WO2011162247A1 - Cellule solaire en couches minces et son procédé de production - Google Patents

Cellule solaire en couches minces et son procédé de production Download PDF

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WO2011162247A1
WO2011162247A1 PCT/JP2011/064148 JP2011064148W WO2011162247A1 WO 2011162247 A1 WO2011162247 A1 WO 2011162247A1 JP 2011064148 W JP2011064148 W JP 2011064148W WO 2011162247 A1 WO2011162247 A1 WO 2011162247A1
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Prior art keywords
silicon layer
thin film
solar cell
type silicon
electrode
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PCT/JP2011/064148
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English (en)
Japanese (ja)
Inventor
桜井　直明
具道 中
一史 塩澤
弘康 近藤
下田　達也
松木　安生
貴史 増田
Original Assignee
株式会社 東芝
独立行政法人 科学技術振興機構
Jsr株式会社
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Publication of WO2011162247A1 publication Critical patent/WO2011162247A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a thin film silicon solar cell and a method of manufacturing the same.
  • an electrode is formed on a thin film substrate, and a source gas such as cyclopentasilane (CPS) is deposited on the electrode using plasma chemical vapor deposition (PE-CVD) or the like.
  • PE-CVD plasma chemical vapor deposition
  • laser cutting has been performed to process cells and cells.
  • the silicon layer formed using the coating method has a problem that there are many dangling bonds and the photoconductivity is low. . Therefore, even when the silicon layer is formed using a coating method, a method for manufacturing a thin film silicon solar cell with less dangling bonds in the silicon layer has been desired.
  • PE-CVD plasma enhanced chemical vapor deposition
  • a first object of the present invention is to provide a method of manufacturing a thin film silicon solar cell using a coating method which can be easily manufactured while suppressing an increase in dangling bonds of a silicon layer.
  • a second object of the present invention is to provide a thin film silicon solar cell capable of improving the solar light uptake rate and a method of manufacturing the same.
  • an n-type is formed on a first electrode using a process of forming a first electrode on a substrate and a method of pattern-coating and drying a solution containing polysilane in an inert gas atmosphere.
  • Forming a silicon layer by laminating a silicon layer, an i-type silicon layer, and a p-type silicon layer, and forming a second electrode on the silicon layer;
  • a substrate a first electrode disposed on the substrate, and a method of pattern-coating and drying a solution containing polysilane in an inert gas atmosphere on the first electrode.
  • One layer is a thin film silicon solar cell in which dangling bonds are terminated using hydrogen.
  • the manufacturing method of the thin film silicon solar cell using the coating method which can be manufactured simply is provided, suppressing the increase in the dangling bond of a silicon layer.
  • the thin film silicon solar cell which can improve the uptake
  • the manufacturing-process figure (the 4) of the thin film silicon solar cell concerning 3rd embodiment It is a manufacturing-process figure (the 5) of the thin film silicon solar cell concerning 3rd embodiment. It is a manufacturing-process figure (the 6) of the thin film silicon solar cell concerning 3rd embodiment. It is a manufacturing-process figure (the 7) of the thin film silicon solar cell concerning 3rd embodiment. It is a manufacturing-process figure (the 8) of the thin film silicon solar cell concerning 3rd embodiment. It is a manufacturing-process figure (the 9) of the thin film silicon solar cell concerning 3rd embodiment. It is a manufacturing-process figure (the 10) of the thin film silicon solar cell concerning 3rd embodiment.
  • the change of the light absorption rate with a wavelength of 1 micrometer with respect to the period of a recessed part at the time of forming a recessed part periodically in the n-type silicon layer side surface of an electrode and the transparent conductive film side surface of a p-type silicon layer is shown.
  • the change of the light absorption rate of wavelength 1 micrometer with respect to the period of a recessed part is shown.
  • the thin film silicon solar cell 11A according to the first embodiment shown in FIG. 1 comprises a substrate 1, a first electrode 3 disposed on the substrate 1, and an n-type silicon layer 5An, an i-type, on the first electrode 3. It has a silicon layer 5A in which a silicon layer 5Ai and a p-type silicon layer 5Ap are stacked, and a second electrode 8 disposed on the silicon layer 5A. Although not shown, the first electrode 3 and the second electrode 8 are electrically connected.
  • the substrate 1 is not particularly limited as long as it is a thin film substrate 1.
  • a stainless steel thin film substrate can be used.
  • the first electrode 3 a film obtained by applying and drying a liquid metal material containing aluminum (Al) or silver (Ag) nanoparticles on the substrate 1 can be used.
  • the silicon layer 5A a film obtained by applying and drying a solution containing polysilane by an inkjet method or the like in an inert gas atmosphere can be used.
  • the i-type silicon layer 5Ai is treated with hydrogen, for example, dangling bonds by exposing hydrogen plasma or atmospheric pressure hydrogen plasma It is preferable that reduction processing is performed.
  • a film obtained by applying and drying a liquid material containing nanoparticles such as ITO (transparent conductive film, indium tin oxide) or SnO 2 on the silicon layer 5 A can be used.
  • the substrate 1 is prepared.
  • a thin film substrate 1 made of roll type stainless steel having a width of 1100 m is prepared.
  • the inert gas nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas or the like can be used.
  • the first electrode 3 is formed on the substrate 1.
  • aluminum is applied to the entire surface of the substrate 1 by screen coating, and fired at 430 ° C. to form an electrode 3 having a thickness of 100 ⁇ m and a sheet resistance value of ⁇ 1 ⁇ / sq.
  • an n-type silicon layer 5An, i-type silicon layer on the first electrode 3 side from the first electrode 3 side using a method of applying a pattern containing a polysilane in an inert gas atmosphere and drying the pattern 5Ai and p-type silicon layer 5Ap are stacked in this order to form a silicon layer 5A.
  • a method of forming the silicon layer 5A in which each of the n-type silicon layer 5An, the i-type silicon layer 5Ai, and the p-type silicon layer 5Ap is an amorphous type will be described below.
  • n-type silicon layer 5An for example, as shown in FIG. 4, a solution containing phosphorus-doped polysilane is pattern-coated on the electrode 3 in an inert gas atmosphere and dried to form the n-type The silicon layer 5An is formed. Specifically, light having a wavelength of 405 nm and 3000 mW is appropriately irradiated for 1 to 30 minutes to a solution obtained by mixing 0.25% by mass of white phosphorus P 4 with cyclopentasilane (CPS). This solution is diluted to about 10% with a hydrocarbon-based solvent such as toluene, pattern-coated on the electrode 3, and preheated at 200 ° C. for 10 seconds.
  • a hydrocarbon-based solvent such as toluene
  • baking is performed at 400 ° C. to 460 ° C., preferably 420 ° C. to 440 ° C., for 60 minutes, whereby the n-type silicon layer 5An of 30 nm in film thickness and conductivity 2.5 ⁇ 10 ⁇ 3 S / cm is on the electrode 3 Is formed.
  • a solution containing polysilane is patterned and dried in an inert gas atmosphere on the n-type silicon layer 5An and i-type silicon layer is dried.
  • Form layer 5Ai Specifically, light having a wavelength of 405 nm and 3000 mW is appropriately adjusted in a solution containing CPS in 1 to 30 minutes to obtain a polysilane solution having a molecular weight of about 1000.
  • the polysilane solution is diluted to about 30% with a hydrocarbon-based solvent such as toluene, and the pattern is applied on the n-type silicon layer 5An with a dispenser and preheated at 200 ° C.
  • thermal decomposition is performed at 400 ° C. to 460 ° C., preferably 420 ° C. to 440 ° C., for 60 minutes to form an i-type silicon layer 5Ai having a film thickness of 200 nm.
  • a solution containing polysilane doped with a borane compound is patterned on an i-type silicon layer 5Ai in an inert gas atmosphere and dried. Then, a p-type silicon layer 5Ap is formed.
  • a solution obtained by mixing 1% of borane compounds such as decaborane with CPS is irradiated with light having a wavelength of 405 nm and 3000 mW for 1 to 30 minutes, and this solution is used as a hydrocarbon system such as toluene.
  • i-type silicon layer 5Ai Dilute to about 10% with a solvent, apply a pattern on i-type silicon layer 5Ai with a dispenser, and preheat at 200 ° C. for 10 seconds. Thereafter, thermal decomposition is performed at 400 ° C. to 460 ° C., preferably 420 ° C. to 440 ° C. for 60 minutes to form a p-type silicon layer 5 Ap having a film thickness of 30 nm and a conductivity of 2.6 ⁇ 10 ⁇ 5 S / cm. .
  • dangling bond reduction processing is performed on at least one of the n-type silicon layer 5An, the i-type silicon layer 5Ai, and the p-type silicon layer 5Ap.
  • hydrogen is preferably used to terminate the dangling bond.
  • heat treatment is preferably performed at a temperature suitable for the polymerization reaction, and particularly preferably heat treatment is performed at a temperature of 420 ° C. to 440 ° C.
  • the hydrogen plasma 12 is exposed to the dangling bond in the i-type silicon layer 5Ai in the vacuum chamber. Perform reduction processing.
  • the irradiation conditions of the hydrogen plasma 12 may be, for example, a hydrogen flow rate of 100 sccm, a microwave output of 445 W, a pressure of 191.95 Pa (1.44 Torr), a heater temperature of 480 ° C. (substrate surface temperature of 400 ° C.), and an irradiation time of about 10 minutes. preferable.
  • a method of heating at a temperature at which the silicon layer 5A is not etched an etching protective film such as a silicon oxide film on the surface of the silicon layer 5A. It is preferable to use a method of providing and processing. When the etching protective film is used, it is preferable to remove the etching protective film with a chemical solution such as hydrogen fluoride after the dangling bond reduction treatment.
  • a chemical solution such as hydrogen fluoride
  • the second electrode 8 is formed on the silicon layer 5A.
  • the thin film silicon solar cell 11A shown in FIG. 1 is manufactured.
  • the first electrode 3 and the second electrode 8 are also formed by applying a pattern of a liquid material. This is because manufacturing equipment can be simplified by using a method of applying a liquid material pattern. Further, as described in detail in the third embodiment, the surface of the electrode 3 can be easily processed, so that it is possible to improve the solar light intake rate.
  • the application method include a method of applying a pattern using a general droplet application device such as an inkjet device, a dispenser, a micro dispenser, or a slit coater. Since the polysilane and the liquid metal material react with oxygen to denature, the series of steps is preferably in an inert gas atmosphere in the absence of oxygen. Further, it is preferable to mix a reducing gas such as hydrogen as necessary.
  • the manufacturing apparatus is not particularly limited as long as the above steps can be carried out, it is preferable to use a roll-to-roll manufacturing apparatus. This is because continuous production of the thin film silicon solar cell 11A is facilitated.
  • the roll-to-roll manufacturing apparatus includes a delivery unit for delivering a thin film substrate made of a roll type stainless steel, and a winding unit for winding a thin film silicon solar cell, and A roll-to-roll manufacturing apparatus (not shown) further comprising a unit for performing operations corresponding to the steps of the method for manufacturing a thin film silicon solar cell according to one embodiment can be used.
  • a thin film silicon substrate made of a roll type stainless is attached to the delivery unit of the roll-to-roll manufacturing apparatus, and the thin film silicon solar cell 11A is made to pass through each unit while rolling up the thin film substrate made of roll stainless steel. Manufactured in a continuous process.
  • the silicon layer 5A can be formed by applying and drying a solution containing polysilane under a low oxygen atmosphere without using an expensive plasma CVD apparatus. It can be formed. In addition, by coating all necessary patterns of metal, metal oxide, etc. with liquid ink, the laser cutting process which is necessary when using the plasma CVD apparatus is also unnecessary, and the production efficiency is improved.
  • the dangling bond is reduced by performing the dangling bond reduction treatment, as a result, the contrast ratio is improved, and the contrast ratio is changed.
  • the photoconductive characteristics are improved.
  • Example of the First Embodiment (1) In the first embodiment, an experiment was conducted to see the heat treatment effect on a solution containing polysilane as a step before dangling bond reduction treatment.
  • Table 1 summarizes the results when the baking temperature at the time of forming the i-type silicon layer 5Ai is 330 ° C. and 430 ° C. From Table 1, comparing the cases of firing at 330 ° C. and 430 ° C., it was found that although the photoconductivity was almost the same, the dark conductivity was higher when firing at 330 ° C. This indicates that the conductivity in the dark is lower when baked at 430 ° C. From the above, it is shown that 430 ° C.
  • the electron spin resonance (ESR) device is used to divide the case of hydrogen (H 2 ) plasma treatment and the case of no treatment. The amount of unpaired electrons, that is, the dangling bond density was measured, and the film thickness of the silicon layer 5A was measured. The obtained results are shown in Table 2.
  • the values of hydrogen, dangling bond density, and photoconductivity of the i-type silicon layer formed by the coating method and the i-type silicon layer formed by the general CVD method are shown in Table 3 Shown in.
  • the i-type silicon layer formed by the application method has an order of dangling bond density more than that of the i-type silicon layer formed by the general CVD method by about one digit. It also has low photoconductivity.
  • the dangling bond is on the same order as the amorphous silicon layer manufactured using the CVD method. It was shown to have decreased.
  • the silicon layer 5A is divided into the case of hydrogen (H 2 ) plasma treatment or hydrogen (H 2 ) annealing treatment and the case of non-treatment, and the Fourier transform type red
  • the amount of hydrogen bonds was measured using an external spectroscopy (FT-IR) device.
  • the obtained result is shown in FIG.
  • the hydrogen (H 2 ) plasma treatment increased the absorbance (AU) at the absorption wavelengths of SiH and SiH 3 . This indicates that the hydrogen (H 2 ) plasma treatment increased SiH and SiH 3 and reduced dangling bonds.
  • a thin film silicon solar cell 11B according to the second embodiment shown in FIG. 8A includes a substrate 1, a first electrode 3 disposed on the substrate 1, and an n-type silicon layer 5Bn on the first electrode 3.
  • Recesses 5Bph1, 5Bph2, 5Bph3, 5Bph4, 5Bph5, 5Bph6, 5Bph7 are periodically provided on the surface of the second electrode 8 of the p-type silicon layer 5Bp.
  • the concave portions 5Bph1 to 5Bph7 are periodically provided on the surface of the second electrode 8 of the p-type silicon layer 5Bp, but the surface of the n-type silicon layer 5Bn of the electrode 3 and the surface of the second electrode 8 of the p-type silicon layer 5Bp
  • the concave portion may be periodically provided on at least one of the two.
  • illustration is abbreviate
  • the “period” refers to the distance B between the left ends of adjacent concave portions 5Bph2 and 5Bph3.
  • the width A and the depth C of each of the concave portions 5Bph1 to 5Bph7 are constant.
  • the preferable period when the depth C of the concave portions 5Bph1 to 5Bph7 is 100 nm is 0.1 ⁇ m to 1.0 ⁇ m, more preferably 0.1 to 0.8 ⁇ m.
  • FIG. 8 (a), FIG. 12 (a), and FIG. 13 (a) are the same as that of the cross-sectional schematic obtained by cut
  • concave portions 5Bph1 to 5Bph7 are provided in the p-type silicon layer 5Bp.
  • concave portions 5Bph1 to 5Bph7 can be provided by using a photolithography method or the like.
  • the second electrode 8 As shown in FIG. 11, the second electrode 8 is provided. Thus, the thin film silicon solar cell 11B shown in FIG. 8 is manufactured.
  • the concave portions 5Bph1 to 5Bph7 are provided on the surface of the p-type silicon layer 5Bp to diffusely reflect the sunlight which has entered the thin film silicon solar cell 11B. Can be confined within the thin film silicon solar cell 11B. As a result, power generation efficiency is increased because sunlight can be efficiently taken.
  • Example of Second Embodiment In the second embodiment, an experiment was conducted on the influence of the recess period on the absorptivity of light having a wavelength of 1 ⁇ m. In addition, the reason for choosing the light of a wavelength of 1 ⁇ m is because it is considered that it can be approximated to all the wavelengths of sunlight.
  • the absorptivity is improved by setting the period to be longer than 0.3 ⁇ m and shorter than 0.7 ⁇ m.
  • the absorptivity is particularly improved by setting the period to be longer than 0.4 and shorter than 0.6.
  • the absorptivity is improved by setting the cycle to be longer than 0.3 ⁇ m and shorter than 0.5 ⁇ m.
  • FIG. 29 and FIG. 30 were compared, it turned out that the absorptivity becomes higher in the case of FIG.
  • FIG. 32 shows the relationship between the period of the recesses and the integral value of the absorptivity of sunlight. As shown in FIG. 32, it was found that by setting the cycle of the recesses to 0.1 ⁇ m to 0.8 ⁇ m, the absorptivity of sunlight is improved as compared with the case where the recesses are not provided.
  • the thin film silicon solar cell 11C according to the third embodiment shown in FIG. 14 (a) is a substrate 1, a first electrode 3 disposed on the substrate 1, and an n-type disposed on the first electrode 3.
  • Recesses 5C2ph1, 5C2ph2, 5C2ph3, 5C2ph4, 5C2ph5, 5C2ph6, 5C2ph7 are periodically provided on the surface of the p-type silicon layer 5C2p on the second electrode 8 side. Also, recesses 3h1, 3h2, 3h3, 3h4, 3h5, 3h6, 3h7 are periodically provided on the surface of the first electrode 3 on the n-type silicon layer 5Bn side. Although not shown, the first electrode 3 and the second electrode 8 are electrically connected.
  • the electrode 3 is formed on the substrate 1 as shown in FIG. 15 in accordance with the steps of FIGS. From the viewpoint of facilitating processing of the surface of the electrode 3, it is preferable to use a method of applying a pattern of a liquid material.
  • the electrode 3 is provided with concave portions 3h1 to 3h7.
  • the concave portions 3h1 to 3h7 can be provided by using a photolithography method or the like.
  • i-type silicon layer 5C1i is irradiated with light having a half width of 1 ms or less by xenon (Xe) flash lamps 14a, 14b and 14c, and i-type silicon layer 5C1i is polycrystalline.
  • Xe xenon
  • i-type silicon layer 5C1i is polycrystalline.
  • the uppermost silicon layer is polycrystallized, the lower silicon layer is also polycrystallized, and it becomes difficult to combine the amorphous silicon layer and the polycrystallized silicon layer.
  • Green laser annealing may be used as a means for polycrystallizing the i-type silicon layer.
  • the second electrode 8 is formed as shown in FIG. 25 in the same manner as the process of FIG.
  • the thin film silicon solar cell 11C shown in FIG. 14 is manufactured.
  • the silicon layers 5A and 5B are one layer, but a plurality of silicon layers are formed between the first electrode 3 and the second electrode 8
  • a polycrystalline silicon layer 5C1 and an amorphous silicon layer 5C2 may be provided.
  • the i-type silicon layers as an i-type amorphous silicon layer and the other i-type silicon layer as an i-type polycrystallized silicon layer, the mutual absorption of light is absorbed by the layers mutually absorbing light. This is because the width of the wavelength is broadened and the light absorption efficiency is improved.
  • the recesses 3h1 to 3h7 are also formed on the surface of the first electrode 3 (in other words, the n-type polycrystalline silicon layer
  • the convex portions 5C1 np1 to 5 C1 np7 on the surface of the thin film silicon solar cell 11C more efficiently than in the second embodiment, irregularly reflecting the sunlight that has entered the thin film silicon solar cell 11C and confining it in the thin film silicon solar cell 11C. Can. As a result, power generation efficiency is increased because sunlight can be efficiently taken.
  • the concave portions 5Bph1 to 5Bph7 are formed in a band shape as shown in FIG. 8B in order to facilitate understanding of the invention.
  • a checkered pattern from the viewpoint of efficiently taking in light incident perpendicularly to the longitudinal direction of the thin film silicon solar cell 11B. It is preferable to arrange at equal intervals in the longitudinal direction and the width direction.
  • the shape of the convex portion 8Bp of the second electrode 8 formed in the concave portion is not limited to a polygonal prism such as a square prism, and may be a cylindrical shape as shown in FIG. 13 (b).
  • the convex portions 8Bp1... 8Bp7 do not need to be in contact with each other, and they may be spaced apart at equal intervals as shown in the second modification of the second embodiment of FIG.
  • the manufacturing method of the thin film silicon solar cell using the coating method which can be manufactured simply is provided, suppressing the increase in the dangling bond of a silicon layer.

Abstract

Cette invention concerne un procédé de production d'une cellule solaire en couches minces à base de silicium (11A) comprenant l'étape consistant à former une première électrode (3) sur un substrat. Ledit procédé comprend en outre l'étape consistant à stratifier une couche de silicium de type n (5An), une couche de silicium de type i (5Ai) et une couche de silicium de type p (5Ap) sur la première électrode (3) au moyen d'une technique consistant à appliquer en forme de motif une solution contenant du polysilane sous atmosphère de gaz inerte et à sécher le motif pour former ainsi une couche de silicium (5A). Le procédé comprend enfin une étape consistant à former une seconde électrode (8) sur la couche de silicium (5A). A l'étape de formation de la couche de silicium (5A) au moins une couche choisie parmi la couche de silicium de type n (5An), la couche de silicium de type i (5Ai) et la couche de silicium de type p (5Ap) est soumise à un traitement de réduction des liaisons pendantes. Le procédé de l'invention permet de produire une cellule solaire en couches minces à base de silicium en utilisant un procédé de revêtement permettant de simplifier la production de la cellule solaire et ne présentant pas d'augmentation des liaisons pendantes dans une couche de silicium.
PCT/JP2011/064148 2010-06-21 2011-06-21 Cellule solaire en couches minces et son procédé de production WO2011162247A1 (fr)

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