WO2012002666A3 - Appareil et procédé pour fabriquer du graphène - Google Patents
Appareil et procédé pour fabriquer du graphène Download PDFInfo
- Publication number
- WO2012002666A3 WO2012002666A3 PCT/KR2011/004524 KR2011004524W WO2012002666A3 WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3 KR 2011004524 W KR2011004524 W KR 2011004524W WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- deposition chamber
- manufacturing apparatus
- temperature
- heating unit
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180032694.1A CN102958832B (zh) | 2010-06-28 | 2011-06-22 | 石墨烯制造设备及方法 |
US13/807,360 US20130122220A1 (en) | 2010-06-28 | 2011-06-22 | Graphene manufacturing apparatus and method |
US14/831,031 US20150353362A1 (en) | 2010-06-28 | 2015-08-20 | Graphene manufacturing apparatus and method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100061274 | 2010-06-28 | ||
KR10-2010-0061274 | 2010-06-28 | ||
KR1020110026455A KR101828528B1 (ko) | 2010-06-28 | 2011-03-24 | 그래핀의 제조 장치 및 제조 방법 |
KR10-2011-0026455 | 2011-03-24 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/807,360 A-371-Of-International US20130122220A1 (en) | 2010-06-28 | 2011-06-22 | Graphene manufacturing apparatus and method |
US14/831,031 Division US20150353362A1 (en) | 2010-06-28 | 2015-08-20 | Graphene manufacturing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012002666A2 WO2012002666A2 (fr) | 2012-01-05 |
WO2012002666A3 true WO2012002666A3 (fr) | 2012-05-31 |
Family
ID=45402522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/004524 WO2012002666A2 (fr) | 2010-06-28 | 2011-06-22 | Appareil et procédé pour fabriquer du graphène |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2012002666A2 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102583340B (zh) * | 2012-01-20 | 2013-09-18 | 中国科学院上海硅酸盐研究所 | 低温气相还原的高导电石墨烯材料及其制备方法 |
TWI457277B (zh) * | 2012-08-10 | 2014-10-21 | Nat Univ Tsing Hua | 石墨烯製備系統及方法 |
US9431487B2 (en) | 2013-01-11 | 2016-08-30 | International Business Machines Corporation | Graphene layer transfer |
EP3894353A1 (fr) * | 2019-03-18 | 2021-10-20 | The 280 Company | Système et procédé de fabrication d'une couche de graphène sur un substrat |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
US20090110627A1 (en) * | 2007-10-29 | 2009-04-30 | Samsung Electronics Co., Ltd. | Graphene sheet and method of preparing the same |
US20090155561A1 (en) * | 2007-12-17 | 2009-06-18 | Samsung Electronics Co., Ltd. | Single crystalline graphene sheet and process of preparing the same |
US20090324897A1 (en) * | 2007-09-18 | 2009-12-31 | Samsung Electronics Co., Ltd. | Graphene pattern and process of preparing the same |
-
2011
- 2011-06-22 WO PCT/KR2011/004524 patent/WO2012002666A2/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
US20090324897A1 (en) * | 2007-09-18 | 2009-12-31 | Samsung Electronics Co., Ltd. | Graphene pattern and process of preparing the same |
US20090110627A1 (en) * | 2007-10-29 | 2009-04-30 | Samsung Electronics Co., Ltd. | Graphene sheet and method of preparing the same |
US20090155561A1 (en) * | 2007-12-17 | 2009-06-18 | Samsung Electronics Co., Ltd. | Single crystalline graphene sheet and process of preparing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2012002666A2 (fr) | 2012-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010045538A3 (fr) | Procédés et appareil de commande de chaleur rapidement réactifs dans des dispositifs de traitement par plasma | |
WO2012008789A3 (fr) | Procédé de fabrication de graphène à une basse température, procédé de transfert direct de graphène à l'aide de celui-ci et feuille de graphène | |
WO2013016191A3 (fr) | Procédés et appareil destinés au dépôt de matériaux sur un substrat | |
WO2011094143A3 (fr) | Appareil de contrôle de l'uniformité de la température d'un diffuseur de fluide de type pomme de douche | |
WO2012150763A3 (fr) | Procédé de production de graphène de haute qualité à l'aide d'un procédé de dépôt chimique en phase vapeur à traitement thermique continu | |
WO2012118947A3 (fr) | Appareil et procédé de dépôt de couches atomiques | |
WO2008078503A1 (fr) | Appareil de formation de film et procédé de formation de film | |
WO2012071163A3 (fr) | Maque dur amovible en composite | |
WO2012125275A3 (fr) | Appareil de surveillance et de commande d'une température de substrat | |
WO2014110446A3 (fr) | Procédé et système de formation de graphène | |
JP2011071498A5 (ja) | 半導体装置の作製方法 | |
WO2011156749A3 (fr) | Dépôt de graphène | |
JP2010161350A5 (ja) | 半導体装置の製造方法及び基板処理装置 | |
WO2012078564A3 (fr) | Procédé permettant de transférer de la chaleur ou de modifier un tube dans un échangeur de chaleur | |
WO2012170511A3 (fr) | Procédés de nettoyage d'une surface d'un substrat à l'aide d'une chambre de dépôt chimique en phase vapeur par filament chaud (hwcvd) | |
WO2011100722A3 (fr) | Induction pour processus thermochimiques, ainsi que systèmes et procédés correspondants | |
WO2007122203A3 (fr) | Appareil d'évaporation thermique, utilisation de ce dernier et procédé de dépôt d'une matière | |
WO2012002666A3 (fr) | Appareil et procédé pour fabriquer du graphène | |
WO2005113854A3 (fr) | Appareil et procédé de réalisation de nanostructures par chauffage inductif | |
WO2012134070A3 (fr) | Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil | |
WO2014018036A3 (fr) | Appareil et procédé de fonctionnement d'un injecteur pour un appareil de post-traitement de gaz d'échappement | |
WO2011090260A3 (fr) | Dispositif pour la fabrication continue de charbon actif | |
WO2012112334A3 (fr) | Procédé d'utilisation d'un système de dépôt chimique en phase vapeur assisté par filament | |
JP2011166060A5 (ja) | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム | |
JP2012222157A5 (fr) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180032694.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11801073 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13807360 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11801073 Country of ref document: EP Kind code of ref document: A2 |