WO2011144938A3 - Avalanche photodiode structure - Google Patents

Avalanche photodiode structure Download PDF

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Publication number
WO2011144938A3
WO2011144938A3 PCT/GB2011/050948 GB2011050948W WO2011144938A3 WO 2011144938 A3 WO2011144938 A3 WO 2011144938A3 GB 2011050948 W GB2011050948 W GB 2011050948W WO 2011144938 A3 WO2011144938 A3 WO 2011144938A3
Authority
WO
WIPO (PCT)
Prior art keywords
multiplication layer
layer
avalanche photodiode
apd
multiplication
Prior art date
Application number
PCT/GB2011/050948
Other languages
French (fr)
Other versions
WO2011144938A2 (en
Inventor
Chee Hing Tan
Original Assignee
The University Of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University Of Sheffield filed Critical The University Of Sheffield
Publication of WO2011144938A2 publication Critical patent/WO2011144938A2/en
Publication of WO2011144938A3 publication Critical patent/WO2011144938A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP

Abstract

The invention provides an avalanche photodiode (APD) having a multiplication layer and an absorption layer provided on a substrate, wherein the multiplication layer has a thickness less than or substantially equal to 1000 Angstroms (100nm), and the multiplication layer comprises a layer of AIAsSb, AlPSb or GaPSb. An APD having such a multiplication layer has the advantage that excess noise may be reduced and gain -bandwidth product (GBP) increased compared with APDs comprising an InP or InAlAs multiplication layer.
PCT/GB2011/050948 2010-05-19 2011-05-19 Avalanche photodiode structure and method WO2011144938A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1008349.1 2010-05-19
GBGB1008349.1A GB201008349D0 (en) 2010-05-19 2010-05-19 Avalanche photodiode structure and method

Publications (2)

Publication Number Publication Date
WO2011144938A2 WO2011144938A2 (en) 2011-11-24
WO2011144938A3 true WO2011144938A3 (en) 2012-08-23

Family

ID=42340984

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2011/050948 WO2011144938A2 (en) 2010-05-19 2011-05-19 Avalanche photodiode structure and method

Country Status (2)

Country Link
GB (1) GB201008349D0 (en)
WO (1) WO2011144938A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455354B (en) * 2012-07-05 2014-10-01 Univ Nat Central Homogeneous junction type of high speed photodiode
KR102017125B1 (en) * 2018-03-28 2019-09-03 주식회사 포셈 Manufacturing method of photodiode
GB201916784D0 (en) * 2019-11-18 2020-01-01 Univ Sheffield An avalanche photodiode structure
CN113284972B (en) * 2021-05-14 2022-08-26 长春理工大学 Quantum well avalanche photodiode
CN113451436B (en) * 2021-06-23 2023-03-24 中国电子科技集团公司第四十四研究所 Nitride ultraviolet avalanche photodetector and manufacturing method thereof
JP7433540B1 (en) 2023-02-06 2024-02-19 三菱電機株式会社 avalanche photodiode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757392A1 (en) * 1995-08-03 1997-02-05 Hitachi Europe Limited Semiconductor structures
US20030226952A1 (en) * 2002-06-07 2003-12-11 Clark William R. Three-terminal avalanche photodiode
US7432537B1 (en) * 2005-09-14 2008-10-07 Voxtel, Inc. Avalanche photodiode structure
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757392A1 (en) * 1995-08-03 1997-02-05 Hitachi Europe Limited Semiconductor structures
US20030226952A1 (en) * 2002-06-07 2003-12-11 Clark William R. Three-terminal avalanche photodiode
US7432537B1 (en) * 2005-09-14 2008-10-07 Voxtel, Inc. Avalanche photodiode structure
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHENG X-C ET AL: "Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 86, no. 8, 15 October 1999 (1999-10-15), pages 4576 - 4579, XP012048840, ISSN: 0021-8979, DOI: 10.1063/1.371405 *
DONGHYUN KIM ET AL: "Band to Band Tunneling Study in High Mobility Materials : III-V, Si, Ge and strained SiGe", DEVICE RESEARCH CONFERENCE, 2007 65TH ANNUAL, IEEE, PI, 1 June 2007 (2007-06-01), pages 57 - 58, XP031155404, ISBN: 978-1-4244-1101-6 *
SANDIP TIWARI ET AL: "Empirical fit to band discontinuities and barrier heights in III-V alloy systems", APPLIED PHYSICS LETTERS, vol. 60, no. 5, 3 February 1992 (1992-02-03), pages 630 - 632, XP055031167, ISSN: 0003-6951, DOI: 10.1063/1.106575 *
WASIM HUSSAIN ET AL: "Theoretical analysis of noise performance of an In0.10Ga 0.90Sb avalanche photodiode", INTERNET, 2009. AH-ICI 2009. FIRST ASIAN HIMALAYAS INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 3 November 2009 (2009-11-03), pages 1 - 4, XP031570924, ISBN: 978-1-4244-4569-1 *

Also Published As

Publication number Publication date
WO2011144938A2 (en) 2011-11-24
GB201008349D0 (en) 2010-07-07

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