WO2011142764A1 - Procédé pour le cmp consistant à utiliser un tampon dans une bouteille - Google Patents

Procédé pour le cmp consistant à utiliser un tampon dans une bouteille Download PDF

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Publication number
WO2011142764A1
WO2011142764A1 PCT/US2010/034975 US2010034975W WO2011142764A1 WO 2011142764 A1 WO2011142764 A1 WO 2011142764A1 US 2010034975 W US2010034975 W US 2010034975W WO 2011142764 A1 WO2011142764 A1 WO 2011142764A1
Authority
WO
WIPO (PCT)
Prior art keywords
beads
pad
counter face
slurry
polishing
Prior art date
Application number
PCT/US2010/034975
Other languages
English (en)
Inventor
Leonard Borucki
Yasa Sampurno
Original Assignee
Araca, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Araca, Inc. filed Critical Araca, Inc.
Priority to PCT/US2010/034975 priority Critical patent/WO2011142764A1/fr
Priority to US13/225,086 priority patent/US20110312182A1/en
Publication of WO2011142764A1 publication Critical patent/WO2011142764A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Definitions

  • the present invention relates to a method of CMP wherein the polishing pad is partially or wholly replaced by a counter face made of a smooth hard material and beads or particles of a hard material are suspended in the slurry to provide asperities for the polishing process.
  • CMP chemical-mechanical planarization
  • a silicon wafer with integrated circuit chips under construction is held upside down in a rotating wafer carrier and is pressed with a controlled force against a large rotating polishing platen.
  • the platen is covered with a thin polyurethane polishing pad, typically up to a meter in diameter and 1 -2 mm thick.
  • Microscopic protuberances on the pad surface also known as asperities or summits, make contact with the wafer, and, with the assistance of polishing slurry containing chemistry and abrasive particles, effect the removal of material from the wafer surface.
  • the polishing slurry is usually applied at a slow, continuous rate to the pad in the vicinity of the wafer using a drip or spray system. Because polyurethane pad asperities may be irreversibly deformed by contact with the wafer, or may be abraded by the slurry particles, the pad surface must be continuously renewed in order to sustain a stable CMP process. Pad renewal is usually accomplished with a circular diamond cutting tool, called a pad conditioner or pad dresser. During CMP tool operation, the pad conditioner is swept back and forth across the pad surface under a light applied load. The diamonds cut the pad surface at a slow rate, eliminating old asperities and creating new ones in the process.
  • conditioners Since they cut the pad, conditioners produce small particles of pad debris, many of which are washed off of the pad surface, but some of which also come into contact with the wafer. The latter are suspected to be a source of defects that affect integrated circuit viability and reliability. [0005] Conditioning also gradually thins the pad, which eventually forces pad replacement.
  • Conventional CMP processing, as described above, has several weaknesses. One is that the pad asperities so essential to the process are in fact not very well controlled.
  • polishing pads typically cost a few hundred to in excess of a thousand dollars each.
  • a commercial polisher may use up to three pads simultaneously, and the useful life for each pad is often only two or three days of continuous use.
  • Each CMP tool therefore-uses hundreds of pads annually, and since wafer fabrication facilities can have dozens of tools, the total cost for pads alone is substantial. Since it can take several hours to remove a pad and install a new one, and dozens of monitor wafers to qualify the new pad for production worthiness, the engineering and product loss cost of tool down time can be significant.
  • the method of the present invention has been developed in response to the present state of the art, and, in particular, in response to the problems and needs in the art that have not yet been fully solved by currently available CMP methods for reducing the level of defects to the semiconductor wafer and inconvenience, inefficiency and process waste to the CMP process caused by the use of polishing pads with fixed asperities and using conditioning discs.
  • the purpose of the method is to allow the consistent production of a significantly higher quality of semiconductor wafer product for lower cost.
  • All dimensions in the present invention are based on a polishing pad size or as the case may be counter face size of about 20" to 30" in diameter and a wafer size of between [ 8"] and [ 12"] in diameter and may be altered as needed in proportion to changes in the size of the polishing pad and wafer used.
  • the specific dimensions given herein are in no way limiting but are by way of example to demonstrate an effective embodiment of the invention.
  • dimensions include, without limitation, dimensions of parts, flow rates, measurement of damage, rates of rotation and velocities.
  • the beads of the present invention are not particularly limited and the material used for the beads may be any durable material that is flexible enough to withstand the pressures involved in CMP and at the same time is chemically stable in the respective chemical environments in which CMP is carried out. Beads or particles made of plastic, ceramic, glass, mineral, metal or the like may be used. Polyethylene beads are preferred.
  • the beads of the present invention and especially the active beads are compressed between the wafer surface and the counter face and slide or roll along the wafer surface. Consequently, although there is no limitation, a certain degree of
  • the size if the beads used is not particularly limited and any diameter that corresponds roughly to the dimensions of the asperities on commercial polishing pads sought to be replaced by the present invention may be used. Sizes within a range of between one and 50 microns are preferred.
  • the particles or beads may be uniform in size or they may vary either in two or more discrete variations of size in any proportion or quantity.
  • the distribution of sizes may also be continuous or irregular, and where distribution of size is irregular, the particle size distributions are not particularly limited, however, particle size distributions represented by Gaussian curves corresponding roughly to the distribution of dimensions of asperities on commercial polishing pads are preferred.
  • the shape of the beads is not particularly limited and the beads may be in any shape or configuration including even or uneven and asymmetric shapes.
  • Non-angular or angular shapes may be used without limitation and among non-angular shapes spherical or ovoid shaped beads or particles are preferred and spherical shapes are more preferred.
  • the roughness of the surface of the particle is not particularly limited and the surface may be either smooth or rough.
  • the concentration of the beads in slurry is not particularly limited and any suitable concentration may be used provided, however, that a concentration of between 0.1 weight percent and 30 weight percent of beads is preferred.
  • the concentration of beads in the slurry is determined by the area density required on a pad surface at a given load.
  • the composition of the slurry is not particularly limited and any slurry and, particularly, any commercial CMP slurry may be used provided, however, that slurries that easily wet and suspend the beads or particles without surfactants or other agents are preferred.
  • the range of concentrations that may be used is very large. However, the variability in asperity topography versus the size of the beads may be correspondingly large as well. Bead surface character as opposed to slurry and pad effects determines what weight percent of beads may optimize polishing effects.
  • the counter face material of the present invention is not particularly limited and any hard plastic, ceramic, mineral, metal or other suitable material may be used but polyurethane is preferred.
  • the shape of the counter face is not particularly limited but it could be a plain, smooth solid object, a conventional pad with a skived, or planarized surface, or even a roughened surface, or a smooth alternative plastic or polymer.
  • the size of the counter face of the present invention is not particularly limited though in general it should not be larger than the polishing pad used on the relevant CMP tool or smaller than the wafer. A counter face the same size as the polishing pad is preferred.
  • the means of attachment of the counter face of the present invention to the CMP apparatus is not particularly limited however, the attachment of the counter face to the polishing platen in the same way as a commercial polishing pad is attached, using a double-sided adhesive film is preferred.
  • the distance between the counter face surface of the present invention and the wafer during CMP is not particularly limited however it is preferred that it should be about the same as the average diameter of the beads or particles used or slightly less.
  • the counter face of the present invention may be hydrophilic or hydrophobic without limitation but a hydrophilic counter face is preferred.
  • the counter face of the present invention develops a surface charge when slurry is applied that will attract the beads.
  • the counter face is wettable by the slurry and the suspended beads deposit on the counter face surface at a slow rate. In this case, many of them then encounter the wafer during CMP and effect polishing. Since these beads are deposited continuously and active beads are then crushed or deformed by the wafer, bead removal from the counter face is a necessity. This means of accomplishing this are not particularly limited but removal may be accomplished by means of a soft brush, which would replace the conditioner in the normal process.
  • the surfactant used to suspend beads in commercial slurry is not particularly limited and may be a commercially available surfactant like Tweon 20 or the like.
  • One embodiment of the method of the present invention comprises removal of the commercial polishing pad from the CMP polishing tool to be used, addition of a counter face affixed to the CMP polishing tool according to the methods of the present invention and polishing a wafer under normal conditions.
  • the beads of the present invention are suspended in the slurry.
  • the method of introduction of beads thus suspended is not particularly limited and they may be introduced either through the normal slurry input tube or by means of an independent tube or device.
  • a minimal amount, eg 1- 5 ml/liter, of a surfactant, such as Tweon 20 or other additive to help promote suspension may be added with or without stirring to effect even suspension of the beads. In this way a commercial slurry requiring the least modification is selected.
  • the beads were suspended in a relatively stable smooth suspension with no flocking and a low settlement rate.
  • One or more counter faces was prepared for use on an R&D polishing tool, the Araca APD-500.
  • the precise grooving of the counter face was done by Toho Engineering to match M type concentric grooving. Then a series of polishing experiments at a single polishing pressure and sliding speed under conditions used in commercial polishing to measure the blanket material removal rate of either silicon dioxide or copper, depending on the slurry selected. The blanket rate is measured on wafers without circuit patterns).
  • the modified process will replace a technologically complex diamond conditioner, which uses artificial diamonds and is made using processes that include electroplating, sintering, brazing or chemical vapor deposition, with a relatively environmentally friendly soft brush.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention se rapporte à un procédé de CMP où le tampon de polissage est partiellement ou complètement remplacé par une contre-face constituée d'une matière dure et lisse, et des billes ou des particules de matière dure sont mises en suspension dans le liquide de polissage pour obtenir les aspérités nécessaires au processus de polissage.
PCT/US2010/034975 2010-05-14 2010-05-14 Procédé pour le cmp consistant à utiliser un tampon dans une bouteille WO2011142764A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/US2010/034975 WO2011142764A1 (fr) 2010-05-14 2010-05-14 Procédé pour le cmp consistant à utiliser un tampon dans une bouteille
US13/225,086 US20110312182A1 (en) 2010-05-14 2011-09-02 Method and apparatus for chemical-mechanical planarization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/034975 WO2011142764A1 (fr) 2010-05-14 2010-05-14 Procédé pour le cmp consistant à utiliser un tampon dans une bouteille

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/225,086 Continuation-In-Part US20110312182A1 (en) 2010-05-14 2011-09-02 Method and apparatus for chemical-mechanical planarization

Publications (1)

Publication Number Publication Date
WO2011142764A1 true WO2011142764A1 (fr) 2011-11-17

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Country Status (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (fr) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Nouvelle technologie de type tampon-en-bouteille (pib) pour des boues de planarisation chimico-mécanique (cmp) avancée et procédés
WO2022026369A1 (fr) * 2020-07-29 2022-02-03 Versum Materials Us, Llc Technologie tampon-en-bouteille (pib) pour planarisation chimico-mécanique (cmp) de cuivre et de trou d'interconnexion traversant le silicium (tsv)
WO2023004269A1 (fr) * 2021-07-23 2023-01-26 Versum Materials Us, Llc Technologie de type tampon en bouteille (pib) pour boues de barrière au cuivre
WO2023086783A1 (fr) * 2021-11-10 2023-05-19 Versum Materials Us, Llc Polissage de planarisation chimico-mécanique de type tampon-en-bouteille avec tampons de polissage solides non poreux à faible coût

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020144371A1 (en) * 2001-04-04 2002-10-10 Robert Piombini Polishing pad and system
US6945857B1 (en) * 2004-07-08 2005-09-20 Applied Materials, Inc. Polishing pad conditioner and methods of manufacture and recycling
US20080113513A1 (en) * 2003-11-17 2008-05-15 Baum Thomas H Chemical mechanical planarization pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020144371A1 (en) * 2001-04-04 2002-10-10 Robert Piombini Polishing pad and system
US20080113513A1 (en) * 2003-11-17 2008-05-15 Baum Thomas H Chemical mechanical planarization pad
US6945857B1 (en) * 2004-07-08 2005-09-20 Applied Materials, Inc. Polishing pad conditioner and methods of manufacture and recycling

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (fr) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Nouvelle technologie de type tampon-en-bouteille (pib) pour des boues de planarisation chimico-mécanique (cmp) avancée et procédés
WO2022026369A1 (fr) * 2020-07-29 2022-02-03 Versum Materials Us, Llc Technologie tampon-en-bouteille (pib) pour planarisation chimico-mécanique (cmp) de cuivre et de trou d'interconnexion traversant le silicium (tsv)
EP4189026A4 (fr) * 2020-07-29 2024-07-31 Versum Mat Us Llc Technologie tampon-en-bouteille (pib) pour planarisation chimico-mécanique (cmp) de cuivre et de trou d'interconnexion traversant le silicium (tsv)
WO2023004269A1 (fr) * 2021-07-23 2023-01-26 Versum Materials Us, Llc Technologie de type tampon en bouteille (pib) pour boues de barrière au cuivre
WO2023086783A1 (fr) * 2021-11-10 2023-05-19 Versum Materials Us, Llc Polissage de planarisation chimico-mécanique de type tampon-en-bouteille avec tampons de polissage solides non poreux à faible coût

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