WO2011162813A1 - Cible bimétallique - Google Patents

Cible bimétallique Download PDF

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Publication number
WO2011162813A1
WO2011162813A1 PCT/US2011/001115 US2011001115W WO2011162813A1 WO 2011162813 A1 WO2011162813 A1 WO 2011162813A1 US 2011001115 W US2011001115 W US 2011001115W WO 2011162813 A1 WO2011162813 A1 WO 2011162813A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
metal
inserts
bimetallic
apertures
Prior art date
Application number
PCT/US2011/001115
Other languages
English (en)
Inventor
Eugene Y. Ivanov
Eduardo Del-Rio
Original Assignee
Tosoh Smd, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Smd, Inc. filed Critical Tosoh Smd, Inc.
Publication of WO2011162813A1 publication Critical patent/WO2011162813A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials

Definitions

  • the present invention relates to sputter targets, and more particularly, to bimetallic rotary targets used in sputter deposition.
  • Sputter coating is typically known as an electric discharge type process which is conducted in a vacuum chamber in the presence of at least one gas.
  • a sputtering apparatus includes a vacuum chamber, a power source, an anode, and one or more cathode targets which include a material used to deposit a layer of metal onto a substrate.
  • cathode targets which include a material used to deposit a layer of metal onto a substrate.
  • an electrical potential is applied to the cathode target, the gases adjacent to the surface of the target forms a plasma which bombards the target causing particles of the material from the target to become displaced, ejected, or sputtered from the target.
  • This material, which has become sputtered from the target typically contacts a substrate, thereby becoming deposited on the substrate.
  • a coating, or layer on the substrate.
  • a sputtering process is conducted in the presence of a gas that is reactive with the target material, the byproduct of the target material and the reactive gas forms on the substrate so as to form a coating different than the original target material.
  • sputtering targets may be used in this coating process (e.g., planar targets, rotational cylindrical targets, etc.).
  • Magnetron type sputtering is one such example of a sputtering which is commonly used in the art.
  • Cylindrical magnetron sputtering wherein the substrate is located within a cylindrical target, is particularly suited for coating three-dimensional complex objects, such as those used for cutting tools, biomedical de-ices, optical fibers, and so on.
  • Cylindrical magnetron sputtering devices are well known to those of ordinary skill in the art.
  • FIG. 1 illustrates an embodiment of a conventional magnetron sputtering apparatus.
  • the apparatus includes metallic walls 1 of a vacuum chamber 2 in which a sputtering process is performed.
  • a cylindrical rotary target 3 is supported by supports 5 located at each end of the rotary target 3 so that the target is rotatable about an axis 7.
  • Gas is supplied into the sputtering chamber via a gas supply 8, and the chamber is evacuated to a pressure less than atmospheric via at least one vacuum pump 10.
  • a substrate 9, such as a glass substrate for example, is moved beneath the target 3 via rollers or the like (not shown) as the rotary target 3 rotates.
  • a plasma is generated within the vacuum chamber 2 by applying a voltage from a power supply 12 to the sputtering target 3 which has a negative charge relative to the walls 1 or the like which may be grounded.
  • the plasma is positioned adjacent a sputtering zone of the target.
  • the sputtering zone on the target can be controlled by way of at least one magnet 4 located within the rotary target 3 or at any other suitable location.
  • the disunited particles contact the upper surface of the substrate 9, wherein continuous operation of this process generates a layer, or coating, or material on the surface of the substrate 9.
  • a bimetallic rotary target in one aspect of the present invention, includes a cylindrical target tube formed of a first metal.
  • the target tube has a first distal end, an opposing second distal end, an outer surface extending between the first and second distal ends, and a central axis extending normal to the first and second distal ends.
  • the bimetallic rotary target also includes a plurality of apertures formed through the outer surface of the target tube.
  • the bimetallic rotary target further includes a plurality of inserts formed of a second metal that is different than the first metal.
  • One of the plurality of inserts is disposed within each of the plurality of said apertures, wherein each of the inserts includes a locking mechanism projecting therefrom. The locking mechanism contacts the aperture to secure the insert therewithin.
  • a method for producing a bimetallic rotary target includes providing a cylindrical target tube formed of a first metal.
  • the target tube has a first distal end, an opposing second distal end, an outer surface extending between said first and second distal ends, and a central axis extending normal to the first and second distal ends.
  • the method further includes forming a plurality of apertures through the outer surface of the target tube.
  • the method also including disposing an insert into each of the plurality of apertures.
  • the inserts are formed of a second metal that is different than the first metal.
  • Each of the inserts includes a locking mechanism projecting therefrom.
  • the method also includes integrally attaching the inserts to the target tube.
  • FIG. 1 is a schematic diagram of a sputtering apparatus commonly known in the art
  • FIG. 2 is a perspective view of an embodiment of a rotary target
  • FIG. 3 is an end view of another embodiment of a rotary target
  • FIG. 4 is a splayed view of the rotary target shown in FIG. 2;
  • FIG. 5 is a perspective view of another embodiment of a rotary target
  • FIG. 6 is a splayed view of the rotary target shown in FIG. 5;
  • FIG. 7 is a perspective view of yet another embodiment of a rotary target;
  • FIG. 8 is a splayed view of the rotary target shown in FIG. 7;
  • FIG. 9 is a perspective view of a further embodiment of a rotary target
  • FIG. 10 is a splayed view of the rotary target shown in FIG. 9;
  • FIG. 1 1 is a splayed view of an embodiment of a target tube
  • FIG. 12 is an embodiment of a cutting pattern of grooves of the target tube shown in FIG. 1 1 ;
  • FIG. 13 is a side view of an embodiment of an insert
  • FIG. 14 is a cross-sectional view of a portion of a target tube having an aperture formed therein;
  • FIG. 1 5 is a side view of an embodiment of a cylindrical insert
  • FIG. 16 is a side view of another embodiment of a cylindrical insert
  • FIG. 17 is a side view of yet another embodiment of a cylindrical insert.
  • the rotary target 20 is an elongated, substantially cylindrical member having a substantially circular cross-sectional shape.
  • the rotary target 20 includes a first distal end 22 and an opposing second distal end 24.
  • the first and second distal ends 22, 24 are substantially planar.
  • the first and second distal ends 22, 24 have a step-like configuration to be received by the end supports 5 (FIG. 1 ). It should be understood by one of ordinary skill in the art that the first and second distal ends 22, 24 can be configured in any manner sufficient to be received by the end supports 5 for rotation about a central axis 26.
  • the rotary target 20 is formed as a cylindrical tube having concentric layers.
  • the rotary target 20 includes a backing tube 28, a target tube 30, and at least one insert 32 operatively connected to the target tube 30.
  • the backing tube 28 can be formed of any material sufficient to provide support to the target tube 30 while substantially un-reactive or inert during a sputtering process.
  • the rotary target 20 is formed without a backing tube 28, as shown in FIG. 2.
  • the target tube 30 is formed of a first metal and the at least one insert 32 is formed of a second metal that is different from the first metal of the target tube 30. Any number of inserts 32 can be used to form the pattern of the second metal about the central axis 26.
  • FIGS. 2 and 4 illustrate a continuous spiral pattern about the central axis, and it should be understood by one of ordinary skill in art that any number of inserts 32 can be used to form the spiral pattern.
  • the spiral pattern of inserts 32 form an angle ⁇ relative to the central axis 26.
  • the angle ⁇ is about 45°, but it should be understood by one of ordinary skill in the art that the angle ⁇ of the alignment of the inserts 32 relative to the central axis 26 may be greater than 0° and less than 180°.
  • a single insert 32 is operatively attached to the target tube 30 to form the spiral pattern.
  • a plurality of inserts 32 are positioned immediately adjacent to each other to form the spiral pattern on the target tube 30.
  • the width W of the inserts 32 is substantially the same. In another embodiment, the width W of the inserts 32 varies depending upon desired metal ratios in the rotary target 20. It should be understood by one of ordinary skill in the art that the inserts 32 can be formed having any width W sufficient to produce a desired sputtering deposition composition.
  • the distance between adjacent rings of the insert 32 is substantially the same along the entire longitudinal length of the rotary target 20. By maintaining a consistent spacing of the secondary metal, the resulting deposited layer should be substantially consistent in both thickness as well as composition.
  • the backing tube 28 and the target tube 30 are concentrically aligned.
  • the backing tube 28 and the target tube 30 are fixedly attached to each other.
  • the target tube 30 is releasably attached to the backing tube 28 such that, for example, when the target tube 30 is spent or no longer providing sufficient deposition quality, the target tube 30 can be easily removed from the backing tube 28.
  • the radially inner surface of the backing tube 28 has a first radius R
  • the radially outward surface of the backing tube 28 has a second radius R 2 .
  • the radially inner surface of the target tube 30 has a first radius R 2 , and the radially outward surface 38 (FIG.
  • the radii Rj, R 2 , R 3 as well as the length L of the rotary target 20 can be any dimensions sufficient for the rotary target 20 to be used in any conventional sputtering system.
  • the target tube 30 is formed of a homogeneous metal or a metal alloy.
  • the target tube 30 is formed of the primary target material to be deposited on a substrate, whereas the inserts 32 are formed of a secondary target material or doping target material to be deposited with the primary target material.
  • the target tube 30 and inserts 32 may be formed of tungsten (W), tantalum (Ta), tellurium (Te), copper (Cu), molybdenum (Mo), indium (In), gallium (Ga), aluminum (Al), vanadium (V), niobium (Nb), chromium (Cr), or any other metal or an alloy of any combination of metals for use in sputter deposition, provided the target tube 30 and inserts 32 are formed of different materials to form a bimetallic rotary target 20.
  • the inserts 32 are attached to the target tube 30 in a spiral-like orientation, wherein the spiral is non-continuous.
  • the non-continuous spiral pattern is formed by integrally attaching a plurality of inserts 32 to the target tube 30, wherein each insert is spaced- apart from each other in both the longitudinal as well as the radial manner.
  • the inserts 32 are located within a plurality of aligned apertures 36 (FIG. 14) forming a spiral-shaped pattern about the central axis 26.
  • Each of the inserts 32 is formed as a plug that is insertable into the apertures 36 and subsequently integrally attached to the target tube 30.
  • the inserts 32 have a substantially circular cross-sectional shape.
  • the inserts 32 have a square, rectangular, or triangular cross-sectional shape, but the inserts 32 may have any cross- sectional shape, provided each of the inserts 32 has the same shape.
  • the dimensions of each of the inserts 32 may be the same or vary between inserts 32.
  • the inserts 32 are spaced both radially and longitudinally from each other, thereby forming the spiral pattern or other pre-determined pattern about the central axis 26.
  • the inserts 32 are located within a plurality of aligned apertures forming a plurality of rings about the central axis 26.
  • Each of the inserts 32 is formed and shaped similar to the inserts 32 described above with respect to the embodiment shown in FIGS. 7-8.
  • the rotary target 20 is formed with or without a backing tube 28.
  • the target tube 30 can be any cylindrical target for sputtering commonly known in the art formed in any conventional manner.
  • a plurality of grooves 34 are cut into the outer surface of the target tube 30, and the inserts 32 are received within each groove 34, as shown in FIGS. 1 1 -13.
  • the grooves 34 are formed tangentially to the target tube 30, and the depth that the groove extends 34 radially inward varies from one end of the groove 34 to the opposing end.
  • the overall shape of the grooves 34 is in the form of a truncated circle.
  • the size and shape of the inserts 32 correspond to the size and shape of the
  • the width of the inserts 32 is substantially the same as the width of the corresponding groove 34.
  • the grooves 34 can be cut in an orientation substantially perpendicular to the central axis 26 or at an angle relative thereto, as explained above.
  • the grooves 34 are cut into the target tube 30 sequentially in an aligned manner such that a substantially spiral-shaped pattern is formed along the length L of the target tube 30 about the central axis 26.
  • the groove 34 formed into the target tube 30 in the embodiment illustrated in FIGS. 5-6 is a non- continuous groove 34, as shown in FIG. 1 1 .
  • the grooves 34 can be cut into the target tube 34 by way of a saw, a laser, or any other conventional means of cutting a groove into a rotary target 20.
  • apertures 36 are formed through the outer surface 38 of the target tube 30.
  • the apertures 36 are formed by drilling.
  • the apertures 36 are formed using a CNC machine.
  • the apertures 36 are formed using laser cutting. It should be understood by one of ordinary skill in the art that the apertures 36 can be formed in any conventional manner.
  • the apertures 36 shown in the embodiment illustrated in FIG. 14 are cylindrical, having a substantially circular cross-sectional shape, but it should be understood by one of ordinary skill in the art that the shape of the apertures 36 can be formed as any shape.
  • an aperture 36 is formed into the target tube 30 through the outer surface 38 thereof.
  • the aperture 36 has a width Si and a depth S 2 .
  • the width Si is about 5.08 mm wide and the depth S 2 is about 7 mm deep extending from the outer surface 38. It should be understood by one of ordinary skill in the art that the width and depth of the apertures 36 may vary depending on the overall dimensions of the rotary target 20, and the apertures 36 can be any dimensions relative to the target tube 30 to produce a desired sputter deposition composition.
  • FIGS. 15- 17 illustrate exemplary embodiments of inserts 32 that are receivable in an aperture 36 formed into the target tube 30.
  • Each of the illustrated embodiments of the insert 32 includes a locking mechanism 40 that operatively attaches the insert 32 to a corresponding aperture 36 when the insert 32 is received in the aperture 36.
  • the insert 32 includes a first surface 42 that is substantially vertical and a second surface 44 extending from and formed at an angle relative to the first surface 42, thereby forming the locking mechanism 40.
  • the second surface 44 is oriented at an angle of about 45° relative to the first surface 42. In other embodiments, the second surface 44 can be formed at an angle of between about 1 ° and about 89° degrees relative to the first surface 42.
  • the locking mechanism 40 extends downwardly from the upper surface 48 of the insert 32 about 0.50 mm. It should be understood by one of ordinary skill in the art that the angle at which the second surface 44 is oriented with respect to the first surface 42 and the distance at which the second surface 44 extends at an angle from the upper surface 48 can be any angle or distance sufficient to allow the inserts 32 to still fit within a corresponding aperture 36 in the target tube 30 while substantially filling the void of the aperture 36
  • the insert 32 includes a first surface 42 that is substantially vertical and a second surface 44 extending from the first surface 42, thereby forming the locking mechanism 40.
  • the second surface 44 is a rounded protrusion that forms a bump or protrusion that extends laterally from the vertically oriented first surface 42.
  • the protrusion formed by the second surface 44 is spaced apart from the upper surface 46 of the insert 32.
  • the insert 32 includes a first surface 42 that is substantially vertical and a second surface 44 extending from the first surface 42, thereby forming the locking mechanism 40.
  • the second surface 44 is a rounded protrusion that forms a bump or protrusion that extends laterally from the vertically oriented first surface 42.
  • the protrusion formed by the second surface 44 is immediately adjacent to the upper surface 46.
  • the width Lj of the insert 32 between the opposing first surfaces 42 is slightly smaller than the width Si of the aperture 36 into which the insert 32 is being received.
  • the width L 2 of the locking mechanism 40 is sized such that it is substantially the same size as the width Si of the aperture 36 into which the insert 32 is being received.
  • the height L 3 of the insert 32 extending from the upper surface 48 is substantially the same as the depth S 2 of the aperture 36.
  • the locking mechanism 40 is configured to secure the insert 32 within the aperture 36 when disposed therewithin by way of a friction fit or press fit.
  • the dimensions of the insert 32 and the locking mechanism 40 can be slightly larger or slightly smaller than the aperture 36 into which it is disposed. While the locking mechanism 40 is described above with respect to the inserts 36 formed as plugs insertable into apertures 36, the same locking mechanism 40 design can also be utilized for the inserts 32 positionable within grooves 34.
  • Assembly of the rotary target 20 involves forming the grooves 34 or apertures 36 into the target tube 30.
  • the inserts 32 are then positioned within corresponding grooves 34 or apertures 36 of the target tube 30.
  • the inserts 32 should form a snug or friction fit within the corresponding groove 34 or aperture 36 by way of contact between the locking mechanism 40 and the surfaces defining the groove 34 or the aperture 36.
  • the target tube 30 and inserts 32 are then subjected to hot isostatic pressing (HIPing), cold isostatic pressing (CIPing), electron beam welding, ultrasonic welding, sintering, friction fitting, or any other manufacturing method of integrally attaching the inserts 32 to the target tube 30.
  • the resulting rotary target 20 is then machined to finish the outer surface thereof.
  • a titanium (TI) target tube 30 having a length of 550 mm with an outside diameter D 3 of 1 54 mm with a plurality of grooves 34 formed therein with a width W of 1 .5 mm and a maximum depth of 7 mm.
  • the grooves 34 are oriented relative to the central axis 26 at 45° thereto.
  • a plurality of inserts 32 having a locking mechanism 40 are configured to fit within each of the grooves 34.
  • a tungsten (W) target tube 30 having a length of 550 mm with an outside diameter D 3 of 154 mm includes a plurality of apertures 36 formed therein in a spiral pattern about the central axis 26, as shown in FIG. 9- 10.
  • the spiral pattern of apertures 36 is oriented relative to the central axis 26 at about 45° relative thereto.
  • a plurality of cylindrical inserts 32 are formed of Aluminum (Al) having a width Li slightly smaller than the width Si of the aperture, but the locking mechanism 40 has a width L 2 of 5.08 mm, the same width as the width Siof the aperture 36.
  • the insert 32 has a length L 3 of 7mm.
  • the inserts 32 are press-fit into the apertures 36.
  • the combined target tube 30 and inserts 32 is then processed in a HIPing procedure to integrally attach the inserts 32 to the target tube 30.
  • the rotary target 20 is then machined to remove any flashing or excess material.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une cible tournante bimétallique constituée d'un premier métal et d'un deuxième métal pour utilisation dans un pulvérisateur cathodique. La cible tournante comprend un tube cible comportant une pluralité de sillons ou d'orifices formés à l'intérieur. Un insert est positionnable à l'intérieur de chacun des sillons ou des orifices. Les inserts comprennent un mécanisme de verrouillage qui dépasse de la surface latérale de l'insert, ledit mécanisme de verrouillage étant configuré pour entrer en contact avec la surface définissant les sillons ou les orifices afin de fixer les inserts à l'intérieur du tube cible. Ensuite, les inserts sont intégralement fixés au tube cible par pressage isostatique à chaud, pressage isostatique à froid, soudage par faisceau d'électrons, soudage par ultrasons, fixation mécanique ou frittage.
PCT/US2011/001115 2010-06-23 2011-06-23 Cible bimétallique WO2011162813A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39827310P 2010-06-23 2010-06-23
US61/398,273 2010-06-23

Publications (1)

Publication Number Publication Date
WO2011162813A1 true WO2011162813A1 (fr) 2011-12-29

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PCT/US2011/001115 WO2011162813A1 (fr) 2010-06-23 2011-06-23 Cible bimétallique

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WO (1) WO2011162813A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
CN110257785B (zh) * 2019-07-29 2020-07-28 福建阿石创新材料股份有限公司 一种旋转金属靶材及其制备方法和装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2940369A1 (de) * 1979-10-05 1981-05-07 W.C. Heraeus Gmbh, 6450 Hanau Target
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
WO2008000575A1 (fr) * 2006-06-26 2008-01-03 Nv Bekaert Sa Procédé de fabrication d'une cible tournante de pulvérisation cathodique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2940369A1 (de) * 1979-10-05 1981-05-07 W.C. Heraeus Gmbh, 6450 Hanau Target
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
WO2008000575A1 (fr) * 2006-06-26 2008-01-03 Nv Bekaert Sa Procédé de fabrication d'une cible tournante de pulvérisation cathodique

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