WO2011141383A1

WO2011141383A1 - Corrosion-resistant silver reflector layer for an optoelectronic component, corresponding component and production method

Info

Publication number: WO2011141383A1
Application number: PCT/EP2011/057328
Authority: WO
Inventors: Nikolaus Gmeinwieser; Stefanie BRÜNINGHOFF; Ivan Galesic; Karl Engl; Markus Maute
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2010-05-10
Filing date: 2011-05-06
Publication date: 2011-11-17
Also published as: TW201214799A; DE102010020211A1

Abstract

The invention relates to a support for an optoelectronic component (5), which comprises at least one reflective layer (2) and a functional material (3) on a support element (1), wherein the reflective layer (2) contains silver, the functional material (3) is in direct contact with the silver, such the functional material (3) effects a reduction in corrosion of the reflective layer (2). The invention further relates to a method for producing a support for an optoelectronic component and to an optoelectronic device comprising a support.

Description

CORROSION RESISTANT SILVER REFLECTIVE LAYER FOR AN OPTOELECTRONIC COMPONENT, CORRESPONDING COMPONENT AND METHOD OF MANUFACTURE

Support for an optoelectronic component,

Optoelectronic device with a carrier and method for producing a carrier for an optoelectronic component

This patent application claims the priorities of

European Patent Application 10006660.4 and German Patent Application 102010020211.8, the disclosure of which is hereby incorporated by reference.

There are a support for an optoelectronic device, an optoelectronic device with a carrier and a method for producing a carrier for a

specified optoelectronic component.

In optoelectronic devices such as

Optoelectronic packages are silver surfaces due to their excellent reflection properties, their

Bondability and their electrical conductivity used many times. However, in the case of a silver mirror layer, it is difficult to permanently obtain good adhesion to electrical terminals, such as for contacting a semiconductor chip, high reflectivity, and reliable protection against corrosion of the silver. The corrosion of silver, in particular by the action of sulfur gases

(Sulfidation) and moisture, leads to the darkening of the silver surface and thus to a significant reduction in reflectivity. For example, a light

emitting diode (LED) mounted on a silver mirror, the corrosion-related darkening of the silver mirror leads to a loss of the LED from the environment emitted light, since the part of the light, which is emitted for example by a lateral emission from the LED on the silver mirror, compared to a non-corroded mirror can be reflected to a much lesser extent by a corroded silver mirror. Furthermore, the corrosion leads to a degradation of electrical contacts with a corroded silver level.

As an alternative to silver surfaces, gold surfaces can be used as corrosion-resistant solutions. in the

However, compared to silver surfaces, gold surfaces have the disadvantage of about 30 to 40% lower reflectivity, based on the reflectivity of silver, in the visible

Field of light on.

An object of at least some embodiments is to provide a support for an optoelectronic device with a mirror layer with silver, in which the corrosion can be reduced. Another object of at least some embodiments is to provide a method for

Specify a carrier. Another one

The object of at least some embodiments is to provide an optoelectronic device with a carrier for an optoelectronic component.

These objects are achieved by articles and a method according to the independent claims. advantageous

Embodiments and further developments of the objects and of the method are characterized in the dependent claims and furthermore emerge from the following description and the drawings. In accordance with at least one embodiment, a support for an optoelectronic component has at least one

Mirror layer containing silver. Furthermore, the carrier element has a functional material which is in direct contact with the silver. Furthermore, the functional material can cause a reduction in the corrosion of the mirror layer.

The fact that the functional material is in direct contact with the silver of the mirror layer can, here and below, mean in particular that the functional material can be directly on the mirror layer or also in or within the mirror layer

Mirror layer is arranged or present. It has been shown to be beneficial for the

Mirror layer desired properties such as a good adhesion to electrical connections, such as bonding contacts or contact surfaces of optoelectronic devices, and / or protection against corrosion can achieve that the functional material is in direct contact with at least a portion of the silver of the mirror layer. The functional materials listed below may advantageously be chemical and electrolytic

Degradation processes of silver in the mirror layer prevent or at least inhibit what is a fundamental

A prerequisite for a stable performance and longevity of an optoelectronic device is, for example, with regard to a stable light output when using a radiation-emitting optoelectronic component.

According to at least one further embodiment, an optoelectronic device has an aforementioned carrier as well as an optoelectronic component, the carrier having a Carrier element having a silver-containing mirror layer and a functional material in direct contact with at least a portion of the silver, the support member has a leadframe and / or a housing

and the optoelectronic component on the

Lead frame and / or is arranged in the housing.

For example, the optoelectronic device can have a so-called package with the optoelectronic component, wherein the optoelectronic component is mounted in the optoelectronic device and electrically connected. The optoelectronic component can thus be electrically contactable from the outside in the optoelectronic device and thereby in the

optoelectronic device operated. Of the

Electrical connection can be made in particular by the

Leadframe done, which can be embedded on or in the housing and at least one mounting surface for mounting and / or an electrical contact surface for electrical contacting of the optoelectronic device. The housing can completely enclose the optoelectronic component or, for example, also have an opening in which the optoelectronic component is arranged.

The carrier element can be characterized in particular by the fact that the optoelectronic component can be mechanically and / or electrically connected or mounted on the carrier element. This can be done between the optoelectronic

Component and the carrier element, a connection layer, for example, a solder layer or an adhesive layer may be arranged. For electrical contact

in particular a solder layer or an adhesive layer with or made of an electrically conductive adhesive. is merely a mechanical connection may be required instead of electrically conductive materials for the

Connection layer, for example, an electrical

insulating adhesive can be used. The

Connecting layer can also continue to thermal

Connection of the optoelectronic component to the

Carrier be suitable.

Furthermore, the support element may additionally or alternatively also have a reflective surface underneath and / or adjacent to and / or around the optoelectronic component, reflect the electromagnetic radiation generated by the optoelectronic component away from the support or radiate electromagnetic radiation radiated from outside onto the support and the support element Optoelectronic device can reflect. In a particularly preferred embodiment, the carrier element has a mounting surface for the

optoelectronic component on which the

optoelectronic component can be mounted, for example, by soldering or gluing. Alternatively or additionally, the carrier element can also be a contact surface for a

Provide bonding wire, such as a bonding contact. The optoelectronic component can be, for example, a radiation-emitting or a radiation-receiving optical-electronic component. In particular, the optoelectronic component can be embodied as a semiconductor layer sequence or as a semiconductor chip with a semiconductor layer sequence, for example as a light-emitting diode (LED) or as a photodiode.

The following description applies equally to the carrier as well as to the optoelectronic device with the carrier. The functional material contains in a preferred

Embodiment platinum or is made of platinum. Alternatively or additionally, the functional material may include at least one or more materials selected from indium (In), zinc (Zn), tin (Sn), copper (Cu), molybdenum (Mo), palladium (Pd), rhodium (Rh) , Ruthenium (Ru) and a transparent conductive oxide, or consist of one or more of the aforementioned materials. Transparent conductive oxides ("TCO" for short) are transparent, conductive materials, usually metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO) in addition to binary metal oxygen compounds, such as

For example, ZnO, SnO 2 or In 2 O 3 also include ternary metal oxygen compounds such as Zn 2 SnO 4, Cd SnO 3, Zn SnO 3, Mgln 204, GalnO 3, Zn 2 In 2 O 5 or In 4 Sn 3 O 12, or mixtures of different transparent conductive oxides into the group of TCOs. The transparent conductive oxide may in a particularly preferred embodiment contain or be ITO.

It has been found that the functional material, when it is in direct contact with the silver of the mirror layer, the material property of the mirror layer in

favorable way can influence. In particular, it has been found that effective corrosion protection for the silver-containing mirror layer can be achieved by the functional material.

The mirror layer may, for example, have a thickness of greater than or equal to 10 nm and less than or equal to 1000 nm, preferably greater than or equal to 50 nm and less than or equal to 500 nm and more preferably greater than or equal to 100 nm and less than or equal to 300 nm. As a particularly advantageous for applications with optoelectronic devices, a thickness of about 200 nm for the mirror layer has been found.

According to an advantageous embodiment of the carrier, the functional material may form a functional layer adjacent to the mirror layer. In particular, the

functional layer between the carrier element and the

Mirror layer can be arranged. In other words, the functional layer and thus the functional material can be arranged under the mirror layer as seen from the carrier element and furthermore to the carrier element and the

Each mirror layer directly adjacent. For example, it is advantageously possible to achieve an improvement in the adhesion of the mirror layer and in particular of the silver contained in the mirror layer to the carrier element. In particular, the functional layer may have a thickness of greater than or equal to 1 nm and less than or equal to 500 nm. A thickness of greater than or equal to 5 nm and less than or equal to 100 nm have proven particularly advantageous.

Alternatively, the functional material may be a

form functional layer, which is arranged above the mirror layer seen from the support element, so that the mirror layer between the support element and the

functional layer is arranged. It can the

Mirror layer directly adjacent to the carrier element and the functional layer. In this embodiment, it has proved to be advantageous if the functional

Layer has a thickness of greater than or equal to 0.1 nm and less than or equal to 10 nm. Alternatively to an arrangement of exactly one mirror layer and / or exactly one functional layer on the

Carrier element may be arranged alternately on the support element and a plurality of mirror layers and / or a plurality of functional layers on the support member to each other. For example, this may mean that exactly one mirror layer is between two functional ones

Layers or even a functional layer between two mirror layers is arranged. Furthermore, this may mean that the plurality of mirror layers and the

A plurality of functional layers comprising a layer stack having at least two mirror layers and at least two functional layers, which are arranged alternately one above the other on the carrier element, wherein the

Layer stack can start either with a mirror layer or with a functional layer on the support element. The respective individual layers of the majority of

Mirror layers and / or the plurality of functional layers may have thicknesses as mentioned above. Alternatively, for example, the mirror layers of the plurality of mirror layers and / or the functional layers of the plurality of functional layers

taken together have a total thickness which corresponds to one of the aforementioned thicknesses. Here, each of the

For example, single layers may be less than 1 nm to a few nm thick.

Furthermore, the functional material in the

Mirror layer be included. This may mean, on the one hand, that the functional material may be present in a functional layer adjacent to the mirror layer and at the same time in the mirror layer. Alternatively, the functional material may be present only in the mirror layer be without a functional layer is disposed on the support element.

If at least one functional layer is arranged directly adjacent to the mirror layer on the carrier element, the functional material can be introduced, for example by diffusion, into the mirror layer. It can do that

functional material in the mirror layer with a

Concentration gradients be present by a

Concentration of functional material in the

Mirror layer is formed, starting from the

functional layer decreases towards a side facing away from the functional layer side of the mirror layer. The functional material can be part of the

Mirror layer or be included in the entire mirror layer. It may be advantageous if the functional material is distributed in the mirror layer in such a way that it is contained in a predominant part, that is to say in particular in more than half of the mirror layer. Particularly preferably, the functional material is distributed throughout the mirror layer, so that the functional material also on one of the functional layer

opposite interface of the mirror layer is detectable.

Is the functional material in the mirror layer

included, so it may be in a particularly preferred

Embodiment with the silver of the mirror layer a

Forming alloy. In particularly preferred embodiments, the silver of the mirror layer forms alloys with platinum and / or with molybdenum and / or with palladium and copper and / or with indium and / or with tin and / or with indium and tin. According to at least one further embodiment, in a method for producing a carrier according to one of the aforementioned embodiments for an optoelectronic component, a carrier element is provided on which a mirror layer with silver and a functional material are applied, wherein at least the functional material is applied by sputtering or evaporation , Such a method may be advantageous over conventional methods, for example for the production of known lead frames, since the functional material may be difficult or impossible to apply by means of galvanic coating customary for the production of lead frames.

In order to produce a mirror layer, in addition to

Silver also contains the functional material that can be used with

Advantage also the mirror layer and in particular the silver by evaporation or sputtering be produced.

After the mirror layer and the functional material have been applied, an annealing step may be particularly preferred

be performed. In this case, the carrier and in particular the carrier element can be exposed to a temperature of greater than or equal to 100 ° C and less than or equal to 500 ° C. In such an annealing step, the diffusion of the functional material within the mirror layer or also starting from a functional layer on the mirror layer into the mirror layer can be effected. The annealing step can also be carried out, for example, within a process flow for

Preparation of the carrier or the optoelectronic

Device can be performed in the form of a thermal process step and thus lead to the desired functionality of the functional material and the mirror layer. The abovementioned embodiments and features can advantageously bring about corrosion protection for the mirror layer with silver in that, in addition to silver, the

Mirror layer on the support element the functional

Material is applied and deposited. By the

the aforementioned arrangements and layer structures of

Mirror layer and the functional material on the

Carrier element and the aforementioned Materialauswahlen and material compositions and the method described, a good reflection and bondability of the mirror layer and a reliability of the optoelectronic device can be effected. The carrier and the optoelectronic

Device can thereby, for example, with advantage in an automotive, industrial and / or

Be used in lighting applications in which a high reliability of optoelectronic devices or devices is required.

Further advantages and advantageous embodiments and

Further developments of the invention will become apparent from the im

The following embodiments described in conjunction with FIGS. 1 to 5.

Show it:

1 shows a schematic representation of a carrier according to an embodiment,

Figures 2 to 4 are schematic representations of carriers according to further embodiments and

5 shows an optoelectronic device with a carrier according to another embodiment. In the exemplary embodiments and figures, the same or equivalent components may each have the same

Be provided with reference numerals. The illustrated elements and their proportions with each other are basically not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better representation and / or better understanding exaggerated be shown thick or large.

FIG. 1 shows an exemplary embodiment of a carrier 101 for an optoelectronic component 5, which can be arranged on the carrier 101, as by means of FIG

dashed line is indicated schematically. The

optoelectronic component 5 forms but no

Component of the carrier 101.

The carrier 101 has a carrier element 1 with a

Area 10 on, which serves as a mounting surface for the

Optoelectronic component 5 can serve or the

additionally or alternatively can be arranged as a reflection region around the optoelectronic device around. In the illustrated embodiment, it is the

Surface area 10 around both a mounting area and a reflection area.

The support element 1 is executed in the embodiment shown as part of a lead frame ("leadframe"), both for mounting and for the electrical connection of

optoelectronic components is used. The carrier element 1 is made of copper, for example of a

Copper strip, which may additionally be coated with nickel to the electrical and mechanical Improve connection properties. Such

Nickel coating is usually applied by means of electroplating on the copper strip. On the surface area 10 of the support element 1 is a

Mirror layer 2 arranged, which has silver.

In particular, the mirror layer 2 shown in FIG. 1 is a silver mirror layer. Directly adjacent to the mirror layer 2, a functional material 3 is disposed thereon. In the exemplary embodiment shown, the functional material forms a functional layer 4 which is arranged on the mirror layer so that the functional material 3 is in direct contact with at least part of the silver of the mirror layer 2.

In particular, the functional material 3 in the embodiment shown platinum and may particularly preferably be made of platinum. It has been found that platinum, which is in direct contact with a silver mirror layer, can significantly reduce the corrosion of the silver.

The thickness of the mirror layer 2 is shown in FIG

Embodiment about 200 nm. Alternatively, the mirror layer depending on the requirements of the carrier 101, so also depending on the configuration of the on the carrier 101st

to be mounted optoelectronic component 5, as described in the general part described thicker or thinner. In order to influence and reduce the reflection properties of the mirror layer 2 as little as possible, the

functional layer 4 has a thickness of greater than or equal to 0.1 nm and less than or equal to 10 nm. A thickness of about 0.1 nm may also correspond, for example, to a functional layer 4, which essentially has only one

Atomic layer of the functional material 3 has. Alternatively to the embodiment shown with platinum as a functional material 3, the carrier 101 on the

Carrier element 1 and the mirror layer 2 also a

alternative or further material of the functional materials mentioned in the general part. In particular, the materials indium, zinc, molybdenum, palladium, rhodium and ruthenium may be advantageous. The functional layer 4 can also be several different functional

Materials 3, for example in an alloy or in a stack of layers with several individual layers,

exhibit.

Furthermore, it is also possible for the functional material 3 to have a transparent, conductive oxide (TCO), for example indium tin oxide (ITO).

The functional material 3 can also in the

Mirror layer 2 may be present, which, for example, by a diffusion of the functional material 3 of the

functional layer can be achieved in the mirror layer. For this purpose, after the application of the mirror layer 2 and the functional material 3 about what is in the case of the functional material 3, in particular in the case of platinum, preferably by sputtering or evaporation, a

Annealing step are performed, in which the carrier 101 is exposed to a temperature of greater than or equal to 100 ° C and less than or equal to 500 ° C. This can be a

Diffusion of the functional material 3 can be achieved in the mirror layer 2, wherein a concentration gradient arise can, by a concentration of the functional

Material 3 is formed in the mirror layer 2, which, starting from the functional layer 4 in the direction of the functional layer 4 side facing away from the mirror layer 2, ie the carrier element 1, decreases. Especially

It is advantageous if the functional material 3 in the largest part of the mirror layer 2, that is in more than

Half of the mirror layer 2, is present and in particular up to the adjacent to the carrier element 1 side of

Mirror layer 2 diffused. This allows the functional material 3 also within the mirror layer 2 to a

Reduction of silver corrosion lead. In addition, for example, the adhesion of the mirror layer 2 on the carrier element 1 can be increased in an advantageous manner.

FIG. 2 shows a further exemplary embodiment of a carrier 102, which differs from the preceding one

Embodiment differs in that the

functional material 3 is applied in the form of a functional layer 4 between the mirror layer 2 and the carrier element 1 on the surface region 10 of the carrier element 1. The thickness of the functional layer 4, which preferably comprises platinum, but also additionally or alternatively one or more of the other materials mentioned, is greater than or equal to 1 nm and less than or equal to 500 nm and particularly preferably greater than or equal to 5 nm and less than or equal to one another 100 nm.

The functional layer 4 can on the one hand increase the adhesion of the mirror layer 2 on the carrier element 1 and

at the same time lead to a reduction or even avoidance of corrosion of the silver in the mirror layer 2. As in the previous embodiment can also in the case of Carrier 102 in the present embodiment a

Annealing after the application of the mirror layer and the functional material are performed, by which a diffusion of the functional material 3 in the mirror layer 2 can be achieved.

FIG. 3 shows a further exemplary embodiment of a carrier 103 which, in comparison to the preceding exemplary embodiments, has replaced the one with a single mirror layer 2 and a single functional layer 4

functional material 3, a plurality of mirror layers

2, 2 'and a plurality of functional layers 3, 3' each having a functional material 4, 4 '. The two mirror layers 2, 2 'and two functional layers 4, 4' are shown purely by way of example, so that on the carrier element 1, for example, only one

Mirror layer 2 between two functional layers 4, 4 'or two mirror layers 2, 2' may be arranged with an intermediate functional layer 4. Furthermore, the layer stack can also be more than two

Mirror layers 2, 2 'and / or more than two functional layers 4, 4' have.

The functional materials 3, 3 'can be the same or different and have one or more of the abovementioned materials described in the general part.

By the arrangement of the mirror layer 2 between two functional layers 4, 4 ', for example, a diffusion of the functional materials 3, 3' from both sides in the mirror layer 2 into be made possible, thereby advantageously the corrosion-reducing or

corrosion-preventing effect of functional materials

3, 3 'can be increased. Because continue on the carrier element 1 more than one functional layer 4, 4 'is arranged, the functional layers 4, 4', for example, be made thinner than they in the

Embodiments to Figures 1 and 2 are. This may be a possibly anti-reflection effect of

functional layer or functional layers are reduced to the mirror layer or the mirror layers.

FIG. 4 shows a further exemplary embodiment of a carrier 104, which has a mirror layer 2 with silver on the carrier element 1 in comparison to the preceding exemplary embodiments of FIGS. 1 to 3, in which the functional material 3 is also included. In particular, the functional material may form an alloy with the silver of the mirror layer.

It may prove to be particularly advantageous if the functional material 3 is platinum containing at least 10% by weight, preferably less than or equal to 5% by weight, particularly preferably less than or equal to 2% by weight. or even less than or equal to 1% by weight in the mirror layer

2 is included.

Alternatively, the functional material 3 may also

Be molybdenum, with a share of greater than or equal to

0.1 wt .-% and less than or equal to 5 wt .-% and preferably in a proportion of about 1 wt .-% in the mirror layer 2 is included. Furthermore, the functional material can also have palladium and / or copper, wherein in particular simultaneously present palladium and copper in the mirror layer 2 with each in a proportion of greater than or equal to 0.1 wt .-% and less than or equal to 5 wt .-% may be advantageous.

Alternatively, the functional material 3 may also contain indium and / or tin, each having a content of less than or equal to 10 wt .-%, preferably less than or equal to 5 wt .-% and particularly preferably 1 wt .-%. The functional material 3 can only contain or be indium, only tin or both.

The specified proportions of the functional material in the alloys always refer to the

Weight proportion of silver. In addition to the embodiments shown in FIGS. 1 to 4, it may also be possible for the mirror layer to contain a functional material that combines with silver

Alloy forms, and at the same time on or under the

Mirror layer 2 another functional material in the form of a functional layer or in the form of several

functional layers are arranged.

FIG. 5 shows an example of an embodiment

Optoelectronic device 1000, which has a carrier 105 and an optoelectronic component 5.

The carrier 105 may, for example, according to one of

Embodiments of the preceding figures 1 to 4 be executed. In particular, the carrier 105 a

Carrier element 1, which has a lead frame in the form of lead frame parts 12, 13 and a housing 11. The housing 11 is formed from a plastic which partially surrounds the lead frame 12, 13, and in which an opening 15 is formed, in which the optoelectronic component 5 is arranged on the ladder frame part 12. Furthermore, the lead frame part 12 may include a heat sink 14, as by the dashed line

Area indicated by the housing 11 to a

Bottom of the support member 1 can reach, and whereby an effective heat dissipation of the operation of the

Optoelectronic component 5 resulting heat loss can be achieved.

The carrier element 1 has a surface area 10 on the ladder frame part 12, a surface area 10 'on the

Lead frame part 13 and a surface portion 10 '' on the inner wall of the opening 15 of the housing 11, on which one or more mirror layers 2 and one or more functional materials 3 can be arranged. Purely by way of example are in the illustrated embodiment, the

Mirror layer 2 and the functional material 3 on the surface areas 10 and 10 'of the lead frame parts 12 and 13 are arranged. The mirror layer 2 and the functional

Material 3 can according to one of the preceding

Be executed embodiments.

The optoelectronic component 5 is shown in FIG

Embodiment, a light-emitting diode (LED) based on a semiconductor layer sequence or a

Semiconductor chip of a semiconductor layer sequence, the electromagnetic radiation during operation, in particular in a

ultraviolet to infrared wavelength range and

particularly preferably radiates in a visible wavelength range. The semiconductor layer sequence may for example be based on an arsenide, phosphide and / or nitride compound semiconductor material system. Such LEDs and modifications thereof are known to those skilled in the art and will not be further elaborated here.

The optoelectronic component 5 is on the

Ladder frame part 12 is mounted and electrically connected from its underside via the ladder frame part 12. For this purpose, a connecting layer is arranged between the optoelectronic component 5 and the lead frame part 12 or the carrier element 1 (not shown), which in

embodiment shown also as electrical

Used connecting material and a solder or an electrically conductive adhesive has or is made of it. If only one mechanical connection is necessary, the connection layer can, for example, also have or be an electrically conductive adhesive.

About a bonding wire 6, the front of the

Optoelectronic device electrically connected to the lead frame part 13. Alternatively, the

Optoelectronic component 5 also has a structured back contact and a solder contact with the

Conductor frame part 13 to be electrically connected. The lead frame parts 12 and 13 protrude out of the housing 11, so that the optoelectronic component can be electrically contacted from outside. The optoelectronic device

1000 is designed as a surface-mountable so-called SMT package.

The mirror layer 2 with the silver proves to be

particularly advantageous due to the excellent

Reflection properties of silver in the visible

Wavelength range and good bondability and

Conductivity of silver. Through the functional material 3 In this case, the mirror layer 2 and in particular the silver of the mirror layer 2 can be reduced or even prevented from corrosion, for example by sulfur gases and / or moisture, so that no further measures,

for example, for encapsulation of the mirror layer. 2

necessary to the environment. Thus, the

Optoelectronic device 1000, for example, in the opening 15 of the housing 11 have a potting, which in terms of its optical properties of the

optoelectronic component 5 is adapted and does not have to be tight against corrosive components of the environment.

The illustrated optoelectronic device can be characterized by the prevention or at least reduction of chemical and electrolytic degradation processes in the mirror layer 2 by stable light output and longevity. The carriers and the optoelectronic device of

shown embodiments may have alternative or additional features as described in the general part. The invention is not by the description based on the

Embodiments limited to these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly incorporated in the claims

Claims or embodiments is given.

Claims

claims

Anspruch [en] A carrier for an optoelectronic component (5) which has on a carrier element (1) at least one mirror layer (2) and a functional material (3), wherein the

Mirror layer (2) contains silver, the functional material (3) is in direct contact with the silver, so that the functional material (3) causes a reduction in the corrosion of the mirror layer (2).

2. A carrier according to claim 1, wherein the functional material (3) contains platinum.

A support according to claim 1 or 2, wherein the functional material (3) comprises at least one material selected from indium,

Zinc, tin, copper, molybdenum, palladium, rhodium, ruthenium and a transparent conductive oxide.

A support according to any preceding claim, wherein the functional material (3) forms a functional layer (4) adjacent to the mirror layer (2) disposed between the support member (1) and the mirror layer (2).

5. A carrier according to claim 4, wherein the functional layer (4) has a thickness of greater than or equal to 1 nm and less than or equal to 500 nm, in particular of greater than or equal to 5 nm and less than or equal to 100 nm.

6. A carrier according to one of the preceding claims, wherein the functional material (3) forms a functional layer (4) adjacent to the mirror layer (2), and the

Mirror layer (2) between the support element (1) and the functional layer (4) is arranged.

A support according to claim 6, wherein the functional layer (4) has a thickness of greater than or equal to 0.1 nm and less than or equal to 10 nm.

8. Carrier according to one of claims 4 to 7, wherein a plurality of mirror layers (2, 2 ') and / or a plurality of functional layers (4, 4') on the carrier element (1) are arranged alternately to each other.

9. Support according to one of the preceding claims, wherein the functional material (3) in the mirror layer (2) is included.

10. A carrier according to any one of the preceding claims, wherein the functional material (3) with the silver in the

Mirror layer (2) forms an alloy.

11. carrier according to the preceding claim, wherein the

functional material (3) in the alloy in each case based on a weight proportion of silver

Platinum with a content of less than or equal to 10% by weight, preferably less than or equal to 5% by weight,

Molybdenum in an amount greater than or equal to 0.1% by weight and less than or equal to 5% by weight,

- Palladium and copper, each with a content of greater than or equal to 0.1 wt .-% and less than or equal to 5 wt .-% or

- Indium and / or tin, each with a content of less than or equal to 10 wt .-%

contains.

12. An optoelectronic device with a carrier (105) according to any one of claims 1 to 11 and a Optoelectronic component (5), wherein the carrier (105) has a carrier element (1) with a mirror layer (2) and a functional material (3), wherein the carrier element (1) has a lead frame (12, 13) and / or a housing (11) and wherein the optoelectronic component (5) on the lead frame (12) and / or in the housing (11) is arranged.

13. A method for producing a carrier according to one of claims 1 to 11 for an optoelectronic component (5), in which a carrier element (1) is provided and a mirror layer (2) with silver and a functional material (3) on the carrier element ( 1) are applied, wherein at least the functional material (3) is applied by sputtering or evaporation.

14. The method of claim 13, wherein after the application of the mirror layer (2) and the functional material (3) an annealing step is performed.

15. The method according to claim 13 or 14, wherein the

Annealing step at a temperature of greater than or equal to 100 ° C and less than or equal to 500 ° C is performed.