WO2012002710A2 - Dispositif pour éléments optiques - Google Patents
Dispositif pour éléments optiques Download PDFInfo
- Publication number
- WO2012002710A2 WO2012002710A2 PCT/KR2011/004721 KR2011004721W WO2012002710A2 WO 2012002710 A2 WO2012002710 A2 WO 2012002710A2 KR 2011004721 W KR2011004721 W KR 2011004721W WO 2012002710 A2 WO2012002710 A2 WO 2012002710A2
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- WIPO (PCT)
- Prior art keywords
- conductive
- substrate
- optical device
- metal plate
- insulating member
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Definitions
- the present invention relates to an optical device.
- Optical devices refer to devices that generate light by receiving an electrical signal. Such optical devices are used in various fields, and among them, research of optical devices is being actively conducted as the display field grows gradually.
- LEDs light emitting diodes
- Such light emitting diodes generate light by a combination of electrons and holes, which inevitably generate heat in addition to light. If the heat of the light emitting diode is not dissipated, there is a risk of device damage and operation efficiency is lowered.
- the present invention provides an optical device that can easily perform heat dissipation, and can easily connect optical devices in series, in parallel, or in parallel or parallel without a separate wiring layer on a substrate.
- An optical device comprises: a substrate having a conductive region formed in a lattice planar shape through a penetrating insulating member penetrating upper and lower portions; At least one optical element formed in the conductive region of the substrate; At least one conductive wire electrically connecting the substrate and the optical device, and allowing the plurality of optical devices to be connected in series, parallel or parallel with the substrate; And a protective layer formed on the substrate to surround the optical device and the conductive wire.
- the substrate may include a plurality of conductive bulks in which the conductive regions are arranged in a lattice form, and a conductive layer formed on the conductive bulks.
- the optical device may be attached to an upper portion of the conductive region with an adhesive, and may be connected to the neighboring conductive region through the conductive wire.
- the adhesive is composed of a conductive adhesive, it is possible to electrically connect the one electrode and the conductive region.
- the through type insulating member may further include an insulating fixing member covering the conductive bulk on at least one of an upper portion and a lower portion.
- the substrate may further include an integral conductive region coupled to the at least one side of the grid-shaped conductive region by the through-type insulating member.
- a plurality of regions in which the partition wall is partitioned may be partitioned on the substrate, and the optical device and the conductive wire may be formed independently for each of the regions, thereby forming a plurality of packages.
- one of the plurality of conductive regions formed on the substrate may be connected to the anode of the power source, and the other may be connected to the cathode of the power source.
- the method of manufacturing an optical device comprises the steps of providing a metal plate having a plurality of metal plates; Providing a first insulating member to form a first insulating member on an interface of the metal plate; A first laminating step of laminating and attaching the metal plate through the first insulating member; A first cutting step of cutting the metal plate in a direction perpendicular to the lamination direction to form individual substrate members; A conductive member forming step of attaching a conductive member to an upper surface of the first insulating member on the substrate member to electrically connect the metal plates; A second laminating step of laminating and attaching the substrate member through a second insulating member; A second cutting step of forming the substrate by cutting the substrate member in a direction perpendicular to the lamination direction; An optical device attaching step of attaching the optical device to the upper portion of the substrate through an adhesive; And a protective layer forming step of forming a protective layer on the upper portion of the optical device.
- a partition wall forming step of forming a partition wall for accommodating the protective layer may be further performed between the second cutting step and the optical device attaching step.
- the removing of the conductive member may be further performed.
- a step of further attaching an integral metal plate coupled to the insulating member may be performed on at least one side of the substrate.
- the optical device comprises the steps of providing a metal plate having a plurality of metal plates; Forming an insulating member on an interface of the metal plate to laminate the metal plate; Cutting the metal plate in a direction perpendicular to the lamination direction to form individual substrates; An optical device attaching step of attaching the optical device to the upper portion of the substrate through an adhesive; And a protective layer forming step of forming a protective layer on the upper portion of the optical device.
- the metal plate forming step may be to arrange the metal plate to form a grid.
- the providing of the insulating member may further include forming the insulating member on at least one of both surfaces of the metal plate.
- the optical device according to the present invention is composed of a metallic conductive bulk made of a lattice and a through insulating member filling the gap, thereby facilitating heat dissipation of the optical device and facilitating series and / or parallel connection. Can be.
- FIG. 1 is a cross-sectional view of an optical device according to an embodiment of the present invention.
- FIG. 2 is a plan view of an optical device according to an embodiment of the present invention.
- FIG. 3 is a circuit diagram illustrating an electrical connection relationship of FIG. 2.
- FIG. 4 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 5 is a circuit diagram illustrating an electrical connection relationship of FIG. 3.
- FIG. 6 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 7 is a circuit diagram illustrating the electrical connection relationship of FIG. 6.
- FIG. 8 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 9 is a circuit diagram illustrating the electrical connection relationship of FIG. 8.
- FIG. 10 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 11 is a circuit diagram illustrating the electrical connection relationship of FIG. 10.
- FIG. 12 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 13 is a circuit diagram illustrating the electrical connection relationship of FIG. 12.
- FIG. 14 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 15 is a circuit diagram illustrating the electrical connection relationship of FIG. 14.
- 16 is a flowchart for explaining a method of manufacturing an optical device according to an embodiment of the present invention.
- 17A to 17G illustrate a method of manufacturing an optical device device according to an exemplary embodiment.
- 19A to 19C are views for explaining another method of manufacturing an optical device according to an embodiment of the present invention.
- FIG. 1 is a cross-sectional view of an optical device according to an embodiment of the present invention.
- 2 is a plan view of an optical device according to an embodiment of the present invention.
- 3 is a circuit diagram illustrating an electrical connection relationship of FIG. 2.
- an optical device 100 may include a substrate 110, a plurality of optical devices 120, a conductive wire 130, a partition wall 140, and a protective layer. And 150.
- the substrate 110 has a substantially flat plate shape.
- the substrate 110 includes a plurality of conductive bulks 111, a plurality of through-type insulating members 112, a plurality of fixing members 113, a plurality of terminal layers 115, and a plurality of insulating layers 116.
- the substrate 110 may further include a plurality of conductive layers 114.
- the plurality of conductive bulks 111 are arranged, for example, in at least one row direction and at least one column direction.
- the plurality of conductive bulks 111 may be formed of three rows and three columns, as shown in FIGS. 1 and 2, but the present invention is not limited thereto.
- the conductive bulk 111 may be formed of a metal plate excellent in both electrical conductivity and thermal conductivity.
- the conductive bulk 111 may be formed of any one selected from aluminum, aluminum alloy, copper, copper alloy, iron, iron alloy, and equivalents thereof, but the present invention is not limited thereto. In this manner, the conductive bulk 111 may not only easily transfer an electrical signal to the optical device 120, but also may easily and quickly release heat generated from the optical device 120 to the outside.
- the plurality of through insulation members 112 are interposed between the plurality of conductive bulks 111, and the plurality of conductive bulks 111 are connected to each other to form a single substrate 110.
- the width of the through-hole insulating member 112 is relatively small compared to the width of the conductive bulk 111, the majority of the substrate 110 is made of the conductive bulk 111. Therefore, the heat radiation performance of the optical device device 100 according to the present invention is further improved.
- the through insulating member 112 may be formed by anodizing the conductive bulk 111 or may be a conventional adhesive insulating member, but the present invention may limit the material of the through insulating member 112. no.
- the through insulation member 112 is formed in a substantially lattice shape inside the conductive bulk 111.
- the through insulation member 112 electrically insulates the conductive bulk 111 formed in the lattice. Therefore, the optical devices 120 formed on the conductive bulk 111 are also electrically independent of each other, and may form a necessary series and / or parallel connection configuration through the conductive wires 130.
- the plurality of insulating fixing members 113 may be formed at upper and lower portions of the through insulating member 112, respectively.
- the insulating fixing member 113 may cover some regions of the upper and lower surfaces of the conductive bulk 111 located at outer peripheries of the upper and lower portions of the through-type insulating member 112, respectively.
- the insulating fixing member 113 not only protects the penetration type insulating member 112 that is relatively soft, but also prevents the substrate 110 formed of the plurality of conductive bulks 111 from being bent.
- the insulating fixing member 113 may be formed of any one selected from, for example, poly phthalamide (PPA), an epoxy resin, a photosensitive paste, an equivalent thereof, and a mixture thereof.
- the material of the insulating fixing member 113 is not limited.
- the plurality of conductive layers 114 may be formed on an upper surface of the conductive bulk 111.
- the conductive layer 114 is substantially an area where the optical device 120 is bonded with the conductive adhesive 121 or the conductive wire 130 is bonded.
- the conductive layer 114 is a region reflecting light generated from the optical device 120.
- the conductive layer 114 is gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), tungsten (W), palladium having a relatively excellent electrical conductivity and light reflectivity (Pd) and equivalents thereof, and at least one selected from the group consisting of one or an alloy thereof.
- the conductive layer 114 may be formed of silver (Ag) having excellent electrical conductivity and light reflectivity.
- the conductive layer 114 may be formed to increase the adhesion between the conductive wire 130 and the conductive bulk 111. Therefore, when the conductive bulk 111 is formed of aluminum or an aluminum alloy and the conductive wire 130 is also made of aluminum or an aluminum alloy, the conductive layer 114 may not be provided. However, in this case, the upper surface of the conductive bulk 111 is preferably mirror-treated to increase the light reflectivity to reduce the surface roughness.
- the plurality of terminal layers 115 is formed on the bottom surface of the conductive bulk 111.
- the terminal layer 115 may be formed on the bottom surface of the conductive bulk 111 on the leftmost side and the bottom surface of the conductive bulk 111 on the rightmost side, respectively.
- the terminal layer 115 is an area for allowing the optical device device 100 according to the present invention to be mounted on an external device (eg, a motherboard, a main board, etc.).
- the terminal layer 115 may be formed of at least one selected from copper (Cu), nickel (Ni), gold (Au), palladium (Pd), silver (Ag), and equivalents thereof, or an alloy thereof.
- the terminal layer 115 may be a separate conductive terminal electrically attached to the conductive bulk 111 by a screw or a tape.
- the plurality of insulating layers 116 are formed on the bottom surface of the conductive bulk 111.
- the insulating layer 116 may be formed on the bottom surfaces of the two conductive bulks 111 closest to the center.
- the insulating layer 116 prevents the lower surface of the conductive bulk 111 from being exposed to prevent unnecessary electrical short.
- the insulating layer 116 may be formed of any one selected from a conventional insulating sheet, polyimide, polybenz oxide (PBO) and the like, but the present invention is limited to the material of the insulating layer 116 It is not.
- the heat dissipation plate, the heat dissipation pad, or the heat dissipation fin may be directly attached to the lower surface of the conductive bulk 111 instead of the insulating layer 116, so that the heat dissipation performance may be further improved.
- a separate solder, solder bump or solder ball may be attached to the terminal layer 115 to secure a constant thickness.
- the optical device 120 is attached to an upper surface of at least one conductive bulk 111 of the plurality of substrates 110. That is, the optical device 120 is bonded to the conductive layer 114 on the conductive bulk 111 by the conductive adhesive 121.
- the optical device 120 may be a conventional light emitting diode (LED), and the present invention does not limit the type of the optical device 120.
- the conductive adhesive 121 is eutectic solder (Sn37Pb), high solder (Sn95Pb), lead-free solder (lead-free solder: SnAg, SnAu, SnCu, SnZn, SnZnBi, SnAgCu, SnAgBi, etc.), but may be formed of one of the Ag paste, the present invention is not limited to the material of the conductive adhesive 121.
- FIG. 2 illustrates an optical element array of 3 ⁇ 2
- the present invention is not limited to such an array. That is, the number of rows and columns constituting the optical device 120 may be the same or different from each other, and the positions thereof may be variously changed.
- six optical devices 120 may be provided on the conductive layer 114 on the conductive bulk 111 corresponding to two columns from the left side.
- the optical device 120 is shown as one provided per grid shape formed by the through-type insulating member 120, but does not limit the content of the present invention.
- the conductive wire 130 electrically connects the conductive bulk 111 adjacent to the optical device 120 with each other. That is, one end of the conductive wire 130 may be ball bonded to the optical device 120, and the other end may be stitch bonded to the conductive layer 114 of the conductive bulk 111. It is also possible to configure the reverse. In this way, any one conductive bulk 111 is electrically connected to another adjacent conductive bulk 111 through the optical element 120 and the conductive wire 130. For example, referring to FIG. 2, the conductive wire 130 electrically connects the optical device 120 in the first row and the first column to the conductive layer 114 in the second row and the first column.
- the conductive wire 130 electrically connects the optical device 120 in the second row and the first column to the conductive layer 114 in the third row and the first column. In addition, the conductive wire 130 electrically connects the optical device 120 in the third row and the first column to the conductive layer 114 in the fourth row and the first column.
- the conductive bulk 111 and the optical element 120 of the second column are also connected by the conductive wire 130 in this manner.
- the optical device 100 By the connection structure of the substrate 110 and the conductive wire 130, the optical device 100 according to an embodiment of the present invention, three optical devices along the first column, as shown in FIG. 120 are connected in series, and three optical devices 120 are connected in series along the second column, and the optical devices 120 in two rows are connected in parallel between the anode (+) and the cathode (-). It will have a connected form.
- an additional conductive wire 130 connects the conductive layers 114 in the first row, the first column, and the conductive layers 114 in the first row, the second column, and the fourth row, the first row. It is also possible to connect the conductive layer 114 of the first column and the conductive layer 114 of the fourth row and the second column to each other. In the above configuration, since the positive electrode (+) and the negative electrode (-) of the power source need to be connected only once to the conductive layer 114 of the substrate 110, the connection is easy.
- the partition wall 140 is formed on the substrate 110 to have a predetermined thickness.
- the partition wall 140 serves to define an area of the protective layer 150 to be described below.
- the partition wall 140 is formed in a substantially rectangular line shape, but the present invention is not limited to the shape of the partition wall 140.
- the partition wall 140 may be formed of an epoxy resin having good light reflectivity, a photosensitive barrier rib paste (PSR), or a mixture thereof, and in some cases, may be formed of silicon. However, the present invention does not limit the material of the partition wall 140.
- the protective layer 150 covers both the optical device 120 and the conductive wire 130 on the substrate 110.
- the protective layer 150 protects the optical device 120 and the plurality of conductive wires 130 from an external electrical, physical, mechanical and chemical environment.
- the protective layer 150 may be formed by mixing a conventional fluorescent material with an epoxy resin. The fluorescent material is excited when the visible light or the ultraviolet light generated from the optical device 120 is applied, and is then stabilized to generate visible light. Therefore, the protective layer 150 formed of a fluorescent material may convert the light generated from the optical device 120 into red green blue (RGB) light or white light. Therefore, the optical device device 100 according to an embodiment of the present invention may be used as a backlight unit (BLU) of a liquid crystal display panel. That is, the optical device 100 according to the embodiment of the present invention may be used as a surface light emitting device.
- BLU backlight unit
- FIG. 4 is a plan view of an optical device according to another embodiment of the present invention.
- 5 is a circuit diagram illustrating an electrical connection relationship of FIG. 3.
- the same reference numerals are given to parts having the same configuration and operation as in the previous embodiment, and the following description will focus on differences.
- both electrodes of the optical device 220 are formed thereon. That is, since the electrode is not formed through the lower portion of the optical device 220, the conductive layer 114 on the conductive bulk 111 does not have a direct electrical connection relationship. However, in the optical device 120, two electrodes are connected to the conductive layer 114 through the conductive wires 230 and 231. Each of the conductive wires 230 and 231 is connected to an electrode of the optical device 220.
- the conductive wire 230 connected to the anode of the optical device 220 may be a conductive bulk 111 in which the optical device is located. ) Is connected to the conductive layer 114. In this case, the conductive wire 230 connected to the cathode is connected to the conductive layer 114 on the conductive bulk 111 located in the next row, thereby electrically connecting the optical elements 120 to each other.
- the optical device device 200 differs only in the configuration of the optical device 220 and the conductive wires 230 and 231, and the connection relationship between the optical devices 220. Is the same as the previous embodiment.
- FIG. 6 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 7 is a circuit diagram illustrating the electrical connection relationship of FIG. 6.
- the optical device device 300 according to another embodiment of the present invention is different from the previous embodiments in the connection relationship between the optical devices 120.
- the optical device 120 located in the first row and the first column is connected to the conductive layer 114 in the second column by the conductive wire 330.
- the optical device 120 located in the second row and the first column is connected to the conductive layer 114 in the third column.
- the optical device 120 located in the third row and the first column is connected to the conductive layer 114 located in the third row and the second column through the conductive wire 330.
- the optical elements located in the third row and the second column are connected to the conductive layer 114 formed in the second row and the second column, and also the optical elements located in the second row and the second column ( 120 is connected to the conductive layer 114 located in the first row, second column.
- the optical device 120 has a circuit configuration connected in series with each other, as shown in FIG.
- an additional conductive wire 230 connects the conductive layers 114 in the first row and the first column and the conductive layers 114 in the first and second column to each other.
- a configuration in which the conductive layers 114 in the fourth row and the first column and the conductive layers 114 in the fourth row and the second column are connected to each other is also possible.
- FIG. 8 is a plan view of an optical device according to another embodiment of the present invention.
- 9 is a circuit diagram illustrating the electrical connection relationship of FIG. 8.
- optical device device 400 in an optical device device 400 according to another embodiment of the present invention, four optical devices 120 are arranged in a substantially diamond shape.
- the optical device 120 located in the first row and the second column is connected to the conductive layer 114 located in the second row and the first column through the conductive wire 430.
- the optical device 120 in the second row and the first column is connected to the conductive layer 114 located in the third row and the second column.
- the third row and the second column are connected to the optical device 120 in the second row and the third column through the conductive wires, and again, the optical device 120 in the second row and the third column. Is connected to the conductive layer 114 located in the first row and the second column, and has a configuration connected to each other by circulation.
- optical device device 400 can form an electrical connection as shown in FIG.
- FIG. 10 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 11 is a circuit diagram illustrating the electrical connection relationship of FIG. 10.
- an optical device device 500 may include a substrate 510, an optical device 120, a conductive wire 530, a partition wall 140, and a protective layer ( 150).
- the substrate 510 is formed of a conductive bulk partitioned in a 4 ⁇ 5 array by a through insulating member, and a conductive layer 514 formed on the conductive bulk.
- an insulating fixing member 513 may be further formed along the upper portion of the through-type insulating member.
- the substrate 510 is divided into two regions on the left and right through the partition wall 140, and the optical elements 120 are separated and disposed for each region, so that the two light on the independent substrate 510 is separated.
- An element device package can be formed.
- the substrate 510 may be cut along a line indicated by a dotted line, so that each package may be physically separated.
- the optical device 120 may be arranged such that three series connections form two parallel branches through the connection of the wires 530 as in the previous embodiment in the region within the partition wall 140 on the left side.
- the optical device 120 may configure six series connections through the connection of the wires 531. Therefore, the connection of the optical device 120 can be understood as the same circuit as FIG.
- an additional conductive wire 530 connects the conductive layers 514 of the first row and the first column and the conductive layers 514 of the first row and the second column to each other,
- the conductive layer 514 of the fourth row, the first column and the conductive layer 514 of the fourth row, the second column may also be connected to each other.
- FIG. 12 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 13 is a circuit diagram illustrating the electrical connection relationship of FIG. 12.
- an optical device device 600 may include a substrate 610, an optical device 120, a conductive wire 630, a partition wall 140, and a protective layer ( 150).
- the substrate 610 is formed of a single first row, three separate second and third rows, and a single fourth row by a through insulating member and an insulating fixing member 613 disposed thereon. It can be formed to have.
- each optical device 120 is connected to the conductive plate 614 of the second row through the conductive wire 630, respectively.
- each optical device 120 located in the second row is again connected to each conductive plate 614 located in the third row, and each optical device 120 located in the third row is again a single unit located in the fourth row. It is connected to the conductive plate 614.
- the optical device 120 may be understood as a configuration in which three connected in series form three parallel branches, as shown in FIG. 13.
- FIG. 14 is a plan view of an optical device according to another embodiment of the present invention.
- FIG. 15 is a circuit diagram illustrating the electrical connection relationship of FIG. 14.
- an optical device device 700 may include a substrate 710, an optical device 120, a conductive wire 730, a partition wall 140, and a protective layer ( 150).
- the substrate 710 is formed of a single first column, three separate second and third columns, and a single fourth row by a through insulating member and an insulating fixing member 713 positioned thereon. It can be formed to have.
- the first column of the substrate 710 is connected to the conductive plate 714 located in the first row and the second column through the conductive wire 730.
- the optical device 120 located in the first row and the second column is connected to the conductive plate 714 in the first row and the third column, and the optical device 120 in the region is again connected to the second through the conductive wire 730.
- the row is connected to the third column.
- the six optical devices 120 positioned on the substrate 610 are connected in series with each other.
- the optical device 120 may be understood as having a configuration in which six connected in series form three parallel branches.
- 16 is a flowchart for explaining a method of manufacturing an optical device according to an embodiment of the present invention.
- 17A to 17G illustrate a method of manufacturing an optical device device according to an exemplary embodiment.
- an optical device 100 may first include a conductive plate preparing step S11, a first insulating member forming step S12, a first laminating step S13, and a first laminating step S13.
- the substrate 110 may be formed through the cutting step S14, the conductive member forming step S15, the second insulating member forming step S16, the second laminating step S17, and the second cutting step S18. .
- the optical device device 100 having the final structure is formed through the barrier rib forming step S19, the optical device attaching step S20, the wire bonding step S21, and the protective layer forming step S22 after the above step. Can be.
- the providing of the metal plate (S11) is a step of providing a plurality of metal plates 10 formed in a plate shape.
- the metal plate 10 is shown in three, but is not limited to the number.
- the metal plate 10 may be made of any one selected from aluminum, aluminum alloy, copper, copper alloy, iron, and iron alloy.
- the metal plate 10 may then be anodized to increase the adhesion between the adhesive insulating member and the insulation and the voltage resistance between the metal plates 10.
- the metal plate 10 may be provided with a surface roughness by sand blasting, chemical etching, grinding, or polishing the interface to increase adhesion to the adhesive insulating member.
- Each metal plate 10 is located side by side in the vertical direction, and then constitutes each region of the substrate.
- the first insulating member forming step (S12) is a step of providing an adhesive insulating member 20 on an interface between the metal plates 10.
- the adhesive insulating member 20 may be formed at an interface after the metal plate 10 performs anodizing.
- the adhesive insulating member 20 couples the metal plate 10 to allow the metal plates 10 to be electrically independent of each other.
- the adhesive insulating member 10 may be formed of an adhesive in a liquid form or a film in a sheet form.
- the adhesive insulating member 10 then constitutes the through-type insulating member 112 of the substrate 110.
- the first laminating step S13 is a step of stacking the metal plate 10 via the insulating member 20.
- the adhesive insulating member 20 between the metal plates 10 provides adhesion and electrical insulation between the metal plates 10.
- the first cutting step S14 is a step of cutting the laminating of the metal plate 10 and the insulating member 20 in a direction perpendicular to the stacking direction.
- the substrate member 30 having three columns (or rows) is formed. Therefore, the substrate member 30 includes the components 10 'and 20' corresponding to the metal plate 10 and the insulating member 20 on a plane through cutting.
- the conductive member forming step (S15) is a step of connecting the metal plate 10 ′ of the substrate member 30 through the conductive member 40.
- the conductive member forming step 40 is formed between the metal plate 10 'through an upper surface of the insulating member 20', and as a result, the metal plate 10 'may be electrically connected to each other.
- the second insulating member forming step (S16) is a step of forming the insulating member 50 between the substrate members 30.
- the insulating member 50 may be made the same as the insulating member 20 in the previous step.
- the insulating member 50 may be formed after anodizing (anode oxidation) is first performed on the surface of the substrate member 30. Since the metal plate 10 'is connected, current may flow in the metal plate 10', and as a result, an insulating layer may be formed on the surface of the substrate member 30 through anodizing.
- the second laminating step S18 is a step of stacking the substrate members 30 in the vertical direction again.
- the insulating member 50 may provide adhesiveness and insulation between the substrate members 30 at the time of laminating.
- the second cutting step S19 is a step of cutting the laminating of the substrate member 30 in a direction perpendicular to the stacking direction (dotted line).
- the substrate member 30 may form the substrate 110 of the optical device device 100 according to the exemplary embodiment of the present invention through the cutting. In this case, however, after the conductive member 40 is removed, subsequent steps should be performed.
- the conductive plate 114 may be formed on the conductive bulk 111 corresponding to the metal plate 10 of the substrate 110.
- the conductive plate 114 may be formed of gold, silver, copper, aluminum, nickel, tungsten, palladium, and combinations thereof having excellent electrical conductivity and excellent electrical contact properties.
- the conductive plate 114 may be formed through any one or a combination of electroless plating, electrolytic plating, paste, spray (plasma arc spray, cold spray), and ink printing.
- the partition wall forming step S20 is a step of forming the partition wall 140 on the conductive layer 114.
- the partition wall 140 protrudes from the upper surface of the conductive layer 114 in the vertical direction, respectively.
- the partition wall 140 may be formed at a predetermined angle from the upper surface of the conductive layer 114, and may function as a reflective layer.
- the partition wall 140 may be formed using a screen printing method or a mold method, and the material may be polyphthalamide (PPA), epoxy resin, photosensitive partition paste (PSR), or a mixture thereof. Or may be formed using silicon.
- the optical device attaching step (S21) may include attaching a plurality of optical devices 120 to the substrate 110 on an area provided in rows and columns, that is, in a lattice form. to be.
- the optical device 120 may be a light emitting diode (LED) as described above.
- the optical device 120 may be attached to various areas of the substrate 110 through a conductive adhesive (not shown) on the bottom surface.
- the wire bonding step S22 connects the optical device 120 and the conductive layer 114 using the conductive wire 130.
- the optical device 120 has a connection structure in series, parallel or serially parallel.
- the external signal transmitted to the conductive layer 114 is transmitted to the optical device 120 through the conductive wire 130, thereby controlling the light emission of the optical device 120.
- the protective layer forming step (S23) is a step of forming a protective layer 150 by applying a fluorescent material to a region partitioned by the partition wall 140.
- the protective layer 150 is formed on the substrate 110 to surround the optical device 120 and the conductive wire 130.
- the protective layer 150 protects the optical device 120 and the like from external physical, mechanical, electrical and chemical shocks.
- the protective layer 150 may convert the light generated by the optical device 120 into white light.
- 18 is a flowchart for explaining another method of manufacturing the optical device according to the embodiment of the present invention.
- 19A to 19C are views for explaining another method of manufacturing an optical device according to an embodiment of the present invention.
- another method of manufacturing an optical device may include providing a metal plate (S11), an insulating member forming step (S12), a cutting step (S13), a partition wall forming step (S14), An optical device attaching step S15, a wire bonding step S16, and a protective layer forming step S17 may be included.
- a metal plate S11
- an insulating member forming step S12
- a cutting step S13
- An optical device attaching step S15, a wire bonding step S16, and a protective layer forming step S17 may be included.
- the metal plate providing step S11 is provided with a plurality of metal plates 10 ′ having a shape of 3 ⁇ 3.
- the metal plate 10 ′ may be made of any one selected from aluminum, aluminum alloy, copper, copper alloy, iron, and iron alloy.
- the insulating member forming step (S12) is a step of forming the insulating member 20 ′ between the metal plates 10 ′.
- the insulating member 20 ' provides adhesiveness and insulation between the metal plates 10'.
- the insulating member 20 ′ is not necessarily formed on all surfaces of the metal plate 10 ′, but may be formed on any one of two surfaces to which the metal plate 10 ′ abuts.
- the cutting step S13 is a step of cutting the metal plate 10 ′ and the insulating member 20 ′ perpendicular to the stacking direction.
- the substrate 110 of the optical device 100 may be formed, and the insulating fixing member 113 and the conductive plate 114 may be further formed. have.
- the barrier rib forming step (S14), the optical device attaching step (S15), the wire bonding step (S16), and the protective layer forming step (S17) include the barrier rib forming step (S20) to the protective layer forming step (S23). Since it is the same, the following description will be omitted.
- the optical device device 600 in the state in which the substrate 110 used in the optical device device 100 of one embodiment is formed through the above-described steps, And a conductive bulk formed in a single row at the bottom.
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Abstract
La présente invention concerne un dispositif pour éléments optiques qui permet de coupler facilement des éléments optiques en série, en parallèle ou en série/parallèle sans ajouter de couche de câblage supplémentaire sur un substrat. Le dispositif pour éléments optiques peut par exemple comprendre : un substrat dans lequel une région conductrice se présente sous la forme d'un plan en treillis à travers un élément d'isolation de type à pénétration pénétrant dans les parties supérieures et inférieures ; au moins un élément optique formé sur la région conductrice du substrat ; au moins un fil conducteur qui couple électriquement le substrat aux éléments optiques et permet de coupler le substrat et les éléments optiques en série, en parallèle ou en série/parallèle ; et une couche de protection formée sur une partie supérieure du substrat de façon à recouvrir les éléments optiques et les fils conducteurs.
Applications Claiming Priority (2)
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KR10-2010-0063179 | 2010-06-30 | ||
KR1020100063179A KR101198849B1 (ko) | 2010-06-30 | 2010-06-30 | 광소자 디바이스 |
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WO2012002710A2 true WO2012002710A2 (fr) | 2012-01-05 |
WO2012002710A3 WO2012002710A3 (fr) | 2012-04-12 |
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PCT/KR2011/004721 WO2012002710A2 (fr) | 2010-06-30 | 2011-06-28 | Dispositif pour éléments optiques |
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WO (1) | WO2012002710A2 (fr) |
Cited By (2)
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CN102738136A (zh) * | 2012-06-20 | 2012-10-17 | 深圳市九洲光电科技有限公司 | 分布式高压led模组 |
WO2015148446A1 (fr) * | 2014-03-24 | 2015-10-01 | Cree, Inc. | Packs électroluminescents de tensions multiples, systèmes, et procédés associés |
Families Citing this family (3)
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KR101523664B1 (ko) * | 2013-06-11 | 2015-05-29 | 주식회사 세미콘라이트 | 금속 기판 제조 방법 및 이 방법으로 제조된 금속 기판을 포함하는 반도체 발광소자 |
US9653664B2 (en) | 2015-06-29 | 2017-05-16 | Point Engineering Co., Ltd. | Chip substrate comprising a groove portion and chip package using the chip substrate |
KR102027041B1 (ko) * | 2017-12-08 | 2019-09-30 | 김홍섭 | 납땜패턴을 이용한 회로기판의 방열장치 |
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JP2004014996A (ja) * | 2002-06-11 | 2004-01-15 | Sanyo Electric Co Ltd | 光半導体素子 |
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WO2015148446A1 (fr) * | 2014-03-24 | 2015-10-01 | Cree, Inc. | Packs électroluminescents de tensions multiples, systèmes, et procédés associés |
US10234119B2 (en) | 2014-03-24 | 2019-03-19 | Cree, Inc. | Multiple voltage light emitter packages, systems, and related methods |
Also Published As
Publication number | Publication date |
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KR20120002351A (ko) | 2012-01-05 |
WO2012002710A3 (fr) | 2012-04-12 |
KR101198849B1 (ko) | 2012-11-07 |
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