WO2012008729A3 - 펄스 레이저 증착장치 및 이를 이용한 증착방법 - Google Patents

펄스 레이저 증착장치 및 이를 이용한 증착방법 Download PDF

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Publication number
WO2012008729A3
WO2012008729A3 PCT/KR2011/005098 KR2011005098W WO2012008729A3 WO 2012008729 A3 WO2012008729 A3 WO 2012008729A3 KR 2011005098 W KR2011005098 W KR 2011005098W WO 2012008729 A3 WO2012008729 A3 WO 2012008729A3
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WO
WIPO (PCT)
Prior art keywords
deposition
target materials
laser
deposition target
laser beam
Prior art date
Application number
PCT/KR2011/005098
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English (en)
French (fr)
Other versions
WO2012008729A2 (ko
Inventor
기형선
Original Assignee
국립대학법인 울산과학기술대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 국립대학법인 울산과학기술대학교 산학협력단 filed Critical 국립대학법인 울산과학기술대학교 산학협력단
Priority to US13/810,023 priority Critical patent/US20130180960A1/en
Publication of WO2012008729A2 publication Critical patent/WO2012008729A2/ko
Publication of WO2012008729A3 publication Critical patent/WO2012008729A3/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은, 레이저 빔을 발생시키는 레이저 발생부, 증착대상물과, 증착대상물에 증착될 복수 종류의 증착타겟재료들이 배치되는 진공 챔버, 레이저 발생부에서 발생되는 레이저 빔을, 증착타겟재료에 대응되는 복수 개의 레이저 빔들로 나누는 빔 분해기, 증착타겟재료에 대응되게 복수 개가 설치되며, 빔 분해기에 의해 나누어져 유입되는 레이저 빔들을 복수 개의 증착타겟재료들에 각각 집광 조사시키는 렌즈부들을 포함하는 펄스 레이저 증착장치를 제공한다. 이와 같이, 펄스 레이저 증착장치 및 이를 이용한 증착방법은, 진공 챔버 내부에 복수 종류의 증착타겟재료들을 배치한 상태에서, 레이저 발생부로부터 발생된 레이저 빔을 빔 분해기로 증착타겟재료 개수에 대응되게 나눈 후, 변감쇄기들을 통해 시간에 따라 출력이 각각 변화되는 상태로 증착타겟재료들에 집광 조사되게 한다.
PCT/KR2011/005098 2010-07-15 2011-07-12 펄스 레이저 증착장치 및 이를 이용한 증착방법 WO2012008729A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/810,023 US20130180960A1 (en) 2010-07-15 2011-07-12 Pulsed laser deposition apparatus and deposition method using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0068617 2010-07-15
KR1020100068617A KR101219225B1 (ko) 2010-07-15 2010-07-15 펄스 레이저 증착장치

Publications (2)

Publication Number Publication Date
WO2012008729A2 WO2012008729A2 (ko) 2012-01-19
WO2012008729A3 true WO2012008729A3 (ko) 2012-05-03

Family

ID=45469908

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005098 WO2012008729A2 (ko) 2010-07-15 2011-07-12 펄스 레이저 증착장치 및 이를 이용한 증착방법

Country Status (3)

Country Link
US (1) US20130180960A1 (ko)
KR (1) KR101219225B1 (ko)
WO (1) WO2012008729A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102103247B1 (ko) 2012-12-21 2020-04-23 삼성디스플레이 주식회사 증착 장치
KR101410238B1 (ko) * 2013-03-11 2014-06-20 국립대학법인 울산과학기술대학교 산학협력단 펄스 레이저 증착 방법
US20150030759A1 (en) * 2013-07-29 2015-01-29 Xiaojun Zhang Multi-plume pulsed laser deposition system for high-throughput fabrication of diverse materials
TWI472635B (zh) * 2013-09-13 2015-02-11 Univ Nat Taiwan 脈衝雷射蒸鍍系統
EP2910664B1 (en) * 2014-02-21 2019-04-03 Solmates B.V. Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device
KR101608473B1 (ko) * 2014-04-11 2016-04-05 울산과학기술원 Dlc 필름 제조방법
US10364489B2 (en) 2016-09-15 2019-07-30 The Regents Of The University Of California Apparatus and methods for deposition of materials on interior surfaces of hollow components
US20230129777A1 (en) * 2021-10-21 2023-04-27 The United States Of America, As Represented By The Secretary Of The Navy Laser Deposition with a Reactive Gas
CN115233165B (zh) * 2022-02-21 2023-11-28 松山湖材料实验室 组合薄膜制备方法及装置

Citations (3)

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JPH06168880A (ja) * 1992-12-01 1994-06-14 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法および装置
JPH1070315A (ja) * 1996-08-26 1998-03-10 Osaka Gas Co Ltd 熱電材料の製造方法
JP2005285964A (ja) * 2004-03-29 2005-10-13 National Institute Of Advanced Industrial & Technology デュエルターゲット同時パルスレーザ蒸着手法による炭化ケイ素のｎ及びｐ型半導体の結晶薄膜の作製方法及び同法で作製した薄膜

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EP0209131B1 (en) * 1985-07-17 1991-12-04 Nec Corporation Optical cvd method with a strong optical intensity used during an initial period and device therefor
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
US7879410B2 (en) * 2004-06-09 2011-02-01 Imra America, Inc. Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
US7608308B2 (en) * 2006-04-17 2009-10-27 Imra America, Inc. P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168880A (ja) * 1992-12-01 1994-06-14 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法および装置
JPH1070315A (ja) * 1996-08-26 1998-03-10 Osaka Gas Co Ltd 熱電材料の製造方法
JP2005285964A (ja) * 2004-03-29 2005-10-13 National Institute Of Advanced Industrial & Technology デュエルターゲット同時パルスレーザ蒸着手法による炭化ケイ素のｎ及びｐ型半導体の結晶薄膜の作製方法及び同法で作製した薄膜

Also Published As

Publication number Publication date
KR101219225B1 (ko) 2013-01-18
WO2012008729A2 (ko) 2012-01-19
KR20120007854A (ko) 2012-01-25
US20130180960A1 (en) 2013-07-18

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