.
• the reaction mixture was stirred at the same temperature for 10 minutes, then was allowed to warm to 0° C in a water bath for 5 minutes and was quenched with acetone (20 ml).
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100:1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate brominated porphyrins. All crystals were collected by filtration after 30 min to give a mixture of mono and dibrominated porphyrins (ratio 2.3 : 1, 4.9 g, approx. 85%). This mixture was used for the next step without further separation.
• MALDI TOF 950 (M 1 ), requires 948.41 for Ce-taoN ⁇ n.
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100: 1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate brominated porphyrin.
• the reaction mixture was stirred at the same temperature for 10 minutes, then was allowed to warm to 0° C in a water bath for 5 minutes and was quenched with acetone (20 ml).
• the crude reaction mixture was passed through silica gel column, eluting with dichloromethane - pyridine mixture (100: 1). All green-purple fractions were collected, solvents were evaporated, the residue was dissolved in dichloromethane - pyridine mixture (95:5, 100 ml) and 200 ml of methanol was added to precipitate dibromoporphyrin.
• KN 21 , KN 22 , KN 23 , KN 24 KN 21 ', KN 22 ', KN 3> , KN ⁇ 'iDN 21 “, ⁇ 21 “, ⁇ 22 “, ⁇ 23 “, ⁇ 24 "] ⁇ trizinc(n) pyrene porphyrin trimer. (A).
• porphyrin VI 118 mg, 0.118 mmol
• porphyrin VIII 250 mg, 2.2 equiv.
• Pd(PPh 3 )4 27 mg, 0.26 mmol
• cesium carbonate 197 mg, 0.588 mmol
• toluene 20 ml
• DMF 10 ml
• Toluene was distilled off in vacuum and the residue was subjected to GPC column first (BioRad polystyrene-divinylbenzene copolymer beads, toluene).
• the first fraction was collected and subjected to column with silica gel eluting with hexanes-ethyl acetate mixtures.
• the first fraction was collected and the residue after evaporation of solvents was crystallized from dichloromethane-methanol mixture to give 30 mg (0.012 mmol, 10%) of ⁇ 3 -[10,10''-Bis(l-py ⁇ enyl)-5,5'5'',15,15 ⁇ 5''-hexakis(3,5-di-tert- butylphenyl)-te1 ⁇ acyclo-2,2 ⁇ 8'2''-te Orphyrirlato(6-)-1d ⁇ 21 KN 22 ', KN 23 ', KN ⁇ 'ftzinc ll).
• PV cells were grown on ITO-coated glass substrates that were solvent cleaned and treated in UV-ozone for 10 minutes immediately prior to loading into high vacuum chamber (base pressure 1-3* 10 "6 Ton).
• the following organic materials were purchased from commercial sources: Ceo (MTR Limited), 2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline (BCP) (Aldrich) and were purified by sublimation prior to use.
• Metal cathode material (Al) were used as received (Alfa Aesar). Materials were sequentially grown by vacuum thermal evaporation at the following rates: Ceo (2 A/sec), BCP (2 A/sec), Al (3-5 A/sec).
• the cathode was evaporated through a shadow mask with 1 mm diameter openings.
• the layers were spin coated for 40 sec. at 2000 rpm for a final thickness of 100 A.
• Current-voltage Q-V) characteristics of the PV cells were measured under simulated AM1.5G solar illumination (Oriel Instruments) using a Keithley 2420 3A Source Meter. Donor layer thicknesses and amount of additives were experimentally modified for highest power conversion efficiency.

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